CN107785240B - Substrate heating device, substrate heating method, and infrared heater - Google Patents

Substrate heating device, substrate heating method, and infrared heater Download PDF

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Publication number
CN107785240B
CN107785240B CN201710573155.8A CN201710573155A CN107785240B CN 107785240 B CN107785240 B CN 107785240B CN 201710573155 A CN201710573155 A CN 201710573155A CN 107785240 B CN107785240 B CN 107785240B
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Prior art keywords
substrate
infrared heater
heating
infrared
cover
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CN107785240A (en
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加藤茂
佐保田勉
山谷谦一
升芳明
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

The substrate heating apparatus of the present embodiment includes: a depressurizing unit configured to depressurize an atmosphere of the accommodation space of the substrate coated with the solution; an infrared heater capable of heating the substrate by infrared rays; the infrared heater is in a tube shape bent at a plurality of positions, and includes: a bending part which is bent in a manner of protruding outwards; and a cover portion configured to cover at least a part of the bent portion from outside.

Description

Substrate heating device, substrate heating method, and infrared heater
Technical Field
The invention relates to a substrate heating device, a substrate heating method and an infrared heater.
Background
In recent years, there are the following market demands: a resin substrate having flexibility is used as a substrate for an electronic device instead of a glass substrate. For example, polyimide film is used as such a resin substrate. For example, a polyimide film is formed by applying a solution of a precursor of polyimide on a substrate, and then performing a step of heating the substrate (heating step). As a solution of a precursor of polyimide, for example, there is a polyamic acid varnish composed of a polyamic acid and a solvent (for example, refer to patent document 1 and patent document 2).
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2001-210632
Patent document 2: international publication No. 2009/104371
Patent document 3: japanese patent laid-open No. 2006-170524
Disclosure of Invention
Technical problem to be solved by the invention
However, the heating process described above includes: a first step of evaporating the solvent at a lower temperature and a second step of curing the polyamic acid at a higher temperature. It is considered that in the second step, an infrared heater is used, and the substrate can be heated by infrared rays. As an infrared heater, for example, a W-type or U-type infrared heater is known (for example, refer to patent document 3). However, the W-type or U-type infrared heater has a problem in that a portion bent so as to protrude outward is exposed, and the exposed portion is cooled as compared with other portions, so that the temperature distribution of the infrared heater is improved.
In view of the above, an object of the present invention is to provide a substrate heating apparatus, a substrate heating method, and an infrared heater, which can improve the balance of the temperature distribution of the infrared heater.
Solution to the above technical problems
A substrate heating apparatus according to an aspect of the present invention includes: a depressurizing unit configured to depressurize an atmosphere of the accommodation space of the substrate coated with the solution; an infrared heater capable of heating the substrate by infrared rays, the infrared heater having a tube shape bent at a plurality of portions, and comprising: a bending part which is bent in a manner of protruding outwards; and a cover portion configured to cover at least a part of the bent portion from outside.
According to this configuration, since the infrared heater includes the cover portion arranged to cover at least a part of the bent portion from the outside, the bent portion can be prevented from being exposed, and the bent portion can be prevented from being cooled as compared with other portions. That is, since at least a part of the bending portion can be heated from the outside by the cover portion, the temperature difference between the bending portion and the other portion can be suppressed. Therefore, the temperature distribution of the infrared heater can be balanced.
In the above substrate heating apparatus, the infrared heater may further include a plurality of straight portions having long sides in a first direction and arranged in parallel in a second direction intersecting the first direction, the bent portions may connect end portions of the adjacent 2 straight portions, and the cover portion may extend linearly in the second direction so as to cover the plurality of bent portions from outside.
According to this configuration, the cover portion linearly extends in the second direction so as to cover the plurality of bent portions from the outside, and thus the plurality of bent portions can be prevented from being exposed at once, and therefore the plurality of bent portions can be prevented from being cooled down as compared with other portions at once. That is, since the plurality of bent portions can be heated from the outside by the cover portion at once, it is possible to suppress the temperature difference between the plurality of bent portions and other portions. Therefore, the temperature distribution balance of the infrared heater can be effectively improved. Further, the infrared heater further includes a plurality of straight portions, which have long sides in the first direction and are arranged in parallel in the second direction intersecting the first direction, whereby the heat generation temperature of each other can be increased, and therefore the balance of the temperature distribution of the infrared heater can be improved at a higher temperature.
In the above substrate heating apparatus, the gap between the cover portion and the bent portion may be smaller than the gap between 2 adjacent straight portions.
According to this configuration, compared with the case where the interval between the cover portion and the bent portion is equal to or more than the interval between 2 adjacent straight portions, the exposure of the bent portion can be more reliably avoided, and therefore, the occurrence of temperature drop in the bent portion compared with other portions can be more reliably suppressed. That is, since at least a part of the bending portion can be heated from the outside by the cover portion, the temperature difference between the bending portion and the other part can be suppressed more reliably. Therefore, the temperature distribution of the infrared heater can be more reliably balanced.
In the above substrate heating apparatus, the infrared heater may further include: a first introduction unit provided at one end of the infrared heater; and a second introduction portion provided at the other end of the infrared heater, wherein at least one of the first introduction portion and the second introduction portion is provided at an end portion of the cover portion.
However, if the first introduction portion and the second introduction portion are too close, the temperature of the portion tends to be lower than the temperature of the other portion. However, according to this configuration, the first introduction portion and the second introduction portion are separated to some extent, so that the infrared heater can be suppressed from being locally cooled. Therefore, the temperature distribution of the infrared heater can be balanced.
In the above substrate heating apparatus, the external shape of the infrared heater may be rectangular in plan view, and the first introduction portion and the second introduction portion may be disposed so as to face each other at a central portion of one side of the infrared heater.
According to this configuration, the first introduction portion and the second introduction portion are separated to some extent, so that the infrared heater can be prevented from being locally cooled. Therefore, the temperature distribution of the infrared heater can be balanced.
In the above substrate heating apparatus, the external shape of the infrared heater may be rectangular in plan view, and the first introduction portion may be disposed on one side of the infrared heater, and the second introduction portion may be disposed on the other side of the one side.
According to this configuration, since the portion of the infrared heater from either the first introduction portion or the second introduction portion to the bent portion is in the shape of a U-tube bent at 2 portions (i.e., in the shape of three sides other than the one side of the infrared heater), the flexibility of the infrared heater can be improved as compared with the case of a straight tube or an L-tube. Therefore, even if the one side of the infrared heater thermally expands or contracts, the one side can be allowed to expand or contract by utilizing the flexibility of the infrared heater.
In the above substrate heating apparatus, the external shape of the infrared heater may be rectangular in plan view, the first introduction portion may be disposed at a corner of the infrared heater, and the second introduction portion may be disposed at a diagonal portion of the corner.
According to this configuration, the first and second introduction portions are disposed at positions symmetrical with respect to the center of the infrared heater in a plan view, and the first and second introduction portions are farther apart. Thus, even when the first introduction portion and the second introduction portion are cooled further than the other portions, the temperature of the infrared heater is not lowered, and the infrared heater can be prevented from being excessively lowered locally, so that the temperature distribution of the infrared heater can be balanced as much as possible.
In the above substrate heating apparatus, the infrared heater may have a point-symmetrical shape in a plan view.
According to this configuration, the temperature distribution of the infrared heater can be more reliably balanced than when the infrared heater is in an asymmetric shape in a plan view.
In the above substrate heating apparatus, the external shape of the infrared heater may be rectangular in plan view, and the first introduction portion and the second introduction portion may be disposed adjacent to one corner of the infrared heater.
According to this configuration, since the distance between the first introduction portion and the second introduction portion is minimized, thermal expansion or thermal contraction of the infrared heater can be reliably suppressed.
In the above substrate heating apparatus, at least a part of the first introduction portion and the second introduction portion may be inserted into an outer shape of the infrared heater in a plan view.
According to this configuration, the first introduction portion and the second introduction portion can be prevented from being blocked when the infrared heater is disposed, and thus the degree of freedom in layout can be improved. For example, when a plurality of infrared heaters are laid on one surface, the adjacent 2 infrared heaters can be prevented from interfering with each other at the first introduction portion and the second introduction portion, and therefore the plurality of infrared heaters can be laid in order.
The substrate heating apparatus may further include a heater unit configured to lay a plurality of the infrared heaters on one surface.
According to this configuration, since the infrared heater is provided, the temperature distribution of the heater unit can be balanced. In addition, when a plurality of infrared heaters can be individually controlled, the output of some of the infrared heaters can be made larger than the output of other infrared heaters, so that the substrate can be heated with good temperature distribution. For example, when the temperature of the four corners of the substrate is low, the output of the infrared heater disposed at the position corresponding to the portion is made larger than the output of the other infrared heaters, and thus only the temperature of the portion is increased, and the temperature distribution of the entire substrate can be increased.
In the above substrate heating apparatus, the heater unit may include: a plurality of first infrared heaters laid in one direction; and a plurality of second infrared heaters disposed so as to be laid in a direction parallel to the one direction, wherein the second infrared heaters are disposed so as to be adjacent to boundary portions of 2 adjacent first infrared heaters, and are disposed so as to be laid in a direction intersecting the one direction.
According to this configuration, the temperature distribution of the first infrared heater and the temperature distribution of the second infrared heater can be mutually complemented, so that the balance of the temperature distribution of the heater unit can be further improved.
In the above substrate heating apparatus, the second infrared heater may have the same shape as the first infrared heater in a plan view.
According to this configuration, the balance of the temperature distribution of the heater unit can be more reliably improved than in the case where the second infrared heater has a shape different from that of the first infrared heater in a plan view. Further, even if the substrate size is changed, the infrared heaters can be arranged at equal intervals by changing the number of the infrared heaters, and the substrate can be heated with good temperature distribution. However, in the case where the infrared heater is a simple straight pipe, if the substrate size is increased, the length of the straight pipe needs to be increased, and therefore, there is a possibility that thermal expansion of the infrared heater is difficult to be allowed. However, according to this configuration, even if the substrate size is increased, the infrared heater does not change in size, and therefore thermal expansion of the infrared heater can be easily allowed.
In the substrate heating apparatus, the second infrared heater may have a shape in which the first infrared heater is rotated by 90 degrees in a plan view.
According to this configuration, the temperature distribution caused by the shape of the infrared heater can be mutually supplemented by the first infrared heater and the second infrared heater, so that the balance of the temperature distribution of the heater unit can be further improved.
The substrate heating apparatus may further include a heating unit that is disposed on a side opposite to the infrared heater with the substrate interposed therebetween and that is capable of heating the substrate.
According to this configuration, the substrate can be heated more effectively because the heating by the heating unit and the heating by the infrared heater complement each other.
The substrate heating apparatus may further include a chamber capable of accommodating the substrate, the heating unit, and the infrared heater.
According to this configuration, the substrate can be efficiently heated because the heating temperature of the substrate can be managed within the cavity.
In the above substrate heating apparatus, the substrate, the heating unit, and the infrared heater may be accommodated in the common chamber.
According to this configuration, the heating process of the substrate by the heating unit and the heating process of the substrate by the infrared heater can be performed in the common chamber. That is, there is no need to take time for transporting the substrate between the different 2 chambers, as in the case where the heating section and the infrared heater are accommodated in the chambers different from each other. Therefore, the heat treatment of the substrate can be performed more efficiently. In addition, compared with the case of having 2 different chambers, the entire device can be miniaturized.
In the above substrate heating apparatus, the solution may be applied only to the first surface of the substrate, and the heating portion may be disposed on a side opposite to the first surface of the substrate, that is, on a side of the second surface.
According to this configuration, the heat generated from the heating portion is transferred from the second surface side of the substrate to the first surface side, so that the substrate can be heated efficiently. In addition, evaporation or imidization (for example, evacuation during film formation) of a solution applied to the substrate can be efficiently performed while the substrate is heated by the heating unit.
In the above substrate heating apparatus, at least one of the heating unit and the infrared heater may be configured to heat the substrate stepwise.
According to this configuration, the substrate can be efficiently heated to be suitable for the film forming condition of the solution applied to the substrate, compared with the case where the heating section and the infrared heater can heat the substrate only at a constant temperature. Therefore, the solution applied to the substrate is dried stepwise, and can be cured well.
The substrate heating apparatus may further include a position adjusting unit configured to adjust a relative position between the substrate and at least one of the heating unit and the infrared heater.
According to this configuration, the heating temperature of the substrate can be easily adjusted as compared with the case where the position adjusting portion is not provided. For example, the heating unit and the infrared heater may be brought close to the substrate when the heating temperature of the substrate is to be increased, and the heating unit and the infrared heater may be brought away from the substrate when the heating temperature of the substrate is to be decreased. Therefore, the substrate is easily heated stepwise.
In the above substrate heating apparatus, the position adjustment unit may include a moving unit that can move the substrate between the heating unit and the infrared heater.
According to this configuration, the substrate is moved between the heating portion and the infrared heater, and the heating temperature of the substrate can be adjusted in a state where at least one of the heating portion and the infrared heater is disposed at a fixed position. Therefore, since there is no need to provide a separate device capable of moving at least one of the heating unit and the infrared heater, the heating temperature of the substrate can be adjusted with a simple configuration.
In the above substrate heating apparatus, a transport section capable of transporting the substrate may be provided between the heating section and the infrared heater, and a passage section capable of passing the moving section may be formed in the transport section.
According to this configuration, when the substrate is moved between the heating section and the infrared heater, the substrate can be passed through the passage section, and therefore, the substrate does not need to be moved by bypassing the conveying section. Therefore, the substrate can be smoothly moved with a simple configuration without providing a separate device for moving the substrate around the transport section.
In the above substrate heating apparatus, the moving portion may include a plurality of pins that are capable of supporting a second surface opposite to the first surface of the substrate and of moving in a normal direction of the second surface, and the tips of the plurality of pins may be disposed in a plane parallel to the second surface.
According to this configuration, the substrate can be heated while being stably supported, so that the solution applied to the substrate can be stably formed into a film.
In the above substrate heating apparatus, a plurality of insertion holes may be formed in the heating portion, the heating portion may be opened in a normal direction of the second surface, and distal ends of the plurality of pins may be brought into contact with the second surface via the plurality of insertion holes.
According to this configuration, the substrate can be transferred between the plurality of pins and the heating portion in a short time, and therefore the heating temperature of the substrate can be efficiently adjusted.
In the above substrate heating apparatus, the heating unit may be an electric heating plate.
According to this configuration, the heating temperature of the substrate can be made uniform in the surface of the substrate, and thus the film characteristics can be improved. For example, the substrate is heated in a state where one surface of the electric heating plate is brought into contact with the second surface of the substrate, whereby the in-plane uniformity of the heating temperature of the substrate can be improved.
The substrate heating apparatus may further include a temperature detection unit capable of detecting a temperature of the substrate.
With this configuration, the substrate temperature can be grasped in real time. For example, the substrate is heated based on the detection result of the temperature detection unit, and the substrate temperature can be suppressed from deviating from the target value.
The substrate heating apparatus may further include a recovery unit configured to recover a solvent volatilized from the solution applied to the substrate.
According to this configuration, the solvent volatilized from the solution can be prevented from being discharged to the factory side. In addition, in the case of a line connecting the recovery unit to the pressure reducing unit (vacuum pump), the solvent volatilized from the solution can be prevented from being liquefied again and flowing back into the vacuum pump. Further, the solvent volatilized from the solution can be reused as the cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid adhering to the scraping member that scrapes the liquid adhering to the nozzle, or the like.
A substrate heating method according to an aspect of the present invention includes: a depressurizing step of depressurizing the atmosphere of the accommodation space of the substrate coated with the solution; a heating step of heating the substrate by infrared rays, wherein the substrate is heated by infrared rays using an infrared heater having a tube shape bent at a plurality of positions, the heating step including: a bending part which is bent in a manner of protruding outwards; and a cover portion configured to cover at least a part of the bent portion from outside.
According to this method, in the heating step, since the infrared heater includes the cover portion configured to cover at least a part of the bent portion from the outside, the bent portion can be prevented from being exposed, and the bent portion can be prevented from being cooled as compared with other portions. That is, since at least a part of the bending portion can be heated from the outside by the cover portion, the temperature difference between the bending portion and the other portion can be suppressed. Therefore, the temperature distribution of the infrared heater can be balanced.
An infrared heater according to an aspect of the present invention is an infrared heater capable of heating a substrate by infrared rays, the infrared heater having a tubular shape bent at a plurality of positions, the infrared heater comprising: a bending part which is bent in a manner of protruding outwards; and a cover portion configured to cover at least a part of the bent portion from outside.
According to this configuration, since the infrared heater includes the cover portion arranged to cover at least a part of the bent portion from the outside, the bent portion can be prevented from being exposed, and the bent portion can be prevented from being cooled as compared with other portions. That is, since at least a part of the bending portion can be heated from the outside by the cover portion, the temperature difference between the bending portion and the other portion can be suppressed. Therefore, the temperature distribution of the infrared heater can be balanced.
Effects of the invention
According to the present invention, a substrate heating apparatus and an infrared heater can be provided, and the temperature distribution of the infrared heater can be balanced.
Drawings
Fig. 1 is a perspective view of a substrate heating apparatus according to a first embodiment.
Fig. 2 is a plan view showing the infrared heater of the first embodiment.
Fig. 3 is a diagram for explaining the arrangement relationship of the conveying roller, the substrate, and the heating unit.
Fig. 4 is a diagram for explaining an example of the operation of the substrate heating apparatus according to the first embodiment.
Fig. 5 is an operation explanatory diagram of the substrate heating apparatus according to the first embodiment, which is subsequent to fig. 4.
Fig. 6 is an operation explanatory diagram of the substrate heating apparatus of the first embodiment, which is subsequent to fig. 5.
Fig. 7 is a plan view showing a first modification of the infrared heater according to the first embodiment.
Fig. 8 is a plan view showing a second modification of the infrared heater according to the first embodiment.
Fig. 9 is a plan view of an infrared heater according to the second embodiment.
Fig. 10 is a diagram for explaining an example of the operation of the substrate heating apparatus according to the second embodiment.
Fig. 11 is an operation explanatory diagram of the substrate heating apparatus of the second embodiment shown in fig. 10.
Fig. 12 is an operation explanatory diagram of the substrate heating apparatus of the second embodiment, which is subsequent to fig. 11.
Fig. 13 is a plan view of an infrared heater according to the third embodiment.
Fig. 14 is a plan view of the heater unit of the fourth embodiment.
Fig. 15 is a plan view of a heater unit of the fifth embodiment.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ rectangular coordinate system is set, and positional relationships of the respective members are described with reference to the XYZ rectangular coordinate system. The predetermined direction in the horizontal plane is referred to as the X direction, the direction orthogonal to the X direction in the horizontal plane is referred to as the Y direction, and the directions orthogonal to the X direction and the Y direction (i.e., the vertical direction) are referred to as the Z direction.
(first embodiment)
< substrate heating apparatus >
Fig. 1 is a perspective view of a substrate heating apparatus 1 according to a first embodiment.
As shown in fig. 1, the substrate heating apparatus 1 includes: a chamber 2, a pressure reducing section 3, a gas supplying section 4, a heating section 5, an infrared heater 6, a position adjusting section 7, a conveying section 8, a temperature detecting section 9, a recovering section 11, a swinging section 12, and a control section 15. The control unit 15 generally controls the components of the substrate heating apparatus 1. For convenience, in fig. 1, the chamber 2, the pressure reducing portion 3, and the gas supply portion 4 are shown by two-dot chain lines.
< Chamber >
The chamber 2 can accommodate a substrate 10, a heating portion 5, and an infrared heater 6. The substrate 10, the heating section 5, and the infrared heater 6 are accommodated in the common chamber 2. The chamber 2 is formed in a rectangular parallelepiped box shape. Specifically, the chamber 2 is formed by: a rectangular top plate 21; a rectangular plate-shaped bottom plate 22 opposed to the top plate 21; a rectangular frame-shaped peripheral wall 23 is connected to the outer peripheral edges of the top plate 21 and the bottom plate 22. For example, a substrate carry-in/carry-out port 23a for carrying in and carrying out the substrate 10 with respect to the chamber 2 is provided on the-X direction side of the peripheral wall 23.
The chamber 2 is configured to be capable of accommodating the substrate 10 in a closed space. For example, the connection portions of the top plate 21, the bottom plate 22, and the peripheral wall 23 are joined with no gap by welding or the like, whereby the air tightness in the chamber 2 can be improved.
< pressure-reducing portion >
The pressure reducing portion 3 is connected to a corner portion near the substrate carry-in/out port 23a on the-Y direction side of the bottom plate 22. The pressure reducing portion 3 can reduce the pressure in the chamber 2. For example, the pressure reducing unit 3 includes a pressure reducing mechanism such as a pump mechanism. The pressure reducing mechanism includes a vacuum pump 13. The connection portion of the pressure reducing portion 3 is not limited to the corner portion near the substrate carry-in/out port 23a on the-Y direction side of the bottom plate 22. The pressure reducing portion 3 may be connected to the chamber 2.
The pressure reducing section 3 can reduce the pressure of the atmosphere in the accommodation space of the substrate 10, and the substrate 10 is coated with a solution for forming a polyimide film (polyimide) (hereinafter referred to as "polyimide forming liquid"). The polyimide-forming liquid contains, for example, polyamic acid or polyimide powder. The polyimide-forming liquid is applied only to the first surface 10a (upper surface) of the rectangular plate-like substrate 10. The solution is not limited to the polyimide-forming liquid. The solution may be used to form a predetermined film on the substrate 10.
< gas supply portion >
The gas supply portion 4 is connected to a corner portion near the ceiling 21 on the +x direction side of the peripheral wall 23. The gas supply unit 4 can adjust the state of the internal atmosphere of the chamber 2. The gas supply unit 4 supplies nitrogen into the chamber 2Gas (N) 2 ) Inert gases such as helium (He) and argon (Ar). The connection portion of the gas supply portion 4 is not limited to the corner portion near the ceiling 21 on the +x direction side of the peripheral wall 23. The gas supply unit 4 may be connected to the chamber 2. In addition, the substrate may be cooled by supplying a gas when the substrate is cooled.
The oxygen concentration of the internal atmosphere of the chamber 2 can be adjusted by the gas supply unit 4. The oxygen concentration (mass basis) of the internal atmosphere of the chamber 2 is preferably as low as possible. Specifically, the oxygen concentration in the internal atmosphere of the chamber 2 is preferably 100ppm or less, more preferably 20ppm or less.
For example, as described later, in the atmosphere in which the polyimide-forming liquid applied to the substrate 10 is cured, the curing of the polyimide-forming liquid can be easily performed by setting the oxygen concentration to the upper limit or less that is preferable.
< heating portion >
The heating portion 5 is disposed below the chamber 2. The heating section 5 can heat the substrate 10 at a first temperature. The heating unit 5 can heat the substrate 10 stepwise. The temperature range including the first temperature is, for example, a range of 20 ℃ or more and 300 ℃ or less. The heating portion 5 is disposed on the opposite side of the first surface 10a of the substrate 10, i.e., on the side of the second surface 10b (lower surface).
The heating portion 5 has a rectangular plate shape. The heating unit 5 can support the substrate 10 from below. The upper surface of the heating portion 5 is a flat surface along the first surface 10a of the substrate 10. The heating unit 5 is, for example, an electric heating plate.
< Infrared Heater >
An infrared heater 6 is disposed above the inside of the chamber 2. The infrared heater 6 can heat the substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 and the heating unit 5 are provided independently of each other. The infrared heater 6 can heat the substrate 10 stepwise. The temperature range including the second temperature is, for example, a range of 200 ℃ or more and 600 ℃ or less. The infrared heater 6 is disposed on one side of the first surface 10a of the substrate 10.
The infrared heater 6 is supported by a top plate 21. The infrared heater 6 is fixed in a fixed position near the ceiling 21 within the chamber 2. The peak wavelength range of the infrared heater 6 is, for example, a range of 1.5 μm or more and 4 μm or less. The peak wavelength range of the infrared heater 6 is not limited to the above range, and can be set to various ranges according to the required specification.
Fig. 2 is a plan view of the infrared heater 6 according to the first embodiment.
As shown in fig. 2, the infrared heater 6 has a tubular shape bent at a plurality of positions. The external shape of the infrared heater 6 is rectangular in plan view. The length of one side of the external shape of the infrared heater 6 is, for example, about 225 mm. The total length of the infrared heater 6 (the pipe length) is, for example, about 2475 mm. The infrared heater 6 is formed of, for example, a quartz tube.
The infrared heater 6 includes: a straight portion group 30, a curved portion group 31, cover portions 32, 33, a first introduction portion 34, and a second introduction portion 35.
The straight portion group 30 includes a plurality (for example, 9 in the present embodiment) of straight portions 30a to 30i. The straight portions 30a to 30i have a straight pipe shape having a long side (length) in the first direction V1. The plurality of straight portions 30a to 30i are arranged in parallel in a second direction V2 orthogonal (intersecting) to the first direction V1. The plurality of straight portions 30a to 30i are arranged at substantially the same interval S1 (pitch between the central axes) in the second direction V2. The spacing S1 between the adjacent 2 straight portions 30a to 30i is, for example, about 25 mm. Further, the straight portions 30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, 30i are arranged in this order from one side to the other side in the second direction V2.
The bending portion group 31 includes a plurality (for example, 8 in the present embodiment) of bending portions 31a to 31h. The bent portions 31a to 31h are bent so as to protrude outward. The bent portions 31a to 31h connect the end portions of the adjacent 2 straight portions 30a to 30 i. For example, the bent portion 31a connects one end of the straight portion 30a and one end of the straight portion 30 b. That is, the bent portions 31a to 31h are bent so as to connect the end portions of the adjacent 2 straight portions 30a to 30i in the infrared heater 6. The bent portions 31a to 31h have a U-shape protruding outward in a plan view. The bent portions 31a, 31b, 31c, 31d, 31e, 31f, 31g, and 31h are arranged in this order from one side to the other side in the second direction V2.
The cover portions 32 and 33 linearly extend in the second direction V2 so as to cover the plurality of bent portions 31a to 31h from the outside. Specifically, the cover portions 32 and 33 include: a first cover portion 32 covering the 4 curved portions 31b, 31d, 31f, 31h from one side in the first direction V1; the second cover 33 covers 4 curved portions 31a, 31c, 31e, 31g from the other side in the first direction V1.
The first cover 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover portion 32 has a straight tubular shape having a long side in the second direction V2. The space S2 (the interval between the central axes) between the first cover portion 32 and the bent portions 31b, 31d, 31f, 31h and the space S1 between the adjacent 2 straight portions 30a to 30i are substantially the same size. The space S2 between the first cover 32 and the bent portions 31b, 31d, 31f, 31h is, for example, about 25 mm.
The second cover 33 is connected to one end of the straight portion 30i on the other side in the second direction V2. The second cover 33 has an L-shape. That is, the second cover 33 includes: a cover main body 33a having a long side in the second direction V2; the extension 33b is connected to one end of the cover main body 33a, and has a long side in the first direction V1. The space S3 (the interval between the central axes) between the second cover 33 and the bent portions 31a, 31c, 31e, 31g and the space S1 between the adjacent 2 straight portions 30a to 30i are substantially the same size. The spacing S3 between the cover main body 33a and the bent portions 31a, 31c, 31e, 31g in the second cover portion 33 is, for example, about 25 mm. The distance between the extension portion 33b and the straight portion 30a in the second cover portion 33 is also about 25 mm.
The first introduction portion 34 is provided at one end of the infrared heater 6. The first introduction portion 34 is disposed on one side of the infrared heater 6. Specifically, the first introduction portion 34 is provided at one end of the first cover portion 32. A part of the first introduction portion 34 is inserted into the outer shape of the infrared heater 6 in a plan view.
The second introduction portion 35 is provided at the other end of the infrared heater 6. The second introduction portion 35 is disposed on the other side of one side of the infrared heater 6. The second introduction portion 35 is disposed on the opposite side of the first introduction portion 34 in the second direction V2. Specifically, the second introduction portion 35 is provided at one end of the extension portion 33b in the second cover portion 33. A part of the second introduction portion 35 is inserted into the outer shape of the infrared heater 6 in a plan view.
< position adjusting portion >
As shown in fig. 1, the position adjusting portion 7 is disposed below the chamber 2. The position adjusting unit 7 can adjust the relative position of the heating unit 5 and the infrared heater 6 with respect to the substrate 10. The position adjusting section 7 includes a moving section 7a and a driving section 7b. The moving portion 7a is a columnar member extending vertically (Z direction). The upper end of the moving portion 7a is fixed to the lower surface of the heating portion 5. The driving unit 7b can move the moving unit 7a up and down. The moving unit 7a can move the substrate 10 between the heating unit 5 and the infrared heater 6. Specifically, in a state where the substrate 10 is placed on the upper surface of the heating unit 5, the moving unit 7a can move the substrate 10 up and down by driving the driving unit 7b (see fig. 5 and 6).
The driving portion 7b is disposed outside the chamber 2. Therefore, even if particles are generated by driving the driving unit 7b, the intrusion of particles into the chamber 2 can be avoided by making the chamber 2 a closed space.
< transport section >
The conveying section 8 is disposed between the heating section 5 and the infrared heater 6 in the chamber 2. The transport section 8 is capable of transporting the substrate 10. The conveying section 8 is formed with a passing section 8h through which the moving section 7a can pass. The conveying section 8 includes a plurality of conveying rollers 8a arranged along the X direction, which is the conveying direction of the substrate 10.
The plurality of conveying rollers 8a are disposed on the +y direction side and the-Y direction side of the peripheral wall 23 so as to be apart from each other. That is, the passing portion 8h is a space between the conveying roller 8a on the +y direction side of the peripheral wall 23 and the conveying roller 8a on the-Y direction side of the peripheral wall 23.
For example, on the +y direction side and the-Y direction side of the peripheral wall 23, a plurality of axes (not shown) extending in the Y direction are arranged along the X direction, respectively. The conveying rollers 8a are driven by a driving mechanism (not shown) to rotate about respective axes.
Fig. 3 is a diagram for explaining the arrangement relationship of the conveying roller 8a, the substrate 10, and the heating unit 5. Fig. 3 corresponds to a top view of the substrate heating apparatus 1. For convenience, the cavity 2 is shown in fig. 3 by a two-dot chain line.
In fig. 3, reference numeral L1 is a distance (hereinafter referred to as "roller distance") between the conveying roller 8a on the +y direction side of the peripheral wall 23 and the conveying roller 8a on the-Y direction side of the peripheral wall 23. Further, reference numeral L2 is a length of the substrate 10 in the Y direction (hereinafter referred to as "substrate length"). Further, reference numeral L3 is a length of the heating portion 5 in the Y direction (hereinafter referred to as "heating portion length").
As shown in fig. 3, the roller distance interval L1 is smaller than the substrate length L2 and larger than the heating section length L3 (L3 < L1< L2). The roller distance L1 is larger than the heating section length L3, so that the moving section 7a can pass through the passing section 8h together with the heating section 5 (see fig. 5 and 6).
< temperature detection section >
As shown in fig. 1, the temperature detecting portion 9 is disposed outside the chamber 2. The temperature detection unit 9 can detect the temperature of the substrate 10. Specifically, the temperature detecting unit 9 is provided at an upper portion of the top plate 21. A window, not shown, is mounted on the top plate 21. The temperature detecting unit 9 passes through a window of the top plate 21 to detect the temperature of the substrate 10. The temperature detection unit 9 is, for example, a noncontact temperature sensor such as a radiation thermometer. Although only 1 temperature detecting unit 9 is illustrated in fig. 1, the number of temperature detecting units 9 is not limited to 1, and may be plural. For example, it is preferable to dispose the plurality of temperature detecting portions 9 at the center portion and four corners of the top plate 21.
< recovery section >
The recovery unit 11 is connected to a line of the decompression unit 3 (vacuum pump 13). The recovery unit 11 can recover the solvent volatilized from the polyimide-forming liquid applied to the substrate 10.
< swinging part >
The swinging portion 12 is disposed on the-X direction side of the substrate 10 in the chamber 2. The swinging portion 12 can swing the substrate 10. In a state where the substrate 10 is heated, the swinging portion 12 swings the substrate 10 in a direction along the XY plane or in a direction along the Z direction, for example. The arrangement position of the swinging portion 12 is not limited to the-X direction side of the substrate 10 in the chamber 2. The swinging portion 12 may be provided in the position adjusting portion 7, for example.
< method of heating substrate >
Next, a substrate heating method according to the present embodiment will be described. In the present embodiment, the substrate 10 is heated by the substrate heating apparatus 1 described above. The operations performed by the respective components of the substrate heating apparatus 1 are controlled by the control unit 15.
Fig. 4 is a diagram for explaining an example of the operation of the substrate heating apparatus 1 according to the first embodiment. Fig. 5 is an explanatory view of the operation of the substrate heating apparatus 1 according to the first embodiment, which is subsequent to fig. 4. Fig. 6 is an explanatory view of the operation of the substrate heating apparatus 1 according to the first embodiment, which is subsequent to fig. 5.
For convenience, the decompression section 3, the gas supply section 4, the temperature detection section 9, the recovery section 11, the swing section 12, and the control section 15 among the constituent elements of the substrate heating apparatus 1 are omitted from fig. 4 to 6.
The substrate heating method of the present embodiment includes: a depressurizing step, a first heating step, and a second heating step.
In the depressurizing step, the atmosphere of the accommodation space of the substrate 10 to which the polyimide-forming liquid is applied is depressurized.
As shown in fig. 4, in the depressurizing step, the substrate 10 is placed on the conveying roller 8a. In the depressurizing step, the heating portion 5 is located near the bottom plate 22. In the depressurizing step, the heating portion 5 and the substrate 10 are separated to such an extent that the heat of the heating portion 5 is not transferred to the substrate 10. In the depressurizing step, the power supply of the heating unit 5 is turned on. The temperature of the heating unit 5 is, for example, about 250 ℃. On the other hand, in the depressurizing step, the infrared heater 6 is powered off.
In the depressurizing step, the atmosphere in the accommodation space of the substrate 10 is depressurized from the atmospheric pressure to 500Pa or less. For example, in the depressurizing step, the intra-cavity pressure is gradually reduced from the atmospheric pressure to 20Pa.
In the depressurizing step, the oxygen concentration of the internal atmosphere of the chamber 2 is made as low as possible. For example, in the depressurizing step, the vacuum degree in the chamber 2 is set to 20Pa or less. This makes it possible to set the oxygen concentration in the chamber 2 to 100ppm or less.
After the depressurizing step, the substrate 10 is heated at a first temperature in a first heating step.
As shown in fig. 5, in the first heating step, the heating unit 5 is moved upward, and the substrate 10 is placed on the upper surface of the heating unit 5. Thus, by bringing the heating portion 5 into contact with the second surface 10b of the substrate 10, heat of the heating portion 5 is directly transferred to the substrate 10. In the first heating step, the temperature of the heating unit 5 is maintained at 250 ℃. Thus, the substrate temperature can rise to 250 ℃. On the other hand, in the first heating step, the power supply of the infrared heater 6 is always turned off.
In the first heating step, the heating section 5 is located in the passing section 8h (see fig. 1). For convenience, in fig. 5, the heating portion 5 before movement (position at the time of the depressurizing step) is shown by a two-dot chain line, and the heating portion 5 after movement (position at the time of the first heating step) is shown by a solid line.
In the first heating step, the substrate 10 is heated to a temperature in the range of 150 ℃ to 300 ℃ while maintaining the atmosphere of the pressure reducing step, so that the polyimide forming liquid applied to the substrate 10 is volatilized or imidized. For example, in the first heating step, the substrate 10 is heated for 10 minutes or less. Specifically, in the first heating step, the time for heating the substrate 10 is set to 3 minutes. For example, in the first heating step, the substrate temperature is gradually increased from 25 ℃ to 250 ℃.
After the first heating step, the substrate 10 is heated at a second temperature higher than the first temperature in the second heating step. In the second heating step, the substrate 10 is heated by using an infrared heater 6, and the infrared heater 6 is provided independently of the heating unit 5 used in the first heating step. The second heating step corresponds to the heating step described in the claims.
As shown in fig. 6, in the second heating step, the heating unit 5 is moved to a position higher than that in the first heating step, and the substrate 10 is brought close to the infrared heater 6. For example, in the second heating step, the temperature of the heating portion 5 is maintained at 250 ℃. In the second heating step, the power supply of the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 450 ℃. Thus, the substrate temperature can rise to 450 ℃. In the second heating step, the substrate 10 is closer to the infrared heater 6 than in the first heating step, and therefore, the heat of the infrared heater 6 is sufficiently transferred to the substrate 10.
In the second step, the heating unit 5 is located above the conveying roller 8a (passing unit 8h shown in fig. 1) and below the infrared heater 6. For convenience, in fig. 6, the heating unit 5 before movement (position at the time of the first heating step) is shown by a two-dot chain line, and the heating unit 5 after movement (position at the time of the second heating step) is shown by a solid line.
In the second heating step, the substrate 10 is heated in a state where the atmosphere in the pressure reducing step is maintained, so that the substrate temperature is changed from the temperature in the first heating step to 600 ℃ or lower. For example, in the second heating step, the substrate temperature is rapidly increased from 250 ℃ to 450 ℃. In the second heating step, the intra-cavity pressure is maintained at 20Pa or less.
The second heating process includes a cooling process of cooling the substrate 10. For example, in the cooling step, the substrate 10 is cooled while maintaining the atmosphere or the low-oxygen atmosphere in the pressure reducing step, and the substrate temperature is changed from the temperature in the second heating step to a temperature at which the substrate 10 can be transported. In the cooling step, the infrared heater 6 is powered off.
Through the above steps, the polyimide film can be formed by volatilizing or imidizing the polyimide forming liquid applied to the substrate 10 and rearranging the molecular chains at the time of imidizing the polyimide forming liquid applied to the substrate 10.
As described above, according to the present embodiment, since the infrared heater 6 includes the cover portions 32 and 33 configured to cover at least a part of the bent portions 31a to 31h from the outside, exposure of the bent portions 31a to 31h can be avoided, and the bent portions 31a to 31h can be prevented from being lowered in temperature as compared with other portions. That is, at least a part of the bent portions 31a to 31h can be heated from the outside by the cover portions 32 and 33, so that the temperature difference between the bent portions 31a to 31h and other parts can be suppressed. Therefore, the temperature distribution of the infrared heater 6 can be balanced.
Further, since the cover portions 32 and 33 linearly extend in the second direction V2 so as to cover the plurality of bent portions 31a to 31h from the outside, the plurality of bent portions 31a to 31h can be prevented from being exposed at once, and therefore, the plurality of bent portions 31a to 31h can be prevented from being cooled down as compared with other portions at once. That is, the plurality of bent portions 31a to 31h can be heated from the outside by the cover portions 32 and 33 at once, so that the plurality of bent portions 31a to 31h and other portions can be suppressed from generating a temperature difference. Therefore, the temperature distribution of the infrared heater 6 can be efficiently balanced. The infrared heater 6 further includes a plurality of straight portions 30a to 30i having a long side in the first direction V1 and arranged in parallel in the second direction V2 intersecting the first direction V1, and the plurality of straight portions 30a to 30i are adjacent to each other, whereby the heat generation temperature of each other can be increased, and therefore, the balance of the temperature distribution of the infrared heater 6 can be improved at a relatively high temperature.
However, if the first introduction portion 34 and the second introduction portion 35 are too close, the temperature of this portion tends to be lower than the temperature of the other portion. However, according to the present embodiment, since both the first introduction portion 34 and the second introduction portion 35 are provided at the end portions of the cover portions 32 and 33, the first introduction portion 34 and the second introduction portion 35 are separated to some extent, and therefore, the infrared heater 6 can be suppressed from being locally cooled. Therefore, the temperature distribution of the infrared heater 6 can be balanced. Further, according to the present embodiment, by setting the distance between the first introduction portion 34 and the second introduction portion 35 (the length of one side of the external shape of the infrared heater 6) to about 225mm, even if the top plate 21 of the chamber 2 thermally expands or contracts, the expansion or contraction can be allowed.
The external shape of the infrared heater 6 is rectangular in plan view, and the first introduction portion 34 is disposed on one side of the infrared heater 6 and the second introduction portion 35 is disposed on the other side of the one side, thereby achieving the following effects. Since the portion of the infrared heater 6 from the second introduction portion 35 to the bent portion 31h is formed in a U-shape bent at 2 portions (i.e., a shape along three sides except the one side of the infrared heater 6), flexibility of the infrared heater 6 can be improved as compared with the case of a straight tube shape and an L-shape. Therefore, even if the one side of the infrared heater 6 thermally expands or contracts, the one side can be allowed to expand or contract due to the flexibility of the infrared heater 6.
In addition, since both the first introduction portion 34 and the second introduction portion 35 enter the outer shape of the infrared heater 6 in a plan view, it is possible to avoid the first introduction portion 34 and the second introduction portion 35 from becoming an obstacle when the infrared heater 6 is disposed, and thus it is possible to improve the degree of freedom in layout. For example, when a plurality of infrared heaters 6 are laid on one surface, the adjacent 2 infrared heaters 6 can be prevented from interfering with the first introduction portion 34 and the second introduction portion 35, and therefore the plurality of infrared heaters 6 can be laid in order.
Further, the substrate heating device further includes a heating portion 5 which is disposed on the opposite side of the infrared heater 6 with the substrate 10 interposed therebetween and which can heat the substrate 10, and thereby the substrate 10 can be heated more effectively because the heating portion 5 heats the substrate in addition to the infrared heater 6.
Further, the chamber 2 capable of accommodating the substrate 10, the heating portion 5, and the infrared heater 6 is provided, and thus the heating temperature of the substrate 10 can be managed in the chamber 2, and therefore the substrate 10 can be efficiently heated.
Further, the substrate 10, the heating unit 5, and the infrared heater 6 are accommodated in the common chamber 2, and thus the heating process of the substrate 10 by the heating unit 5 and the heating process of the substrate 10 by the infrared heater 6 can be performed together in the common chamber 2. That is, there is no need to require a time for transporting the substrate 10 between the different 2 chambers 2, as in the case where the heating unit 5 and the infrared heater 6 are accommodated in the chambers 2 different from each other. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. In addition, compared with the case where 2 different chambers 2 are provided, the entire apparatus can be miniaturized.
The polyimide-forming liquid is applied only to the first surface 10a of the substrate 10, and the heating portion 5 is disposed on the opposite side of the first surface 10a of the substrate 10, that is, on the side of the second surface 10b, thereby achieving the following effects. Since the heat generated from the heating portion 5 is transferred from the side of the second surface 10b of the substrate 10 toward the side of the first surface 10a, the substrate 10 can be efficiently heated. In addition, the evaporation or imidization (for example, the evacuation during film formation) of the polyimide forming liquid applied to the substrate 10 can be efficiently performed while the substrate 10 is heated by the heating unit 5.
The heating unit 5 and the infrared heater 6 can heat the substrate 10 stepwise, and thus have the following effects. Compared with the case where the heating section 5 and the infrared heater 6 can heat the substrate 10 only at a constant temperature, the substrate 10 can be heated efficiently so as to be suitable for the film forming conditions of the polyimide forming liquid applied to the substrate 10. Therefore, the polyimide-forming liquid applied to the substrate 10 is dried stepwise, and can be cured well.
Further, the position adjusting portion 7 is provided, and the relative positions of the heating portion 5 and the infrared heater 6 and the substrate 10 can be adjusted, whereby the heating temperature of the substrate 10 can be easily adjusted as compared with the case where the position adjusting portion 7 is not provided. For example, when the heating temperature of the substrate 10 is to be increased, the heating unit 5 and the infrared heater 6 can be brought close to the substrate 10, and when the heating temperature of the substrate 10 is to be decreased, the heating unit 5 and the infrared heater 6 can be brought away from the substrate 10. Therefore, the substrate 10 is easily heated stepwise.
The position adjustment unit 7 includes a moving unit 7a that can move the substrate 10 between the heating unit 5 and the infrared heater 6, and thus, by moving the substrate 10 between the heating unit 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted while at least one of the heating unit 5 and the infrared heater 6 is placed at a fixed position. Therefore, since there is no need to provide a separate device capable of moving at least one of the heating unit 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted with a simple configuration.
Further, a conveying portion 8 capable of conveying the substrate 10 is provided between the heating portion 5 and the infrared heater 6, and a passing portion 8h capable of passing the moving portion 7a is formed in the conveying portion 8, thereby achieving the following effects. In the case of moving the substrate 10 between the heating section 5 and the infrared heater 6, the substrate 10 can be passed through the passing section 8h, so that the substrate 10 does not need to be moved by bypassing the conveying section 8. Therefore, the substrate 10 can be smoothly moved with a simple configuration without providing a separate device for moving the substrate 10 around the conveying section 8.
Further, since the heating unit 5 is an electric heating plate, the heating temperature of the substrate 10 can be made uniform in the surface of the substrate 10, and thus the film characteristics can be improved. For example, the substrate 10 is heated in a state where one surface of the electric heating plate is brought into contact with the second surface 10b of the substrate 10, whereby the in-plane uniformity of the heating temperature of the substrate 10 can be improved.
Further, the temperature detecting unit 9 is provided to detect the temperature of the substrate 10, thereby grasping the temperature of the substrate 10 in real time. For example, by heating the substrate 10 based on the detection result of the temperature detection unit 9, it is possible to suppress the temperature of the substrate 10 from deviating from the target value.
The apparatus further includes a recovery unit 11 that can recover the solvent volatilized from the polyimide-forming liquid applied to the substrate 10, thereby preventing the solvent volatilized from the polyimide-forming liquid from being discharged to the factory side. In addition, in the case of a line connecting the recovery unit 11 to the pressure reducing unit 3 (vacuum pump 13), the solvent volatilized from the polyimide-forming liquid can be prevented from being liquefied again and flowing back into the vacuum pump 13. Further, the solvent volatilized from the polyimide-forming liquid can be reused as the cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid adhering to the scraping member that scrapes the liquid adhering to the nozzle, or the like.
Further, the infrared heater 6 is disposed on the first surface 10a side of the substrate 10, and thus, the heat generated from the infrared heater 6 is transferred from the first surface 10a side to the second surface 10b side of the substrate 10, and the heating of the heating portion 5 complements the heating of the infrared heater 6, so that the substrate 10 can be heated more effectively.
Further, the substrate 10 can be heated to the second temperature in a short time by the infrared heating of the infrared heater 6. Further, since the substrate 10 can be heated in a state where the infrared heater 6 is away from the substrate 10 (so-called noncontact heating), the substrate 10 can be kept clean (so-called clean heating).
Further, since the peak wavelength range of the infrared heater is 1.5 μm or more and 4 μm or less, and the wavelength in the range of 1.5 μm or more and 4 μm or less coincides with the absorption wavelength of glass, water, or the like, the substrate 10 and the polyimide-forming liquid applied to the substrate 10 can be heated more effectively.
Further, since the swinging portion 12 capable of swinging the substrate 10 is provided, the substrate 10 can be heated while swinging the substrate 10, and therefore, the temperature uniformity of the substrate 10 can be improved.
(first modification)
Next, a first modification of the first embodiment will be described with reference to fig. 7.
Fig. 7 is a plan view showing a first modification of the infrared heater according to the first embodiment.
In the first modification, the shape of the infrared heater is particularly different from that of the first embodiment. In fig. 7, the same components as those of the first embodiment are given the same reference numerals, and detailed description thereof is omitted.
< Infrared Heater >
As shown in fig. 7, the length and the overall length of one side of the external shape of the infrared heater 6A of the present modification are shorter than those of the infrared heater 6 (see fig. 2) of the first embodiment. For example, the length of one side of the external shape of the infrared heater 6A is about 210 mm. For example, the total length of the infrared heater 6A is about 1890 mm.
A plurality of straight portions 30a to 30g (for example, 7 in the present modification) are arranged in parallel in the second direction V2. The interval S1 between the adjacent 2 straight portions 30a to 30g of the present modification is larger than the interval S1 between the adjacent 2 straight portions 30a to 30g of the first embodiment. For example, the interval S1 between the adjacent 2 straight portions 30a to 30g in the present modification is about 30 mm.
The cover portions 32 and 33 linearly extend in the second direction V2 so as to cover a plurality of (for example, 6 in the present modification) curved portions 31a to 31f from the outside. Specifically, the cover portions 32 and 33 include: a first cover portion 32 covering 3 curved portions 31b, 31d, 31f from one side in the first direction V1; the second cover 33 covers 3 curved portions 31a, 31c, 31e from the other side in the first direction V1.
The space S2 between the first cover portion 32 and the bent portions 31b, 31d, 31f is substantially the same as the space S1 between the adjacent 2 straight portions 30a to 30 g. The distance between the first cover 32 and the bent portions 31b, 31d, 31f is, for example, about 30 mm.
The space S3 (the interval between the central axes) between the second cover 33 and the bent portions 31a, 31c, 31e is substantially the same as the space S1 between the adjacent 2 straight portions 30a to 30 g. The distance between the cover main body 33a and the bent portions 31a, 31c, 31e in the second cover portion 33 is, for example, about 30 mm. The distance between the extension portion 33b and the straight portion 30a in the second cover portion 33 is also about 30 mm.
As described above, according to the present modification, the length and the overall length of one side of the external shape of the infrared heater 6A are made shorter than those of the infrared heater 6 of the first embodiment, so that the infrared heater 6A can be reduced in weight and made compact. Further, the infrared heater 6A according to the present modification can be used without any problem as an infrared heater for low temperatures (for example, a heating temperature of 350 to 400 ℃), and thus can be reduced in cost.
(second modification)
Next, a second modification of the first embodiment will be described with reference to fig. 8.
Fig. 8 is a plan view showing a second modification of the infrared heater according to the first embodiment.
In the second modification, the shape of the infrared heater is particularly different from that of the first modification. In fig. 8, the same components as those of the first modification are given the same reference numerals, and detailed description thereof is omitted.
< Infrared Heater >
As shown in fig. 8, the length and the entire length of one side of the external shape of the infrared heater 6B of the present modification are longer than those of the infrared heater 6A (see fig. 7) of the first modification. For example, the total length of the infrared heater 6B is about 2070 mm. The length of one side of the outer shape of the infrared heater 6B is about 210 mm.
The interval between the first cover portion 32 and the bent portions 31b, 31d, 31f is smaller than the interval S1 between the adjacent 2 straight portions 30a to 30 g. The distance between the first cover 32 and the bent portions 31b, 31d, 31f is, for example, about 15 mm.
The interval between the second cover portion 33 and the bent portions 31a, 31c, 31e is smaller than the interval S1 between the adjacent 2 straight portions 30a to 30 g. The space S3 between the cover main body 33a and the bent portions 31a, 31c, 31e in the second cover portion 33 is, for example, about 15 mm. The distance between the extension portion 33b and the straight portion 30a in the second cover portion 33 is about 30 mm.
As described above, according to the present modification, the following effects are obtained by making the intervals S2 and S3 between the cover portions 32 and 33 and the bent portions 31a to 31f smaller than the interval S1 between the adjacent 2 straight portions 30a to 30 g. Compared with the case where the intervals S2, S3 between the cover portions 32, 33 and the bent portions 31a to 31f are equal to or larger than the interval S1 between the adjacent 2 straight portions 30a to 30g, the exposure of the bent portions 31a to 31f can be more reliably avoided, and therefore, the occurrence of temperature drop of the bent portions 31a to 31f compared with other portions can be more reliably suppressed. That is, at least a part of the bent portions 31a to 31f can be heated more reliably from the outside by the cover portions 32 and 33, and therefore, the temperature difference between the bent portions 31a to 31f and other parts can be suppressed more reliably. Therefore, the temperature distribution of the infrared heater 6B can be more reliably balanced.
(second embodiment)
Next, a second embodiment of the present invention will be described with reference to fig. 9 to 12.
Fig. 9 is a plan view of an infrared heater 206 according to the second embodiment.
In the second embodiment, the shape of the infrared heater is particularly different from that of the first embodiment. In fig. 9, the same components as those of the first embodiment are given the same reference numerals, and detailed description thereof is omitted.
< Infrared Heater >
As shown in fig. 9, the external shape of the infrared heater 206 is rectangular in a plan view. The infrared heater 206 has a point-symmetrical shape (axisymmetrical shape) in a plan view.
The first cover 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover portion 32 has a straight tubular shape having a long side in the second direction V2.
The second cover 233 is connected to one end of the straight portion 30i on the other side in the second direction V2. The second cover 233 has a straight tubular shape having a long side in the second direction V2.
The first introduction portion 34 is disposed at a corner of the infrared heater 206. Specifically, the first introduction portion 34 is provided at one end of the first cover portion 32.
The second introduction portion 35 is disposed at a diagonal portion of the corner portion. Specifically, the second introduction portion 35 is provided at one end of the second cover portion 233. That is, the second introduction portion 35 is disposed on the opposite side of the first introduction portion 34 in the first direction V1 and the second direction V2.
Fig. 10 is a diagram for explaining an example of the operation of the substrate heating apparatus 201 according to the second embodiment. Fig. 11 is an explanatory diagram of the operation of the substrate heating apparatus 201 of the second embodiment, which is subsequent to fig. 10. Fig. 12 is an explanatory diagram of the operation of the substrate heating apparatus 201 of the second embodiment, which is subsequent to fig. 11.
For convenience, the decompression section 3, the gas supply section 4, the transport section 8, the temperature detection section 9, the recovery section 11, the swing section 12, and the control section 15 among the constituent elements of the substrate heating apparatus 201 are omitted from fig. 10 to 12.
In the second embodiment, the configuration of the position adjustment portion 207 is particularly different from that of the first embodiment. In fig. 10 to 12, the same components as those of the first embodiment are given the same reference numerals, and detailed description thereof is omitted.
< position adjusting portion >
As shown in fig. 10, the position adjustment unit 207 includes a housing unit 270, a moving unit 275, and a driving unit 279.
The housing 270 is disposed on the lower side of the chamber 2. The housing 270 can house the moving portion 275 and the driving portion 279. The housing 270 is formed in a rectangular parallelepiped box shape. Specifically, the housing 270 is formed of: a rectangular plate-shaped first support plate 271; a rectangular plate-shaped second support plate 272 opposed to the first support plate 271; a covering plate 273 is connected to the outer peripheral edges of the first support plate 271 and the second support plate 272, and covers the moving portion 275 and the driving portion 279 so as to surround the periphery of the moving portion 275 and the driving portion 279. In addition, the surrounding plate 273 may not be provided. That is, the position adjustment unit 207 may include at least the first support plate 271, the moving unit 275, and the driving unit 279. For example, an exterior cover may be provided to surround the entire device.
The outer peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2. The first support plate 271 also functions as a floor of the chamber 2. The heating portion 205 is disposed on the first support plate 271. Specifically, the heating portion 205 is supported by the first support plate 271 in the chamber 2.
The surrounding plate 273 is continuously connected up and down to the peripheral wall 23. The chamber 2 is configured to be capable of accommodating the substrate 10 in the closed space. For example, by joining the connection portions of the top plate 21, the first support plate 271 serving as the bottom plate, and the peripheral wall 23 with no gap by welding or the like, the air tightness in the chamber 2 can be improved.
The moving unit 275 includes a pin 276, a telescopic tube 277, and a base 278.
The pins 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a rod-like member extending up and down. The front end (upper end) of the pin 276 can abut against the second surface 10b of the substrate 10, and can be away from the second surface 10b of the substrate 10.
A plurality of pins 276 are provided at intervals in the direction (X-direction and Y-direction) parallel to the second surface 10b. The plurality of pins 276 are each formed to be substantially the same length. The tips of the plurality of pins 276 are arranged in a plane (XY plane) parallel to the second surface 10b.
A bellows 277 is provided between the first support plate 271 and the base 278. The telescopic tube 277 is a tubular member that covers around the pin 276 and extends up and down. The telescopic tube 277 is vertically extendable and retractable between the first support plate 271 and the base 278. The bellows 277 is, for example, a vacuum bellows.
The telescopic tube 277 is provided in a plurality as many as the plurality of pins 276. The front ends (upper ends) of the plurality of telescopic tubes 277 are fixed to the first support plate 271. Specifically, a plurality of insertion holes 271h that open the first support plate 271 in the thickness direction are formed in the first support plate 271. The inner diameter of each insertion hole 271h is substantially the same as the outer diameter of each extension tube 277. The distal ends of the telescopic tubes 277 are fitted and fixed to, for example, insertion holes 271h of the first support plate 271.
The base 278 is a plate-like member opposed to the first support plate 271. The upper surface of the base 278 is a flat surface along the second surface 10b of the substrate 10. A base end (lower end) of the plurality of pins 276 and a base end (lower end) of the plurality of telescopic tubes 277 are fixed to an upper surface of the base 278.
The front ends of the plurality of pins 276 may be inserted through the heating portion 205. In the heating portion 205, a plurality of insertion holes 205h for opening the heating portion 205 in the normal direction of the second surface 10b (the thickness direction of the electric heating plate) are formed at positions overlapping with the insertion holes 271h of the first support plate 271 (the inner spaces of the extension tubes 277) in the normal direction of the second surface 10 b.
The tips of the plurality of pins 276 can be brought into contact with the second surface 10b of the substrate 10 via the inner space of each telescopic tube 277 and each insertion hole 205h of the heating unit 205. Therefore, the substrate 10 can be supported parallel to the XY plane by the front ends of the plurality of pins 276. The pins 276 move in the Z direction in the chamber 2 while supporting the substrate 10 accommodated in the chamber 2 (see fig. 10 to 12).
The driving portion 279 is disposed in the housing portion 270, which is the outside of the chamber 2. Therefore, even if particles are generated by driving the driving unit 279, the intrusion of particles into the chamber 2 can be avoided by making the chamber 2 a closed space.
< method of heating substrate >
Next, a substrate heating method according to the present embodiment will be described. In the present embodiment, the substrate 10 is heated by the substrate heating apparatus 201 described above. The operations of the components of the substrate heating apparatus 201 are controlled by the control unit 15. In addition, the same steps as in the first embodiment will be omitted.
The substrate heating method of the present embodiment includes a depressurizing step, a first heating step, and a second heating step.
In the depressurizing step, the substrate 10 coated with the polyimide-forming liquid is depressurized.
As shown in fig. 10, in the depressurizing step, the substrate 10 is away from the heating portion 205. Specifically, the tips of the plurality of pins 276 are brought into contact with the second surface 10b of the substrate 10 via the inner space of each telescopic tube 277 and each insertion hole 205 of the heating unit 205, and the substrate 10 is lifted up, whereby the substrate 10 is moved away from the heating unit 205. In the depressurizing step, the heating portion 205 and the substrate 10 are separated to such an extent that the heat of the heating portion 205 is not transferred to the substrate 10. In the depressurizing step, the power supply of the heating portion 205 is turned on. The temperature of the heating portion 205 is, for example, about 250 ℃. On the other hand, in the depressurization step, the infrared heater 206 is powered off.
After the depressurizing step, in the first heating step, the substrate 10 is heated at the temperature of the heating portion 205.
As shown in fig. 11, in the first heating step, the tips of the plurality of pins 276 are separated from the second surface 10b of the substrate 10, so that the substrate 10 is brought into contact with the heating portion 205. That is, the substrate 10 is placed on the upper surface of the heating portion 205. Thus, since the heating portion 205 abuts against the second surface 10b of the substrate 10, heat of the heating portion 205 is directly transferred to the substrate 10. The temperature of the heating unit 205 is maintained at 250 ℃ in the first heating step, for example. Thus, the substrate temperature can rise to 250 ℃. On the other hand, in the first heating step, the power supply of the infrared heater 206 is always turned off.
After the first heating step, the substrate 10 is heated at a second temperature in a second heating step.
As shown in fig. 12, in the second heating step, the substrate 10 is brought close to the infrared heater 206 by raising the substrate 10 to a position higher than that in the first heating step. For example, in the second heating step, the temperature of the heating portion 205 is maintained at 250 ℃. In the second heating step, the power supply of the infrared heater 206 is turned on. For example, the infrared heater 206 can heat the substrate 10 at 450 ℃. Thus, the substrate temperature can rise to 450 ℃. In the second heating process, the substrate 10 is closer to the infrared heater 206 than in the first heating process, and therefore, the heat of the infrared heater 206 is sufficiently transferred to the substrate 10.
Thereafter, through the same steps as in the first embodiment, the polyimide film can be formed by volatilizing or imidizing the polyimide-forming liquid applied to the substrate 10 and rearranging the molecular chains at the time of imidizing the polyimide-forming liquid applied to the substrate 10.
As described above, according to the present embodiment, the external shape of the infrared heater 206 is rectangular in a plan view, the first introduction portion 34 is disposed at a corner of the infrared heater 206, and the second introduction portion 35 is disposed at a diagonal portion of the corner, whereby the positions of the first introduction portion 34 and the second introduction portion 35 are point-symmetrical with respect to the center of the infrared heater 206 in a plan view, and the first introduction portion 34 and the second introduction portion 35 are far apart. Accordingly, even when the first introduction portion 34 and the second introduction portion 35 are cooled as compared with the other portions, the temperature of the infrared heater 206 is not lowered, and excessive local cooling of the infrared heater 206 can be avoided, so that the temperature distribution of the infrared heater 206 can be balanced as much as possible.
Further, since the infrared heater 206 has a point-symmetrical shape in a plan view, the temperature distribution of the infrared heater 206 can be more reliably balanced than in the case where the infrared heater 206 has an asymmetrical shape in a plan view.
The moving portion 275 includes a plurality of pins 276 that can support the second surface 10b of the substrate 10 and can move in the normal direction of the second surface 10b, and the tips of the plurality of pins 276 are arranged in a plane parallel to the second surface 10b, thereby achieving the following effects. Since the substrate 10 can be heated in a state where the substrate 10 is stably supported, the polyimide forming liquid applied to the substrate 10 can be stably formed into a film.
In addition, in the heating portion 205, a plurality of insertion holes 205h that open the heating portion 205 in the normal direction of the second surface 10b are formed, and the tip ends of the pins 276 can be brought into contact with the second surface 10b via the insertion holes 205h, thereby achieving the following effects. Since the substrate 10 can be transferred between the plurality of pins 276 and the heating portion 205 in a short time, the heating temperature of the substrate 10 can be efficiently adjusted.
(third embodiment)
Next, a third embodiment of the present invention will be described with reference to fig. 13.
Fig. 13 is a plan view of an infrared heater 306 according to the third embodiment.
In the third embodiment, the shape of the infrared heater is particularly different from that of the first embodiment. In fig. 13, the same components as those of the first embodiment are given the same reference numerals, and detailed description thereof is omitted.
< Infrared Heater >
As shown in fig. 13, the external shape of the infrared heater 306 is rectangular in a plan view.
The first cover 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover portion 32 has a straight tubular shape having a long side in the second direction V2.
The second cover 333 is connected to one end of the straight portion 30i on the other side in the second direction V2. The second cover 333 has a U-shape. That is, the second cover 333 includes: a cover main body 333a having a long side in the second direction V2; a first extension 333b coupled to one end of the cover main body 333a and having a long side in the first direction V1; the second extension 333c is connected to one end of the first extension 333b, and has a long side in the second direction V2 so as to cover the first cover 32 from the outside. The space S3 between the cover main body 333a and the bent portions 31a, 31c, 31e, 31g in the second cover 333 and the space S4 between the second extension portion 333c and the first cover 32 in the second cover 333 are substantially the same size.
The first introduction portion 34 and the second introduction portion 35 are adjacently disposed at a corner of the infrared heater 306. In the first direction V1, the first introduction portion 34 is disposed further inside than the second introduction portion 35. That is, the first introduction portion 34 is disposed between the bent portion 31h and the second introduction portion 35.
As described above, according to the present embodiment, the external shape of the infrared heater 306 is rectangular in a plan view, and the first introduction portion 34 and the second introduction portion 35 are adjacently disposed at one corner of the infrared heater 306, so that the distance between the first introduction portion 34 and the second introduction portion 35 becomes minimum, and therefore thermal expansion or thermal contraction of the infrared heater 306 can be continued as much as possible.
(fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to fig. 14.
Fig. 14 is a top view of a heater unit 560 of the fourth embodiment.
In the fourth embodiment, the arrangement of the infrared heater is particularly different from that of the first embodiment. In fig. 14, the same components as those of the first embodiment are given the same reference numerals, and detailed description thereof is omitted.
< Heater Unit >
As shown in fig. 14, the substrate heating apparatus of the present embodiment includes a heater unit 560, and the heater unit 560 is configured by laying a plurality of (for example, 11 in the present embodiment) infrared heaters 6.
The heater unit 560 includes a first infrared heater group 561, a second infrared heater group 562, and a third infrared heater group 563.
The first infrared heater group 561 includes a plurality of (for example, 4 in the present embodiment) first infrared heaters 561a to 561d. The plurality of first infrared heaters 561a to 561d are laid out in the first direction V1 (one direction). The first infrared heaters 561a, 561b, 561c, 561d are arranged in this order from one side to the other side in the first direction V1.
The second infrared heater group 562 includes a plurality of (for example, 3 in the present embodiment) second infrared heaters 562a to 562c. The plurality of second infrared heaters 562a to 562c are laid in a direction parallel to the first direction V1. The second infrared heaters 562a, 562b, and 562c are arranged in this order from one side to the other side in the direction parallel to the first direction V1.
The third infrared heater group 563 includes a plurality of (for example, 4 in the present embodiment) third infrared heaters 563a to 563d. The plurality of third infrared heaters 563a to 563d are laid in a direction parallel to the first direction V1. The third infrared heaters 563a, 563b, 563c, and 563d are arranged in this order from one side to the other side in the direction parallel to the first direction V1.
The second infrared heaters 562a to 562c are disposed so as to be adjacent to the boundary portions of the adjacent 2 first infrared heaters 561a to 561d, and are laid out in the second direction V2 (the direction intersecting the direction) with the first infrared heaters 561a to 561 d. Further, the second infrared heaters 562a to 562c are disposed so as to be adjacent to the boundary portions of the adjacent 2 third infrared heaters 563a to 563d in the second direction V2, and are laid out in the second direction V2 with the third infrared heaters 563a to 563 d. That is, the second infrared heaters 562a to 562c are arranged to be sandwiched between the boundary portions of the adjacent 2 first infrared heaters 561a to 561d and the boundary portions of the adjacent 2 third infrared heaters 563a to 563d in the second direction V2.
In a plan view, the second infrared heaters 562a to 562c have the same shape as the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563 d. The first infrared heaters 561a to 561d, the second infrared heaters 562a to 562c, and the third infrared heaters 563a to 563d correspond to the infrared heater 6 of the first embodiment.
As described above, according to the present embodiment, the heater unit 560 is provided, and the heater unit 560 is configured such that a plurality of infrared heaters 6 are laid on one surface, thereby achieving the following effects. Since the infrared heater 6 is provided, the temperature distribution of the heater unit 560 can be balanced. In addition, in the case where the plurality of infrared heaters 6 can be individually controlled, since the output of some of the infrared heaters 6 can be made larger than the output of other infrared heaters 6, heating with good temperature distribution can be performed with respect to the substrate 10. For example, when the temperature of the four corners of the substrate 10 is low, the output of the infrared heater 6 disposed at the position corresponding to the portion is made larger than the output of the other infrared heaters 6, and thus the temperature of only the portion is increased, and the temperature distribution of the entire substrate 10 can be increased.
Further, the heater unit 560 includes: a plurality of first infrared heaters 561a to 561d laid along a first direction V1; the plurality of second infrared heaters 562a to 562c are disposed so as to be laid in a direction parallel to the first direction V1, and the second infrared heaters 562a to 562c are disposed so as to be laid in the second direction V2 intersecting the first direction V1 so as to be adjacent to the boundary portions of the adjacent 2 first infrared heaters 561a to 561d, thereby achieving the following effects. Since the temperature distribution of the first infrared heaters 561a to 561d and the temperature distribution of the second infrared heaters 562a to 562c can be complemented with each other, the balance of the temperature distribution of the heater unit 560 can be further improved.
Further, in the second direction V2, the second infrared heaters 562a to 562c and the third infrared heaters 563a to 563d are laid out so that the second infrared heaters 562a to 562c are adjacent to the boundary portions of the adjacent 2 third infrared heaters 563a to 563 d. Since the temperature distribution of the third infrared heaters 563a to 563d and the temperature distribution of the second infrared heaters 562a to 562c can be complemented with each other, the balance of the temperature distribution of the heater unit 560 can be further improved.
In addition, the second infrared heaters 562a to 562c have the same shape as the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d in a plan view, and thus the following effects are achieved. The balance of the temperature distribution of the heater unit 560 can be more reliably improved than in the case where the second infrared heaters 562a to 562c have different shapes from the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d in a plan view. Further, even if the substrate size is changed, the infrared heaters 6 can be arranged at equal intervals by changing the number of the infrared heaters 6, and the substrate 10 can be heated with good temperature distribution. However, in the case where the infrared heater is a simple straight pipe, if the substrate size is increased, the length of the straight pipe needs to be increased, and therefore, there is a possibility that thermal expansion of the infrared heater is difficult to be allowed. However, according to this configuration, even if the substrate size is increased, the size of the infrared heater 6 is not changed, and therefore thermal expansion of the infrared heater 6 can be easily allowed.
(fifth embodiment)
Next, a fifth embodiment of the present invention will be described with reference to fig. 15.
Fig. 15 is a plan view of a heater unit 660 of the fifth embodiment.
In the fifth embodiment, the arrangement of the infrared heater is particularly different from that of the fourth embodiment. In fig. 15, the same components as those of the fourth embodiment are given the same reference numerals, and detailed description thereof is omitted.
< Heater Unit >
As shown in fig. 15, the heater unit 660 of the present embodiment includes a first infrared heater group 561, a second infrared heater group 662, and a third infrared heater group 563.
The second infrared heaters 662a to 662c have a shape in which the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d are rotated by 90 degrees in a plan view. Specifically, in a plan view, the second infrared heaters 662a to 662c have a shape in which the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d are rotated 90 degrees rightward (clockwise) from the center thereof. The first infrared heaters 561a to 561d, the second infrared heaters 662a to 662c, and the third infrared heaters 563a to 563d correspond to the infrared heater 6 of the first embodiment.
As described above, according to the present embodiment, the second infrared heaters 662a to 662c have the shape in which the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d are rotated by 90 degrees in a plan view, and thus the temperature distribution due to the shape of the infrared heater 6 can be supplemented with each other by the first infrared heaters 561a to 561d, the second infrared heaters 662a to 662c, and the third infrared heaters 563a to 563d, so that the balance of the temperature distribution of the heater unit 660 can be further improved.
In addition, the shapes, combinations, and the like of the respective constituent members shown in the above examples are examples, and various modifications can be made based on design requirements and the like.
In the above embodiment, the substrate, the heating unit, and the infrared heater are housed in the common chamber, but the present invention is not limited to this. For example, the heating unit and the infrared heater may be housed in different chambers.
In the above embodiment, both the heating unit and the infrared heater can heat the substrate stepwise, but the present invention is not limited to this. For example, at least one of the heating unit and the infrared heater may be configured to heat the substrate stepwise. Further, both the heating unit and the infrared heater may heat the substrate only at a constant temperature.
Furthermore, the inner wall of the cavity may be made reflective to infrared rays in the above-described embodiments. For example, the inner wall of the cavity may be a mirror surface (reflecting surface) made of a metal such as aluminum. Thus, the temperature uniformity in the chamber can be improved as compared with the case where the inner wall of the chamber is made of a material capable of absorbing infrared rays.
In the above embodiment, a plurality of conveying rollers are used as the conveying portion, but the present invention is not limited to this. For example, a conveyor belt may be used as the conveying section, or a linear motor actuator may be used. For example, it may be possible to add a conveyor belt and a linear motor actuator in the X direction. Thereby, the conveyance distance of the substrate in the X direction can be adjusted.
In addition, when a configuration other than the configuration shown in fig. 3 (a configuration in which the passing portion is formed in the conveying portion) is adopted as the conveying portion, the size of the heating portion in a plan view may be equal to or larger than the size of the substrate in a plan view. This can further improve the in-plane uniformity of the heating temperature of the substrate, compared with the case where the size of the heating portion in the planar view is made smaller than the size of the substrate in the planar view.
In the above-described embodiment, the power supply of the heating unit is turned on and the power supply of the infrared heater is turned off in the depressurizing step and the first heating step, but the present invention is not limited to this. For example, the power supply of the heating unit and the infrared heater may be turned on in the depressurizing step and the first heating step.
In the above embodiment, the external shape of the infrared heater may be rectangular, and the first introduction portion and the second introduction portion may be disposed so as to face each other at a center portion of one side of the infrared heater. According to this configuration, the first introduction portion and the second introduction portion are separated to some extent, so that the infrared heater can be prevented from being locally cooled. Therefore, the temperature distribution of the infrared heater can be balanced.
The components described in the above embodiments or modifications thereof may be appropriately combined without departing from the spirit of the present invention, and some of the plurality of components obtained by the combination may be appropriately omitted.
Hereinafter, the present invention will be described more specifically by way of examples, but the present invention is not limited to the following examples.
The inventors confirmed by the following evaluation: by providing the infrared heater with the cover portion disposed so as to cover the bent portion from the outside, the temperature distribution of the infrared heater can be balanced.
Comparative example
The infrared heater of the comparative example used an infrared heater having only a straight portion and a curved portion. That is, the comparative example does not include a lid portion.
Example (example)
The infrared heater of the embodiment uses an infrared heater having a straight portion, a curved portion, and a cover portion. That is, the infrared heater of the example further includes a cover portion, as compared to the comparative example. The infrared heater of the example corresponds to the infrared heater 6 of the first embodiment (see fig. 2).
(evaluation conditions)
The following describes evaluation conditions of the temperature distribution of the substrate when heated by the infrared heater in the comparative example and the example.
A glass substrate was used as the substrate. The substrate is disposed directly below the infrared heater. The temperature of the substrate was 450 ℃.
In the substrate, a temperature of a portion corresponding to a longitudinal center portion of the straight portion (i.e., a portion overlapping in a normal direction of the substrate) (hereinafter referred to as "straight portion temperature") is measured. In addition, in the substrate, a temperature of a portion corresponding to the bent portion (i.e., a portion overlapping in the normal direction of the substrate) (hereinafter referred to as "bent portion temperature") is measured. Then, the difference between the straight portion temperature and the curved portion temperature is calculated.
(evaluation result of temperature distribution of substrate when heated by an infrared heater)
In the case of the comparative example, the curved portion is darker than the straight portion. From this, it can be seen that the bending temperature is lower than the straight temperature. In the case of the comparative example, the temperature difference was 5.8 ℃.
In the case of the embodiment, the curved portion is darker than the straight portion. However, the bent portion of the example is brighter than that of the comparative example. From this, it is clear that even in the example, the bending portion temperature is lower than the straight portion temperature, but the degree of decrease is smaller than that of the comparative example. In the case of the examples, the temperature difference was 2.4 ℃.
As described above, it is known that the temperature distribution of the infrared heater can be balanced by providing the infrared heater with the cover portion arranged to cover the bent portion from the outside. Further, it is known that the temperature distribution of the substrate can be improved.
Description of the reference numerals
1. 201 substrate heating device
2. Cavity(s)
3. Pressure reducing part
5. 205 heating part
5a mounting surface
6. 6A, 6B, 206, 306 infrared heater
7. 207 position adjusting part
7a, 275 moving part
8. Conveying part
8h passing part
9. Temperature detecting unit
10. Substrate board
10a first surface
10b second surface
11. Recovery unit
30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, 30i straight portions
31a, 31b, 31c, 31d, 31e, 31f, 31g, 31h bends
32. First cover (cover)
33. 233, 333 second cover part (cover part)
34. A first introduction part
35. A second introduction part
205h insertion hole
276. Pin
560. 660 heater unit
561a, 561b, 561c, 561d first infrared heater
562a, 562b, 562c, 662a, 662b, 662c second infrared heater
S1 spacing between adjacent 2 straight portions
S2, S3 intervals between the cover part and the bending part
V1 first direction
V2 second direction

Claims (12)

1. A substrate heating apparatus, comprising:
a depressurizing unit configured to depressurize an atmosphere of the accommodation space of the substrate coated with the solution;
an infrared heater capable of heating the substrate by infrared rays,
the infrared heater is in a tube shape bent at a plurality of positions, and includes: a bending part which is bent in a manner of protruding outwards; a cover part configured to cover at least a part of the bending part from the outside,
the bending parts are arranged on two sides of a first direction, and a plurality of bending parts are arranged in parallel in a second direction crossing the first direction,
a plurality of the bent portions are covered by the cover portions of the infrared heater itself from outside of both sides of the first direction,
The infrared heater further includes:
a plurality of straight portions having long sides in the first direction and arranged in parallel in the second direction;
a first introduction unit provided at one end of the infrared heater;
a second lead-in part arranged at the other end of the infrared heater,
the bent portion connects the ends of the adjacent 2 straight portions.
2. The substrate heating apparatus according to claim 1, wherein,
the cover portion extends linearly in the second direction so as to cover the plurality of curved portions from the outside.
3. The substrate heating apparatus according to claim 1 or 2, wherein,
at least one of the first introduction portion and the second introduction portion is provided at an end portion of the cover portion.
4. The substrate heating apparatus according to claim 1 or 2, further comprising a heater unit configured to lay a plurality of the infrared heaters on a surface.
5. The substrate heating apparatus of claim 4, wherein the heater unit comprises: a plurality of first infrared heaters laid in one direction; a plurality of second infrared heaters laid in a direction parallel to the one direction,
The second infrared heater is disposed so as to be adjacent to the boundary portions of the adjacent 2 first infrared heaters and to be laid on the first infrared heater in a direction intersecting the direction.
6. The substrate heating apparatus according to claim 5, wherein the second infrared heater has the same shape as the first infrared heater in a plan view.
7. The substrate heating apparatus according to claim 1 or 2, further comprising a heating portion which is arranged on a side opposite to the infrared heater across the substrate and is capable of heating the substrate.
8. The substrate heating apparatus of claim 7, further comprising a cavity capable of accommodating the substrate, the heating portion, and the infrared heater.
9. The substrate heating apparatus according to claim 1 or 2, further comprising a temperature detecting portion capable of detecting a temperature of the substrate.
10. A substrate heating method is characterized by comprising the following steps:
a depressurizing step of depressurizing the atmosphere of the accommodation space of the substrate coated with the solution;
a heating step of heating the substrate by infrared rays,
In the heating step, the substrate is heated by infrared rays using an infrared heater,
the infrared heater is in a tube shape bent at a plurality of positions, and includes: a bending part which is bent in a manner of protruding outwards; a cover part configured to cover at least a part of the bending part from the outside,
the bending parts are arranged on two sides of a first direction, and a plurality of bending parts are arranged in parallel in a second direction crossing the first direction,
a plurality of the bent portions are covered by the cover portions of the infrared heater itself from outside of both sides of the first direction,
the infrared heater further includes:
a plurality of straight portions having long sides in the first direction and arranged in parallel in the second direction;
a first introduction unit provided at one end of the infrared heater;
a second lead-in part arranged at the other end of the infrared heater,
the bent portion connects the ends of the adjacent 2 straight portions.
11. An infrared heater capable of heating a substrate by infrared rays, characterized in that the infrared heater has a tubular shape bent at a plurality of positions, and comprises: a bending part which is bent in a manner of protruding outwards; a cover part configured to cover at least a part of the bending part from the outside,
The bending parts are arranged on two sides of a first direction, and a plurality of bending parts are arranged in parallel in a second direction crossing the first direction,
a plurality of the bent portions are covered by the cover portions of the infrared heater itself from outside of both sides of the first direction,
the infrared heater further includes:
a plurality of straight portions having long sides in the first direction and arranged in parallel in the second direction;
a first introduction unit provided at one end of the infrared heater;
a second lead-in part arranged at the other end of the infrared heater,
the bent portion connects the ends of the adjacent 2 straight portions.
12. A substrate heating apparatus, comprising:
a depressurizing unit configured to depressurize an atmosphere of the accommodation space of the substrate coated with the solution;
an infrared heater capable of heating the substrate by infrared rays,
the infrared heater is in a tube shape bent at a plurality of positions, and includes: a bending part which is bent in a manner of protruding outwards; a cover portion configured to cover at least a part of the curved portion from outside; a plurality of straight portions having long sides in a first direction and arranged in parallel in a second direction; a first introduction unit provided at one end of the infrared heater; a second lead-in part arranged at the other end of the infrared heater,
The bent portion connects the ends of the adjacent 2 straight portions,
the cover portion extends linearly in the second direction so as to cover the plurality of curved portions from the outside,
the interval between the cover portion and the bent portion is smaller than the interval between the adjacent 2 straight portions.
CN201710573155.8A 2016-08-30 2017-07-14 Substrate heating device, substrate heating method, and infrared heater Active CN107785240B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011852A (en) * 2003-06-16 2005-01-13 Tokyo Electron Ltd Device and method for heat treatment
JP2005019479A (en) * 2003-06-23 2005-01-20 Tokyo Electron Ltd Heating means, placing base, and heat treatment equipment
CN102810498A (en) * 2011-06-02 2012-12-05 东京应化工业株式会社 Heating apparatus, coating apparatus and heating method
CN104779181A (en) * 2014-01-15 2015-07-15 株式会社东芝 Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
JP2015141965A (en) * 2014-01-28 2015-08-03 東京応化工業株式会社 Recovery device, and substrate processing device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060663B2 (en) * 1991-11-15 2000-07-10 井関農機株式会社 Tractor transmission case connection structure
JP3060633U (en) * 1998-12-28 1999-09-07 アイリスオーヤマ株式会社 Assembled chest
JP3060663U (en) * 1998-12-29 1999-09-07 クリーン・テクノロジー株式会社 Heating equipment
KR100457189B1 (en) * 1999-12-27 2004-11-16 마쯔시다덴기산교 가부시키가이샤 Liquid crystal display and driving method thereof
JP2001210632A (en) 2000-01-28 2001-08-03 Sharp Corp Formation method of polyimide film
JP3798674B2 (en) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 Heat treatment apparatus and heat treatment method
JP2006170524A (en) 2004-12-15 2006-06-29 Tdk Corp Kiln
US8573836B2 (en) * 2006-10-26 2013-11-05 Tokyo Electron Limited Apparatus and method for evaluating a substrate mounting device
CN102089858B (en) 2008-02-20 2013-03-13 夏普株式会社 Method for manufacturing flexible semiconductor substrate
CN101962759B (en) * 2009-07-21 2012-07-25 深圳市宇光高科新能源技术有限公司 PECVD system with internal heater
JP5428811B2 (en) * 2009-12-04 2014-02-26 凸版印刷株式会社 Substrate drying method, substrate drying apparatus, substrate manufacturing method, and flat panel display
JP5622701B2 (en) * 2011-10-13 2014-11-12 東京エレクトロン株式会社 Vacuum dryer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011852A (en) * 2003-06-16 2005-01-13 Tokyo Electron Ltd Device and method for heat treatment
JP2005019479A (en) * 2003-06-23 2005-01-20 Tokyo Electron Ltd Heating means, placing base, and heat treatment equipment
CN102810498A (en) * 2011-06-02 2012-12-05 东京应化工业株式会社 Heating apparatus, coating apparatus and heating method
CN104779181A (en) * 2014-01-15 2015-07-15 株式会社东芝 Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
JP2015141965A (en) * 2014-01-28 2015-08-03 東京応化工業株式会社 Recovery device, and substrate processing device

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