JP2020088302A - Method for manufacturing light-emitting device - Google Patents

Abstract

To provide a method for manufacturing a light-emitting device in which a resist film is formed in a desired location and reduction in adhesiveness between a lead frame (lead part) and a resin portion is suppressed.SOLUTION: The method for manufacturing a light-emitting device includes a step of preparing a first structure described below. The first structure has: a lead frame comprising a metal plate that has a plurality of pairs of metal parts, an upper surface, a lower surface and end faces where the pair of metal parts oppose to each other, and a first plating layer comprising gold or a gold alloy formed in a region other than a first region including the upper surface of the metal part by using a resist film as a mask that is formed by an electrodeposition method in the first region including the end face of the metal part, in which the resist film is removed; and a resin molded body integrally molded with the lead frame so as to cover the first region and expose a part of the lower surface of the lead frame. The first structure has a plurality of recesses on the upper surface side, in which the first plating layer present on the upper surface of the metal part is located at the bottom face of the recess. The method for manufacturing the light-emitting device further includes: a step of forming a second structure by disposing a light-emitting element on the bottom face in the recess and disposing an encapsulation member to cover the light-emitting element; and a step of dividing the second structure into individual pieces to obtain a plurality of light-emitting devices.SELECTED DRAWING: Figure 2G

Description

The present disclosure relates to a method for manufacturing a light emitting device.

Patent Document 1 discloses a manufacturing method for obtaining a light emitting device by performing gold plating on the entire outermost surface of a lead frame and then forming a reflection resin portion on the lead frame.
Patent Document 2 discloses a manufacturing method for obtaining a light emitting device by coating a photosensitive resist on the front and back surfaces of a metal substrate and partially forming a plated member.

JP, 2017-076809, A JP, 2011-129687, A

However, in the method for manufacturing the light-emitting device of Patent Document 1, the adhesion between the lead frame and the reflection resin portion is low due to the low adhesion between the gold and the reflection resin portion, which have high resistance to oxidation and the like. Could be.
Further, in the method for manufacturing a light emitting device of Patent Document 2, it is difficult to reliably apply the photosensitive resist to the corners or side surfaces of the metal substrate, and for example, the photosensitive resist may not be formed near the corners of the metal substrate. There is a nature.

Therefore, it is an object of one embodiment of the present invention to provide a method for manufacturing a light-emitting device in which a resist film is formed at a desired portion to prevent a decrease in adhesion between a lead frame (lead portion) and a resin portion. To do.

A method for manufacturing a light-emitting device according to an embodiment of the present invention includes a metal plate having a plurality of pairs of metal parts, an upper surface, a lower surface, and a metal plate having end faces facing each other, and a first region including end faces of the metal parts. And a first plating layer containing gold or a gold alloy formed in a region other than the first region including on the upper surface of the metal part using the resist film formed by the electrodeposition method as a mask, and the resist film is removed. And a resin molded body that covers the first region and exposes a part of the lower surface of the lead frame and is integrally molded with the lead frame, and has a plurality of recesses on the upper surface side. A step of preparing a first structure in which the first plating layer on the upper surface of the metal portion is located on the bottom surface of the recess, and a sealing member for disposing the light emitting element on the bottom surface and covering the light emitting element in the recess. The method includes the steps of arranging and forming the second structure, and dividing the second structure into pieces to obtain a plurality of light emitting devices.

According to one embodiment of the present invention, it is possible to provide a method for manufacturing a light-emitting device in which a resist film is formed at a desired portion and a decrease in adhesion between a lead frame (lead portion) and a resin portion is suppressed.

It is a typical top view when the metal plate concerning one embodiment is seen from the upper surface side. It is the elements on larger scale which expanded the broken line part in FIG. 1A. FIG. 1C is a schematic end view taken along line 1C-1C in FIG. 1B. FIG. 6 is a schematic end view showing the metal portion after the resist film is formed on the first region. FIG. 3 is a schematic end view showing a metal part having a resist film formed on its surface. It is a typical end view which shows an example of an exposure process. It is a typical end view which shows an example of an exposure process. FIG. 6 is a schematic end view showing a step of forming a first plating layer. FIG. 6 is a schematic end view showing a step of removing a resist film. It is a typical end view showing an example of a lead portion. It is a typical end view of the 1st structure concerning one embodiment. It is the elements on larger scale which expanded the broken line part in FIG. 3A. It is a typical end view of the 2nd structure concerning one embodiment. It is a typical end view showing an example of arrangement of the 1st plating layer. FIG. 3 is a schematic end view of a light emitting device according to one embodiment. FIG. 3 is a schematic perspective view of a light emitting device according to one embodiment. It is the elements on larger scale which expanded the broken line part in FIG. 5B. It is a schematic top view when a pair of leads is seen from above. It is a schematic top view which shows an example of arrangement|positioning of a 1st plating layer. It is a schematic top view which shows an example of arrangement|positioning of a 1st plating layer. It is a schematic top view which shows an example of arrangement|positioning of a 1st plating layer. It is a schematic top view which shows an example of arrangement|positioning of a 1st plating layer. It is a figure which shows the evaluation result and measurement result of Examples 1-7, the comparative example 1, and the comparative example 2.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The following embodiments are examples, and the method for manufacturing the light emitting device according to the present disclosure is not limited to the following embodiments. For example, the numerical values, shapes, materials, etc. shown in the following embodiments are merely examples, and various modifications are possible as long as there is no technical contradiction.

The dimensions, shapes, etc. of the components shown in the drawings may be exaggerated for the sake of clarity, and do not reflect the dimensions, shapes, and size relationships between the components in actual lead frames, light-emitting devices, etc. There are cases. Further, in order to avoid making the drawings excessively complicated, some of the elements may not be shown.

In the following description, components having substantially the same function are designated by common reference numerals, and description thereof may be omitted. In the following description, a term indicating a specific direction or position (for example, “upper”, “lower” and another term including those terms) may be used. However, those terms are only used for the sake of clarity in terms of relative orientation or position in the referenced figures. In the drawings other than the present disclosure, the actual product, the manufacturing apparatus, etc., the same as the referenced drawings, as long as the relative directions or positions in terms of “upper”, “lower”, etc. in the referenced drawings are the same. It does not have to be arranged.

In the present specification, the terms such as the metal portion and the lead portion may be the same as those used before and after being divided into individual pieces.

The method for manufacturing the light emitting device 100 according to the embodiment of the present disclosure includes a step of preparing the first structure body 50, a step of forming the second structure body 60, and the second structure body 60 being separated into a plurality of light emitting elements. Obtaining the device 100. The step of preparing the first structure 50 includes (A) the step of preparing the metal plate 30, and (B) the lead frame 40 in which the first plating layer 5 containing gold or a gold alloy is formed in a desired region. And the step of forming the resin molded body 8 on the lead frame 40 (C).
Each step will be described in detail with reference to FIGS. 1A to 5D.

[(A) Step of Preparing Metal Plate 30]
First, a metal plate 30 including a plurality of pairs of metal portions 35 and having an upper surface 30a, a lower surface 30b, and an end surface 35c facing the pair of metal portions 35 is prepared. The metal plate 30 may be prepared by purchasing a metal plate 30 manufactured in advance, and is prepared by performing etching or pressing on a flat plate material made of copper, a copper alloy, or a nickel alloy. You may. 1A is a schematic top view when the metal plate 30 is viewed from the top side, and FIG. 1B is a partially enlarged view (showing two pairs of metal portions 35) in which a broken line portion in FIG. 1A is enlarged. 1C is a schematic end view taken along the line 1C-1C in FIG. 1B. In the present specification, the end surface 35c refers to a surface between the pair of metal portions 35, which is between the upper surface 35a and the lower surface 35b.

The metal portion 35 shown in FIG. 1C has a first corner portion C1 connecting the upper surface 35a and the end surface 35c of the metal portion 35, and a second corner portion C2 connecting the lower surface 35b of the metal portion 35 and the end surface 35c. .. In the present specification, the corner portion may have a curved surface in a part of the corner. In one metal portion 35 of the pair of metal portions 35, the first corner portion C1 is closer to the other metal portion 35 than the second corner portion C2. Further, the end surface 35c of the metal portion 35 has a convex portion P located closer to the other metal portion 35 than the first corner portion C1 and the second corner portion C2. Since the end surface 35c includes the convex portion P, the surface area of the end surface 35c can be easily increased as compared with the case where the end surface 35c is perpendicular to the upper surface 35a, and the adhesion strength with the resin molded body 8 described later. Can be improved.

Further, as shown in FIG. 1B, the metal portion 35 may have the groove 13 or the through hole on the upper surface 35a. Accordingly, by inserting the resin molded body 8 into the groove 13 or the through hole, the pair of metal portions 35 (portions to be the pair of lead portions 36) and the resin molded body 8 can be firmly fixed. The step of forming the groove 13 and the through hole may be performed in the same step as the step of forming the pair of metal portions 35, or may be performed in another step.

[(B) Step of forming lead frame 40]
Next, the resist film 7 is formed in the first region X including the end surface 35c of the metal portion 35 by the electrodeposition method. FIG. 2A is a schematic end view taken along line 2A-2A in FIG. 1B, and shows the metal portion 35 after the resist film 7 is formed in the first region X. In FIG. 2A, the resist film 7 continuously covers a region located above the end surface 35c and a part of the upper surface 35a continuous with the region. Further, it covers a region located on the upper side of the end surface 35d located on the opposite side of the end surface 35c and a part of the upper surface 35a. The resist film 7 may cover a part of the end surface 35c or the entire surface of the end surface 35c. In addition to the end surface 35c of the metal part 35, the resist film 7 connects the first corner C1 connecting the upper surface 35a and the end surface 35c of the metal part 35, and the lower surface 35b connecting the end surface 35c of the metal part 35. It is preferable to continuously coat at least one of the two corners C2. As a result, after the resist film 7 is removed, the first plating layer 5 containing gold or a gold alloy is not formed in the region, so that the adhesion strength with the resin molded body 8 described later can be improved.

The step of forming the resist film 7 in the first region X of the metal part 35 includes, for example, the following steps.

[(B-1) Step of forming resist film 7 by electrodeposition method]
First, the metal plate 30 is dipped in an aqueous solution containing a substance that becomes charged particles (for example, acrylic) and a substance that becomes the resist film 7, and electricity is applied. This immersion step is performed, for example, under conditions of a voltage of 100 V to 250 V and an immersion time of 10 seconds to 30 seconds, and preferably at a voltage of 150 V to 200 V and an immersion time of 10 seconds to 20 seconds. As a result, as shown in FIG. 2B, the resist film 7 is formed on the upper surface 35a, the lower surface 35b, the end surface 35c, and the surface including the corners of the metal portion 35. In FIG. 2B, the hatching of the resist film 7 is omitted for clarity. A photosensitive photoresist material is preferably used as the substance forming the resist film 7. By using a photoresist material as the resist film 7, it is possible to precisely process the resist film 7 by irradiating a desired area with light and removing an unnecessary portion with a developing solution.

[(B-2) Drying Step of Resist Film 7]
Next, after taking out the metal plate 30 from the aqueous solution, a drying step of applying heat to the resist film 7 is performed. The metal plate 30 on which the resist film 7 is formed is heated at 60° C. to 100° C. for 45 seconds to 90 seconds, preferably at 60° C. to 80° C. for 60 seconds to 90 seconds. As a result, the resist film 7 having a small thickness variation can be formed on the surface of the metal plate 30. Further, by performing the drying step, the component that becomes the resist film 7 effectively adheres to the vicinity of the corner of the metal portion 35, and the resist film 7 easily covers the corner of the metal portion 35.

With the conventional method of forming the resist film 7 by coating, it is difficult for the resist film 7 to reliably cover the corners and/or end faces of the metal part 35. However, in the method for manufacturing a light emitting device of the present disclosure, the resist film 7 is formed by the electrodeposition method, so that the resist film 7 can be easily formed in a desired region of the metal portion 35 including the corner portion and the end surface 35c. You can

In the conventional coating method, the thickness of the resist film 7 formed at the corners of the metal portion 35 tends to be smaller than the thickness of the resist film formed on the upper surface 35a and the lower surface 35b of the metal portion 35. There is. However, in the method for manufacturing the light emitting device of the present disclosure, the thickness of the resist film 7 formed at the corners of the metal part 35 and the upper surface 35 a and the lower surface of the metal part 35 are formed by forming the resist film 7 by the electrodeposition method. The variation with the thickness of the resist film formed on 35b can be reduced. As a result, it is possible to prevent the first plating layer containing gold or a gold alloy from being unintentionally formed at the corner of the metal portion 35. The difference between the thickness h1 of the resist film formed on the upper surface 35a of the metal portion 35 and the thickness h2 of the resist film 7 formed at the first corner C1 or the second corner C2 of the metal portion 35 is, for example, 0 μm to It is 30 μm, and preferably 0 μm to 5 μm. This can reduce the possibility that the resist film 7 will not be sufficiently cured in the exposure step described later. In addition, in the step of removing or peeling the resist film 7 described later, the removal or peeling can be easily performed. The thickness h2 of the resist film 7 formed at the first corner C1 or the second corner C2 of the metal part 35 is determined by the angle between the first corner C1 or the second corner C2 of the metal part 35 and the resist film 7. Refers to the distance to the section RC.

The resist film 7 formed on the surface of the metal plate 30 has a thickness of, for example, 20 μm or less, and preferably 10 μm or less. By setting the thickness of the resist film 7 to 20 μm or less, variations in the film thickness of the resist film 7 can be effectively suppressed. Further, by setting the thickness of the resist film 7 to 20 μm or less, removal or peeling can be easily performed in the step of removing or peeling the resist film 7. The thickness of the resist film 7 may be larger than 20 μm.

[(B-3) Step of removing the resist film 7 other than the first region X]
Next, the resist film 7 other than the resist film 7 formed in the first region X is removed. This step includes, for example, an exposure step of irradiating a desired region on the surface of the metal portion 35 with light and a step of removing an unnecessary portion with a developing solution (developing step).

When a negative photoresist material is used as the resist film 7, the resist film 7 located in the first region X is exposed to light from above, below, or above and below the metal plate 30 to expose the resist film located in the first region X. An exposure step is performed to make the film 7 insoluble in the developer. Next, the metal plate 30 is immersed in a developing solution or the developing solution is sprayed onto the surface of the metal plate 30 by spraying or the like. As a result, of the resist film 7 located on the surface of the metal portion 35, the resist film 7 located in the second region Y other than the first region X is removed by the developing solution. In addition, in order to improve the adhesion between the resist film 7 and the metal portion 35, heat treatment may be performed after the developing process. Through these steps, as shown in FIG. 2A, it is possible to form the metal plate 30 on which the resist film 7 is formed only in the first region X on the surface of the metal portion 35.

When a positive photoresist material is used as the resist film 7, light is applied to the resist film 7 located in the second region Y other than the first region X from above, below, or above and below the metal plate 30, An exposure step is performed to make the resist film 7 located in the second region Y soluble in the developing solution. Next, the metal plate 30 is immersed in a developing solution or the developing solution is sprayed onto the surface of the metal plate 30. As a result, of the resist film 7 located on the surface of the metal portion 35, the resist film 7 located in the second region Y is removed by the developing solution. In addition, in order to improve the adhesion between the resist film 7 and the metal portion 35, heat treatment may be performed after the developing process. Through these steps, as shown in FIG. 2A, it is possible to form the metal plate 30 on which the resist film 7 is formed only in the first region X on the surface of the metal portion 35.

The exposure step can be performed, for example, by disposing a light-shielding mask and applying light. FIG. 2C shows an exposure process when a negative photoresist material is used and a light shielding mask MS is used. FIG. 2C is a schematic end view in a direction perpendicular to the upper surface of the metal portion 35. In FIG. 2C, the first corner C1 is outside the second corner C2. The light-shielding mask can be reused by washing. The exposure step can be performed by using an irradiation device that irradiates a predetermined patterning light. As the irradiation device, for example, a maskless exposure device, a direct imaging device or a direct drawing exposure device can be used.

In the step (B-3) of removing the resist film 7 including the exposure step, it is preferable to remove the resist film 7 located on the entire lower surface of the metal portion 35. Thereby, in the step (B-4) of forming the first plating layer 5 described later, the first plating layer 5 can be formed on the entire lower surface of the metal portion 35. As a result, the first plating layer 5 in which oxidation or sulfidation does not easily occur is arranged on the lower surface of the light emitting device 100 after being separated into individual pieces. As a result, for example, when the light emitting device 100 is mounted on a mounting substrate via a joining member such as solder, it is possible to prevent the joining strength between the light emitting device 100 and the joining member from decreasing with time. ..

As a method of removing the resist film 7 located on the entire lower surface of the metal part 35, for example, the exposure step shown in FIG. 2C is performed. Specifically, when the resist film 7 is irradiated with light from below the metal plate 30, the light shielding mask MS is arranged so as to cover the lower surface of the metal portion 35, and the end portion E of the light shielding mask MS is placed on the metal portion. The exposure is performed by arranging it between the first corner C1 and the second corner C2 of 35. Thereby, it is possible to prevent the lower surface 35b of the metal portion 35 and a part of the end surface 35c continuous with the lower surface 35b from being exposed to light, and to prevent the resist film located in that area from becoming insoluble in the developing solution. You can As a result, the lower surface 35b of the metal portion 35 and the resist film 7 located on a part of the end surface 35c continuous with the lower surface 35b are easily removed by the developing solution. The same can be applied to the end surface 35d of the metal portion 35 located on the opposite side of the end surface 35c. Further, in the exposure step, when using an irradiation device that irradiates a predetermined patterning light, the end portion of the patterning light is positioned between the first corner C1 and the second corner C2 of the metal portion 35, and the end thereof is positioned. Exposure is performed so as to irradiate the outside (the first corner C1 side) from the part

Further, when a positive photoresist material is used, as shown in FIG. 2D, the lower surface 35b of the metal portion 35 and a part of the end surface 35c continuous with the lower surface 35b are exposed to light so that the light shielding mask MS is formed. The end E or the end of the patterning light of the irradiation device is positioned between the first corner C1 and the second corner C2 of the metal part 35. As a result, the resist film 7 located on the lower surface 35b of the metal portion 35 and a part of the end surface 35c continuous with the lower surface 35b becomes soluble in the developing solution. As a result, the resist film 7 located in that region is easily removed by the developing solution.

The resist film 7 may not be removed on the lower surface 35b of the metal portion 35, or only a part of the resist film 7 may be removed. When only a part of the resist film 7 is removed, for example, the resist film 7 located in the central region including the geometric center of the lower surface 35b can be removed and the resist film 7 located at the edge of the lower surface 35b can be left. It is also possible to remove the resist film 7 located at the edge of the lower surface 35b and leave the resist film 7 located in the central region including the geometric center of the lower surface 35b. As a result, the surface of the metal part 35 is located on the lower surface of the metal part 35, or the second plating layer 6 described later is located, which reduces the cost as compared with the case where the first plating layer 5 is located. can do.

[(B-4) Step of forming first plating layer 5]
Next, the first plating layer 5 containing gold or a gold alloy is formed on the metal plate 30 having the resist film 7 formed in the first region X by a plating method. The first plating layer 5 is a partial plating layer. As the plating method, an electrolytic plating method or an electroless plating method can be used. As shown in FIG. 2E, the first plating layer 5 is formed on at least the upper surface 35 a of the metal portion 35. In this case, the upper surface or formed on the upper surface includes both a case of being directly formed on the upper surface and a case of being indirectly formed above through another plating layer. In other words, the first plating layer 5 may be in direct contact with the upper surface 35a of the metal portion 35, or may be located above the metal portion 35 and not in direct contact with the upper surface 35a of the metal portion 35. When the second plating layer 6 is located between the first plating layer 5 and the upper surface 35 a of the metal part 35, the first plating layer 5 is located above the metal part 35 with the second plating layer 6 interposed therebetween.

The first plating layer 5 shown in FIG. 2E is formed on the upper surface 35a side, the lower surface 35b side, the end surface 35c side, and the end surface 35d side opposite to the end surface 35c of the metal portion 35. By forming the first plating layer 5 containing gold or a gold alloy on the surface of the metal portion 35, it is possible to prevent the surface of the metal portion 35 on which the first plating layer 5 is formed from being oxidized or sulfided. .. The thickness of the first plating layer 5 is, for example, 10 nm or more, preferably 20 nm or more, and more preferably 25 nm or more. Thereby, for example, the step of mounting the light emitting element 10 on the first plating layer 5 and the step of connecting one end of the wire can be easily performed.

The gold or gold alloy content of the first plating layer 5 is, for example, 85 mass% or more, preferably 90 mass% or more. Thereby, for example, the step of mounting the light emitting element 10 on the first plating layer 5 and the step of connecting one end of the wire can be easily performed. When the first plating layer 5 is a gold alloy, the gold alloy can be a gold-silver alloy, a gold indium alloy, a gold palladium alloy, a gold cobalt alloy, a gold nickel alloy, or a gold copper alloy.

[(B-5) Step of removing resist film 7 located in first region X]
Next, the resist film 7 located in the first region X is removed with a stripping solution. When the first plating layer 5 is formed on the surface of the resist film 7, the resist film 7 and the first plating layer 5 formed on the surface of the resist film 7 can be simultaneously removed. Through the above steps, as shown in FIG. 2F, a lead portion including a first region X where the first plating layer 5 is not formed and a second region Y where the first plating layer 5 is formed. A lead frame 40 having 36 can be formed. In the following description, the metal plate 30 including the first plating layer 5 will be described as the lead frame 40, and the metal portion 35 including the first plating layer 5 will be described as the lead portion 36.

[(B-6) Step of forming second plating layer 6]
The step of forming the lead frame 40 preferably includes the step of forming the second plating layer 6 on the surface of the metal portion 35 before the step (B-4) of forming the first plating layer 5. The second plating layer 6 can be formed by an electrolytic plating method or an electroless plating method. The second plating layer 6 can cover the first region X, or can cover both the first region X and the second region Y. By locating the second plating layer 6 on the surface of the metal portion 35, it is possible to prevent the surface of the metal plate 30 made of a copper alloy or the like from being exposed to the outside and oxidizing the surface. Further, it is possible to reduce the possibility that a component such as copper of the metal plate 30 will be deposited on the surface of the first plating layer 5, which is the outermost layer. As a result, for example, when connecting the electrode of the light emitting element 10 and the first plating layer 5 with a wire or the like (including a wire or a bonding member), the connection strength between the first plating layer 5 and the wire or the like decreases. Can be suppressed. The second plating layer 6 may be formed on the entire surface of the metal portion 35, or may be formed on only a part of the surface of the metal portion 35. When the lead frame 40 has the first plating layer 5 and the second plating layer 6, the first plating layer 5 may be the outermost layer and the second plating layer 6 may be the intermediate layer or the base layer.

The second plating layer 6 includes, for example, one or more metal layers including copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, rhodium, or rhodium alloy. The second plating layer 6 does not substantially contain gold or gold alloy. The term "substantially free of gold or gold alloy" means that gold or gold alloy is inevitably mixed, and the content of gold or gold alloy is, for example, 0.05% by mass or less. When the second plating layer 6 is a plurality of layers, the second plating layer 6 includes, for example, a metal layer containing nickel or a nickel alloy and a metal containing palladium, a palladium alloy, rhodium or a rhodium alloy in order from the metal part 35 side. And a layer. A metal layer formed by sputtering, a conductive paste, vapor deposition, or the like can be used instead of the second plating layer 6 formed by the plating method. The materials mentioned for the second plating layer 6 can be used for the metal layer.

The step (B-6) of forming the second plating layer 6 is, for example, after the step (A) of preparing the metal plate 30 and before the step (B) of forming the lead frame 40, or the first step. It can be performed after the step (B-3) of removing the resist film 7 other than the region X and before the step (B-4) of forming the first plating layer 5. When the second plating layer 6 is a plurality of layers, the timing of the step of forming each layer may be all performed between one of the above two steps, or may be performed separately between the two steps. May be. For example, when the second plating layer 6 includes a metal layer containing nickel or the like and a metal layer containing palladium or the like, a metal layer containing nickel or the like and a metal containing palladium or the like are provided between step (A) and step (B). A layer may be formed, a metal layer containing nickel or the like and a metal layer containing palladium or the like may be formed between the step (B-3) and the step (B-4), and the step (A) A metal layer containing nickel or the like may be formed between the step (B) and the step (B), and a metal layer containing palladium or the like may be formed between the step (B-3) and the step (B-4).

FIG. 2G shows an example of the lead portion 36 including the first plating layer 5 and the second plating layer 6. The second plating layer 6 shown in FIG. 2G includes a lower metal layer 6a and an upper metal layer 6b. The lower metal layer 6a of the second plating layer 6 is formed, for example, between step (A) and step (B), and covers both the first region X and the second region Y. Further, the upper metal layer 6b is formed, for example, between the step (B-3) and the step (B-4), and covers the second region Y. Since the lower metal layer 6a covers both the first region X and the second region Y of the metal portion 35, the surface of the metal portion 35 can be prevented from being exposed to the outside, and the surface is oxidized or the like. Can be suppressed. Further, by covering the second region Y of the metal portion 35 with the upper metal layer 6b, it is possible to reduce the possibility that components such as copper of the metal portion 35 will be deposited on the surface of the first plating layer 5 that is the outermost layer. You can

The thickness of the first plating layer 5 may be the same on the upper surface 30a side and the lower surface 30b side of the metal plate 30, and the thickness of the upper surface 30a side of the metal plate 30 is thicker than the lower surface 30b side of the metal plate 30. Alternatively, the thickness of the metal plate 30 on the upper surface 30a side may be thinner than the thickness of the metal plate 30 on the lower surface 30b side. For example, in the electroplating method, by disposing a shielding plate having different sizes between the anode and the cathode so that the cathode current density distributions on the upper surface 30a side and the lower surface 30b side of the metal plate 30 are different. The first plating layer 5 having different thicknesses on the upper surface 30a side and the lower surface 30b side can be easily and simultaneously formed. When the thickness of the first plating layer 5 located on the upper surface 30a side of the metal plate 30 is thicker than the thickness of the first plating layer 5 located on the lower surface 30b side, the flatness of the first plating layer 5 located on the upper surface 30a side Since the degree is improved, the light emitted from the light emitting element 10 can be efficiently reflected to the upper side. When the thickness of the first plating layer 5 located on the upper surface 30a side of the metal plate 30 is smaller than the thickness of the first plating layer 5 located on the lower surface 30b side, the light emitting device 100 is mounted on the mounting substrate via the joining member. When mounted on, the bonding strength between the light emitting device 100 and the bonding member can be improved.

The second plating layer 6 may have the same thickness on the upper surface 30a side and the lower surface 30b side of the metal plate 30, and the thickness on the upper surface 30a side of the metal plate 30 is larger than the thickness on the lower surface 30b side of the metal plate 30. The thickness of the metal plate 30 on the upper surface 30a side may be smaller than the thickness of the metal plate 30 on the lower surface 30b side. For example, in the electroplating method, the second plating layer 6 having different thicknesses on the upper surface 30a side and the lower surface 30b side can be easily and simultaneously formed by making the current density different between the upper surface 30a side and the lower surface 30b side of the metal plate 30. Can be formed. When the thickness of the second plating layer 6 located on the upper surface 30a side of the metal plate 30 is thicker than the thickness of the second plating layer 6 located on the lower surface 30b side, the first plating layer 5 and the first plating layer 5 located on the upper surface 30a side Since the flatness of the 2 plating layer 6 is improved, the light emitted from the light emitting element 10 can be efficiently reflected to the upper side. .. When the thickness of the second plating layer 6 located on the upper surface 30a side of the metal plate 30 is smaller than the thickness of the second plating layer 6 located on the lower surface 30b side, the light emitting device 100 is mounted on a mounting substrate via a joining member. In doing so, the bonding strength between the light emitting device 100 and the bonding member can be improved. When the second plating layer 6 is a plurality of layers, the thickness of the second plating layer 6 may be the thickness of each layer or the total thickness of the plurality of layers.

[(C) Step of forming resin molded body 8]
Next, the resin molded body 8 is integrally molded with the lead frame 40. Through this step, the first structure 50 (lead frame with resin molded body) including the lead frame 40 and the resin molded body 8 and having the plurality of recesses 2 on the upper surface side can be prepared. FIG. 3A is a schematic end view of the first structure 50 when the lead frame 40 having the lead portion 36 described in FIG. 2G is used. Further, FIG. 3B is a partially enlarged view in which a broken line portion in FIG. 3A is enlarged. The first structure 50 includes a plurality of package regions 1, and the recesses 2 are formed in each package region 1. The first structure 50 is arranged, for example, in the resin molding die with the lead frame 40 being supported in a cavity of the resin molding die with the pair of lead portions 36 being in predetermined positions. Then, the resin material to be the resin molded body 8 is injected into the cavity to be solidified. As described above, it is possible to prepare the first structure 50 including the resin molded body 8 integrally formed with the resin portion 8a of each package region 1. The resin molded body 8 can be formed by, for example, a transfer molding method or an injection molding method.

On the bottom surface of the recessed portion 2, the top surfaces of the pair of lead portions 36 are located, and the first plating layer 5 on the top surface of the metal portion 35 is located. Since the first plating layer 5 is a metal layer that is unlikely to oxidize or sulfide, it is possible to prevent the surface of the metal portion 35 on which the first plating layer 5 is formed from being oxidized or sulfided. Further, for example, when one end of a wire or the like connected to the electrode of the light emitting element 10 is connected to the first plating layer 5, the first plating layer 5 is unlikely to oxidize or sulfurize, so the first plating layer 5 and the wire It is possible to suppress a decrease in connection strength with the like. Further, by using a material containing gold or a gold alloy for the wire or the like, the connection strength between the first plating layer 5 and the wire or the like can be further improved.

The resin molded body 8 covers the first region X of the lead portion 36. In the lead portion 36 shown in FIG. 3B, since the lower metal layer 6a is located in the first region X, the resin molded body 8 is in contact with the lower metal layer 6a located in the first region X. Since the first plating layer 5 is not formed in the first region X, the adhesion strength between the resin molded body 8 and the pair of lead portions 36 located in the first region X becomes good. As a result, it is possible to effectively suppress a decrease in adhesion strength between the resin molded body 8 and the pair of lead portions 36. As a result, for example, the sealing member 9 arranged in the recess 2 described later passes from the upper surface side of the lead portion 36 toward the lower surface side through the interface between the end surface 35c of the lead portion 36 and the resin molded body 8. The possibility of leakage can be reduced. Further, when the light emitting device 100 after being divided into individual pieces is mounted on the mounting substrate via a joining member such as solder, the joining member such as solder passes through the interface between the end surface 35 c of the lead portion 36 and the resin molded body 8. Therefore, it is possible to reduce the possibility of entering the recess 2.

The resin molded body 8 exposes a part of the lower surface of the lead frame 40. Thereby, in the light emitting device 100 after being divided into pieces, the heat generated from the light emitting element 10 arranged on the bottom surface of the recess 2 can be efficiently radiated from the lower surface side. On the other hand, since the lower surface of the lead frame 40 is exposed from the resin molded body 8, in the light emitting device 100 after being divided into individual pieces, the sealing member 9 arranged in the recess 2 leaks to the lower surface side, solder or the like. There is a possibility that the joining member of 2 will get into the recess 2. However, in the method for manufacturing a light-emitting device of the present disclosure, the first region X in which the first plating layer 5 is not formed is provided, and the first region X is covered with the resin molded body 8, whereby the resin molded body 8 and the pair of leads are formed. The adhesion strength with the portion 36 is improved. As a result, it is possible to reduce the possibility that the sealing member 9 may leak to the lower surface side of the light emitting device 100 after being separated into individual pieces. Further, in FIG. 3A, on the lower surface of the first structure 50, the lower surface of the lead frame 40 and the lower surface of the resin molded body 8 are formed on substantially the same surface. The height difference between the lower surface of the lead frame 40 and the lower surface of the resin molded body 8 in the height direction is, for example, ±10 μm or less.

In addition, preparing the 1st structure 50 includes both the case of manufacturing and preparing the 1st structure 50, and the case of purchasing and preparing the 1st structure 50 manufactured beforehand.

[(D) Step of Forming Second Structure 60]
Next, the light emitting element 10 is disposed on the bottom surface of the recess 2 of the first structure 50. As shown in FIG. 4A, the light emitting element 10 has, for example, positive and negative electrodes (not shown) on one surface, and is arranged on the upper surfaces of the pair of lead portions 36 exposed on the bottom surface of the recess 2. The positive and negative electrodes of the light emitting element 10 and the pair of lead portions 36 are connected by the wire 4. Note that the light emitting element 10 has positive and negative electrodes on one surface, the positive and negative electrodes are opposed to the upper surfaces of the pair of lead portions 36, and the upper surfaces of the pair of lead portions 36 are connected via a conductive bonding member. It can also be placed on top.

The first plating layer 5 preferably covers at least the placement region D where the wire 4 or the bonding member is placed on the upper surface of the lead portion 36. Since the first plating layer 5 is a metal layer that does not easily oxidize or sulfurize, the connection strength or the bonding strength of the wire 4 or the bonding member is improved. Further, as shown in FIG. 4B, the first plating layer 5 may cover only the arrangement region D in which the wire 4 or the bonding member is arranged on the upper surface of the lead portion 36. Thereby, the volume of the first plating layer 5 used is reduced, so that the connection strength or the bonding strength of the wire 4 or the bonding member can be improved while suppressing the cost of the light emitting device 100. In addition, the arrangement|positioning area|region D in the case of using the wire 4 is a 80-400 times area|region with respect to the cross-sectional area (cross-sectional area with respect to a wire diameter) of the wire 4, 150-200 times area|region. preferable. Further, the arrangement region D in the case of using the joining member is, for example, a region that is 10 to 50 times, and preferably 20 to 25 times the plane area of the joining member.

Next, the sealing member 9 is arranged in the recess 2 so as to cover the light emitting element 10. The sealing member 9 can contain a phosphor and/or a light diffusing material. The sealing member 9 can be arranged, for example, by discharging a mixed material in which a resin material as a base material contains a phosphor and/or a light diffusing material into the recess 2 by a dispenser or the like. After that, the sealing member 9 can be formed by going through a curing step. The sedimentation step may be performed after the mixed material is placed in the recess 2 and before the curing step. By performing the sedimentation step, the phosphors and the like can be unevenly distributed on the bottom surface side of the recesses 2, so that the color unevenness of the light emitting device 100 after individualization can be effectively reduced.

[(E) Step of obtaining a plurality of light emitting devices 100]
Finally, the second structure 60 is divided into individual pieces to obtain a plurality of light emitting devices 100. As a method for individualizing, for example, a lead-cut mold, a dicing saw, or laser light can be used for individualizing. Thereby, the light emitting device 100 shown in FIGS. 5A, 5B and 5C can be obtained. 5A is a schematic end view of the light emitting device 100 according to one embodiment, FIG. 5B is a schematic perspective view of the light emitting device 100 according to one embodiment, and FIG. 5C shows a broken line portion in FIG. 5B. FIG. Further, FIG. 5D is a schematic top view when only the pair of lead portions 36 are viewed from above, and the region where the first plating layer 5 is formed is hatched.

As shown in FIG. 5A, in the light emitting device 100, the lead portion 36 and the resin portion 8a are preferably flush with each other on the outer surface. Since the lead portion 36 does not extend outside the resin portion 8a on the outer side surface of the light emitting device 100, it is possible to provide a small light emitting device 100 having a small occupied area. The lead portion 36 may extend outside the resin portion 8a on the outer surface of the light emitting device 100. Thereby, the heat generated by the light emitting element 10 can be efficiently radiated to the outside.

Further, as shown in FIGS. 5A and 5C, it is preferable that the first plating layer 5 is not located between the lead portion 36 and the resin portion 8a on the outer surface of the light emitting device 100. As a result, the adhesiveness between the resin portion 8a and the lead portion 36 is improved on the outer side surface of the light emitting device 100, and it is possible to effectively prevent water and the like from entering from the interface between the resin portion 8a and the lead portion 36 on the outer side surface. Can be suppressed. In FIG. 5C, on the outer surface of the light emitting device 100, the metal portion 35 and the lower metal layer 6a (for example, a metal layer containing nickel or nickel alloy) that covers the metal portion 35 are exposed from the resin portion 8a.

Further, as shown in FIG. 5A, the light emitting device 100 has a region where the first plating layer 5 is not formed on the end surface 36c of the lead portion 36 that faces the other lead portion 36. As a result, it is possible to reduce the possibility that the sealing member 9 arranged in the recess 2 passes through the interface between the end surface 36c of the lead portion 36 and the resin portion 8a and leaks to the lower surface side of the lead portion 36. In the light emitting device 100 shown in FIG. 5A, the first plating layer 5 is not formed on the upper surface side of the end surface 36c. As a result, the first plating layer 5 is not formed at the portion of the interface between the end surface 36c of the lead portion 36 and the resin portion 8a, which is in contact with the sealing member 9, so that the sealing member 9 leaks from the recess 2 to the outside. The possibility of getting out can be reduced. The region of the end surface 36c where the first plating layer 5 is not formed may be the entire surface or a part thereof.

In the light emitting device 100, as shown in FIG. 5A, it is preferable that the first plating layer 5 is not formed in the continuous region S including the end surface 36c of the lead portion 36 and the upper surface continuous with the end surface 36c. As a result, the upper surface side region of the continuous region S is in good contact with the sealing member 9, and the end surface side region of the continuous region S is in good contact with the resin portion 8a. As a result, it is possible to effectively reduce the possibility that the sealing member 9 leaks out from the recess 2. The continuous region S where the first plating layer 5 is not formed is located in all regions on the end face side of the lead portion 36 in the direction perpendicular to the direction from the one lead portion 36 to the other lead portion 36. Alternatively, as shown in FIG. 5D, it may be located only in a part of the end face side of the lead portion 36.

Hereinafter, each member used in the method for manufacturing the light emitting device 100 of the present invention will be described.

(Metal plate 30, pair of metal parts 35)
As a material of the metal plate 30 and the pair of metal parts 35, for example, copper, aluminum, silver, iron, nickel, or an alloy thereof can be used. The metal plate 30 and the pair of metal parts 35 do not substantially contain gold or a gold alloy. The term "substantially free of gold or gold alloy" means that gold or gold alloy is inevitably mixed, and the content of gold or gold alloy is, for example, 0.05% by mass or less. These may have a single layer or a laminated structure (for example, a clad material). In particular, as the material of the metal plate 30 and the pair of metal parts 35, inexpensive or highly heat-dissipating copper or copper alloy can be preferably used. The thickness and shape of the metal plate 30 can be variously selected according to the thickness and shape of the light emitting device 100. The metal plate 30 may have a flat plate shape, a partially bent shape, or a partially thick or partially thin shape.

The metal plate 30 includes a plurality of pairs of metal parts 35. The metal plate 30 may include other metal parts in addition to the pair of metal parts 35 in one package region 1. The other metal part may function as a heat dissipation member, or may function as an electrode similarly to the pair of metal parts 35.

(Resin molded body 8, resin portion 8a)
For the resin molded body 8 and the resin portion 8a, a thermosetting resin, a thermoplastic resin, or the like can be used as a resin material that is a base material. Specifically, epoxy resin composition, silicone resin composition, modified epoxy resin composition such as silicone modified epoxy resin, modified silicone resin composition such as epoxy modified silicone resin, modified silicone resin composition, unsaturated polyester resin, Saturated polyester resin, polyimide resin composition, modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, etc. A resin can be used. In particular, it is preferable to use an epoxy resin composition or a silicone resin composition having excellent heat resistance and light resistance as the resin material of the resin molded body 8 and the resin portion 8a.

It is preferable that the resin molded body 8 and the resin portion 8a contain a light-reflecting substance in the resin material as the base material. As the light-reflecting substance, it is preferable to use a member that hardly absorbs light from the light emitting element 10 and has a large difference in refractive index with respect to the resin material as the base material. Such a light-reflecting substance is, for example, titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride or the like.

Further, the resin molded body 8 and the resin portion 8a contain a filler having a low light reflectance with respect to the external light (in many cases, sunlight) of the light emitting device 100 in order to improve the contrast of the light emitting device 100. May be. In this case, the resin molded body 8 and the resin portion 8a are, for example, black or a color similar thereto. As the filler, carbon such as acetylene black, activated carbon or graphite, transition metal oxide such as iron oxide, manganese dioxide, cobalt oxide or molybdenum oxide, or a colored organic pigment can be used depending on the purpose.

(Light emitting element 10)
The light emitting element 10 functions as a light source of the light emitting device 100, and also serves as an excitation source for the phosphor. The light emitting element 10, light emitting diode or the like can be used an element, light emission can be a nitride semiconductor in the visible range _{(In x Al y Ga 1-} x-y N, 0 ≦ x, 0 ≦ y, x + y ≦ 1 ) Can be preferably used. The light emitting device 100 shown in FIG. 5A includes one light emitting element 10, but the light emitting device of the present embodiment is not limited to this. The light emitting device 100 only needs to include at least one light emitting element, and the number of light emitting elements can be changed according to the purpose or application.

When the light emitting device 100 includes a plurality of light emitting elements 10, the plurality of light emitting elements 10 are, for example, a plurality of blue light emitting elements that emit blue light, three light emitting elements that emit blue light, green light, and red light, respectively. Alternatively, it may include a combination of a light emitting element that emits blue light and a light emitting element that emits green light. When the light emitting device 100 is used as a light source of a liquid crystal display device or the like, a light emitting element that emits blue light or a combination of a light emitting element that emits blue light and a light emitting element that emits green light is used as a light emitting element. preferable. For the light emitting element that emits blue light and the light emitting element that emits green light, it is preferable to use a light emitting element having a half-value width of 40 nm or less, and it is more preferable to use a light emitting element having a half value width of 30 nm or less. Thereby, blue light or green light can easily have a sharp peak. As a result, for example, when the light emitting device 100 is used as a light source of a liquid crystal display device or the like, the liquid crystal display device can achieve high color reproducibility. The plurality of light emitting elements 10 are connected in series, in parallel, or in combination of series and parallel.

(Sealing member 9)
The light emitting device 100 includes a sealing member 9 that covers the light emitting element 10. The sealing member 9 protects the light emitting element and the like from external force, dust, water and the like. The sealing member 9 preferably transmits 60% or more of the light emitted from the light emitting element 10, and more preferably 90% or more. As the base material of the sealing member 9, the resin material used in the resin molded body 8 can be used. The sealing member 9 may be a single layer or a plurality of layers. In addition, a light diffusing material such as titanium oxide, silicon oxide, zirconium oxide, or aluminum oxide can be dispersed in the sealing member 9.

The sealing member 9 may include one or more kinds of phosphors that convert the wavelength of light from the light emitting element 10. The phosphor may be any phosphor that is excited by the light of the light emitting element 10, and may be, for example, (Ca,Sr,Ba) ₅ (PO ₄ ) ₃ (Cl,Br):Eu, (Sr,Ca,Ba) ₄ Al ₁₄ O ₂₅ :Eu, (Ca,Sr,Ba) ₈ MgSi ₄ O ₁₆ (F,Cl,Br) ₂ :Eu, (Y,Lu,Gd) ₃ (Al,Ga) ₅ O ₁₂ :Ce,( _{sr, Ca) AlSiN 3: Eu} , 3.5MgO · 0.5MgF 2 · GeO 2: Mn, (x-s) MgO · (s / 2) Sc 2 O 3 · yMgF 2 · uCaF 2 · (1-t ^{_{) GeO 2 · (t / 2}} ) M t 2 O 3: zMn, Ca 3 Sc 2 Si 3 O 12: Ce, CaSc 2 O 4: Ce, (La, Y) 3 Si 6 N 11: Ce, (Ca ,Sr,Ba) ₃ Si ₆ O ₉ N ₄ :Eu, (Ca,Sr,Ba) ₃ Si ₆ O ₁₂ N ₂ :Eu, (Ba,Sr,Ca)Si ₂ O ₂ N ₂ :Eu, (Ca , Sr,Ba) ₂ Si ₅ N ₈ :Eu, (Ca,Sr,Ba)S:Eu, (Ba,Sr,Ca)Ga ₂ S ₄ :Eu,K ₂ (Si,Ti,Ge)F ₆ : A phosphor of Mn, Si _6-z Al _z O _z N _8-z :Eu (0<z<4.2) can be used.

The content of the light diffusion material and/or the phosphor is preferably, for example, about 10 to 150% by weight based on the total weight of the sealing member 9.

(Wire 4, joining member)
The wire 4 and the joining member are members that connect the electrode of the light emitting element 10 and the lead portion 36. As the material of the wire 4, for example, a metal such as gold, copper, silver, platinum, aluminum, or palladium, or an alloy containing one or more of these can be used. Further, as a conductive joining member, a conductive paste such as silver, gold or palladium, a eutectic solder material such as gold-tin or tin-silver-copper, a brazing material such as a low melting point metal, silver or gold, etc. Bumps and the like containing the same can be used. As the insulating joining member, an epoxy resin composition, a silicone resin composition, a polyimide resin composition or a modified resin thereof, a hybrid resin or the like can be used. When using these resins, a metal layer having a high reflectance such as an aluminum film or a silver film or a dielectric reflection film is provided on the mounting surface of the light emitting element 10 in consideration of deterioration due to light or heat from the light emitting element 10. be able to.

The wire 4 and the joining member are preferably made of a material containing gold or a gold alloy. Thereby, when connecting the wire 4 and the like to the first plating layer 5, the connection strength between the wire 4 and the first plating layer 5 is improved. Further, the wires 4 and the like become soft, and the possibility that the wires and the like break due to stress from the sealing member 9 can be reduced.

(Modification)
In the step (B) of forming the lead frame 40, a step of forming a mask in the second region Y other than the first region X of the metal plate 30 instead of the steps (B-1) to (B-3). , A step of forming the resist film 7 on the metal plate 30 on which the mask is formed by an electrodeposition method, a step of drying the resist film 7, and a step of removing the mask are performed, and the resist is applied only to the first region X. The metal plate 30 on which the film 7 is formed can be formed. A conductive or insulating member can be used for the mask, and an insulating mask is preferably used. By using the insulating mask, the resist film 7 is not formed in the region where the mask is formed, and the step of removing the mask becomes easy. As the mask, for example, a metal mask or a rubber mask can be used.

Further, the arrangement of the first plating layer 5 formed on the upper surfaces of the pair of lead portions 36 can be variously changed. 6A to 6D are schematic top views of the pair of lead portions 36, and the regions where the first plating layers 5 are formed are hatched. Further, in FIG. 6B, a region where the light emitting element 10, the protection element 11 and the wire 4 are arranged is shown by a broken line. In FIG. 6A, the first plating layer 5 is formed on the entire upper surfaces of the pair of lead portions 36. As a result, it is possible to reduce the possibility that sulfuration, oxidation or the like will occur on the entire upper surfaces of the pair of lead portions 36. In FIG. 6B, the first plating layer 5 is formed only on the upper surface of the lead portion 36 in a region to which one end of the wire 4 extending from the light emitting element 10 or the protective element 11 is connected and in the vicinity of that region. Thereby, the connection strength of the wire 4 can be improved while reducing the volume of the first plating layer 5 used. In FIG. 6C, the first plating layer 5 is formed only on the region exposed on the bottom surface of the recess 2 on the upper surface of the lead portion 36. Accordingly, for example, when a sulfur component or the like enters from the opening of the recess 2, it is possible to effectively prevent the upper surfaces of the pair of lead portions 36 located on the bottom surface of the recess 2 from being sulfurized. As a modification of FIG. 6C, the first plating layer 5 may be formed in a region defined by the groove 13 and the end face 36c on the upper surface of the lead portion 36 as shown in FIG. 6D.

First, the lead frame 40 used in Examples 1 to 7 was prepared. A specific method of forming the lead frame 40 will be described below by taking the lead frame 40 of Example 1 as an example.

As the metal plate 30, a TAMAC194 material manufactured by Mitsubishi Shindoh was used.

First, the lower metal layer 6a was formed on the entire surface of the metal plate 30 (metal part 35). A nickel plating layer was used as the lower metal layer 6a.

The nickel plating layer is used as an electrolytic nickel sulfamate plating bath.
Nickel sulfamate=450g/L
Nickel chloride = 10g/L
Boric acid = 30 g/L
The bath was used to adjust the plating time, and the solution was formed by electrolytic plating at a liquid temperature of 55° C. and a cathode current density of 5 A/dm ² . A nickel electrode containing sulfur was used as the anode.

Next, the upper metal layer 6b was formed on the lower metal layer 6a so as to cover the entire surface of the metal plate 30. A palladium plating layer was used as the upper metal layer 6b.

The palladium plating layer is used as an electrolytic palladium plating bath.
Tetraammine palladium chloride 5g/L as palladium
Ammonium nitrate = 150 g/L
2-Pyridinesulfonic acid=3 g/L
pH 8.5 (adjusted with ammonia water)
The bath was used to adjust the plating time, and electrolytic plating was performed at a liquid temperature of 50° C. and a cathode current density of 0.5 A/dm ² . A platinum-coated titanium electrode was used as the anode.

Next, a resist film 7 was formed on the surface of the metal plate 30 using a negative electrodeposition resist solution at a liquid temperature of 38° C., a voltage of 200 V, and an immersion time of 15 seconds. In the drying step after forming the resist film 7, a blower constant temperature and temperature controller was used, and the temperature was 75° C. and the drying time was 60 seconds. The thickness of the resist film 7 after drying was set to 7 μm to 10 μm. If the resist film 7 located at the corners is damaged when forming the first plating layer 5, the electrodeposition conditions and the drying conditions may be adjusted so that the resist film 7 located at the corners becomes thicker. it can. It should be noted that the metal plate 30 may be one in which the surface to which the resist film 7 is attached is subjected to cleaning treatment such as degreasing before the resist film 7 is formed.

Next, using a photomask, the resist film 7 was exposed to light having a main wavelength of 365 nm at an integrated light amount of 300 mJ/cm ² and cured. In the lead frame 40 of Example 1, a predetermined area of the resist film 7 was exposed so that the first plating layer 5 was arranged in the area (hatched area) shown in FIG. 6B. Then, the resist film 7 which was not exposed was removed by spray development using a developing solution at a liquid temperature of 50° C. and a time of 70 seconds. The exposure can be appropriately selected according to the shape of the metal plate 30. For example, when the end surface of the metal plate 30 is not sufficiently exposed and the resist film 7 is uncured, it is possible to use a light source that diffuses light or locally add exposure at an angle. , The end surface of the metal plate 30 is surely irradiated with light to cure the resist film 7.

Next, the first plating layer 5 was formed in a region (second region Y) where the resist film 7 was removed on the surface of the upper metal layer 6b. Thereby, the first plating layer 5 partially covers the surface of the metal plate 30. A gold plating layer was used as the first plating layer 5.

The gold plating layer is used as an electrolytic gold plating bath.
Gold potassium cyanide 1g/L as gold
Potassium citrate = 100g/L
Dipotassium phosphate = 30 g/L
pH 4.0 (adjusted with citric acid or potassium hydroxide)
The bath was used to adjust the plating time, and the solution was formed by electrolytic plating at a liquid temperature of 45° C. and a cathode current density of 2 A/dm ² . A platinum-coated titanium electrode was used as the anode.

Next, the resist film 7 was removed with a stripping solution. Specifically, the resist film 7 was stripped by spraying a stripping solution onto the resist film 7 under the conditions of a liquid temperature of 60° C., a time of 60 seconds, and a spray pressure of 0.2 MPa. For the peeling of the resist film 7, the peeling conditions can be adjusted depending on the shape of the metal plate 30. For example, when the metal plate 30 has a large number of irregularities on the surface and the resist film 7 is easily caught at a corner or the like, the peeling condition can be set to have a high spray pressure.

Next, as shown in FIG. 7, the lead frame 40 used in Examples 2 to 7 was formed by changing the pattern shape of the mask according to the type of each plating layer and the shape of the resist film 7. Also in the lead frames 40 of Examples 2 to 7, the lower metal layer 6a and the upper metal layer 6b are formed so as to cover the entire surface of the metal plate 30, and the first plating layer 5 is partially formed on the surface of the metal plate 30. It was formed so as to cover.

In the lead frame 40 of Example 2, a nickel plating layer was used as the lower metal layer 6a, a palladium plating layer was used as the upper metal layer 6b, and a gold-silver alloy plating layer was used as the first plating layer 5. The first plating layer 5 was formed in the area shown in FIG. 6B. The lead frame 40 of Example 2 differs from the lead frame 40 of Example 1 in that the first plating layer 5 is a gold-silver alloy plating layer.

The gold-silver alloy plating layer of Example 2 was formed by adding 0.1 g/L of potassium potassium cyanide to the gold plating bath composition shown in Example 1.

In the lead frame 40 of Example 3, a nickel plating layer was used as the lower metal layer 6a, a palladium nickel alloy plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5. Further, the first plating layer 5 was formed in the area shown in FIG. 6C. The lead frame 40 of Example 3 is different from the lead frame 40 of Example 1 in that the upper metal layer 6b is a palladium nickel alloy plating layer.

The palladium-nickel alloy plating layer of Example 3 was formed by adding 0.5 g/L of nickel sulfate to the palladium plating bath composition shown in Example 1.

In the lead frame 40 of Example 4, a nickel plating layer was used as the lower metal layer 6a, a rhodium plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5. Further, the first plating layer 5 was formed in the area shown in FIG. 6C. The lead frame 40 of Example 4 is different from the lead frame 40 of Example 1 in that the upper metal layer 6b is a rhodium plated layer.

The rhodium plating layer of Example 4 was used as an electrolytic rhodium plating bath.
Rhodium Sulfate Rhodium 3g/L
Sulfuric acid = 25 g/L
Lead acetate 10 mg/L as lead
The bath was used to adjust the plating time, and electrolytic plating was performed at a liquid temperature of 50° C. and a cathode current density of 1 A/dm ² . A platinum-coated titanium electrode was used as the anode.

In the lead frame 40 of Example 5, a nickel plating layer was used as the lower metal layer 6a, a rhodium platinum alloy plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5. Further, the first plating layer 5 was formed in the area shown in FIG. 6C. The lead frame 40 of Example 5 is different from the lead frame 40 of Example 1 in that the upper metal layer 6b is a rhodium platinum alloy plating layer.

The rhodium platinum alloy plating layer of Example 5 was formed by adding 0.5 g/L of chloroplatinic acid to the rhodium plating bath composition shown in Example 4.

In the lead frame 40 of Example 6, a nickel-cobalt alloy plating layer was used as the lower metal layer 6a, a palladium plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5. The first plating layer 5 was formed in the area shown in FIG. 6D. The lead frame 40 of Example 6 differs from the lead frame 40 of Example 1 in that the lower metal layer 6a is a nickel-cobalt alloy plating layer.

The nickel-cobalt alloy plating layer of Example 6 was formed by adding 45 g/L of cobalt sulfamate to the nickel plating bath composition shown in Example 1.

In the lead frame 40 of Example 7, a nickel plating layer was used as the lower metal layer 6a, a palladium plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5. The first plating layer 5 was formed in the area shown in FIG. 6D. The lead frame 40 of Example 7 is different from the lead frame 40 of Example 1 in the region where the first plating layer 5 is formed.

The lead frame 40 used in Examples 1 to 7 was prepared by the above method. ..

Next, as the lead frame of Comparative Example 1, the type of each plating layer is the same as that of the lead frame 40 of Examples 1 and 7, and the first plating layer 5 is formed so as to cover the entire surface of the metal plate 30. Prepared lead frame. Specifically, the lower metal layer 6a, the upper metal layer 6b, and the first plating layer 5 were formed on the entire surface of the metal plate 30. A nickel plating layer was used as the lower metal layer 6a, a palladium plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5.

Further, as the lead frame of Comparative Example 2, the type of each plating layer was the same as that of the lead frame 40 of Examples 1 and 7, and the first plating layer 5 was formed using a dry film resist instead of the electrodeposition method. The formed lead frame was prepared. Specifically, after the lower metal layer 6a and the upper metal layer 6b are formed on the entire surface of the metal plate 30, a resist film 7 is formed using a dry film resist, and the resist film 7 is partially formed on the upper metal layer 6b. 1 Plating layer 5 was formed. A nickel plating layer was used as the lower metal layer 6a, a palladium plating layer was used as the upper metal layer 6b, and a gold plating layer was used as the first plating layer 5.

Next, a resin molded body 8 was formed on the lead frame 40 prepared in Examples 1 to 7, Comparative Example 1 and Comparative Example 2 to prepare an assembly (lead frame with resin). The assembly (lead frame with resin) has a plurality of recesses 2 on the upper surface side, and the first plating layer 5 is exposed on the bottom surface of each recess 2.

Next, the light emitting element 10 was arranged on the first plating layer 5 located on the bottom surface of the recess 2, and the sealing member 9 containing the phosphor was formed in the recess 2. After that, the light emitting devices of Examples 1 to 7 and Comparative Examples 1 and 2 were obtained by dividing into individual pieces.

(Evaluation and measurement)
Next, the light emitting devices of Examples 1 to 7, Comparative Example 1 and Comparative Example 2 were placed on a printed circuit board coated with lead-free solder (Sn-0.3Ag-0.7Cu), respectively, at a temperature of 260°C. Reflow was performed under the condition of 10 seconds. After that, the light emitting device was peeled off from the printed board, and the presence or absence of invasion of solder in the recess 2 was evaluated. In addition, the presence or absence of leakage of the sealing member 9 on the lower surface of the light emitting device was also evaluated. The evaluation result is shown in FIG.

As shown in FIG. 7, in the light emitting device 100 of each of Examples 1 to 7, no invasion of the solder into the recess 2 and no leakage of the sealing member 9 on the lower surface of the light emitting device 100 occurred. On the other hand, in the light emitting devices of Comparative Example 1 and Comparative Example 2, intrusion of solder in the recess 2 and leakage of the sealing member on the lower surface of the light emitting device occurred. In particular, comparing Example 1 and Example 7 under the same conditions for each plating layer and Comparative Example 1, in Comparative Example 1 in which the first plating layer 5 is located on the entire end surface of the metal part 35, solder In Example 1 and Example 7 in which the intrusion and the leakage of the sealing member 9 occur, while the first plating layer 5 is not located in the first region including the end surface of the metal portion 35, the solder intrusion and the sealing member 9 are formed. No leakage occurred. Further, in Examples 1 to 7 in which the resist film 7 was formed by the electrodeposition method, the resist film 7 having a desired thickness could be formed on the corners and the end faces of the metal portion 35. On the other hand, in the light emitting device of Comparative Example 2 using the dry film resist, the resist film could not be arranged in the desired shape and thickness at the corners and end faces of the metal part 35.

100 Light-Emitting Device 30 Metal Plate 40 Lead Frame 50 First Structure 60 Second Structure 1 Package Region 2 Recess 4 Wire 5 First Plating Layer 6 Second Plating Layer 6a Lower Metal Layer 6b Upper Metal Layer 7 Resist Film 8 Resin Molding Body 8a Resin part 9 Sealing member 10 Light emitting element 11 Protective element 13 Groove 30a Upper surface 30b Lower surface 35 Metal part 35a Upper surface 35b Lower surface 35c End surface 35d End surface 36 Lead part 36c End surface C1 First corner C2 Second corner D Arrangement area E Edge part MS mask P convex part RC corner part S continuous region X first region Y second region

Claims (15)

A metal plate having a plurality of pairs of metal parts, each having an upper surface, a lower surface, and an end surface facing the pair of metal parts, and a resist film formed by an electrodeposition method in a first region including the end surfaces of the metal parts as a mask. And a first plating layer containing gold or a gold alloy formed in a region other than the first region including on the upper surface of the metal portion, the lead frame having the resist film removed, and the first frame. A resin molded body that covers the region and exposes a part of the lower surface of the lead frame and is integrally molded with the lead frame, and has a plurality of recesses on the upper surface side, Preparing a first structure in which the first plating layer is located on the upper surface of the metal part;
Arranging a light emitting element on the bottom surface in the recess, and arranging a sealing member for covering the light emitting element to form a second structure;
And a step of obtaining a plurality of light emitting devices by dividing the second structure into pieces. The step of preparing the first structure includes
A step of preparing the metal plate,
The lead frame is formed by forming the resist film on the first region including the end surface of the metal part by an electrodeposition method, forming the first plating layer on the upper surface of the metal part, and removing the resist film. A step of forming
The method of manufacturing a light emitting device according to claim 1, further comprising the step of forming the resin molded body on the lead frame. In addition to the end face of the metal portion, the resist film has at least one of a first corner portion connecting the top surface and the end surface of the metal portion and a second corner portion connecting the bottom surface and the end surface of the metal portion. The method for manufacturing a light emitting device according to claim 1, wherein the light emitting device is continuously coated. The step of preparing the first structure includes
Arranging the resist film on the upper surface, the lower surface, the end surface and the surface including the corners of the metal portion;
A step of drying the resist film,
An exposure step of irradiating the resist film located in the first region with light to make the resist film located in the first region insoluble in a developing solution;
Removing the resist film located in the second region other than the first region of the resist film located on the surface of the metal part with a developing solution;
The method for manufacturing a light emitting device according to claim 1, further comprising: after the formation of the first plating layer, removing the resist film located in the first region with a stripping solution. The step of preparing the first structure includes
Arranging the resist film on the upper surface, the lower surface, the end surface and the surface including the corners of the metal portion;
A step of drying the resist film,
An exposure step of irradiating the resist film located in a second region other than the first region with light to make the resist film located in the second region soluble in a developing solution;
Removing the resist film located in the second region of the resist film located on the surface of the metal portion with a developing solution;
The method for manufacturing a light emitting device according to claim 1, further comprising: after the formation of the first plating layer, removing the resist film located in the first region with a stripping solution. .. The exposure step is a step of irradiating the resist film with light from above, below or above and below the metal plate, and a step of arranging a light-shielding mask to apply light, or irradiating a predetermined patterning light. The method for manufacturing a light-emitting device according to claim 4, further comprising the step of using an irradiation device. In a sectional view perpendicular to the upper surfaces of the pair of metal parts,
Of the pair of metal portions, the first corner portion that connects the upper surface and the end surface of the one metal portion is closer to the other metal portion than the second corner portion that connects the lower surface and the end surface of the one metal portion. In a close position,
In the exposure step, light is applied to the resist film from below the metal plate, and an end portion of the light shielding mask or an end portion of patterning light is applied to the first corner portion and the second corner portion of the one metal portion. The method for manufacturing a light emitting device according to claim 6, further comprising the step of positioning the light emitting device between the light emitting device and the portion. The method for manufacturing a light emitting device according to claim 1, wherein the first plating layer containing gold or a gold alloy has a thickness of 10 nm or more. The method for manufacturing a light emitting device according to claim 1, wherein the first plating layer covers the entire top surface of the metal portion on the bottom surface of the recess. The method for manufacturing a light emitting device according to claim 1, wherein the first plating layer covers only a part of an upper surface of the metal portion on a bottom surface of the recess. The light emitting element is connected to the pair of metal parts via a wire or a joining member,
The method for manufacturing a light emitting device according to claim 10, wherein the first plating layer covers only an arrangement region where the wire or the joining member is arranged on the upper surface of the metal portion. Further comprising a second plating layer between the upper surface of the metal part and the first plating layer,
The said 2nd plating layer covers the said 1st area|region, or covers both the said 1st area|region and the 2nd area|region other than the said 1st area|region, The any one of Claims 1-11. Manufacturing method of light emitting device. The method for manufacturing a light emitting device according to claim 12, wherein the second plating layer includes one or more metal layers including copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, rhodium or rhodium alloy. The method for manufacturing a light emitting device according to claim 1, wherein a content of gold or a gold alloy in the first plating layer is 85 mass% or more. 15. The light emitting device according to claim 1, wherein the gold alloy of the first plating layer is a gold-silver alloy, a gold indium alloy, a gold palladium alloy, a gold cobalt alloy, a gold nickel alloy or a gold copper alloy. Production method.

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