JP2015131279A - Coating equipment, and coating method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide coating equipment and a coating method capable of coating a liquid body to a base plate without any irregularity.SOLUTION: Coating equipment comprises: a coating part having a nozzle for discharging a liquid body containing a metal from a discharge part disposed at a tip part; a relative drive part for moving the tip part and the nozzle relative to each other while opposing the tip part and the base plate; and a coating layer covering at least the tip part of the nozzle and formed such that the compatibility with the liquid body is weaker than the compatibility between the liquid bodies.

Description

  The present invention relates to a coating apparatus and a coating method.

  CIGS type using a semiconductor material containing a metal such as Cu, Ge, Sn, Pb, Sb, Bi, Ga, In, Zn and combinations thereof and an elemental chalcogen such as S, Se, Te, and combinations thereof Solar cells and CZTS solar cells are attracting attention as solar cells having high conversion efficiency (see, for example, Patent Documents 1 to 3). For example, a CZTS solar cell has a structure using a film made of four kinds of semiconductor materials of Cu, Zn, Sn, and Se as a light absorption layer (photoelectric conversion layer).

  Since this CZTS solar cell can reduce the thickness of the light absorption layer as compared with a conventional solar cell, it can be easily installed and transported on a curved surface. For this reason, application to a wide field is expected as a high-performance and flexible solar cell. As a method for forming the light absorption layer, conventionally, for example, a method using a vapor deposition method, a sputtering method, or the like has been known (see, for example, Patent Documents 2 to 5).

Japanese Patent Laid-Open No. 11-340482 JP 2005-51224 A Special table 2009-537997 JP-A-1-231313 Japanese Patent Laid-Open No. 11-273783

  On the other hand, the present inventor, as a method for forming a light absorption layer, discharges a liquid material in which the semiconductor material is dispersed onto a substrate by a nozzle and applies a film of the liquid material on the substrate. suggest. When the light absorption layer is formed by applying a liquid material, it is required to apply the liquid material uniformly on the substrate so that the film thickness of the liquid material formed on the substrate is uniform.

  In view of the circumstances as described above, an object of the present invention is to provide a coating apparatus and a coating method capable of coating a liquid material uniformly on a substrate.

  A coating apparatus according to an aspect of the present invention includes a coating unit having a nozzle that discharges a liquid containing metal from a discharge unit provided at a tip portion, and the substrate in a state where the tip portion and the substrate face each other. A coating that is formed so as to cover at least the tip portion of the nozzle and move relative to the nozzle and the affinity between the liquid material and the affinity between the liquid materials is weaker than the affinity between the liquid materials. And a layer.

According to this configuration, the coating layer is formed at least at the tip of the nozzle so that the affinity between the liquid materials is weaker than the affinity between the liquid materials. It is possible to prevent the liquid material from adhering to the tip portion of the nozzle. Thereby, the liquid material is easily fixed on the substrate. Therefore, the liquid material can be applied uniformly on the substrate.
In particular, when the nozzle is configured to discharge a liquid containing metal, the metal may stick when the liquid containing metal adheres to the tip of the nozzle. It is not easy to scrape off this fixed matter. However, according to this configuration, since the liquid containing metal is suppressed from adhering to the tip portion of the nozzle, it is possible to suppress the occurrence of a metal sticking matter at the tip portion of the nozzle.

Said coating apparatus WHEREIN: The said coating layer may be provided in the part containing the said front-end | tip part and the part adjacent to the said front-end | tip part among the said nozzles.
According to this configuration, it is possible to suppress the liquid material from being transmitted from the tip portion of the nozzle to a portion adjacent to the tip portion.

In the coating apparatus, the liquid includes a solvent that disperses the metal, and the coating layer is formed so that the affinity between the liquid and the solvent is weaker than the affinity between the solvents. Also good.
According to this structure, it can suppress that the liquid body containing the solvent discharged from the discharge part of a nozzle adheres to the front-end | tip part of a nozzle. Thereby, the liquid containing the solvent is easily fixed on the substrate. Therefore, the liquid material can be applied uniformly on the substrate.

In the coating apparatus, the coating layer may be formed so that the affinity between the solvent and the solvent is weaker than the affinity between the solvent and the substrate.
According to this configuration, the liquid containing the solvent is more easily fixed to the substrate than the coating layer at the tip portion of the nozzle. Therefore, the liquid material can be applied uniformly on the substrate.

In the coating apparatus, the coating layer may be formed using a hard carbon film.
According to this configuration, the liquid does not easily adhere to the coating layer, and thus the liquid can be easily fixed on the substrate. Therefore, the liquid material can be applied uniformly on the substrate.

In the coating apparatus, at least the tip portion may be formed using titanium.
According to this configuration, since the affinity between at least the tip portion of the nozzle and the liquid material is weaker than the affinity between the liquid materials, the liquid material discharged from the discharge portion of the nozzle adheres to the tip portion of the nozzle. Can be suppressed. Thereby, the liquid material is easily fixed on the substrate. Therefore, the liquid material can be applied uniformly on the substrate.

In the coating apparatus, the substrate may be formed using molybdenum.
According to this configuration, since the liquid material is easily fixed on the substrate, the liquid material can be uniformly applied on the substrate.

The coating apparatus may further include a chamber surrounding at least one of a coating space where the liquid material is applied by the coating unit and a post-application movement space of the substrate where the liquid material is applied.
According to this configuration, since the space in which the liquid material is disposed is surrounded by the chamber, the deterioration of the liquid material can be suppressed.

The coating apparatus may further include an inert gas supply unit that supplies an inert gas to the space surrounded by the chamber.
According to this configuration, since the inert gas is supplied to the space surrounded by the chamber, the deterioration of the liquid material can be more reliably suppressed in the space surrounded by the chamber.

In the coating apparatus, the discharge unit is formed so as to discharge the liquid material to a discharge region facing the tip portion, and the relative driving unit passes the substrate so as to pass through the discharge region. You may have the board | substrate drive part to drive.
According to this configuration, by moving only the substrate in a state where the nozzle is disposed at a fixed position, the liquid material can be applied onto the substrate without any unevenness.

In the coating apparatus, the discharge unit is formed to discharge the liquid material to a discharge region facing the tip portion, and the relative driving unit is configured so that the discharge region scans the substrate. A nozzle driving unit that drives the nozzle may be included.
According to this configuration, by moving only the nozzle with the substrate placed at a fixed position, it is possible to apply the liquid material onto the substrate without any unevenness.
Further, the relative drive unit may include both the substrate drive unit and the nozzle drive unit. In this case, as relative driving, for example, only the substrate is moved, only the nozzle is moved, or both the substrate and the nozzle are moved.

  The coating method according to the second aspect of the present invention is a coating method in which a metal-containing liquid material is applied to a substrate, and the affinity between the liquid materials is weaker than the affinity between the liquid materials. A step of making the tip portion of the coating portion having a nozzle for discharging the liquid material from the discharge portion formed at the tip portion covered with the coating layer formed as described above facing the substrate, the tip portion and the substrate The step of discharging the liquid material from the discharge portion so that the liquid material is sandwiched between the discharge portion and the discharge portion in a state where the liquid material is sandwiched between the tip portion and the substrate. And relatively moving the tip portion and the substrate while discharging the liquid material.

  According to this method, the tip portion on which the coating layer is formed is opposed to the substrate so that the affinity between the liquid materials is weaker than the affinity between the liquid materials, and the liquid is between the tip portion and the substrate. By discharging the liquid material from the discharge unit so that the body is sandwiched, the liquid material is not easily attached to the tip portion, and the liquid materials are easily in contact with each other. In this state, when the tip portion and the substrate are moved relative to each other while discharging the liquid material from the discharge portion, the liquid materials arranged on the substrate try to contact each other on the substrate. It will be easier to fix to the substrate without flowing through. Therefore, the liquid material can be applied uniformly on the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the coating device and the coating method which can apply | coat a liquid material on a board | substrate uniformly are provided.

It is a top view which shows the whole structure of the coating device which concerns on one Embodiment of this invention. It is a side view which shows the whole structure of the coating device which concerns on this embodiment. It is a figure which shows the structure of the nozzle which concerns on this embodiment. It is a figure which shows a structure when the nozzle which concerns on this embodiment is seen from the -Z side. It is a figure which shows the cross-sectional shape of the nozzle which concerns on this embodiment, and a nozzle front-end | tip management part. It is a figure which shows the structure of the reduced pressure drying part which concerns on this embodiment. It is sectional drawing which shows the structure of the heating chamber which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the coating process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the vacuum drying process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on this embodiment. It is a figure which shows the process of the baking process of the coating device which concerns on a modification. It is a top view which shows the whole structure of the coating device which concerns on a modification. It is a schematic diagram which shows the whole structure of the coating device which concerns on a modification.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view showing an overall configuration of a coating apparatus CTR according to the present embodiment. FIG. 2 is a side view showing the overall configuration of the coating apparatus CTR according to the present embodiment.
As shown in FIGS. 1 and 2, the coating apparatus CTR is an apparatus that applies a liquid material to the substrate S. The coating apparatus CTR includes a substrate supply / recovery unit LU, a first chamber CB1, a second chamber CB2, a connection unit CN, and a control unit CONT. The first chamber CB1 has a coating processing part CT. The second chamber CB2 has a firing part BK. The connection part CN has a reduced pressure drying part VD.

  The coating device CTR is used by being placed on a floor surface FL such as a factory. The coating apparatus CTR may be configured to be accommodated in one room, or may be configured to be accommodated in a plurality of rooms. In the coating apparatus CTR, a substrate supply / recovery unit LU, a coating processing unit CT, a vacuum drying unit VD, and a baking unit BK are arranged in one direction in this order.

  As for the apparatus configuration, the coating apparatus CTR is not limited to the substrate supply / recovery unit LU, the coating processing unit CT, the vacuum drying unit VD, and the baking unit BK arranged in this order in this order. For example, the substrate supply / recovery unit LU may be divided into a substrate supply unit (not shown) and a substrate recovery unit (not shown). Of course, the substrate supply / recovery unit LU, the coating processing unit CT, the vacuum drying unit VD, and the baking unit BK may not be arranged side by side in one direction. The structure arrange | positioned at right and left may be sufficient.

  In each of the following drawings, in describing the configuration of the coating apparatus CTR according to the present embodiment, for simplicity of description, directions in the drawing will be described using an XYZ coordinate system. In the XYZ coordinate system, a plane parallel to the floor is defined as an XY plane. In this XY plane, the direction in which each component (substrate supply / recovery unit LU, coating processing unit CT, reduced pressure drying unit VD, and baking unit BK) of the coating apparatus CTR is arranged is denoted as the X direction, and the X direction on the XY plane. The direction orthogonal to is denoted as the Y direction. The direction perpendicular to the XY plane is denoted as the Z direction. In each of the X direction, the Y direction, and the Z direction, the direction of the arrow in the figure is the + direction, and the direction opposite to the arrow direction is the − direction.

  In the present embodiment, a plate-like member formed using a metal such as molybdenum is used as the substrate S. The substrate S is not limited to this, and a plate-like member made of, for example, glass or resin may be used.

  In the present embodiment, the substrate S will be described by taking a substrate having dimensions of 330 mm × 330 mm as viewed in the Z direction as an example. In addition, about the dimension of the board | substrate S, it is not restricted to the above 330 mm * 330 mm board | substrates. For example, as the substrate S, a substrate having a size of 125 mm × 125 mm may be used, or a substrate having a size of 1 m × 1 m may be used. Of course, a substrate having a size larger or smaller than the above size can be used as appropriate.

  In this embodiment, as a liquid applied to the substrate S, for example, a predetermined solvent may be copper (Cu), indium (In), gallium (Ga), selenium (Se) or copper (Cu), zinc (Zn), A liquid composition containing a metal such as tin (Sn) or selenium (Se) is used. This liquid composition contains the metal material which comprises the light absorption layer (photoelectric converting layer) of a CIGS or a CZTS type solar cell.

  In the present embodiment, the liquid composition contains a substance for ensuring the grain size of the light absorption layer of the CIGS or CZTS solar cell. Of course, as the liquid material, a liquid material in which other metals, for example, metal nanoparticles are dispersed may be used.

(Substrate supply and recovery unit)
The substrate supply / recovery unit LU supplies the unprocessed substrate S to the coating processing unit CT and collects the processed substrate S from the coating processing unit CT. The substrate supply / recovery unit LU has a chamber 10. The chamber 10 is formed in a rectangular parallelepiped box shape. Inside the chamber 10, a storage chamber 10a capable of storing the substrate S is formed. The chamber 10 has a first opening 11, a second opening 12 and a lid 14. The first opening 11 and the second opening 12 communicate the storage chamber 10 a with the outside of the chamber 10.

  The first opening 11 is formed on the + Z side surface of the chamber 10. The first opening 11 is formed larger than the dimension of the substrate S as viewed in the Z direction. The substrate S taken out of the chamber 10 and the substrate S accommodated in the accommodation chamber 10 a are taken in and out of the substrate supply / recovery unit LU through the first opening 11.

  The second opening 12 is formed on the surface of the chamber 10 on the + X side. The second opening 12 is formed larger than the dimension of the substrate S when viewed in the X direction. The substrate S supplied to the coating processing unit CT and the substrate S returned from the coating processing unit CT are taken in and out of the substrate supply / recovery unit LU through the second opening 12.

  The lid 14 opens or closes the first opening 11. The lid portion 14 is formed in a rectangular plate shape. The lid portion 14 is attached to the + X side of the first opening portion 11 via a hinge portion (not shown). For this reason, the lid portion 14 rotates around the Y axis around the + X side of the first opening 11. The first opening 11 can be opened and closed by rotating the lid 14 around the Y axis.

  A substrate transport unit 15 is provided in the storage chamber 10a. The substrate transport unit 15 has a plurality of rollers 17. A pair of rollers 17 is arranged in the Y direction, and a plurality of the pair of rollers 17 are arranged in the X direction.

  Each roller 17 is provided to be rotatable around the Y axis with the Y axis direction as the central axis direction. The plurality of rollers 17 are formed to have the same diameter, and the + Z side ends of the plurality of rollers 17 are disposed on the same plane parallel to the XY plane. Therefore, the plurality of rollers 17 can support the substrate S so that the substrate S is in a posture parallel to the XY plane.

  The rotation of each roller 17 is controlled by a roller rotation control unit (not shown), for example. The substrate transport unit 15 rotates the rollers 17 around the Y axis clockwise or counterclockwise with the plurality of rollers 17 supporting the substrate S, thereby causing the substrate S to move in the X direction (+ X direction or −X direction). ). As the substrate transport unit 15, a floating transport unit (not shown) that lifts and transports a substrate may be used.

(First chamber)
The first chamber CB1 is disposed on a base BC placed on the floor surface FL. The first chamber CB1 is formed in a rectangular parallelepiped box shape. A processing chamber 20a is formed in the first chamber CB1. The coating processing unit CT is provided in the processing chamber 20a. The coating processing unit CT performs a liquid material coating process on the substrate S.

  The first chamber CB1 corresponds to the chamber described in the claims. The first chamber CB1 surrounds a coating space K1 where the liquid material is applied by the coating unit 31.

  The first chamber CB1 has a first opening 21 and a second opening 22. The first opening 21 and the second opening 22 communicate the processing chamber 20a with the outside of the first chamber CB1. The first opening 21 is formed on the −X side surface of the first chamber CB1. The second opening 22 is formed on the surface on the + X side of the first chamber CB1. The first opening 21 and the second opening 22 are formed to dimensions that allow the substrate S to pass through. The substrate S is taken in and out of the first chamber CB1 through the first opening 21 and the second opening 22.

  The coating processing unit CT includes a coating unit 31, a processing stage 28, a nozzle driving unit NA, a maintenance unit 32, a liquid material supply unit 33, a cleaning liquid supply unit 34, a waste liquid storage unit 35, a gas supply / discharge unit 37, and a substrate transport unit 25 ( Substrate driving unit).

The application unit 31 has a nozzle NZ.
FIG. 3 is a diagram illustrating a configuration of the nozzle NZ.
As shown in FIG. 3, the nozzle NZ is formed in a long shape, and is arranged so that the longitudinal direction is parallel to the X direction. The nozzle NZ has a main body NZa and a protrusion NZb. The main body NZa is a housing that can accommodate a liquid material therein. The main body NZa is formed using a material containing, for example, titanium or a titanium alloy. The protruding portion NZb is formed to protrude to the + X side and the −X side with respect to the main body portion NZa. The protruding part NZb is held in a part of the nozzle driving part NA.

FIG. 4 is a diagram illustrating a configuration when the nozzle NZ is viewed from the −Z side.
As shown in FIG. 4, the nozzle NZ has a discharge port OP (discharge portion) at an end portion (tip portion TP) on the −Z side of the main body portion NZa. The discharge port OP is an opening through which the liquid material is discharged. The discharge port OP is formed in a slit shape so as to be long in the X direction. For example, the discharge port OP is formed so that the longitudinal direction thereof is substantially the same as the dimension of the substrate S in the X direction. The discharge port OP is formed so as to discharge the liquid material to a discharge region facing the tip portion TP of the nozzle NZ.

  The nozzle NZ discharges a liquid material Q (see FIG. 12) in which, for example, the above four metals of Cu, In, Ga, and Se are mixed at a predetermined composition ratio. The nozzles NZ are each connected to the liquid material supply unit 33 via connection piping (not shown). The nozzle NZ has a holding part for holding the liquid material therein. In addition, the temperature control part which adjusts the temperature of the liquid body hold | maintained at the said holding | maintenance part may be arrange | positioned.

FIG. 5 is a diagram showing a cross-sectional shape of the nozzle NZ. In FIG. 5, for convenience, a cross-sectional shape of a nozzle tip management unit 45 described later is also illustrated.
As shown in FIG. 5, the nozzle NZ is tapered so that the dimension in the Y direction gradually decreases from the substantially central portion in the Z direction to the tip portion TP toward the central portion in the Y direction.

  In the present embodiment, the coating layer NZf is formed so as to cover the tip portion TP of the nozzle NZ. The coating layer NZf is formed using a hard carbide film (also called diamond-like carbon: DLC). The hard carbonized film has a property that the affinity with the liquid Q having the above composition is weaker than the affinity between the liquids Q. More specifically, the hard carbonized film has a property that the affinity with the solvent contained in the liquid Q is weaker than the affinity between the solvents. For this reason, it becomes difficult for the liquid Q to adhere to the coating layer NZf formed using the hard carbonized film.

  In the present embodiment, a coating layer NZf formed using a hard carbonized film is provided at the tip portion TP of the nozzle NZ. For this reason, in the front-end | tip part TP of the nozzle NZ, it is comprised so that the affinity between the liquid bodies Q may become weaker than the affinity between the liquid bodies Q.

  Although FIG. 5 shows an example in which the coating layer NZf is formed only on the tip portion TP of the nozzle NZ, this is not restrictive. For example, the coating layer NZf may be formed in an adjacent portion adjacent to the tip portion TP. For example, as shown in FIG. 5, the adjacent portions include inclined portions TSa and TSb respectively connected to the + Y side end side and the −Y side end side of the tip portion TP of the nozzle NZ. Moreover, you may include wall part TSc and TSd respectively connected to the + Z side of inclination part TSa and TSb as an adjacent part. In FIG. 5, the configuration in which the coating layer NZf is expanded from the tip portion TP to a part of the inclined portions TSa and TSb is indicated by a one-dot chain line.

  At least the tip portion TP of the nozzle NZ is formed using a material containing titanium or a titanium alloy. As such a material, for example, at least one kind of material among the materials shown in (1) to (8) shown in Table 1 below is used. Of course, a plurality of materials (1) to (8) may be combined.

  The materials shown in the above (1) to (8) all have the property that the affinity between the liquid bodies Q having the above composition is weaker than the affinity between the liquid bodies Q. More specifically, the materials shown in the above (1) to (8) all have the property that the affinity between the solvent contained in the liquid Q is weaker than the affinity between the solvents. Yes. For this reason, it is difficult for the liquid Q to adhere to the nozzle NZ formed using the materials shown in the above (1) to (8).

  In the present embodiment, for example, the entire nozzle NZ is formed using at least one of the materials (1) to (8). For this reason, the affinity between the liquid bodies Q is weaker than the affinity between the liquid bodies Q over the entire surface of the nozzle NZ.

  The entire surface of the nozzle NZ includes, for example, a tip portion TP and adjacent portions (inclined portions TSa and TSb, wall portions TSc and TSd) adjacent to the tip portion TP.

  As described above, the nozzle NZ of the present embodiment is configured such that the tip portion TP is covered with the coating layer NZf and the entire surface is formed using at least one of the materials (1) to (8). It is configured so that the liquid Q is less likely to adhere to the entire surface of the NZ, particularly the tip portion TP.

  Furthermore, the affinity between the hard carbonized film and the solvent contained in the liquid material Q has a property that it is weaker than the affinity between molybdenum and the solvent contained in the liquid material Q. In the present embodiment, since the substrate S is formed using molybdenum, the affinity between the hard carbonized film and the solvent contained in the liquid Q is between the substrate S and the solvent contained in the liquid Q. It has the property of being weaker than its affinity.

  Further, the property that the affinity between the material shown in the above (1) to (8) and the solvent contained in the liquid Q is weaker than the affinity between molybdenum and the solvent contained in the liquid Q. There is. Therefore, the affinity between the material shown in the above (1) to (8) and the solvent contained in the liquid Q is weaker than the affinity between the substrate S and the solvent contained in the liquid Q. Will have properties.

  In other words, the liquid material Q is covered with the coating layer NZf whose tip portion TP is formed using a hard carbonized film, and the entire surface is formed using at least one of the materials (1) to (8). Compared to the nozzle NZ, it becomes easier to adhere to the substrate S formed using molybdenum. As described above, the nozzle NZ is configured such that the liquid Q discharged from the discharge port OP is less likely to adhere to the nozzle NZ and more easily adhere to the substrate S.

  Returning to FIG. 1 and FIG. 2, the processing stage 28 places the substrate S to be coated. The surface on the + Z side of the processing stage 28 is a substrate placement surface on which the substrate S is placed. The substrate mounting surface is formed in parallel to the XY plane. The processing stage 28 is formed using, for example, stainless steel.

  The nozzle driving unit NA moves the nozzle NZ in the X direction. Specifically, the nozzle driving unit NA drives the nozzle NZ so that the ejection region facing the tip portion TP (see FIG. 4) of the nozzle NZ scans the substrate S. The nozzle driving unit NA has a stator 40 and a mover 41 that constitute a linear motor mechanism. The nozzle drive unit NA may have a configuration in which another drive mechanism such as a ball screw mechanism is used.

  The stator 40 extends in the Y direction. The stator 40 is supported by the support frame 38. The support frame 38 has a first frame 38a and a second frame 38b. The first frame 38a is disposed at the −Y side end of the processing chamber 20a. The second frame 38b is disposed at a position where the processing stage 28 is sandwiched between the second frame 38b and the first frame 38a in the processing chamber 20a.

  The mover 41 is movable along the extending direction (Y direction) of the stator 40. The mover 41 includes a nozzle support member 42 and an elevating part 43. The nozzle support member 42 is formed in a gate shape and includes a holding portion 42a that holds the protruding portion NZb of the nozzle NZ. The nozzle support member 42 integrally moves in the Y direction between the first frame 38 a and the second frame 38 b along the stator 40 together with the elevating part 43. For this reason, the nozzle NZ held by the nozzle support member 42 moves across the processing stage 28 in the Y direction. The nozzle support member 42 moves in the Z direction along the lifting guide 43 a of the lifting unit 43. The mover 41 has a drive source (not shown) that moves the nozzle support member 42 in the Y direction and the Z direction.

The maintenance unit 32 is a part that performs maintenance of the nozzle NZ. The maintenance unit 32 includes a nozzle standby unit 44 and a nozzle tip management unit 45.
The nozzle standby unit 44 is used when the nozzle NZ is replaced or the liquid material supplied to the nozzle NZ is replaced with a dip portion (not shown) that dip the tip TP so that the tip TP of the nozzle NZ is not dried. A discharge unit (not shown) for discharging the liquid material held in the nozzle NZ.

  The nozzle tip management unit 45 is a part that adjusts the condition of the nozzle tip by washing the tip portion TP and its vicinity of the nozzle NZ and preliminarily discharging from the discharge port OP of the nozzle NZ. The nozzle tip management unit 45 includes a wiping unit 45a for wiping the tip part TP of the nozzle NZ and a guide rail 45b for guiding the wiping unit 45a. The nozzle tip management section 45 is provided with a waste liquid storage section 35a that stores a liquid material discharged from the nozzle NZ, a cleaning liquid used for cleaning the nozzle NZ, and the like.

  As shown in FIG. 5, the wiping portion 45 a is formed in a shape that covers the tip portion TP of the nozzle NZ and a part of the slope on the tip portion TP side in a cross-sectional view.

  As shown in FIGS. 1 and 5, the guide rail 45b extends in the X direction so as to cover the discharge port OP of the nozzle NZ. The wiping portion 45a is provided to be movable in the X direction along the guide rail 45b by a driving source (not shown) or the like. The tip portion TP is wiped by moving in the X direction while the wiping portion 45a is in contact with the tip portion TP of the nozzle NZ.

  The liquid material supply unit 33 includes a first liquid material container 33a and a second liquid material container 33b. A liquid material to be applied to the substrate S is stored in the first liquid material storage portion 33a and the second liquid material storage portion 33b. The first liquid material accommodation part 33a and the second liquid material accommodation part 33b can accommodate different types of liquid materials.

  The cleaning liquid supply unit 34 stores cleaning liquid for cleaning each part of the coating processing unit CT, specifically, the inside of the nozzle NZ, the nozzle tip management unit 45, and the like. The cleaning liquid supply unit 34 is connected to the inside of the nozzle NZ, the nozzle tip management unit 45, and the like via a pipe and a pump (not shown).

  The waste liquid storage unit 35 collects a portion of the liquid discharged from the nozzle NZ that is not reused. The nozzle tip management unit 45 may have a configuration in which a portion that performs preliminary discharge and a portion that cleans the tip portion TP of the nozzle NZ are provided separately. Further, the nozzle standby unit 44 may be configured to perform preliminary discharge.

  The gas supply / discharge part 37 has a gas supply part 37a and an exhaust part 37b. The gas supply unit 37a supplies an inert gas such as nitrogen gas or argon gas to the processing chamber 20a. The exhaust unit 37b sucks the processing chamber 20a and discharges the gas in the processing chamber 20a to the outside of the first chamber CB1.

  The gas supply unit 37a corresponds to the inert gas supply unit described in the claims. The gas supply part 37a supplies an inert gas to the space surrounded by the first chamber CB1.

  The substrate transport unit 25 transports the substrate S in the processing chamber 20a. Specifically, the substrate transport unit 25 drives the substrate S so as to pass through the ejection region facing the tip portion TP (see FIG. 4) of the nozzle NZ. The substrate transport unit 25 has a plurality of rollers 27. The rollers 27 are arranged in two rows so as to cross the central portion in the Y direction of the processing chamber 20a in the X direction. The rollers 27 arranged in each row support the + Y side end side and the −Y side end side of the substrate S, respectively.

  By rotating each roller 27 clockwise or counterclockwise around the Y axis while supporting the substrate S, the substrate S supported by each roller 27 is conveyed in the X direction (+ X direction or −X direction). The In addition, you may use the floating conveyance part not shown which floats and conveys a board | substrate.

  The nozzle drive unit NA and the substrate transport unit 25 described above are included in the relative drive unit described in the claims. The relative driving unit relatively moves the substrate S and the nozzle NZ in a state where the tip portion TP of the nozzle NZ and the substrate S are opposed to each other.

(Connection part)
As shown in FIGS. 1 and 2, the connection portion CN connects the first chamber CB1 and the second chamber CB2. The substrate S moves between the first chamber CB1 and the second chamber CB2 via the connection portion CN. The connection part CN has a third chamber CB3.

  The third chamber CB3 is formed in a rectangular parallelepiped box shape. A processing chamber 50a is formed inside the third chamber CB3. In the present embodiment, the processing chamber 50a is provided with a reduced pressure drying unit VD. The vacuum drying unit VD dries the liquid applied on the substrate S. Gate valves V2 and V3 are provided in the third chamber CB3.

  The third chamber CB3 corresponds to the chamber described in the claims. The third chamber CB3 surrounds the post-application moving space K2 of the substrate S on which the liquid material has been applied by the application unit 31.

  The third chamber CB3 has a first opening 51 and a second opening 52. The first opening 51 and the second opening 52 communicate the processing chamber 50a and the outside of the third chamber CB3. The first opening 51 is formed on the surface on the −X side of the third chamber CB3. The second opening 52 is formed on the surface on the + X side of the third chamber CB3. The 1st opening part 51 and the 2nd opening part 52 are formed in the dimension which the board | substrate S can pass. The substrate S is taken in and out of the third chamber CB3 through the first opening 51 and the second opening 52.

(Vacuum drying part)
FIG. 6 is a diagram illustrating a configuration of the reduced-pressure drying unit VD.
As shown in FIG. 6, the vacuum drying unit VD includes a substrate transport unit 55, a gas supply unit 58, an exhaust unit 59, and a heating unit 53.
The substrate transport unit 55 has a plurality of rollers 57. A pair of rollers 57 are arranged in the Y direction, and a plurality of the pair of rollers 57 are arranged in the X direction. The plurality of rollers 57 support the substrate S disposed in the processing chamber 50 a through the first opening 51.

  By rotating each roller 57 clockwise or counterclockwise around the Y axis while supporting the substrate S, the substrate S supported by each roller 57 is conveyed in the X direction (+ X direction or −X direction). The In addition, you may use the floating conveyance part not shown which floats and conveys a board | substrate.

  The gas supply unit 58 supplies an inert gas such as nitrogen gas or argon gas to the processing chamber 50a. The gas supply unit 58 corresponds to the inert gas supply unit described in the claims. The gas supply unit 58 supplies an inert gas to the space surrounded by the third chamber CB3.

  The gas supply unit 58 includes a first supply unit 58a and a second supply unit 58b. The first supply unit 58a and the second supply unit 58b are connected to a gas supply source 58c such as a gas cylinder or a gas pipe. The supply of gas to the processing chamber 50a is mainly performed using the first supply unit 58a. The second supply unit 58b finely adjusts the gas supply amount by the first supply unit 58a.

  The exhaust part 59 sucks the gas in the processing chamber 50a, discharges the gas in the processing chamber 50a to the outside of the third chamber CB3, and depressurizes the processing chamber 50a. By reducing the pressure in the processing chamber 50a, evaporation of the solvent contained in the liquid material of the substrate S is promoted, and the liquid material is dried. The exhaust part 59 has a first suction part 59a and a second suction part 59b. The first suction part 59a and the second suction part 59b are connected to suction sources 59c and 59d such as a pump. Suction from the processing chamber 50a is mainly performed using the first suction part 59a. The second suction part 59b finely adjusts the suction amount by the first suction part 59a.

  The heating unit 53 heats the liquid material on the substrate S disposed in the processing chamber 50a. As the heating unit 53, for example, an infrared device or a hot plate is used. The temperature of the heating unit 53 can be adjusted to, for example, room temperature to about 100 ° C. By using the heating unit 53, evaporation of the solvent contained in the liquid material on the substrate S is promoted, and drying processing under reduced pressure is supported.

  The heating unit 53 is connected to an elevating mechanism 53a. The lifting mechanism 53a moves the heating unit 53 in the Z direction. As the elevating mechanism 53a, for example, a motor mechanism or an air cylinder mechanism is used. The distance between the heating unit 53 and the substrate S can be adjusted by moving the heating unit 53 in the Z direction by the elevating mechanism 53a. The amount of movement of the heating unit 53 and the timing of movement of the heating unit 53 by the elevating mechanism 53a are controlled by the control unit CONT.

(Second chamber)
As shown in FIG.1 and FIG.2, 2nd chamber CB2 is arrange | positioned on the base BB mounted in the floor surface FL. The second chamber CB2 is formed in a rectangular parallelepiped box shape. A processing chamber 60a is formed in the second chamber CB2. The firing part BK is provided in the processing chamber 60a. The firing unit BK fires the coating film applied on the substrate S.

  The second chamber CB2 corresponds to the chamber described in the claims. The second chamber CB2 surrounds the post-application moving space K2 of the substrate S on which the liquid material has been applied by the application unit 31.

  The second chamber CB2 has an opening 61. The opening 61 communicates the processing chamber 60a and the outside of the second chamber CB2. The opening 61 is formed on the surface on the −X side of the second chamber CB2. The opening 61 is formed in a dimension that allows the substrate S to pass therethrough. The substrate S is taken in and out of the second chamber CB2 through the opening 61.

The firing unit BK includes a substrate transport unit 65, a gas supply unit 68, an exhaust unit 69, and a heating chamber 70.
The substrate transport unit 65 includes a plurality of rollers 67 and an arm unit 71. A pair of rollers 67 is arranged in the Y direction, and a plurality of the pair of rollers 67 are arranged in the X direction. The plurality of rollers 67 support the substrate S disposed in the processing chamber 60 a through the opening 61.

  By rotating each roller 67 clockwise or counterclockwise around the Y axis while supporting the substrate S, the substrate S supported by each roller 67 is conveyed in the X direction (+ X direction or −X direction). The In addition, you may use the floating conveyance part not shown which floats and conveys a board | substrate.

  The arm unit 71 and the heating chamber 70 are disposed on a gantry 74. The arm unit 71 delivers the substrate S between the plurality of rollers 67 and the heating chamber 70. The arm unit 71 includes a transfer arm 72 and an arm driving unit 73. The transfer arm 72 has a substrate support part 72a and a moving part 72b. The substrate support part 72a supports the + Y side and −Y side sides of the substrate S. The moving part 72b is connected to the substrate support part 72a, is movable in the X direction, and is rotatable in the θZ direction.

  The arm driving unit 73 drives the moving unit 72b in the X direction or the θZ direction. When the moving unit 72b is moved in the + X direction by the arm driving unit 73, the substrate support unit 72a is inserted into the heating chamber 70, and the substrate S is disposed at the center of the heating chamber 70 as viewed in the Z direction. It is like that.

The gas supply unit 68 supplies an inert gas such as nitrogen gas or argon gas to the processing chamber 60a. The gas supply unit 68 corresponds to the inert gas supply unit described in the claims. The gas supply unit 68 supplies an inert gas to the space surrounded by the second chamber CB2.
The exhaust unit 69 sucks the processing chamber 60a and discharges the gas in the processing chamber 60a to the outside of the second chamber CB2.

FIG. 7 is a cross-sectional view showing the configuration of the heating chamber 70.
As shown in FIG. 7, the heating chamber 70 includes a first accommodating portion 81, a second accommodating portion 82, a first heating plate 83, a second heating plate 84, a lift portion 85, a sealing portion 86, a gas supply portion 87, and An exhaust part 88 is provided.

  The heating chamber 70 corresponds to the chamber described in the claims. The heating chamber 70 surrounds the post-application moving space K2 of the substrate S coated with the liquid material by the application unit 31.

  The first accommodating portion 81 is formed in a rectangular bowl shape when viewed in the Z direction, and is placed on the bottom of the heating chamber 70 so that the opening portion faces the + Z side. The second storage portion 82 is formed in a rectangular bowl shape when viewed in the Z direction, and is disposed so that the opening portion faces the first storage portion 81. The 2nd accommodating part 82 is movable to a Z direction using the raising / lowering mechanism not shown. By overlapping the edge portion 82 a of the second storage portion 82 with the edge portion 81 a of the first storage portion 81, the insides of the first storage portion 81 and the second storage portion 82 are sealed. In this case, the firing chamber 80 sealed by the first storage portion 81, the second storage portion 82, and the sealing portion 86 is formed.

  The first heating plate 83 is accommodated in the first accommodating portion 81. The first heating plate 83 heats the substrate S in a state where the substrate S is placed. The first heating plate 83 is formed using, for example, quartz, and a heating device such as an infrared device or a hot plate is provided inside. The temperature of the first heating plate 83 can be adjusted to about 200 ° C. to 800 ° C., for example. A plurality of through holes 83 a are formed in the first heating plate 83. The through hole 83a penetrates a part of the lift portion 85.

  The second heating plate 84 is accommodated in the second accommodating portion 82. The second heating plate 84 is formed using, for example, a metal material, and a heating device such as an infrared device or a hot plate is provided inside. The temperature of the second heating plate 84 can be adjusted to about 200 ° C. to 800 ° C., for example. The second heating plate 84 is provided so as to be movable in the Z direction separately from the second accommodating portion 82 by a lifting mechanism (not shown). The distance between the second heating plate 84 and the substrate S can be adjusted by moving the second heating plate 84 in the Z direction.

  The lift unit 85 moves the substrate S between the arm unit 71 (see FIGS. 1 and 2) and the first heating plate 83. The lift portion 85 includes a plurality of support pins 85a and a moving portion 85b that holds the support pins 85a and is movable in the Z direction. In order to make the illustration easy to discriminate, FIG. 7 shows a configuration in which two support pins 85a are provided, but in actuality, for example, 16 pieces can be arranged. The plurality of through holes 83a provided in the first heating plate 83 are arranged at positions corresponding to the plurality of support pins 85a in the Z direction view.

  The sealing portion 86 is formed on the edge portion 81 a of the first housing portion 81. As the sealing portion 86, for example, an O-ring formed using a resin material or the like can be used. The sealing portion 86 seals between the first housing portion 81 and the second housing portion 82 in a state where the edge portion 82a of the second housing portion 82 is overlapped with the edge portion 81a of the first housing portion 81. To do. For this reason, the inside of the 1st accommodating part 81 and the 2nd accommodating part 82 can be sealed.

  The gas supply unit 87 supplies nitrogen gas or the like to the processing chamber 60a. The gas supply unit 87 is connected to the + Z side surface of the heating chamber 70. The gas supply unit 87 includes a gas supply source 87 a such as a gas cylinder or a gas pipe, and a connection pipe 87 b that connects the gas supply source 87 a and the second storage unit 82. The gas supply source 87a includes a nitrogen gas supply source and a gas source containing a chalcogen element (eg, hydrogen sulfide, hydrogen selenide). Note that the gas supply source 87a may have another gas supply source.

  The gas supply unit 87 corresponds to the inert gas supply unit described in the claims. The gas supply unit 87 supplies an inert gas to the space surrounded by the heating chamber 70.

  The exhaust unit 88 sucks the processing chamber 60 a and discharges the gas in the processing chamber 60 a to the outside of the heating chamber 70. The exhaust unit 88 is connected to the surface on the −Z side of the heating chamber 70. The exhaust unit 88 includes a suction source 88 a such as a pump, and a connection pipe 88 b that connects the suction source 88 a and the first storage unit 81.

  In the present embodiment, gas concentration detectors SR1 and SR2 are provided in the heating chamber 70. The gas concentration detectors SR <b> 1 and SR <b> 2 detect the concentration of the gas containing the chalcogen element in the atmosphere around the substrate accommodated in the heating chamber 70. Moreover, gas concentration detection part SR1, SR2 transmits a detection result to the control part CONT.

  In the present embodiment, the gas concentration detectors SR1 and SR2 can detect a gas containing at least one of sulfur and selenium as a chalcogen element. Examples of such a gas include hydrogen sulfide and hydrogen selenide. Each of the gas concentration detectors SR1 and SR2 has at least one of a sensor that detects hydrogen sulfide and a sensor that detects hydrogen selenide. In addition, the gas concentration detection unit SR1 may include a sensor capable of detecting sublimated single sulfur or selenium.

  The gas concentration detection part SR <b> 1 is provided in the ceiling part 82 b of the second accommodation part 82 in the heating chamber 70. The detection surface SRa of the gas concentration detection unit SR1 is directed to the −Z side, and is disposed so as to face the first heating plate 83 on which the substrate S is placed. With this arrangement, the gas concentration detector SR1 is arranged to face the surface of the substrate S on which the liquid material is applied. The gas concentration detection unit SR1 is preferably arranged at a position outside the region that directly receives the gas supplied from the connection pipe 87b of the gas supply unit 87. Therefore, the structure arrange | positioned at the wall part side of the 2nd accommodating part 82 rather than the position shown in FIG. Further, a shielding part (not shown) that shields gas may be disposed between the gas concentration detection part SR1 and the connection pipe 87b.

  Note that the position of the gas concentration detection unit SR1 is not limited to the second storage unit 82 as long as the position is opposed to the surface of the substrate S, and may be arranged at another position. As such other positions, for example, a support member (not shown) is extended from a part of the second accommodating portion 82 to the −Z side of the second heating plate 84, and the gas concentration detection portion is connected to the support member. It is good also as a structure to which SR1 was attached. Moreover, the structure by which gas concentration detection part SR1 is arrange | positioned in parts (for example, wall part etc.) different from the ceiling part 82b of the 2nd accommodating part 82 may be sufficient. In addition, a protection unit (including a heat insulating cover, a cooling mechanism, and the like) that protects the wiring portion connected to the gas concentration detection units SR1 and SR2 from heat may be provided.

  On the other hand, the gas concentration detection part SR <b> 2 is provided in the bottom part 81 b of the first housing part 81 in the heating chamber 70. The gas concentration detection unit SR2 is disposed in the vicinity of the connection pipe 88b of the exhaust unit 88. The detection surface SRb of the gas concentration detector SR2 is directed to the + Z side. The gas concentration detector SR2 may have a configuration provided inside the connection pipe 88b.

  In the present embodiment, a solid supply unit 89 is provided in the heating chamber 70. The solid supply unit 89 supplies a solid containing a chalcogen element into the heating chamber 70. Examples of such chalcogen elements include sulfur and selenium solids. In FIG. 7, as an example, a configuration in which the solid supply unit 89 supplies the solid from the side portion of the first storage unit 81 to the bottom portion 81 b is shown, but the configuration is not limited thereto. For example, the solid may be supplied into the heating chamber 70 from the ceiling portion 82b side of the second housing portion 82. In addition, a solid arrangement portion (such as a trapezoidal shape or a shelf shape) for arranging a solid is previously formed in at least one of the first accommodation portion 81 and the second accommodation portion 82, and the solid supply portion 89 is provided in the solid arrangement portion. The structure which arrange | positions solid may be sufficient. In addition, a container or a housing part that has an openable / closable lid and accommodates the solid is disposed inside the heating chamber 70, and when the solid is supplied into the heating chamber 70, the lid of the container is opened, When not supplying, it is good also as a structure which closes a lid | cover.

(Substrate transport path)
As shown in FIG. 1, the second opening 12 of the substrate supply / recovery unit LU, the first opening 21 and the second opening 22 of the coating processing unit CT, the first opening 51 and the second opening of the vacuum drying unit VD. The opening part 61 of the part 52 and the firing part BK is provided side by side on a straight line parallel to the X direction. For this reason, the substrate S moves on a straight line in the X direction. In addition, as shown in FIG. 2, the position in the Z direction is maintained in the path from the substrate S to the heating chamber 70 of the baking unit BK from the substrate supply / recovery unit LU. For this reason, stirring of the surrounding gas by the board | substrate S is suppressed.

(Anti-chamber)
As shown in FIG. 1, anti-chambers AL1 to AL3 are connected to the first chamber CB1.
The anti-chambers AL1 to AL3 are provided in communication with the inside and outside of the first chamber CB1. The anti-chambers AL1 to AL3 are paths for taking out the components of the processing chamber 20a to the outside of the first chamber CB1 and for inserting the components into the processing chamber 20a from the outside of the first chamber CB1, respectively.

  The anti-chamber AL1 is connected to the application unit 31. The nozzle NZ provided in the application part 31 can be taken into and out of the processing chamber 20a through the anti-chamber AL1.

  The anti-chamber AL <b> 2 is connected to the liquid material supply unit 33. In the liquid material supply unit 33, the processing chamber 20a can be taken in and out through the anti-chamber AL2.

  The anti-chamber AL3 is connected to the waste liquid reservoir 35. In the waste liquid storage unit 35, the liquid can be taken in and out of the processing chamber 20a through the anti-chamber AL3. The anti-chamber AL3 is formed to have a dimension that allows the substrate S to pass therethrough. For this reason, for example, when performing a trial coating of the liquid material in the coating processing unit CT, it is possible to supply the unprocessed substrate S from the anti-chamber AL3 to the processing chamber 20a. Further, it is possible to take out the substrate S after the trial coating from the anti-chamber AL3. Further, it is possible to take out the substrate S temporarily from the anti-chamber AL3 in an emergency or the like.

The anti-chamber AL4 is connected to the second chamber CB2.
The anti-chamber AL4 is connected to the heating chamber 70. The anti-chamber AL4 is formed to have a dimension that allows the substrate S to pass therethrough. For this reason, for example, when heating the substrate S in the heating chamber 70, the substrate S can be supplied from the anti-chamber AL4 to the processing chamber 60a. In addition, the substrate S after the heat treatment can be taken out from the anti-chamber AL4.

(Glove part)
As shown in FIG. 1, a globe part GX1 is connected to the first chamber CB1. In addition, a glove part GX2 is connected to the second chamber CB2.
The glove parts GX1 and GX2 are parts for the operator to access the first chamber CB1 and the second chamber CB2. When an operator inserts a hand into the glove parts GX1 and GX2, a maintenance operation and the like in the first chamber CB1 and the second chamber CB2 can be performed. The globe parts GX1 and GX2 are formed in a bag shape. The globe parts GX1 and GX2 are arranged at a plurality of locations in the first chamber CB1 and the second chamber CB2, respectively. A sensor or the like for detecting whether or not an operator puts a hand in the globe parts GX1 and GX2 may be arranged in the first chamber CB1 and the second chamber CB2.

(Gate valve)
As shown in FIGS. 1 and 2, a gate valve V1 is provided between the second opening 12 of the substrate supply and recovery unit LU and the first opening 21 of the coating processing unit CT. The gate valve V1 is provided so as to be movable in the Z direction by a driving unit (not shown). By moving the gate valve V1 in the Z direction, the second opening 12 of the substrate supply / recovery unit LU and the first opening 21 of the coating processing unit CT are simultaneously opened or closed. When the second opening 12 and the first opening 21 are simultaneously opened, the substrate S can be moved between the second opening 12 and the first opening 21.

  A gate valve V2 is provided between the second opening 22 of the first chamber CB1 and the first opening 51 of the third chamber CB3. The gate valve V2 is provided so as to be movable in the Z direction by a driving unit (not shown). By moving the gate valve V2 in the Z direction, the second opening 22 of the first chamber CB1 and the first opening 51 of the third chamber CB3 are simultaneously opened or closed. When the second opening 22 and the first opening 51 are simultaneously opened, the substrate S can be moved between the second opening 22 and the first opening 51.

  A gate valve V3 is provided between the second opening 52 of the third chamber CB3 and the opening 61 of the second chamber CB2. The gate valve V3 is provided so as to be movable in the Z direction by a drive unit (not shown). By moving the gate valve V3 in the Z direction, the second opening 52 of the third chamber CB3 and the opening 61 of the second chamber CB2 are simultaneously opened or closed. When the second opening 52 and the opening 61 are simultaneously opened, the substrate S can be moved between the second opening 52 and the opening 61.

(Control part)
The control part CONT is a part that comprehensively controls the coating apparatus CTR. Specifically, the operations in the substrate supply / recovery unit LU, the coating processing unit CT, the vacuum drying unit VD, the baking unit BK, the operations of the gate valves V1 to V3, and the like are controlled. As an example of the adjustment operation, the control unit CONT adjusts the supply amount of the gas supply unit 68 based on the detection results by the gas concentration detection units SR1 and SR2. The control unit CONT has a timer (not shown) used for processing time measurement and the like.

(Application method)
Next, the coating method according to this embodiment will be described. In the present embodiment, a coating film containing metal is formed on the substrate S using the coating apparatus CTR configured as described above. The operation performed in each part of the coating apparatus CTR is controlled by the control part CONT.

  First, the control unit CONT carries the substrate S into the substrate supply / recovery unit LU from the outside. In this case, the control part CONT opens the cover part 14 with the gate valve V <b> 1 closed, and accommodates the substrate S in the accommodation room 10 a of the chamber 10. After the board | substrate S is accommodated in the storage chamber 10a, the control part CONT closes the cover part 14. FIG.

  After the lid part 14 is closed, the control part CONT opens the gate valve V1, and makes the accommodation chamber 10a of the chamber 10 communicate with the processing chamber 20a of the first chamber CB1 of the coating processing part CT. After the gate valve V1 is opened, the control unit CONT uses the substrate transfer unit 15 to transfer the substrate S in the X direction.

  After a part of the substrate S is inserted into the processing chamber 20a of the first chamber CB1, the control unit CONT uses the substrate transport unit 25 to completely carry the substrate S into the processing chamber 20a. After the substrate S is loaded, the control unit CONT closes the gate valve V1. The controller CONT closes the gate valve V1, and then transports the substrate S to the processing stage 28.

  8-13 is a figure which shows the process of the coating process of the coating device CTR which concerns on this embodiment. In FIG. 12, the state in which the liquid material Q is discharged from the discharge port OP of the nozzle NZ to the substrate S is shown in an enlarged manner.

  As shown in FIG. 8, when the substrate S is placed on the processing stage 28, a coating process is performed in the coating processing unit CT. Prior to the coating process, the control unit CONT closes the gate valves V1 and V2, and supplies and sucks inert gas using the gas supply unit 37a and the exhaust unit 37b (see FIGS. 1 and 2). To do.

  By this operation, the atmosphere and pressure in the processing chamber 20a are adjusted. After adjusting the atmosphere and pressure in the processing chamber 20a, the control unit CONT moves the nozzle NZ from the nozzle standby unit 44 to the nozzle tip management unit 45 using the nozzle driving unit NA (not shown in FIG. 8). Thereafter, the control unit CONT continuously performs the adjustment operation of the atmosphere and pressure in the processing chamber 20a during the coating process.

  After the nozzle NZ reaches the nozzle tip management unit 45, the control unit CONT causes the nozzle NZ to perform a preliminary discharge operation as shown in FIG. In the preliminary discharge operation, the control unit CONT discharges the liquid material Q from the discharge port OP. After the preliminary discharge operation, as shown in FIG. 10, the control unit CONT moves the wiping unit 45a in the X direction along the guide rail 45b to wipe the tip portion TP of the nozzle NZ and the inclined portion in the vicinity thereof.

  After wiping the tip portion TP of the nozzle NZ, the control unit CONT moves the nozzle NZ to the processing stage 28. After the discharge port OP of the nozzle NZ reaches the −Y side end of the substrate S, the control unit CONT moves the nozzle NZ in the + Y direction at a predetermined speed and moves the substrate from the discharge port OP as shown in FIG. The liquid material Q is discharged toward S. By this operation, the coating film F of the liquid material Q is formed on the substrate S.

In this case, the control unit CONT moves the nozzle NZ and the substrate S relative to each other so that the tip portion TP of the nozzle NZ faces the substrate S. In the present embodiment, the substrate S is disposed at a fixed position, and only the nozzle NZ is moved in the + Y direction so that the tip portion TP of the nozzle NZ faces the substrate S.
After the front end portion TP and the substrate S are made to face each other, the control unit CONT is liquid between the front end portion TP (specifically, the coating layer NZf covering the front end portion TP) and the substrate S as shown in FIG. The liquid material Q is discharged from the discharge port OP so that the body Q is sandwiched.

  Here, if the affinity of the tip portion TP with the liquid material Q is stronger than the affinity of the liquid materials Q, the liquid material Q will contact the tip portion TP rather than contact with the liquid materials Q. And For this reason, the liquid Q is attached to the tip portion TP, and the fixing property to the substrate S is deteriorated. In addition, when the affinity with the liquid Q in the inclined portions TSa and TSb that are adjacent portions as well as the tip portion TP is stronger than the affinity between the liquid materials Q, the liquid Q is inclined from the tip portion TP. It is transmitted to TSa and TSb, and the fixing property to the substrate S is lowered. Furthermore, when the affinity of the liquid material Q in the tip portion TP (and the adjacent portion) is stronger than the affinity of the liquid material Q and the substrate S, the liquid material Q is more in the tip portion TP (and the adjacent portion) than the substrate S. In this case, the fixability to the substrate S is deteriorated.

  On the other hand, in this embodiment, the nozzle NZ has the tip portion TP covered with the coating layer NZf, and the entire surface is formed using at least one of the materials (1) to (8). Therefore, the affinity of the nozzle NZ, particularly the liquid material Q at the tip portion TP, is weaker than the affinity of the liquid materials Q. Further, the affinity of the tip portion TP with the liquid material Q is weaker than the affinity between the substrate S and the liquid material Q.

  Therefore, when the liquid material Q is sandwiched between the tip portion TP of the nozzle NZ and the substrate S as described above, the liquid material Q is unlikely to adhere to the tip portion TP, and the liquid materials Q are likely to contact each other. It becomes. Further, the liquid Q is more likely to adhere to the substrate S than the tip portion TP.

  The controller CONT relatively moves the tip portion TP and the substrate S while discharging the liquid material Q from the discharge port OP in a state where the liquid material Q is held between the tip portion TP and the substrate S. In the present embodiment, the substrate S is disposed at a fixed position, and only the tip portion TP is moved in the + Y direction. By this operation, the liquid Q is arranged and fixed on the substrate S without flowing from the tip portion TP to the inclined portion TSa, the inclined portion TSb, or the like.

  Further, due to the affinity between the liquid materials Q arranged on the substrate S, when the substrate S moves away from the discharge port OP of the nozzle NZ, the liquid material Q applied on the substrate S pulls the liquid material Q at the tip portion TP. Acts as follows. As a result, as shown in FIG. 13, the coating film F of the liquid material Q is formed on the predetermined region of the substrate S with a substantially uniform film thickness. After forming the coating film F, the control unit CONT stops the discharge operation of the liquid material Q from the discharge port OP.

  After forming the coating film F of the liquid material Q in a predetermined region of the substrate S, the control unit CONT uses the substrate transport unit 25 to transfer the substrate S from the processing stage 28 to the second chamber CB2, as shown in FIG. Move in + X direction. Further, the control unit CONT moves the nozzle NZ in the −Y direction and returns it to the nozzle standby unit 44.

14-17 is a figure which shows the process of the reduced pressure drying process of the coating device CTR which concerns on this embodiment.
After the substrate S reaches the second opening 22 of the first chamber CB1, as shown in FIG. 14, the control unit CONT opens the gate valve V2, and moves the substrate S from the first chamber CB1 to the second chamber CB2. And transport. In addition, when performing the said conveyance step, the board | substrate S passes through 3rd chamber CB3 arrange | positioned at the connection part CN. When the substrate S passes through the third chamber CB3, the control unit CONT causes the substrate S to be dried using the reduced pressure drying unit VD. Specifically, after the substrate S is accommodated in the processing chamber 50a of the third chamber CB3, the control unit CONT closes the gate valve V2, as shown in FIG.

  After closing the gate valve V2, the control unit CONT adjusts the position of the heating unit 53 in the Z direction using the lifting mechanism 53a. Thereafter, as shown in FIG. 16, the control unit CONT adjusts the atmosphere of the processing chamber 50 a using the gas supply unit 58 and depressurizes the processing chamber 50 a using the exhaust unit 59. When the processing chamber 50a is depressurized by this operation, evaporation of the solvent contained in the coating film F formed on the substrate S is promoted, and the coating film F is dried. The control unit CONT may adjust the position of the heating unit 53 in the Z direction using the lifting mechanism 53a while performing the pressure reducing operation for reducing the pressure of the processing chamber 50a using the exhaust unit 59.

  Further, as shown in FIG. 16, the control unit CONT heats the coating film F on the substrate S using the heating unit 53. By this operation, evaporation of the solvent contained in the coating film F on the substrate S is promoted, and the drying process under reduced pressure can be performed in a short time. The control unit CONT may adjust the position of the heating unit 53 in the Z direction using the lifting mechanism 53a while the heating unit 53 performs the heating operation.

  After the vacuum drying process is performed, the control unit CONT opens the gate valve V3 and transports the substrate S from the connection unit CN to the second chamber CB2, as shown in FIG. After the substrate S is accommodated in the processing chamber 60a of the second chamber CB2, the control unit CONT closes the gate valve V3.

18-22 is a figure which shows the process of the baking process of the coating device CTR which concerns on this embodiment.
By the movement of the substrate support portion 72a, the substrate S is arranged at the center portion on the first heating plate 83 as shown in FIG. Thereafter, the control unit CONT moves the lift unit 85 in the + Z direction as shown in FIG. By this operation, the substrate S is separated from the substrate support portion 72 a of the transport arm 72 and is supported by the plurality of support pins 85 a of the lift portion 85. In this way, the substrate S is transferred from the substrate support portion 72a to the lift portion 85. After the substrate S is supported by the support pins 85 a of the lift unit 85, the control unit CONT retracts the substrate support unit 72 a to the outside of the heating chamber 70 in the −X direction.

  After retracting the substrate support part 72a, the control part CONT moves the lift part 85 in the -Z direction and moves the second storage part 82 in the -Z direction as shown in FIG. By this operation, the edge portion 82a of the second accommodating portion 82 overlaps the edge portion 81a of the first accommodating portion 81, and the sealing portion 86 is sandwiched between the edge portion 82a and the edge portion 81a. For this reason, the baking chamber 80 sealed with the 1st accommodating part 81, the 2nd accommodating part 82, and the sealing part 86 is formed (accommodating step).

  After forming the baking chamber 80, the control unit CONT moves the lift unit 85 in the −Z direction and places the substrate S on the first heating plate 83 as shown in FIG. 21. After the substrate S is placed on the first heating plate 83, the control unit CONT moves the second heating plate 84 in the −Z direction to bring the second heating plate 84 and the substrate S closer to each other. The controller CONT adjusts the position of the second heating plate 84 in the Z direction as appropriate.

  After adjusting the position of the second heating plate 84 in the Z direction, the control unit CONT uses a gas supply unit 87 to enter the nitrogen gas, hydrogen sulfide gas, hydrogen selenide gas into the firing chamber 80 as shown in FIG. And the baking chamber 80 is sucked using the exhaust part 88. By this operation, the atmosphere and pressure in the firing chamber 80 are adjusted, and an air stream of nitrogen gas, hydrogen sulfide gas, and hydrogen selenide gas is formed from the second storage portion 82 to the first storage portion 81. In a state in which an air flow of nitrogen gas, hydrogen sulfide gas, and hydrogen selenide gas is formed, the control unit CONT operates the first heating plate 83 and the second heating plate 84 to perform the firing operation of the substrate S (heating) Step). By this operation, the solvent component evaporates from the coating film F of the substrate S, and bubbles contained in the coating film F are removed. Further, the solvent component, bubbles, and the like evaporated from the coating film F are pushed away by the air flow of nitrogen gas, hydrogen sulfide gas, and hydrogen selenide gas, and are sucked from the exhaust unit 88.

  In the firing operation of the substrate S, the control unit CONT detects the concentration of a predetermined gas (eg, hydrogen sulfide gas, hydrogen selenide gas) containing sulfur element and selenium element among the gases in the heating chamber 70 (detection step). ). The controller CONT uses the gas concentration detectors SR1 and SR2 for this detection. The control unit CONT operates the gas concentration detection units SR1 and SR2 after the hydrogen sulfide gas and hydrogen selenide gas are supplied from the gas supply unit 87 to the firing chamber 80, and the concentration of the hydrogen sulfide gas and hydrogen selenide gas. Is detected. The gas concentration detectors SR1 and SR2 detect the concentrations of hydrogen sulfide gas and hydrogen selenide gas, and the detection results are transmitted to the controller CONT.

  Since the gas concentration detection unit SR1 performs detection at a position facing the surface of the substrate S on which the liquid F is applied, the concentration of hydrogen sulfide gas and hydrogen selenide gas around the substrate S is efficiently detected. Is done. Further, the concentration of hydrogen sulfide gas and hydrogen selenide gas contained in the gas exhausted from the connection pipe 88b is detected by the gas concentration detector SR2.

  The control unit CONT adjusts the concentration of hydrogen sulfide gas and hydrogen selenide gas in the heating chamber 70 (in the baking chamber 80) based on the detection result (adjustment step). In this adjustment, the control unit CONT determines that the control unit CONT exceeds the first threshold value on the lower limit side set in advance and falls below the second threshold value set on the upper limit side as described above. The heating operation is performed while the supply of hydrogen sulfide gas and hydrogen selenide gas is continued.

  On the other hand, when the detection result falls below the first threshold (lower threshold), the control unit CONT supplies the hydrogen sulfide gas and the hydrogen selenide gas into the heating chamber 70 using the gas supply unit 87 (supply step). . This supply step includes increasing the supply amount of the hydrogen sulfide gas and hydrogen selenide gas supplied to the heating chamber 70. The controller CONT maintains the supply amount of the hydrogen sulfide gas and the hydrogen selenide gas while increasing the detection result until the detection result exceeds the first threshold value.

  When the detection result exceeds the second threshold (upper limit threshold), the gas supply unit 87 reduces the supply amount of hydrogen sulfide gas and hydrogen selenide gas, and supplies hydrogen sulfide gas and hydrogen selenide gas. The concentration of hydrogen sulfide gas and hydrogen selenide gas in the heating chamber 70 is reduced by performing either the operation of stopping the operation or the operation of exhausting the gas in the heating chamber 70 using the exhaust unit 88. Let The control unit CONT causes at least one of reduction of the supply amount of hydrogen sulfide gas and hydrogen selenide gas, stop of supply, and exhaust (exhaust step) until the detection result falls below the second threshold value.

  In the baking operation, at least one component of the metal components contained in the coating film F is heated to the melting point or higher to dissolve at least a part of the coating film F. For example, if the coating film F is used in a CZTS type solar cell, among the components constituting the coating film F, Sn, S, and Se are heated to a melting point or higher, and these substances are liquefied and applied. Aggregate the membrane F. Thereafter, the coating film F is cooled to a temperature at which the coating film F is solidified. By solidifying the coating film F, the strength of the coating film F is increased.

  After such a baking operation is completed, the control unit CONT transports the substrate S in the −X direction. Specifically, it is unloaded from the baking unit BK through the substrate transfer unit 65 from the heating chamber 70, and is returned to the substrate supply / recovery unit LU through the vacuum drying unit VD and the coating processing unit CT. After the substrate S is returned to the substrate supply / recovery unit LU, the control unit CONT opens the lid 14 with the gate valve V1 closed. Thereafter, the operator collects the substrate S in the chamber 10 and accommodates the new substrate S in the accommodation chamber 10 a of the chamber 10.

  When the substrate S is returned to the substrate supply / recovery unit LU and then another coating film is formed on the coating film F formed on the substrate S, the control unit CONT applies the substrate S again. It is made to convey to part CT, and a coating process, a reduced pressure drying process, and a baking process are repeatedly performed. In this way, the coating film F is laminated on the substrate S.

As described above, according to the present embodiment, the coating layer NZf is formed on the tip portion TP of the nozzle NZ so that the affinity with the liquid material Q is weaker than the affinity between the liquid materials Q. Therefore, it is possible to suppress the liquid Q discharged from the discharge port OP of the nozzle NZ from adhering to the tip portion TP of the nozzle NZ. Thereby, the liquid Q is easily fixed on the substrate S. Therefore, the liquid material Q can be applied on the substrate S without unevenness.
In particular, when the nozzle NZ is configured to discharge the liquid material Q containing metal, the metal may adhere when the liquid material Q containing metal adheres to the tip portion TP of the nozzle NZ. It is not easy to scrape off this fixed matter. However, according to the present embodiment, since the liquid material Q containing metal is suppressed from adhering to the tip portion TP of the nozzle NZ, it is possible to suppress the occurrence of metal sticking matter at the tip portion TP of the nozzle NZ. it can.

  Further, the coating layer NZf is provided in a portion of the nozzle NZ that includes the tip portion TP and a portion adjacent to the tip portion TP, so that the liquid material Q is transferred from the tip portion TP of the nozzle NZ to the tip portion TP. It is possible to suppress the transmission to portions (inclined portions TSa, TSb, wall portions TSc, TSd) adjacent to the.

  Further, the liquid material Q includes a solvent for dispersing the metal, and the coating layer NZf is formed so that the affinity with the solvent is weaker than the affinity between the solvents, so that the discharge port of the nozzle NZ It is possible to suppress the liquid Q containing the solvent discharged from the OP from adhering to the tip portion TP of the nozzle NZ. As a result, the liquid Q containing the solvent is easily fixed to the substrate S. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  In addition, the coating layer NZf is formed so that the affinity between the solvent and the solvent is weaker than the affinity between the solvent and the substrate S, so that the liquid material Q containing the solvent becomes the tip portion TP of the nozzle NZ. It becomes easier to fix to the substrate S than the coating layer NZf. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  In addition, since the coating layer NZf is formed using a hard carbon film, the liquid Q is hardly attached to the coating layer NZf, and thus the liquid Q is easily fixed on the substrate S. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  Further, since at least the tip portion TP of the nozzle NZ is formed using titanium, the affinity between the tip portion TP of the nozzle NZ and the liquid material Q is weaker than the affinity between the liquid materials Q. The liquid Q discharged from the discharge port OP of the nozzle NZ can be prevented from adhering to the tip portion TP of the nozzle NZ. Thereby, the liquid Q is easily fixed on the substrate S. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  In addition, since the substrate S is formed using molybdenum, the liquid Q is easily fixed to the substrate S. Therefore, the liquid Q can be uniformly applied on the substrate S.

  In addition, the first chamber CB1 surrounding the coating space K1 where the liquid material Q is applied by the coating unit 31 is provided, and the third chamber CB3 surrounding the post-application moving space K2 of the substrate S coated with the liquid material Q, the second chamber CB3. By providing the chamber CB2 and the heating chamber 70, the space in which the liquid material Q is disposed is surrounded by the chambers CB1, CB3, CB2, 70, so that deterioration of the liquid material Q can be suppressed.

  In addition, a gas supply unit 37a that supplies an inert gas to a space surrounded by the first chamber CB1, a gas supply unit 58 that supplies an inert gas to a space surrounded by the third chamber CB3, and a second chamber CB2 By providing a gas supply unit 68 for supplying an inert gas to the space formed and a gas supply unit 87 for supplying an inert gas to the space surrounded by the heating chamber 70, the chamber is surrounded by the chambers CB 1, CB 3, CB 2, 70. Since the inert gas is supplied to the remaining space, the deterioration of the liquid material Q can be more reliably suppressed in the space surrounded by the chambers CB1, CB3, CB2, 70.

  Further, the discharge port OP is formed so as to discharge the liquid material Q to the discharge region facing the front end portion TP, and the relative transport unit drives the substrate S so as to pass through the discharge region. By moving the substrate S alone with the nozzles NZ arranged at fixed positions, the liquid material Q can be applied onto the substrate S without unevenness.

  In addition, the relative driving unit includes the nozzle driving unit NA that drives the nozzle NZ so that the ejection region scans on the substrate S, so that only the nozzle NZ is moved in a state where the substrate S is disposed at a fixed position. Thus, the liquid material Q can be applied onto the substrate S without any unevenness.

  In addition, since the relative drive unit includes both the substrate transport unit 25 and the nozzle drive unit NA, as relative drive, for example, only the substrate S is moved, only the nozzle NZ is moved, and both the substrate S and the nozzle NZ are moved. Can be taken.

  Further, according to this method, the tip portion TP on which the coating layer NZf is formed is opposed to the substrate S so that the affinity between the liquid materials Q is weaker than the affinity between the liquid materials Q, and the tip portion By discharging the liquid material Q from the discharge port OP so that the liquid material Q is sandwiched between the ATP and the substrate S, the liquid material Q becomes difficult to adhere to the tip portion TP, and the liquid materials Q It will be in a state where it is easy to touch. If the tip portion TP and the substrate S are relatively moved while discharging the liquid material Q from the discharge port OP in this state, the liquid materials Q arranged on the substrate S try to contact each other on the substrate S. The body Q can be easily fixed on the substrate S without flowing from the tip portion TP along the surface of the nozzle NZ. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  In the present embodiment, the example in which at least the tip portion TP of the nozzle NZ is formed using titanium has been described, but the present invention is not limited thereto. For example, at least the tip portion TP of the nozzle NZ may be formed using SUS. Further, at least the tip portion TP of the nozzle NZ may be formed using a material different from titanium or SUS. Also in this configuration, at least the tip portion TP of the nozzle NZ is covered with the coating layer NZf, thereby suppressing the liquid Q discharged from the discharge port OP of the nozzle NZ from adhering to the tip portion TP of the nozzle NZ. be able to. Thereby, the liquid Q is easily fixed on the substrate S. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  In the present embodiment, the example in which the coating layer NZf is formed using a hard carbide film has been described, but the present invention is not limited thereto. For example, the coating layer NZf may be formed using a fluorine-based resin, an organic silicon compound (for example, also referred to as spin-on glass: SOG), an inorganic silicon compound, or silicon carbide (SiC). Also in this configuration, since the liquid Q is hardly attached to the coating layer NZf, the liquid Q is easily fixed to the substrate S. Therefore, the liquid material Q can be applied on the substrate S without unevenness.

  Further, in the present embodiment, when performing the application operation, the example in which the liquid material Q is applied to the substrate S by moving the nozzle NZ in a state where the substrate S is disposed at a fixed position has been described. Not exclusively. For example, the liquid material Q may be applied to the substrate S by moving the substrate S in a state where the nozzle NZ is disposed at a fixed position. Further, both the nozzle NZ and the substrate S may be moved.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment, in the adjustment of the concentration of hydrogen sulfide gas and hydrogen selenide gas in the heating chamber 70 (in the baking chamber 80), the control unit CONT determines that the heating chamber has a detection result lower than the first threshold value. Although the operation of increasing the supply amount of hydrogen sulfide gas and hydrogen selenide gas supplied into 70 has been described as an example, it is not limited thereto.

  FIG. 23 is a diagram illustrating one step of the firing process. As shown in FIG. 23, the control unit CONT may supply a solid containing sulfur and selenium alone into the heating chamber 70 using the solid supply unit 89 (supply step). In this case, sulfur and selenium contained in the solid supplied to the inside of the heating chamber 70 are sublimated by the heat in the heating chamber 70 and contribute to improvement of the sulfur element concentration and the selenium element concentration in the atmosphere.

  Further, for example, in the above-described embodiment, the configuration in which the gas concentration detection units SR1 and SR2 are arranged inside the heating chamber 70 is described as an example, but the configuration is not limited thereto. For example, a configuration in which a gas at a predetermined position in the heating chamber 70 is exhausted to the outside of the heating chamber 70 and the concentration of hydrogen sulfide or hydrogen selenide contained in the exhausted gas may be detected.

  For example, in the above-described embodiment, the configuration in which the gas concentration detection units SR1 and SR2 are arranged in the heating chamber 70 arranged in the firing unit BK has been described as an example, but the configuration is not limited thereto. For example, the gas concentration detection unit having the same configuration as the gas concentration detection units SR1 and SR2 may be disposed in the third chamber CB3 that connects the first chamber CB1 and the second chamber CB2. In this case, it is only necessary to detect the concentration of hydrogen sulfide gas and hydrogen selenide gas in the atmosphere and adjust the concentration during heating by the vacuum drying unit VD.

  For example, the gas concentration detection part of the same configuration as the gas concentration detection parts SR1 and SR2 may be arranged inside the first chamber CB1. When the coating process is performed by the coating processing unit CT, a gas containing a chalcogen element (eg, hydrogen sulfide gas, hydrogen selenide gas, etc.) may be generated. Therefore, it is desirable to detect changes in the environment around the substrate even during the coating process.

  In this case, in the gas concentration detection unit, the substrate S is accommodated in the first chamber CB1 (first accommodation step), and the liquid material is applied to the substrate S by the application processing unit CT (first processing step). In some cases, it is possible to detect (detection step) the concentration of hydrogen sulfide gas and hydrogen selenide gas in the atmosphere during the coating process.

  The position of the gas concentration detection unit can be set to, for example, a position along the movement path of the nozzle NZ or a position near the exhaust port by providing an exhaust port (not shown). Further, for example, the position of the gas concentration detection unit may be a position between the liquid material supply unit 33 and the waste liquid storage unit 35 or a position on the + X side or the −X side of the nozzle standby unit 44. Moreover, the gas concentration detection part may be arrange | positioned on the exterior (for example, outer wall) of 1st chamber CB1.

  The gas concentration detection unit may be provided in at least one of the first chamber CB1, the second chamber CB2 (heating chamber 70), and the third chamber CB3. In this case, the concentration of hydrogen sulfide gas and hydrogen selenide gas in the atmosphere can be detected (detection step) during at least one of the coating process, the reduced pressure drying process, and the heating process, and the concentration can be adjusted. It can be performed.

  Moreover, in the said embodiment, although the structure which performs baking operation in the baking part BK of 2nd chamber CB2 was mentioned as an example, it demonstrated, It is not restricted to this. For example, as shown in FIG. 24, a fourth chamber CB4 may be separately provided at a position different from the second chamber CB2, and the substrate S may be heated by the heating unit HT provided in the fourth chamber CB4. Absent.

  In this case, for example, after the coating film F is laminated on the substrate S, a heating process (second heating step) for firing the laminated coating film F is performed in the heating unit HT of the fourth chamber CB4. be able to. In the heat treatment in the second heating step, the coating film F is heated at a higher heating temperature than the heat treatment by the baking part BK. By this heat treatment, the solid content (metal component) of the laminated coating film F can be crystallized, so that the film quality of the coating film F can be further improved.

  In addition, you may make it perform the heating after laminating | stacking the coating film F on the board | substrate S in the baking part BK of 2nd chamber CB2. In this case, in the baking part BK, what is necessary is just to control so that the heating temperature at the time of baking the coating film F after laminating becomes higher than the heating temperature at the time of baking each layer of the coating film F.

  Here, it can be set as the structure by which gas concentration detection part SR3 of the same structure as gas concentration detection part SR1, SR2 as described in the said embodiment was provided in 4th chamber CB4. In this case, the concentration of hydrogen sulfide and hydrogen selenide can be detected by the gas concentration detector SR3 during heating in the fourth chamber CB4. Further, the atmosphere of the fourth chamber CB4 can be adjusted based on the detection result of the gas concentration detector SR3.

  In the above-described embodiment, the elevating mechanism 53a that adjusts the distance between the substrate S and the heating unit 53 in the third chamber CB3 has been described as an example. However, the present invention is not limited thereto. There is no. For example, the elevating mechanism 53a may be configured to move not only the heating unit 53 but also the substrate S in the Z direction. Further, the lifting mechanism 53a may be configured to move only the substrate S in the Z direction.

  In the above-described embodiment, the configuration in which the heating unit 53 is disposed on the −Z side (vertical direction lower side) of the substrate S in the reduced-pressure drying unit VD has been described as an example. However, the present invention is not limited to this. For example, the heating unit 53 may be configured to be disposed on the + Z side (vertical direction upper side) of the substrate S. In addition, a configuration that can move between a position on the −Z side of the substrate S and a position on the + Z side of the substrate S by using the elevating mechanism 53a may be used. In this case, the shape of the heating unit 53 may be a configuration that can pass through a plurality of rollers 57 constituting the substrate transport unit 55 (for example, an opening is provided in the heating unit 53).

  Further, as a configuration of the coating apparatus CTR, for example, as shown in FIG. 25, on the + X side of the substrate supply / recovery unit LU, a first chamber CB1 having a coating processing unit CT, a connection unit CN having a vacuum drying unit VD, and a baking unit. The second chamber CB2 having BK may be repeatedly arranged.

  FIG. 25 shows a configuration in which the first chamber CB1, the connection portion CN, and the second chamber CB2 are repeatedly arranged three times. However, the present invention is not limited to this, and the first chamber CB1, the connection portion CN, A configuration in which the second chamber CB2 is repeatedly arranged twice or a configuration in which the first chamber CB1, the connection portion CN, and the second chamber CB2 are repeatedly arranged four times or more may be used.

  According to such a configuration, since the first chamber CB1, the connection portion CN, and the second chamber CB2 are repeatedly provided in series in the X direction, the substrate S may be transported in one direction (+ X direction). Since there is no need to reciprocate S in the X direction, the step of laminating the coating film on the substrate S can be performed continuously. Thereby, a coating film can be efficiently formed on the substrate S.

  The various shapes and combinations of the constituent members shown in the above-described examples are merely examples, and various changes can be made based on design requirements and the like. For example, in the above-described embodiment, the configuration of the coating processing unit CT is the configuration using the slit type nozzle NZ. However, the configuration is not limited to this, and for example, a central dropping type coating unit may be used. An ink jet type application unit may be used. Further, for example, the liquid material disposed on the substrate S may be applied by being diffused using a squeegee or the like.

  Further, for example, when processing using the coating apparatus CTR is performed, at least one of the chamber apparatuses including the first chamber CB1, the second chamber CB2, the third chamber CB3, and the heating chamber 70 has a predetermined timing during operation. (For example, before carrying the substrate S into the chamber apparatus, after carrying it out, before discharging the liquid material Q by the nozzle NZ, after discharging, before heating by the heating unit 53, after heating, the first heating plate 83 and the second heating plate 84. Before and after heating, including before and after processing in each chamber) or during non-operation, maintenance processing and the surrounding or internal state of the chamber apparatus as necessary (for example, initial state, predetermined atmosphere) (Such as moving the structure, cleaning, adjusting the atmosphere, adjusting the temperature, etc.) It may be carried out.

  Moreover, when performing the said maintenance process, each process for setting it to the said predetermined state, etc., you may perform the washing | cleaning using a washing | cleaning liquid etc., for example, respond | correspond to these. Using the configuration, at least one gas or other types of gases such as nitrogen gas, oxygen gas, argon gas, air, and water vapor may be appropriately supplied around or inside each chamber apparatus. Moreover, you may make it operate | move a conveyance system (for example, a roller, an arm, etc.) suitably as needed.

  Moreover, in the said embodiment, when the coating device CTR is the structure accommodated in one room, the structure provided with the gas supply / discharge part which adjusts the atmosphere of the said room may be sufficient. In this case, hydrazine and the like in the room atmosphere can be discharged using the gas supply / discharge unit, so that the atmosphere in the entire room can be cleaned and the change in the coating environment can be more reliably suppressed. Can do.

  In addition, each component described as embodiment or its modification in the above can be suitably combined in the range which does not deviate from the meaning of this invention, and some components are combined among several combined components. It is also possible not to use as appropriate.

  CTR ... coating device S ... substrate Q ... liquid OP ... discharge port (discharge portion) TP ... tip portion TSa, TSb ... inclined portion (portion adjacent to tip portion) TSc, TSd ... wall portion (portion adjacent to tip portion) ) NA ... Nozzle drive unit NZ ... Nozzle NZf ... Coating layer CB1 ... First chamber (chamber) CB2 ... Second chamber (chamber) CB3 ... Third chamber (chamber) K1 ... Application space K2 ... Post-application movement space 25 ... Substrate Transport unit (substrate driving unit) 31 ... coating unit 37a ... gas supply unit (inert gas supply unit) 58 ... gas supply unit (inert gas supply unit) 68 ... gas supply unit (inert gas supply unit) 70 ... heating Chamber 87 ... Gas supply part (inert gas supply part)

Claims (12)

An application part having a nozzle for discharging a liquid containing metal from a discharge part provided at the tip part;
A relative drive unit for relatively moving the substrate and the nozzle in a state where the tip portion and the substrate are opposed to each other;
A coating apparatus comprising: a coating layer that covers at least the tip portion of the nozzle and is formed so that the affinity between the liquid bodies is weaker than the affinity between the liquid bodies. The coating apparatus according to claim 1, wherein the coating layer is provided on a portion of the nozzle including the tip portion and a portion adjacent to the tip portion. The liquid includes a solvent for dispersing the metal,
The coating apparatus according to claim 1, wherein the coating layer is formed such that the affinity between the solvent and the solvent is weaker than the affinity between the solvents. The coating apparatus according to claim 3, wherein the coating layer is formed so that the affinity between the solvent and the solvent is weaker than the affinity between the solvent and the substrate. The coating apparatus according to any one of claims 1 to 4, wherein the coating layer is formed using a hard carbon film. The coating device according to any one of claims 1 to 5, wherein at least the tip portion is formed using titanium. The coating apparatus according to claim 1, wherein the substrate is formed using molybdenum. Any one of Claims 1-7 further equipped with the chamber surrounding at least one space among the application | coating space where the said liquid body is apply | coated by the said application part, and the movement space after the application | coating of the said substrate where the said liquid substance was apply | coated. A coating apparatus according to claim 1. The coating apparatus according to claim 8, further comprising an inert gas supply unit that supplies an inert gas to the space surrounded by the chamber. The discharge portion is formed to discharge the liquid material to a discharge region facing the tip portion.
The coating apparatus according to claim 1, wherein the relative driving unit includes a substrate driving unit that drives the substrate so as to pass through the ejection region. The discharge portion is formed to discharge the liquid material to a discharge region facing the tip portion.
The coating apparatus according to claim 1, wherein the relative driving unit includes a nozzle driving unit that drives the nozzle so that the ejection region scans the substrate. An application method for applying a liquid containing metal to a substrate,
A nozzle for discharging the liquid material from a discharge portion formed at a tip portion covered with a coating layer formed so that the affinity between the liquid materials is weaker than the affinity between the liquid materials; Making the tip of the application part face the substrate;
Discharging the liquid material from the discharge section so that the liquid material is sandwiched between the tip portion and the substrate;
A step of relatively moving the tip portion and the substrate while discharging the liquid material from the discharge portion in a state where the liquid material is sandwiched between the tip portion and the substrate.

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