JP2020077857A - Module and manufacturing method thereof - Google Patents

Abstract

To suppress defects due to softening of the resin bonding layer.SOLUTION: A module manufacturing method according to the present invention includes a step of forming a plurality of resin bonding layers 12 on the lower surface of a resin insulating layer 10, a step of joining a plurality of components including at least one electronic component 20 to the lower surface of the resin insulating layer 10 through the plurality of resin bonding layers 12, and a step of joining the plurality of components to a first metal layer 34 provided on the upper surface of the insulating layer such that a space 25 is sandwiched between the resin insulating layer 10 and the insulating layer.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a module and a manufacturing method thereof, for example, a module on which an electronic component is mounted and a manufacturing method thereof.

  In a power module mounting a power semiconductor element, a module is known in which an electronic component is mounted on the lower surface of a resin insulating layer via a resin bonding layer, and a DBC or DBA substrate or the like is bonded to the lower surface of the electronic component (for example, Patent Document 1). 1, 2).

JP, 2005-70269, A JP, 2005-170855, A

  When the electronic component and the DBC or DBA substrate or the like are formed using a conductive bonding layer (for example, silver paste), the resin bonding layer may be softened due to heat during sintering. When the resin bonding layer is softened, for example, the resin insulating layer is deformed.

  The present invention has been made in view of the above problems, and an object thereof is to suppress problems due to softening of the resin bonding layer.

  The present invention provides a step of forming a plurality of resin bonding layers on the lower surface of a resin insulating layer, and a plurality of components including at least one electronic component on the lower surface of the resin insulating layer via the plurality of resin bonding layers. Manufacture of a module including a step of joining and a step of joining the plurality of components to a first metal layer provided on an upper surface of the insulating layer so as to sandwich a gap between the resin insulating layer and the insulating layer. Is the way.

  In the above configuration, in the step of joining the plurality of components to the first metal layer, a conductive joining layer is provided between the plurality of components and the first metal layer, and the resin insulating layer and the insulating layer are provided. Can be configured to include a step of pressing the conductive bonding layers toward each other to heat the conductive bonding layers.

  In the above structure, the step of heating the conductive bonding layer may include a step of heating the conductive bonding layer to a temperature higher than the softening temperature of the resin bonding layer.

  In the above structure, the insulating layer may be a ceramic layer.

  In the above configuration, after the step of joining the plurality of parts to the first metal layer, the step of filling the gap between the lower surface of the resin insulating layer and the upper surface of the insulating layer with resin is provided. You can

  In the above structure, a step of forming a second metal layer which penetrates the resin insulating layer and is electrically connected to at least one of the plurality of components can be formed on the upper surface of the resin insulating layer.

  According to the present invention, a resin insulating layer, a ceramics layer, a first metal layer provided on the upper surface of the ceramics layer, and a plurality of resin bonding layers partially provided on the lower surface of the resin insulating layer are used for bonding. And a plurality of components including at least one electronic component bonded to each other via the conductive bonding layer on the upper surface of the first metal layer.

  In the above structure, a second metal layer that is provided on the upper surface of the resin insulating layer, is thicker than the resin insulating layer, and penetrates through the resin insulating layer and is electrically connected to at least one of the plurality of components is configured. be able to.

  In the above configuration, the resin bonding layer can be configured to be thinner around the bonding region where the plurality of components are bonded, as the position approaches the periphery of the resin bonding layer.

  In the above configuration, the electronic component includes a terminal on an upper surface, the second metal layer is connected to the terminal through a first through hole penetrating the resin insulating layer, and a second penetrating penetrating the resin insulating layer. A component other than the electronic component, which is connected to a component other than the electronic component among the plurality of components through a hole, and the resin bonding layer that joins the electronic component and the resin insulating layer, and a component other than the electronic component. And a second resin bonding layer that is bonded to the resin insulating layer and is separated from the first resin bonding layer.

  In the above structure, the terminal includes a first terminal and a second terminal having an area smaller than that of the first terminal, and the second metal layer is connected to the second terminal through the first through hole. It is possible to adopt a configuration in which the component other than the electronic component is connected via the second through hole.

  According to the present invention, it is possible to suppress defects due to softening of the resin bonding layer.

1A to 1D are cross-sectional views (No. 1) showing the method for manufacturing the module according to the first embodiment. 2A to 2C are cross-sectional views (No. 2) showing the method for manufacturing the module according to the first embodiment. 3A to 3C are cross-sectional views (No. 3) showing the method of manufacturing the module according to the first embodiment. FIGS. 4A and 4B are cross-sectional views (No. 4) showing the method for manufacturing the module according to the first embodiment. FIG. 5 is a cross-sectional view of the module according to the first modification of the first embodiment. FIG. 6 is a cross-sectional view of the module according to the second modification of the first embodiment. FIG. 7 is a cross-sectional view showing the method of manufacturing the module according to Comparative Example 1. FIG. 8A and FIG. 8B are cross-sectional views showing a method for manufacturing the module according to Comparative Example 1. FIG. 9A is a cross-sectional view showing the method for forming the bonding layer in Example 1, and FIG. 9B is a view showing the thickness of the sprayed bonding layer. FIG. 10 is a plan view of a module according to Modification 3 of Example 1.

  Embodiments of the present invention will be described below with reference to the drawings.

  1A to 4B are cross-sectional views showing a method of manufacturing a module according to the first embodiment. As shown in FIG. 1A, the insulating layer 10 is prepared. The insulating layer 10 is a resin insulating layer such as a polyimide layer and has flexibility. The thickness of the insulating layer 10 is, for example, 7.5 μm to 125 μm.

  As shown in FIG. 1B, a mask layer 50 having an opening 52 is arranged on the lower surface of the insulating layer 10. The mask layer 50 is, for example, a metal mask. For example, the inner side surface of the opening 52 is inclined so that the insulating layer 10 side becomes larger, and forms an eaves (that is, a tee bar is provided). Although details will be described with reference to FIGS. 9A and 9B, since there is an eaves, it is possible to form a structure in which the thickness of the periphery of the bonding layer 12 decreases from the inner side to the outer side. A photoresist may be used instead of the metal mask.

  As shown in FIG. 1C, the bonding layer 12 is formed in the opening 52 on the lower surface of the insulating layer 10. The bonding layer 12 is formed by applying the droplet 56 using the spray nozzle 54, for example. The droplet 56 is a solution of resin dissolved in a solvent to a predetermined viscosity. The bonding layer 12 is a resin adhesive such as an epoxy resin. The thickness of the bonding layer 12 is, for example, 5 μm to 20 μm after curing, which is thinner than the insulating layer 10.

  As shown in FIG. 1D, the mask layer 50 is removed. The bonding layer 12 may be formed using an inkjet method. When the pattern of the bonding layer 12 is directly drawn by using the inkjet method or the like, the mask layer 50 may not be formed. Further, the bonding layer 12 may be formed by using a screen printing method. In the inkjet method or the screen printing method, the bonding layer 12 itself is softened immediately after coating or printing, so that the circumference of the bonding layer 12 is naturally thinned.

  As shown in FIG. 2A, the electronic component 20 and the conductive block 21 are brought into contact with the lower surface of the bonding layer 12. By heat treatment (cure), the bonding layer 12 is cured and the electronic component 20 and the conductive block 21 are bonded to the insulating layer 10. The heat treatment is performed at a temperature of 150 ° C. to 300 ° C., for example.

  The electronic component 20 is a power element, and is, for example, a transistor such as an IGBT (Insulated Gate Bipolar Transistor), a bipolar transistor or a FET (Field Effect Transistor), or a diode. A semiconductor such as Si, GaN, or SiC is used for the transistor or the diode. The electronic component 20 is, for example, a bare chip here, but may be a package in which a bare chip is mounted. Terminals 22 and 23 are provided on the upper surface and the lower surface of the electronic component 20, respectively. The terminals 22 and 23 are metal layers such as copper, gold or aluminum. When the electronic component 20 is a vertical SiC transistor, the terminal 22 is a source terminal and a gate terminal, and the terminal 23 is a drain terminal. The conductive block 21 is a spacer (shim) that electrically and / or mechanically connects the insulating layer 10 and a substrate 30 described later, and is a metal layer such as copper.

  As shown in FIG. 2B, a through hole 16 penetrating the insulating layer 10 and the bonding layer 12 is formed. The through hole 16 is formed by, for example, irradiating laser light. The area of the through hole 16 is 95% or less of the area of the terminal 22, and the size of the through hole 16 is, for example, 30 μm to 500 μm. The through hole 16 may be formed before mounting the electronic component 20 and the conductive block 21 on the insulating layer 10.

  As shown in FIG. 2C, the metal layer 14 is formed on the upper surface of the insulating layer 10 and the inner surface of the through hole 16. A method of forming the metal layer 14 will be described. A seed layer is formed on the upper surface of the insulating layer 10 and the inner surface of the through hole 16. The seed layer is formed by using, for example, a sputtering method. The seed layer is, for example, a metal layer such as a titanium layer and a copper layer from the insulating layer 10 side. A plating layer is formed on the upper surface of the seed layer. The plating layer is a metal layer such as a copper layer. The plating layer is formed by, for example, an electrolytic plating method by supplying a current to the seed layer. The metal layer 14 is formed by the seed layer and the plating layer. The thickness of the metal layer 14 is, for example, 30 μm to 300 μm, which is larger than the thickness of the insulating layer 10. The metal layer 14 may be thinner than the insulating layer 10.

  As shown in FIG. 3A, a substrate 30 having metal layers 34 and 36 on its upper and lower surfaces is prepared. The substrate 30 is, for example, a ceramic substrate. The metal layers 34 and 36 are, for example, copper layers or aluminum layers, and the substrate 30 is, for example, DBC (Direct Bonded Copper) or DBA (Direct Bonded Aluminum). The substrate 30 has a thickness of, for example, 200 μm to 3000 μm, and the metal layers 34 and 36 have a thickness of, for example, 10 μm to 1000 μm.

  As shown in FIG. 3B, the bonding layer 32 is applied on the upper surface of the metal layer 34. The bonding layer 32 is a conductive paste containing metal particles such as copper or silver. A nano paste having a particle size of less than 1 μm may be used. The application of the bonding layer 32 uses, for example, a printing method, an inkjet method, or a dispensing method.

  As shown in FIG. 3C, the lower surface of the electronic component 20 and the conductive block 21 of FIG. 2C is placed in contact with the upper surface of the bonding layer 32 of FIG. 3B. As shown in FIG. 4A, the bonding layer 32 is baked by heat treatment. As a result, the metal layer 34 is thermally, mechanically, and electrically bonded to the terminal 23 of the electronic component 20 and the conductive block 21. The insulating layer 10 and the substrate 30 are opposed to each other with the gap 25 in between. The thickness of the bonding layer 32 is, for example, 5 μm to 20 μm after firing. The heat treatment temperature is, for example, about 200 ° C to 350 ° C.

  As shown in FIG. 4B, the insulating layer 10 and the substrate 30 are resin-sealed with a resin 28. The resin 28 is a thermosetting resin or a thermoplastic resin such as an epoxy resin and a phenol resin. As described above, the module according to the first embodiment is completed.

[Modification 1 of Embodiment 1]
FIG. 5 is a cross-sectional view of the module according to the first modification of the first embodiment. As shown in FIG. 5, the resin 28 is provided so as to cover the insulating layer 10 and the metal layer 14. The other configuration is the same as that of the first embodiment, and the description is omitted. Since the planar shape of the insulating layer 10 is smaller than that of the substrate 30, the resin 28 can be formed to cover the insulating layer 10 by using a molding method, a potting method, or the like. The electrodes may be exposed by polishing the resin 28.

[Modification 2 of Embodiment 1]
FIG. 6 is a cross-sectional view of the module according to the second modification of the first embodiment. As shown in FIG. 6, electronic components 20a and 20b are mounted on the lower surface of the insulating layer 10. The electronic component 20a is, for example, a SiC transistor. The electronic component 20b is a diode. The metal layer 14 electrically connects the source terminal of the electronic component 20a and the anode terminal of the electronic component 20b. The metal layer 34 electrically connects the drain terminal of the electronic component 20a and the cathode terminal of the electronic component 20b. The other configuration is the same as that of the first embodiment, and the description is omitted. As in the second modification of the first embodiment, the metal layer 14 and the metal layer 34 may electrically connect at least two of the plurality of electronic components.

[Comparison with Comparative Example]
7 to 8B are cross-sectional views showing a method for manufacturing the module according to Comparative Example 1. As shown in FIG. 7, in Comparative Example 1, the bonding layer 12 is not separated and is provided on the entire lower surface of the insulating layer 10. The bonding layer 12 contracts by curing. The insulating layer 10, which is a resin insulating layer, is soft. Therefore, the insulating layer 10 warps in an upward convex shape. For example, when the thickness of the bonding layer 12 is 1/10 or more of the thickness of the insulating layer 10, the insulating layer 10 warps. This makes it difficult to bond the electronic component 20 and the substrate 30.

  As shown in FIG. 8A, when the terminal 23 of the electronic component 20 and the metal layer 34 are bonded, a conductive bonding agent is used as the bonding layer 32. As the conductive bonding agent, metal paste, solder, or the like can be considered. When using these conductive bonding agents, the heat treatment temperature is, for example, about 300 ° C. (a temperature higher than the softening temperature of the bonding layer 12). The substrate 30 is, for example, a ceramic substrate and does not deform if it is heat-treated at 300 ° C. When the insulating layer 10 is made of polyimide resin, the softening temperature of the insulating layer 10 becomes higher than 300 ° C. Since the softening temperature of the bonding layer 12 which is the resin adhesive is low, it is softened by heat treatment at about 300 ° C. When the insulating layer 10 and the substrate 30 are pressed, the insulating layer 10 elastically deforms even at a softening temperature or lower. As a result, the bonding layer 12 contacts the substrate 30. Since the bonding layer 12 is softened, the bonding layer 12 adheres to the substrate 30. As a result, in FIG. 4B, the resin 28 cannot be filled between the metal layer 14 and the metal layer 34, and the withstand voltage may decrease.

  As shown in FIG. 8B, in order to suppress the adhesion between the bonding layer 12 and the substrate 30, the insulating layer 10 and the substrate 30 are connected to each other before the electronic component 20 and the conductive block 21 are bonded to the metal layer 34. It is also conceivable to provide an insulating layer 27 of resin or the like between them. However, it cannot be applied to a module having a gap between the electronic component 20 and the conductive block 21. Further, the void 25 remains between the electronic component 20 and the conductive block 21. As a result, the resin 28 cannot completely seal the electronic component 20.

  According to Example 1 and its modification, as shown in FIGS. 1B to 1D, a plurality of bonding layers 12 (resin bonding layers) are formed on the lower surface of the insulating layer 10 (resin insulating layer). . As shown in FIG. 2A, a plurality of components including the at least one electronic component 20 (the electronic component 20 and the conductive block 21) are respectively disposed on the lower surface of the insulating layer 10 via the plurality of bonding layers 12 that are partially provided. To join. As a result, as shown in FIG. 4A, the void 25 is formed between the insulating layer 10 and the substrate 30 (insulating layer).

  Since the bonding layer 12 is partially applied and divided, it is possible to suppress the warp of the insulating layer 10 which is the resin insulating layer as shown in FIG. 7. As shown in FIG. 8A, it is possible to prevent the insulating layer 10 and the bonding layer 12 between the electronic component 20 and the conductive block 21 from being softened and coming into contact with the metal layer 34. In order to prevent the bonding layer 12 from adhering to the substrate 30, the length L2 of the bonding layer 12 exposed from the electronic component 20 and the conductive block 21 in FIG. It is preferably ¼ or less, and more preferably 1/10 or less, of the distance L1 from 21.

  In the step of bonding the electronic component 20 and the conductive block 21 to the metal layer 34 (first metal layer), the bonding layer 32 (conductive bonding layer) is provided between the electronic component 20 and the conductive block 21 and the metal layer 34. Is provided, the insulating layer 10 and the substrate 30 are pressed toward each other, and the bonding layer 32 is heated. At this time, in Comparative Example 1, as shown in FIG. 8A, the insulating layer 10 between the electronic component 20 and the conductive block 21 is deformed and the bonding layer 12 comes into contact with the substrate 30. As a result, the insulating layer 10 is bonded to the substrate 30, but in Example 1 and its modified example, the bonding layer 12 between the electronic component 20 and the conductive block 21 is removed, and FIG. Adhesion between the bonding layer 12 and the substrate 30 as described above can be suppressed.

  The softening temperature of the insulating layer 10 is preferably higher than the softening temperature of the bonding layer 12, and preferably higher than the heat treatment temperature of the bonding layer 32. From this viewpoint, the insulating layer 10 is preferably polyimide.

  The substrate 30 is a ceramic layer. Thereby, the deformation of the substrate 30 due to the heating of the bonding layer 32 can be suppressed. The substrate 30 is preferably thicker than the insulating layer 10.

  As shown in FIG. 4B, after bonding the electronic component 20 and the conductive block 21 to the metal layer 34, the resin 28 is filled in the gap 25 between the lower surface of the insulating layer 10 and the upper surface of the substrate 30. As a result, the gap 25 does not remain between the electronic component 20 and the conductive block 21 as shown in FIG. 8B, and the electronic component 20 can be resin-sealed.

  The metal layer 14 (second metal layer) is thicker than the insulating layer 10. In this case, the insulating layer 10 is thin, and the insulating layer 10 warps or the insulating layer 10 deforms as shown in FIG. Therefore, it is preferable to separate the bonding layer 12. The thickness of the metal layer 14 is preferably 1.5 times the thickness of the insulating layer 10, and more preferably twice.

  As shown in FIGS. 1B to 1D, the step of forming the plurality of bonding layers 12 includes a step of spraying resin with the mask layer 50 as a mask. Thereby, the bonding layer 12 can be easily applied. An inkjet method, a screen printing method, or the like may be used in the step of forming the plurality of bonding layers 12.

  FIG. 9A is a cross-sectional view showing the method for forming the bonding layer in Example 1, and FIG. 9B is a view showing the thickness of the sprayed bonding layer. As shown in FIG. 9A, a part of the droplet 56 such as a resin adheres to the end portion of the bonding layer 12, but a part thereof is blocked by the mask layer 50. As a result, as shown in FIG. 9B, the thickness of the bonding layer 12 is uniform to some extent in the central region, but becomes thinner from the center toward the periphery, and the side surfaces of the bonding layer 12 are inclined. For example, the width L3 of the side surface of the bonding layer 12 is about 10 times the thickness T of the bonding layer 12. For example, when the thickness T is 10 μm, L3 is 100 μm. L3 / T is preferably 1 or more, more preferably 5 or more.

  Thus, the thickness of the periphery of the bonding layer 12 becomes thinner toward the outside. Specifically, the bonding layer 12 is thinner around the bonding region where the electronic component 20 and the conductive block 21 are bonded (this is the central region) toward the periphery of the bonding layer 12. The thermal expansion in the vertical direction (thickness direction) of the thin portion of the bonding layer 12 is reduced, and the thermal stress between the bonding layer 12 and the insulating layer 10 is reduced. Thereby, the peeling force in the vertical direction around the thin bonding layer 12 is suppressed. Further, the bonding layer 12 is not provided outside the bonding layer 12 and is sealed with the resin 28. Therefore, the electronic component 20 is more completely sealed.

  Moreover, the lateral (planar) extension of the bonding layer 12 decreases toward the periphery, and the bonding layer 12 is not provided outside the bonding layer 12. Therefore, the lateral extension of the bonding layer 12 is suppressed. Thereby, the warp of the insulating layer 10 can be suppressed. As a result, the warpage of the entire module can be suppressed.

[Modification 3 of Embodiment 1]
FIG. 10 is a plan view of a module according to Modification 3 of Example 1. FIG. 10 mainly shows the insulating layer 10, the bonding layers 12a and 12b, the metal layers 14a and 14b, the through holes 16a to 16c, the electronic component 20, the conductive block 21, the terminals 22a and 22b, and FIG. Corresponds to a top view showing the insulating layer 10 through. FIGS. 1A to 4 of the first embodiment correspond to the AA cross section of FIG. 10. However, the sizes and the like of the members in FIG. 10 and FIGS. 1A to 4 do not necessarily match.

  First, as shown in FIG. 10, a rectangular insulating layer 10 is provided, and an electronic component 20 is provided on the right side of the insulating layer 10. A bonding layer 12a is provided between the electronic component 20 and the insulating layer 10, and the bonding layer 12a is formed in a rectangular shape slightly protruding from the entire circumference of the electronic component 20. On the other hand, the conductive block 21 is provided on the left side of the insulating layer 10 with a space from the electronic component 20, and the bonding layer 12 b is provided between the insulating layer 10 and the conductive block 21. The bonding layer 12b is also provided so as to slightly protrude from the periphery of the conductive block 21.

  The source terminal 22a of the electronic component 20 and the metal layer 14a are connected through the through hole 16a, and the metal layer 14a extends in the vertical direction. The gate terminal 22b and the conductive block 21 of the electronic component 20 are electrically connected to the metal layer 14b through the through holes 16b and 16c, respectively.

  Since the current flowing through the gate terminal 22b is smaller than the current flowing through the source terminal 22a, the area of the gate terminal 22b is smaller than the area of the source terminal 22a. The areas of the through holes 16b and 16c are smaller than the area of the through hole 16a. When the through holes 16a include a plurality of through holes, the through holes 16b include a plurality of through holes, and the through holes 16c include a plurality of through holes, the total area of the through holes 16b and the total area of the through holes 16c are Each area is smaller than the total area of the plurality of through holes 16a.

  The metal layer 14a is a source electrode connected to the source terminal 22a. The metal layer 14b is a gate wiring, the right end of the metal layer 14b is connected to the gate terminal 22b on the left side of the electronic component 20, and the left end of the metal layer 14b is connected to the conductive block 21. The metal layer 14b extends between the contact portions (that is, the through holes 16b and 16c) on both sides.

  The current flowing through the metal layer 14b serving as the gate wiring is smaller than the current flowing through the metal layer 14a serving as the source electrode. Therefore, the width W2 of the metal layer 14b in the direction intersecting (for example, orthogonal to) the current flowing direction in the metal layer 14b (that is, the arrangement direction of the through holes 16b and 16c) intersects the current flowing direction in the metal layer 14a. It can be designed to be smaller than the width W1 of the metal layer 14a in the direction (for example, orthogonal). Further, the width W2 of the metal layer 14b is smaller than the length L3 of the metal layer 14b in the direction of current flow in the metal layer 14b.

  In Comparative Example 1 of FIG. 7, since the bonding layer 12 is provided on the entire surface of the insulating layer 10, the insulating layer 10 warps due to the contraction of the bonding layer 12. As a result, stress is applied to the metal layers 14a and 14b from the insulating layer 10. The stress of the metal layers 14a and 14b is applied to the through holes 16a and 16b. The contact area between the gate terminal 22b and the metal layer 14b through the through hole 16b is smaller than the contact area between the source terminal 22a and the metal layer 14a through the through hole 16a. Therefore, in the through hole 16b, there is a high possibility that connection failure will occur due to the stress of the metal layer 14b as compared with the through hole 16a.

  In the region where the electronic component 20 is joined and the region where the conductive block 21 is joined, the warp of the insulating layer 10 is suppressed because the electronic component 20 and the conductive block 21 have rigidity. Therefore, the stress applied to the metal layer 14b is small. In a region other than the region where the electronic component 20 and the conductive block 21 are provided (region outside the electronic component 20 and the conductive block 21), when the insulating layer 10 warps, stress is applied to the metal layer 14b.

  In the third modification of the first embodiment, there is a region between the electronic component 20 and the conductive block 21 where the two bonding layers 12a and 12b are not provided. In this region, there is almost no warp of the insulating layer 10 due to contraction of the bonding layer 12 during curing. That is, in the region where the metal layer 14b is provided, the region where the electronic component 20 and the conductive block 21 are provided, and the region where the bonding layers 12a and 12b are not provided, the insulating layer 10 does not warp. hard. As described above, in the region where the metal layer 14b is provided, the factor that the insulating layer 10 warps is small, and the stress applied to the metal layer 14b is small. Therefore, stress is unlikely to be applied to the contact portion between the gate terminal 22b and the metal layer 14b, which has a small contact area. As described above, by partially applying the bonding layer 12, a structure in which stress is less likely to be applied to the through holes 16b is formed, and reliability is improved.

  According to the third modification of the first embodiment, the metal layer 14b (second metal layer) is connected to the gate terminal 22b through the through hole 16b (first through hole) penetrating the insulating layer 10 and the insulating layer 10 is formed. It is connected to the conductive block 21 (a component other than the electronic component 20 among the plurality of components) via the through hole 16c (second through hole) penetrating therethrough. At this time, the bonding layer 12a (first resin bonding layer) that bonds the electronic component 20 to the insulating layer 10 and the bonding layer 12b (second resin bonding layer) that bonds the conductive block 21 to the insulating layer 10 are separated. .. Thereby, even if the bonding layer 12 contracts, the warp of the insulating layer 10 due to the contraction of the bonding layer 12 can be suppressed in most of the region where the metal layer 14b is provided. Therefore, it is possible to suppress defective bonding between the metal layer 14b and the gate terminal 22b. In addition, it is possible to suppress a joint failure between the metal layer 14b and the conductive block 21.

  The area of the gate terminal 22b (second terminal) is smaller than the area of the source terminal 22a (first terminal). For example, the area of the gate terminal 22b is 1/2 or less of the area of the source terminal 22a, and is 1/5 or less. Thus, the through hole 16b connected to the gate terminal 22b having a small area is small. For example, the area of the through hole 16b is 1/2 or less of the area of the through hole 16a, and is 1/5 or less. Since the contact area is small as described above, peeling or cracks are likely to occur between the metal layer 14b and the gate terminal 22b, resulting in a defective joint. Therefore, by separating the bonding layers 12a and 12b by partial coating of the bonding layer, it is possible to suppress the bonding failure between the metal layer 14b and the gate terminal 22b as described above.

  The width W2 is smaller than the length L3 of the metal layer 14b. For example, W2 is 1/2 or less and 1/5 or less of L3. Further, the width W2 is smaller than the distance L4 between the center of the through hole 16b and the center of the through hole 16c. For example, W2 is 1/2 or less and 1/5 or less of L4. As described above, the metal layer 14b having the narrow width W2 is easily peeled off from the insulating layer 10 when stress is applied to the metal layer 14b. Therefore, by separating the bonding layers 12a and 12b, the warp of the insulating layer 10 can be suppressed and the stress applied to the metal layer 14b can be suppressed. Therefore, the peeling of the metal layer 14b from the insulating layer 10 can be suppressed.

  The distance L5 between the bonding layers 12a and 12b is preferably 1/2 or more of L3 or L4, and preferably 2/3 or more. This can reduce the region where the insulating layer 10 warps in the region where the metal layer 14b is provided. Therefore, the stress applied to the metal layer 14b can be suppressed. When the metal layer 14b is bent in a plan view, the length L3 and the distance L4 are the length and the distance along the metal layer 14b (that is, along the current flow).

  In the first embodiment and its modification, the power module mounting the power semiconductor element has been described as an example, but a module mounting electronic components other than the power semiconductor element may be used.

  Although the embodiments of the present invention have been described in detail above, the present invention is not limited to these specific embodiments, and various modifications and alterations are possible within the scope of the gist of the present invention described in the claims. It can be changed.

10 Insulating layer 12, 12a, 12b, 32 Bonding layer 14, 14a, 14b, 34, 36 Metal layer 16, 16a-16c Through hole 20, 20a, 20b Electronic component 22, 23 Terminal 25 Void 28 Resin 30 Substrate

Claims (11)

A step of forming a plurality of resin bonding layers on the lower surface of the resin insulating layer,
Bonding a plurality of components including at least one electronic component to the lower surface of the resin insulating layer via the plurality of resin bonding layers,
A step of joining the plurality of components to a first metal layer provided on an upper surface of the insulating layer so as to sandwich a space between the resin insulating layer and the insulating layer;
A method of manufacturing a module including.   In the step of joining the plurality of components to the first metal layer, a conductive joining layer is provided between the plurality of components and the first metal layer, and the resin insulating layer and the insulating layer are close to each other. The method for manufacturing a module according to claim 1, further comprising a step of pressing the conductive bonding layer to heat the conductive bonding layer.   The method of manufacturing a module according to claim 2, wherein the step of heating the conductive bonding layer includes a step of heating the conductive bonding layer to a temperature higher than a softening temperature of the resin bonding layer.   The said insulating layer is a ceramic layer, The manufacturing method of the module as described in any one of Claim 1 to 3.   5. The method according to claim 1, further comprising a step of filling a space between a lower surface of the resin insulating layer and an upper surface of the insulating layer with resin after the step of joining the plurality of components to the first metal layer. A method for manufacturing the module according to one item.   The method according to claim 1, further comprising: forming a second metal layer on the upper surface of the resin insulating layer, the second metal layer penetrating the resin insulating layer and electrically connecting to at least one of the plurality of components. Manufacturing method of module. A resin insulation layer,
A ceramic layer,
A first metal layer provided on the upper surface of the ceramic layer;
A plurality of at least one electronic component that are respectively joined via a plurality of resin joining layers partially provided on the lower surface of the resin insulating layer and also joined via a conductive joining layer on the upper surface of the first metal layer. Parts of
A module comprising.   The module according to claim 7, further comprising a second metal layer provided on an upper surface of the resin insulation layer, the second metal layer being thicker than the resin insulation layer and penetrating the resin insulation layer and electrically connected to at least one of the plurality of components. ..   The module according to claim 7 or 8, wherein the resin bonding layer is thinned toward a periphery of the resin bonding layer around a bonding region where the plurality of components are bonded. The electronic component includes a terminal on the upper surface,
The second metal layer is connected to the terminal via a first through hole penetrating the resin insulating layer, and is connected to the terminal via a second through hole penetrating the resin insulating layer, except for the electronic parts. Connected with parts,
The resin bonding layer bonds a first resin bonding layer that bonds the electronic component and the resin insulating layer, and bonds a component other than the electronic component and the resin insulating layer to each other and separates from the first resin bonding layer. The module according to claim 8, further comprising a second resin bonding layer. The terminal includes a first terminal and a second terminal having an area smaller than the area of the first terminal,
The module according to claim 10, wherein the second metal layer is connected to the second terminal through the first through hole and is connected to a component other than the electronic component through the second through hole.

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