JP6718950B2 - Substrate heating device and method for manufacturing polyimide film - Google Patents

Description

The present invention relates to a substrate heating device and a method for manufacturing a polyimide film .

In recent years, as a substrate for electronic devices, there is a market need for a resin substrate having flexibility instead of a glass substrate. For example, such a resin substrate uses a polyimide film. For example, the polyimide film is formed by applying a solution of a polyimide precursor to a substrate and then heating the substrate (heating step). For example, as a polyimide precursor solution, there is a polyamic acid varnish composed of a polyamic acid and a solvent (see, for example, Patent Document 1 and Patent Document 2).

JP, 2001-210632, A International Publication No. 2009/104371 JP, 2006-170524, A

By the way, the above heating step includes a first step of evaporating the solvent at a relatively low temperature and a second step of curing the polyamic acid at a relatively high temperature. In the second step, it is possible to use an infrared heater capable of heating the substrate with infrared rays. For example, as an infrared heater, a heater having a W type or a U type is known (for example, see Patent Document 3). However, in the W-type and U-type infrared heaters, the part that is bent so as to project outward is exposed, and the exposed part cools down more than other parts, improving the temperature distribution balance of the infrared heater. There was a problem in doing it.

In view of the circumstances as described above, an object of the present invention is to provide a substrate heating device, a substrate heating method, and an infrared heater capable of improving the balance of the temperature distribution of the infrared heater.

A substrate heating apparatus according to an aspect of the present invention includes a decompression unit that decompresses an atmosphere of a storage space of a substrate coated with a solution, and an infrared heater capable of heating the substrate with infrared rays. While having a tubular shape that is bent at a location, a bend portion that is bent to be convex outward, and a cover portion that is arranged to cover at least a part of the bend portion from the outside, Characterize.

According to this configuration, since the infrared heater includes the cover portion arranged to cover at least a part of the bend portion from the outside, it is possible to prevent the bend portion from being exposed. It is possible to suppress lowering of the temperature than the portion. That is, since at least a part of the bend part can be heated from the outside by the cover part, it is possible to suppress a temperature difference between the bend part and the other part. Therefore, the balance of the temperature distribution of the infrared heater can be improved.

In the above substrate heating device, the infrared heater has a longitudinal direction in a first direction, further includes a plurality of straight portions arranged side by side in a second direction intersecting the first direction, the bend portion, The end portions of two adjacent straight portions may be connected to each other, and the cover portion may linearly extend in the second direction so as to cover the plurality of bend portions from the outside.
According to this configuration, since the cover portion linearly extends in the second direction so as to cover the plurality of bend portions from the outside, it is possible to collectively prevent the plurality of bend portions from being exposed. Therefore, it is possible to collectively prevent the temperature of the plurality of bend portions from lowering than that of the other portions. That is, since the plurality of bend portions can be collectively heated from the outside by the cover portion, it is possible to suppress a temperature difference between the plurality of bend portions and other portions. Therefore, the balance of the temperature distribution of the infrared heater can be efficiently improved. In addition, the infrared heater further includes a plurality of straight portions that are long in the first direction and are arranged side by side in the second direction that intersects the first direction, so that the plurality of straight portions are adjacent to each other. Since it is possible to increase the heat generation temperatures of each other, the balance of the temperature distribution of the infrared heater can be improved at a high temperature.

In the above substrate heating device, the distance between the cover portion and the bend portion may be smaller than the distance between two adjacent straight portions.
With this configuration, it is possible to more reliably prevent the bend portion from being exposed, as compared with the case where the distance between the cover portion and the bend portion is equal to or greater than the distance between two adjacent straight portions. Therefore, it is possible to more reliably suppress the temperature decrease in the bend portion compared to the other portions. That is, since at least a part of the bend part can be more reliably heated from the outside by the cover part, it is possible to more reliably suppress the temperature difference between the bend part and the other part. Therefore, the balance of the temperature distribution of the infrared heater can be more surely improved.

In the above substrate heating device, the infrared heater further includes a first introduction part provided at one end of the infrared heater, and a second introduction part provided at the other end of the infrared heater. At least one of the introduction part and the second introduction part may be provided at an end of the cover part.
By the way, if the first introduction part and the second introduction part are too close to each other, the temperature of the part tends to be lower than the temperature of the other part. However, according to this configuration, since the first introduction part and the second introduction part are separated from each other to some extent, it is possible to suppress the temperature of the infrared heater from being locally lowered. Therefore, the balance of the temperature distribution of the infrared heater can be improved.

In the above substrate heating device, the outer shape of the infrared heater has a rectangular shape in a plan view, and the first introducing portion and the second introducing portion are arranged to face each other at a central portion of one side of the infrared heater. May be.
According to this configuration, the first introduction part and the second introduction part are separated from each other to some extent, so that the infrared heater can be prevented from locally lowering the temperature. Therefore, the balance of the temperature distribution of the infrared heater can be improved.

In the above substrate heating device, the outer shape of the infrared heater has a rectangular shape in a plan view, the first introducing portion is arranged on one side of one side of the infrared heater, and the second introducing portion is the one side. It may be arranged on the other side of.
According to this configuration, a portion of the infrared heater from the first introduction portion or the second introduction portion to the bend portion is bent in two places in a U-shaped tube (that is, the one side of the infrared heater is The shape of the infrared heater can be increased compared to the case of the straight tubular shape and the L-shaped tubular shape. Therefore, even if the one side of the infrared heater thermally expands or contracts, the flexibility of the infrared heater allows the one side expansion or contraction.

In the above substrate heating device, the outer shape of the infrared heater has a rectangular shape in a plan view, the first introduction portion is arranged at one corner portion of the infrared heater, and the second introduction portion is formed at one corner portion. You may arrange|position in a diagonal part.
With this configuration, the arrangement positions of the first introduction portion and the second introduction portion are point-symmetrical with respect to the center of the infrared heater in plan view, and the first introduction portion and the second introduction portion are far apart from each other. With this, even when the temperature of the first introduction part and the second introduction part is lower than that of the other part, the temperature lowering temperature of each other is not lowered, and the infrared heater is prevented from locally excessively lowering the temperature. Therefore, the balance of the temperature distribution of the infrared heater can be improved as much as possible.

In the above substrate heating device, the infrared heater may have a point-symmetrical shape in a plan view.
With this configuration, it is possible to more reliably improve the balance of the temperature distribution of the infrared heater, as compared with the case where the infrared heater has an asymmetrical shape in a plan view.

In the above substrate heating device, the outer shape of the infrared heater has a rectangular shape in a plan view, and the first introduction part and the second introduction part may be arranged adjacent to a corner of the infrared heater. Good.
According to this configuration, the distance between the first introduction part and the second introduction part is minimized, so that thermal expansion or contraction of the infrared heater can be suppressed as much as possible.

In the above substrate heating device, at least a part of the first introduction part and the second introduction part may enter the outer shape of the infrared heater in a plan view.
According to this configuration, when the infrared heater is arranged, it is possible to avoid the first introducing portion and the second introducing portion from interfering with each other, and thus it is possible to increase the degree of freedom in layout. For example, when laying a plurality of infrared heaters on one surface, it is possible to prevent two adjacent infrared heaters from interfering with each other in the first introduction part and the second introduction part, so that it is possible to lay the plurality of infrared heaters orderly. it can.

The substrate heating apparatus may further include a heater unit configured by laying a plurality of the infrared heaters on one surface.
According to this configuration, since the infrared heater is provided, the balance of the temperature distribution of the heater unit can be improved. In addition, when multiple infrared heaters can be individually controlled, the output of some infrared heaters can be made larger than the output of other infrared heaters, so that heating with a good temperature distribution for the substrate is possible. It can be performed. For example, if the temperature of the four corners of the substrate is low, the output of the infrared heaters located at the corresponding positions is made higher than the output of the other infrared heaters to raise the temperature only in those parts and to increase the temperature of the entire substrate. The temperature distribution can be improved.

In the above substrate heating apparatus, the heater unit includes a plurality of first infrared heaters arranged in a line in one direction, and a plurality of second infrared heaters arranged in a direction parallel to the one direction. In addition, the second infrared heater may be arranged so as to be adjacent to a boundary portion between two adjacent first infrared heaters in a direction intersecting with the one direction so as to be spread over the first infrared heater.
According to this configuration, the temperature distribution of the first infrared heater and the temperature distribution of the second infrared heater can be complemented with each other, so that the balance of the temperature distribution of the heater unit can be further improved.

In the above substrate heating device, the second infrared heater may have the same shape as the first infrared heater in plan view.
With this configuration, it is possible to more reliably improve the balance of the temperature distribution of the heater unit, as compared with the case where the second infrared heater has a shape different from that of the first infrared heater in plan view. In addition, even if the substrate size is changed, it is possible to heat the substrate with a good temperature distribution by changing the number of infrared heaters and arranging the infrared heaters at equal intervals. By the way, when the infrared heater is a simple straight tube, it is necessary to extend the length of the straight tube as the substrate size increases, and thus it may be difficult to allow thermal expansion of the infrared heater. However, according to this structure, since the size of the infrared heater does not change even when the size of the substrate increases, thermal expansion of the infrared heater can be easily allowed.

In the above substrate heating device, the second infrared heater may have a shape obtained by rotating the first infrared heater by 90 degrees in a plan view.
According to this configuration, the temperature distribution due to the shape of the infrared heater can be complemented by the first infrared heater and the second infrared heater, so the balance of the temperature distribution of the heater unit can be further improved. ..

The substrate heating apparatus may further include a heating unit which is arranged on the opposite side of the infrared heater with the substrate interposed therebetween and which is capable of heating the substrate.
According to this configuration, the heating by the heating unit and the heating by the infrared heater are combined, so that the substrate can be heated more effectively.

The substrate heating apparatus may further include a chamber capable of housing the substrate, the heating unit, and the infrared heater.
According to this configuration, since the heating temperature of the substrate can be controlled in the chamber, the substrate can be effectively heated.

In the above substrate heating device, the substrate, the heating unit, and the infrared heater may be housed in a common chamber.
With this configuration, it is possible to collectively perform the heating process on the substrate by the heating unit and the heating process by the infrared heater in the common chamber. That is, unlike the case where the heating unit and the infrared heater are housed in different chambers, no time is required to transfer the substrate between the two different chambers. Therefore, the heat treatment of the substrate can be performed more efficiently. In addition, the entire apparatus can be downsized as compared with the case where two different chambers are provided.

In the above substrate heating device, the solution is applied only to the first surface of the substrate, the heating unit is disposed on the side of the second surface opposite to the first surface of the substrate. Good.
According to this configuration, the heat generated from the heating unit is transferred from the second surface side of the substrate toward the first surface side, so that the substrate can be effectively heated. In addition, while the substrate is being heated by the heating unit, the solution applied to the substrate can be efficiently volatilized or imidized (for example, degassing during film formation).

In the above substrate heating device, at least one of the heating unit and the infrared heater may be capable of heating the substrate stepwise.
According to this configuration, the substrate is efficiently heated so as to meet the film forming conditions of the solution applied to the substrate, as compared with the case where the heating unit and the infrared heater can heat the substrate only at a constant temperature. be able to. Therefore, the solution applied to the substrate can be dried stepwise and cured well.

The above substrate heating apparatus may further include a position adjusting unit that can adjust the relative position of at least one of the heating unit and the infrared heater and the substrate.
According to this configuration, it becomes easier to adjust the heating temperature of the substrate, as compared with the case where the position adjusting unit is not provided. For example, when the heating temperature of the substrate is raised, the heating unit and the infrared heater can be brought close to the substrate, and when the heating temperature of the substrate is lowered, the heating unit and the infrared heater can be moved away from the substrate. Therefore, it becomes easier to heat the substrate step by step.

In the above substrate heating device, the position adjusting unit may include a moving unit that allows the substrate to move between the heating unit and the infrared heater.
According to this configuration, by moving the substrate between the heating unit and the infrared heater, the heating temperature of the substrate can be adjusted while at least one of the heating unit and the infrared heater is arranged at a fixed position. Therefore, since it is not necessary to separately provide a device that can move at least one of the heating unit and the infrared heater, the heating temperature of the substrate can be adjusted with a simple configuration.

In the above-mentioned substrate heating device, a transfer unit capable of transferring the substrate is provided between the heating unit and the infrared heater, and the transfer unit allows passage of the transfer unit. The part may be formed.
According to this configuration, when the substrate is moved between the heating unit and the infrared heater, it is possible to pass the passing unit, so that it is not necessary to move the substrate around the transfer unit. Therefore, since it is not necessary to separately provide a device for moving the substrate around the transport section, it is possible to smoothly move the substrate with a simple configuration.

In the above substrate heating device, the moving unit includes a plurality of pins that can support a second surface opposite to the first surface of the substrate and that can move in a direction normal to the second surface, The tip of the pin may be arranged in a plane parallel to the second plane.
According to this configuration, the substrate can be heated while being stably supported, so that the solution applied to the substrate can be stably formed into a film.

In the above substrate heating device, the heating unit is formed with a plurality of insertion holes that open the heating unit in a direction normal to the second surface, and the tips of the plurality of pins are inserted into the plurality of insertion holes. The second surface may be contactable via a hole.
According to this structure, since the substrate can be transferred between the plurality of pins and the heating unit in a short time, the heating temperature of the substrate can be efficiently adjusted.

In the above substrate heating device, the heating unit may be a hot plate.
According to this structure, the heating temperature of the substrate can be made uniform within the surface of the substrate, so that the film characteristics can be improved. For example, by heating the substrate in a state where one surface of the hot plate and the second surface of the substrate are in contact with each other, it is possible to increase the in-plane uniformity of the heating temperature of the substrate.

The substrate heating apparatus may further include a temperature detection unit capable of detecting the temperature of the substrate.
With this configuration, the temperature of the substrate can be grasped in real time. For example, by heating the substrate based on the detection result of the temperature detection unit, it is possible to suppress the temperature of the substrate from deviating from the target value.

The substrate heating apparatus may further include a recovery unit capable of recovering the solvent volatilized from the solution applied to the substrate.
With this configuration, it is possible to prevent the solvent volatilized from the solution from being discharged to the factory side. Further, when the recovery unit is connected to the line of the decompression unit (vacuum pump), it is possible to prevent the solvent volatilized from the solution from being liquefied again and flowing back into the vacuum pump. Furthermore, the solvent volatilized from the solution can be reused as a cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid attached to the member for scraping the liquid attached to the nozzle, and the like.

A substrate heating method according to an aspect of the present invention includes a depressurizing step of depressurizing an atmosphere of a storage space of a substrate coated with a solution, and a heating step of heating the substrate with infrared rays. Infrared heater including a bend part formed in a tubular shape bent at, and a bend part bent so as to be convex outward, and a cover part arranged to cover at least a part of the bend part from the outside. It is characterized in that the substrate is heated by infrared rays.

According to this method, since the infrared heater includes the cover portion arranged to cover at least a part of the bend portion from the outside in the heating step, it is possible to prevent the bend portion from being exposed. It is possible to suppress the temperature of the bend portion from lowering than that of other portions. That is, since at least a part of the bend part can be heated from the outside by the cover part, it is possible to suppress a temperature difference between the bend part and the other part. Therefore, the balance of the temperature distribution of the infrared heater can be improved.

An infrared heater according to an aspect of the present invention is an infrared heater capable of heating a substrate with infrared rays, and has a tubular shape that is bent at a plurality of locations, and a bend portion that is bent to be convex outward. And a cover portion arranged so as to cover at least a part of the bend portion from the outside.

According to this configuration, since the infrared heater includes the cover portion arranged to cover at least a part of the bend portion from the outside, it is possible to prevent the bend portion from being exposed. It is possible to suppress lowering of the temperature than the portion. That is, since at least a part of the bend part can be heated from the outside by the cover part, it is possible to suppress a temperature difference between the bend part and the other part. Therefore, the balance of the temperature distribution of the infrared heater can be improved.

According to the present invention, it is possible to provide a substrate heating device and an infrared heater capable of improving the balance of the temperature distribution of the infrared heater.

It is a perspective view of the substrate heating device which concerns on 1st embodiment. It is a top view of an infrared heater concerning a first embodiment. It is a figure for demonstrating the arrangement relation of a conveyance roller, a board|substrate, and a heating part. It is a figure for explaining an example of operation of a substrate heating device concerning a first embodiment. It is operation|movement explanatory drawing of the substrate heating apparatus which concerns on 1st embodiment following FIG. It is operation|movement explanatory drawing of the substrate heating apparatus which concerns on 1st embodiment following FIG. It is a top view which shows the 1st modification of the infrared heater which concerns on 1st embodiment. It is a top view which shows the 2nd modification of the infrared heater which concerns on 1st embodiment. It is a top view of the infrared heater concerning a second embodiment. It is a figure for explaining an example of operation of a substrate heating device concerning a second embodiment. It is operation|movement explanatory drawing of the substrate heating apparatus which concerns on 2nd embodiment following FIG. It is operation|movement explanatory drawing of the substrate heating apparatus which concerns on 2nd embodiment following FIG. It is a top view of an infrared heater concerning a third embodiment. It is a top view of a heater unit concerning a fourth embodiment. It is a top view of a heater unit concerning a fifth embodiment.

Embodiments of the present invention will be described below with reference to the drawings. In the following description, an XYZ rectangular coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ rectangular coordinate system. A predetermined direction in the horizontal plane is an X direction, a direction in the horizontal plane orthogonal to the X direction is a Y direction, and a direction orthogonal to each of the X direction and the Y direction (that is, a vertical direction) is a Z direction.

(First embodiment)
<Substrate heating device>
FIG. 1 is a perspective view of a substrate heating apparatus 1 according to the first embodiment.
As shown in FIG. 1, the substrate heating apparatus 1 includes a chamber 2, a decompression unit 3, a gas supply unit 4, a heating unit 5, an infrared heater 6, a position adjustment unit 7, a transfer unit 8, a temperature detection unit 9, and a recovery unit 11. The swing unit 12 and the control unit 15 are provided. The controller 15 centrally controls the components of the substrate heating apparatus 1. For the sake of convenience, in FIG. 1, the chamber 2, the decompression unit 3, and the gas supply unit 4 are indicated by a chain double-dashed line.

<Chamber>
The chamber 2 can accommodate the substrate 10, the heating unit 5, and the infrared heater 6. The substrate 10, the heating unit 5, and the infrared heater 6 are housed in the common chamber 2. The chamber 2 is formed in a rectangular parallelepiped box shape. Specifically, the chamber 2 includes a rectangular plate-shaped top plate 21, a rectangular plate-shaped bottom plate 22 facing the top plate 21, and a rectangular frame-shaped peripheral wall 23 connected to the outer peripheral edges of the top plate 21 and the bottom plate 22. Has been formed. For example, on the −X direction side of the peripheral wall 23, a substrate loading/unloading port 23 a for loading/unloading the substrate 10 to/from the chamber 2 is provided.

The chamber 2 is configured so that the substrate 10 can be housed in a closed space. For example, the airtightness in the chamber 2 can be improved by connecting the respective connecting portions of the top plate 21, the bottom plate 22, and the peripheral wall 23 without any gaps by welding or the like.

<Decompression section>
The decompression unit 3 is connected to a corner portion of the bottom plate 22 near the substrate loading/unloading port 23a on the −Y direction side. The decompression unit 3 can decompress the inside of the chamber 2. For example, the decompression unit 3 includes a decompression mechanism such as a pump mechanism. The decompression mechanism includes a vacuum pump 13. The connection portion of the decompression unit 3 is not limited to the corner of the bottom plate 22 on the −Y direction side near the substrate loading/unloading port 23a. The decompression unit 3 may be connected to the chamber 2.

The decompression unit 3 can decompress the atmosphere of the accommodation space of the substrate 10 coated with a solution for forming a polyimide film (polyimide) (hereinafter referred to as “polyimide forming liquid”). For example, the polyimide forming liquid contains polyamic acid or polyimide powder. The polyimide forming liquid is applied only to the first surface 10a (upper surface) of the rectangular plate-shaped substrate 10. The solution is not limited to the polyimide forming liquid. The solution may be any solution as long as it forms a predetermined film on the substrate 10.

<Gas supply unit>
The gas supply unit 4 is connected to a corner of the peripheral wall 23 near the top plate 21 on the +X direction side. The gas supply unit 4 can adjust the state of the internal atmosphere of the chamber 2. The gas supply unit 4 supplies an inert gas such as nitrogen (N ₂ ), helium (He), or argon (Ar) into the chamber 2. The connection portion of the gas supply unit 4 is not limited to the corner portion of the peripheral wall 23 near the top plate 21 on the +X direction side. The gas supply unit 4 may be connected to the chamber 2. Alternatively, the substrate may be cooled by supplying a gas when the substrate temperature is lowered.

The oxygen concentration of the internal atmosphere of the chamber 2 can be adjusted by the gas supply unit 4. The lower the oxygen concentration (mass basis) of the internal atmosphere of the chamber 2, the better. Specifically, the oxygen concentration in the internal atmosphere of the chamber 2 is preferably 100 ppm or less, more preferably 20 ppm or less.
For example, as described below, in the atmosphere for curing the polyimide-forming liquid applied to the substrate 10, by setting the oxygen concentration to the preferable upper limit or less, the curing of the polyimide-forming liquid is facilitated. be able to.

<Heating part>
The heating unit 5 is arranged below the chamber 2. The heating unit 5 can heat the substrate 10 at the first temperature. The heating unit 5 can heat the substrate 10 step by step. For example, the temperature range including the first temperature is a range of 20°C or higher and 300°C or lower. The heating unit 5 is arranged on the second surface 10b (lower surface) side opposite to the first surface 10a of the substrate 10.

The heating unit 5 has a rectangular plate shape. The heating unit 5 can support the substrate 10 from below. The upper surface of the heating unit 5 forms a flat surface along the first surface 10 a of the substrate 10. For example, the heating unit 5 is a hot plate.

<Infrared heater>
The infrared heater 6 is arranged above the chamber 2. The infrared heater 6 can heat the substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 is provided separately from the heating unit 5. The infrared heater 6 can heat the substrate 10 step by step. For example, the temperature range including the second temperature is 200° C. or higher and 600° C. or lower.
The infrared heater 6 is arranged on the first surface 10a side of the substrate 10.

The infrared heater 6 is supported by the top plate 21. The infrared heater 6 is fixed at a fixed position near the top plate 21 in the chamber 2. For example, the infrared heater 6 has a peak wavelength range of 1.5 μm or more and 4 μm or less. The peak wavelength range of the infrared heater 6 is not limited to the above range, but can be set to various ranges according to required specifications.

FIG. 2 is a plan view of the infrared heater 6 according to the first embodiment.
As shown in FIG. 2, the infrared heater 6 has a tubular shape bent at a plurality of places.
The infrared heater 6 has a rectangular outer shape in a plan view. For example, the length of one side of the outer shape of the infrared heater 6 is set to about 225 mm. For example, the total length of the infrared heater 6 (the total length of the conduit) is about 2475 mm. For example, the infrared heater 6 is made of a quartz tube.

The infrared heater 6 includes a straight portion group 30, a bend portion group 31, cover portions 32 and 33, a first introducing portion 34, and a second introducing portion 35.
The straight portion group 30 includes a plurality (for example, nine in the present embodiment) of straight portions 30a to 30i. The straight portions 30a to 30i have a straight tubular shape having a long side in the first direction V1. A plurality of straight portions 30a to 30i are arranged side by side in a second direction V2 that is orthogonal (intersects) to the first direction V1. The plurality of straight portions 30a to 30i are arranged at substantially the same interval S1 (pitch between the central axes) in the second direction V2. For example, the interval S1 between two adjacent straight portions 30a to 30i is about 25 mm. The straight portions 30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, 30i are arranged in this order from one side of the second direction V2 toward the other side.

The bend section group 31 includes a plurality of bend sections 31a to 31h (e.g., eight in this embodiment). The bend portions 31a to 31h are bent so as to be convex outward. The bend portions 31a to 31h connect the ends of two adjacent straight portions 30a to 30i. For example, the bend portion 31a connects one end of the straight portion 30a and one end of the straight portion 30b. That is, the bend parts 31a to 31h are bent parts that are bent to connect the ends of two adjacent straight parts 30a to 30i of the infrared heater 6. In a plan view, the bend portions 31a to 31h have a U-shaped tubular shape that is convex outward. The bend portions 31a, 31b, 31c, 31d, 31e, 31f, 31g, 31h are arranged in this order from one side of the second direction V2 toward the other side.

The cover portions 32 and 33 linearly extend in the second direction V2 so as to cover the plurality of bend portions 31a to 31h from the outside. Specifically, the cover parts 32 and 33 cover the four bend parts 31b, 31d, 31f and 31h from one side of the first direction V1 and the four bend parts 31a, 31c, 31e and 31g. And a second cover portion 33 that covers from the other side in the first direction V1.

The first cover portion 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover part 32 is in the shape of a straight tube having a length in the second direction V2. The distance S2 (pitch between the central axes) between the first cover portion 32 and the bend portions 31b, 31d, 31f, 31h is substantially the same as the distance S1 between two adjacent straight portions 30a to 30i. It is said that. For example, the interval S2 between the first cover part 32 and the bend parts 31b, 31d, 31f, 31h is about 25 mm.

The second cover portion 33 is connected to one end of the straight portion 30i on the other side in the second direction V2. The second cover portion 33 has an L-shaped tubular shape. That is, the second cover portion 33 includes a cover body 33a having a length in the second direction V2, and an extending portion 33b connected to one end of the cover body 33a and having a length in the first direction V1. There is. The distance S3 (pitch between the central axes) between the second cover portion 33 and the bend portions 31a, 31c, 31e, 31g is substantially the same as the distance S1 between two adjacent straight portions 30a to 30i. It is said that. For example, the interval S3 between the cover body 33a and the bend portions 31a, 31c, 31e, 31g in the second cover portion 33 is set to about 25 mm. The distance between the extending portion 33b and the straight portion 30a of the second cover portion 33 is also about 25 mm.

The first introduction part 34 is provided at one end of the infrared heater 6. The first introduction part 34 is arranged on one side of one side of the infrared heater 6. Specifically, the first introduction part 34 is provided at one end of the first cover part 32. A part of the first introduction part 34 is inserted into the outer shape of the infrared heater 6 in a plan view.

The second introduction part 35 is provided at the other end of the infrared heater 6. The second introduction part 35 is arranged on the other side of one side of the infrared heater 6. The second introduction part 35 is arranged on the opposite side of the first introduction part 34 in the second direction V2. Specifically, the second introducing portion 35 is provided at one end of the extending portion 33b of the second cover portion 33. A part of the second introduction part 35 is inserted into the outer shape of the infrared heater 6 in a plan view.

<Position adjustment unit>
As shown in FIG. 1, the position adjusting unit 7 is arranged below the chamber 2. The position adjusting unit 7 can adjust the relative positions of the heating unit 5, the infrared heater 6, and the substrate 10. The position adjusting unit 7 includes a moving unit 7a and a driving unit 7b. The moving portion 7a is a columnar member that extends vertically (Z direction). The upper end of the moving unit 7a is fixed to the lower surface of the heating unit 5. The drive unit 7b can move the moving unit 7a up and down. The moving unit 7 a allows the substrate 10 to move between the heating unit 5 and the infrared heater 6. Specifically, the moving unit 7a moves the substrate 10 up and down by driving the driving unit 7b with the substrate 10 placed on the upper surface of the heating unit 5 (see FIGS. 5 and 6).

The drive unit 7b is arranged outside the chamber 2. Therefore, even if particles are generated due to the driving of the drive unit 7b, it is possible to prevent the particles from entering the chamber 2 by making the chamber 2 a closed space.

<Conveyor>
The transport unit 8 is arranged in the chamber 2 between the heating unit 5 and the infrared heater 6. The transfer unit 8 can transfer the substrate 10. The transport section 8 is formed with a passing section 8h that allows the moving section 7a to pass therethrough. The transport unit 8 includes a plurality of transport rollers 8a arranged along the X direction, which is the transport direction of the substrate 10.

The plurality of transport rollers 8a are arranged separately on the +Y direction side and the −Y direction side of the peripheral wall 23. That is, the passage portion 8h is a space between the transport roller 8a on the +Y direction side of the peripheral wall 23 and the transport roller 8a on the −Y direction side of the peripheral wall 23.

For example, a plurality of shafts (not shown) extending in the Y direction are arranged along the X direction on the +Y direction side and the −Y direction side of the peripheral wall 23, respectively. Each transport roller 8a is configured to be driven to rotate around each shaft by a drive mechanism (not shown).

FIG. 3 is a diagram for explaining the positional relationship between the transport roller 8a, the substrate 10, and the heating unit 5. FIG. 3 corresponds to a top view of the substrate heating device 1. For the sake of convenience, the chamber 2 is indicated by a chain double-dashed line in FIG.
In FIG. 3, reference numeral L1 is an interval (hereinafter, referred to as “roller separation distance”) in which the transport roller 8a on the +Y direction side of the peripheral wall 23 and the transport roller 8a on the −Y direction side of the peripheral wall 23 separate from each other. The symbol L2 is the length of the substrate 10 in the Y direction (hereinafter referred to as “substrate length”). Reference numeral L3 is the length of the heating unit 5 in the Y direction (hereinafter referred to as "heating unit length").

As shown in FIG. 3, the roller separation distance L1 is smaller than the substrate length L2 and larger than the heating portion length L3 (L3<L1<L2). Since the roller separation distance L1 is larger than the heating section length L3, the moving section 7a can pass through the passing section 8h together with the heating section 5 (see FIGS. 5 and 6).

<Temperature detector>
As shown in FIG. 1, the temperature detector 9 is arranged outside the chamber 2. The temperature detection unit 9 can detect the temperature of the substrate 10. Specifically, the temperature detection unit 9 is installed on the top plate 21. A window (not shown) is attached to the top plate 21. The temperature detection unit 9 detects the temperature of the substrate 10 through the window of the top plate 21. For example, the temperature detection unit 9 is a non-contact temperature sensor such as a radiation thermometer. Although only one temperature detection unit 9 is shown in FIG. 1, the number of temperature detection units 9 is not limited to one and may be plural. For example, it is preferable to dispose a plurality of temperature detection units 9 at the central portion and four corners of the top plate 21.

<Recovery Department>
The recovery unit 11 is connected to the line of the decompression unit 3 (vacuum pump 13). The recovery unit 11 can recover the solvent that has volatilized from the polyimide-forming liquid applied to the substrate 10.

<Swing part>
The swinging part 12 is arranged in the chamber 2 on the −X direction side of the substrate 10. The swinging part 12 can swing the substrate 10. For example, the oscillating portion 12 oscillates the substrate 10 in the direction along the XY plane or the direction along the Z direction while the substrate 10 is heated. It should be noted that the arrangement position of the swing unit 12 is not limited to the −X direction side of the substrate 10 in the chamber 2. For example, the swing unit 12 may be provided in the position adjusting unit 7.

<Substrate heating method>
Next, the substrate heating method according to this embodiment will be described. In the present embodiment, the substrate 10 is heated using the substrate heating device 1 described above. The operation performed by each unit of the substrate heating apparatus 1 is controlled by the control unit 15.

FIG. 4 is a diagram for explaining an example of the operation of the substrate heating apparatus 1 according to the first embodiment.
FIG. 5 is an operation explanatory diagram of the substrate heating apparatus 1 according to the first embodiment, following FIG. 4. FIG. 6 is an operation explanatory diagram of the substrate heating apparatus 1 according to the first embodiment, following FIG.
For the sake of convenience, in FIG. 4 to FIG. 6, among the components of the substrate heating apparatus 1, the depressurization unit 3, the gas supply unit 4, the temperature detection unit 9, the recovery unit 11, the swing unit 12, and the control unit 15 are omitted. To do.

The substrate heating method according to this embodiment includes a depressurizing step, a first heating step, and a second heating step.
In the depressurizing step, the atmosphere in the accommodation space of the substrate 10 coated with the polyimide forming liquid is depressurized.
As shown in FIG. 4, in the depressurizing step, the substrate 10 is placed on the transport roller 8a. In the depressurizing step, the heating unit 5 is located near the bottom plate 22. In the depressurization step, the heating unit 5 and the substrate 10 are separated from each other to the extent that the heat of the heating unit 5 is not transferred to the substrate 10. In the depressurization step, the heating unit 5 is powered on. For example, the temperature of the heating unit 5 is about 250°C. On the other hand, in the depressurization step, the power source of the infrared heater 6 is off.

In the depressurizing step, the atmosphere of the accommodation space of the substrate 10 is depressurized from atmospheric pressure to 500 Pa or less. For example, in the depressurizing step, the pressure inside the chamber is gradually decreased from atmospheric pressure to 20 Pa.

In the depressurizing step, the oxygen concentration in the internal atmosphere of the chamber 2 is made as low as possible. For example, in the pressure reducing step, the degree of vacuum in the chamber 2 is set to 20 Pa or less. Thereby, the oxygen concentration in the chamber 2 can be set to 100 ppm or less.

After the depressurization step, in the first heating step, the substrate 10 is heated at the first temperature.
As shown in FIG. 5, in the first heating step, the heating unit 5 is moved upward and the substrate 10 is placed on the upper surface of the heating unit 5. As a result, the heating unit 5 comes into contact with the second surface 10b of the substrate 10, so that the heat of the heating unit 5 is directly transferred to the substrate 10. For example, in the first heating step, the temperature of the heating section 5 is maintained at 250°C. Therefore, the substrate temperature can be raised up to 250°C. On the other hand, in the first heating process, the power source of the infrared heater 6 remains off.

In the first heating step, the heating section 5 is located inside the passage section 8h (see FIG. 1). For convenience, in FIG. 5, the heating unit 5 before the movement (the position during the depressurizing step) is indicated by a chain double-dashed line, and the heating unit 5 after the movement (the position during the first heating step) is indicated by a solid line.

In the first heating step, the substrate 10 is heated in a state where the atmosphere of the depressurizing step is maintained and the substrate temperature is in the range of 150° C. to 300° C. until the polyimide forming liquid applied to the substrate 10 is volatilized or imidized. .. For example, in the first heating step, the time for heating the substrate 10 is set to 10 minutes or less. Specifically, in the first heating step, the time for heating the substrate 10 is 3 min. For example, in the first heating step, the substrate temperature is gradually increased from 25°C to 250°C.

After the first heating step, in the second heating step, the substrate 10 is heated at a second temperature higher than the first temperature. In the second heating step, the substrate 10 is heated by using the infrared heater 6 provided separately from the heating section 5 used in the first heating step. The second heating step corresponds to the heating step described in the claims.

As shown in FIG. 6, in the second heating step, the heating unit 5 is moved further above the position in the first heating step, and the substrate 10 is brought close to the infrared heater 6. For example, in the second heating step, the temperature of the heating section 5 is maintained at 250°C. In addition, in the second heating step, the power source of the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 450°C. Therefore, the substrate temperature can be raised to 450°C. In the second heating step, the substrate 10 is closer to the infrared heater 6 than in the first heating step, so that the heat of the infrared heater 6 is sufficiently transmitted to the substrate 10.

In the second step, the heating unit 5 is located above the transport roller 8a (passing unit 8h shown in FIG. 1) and below the infrared heater 6. For convenience, in FIG. 6, the heating unit 5 before the movement (the position during the first heating step) is indicated by a two-dot chain line, and the heating unit 5 after the movement (the position during the second heating step) is indicated by a solid line.

In the second heating step, the substrate 10 is heated while the atmosphere of the depressurizing step is maintained until the substrate temperature becomes 600° C. or lower from the temperature of the first heating step. For example, in the second heating step, the substrate temperature is sharply increased from 250°C to 450°C. Moreover, in the second heating step, the chamber internal pressure is maintained at 20 Pa or less.

The second heating step includes a cooling step of cooling the substrate 10. For example, in the cooling step, the substrate 10 is cooled until the substrate temperature reaches the temperature at which the substrate 10 can be transferred from the temperature in the second heating step while maintaining the atmosphere of the depressurizing step or the low oxygen atmosphere. In the cooling process, the infrared heater 6 is turned off.

Through the above steps, the polyimide forming liquid applied to the substrate 10 is volatilized or imidized, and the molecular chains at the time of imidization of the polyimide forming liquid applied to the substrate 10 are rearranged, A polyimide film can be formed.

As described above, according to the present embodiment, the infrared heater 6 includes the cover portions 32 and 33 arranged so as to cover at least a part of the bend portions 31a to 31h from the outside, so that the bend portions 31a to 31h. Since it is possible to prevent the exposure of the bent portions 31a to 31h, it is possible to prevent the bend portions 31a to 31h from lowering the temperature than other portions. That is, since at least a part of the bend parts 31a to 31h can be heated from the outside by the cover parts 32 and 33, it is possible to suppress a temperature difference between the bend parts 31a to 31h and other parts. .. Therefore, the balance of the temperature distribution of the infrared heater 6 can be improved.

Further, since the cover portions 32 and 33 linearly extend in the second direction V2 so as to cover the plurality of bend portions 31a to 31h from the outside, it is possible to collectively expose the plurality of bend portions 31a to 31h. Therefore, it is possible to collectively prevent the plurality of bend portions 31a to 31h from lowering the temperature than other portions. That is, since the plurality of bend portions 31a to 31h can be collectively heated from the outside by the cover portions 32 and 33, it is possible to suppress the temperature difference between the plurality of bend portions 31a to 31h and other portions. be able to. Therefore, the balance of the temperature distribution of the infrared heater 6 can be efficiently improved. In addition, the infrared heater 6 further includes a plurality of straight portions 30a to 30i that are long in the first direction V1 and that are arranged side by side in the second direction V2 that intersects the first direction V1. Since the heat generation temperatures of the infrared heaters 6a to 6i can be mutually increased by adjoining each other, the balance of the temperature distribution of the infrared heater 6 can be improved at a high temperature.

By the way, if the first introducing portion 34 and the second introducing portion 35 are too close to each other, the temperature of that portion tends to be lower than the temperature of other portions. However, according to the present embodiment, both the first introduction portion 34 and the second introduction portion 35 are provided at the end portions of the cover portions 32 and 33, so that the first introduction portion 34 and the second introduction portion 35 are provided. Since the and are separated from each other to some extent, the infrared heater 6 can be suppressed from being locally cooled. Therefore, the balance of the temperature distribution of the infrared heater 6 can be improved. In addition, according to the present embodiment, the distance between the first introduction portion 34 and the second introduction portion 35 (the length of one side of the outer shape of the infrared heater 6) is set to about 225 mm, so that the top plate 21 of the chamber 2 is Even if the thermal expansion or the thermal contraction occurs, the expansion or the contraction can be allowed.

The outer shape of the infrared heater 6 has a rectangular shape in a plan view, the first introduction part 34 is arranged on one side of the infrared heater 6, and the second introduction part 35 is arranged on the other side of the one side. As a result, the following effects are achieved. Since the portion of the infrared heater 6 from the second introduction portion 35 to the bend portion 31h is a U-shaped tube bent at two places (that is, the shape along the three sides of the infrared heater 6 excluding the one side), The flexibility of the infrared heater 6 can be increased as compared with the case of the straight tube and the L-shaped tube. Therefore, even if the one side of the infrared heater 6 thermally expands or contracts, the flexibility of the infrared heater 6 allows the expansion or contraction of the one side.

Further, since both the first introduction part 34 and the second introduction part 35 enter the outer shape of the infrared heater 6 in a plan view, the first introduction part 34 and the second introduction part 34 are arranged when the infrared heater 6 is arranged. Since it is possible to prevent the portion 35 from getting in the way, it is possible to increase the degree of freedom in layout. For example, when the plurality of infrared heaters 6 are spread over one surface, it is possible to prevent two adjacent infrared heaters 6 from interfering with each other in the first introduction portion 34 and the second introduction portion 35, and thus the plurality of infrared heaters 6 are provided. Can be laid out orderly.

Further, by further including a heating unit 5 which is arranged on the opposite side of the infrared heater 6 with the substrate 10 interposed therebetween and which can heat the substrate 10, the heating by the heating unit 5 and the heating by the infrared heater 6 are combined, 10 can be heated much more effectively.

Further, since the heating temperature of the substrate 10 can be controlled in the chamber 2 by further including the chamber 2 capable of accommodating the substrate 10, the heating unit 5, and the infrared heater 6, the substrate 10 can be effectively heated. You can

Since the substrate 10, the heating unit 5, and the infrared heater 6 are housed in the common chamber 2, the heating process for the substrate 10 by the heating unit 5 and the infrared heater 6 for the substrate 10 in the common chamber 2 are performed. It can be done in a batch. That is, unlike the case where the heating unit 5 and the infrared heater 6 are housed in the chambers 2 different from each other, no time is required to transfer the substrate 10 between the two different chambers 2. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. Further, the entire apparatus can be downsized as compared with the case where two different chambers 2 are provided.

Further, the polyimide forming liquid is applied only to the first surface 10a of the substrate 10, and the heating unit 5 is disposed on the second surface 10b side opposite to the first surface 10a of the substrate 10. Since the heat generated from the heating unit 5 is transferred from the second surface 10b side of the substrate 10 toward the first surface 10a side, the substrate 10 can be effectively heated. Further, while the substrate 10 is being heated by the heating unit 5, the polyimide forming liquid applied to the substrate 10 can be efficiently volatilized or imidized (for example, degassing during film formation).

Further, since both the heating unit 5 and the infrared heater 6 can heat the substrate 10 step by step, as compared with the case where the heating unit 5 and the infrared heater 6 can heat the substrate 10 only at a constant temperature, The substrate 10 can be efficiently heated so as to meet the film forming conditions of the polyimide forming liquid applied to the substrate 10. Therefore, the polyimide-forming liquid applied to the substrate 10 can be dried stepwise and cured well.

Further, by further including the position adjusting unit 7 capable of adjusting the relative position between the heating unit 5 and the infrared heater 6 and the substrate 10, the heating temperature of the substrate 10 can be reduced as compared with the case where the position adjusting unit 7 is not provided. Easy to adjust. For example, when the heating temperature of the substrate 10 is increased, the heating unit 5 and the infrared heater 6 are brought close to the substrate 10, and when the heating temperature of the substrate 10 is lowered, the heating unit 5, the infrared heater 6 and the substrate 10 are moved. Can be separated. Therefore, it becomes easy to heat the substrate 10 step by step.

In addition, the position adjusting unit 7 includes the moving unit 7a that allows the substrate 10 to move between the heating unit 5 and the infrared heater 6, so that the substrate 10 moves between the heating unit 5 and the infrared heater 6. Thus, the heating temperature of the substrate 10 can be adjusted with at least one of the heating unit 5 and the infrared heater 6 arranged at a fixed position. Therefore, since it is not necessary to separately provide a device that can move at least one of the heating unit 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted with a simple configuration.

Further, between the heating unit 5 and the infrared heater 6, there is provided a carrying unit 8 capable of carrying the substrate 10, and the carrying unit 8 is provided with a passing unit 8h capable of passing the moving unit 7a. As a result, the following effects are achieved. When the substrate 10 is moved between the heating unit 5 and the infrared heater 6, the passing unit 8h can be passed, and therefore the substrate 10 does not need to be moved around the transport unit 8. Therefore, since it is not necessary to separately provide a device for moving the substrate 10 by bypassing the transport unit 8, the substrate 10 can be moved smoothly with a simple configuration.

Further, since the heating unit 5 is a hot plate, the heating temperature of the substrate 10 can be made uniform within the surface of the substrate 10, and thus the film characteristics can be improved. For example, by heating the substrate 10 with one surface of the hot plate and the second surface 10b of the substrate 10 in contact with each other, it is possible to increase the in-plane uniformity of the heating temperature of the substrate 10.

Further, the temperature of the substrate 10 can be grasped in real time by further including the temperature detection unit 9 capable of detecting the temperature of the substrate 10. For example, by heating the substrate 10 based on the detection result of the temperature detection unit 9, it is possible to suppress the temperature of the substrate 10 from deviating from the target value.

Further, by further including the recovery unit 11 capable of recovering the solvent evaporated from the polyimide forming liquid applied to the substrate 10, it is possible to prevent the solvent evaporated from the polyimide forming liquid from being discharged to the factory side. .. Further, when the recovery unit 11 is connected to the line of the decompression unit 3 (vacuum pump 13), it is possible to prevent the solvent evaporated from the polyimide forming liquid from being liquefied again and flowing back into the vacuum pump 13. Furthermore, the solvent volatilized from the polyimide-forming liquid can be reused as the cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid attached to the member for scraping the liquid attached to the nozzle, and the like.

Further, since the infrared heater 6 is arranged on the first surface 10a side of the substrate 10, the heat generated from the infrared heater 6 is transferred from the first surface 10a side of the substrate 10 to the second surface 10b side. Since it is transmitted to the substrate 10, the heating by the heating unit 5 and the heating by the infrared heater 6 are combined, so that the substrate 10 can be heated more effectively.

In addition, the infrared heater 6 heats the substrate 10 to the second temperature in a short time. Further, since the substrate 10 can be heated (so-called non-contact heating) while the infrared heater 6 and the substrate 10 are separated from each other, the substrate 10 can be kept clean (so-called clean heating).

Further, since the peak wavelength range of the infrared heater is in the range of 1.5 μm or more and 4 μm or less, the wavelength in the range of 1.5 μm or more and 4 μm or less matches the absorption wavelength of glass, water, etc. Further, the polyimide forming liquid applied to the substrate 10 can be heated more effectively.

In addition, since the substrate 10 can be further heated while swinging the substrate 10 by further including the swinging portion 12 that can swing the substrate 10, the temperature uniformity of the substrate 10 can be improved.

(First modification)
Next, a first modified example of the first embodiment will be described using FIG. 7.
FIG. 7 is a plan view showing a first modified example of the infrared heater according to the first embodiment.
In the first modified example, the shape of the infrared heater is particularly different from that of the first embodiment. In FIG. 7, the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Infrared heater>
As shown in FIG. 7, the length and length of one side of the outer shape of the infrared heater 6A according to the present modification are shorter than those of the infrared heater 6 according to the first embodiment (see FIG. 2). For example, the length of one side of the outer shape of the infrared heater 6A is about 210 mm. For example, the total length of the infrared heater 6A is about 1890 mm.

A plurality of straight portions 30a to 30g (for example, seven in this modification) are arranged side by side in the second direction V2. An interval S1 between two adjacent straight portions 30a to 30g according to the present modification is larger than an interval S1 between two adjacent straight portions 30a to 30i according to the first embodiment. For example, the interval S1 between two adjacent straight portions 30a to 30g according to this modification is about 30 mm.

The cover portions 32 and 33 linearly extend in the second direction V2 so as to cover the plurality (for example, six in this modification) of the bend portions 31a to 31f from the outside. Specifically, the cover portions 32 and 33 cover the three bend portions 31b, 31d and 31f from one side of the first direction V1 and the three bend portions 31a, 31c and 31e in the first direction. And a second cover portion 33 that covers from the other side of V1.

The distance S2 between the first cover portion 32 and the bend portions 31b, 31d, 31f is substantially the same as the distance S1 between the two adjacent straight portions 30a to 30g. For example, the distance between the first cover portion 32 and the bend portions 31b, 31d, 31f is about 30 mm.

The distance S3 between the second cover portion 33 and the bend portions 31a, 31c, 31e is substantially the same as the distance S1 between two adjacent straight portions 30a to 30g. For example, the distance between the cover body 33a and the bend portions 31a, 31c, 31e in the second cover portion 33 is about 30 mm. The distance between the extending portion 33b and the straight portion 30a of the second cover portion 33 is also about 30 mm.

As described above, according to the present modification, the side length and the entire length of the outer shape of the infrared heater 6A are shorter than those of the infrared heater 6 according to the first embodiment, so that the weight of the infrared heater 6A is reduced and It can be made compact. In addition, the infrared heater 6A of the present modification can be used as a low-temperature infrared heater (for example, a heating temperature of 350° C. to 400° C.) without any problem, so that cost reduction can be achieved.

(Second modified example)
Next, a second modification of the first embodiment will be described with reference to FIG.
FIG. 8 is a plan view showing a second modified example of the infrared heater according to the first embodiment.
In the second modified example, the shape of the infrared heater is particularly different from that of the first modified example. In FIG. 8, the same components as those of the first modification are designated by the same reference numerals, and detailed description thereof will be omitted.

<Infrared heater>
As shown in FIG. 8, the entire length of the infrared heater 6B according to the present modification is longer than that of the infrared heater 6A according to the first modification (see FIG. 7). For example, the total length of the infrared heater 6B is about 2070 mm. The length of one side of the outer shape of the infrared heater 6B is set to about 210 mm.

The distance between the first cover portion 32 and the bend portions 31b, 31d, 31f is smaller than the distance S1 between two adjacent straight portions 30a to 30g. For example, the distance between the first cover portion 32 and the bend portions 31b, 31d, 31f is about 15 mm.

The distance between the second cover portion 33 and the bend portions 31a, 31c, 31e is smaller than the distance S1 between two adjacent straight portions 30a to 30g. For example, the space between the cover body 33a and the bend portions 31a, 31c, 31e in the second cover portion 33 is set to about 15 mm. The distance between the extending portion 33b and the straight portion 30a of the second cover portion 33 is about 30 mm.

As described above, according to this modification, the intervals S2 and S3 between the cover parts 32 and 33 and the bend parts 31a to 31f are smaller than the interval S1 between the two adjacent straight parts 30a to 30g. Thus, the following effects are produced. The bend portions 31a to 31f are exposed as compared with the case where the distances S2 and S3 between the cover portions 32 and 33 and the bend portions 31a to 31f are equal to or more than the distance S1 between two adjacent straight portions 30a to 30g. Since it can be avoided more reliably, it is possible to more reliably suppress the temperature decrease in the bend parts 31a to 31f than in the other parts. That is, since at least a part of the bend parts 31a to 31f can be more surely heated from the outside by the cover parts 32 and 33, it is more reliable that a temperature difference occurs between the bend parts 31a to 31f and other parts. Can be suppressed. Therefore, the balance of the temperature distribution of the infrared heater 6B can be improved more reliably.

(Second embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS.
FIG. 9 is a plan view of the infrared heater 206 according to the second embodiment.
In the second embodiment, the shape of the infrared heater is particularly different from that of the first embodiment. In FIG. 9, the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Infrared heater>
As shown in FIG. 9, the infrared heater 206 has a rectangular outer shape in a plan view. The infrared heater 206 has a point-symmetrical shape (two-fold symmetrical shape) in a plan view.

The first cover portion 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover part 32 is in the shape of a straight tube having a length in the second direction V2.
The second cover portion 233 is connected to one end of the straight portion 30i on the other side in the second direction V2. The second cover portion 233 is in the shape of a straight tube having a long side in the second direction V2.

The first introduction part 34 is arranged at one corner of the infrared heater 206. Specifically, the first introduction part 34 is provided at one end of the first cover part 32.
The second introduction portion 35 is arranged at a diagonal portion of the one corner portion. Specifically, the second introduction part 35 is provided at one end of the second cover part 233. That is, the second introduction part 35 is arranged on the opposite side of the first introduction part 34 in the first direction V1 and the second direction V2.

FIG. 10 is a diagram for explaining an example of the operation of the substrate heating apparatus 201 according to the second embodiment. FIG. 11 is an operation explanatory diagram of the substrate heating apparatus 201 according to the second embodiment, following FIG. 10. FIG. 12 is an operation explanatory diagram of the substrate heating apparatus 201 according to the second embodiment, following FIG. 11.
For convenience, in FIG. 10 to FIG. 12, among the components of the substrate heating apparatus 201, the decompression unit 3, the gas supply unit 4, the transfer unit 8, the temperature detection unit 9, the recovery unit 11, the swing unit 12, and the control unit 15 are included. Are not shown.

In the second embodiment, the configuration of the position adjusting unit 207 is particularly different from that of the first embodiment. 10 to 12, the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Position adjustment unit>
As shown in FIG. 10, the position adjusting unit 207 includes a housing unit 270, a moving unit 275, and a driving unit 279.
The housing portion 270 is arranged below the chamber 2. The accommodating portion 270 can accommodate the moving portion 275 and the driving portion 279. The housing portion 270 is formed in a rectangular parallelepiped box shape. Specifically, the housing portion 270 includes a rectangular plate-shaped first support plate 271, a rectangular plate-shaped second support plate 272 facing the first support plate 271, a first support plate 271 and a second support plate 272. It is formed by a surrounding plate 273 which is connected to the outer peripheral edge of the moving part 275 and covers the periphery of the moving part 275 and the driving part 279. The enclosing plate 273 may not be provided. That is, the position adjusting unit 207 may include at least the first support plate 271, the moving unit 275, and the driving unit 279. For example, an exterior cover that covers the entire device may be provided.

The outer peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2. The first support plate 271 also functions as a bottom plate of the chamber 2. The heating unit 205 is arranged on the first support plate 271. Specifically, the heating unit 205 is supported by the first support plate 271 inside the chamber 2.

The enclosure plate 273 and the peripheral wall 23 are continuously connected in the vertical direction. The chamber 2 is configured so that the substrate 10 can be housed in a closed space. For example, the airtightness inside the chamber 2 can be improved by connecting the respective connecting portions of the top plate 21, the first support plate 271 as the bottom plate, and the peripheral wall 23 without any gap by welding or the like.

The moving unit 275 includes a pin 276, a telescopic tube 277, and a base 278.
The pin 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a rod-shaped member that extends vertically. The tip (upper end) of the pin 276 can contact the second surface 10b of the substrate 10 and can separate from the second surface 10b of the substrate 10.

A plurality of pins 276 are provided at intervals in a direction parallel to the second surface 10b (X direction and Y direction). The plurality of pins 276 are formed to have substantially the same length. The tips of the plurality of pins 276 are arranged in a plane parallel to the second surface 10b (in the XY plane).

The expansion tube 277 is provided between the first support plate 271 and the base 278. The expansion tube 277 is a tubular member that covers the pin 276 so as to surround it and extends vertically. The expandable tube 277 is vertically expandable and contractable between the first support plate 271 and the base 278. For example, the expansion tube 277 is a vacuum bellows.

A plurality of expansion tubes 277 are provided in the same number as the plurality of pins 276. The tips (upper ends) of the plurality of expansion and contraction tubes 277 are fixed to the first support plate 271. Specifically, the first support plate 271 is formed with a plurality of insertion holes 271h that open the first support plate 271 in the thickness direction. The inner diameter of each insertion hole 271h is substantially the same as the outer diameter of each expansion tube 277. For example, the tip of each expansion tube 277 is fitted and fixed to each insertion hole 271h of the first support plate 271.

The base 278 is a plate-shaped member facing the first support plate 271. The upper surface of the base 278 is a flat surface that extends along the second surface 10b of the substrate 10. The base ends (lower ends) of the pins 276 and the base ends (lower ends) of the expandable tubes 277 are fixed to the upper surface of the base 278.

The tips of the plurality of pins 276 can pass through the heating unit 205. In the heating unit 205, the heating unit 205 is aligned with the normal line of the second surface 10b at a position overlapping the insertion holes 271h of the first support plate 271 (internal space of each expansion tube 277) in the normal direction of the second surface 10b. A plurality of insertion holes 205h opening in the direction (thickness direction of the hot plate) are formed.

The tips of the plurality of pins 276 can be brought into contact with the second surface 10b of the substrate 10 via the internal spaces of the expansion tubes 277 and the insertion holes 205h of the heating unit 205. Therefore, the substrate 10 is supported by the tips of the plurality of pins 276 in parallel with the XY plane. The plurality of pins 276 are configured to move in the Z direction inside the chamber 2 while supporting the substrate 10 housed inside the chamber 2 (see FIGS. 10 to 12 ).

The drive unit 279 is arranged inside the housing unit 270 outside the chamber 2. Therefore, even if particles are generated due to the driving of the driving unit 279, the invasion of particles into the chamber 2 can be avoided by making the chamber 2 a closed space.

<Substrate heating method>
Next, the substrate heating method according to this embodiment will be described. In the present embodiment, the substrate 10 is heated using the substrate heating device 201 described above. The operation performed by each unit of the substrate heating apparatus 201 is controlled by the control unit 15. Note that detailed description of steps similar to those of the first embodiment will be omitted.

The substrate heating method according to this embodiment includes a depressurizing step, a first heating step, and a second heating step.
In the depressurizing step, the substrate 10 coated with the polyimide forming liquid is depressurized.
As shown in FIG. 10, the substrate 10 is separated from the heating unit 205 in the depressurizing step. Specifically, the tips of the plurality of pins 276 are brought into contact with the second surface 10b of the substrate 10 through the inner space of each expansion tube 277 and the insertion holes 205h of the heating unit 205, and the substrate 10 is raised. The substrate 10 is separated from the heating unit 205. In the depressurization step, the heating unit 205 and the substrate 10 are separated from each other to the extent that the heat of the heating unit 205 is not transferred to the substrate 10.
In the depressurization step, the heating unit 205 is powered on. For example, the temperature of the heating unit 205 is about 250°C. On the other hand, in the depressurization process, the power source of the infrared heater 206 is off.

After the depressurization step, in the first heating step, the substrate 10 is heated at the temperature of the heating unit 205.
As shown in FIG. 11, in the first heating step, the tips of the plurality of pins 276 are separated from the second surface 10b of the substrate 10 to bring the substrate 10 into contact with the heating unit 205. That is, the substrate 10 is placed on the upper surface of the heating unit 205. As a result, the heating unit 205 contacts the second surface 10b of the substrate 10, so that the heat of the heating unit 5 is directly transferred to the substrate 10. For example, in the first heating step, the temperature of the heating unit 205 is maintained at 250°C. Therefore, the substrate temperature can be raised up to 250°C. On the other hand, in the first heating step, the power source of the infrared heater 206 remains off.

After the first heating step, in the second heating step, the substrate 10 is heated at the second temperature.
As shown in FIG. 12, in the second heating step, the substrate 10 is brought closer to the infrared heater 206 by further raising the substrate 10 from the position in the first heating step. For example, in the second heating step, the temperature of the heating unit 205 is maintained at 250°C. In addition, in the second heating step, the power source of the infrared heater 206 is turned on. For example, the infrared heater 206 can heat the substrate 10 at 450°C. Therefore, the substrate temperature can be raised to 450°C. In the second heating step, the substrate 10 is closer to the infrared heater 206 than in the first heating step, so that the heat of the infrared heater 206 is sufficiently transmitted to the substrate 10.

Then, the polyimide forming liquid applied to the substrate 10 is volatilized or imidized by performing the same steps as those in the first embodiment, and the molecules of the polyimide forming liquid applied to the substrate 10 at the time of imidization. The chains can be rearranged to form a polyimide film.

As described above, according to the present embodiment, the outer shape of the infrared heater 206 has a rectangular shape in a plan view, the first introduction part 34 is arranged in one corner of the infrared heater 206, and the second introduction part 35 is formed in the one corner. Since the first introduction portion 34 and the second introduction portion 35 are arranged symmetrically with respect to the center of the infrared heater 206 in plan view, the first introduction portion 34 and the first introduction portion 34 are arranged at diagonal positions of the first introduction portion 34. And the 2nd introduction part 35 separates far. As a result, even when the temperature of the first introducing section 34 and the second introducing section 35 is lower than that of the other portions, the temperature lowering temperatures of the first and second introducing sections 34 and 35 are not lowered, and the infrared heater 206 locally excessively lowers the temperature. Since this can be avoided, the balance of the temperature distribution of the infrared heater 206 can be improved as much as possible.

Further, since the infrared heater 206 has a point-symmetrical shape in a plan view, the balance of the temperature distribution of the infrared heater 206 is more surely improved as compared with the case where the infrared heater 206 has an asymmetrical shape in a plan view. can do.

Further, the moving portion 275 includes a plurality of pins 276 capable of supporting the second surface 10b of the substrate 10 and movable in the normal direction of the second surface 10b, and the tips of the plurality of pins 276 are parallel to the second surface 10b. By being arranged in the plane, the following effects are achieved. Since the substrate 10 can be heated with the substrate 10 being stably supported, the polyimide forming liquid applied to the substrate 10 can be stably formed into a film.

In addition, the heating unit 205 is formed with a plurality of insertion holes 205h that open the heating unit 205 in the normal direction of the second surface 10b, and the tips of the pins 276 are provided on the second surface via the insertion holes 205h. By being able to contact 10b, the following effects are achieved. Since the substrate 10 can be transferred between the plurality of pins 276 and the heating unit 205 in a short time, the heating temperature of the substrate 10 can be efficiently adjusted.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG.
FIG. 13 is a plan view of the infrared heater 306 according to the third embodiment.
In the third embodiment, the shape of the infrared heater is particularly different from that of the first embodiment. In FIG. 13, the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Infrared heater>
As shown in FIG. 13, the outer shape of the infrared heater 306 has a rectangular shape in a plan view.
The first cover portion 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover part 32 is in the shape of a straight tube having a length in the second direction V2.
The second cover portion 333 is connected to one end of the straight portion 30i on the other side in the second direction V2. The second cover portion 333 has a U-shaped tubular shape. That is, the second cover portion 333 includes a cover body 333a having a length in the second direction V2, a first extending portion 333b connected to one end of the cover body 333a, and having a length in the first direction V1. A second extending portion 333c that is connected to one end of the one extending portion 333b and has a length in the second direction V2 so as to cover the first cover portion 32 from the outside is provided. The space S3 between the cover body 333a and the bend portions 31a, 31c, 31e, 31g in the second cover portion 333 is between the second extending portion 333c and the first cover portion 32 in the second cover portion 333. The size is substantially the same as the interval S4.

The first introduction part 34 and the second introduction part 35 are arranged adjacent to one corner of the infrared heater 306. The first introduction part 34 is arranged inward of the second introduction part 35 in the first direction V1. That is, the first introduction part 34 is arranged between the bend part 31 h and the second introduction part 35.

As described above, according to the present embodiment, the infrared heater 306 has a rectangular outer shape in a plan view, and the first introduction portion 34 and the second introduction portion 35 are arranged adjacent to one corner of the infrared heater 306. By doing so, the distance between the first introduction part 34 and the second introduction part 35 is minimized, so that thermal expansion or thermal contraction of the infrared heater 306 can be suppressed as much as possible.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIG.
FIG. 14 is a plan view of the heater unit 560 according to the fourth embodiment.
In the fourth embodiment, the arrangement of the infrared heaters is particularly different from that of the first embodiment. 14, the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Heater unit>
As shown in FIG. 14, the substrate heating apparatus according to the present embodiment includes a heater unit 560 that is configured by laying a plurality of (for example, 11 in this embodiment) infrared heaters 6.
The heater unit 560 includes a first infrared heater group 561, a second infrared heater group 562, and a third infrared heater group 563.

The first infrared heater group 561 includes a plurality of (for example, four in the present embodiment) first infrared heaters 561a to 561d. The plurality of first infrared heaters 561a to 561d are arranged in a line in the first direction V1 (one direction). The first infrared heaters 561a, 561b, 561c, 561d are arranged in this order from one side of the first direction V1 toward the other side.

The second infrared heater group 562 includes a plurality of (for example, three in the present embodiment) second infrared heaters 562a to 562c. The plurality of second infrared heaters 562a to 562c are arranged in a line in a direction parallel to the first direction V1. The second infrared heaters 562a, 562b, 562c are arranged in this order from one side parallel to the first direction V1 toward the other side.

The third infrared heater group 563 includes a plurality of (for example, four in the present embodiment) third infrared heaters 563a to 563d. The plurality of third infrared heaters 563a to 563d are arranged in a line in a direction parallel to the first direction V1. The third infrared heaters 563a, 563b, 563c, 563d are arranged in this order from one side in the direction parallel to the first direction V1 toward the other side.

The second infrared heaters 562a to 562c are spread over the first infrared heaters 561a to 561d in the second direction V2 (direction intersecting with one direction) so as to be adjacent to the boundary between two adjacent first infrared heaters 561a to 561d. Are arranged. Further, the second infrared heaters 562a to 562c are arranged so as to be adjacent to the boundary between two adjacent third infrared heaters 563a to 563d in the second direction V2 so as to be spread over the third infrared heaters 563a to 563d. That is, the second infrared heaters 562a to 562c are sandwiched between the boundary between the two first infrared heaters 561a to 561d adjacent to each other in the second direction V2 and the boundary between the two third infrared heaters 563a to 563d adjacent to each other. It is arranged.

The second infrared heaters 562a to 562c have the same shape as the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d in plan view. The first infrared heaters 561a to 561d, the second infrared heaters 562a to 562c, and the third infrared heaters 563a to 563d correspond to the infrared heater 6 according to the first embodiment.

As described above, according to the present embodiment, the heater unit 560 including the plurality of infrared heaters 6 spread over one surface has the following effects. Since the infrared heater 6 is provided, the balance of the temperature distribution of the heater unit 560 can be improved. In addition, when the plurality of infrared heaters 6 can be individually controlled, the output of some infrared heaters 6 can be made larger than the output of other infrared heaters 6, so that the temperature of the substrate 10 can be reduced. A well-distributed heating can be performed. For example, when the temperatures of the four corners of the substrate 10 are low, the output of the infrared heater 6 arranged at the position corresponding to that portion is made higher than the output of the other infrared heaters 6, so that the temperature is increased only at that portion. Thus, the temperature distribution of the entire substrate 10 can be improved.

Further, the heater unit 560 has a plurality of first infrared heaters 561a to 561d arranged in a line in the first direction V1 and a plurality of second infrared heaters 562a to 562a in a direction parallel to the first direction V1. 562c, and the second infrared heaters 562a to 562c are adjacent to the boundary portion of the two adjacent first infrared heaters 561a to 561d in the second direction V2 intersecting the first direction V1 in the second direction V2. The following effects can be obtained by arranging them up to 561d. Since the temperature distributions of the first infrared heaters 561a to 561d and the second infrared heaters 562a to 562c can be complemented with each other, the balance of the temperature distribution of the heater unit 560 can be further improved.
Furthermore, the second infrared heaters 562a to 562c are arranged so as to be adjacent to the boundary between two adjacent third infrared heaters 563a to 563d and the third infrared heaters 563a to 563d in the second direction V2. Since the temperature distributions of the third infrared heaters 563a to 563d and the second infrared heaters 562a to 562c can be complemented with each other, the balance of the temperature distribution of the heater unit 560 can be further improved.

In addition, the second infrared heaters 562a to 562c have the same shape as the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d in a plan view, so that the following effects are achieved. As compared with the case where the second infrared heaters 562a to 562c have different shapes from the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d in plan view, the balance of the temperature distribution of the heater unit 560 can be more surely achieved. Can be improved.
In addition, even if the substrate size is changed, the number of the infrared heaters 6 is changed and the infrared heaters 6 are arranged at equal intervals, so that the substrate 10 can be heated with a good temperature distribution. By the way, when the infrared heater is a simple straight tube, it is necessary to extend the length of the straight tube as the substrate size increases, and thus it may be difficult to allow thermal expansion of the infrared heater. However, according to the present embodiment, since the size of the infrared heater 6 does not change even if the size of the substrate increases, thermal expansion of the infrared heater 6 can be easily allowed.

(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described with reference to FIG.
FIG. 15 is a plan view of the heater unit 660 according to the fifth embodiment.
In the fifth embodiment, the arrangement of the infrared heaters is particularly different from that of the fourth embodiment. 15, the same components as those in the fourth embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

<Heater unit>
As shown in FIG. 15, the heater unit 660 according to this embodiment includes a first infrared heater group 561, a second infrared heater group 662, and a third infrared heater group 563.

The second infrared heaters 662a to 662c have a shape obtained by rotating the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d by 90 degrees in a plan view. Specifically, the second infrared heaters 662a to 662c rotate 90 degrees clockwise (clockwise) from the center of the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d in a plan view. It has a different shape. The first infrared heaters 561a to 561d, the second infrared heaters 662a to 662c, and the third infrared heaters 563a to 563d correspond to the infrared heater 6 according to the first embodiment.

As described above, according to the present embodiment, the second infrared heaters 662a to 662c have a shape obtained by rotating the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d by 90 degrees in a plan view. Thus, the temperature distribution resulting from the shape of the infrared heater 6 can be complemented by the first infrared heaters 561a to 561d, the second infrared heaters 662a to 662c, and the third infrared heaters 563a to 563d, and thus the heater unit 660. The balance of the temperature distribution of can be further improved.

The shapes, combinations, and the like of the constituent members shown in the above-described example are merely examples, and can be variously changed based on design requirements and the like.
Further, in the above embodiment, the substrate, the heating unit, and the infrared heater are housed in the common chamber, but the present invention is not limited to this. For example, the heating unit and the infrared heater may be housed in different chambers.

In the above embodiment, both the heating unit and the infrared heater can heat the substrate step by step, but the present invention is not limited to this. For example, at least one of the heating unit and the infrared heater may be capable of heating the substrate stepwise. Further, both the heating unit and the infrared heater may be capable of heating the substrate only at a constant temperature.

Further, in the above embodiment, the inner wall of the chamber may be capable of reflecting infrared rays. For example, the inner wall of the chamber may be a mirror surface (reflection surface) made of a metal such as aluminum. As a result, the temperature uniformity in the chamber can be improved as compared with the case where the inner wall of the chamber is capable of absorbing infrared rays.

Further, in the above-described embodiment, a plurality of carrying rollers are used as the carrying unit, but the present invention is not limited to this. For example, a belt conveyor may be used as the transport unit, or a linear motor actuator may be used. For example, the belt conveyor and the linear motor actuator may be replenishable in the X direction. Thereby, the transport distance of the substrate in the X direction can be adjusted.

When a configuration other than the configuration shown in FIG. 3 (the configuration in which the passage is formed in the transport unit) is adopted as the transport unit, the size of the heating unit in plan view is equal to or larger than the size of the substrate in plan view. It may be. As a result, the in-plane uniformity of the heating temperature of the substrate can be further increased as compared with the case where the size of the heating unit in plan view is smaller than the size of the substrate in plan view.

Further, in the above-described embodiment, in the depressurizing step and the first heating step, the heating unit is turned on and the infrared heater is turned off, but the present invention is not limited to this. For example, in the depressurizing step and the first heating step, the heating unit and the infrared heater may be turned on.

Further, in the above embodiment, the outer shape of the infrared heater may have a rectangular shape in a plan view, and the first introduction part and the second introduction part may be arranged to face each other at the central part of one side of the infrared heater. .. According to this configuration, the first introduction part and the second introduction part are separated from each other to some extent, so that the infrared heater can be prevented from locally lowering the temperature. Therefore, the balance of the temperature distribution of the infrared heater can be improved.

In addition, each component described as the embodiment or the modification thereof can be appropriately combined without departing from the gist of the present invention, and a part of the plurality of combined components. It is also possible not to use.

Hereinafter, the present invention will be described more specifically by way of examples, but the present invention is not limited to the following examples.

The present inventor has confirmed by the following evaluation that the infrared heater can improve the temperature distribution balance of the infrared heater by including the cover portion arranged so as to cover the bend portion from the outside.

(Comparative example)
As the infrared heater of the comparative example, one having only a straight portion and a bend portion was used. That is, the comparative example does not include the cover portion.

(Example)
The infrared heater of the example used has a straight portion, a bend portion and a cover portion. That is, the infrared heater of the example further includes a cover portion as compared with the comparative example. The infrared heater of the example corresponds to the infrared heater 6 (see FIG. 2) according to the first embodiment.

(Evaluation condition)
Hereinafter, the evaluation conditions for the temperature distribution of the substrate during heating by the infrared heater in the comparative example and the example will be described.
A glass substrate was used as the substrate. The substrate was placed directly below the infrared heater. The substrate temperature was 450°C.
In the substrate, the temperature of the portion corresponding to the central portion in the longitudinal direction of the straight portion (that is, the portion overlapping in the normal direction of the substrate) (hereinafter referred to as “straight portion temperature”) was measured. Further, the temperature of the portion corresponding to the bend portion (that is, the portion overlapping in the normal direction of the substrate) of the substrate (hereinafter referred to as “bend portion temperature”) was measured. Then, the difference between the straight portion temperature and the bend portion temperature (hereinafter referred to as "temperature difference") was calculated.

(Results of evaluation of the temperature distribution of the substrate during heating with an infrared heater)
In the case of the comparative example, the bend portion became darker than the straight portion. From this, it was found that the bend temperature was lower than the straight temperature. In the case of the comparative example, the temperature difference was 5.8°C.

In the case of the example, the bend portion became darker than the straight portion. However, the bend part of the example became brighter than the bend part of the comparative example. As a result, it was found that even in the example, the bend temperature was lower than the straight temperature, but the degree of reduction was smaller than that in the comparative example. In the case of the example, the temperature difference was 2.4°C.
From the above, it was found that the infrared heater can improve the temperature distribution balance of the infrared heater by including the cover portion arranged so as to cover the bend portion from the outside. In addition, it has been found that the temperature distribution of the substrate can be improved.

1, 201... Substrate heating device 2... Chamber 3... Decompression unit 5, 205... Heating unit 5a...
Placement surface 6, 6A, 6B, 206, 306... Infrared heater 7, 207... Position adjustment unit 7
a, 275... Moving part 8... Conveying part 8h... Passing part 9... Temperature detecting part 10... Substrate 10a
... 1st surface 10b... 2nd surface 11... Recovery part 30a, 30b, 30c, 30d, 30e,
30f, 30g, 30h, 30i... Straight portions 31a, 31b, 31c, 31d, 3
1e, 31f, 31g, 31h... Bend part, 32... First cover part (cover part) 33, 2
33,333... 2nd cover part (cover part) 34... 1st introduction part 35... 2nd introduction part 20
5h... Insertion hole 276... Pin 560, 660... Heater unit 561a, 561b,
561c, 561d... 1st infrared heater 562a, 562b, 562c, 662a, 6
62b, 662c... Second infrared heater S1... Space between two adjacent straight portions
S2, S3... Space between the cover portion and the bend portion V1... First direction V2... Second direction

Claims (12)

A solution containing a polyamic acid is applied, and a plurality of temperature detection units capable of detecting the temperature at a plurality of points in the surface of the substrate to be heat-treated ,
A heater unit configured by laying a plurality of infrared heaters capable of heating the substrate with infrared rays on one surface,
A control unit capable of individually controlling the plurality of infrared heaters,
A chamber capable of accommodating the substrate and the plurality of infrared heaters;
A substrate heating apparatus comprising a decompression unit capable of decompressing the inside of the chamber ,
The temperature detection unit is arranged outside the chamber and detects the temperature in the plane of the substrate in a non-contact manner.
Substrate heating device . The infrared heater has a tubular shape bent at a plurality of points,
The substrate heating apparatus according to claim 1, further comprising: a bend portion that is bent outward to be convex, and a cover portion that is arranged to cover at least a part of the bend portion from the outside. The infrared heater has a longitudinal direction in the first direction, and further includes a plurality of straight portions arranged side by side in a second direction intersecting the first direction,
The bend portion connects the ends of two adjacent straight portions,
The substrate heating device according to claim 2, wherein the cover portion linearly extends in the second direction so as to cover the plurality of bend portions from the outside. The infrared heater further includes a first introduction part provided at one end of the infrared heater, and a second introduction part provided at the other end of the infrared heater,
The substrate heating device according to claim 2, wherein at least one of the first introduction portion and the second introduction portion is provided at an end portion of the cover portion. The substrate heating device according to any one of claims 1 to 4, further comprising a heating unit which is arranged on the opposite side of the infrared heater with the substrate interposed therebetween and which is capable of heating the substrate. The substrate heating device according to claim 5, wherein at least one of the heating unit and the infrared heater can heat the substrate stepwise. The substrate heating device according to claim 5, wherein the heating unit is a hot plate. The substrate heating apparatus according to claim 1, further comprising a gas supply unit capable of supplying an inert gas into the chamber. A solution containing a polyamic acid is applied, and a plurality of temperature detection units capable of detecting the temperature at a plurality of points in the surface of the substrate to be heat-treated,
A heater unit configured by laying a plurality of infrared heaters capable of heating the substrate with infrared rays on one surface,
A control unit capable of individually controlling the plurality of infrared heaters,
A chamber capable of accommodating the substrate and the plurality of infrared heaters;
And a decompression unit capable of decompressing the inside of the chamber.
A substrate heating device,
The infrared heater has a tubular shape bent at a plurality of points,
A bend part bent so as to be convex outward, and a cover part arranged so as to cover at least a part of the bend part from the outside,
The infrared heater further includes a first introduction part provided at one end of the infrared heater, and a second introduction part provided at the other end of the infrared heater,
At least one of the first introduction part and the second introduction part is provided at an end of the cover part.
Substrate heating device. A preparatory step of preparing the substrate heating apparatus according to any one of claims 1 to 9 ;
After the preparing step, an arrangement step of arranging the substrate coated with the solution containing the polyamic acid inside the chamber of the substrate heating apparatus,
After the arranging step, the substrate is heated by the plurality of infrared heaters to form a polyimide film.
A method of manufacturing a polyimide film, wherein in the film forming step, the plurality of infrared heaters are individually controlled to heat the substrate. The substrate heating apparatus further includes a gas supply unit capable of supplying an inert gas into the chamber,
The method of manufacturing a polyimide film according to claim 10 , wherein in the film forming step, the substrate is heated while the inert gas is supplied from the gas supply unit into the chamber. A solution containing a polyamic acid is applied, and a plurality of temperature detection units capable of detecting the temperature at a plurality of points in the surface of the substrate to be heat-treated,
A heater unit configured by laying a plurality of infrared heaters capable of heating the substrate with infrared rays on one surface,
A control unit capable of individually controlling the plurality of infrared heaters,
A chamber capable of accommodating the substrate and the plurality of infrared heaters;
A decompression unit capable of decompressing the inside of the chamber,
A preparatory step of preparing a substrate heating apparatus including a gas supply unit capable of supplying an inert gas into the chamber;
After the preparation step, an arrangement step of arranging the substrate coated with the solution containing the polyamic acid inside the chamber of the substrate heating apparatus,
After the arranging step, the substrate is heated by the plurality of infrared heaters, and the substrate is heated while supplying the inert gas into the chamber from the gas supply unit to obtain a polyimide film. And a film process,
In the film forming step, the plurality of infrared heaters are individually controlled to heat the substrate.
Method for manufacturing polyimide film.

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