JP2020027919A - Substrate heating device and substrate processing system - Google Patents

Abstract

To hardly limit the heating temperature of a substrate, and suppress adhesion of a sublimate to the inside of a chamber.SOLUTION: A substrate heating device according to an embodiment includes a chamber in which an accommodation space capable of accommodating a substrate coated with a solution is formed, a substrate heating unit arranged in the accommodation space and capable of heating the substrate, and a glass disposed at least between an application surface of the solution on the substrate and a facing surface facing the application surface in the chamber.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate heating device and a substrate processing system.

  In recent years, there is a market need for a flexible resin substrate as a substrate for an electronic device instead of a glass substrate. For example, such a resin substrate uses a polyimide film. For example, the polyimide film is formed through a step of heating the substrate (heating step) after applying a solution of the polyimide precursor to the substrate. For example, as a solution of a polyimide precursor, there is a polyamic acid varnish containing a polyamic acid and a solvent. A polyimide can be obtained by heating and curing the polyamic acid (for example, see Patent Document 1).

On the other hand, there is a heat treatment apparatus provided with a member surrounding a heat treatment space in which a substrate to be processed is arranged and a hot plate for heating the substrate to be processed (for example, see Patent Document 2).
In Patent Literature 2, a surrounding member is provided with an adhesion preventing film for impurities generated from a non-processed substrate. For example, the anti-adhesion film is mainly composed of a fluororesin.

JP-A-5-129774 JP 2005-19593 A

According to the technology disclosed in Patent Document 2, it is possible to reduce the adhesion of the sublimate generated during the heating of the photoresist to the unit.
However, since the anti-adhesion film of Patent Document 2 contains a fluorine-based resin as a main component, it is highly likely that application of the anti-adhesion film becomes difficult depending on the heating temperature of the substrate. For example, when the heating temperature of the substrate is 300 ° C. or higher, it is difficult to use a fluorine resin as the adhesion preventing film. Therefore, when a fluorine-based resin is used as the adhesion preventing film, the heating temperature of the substrate needs to be set in a narrow range, and the heating temperature of the substrate is easily limited.

  In view of the above-described circumstances, the present invention provides a substrate heating apparatus and a substrate processing system that make it difficult to limit the heating temperature of a substrate and that can suppress the adhesion of sublimates to the inside of a chamber. Aim.

A substrate heating apparatus according to one embodiment of the present invention includes a chamber in which an accommodation space capable of accommodating a substrate coated with a solution is formed, and a substrate heating unit disposed in the accommodation space and capable of heating the substrate. And glass disposed at least between a surface of the substrate on which the solution is applied and a facing surface of the chamber facing the coating surface.
According to this configuration, by including glass disposed at least between the application surface of the solution on the substrate and the opposing surface facing the application surface in the chamber, fumes directed from the application surface of the substrate to the opposing surface of the chamber are reduced. Since it can be shielded by glass, it is possible to suppress the adhesion of sublimates to the opposing surface (inside the chamber) of the chamber. In addition, since the heat resistance temperature (continuous use temperature) of glass is higher than that of resin, the heating temperature of the substrate can be set in a wider range, and the heating temperature of the substrate is not easily limited. Therefore, the heating temperature of the substrate is less likely to be limited, and adhesion of sublimates to the inside of the chamber can be suppressed.

In the above substrate heating apparatus, the glass may have a quartz content of 50% or more.
According to this configuration, the heat resistance temperature of the glass can be improved as compared with the case where the quartz content is less than 50%. Therefore, the heating temperature of the substrate can be set in a wider range, and the heating temperature of the substrate is less likely to be limited.

In the above substrate heating apparatus, the glass has an infrared absorptivity of 30% or more in a near infrared wavelength region (1 μm or more and less than 2.5 μm) and 90% in a far infrared wavelength region (2.5 μm or more and 5 μm or less). It may be the above.
According to this configuration, since the near-infrared absorptivity of the glass is 30% or more, compared to the case where the near-infrared absorptivity of the glass is less than 30%, heating of the glass by absorption of near-infrared rays is promoted. can do. In addition, when the far-infrared absorptivity of the glass is 90% or more, compared to the case where the far-infrared absorptivity of the glass is less than 90%, the heating of the glass by the far-infrared absorption can be promoted. it can. By promoting the heating of the glass in this way, it is possible to suppress the fumes from the application surface of the substrate toward the opposing surface of the chamber from being cooled on the surface of the glass and becoming sublimates. Therefore, adhesion of the sublimate to the glass can be suppressed.

In the above substrate heating apparatus, the substrate may be a substrate to which a solution for forming a polyimide has been applied.
According to this configuration, at the time of forming the polyimide, the heating temperature of the substrate is less likely to be limited, and the adhesion of sublimates to the inside of the chamber can be suppressed.

In the above substrate heating apparatus, the chamber is located above the substrate and forms a top plate forming the facing surface; a bottom plate located below the substrate and facing the top plate; and a periphery of the substrate. Wherein the glass is provided on each of the top plate, the bottom plate, and the peripheral wall of the chamber.
According to this configuration, fumes directed from the application surface of the substrate to each of the top plate, the bottom plate, and the peripheral wall of the chamber can be blocked by the glass. Can be suppressed.

In the above substrate heating device, the thickness of the glass may be 0.5 mm or more and 10 mm or less.
According to this configuration, when the thickness of the glass is 0.5 mm or more, compared to the case where the thickness of the glass is less than 0.5 mm, infrared rays are easily absorbed by the glass, and thus the heating of the glass is promoted. And it is easy to suppress the adhesion of sublimates to the glass. In addition, when the thickness of the glass is 10 mm or less, heat is easily transmitted as compared with the case where the thickness of the glass exceeds 10 mm, so that the glass is not easily broken.

In the above substrate heating apparatus, the glass may have a coefficient of thermal expansion of 15 × 10 ⁻⁷ / K or less in a range of 0 ° C. or more and 750 ° C. or less.
According to this configuration, since the dimensional change of the glass is smaller than that in the case where the coefficient of thermal expansion of the glass exceeds 15 × 10 ⁻⁷ / K in the range of 0 ° C. or more and 750 ° C. or less, the glass is easily supported. For example, when the glass is supported by being sandwiched between support members, the generation of foreign matter due to friction between the glass and the support member can be suppressed.

In the above substrate heating device, the substrate heating section may include an infrared heater supported on a top plate of the chamber, and the glass may be disposed between the top plate and the infrared heater.
According to this configuration, as compared with the case where the glass is arranged between the substrate and the infrared heater, the infrared rays directed from the infrared heater to the substrate are less likely to be blocked by the glass (since the infrared rays easily go directly to the substrate). Easy to promote heating. By the way, in a method of heating a substrate by circulating hot air in an oven, there is a possibility that foreign matter may be wound up in the accommodation space of the substrate due to the circulation of hot air. On the other hand, according to this configuration, the substrate can be heated in a state where the atmosphere in the space for accommodating the substrate is depressurized, so that the risk of foreign matter being wound up in the space for accommodating the substrate can be reduced. Therefore, it is suitable for suppressing foreign substances from adhering to the inner surface of the chamber or the substrate.

In the above substrate heating apparatus, an attachment portion for attaching the glass to the chamber may be provided at an upper portion of the chamber, and the attachment portion may be arranged at a position avoiding the substrate in plan view.
According to this configuration, even when foreign matter is generated by rubbing between the glass and the mounting part, the foreign matter is prevented from falling onto the substrate, as compared with the case where the mounting part is arranged at a position overlapping the substrate in plan view. be able to.

A substrate processing system according to one embodiment of the present invention includes the above-described substrate heating device.
According to this configuration, in the substrate processing system, the heating temperature of the substrate is less likely to be restricted, and adhesion of sublimates to the inside of the chamber can be suppressed.

  Advantageous Effects of Invention According to the present invention, it is possible to provide a substrate heating apparatus and a substrate processing system capable of making it difficult to limit the heating temperature of a substrate and suppressing the adhesion of a sublimate inside a chamber.

It is a perspective view of the substrate heating device concerning a first embodiment. It is a figure including a section of a heating unit, a heat insulation member, a cover member, and a glass structure in a substrate heating device concerning a first embodiment. It is a side view which shows a hot plate and its peripheral structure. It is a top view of a hot plate. FIG. 3 is a diagram for explaining an arrangement relationship between a transport roller, a substrate, and a hot plate. It is a top view of an infrared reflection part. It is a perspective view which shows the attachment-detachment structure of a hot plate and an infrared reflection part. FIG. 4 is a side view showing a state where an infrared reflecting section is removed in FIG. 3. It is a top view which shows a cooling mechanism. FIG. 4 is a diagram for explaining an example of heating control in a hot plate. It is a figure for explaining an example of operation of a substrate heating device concerning a first embodiment. It is an operation explanatory view of the substrate heating device according to the first embodiment, following FIG. 11. FIG. 13 is an explanatory view of the operation of the substrate heating apparatus according to the first embodiment, following FIG. 12. It is a figure for explaining the arrangement relation of the attachment part of the glass top board and a substrate concerning a first embodiment. It is a figure for explaining arrangement structure of a glass peripheral wall and a glass bottom plate concerning a first embodiment. It is a figure including a section of a heating unit, a heat insulation member, a cover member, and a glass structure in a substrate heating device concerning a second embodiment. It is a figure for explaining an example of operation of a substrate heating device concerning a second embodiment. It is operation | movement explanatory drawing of the substrate heating apparatus which concerns on 2nd embodiment following FIG. FIG. 19 is an explanatory view of the operation of the substrate heating apparatus according to the second embodiment, following FIG. 18.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ rectangular coordinate system is set, and the positional relationship of each member will be described with reference to the XYZ rectangular coordinate system. The predetermined direction in the horizontal plane is the X direction, the direction orthogonal to the X direction in the horizontal plane is the Y direction, and the direction orthogonal to each of the X and Y directions (that is, the vertical direction) is the Z direction.

(First embodiment)
<Substrate heating device>
FIG. 1 is a perspective view of a substrate heating device 1 according to the first embodiment.
As shown in FIG. 1, the substrate heating apparatus 1 includes a chamber 2, a substrate carry-in / out section 24, a pressure adjusting section 3, a gas supply section 4, a gas diffusion section 60 (see FIG. 2), a hot plate 5, an infrared heater 6, The adjusting unit 7, the transporting unit 8, the temperature detecting unit 9, the pressure detecting unit 14, the gas liquefaction collecting unit 11, the infrared reflecting unit 30, the heating unit 80, the heat insulating member 26, the cover member 27, the glass structure 90, and the control unit 15 Have. The control unit 15 controls the components of the substrate heating apparatus 1 overall. In FIG. 1, a part of the chamber 2 (a part excluding a part of the top plate 21), the substrate carrying-in / out part 24 and the gas supply part 4 are indicated by two-dot chain lines.

<Chamber>
The chamber 2 can accommodate the substrate 10, the hot plate 5, the infrared heater 6, and the glass structure 90. An accommodation space 2S capable of accommodating the substrate 10 is formed inside the chamber 2. The substrate 10, the hot plate 5, and the infrared heater 6 are housed in the common chamber 2. The chamber 2 is formed in a rectangular parallelepiped box shape. Specifically, the chamber 2 includes a rectangular plate-shaped top plate 21, a rectangular plate-shaped bottom plate 22 facing the top plate 21, and a rectangular frame-shaped peripheral wall 23 connected to the outer peripheral edges of the top plate 21 and the bottom plate 22. Is formed. For example, on the −X direction side of the peripheral wall 23, a substrate loading / unloading port 23a for loading / unloading the substrate 10 into / from the chamber 2 is provided.

  The chamber 2 is configured to be able to accommodate the substrate 10 in a closed space. For example, the airtightness in the chamber 2 can be improved by connecting the connection portions of the top plate 21, the bottom plate 22, and the peripheral wall 23 without any gap by welding or the like.

  The inner surface of the chamber 2 is a chamber-side reflecting surface 2a (see FIG. 2) that reflects infrared rays from the infrared heater 6. For example, the inner surface of the chamber 2 is a mirror surface (reflection surface) made of metal such as stainless steel. Thereby, the temperature uniformity in the chamber 2 can be improved as compared with the case where the inner surface of the chamber 2 can absorb infrared rays. The inner surface of the chamber 2 may be a mirror surface made of aluminum.

  The chamber-side reflection surface 2 a is provided on the entire inner surface of the chamber 2. The chamber-side reflection surface 2a is mirror-finished. Specifically, the surface roughness (Ra) of the chamber-side reflection surface 2a is about 0.01 μm, and Rmax is about 0.1 μm. The surface roughness (Ra) of the chamber-side reflection surface 2a is measured by a measuring instrument (Surfcom 1500SD2) manufactured by Tokyo Seimitsu Co., Ltd.

<Substrate loading / unloading section>
The substrate carrying-in / out portion 24 is provided on the −X direction side of the peripheral wall 23. The substrate carrying-in / out section 24 enables the substrate 10 to be carried into the accommodation space 2S and allows the substrate 10 to be discharged from the accommodation space 2S. For example, the substrate loading / unloading section 24 is configured to be able to open and close the substrate loading / unloading port 23a. For example, the substrate loading / unloading section 24 is a shutter that can open and close the substrate loading / unloading port 23a. Specifically, the substrate carrying-in / out section 24 is movable in a direction along the peripheral wall 23 (Z direction or Y direction).

<Pressure adjustment unit>
The pressure adjuster 3 is capable of adjusting the pressure in the chamber 2. The pressure adjusting section 3 includes a vacuum pipe 3 a connected to the chamber 2. The vacuum pipe 3a is a cylindrical pipe extending in the Z direction. For example, a plurality of vacuum pipes 3a are arranged at intervals in the X direction. FIG. 1 shows only one vacuum pipe 3a. Note that the number of the vacuum pipes 3a is not limited.

  The vacuum pipe 3a shown in FIG. 1 is connected to a portion near the substrate carrying-in / out port 23a on the −X direction side of the bottom plate 22. The connection portion of the vacuum pipe 3a is not limited to the portion near the substrate loading / unloading port 23a on the −X direction side of the bottom plate 22. The vacuum pipe 3a only needs to be connected to the chamber 2.

  For example, the pressure adjusting unit 3 includes a pressure adjusting mechanism such as a pump mechanism. The pressure adjusting mechanism includes a vacuum pump 13. The vacuum pump 13 is connected to a line extending from a portion (lower end) of the vacuum pipe 3a opposite to a connection portion (upper end) with the chamber 2 (upper end).

The pressure adjusting unit 3 is capable of adjusting the pressure of the atmosphere in the accommodation space 2S of the substrate 10 to which a solution for forming a polyimide film (polyimide) (hereinafter, referred to as “polyimide forming liquid”) is applied. For example, the polyimide forming liquid contains a polyamic acid or a polyimide powder. The polyimide forming liquid is applied only to the first surface 10a (upper surface) of the substrate 10 having a rectangular plate shape.
The material to be applied to the substrate 10 (object to be processed) is not limited to the polyimide forming liquid, and may be any as long as it forms a predetermined film on the substrate 10.

The pressure adjusting unit 3 is capable of adjusting the pressure of the atmosphere in the accommodation space 2S. Separately, the pressure adjusting unit 3 includes nitrogen (N ₂ ) and helium (He) in the accommodation space 2S. A mechanism for supplying an inert gas such as argon (Ar) (hereinafter, also referred to as an “inert gas supply mechanism”) may be provided. Thereby, the accommodation space 2S can be adjusted to a desired pressure condition. Such adjustment of the pressure condition may be performed in each of the accommodation step, the substrate heating step, and the chamber heating step in the substrate heating method described below.
Further, like a gas supply unit 4 described later, an inert gas supply mechanism may be provided separately from the pressure adjustment unit 3.

<Gas supply unit>
The gas supply unit 4 is capable of adjusting the state of the atmosphere inside the chamber 2. The gas supply unit 4 includes a gas supply pipe 4a connected to the chamber 2. The gas supply pipe 4a is a cylindrical pipe extending in the X direction. The gas supply pipe 4a is connected to a portion of the peripheral wall 23 near the top plate 21 on the + X direction side. The connection portion of the gas supply pipe 4a is not limited to the portion near the top plate 21 on the + X direction side of the peripheral wall 23. The gas supply pipe 4a only needs to be connected to the chamber 2.

The gas supply unit 4 can adjust the state of the storage space 2S by supplying an inert gas to the storage space 2S. The gas supply unit 4 supplies an inert gas such as nitrogen (N ₂ ), helium (He), and argon (Ar) into the chamber 2. The gas supply unit 4 may use the gas for cooling the substrate by supplying the gas when the temperature of the substrate is lowered.

The oxygen concentration in the atmosphere inside the chamber 2 can be adjusted by the gas supply unit 4. The lower the oxygen concentration (based on mass) of the atmosphere inside the chamber 2, the better. Specifically, the oxygen concentration in the atmosphere inside the chamber 2 is preferably 100 ppm or less, more preferably 20 ppm or less.
For example, as described later, in an atmosphere in which the polyimide forming liquid applied to the substrate 10 is cured, by setting the oxygen concentration to a preferable upper limit or less in this manner, the curing of the polyimide forming liquid is facilitated. be able to.

<Gas diffusion part>
As shown in FIG. 2, the −X direction side of the gas supply pipe 4 a projects into the chamber 2. The gas diffusion unit 60 is connected to a protruding end of the gas supply pipe 4a in the chamber 2. The gas diffusion unit 60 is disposed in the chamber 2 at a position near the top plate 21. The gas diffusion unit 60 is disposed between the infrared heater 6 and the transfer unit 8 in the chamber 2. The gas diffusion unit 60 diffuses the inert gas supplied from the gas supply pipe 4a toward the substrate 10.

  The gas diffusion portion 60 includes a cylindrical diffusion tube 61 extending in the X direction, a lid portion 62 for closing the -X direction end of the diffusion tube 61, a + X direction end of the diffusion tube 61, and a-of the gas supply pipe 4a. A connecting portion 63 for connecting to an X-direction end (projecting end). The outer diameter of the diffusion pipe 61 is larger than the outer diameter of the gas supply pipe 4a. A plurality of pores (not shown) are formed on the −Z direction side (lower side) of the diffusion tube 61. That is, the lower part of the diffusion tube 61 is made porous (porous body). The internal space of the gas supply pipe 4 a communicates with the inside of the diffusion pipe 61 via the connection part 63.

  The inert gas supplied from the gas supply pipe 4 a enters the diffusion pipe 61 via the connection part 63. The inert gas that has entered the diffusion tube 61 is diffused downward through a plurality of pores formed below the diffusion tube 61. That is, the inert gas supplied from the gas supply pipe 4 a is diffused toward the substrate 10 by passing through the diffusion pipe 61.

<Hot plate (first heating unit)>
As shown in FIG. 1, the hot plate 5 is disposed below the chamber 2. The hot plate 5 is a substrate heating unit that is disposed on one side of the substrate 10 and that can heat the substrate 10. The hot plate 5 can heat the substrate 10 at a first temperature. The hot plate 5 can heat the substrate 10 stepwise. For example, the temperature range including the first temperature is a range from 20 ° C. to 300 ° C. The hot plate 5 is disposed on a second surface 10b (lower surface) of the substrate 10 opposite to the first surface 10a. The hot plate 5 is arranged on the side of the bottom plate 22 of the chamber 2.

  The hot plate 5 has a rectangular plate shape. The hot plate 5 can support the infrared reflection unit 30 from below.

FIG. 3 is a side view showing the hot plate 5 and its peripheral structure.
As shown in FIG. 3, the hot plate 5 includes a heater 5b that is a heating source, and a base plate 5c that covers the heater 5b.
The heater 5b is a planar heating element parallel to the XY plane.
The base plate 5c includes an upper plate 5d that covers the heater 5b from above, and a lower plate 5e that covers the heater 5b from below. The upper plate 5d and the lower plate 5e have a rectangular plate shape. The thickness of the upper plate 5d is larger than the thickness of the lower plate 5e.

  In FIG. 3, reference numeral 18 denotes a heater temperature detecting unit capable of detecting the temperature of the heater in the hot plate 5, and reference numeral 19 denotes a plate temperature detecting unit capable of detecting the temperature of the upper plate 5d in the hot plate 5. For example, the heater temperature detector 18 and the plate temperature detector 19 are contact-type temperature sensors such as thermocouples.

  FIG. 4 is a top view of the hot plate 5. As shown in FIG. 4, the hot plate 5 (that is, the upper plate 5d) includes a mounting surface 5a (upper surface) on which the infrared reflecting unit 30 (see FIG. 3) can be mounted. The mounting surface 5a is a flat surface along the back surface of the infrared reflecting section 30. The mounting surface 5a is anodized. The mounting surface 5a includes a plurality (for example, four in the present embodiment) of mounting regions A1, A2, A3, and A4 partitioned in the plane of the mounting surface 5a. The mounting areas A1, A2, A3, and A4 have a rectangular shape having a length in the X direction in plan view. Note that the number of the placement areas A1, A2, A3, A4 is not limited to four and can be changed as appropriate.

<Infrared heater (second heating unit)>
As shown in FIG. 1, the infrared heater 6 is disposed above the inside of the chamber 2. The infrared heater 6 can heat the substrate 10 by infrared rays. The infrared heater 6 is a substrate heating unit disposed on the other surface side of the substrate 10 and capable of heating the substrate 10. The infrared heater 6 can heat the substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 is provided independently of the hot plate 5. The infrared heater 6 can heat the substrate 10 stepwise. For example, the temperature range including the second temperature is a range from 200 ° C. to 600 ° C. The infrared heater 6 is arranged on the side of the first surface 10 a of the substrate 10. The infrared heater 6 is arranged on the top plate 21 side of the chamber 2.

  The infrared heater 6 is supported by a top plate 21. A support member (not shown) for the infrared heater 6 is provided between the infrared heater 6 and the top plate 21. The infrared heater 6 is fixed at a fixed position near the top plate 21 in the chamber 2. For example, the peak wavelength range of the infrared heater 6 is in a range from 1.0 μm to 4 μm. Note that the peak wavelength range of the infrared heater 6 is not limited to the above range, but can be set to various ranges according to required specifications.

The heating rate of the infrared heater 6 is higher than the heating rate of the hot plate 5.
For example, the heating rate of the hot plate 5 is about 0.2 ° C./sec.
For example, the temperature rising rate of the infrared heater 6 is about 4 ° C./sec.

The cooling rate of the infrared heater 6 is higher than the cooling rate of the hot plate 5.
For example, the cooling rate of the hot plate 5 is about 0.05 ° C./sec.
For example, the temperature drop rate of the infrared heater 6 is about 2 ° C./sec.

<Position adjuster>
The position adjusting unit 7 is arranged below the chamber 2. The position adjuster 7 can adjust the relative positions of the hot plate 5 and the infrared heater 6 and the substrate 10. The position adjusting unit 7 includes a moving unit 7a and a driving unit 7b. The moving part 7a is a columnar member extending vertically (Z direction). The upper end of the moving part 7 a is fixed to the lower surface of the hot plate 5. The driving unit 7b enables the moving unit 7a to move up and down. The moving unit 7 a enables the substrate 10 to move between the hot plate 5 and the infrared heater 6. Specifically, the moving unit 7a moves the substrate 10 up and down by driving the driving unit 7b while the substrate 10 is supported by the infrared reflecting unit 30 (see FIGS. 12 and 13).

  The driving unit 7b is arranged outside the chamber 2. Therefore, even if particles are generated due to the driving of the driving unit 7b, the invasion of particles into the chamber 2 can be avoided by making the inside of the chamber 2 a closed space.

<Transport section>
The transfer section 8 is disposed between the hot plate 5 and the infrared heater 6 in the chamber 2. The transfer unit 8 can transfer the substrate 10. The transporting section 8 is formed with a passing section 8h that allows the moving section 7a to pass through. The transport unit 8 includes a plurality of transport rollers 8a arranged along the X direction that is the transport direction of the substrate 10.

  The plurality of transport rollers 8a are arranged separately on the + Y direction side and the −Y direction side of the peripheral wall 23. That is, the passage portion 8h is a space between the transport roller 8a on the + Y direction side of the peripheral wall 23 and the transport roller 8a on the −Y direction side of the peripheral wall 23.

  For example, on each of the + Y direction side and the −Y direction side of the peripheral wall 23, a plurality of shafts (not shown) extending in the Y direction are arranged at intervals along the X direction. Each transport roller 8a is rotatably driven around each shaft by a drive mechanism (not shown).

FIG. 5 is a diagram for explaining an arrangement relationship between the transport roller 8a, the substrate 10, and the hot plate 5. FIG. 5 corresponds to a top view of the substrate heating apparatus 1 (see FIG. 1). For convenience, in FIG. 5, the chamber 2 is indicated by a two-dot chain line.
In FIG. 5, reference numeral L <b> 1 is an interval at which the transport roller 8 a on the + Y direction side of the peripheral wall 23 and the transport roller 8 a on the −Y direction side of the peripheral wall 23 are separated (hereinafter referred to as “roller separation interval”). Reference symbol L2 is the length of the substrate 10 in the Y direction (hereinafter, referred to as “substrate length”). Reference numeral L3 is the length of the hot plate 5 in the Y direction (hereinafter, referred to as "hot plate length"). Note that the hot plate length L3 is substantially the same as the length of the infrared reflecting section 30 in the Y direction.

  As shown in FIG. 5, the roller separation distance L1 is smaller than the substrate length L2 and larger than the hot plate length L3 (L3 <L1 <L2). Since the roller separation interval L1 is larger than the hot plate length L3, the moving unit 7a can pass through the passing unit 8h together with the hot plate 5 and the infrared reflecting unit 30 (see FIGS. 12 and 13).

<Temperature detector>
As shown in FIG. 1, the temperature detector 9 is disposed outside the chamber 2. The temperature detecting section 9 can detect the temperature of the substrate 10. Specifically, the temperature detection unit 9 is installed above the top plate 21. A window (not shown) is attached to the top plate 21. The temperature detecting section 9 detects the temperature of the substrate 10 through the window of the top plate 21. For example, the temperature detector 9 is a non-contact temperature sensor such as a radiation thermometer. Although FIG. 1 shows only one temperature detecting unit 9, the number of the temperature detecting units 9 is not limited to one, and may be plural. For example, it is preferable to arrange the plurality of temperature detection units 9 at the center and the four corners of the top plate 21. Note that the temperature detection unit 9 may be disposed in the chamber 2. In this case, the temperature detector 9 may be a contact-type temperature sensor such as a thermocouple.

<Pressure detector>
The pressure detection unit 14 can detect the pressure of the accommodation space 2S (hereinafter, also referred to as “in-chamber pressure”). For example, a main body (sensor) of the pressure detection unit 14 is disposed in the chamber 2. For example, a display unit (pressure indicator) of the pressure detection unit 14 is disposed outside the chamber 2. For example, the pressure detection unit 14 is a digital pressure sensor. Although FIG. 1 shows only one pressure detection unit 14, the number of pressure detection units 14 is not limited to one and may be plural.

<Gas liquefaction recovery section>
The gas liquefaction and recovery unit 11 is connected to a line of the pressure adjustment unit 3 (vacuum pump 13). The gas liquefaction and recovery unit 11 is disposed downstream of the vacuum pump 13 in the line of the pressure adjustment unit 3. The gas liquefaction and recovery unit 11 can liquefy the gas passing through the vacuum pipe 3a and recover the solvent volatilized from the polyimide forming liquid applied to the substrate 10.

  If the gas liquefaction and recovery unit 11 is disposed upstream of the vacuum pump 13 in the line of the pressure adjusting unit 3, the liquid liquefied on the upstream side may be vaporized at the next decompression, and the evacuation time may be reduced. May be delayed. On the other hand, according to the present embodiment, since the gas liquefaction and recovery unit 11 is disposed downstream of the vacuum pump 13 in the line of the pressure adjustment unit 3, the liquid liquefied on the downstream side is used at the next decompression. Since it is not vaporized, a delay in evacuation time can be avoided.

<Swinging part>
The substrate heating device 1 may further include a swing unit (not shown) that can swing the substrate 10. For example, the swing unit swings the substrate 10 in a direction along the XY plane or in a direction along the Z direction while the substrate 10 is being heated. Thereby, the substrate 10 can be heated while being rocked, so that the temperature uniformity of the substrate 10 can be improved.
For example, the swing unit may be provided in the position adjustment unit 7. In addition, the arrangement position of the swinging part is not limited.

<Infrared reflective part>
The infrared reflecting section 30 includes a hot plate-side reflecting surface 30a that reflects infrared light from the infrared heater 6 toward the hot plate 5. The hot plate side reflection surface 30 a is arranged between the hot plate 5 and the infrared heater 6.

  The hot plate side reflection surface 30a is mirror-finished. Specifically, the surface roughness (Ra) of the hot plate side reflection surface 30a is about 0.01 μm, and Rmax is about 0.1 μm. The surface roughness (Ra) of the hot plate side reflection surface 30a is measured by a measuring instrument (Surfcom 1500SD2) manufactured by Tokyo Seimitsu Co., Ltd.

FIG. 6 is a top view of the infrared reflection unit 30.
As shown in FIG. 6, a plurality of (for example, 80 in the present embodiment) substrate support projections 35 (not shown in FIG. 1) that can support the substrate 10 are provided on the hot plate side reflection surface 30 a. I have. Note that the number of the substrate supporting projections 35 is not limited to 80, and can be changed as appropriate.

  The substrate supporting projection 35 is a columnar pin. In addition, the board | substrate support convex part 35 is not limited to a column shape. For example, the substrate supporting projection 35 may be a spherical body such as a ceramic ball. In addition, the substrate support protrusion 35 may have a prismatic shape, and can be appropriately changed.

  The plurality of substrate support protrusions 35 are arranged at regular intervals in the X direction and the Y direction in the plane of the hot plate side reflection surface 30a. For example, the arrangement interval of the substrate supporting protrusions 35 is about 50 mm. For example, the height of the substrate supporting projection 35 is about 0.1 mm. For example, the height of the substrate supporting projection 35 can be adjusted in a range of 0.05 mm to 3 mm. Note that the arrangement interval of the substrate support protrusions 35 and the height of the substrate support protrusions 35 are not limited to the above dimensions, and the substrate 10 is supported in a state where a gap is formed between the hot plate side reflection surface 30a and the substrate 10. It can be changed appropriately within a possible range.

  The plurality of (for example, four in the present embodiment) divided into a plurality of (for example, four in the present embodiment) mounting areas A1, A2, A3, and A4 (see FIG. 3). Infrared reflecting plates 31, 32, 33 and 34 are provided. Note that the number of the infrared reflecting plates 31, 32, 33, 34 is not limited to four, and can be changed as appropriate. For example, only one infrared reflection plate may be used.

  The plurality of infrared reflecting plates 31, 32, 33, and 34 have substantially the same size as each other. Thus, the infrared reflectors 31, 32, 33, and 34 to be placed in the respective placement areas A1, A2, A3, and A4 (see FIG. 3) can be shared. Note that the sizes of the infrared reflecting plates 31, 32, 33, and 34 may be different from each other, and can be appropriately changed.

  Each of the infrared reflecting plates 31, 32, 33, and 34 has a rectangular plate shape having a length in the X direction. One infrared reflecting plate 31, 32, 33, 34 is provided with a total of 20 substrate support projections 35 in 5 rows and 4 columns (that is, 5 in the X direction and 4 in the Y direction).

  Adjacent two infrared reflection plates 31, 32, 33, 34 are arranged at intervals S1, S2. The interval S1 has a size that allows thermal expansion of two adjacent infrared reflecting plates 31, 32, 33, and 34. Specifically, the interval S1 between the two infrared reflectors 31, 32, 33, 34 adjacent in the X direction is set to a size capable of absorbing the expansion of the infrared reflectors 31, 32, 33, 34 in the X direction. I have. The distance S2 between the two infrared reflectors 31, 32, 33, 34 adjacent in the Y direction is set to a size capable of absorbing the expansion of the infrared reflectors 31, 32, 33, 34 in the Y direction.

The arrangement structure of the infrared reflecting plates 31, 32, 33, 34 is not limited to the above. For example, the infrared reflecting plates 31, 32, 33, and 34 may be pressed and fixed from the side surfaces by a biasing member. For example, as the urging member, a spring that expands and contracts so as to absorb the expansion of the infrared reflecting plates 31, 32, 33, and 34 can be used.
When the infrared reflecting section 30 is a single plate member of G6 size (150 cm long x 185 cm wide) or more, the plate member may be fixed by pressing the plate member from the side with an urging member such as a spring. By the way, if the plate member is G6 size or more, even one plate member has considerable weight. However, the plate member can be easily fixed by pressing the plate member from the side surface with an urging member such as a spring.

<Removable structure of hot plate and infrared reflector>
FIG. 7 is a perspective view showing a detachable structure 40 between the hot plate 5 and the infrared reflecting section 30. FIG. 8 is a side view showing a state where the infrared reflecting section 30 is removed in FIG. In FIG. 7, a first infrared reflector 31 and a second infrared reflector 32 are disposed in the first placement area A1 and the second placement area A2, respectively, and the third infrared reflector 31 is located in the third placement area A3. The state in which the reflection plate 33 is to be placed is shown.

As shown in FIG. 7, between the hot plate 5 and the infrared reflecting section 30 (see FIG. 6), a detachable structure 40 for detachably attaching the infrared reflecting section 30 to the hot plate 5 is provided.
The detachable structure 40 includes a protruding portion 41 protruding from the mounting surface 5a, and an insertion portion 42 formed on the infrared reflecting portion 30 and into which the protruding portion 41 is inserted.

  The protruding portion 41 is arranged at the center in the Y direction in the placement areas A1, A2, A3, and A4. The protrusion 41 includes a first protrusion 41a and a second protrusion 41b separated from the first protrusion 41a in the X direction in the plane of the mounting surface 5a.

  The first convex portion 41a and the second convex portion 41b are arranged one by one for the placement areas A1, A2, A3, and A4. The first convex portion 41a is disposed on the −X direction side in the placement areas A1, A2, A3, and A4. The second convex portion 41b is arranged on the + X direction side in the mounting areas A1, A2, A3, and A4. As shown in FIG. 8, the first protrusion 41a and the second protrusion 41b have substantially the same height.

  The first protrusion 41a and the second protrusion 41b are columnar pins. In addition, the 1st convex part 41a and the 2nd convex part 41b are not limited to a column shape. For example, the first convex portion 41a and the second convex portion 41b may have a prismatic shape, and can be appropriately changed.

  As shown in FIG. 7, the insertion section 42 has the infrared reflectors 31, 32, 33, 34 in the short-side center (that is, the infrared reflectors 31, 32, 33, 34 are placed on the placement surface 5 a). (The center in the Y direction at the time). The insertion portion 42 expands or expands the infrared reflecting portion 30 in a direction (X direction) in which at least the first convex portion 41a and the second convex portion 41b are separated from the first concave portion 42a into which the first convex portion 41a is inserted. A second concave portion 42b into which the second convex portion 41b is inserted so as to allow contraction.

  The first concave portion 42a and the second concave portion 42b are arranged one for each of the infrared reflecting plates 31, 32, 33, and 34. The first concave portion 42a is arranged on one side in the longitudinal direction of the infrared reflecting plates 31, 32, 33, 34 (that is, on the −X direction side when the infrared reflecting plate is placed on the mounting surface 5a). The second concave portion 42b is located on the other side in the longitudinal direction of the infrared reflecting plates 31, 32, 33, and 34 (ie, the + X direction side when the infrared reflecting plates 31, 32, 33, and 34 are placed on the placing surface 5a). Are located.

  The first concave portion 42a is a concave portion that is depressed in the thickness direction of the infrared reflecting plates 31, 32, 33, and 34 so that the pins are removably inserted. The first concave portion 42a has an inner shape substantially the same as the outer shape of the first convex portion 41a. The first concave portion 42a has a circular shape in plan view. The first recess 42a is not limited to a circular shape in a plan view. For example, the first concave portion 42a may have a rectangular shape in a plan view, and can be appropriately changed according to the shape of the pin.

  The second concave portion 42b is a concave portion that is depressed in the thickness direction of the infrared reflecting plates 31, 32, 33, and 34 so that the pins are removably inserted. The second concave portion 42b has an inner shape larger than the outer shape of the second convex portion 41b in the X direction, and has substantially the same inner shape as the outer shape of the second convex portion 41b in the Y direction. The second concave portion 42b has an oval shape having a length in the X direction in plan view. Note that the second recess 42b is not limited to a shape having a length in the X direction in plan view. For example, the second concave portion 42b may have a rectangular shape having a length in the X direction in plan view, and can be appropriately changed according to the shape of the pin.

  The attachment / detachment structure 40 is not limited to including the protrusion 41 protruding from the mounting surface 5a and the insertion portion 42 formed on the infrared reflecting portion 30 and into which the protrusion 41 is inserted. For example, the attachment / detachment structure may include a projection protruding from the lower surface of the infrared reflecting section 30 and a recess formed on the mounting surface 5a and into which the projection is inserted.

<Cooling mechanism>
As shown in FIG. 3, the substrate heating apparatus 1 further includes a cooling mechanism 50 capable of cooling the hot plate 5.
FIG. 9 is a top view illustrating the cooling mechanism 50. In FIG. 9, illustration of the protrusion 41 and the like is omitted for convenience.
As shown in FIG. 9, the cooling mechanism 50 is provided inside the hot plate 5 and includes a refrigerant passage 51 that allows the refrigerant to pass through. For example, the refrigerant is air. Note that the refrigerant is not limited to a gas such as air. For example, the refrigerant may be a liquid such as water.

  A plurality of (for example, seven in the present embodiment) cooling passages extending in one direction parallel to the mounting surface 5a and arranged in a direction parallel to the mounting surface 5a and crossing the one direction. 51a and 51b are provided. That is, the refrigerant passage 51 includes a plurality of cooling passages 51a and 51b extending in the X direction and arranged in the Y direction.

  The plurality of cooling passages 51a and 51b include a plurality (for example, four in the present embodiment) of first cooling passages 51a that allow the refrigerant to pass from one end to the other end of the hot plate 5, A plurality of (for example, three in the present embodiment) second cooling passages 51b that pass from the end side to the one end side. That is, the refrigerant passing through the first cooling passage 51a flows from the −X direction side of the hot plate 5 toward the + X direction side. The refrigerant passing through the second cooling passage 51b flows from the + X direction side of the hot plate 5 toward the −X direction side.

  The first cooling passages 51a and the second cooling passages 51b are alternately arranged one by one in a direction parallel to the mounting surface 5a and intersecting the first direction. That is, the first cooling passages 51a and the second cooling passages 51b are alternately arranged one by one in the Y direction.

  The coolant passage section 51 further includes cooling manifolds 52 and 53 connected to the plurality of cooling passages 51a and 51b at one end and the other end of the hot plate 5. The cooling manifolds 52 and 53 are connected to the first manifold 52 connected to the plurality of cooling passages 51 a and 51 b on the −X direction side of the hot plate 5 and to the plurality of cooling passages 51 a and 51 b on the + X direction side of the hot plate 5. A second manifold 53 to be provided.

  The first manifold 52 includes a first upstream connection path 52a extending in the Y direction so as to connect upstream ends (−X direction ends) of the plurality of first cooling passages 51a, and downstream ends of the plurality of second cooling passages 51b ( -X direction end) and a second downstream connection path 52b extending in the Y direction so as to connect the (i.e., -X end). The first manifold 52 includes a first piping section 54 including a first upstream pipe 54a connected to the first upstream connection path 52a, and a second downstream pipe 54b connected to the second downstream connection path 52b. Is provided.

  The second manifold 53 is connected to the first downstream connection passage 53a extending in the Y direction so as to connect the downstream ends of the plurality of first cooling passages 51a and the Y direction so as to connect the upstream ends of the plurality of second cooling passages 51b. And a second upstream connection path 53b extending to The second manifold 53 includes a second pipe section 55 including a first downstream pipe 55a connected to the first downstream connection path 53a, and a second upstream pipe 55b connected to the second upstream connection path 53b. Is provided.

For example, air is introduced into the internal space of the first upstream pipe 54a by a blower (not shown). Thereby, the air from the blower flows through the first cooling passages 51a toward the + X direction side via the first upstream pipe 54a and the first upstream connection passage 52a, respectively, and then flows through the first downstream connection passage 53a and the second cooling passage 51a. The air is discharged to the outside via one downstream pipe 55a.
On the other hand, air is introduced into the internal space of the second upstream pipe 55b by a blower (not shown). Thereby, the air from the blower flows through the plurality of second cooling passages 51b toward the −X direction side via the second upstream pipe 55b and the second upstream connection path 53b, and then the second downstream connection path 52b. The air is discharged to the outside via the second downstream pipe 54b.
The introduction of air is not limited to a blower, but may be performed by compressed air using dry air. 3 and 8, illustration of the second downstream connection path 52b, the second upstream connection path 53b, and the like is omitted.

<Auxiliary heating unit>
The substrate heating apparatus 1 further includes an auxiliary heating unit that can selectively heat the cooling manifolds 52 and 53.
FIG. 10 is a diagram for explaining an example of heating control in the hot plate 5.
As shown in FIG. 10, a plurality of (for example, three in this embodiment) heating regions H1, H2, and H3 are arranged on the hot plate 5. Specifically, a first heating region H1 having a square shape in a plan view is disposed at the center of the hot plate 5 in the X direction. On the -X direction side of the hot plate 5 and near the first manifold 52, a second heating region H2 having a rectangular shape having a length in the Y direction in plan view is arranged. On the + X direction side of the hot plate 5 and near the second manifold 53, a third heating region H3 having substantially the same shape as the second heating region H2 is arranged. Note that the number of heating regions H1, H2, and H3 is not limited to three, and can be changed as appropriate.

  The hot plate 5 can selectively heat at least one of the first heating area H1, the second heating area H2, and the third heating area H3. The control unit 15 (see FIG. 1) controls the hot plate 5 to selectively heat at least one of the first heating region H1, the second heating region H2, and the third heating region H3. For example, when the temperature near the cooling manifolds 52 and 53 is likely to decrease, the control unit 15 controls the hot plate 5 and at least one of the vicinity of the first manifold 52 and the second manifold 53 (that is, in the hot plate 5). At least one of the second heating region H2 and the third heating region H3) is selectively heated. The second heating area H2 and the third heating area H3 in the hot plate 5 function as an auxiliary heating unit.

  In addition, the area | region which functions as an auxiliary heating part is not limited to the 2nd heating area | region H2 and the 3rd heating area | region H3. For example, the auxiliary heating unit may be a separate heater from the hot plate 5. Further, the auxiliary heating unit may be a combination of the area and the heater, and can be appropriately changed.

<Heating unit>
As shown in FIG. 2, the heating unit 80 includes a chamber heating unit 81, a vacuum piping heating unit 82, a gas supply piping heating unit 83, and a substrate loading / unloading unit heating unit 84. For example, the heating unit 80 includes a flexible planar heating element as a heating member of each component. For example, the sheet heating element is a rubber heater. The heating member is not limited to the rubber heater, and may be a hot plate, or may be a combination of a rubber heater and a hot plate, and can be appropriately changed.

  The heating unit 80 can selectively heat at least one of a chamber heating unit 81, a vacuum piping heating unit 82, a gas supply piping heating unit 83, and a substrate loading / unloading unit heating unit 84. The control unit 15 (see FIG. 1) controls the heating unit 80 to selectively select at least one of the chamber heating unit 81, the vacuum piping heating unit 82, the gas supply piping heating unit 83, and the substrate loading / unloading unit heating unit 84. Let it heat. For example, when the temperature of the inner surface of the vacuum pipe 3a is likely to decrease, the control unit 15 controls the heating unit 80 to selectively heat the vacuum pipe heating unit 82.

<Chamber heating unit>
The chamber heating unit 81 can heat at least a part of the inner surface of the chamber 2. In the embodiment, the chamber heating unit 81 is disposed only on the peripheral wall 23 of the chamber 2. The chamber heating section 81 is a planar heating element along the outer surface of the peripheral wall 23 of the chamber 2. In the embodiment, the chamber heating unit 81 covers the entire outer surface of the peripheral wall 23 of the chamber 2. For example, by heating the peripheral wall 23 of the chamber 2 with the chamber heating unit 81 covering the entire outer surface of the peripheral wall 23 of the chamber 2, the in-plane uniformity of the temperature of the inner surface of the peripheral wall 23 of the chamber 2 can be improved. it can.

  For example, the chamber heating unit 81 can heat the inner surface of the peripheral wall 23 of the chamber 2 so as to be in a range of 40 ° C. or more and 150 ° C. or less. From the viewpoint of suppressing the sublimate from adhering to the inner surface of the peripheral wall 23 of the chamber 2 when the polyimide forming liquid is applied to the substrate 10, the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is set to 75 ° C. or more and The temperature is preferably set to a range of 105 ° C. or lower, particularly preferably 90 ° C. The temperature of the inner surface of the peripheral wall 23 of the chamber 2 is not limited to the above range, but may be a range in which the fumes in the housing space 2S of the chamber 2 can be suppressed from being cooled on the inner surface of the peripheral wall 23 of the chamber 2 and becoming a sublimate. Should be set.

<Vacuum pipe heating section>
The vacuum pipe heating unit 82 can heat at least a part of the inner surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating unit 82 is a planar heating element along the outer surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating unit 82 covers the entire outer surface of the vacuum pipe 3a. For example, by heating the vacuum pipe 3a with the vacuum pipe heating unit 82 covering the entire outer surface of the vacuum pipe 3a, the in-plane uniformity of the temperature of the inner surface of the vacuum pipe 3a can be increased.

<Gas supply pipe heating section>
The gas supply pipe heating unit 83 can heat at least a part of the inner surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating unit 83 is a planar heating element along the outer surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating unit 83 covers the entire outer surface of the gas supply pipe 4a. For example, by heating the gas supply pipe 4a while covering the entire outer surface of the gas supply pipe 4a with the gas supply pipe heating unit 83, the in-plane uniformity of the temperature of the inner surface of the gas supply pipe 4a can be increased. .

<Substrate loading / unloading section heating section>
The substrate loading / unloading section heating section 84 can heat at least a part of the substrate loading / unloading section 24. In the embodiment, the substrate carrying-in / out section heating section 84 is a planar heating element that extends along the outer surface of the substrate carrying-in / out section 24. In the embodiment, the substrate loading / unloading section heating section 84 covers the entire outer surface of the substrate loading / unloading section 24.

<Insulation member>
The heat insulating member 26 covers at least a part of the chamber heating unit 81 from outside the chamber 2. In the embodiment, the heat insulating member 26 includes a chamber heat insulating member 26a, a vacuum pipe heat insulating member 26b, a gas supply pipe heat insulating member 26c, and a substrate carrying-in / out portion heat insulating member 26d. For example, the heat insulating member 26 includes a heat insulating material that covers the heating unit of each component. For example, the heat insulating material is a foam-based heat insulating material. The heat insulating material is not limited to the foam-based heat insulating material, and may be a fiber-based heat insulating material, or may have a structure in which air is interposed in a gap between a plurality of layers of sheet glass, and can be appropriately changed. .

  In the embodiment, the chamber heat insulating member 26a covers the entire outer surface of the chamber heating unit 81. The vacuum pipe heat insulating member 26b covers the entire outer surface of the vacuum pipe heating unit 82. The gas supply pipe heat insulating member 26c covers the entire outer surface of the gas supply pipe heating unit 83. The substrate carry-in / out portion heat insulating member 26d covers the entire outer surface of the substrate carry-in / out portion heating section 84.

<Cover member>
The cover member 27 covers at least a part of the heat insulating member 26 from outside the chamber 2. In the embodiment, the cover member 27 includes a chamber cover member 27a, a vacuum pipe cover member 27b, a gas supply pipe cover member 27c, and a substrate carry-in / out portion cover member 27d. For example, the cover member 27 includes a protective material that covers the heat insulating member of each component. For example, the protection member is made of metal. The protective material is not limited to metal and may be made of resin, and can be changed as appropriate.

  In the embodiment, the chamber cover member 27a covers the entire outer surface of the chamber heat insulating member 26a. The vacuum pipe cover member 27b covers the entire outer surface of the vacuum pipe heat insulating member 26b. The gas supply pipe cover member 27c covers the entire outer surface of the gas supply pipe heat insulating member 26c. The board carry-in / out portion cover member 27d covers the entire outer surface of the board carry-in / out portion heat insulating member 26d.

<Glass structure>
As shown in FIG. 2, the glass structure 90 (glass) includes a glass top plate 91, a glass bottom plate 92, and a glass peripheral wall 93. The glass structure 90 is provided so as to face each of the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2. For example, the glass structure is formed of neoceram. The glass structure 90 is not limited to neoceram, and may be formed of quartz glass. Further, the glass structure 90 may be formed of a combination of neoceram and quartz glass, and can be appropriately changed.

  For example, the quartz content of the glass structure 90 is 50% or more. The higher the content of quartz in the glass (closer to 100%), the higher the heat resistant temperature. From the viewpoint of improving the heat-resistant temperature of the glass structure 90, the content of quartz is preferably 70% or more, and more preferably 90% or more. Note that the quartz content of the glass structure 90 is not limited to the above range, and the heating temperature of the substrate 10 can be set in a wide range, so long as the heating temperature of the substrate 10 is hardly restricted. Good.

  For example, the infrared absorption of the glass structure 90 is 30% or more in the near-infrared wavelength region (1 μm or more and less than 2.5 μm), and is 90% or more in the far-infrared wavelength region (2.5 μm or more and 5 μm or less). . As the glass has a higher infrared absorptance (closer to 100%), the heating of the glass by the absorption of the infrared is promoted. From the viewpoint of promoting the heating of the glass structure 90, the near-infrared absorption is preferably 50% or more, more preferably 70% or more. In addition, it is preferable that the absorptivity of far infrared rays is 95% or more. In addition, the absorptivity of infrared rays of the glass structure 90 is not limited to the above range, but is in a range where the fumes in the storage space 2S of the chamber 2 can be suppressed from being cooled on the surface of the glass structure 90 and becoming a sublimate. It only has to be set.

  For example, the thickness t1 of the glass structure 90 is 0.5 mm or more and 10 mm or less. In FIG. 2, the thickness of the glass top plate 91 is shown as the thickness t1 of the glass structure 90. The glass top plate 91, the glass bottom plate 92, and the glass peripheral wall 93 constituting the glass structure 90 have substantially the same thickness. When the thickness of the glass is less than 0.5 mm, it is difficult to absorb infrared rays and the heating of the glass is difficult to be promoted. When the thickness of the glass exceeds 10 mm, it is difficult to conduct heat and the glass is easily broken. Therefore, from the viewpoint of obtaining a glass structure 90 in which heating is easily promoted and is hard to be broken, the thickness t1 of the glass structure 90 is preferably set in a range of 1 mm or more and 5 mm or less, particularly preferably 3 mm. . In addition, the thickness t1 of the glass structure 90 is not limited to the above range, and may be set in a range in which the attachment of the sublimate to the glass structure 90 can be suppressed.

For example, the thermal expansion coefficient of the glass structure 90 is 15 × 10 ⁻⁷ / K or less in a range of 0 ° C. or more and 750 ° C. or less. From the viewpoint of reducing the dimensional change of the glass structure 90 is preferably at most 10 × 10 ^{-7 /} K in thermal expansion coefficient range of 750 ° C. 0 ° C. or more glass structures 90, 5 × 10 ^- More preferably, it is ⁷ / K or less. The coefficient of thermal expansion of the glass structure 90 is not limited to the above range, and may be set within a range that can support the glass structure 90.

<Glass top plate>
The glass top plate 91 is disposed between the first surface 10a of the substrate 10 (the surface on which the solution is applied) and the facing surface 21a facing the first surface 10a in the chamber 2 (the lower surface of the top plate 21). The glass top plate 91 is disposed between the top plate 21 of the chamber 2 and the infrared heater 6. The glass top plate 91 is supported by the top plate 21 of the chamber 2. A support member (not shown) for the glass top plate 91 is provided between the glass top plate 91 and the top plate 21. The glass top plate 91 is fixed at a fixed position near the top plate 21 in the chamber 2.

  The glass top plate 91 has a rectangular plate shape having a length in the X direction. The glass top plate 91 is arranged at a distance G1 from the peripheral wall 23 of the chamber 2. The interval G1 is set to a size that allows the glass top plate 91 to thermally expand. Specifically, the interval G1 has a size capable of absorbing the expansion of the glass top plate 91 in the X direction. Although not shown, the distance between the glass top plate 91 and the peripheral wall 23 in the Y direction is set to be large enough to absorb the expansion of the glass top plate 91 in the Y direction.

<Glass bottom plate>
The glass bottom plate 92 is arranged on the upper surface of the bottom plate 22 of the chamber 2. The glass bottom plate 92 is supported by the bottom plate 22. The glass bottom plate 92 is fixed at a fixed position on the upper surface of the bottom plate 22 by a support member (not shown).

  The glass bottom plate 92 has a rectangular plate shape having a length in the X direction. The glass bottom plate 92 is arranged at a distance G2 from the peripheral wall 23 of the chamber 2. The interval G2 is set to a size that allows the thermal expansion of the glass bottom plate 92. Specifically, the interval G2 is set to a size capable of absorbing the expansion of the glass bottom plate 92 in the X direction. Although not shown, the distance between the glass bottom plate 92 and the peripheral wall 23 in the Y direction is set to be large enough to absorb the expansion of the glass bottom plate 92 in the Y direction.

<Glass surrounding wall>
The glass peripheral wall 93 is arranged at a position facing the peripheral wall 23 of the chamber 2. The glass peripheral wall 93 is supported by the peripheral wall 23. The glass peripheral wall 93 is fixed at a fixed position near the peripheral wall 23 by a support member (not shown).

  The glass peripheral wall 93 is arranged at an interval G2 from the peripheral wall 23. The lower end of the glass peripheral wall 93 is connected to the outer peripheral edge of the glass bottom plate 92. The glass peripheral wall 93 stands upward from the glass bottom plate 92. The glass peripheral wall 93 has a rectangular frame shape along the outer shape of the glass bottom plate 92. The upper portion of the glass peripheral wall 93 has an outer shape that avoids the substrate entrance 23a.

<Substrate heating method>
Next, the substrate heating method according to the present embodiment will be described. In the present embodiment, the substrate 10 is heated using the substrate heating device 1 described above. The operation performed in each section of the substrate heating apparatus 1 is controlled by the control section 15.

  FIG. 11 is a diagram for explaining an example of the operation of the substrate heating device 1 according to the first embodiment. FIG. 12 is an operation explanatory diagram of the substrate heating apparatus 1 according to the first embodiment, following FIG. FIG. 13 is an operation explanatory view of the substrate heating apparatus 1 according to the first embodiment, following FIG.

  For convenience, in FIGS. 11 to 13, among the components of the substrate heating apparatus 1, the substrate carry-in / out unit 24, the pressure adjustment unit 3, the gas supply unit 4, the gas diffusion unit 60, the temperature detection unit 9, the pressure detection unit 14, The illustration of the gas liquefaction and recovery unit 11, the cooling mechanism 50, the heating unit 80, the heat insulating member 26, the cover member 27, the glass structure 90, and the control unit 15 is omitted.

The substrate heating method according to the present embodiment includes an accommodation step, a substrate heating step, and a chamber heating step.
As shown in FIG. 11, in the housing step, the substrate 10 coated with the polyimide forming liquid is housed in the housing space 2S inside the chamber 2.

  In the accommodation step, the substrate 10 is arranged on the transport roller 8a. In the accommodation step, the hot plate 5 is located near the bottom plate 22. In the accommodation step, the hot plate 5 and the substrate 10 are separated to such an extent that the heat of the hot plate 5 is not transmitted to the substrate 10. In the accommodation step, the power supply of the hot plate 5 is turned on. For example, the temperature of the hot plate 5 is about 200 ° C. In the accommodation step, the power supply of the infrared heater 6 is turned off.

After the accommodation step, the process proceeds to the substrate heating step. In the substrate heating step, the substrate 10 is heated at an appropriate temperature while appropriately controlling the pressure of the atmosphere in the accommodation space 2S of the substrate 10. In the substrate heating step, the substrate 10 is heated using the hot plate 5 disposed on one side of the substrate 10 and the infrared heater 6 disposed on the other side of the substrate 10.
The substrate heating step includes a first heating step, a second heating step, and a third heating step.

  In the first heating step, the atmosphere in the accommodation space 2S of the substrate 10 is set to 1000 Pa or more. For example, in the first heating step, the atmosphere of the accommodation space 2S is set to the atmospheric pressure (1013 hPa). In the first heating step, the pressure in the chamber is increased so as to suppress the generation of sublimates in the process of forming the polyimide film. In the first heating step, the atmosphere in the accommodation space 2S can be set to 1000 Pa or more and the atmospheric pressure or less, or can be made higher than the atmospheric pressure.

In the first heating step, the substrate 10 is heated using the hot plate 5.
As shown in FIG. 12, in the first heating step, the hot plate 5 is moved upward, and the substrate 10 is placed on the hot plate side reflection surface 30 a of the infrared reflection unit 30.

  Specifically, the substrate 10 is supported by the substrate support protrusion 35 (see FIG. 3) provided on the hot plate side reflection surface 30a. Accordingly, the hot plate side reflection surface 30a is close to the second surface 10b of the substrate 10, so that the heat of the hot plate 5 is transmitted to the substrate 10 via the infrared reflection unit 30. For example, in the first heating step, the temperature of the hot plate 5 is maintained at 200 ° C. Therefore, the substrate temperature can be raised to 200 ° C. On the other hand, in the first heating step, the power of the infrared heater 6 remains off.

  In the first heating step, the hot plate 5 is located in the passage 8h (see FIG. 1). For convenience, in FIG. 12, the hot plate 5 before the movement (at the time of the accommodation step) is shown by a two-dot chain line, and the hot plate 5 after the movement (the position at the time of the first heating step) is shown by a solid line.

  In the first heating step, the substrate 10 is heated to a temperature of 25 ° C. or more and 250 ° C. or less with the atmosphere of the accommodation space 2S set to 1000 Pa or more (first heating control). Thereby, the molecular chain before imidization of the polyimide forming liquid applied to the substrate 10 is oriented. For example, in the first heating step, the substrate 10 is heated to 200 ° C. in a state where the atmosphere of the accommodation space 2S is set to the atmospheric pressure. For example, in the first heating step, the heating time of the substrate 10 is set to 0.5 min or more and 40 min or less.

  After the first heating step, in the second heating step, the atmosphere in the accommodation space 2S is set to 1 Pa or more and less than 1000 Pa. For example, in the second heating step, the atmosphere in the accommodation space 2S is set to 1 Pa or more and 20 Pa or less. In the second heating step, the pressure in the chamber is reduced until the polyimide forming liquid applied to the substrate 10 evaporates. In the second heating step, the atmosphere in the accommodation space 2S can be set to 500 Pa or less, 300 Pa or less, or 100 Pa or less.

  In the second heating step, the oxygen concentration in the atmosphere inside the chamber 2 is made as low as possible. For example, in the second heating step, the degree of vacuum in the chamber 2 is set to 20 Pa or less. Thereby, the oxygen concentration in the chamber 2 can be reduced to 100 ppm or less.

In the second heating step, the substrate 10 is heated using the infrared heater 6 provided independently of the hot plate 5.
As shown in FIG. 13, in the second heating step, the hot plate 5 is moved further above the position in the first heating step to bring the substrate 10 close to the infrared heater 6.

  For example, in the second heating step, the temperature of the hot plate 5 is maintained at 200 ° C. In the second heating step, the power supply of the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 600 ° C. Therefore, the substrate temperature can be raised to 600 ° C. In the second heating step, the substrate 10 is closer to the infrared heater 6 than in the first heating step, so that the heat of the infrared heater 6 is sufficiently transmitted to the substrate 10.

  In the second heating step, the hot plate 5 is located above the transport roller 8a (the passing portion 8h shown in FIG. 1) and below the infrared heater 6. For convenience, in FIG. 13, the hot plate 5 before the movement (the position in the first heating step) is shown by a two-dot chain line, and the hot plate 5 after the movement (the position in the second heating step) is shown by a solid line.

  In the second heating step, the substrate 10 is heated to a temperature higher than the highest attained temperature in the first heating step and equal to or lower than 550 ° C. in a state where the atmosphere of the accommodation space 2S is set to 1 Pa or more and less than 1000 Pa (second heating control). Thereby, the molecular chain before imidization of the polyimide forming liquid applied to the substrate 10 is oriented. Alternatively, the polyimide forming liquid is imidized. For example, in the second heating step, the substrate 10 is heated to 300 ° C. in a state where the atmosphere in the accommodation space 2S is set to 1 Pa or more and 20 Pa or less. In the second heating step, the substrate 10 is heated using the infrared heater 6 having a higher temperature rising rate than the hot plate 5 used in the first heating step. For example, in the second heating step, the temperature rising rate of the infrared heater 6 is set to 100 ° C./min or more. For example, in the second heating step, the heating time of the substrate 10 is set to 2 minutes or more and 40 minutes or less.

  After the second heating step, in the third heating step, the substrate 10 is heated to a temperature higher by at least 50 ° C. than the highest attained temperature in the second heating step with the atmosphere in the accommodation space 2S being 1 Pa or more and less than 1000 Pa. (Third heating control). Thereby, the molecular chains at the time of imidization of the polyimide forming liquid applied to the substrate 10 are re-oriented (the molecular chains are rearranged). For example, in the third heating step, the substrate 10 is heated to 500 ° C. in a state where the atmosphere in the accommodation space 2S is 1 Pa or more and 20 Pa or less. In the third heating step, the substrate 10 is heated using the infrared heater 6. In the third heating step, the heating time of the substrate 10 is set to 2 minutes or more and 40 minutes or less.

  In the second heating step and the third heating step, infrared rays toward the hot plate 5 are reflected by using the hot plate-side reflecting surface 30a disposed between the hot plate 5 and the infrared heater 6. This can prevent the hot plate 5 from absorbing infrared rays. At least a part of the infrared light reflected by the hot plate side reflection surface 30 a is absorbed by the substrate 10.

  In addition, in the second heating step and the third heating step, infrared rays are reflected on the chamber-side reflecting surface 2 a provided on the inner surface of the chamber 2. Thereby, the temperature uniformity in the chamber 2 can be improved. At least a part of the infrared light reflected by the chamber-side reflecting surface 2a is absorbed by the substrate 10.

  In addition, in the second heating step and the third heating step, the hot plate 5 is cooled. For example, in the second heating step and the third heating step, the refrigerant (air) is passed through the refrigerant passage section 51 disposed inside the heating section (see FIG. 9).

  After the third heating step, a cooling step of cooling the substrate 10 is performed. For example, in the cooling step, the substrate 10 is cooled from the temperature of the third heating step to a temperature at which the substrate 10 can be transported while maintaining the atmosphere of the third heating step or the low oxygen atmosphere. In the cooling step, the power of the infrared heater 6 is turned off. For example, in the cooling step, the substrate 10 is cooled until the substrate temperature becomes 250 ° C. or lower. For example, in the cooling step, the time for cooling the substrate 10 is set to 1 min to 5 min.

  Through the above steps, while performing the volatilization or imidization of the polyimide forming solution applied to the substrate 10, the rearrangement of the molecular chains during imidization of the polyimide forming solution applied to the substrate 10, A polyimide film can be formed.

In the embodiment, the following chamber heating step is performed from the viewpoint of suppressing the fumes in the accommodation space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 and becoming sublimates.
In the chamber heating step, at least a part of the inner surface of the chamber 2 is heated. In the embodiment, in the chamber heating step, the inner surface of the peripheral wall 23 of the chamber 2 is heated using the chamber heating unit 81 disposed on the peripheral wall 23 of the chamber 2 (see FIG. 2). For example, in the chamber heating step, heating is performed so that the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is in the range of 40 ° C. or more and 150 ° C. or less. For example, the chamber heating step is always performed at least during the substrate heating step.

The substrate heating method of the embodiment further includes a vacuum pipe heating step, a gas supply pipe heating step, and a substrate carrying-in / out section heating step.
In the vacuum pipe heating step, at least a part of the inner surface of the vacuum pipe 3a connected to the chamber 2 is heated. In the embodiment, in the vacuum pipe heating step, the inner surface of the vacuum pipe 3a is heated using the vacuum pipe heating unit 82 that covers the outer surface of the vacuum pipe 3a (see FIG. 2). For example, the vacuum pipe heating step is always performed at least during the substrate heating step.

  In the gas supply pipe heating step, at least a part of the inner surface of the gas supply pipe 4a is heated. In the embodiment, in the gas supply pipe heating step, the inner surface of the gas supply pipe 4a is heated using the gas supply pipe heating unit 83 that covers the outer surface of the gas supply pipe 4a (see FIG. 2). For example, the gas supply pipe heating step is always performed at least during the substrate heating step.

  In the substrate loading / unloading section heating step, at least a part of the substrate loading / unloading section 24 can be heated. In the embodiment, in the substrate loading / unloading section heating step, the substrate loading / unloading section 24 is heated using the substrate loading / unloading section heating section 84 covering the outer surface of the substrate loading / unloading section 24 (see FIG. 2). For example, the substrate loading / unloading section heating step is always performed at least during the substrate heating step.

<Relationship between mounting part of glass top plate and substrate>
Next, an arrangement relationship between the mounting portion of the glass top plate and the substrate according to the present embodiment will be described. In the present embodiment, the glass top plate 91 is suspended from the top plate 21 of the chamber 2 by a support member (not shown) (see FIG. 2).

FIG. 14 is a diagram for explaining an arrangement relationship between the mounting portion 95 of the glass top plate 91 and the substrate 10 according to the first embodiment. FIG. 14 is a plan view (bottom view) of the glass top plate 91 as viewed from the substrate 10 side.
As shown in FIG. 14, each of the glass top plate 91 and the substrate 10 has a rectangular plate shape having a length in the X direction. The outer shape of the glass top plate 91 is larger than the outer shape of the substrate 10. At four corners of the glass top plate 91, mounting portions 95 of a support member for suspending the glass top plate 91 are provided. The mounting portion 95 supports the glass top plate 91 by sandwiching it from above and below. The mounting part 95 is provided on the upper part of the chamber 2 (see FIG. 2). In a plan view, the mounting portion 95 is disposed at a position avoiding the substrate 10. The mounting portion 95 is disposed outside the corner of the substrate 10 in a plan view.

<Arrangement structure of glass peripheral wall and glass bottom wall>
Next, the arrangement structure of the glass peripheral wall and the glass bottom wall according to the present embodiment will be described. In the present embodiment, the glass peripheral wall 93 is integrally connected to the glass bottom wall 92 (see FIG. 2).

FIG. 15 is a diagram for explaining the arrangement structure of the glass peripheral wall 93 and the glass bottom plate 92 according to the first embodiment. In FIG. 15, illustration of the top plate 21 of the chamber 2 and the like are omitted.
As shown in FIG. 15, the glass peripheral wall 93 and the glass bottom plate 92 have a box shape that is opened upward by being integrally connected to each other. In FIG. 15, reference numeral 90A denotes a box-like body in which the glass peripheral wall 93 and the glass bottom plate 92 are integrated. The box-shaped body 90A has a size that can be installed on the upper surface of the bottom plate 22 of the chamber 2. An opening 93a is formed in a portion of the box-shaped body 90A facing the substrate carrying-in / out port 23a.

As described above, according to the present embodiment, the substrate heating device 1 is disposed in the chamber 2 in which the accommodation space 2S capable of accommodating the substrate 10 coated with the solution is formed, and in the accommodation space 2S. Substrate heating units 5 and 6 capable of heating the substrate 10, a glass structure 90 disposed at least between a solution application surface 10 a of the substrate 10 and a facing surface 21 a facing the application surface 10 a in the chamber 2; The following effects can be obtained by including.
According to this configuration, the coating surface of the substrate 10 includes at least the glass structure 90 disposed between the solution application surface 10a of the substrate 10 and the facing surface 21a facing the application surface 10a in the chamber 2. Since the fume (source of sublimate) traveling from 10a to the opposing surface 21a of the chamber 2 can be blocked by the glass structure 90, it is possible to suppress the adhesion of the sublimate to the opposing surface 21a of the chamber 2 (inside the chamber). it can. In addition, since the heat-resistant temperature (continuous use temperature) of glass is higher than that of resin, the heating temperature of the substrate 10 can be set in a wider range, and the heating temperature of the substrate 10 is not easily limited. Therefore, the heating temperature of the substrate 10 is less likely to be limited, and adhesion of sublimates to the inside of the chamber can be suppressed. For example, when the glass structure 90 is formed of neoceram, the heat-resistant temperature of neoceram is 750 ° C. or higher, so that the heating temperature of the substrate 10 can be set in a wider range.

  Further, the glass structure 90 having a quartz content of 50% or more can improve the heat-resistant temperature of the glass structure 90 as compared with the case where the quartz content is less than 50%. Therefore, the heating temperature of the substrate 10 can be set in a wider range, and the heating temperature of the substrate 10 is less likely to be limited.

Further, the absorptivity of infrared light of the glass structure 90 is 30% or more in a near infrared wavelength region (1 μm or more and less than 2.5 μm), and 90% or more in a far infrared wavelength region (2.5 μm or more and 5 μm or less). This has the following effects.
According to this configuration, the near-infrared absorptance of the glass structure 90 is 30% or more, so that the near-infrared absorptance of the glass structure 90 is less than 30%. Can promote the heating of the glass structure 90. In addition, since the glass structure 90 has a far-infrared absorptance of 90% or more, the glass structure 90 has a far-infrared absorptivity of less than 90%, and thus has a glass structure due to far-infrared absorption. Heating of the body 90 can be promoted. By promoting the heating of the glass structure 90 in this manner, fumes from the application surface 10a of the substrate 10 toward the facing surface 21a of the chamber 2 are prevented from being cooled on the surface of the glass structure 90 to become sublimates. be able to. Therefore, adhesion of the sublimate to the glass structure 90 can be suppressed.

  Further, since the substrate 10 is a substrate on which a solution for forming a polyimide is applied, the heating temperature of the substrate 10 is hardly restricted during the formation of the polyimide, and the sublimate is prevented from adhering to the inside of the chamber. Can be suppressed.

Further, the chamber 2 is located above the substrate 10 and forms a top surface 21 a that forms the facing surface 21 a, a bottom plate 22 that is located below the substrate 10 and faces the top plate 21, and a peripheral wall that surrounds the periphery of the substrate 10. The glass structure 90 includes the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2 and has the following effects.
According to this configuration, fumes from the application surface 10a of the substrate 10 to each of the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2 can be blocked by the glass structure 90. The sublimate can be prevented from adhering to each of the peripheral wall 22 and the peripheral wall 23.

The thickness t1 of the glass structure 90 is 0.5 mm or more and 10 mm or less, so that the following effects can be obtained.
According to this configuration, since the thickness t1 of the glass structure 90 is 0.5 mm or more, the thickness of the glass structure 90 is smaller than that of the case where the thickness t1 is less than 0.5 mm. Therefore, heating of the glass structure 90 is promoted, and adhesion of the sublimate to the glass structure 90 is easily suppressed. In addition, when the thickness t1 of the glass structure 90 is 10 mm or less, heat is easily transmitted as compared with the case where the thickness t1 of the glass structure 90 exceeds 10 mm, so that the glass structure 90 is not easily broken. .

Further, when the thermal expansion coefficient of the glass structure 90 is 15 × 10 ⁻⁷ / K or less in a range of 0 ° C. or more and 750 ° C. or less, the following effects are obtained.
Since the dimensional change of the glass structure 90 is smaller than the case where the thermal expansion coefficient of the glass structure 90 exceeds 15 × 10 ⁻⁷ / K in the range of 0 ° C. or more and 750 ° C. or less, the glass structure 90 is supported. It's easy to do. For example, when the glass structure 90 is supported by being sandwiched between support members, the generation of foreign matter due to friction between the glass structure 90 and the support member can be suppressed.

Further, the substrate heating units 5 and 6 include the infrared heater 6 supported by the top plate 21 of the chamber 2, and the glass top plate 91 is disposed between the top plate 21 and the infrared heater 6, The following effects are obtained.
According to this configuration, compared to the case where the glass top plate 91 is disposed between the substrate 10 and the infrared heater 6, the infrared rays from the infrared heater 6 toward the substrate 10 are less likely to be blocked by the glass top plate 91 (infrared rays). It is easy to directly heat the substrate 10), so that heating of the substrate 10 is easily promoted. By the way, in a method of heating a substrate by circulating hot air in an oven, there is a possibility that foreign matter may be wound up in the accommodation space of the substrate due to the circulation of hot air. On the other hand, according to this configuration, since the substrate 10 can be heated in a state where the atmosphere in the accommodation space 2S is depressurized, the risk of foreign matter being wound up in the accommodation space 2S can be reduced. Therefore, it is suitable for suppressing foreign substances from adhering to the inner surface of the chamber 2 or the substrate 10.

At the upper part of the chamber 2, a mounting part 95 for mounting the glass top plate 91 to the chamber 2 is provided, and the mounting part 95 is arranged at a position avoiding the substrate 10 in a plan view. It works.
According to this configuration, even when foreign matter is generated due to the rubbing between the glass top plate 91 and the attachment part 95, the foreign matter is removed from the substrate 10 as compared with the case where the mounting part 95 is arranged at a position overlapping the substrate 10 in plan view. Can be suppressed.

The substrate heating units 5 and 6 include a hot plate 5 disposed on one side of the substrate 10 and an infrared heater 6 disposed on the other side of the substrate 10 and capable of heating the substrate 10 with infrared rays. , The following effects are obtained.
According to this configuration, by arranging the infrared heater 6 on the other surface of the substrate 10, the heat generated from the infrared heater 6 is transmitted from the other surface of the substrate 10 to the one surface. Therefore, the heating by the hot plate 5 and the heating by the infrared heater 6 are combined, so that the substrate 10 can be more effectively heated. In addition, since the heating temperature of the substrate 10 can be made uniform within the surface of the substrate 10 by the hot plate 5 arranged on one surface side of the substrate 10, film characteristics can be improved. For example, by heating the substrate 10 in a state where one surface of the hot plate 5 is in contact with the second surface 10b of the substrate 10, the in-plane uniformity of the heating temperature of the substrate 10 can be improved.

  In addition, at least a part of the inner surface of the chamber 2 is formed as the chamber-side reflecting surface 2a that reflects infrared rays, so that the following effects are obtained. At least a part of the infrared light reflected by the chamber-side reflection surface 2a is absorbed by the substrate 10, so that the heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced based on the temperature rise of the substrate 10 due to the infrared light reflected by the chamber-side reflecting surface 2a.

  In addition, since the hot plate 5 can heat the substrate 10 in the range of 20 ° C. or more and 300 ° C. or less, the solvent removal of the polyimide forming liquid applied to the substrate 10 and the preliminary curing of the polyimide forming liquid are stabilized. You can do it. In addition, since the infrared heater 6 can heat the substrate 10 in the range of 200 ° C. or more and 600 ° C. or less, the polyimide forming liquid applied to the substrate 10 can be more stably cured. In addition, the rearrangement of molecular chains during imidization of the polyimide forming liquid can be stably performed, and the film characteristics can be further improved.

In addition, an infrared reflector 30 is disposed between the hot plate 5 and the infrared heater 6 and has a hot plate-side reflecting surface 30a that reflects infrared rays directed toward the hot plate 5; By including the mounting surface 5a on which the device 30 can be mounted, the following effects can be obtained.
According to this configuration, infrared rays are absorbed by the hot plate 5 by including the hot plate-side reflecting surface 30 a that is disposed between the hot plate 5 and the infrared heater 6 and reflects infrared rays toward the hot plate 5. This can prevent the temperature of the hot plate 5 from rising due to infrared rays. Therefore, it is not necessary to consider the time for cooling the hot plate 5 due to the temperature rise of the hot plate 5 by infrared rays. Therefore, the tact time required for lowering the temperature of the hot plate 5 can be reduced. In addition, at least a part of the infrared light reflected by the hot plate side reflection surface 30a is absorbed by the substrate 10, so that the heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced based on the temperature rise of the substrate 10 due to the infrared light reflected by the hot plate side reflection surface 30a. In addition, the hot plate 5 includes the mounting surface 5a on which the infrared reflecting unit 30 can be mounted, so that when the atmosphere of the accommodation space 2S is depressurized to a vacuum state, the mounting surface 5a of the hot plate 5 Vacuum insulation between the infrared reflection unit 30 and the infrared reflection unit 30 can be achieved. That is, the gap at the interface between the mounting surface 5a and the infrared reflecting portion 30 can function as a heat insulating layer. Therefore, the temperature rise of the hot plate 5 due to infrared rays can be suppressed. On the other hand, when nitrogen is supplied (N ₂ purge) to the storage space 2S, the vacuum insulation between the mounting surface 5a and the infrared reflecting unit 30 can be released. Therefore, when the temperature of the hot plate 5 is decreasing, it can be estimated that the temperature of the infrared reflecting section 30 is also decreasing.

  Also, the polyimide forming liquid is applied only to the first surface 10a of the substrate 10, and the hot plate 5 is disposed on the second surface 10b opposite to the first surface 10a of the substrate 10. The following effects are obtained. Since the heat generated from the hot plate 5 is transmitted from the second surface 10b of the substrate 10 to the first surface 10a, the substrate 10 can be effectively heated. In addition, while the substrate 10 is being heated by the hot plate 5, solvent removal of the polyimide forming liquid applied to the substrate 10, preliminary curing of the polyimide forming liquid, degassing during film formation, and the like are efficiently performed. be able to.

  Further, since both the hot plate 5 and the infrared heater 6 can heat the substrate 10 stepwise, the following effects are obtained. Compared with the case where the hot plate 5 and the infrared heater 6 can heat the substrate 10 only at a certain temperature, the substrate 10 is efficiently heated so as to conform to the curing conditions of the polyimide forming liquid applied to the substrate 10. can do. For example, the liquid for forming a polyimide applied to the substrate 10 can be dried stepwise and cured well.

  In addition, by including the position adjustment unit 7 that can adjust the relative position between the hot plate 5 and the infrared heater 6 and the substrate 10, the heating temperature of the substrate 10 can be adjusted as compared with the case where the position adjustment unit 7 is not provided. Easier to do. For example, when increasing the heating temperature of the substrate 10, the hot plate 5 and the infrared heater 6 are brought close to the substrate 10, and when decreasing the heating temperature of the substrate 10, the hot plate 5 and the infrared heater 6 are Can be separated from each other. Therefore, it becomes easy to heat the substrate 10 stepwise.

  In addition, the position adjusting unit 7 has the following effects by including the moving unit 7a that enables the substrate 10 to move between the hot plate 5 and the infrared heater 6. By moving the substrate 10 between the hot plate 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted in a state where at least one of the hot plate 5 and the infrared heater 6 is arranged at a fixed position. Therefore, since it is not necessary to separately provide a device that can move at least one of the hot plate 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted with a simple configuration.

  A transport unit 8 that can transport the substrate 10 is provided between the hot plate 5 and the infrared heater 6, and the transport unit 8 is formed with a passing unit 8h that can pass through the moving unit 7a. As a result, the following effects can be obtained. When the substrate 10 is moved between the hot plate 5 and the infrared heater 6, the substrate 10 can be passed through the passage portion 8h, so that it is not necessary to move the substrate 10 around the transporting portion 8. Therefore, it is not necessary to separately provide a device for moving the substrate 10 bypassing the transporting unit 8, and the substrate 10 can be smoothly moved with a simple configuration.

  In addition, the temperature of the substrate 10 can be grasped in real time by including the temperature detecting unit 9 capable of detecting the temperature of the substrate 10. For example, by heating the substrate 10 based on the detection result of the temperature detection unit 9, it is possible to suppress the temperature of the substrate 10 from deviating from a target value.

  In addition, since the substrate 10 and the substrate heating units 5 and 6 are housed in the common chamber 2, the heating process on the substrate 10 by the substrate heating units 5 and 6 can be performed in the common chamber 2. For example, in the common chamber 2, the heat treatment of the substrate 10 by the hot plate 5 and the heat treatment of the infrared heater 6 can be collectively performed. That is, unlike the case where the hot plate and the infrared heater are housed in different chambers, no time is required for transferring the substrate between two different chambers. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. Further, the size of the entire apparatus can be reduced as compared with the case where two different chambers are provided.

(Second embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS.
In the second embodiment, the configuration of the position adjustment unit 207 is particularly different from the first embodiment. 16 to 19, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
FIG. 16 is a view corresponding to FIG. 2 including a cross section of the heating unit 80, the heat insulating member 26, the cover member 27, and the glass structure 90 in the substrate heating apparatus 201 according to the second embodiment.

<Position adjuster>
As shown in FIG. 16, the position adjustment unit 207 includes a storage unit 270, a moving unit 275, and a driving unit 279.
The accommodation section 270 is arranged below the chamber 2. The accommodation section 270 can accommodate the moving section 275 and the driving section 279. The accommodation part 270 is formed in a rectangular parallelepiped box shape. Specifically, the accommodation portion 270 includes a first support plate 271 having a rectangular plate shape, a second support plate 272 having a rectangular plate shape facing the first support plate 271, a first support plate 271 and a second support plate 272. And a surrounding plate 273 which covers the moving part 275 and the driving part 279 so as to surround the moving part 275 and the driving part 279. Note that the surrounding plate 273 may not be provided. That is, the position adjustment unit 207 only needs to include at least the first support plate 271, the moving unit 275, and the driving unit 279. For example, an exterior cover that covers the entire device may be provided.

  The outer peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2. The first support plate 271 also functions as a bottom plate of the chamber 2. The hot plate 205 is disposed on the first support plate 271. Specifically, the hot plate 205 is supported by the first support plate 271 in the chamber 2.

  The surrounding plate 273 and the peripheral wall 23 are continuously connected vertically. The chamber 2 is configured to be able to accommodate the substrate 10 in a closed space. For example, the airtightness in the chamber 2 can be improved by connecting the connection portions of the top plate 21, the first support plate 271 as the bottom plate, and the peripheral wall 23 without any gap by welding or the like.

The moving section 275 includes a pin 276, a telescopic tube 277, and a base 278.
The pin 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a bar-shaped member extending vertically. The tip (upper end) of the pin 276 can be in contact with the second surface 10 b of the substrate 10 and can be separated from the second surface 10 b of the substrate 10.

  The plurality of pins 276 are provided at intervals in a direction (X direction and Y direction) parallel to the second surface 10b. The plurality of pins 276 are formed to have substantially the same length. The tips of the pins 276 are arranged in a plane parallel to the second surface 10b (in the XY plane).

  The telescopic tube 277 is provided between the first support plate 271 and the base 278. The telescopic tube 277 is a tubular member that covers the pin 276 and extends vertically. The telescopic tube 277 is vertically extensible between the first support plate 271 and the base 278. For example, the telescopic tube 277 is a vacuum bellows.

  A plurality of telescopic tubes 277 are provided in the same number as the plurality of pins 276. The tips (upper ends) of the plurality of telescopic tubes 277 are fixed to the first support plate 271. Specifically, the first support plate 271 has a plurality of insertion holes 271h that open the first support plate 271 in the thickness direction. The inner diameter of each insertion hole 271h is substantially the same as the outer diameter of each telescopic tube 277. For example, the distal end of each telescopic tube 277 is fitted and fixed in each insertion hole 271h of the first support plate 271.

  The base 278 is a plate-shaped member facing the first support plate 271. The upper surface of the base 278 forms a flat surface along the second surface 10 b of the substrate 10. The base ends (lower ends) of the plurality of pins 276 and the base ends (lower ends) of the plurality of telescopic tubes 277 are fixed to the upper surface of the base 278.

  The tips of the plurality of pins 276 can be inserted through the hot plate 205. The hot plate 205 is connected to the normal of the second surface 10b at a position where the hot plate 205 overlaps the insertion holes 271h (the internal spaces of the telescopic tubes 277) of the first support plate 271 in the normal direction of the second surface 10b. A plurality of insertion holes 205h that open in the direction (the thickness direction of the hot plate 205) are formed.

  The tips of the plurality of pins 276 can be inserted through the infrared reflecting section 230. In the infrared reflecting portion 230, the infrared reflecting portion 230 is connected to the insertion hole 271h (the internal space of each telescopic tube 277) of the first support plate 271 in the direction normal to the second surface 10b. A plurality of insertion holes 230h that open in the normal direction (the thickness direction of the infrared reflection plate) are formed.

  The tips of the plurality of pins 276 can be brought into contact with the second surface 10b of the substrate 10 through the internal space of each telescopic tube 277, each insertion hole 205h of the hot plate 205, and each insertion hole 230h of the infrared reflection unit 230. Have been. Therefore, the substrate 10 is supported by the tips of the plurality of pins 276 in parallel with the XY plane. The plurality of pins 276 move in the Z direction inside the chamber 2 while supporting the substrate 10 housed in the chamber 2 (see FIGS. 17 to 19).

  The driving section 279 is arranged in the housing section 270 outside the chamber 2. Therefore, even if particles are generated due to the driving of the driving section 279, the invasion of particles into the chamber 2 can be avoided by making the inside of the chamber 2 a closed space.

<Substrate heating method>
Next, the substrate heating method according to the present embodiment will be described. In the present embodiment, the substrate 10 is heated using the substrate heating device 201 described above. The operation performed in each section of the substrate heating apparatus 201 is controlled by the control section 15. The detailed description of the same steps as those in the first embodiment is omitted.

  FIG. 17 is a diagram for explaining an example of the operation of the substrate heating device 201 according to the second embodiment. FIG. 18 is an operation explanatory view of the substrate heating apparatus 201 according to the second embodiment, following FIG. FIG. 19 is an operation explanatory diagram of the substrate heating apparatus 201 according to the second embodiment, following FIG.

  For convenience, in FIGS. 17 to 19, among the components of the substrate heating device 201, the substrate carry-in / out unit 24, the pressure adjustment unit 3, the gas supply unit 4, the gas diffusion unit 60, the temperature detection unit 9, the pressure detection unit 14, The illustration of the gas liquefaction and recovery unit 11, the cooling mechanism 50, the heating unit 80, the heat insulating member 26, the cover member 27, the glass structure 90, and the control unit 15 is omitted.

The substrate heating method according to the present embodiment includes an accommodation step, a substrate heating step, and a chamber heating step.
As shown in FIG. 17, in the housing step, the substrate 10 coated with the polyimide forming liquid is housed in the housing space 2S inside the chamber 2.

  In the accommodation step, the substrate 10 is separated from the hot plate 205. Specifically, the tips of the plurality of pins 276 abut the second surface 10b of the substrate 10 through the internal space of each telescopic tube 277, each insertion hole 205h of the hot plate 205, and each insertion hole 230h of the infrared reflection unit 230. At the same time, the substrate 10 is separated from the hot plate 205 by raising the substrate 10. In the accommodation step, the hot plate 205 and the substrate 10 are separated to such an extent that the heat of the hot plate 205 is not transmitted to the substrate 10. In the accommodation step, the power of the hot plate 205 is turned on. In the accommodation step, the power supply of the infrared heater 6 is turned off.

After the accommodation step, the process proceeds to the substrate heating step. In the substrate heating step, the substrate 10 is heated using the hot plate 205 disposed on one side of the substrate 10 and the infrared heater 6 disposed on the other side of the substrate 10.
The substrate heating step includes a first heating step, a second heating step, and a third heating step.

In the first heating step, the substrate 10 is heated using the hot plate 205.
As shown in FIG. 18, in the first heating step, the tips of the plurality of pins 276 are separated from the second surface 10 b of the substrate 10 so that the substrate 10 is placed on the hot plate side reflection surface 230 a of the infrared reflection unit 230. Let it. Specifically, the substrate 10 is supported by a substrate support protrusion (not shown) provided on the hot plate side reflection surface 230a. Accordingly, the hot plate side reflection surface 230a is close to the second surface 10b of the substrate 10, so that the heat of the hot plate 205 is transmitted to the substrate 10 via the infrared reflection unit 230. For example, in the first heating step, the power supply of the infrared heater 6 remains off.

After the first heating step, in the second heating step, the substrate 10 is heated using the infrared heater 6 provided independently of the hot plate 205.
As shown in FIG. 19, in the second heating step, the substrate 10 is brought closer to the infrared heater 6 by further raising the substrate 10 from the position in the first heating step. In the second heating step, the power of the infrared heater 6 is turned on. In the second heating step, the substrate 10 is closer to the infrared heater 6 than in the first heating step, so that the heat of the infrared heater 6 is sufficiently transmitted to the substrate 10.

Thereafter, by performing the same steps as in the first embodiment, the polyimide forming liquid applied to the substrate 10 is volatilized or imidized, and the molecules of the polyimide forming liquid applied to the substrate 10 at the time of imidization are immobilized. Chain rearrangement can be performed to form a polyimide film.
In addition, from the viewpoint of suppressing the fumes in the storage space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 and becoming sublimates, the same chamber heating process as in the first embodiment is performed.

  As described above, according to the present embodiment, the moving unit 275 includes the plurality of pins 276 that can support the second surface 10b of the substrate 10 and can move in the normal direction of the second surface 10b. Are arranged in a plane parallel to the second surface 10b, the following effects can be obtained. Since the substrate 10 can be heated while the substrate 10 is stably supported, the polyimide forming liquid applied to the substrate 10 can be cured stably.

  The hot plate 205 is formed with a plurality of insertion holes 205h that open the hot plate 205 in the normal direction of the second surface 10b. The tip of each pin 276 is connected to the second surface 10h through the insertion hole 205h. The following effects are achieved by being able to abut on 10b. Since the transfer of the substrate 10 between the plurality of pins 276 and the hot plate 205 can be performed in a short time, the heating temperature of the substrate 10 can be adjusted efficiently.

Note that the shapes, combinations, and the like of the constituent members shown in the above-described examples are merely examples, and can be variously changed based on design requirements and the like.
For example, in the above embodiment, the substrate heating unit includes a hot plate disposed on one side of the substrate and an infrared heater disposed on the other side of the substrate and capable of heating the substrate with infrared rays. However, it is not limited to this. For example, the substrate heating section may include only a hot plate disposed on one side of the substrate, or may include only an infrared heater disposed on the other side of the substrate. That is, the substrate heating unit may be arranged on at least one of one side and the other side of the substrate.

  In the above embodiment, the glass structure 90 is provided so as to face each of the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2, but is not limited thereto. For example, the glass structure may be provided so as to face only the top plate 21 of the chamber 2. That is, the substrate heating device only needs to include glass disposed at least between the solution application surface 10a of the substrate 10 and the facing surface 21a facing the application surface 10a in the chamber 2. The glass may be provided on at least a part of the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2.

  Further, in the above-described embodiment, the glass top plate 91 is arranged at an interval from the top plate 21 of the chamber 2, but is not limited thereto. For example, the glass top plate 91 may be in contact with the top plate 21. In addition, although the glass peripheral wall 93 is arranged at an interval from the peripheral wall 23 of the chamber 2, it is not limited to this. For example, the glass peripheral wall 93 may be in contact with the peripheral wall 23.

  Further, in the above embodiment, the glass structure 90 is formed of a combination of glass plates, but is not limited to this. For example, the glass structure may be a film coated on the inner surface of the chamber.

Further, in the above embodiment, the substrate heating method includes the accommodation step, the substrate heating step, and the chamber heating step, but is not limited thereto. For example, the substrate heating method may further include a preheating step. In the preheating step, before the first heating step (specifically, before the accommodation step), the chamber is preheated to a temperature of 100 ° C. or more and 250 ° C. or less (preliminary heating control). According to this method, since the heating condition in the first heating step can be immediately shifted to, the first heating step can be stably performed in a short time.
For example, in the preheating step, the chamber may be preheated to the highest temperature (for example, 200 ° C.) in the first heating step.

  Further, in the above embodiment, the chamber heating unit is disposed only on the peripheral wall of the chamber, but is not limited to this. For example, the chamber heating unit may be arranged on the top plate and the bottom plate of the chamber in addition to the peripheral wall of the chamber. That is, the chamber heating unit only needs to be able to heat at least a part of the inner surface of the chamber.

  Further, in the above embodiment, the infrared reflecting portion having the reflecting surface is provided, but the present invention is not limited to this. For example, the upper surface of the hot plate may be a reflection surface that reflects infrared light without the infrared reflection portion.

  Further, in the above embodiment, the substrate, the hot plate, and the infrared heater are housed in the common chamber, but the invention is not limited to this. For example, the hot plate and the infrared heater may be housed in different chambers.

  In the above embodiment, both the hot plate and the infrared heater can heat the substrate in a stepwise manner, but the present invention is not limited to this. For example, at least one of the hot plate and the infrared heater may be capable of heating the substrate stepwise. Further, both the hot plate and the infrared heater may be capable of heating the substrate only at a certain temperature.

  Further, in the above embodiment, a plurality of transport rollers are used as the transport unit, but the present invention is not limited to this. For example, a belt conveyor or a linear motor actuator may be used as the transport unit. For example, the belt conveyor and the linear motor actuator may be able to be extended in the X direction. Thereby, the transport distance of the substrate in the X direction can be adjusted.

  When a configuration other than the configuration illustrated in FIG. 5 (the configuration in which the passing unit is formed in the transport unit) is adopted as the transport unit, the size of the hot plate in plan view is equal to or larger than the size of the substrate in plan view. There may be. Thereby, the in-plane uniformity of the heating temperature of the substrate can be further improved as compared with the case where the planar size of the hot plate is smaller than the planar size of the substrate.

  In the above embodiment, the power supply of the hot plate is turned on and the power supply of the infrared heater is turned off in the accommodation step and the first heating step, but the present invention is not limited to this. For example, in the accommodation step and the first heating step, the power of the hot plate and the infrared heater may be turned on.

  Further, in the first embodiment, the example in which the substrate heating step includes three heating steps of the first heating step, the second heating step, and the third heating step has been described, but the substrate heating step is not limited thereto. For example, the substrate heating step may include only two heating steps, a first heating step and a second heating step, or may include four or more heating steps.

  Further, in the second embodiment, the tips of the plurality of pins can be inserted through the infrared reflecting portion (that is, the infrared reflecting portion is formed with a plurality of insertion holes), but is not limited thereto. . For example, the tips of the plurality of pins may not be able to pass through the infrared reflecting portion. That is, the through-hole may not be formed in the infrared reflecting portion. In this case, the tips of the plurality of pins can be brought into contact with the back surface of the infrared reflecting portion via the internal space of each telescopic tube and each insertion hole of the hot plate. Therefore, the tip ends of the plurality of pins support the infrared reflecting portion in parallel with the XY plane. The plurality of pins move in the Z direction in the chamber while supporting a substrate housed in the chamber via the infrared reflection unit.

Further, the present invention may be applied to a substrate processing system including the substrate heating device of the above embodiment. For example, a substrate processing system is a system that is used by being incorporated in a production line such as a factory, and forms a thin film on a predetermined region of a substrate. Although not shown, for example, the substrate processing system is a unit in which a substrate processing unit including the above-described substrate heating device and a carry-in cassette containing a substrate before processing are supplied and an empty carry-in cassette is collected. A substrate carry-in unit, a substrate carry-out unit in which a carry-out cassette containing processed substrates is collected and an empty carry-out cassette is supplied, and a substrate carry-in unit between the substrate processing unit and the substrate carry-in unit. The transport unit includes a transport unit that transports the cassette and transports the unloading cassette between the substrate processing unit and the substrate unloading unit, and a control unit that performs overall control of each unit.
According to this configuration, by including the substrate heating device, in the substrate processing system, the heating temperature of the substrate is less likely to be limited, and the adhesion of sublimates to the inside of the chamber can be suppressed.

  In addition, each component described as the embodiment or the modified example thereof can be appropriately combined without departing from the gist of the present invention, and a part of the plurality of combined components is included. May not be used as appropriate.

  1,201: substrate heating device 2: chamber 2S: accommodation space 5, 205: hot plate (substrate heating unit) 6: infrared heater (substrate heating unit) 10: substrate 10a: first surface (coated surface) 21: top plate Reference numeral 22: bottom plate 23: peripheral wall 21a: facing surface 90: glass structure (glass) 91: glass top plate (glass) 92: glass bottom plate (glass) 93: glass peripheral wall (glass) 95: mounting portion t1: glass structure Thickness (glass thickness)

Claims (10)

A chamber in which an accommodation space capable of accommodating the substrate coated with the solution is formed,
A substrate heating unit arranged in the housing space and capable of heating the substrate,
A substrate heating apparatus, comprising: a glass disposed at least between an application surface of the substrate on which the solution is applied and an opposing surface of the chamber opposing the application surface. The substrate heating device according to claim 1, wherein the glass has a quartz content of 50% or more. The infrared absorptance of the glass is 30% or more in a near infrared wavelength region (1 μm or more and less than 2.5 μm) and 90% or more in a far infrared wavelength region (2.5 μm or more and 5 μm or less). 3. The substrate heating device according to 2. The substrate heating device according to claim 1, wherein the substrate is a substrate on which a solution for forming a polyimide is applied. The chamber is
A top plate located above the substrate and forming the facing surface;
A bottom plate located below the substrate and facing the top plate,
A peripheral wall surrounding the periphery of the substrate,
The substrate heating device according to claim 1, wherein the glass is provided on each of the top plate, the bottom plate, and the peripheral wall of the chamber. The substrate heating device according to claim 1, wherein a thickness of the glass is 0.5 mm or more and 10 mm or less. The substrate heating apparatus according to any one of claims 1 to 6, wherein a thermal expansion coefficient of the glass is 15 ^10-7 / K or less in a range of 0C or more and 750C or less. The substrate heating unit includes an infrared heater supported on a top plate of the chamber,
The substrate heating device according to claim 1, wherein the glass is disposed between the top plate and the infrared heater. At the top of the chamber, a mounting portion for attaching the glass to the chamber is provided,
The substrate heating device according to any one of claims 1 to 8, wherein the mounting portion is arranged at a position avoiding the substrate in plan view.   A substrate processing system comprising the substrate heating device according to claim 1.

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