JP2020057771A - Module and method of manufacturing the same - Google Patents

Abstract

To provide a module capable of being miniaturized or capable of suppressing the peeling of a wiring line, and a method of manufacturing the same.SOLUTION: A module includes: a sheet module 11 which includes an insulating layer 10, a first wiring line 14a electrically connected to an electronic component 20a through a first through hole that penetrates through the insulating layer, the first wiring line having a first pad 15a at an end thereof, and a second wiring line 14b electrically connected to an electronic component 20b through a second through hole that penetrates through the insulating layer, the second wiring line having a second pad 15b at an end thereof; and a die pad 32 to which a lower face of each electronic component is fixed. The module further includes: a first frame pad 35a to which the first pad is fixed; a first lead 34a extending from the first frame pad; a second frame pad 35b to which the second pad is fixed; a second lead 34b extending from the second frame pad in the extension direction of the first lead; and a third lead 34c provided between the first lead and the second lead and formed integrally with the die pad.SELECTED DRAWING: Figure 12

Description

  The present invention relates to a module and a method for manufacturing the same, and for example, to a module on which electronic components are mounted and a method for manufacturing the same.

  As a method of electrically connecting an electronic component such as a power semiconductor element mounted on a lead frame and a lead of the lead frame, it is known to use a thin metal wire such as a bonding wire. In a power module in which a power semiconductor element is mounted, it is known that an electronic component is mounted on an upper surface of an insulating layer and wiring is provided from the lower surface of the insulating layer to the electronic component through a through hole penetrating the insulating layer ( For example, Patent Document 1).

JP 2016-46523 A

  When the electronic component and the lead are connected using a bonding wire, the bonding wire is formed in a loop shape. This makes the module thicker. Alternatively, when an electronic component or the like generates heat, the resin insulating layer is distorted due to a difference in linear thermal expansion coefficient between the resin insulating layer and the wiring. As a result, the wiring in the through hole may be peeled off from the electronic component.

  The present invention has been made in view of the above problems, and has as its object to reduce the size or to prevent the wiring from peeling off.

  The present invention provides an insulating layer, an electronic component mounted on a lower surface of the insulating layer, and an electronic component that is electrically connected to the electronic component via a first through hole penetrating the insulating layer. Extending, a first wiring having a first pad at an end, and a second through hole penetrating the insulating layer, electrically connected to the electronic component, extending an upper surface of the insulating layer; A second module having a second wiring having a second pad, a die pad to which a lower surface of the electronic component is fixed, and a first frame pad to which the first pad is fixed, wherein the first frame pad A second lead extending from the second frame pad substantially parallel to a direction in which the first lead extends, and a second lead extending from the second frame pad to the second frame pad. Between one lead and the second lead Provided, formed on the die pad integrally, and a third lead for substantially extending parallel to the extending direction of the first lead and the second lead, a module comprising a.

  In the above configuration, a cut may be provided in the insulating layer between the first frame pad and the third lead and / or between the second frame pad and the third lead. .

  In the above configuration, an upper surface of the first pad and a lower surface of the first frame pad may be fixed, and an upper surface of the second pad and a lower surface of the second frame pad may be fixed.

  In the above configuration, the lower surface of the first pad and the upper surface of the first frame pad may be fixed, and the lower surface of the second pad and the upper surface of the second frame pad may be fixed.

  In the above configuration, a lower surface of the first pad is fixed to an upper surface of the first frame pad via a first shim, and a lower surface of the second pad is fixed to an upper surface of the second frame pad via a second shim. It can be configured.

  In the above configuration, the seat module may include a plurality of the electronic components.

  In the above configuration, the electronic component may be a power semiconductor element, and the insulating layer may be a polyimide sheet.

  In the above configuration, the electronic component includes a first electronic component and a second electronic component, and the insulating layer between the first electronic component and the second electronic component is provided with a slit penetrating the insulating layer; can do.

  The present invention relates to a sheet module having an insulating layer in which an electronic component is mounted on a lower surface, a wiring electrically connected to the electronic component is provided on an upper surface, and an opening is provided near an end of the wiring. Preparing, and inserting a frame pad provided at an end of a lead into the opening, and electrically connecting the frame pad to the wiring in a state where the frame pad is inserted into the opening. This is a method for manufacturing a module including:

  In the above configuration, the step of inserting the frame pad into the opening includes preparing a die pad to which a lower surface of the electronic component is fixed, and a lead frame having the lead extending from the frame pad to the opposite side of the die pad, The method may further include a step of inserting the frame pad into the opening, and the method of manufacturing the module may include a step of fixing the sheet module to the lead frame with the frame pad inserted into the opening. it can.

  In the above configuration, in the step of inserting the frame pad into the opening, a metal layer may be provided on the insulating layer so as to surround the opening.

  According to the present invention, an electronic component is mounted on a lower surface, a first wiring and a second wiring electrically connected to the electronic component are provided on an upper surface, and a first pad of the first wiring and a second wiring of the second wiring are provided. Preparing a sheet module having an insulating layer provided with a notch between the second pad and a die pad to which a lower surface of the electronic component is fixed; a first frame pad fixed to the first pad; A step of fixing the sheet module to a lead frame having a second frame pad fixed to the second pad, and a step of resin sealing the sheet module and the lead frame. In this step, the molten resin passes through the cut in the module.

  In the above configuration, in the resin sealing step, a metal provided with a gate for injecting the resin so that the molten resin flows in a direction parallel to an upper surface of the die pad and / or in a direction from the lower surface of the die pad to the upper surface. A configuration using a mold can be adopted.

  The present invention provides a first electronic component having a resin insulating layer, a first terminal and a second terminal on an upper surface, and mounted on a lower surface of the resin insulating layer, a lower surface of the resin insulating layer, and the first electronic component. A resin bonding layer for bonding to the upper surface of the semiconductor device, and an inner surface of the resin insulating layer and one or a plurality of first through holes penetrating the resin bonding layer and an upper surface of the resin insulating layer, and connected to the first terminal. A first wiring to be provided, an inner surface of one or a plurality of second through holes penetrating the resin insulating layer and the resin bonding layer, and a second wiring provided on the upper surface of the resin insulating layer and connected to the second terminal. An opening is provided between the first terminal and the second terminal and between the first wiring and the second wiring, and an opening penetrating the resin insulating layer and the resin bonding layer is provided; The module has no metal layer.

  In the above configuration, a total area in which the one or more first through holes are connected to the first terminal is smaller than a total area in which the one or more second through holes are connected to the second terminal. can do.

  The said structure WHEREIN: The said opening is provided between the said 1 or several 1st through-holes and the said 2nd wiring which are the shortest distance of the said 1 or several 1st through-holes and the said 2nd wiring. It can be configured.

  In the above configuration, an end of the opening may be located outside an outermost end of the one or more first through holes.

  In the above configuration, the first electronic component may be a transistor, the first terminal may be a control terminal of the transistor, and the second terminal may be a terminal other than the control terminal of the transistor.

  The said structure WHEREIN: The said opening can be set as the structure which overlaps with the said 1st electronic component in the thickness direction of the said resin insulating layer, and does not overlap with the area | region outside the said 1st electronic component.

  In the above configuration, a region where the opening is projected onto the first electronic component may be configured to divide the first electronic component into two regions.

  In the above configuration, the thickness of each of the first wiring and the second wiring may be larger than the total thickness of the resin insulating layer and the resin bonding layer.

  In the above configuration, the electronic device further includes a second electronic component having a third terminal on an upper surface and mounted on a lower surface of the resin insulating layer, wherein at least one of the first wiring and the second wiring has the third terminal and the third wiring. A configuration may be employed in which the first terminal and at least one of the second terminals are connected.

  The present invention provides an insulating layer having flexibility, an electronic component mounted on the lower surface of the insulating layer, and electrically connected to the electronic component through a through hole penetrating the insulating layer. And a metal layer provided on the insulating layer so as to surround an opening provided in the insulating layer adjacent to the pad and extending on an upper surface of the insulating layer.

  According to the present invention, size reduction can be achieved.

1A to 1D are cross-sectional views illustrating a method for manufacturing a module according to the first embodiment. FIGS. 2A and 2B are plan views illustrating the method for manufacturing the module according to the first embodiment. FIGS. 3A and 3B are plan views illustrating the method for manufacturing the module according to the first embodiment. FIG. 4A is a plan view of the lead frame according to the first embodiment, and FIGS. 4B and 4C are cross-sectional views taken along lines AA and BB of FIG. 4A, respectively. . FIG. 5 is a plan view illustrating the method for manufacturing the module according to the first embodiment. FIG. 6 is a plan view illustrating the method for manufacturing the module according to the first embodiment. 7A and 7B are a sectional view taken along the line AA and a sectional view taken along the line BB of FIG. FIGS. 8A and 8B are cross-sectional views illustrating a method for manufacturing the module according to the first embodiment. FIG. 9 is a plan view illustrating the method for manufacturing the module according to the first embodiment. FIG. 10 is a plan view illustrating the method for manufacturing the module according to the first embodiment. 11A to 11C are cross-sectional views illustrating a method for manufacturing the module according to the first embodiment. FIG. 12 is a plan view of the module according to the first embodiment. 13A and 13B are a cross-sectional view taken along line AA and a cross-sectional view taken along line BB of FIG. 12, respectively. FIG. 14A is a plan view of a module according to a first modification of the first embodiment, and FIG. 14B is a cross-sectional view taken along the line AA of FIG. FIG. 15A is a cross-sectional view of a module according to a second modification of the first embodiment, and FIGS. 15B and 15C are cross-sectional views of a module according to a third modification of the first embodiment. FIG. 16A is a plan view of a module according to a fourth modification of the first embodiment, and FIG. 16B is a cross-sectional view taken along the line AA of FIG. FIG. 17A is a plan view of a sheet module according to a fifth modification of the first embodiment, and FIG. 17B is a plan view illustrating a method of manufacturing the module according to the fifth modification of the first embodiment. FIG. 18A is a plan view of a sheet module according to a sixth modification of the first embodiment, and FIG. 18B is a plan view illustrating a method of manufacturing the module according to the sixth modification of the first embodiment. FIG. 19A is a plan view of a sheet module according to a seventh modification of the first embodiment, and FIG. 19B is a plan view illustrating a module manufacturing method according to a seventh modification of the first embodiment. FIG. 20A is a plan view of the sheet module according to the eighth modification of the first embodiment, and FIG. 20B is a plan view illustrating the module manufacturing method according to the eighth modification of the first embodiment. FIG. 21A is a plan view of the module according to the second embodiment, and FIG. 21B is an enlarged view around the electronic component in FIG. FIG. 22 is a cross-sectional view taken along the line AA of FIG. FIGS. 23A to 23D are cross-sectional views (part 1) illustrating a method for manufacturing a module according to the second embodiment. FIG. 24A and FIG. 24B are cross-sectional views (part 2) illustrating the method of manufacturing the module according to the second embodiment. FIGS. 25A and 25B are cross-sectional views of the module according to Comparative Example 1. FIG. FIGS. 26A and 26B are plan views of modules according to Modifications 1 and 2 of the second embodiment. FIG. 27 is a cross-sectional view of a module according to a third modification of the second embodiment. FIG. 28 is a cross-sectional view of a module according to Modification 4 of Example 2. FIG. 29 is a plan view of a seat module according to a fifth modification of the second embodiment. 30A is a plan view of a lead frame according to a sixth modification of the second embodiment, and FIGS. 30B and 30C are cross-sectional views taken along line AA and line BB of FIG. 30A. It is. FIG. 31 is a plan view of a module according to a modification 6 of the second embodiment. FIG. 32A is a plan view of a seat module according to a seventh modification of the second embodiment, and FIG. 32B is a cross-sectional view taken along line AA of FIG. FIG. 33A is a plan view of a lead frame according to a seventh modification of the second embodiment, and FIG. 33B is a cross-sectional view taken along a line AA in FIG. FIG. 34A is a plan view of a module according to a modification 7 of the second embodiment, and FIG. 34B is a cross-sectional view taken along a line AA in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIGS. 1A to 1D are cross-sectional views illustrating a module manufacturing method according to the first embodiment. FIGS. 2A to 3B illustrate a module manufacturing method according to the first embodiment. It is a top view. 1 (a) to 1 (d) correspond to the AA cross section of FIGS. 2 (a) to 3 (a). In the planar direction of the insulating layer 10, the arrangement direction of the electronic components 20a and 20b is defined as the X direction, the direction orthogonal to the X direction is defined as the Y direction, and the thickness direction of the insulating layer 10 is defined as the Z direction. FIGS. 2A to 3B show the insulating layer 10, the through holes 16a to 16c, the electronic components 20a and 20b, and the wirings 14a and 14b. 1B to 1D, the number of the through holes 16b is illustrated as two for convenience of the drawing.

  As shown in FIG. 1A, a bonding layer 12 is applied to the lower surface of the insulating layer 10. The application of the bonding layer 12 is performed by, for example, a spin coating method, a spray coating method, or an inkjet method. The insulating layer 10 is a resin insulating layer of polyimide or the like. The bonding layer 12 is, for example, a resin adhesive such as an epoxy resin. The thickness of the insulating layer 10 is, for example, 20 μm to 50 μm. The thickness of the bonding layer 12 is, for example, 5 μm to 20 μm, and is smaller than the thickness of the insulating layer 10.

  As shown in FIG. 1B and FIG. 2A, through holes 16a to 16c penetrating the insulating layer 10 and the bonding layer 12 are formed. The through holes 16a to 16c are formed by irradiating, for example, ultraviolet, visible or infrared laser light 17. The size of the through holes 16a to 16c is, for example, 30 μm to 500 μm. Although the through hole 16c is formed as one large hole, a plurality of through holes 16c may be formed like the through hole 16b.

  As shown in FIGS. 1C and 2B, the electronic components 20a and 20b are brought into contact with the lower surface of the bonding layer 12. By performing the heat treatment, the bonding layer 12 is cured and the electronic components 20 a and 20 b are bonded to the insulating layer 10. The heat treatment is performed, for example, at a temperature of 200 ° C to 300 ° C. Before placing the electronic components 20a and 20b on the bonding layer 12, heat treatment may be performed to enhance the tackiness of the bonding layer 12.

  The electronic components 20a and 20b are power devices, for example, transistors or diodes such as IGBTs (Insulated Gate Bipolar Transistors), bipolar transistors or FETs (Field Effect Transistors). A semiconductor such as Si, GaN, or SiC is used for the transistor or the diode. The electronic components 20a and 20b are, for example, bare chips. In this example, the electronic component 20a is a bare chip of a vertical SiC transistor. The electronic component 20b is a bare chip of a diode.

  Terminals 22a and 22b are provided on the upper surface of the electronic component 20a, and terminals 22c are provided on the lower surface. Terminals 22a, 22b and 22c are a gate terminal, a source terminal and a drain terminal, respectively. The terminal 22d is provided on the upper surface of the electronic component 20b, and the terminal 22e is provided on the lower surface. Terminals 22d and 22e are an anode terminal and a cathode terminal, respectively. The terminals 22a to 22e are formed by a manufacturer that manufactures the electronic components 20a and 20b, and are formed of a metal layer such as copper, gold, or aluminum.

  Terminals 22a, 22b and 22d of electronic components 20a and 20b are exposed to through holes 16a, 16b and 16c, respectively. One through hole 16a is provided, and six through holes 16b are provided in each of the two terminals 22b. A large current flows between the source terminal and the drain terminal. Since the gate terminal is a control terminal, a large current does not flow. For this reason, the terminal 22a is smaller than the terminal 22b. The total area of the through holes 16a is smaller than the total area of the through holes 16b. Note that the source terminal is called a current inflow terminal or a current outflow terminal, and the drain terminal is called a current outflow terminal or a current inflow terminal. The current inflow terminal and the current outflow terminal may be emitter terminals or collector terminals. The control terminal may be a base terminal.

  As shown in FIGS. 1D and 3A, wirings 14a and 14b are formed on the upper surface of the insulating layer 10 and on the inner surfaces of the through holes 16a to 16c. A method for forming the wirings 14a and 14b will be described. A seed layer is formed on the upper surface of the insulating layer 10 and the inner surfaces of the through holes 16a and 16b. The seed layer is formed using, for example, a sputtering method. The seed layer is, for example, a metal layer such as a titanium layer and a copper layer from the insulating layer 10 side. A plating layer is formed on the upper surface of the seed layer. The plating layer is a metal layer such as a copper layer. The plating layer is formed using, for example, an electrolytic plating method by supplying a current to the seed layer. Wirings 14a and 14b are formed by the seed layer and the plating layer. The wirings 14a and 14b may be formed by forming a plating layer on the entire surface of the insulating layer 10 by a plating method and patterning the plating layer, or by forming a resist having an opening in a plating coating region and plating It may be formed by a method of partially forming a plating film in the covering region.

  The wiring 14a is electrically connected to the terminal 22a through the through hole 16a. The wiring 14b is electrically connected to the terminal 22b through the through hole 16b, and is electrically connected to the terminal 22d through the through hole 16c. The wirings 14a and 14b are metal layers such as a copper layer. The thickness of the wirings 14a and 14b is, for example, 50 μm to 100 μm, and is larger than the thickness of the insulating layer 10. The wirings 14a and 14b may be thinner than the insulating layer 10.

  The wiring 14a is thinner than the wiring 14b and extends from the electronic component 20a in the -Y direction. A wide pad 15a formed integrally with the wiring 14a is provided at the tip of the wiring 14a (the end in the -Y direction (the front direction in FIG. 1D)). The wiring 14b connects the electronic components 20a and 20b, and extends from the electronic components 20a and 20b in the -Y direction (the forward direction in FIG. 1D). The tip of the wiring 14b is a pad 15b. The wiring 14b becomes thinner between the pad 15b and a portion connected to the electronic components 20a and 20b. The pad 15b is wider than the narrowest width of the wiring 14b and is provided at the tip of the wiring 14b.

  As shown in FIG. 3B, the insulating layer 10 is cut into a desired shape to form openings 17a to 17c. For cutting, for example, a laser beam or a die cutting device is used. Openings 17a and 17b of insulating layer 10 are formed in pads 15a and 15b in the −Y direction. The openings 17a and 17b have a slit shape extending in the X direction. An opening 17c is formed between pads 15a and 15b. The opening 17c has a slit shape extending in the X direction. The + Y side and the ± X side of the insulating layer 10 (the −X side (left side) of the electronic component 20a and the + X side (right side) of the electronic component 20b) are the electronic components 20a and 20b and the wiring 14a. And 14b are cut along the outer circumference and slightly larger than the outer circumference. Thereby, the outer periphery of the insulating layer 10 is formed. A connection portion 19 extending in the ± X direction is formed on the −Y side of the insulating layer 10. As described above, the electronic components 20a and 20b are mounted on the -Z side surface of the insulating layer 10, the wirings 14a and 14b are formed on the + Z side surface, and the sheet module 11 in which the openings 17a to 17c are formed is completed.

  FIG. 4A is a plan view of the lead frame according to the first embodiment, and FIGS. 4B and 4C are cross-sectional views taken along lines AA and BB of FIG. 4A, respectively. . In the lead frame 30, a die pad (also referred to as an island) 32 is used as a mounting area for the electronic components 20a and 20b, and has a plate-like shape having a thickness. The die pad 32 and the lead 34c are formed integrally via the connection portion 31, and the lead 34c extends in the -Y direction. One ends of the leads 34 a and 34 b are close to the die pad 32. The leads 34a and 34b extend in the -Y direction from one end close to the die pad 32. The tips of the leads 34a and 34b in the + Y direction, that is, the ends close to the die pad 32, are the frame pads 35a and 35b which are formed into a flat plate shape.

  Frame pads 35a and 35b are flat because flat pads 15a, 15b on insulating layer 10 are attached. The leads 34a to 34c are connected by tie bars 36a, and the plurality of lead frames 30 are arranged in the ± X directions. The leads 34a to 34c and the frame pads 35a and 35b are provided by being pressed up in the + Z direction with respect to the upper surface of the die pad 32. As shown in FIG. 15C described later, the leads 34a to 34c and the frame pads 35a and 35b may be flush with the upper surface of the die pad 32. The lead frame 30 is made of, for example, a metal such as a copper alloy.

  FIG. 5 is a plan view illustrating the method for manufacturing the module according to the first embodiment. FIG. 5 illustrates the lead frame 30 and the insulating layer 10. As shown in FIG. 5, the insulating layers 10 connected in the ± X directions by the connecting portions 19 are arranged on the plurality of lead frames 30. Frame pads 35a and 35b are inserted into openings 17a and 17b, respectively.

  FIG. 6 is a plan view illustrating the method of manufacturing the module according to the first embodiment, and FIGS. 7A and 7B are a cross-sectional view taken along the line AA and a cross-sectional view taken along the line BB of FIG. FIG. 6 illustrates the lead frame 30, the insulating layer 10, the wirings 14a and 14b, and the electronic components 20a and 20b.

  As shown in FIGS. 6 to 7B, the frame pads 35a and 35b are inserted into the openings 17a and 17b from the -Y direction. Specifically, the frame pads 35a and 35b of the leads 34a and 34b are inserted from the -Z side of the insulating layer 10 through the openings 17a and 17b toward the + Z side. Therefore, the −Z side surfaces of the frame pads 35 a and 35 b of the leads 34 a and 34 b are opposed to the + Z side surfaces of the pads 15 a and 15 b of the insulating layer 10.

  In this state, the sheet module 11 based on the insulating layer 10 shown in FIG. The openings 17a and 17b are support means for fixing the lead frame 30 and the sheet module 11. Alternatively, the frame pads 35a and 35b of the lead frame 30 serve as support means for fixing the insulating layer 10 and the lead frame 30. Thus, the tips of the pads 15a and 15b are located below the frame pads 35a and 35b. Since the lead 34c is connected to the die pad 32, the lead 34c is not inserted into the opening 17c.

  The pads 15a and 15b and the frame pads 35a and 35b are joined using the joining layer 38, respectively. The bonding layer 38 is, for example, a metal paste such as a copper paste or a silver paste, or solder. The bonding layer 38 is provided on the upper surfaces of the pads 15a and 15b or the lower surfaces of the frame pads 35a and 35b in advance. When the bonding layer 38 is a metal paste, the bonding layer 38 is applied using, for example, a printing method, a potting method, a spray coating method, or an inkjet method. The bonding layer 38 is brought into contact with the pads 15a and 15b and the frame pads 35a and 35b. By performing the heat treatment, the bonding layer 38 is fired. Thus, pads 15a and 15b and frame pads 35a and 35b are thermally, mechanically and electrically joined. The heat treatment temperature is, for example, 200 ° C. to 300 ° C., and is set to a temperature at which the insulating layer 10 and the bonding layer 12 are not softened.

  FIGS. 8A and 8B are cross-sectional views illustrating a method for manufacturing the module according to the first embodiment. As shown in FIG. 8A, the lower surfaces of the electronic components 20a and 20b are mounted on the upper surface of the die pad 32, and are bonded using the bonding layer 24. The bonding layer 24 is, for example, a metal paste such as a copper paste or a silver paste, or solder. The bonding layer 24 is provided on the upper surface of the die pad 32. When the bonding layer 24 is a metal paste, the bonding layer 24 is applied using, for example, a printing method, a potting method, a spray coating method, or an inkjet method. By performing the heat treatment, the bonding layer 24 is fired. As a result, the terminals 22c and 22e and the die pad 32 are thermally, mechanically and electrically joined. The heat treatment temperature is, for example, 200 ° C. to 300 ° C., and is a temperature at which the insulating layer 10 and the bonding layer 12 are not softened.

  FIG. 9 is a plan view illustrating the method for manufacturing the module according to the first embodiment. FIG. 9 illustrates the lead frame 30, the insulating layer 10, the wirings 14a and 14b, and the electronic components 20a and 20b.

  As shown in FIG. 9, four regions 42 (see FIG. 6) of the insulating layer 10 are cut. For cutting, for example, a laser beam, a die cutting device or a cutter is used. As a result, the insulating layer 10 and the bonding layer 12 on both sides of the pads 15a and 15b on the ± Y side of the −Y end are cut off, thereby forming a bifurcated foot structure of the insulating layer 10 and the bonding layer 12 as shown in FIG. Is done. In other words, the connection portion 19 in FIG. 3B is separated, and a structure is formed in which a concave cut 40 is formed between the pads 15a and 15b.

  FIG. 10 is a plan view illustrating the method for manufacturing the module according to the first embodiment. FIG. 10 illustrates the lead frame 30, the insulating layer 10, the wirings 14a and 14b, the electronic components 20a and 20b, and the sealing resin 28.

  As shown in FIGS. 10 and 8B, the electronic components 20a and 20b are mounted on the die pad 32. The electronic components 20a and 20b are provided via the bonding layer 12, and the sealing resin 28 is formed so as to cover the sheet module 11 including the insulating layer 10 on which the wirings 14a and 14b are formed. The sealing resin 28 is, for example, a thermosetting resin such as an epoxy resin. For forming the sealing resin 28, a transfer molding method, a vacuum printing method, or a compression molding method can be used.

  11A to 11C are cross-sectional views illustrating a method for manufacturing the module according to the first embodiment. 11A and 11B are cross-sectional views near the leads 34a and 34c, and FIG. 11C is a cross-sectional view near the leads 34c. The illustration of the bonding layers 12, 24, and 38 is omitted. ing. As illustrated in FIGS. 11A and 11B, for example, in the case of transfer molding, the lead frame 30 on which the sheet module 11 is mounted is installed in a lower mold 52. The lower surface of the die pad 32 is brought into contact with the lower mold 52, and the upper mold 50 and the lower mold 52 are brought into contact. An injection gate 51 is provided at a part between the upper mold 50 and the lower mold 52. Thereafter, the resin 27 is injected from the gate 51 into a cavity 53 formed between the upper mold 50 and the lower mold 52 as shown by an arrow 56. Thereafter, the resin 27 is cured by heating. By bringing the lower surface of the die pad 32 into contact with the lower mold 52, the lower surface of the die pad 32 is exposed from the sealing resin 28. If the lower surface of the die pad 32 is separated from the lower mold 52, the lower surface of the die pad 32 is sealed with the sealing resin 28. Which one to use is arbitrary. Thereafter, the lead frame 30 is removed from the upper mold 50 and the lower mold 52. Thereafter, the tie bars 36a and 36b are cut into individual pieces.

  In the case of the transfer molding method, the injection pressure of the molten resin 27 is high. Therefore, when the flow of the resin 27 toward the −Z direction occurs in the region 57, a force in the −Z direction is applied to the seat module 11. Therefore, a force is generated between the frame pads 35a and 35b and the pads 15a and 15b to separate the bond. Therefore, the flow of the resin 27 is set in a direction parallel to the upper surface of the die pad 32 (the plane direction of the XY plane) and / or in a direction from the lower surface of the die pad 32 to the upper surface (+ Z direction). Thereby, the force at which the bonding between the frame pads 35a and 35b and the pads 15a and 15b is separated is suppressed.

  Since the melted resin 27 has a high viscosity, it spreads into the cavity 53 while maintaining the injected direction. In FIG. 11A, the gate 51 is provided on the side surface of the upper mold 50. The resin 27 is injected from the gate 51 in the −Y direction as indicated by an arrow 56. As a result, the resin 27 spreads in the cavity 53 in the −Y direction, and the flow of the resin in the region 57 is in the XY plane direction. Therefore, the force in the −Z direction of the region 57 becomes weak. The resin sealing gate trace 29 is formed on a side surface of the sealing resin 28.

  In FIG. 11B, the gate 51 is provided on the upper surface of the lower mold 52. The resin 27 is injected from the gate 51 in the −Y direction and the + Z direction as indicated by an arrow 56. As a result, the resin 27 spreads in the cavity 53 in the −Y direction and the + Z direction, and the flow of the resin in the region 57 becomes the + Z direction. Therefore, the force in the −Z direction of the region 57 becomes weak. The resin sealing gate trace 29 is formed on the lower surface of the sealing resin 28. As described above, the position of the gate 51 is preferably arranged at a position corresponding to one of the lower surface and the four side surfaces of the sealing resin 28.

  The concave cut 40 will be described. 10 and 11C, a space 55 exists between the frame pads 35a and 35b, the connection portion 31, and the die pad 32. The space 55 serves as a flow path for the resin 27. If the cut 40 is not formed in the insulating layer 10, the resin 27 that enters the space 55 from the space on the ± X side of the connection part 31 into the space 55 as shown by an arrow 58 applies pressure to the insulating layer 10. This is a load on the seat module 11. If the cuts 40 are formed in the insulating layer 10, the space 55 of the inflow channel of the resin 27 can be opened. In order to prevent the pressure of the resin 27 from being applied to the insulating layer 10, the + Y side of the cut 40 preferably overlaps the die pad 32 when viewed from the Z direction, and the ± X side of the cut 40 is connected to the frame pads 35a and 35b. It is preferred that it is close to or overlaps with. Thereby, the inflow channel of the resin 27 can be expanded, and the load on the sheet module 11 can be reduced. From the viewpoint of securing the flow path of the resin 27 indicated by the arrow 58, the cuts 40 may be provided at least between the lead 34c and the frame pad 35a and between the lead 34c and the frame pad 35b.

  FIG. 12 is a plan view of the module according to the first embodiment, and FIGS. 13A and 13B are a cross-sectional view taken along line AA and a line BB of FIG. 12, respectively. As shown in FIGS. 12 to 13B, a sealing resin 28 is provided on the die pad 32. The sealing resin 28 seals the insulating layer 10 and the electronic components 20a and 20b. The leads 34a to 34c extend in the -Y direction from the sealing resin 28. The lead 34c is connected to the die pad 32 via the connection portion 31. The leads 34a and 34b are not connected to the die pad 32, but are electrically connected to the wirings 14a and 14b. The lead 34a is electrically connected to a gate terminal of the electronic component 20a. The lead 34b is electrically connected to a source terminal of the electronic component 20a and an anode terminal of the electronic component 20b. Lead 34c is electrically connected to a drain terminal of electronic component 20a and a cathode terminal of electronic component 20b. Gate marks 29 for resin sealing are formed on the upper surface of the sealing resin 28. The resin sealing gate trace 29 is provided on the + Y side of the electronic components 20a and 20b. When the gate 51 is provided as shown in FIG. 11A, the resin sealing gate trace 29 is formed on the + Y side surface of the sealing resin 28. When the gate 51 is provided as shown in FIG. The sealing gate trace 29 is formed on the −Z surface of the sealing resin 28.

  If the insulating layer 10 moves with respect to the lead frame 30 when joining the pads 15a and 15b and the frame pads 35a and 35b, respectively, it causes a joint failure.

  According to the first embodiment, as shown in FIGS. 1D and 3B, electronic components 20 a and 20 b are mounted on the lower surface of the insulating layer 10, and penetrate the insulating layer 10 on the upper surface of the insulating layer 10. Wirings 14a and 14b connected to electronic components 20a and 20b are provided. As shown in FIG. 5, the ends of the leads 34a and 34b (that is, the frame pads 35a and 35b) are inserted into the openings 17a and 17b penetrating the insulating layer 10. As shown in FIG. 7B, with the ends of the leads 34a and 34b inserted into the openings 17a and 17b, the ends of the leads 34a and 34b are joined to the wirings 14a and 14b (that is, the pads 15a and 15b). . Thereby, the movement of the insulating layer 10 with respect to the leads 34a and 34b can be suppressed. Therefore, poor joining can be suppressed.

[Modification 1 of Embodiment 1]
FIG. 14A is a plan view of a module according to a first modification of the first embodiment, and FIG. 14B is a cross-sectional view taken along the line AA of FIG. As shown in FIGS. 14A and 14B, the sheet module 11 is mounted on the lead frame 30. The terminal 22 c on the lower surface of the electronic component 20 is joined to the die pad 32. Wirings 14a and 14b are electrically connected to terminals 22a and 22b via through holes 16a and 16b penetrating insulating layer 10 and bonding layer 12, respectively. The ends of the wires 14a and 14b are frame pads 35a and 35b. The upper surfaces of the frame pads 35a and 35b are joined to the lower surfaces of the frame pads 35a and 35b at the tips of the leads 34a and 34b. The lead 34c is connected to the die pad 32 via the connection portion 31. Thereby, the terminals 22a to 22c of the electronic component 20 are electrically connected to the leads 34a to 34c, respectively. As in the first modification of the first embodiment, the number of the electronic component 20 may be one. Other configurations are the same as those of the first embodiment, and a description thereof will be omitted.

[Modification 2 of Embodiment 1]
FIG. 15A is a cross-sectional view of a module according to a second modification of the first embodiment. As shown in FIG. 15A, the leads 34a and 34b are arranged below the insulating layer 10. Projections 35d are provided on the upper surfaces of the frame pads 35a and 35b. The protrusion 35d is inserted into a hole 16d passing through the insulating layer 10 and the bonding layer 12, and is bonded to the pads 15a and 15b. By making the tip of the projection 35d a cone, the projection 35d can pierce the insulating layer 10 and the bonding layer 12 and come into contact with the pads 15a and 15b. The other configuration is the same as that of the first modification of the first embodiment, and the description is omitted.

[Modification 3 of Embodiment 1]
FIGS. 15B and 15C are cross-sectional views of a module according to a third modification of the first embodiment. As shown in FIGS. 15B and 15C, the leads 34a and 34b are arranged below the insulating layer 10. The pad 15a and the frame pad 35a are electrically connected via the through hole 16e and a shim 37a. The pad 15b and the frame pad 35b are electrically connected via the through hole 16f and the shim 37b. The shims 37a and 37b are made of a metal material such as copper. The shims 37a and 37b may be separate members from the frame pads 35a and 35b, or may be members formed integrally with the frame pads 35a and 35b. The die pad 32 and the leads 34a to 34c are provided on the same plane. Other configurations are the same as those of the first modification of the first embodiment, and a description thereof will be omitted.

[Modification 4 of Embodiment 1]
FIG. 16A is a plan view of a module according to a fourth modification of the first embodiment, and FIG. 16B is a cross-sectional view taken along line AA of FIG. 16A. As shown in FIGS. 16A and 16B, the electronic components 20a and 20b have different thicknesses. A slit 41 is provided in the insulating layer 10 between the electronic components 20a and 20b, and the insulating layer 10 has a forked shape. Other configurations are the same as those of the first embodiment, and a description thereof will be omitted.

  When the slits 41 are not formed in the insulating layer 10 as in the first embodiment, when the electronic components 20 a and 20 b having different thicknesses are joined to the die pad 32, stress is applied to the insulating layer 10. In addition, a load is applied to the insulating layer 10 when the resin passes between the electronic components 20a and 20b. As a result, there is a possibility that the terminals 22a to 22e of the electronic components 20a and 20b and the wirings 14a and 14b or the die pad 32 may be separated.

  In the fourth modification of the first embodiment, the slit 41 is provided in the insulating layer 10 between the electronic components 20a and 20b. Thereby, even when the electronic components 20a and 20b having different thicknesses are joined to the die pad 32, the stress applied to the insulating layer 10 can be suppressed. Further, it is possible to suppress a load from being applied to the insulating layer 10 when the resin passes between the electronic components 20a and 20b having the same or different thicknesses. Therefore, it is possible to prevent the terminals 22a to 22e of the electronic components 20a and 20b from being separated from the wirings 14a and 14b or the die pad 32.

  The lead frame 30 as shown in FIGS. 4A to 4C has three leads on which transistors are mounted. The lower surface of the electronic component 20a is fixed to the die pad 32. The lead 34a (first lead) has a frame pad 35a (first frame pad) provided close to the die pad 32, and extends from the frame pad 35a to the side opposite to the die pad 32. The lead 34b (second lead) has a frame pad 35b (second frame pad) provided close to the die pad 32, and extends from the frame pad 35b to the side opposite to the die pad 32. The lead 34c (third lead) is provided between the leads 34a and 34b, and is formed integrally with the die pad 32. The extending directions of the leads 34a, 34b and 34c are substantially parallel to each other as long as manufacturing errors and the like are allowed.

  In order to mount the electronic components 20a and 20b on such a lead frame 30 and electrically connect the leads 34a to 34c to the electronic components 20a and 20b, bonding wires (thin metal wires) are used. However, the bonding wire has a shape that loops upward. Since the bonding wires are not exposed from the sealing resin 28, the thickness of the sealing resin 28 increases, and the size of the module increases.

  According to the first embodiment and its modification, the sheet module 11 as shown in FIG. 3B is formed. In the sheet module 11, the electronic component 20a is mounted on the lower surface of the insulating layer 10. The wiring 14a (first wiring) and the wiring 14b (second wiring) extend on the upper surface of the insulating layer 10. The wiring 14a has a pad 15a (first pad) at an end, and is electrically connected to the electronic component 20a via a through hole 16a (first through hole) penetrating the insulating layer 10. The wiring 14b has a pad 15b (second pad) at an end, and is electrically connected to the electronic component 20a via a through hole 16b (second through hole) penetrating the insulating layer 10. The pad 15a is fixed to the frame pad 35a, and the pad 15b is fixed to the frame pad 35b. Thus, the thickness of the sealing resin 28 can be reduced, and the module can be downsized.

  Further, a cut 40 is provided in the insulating layer 10 between the frame pad 35a and the lead 34c and / or between the frame pad 35b and the lead 34c. Thereby, as shown in FIGS. 10 to 11C, when the resin 27 is injected, the load applied to the insulating layer 10 in the space 55 can be suppressed.

  As shown in FIG. 14B of the first modification of the first embodiment, the upper surface of the pad 15a and the lower surface of the frame pad 35a are fixed, and the upper surface of the pad 15b and the lower surface of the frame pad 35b are fixed. Since the pads 15a and 15b are provided on the upper surface of the insulating layer 10, the pads 15a and 15b can be easily fixed to the frame pads 35a and 35b.

  As shown in FIGS. 15A to 15C of Modifications 2 and 3 of Embodiment 1, the lower surface of pad 15a and the upper surface of frame pad 35a are fixed, and the lower surface of pad 15b and the upper surface of frame pad 35b are fixed. It is fixed. Thus, the leads 34a and 34b can be arranged closer to the die pad 32 than the insulating layer 10. Therefore, the module can be downsized.

  As shown in FIGS. 15B and 15C of the third modification of the first embodiment, the lower surfaces of the pads 15a and 15b are fixed to the upper surface of the frame pad 35a via the shims 37a (first shims). Is fixed to the upper surface of the frame pad 35b via a shim 37b (second shim). Thereby, the bending between the leads 34a to 34c and the die pad 32 can be reduced.

  As in the first to third modifications of the first embodiment, the seat module 11 may include one electronic component 20. As in the first and the fourth modifications, the seat module 11 includes a plurality of electronic components. It may have components 20a and 20b.

  The electronic components 20, 20a and 20b are power semiconductor elements, and the insulating layer 10 is a polyimide sheet. Polyimide has heat resistance, and the lead frame 30 has high heat dissipation. Thereby, the current flowing through the power semiconductor element can be increased.

  As shown in FIG. 3 (b), electronic components 20a and 20b are mounted on the lower surface, and wirings 14a and 14b connected to the electronic components 20a and 20b are provided on the upper surface, and close to the ends of the wirings 14a and 14b. A sheet module 11 having an insulating layer 10 provided with openings 17a and 17b is prepared. As shown in FIGS. 5 to 7B, the frame pads 35a and 35b provided at the ends of the leads 34a and 34b are inserted into the openings 17a and 17b. As shown in FIGS. 8A and 9, in a state where frame pads 35a and 35b at the ends of leads 34a and 34b are inserted into openings 17a and 17b, frame pads 35a and 35b are electrically connected to wirings 14a and 14b. Connect to Thereby, the movement of the insulating layer 10 with respect to the leads 34a and 34b can be suppressed. Therefore, poor joining can be suppressed.

  The step of inserting the frame pads 35a and 35b at the ends of the leads 34a and 34b into the openings 17a and 17b includes forming the die frame 32 to which the lower surfaces of the electronic components 20a and 20b are fixed, and the lead frame 30 having the leads 34a and 34b. A step of preparing and fixing the sheet module 11 to the lead frame 30 with the frame pads 35a and 35b inserted into the openings 17a and 17b is included. As a result, poor joining can be suppressed.

  As shown in FIG. 3B, a sheet module 11 having an insulating layer 10 in which a cut 40 is provided between the pad 15a of the wiring 14a and the pad 15b of the wiring 14b is prepared. As shown in FIGS. 5 to 7B, the seat module 11 is fixed to the lead frame 30. As shown in FIGS. 10 to 11C, the sheet module 11 and the lead frame 30 are resin-sealed. In the resin sealing step, the molten resin 27 passes through the cuts 40. Thereby, the load on the insulating layer 10 due to the resin 27 can be suppressed.

  As shown in FIGS. 11A and 11B, in the resin sealing step, the resin 27 is melted so that the molten resin 27 flows in a direction parallel to the upper surface of the die pad 32 and / or in a direction from the lower surface of the die pad 32 to the upper surface. An upper die 50 and a lower die 52 (die) provided with a gate 51 for injecting 27 are used. This can prevent the pads 15a and 15b from being peeled off from the frame pads 35a and 35b.

  As shown in FIGS. 16A and 16B of the fourth modification of the first embodiment, in the sheet module 11, the electronic component 20a (first electronic component) and the electronic component 20b (second component) are provided on the lower surface of the insulating layer 10. Electronic components). The wiring 14a is electrically connected to the electronic component 20a via the through hole 16a, and the wiring 14b is electrically connected to the electronic component 20a and / or 20b via the through hole 16b and / or 16c. A slit 41 is provided in the insulating layer 10 between such electronic components 20a and 20b. Thereby, stress can be suppressed from being applied to the insulating layer 10. Therefore, it is possible to prevent the electronic components 20a and 20b from being separated from the wirings 14a and 14b or the die pad 32.

[Modification 5 of Embodiment 1]
FIG. 17A is a plan view of a seat module according to a fifth modification of the first embodiment. As shown in FIG. 17A, in the sheet module 11 according to the fifth modification of the first embodiment, the metal layers 18a and 18b are provided at the tips of the pads 15a and 15b so as to surround the openings 17a and 17b, respectively. I have. The metal layers 18a and 18b are made of the same material as the pads 15a and 15b, and are formed simultaneously with the wirings 14a and 14b. Thus, the pad 15a and the metal layer 18a are connected and provided integrally, and the pad 15b and the metal layer 18b are connected and provided integrally. Other configurations are the same as those in FIG. 3B of the first embodiment, and a description thereof will be omitted.

  FIG. 17B is a plan view illustrating the module manufacturing method in the fifth modification of the first embodiment. As shown in FIG. 17B, similarly to FIGS. 6 to 8B, frame pads 35a and 35b are inserted into openings 17a and 17b, respectively, and pads 15a and 15b and frame pads 35a and 35b are respectively connected. Join. After that, the four regions 42 of the insulating layer 10 in FIG. 17A are cut using a laser beam, the inside of a die-cutting device, a cutter, or the like. As a result, a cut 40 is formed between the pads 15a and 15b. Metal layers 18a and 18b having openings 17a and 17b remain at the tips of pads 15a and 15b, respectively, and frame pads 35a and 35b are inserted into openings 17a and 17b, respectively. Other configurations are the same as those of the first embodiment shown in FIG.

[Modification 6 of Embodiment 1]
FIG. 18A is a plan view of the seat module according to the sixth modification of the first embodiment. As shown in FIG. 18A, in the sheet module 11 according to the sixth modification of the first embodiment, two regions 42 are provided substantially in the same straight line as the sides of the opening 17c in the Y direction. The other configuration is the same as that of FIG. 17A of the fifth modification of the first embodiment, and the description is omitted.

  FIG. 18B is a plan view illustrating the method for manufacturing the module in Modification 6 of Example 1. As shown in FIG. 18B, the two regions 42 of the insulating layer 10 in FIG. 18A are cut using a laser beam, the inside of a die-cutting device, a cutter, or the like. As a result, the cuts 40 are not formed, and the pads 15a and 15b and the metal layers 18a and 18b extend from the insulating layer 10. Frame pads 35a and 35b are inserted into openings 17a and 17b of metal layers 18a and 18b, respectively. The other configuration is the same as that of FIG. 17B of the fifth modification of the first embodiment, and the description is omitted.

[Variation 7 of Embodiment 1]
FIG. 19A is a plan view of a seat module according to a seventh modification of the first embodiment. As shown in FIG. 19A, in the sheet module 11 according to the seventh modification of the first embodiment, the pads 15a and 15b and the metal layers 18a and 18b are separated from each other via a space 18c. The pads 15a and 15b and the metal layers 18a and 18b may be made of the same material or different materials. The other configuration is the same as that of FIG. 17A of the fifth modification of the first embodiment, and the description is omitted.

  FIG. 19B is a plan view illustrating the method for manufacturing the module in Modification 7 of Example 1. As shown in FIG. 19B, the four regions 42 of the insulating layer 10 in FIG. 19A are cut by using a laser beam, the inside of a die-cutting device, a cutter, or the like. As a result, a cut 40 is formed between the pads 15a and 15b. Metal layers 18a and 18b are joined to the tips of pads 15a and 15b, respectively. As a result, the metal layers 18a and 18b remain. Frame pads 35a and 35b are inserted into openings 17a and 17b of metal layers 18a and 18b, respectively. The other configuration is the same as that of FIG. 17B of the fifth modification of the first embodiment, and the description is omitted.

[Eighth Modification of First Embodiment]
FIG. 20A is a plan view of the seat module according to the eighth modification of the first embodiment. As shown in FIG. 20A, in the sheet module 11 according to the eighth modification of the first embodiment, two regions 42 are provided substantially in the same straight line as the Y-direction side of the opening 17c. The other configuration is the same as that of FIG. 19A of the sixth modification of the first embodiment, and the description is omitted.

  FIG. 20B is a plan view illustrating the manufacturing method of the module according to the eighth modification of the first embodiment. As shown in FIG. 20B, the two regions 42 of the insulating layer 10 in FIG. 20A are cut using a laser beam, the inside of a die-cutting apparatus, a cutter, or the like. As a result, the cuts 40 are not formed, and the pads 15a and 15b extend from the insulating layer 10. Metal layers 18a and 18b are separated from pads 15a and 15b, respectively. The other configuration is the same as that of FIG. 19B of the sixth modification of the first embodiment, and the description is omitted.

  As in Modifications 5 to 8 of Embodiment 1, when inserting frame pads 35a and 35b into openings 17a and 17b, respectively, metal layers 18a and 18b are provided in insulating layer 10 so as to surround openings 17a and 17b, respectively. Have been. That is, metal layers 18a and 18b are provided in insulating layer 10 so as to surround openings 17a and 17b close to pads 15a and 15b. Thus, even if the insulating layer 10 has flexibility, the metal layers 18a and 18b reinforce the insulating layer 10. This facilitates insertion of the frame pads 35a and 35b into the openings 17a and 17b.

  The width of the metal layers 18a and 18b is preferably smaller than the minimum width of the openings 17a and 17b. As a result, the size of the seat module can be reduced. Since the metal layers 18a and 18b reinforce the insulating layer 10, the distance between the metal layers 18a and 18b and the openings 17a and 17b is preferably smaller than the minimum width of the openings 17a and 17b. The width of the space 18c between the metal layers 18a and 18b and the pads 15a and 15b is preferably smaller than the minimum width of the openings 17a and 17b.

  In Modifications 5 and 6 of Embodiment 1, pads 15a and 15b are connected to metal layers 18a and 18b. Thereby, in addition to the pads 15a and 15b, a part of the metal layers 18a and 18b is bonded to the frame pads 35a and 35b, respectively, so that bonding strength can be increased.

  In the modified examples 7 and 8 of the first embodiment, the pads 15a and 15b are separated from the metal layers 18a and 18b, respectively. Thereby, when frame pads 35a and 35b are inserted into openings 17a and 17b, respectively, metal layers 18a and 18b easily move relative to pads 15a and 15b, respectively. Thus, when the frame pads 35a and 35b are inserted into the openings 17a and 17b, respectively, the openings 17a and 17b move freely, so that it becomes easy to insert the frame pads 35a and 35b into the openings 17a and 17b, respectively.

  In the modified examples 5 and 7 of the first embodiment, the widths of the metal layers 18a and 18b in the region 42 are small. In the modified examples 6 and 8 of the first embodiment, the width of the pads 15a and 15b in the region 42 is large. If the metal layer is bonded to the region where the insulating layer 10 is to be cut, it becomes difficult to cut the insulating layer 10. Therefore, in the modified examples 5 and 7 of the first embodiment, the cutting of the insulating layer 10 in the region 42 is easier than in the modified examples 6 and 8 of the first embodiment.

  In the modified examples 6 and 8 of the first embodiment, the insulating layer 10 is not provided at the tips of the pads 15a and 15b. Therefore, as shown in FIG. 11A to FIG. 11B, it is possible to suppress the flow of the resin from being hindered by the insulating layer 10 during the resin sealing. In the modified example 8 of the first embodiment, the metal layers 18a and 18b are not provided at the tips of the pads 15a and 15b. Therefore, it is possible to suppress the flow of the resin from being hindered by the metal layers 18a and 18b during the resin sealing.

  In the first embodiment and its modifications, a power module on which a power semiconductor element is mounted has been described as an example, but a module on which electronic components other than the power semiconductor element are mounted may be used.

  FIG. 21A is a plan view of the seat module according to the second embodiment, and FIG. 21B is an enlarged view around the electronic component of FIG. FIG. 22 is a cross-sectional view taken along the line AA of FIG. Of the planar direction of the insulating layer 110, the direction from the terminal 122a to the terminal 122b is the X direction, the direction orthogonal to the X direction is the Y direction, and the thickness direction of the insulating layer 110 is the Z direction. FIGS. 21A and 21B illustrate the insulating layer 110, the wirings 114a and 114b, the openings 115, the through holes 116a to 116c, the electronic components 120a and 120b, and the terminals 122a and 122b. 21 (a) and 21 (b), the numbers of the through holes 116a, 116b and 116c are shown as one, sixteen and one, respectively. In FIG. 22, the number of the through holes 116b is shown as two. Although shown, the number of through holes 116a to 116c can be set arbitrarily. For example, the number of through holes 116a and 116c may be two or more, and the number of through holes 116b may be one.

  As shown in FIGS. 21A to 22, a bonding layer 112 is provided on the lower surface of the insulating layer 110. The insulating layer 110 is a flexible resin insulating layer such as a polyimide layer. Electronic components 120a and 120b are mounted on the lower surface of bonding layer 112. The bonding layer 112 is a resin adhesive such as an epoxy resin adhesive, and bonds the insulating layer 110 to the electronic components 120a and 120b. The thickness of the insulating layer 110 is, for example, 20 μm to 50 μm. The thickness of the bonding layer 112 is, for example, 5 μm to 20 μm, and is smaller than the thickness of the insulating layer 110.

  The electronic components 120a and 120b are power devices, for example, transistors or diodes such as IGBTs (Insulated Gate Bipolar Transistors), bipolar transistors or FETs (Field Effect Transistors). A semiconductor such as Si, GaN, or SiC is used for the transistor or the diode. Electronic components 120a and 120b are mounted on insulating layer 110 in a bare chip state. The electronic components 120a and 120b may be packages in which bare chips are sealed and mounted. In the examples of FIGS. 21A and 22, the electronic component 120a is a bare chip of a vertical SiC transistor in which a current flows between the upper surface and the lower surface. The electronic component 120b is a vertical diode in which a current flows between the upper surface and the lower surface.

  Terminals 122a and 122b are provided on the upper surface of electronic component 120a, and terminal 122c is provided on the lower surface. Terminals 122a, 122b, and 122c are a gate terminal, a source terminal, and a drain terminal, respectively. The terminal 122d is provided on the upper surface of the electronic component 120b, and the terminal 122e is provided on the lower surface. Terminals 122d and 122e are an anode terminal and a cathode terminal, respectively. The terminals 122a to 122e are formed in advance in a process of manufacturing the electronic components 120a and 120b, and are, for example, a metal layer such as copper, gold, or aluminum.

  Through holes 116a to 116c penetrating the insulating layer 110 and the bonding layer 112 are provided. One through hole 116a is provided, and six through holes 116b are provided in each of the two terminals 122b. A large current flows through the source terminal and the drain terminal. Since the gate terminal is a control terminal, no large current flows. Therefore, the terminal 122a is smaller than the terminal 122b. The total area of the through holes 116a is smaller than the total area of the through holes 116b. The size of the through holes 116a to 116c is, for example, 30 μm to 500 μm.

  Wirings 114 a and 114 b are provided on the inner surfaces of the through holes 116 a to 116 c and on the insulating layer 110. The wiring 114a is electrically connected to the terminal 122a (gate terminal) via the through hole 116a. The wiring 114b is electrically connected to the terminal 122b (source terminal) via the through hole 116b, and is electrically connected to the terminal 122d (anode terminal) via the through hole 116c. The wirings 114a and 114b are conductive patterns made of a metal layer such as a copper layer. The thickness of the wirings 114a and 114b is, for example, 50 μm to 300 μm because a large current flows, and is larger than the thickness of the insulating layer 110. The thickness of the wirings 114a and 114b may be as thin as about 10 μm. Two pads 113a and 113b are provided close to the lower side of the insulating layer 110, and the wirings 114a and 114b are connected to the upper side from the pads 113a (gate pad GP) and 113b (source pad SP). Has been extended. A portion connected to the gate terminal and the source terminal is called a pad. Here, the entire conductive pattern including the pad is called a wiring.

  A metal layer 126 is provided below the electronic components 120a and 120b. The metal layer 126 is electrically connected to the terminal 122c (drain terminal) and the terminal 122e (cathode terminal) via the bonding layer 124. The bonding layer 124 is a conductive bonding layer such as a metal paste such as a copper paste or a silver paste or a solder. The metal layer 126 is, for example, a copper layer, a metal layer mainly composed of aluminum or gold, and is a die pad called an island to which a transistor chip in a lead frame employed in a transistor package is fixed. A ground potential is supplied to the metal layer 126. Note that a specific example of the metal layer 126 will be described later. Further, a sheet in which the wirings 114a and 114b and the electronic components 120a and 120b are provided on the insulating layer 110 before the sealing resin is provided is referred to as a sheet module 111.

  A sealing resin 128 is provided on the metal layer 126 so as to cover the electronic components 120a and 120b, the insulating layer 110, and the wirings 114a and 114b. The sealing resin 128 is a thermosetting resin or a thermoplastic resin, for example, an epoxy resin or a phenol resin.

  An opening 115 penetrating through the insulating layer 110 and the bonding layer 112 is provided between the terminals 122a and 122b. The opening 115 has a slit shape. The width of the opening 115 in the X direction is, for example, 5 μm to 50 μm, and the length in the Y direction is, for example, 100 μm or more.

  The through hole 116a has a small area where the terminal 122a contacts the wiring 114a. Therefore, a load is applied to the through-hole 116a due to a difference in thermal expansion coefficient between the insulating layer 110, the wiring 114a, the metal layer 126, and the like, and cracks and / or film peeling of the connection portion occur. Therefore, in order to suppress these, by providing the opening 115 (slit), the stress can be reduced.

  FIGS. 23A to 24B are cross-sectional views illustrating a module manufacturing method according to the second embodiment. As shown in FIG. 23A, a bonding layer 112 is applied to the lower surface of the insulating layer 110. The bonding layer 112 is applied by, for example, a spin coating method, a spray coating method, or an inkjet method. Note that the insulating layer 110 in which the bonding layer 112 is formed in advance may be prepared. Further, the bonding layer 112 may be partially formed in a region where the electronic components 120a and 120b are mounted, instead of the entire region of the insulating layer 110.

  As shown in FIG. 23B, through holes 116a to 116c penetrating the insulating layer 110 and the bonding layer 112 are formed. The through holes 116a to 116c are formed by irradiating, for example, ultraviolet, visible or infrared laser light 117.

  As shown in FIG. 23C, the electronic components 120a and 120b are temporarily bonded to the lower surface of the bonding layer 112. Thereafter, the heat treatment is performed to cure the bonding layer 112 and bond the electronic components 120a and 120b to the insulating layer 110. Thereby, electronic components 120a and 120b are fixed to insulating layer 110. The heat treatment is performed, for example, at a temperature of 200 ° C to 300 ° C. In this state, terminals 122a, 122b and 122d of electronic components 120a and 120b are exposed to through holes 116a, 116b and 116c, respectively. 23B, the electronic components 120a and 120b may be bonded and fixed to the insulating layer 110, and then the through holes 116a to 116c may be opened. However, in this case, a thermal load by a laser is applied to the electronic components 120a and 120b. Therefore, it is preferable to form the through holes 116a to 116c before mounting the electronic components 120a and 120b on the insulating layer 110.

  As shown in FIG. 23D, wirings 114a and 114b are formed on the upper surface of the insulating layer 110 and on the inner surfaces of the through holes 116a to 116c. A method for forming the wirings 114a and 114b will be described. A seed layer is formed on the upper surface of the insulating layer 110 and on the inner surfaces of the through holes 116a and 116b. The seed layer is formed using, for example, a sputtering method. The seed layer is, for example, a metal layer such as a titanium layer and a copper layer from the insulating layer 110 side. Then, a plating layer is formed on the upper surface of the formed seed layer by an electrolytic plating method. The plating layer is, for example, a metal layer such as a copper layer. The plating layer is formed by using, for example, an electrolytic plating method by supplying a current to the seed layer. Wirings 114a and 114b are formed by the seed layer and the plating layer. After the plating layer is formed over the entire surface of the insulating layer 110, the plating layer may be patterned using a photolithography method and an etching method. Alternatively, a photoresist having an opening in a region where the wirings 114a and 114b are formed is formed in the insulating layer 110 by a photolithography method. Thereafter, a plating layer may be formed in the opening of the photoresist.

  As shown in FIG. 24A, an opening 115 penetrating through the insulating layer 110 and the bonding layer 112 is formed. The opening 115 is formed by, for example, irradiating an ultraviolet, visible, or infrared laser beam 113. The opening 115 may be formed simultaneously with the formation of the through holes 116a to 116c in FIG. If the opening 115 is formed after the electronic components 120a and 120b are mounted on the insulating layer 110, heat is applied to the electronic components 120a and 120b, and the electronic components 120a and 120b may deteriorate. When the opening 115 is formed simultaneously with FIG. 23B, the deterioration of the electronic components 120a and 120b can be suppressed. When the opening 115 is formed in FIG. 23B, a plating solution may enter the insulating layer 110 into the electronic components 120a and 120b through the opening 115 in FIG. 23C, and a plating layer may be formed. . To suppress such a problem, the opening 115 may be covered with a photoresist or a film before forming the wirings 114a and 114b. The opening 115 may be formed by making a cut with a cutter or the like.

  As shown in FIG. 24B, the terminals 122c and 122e are joined to the metal layer 126. As a bonding method, a bonding layer 124 is applied to the lower surfaces of the terminals 122c and 122e or the upper surface of the metal layer 126. The bonding layer 124 is solder or a conductive paste, and is formed by using, for example, a printing method, a spin coating method, a spray coating method, or an inkjet method. Subsequently, the bonding layer 124 is brought into contact with the terminals 122c and 122e and the metal layer 126 and heat-treated, whereby the bonding layer 124 is baked and the terminals 122c and 122e are bonded to the metal layer 126. Thereby, the terminals 122c and 122e and the metal layer 126 are thermally and mechanically and electrically joined and fixed. The heat treatment temperature is, for example, about 180 ° C. to 300 ° C., and is a temperature at which the insulating layer 110 and the bonding layer 112 are not softened. After that, the sealing resin 128 may be formed. Thus, the module according to the second embodiment is completed.

  FIGS. 25A and 25B are cross-sectional views of the module according to Comparative Example 1. FIG. As shown in FIG. 25A, in Comparative Example 1, the opening 115 is not provided in the insulating layer 110 and the bonding layer 112. As shown in FIG. 25B, when a large current flows through the electronic component 120a, the electronic components 120a and 120b and the wirings 114a and 114b generate heat. At this time, warpage occurs as a whole due to the difference in the coefficient of thermal expansion of each member. In Comparative Example 1, since the linear thermal expansion coefficients of the insulating layer 110 and the bonding layer 112 such as resin are larger than the linear thermal expansion coefficients of the wirings 114a and 114b such as a copper layer, the insulating layer 110 and the bonding layer 112 It becomes concave and warps so that the lower surface becomes convex. When the temperature of the bonding layer 112 made of resin increases, the bonding force of the bonding layer 112 decreases. In particular, since the contact area between the terminal 122a and the wiring 114a is small, the bonding force is weak, and the wiring 114a may be peeled off from the terminal 122a as shown at a point 144, or a crack may occur in the wiring 114a in the through hole 116a. There is. As a result, the terminal 122a and the wiring 114a are disconnected or have high resistance, which may cause a contact failure.

  According to the second embodiment, the electronic component 120a (first electronic component) has the terminal 122a (first terminal) and the terminal 122b (second terminal) on the upper surface, and is provided on the lower surface of the insulating layer 110 (resin insulating layer). It is installed. The bonding layer 112 (resin bonding layer) bonds the lower surface of the insulating layer 110 and the upper surface of the electronic component 120a. The wiring 114a (first wiring) is provided on the inner surface of one or a plurality of through holes 116a (first through holes) penetrating the insulating layer 110 and the bonding layer 112 and on the upper surface of the insulating layer 110, and is connected to the terminal 122a. The wiring 114b (second wiring) is provided on the inner surface of one or a plurality of through holes 116b (second through holes) penetrating the insulating layer 110 and the bonding layer 112 and on the upper surface of the insulating layer 110, and is connected to the terminal 122b. No metal layer such as a terminal and / or a wiring is provided between the terminals 122a and 122b and between the wirings 114a and 114b.

  In such a module, an opening 115 penetrating the insulating layer 110 and the bonding layer 112 is provided between the terminals 122a and 122b and between the wirings 114a and 114b. Thereby, the stress of the insulating layer 110 and the bonding layer 112 in the through hole 116a is reduced. Accordingly, it is possible to prevent the wiring 114a from being peeled off from the terminal 122a as in Comparative Example 1.

  The opening 115 is provided with a slight length between the through hole 116a and the wiring 114b where the distance between the through hole 116a and the wiring 114b is shortest. Thereby, the stress of the insulating layer 110 and the bonding layer 112 in the through hole 116a can be further reduced.

  The length of the opening 115 in the Y direction is larger than the length of at least one of the through holes 116a and 116b in the Y direction. That is, as shown in FIG. 21B, the + Y end 141a of the opening 115 is located on the + Y side (outside) of the + Y end 140a (outermost end) of the through hole 116a, and the -Y end 141b of the opening 115 is The through hole 116a is located on the −Y side (outside) from the −Y end 140b (outermost end). Thereby, the stress applied to the through hole 116a can be reduced. When there are a plurality of through holes 116a, the + Y end 141a of the opening 115 is located on the + Y side of the + Y end of the through hole 116a closest to the + Y side of the plurality of through holes 116a, and the -Y end 141b of the opening 115 is It is preferable that the plurality of through holes 116a be located on the -Y side from the -Y end of the most -Y side through hole 116a.

  The opening 115 overlaps with the electronic component 120a and does not overlap with a region outside the electronic component 120a. That is, the + Y end 141a and the −Y end 141b of the opening 115 overlap the electronic component 120a. Accordingly, since the bonding between the electronic component 120a and the insulating layer 110 by the bonding layer 112 can be ensured, a decrease in the strength of the insulating layer 110 due to the opening 115 can be suppressed, and the manufacturing process of FIGS. Breakage of the insulating layer 110 due to handling in the inside can be suppressed. Further, in order to prevent the insulating layer 110 from peeling off, a distance La from the + Y end 141a of the opening 115 to the + Y side of the electronic component 120a, and a -Y side of the electronic component 120a from the -Y end 141b of the opening 115. It is preferable that the distances Lb to each be 0.1 mm or more.

  The electronic component 120a is a transistor, the terminal 122a is a control terminal of the transistor, and the terminal 122b is a terminal (for example, a source terminal) other than the control terminal of the transistor. No large current flows through the control terminal of the transistor. Therefore, the total joint area where one or more through holes 116a are connected to terminal 122a is smaller than the total area where one or more through holes 116b is connected to terminal 122b. Therefore, stress is easily applied to the through-hole 116a, and the wiring 114a is likely to be peeled off from the terminal 122a, and a defect such as a crack in the through-hole 116a is likely to occur. Therefore, it is preferable to provide the opening 115. The control terminal is a gate terminal or a base terminal, and terminals other than the control terminal are a source terminal, an emitter terminal, a drain terminal, or a collector terminal.

  The thickness of each of the wirings 114a and 114b is preferably larger than the total thickness of the insulating layer 110 and the bonding layer 112. Thereby, the heat radiation from the electronic component 120a can be improved. Further, since the temperature rise of the insulating layer 110, the bonding layer 112, and the like can be suppressed, the current supplied to the electronic component 120a can be increased. However, thermal stress between the wirings 114a and 114b, the insulating layer 110, and the bonding layer 112 increases. Therefore, the stress caused by the thick wirings 114a and 114b can be reduced by providing the opening 115. The thickness of the wirings 114a and 114b is preferably 1.5 times or more the total thickness of the insulating layer 110 and the bonding layer 112, and more preferably 2 times or more.

  The electronic component 120b (second electronic component) is, for example, a diode, has a terminal 122d (third terminal) on the upper surface, and is mounted on the lower surface of the insulating layer 110. The wiring 114b (at least one of the first wiring and the second wiring) connects the terminal 122d to the terminal 122b (at least one of the corresponding first and second terminals). By using the thick wiring 114b, the current capacity between the terminal 122b and the terminal 122d can be increased.

[Modification 1 of Embodiment 2]
FIGS. 26A and 26B are plan views of modules according to Modifications 1 and 2 of the second embodiment. FIG. 26B is an enlarged view of the vicinity of the electronic component 120a. As shown in FIG. 26A, in the first modification of the second embodiment, the opening 115 passes through the insulating layer 110 between the region where the wiring 114a is provided and the region where the wiring 114b is provided, and The insulating layer 110 is provided to extend from the upper end to the lower end of the layer 110 and divide the insulating layer 110 into two regions. When the opening 115 divides the insulating layer 110, the stress of the insulating layer 110 and the bonding layer 112 applied to the through hole 116a can be further reduced. Since the strength of the insulating layer 110 is reduced, the handling property during the manufacturing process is deteriorated. In this case, after fixing the electronic components 120a and 120b to the insulating layer 110 where the wirings 114a and 114b are formed, the opening 115 may be formed using laser light or the like.

[Modification 2 of Embodiment 2]
As shown in FIG. 26B, in the second modification of the second embodiment, the + Y end 141a of the opening 115 is located on the + Y side of the + Y side of the electronic component 120a, and the −Y end 141b of the opening 115 is The component 120a is located on the −Y side from the −Y side. That is, the opening 115 is provided from the + Y end to the −Y end of the electronic component 120a and is provided to be longer than the length of the electronic component 120a in the Y direction, and separates the wiring 114a and the wiring 114b in the electronic component 120a. It is provided to be. However, the opening 115 does not divide the insulating layer 110. Since the opening 115 is larger than the electronic component 120a, the stress of the insulating layer 110 and the bonding layer 112 applied to the through hole 116a can be further reduced. When the opening 115 does not divide the insulating layer 110, the handleability during the manufacturing process can be improved.

  According to the first and second modifications of the second embodiment, the region where the opening 115 is projected on the electronic component 120a divides the electronic component 120a into two regions. Thereby, the stress of the insulating layer 110 and the bonding layer 112 applied to the through hole 116a can be further reduced.

[Modification 3 of Embodiment 2]
FIG. 27 is a cross-sectional view of a module according to a third modification of the second embodiment. As shown in FIG. 27, electronic components 120a and 120b are mounted on insulating layer 110 using bonding layer 112. The electronic component 120a is, for example, a horizontal GaN transistor, and the electronic component 120b is a horizontal diode. In the case of this lateral GaN transistor, the gate terminal, the source terminal, and the drain terminal are all provided on the lower surface of the electronic component 120a. In FIG. 27, terminals 122a and 122b are provided on the lower surface of electronic component 120a. The terminals 122a and 122b are a gate terminal and a source terminal, respectively, and a drain terminal is provided at a position on the lower surface of the electronic component 120a (not shown). Terminals 122d and 122e are provided on the lower surface of the electronic component 120b, which is a horizontal diode. Terminals 122d and 122e are a cathode terminal and an anode terminal.

  Wirings 114a to 114c are provided on the lower surface of the insulating layer 110. The wiring 114a is connected to the terminal 122a (gate terminal) of the electronic component 120a via the through hole 116a. The wiring 114b is connected to the terminal 122b (source terminal) of the electronic component 120a via the through hole 116b, and connected to the terminal 122d (anode terminal) of the electronic component 120b (diode) via the through hole 116c. The wiring 114c is connected to the terminal 122e (cathode terminal) of the electronic component 120b via the through hole 116d. Openings 115 are provided between the wirings 114a and 114b and between the wirings 114b and 114c so as to remove the insulating layer 110 and the bonding layer 112.

  The upper surfaces (back surfaces of the bare chips) of electronic components 120a and 120b are joined to the lower surface of metal layer 132 by joining layer 124. Metal layers 132 and 134 are provided on the lower surface and the upper surface of the insulating substrate 130. The insulating substrate 130 is, for example, a ceramic substrate, and the metal layers 132 and 134 are, for example, copper layers. The insulating substrate 130 and the metal layers 132 and 134 function as sheet sinks that emit heat of the electronic components 120a and 120b. The bonding layer 124 is a conductive adhesive such as a resin adhesive or a metal paste. A space between the insulating layer 110 and the insulating substrate 130 may be filled with a sealing member 138. The sealing member 138 is an insulator such as a resin, for example, and seals the electronic components 120a and 120b. The other configuration is the same as that of the second embodiment, and the description is omitted. As described above, even in a module in which the insulating substrate 130 that is a ceramic substrate is disposed on the back surface of the electronic component 120a that is a bare chip, for example, the opening 115 shown in FIG. 21A and FIG. Since it is provided between the hole 116a (through hole for a gate terminal) and the terminal 122b (source terminal), the reliability of the contact of the gate terminal in the through hole 116a is improved.

[Modification 4 of Embodiment 2]
FIG. 28 is a cross-sectional view of a module according to Modification 4 of Example 2. As shown in FIG. 28, electronic components 120a to 120d are mounted on an insulating layer 110 using a bonding layer 112. The electronic component 120a is, for example, a lateral GaN transistor. The electronic component 120b is, for example, a diode. The electronic component 120c is, for example, a discrete chip resistor, chip capacitor, and / or chip inductor. The wiring 114 is connected to the electrodes 122 and 123 of the electronic components 120a to 120d via the through holes 116. In the electronic component 120c, the electrodes 123 are provided on five surfaces, and the wirings 114 and 114c are connected to the electrodes 123. The electronic component 120d is, for example, an integrated circuit, and is a driver for driving a power element such as a transistor. A sealing member 138 is provided on the insulating layer 110 so as to cover the electronic components 120a to 120d. The sealing member 138 is an insulator such as a resin, for example, and seals the electronic components 120a to 120d. The other configuration is the same as that of the third modification of the second embodiment, and the description is omitted.

  In the third modification of the second embodiment, the heat dissipation of the electronic components 120a and 120b can be improved by providing the insulating substrate 130 and the metal layers 132 and 134. Therefore, the power handled by electronic components 120a and 120b can be set to 1 KW or more.

  In the fourth modification of the second embodiment, a module having many electronic components 120a to 120d can be realized.

[Modification 5 of Embodiment 2]
FIG. 29 is a plan view of a seat module according to a fifth modification of the second embodiment. As shown in FIG. 29, the electronic component 120a (for example, a transistor) is mounted on the insulating layer 110, and the electronic component 120b (for example, a diode) is not mounted. The other configuration is the same as that of the second embodiment, and the description is omitted. As in Modification Example 5 of Embodiment 2, only one electronic component 120a may be mounted on the insulating layer 110.

[Modification 6 of Embodiment 2]
The sixth modification of the second embodiment is an example in which the sheet module 111 is mounted on an insertion type package (for example, a TO (Transistor Outline) package) for inserting leads into holes in a printed circuit board.

  30A is a plan view of a lead frame according to a sixth modification of the second embodiment, and FIGS. 30B and 30C are cross-sectional views taken along line AA and line BB of FIG. 30A. It is. As shown in FIGS. 30A to 30C, the lead frame 150 is mainly made of copper, and has a die pad 152 (also referred to as an island) and leads 154a to 154c. The die pad 152 is a metal plate having a flat ± Z plane. A lead 154c extending from the die pad 152 in the -Y direction is a drain lead DL. The lead 154a is connected to the die pad 152 by a connection 153. Leads 154a and 154b are provided independently of the die pad 152 in the ± X direction of the leads 154c.

  The + Y ends of the leads 154a and 154b are pads 155a and 155b. Of the ± Z planes of the pads 155a and 155b, the −Z plane to which the pads 113a and 113b connect as described later is flat. When pads 113a and 113b are connected to the + Z faces of pads 155a and 155b, the + Z faces of pads 155a and 155b are made flat. The leads 154a and 154b are a gate lead GL and a source lead SL, respectively. When the transistor is a bipolar transistor or IGBT, the leads 154a, 154b and 154c are a base lead BL, an emitter lead EL and a collector lead EL, respectively.

  A region 152a of the die pad 152 is a mounting region for electronic components 120a and 120b such as a bare chip. The region 152b may be a mounting region, but may be a heat dissipation and heat sink region. Die pad 152 is thicker than leads 154a-154c. The leads 154a to 154c are provided on the + Z side of the die pad 152 from the + Z surface.

  FIG. 31 is a plan view of a module according to a modification 6 of the second embodiment. As shown in FIG. 31, the sheet module 111 is mounted on the lead frame 150. The -Z surfaces of electronic components 120a and 120b are fixed to the + Z surface of die pad 152 using, for example, a brazing material or a conductive paste. The + Z faces of the pads 113a and 113b (see FIG. 29) of the sheet module 111 are fixed to the −Z faces of the pads 155a and 155b, respectively, using solder, conductive paste, or spot welding. It is preferable to use solder or conductive paste for this fixing. The lead frame 150 other than the sheet module 111 and the leads 154a to 154c may be sealed with a sealing resin.

  Terminal 122c (drain terminal) of electronic component 120a and terminal 122e (cathode terminal) of electronic component 120b are electrically connected to lead 154c (drain lead DL) via die pad 152 and connection portion 153. Terminal 122a (gate terminal) of electronic component 120a is electrically connected to lead 154a (gate lead GL) via wiring 114a, pad 113a (gate pad GP) and pad 155a. Terminal 122b (source terminal) of electronic component 120a is electrically connected to lead 154b (source lead SL) via wiring 114b, pad 113b (source pad SP), and pad 155b.

[Variation 7 of Embodiment 2]
The seventh modification of the second embodiment is an example in which the sheet module is mounted on a surface mounting type package (for example, SOP (Small Outline Package)) in which the leads are bent and the leads are fixed to the surface of the printed circuit board.

  FIG. 32A is a plan view of a seat module according to a seventh modification of the second embodiment, and FIG. 32B is a cross-sectional view taken along line AA of FIG. As shown in FIGS. 32A and 32B, in the sheet module 111, the electronic component 120a is mounted on the lower surface of the insulating layer 110 by the bonding layer 112. Wirings 114 a and 114 b are provided on the upper surface of the insulating layer 110. Wirings 114a and 114b are connected to terminals 122a and 122b via through holes 116a and 116b, respectively. In FIG. 32B, the plurality of through holes 116b are illustrated as one.

  An L-shaped opening 115 is provided in the insulating layer 110 between the wirings 114a and 114b. The wirings 114a and 114b extend in the + X direction. The tips of the wires 114a and 114b are pads 113a and 113b. The pads 113a and 113b are provided with through holes 116e and 116f penetrating the insulating layer 110 and the bonding layer 112, respectively.

  FIG. 33A is a plan view of a lead frame according to a seventh modification of the second embodiment, and FIG. 33B is a cross-sectional view taken along a line AA in FIG. The lead frame 150 has a die pad 152 and leads 154a to 154c. The lead 154c is pulled out from the die pad 152 in the -X direction, refracted in the -Z direction, and further refracted in the -X direction.

  Leads 154a and 154b are separate from die pad 152. The -X ends of the leads 154a and 154b are pads 155a and 155b. Pads 155a and 155b are thicker than die pad 152. The leads 154a and 154b extend from the pads 155a and 155b in the + X direction, refract in the -Z direction, and further refract in the + X direction. The leads 154a and 154b are each divided into a plurality of combs because a large current flows. The -Z surfaces at the ends of the leads 154a to 154c are mounted on the surface of the printed circuit board.

  FIG. 34A is a plan view of a module according to a modification 7 of the second embodiment, and FIG. 34B is a cross-sectional view taken along a line AA in FIG. As shown in FIGS. 34A and 34B, the sheet module 111 is mounted on the lead frame 150. Terminal 122c of electronic component 120a is bonded to die pad 152 via bonding layer 124a. The wiring 114a in the through hole 116e is bonded to the pad 155a via the bonding layer 124b. The wiring 114b in the through hole 116f is bonded to the pad 155b via the bonding layer 124b. The bonding layers 124a and 124b are, for example, solder or conductive paste.

  A terminal 122a (gate terminal) of the electronic component 120a is electrically connected to a lead 154a (gate lead GL) via a wiring 114a, a pad 113a, a bonding layer 124b, and a pad 155a. The terminal 122b (source terminal) of the electronic component 120a is electrically connected to the lead 154b (source lead SL) via the wiring 114b, the pad 113b, the bonding layer 124b, and the pad 155b. The terminal 122c (drain terminal) of the electronic component 120a is electrically connected to the lead 154c (drain lead DL) via the bonding layer 124a and the die pad 152. The leads 154a, 154b and 154c may be a base lead BL, an emitter lead EL and a collector lead CL.

  As in the third modification of the second embodiment, the sheet module 111 may be mounted on a conductive pattern provided on a substrate having at least one insulating layer made of resin or ceramic. As in Modifications 5 and 6 of the second embodiment, the sheet module 111 may be mounted on a die pad 152 of a lead frame obtained by punching or etching a metal plate. The sheet module 111 may be mounted on a metal substrate (for example, having copper or aluminum as a main material) insulated with a resin material. The sheet module 111 may be mounted on a conductive metal plate (for example, mainly made of copper, aluminum, iron, or stainless steel). The plane shape of the metal substrate and the metal plate is, for example, rectangular or elliptical.

  In the second embodiment and its modifications, a power module on which a power semiconductor element is mounted has been described as an example, but a module on which electronic components other than the power semiconductor element are mounted may be used.

  As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited to the specific embodiments, and various modifications and changes may be made within the scope of the present invention described in the appended claims. Changes are possible.

DESCRIPTION OF SYMBOLS 10 Insulation layer 12, 24, 38 Joining layer 14a, 14b Wiring 15a, 15b Pad 16a-16c Through hole 18a, 18b Metal layer 20, 20a, 20b Electronic component 22a-22e Terminal 27 Resin 28 Sealing resin 29 Resin sealing Gate mark 30 Lead frame 32 Die pad 34a-34c Lead 35a, 35b Frame pad 40 Cut 41 Slit 50 Upper mold 51 Gate 52 Lower mold 110 Insulating layer 112, 124 Bonding layer 114, 114a-114c Wiring 116, 116a-116d Penetration Hole 120a-120d Electronic component 122a-122e Terminal

Claims (23)

An insulating layer, an electronic component mounted on the lower surface of the insulating layer, and electrically connected to the electronic component via a first through hole penetrating the insulating layer, extending an upper surface of the insulating layer, A first wiring having a first pad at a portion, and a second pad electrically connected to the electronic component through a second through hole penetrating the insulating layer, extending an upper surface of the insulating layer, and providing a second pad at an end portion. A second wiring having: a sheet module having:
A die pad to which a lower surface of the electronic component is fixed;
A first frame pad to which the first pad is fixed, a first lead extending from the first frame pad;
A second lead having a second frame pad to which the second pad is fixed, and extending from the second frame pad substantially parallel to a direction in which the first lead extends;
A third lead provided between the first lead and the second lead, integrally formed with the die pad, and extending substantially parallel to a direction in which the first lead and the second lead extend;
A module comprising:   The module according to claim 1, wherein a cut is provided in the insulating layer between the first frame pad and the third lead and / or between the second frame pad and the third lead.   The module according to claim 1, wherein an upper surface of the first pad and a lower surface of the first frame pad are fixed, and an upper surface of the second pad and a lower surface of the second frame pad are fixed.   The module according to claim 1, wherein a lower surface of the first pad and an upper surface of the first frame pad are fixed, and a lower surface of the second pad and an upper surface of the second frame pad are fixed.   5. The method according to claim 4, wherein a lower surface of the first pad is fixed to an upper surface of the first frame pad via a first shim, and a lower surface of the second pad is fixed to an upper surface of the second frame pad via a second shim. The described module.   The module according to claim 1, wherein the seat module includes a plurality of the electronic components.   The module according to any one of claims 1 to 6, wherein the electronic component is a power semiconductor element, and the insulating layer is a polyimide sheet. The electronic component includes a first electronic component and a second electronic component,
The module according to claim 1, wherein a slit that penetrates the insulating layer is provided in the insulating layer between the first electronic component and the second electronic component. An electronic component is mounted on the lower surface, a wiring electrically connected to the electronic component is provided on the upper surface, and an insulating layer provided with an opening near an end of the wiring is prepared, a sheet module having: Inserting a frame pad provided at the end of the lead into the opening,
Electrically connecting the frame pad to the wiring with the frame pad inserted into the opening;
A method for manufacturing a module including: The step of inserting the frame pad into the opening includes preparing a die pad to which a lower surface of the electronic component is fixed, and a lead frame having the lead extending from the frame pad to the opposite side of the die pad. Including a step of inserting a frame pad,
The method for manufacturing a module according to claim 9, wherein the method for manufacturing the module includes a step of fixing the sheet module to the lead frame with the frame pad inserted into the opening.   The module manufacturing method according to claim 9, wherein in the step of inserting the frame pad into the opening, a metal layer is provided on the insulating layer so as to surround the opening. An electronic component is mounted on a lower surface, and a first wiring and a second wiring electrically connected to the electronic component are provided on an upper surface, and a first pad of the first wiring and a second pad of the second wiring are provided. A sheet module having an insulating layer provided with a notch therebetween is prepared, and a die pad to which a lower surface of the electronic component is fixed, a first frame pad to be fixed to the first pad, and a fixing to the second pad. Fixing the sheet module to a lead frame having:
A step of resin-sealing the sheet module and the lead frame,
Including
In the resin sealing step, a method for manufacturing a module in which molten resin passes through the cuts.   In the resin sealing step, a mold provided with a gate for injecting the resin so that the molten resin flows in a direction parallel to an upper surface of the die pad and / or in a direction from the lower surface of the die pad to the upper surface is used. Item 13. A method for manufacturing a module according to Item 12. A resin insulation layer,
A first electronic component having a first terminal and a second terminal on an upper surface, and mounted on a lower surface of the resin insulating layer;
A resin bonding layer for bonding a lower surface of the resin insulating layer and an upper surface of the first electronic component;
A first wiring provided on an inner surface of one or more first through holes penetrating the resin insulating layer and the resin bonding layer and on an upper surface of the resin insulating layer, and connected to the first terminal;
A second wiring provided on the inner surface of one or more second through holes penetrating the resin insulating layer and the resin bonding layer and on the upper surface of the resin insulating layer, and connected to the second terminal;
With
An opening is provided between the first terminal and the second terminal and between the first wiring and the second wiring, the opening penetrating the resin insulating layer and the resin bonding layer, and another metal layer is provided. Module that has not been installed.   The total area where the one or more first through holes are connected to the first terminal is smaller than the total area where the one or more second through holes are connected to the second terminal. module.   16. The opening according to claim 15, wherein the opening is provided between the one or more first through holes and the second wiring where the distance between the one or more first through holes and the second wiring is the shortest. The described module.   17. The module according to claim 16, wherein an end of the opening is located outside an outermost end of the one or more first through holes. The first electronic component is a transistor,
The module according to any one of claims 15 to 17, wherein the first terminal is a control terminal of the transistor, and the second terminal is a terminal other than the control terminal of the transistor.   The module according to claim 14, wherein the opening overlaps the first electronic component in a thickness direction of the resin insulating layer and does not overlap a region outside the first electronic component.   19. The module according to claim 14, wherein a region where the opening is projected on the first electronic component divides the first electronic component into two regions.   The module according to any one of claims 14 to 20, wherein a thickness of each of the first wiring and the second wiring is larger than a total thickness of the resin insulating layer and the resin bonding layer. A second electronic component having a third terminal on an upper surface and mounted on a lower surface of the resin insulating layer;
22. The device according to claim 14, wherein at least one of the first wiring and the second wiring connects the third terminal to at least one of the first terminal and the corresponding second terminal. module. A flexible insulating layer;
Electronic components mounted on the lower surface of the insulating layer,
A wiring that is electrically connected to the electronic component through a through hole that penetrates the insulating layer, extends an upper surface of the insulating layer, and has a pad at an end;
A metal layer provided in the insulating layer to surround an opening provided in the insulating layer near the pad;
A module comprising:

Images