JP2015141965A - Recovery device, and substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a recovery device and a substrate processing device, capable of protecting a suction part by inhibiting a large load from being applied to the suction part.SOLUTION: There is disclosed a recovery device which includes a housing chamber where a substrate having a coating film of a liquid material is housed, is connected to a housing chamber of a pressure adjustment unit where a pressure around the substrate is adjusted, and recovers a part of the liquid material vaporized in the pressure adjustment unit. The recovery device includes: a suction part which sucks gas in the housing chamber; an exhaust pressure adjustment part which reduces an exhaust pressure of suction pressure by the suction part; a circulation part which passes gas in the housing chamber sucked by the suction part therethrough; a temperature adjustment part which adjusts a temperature of gas circulating through the circulation part so that the vaporized liquid material contained in gas is liquefied; and a reservoir part where the liquid material liquefied by the temperature adjustment part is accumulated.

Description

  The present invention relates to a recovery apparatus and a substrate processing apparatus.

  2. Description of the Related Art Conventionally, a part of a liquid material that has a storage chamber for storing a substrate on which a liquid coating film is formed, is connected to a storage chamber of a pressure adjustment device that adjusts the pressure around the substrate, and is vaporized in the pressure adjustment device A recovery device for recovering the gas is known. For example, Patent Document 1 discloses a configuration in which a substrate coated with a coating liquid is accommodated in a sealed container of a reduced pressure drying apparatus and a trap device is provided between the reduced pressure drying apparatus and a vacuum pump as a collection device. ing.

JP 2005-85814 A

  By the way, when the inside of the sealed container of the reduced pressure drying apparatus is decompressed at a stretch with a strong pressure, the pressure on the exhaust side of the vacuum pump (hereinafter sometimes referred to as exhaust pressure) increases at a stretch. For this reason, there is a problem that a large load is applied to the vacuum pump due to the sudden exhaust pressure generated suddenly.

  In view of the circumstances as described above, it is an object of the present invention to provide a recovery apparatus and a substrate processing apparatus that can suppress a large load on a suction part and protect the suction part.

  A recovery device according to an aspect of the present invention includes a storage chamber that stores a substrate on which a coating film of a liquid material is formed, and is connected to the storage chamber of a pressure adjustment device that adjusts the pressure around the substrate. A recovery device that recovers a part of the liquid material vaporized in the pressure adjusting device, the suction unit for sucking the gas in the storage chamber, and the exhaust pressure adjusting unit for reducing the exhaust pressure of the suction pressure by the suction unit; The temperature of the gas flowing through the flow part is adjusted so that the flow part through which the gas sucked by the suction part passes and the vaporized liquid material contained in the gas are liquefied. A temperature adjusting unit; and a storage unit storing the liquid material liquefied by the temperature adjusting unit.

  According to this configuration, the exhaust pressure adjusting unit reduces the exhaust pressure of the suction pressure by the suction unit, so that even if the suction unit decompresses the storage chamber of the pressure adjusting device at a stretch with a strong pressure, the strong exhaust pressure suddenly increases. Generation | occurrence | production can be suppressed. Therefore, it can suppress that a big load is applied to a suction part, and can protect a suction part.

In the recovery apparatus, the exhaust pressure adjusting unit may include an adjustment valve that is opened when the exhaust pressure exceeds a predetermined pressure.
According to this configuration, when the exhaust pressure exceeds a predetermined pressure, the adjustment valve is opened, so that it is possible to reliably suppress a large load from being applied to the suction portion. For example, it is possible to prevent a large load from being applied to the suction portion by setting the predetermined pressure to a pressure lower than the exhaust pressure that applies a large load to the suction portion. Therefore, the suction part can be sufficiently protected.

In the above recovery apparatus, the exhaust pressure adjusting unit includes an exhaust pressure detecting unit that detects information related to the exhaust pressure, and an open / close control unit that controls opening and closing of the adjustment valve based on a detection result by the exhaust pressure detecting unit. You may have.
According to this configuration, since the opening / closing control unit can adjust the opening / closing of the regulating valve using the detection result of the exhaust pressure detecting unit, a recovery device having an excellent ability to adjust the degree of reduction of the exhaust pressure can be obtained. .

In the above recovery apparatus, the information may include at least one of a magnitude of the exhaust pressure and a timing at which the suction pressure is generated.
According to this configuration, since the exhaust pressure of the suction pressure by the suction portion can be reduced by detecting information including at least one of the magnitude of the exhaust pressure and the timing at which the suction pressure is generated, a large load is applied to the suction portion. Can be reliably suppressed. Therefore, the suction part can be sufficiently protected.

Said collection | recovery apparatus may further be equipped with the connection part which connects between the said suction part and the said circulation part so that the said gas may distribute | circulate, and the said exhaust pressure adjustment part may be provided with two or more by the said connection part. .
According to this configuration, the plurality of exhaust pressure adjusting units can reduce the suction pressure exhaust pressure by the suction unit at a plurality of locations. Therefore, it can suppress reliably that a big load is applied to a suction part. Therefore, the suction part can be sufficiently protected.

In the above-described recovery device, the flow part may be formed in a straight tube shape.
According to this configuration, since the gas in the storage chamber sucked by the suction part flows smoothly through the circulation part, a part of the liquid material vaporized by the pressure adjusting device can be efficiently recovered.

In the above-described recovery device, the temperature adjustment unit includes a refrigerant flow pipe that is arranged along the flow part and through which the refrigerant can flow, and a refrigerant drive unit that causes the refrigerant to flow through the refrigerant flow pipe. Also good.
According to this configuration, since the gas in the storage chamber sucked by the suction part is cooled and liquefied by the circulation part, a part of the liquid material vaporized by the pressure adjusting device can be efficiently recovered.

In the above-described recovery device, the refrigerant driving unit may be formed so that the refrigerant flows in a direction opposite to a flow direction of the gas flowing through the flow unit.
According to this configuration, since the gas flowing through the flow part can be efficiently cooled, the gas in the storage chamber sucked by the suction part is easily liquefied. Therefore, a part of the liquid material vaporized by the pressure adjusting device can be efficiently recovered.

Said collection | recovery apparatus WHEREIN: The said storage part may have the storage amount detection part which detects the quantity of the stored said liquid.
According to this configuration, the amount of the liquid material stored in the storage unit can be accurately detected.

Said collection | recovery apparatus WHEREIN: The said storage part may have a discharge | emission control part which discharges | emits the said liquid body according to the detection result of the said storage amount detection part.
According to this configuration, the amount of the liquid material stored in the storage unit can be maintained at a predetermined amount. Therefore, it can suppress that a liquid body overflows from a storage part.

The recovery apparatus may further include a liquid material circulation unit that returns the liquid material stored in the storage unit to a supply source of the liquid material provided in a coating apparatus that applies the liquid material to the substrate. Good.
According to this configuration, since the liquid material recovered by the liquid material circulation unit is returned to the supply source of the coating apparatus, the recovered liquid material can be reused as the coating liquid.

According to another aspect of the present invention, there is provided a substrate processing apparatus having a storage chamber for storing a substrate on which a liquid coating film is formed, a pressure adjusting device for adjusting a pressure around the substrate, and the pressure adjusting device A substrate processing apparatus connected to the storage chamber and configured to recover a part of the liquid material vaporized in the pressure adjusting apparatus, wherein the recovery apparatus is the above-described recovery apparatus.
According to this configuration, since the recovery device is provided, it is possible to provide a substrate processing apparatus that can suppress a large load on the suction unit and protect the suction unit.

  ADVANTAGE OF THE INVENTION According to this invention, it can suppress that a big load is applied to a suction part, and can provide the collection | recovery apparatus and substrate processing apparatus which can protect a suction part.

It is a top view which shows the whole structure of the coating device which concerns on 1st embodiment of this invention. It is a side view which shows the whole structure of the coating device which concerns on this embodiment. It is a figure which shows the structure of the nozzle which concerns on this embodiment. It is a figure which shows a structure when the nozzle which concerns on this embodiment is seen from the -Z side. It is a figure which shows the cross-sectional shape of the nozzle which concerns on this embodiment, and a nozzle front-end | tip management part. It is a figure which shows the structure of the pressure reduction drying part and collection | recovery apparatus which concern on this embodiment. It is sectional drawing which shows the structure of the heating chamber which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the structure of the container which concerns on this embodiment. It is a cross-sectional exploded view of the top end part of the container which concerns on this embodiment. It is a section exploded assembly figure of a container concerning this embodiment. It is a figure which shows the structure of the collection | recovery apparatus which concerns on 2nd embodiment of this invention. It is a figure which shows the structure of the collection | recovery apparatus which concerns on 3rd embodiment of this invention. It is a figure which shows the process of the baking process of the coating device which concerns on a modification. It is a top view which shows the whole structure of the coating device which concerns on a modification. It is a schematic diagram which shows the whole structure of the coating device which concerns on a modification.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view showing the overall configuration of a coating apparatus (substrate processing apparatus) CTR according to this embodiment. FIG. 2 is a side view showing the overall configuration of the coating apparatus CTR according to the present embodiment.
As shown in FIGS. 1 and 2, the coating apparatus CTR is an apparatus that applies a liquid material to the substrate S. The coating apparatus CTR includes a substrate supply / recovery unit LU, a first chamber CB1, a second chamber CB2, a connection unit CN, and a control unit CONT. The first chamber CB1 has a coating part CT. The second chamber CB2 has a firing part BK. The connection part CN has a reduced pressure drying part (pressure adjusting device) VD.

  The coating device CTR is used by being placed on a floor surface FL such as a factory. The coating apparatus CTR may be configured to be accommodated in one room, or may be configured to be accommodated in a plurality of rooms. In the coating apparatus CTR, the substrate supply / recovery unit LU, the coating unit CT, the vacuum drying unit VD, and the baking unit BK are arranged in one direction in this order.

  Regarding the apparatus configuration, the coating apparatus CTR is not limited to the substrate supply / recovery unit LU, the coating unit CT, the vacuum drying unit VD, and the baking unit BK arranged in this order in this order. For example, the substrate supply / recovery unit LU may be divided into a substrate supply unit (not shown) and a substrate recovery unit (not shown). Of course, the substrate supply / recovery unit LU, the coating unit CT, the reduced pressure drying unit VD, and the baking unit BK may not be arranged in one direction. The structure arrange | positioned may be sufficient.

  In each of the following drawings, in describing the configuration of the coating apparatus according to the present embodiment, for simplicity of description, directions in the drawing will be described using an XYZ coordinate system. In the XYZ coordinate system, a plane parallel to the floor is defined as an XY plane. In this XY plane, the direction in which each component (substrate supply / recovery unit LU, coating unit CT, reduced pressure drying unit VD, and baking unit BK) of the coating apparatus CTR is arranged is denoted as the X direction, and in the X direction on the XY plane. The orthogonal direction is denoted as Y direction. The direction perpendicular to the XY plane is denoted as the Z direction. In each of the X direction, the Y direction, and the Z direction, the direction of the arrow in the figure is the + direction, and the direction opposite to the arrow direction is the − direction.

  In the present embodiment, as the substrate S, a plate-like member made of, for example, glass or resin is used. In the present embodiment, molybdenum is further formed on the substrate S by sputtering as a back electrode. Of course, other conductive materials may be used as the back electrode. As the substrate S, a substrate having dimensions of 330 mm × 330 mm as viewed in the Z direction will be described as an example. In addition, about the dimension of the board | substrate S, it is not restricted to the above 330 mm * 330 mm board | substrates. For example, as the substrate S, a substrate having a size of 125 mm × 125 mm may be used, or a substrate having a size of 1 m × 1 m may be used. Of course, a substrate having a size larger or smaller than the above size can be used as appropriate.

  In this embodiment, as a liquid applied to the substrate S, for example, a predetermined solvent may be copper (Cu), indium (In), gallium (Ga), selenium (Se) or copper (Cu), zinc (Zn), A liquid composition containing a metal such as tin (Sn) or selenium (Se) is used. This liquid composition contains the metal material which comprises the light absorption layer (photoelectric converting layer) of a CIGS or a CZTS type solar cell.

  In the present embodiment, the liquid composition contains a substance for ensuring the grain size of the light absorption layer of the CIGS or CZTS solar cell. Of course, as the liquid material, a liquid material in which other metals, for example, metal nanoparticles are dispersed may be used.

(Substrate supply and recovery unit)
The substrate supply / recovery unit LU supplies the unprocessed substrate S to the coating unit CT and collects the processed substrate S from the coating unit CT. The substrate supply / recovery unit LU has a chamber 10. The chamber 10 is formed in a rectangular parallelepiped box shape. Inside the chamber 10, a storage chamber 10a capable of storing the substrate S is formed. The chamber 10 has a first opening 11, a second opening 12 and a lid 14. The first opening 11 and the second opening 12 communicate the storage chamber 10 a with the outside of the chamber 10.

  The first opening 11 is formed on the + Z side surface of the chamber 10. The first opening 11 is formed larger than the dimension of the substrate S as viewed in the Z direction. The substrate S taken out of the chamber 10 and the substrate S accommodated in the accommodation chamber 10 a are taken in and out of the substrate supply / recovery unit LU through the first opening 11.

  The second opening 12 is formed on the surface of the chamber 10 on the + X side. The second opening 12 is formed larger than the dimension of the substrate S when viewed in the X direction. The substrate S supplied to the coating unit CT and the substrate S returned from the coating unit CT are taken in and out of the substrate supply / recovery unit LU through the second opening 12.

  The lid 14 opens or closes the first opening 11. The lid portion 14 is formed in a rectangular plate shape. The lid portion 14 is attached to the + X side of the first opening portion 11 via a hinge portion (not shown). For this reason, the lid portion 14 rotates around the Y axis around the + X side of the first opening 11. The first opening 11 can be opened and closed by rotating the lid 14 around the Y axis.

  A substrate transport unit 15 is provided in the storage chamber 10a. The substrate transport unit 15 has a plurality of rollers 17. A pair of rollers 17 is arranged in the Y direction, and a plurality of the pair of rollers 17 are arranged in the X direction.

  Each roller 17 is provided to be rotatable around the Y axis with the Y axis direction as the central axis direction. The plurality of rollers 17 are formed to have the same diameter, and the + Z side ends of the plurality of rollers 17 are disposed on the same plane parallel to the XY plane. Therefore, the plurality of rollers 17 can support the substrate S so that the substrate S is in a posture parallel to the XY plane.

  The rotation of each roller 17 is controlled by a roller rotation control unit (not shown), for example. The substrate transport unit 15 rotates the rollers 17 around the Y axis clockwise or counterclockwise with the plurality of rollers 17 supporting the substrate S, thereby causing the substrate S to move in the X direction (+ X direction or −X direction). ). As the substrate transport unit 15, a floating transport unit (not shown) that lifts and transports a substrate may be used.

(First chamber)
The first chamber CB1 is disposed on a base BC placed on the floor surface FL. The first chamber CB1 is formed in a rectangular parallelepiped box shape. A processing chamber 20a is formed in the first chamber CB1. The application part CT is provided in the processing chamber 20a. The coating unit CT performs a liquid material coating process on the substrate S.

  The first chamber CB1 has a first opening 21 and a second opening 22. The first opening 21 and the second opening 22 communicate the processing chamber 20a with the outside of the first chamber CB1. The first opening 21 is formed on the −X side surface of the first chamber CB1. The second opening 22 is formed on the surface on the + X side of the first chamber CB1. The first opening 21 and the second opening 22 are formed to dimensions that allow the substrate S to pass through. The substrate S is taken in and out of the first chamber CB1 through the first opening 21 and the second opening 22.

  The coating unit CT includes a discharge unit 31, a maintenance unit 32, a liquid material supply unit (liquid material supply source) 33, a cleaning liquid supply unit 34, a waste liquid storage unit 35, a gas supply / discharge unit 37, and a substrate transport unit 25.

The discharge unit 31 includes a nozzle NZ, a processing stage 28, and a nozzle drive unit NA.
FIG. 3 is a diagram illustrating a configuration of the nozzle NZ.
As shown in FIG. 3, the nozzle NZ is formed in a long shape, and is arranged so that the longitudinal direction is parallel to the X direction. The nozzle NZ has a main body NZa and a protrusion NZb. The main body NZa is a housing that can accommodate a liquid material therein. The main body NZa is formed using a material containing, for example, titanium or a titanium alloy. The protruding portion NZb is formed to protrude to the + X side and the −X side with respect to the main body portion NZa. The protruding part NZb is held in a part of the nozzle driving part NA.

FIG. 4 is a diagram illustrating a configuration when the nozzle NZ is viewed from the −Z side.
As shown in FIG. 4, the nozzle NZ has a discharge port OP at the end (tip TP) on the −Z side of the main body NZa. The discharge port OP is an opening through which the liquid material is discharged. The discharge port OP is formed in a slit shape so as to be long in the X direction. For example, the discharge port OP is formed so that the longitudinal direction thereof is substantially the same as the dimension of the substrate S in the X direction.

  The nozzle NZ discharges a liquid material in which, for example, the above four metals of Cu, In, Ga, and Se are mixed at a predetermined composition ratio. The nozzles NZ are each connected to the liquid material supply unit 33 via connection piping (not shown). The nozzle NZ has a holding part for holding the liquid material therein. In addition, the temperature control part which adjusts the temperature of the liquid body hold | maintained at the said holding | maintenance part may be arrange | positioned.

  Returning to FIG. 1 and FIG. 2, the processing stage 28 places the substrate S to be coated. The surface on the + Z side of the processing stage 28 is a substrate placement surface on which the substrate S is placed. The substrate mounting surface is formed in parallel to the XY plane. The processing stage 28 is formed using, for example, stainless steel.

  The nozzle driving unit NA moves the nozzle NZ in the X direction. The nozzle driving unit NA has a stator 40 and a mover 41 that constitute a linear motor mechanism. The nozzle drive unit NA may have a configuration in which another drive mechanism such as a ball screw mechanism is used. The stator 40 extends in the Y direction. The stator 40 is supported by the support frame 38. The support frame 38 has a first frame 38a and a second frame 38b. The first frame 38a is disposed at the −Y side end of the processing chamber 20a. The second frame 38b is disposed at a position where the processing stage 28 is sandwiched between the second frame 38b and the first frame 38a in the processing chamber 20a.

  The mover 41 is movable along the extending direction (Y direction) of the stator 40. The mover 41 includes a nozzle support member 42 and an elevating part 43. The nozzle support member 42 is formed in a gate shape and includes a holding portion 42a that holds the protruding portion NZb of the nozzle NZ. The nozzle support member 42 integrally moves in the Y direction between the first frame 38 a and the second frame 38 b along the stator 40 together with the elevating part 43. For this reason, the nozzle NZ held by the nozzle support member 42 moves across the processing stage 28 in the Y direction. The nozzle support member 42 moves in the Z direction along the lifting guide 43 a of the lifting unit 43. The mover 41 has a drive source (not shown) that moves the nozzle support member 42 in the Y direction and the Z direction.

The maintenance unit 32 is a part that performs maintenance of the nozzle NZ. The maintenance unit 32 includes a nozzle standby unit 44 and a nozzle tip management unit 45.
The nozzle standby unit 44 is configured to dip the tip TP so that the tip TP of the nozzle NZ is not dried, and the nozzle NZ when the nozzle NZ is replaced or the liquid material supplied to the nozzle NZ is replaced. And a discharge unit (not shown) for discharging the liquid material held therein.

  The nozzle tip management unit 45 is a part that adjusts the condition of the nozzle tip by washing the tip TP of the nozzle NZ and its vicinity, or by preliminarily ejecting from the ejection port OP of the nozzle NZ. The nozzle tip management unit 45 includes a wiping unit 45a for wiping the tip TP of the nozzle NZ, and a guide rail 45b for guiding the wiping unit 45a. The nozzle tip management section 45 is provided with a waste liquid storage section 35a that stores a liquid material discharged from the nozzle NZ, a cleaning liquid used for cleaning the nozzle NZ, and the like.

  FIG. 5 is a diagram illustrating a cross-sectional shape of the nozzle NZ and the nozzle tip management unit 45. As shown in FIG. 5, the wiping portion 45 a is formed in a shape that covers a tip TP of the nozzle NZ and a part of the inclined surface on the tip TP side in a cross-sectional view.

  As shown in FIGS. 1 and 5, the guide rail 45b extends in the X direction so as to cover the discharge port OP of the nozzle NZ. The wiping portion 45a is provided to be movable in the X direction along the guide rail 45b by a driving source (not shown) or the like. The tip TP is wiped by moving in the X direction while the wiping portion 45a is in contact with the tip TP of the nozzle NZ.

  The liquid material supply unit 33 includes a first liquid material container 33a and a second liquid material container 33b. A liquid material to be applied to the substrate S is stored in the first liquid material storage portion 33a and the second liquid material storage portion 33b. The first liquid material accommodation part 33a and the second liquid material accommodation part 33b can accommodate different types of liquid materials.

  The cleaning liquid supply unit 34 stores cleaning liquid for cleaning each part of the coating unit CT, specifically, the inside of the nozzle NZ, the nozzle tip management unit 45, and the like. The cleaning liquid supply unit 34 is connected to the inside of the nozzle NZ, the nozzle tip management unit 45, and the like via a pipe and a pump (not shown).

  The waste liquid storage unit 35 collects a portion of the liquid discharged from the nozzle NZ that is not reused. The nozzle tip management unit 45 may have a configuration in which a portion that performs preliminary discharge and a portion that cleans the tip TP of the nozzle NZ are provided separately. Further, the nozzle standby unit 44 may be configured to perform preliminary discharge.

  The gas supply / discharge part 37 has a gas supply part 37a and an exhaust part 37b. The gas supply unit 37a supplies an inert gas such as nitrogen gas or argon gas to the processing chamber 20a. The exhaust unit 37b sucks the processing chamber 20a and discharges the gas in the processing chamber 20a to the outside of the first chamber CB1.

  The substrate transport unit 25 transports the substrate S in the processing chamber 20a. The substrate transport unit 25 has a plurality of rollers 27. The rollers 27 are arranged in two rows so as to cross the central portion in the Y direction of the processing chamber 20a in the X direction. The rollers 27 arranged in each row support the + Y side end side and the −Y side end side of the substrate S, respectively.

  By rotating each roller 27 clockwise or counterclockwise around the Y axis while supporting the substrate S, the substrate S supported by each roller 27 is conveyed in the X direction (+ X direction or −X direction). The In addition, you may use the floating conveyance part not shown which floats and conveys a board | substrate.

(Connection part)
As shown in FIGS. 1 and 2, the connection portion CN connects the first chamber CB1 and the second chamber CB2. The substrate S moves between the first chamber CB1 and the second chamber CB2 via the connection portion CN. The connection part CN has a third chamber CB3. The third chamber CB3 is formed in a rectangular parallelepiped box shape. A processing chamber 50 (accommodating chamber) a is formed inside the third chamber CB3. In the present embodiment, the processing chamber 50a is provided with a reduced pressure drying unit VD. The vacuum drying unit VD dries the liquid applied on the substrate S. Gate valves V2 and V3 are provided in the third chamber CB3.

  The third chamber CB3 has a first opening 51 and a second opening 52. The first opening 51 and the second opening 52 communicate the processing chamber 50a and the outside of the third chamber CB3. The first opening 51 is formed on the surface on the −X side of the third chamber CB3. The second opening 52 is formed on the surface on the + X side of the third chamber CB3. The 1st opening part 51 and the 2nd opening part 52 are formed in the dimension which the board | substrate S can pass. The substrate S is taken in and out of the third chamber CB3 through the first opening 51 and the second opening 52.

(Vacuum drying part)
FIG. 6 is a diagram illustrating the configuration of the reduced-pressure drying unit VD and the recovery device 90.
As illustrated in FIG. 6, the vacuum drying unit VD includes a substrate transport unit 55, a gas supply unit 58, and a heating unit 53.
The substrate transport unit 55 has a plurality of rollers 57. A pair of rollers 57 are arranged in the Y direction, and a plurality of the pair of rollers 57 are arranged in the X direction. The plurality of rollers 57 support the substrate S disposed in the processing chamber 50 a through the first opening 51.

  By rotating each roller 57 clockwise or counterclockwise around the Y axis while supporting the substrate S, the substrate S supported by each roller 57 is conveyed in the X direction (+ X direction or −X direction). The In addition, you may use the floating conveyance part not shown which floats and conveys a board | substrate.

  The gas supply unit 58 supplies an inert gas such as nitrogen gas or argon gas to the processing chamber 50a. The gas supply unit 58 includes a first supply unit 58a and a second supply unit 58b. The first supply unit 58a and the second supply unit 58b are connected to a gas supply source 58c such as a gas cylinder or a gas pipe. The supply of gas to the processing chamber 50a is mainly performed using the first supply unit 58a. The second supply unit 58b finely adjusts the gas supply amount by the first supply unit 58a.

  The heating unit 53 heats the liquid material on the substrate S disposed in the processing chamber 50a. As the heating unit 53, for example, an infrared device or a hot plate is used. The temperature of the heating unit 53 can be adjusted to, for example, room temperature to about 100 ° C. By using the heating unit 53, evaporation of the solvent contained in the liquid material on the substrate S is promoted, and drying processing under reduced pressure is supported.

  The heating unit 53 is connected to an elevating mechanism (moving unit) 53a. The lifting mechanism 53a moves the heating unit 53 in the Z direction. As the elevating mechanism 53a, for example, a motor mechanism or an air cylinder mechanism is used. The distance between the heating unit 53 and the substrate S can be adjusted by moving the heating unit 53 in the Z direction by the elevating mechanism 53a. The amount of movement of the heating unit 53 and the timing of movement of the heating unit 53 by the elevating mechanism 53a are controlled by the control unit CONT.

(Recovery device)
The collection device 90 is connected to the processing chamber 50a of the vacuum drying unit VD. The recovery device 90 recovers a part of the liquid material vaporized in the vacuum drying unit VD. The recovery device 90 includes a suction part 91, a connection part 96, a discharge pressure adjustment part 92, a flow part 93, a temperature adjustment part 94, a connection part 97a, a filter 98, a connection part 97b, a silencer 99, a connection part 97c, and a storage part 95. Have. The arrangement of the components of the recovery device 90 will be described. From the vacuum drying unit VD side (+ Z direction side) to the −Z direction side, the suction unit 91, the connection unit 96, the exhaust pressure adjustment unit 92, the circulation unit 93, and the temperature adjustment. The part 94, the connection part 97a, the filter 98, the connection part 97b, the silencer 99, the connection part 97c, and the storage part 95 are arranged in this order.

  The suction unit 91 sucks the gas in the processing chamber 50a and depressurizes the processing chamber 50a. By reducing the pressure in the processing chamber 50a, evaporation of the solvent contained in the liquid material of the substrate S is promoted, and the liquid material is dried. The suction part 91 has a first suction part 91a and a second suction part 91b. The first suction part 91a and the second suction part 91b are connected to suction sources 91c and 91d such as a pump. Suction from the processing chamber 50a is mainly performed using the first suction part 91a. The second suction part 91b finely adjusts the suction amount by the first suction part 91a.

  The connection part 96 connects between the suction part 91 and the flow part 93 so that the gas flows. The connection part 96 is provided with an exhaust pressure adjusting part 92.

  The exhaust pressure adjusting unit 92 reduces the exhaust pressure of the suction pressure by the suction unit 91. The exhaust pressure adjustment unit 92 includes an adjustment valve 92a, an exhaust pressure detection unit 92b, and an opening / closing control unit 92c.

  The regulating valve 92a is opened when the exhaust pressure exceeds a predetermined pressure. For example, the predetermined pressure is set to a pressure smaller than the exhaust pressure at which a large load is applied to the suction portion 91. Thereby, it is possible to prevent a large load from being applied to the suction portion 91.

  The exhaust pressure detection unit 92b detects information regarding the exhaust pressure. The exhaust pressure detection unit 92b according to the present embodiment can detect information including the magnitude of the exhaust pressure and the timing at which the suction pressure is generated as the information regarding the exhaust pressure. The exhaust pressure detection unit 92b includes a sensor that detects the magnitude of the exhaust pressure and a sensor that detects the timing at which the suction pressure is generated. Note that the exhaust pressure detection unit 92b may include only a sensor that detects the magnitude of the exhaust pressure or only a sensor that detects the timing at which the suction pressure is generated. That is, the exhaust pressure detection unit 92b only needs to be able to detect information including at least one of the magnitude of the exhaust pressure and the timing at which the suction pressure is generated as the information regarding the exhaust pressure.

  The opening / closing control unit 92c controls the opening / closing of the adjustment valve 92a based on the detection result by the exhaust pressure detection unit 92b. For example, the open / close control unit 92c performs control to open the adjustment valve 92a when the exhaust pressure exceeds a predetermined pressure, and performs control to close the adjustment valve 92a when the exhaust pressure is equal to or lower than the predetermined pressure. Do. The opening / closing control unit 92c performs control to open the adjustment valve 92a in accordance with the timing at which suction pressure is generated, and performs control to close the adjustment valve 92a when suction pressure is not generated.

  The circulation part 93 allows the gas in the processing chamber 50 a sucked by the suction part 91 to pass through. The circulation part 93 is a straight tube. The circulation part 93 according to the present embodiment is configured to have a plurality of pipes extending linearly. The plurality of pipes are arranged in a honeycomb shape when viewed from the Z direction.

  The temperature adjustment unit 94 adjusts the temperature of the gas flowing through the flow unit 93 so that the vaporized liquid contained in the gas in the processing chamber 50a is liquefied. That is, the liquefaction trap for liquefying the vaporized liquid contained in the gas in the processing chamber 50a is configured by the circulation unit 93 and the temperature adjusting unit 94. The temperature adjusting unit 94 includes a refrigerant flow pipe 94a and a refrigerant driving unit 94b.

  The refrigerant circulation pipe 94 a is disposed along the circulation part 93. The refrigerant circulation pipe 94a can circulate a refrigerant such as cooling water, for example. A plurality of pipes constituting the circulation part 93 are accommodated in the refrigerant circulation pipe 94a. The refrigerant circulation pipe 94a is configured such that the periphery of a plurality of pipes constituting the circulation part 93 is filled with the refrigerant.

  Although not shown in the figure, fins for heat dissipation may be provided on the outer peripheral surface of the refrigerant flow pipe 94a. Thereby, the cooling effect inside the refrigerant | coolant distribution pipe | tube 94a can be heightened further.

  The refrigerant drive unit 94b causes the refrigerant to flow through the refrigerant flow pipe 94a. The refrigerant driving unit 94b is formed so as to flow the refrigerant in a direction (+ Z direction) opposite to the flow direction (−Z direction) of the gas flowing through the circulation unit 93. The refrigerant driving unit 94b also has a function as a refrigerant circulation unit that returns the medium that has passed through the refrigerant circulation pipe 94a to the refrigerant circulation pipe 94a as a refrigerant.

  The connection part 97a connects between the liquefaction trap (the flow part 93 and the temperature adjustment part 94) and the filter 98 so that the liquid liquefied by the temperature adjustment part 94 flows.

  The filter 98 removes foreign substances such as dust by filtering the liquid material liquefied by the temperature adjusting unit 94. The filter 98 may not be provided, and can be provided as necessary.

  The connection part 97b connects between the filter 98 and the silencer 99 so that the liquid material filtered by the filter 98 flows.

  The silencer 99 eliminates the sound generated when the liquid material filtered by the filter 98 flows through the connection portion 97b. In addition, the silencer 99 does not need to be provided and can be provided as needed.

  The connection part 97c connects between the silencer 99 and the storage part 95 (storage tank 95a) so that the liquid material that has passed through the silencer 99 flows.

  The storage unit 95 stores the liquid material that has passed through the silencer 99. The storage unit 95 includes a storage tank 95a, a storage amount detection unit 95b, and a discharge control unit 95c.

  The storage tank 95a is a container for storing a liquid material. The storage tank 95a is detachably attached to the connection portion 97c.

  The storage amount detection unit 95b detects the amount of the liquid material stored in the storage tank 95a. For example, the storage amount detection unit 95b is a sensor that detects the height of the liquid level of the liquid material stored in the storage tank 95a.

  The discharge controller 95c discharges the liquid material according to the detection result of the storage amount detector 95b. For example, the discharge control unit 95c can control the release of the storage tank 95a from the connection part 97c when the amount of the liquid stored in the storage tank 95a exceeds a predetermined amount, and can discharge the liquid from the storage tank 95a. And On the other hand, when the amount of the liquid material stored in the storage tank 95a is equal to or less than a predetermined amount, control is performed so that the storage tank 95a is connected to the connection portion 97c.

(Second chamber)
As shown in FIG.1 and FIG.2, 2nd chamber CB2 is arrange | positioned on the base BB mounted in the floor surface FL. The second chamber CB2 is formed in a rectangular parallelepiped box shape. A processing chamber 60a is formed in the second chamber CB2. The firing part BK is provided in the processing chamber 60a. The firing unit BK fires the coating film applied on the substrate S.

  The second chamber CB2 has an opening 61. The opening 61 communicates the processing chamber 60a and the outside of the second chamber CB2. The opening 61 is formed on the surface on the −X side of the second chamber CB2. The opening 61 is formed in a dimension that allows the substrate S to pass therethrough. The substrate S is taken in and out of the second chamber CB2 through the opening 61.

The firing unit BK includes a substrate transport unit 65, a gas supply unit 68, an exhaust unit 69, and a heating chamber 70.
The substrate transport unit 65 includes a plurality of rollers 67 and an arm unit 71. A pair of rollers 67 is arranged in the Y direction, and a plurality of the pair of rollers 67 are arranged in the X direction. The plurality of rollers 67 support the substrate S disposed in the processing chamber 60 a through the opening 61.

  By rotating each roller 67 clockwise or counterclockwise around the Y axis while supporting the substrate S, the substrate S supported by each roller 67 is conveyed in the X direction (+ X direction or −X direction). The In addition, you may use the floating conveyance part not shown which floats and conveys a board | substrate.

  The arm unit 71 and the heating chamber 70 are disposed on a gantry 74. The arm unit 71 delivers the substrate S between the plurality of rollers 67 and the heating chamber 70. The arm unit 71 includes a transfer arm 72 and an arm driving unit 73. The transfer arm 72 has a substrate support part 72a and a moving part 72b. The substrate support part 72a supports the + Y side and −Y side sides of the substrate S. The moving part 72b is connected to the substrate support part 72a, is movable in the X direction, and is rotatable in the θZ direction.

  The arm driving unit 73 drives the moving unit 72b in the X direction or the θZ direction. When the moving unit 72b is moved in the + X direction by the arm driving unit 73, the substrate support unit 72a is inserted into the heating chamber 70, and the substrate S is disposed at the center of the heating chamber 70 as viewed in the Z direction. It is like that.

FIG. 7 is a cross-sectional view showing the configuration of the heating chamber 70.
As shown in FIG. 7, the heating chamber 70 includes a first accommodating portion 81, a second accommodating portion 82, a first heating plate 83, a second heating plate 84, a lift portion 85, a sealing portion 86, a gas supply portion 87, and An exhaust part 88 is provided.

  The first accommodating portion 81 is formed in a rectangular bowl shape when viewed in the Z direction, and is placed on the bottom of the heating chamber 70 so that the opening portion faces the + Z side. The second storage portion 82 is formed in a rectangular bowl shape when viewed in the Z direction, and is disposed so that the opening portion faces the first storage portion 81. The 2nd accommodating part 82 is movable to a Z direction using the raising / lowering mechanism not shown. By overlapping the edge portion 82 a of the second storage portion 82 with the edge portion 81 a of the first storage portion 81, the insides of the first storage portion 81 and the second storage portion 82 are sealed. In this case, the firing chamber 80 sealed by the first storage portion 81, the second storage portion 82, and the sealing portion 86 is formed.

  The first heating plate 83 is accommodated in the first accommodating portion 81. The first heating plate 83 heats the substrate S in a state where the substrate S is placed. The first heating plate 83 is formed using, for example, quartz, and a heating device such as an infrared device or a hot plate is provided inside. The temperature of the first heating plate 83 can be adjusted to about 200 ° C. to 800 ° C., for example. A plurality of through holes 83 a are formed in the first heating plate 83. The through hole 83a penetrates a part of the lift portion 85.

  The second heating plate 84 is accommodated in the second accommodating portion 82. The second heating plate 84 is formed using, for example, a metal material, and a heating device such as an infrared device or a hot plate is provided inside. The temperature of the second heating plate 84 can be adjusted to about 200 ° C. to 800 ° C., for example. The second heating plate 84 is provided so as to be movable in the Z direction separately from the second accommodating portion 82 by a lifting mechanism (not shown). The distance between the second heating plate 84 and the substrate S can be adjusted by moving the second heating plate 84 in the Z direction.

  The lift unit 85 moves the substrate S between the arm unit 71 (see FIGS. 1 and 2) and the first heating plate 83. The lift portion 85 includes a plurality of support pins 85a and a moving portion 85b that holds the support pins 85a and is movable in the Z direction. In order to make the illustration easy to discriminate, FIG. 7 shows a configuration in which two support pins 85a are provided, but in actuality, for example, 16 pieces can be arranged. The plurality of through holes 83a provided in the first heating plate 83 are arranged at positions corresponding to the plurality of support pins 85a in the Z direction view.

  The sealing portion 86 is formed on the edge portion 81 a of the first housing portion 81. As the sealing portion 86, for example, an O-ring formed using a resin material or the like can be used. The sealing portion 86 seals between the first housing portion 81 and the second housing portion 82 in a state where the edge portion 82a of the second housing portion 82 is overlapped with the edge portion 81a of the first housing portion 81. To do. For this reason, the inside of the 1st accommodating part 81 and the 2nd accommodating part 82 can be sealed.

  The gas supply unit 87 supplies nitrogen gas or the like to the processing chamber 60a. The gas supply unit 87 is connected to the + Z side surface of the heating chamber 70. The gas supply unit 87 includes a gas supply source 87 a such as a gas cylinder or a gas pipe, and a connection pipe 87 b that connects the gas supply source 87 a and the second storage unit 82. The gas supply source 87a includes a nitrogen gas supply source and a gas source containing a chalcogen element (eg, hydrogen sulfide, hydrogen selenide). Note that the gas supply source 87a may have another gas supply source.

  The exhaust unit 88 sucks the processing chamber 60 a and discharges the gas in the processing chamber 60 a to the outside of the heating chamber 70. The exhaust unit 88 is connected to the surface on the −Z side of the heating chamber 70. The exhaust unit 88 includes a suction source 88 a such as a pump, and a connection pipe 88 b that connects the suction source 88 a and the first storage unit 81.

  In the present embodiment, gas concentration detectors SR1 and SR2 are provided in the heating chamber 70. The gas concentration detectors SR <b> 1 and SR <b> 2 detect the concentration of the gas containing the chalcogen element in the atmosphere around the substrate accommodated in the heating chamber 70. Moreover, gas concentration detection part SR1, SR2 transmits a detection result to the control part CONT.

  In the present embodiment, the gas concentration detectors SR1 and SR2 can detect a gas containing at least one of sulfur and selenium as a chalcogen element. Examples of such a gas include hydrogen sulfide and hydrogen selenide. Each of the gas concentration detectors SR1 and SR2 has at least one of a sensor that detects hydrogen sulfide and a sensor that detects hydrogen selenide. In addition, the gas concentration detection unit SR1 may include a sensor capable of detecting sublimated single sulfur or selenium.

  The gas concentration detection part SR <b> 1 is provided in the ceiling part 82 b of the second accommodation part 82 in the heating chamber 70. The detection surface SRa of the gas concentration detection unit SR1 is directed to the −Z side, and is disposed so as to face the second heating plate 84 on which the substrate S is placed. With this arrangement, the gas concentration detector SR1 is arranged to face the surface of the substrate S on which the liquid material is applied. The gas concentration detection unit SR1 is preferably arranged at a position outside the region that directly receives the gas supplied from the connection pipe 87b of the gas supply unit 87. Therefore, the structure arrange | positioned at the wall part side of the 2nd accommodating part 82 rather than the position shown in FIG. Further, a shielding part (not shown) that shields gas may be disposed between the gas concentration detection part SR1 and the connection pipe 87b.

  Note that the position of the gas concentration detection unit SR1 is not limited to the second storage unit 82 as long as the position is opposed to the surface of the substrate S, and may be arranged at another position. As such other positions, for example, a support member (not shown) is extended from a part of the second accommodating portion 82 to the −Z side of the second heating plate 84, and the gas concentration detection portion is connected to the support member. It is good also as a structure to which SR1 was attached. Moreover, the structure by which gas concentration detection part SR1 is arrange | positioned in parts (for example, wall part etc.) different from the ceiling part 82b of the 2nd accommodating part 82 may be sufficient. In addition, a protection unit (including a heat insulating cover, a cooling mechanism, and the like) that protects the wiring portion connected to the gas concentration detection units SR1 and SR2 from heat may be provided.

  On the other hand, the gas concentration detection part SR <b> 2 is provided in the bottom part 81 b of the first housing part 81 in the heating chamber 70. The gas concentration detection unit SR2 is disposed in the vicinity of the connection pipe 88b of the exhaust unit 88. The detection surface SRb of the gas concentration detector SR2 is directed to the + Z side. The gas concentration detector SR2 may have a configuration provided inside the connection pipe 88b.

  In the present embodiment, a solid supply unit 89 is provided. The solid supply unit 89 supplies a solid containing a chalcogen element into the heating chamber 70. Examples of such chalcogen elements include sulfur and selenium solids. In FIG. 7, as an example, a configuration in which the solid supply unit 89 supplies the solid from the side portion of the first storage unit 81 to the bottom portion 81 b is shown, but the configuration is not limited thereto. For example, the solid may be supplied into the heating chamber 70 from the ceiling portion 82b side of the second housing portion 82. In addition, a solid arrangement portion (such as a trapezoidal shape or a shelf shape) for arranging a solid is previously formed in at least one of the first accommodation portion 81 and the second accommodation portion 82, and the solid supply portion 89 is provided in the solid arrangement portion. The structure which arrange | positions solid may be sufficient. In addition, a container or a housing part that has an openable / closable lid and accommodates the solid is disposed inside the heating chamber 70, and when the solid is supplied into the heating chamber 70, the lid of the container is opened, When not supplying, it is good also as a structure which closes a lid | cover.

(Substrate transport path)
As shown in FIG. 1, the second opening 12 of the substrate supply and recovery unit LU, the first opening 21 and the second opening 22 of the coating unit CT, the first opening 51 and the second opening of the vacuum drying unit VD. 52, the opening part 61 of the baking part BK is provided along with the straight line parallel to a X direction. For this reason, the substrate S moves on a straight line in the X direction. In addition, as shown in FIG. 2, the position in the Z direction is maintained in the path from the substrate S to the heating chamber 70 of the baking unit BK from the substrate supply / recovery unit LU. For this reason, stirring of the surrounding gas by the board | substrate S is suppressed.

(Anti-chamber)
As shown in FIG. 1, anti-chambers AL1 to AL3 are connected to the first chamber CB1.
The anti-chambers AL1 to AL3 are provided in communication with the inside and outside of the first chamber CB1. The anti-chambers AL1 to AL3 are paths for taking out the components of the processing chamber 20a to the outside of the first chamber CB1 and for inserting the components into the processing chamber 20a from the outside of the first chamber CB1, respectively.

  The anti-chamber AL1 is connected to the discharge unit 31. The nozzle NZ provided in the discharge unit 31 can be taken into and out of the processing chamber 20a through the anti-chamber AL1.

  The anti-chamber AL <b> 2 is connected to the liquid material supply unit 33. In the liquid material supply unit 33, the processing chamber 20a can be taken in and out through the anti-chamber AL2.

  The anti-chamber AL3 is connected to the waste liquid reservoir 35. In the waste liquid storage unit 35, the liquid can be taken in and out of the processing chamber 20a through the anti-chamber AL3. The anti-chamber AL3 is formed to have a dimension that allows the substrate S to pass therethrough. For this reason, for example, when performing a trial coating of the liquid material in the application part CT, it is possible to supply the unprocessed substrate S from the anti-chamber AL3 to the processing chamber 20a. Further, it is possible to take out the substrate S after the trial coating from the anti-chamber AL3. Further, it is possible to take out the substrate S temporarily from the anti-chamber AL3 in an emergency or the like.

The anti-chamber AL4 is connected to the second chamber CB2.
The anti-chamber AL4 is connected to the heating chamber 70. The anti-chamber AL4 is formed to have a dimension that allows the substrate S to pass therethrough. For this reason, for example, when heating the substrate S in the heating chamber 70, the substrate S can be supplied from the anti-chamber AL4 to the processing chamber 60a. In addition, the substrate S after the heat treatment can be taken out from the anti-chamber AL4.

(Glove part)
As shown in FIG. 1, a globe part GX1 is connected to the first chamber CB1. In addition, a glove part GX2 is connected to the second chamber CB2.
The glove parts GX1 and GX2 are parts for the operator to access the first chamber CB1 and the second chamber CB2. When an operator inserts a hand into the glove parts GX1 and GX2, a maintenance operation and the like in the first chamber CB1 and the second chamber CB2 can be performed. The globe parts GX1 and GX2 are formed in a bag shape. The globe parts GX1 and GX2 are arranged at a plurality of locations in the first chamber CB1 and the second chamber CB2, respectively. A sensor or the like for detecting whether or not an operator puts a hand in the globe parts GX1 and GX2 may be arranged in the first chamber CB1 and the second chamber CB2.

(Gate valve)
As shown in FIGS. 1 and 2, a gate valve V <b> 1 is provided between the second opening 12 of the substrate supply / recovery unit LU and the first opening 21 of the coating unit CT. The gate valve V1 is provided so as to be movable in the Z direction by a driving unit (not shown). By moving the gate valve V1 in the Z direction, the second opening 12 of the substrate supply and recovery unit LU and the first opening 21 of the coating unit CT are simultaneously opened or closed. When the second opening 12 and the first opening 21 are simultaneously opened, the substrate S can be moved between the second opening 12 and the first opening 21.

  A gate valve V2 is provided between the second opening 22 of the first chamber CB1 and the first opening 51 of the third chamber CB3. The gate valve V2 is provided so as to be movable in the Z direction by a driving unit (not shown). By moving the gate valve V2 in the Z direction, the second opening 22 of the first chamber CB1 and the first opening 51 of the third chamber CB3 are simultaneously opened or closed. When the second opening 22 and the first opening 51 are simultaneously opened, the substrate S can be moved between the second opening 22 and the first opening 51.

  A gate valve V3 is provided between the second opening 52 of the third chamber CB3 and the opening 61 of the second chamber CB2. The gate valve V3 is provided so as to be movable in the Z direction by a drive unit (not shown). By moving the gate valve V3 in the Z direction, the second opening 52 of the third chamber CB3 and the opening 61 of the second chamber CB2 are simultaneously opened or closed. When the second opening 52 and the opening 61 are simultaneously opened, the substrate S can be moved between the second opening 52 and the opening 61.

(Control device)
The control part CONT is a part that comprehensively controls the coating apparatus CTR. Specifically, the operation of the substrate supply / recovery unit LU, the coating unit CT, the vacuum drying unit VD, the baking unit BK, the operation of the gate valves V1 to V3, and the like are controlled. As an example of the adjustment operation, the control unit CONT adjusts the supply amount of the gas supply unit 68 based on the detection results by the gas concentration detection units SR1 and SR2. The control unit CONT has a timer (not shown) used for processing time measurement and the like.

(Application method)
Next, the coating method according to this embodiment will be described. In the present embodiment, a coating film containing metal is formed on the substrate S using the coating apparatus CTR configured as described above. The operation performed in each part of the coating apparatus CTR is controlled by the control part CONT.

  First, the control unit CONT carries the substrate S into the substrate supply / recovery unit LU from the outside. In this case, the control part CONT opens the cover part 14 with the gate valve V <b> 1 closed, and accommodates the substrate S in the accommodation room 10 a of the chamber 10. After the board | substrate S is accommodated in the storage chamber 10a, the control part CONT closes the cover part 14. FIG.

  After the lid part 14 is closed, the control part CONT opens the gate valve V1, and makes the accommodation chamber 10a of the chamber 10 communicate with the processing chamber 20a of the first chamber CB1 of the application part CT. After the gate valve V1 is opened, the control unit CONT uses the substrate transfer unit 15 to transfer the substrate S in the X direction.

  After a part of the substrate S is inserted into the processing chamber 20a of the first chamber CB1, the control unit CONT uses the substrate transport unit 25 to completely carry the substrate S into the processing chamber 20a. After the substrate S is loaded, the control unit CONT closes the gate valve V1. The controller CONT closes the gate valve V1, and then transports the substrate S to the processing stage 28.

8-12 is a figure which shows the process of the coating process of the coating device CTR which concerns on this embodiment.
As shown in FIG. 8, when the substrate S is placed on the processing stage 28, a coating process is performed in the coating unit CT. Prior to the coating process, the control unit CONT closes the gate valves V1 and V2, and supplies and sucks inert gas using the gas supply unit 37a and the exhaust unit 37b (see FIGS. 1 and 2). To do.

  By this operation, the atmosphere and pressure in the processing chamber 20a are adjusted. After adjusting the atmosphere and pressure in the processing chamber 20a, the control unit CONT moves the nozzle NZ from the nozzle standby unit 44 to the nozzle tip management unit 45 using the nozzle driving unit NA (not shown in FIG. 8). Thereafter, the control unit CONT continuously performs the adjustment operation of the atmosphere and pressure in the processing chamber 20a during the coating process.

  After the nozzle NZ reaches the nozzle tip management unit 45, the control unit CONT causes the nozzle NZ to perform a preliminary discharge operation as shown in FIG. In the preliminary discharge operation, the control unit CONT discharges the liquid material Q from the discharge port OP. After the preliminary discharge operation, as shown in FIG. 10, the control unit CONT moves the wiping unit 45a in the X direction along the guide rail 45b, and wipes the tip TP of the nozzle NZ and the inclined portion in the vicinity thereof.

  After wiping the tip TP of the nozzle NZ, the control unit CONT moves the nozzle NZ to the processing stage 28. After the discharge port OP of the nozzle NZ reaches the −Y side end of the substrate S, the control unit CONT moves the nozzle NZ in the + Y direction at a predetermined speed and moves the substrate from the discharge port OP as shown in FIG. The liquid material Q is discharged toward S. By this operation, the coating film F of the liquid material Q is formed on the substrate S.

  After forming the coating film F of the liquid material Q in a predetermined region of the substrate S, the control unit CONT uses the substrate transport unit 25 to transfer the substrate S from the processing stage 28 to the second chamber CB2, as shown in FIG. Move in + X direction. Further, the control unit CONT moves the nozzle NZ in the −Y direction and returns it to the nozzle standby unit 44.

  FIG. 13 to FIG. 16 are diagrams showing a process of vacuum drying processing of the coating apparatus CTR according to the present embodiment. The reduced-pressure drying process according to the present embodiment includes a recovery process for recovering a part of the liquid material vaporized in the reduced-pressure drying unit VD.

  After the substrate S reaches the second opening 22 of the first chamber CB1, as shown in FIG. 13, the control unit CONT opens the gate valve V2, and moves the substrate S from the first chamber CB1 to the second chamber CB2. And transport. In addition, when performing the said conveyance step, the board | substrate S passes through 3rd chamber CB3 arrange | positioned at the connection part CN. When the substrate S passes through the third chamber CB3, the control unit CONT causes the substrate S to be dried using the reduced pressure drying unit VD. Specifically, after the substrate S is accommodated in the processing chamber 50a of the third chamber CB3, the control unit CONT closes the gate valve V2, as shown in FIG.

  After closing the gate valve V2, the control unit CONT adjusts the position of the heating unit 53 in the Z direction using the lifting mechanism 53a. Thereafter, as shown in FIG. 15, the control unit CONT adjusts the atmosphere of the processing chamber 50 a using the gas supply unit 58 and depressurizes the processing chamber 50 a using the suction unit 91. When the processing chamber 50a is depressurized by this operation, evaporation of the solvent contained in the coating film F formed on the substrate S is promoted, and the coating film F is dried. Note that the control unit CONT may adjust the position of the heating unit 53 in the Z direction using the lifting mechanism 53a while performing the pressure reducing operation for reducing the pressure of the processing chamber 50a using the suction unit 91.

  Further, as shown in FIG. 15, the control unit CONT heats the coating film F on the substrate S using the heating unit 53. By this operation, evaporation of the solvent contained in the coating film F on the substrate S is promoted, and the drying process under reduced pressure can be performed in a short time. The control unit CONT may adjust the position of the heating unit 53 in the Z direction using the lifting mechanism 53a while the heating unit 53 performs the heating operation.

  In the recovery process, the control part CONT uses the suction part 91 to suck the gas in the processing chamber 50a as shown in FIG. The control unit CONT uses the exhaust pressure adjusting unit 92 to reduce the exhaust pressure of the suction pressure by the suction unit 91. Specifically, the exhaust pressure detection unit 92b detects information including the magnitude of the exhaust pressure and the timing at which the suction pressure is generated, and the open / close control unit 92c opens and closes the adjustment valve 92a based on the detection result by the exhaust pressure detection unit 92b. Control.

  Thereafter, the circulation part 93 allows the gas in the processing chamber 50 a sucked by the suction part 91 to pass therethrough. During this operation, the temperature adjustment unit 94 adjusts the temperature of the gas flowing through the flow unit 93 so that the vaporized liquid contained in the gas is liquefied. Specifically, the refrigerant flow pipe 94a circulates the refrigerant along the straight tubular flow part 93, and the refrigerant driving part 94b is in a direction opposite to the gas flow direction (−Z direction) (+ Z direction) flowing through the flow part 93. ). By this operation, liquefaction of the gas in the processing chamber 50a sucked by the suction portion 91 is promoted.

  The liquid material liquefied by the temperature adjusting unit 94 is stored in the storage unit 95 (storage tank 95a). The storage amount detection unit 95b detects the amount of the liquid material stored in the storage tank 95a. The discharge controller 95c discharges the liquid material according to the detection result of the storage amount detector 95b.

  For example, as shown in FIG. 15, the discharge control unit 95 c performs a control for setting the storage tank 95 a to the connection unit 97 c when the amount of the liquid material stored in the storage tank 95 a is equal to or less than a predetermined amount. Do. As shown in FIG. 16, the discharge control unit 95c performs control to release the storage tank 95a from the connection unit 97c when the amount of the liquid material stored in the storage tank 95a exceeds a predetermined amount. The liquid can be discharged.

  After the drying under reduced pressure, the control unit CONT opens the gate valve V3 and transports the substrate S from the connection unit CN to the second chamber CB2, as shown in FIG. After the substrate S is accommodated in the processing chamber 60a of the second chamber CB2, the control unit CONT closes the gate valve V3.

FIGS. 17-21 is a figure which shows the process of the baking process of the coating device CTR which concerns on this embodiment.
By the movement of the substrate support portion 72a, the substrate S is arranged at the center portion on the first heating plate 83 as shown in FIG. Thereafter, the control unit CONT moves the lift unit 85 in the + Z direction as shown in FIG. By this operation, the substrate S is separated from the substrate support portion 72 a of the transport arm 72 and is supported by the plurality of support pins 85 a of the lift portion 85. In this way, the substrate S is transferred from the substrate support portion 72a to the lift portion 85. After the substrate S is supported by the support pins 85 a of the lift unit 85, the control unit CONT retracts the substrate support unit 72 a to the outside of the heating chamber 70 in the −X direction.

  After retracting the substrate support part 72a, the control part CONT moves the lift part 85 in the -Z direction and moves the second storage part 82 in the -Z direction as shown in FIG. By this operation, the edge portion 82a of the second accommodating portion 82 overlaps the edge portion 81a of the first accommodating portion 81, and the sealing portion 86 is sandwiched between the edge portion 82a and the edge portion 81a. For this reason, the baking chamber 80 sealed with the 1st accommodating part 81, the 2nd accommodating part 82, and the sealing part 86 is formed (accommodating step).

  After forming the baking chamber 80, the control unit CONT moves the lift unit 85 in the -Z direction to place the substrate S on the first heating plate 83, as shown in FIG. After the substrate S is placed on the first heating plate 83, the control unit CONT moves the second heating plate 84 in the −Z direction to bring the second heating plate 84 and the substrate S closer to each other. The controller CONT adjusts the position of the second heating plate 84 in the Z direction as appropriate.

  After adjusting the position of the second heating plate 84 in the Z direction, the control unit CONT uses the gas supply unit 87 to enter the nitrogen gas, hydrogen sulfide gas, hydrogen selenide gas into the firing chamber 80 as shown in FIG. And the baking chamber 80 is sucked using the exhaust part 88. By this operation, the atmosphere and pressure in the firing chamber 80 are adjusted, and an air stream of nitrogen gas, hydrogen sulfide gas, and hydrogen selenide gas is formed from the second storage portion 82 to the first storage portion 81. In a state in which an air flow of nitrogen gas, hydrogen sulfide gas, and hydrogen selenide gas is formed, the control unit CONT operates the first heating plate 83 and the second heating plate 84 to perform the firing operation of the substrate S (heating) Step). By this operation, the solvent component evaporates from the coating film F of the substrate S, and bubbles contained in the coating film F are removed. Further, the solvent component, bubbles, and the like evaporated from the coating film F are pushed away by the air flow of nitrogen gas, hydrogen sulfide gas, and hydrogen selenide gas, and are sucked from the exhaust unit 88.

  In the firing operation of the substrate S, the control unit CONT detects the concentration of a predetermined gas (eg, hydrogen sulfide gas, hydrogen selenide gas) containing sulfur element and selenium element among the gases in the heating chamber 70 (detection step). ). The controller CONT uses the gas concentration detectors SR1 and SR2 for this detection. The control unit CONT operates the gas concentration detection units SR1 and SR2 after the hydrogen sulfide gas and hydrogen selenide gas are supplied from the gas supply unit 87 to the firing chamber 80 from the gas supply unit 87, and the sulfurization gas is detected. The concentration of hydrogen gas or hydrogen selenide gas is detected. The gas concentration detectors SR1 and SR2 detect the concentrations of hydrogen sulfide gas and hydrogen selenide gas, and the detection results are transmitted to the controller CONT.

  Since the gas concentration detection unit SR1 performs detection at a position facing the surface of the substrate S on which the liquid F is applied, the concentration of hydrogen sulfide gas and hydrogen selenide gas around the substrate S is efficiently detected. Is done. Further, the concentration of hydrogen sulfide gas and hydrogen selenide gas contained in the gas exhausted from the connection pipe 88b is detected by the gas concentration detector SR2.

  The control unit CONT adjusts the concentration of hydrogen sulfide gas and hydrogen selenide gas in the heating chamber 70 (in the baking chamber 80) based on the detection result (adjustment step). In this adjustment, the control unit CONT determines that the control unit CONT exceeds the first threshold value on the lower limit side set in advance and falls below the second threshold value set on the upper limit side as described above. The heating operation is performed while the supply of hydrogen sulfide gas and hydrogen selenide gas is continued.

  On the other hand, when the detection result falls below the first threshold (lower threshold), the control unit CONT supplies the hydrogen sulfide gas and the hydrogen selenide gas into the heating chamber 70 using the gas supply unit 87 (supply step). . This supply step includes increasing the supply amount of the hydrogen sulfide gas and hydrogen selenide gas supplied to the heating chamber 70. The controller CONT maintains the supply amount of the hydrogen sulfide gas and the hydrogen selenide gas while increasing the detection result until the detection result exceeds the first threshold value.

  When the detection result exceeds the second threshold (upper limit threshold), the gas supply unit 87 reduces the supply amount of hydrogen sulfide gas and hydrogen selenide gas, and supplies hydrogen sulfide gas and hydrogen selenide gas. The concentration of hydrogen sulfide gas and hydrogen selenide gas in the heating chamber 70 is reduced by performing either the operation of stopping the operation or the operation of exhausting the gas in the heating chamber 70 using the exhaust unit 88. Let The control unit CONT causes at least one of reduction of the supply amount of hydrogen sulfide gas and hydrogen selenide gas, stop of supply, and exhaust (exhaust step) until the detection result falls below the second threshold value.

  In the baking operation, at least one component of the metal components contained in the coating film F is heated to the melting point or higher to dissolve at least a part of the coating film F. For example, when the coating film F is used for a CZTS type solar cell, among the components constituting the coating film F, Ti, S, and Se are heated to the melting point or higher, and these substances are liquefied and applied. Aggregate the membrane F. Thereafter, the coating film F is cooled to a temperature at which the coating film F is solidified. By solidifying the coating film F, the strength of the coating film F is increased.

  After such a baking operation is completed, the control unit CONT transports the substrate S in the −X direction. Specifically, the substrate is unloaded from the baking unit BK through the substrate transfer unit 65 from the heating chamber 70, and returned to the substrate supply / recovery unit LU through the vacuum drying unit VD and the coating unit CT. After the substrate S is returned to the substrate supply / recovery unit LU, the control unit CONT opens the lid 14 with the gate valve V1 closed. Thereafter, the operator collects the substrate S in the chamber 10 and accommodates the new substrate S in the accommodation chamber 10 a of the chamber 10.

  When the substrate S is returned to the substrate supply / recovery unit LU and then another coating film is formed on the coating film F formed on the substrate S, the control unit CONT again applies the substrate S to the coating unit. It is made to convey to CT and a coating process, a reduced pressure drying process, and a baking process are repeatedly performed. In this way, the coating film F is laminated on the substrate S.

  As described above, according to the present embodiment, the exhaust pressure adjusting unit 92 reduces the exhaust pressure of the suction pressure by the suction unit 91, so that the processing chamber 50 a of the decompression drying unit VD can be rapidly moved by the suction unit 91 with a strong pressure. Even if the pressure is reduced, it is possible to suppress sudden generation of strong exhaust pressure. Therefore, it can suppress that a big load is applied to the suction part 91, and can protect the suction part 91.

  Moreover, when the exhaust pressure exceeds a predetermined pressure, the adjustment valve 92a is opened, so that it is possible to reliably prevent a large load from being applied to the suction portion 91. For example, by setting the predetermined pressure to a pressure smaller than the exhaust pressure that applies a large load to the suction portion 91, it is possible to prevent a large load from being applied to the suction portion 91. Therefore, the suction part 91 can be sufficiently protected.

  In addition, since the opening / closing control unit 92c can adjust the opening / closing of the regulating valve 92a using the detection result of the exhaust pressure detecting unit 92b, the recovery device 90 having an excellent ability to adjust the degree of reduction of the exhaust pressure can be obtained. .

  Moreover, since the exhaust pressure of the suction pressure by the suction portion 91 can be reduced by detecting information including at least one of the magnitude of the exhaust pressure and the timing at which the suction pressure is generated, a large load is applied to the suction portion 91. This can be reliably suppressed. Therefore, the suction part 91 can be sufficiently protected.

  Further, since the circulation part 93 is formed in a straight tube shape, the gas in the processing chamber 50a sucked by the suction part 91 flows smoothly through the circulation part 93. Therefore, a part of the liquid material vaporized in the vacuum drying part VD is removed. It can be recovered efficiently.

  In addition, the temperature adjustment unit 94 includes a refrigerant circulation pipe 94a that is arranged along the circulation part 93 and through which the refrigerant can circulate, and a refrigerant driving unit 94b that circulates the refrigerant in the refrigerant circulation pipe 94a. Since the gas in the processing chamber 50a sucked by the gas is cooled and liquefied by the circulation part 93, a part of the liquid material vaporized by the vacuum drying part VD can be efficiently recovered.

Moreover, since the refrigerant | coolant drive part 94b is formed so that a refrigerant | coolant may flow in the direction opposite to the distribution direction of the gas which flows through the circulation part 93, the gas which flows through the circulation part 93 can be cooled efficiently. The gas in the processing chamber 50a sucked by the suction part 91 is easily liquefied. Therefore, a part of the liquid material vaporized in the reduced pressure drying unit VD can be efficiently recovered.

  In addition, since the storage unit 95 includes a storage amount detection unit 95b that detects the amount of stored liquid material, it is possible to accurately detect the amount of liquid material stored in the storage unit 95 (storage tank 95a). it can.

  In addition, the storage unit 95 includes the discharge control unit 95c that discharges the liquid according to the detection result of the storage amount detection unit 95b, so that the amount of the liquid stored in the storage unit 95 (storage tank 95a) is predetermined. Can be maintained. Therefore, it can suppress that a liquid body overflows from the storage part 95 (storage tank 95a).

  In addition, as the 1st liquid material accommodating part 33a and the 2nd liquid material accommodating part 33b which comprise the liquid material supply part 33, the link system which uses the same container repeatedly, and the one-way system which uses a new container each time were compounded. Alternatively, a so-called dual storage type container (hereinafter simply referred to as a container) may be used.

  FIG. 22 is a diagram showing a configuration of the container 200 according to the present embodiment. FIG. 23 is a cross-sectional exploded view of the top end portion of the container 200 according to the present embodiment. FIG. 24 is a cross-sectional exploded view of the container 200 according to the present embodiment.

  As shown in FIG. 22, the container 200 includes a bag 212 and an outer container 213. The bag 212 has a neck portion 211 that opens so that liquid can be injected. The outer container 213 can accommodate the bag 212 by supporting the neck portion 211 with the mouth portion 213a.

  The bag 212 includes a flexible film bag made of an inert material and a neck portion 211 made of a synthetic resin. The neck portion 211 is welded to the end of the bag. The bag 212 has been washed in advance and is accommodated in the outer container 213. After the liquid is discharged from the bag 212, the bag 212 with the neck portion 211 is discarded, and a new bag 212 with the neck portion 211 is accommodated in the outer container 213. The container 200 is a double storage type container in which the outer container 213 is repeatedly used and a new bag is used each time.

  For example, as the outer container 213, a steel drum can configured by a bottom plate, a side wall having an annular zone, and a top plate having a raised center may be used. The outer container 213 may be easily transported by forming a male screw in the mouth 213a and forming a pair of handles (not shown).

  As shown in FIG. 23, a flange is formed on the opening side of the neck portion 211. On the other hand, a step is provided on the inner wall of the mouth 213a. When the flange of the neck part 211 is locked to the step, the neck part 211 is supported by the mouth part 213a.

  After the bag 212 is accommodated in the outer container 213 and the neck portion 211 attached to the bag 212 is supported by the mouth 213a of the outer container 213, the bag 212 is expanded by nitrogen or compressed air. Thereafter, liquid is injected into the bag 212 from the opening 211 a of the neck portion 211.

  The container 200 includes a retainer 214 and a liquid discharge tube 215. The retainer 214 is held by the mouth 213a. A substantially cylindrical header portion 214 a is provided on one end side of the retainer 214, and a cylinder portion 214 b is provided on the other end side of the retainer 214. The cylindrical portion 214b is provided so as to protrude from the bottom portion of the retainer 214. A through hole 214c that penetrates from one end to the other end of the tube portion 214b is formed in the tube portion 214b. The header part 214 a is raised from the bottom surface of the retainer 214. The cylindrical portion 214b is fitted into the opening 211a of the neck portion 211.

  On one end side of the liquid discharge tube 215, a flange portion 215a that is in close contact with the top surface 241 of the header portion 214a is provided. The portion on the other end side of the liquid discharge tube 215 is inserted into the through hole 214 c of the retainer 214. In the liquid discharge tube 215, a fluid passage 215b extending from one end to the other end of the liquid discharge tube 215 is formed. The liquid in the bag 212 is discharged through the fluid passage 215b.

  The outer diameter of the retainer 214 is slightly smaller than the inner diameter of the neck portion 211. A retainer 214 is fitted to the neck portion 211. One end of the retainer 214 is provided with a flange having an outer diameter slightly smaller than the inner diameter of the mouth 213a. The O-ring 221 is supported on the flange, and the mouth portion 213a is sealed (see FIG. 24).

  As shown in FIG. 22, the retainer 214 is held in the mouth portion 213 a together with the neck portion 211 by the lid 216 being fastened to the mouth portion 213 a. As shown in FIG. 23, a gap is formed between the bottom outer wall of the retainer 214 and the bottom inner wall of the mouth 213 a, and a plurality of first openings 211 b formed at the bottom of the neck portion 211 and the retainer 214 are formed. Gas can be passed between the plurality of second openings 214d.

  As shown in FIG. 23, an O-ring 222 is carried inside the opening 211 a of the neck portion 211. As shown in FIG. 24, the O-ring 222 is in close contact with the outer periphery of the cylindrical portion 214b, whereby the gas in the bag 212 can be sealed. A gap is formed in the outer periphery of the through hole 214c and the liquid discharge tube 215 so that the gas in the bag 212 can flow through the plurality of third openings 215c.

  The plurality of first openings 211 b are formed at the bottom of the neck portion 211 and communicate the inside of the outer container 213 with the inside of the neck portion 211. The plurality of second openings 214d communicate with the top surface 241 of the header part 214a from the periphery of the cylinder part 214b. The plurality of third openings 215c are formed in the flange portion 215a of the liquid discharge tube 215, and communicate the mouth portion 213a and the inside of the through hole 214c of the retainer 214.

  When the cap 217 is attached, the container 200 prevents both liquid and gas from flowing out from the mouth 213a. On the other hand, when the cap 217 is removed, before the liquid in the liquid discharge tube 215 is discharged to the mouth 213a, the gas in the outer container 213 and the gas in the bag 212 are the first opening 211b and the second opening, respectively. It escapes out of the mouth part 213a through 214d and the third opening 215c.

  As shown in FIG. 23, the first opening 211 b is a through hole formed at the bottom of the neck portion 211. The first opening 211b is formed around the opening 211a of the neck part 211 into which the cylindrical part 214b is inserted. As shown in FIG. 24, the first opening 211b substantially communicates the internal space of the outer container 213 with the gap formed between the retainer 214 and the mouth portion 213a. The second opening 214d may be a slit that penetrates from the periphery of the tube portion 214b to the top surface 241 of the header portion 214a. The second opening 214d is formed between the cylinder portion 214b and the header portion 214a. The second opening 214d substantially communicates the gap formed between the retainer 214 and the neck portion 211 with the atmosphere.

  The third opening 215 c is a through hole formed in the flange portion 215 a of the liquid discharge tube 215. The third opening 215c penetrates from the upper surface of the flange 215a to the periphery of the tube. An O-ring 223 is supported on the lower surface of the flange portion 215a. The O-ring 223 is in close contact with the top surface 241 of the header portion 214a, thereby sealing the through hole 214c. The third opening 215c substantially communicates the gap formed in the inner wall of the through hole 214c and the outer wall of the liquid discharge tube 215 with the atmosphere.

  The cap 217 is screwed into the lid 216 provided in the mouth portion 213a. The cap 217 includes a cap body 217a and a bush 217b. The cap body 217a is screwed into the lid 216. The bush 217b protrudes inside the cap body 217a. The bush 217b includes an O-ring 271 that is in close contact with the surface of the flange portion 215a and seals ventilation from the fluid passage 215b. The cap body 217a is made of a metal body.

  As shown in FIG. 22, a male screw that is screwed into the lid 216 is provided on the inner periphery of the cap body 217a. When the cap 217 is tightened, the inner wall of the cap body 217 a comes into contact with the top surface of the retainer 214. The cap body 217a has a light shielding property so that the liquid stored in the bag 212 does not change chemically. The bush 217b has corrosion resistance so that it does not corrode even if it touches the liquid stored in the bag 212.

  As shown in FIG. 24, a portion on one end side of the bush 217b is press-fitted into the cap body 217a. The portion on the other end side of the bush 217b protrudes into the cap body 217a. An O-ring 271 is supported on the distal end surface of the portion on the other end side of the bush 217b. The O-ring 271 is in close contact with the surface of the flange portion 215a and suppresses the outflow of both liquid and gas from the fluid passage 215b.

  As shown in FIGS. 22 and 24, on the side periphery of the cap body 217a, when the screwing with the lid 216 is released, the liquid in the liquid discharge tube 215 becomes the first opening 211b, the second opening 214d, and the third opening, respectively. A plurality of air holes 272 that escapes from the mouth 213a through the opening 215c are formed. By forming the air holes 272 on the side periphery of the cap body 217a, when the cap 217 is loosened, the close contact between the O-ring 271 and the surface of the flange portion 215a is released, and at least in the plurality of third openings 215c. The gas is discharged from the vent hole 272 to the outside. Thereby, it can suppress that the liquid in the liquid discharge tube 215 ejects.

  As shown in FIG. 22, when the cap 217 is removed, the gas in the outer container 213 and the gas in the bag 212 are first opened before the liquid in the liquid discharge tube 215 is discharged to the mouth 213a. Escape out of the mouth 213a through 211b, the second opening 214d and the third opening 215c. Therefore, it is possible to prevent the liquid in the liquid discharge tube 215 from being discharged out of the mouth portion 213a.

  In the container 200, the gas in the liquid discharge tube 215, the gas in the outer container 213, and the gas in the bag 212 are individually sealed with a cap 217. When the cap 217 is removed, the pressure in the liquid discharge tube 215, the pressure in the outer container 213, and the pressure in the bag 212 immediately coincide with the atmospheric pressure. Therefore, it is possible to prevent the liquid in the liquid discharge tube 215 from being discharged out of the mouth portion 213a.

  As shown in FIG. 23, the tube 251 is joined to the liquid discharge tube 215 on the way from one end side having the flange portion 215a to the other end side. For example, the liquid discharge tube 215 and the tube 251 are thermally welded by ultrasonic vibration.

  The container 200 can distribute the liquid in the container 200 by removing the cap 217 and connecting a dispenser (not shown). The container 200 can realize a so-called quick connector that can connect the dispenser with one touch without using a breakable seal.

(Second embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG.
FIG. 25 is a diagram showing a configuration of a collection apparatus 90A according to the second embodiment of the present invention.
The second embodiment is particularly different from the first embodiment in that a plurality (two in this embodiment) of exhaust pressure adjusting portions are provided in the connection portion. In FIG. 25, the same components as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 25, the recovery device 90A includes a suction part 91, a first connection part 96A, a second connection part 96B, a first exhaust pressure adjustment part 92A, a second exhaust pressure adjustment part 92B, a flow part 93, and a temperature adjustment. A portion 94, a connection portion 97a, a filter 98, a connection portion 97b, a silencer 99, a connection portion 97c, and a storage portion 95 are provided.

  Each of the first connection portion 96A and the second connection portion 96B connects the suction portion 91 and the flow portion 93 so that the gas flows. The first connection portion 96A is provided with a first exhaust pressure adjusting portion 92A. A second exhaust pressure adjustment unit 92B is provided in the second connection unit 96B.

  Each of the first exhaust pressure adjusting unit 92A and the second exhaust pressure adjusting unit 92B reduces the exhaust pressure of the suction pressure by the suction unit 91. The first exhaust pressure adjustment unit 92A includes a first adjustment valve 92a1, a first exhaust pressure detection unit 92b1, and a first opening / closing control unit 92c1. The second exhaust pressure adjustment unit 92B includes a second adjustment valve 92a2, a second exhaust pressure detection unit 92b2, and a second opening / closing control unit 92c2.

  Each of the first adjustment valve 92a1 and the second adjustment valve 92a2 is opened when the exhaust pressure exceeds a predetermined pressure. Each of the first exhaust pressure detection unit 92b1 and the second exhaust pressure detection unit 92b2 detects information regarding the exhaust pressure.

  The first opening / closing control unit 92c1 controls the opening / closing of the first adjustment valve 92a1 based on the detection result by the first exhaust pressure detection unit 92b1. The second opening / closing control unit 92c2 controls the opening / closing of the second adjustment valve 92a2 based on the detection result by the second exhaust pressure detection unit 92b2.

  As described above, according to the present embodiment, the first exhaust pressure adjusting unit 92A and the second exhaust pressure adjusting unit 92B can reduce the suction pressure exhaust pressure by the suction unit 91 in two places. Therefore, it can suppress reliably that a big load is applied to a suction part. Therefore, the suction part can be sufficiently protected.

  In the present embodiment, the configuration in which the two exhaust pressure adjusting parts are provided in the connection part has been described as an example, but the present invention is not limited to this. For example, three or more exhaust pressure adjusting parts may be provided in the connection part.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG.
FIG. 26 is a diagram showing a configuration of a collection device 90B according to the third embodiment of the present invention.
The third embodiment is particularly different from the first embodiment in that the liquid material circulation unit 100 is further provided. In FIG. 26, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 26, the liquid circulation unit 100 includes a storage unit 95 in a liquid supply unit (liquid supply source) 33 provided in an application unit (application device) CT that applies a liquid to the substrate S. The liquid material stored in (storage tank 95a) is returned.

  The liquid circulation unit 100 includes a drive unit 101 and a connecting pipe 102. The connection pipe 102 connects the storage tank 95a and the liquid material supply unit 33. The drive unit 101 circulates the liquid material through the connection pipe 102. The drive unit 101 is configured to flow the liquid material stored in the storage tank 95 a toward the liquid material supply unit 33.

  As described above, according to the present embodiment, since the liquid material collected by the liquid material circulation unit 100 is returned to the liquid material supply unit 33 of the coating unit CT, the collected liquid material can be reused as the coating liquid. Can do.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment, in the adjustment of the concentration of hydrogen sulfide gas and hydrogen selenide gas in the heating chamber 70 (in the baking chamber 80), the control unit CONT determines that the heating chamber has a detection result lower than the first threshold value. Although the operation of increasing the supply amount of hydrogen sulfide gas and hydrogen selenide gas supplied into 70 has been described as an example, it is not limited thereto.

  FIG. 27 is a diagram showing one step of the firing process. As illustrated in FIG. 27, the control unit CONT may supply a solid containing sulfur and selenium alone into the heating chamber 70 using the solid supply unit 89 (supply step). In this case, sulfur and selenium contained in the solid supplied to the inside of the heating chamber 70 are sublimated by the heat in the heating chamber 70 and contribute to improvement of the sulfur element concentration and the selenium element concentration in the atmosphere.

  Further, for example, in the above-described embodiment, the configuration in which the gas concentration detection units SR1 and SR2 are arranged inside the heating chamber 70 is described as an example, but the configuration is not limited thereto. For example, a configuration in which a gas at a predetermined position in the heating chamber 70 is exhausted to the outside of the heating chamber 70 and the concentration of hydrogen sulfide or hydrogen selenide contained in the exhausted gas may be detected.

  For example, in the above-described embodiment, the configuration in which the gas concentration detection units SR1 and SR2 are arranged in the heating chamber 70 arranged in the firing unit BK has been described as an example, but the configuration is not limited thereto. For example, the gas concentration detection unit having the same configuration as the gas concentration detection units SR1 and SR2 may be disposed in the third chamber CB3 that connects the first chamber CB1 and the second chamber CB2. In this case, it is only necessary to detect the concentration of hydrogen sulfide gas and hydrogen selenide gas in the atmosphere and adjust the concentration during heating by the vacuum drying unit VD.

  For example, the gas concentration detection part of the same configuration as the gas concentration detection parts SR1 and SR2 may be arranged inside the first chamber CB1. When the coating process is performed by the coating unit CT, a gas containing a chalcogen element (eg, hydrogen sulfide gas, hydrogen selenide gas, etc.) may be generated. Therefore, it is desirable to detect changes in the environment around the substrate even during the coating process.

  In this case, in the gas concentration detection unit, the substrate S is accommodated in the first chamber CB1 (first accommodation step), and the liquid material is applied to the substrate S by the application unit CT (first processing step). , It is possible to detect (detection step) the concentration of hydrogen sulfide gas and hydrogen selenide gas in the atmosphere during the coating process.

  The position of the gas concentration detection unit can be set to, for example, a position along the movement path of the nozzle NZ or a position near the exhaust port by providing an exhaust port (not shown). Further, for example, the position of the gas concentration detection unit may be a position between the liquid material supply unit 33 and the waste liquid storage unit 35 or a position on the + X side or the −X side of the nozzle standby unit 44. Moreover, the gas concentration detection part may be arrange | positioned on the exterior (for example, outer wall) of 1st chamber CB1.

  The gas concentration detection unit may be provided in at least one of the first chamber CB1, the second chamber CB2 (heating chamber 70), and the third chamber CB3. In this case, the concentration of hydrogen sulfide gas and hydrogen selenide gas in the atmosphere can be detected (detection step) during at least one of the coating process, the reduced pressure drying process, and the heating process, and the concentration can be adjusted. It can be performed.

  Moreover, in the said embodiment, although the structure which performs baking operation in the baking part BK of 2nd chamber CB2 was mentioned as an example, it demonstrated, It is not restricted to this. For example, as shown in FIG. 28, a fourth chamber CB4 may be separately provided at a position different from the second chamber CB2, and the substrate S may be heated by the heating unit HT provided in the fourth chamber CB4. Absent.

  In this case, for example, after the coating film F is laminated on the substrate S, a heating process (second heating step) for firing the laminated coating film F is performed in the heating unit HT of the fourth chamber CB4. be able to. In the heat treatment in the second heating step, the coating film F is heated at a higher heating temperature than the heat treatment by the baking part BK. By this heat treatment, the solid content (metal component) of the laminated coating film F can be crystallized, so that the film quality of the coating film F can be further improved.

  In addition, you may make it perform the heating after laminating | stacking the coating film F on the board | substrate S in the baking part BK of 2nd chamber CB2. In this case, in the baking part BK, what is necessary is just to control so that the heating temperature at the time of baking the coating film F after laminating becomes higher than the heating temperature at the time of baking each layer of the coating film F.

  Here, it can be set as the structure by which gas concentration detection part SR3 of the same structure as gas concentration detection part SR1, SR2 as described in the said embodiment was provided in 4th chamber CB4. In this case, the concentration of hydrogen sulfide and hydrogen selenide can be detected by the gas concentration detector SR3 during heating in the fourth chamber CB4. Further, the atmosphere of the fourth chamber CB4 can be adjusted based on the detection result of the gas concentration detector SR3.

  In the above-described embodiment, the elevating mechanism 53a that adjusts the distance between the substrate S and the heating unit 53 in the third chamber CB3 has been described as an example. However, the present invention is not limited thereto. There is no. For example, the elevating mechanism 53a may be configured to move not only the heating unit 53 but also the substrate S in the Z direction. Further, the lifting mechanism 53a may be configured to move only the substrate S in the Z direction.

  In the above-described embodiment, the configuration in which the heating unit 53 is disposed on the −Z side (vertical direction lower side) of the substrate S in the reduced-pressure drying unit VD has been described as an example. However, the present invention is not limited to this. For example, the heating unit 53 may be configured to be disposed on the + Z side (vertical direction upper side) of the substrate S. In addition, a configuration that can move between a position on the −Z side of the substrate S and a position on the + Z side of the substrate S by using the elevating mechanism 53a may be used. In this case, the shape of the heating unit 53 may be a configuration that can pass through a plurality of rollers 57 constituting the substrate transport unit 55 (for example, an opening is provided in the heating unit 53).

  As the configuration of the coating apparatus CTR, for example, as shown in FIG. 29, on the + X side of the substrate supply / recovery unit LU, the first chamber CB1 having the coating unit CT, the connection unit CN having the reduced pressure drying unit VD, and the baking unit BK. The second chamber CB2 having the above may be repeatedly arranged.

  FIG. 29 shows a configuration in which the first chamber CB1, the connection portion CN, and the second chamber CB2 are repeatedly arranged three times. However, the present invention is not limited to this, and the first chamber CB1, the connection portion CN, A configuration in which the second chamber CB2 is repeatedly arranged twice or a configuration in which the first chamber CB1, the connection portion CN, and the second chamber CB2 are repeatedly arranged four times or more may be used.

  According to such a configuration, since the first chamber CB1, the connection portion CN, and the second chamber CB2 are repeatedly provided in series in the X direction, the substrate S may be transported in one direction (+ X direction). Since there is no need to reciprocate S in the X direction, the step of laminating the coating film on the substrate S can be performed continuously. Thereby, a coating film can be efficiently formed on the substrate S.

  The various shapes and combinations of the constituent members shown in the above-described examples are merely examples, and various changes can be made based on design requirements and the like. For example, in the above embodiment, the configuration of the application part CT is a configuration using the slit type nozzle NZ, but is not limited thereto, and for example, a central dropping type application unit may be used. An ink jet type application unit may be used. Further, for example, the liquid material disposed on the substrate S may be applied by being diffused using a squeegee or the like.

  Further, for example, when processing using the coating apparatus CTR is performed, at least one of the chamber apparatuses including the first chamber CB1, the second chamber CB2, the third chamber CB3, and the heating chamber 70 has a predetermined timing during operation. (For example, before carrying the substrate S into the chamber apparatus, after carrying it out, before discharging the liquid material Q by the nozzle NZ, after discharging, before heating by the heating unit 53, after heating, the first heating plate 83 and the second heating plate 84. Before and after heating, including before and after processing in each chamber) or during non-operation, maintenance processing and the surrounding or internal state of the chamber apparatus as necessary (for example, initial state, predetermined atmosphere) (Such as moving the structure, cleaning, adjusting the atmosphere, adjusting the temperature, etc.) It may be carried out.

  Moreover, when performing the said maintenance process, each process for setting it to the said predetermined state, etc., you may perform the washing | cleaning using a washing | cleaning liquid etc., for example, respond | correspond to these. Using the configuration, at least one gas or other types of gases such as nitrogen gas, oxygen gas, argon gas, air, and water vapor may be appropriately supplied around or inside each chamber apparatus. Moreover, you may make it operate | move a conveyance system (for example, a roller, an arm, etc.) suitably as needed.

  Moreover, in the said embodiment, when the coating device CTR is the structure accommodated in one room, the structure provided with the gas supply / discharge part which adjusts the atmosphere of the said room may be sufficient. In this case, hydrazine and the like in the room atmosphere can be discharged using the gas supply / discharge unit, so that the atmosphere in the entire room can be cleaned and the change in the coating environment can be more reliably suppressed. Can do.

  In addition, each component described as embodiment or its modification in the above can be suitably combined in the range which does not deviate from the meaning of this invention, and some components are combined among several combined components. It is also possible not to use as appropriate.

  CTR: coating apparatus (substrate processing apparatus) S: substrate CT: coating section (coating apparatus) VD: reduced pressure drying section (pressure adjusting apparatus) Q: liquid F: coating film 33 ... liquid supply section (liquid supply source) 50a ... Processing chamber (accommodating chamber) 90 ... Recovery device 91 ... Suction unit 92 ... Exhaust pressure adjusting unit 92A ... First exhaust pressure adjusting unit (exhaust pressure adjusting unit) 92B ... Second exhaust pressure adjusting unit (exhaust pressure adjusting unit) 92a ... Adjusting valve 92b ... Exhaust pressure detection unit 92c ... Opening / closing control unit 93 ... Flowing unit 94 ... Temperature adjusting unit 94a ... Refrigerant flow pipe 94b ... Refrigerant driving unit 95 ... Reserving unit 95b ... Storage amount detecting unit 95c ... Discharge control unit 96 ... Connection part 100 ... Liquid state circulation part

Claims (12)

One of the liquid materials vaporized in the pressure adjusting device is connected to the storage chamber of a pressure adjusting device that has a containing chamber for containing a substrate on which a coating film of the liquid material is formed and adjusts the pressure around the substrate. A recovery device for recovering a part,
A suction part for sucking the gas in the storage chamber;
An exhaust pressure adjusting unit that reduces the exhaust pressure of the suction pressure by the suction unit;
A flow part for passing the gas in the storage chamber sucked by the suction part;
A temperature adjusting unit that adjusts the temperature of the gas flowing through the flow unit so that the vaporized liquid contained in the gas is liquefied;
And a storage unit that stores the liquid material liquefied by the temperature adjustment unit. The recovery device according to claim 1, wherein the exhaust pressure adjustment unit includes an adjustment valve that is opened when the exhaust pressure exceeds a predetermined pressure. The exhaust pressure adjusting unit is
An exhaust pressure detector for detecting information on the exhaust pressure;
The recovery device according to claim 2, further comprising: an open / close control unit that controls opening / closing of the regulating valve based on a detection result by the exhaust pressure detection unit. The recovery device according to claim 3, wherein the information includes at least one of a magnitude of the exhaust pressure and a timing at which the suction pressure is generated. A connection part for connecting between the suction part and the circulation part so that the gas flows;
The recovery device according to any one of claims 2 to 4, wherein a plurality of the exhaust pressure adjusting units are provided in the connection unit. The collection device according to any one of claims 1 to 5, wherein the flow part is formed in a straight tube shape. The temperature adjustment unit is
A refrigerant circulation pipe arranged along the circulation part and capable of circulating a refrigerant;
A refrigerant drive section for circulating the refrigerant through the refrigerant distribution pipe;
The recovery device according to claim 6. The recovery device according to claim 7, wherein the refrigerant driving unit is configured to flow the refrigerant in a direction opposite to a flow direction of the gas flowing through the flow unit. The collection device according to any one of claims 1 to 8, wherein the storage unit includes a storage amount detection unit that detects an amount of the stored liquid material. The collection device according to claim 9, wherein the storage unit includes a discharge control unit that discharges the liquid material according to a detection result of the storage amount detection unit. The liquid material circulation part which returns the said liquid material stored in the said storage part to the supply source of the said liquid material provided in the coating device which apply | coats the said liquid material to the said board | substrate is further provided of Claim 1-10 The collection | recovery apparatus as described in any one of them. A pressure adjusting device for adjusting a pressure around the substrate having a storage chamber for storing a substrate on which a coating film of a liquid material is formed; and vaporization in the pressure adjusting device connected to the storage chamber of the pressure adjusting device A substrate processing apparatus provided with a recovery device for recovering a part of the liquid material,
The substrate processing apparatus, wherein the recovery apparatus is a recovery apparatus according to any one of claims 1 to 11.

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