JP7178823B2 - Substrate heating device and substrate processing system - Google Patents

Description

The present invention relates to a substrate heating apparatus and a substrate processing system.

In recent years, as substrates for electronic devices, there is a market need for flexible resin substrates instead of glass substrates. For example, such a resin substrate uses a polyimide film. For example, a polyimide film is formed through a process of applying a polyimide precursor solution to a substrate and then heating the substrate (heating process). For example, polyamic acid varnish containing polyamic acid and a solvent is available as a polyimide precursor solution. A polyimide can be obtained by heat-curing this polyamic acid (see, for example, Patent Document 1, etc.).

On the other hand, there is a heat treatment apparatus that includes a member surrounding a heat treatment space in which a substrate to be processed is arranged and a hot plate that heats the substrate to be processed (see, for example, Patent Document 2).
In Japanese Unexamined Patent Application Publication No. 2002-100002, a film for preventing adhesion of impurities generated from a non-processed substrate is provided on the surrounding member. For example, the anti-adhesion film is mainly composed of fluororesin.

JP-A-5-129774 JP-A-2005-19593

According to the technique disclosed in Patent Document 2, it is possible to reduce adhesion of sublimate generated during heating of the photoresist to the unit.
However, since the anti-adhesion film of Patent Document 2 contains a fluororesin as a main component, there is a high possibility that application of the anti-adhesion film will be difficult depending on the heating temperature of the substrate. For example, when the heating temperature of the substrate is 300° C. or higher, it becomes difficult to use a fluororesin as the anti-adhesion film. Therefore, when a fluororesin is used as the anti-adhesion film, it becomes necessary to set the heating temperature of the substrate within a narrow range, and the heating temperature of the substrate tends to be limited.

In view of the circumstances as described above, it is an object of the present invention to provide a substrate heating apparatus and a substrate processing system capable of making it difficult to restrict the heating temperature of the substrate and suppressing adhesion of sublimate to the interior of the chamber. aim.

A substrate heating apparatus according to an aspect of the present invention includes: a chamber having a housing space formed therein for housing a substrate coated with a solution; and a substrate heating unit arranged in the housing space and capable of heating the substrate. and glass disposed at least between a surface of the substrate on which the solution is applied and an opposing surface of the chamber facing the application surface.
According to this configuration, by including at least the glass disposed between the surface of the substrate to which the solution is applied and the opposing surface of the chamber facing the application surface, fumes traveling from the application surface of the substrate to the opposing surface of the chamber are prevented. Since it can be shielded with glass, it is possible to suppress adhesion of the sublimate to the opposing surface of the chamber (chamber interior). In addition, since the heat resistance temperature (continuous use temperature) of glass is higher than that of resin, the heating temperature of the substrate can be set in a wider range, and the heating temperature of the substrate is less restricted. Therefore, the heating temperature of the substrate is less likely to be restricted, and adhesion of the sublimate to the interior of the chamber can be suppressed.

In the above substrate heating apparatus, the glass may have a quartz content of 50% or more.
According to this configuration, the heat resistance temperature of the glass can be improved as compared with the case where the quartz content is less than 50%. Therefore, the substrate heating temperature can be set in a wider range, and the substrate heating temperature is less likely to be restricted.

In the above substrate heating apparatus, the infrared absorption rate of the glass is 30% or more in the near infrared wavelength region (1 μm or more and less than 2.5 μm) and 90% in the far infrared wavelength region (2.5 μm or more and 5 μm or less). or more.
According to this configuration, since the near-infrared absorptivity of the glass is 30% or more, the heating of the glass by near-infrared absorption is promoted compared to the case where the near-infrared absorptivity of the glass is less than 30%. can do. In addition, since the far-infrared absorptivity of the glass is 90% or more, the heating of the glass by far-infrared absorption can be accelerated compared to when the far-infrared absorptivity of the glass is less than 90%. can. By accelerating the heating of the glass in this way, it is possible to suppress the fumes traveling from the application surface of the substrate to the opposing surface of the chamber from being cooled on the surface of the glass and becoming a sublimate. Therefore, adhesion of the sublimate to the glass can be suppressed.

In the above substrate heating apparatus, the substrate may be a substrate coated with a solution for forming polyimide.
According to this configuration, the heating temperature of the substrate is less likely to be restricted during the formation of polyimide, and adhesion of the sublimate to the interior of the chamber can be suppressed.

In the above-described substrate heating apparatus, the chamber includes a top plate positioned above the substrate and forming the facing surface, a bottom plate positioned below the substrate and facing the top plate, and a periphery of the substrate. and a peripheral wall surrounding the chamber, wherein the glass may be provided on each of the top plate, the bottom plate and the peripheral wall of the chamber.
According to this configuration, the glass can block fumes from the coating surface of the substrate toward the top plate, bottom plate and peripheral walls of the chamber, thereby preventing sublimate from adhering to the top plate, bottom plate and peripheral walls of the chamber. can be suppressed.

In the above substrate heating apparatus, the glass may have a thickness of 0.5 mm or more and 10 mm or less.
According to this configuration, since the thickness of the glass is 0.5 mm or more, infrared rays are easily absorbed by the glass compared to the case where the thickness of the glass is less than 0.5 mm, so heating of the glass is promoted. It is easy to suppress adhesion of the sublimate to the glass. In addition, when the thickness of the glass is 10 mm or less, the glass is less likely to break because heat is more easily transferred than when the thickness of the glass exceeds 10 mm.

In the above substrate heating apparatus, the thermal expansion coefficient of the glass may be 15×10 ⁻⁷ /K or less in the range of 0° C. or higher and 750° C. or lower.
According to this configuration, compared with the case where the thermal expansion coefficient of the glass exceeds 15×10 ⁻⁷ /K in the range of 0° C. or higher and 750° C. or lower, the dimensional change of the glass is small, so the glass can be easily supported. For example, when the glass is supported by being sandwiched between support members, it is possible to suppress the generation of foreign matter due to rubbing between the glass and the support members.

In the above substrate heating apparatus, the substrate heating section may include an infrared heater supported by a top plate of the chamber, and the glass may be arranged between the top plate and the infrared heater.
According to this configuration, compared to the case where the glass is arranged between the substrate and the infrared heater, the infrared rays traveling from the infrared heater to the substrate are less likely to be blocked by the glass (because the infrared rays are more likely to travel directly to the substrate). It is easy to promote the heating of By the way, in the case of the method of heating the substrate by circulating hot air in an oven, there is a possibility that the circulation of the hot air may cause foreign matter to be blown up in the space for accommodating the substrate. On the other hand, according to this configuration, the substrate can be heated while the atmosphere in the substrate accommodation space is decompressed, so that the risk of foreign matter being stirred up in the substrate accommodation space can be reduced. Therefore, it is suitable for preventing foreign matter from adhering to the inner surface of the chamber or the substrate.

In the substrate heating apparatus described above, a mounting portion for mounting the glass to the chamber may be provided in the upper portion of the chamber, and the mounting portion may be arranged at a position avoiding the substrate in plan view.
According to this configuration, compared with the case where the mounting portion is arranged at a position overlapping the substrate in plan view, even if foreign matter is generated due to friction between the glass and the mounting portion, the foreign matter is prevented from falling onto the substrate. be able to.

A substrate processing system according to an aspect of the present invention includes the substrate heating apparatus described above.
According to this configuration, in the substrate processing system, the heating temperature of the substrate is less likely to be restricted, and adhesion of the sublimate to the interior of the chamber can be suppressed.

According to the present invention, it is possible to provide a substrate heating apparatus and a substrate processing system capable of making it difficult to limit the heating temperature of the substrate and suppressing adhesion of sublimate to the interior of the chamber.

1 is a perspective view of a substrate heating apparatus according to a first embodiment; FIG. FIG. 3 is a diagram including cross sections of a heating unit, a heat insulating member, a cover member, and a glass structure in the substrate heating apparatus according to the first embodiment; It is a side view showing a hot plate and its peripheral structure. It is a top view of a hot plate. FIG. 4 is a diagram for explaining the positional relationship between a transport roller, a substrate, and a hot plate; It is a top view of an infrared reflective part. FIG. 4 is a perspective view showing an attachment/detachment structure between a hot plate and an infrared reflecting section; It is a side view which shows the state which removed the infrared reflection part in FIG. It is a top view which shows a cooling mechanism. FIG. 4 is a diagram for explaining an example of heating control in a hot plate; FIG. It is a figure for demonstrating an example of operation|movement of the substrate heating apparatus which concerns on 1st embodiment. FIG. 12 is an operation explanatory view of the substrate heating apparatus according to the first embodiment, continued from FIG. 11; FIG. 13 is an operation explanatory view of the substrate heating apparatus according to the first embodiment, continued from FIG. 12; It is a figure for demonstrating the arrangement|positioning relationship of the attachment part of a glass top plate and a board|substrate which concern on 1st embodiment. It is a figure for demonstrating the arrangement structure of the glass peripheral wall which concerns on 1st embodiment, and a glass bottom plate. FIG. 4 is a diagram including cross sections of a heating unit, a heat insulating member, a cover member, and a glass structure in a substrate heating apparatus according to a second embodiment; It is a figure for demonstrating an example of operation|movement of the substrate heating apparatus which concerns on 2nd embodiment. FIG. 18 is an operation explanatory view of the substrate heating apparatus according to the second embodiment, continued from FIG. 17; FIG. 19 is an operation explanatory view of the substrate heating apparatus according to the second embodiment, continued from FIG. 18;

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is the X direction, a direction perpendicular to the X direction in the horizontal plane is the Y direction, and a direction perpendicular to the X and Y directions (that is, the vertical direction) is the Z direction.

(First embodiment)
<Substrate heating device>
FIG. 1 is a perspective view of a substrate heating apparatus 1 according to the first embodiment.
As shown in FIG. 1, the substrate heating apparatus 1 includes a chamber 2, a substrate loading/unloading section 24, a pressure adjustment section 3, a gas supply section 4, a gas diffusion section 60 (see FIG. 2), a hot plate 5, an infrared heater 6, a position The adjustment unit 7, the transport unit 8, the temperature detection unit 9, the pressure detection unit 14, the gas liquefaction recovery unit 11, the infrared reflection unit 30, the heating unit 80, the heat insulation member 26, the cover member 27, the glass structure 90 and the control unit 15 are I have. The control unit 15 centrally controls the constituent elements of the substrate heating apparatus 1 . In FIG. 1, a portion of the chamber 2 (a portion excluding a portion of the top plate 21), the substrate loading/unloading section 24, and the gas supply section 4 are indicated by two-dot chain lines.

<Chamber>
Chamber 2 can accommodate substrate 10 , hot plate 5 , infrared heater 6 and glass structure 90 . A housing space 2S capable of housing the substrate 10 is formed inside the chamber 2 . A substrate 10 , hot plate 5 and infrared heater 6 are housed in a common chamber 2 . The chamber 2 is formed in the shape of a rectangular parallelepiped box. Specifically, the chamber 2 includes a rectangular top plate 21 , a rectangular bottom plate 22 facing the top plate 21 , and a rectangular frame-like peripheral wall 23 connected to the outer peripheral edges of the top plate 21 and the bottom plate 22 . formed. For example, the −X direction side of the peripheral wall 23 is provided with a substrate loading/unloading port 23 a for loading and unloading the substrate 10 into and out of the chamber 2 .

The chamber 2 is configured to accommodate the substrate 10 in a closed space. For example, the airtightness in the chamber 2 can be improved by connecting the connecting portions of the top plate 21, the bottom plate 22, and the peripheral wall 23 by welding or the like without gaps.

The inner surface of the chamber 2 is a chamber-side reflecting surface 2a (see FIG. 2) that reflects infrared rays from the infrared heater 6. As shown in FIG. For example, the inner surface of the chamber 2 is a mirror surface (reflection surface) made of metal such as stainless steel. Thereby, the temperature uniformity in the chamber 2 can be improved as compared with the case where the inner surface of the chamber 2 is capable of absorbing infrared rays. The inner surface of the chamber 2 may be a mirror surface made of aluminum.

The chamber-side reflecting surface 2 a is provided on the entire inner surface of the chamber 2 . The chamber-side reflecting surface 2a is mirror-finished. Specifically, the surface roughness (Ra) of the chamber-side reflecting surface 2a is about 0.01 μm, and Rmax is about 0.1 μm. The surface roughness (Ra) of the chamber-side reflecting surface 2a is measured with a measuring instrument (Surfcom 1500SD2) manufactured by Tokyo Seimitsu Co., Ltd.

<Board loading/unloading part>
The substrate loading/unloading part 24 is provided on the −X direction side of the peripheral wall 23 . The substrate carry-in/out unit 24 enables the substrate 10 to be carried into the accommodation space 2S and enables the substrate 10 to be discharged from the accommodation space 2S. For example, the substrate loading/unloading part 24 is movable so as to open and close the substrate loading/unloading port 23a. For example, the substrate loading/unloading part 24 is a shutter capable of opening and closing the substrate loading/unloading port 23a. Specifically, the substrate loading/unloading part 24 is movable in a direction (Z direction or Y direction) along the peripheral wall 23 .

<Pressure adjuster>
The pressure adjuster 3 can adjust the pressure inside the chamber 2 . The pressure regulator 3 includes a vacuum pipe 3 a connected to the chamber 2 . The vacuum pipe 3a is a cylindrical pipe extending in the Z direction. For example, a plurality of vacuum pipes 3a are arranged at intervals in the X direction. In FIG. 1, only one vacuum pipe 3a is shown. The number of vacuum pipes 3a to be installed is not limited.

The vacuum pipe 3a shown in FIG. 1 is connected to a portion of the bottom plate 22 on the −X direction side near the substrate loading/unloading port 23a. The connecting portion of the vacuum pipe 3a is not limited to the portion of the bottom plate 22 on the -X direction side near the substrate loading/unloading port 23a. It is sufficient that the vacuum pipe 3 a is connected to the chamber 2 .

For example, the pressure adjustment unit 3 includes a pressure adjustment mechanism such as a pump mechanism. The pressure regulation mechanism has a vacuum pump 13 . The vacuum pump 13 is connected to a line extending from a portion (lower end) of the vacuum pipe 3 a opposite to the connection portion (upper end) with the chamber 2 .

The pressure adjusting unit 3 can adjust the pressure of the atmosphere in the housing space 2S of the substrate 10 coated with a solution for forming a polyimide film (polyimide) (hereinafter referred to as "polyimide forming liquid"). For example, the polyimide forming liquid contains polyamic acid or polyimide powder. The polyimide forming liquid is applied only to the first surface 10a (upper surface) of the rectangular plate-shaped substrate 10 .
The material to be applied (processed material) to the substrate 10 is not limited to the polyimide forming liquid, and may be any material for forming a predetermined film on the substrate 10 .

In addition, the pressure adjustment unit 3 can adjust the pressure of the atmosphere in the accommodation space _2S . , a mechanism for supplying an inert gas such as argon (Ar) (hereinafter also referred to as an "inert gas supply mechanism") may be provided. Thereby, it is possible to adjust the housing space 2S to a desired pressure condition. Such adjustment of the pressure conditions may be performed in each step of the containing step, the substrate heating step, and the chamber heating step in the substrate heating method to be described later.
In addition, an inert gas supply mechanism may be provided separately from the pressure adjustment unit 3, like the gas supply unit 4, which will be described later.

<Gas supply section>
The gas supply unit 4 can adjust the state of the internal atmosphere of the chamber 2 . The gas supply section 4 includes a gas supply pipe 4 a connected to the chamber 2 . The gas supply pipe 4a is a cylindrical pipe extending in the X direction. The gas supply pipe 4a is connected to a portion of the peripheral wall 23 on the +X direction side near the top plate 21 . Note that the connecting portion of the gas supply pipe 4a is not limited to the portion of the peripheral wall 23 on the +X direction side near the top plate 21 . The gas supply pipe 4 a may be connected to the chamber 2 .

The gas supply unit 4 can adjust the state of the accommodation space 2S by supplying an inert gas to the accommodation space 2S. The gas supply unit 4 supplies an inert gas such as nitrogen (N ₂ ), helium (He), argon (Ar) into the chamber 2 . The gas supply unit 4 may supply the gas when the temperature of the substrate is lowered, and the gas may be used for cooling the substrate.

The oxygen concentration of the internal atmosphere of the chamber 2 can be adjusted by the gas supply unit 4 . The lower the oxygen concentration (by mass) in the internal atmosphere of the chamber 2, the better. Specifically, the oxygen concentration in the internal atmosphere of the chamber 2 is preferably 100 ppm or less, more preferably 20 ppm or less.
For example, as will be described later, in the atmosphere when the polyimide forming liquid applied to the substrate 10 is cured, the oxygen concentration is set to the preferred upper limit or less, thereby facilitating the curing of the polyimide forming liquid. be able to.

<Gas diffusion part>
As shown in FIG. 2, the −X direction side of the gas supply pipe 4a protrudes into the chamber 2. As shown in FIG. The gas diffusion part 60 is connected to the projecting end of the gas supply pipe 4a inside the chamber 2 . The gas diffusion section 60 is arranged in a portion of the chamber 2 closer to the top plate 21 . The gas diffusion section 60 is arranged between the infrared heater 6 and the transfer section 8 within the chamber 2 . The gas diffusion part 60 diffuses the inert gas supplied from the gas supply pipe 4 a toward the substrate 10 .

The gas diffusion section 60 includes a cylindrical diffusion tube 61 extending in the X direction, a lid section 62 closing the -X direction end of the diffusion tube 61, the +X direction end of the diffusion tube 61 and the - of the gas supply pipe 4a. and a connecting portion 63 that connects with the X-direction end (protruding end). The outer diameter of the diffusion pipe 61 is larger than the outer diameter of the gas supply pipe 4a. A plurality of pores (not shown) are formed on the −Z direction side (lower side) of the diffusion tube 61 . That is, the lower portion of the diffusion tube 61 is porous. The internal space of the gas supply pipe 4 a communicates with the inside of the diffusion pipe 61 via the connecting portion 63 .

The inert gas supplied from the gas supply pipe 4a enters the diffusion tube 61 through the connecting portion 63 . The inert gas that has entered the diffusion tube 61 is diffused downward through a plurality of pores formed in the lower portion of the diffusion tube 61 . That is, the inert gas supplied from the gas supply pipe 4 a is diffused toward the substrate 10 by passing through the diffusion pipe 61 .

<Hot plate (first heating unit)>
As shown in FIG. 1, the hot plate 5 is arranged below the chamber 2 . The hot plate 5 is a substrate heating unit that is arranged on one side of the substrate 10 and capable of heating the substrate 10 . Hot plate 5 can heat substrate 10 at a first temperature. The hot plate 5 can heat the substrate 10 in stages. For example, the temperature range including the first temperature is the range of 20°C or higher and 300°C or lower. The hot plate 5 is arranged on the side of the second surface 10b (lower surface) opposite to the first surface 10a of the substrate 10 . The hot plate 5 is arranged on the bottom plate 22 side of the chamber 2 .

The hot plate 5 has a rectangular plate shape. The hot plate 5 can support the infrared reflecting section 30 from below.

FIG. 3 is a side view showing the hot plate 5 and its peripheral structure.
As shown in FIG. 3, the hot plate 5 includes a heater 5b as a heat source and a base plate 5c covering the heater 5b.
The heater 5b is a planar heating element parallel to the XY plane.
The base plate 5c includes an upper plate 5d covering the heater 5b from above and a lower plate 5e covering the heater 5b from below. The upper plate 5d and the lower plate 5e are rectangular plates. The thickness of the upper plate 5d is thicker than the thickness of the lower plate 5e.

In FIG. 3, reference numeral 18 denotes a heater temperature detection portion capable of detecting the temperature of the heater in the hot plate 5, and reference numeral 19 denotes a plate temperature detection portion capable of detecting the temperature of the upper plate 5d of the hot plate 5. FIG. For example, the heater temperature detector 18 and the plate temperature detector 19 are contact temperature sensors such as thermocouples.

FIG. 4 is a top view of the hot plate 5. FIG. As shown in FIG. 4, the hot plate 5 (that is, the upper plate 5d) has a mounting surface 5a (upper surface) on which the infrared reflecting portion 30 (see FIG. 3) can be mounted. The mounting surface 5 a is a flat surface along the back surface of the infrared reflecting section 30 . The mounting surface 5a is anodized. The mounting surface 5a includes a plurality of (for example, four in this embodiment) mounting areas A1, A2, A3, and A4 that are partitioned within the surface of the mounting surface 5a. The placement areas A1, A2, A3, and A4 have a rectangular shape extending in the X direction in a plan view. Note that the number of placement areas A1, A2, A3, and A4 is not limited to four, and can be changed as appropriate.

<Infrared heater (second heating part)>
As shown in FIG. 1, the infrared heater 6 is arranged above the chamber 2 . The infrared heater 6 can heat the substrate 10 with infrared rays. The infrared heater 6 is a substrate heating unit arranged on the other side of the substrate 10 and capable of heating the substrate 10 . Infrared heater 6 can heat substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 is provided separately from the hot plate 5 . The infrared heater 6 can heat the substrate 10 in stages. For example, the temperature range including the second temperature is the range of 200°C or higher and 600°C or lower. The infrared heater 6 is arranged on the side of the first surface 10 a of the substrate 10 . The infrared heater 6 is arranged on the top plate 21 side of the chamber 2 .

The infrared heater 6 is supported by the top plate 21 . A support member (not shown) for the infrared heater 6 is provided between the infrared heater 6 and the top plate 21 . The infrared heater 6 is fixed at a fixed position near the top plate 21 inside the chamber 2 . For example, the infrared heater 6 has a peak wavelength range of 1.0 μm or more and 4 μm or less. The peak wavelength range of the infrared heater 6 is not limited to the above range, and can be set to various ranges according to required specifications.

The rate of temperature rise of the infrared heater 6 is higher than the rate of temperature rise of the hot plate 5 .
For example, the temperature rise rate of the hot plate 5 is approximately 0.2° C./sec.
For example, the temperature rise rate of the infrared heater 6 is about 4° C./sec.

The temperature drop rate of the infrared heater 6 is higher than the temperature drop rate of the hot plate 5 .
For example, the temperature drop rate of the hot plate 5 is approximately 0.05° C./sec.
For example, the temperature drop rate of the infrared heater 6 is about 2° C./sec.

<Position adjuster>
The position adjustment section 7 is arranged below the chamber 2 . The position adjuster 7 can adjust the relative positions of the hot plate 5 and the infrared heater 6 and the substrate 10 . The position adjusting section 7 includes a moving section 7a and a driving section 7b. The moving part 7a is a columnar member extending vertically (in the Z direction). The upper end of the moving portion 7a is fixed to the lower surface of the hot plate 5. As shown in FIG. The driving portion 7b enables the moving portion 7a to move up and down. The moving part 7 a enables the substrate 10 to move between the hot plate 5 and the infrared heater 6 . Specifically, the moving unit 7a moves the substrate 10 up and down by driving the driving unit 7b while the substrate 10 is supported by the infrared reflecting unit 30 (see FIGS. 12 and 13).

The driving part 7b is arranged outside the chamber 2 . Therefore, even if particles are generated as the driving portion 7b is driven, the particles can be prevented from entering the chamber 2 by making the chamber 2 a closed space.

<Conveyor>
The transfer section 8 is arranged between the hot plate 5 and the infrared heater 6 in the chamber 2 . The transport unit 8 can transport the substrate 10 . The conveying section 8 is formed with a passing section 8h through which the moving section 7a can pass. The transport unit 8 includes a plurality of transport rollers 8a arranged along the X direction, which is the direction in which the substrate 10 is transported.

The plurality of conveying rollers 8a are arranged apart from each other on the +Y direction side and the −Y direction side of the peripheral wall 23 . In other words, the passing portion 8h is a space between the transport roller 8a on the +Y direction side of the peripheral wall 23 and the transport roller 8a on the −Y direction side of the peripheral wall 23 .

For example, a plurality of shafts (not shown) extending in the Y direction are arranged at intervals along the X direction on each of the +Y direction side and the −Y direction side of the peripheral wall 23 . Each transport roller 8a is rotationally driven around each shaft by a drive mechanism (not shown).

FIG. 5 is a diagram for explaining the positional relationship among the conveying roller 8a, the substrate 10 and the hot plate 5. As shown in FIG. FIG. 5 corresponds to a top view of the substrate heating apparatus 1 (see FIG. 1). For convenience, the chamber 2 is indicated by a two-dot chain line in FIG.
In FIG. 5, L1 is the distance between the conveying roller 8a on the +Y direction side of the peripheral wall 23 and the conveying roller 8a on the -Y direction side of the peripheral wall 23 (hereinafter referred to as "roller separation interval"). Further, L2 is the length of the substrate 10 in the Y direction (hereinafter referred to as "substrate length"). Further, L3 is the length of the hot plate 5 in the Y direction (hereinafter referred to as "hot plate length"). Note that the hot plate length L3 is substantially the same length as the Y-direction length of the infrared reflecting section 30 .

As shown in FIG. 5, the roller separating interval L1 is smaller than the substrate length L2 and larger than the hot plate length L3 (L3<L1<L2). Since the roller separating interval L1 is larger than the hot plate length L3, the moving portion 7a can pass through the passing portion 8h together with the hot plate 5 and the infrared reflecting portion 30 (see FIGS. 12 and 13).

<Temperature detector>
As shown in FIG. 1, the temperature detector 9 is arranged outside the chamber 2 . The temperature detector 9 can detect the temperature of the substrate 10 . Specifically, the temperature detection unit 9 is installed on the top plate 21 . A window (not shown) is attached to the top plate 21 . The temperature detection unit 9 detects the temperature of the substrate 10 through the window of the top plate 21 . For example, the temperature detection unit 9 is a non-contact temperature sensor such as a radiation thermometer. Although only one temperature detection unit 9 is shown in FIG. 1, the number of temperature detection units 9 is not limited to one and may be plural. For example, it is preferable to arrange a plurality of temperature detectors 9 in the center and four corners of the top plate 21 . Note that the temperature detection unit 9 may be arranged inside the chamber 2 . In this case, the temperature detection unit 9 may be a contact temperature sensor such as a thermocouple.

<Pressure detector>
The pressure detection unit 14 can detect the pressure in the accommodation space 2S (hereinafter also referred to as "chamber internal pressure"). For example, the main body (sensor) of the pressure detection unit 14 is arranged inside the chamber 2 . For example, the display section (pressure indicator) of the pressure detection section 14 is arranged outside the chamber 2 . For example, the pressure sensing unit 14 is a digital pressure sensor. Although only one pressure detection unit 14 is illustrated in FIG. 1, the number of pressure detection units 14 is not limited to one, and may be plural.

<Gas liquefaction recovery part>
The gas liquefaction recovery unit 11 is connected to the line of the pressure adjustment unit 3 (vacuum pump 13). The gas liquefaction recovery unit 11 is arranged downstream of the vacuum pump 13 in the line of the pressure adjustment unit 3 . The gas liquefaction recovery unit 11 can liquefy the gas passing through the vacuum pipe 3 a and recover the solvent volatilized from the polyimide forming liquid applied to the substrate 10 .

If the gas liquefaction recovery unit 11 is arranged upstream of the vacuum pump 13 in the line of the pressure adjustment unit 3, the liquid liquefied on the upstream side may be vaporized during the next depressurization, and the vacuum drawing time may be delayed. On the other hand, according to the present embodiment, the gas liquefaction recovery unit 11 is arranged downstream of the vacuum pump 13 in the line of the pressure adjustment unit 3, so that the liquid liquefied on the downstream side is Since it is not vaporized, it is possible to avoid delays in evacuation time.

<Swing part>
The substrate heating apparatus 1 may further include a swinging portion (not shown) capable of swinging the substrate 10 . For example, the swing unit swings the substrate 10 in a direction along the XY plane or a direction along the Z direction while the substrate 10 is being heated. As a result, the substrate 10 can be heated while being oscillated, so that the temperature uniformity of the substrate 10 can be improved.
For example, the swing section may be provided in the position adjustment section 7 . In addition, the arrangement position of the oscillating portion is not limited.

<Infrared Reflector>
The infrared reflecting section 30 has a hot plate side reflecting surface 30 a that reflects infrared rays directed from the infrared heater 6 toward the hot plate 5 . The hot plate-side reflecting surface 30 a is arranged between the hot plate 5 and the infrared heater 6 .

The hot plate-side reflecting surface 30a is mirror-finished. Specifically, the surface roughness (Ra) of the hot plate-side reflecting surface 30a is about 0.01 μm, and Rmax is about 0.1 μm. The surface roughness (Ra) of the hot plate-side reflecting surface 30a is measured with a measuring instrument (Surfcom 1500SD2) manufactured by Tokyo Seimitsu Co., Ltd.

FIG. 6 is a top view of the infrared reflecting section 30. FIG.
As shown in FIG. 6, the hot plate-side reflecting surface 30a is provided with a plurality of substrate supporting projections 35 (not shown in FIG. 1) capable of supporting the substrate 10 (for example, 80 in this embodiment). there is Note that the number of substrate support projections 35 is not limited to 80, and can be changed as appropriate.

The board support protrusion 35 is a cylindrical pin. In addition, the board|substrate support convex part 35 is not limited to a column shape. For example, the substrate support protrusions 35 may be spherical bodies such as ceramic balls. Further, the substrate support projection 35 may be prismatic, and can be changed as appropriate.

The plurality of substrate supporting projections 35 are arranged at regular intervals in the X and Y directions within the plane of the hot plate side reflecting surface 30a. For example, the arrangement interval of the substrate supporting protrusions 35 is set to about 50 mm. For example, the height of the substrate support projection 35 is set to about 0.1 mm. For example, the height of the substrate support projections 35 can be adjusted within a range of 0.05 mm to 3 mm. Note that the arrangement interval of the substrate supporting protrusions 35 and the height of the substrate supporting protrusions 35 are not limited to the above dimensions, and the substrate 10 is supported while a gap is formed between the hot plate side reflecting surface 30a and the substrate 10. It can be changed as appropriate within a possible range.

The infrared reflecting section 30 is divided into a plurality (for example, four in this embodiment) of placement areas A1, A2, A3, and A4 (see FIG. 3). Infrared reflectors 31, 32, 33, and 34 are provided. The number of infrared reflecting plates 31, 32, 33, and 34 is not limited to four, and can be changed as appropriate. For example, only one infrared reflector may be used.

The plurality of infrared reflecting plates 31, 32, 33, 34 are substantially the same size. Thereby, the infrared reflecting plates 31, 32, 33, and 34 placed in the respective placement areas A1, A2, A3, and A4 (see FIG. 3) can be shared. In addition, the sizes of the infrared reflecting plates 31, 32, 33, and 34 may be different from each other, and can be changed as appropriate.

The infrared reflecting plates 31, 32, 33, and 34 are in the form of rectangular plates that are long in the X direction. A total of 20 substrate support projections 35 arranged in 5 rows and 4 columns (that is, 5 in the X direction and 4 in the Y direction) are arranged on one infrared reflecting plate 31 , 32 , 33 , 34 .

Two adjacent infrared reflective plates 31, 32, 33, 34 are arranged at intervals S1, S2. The space S1 is set to a size that allows thermal expansion of the two adjacent infrared reflecting plates 31, 32, 33, and 34. As shown in FIG. Specifically, the space S1 between the two infrared reflecting plates 31, 32, 33, 34 adjacent to each other in the X direction is set to a size capable of absorbing the expansion of the infrared reflecting plates 31, 32, 33, 34 in the X direction. there is A space S2 between two infrared reflective plates 31, 32, 33, 34 adjacent to each other in the Y direction is set to a size capable of absorbing expansion of the infrared reflective plates 31, 32, 33, 34 in the Y direction.

In addition, the arrangement structure of the infrared reflecting plates 31, 32, 33, and 34 is not limited to the above. For example, the infrared reflecting plates 31, 32, 33, and 34 may be fixed by pressing them from the sides with biasing members. For example, as the biasing member, a spring that expands and contracts so as to absorb the expansion of the infrared reflecting plates 31, 32, 33, and 34 can be used.
When the infrared reflecting section 30 is a single plate member of G6 size (length 150 cm×width 185 cm) or larger, the plate member may be fixed by pressing the plate member from the side with an urging member such as a spring. By the way, if the plate member is G6 size or larger, even one plate member is quite heavy. However, the plate member can be easily fixed by pressing the plate member from the side surface with an urging member such as a spring.

<Detachable Structure of Hot Plate and Infrared Reflector>
FIG. 7 is a perspective view showing a detachable structure 40 between the hot plate 5 and the infrared reflecting section 30. As shown in FIG. 8 is a side view showing a state in which the infrared reflecting section 30 is removed in FIG. 3. FIG. In FIG. 7, the first infrared reflecting plate 31 and the second infrared reflecting plate 32 are arranged in the first placing area A1 and the second placing area A2, respectively, and the third infrared reflecting plate 32 is arranged in the third placing area A3. A state in which the reflector 33 is about to be placed is shown.

As shown in FIG. 7, a detachable structure 40 is provided between the hot plate 5 and the infrared reflecting section 30 (see FIG. 6) to allow the infrared reflecting section 30 to be detachable from the hot plate 5. As shown in FIG.
The attachment/detachment structure 40 includes a projecting portion 41 projecting from the mounting surface 5a and an insertion portion 42 formed on the infrared reflecting portion 30 and into which the projecting portion 41 is inserted.

The protruding portion 41 is arranged in the center of the placement areas A1, A2, A3, and A4 in the Y direction. The protruding portion 41 includes a first protruding portion 41a and a second protruding portion 41b separated from the first protruding portion 41a in the X direction within the mounting surface 5a.

The first convex portion 41a and the second convex portion 41b are arranged one each for one placement area A1, A2, A3, A4. The first convex portion 41a is arranged on the −X direction side in the placement areas A1, A2, A3, and A4. The second convex portion 41b is arranged on the +X direction side in the placement areas A1, A2, A3, and A4. As shown in FIG. 8, the first protrusion 41a and the second protrusion 41b have substantially the same height.

The first convex portion 41a and the second convex portion 41b are cylindrical pins. In addition, the first convex portion 41a and the second convex portion 41b are not limited to the cylindrical shape. For example, the first convex portion 41a and the second convex portion 41b may be prismatic and can be changed as appropriate.

As shown in FIG. 7, the insertion portion 42 is positioned at the center of the infrared reflecting plates 31, 32, 33, 34 in the short direction (that is, when the infrared reflecting plates 31, 32, 33, 34 are placed on the mounting surface 5a). center in the Y direction). The insertion portion 42 expands or expands the infrared reflecting portion 30 in a direction (X direction) separating at least the first concave portion 42a into which the first convex portion 41a is inserted, and at least the first convex portion 41a and the second convex portion 41b. and a second concave portion 42b into which the second convex portion 41b is inserted so as to allow contraction.

One first concave portion 42a and one second concave portion 42b are arranged for each infrared reflecting plate 31, 32, 33, 34. As shown in FIG. The first concave portion 42a is arranged on one side in the longitudinal direction of the infrared reflecting plates 31, 32, 33, 34 (that is, the -X direction side when the infrared reflecting plates are placed on the placing surface 5a). The second concave portion 42b is located on the other longitudinal direction side of the infrared reflecting plates 31, 32, 33, 34 (that is, on the +X direction side when the infrared reflecting plates 31, 32, 33, 34 are placed on the mounting surface 5a). are placed.

The first concave portion 42a is a concave portion recessed in the thickness direction of the infrared reflecting plates 31, 32, 33, 34 so that the pin can be detachably inserted therein. The first concave portion 42a has an inner shape substantially the same as the outer shape of the first convex portion 41a. The first concave portion 42a has a circular shape in plan view. In addition, the first recessed portion 42a is not limited to a circular shape in plan view. For example, the first concave portion 42a may have a rectangular shape in plan view, and can be appropriately changed according to the shape of the pin.

The second recess 42b is a recess recessed in the thickness direction of the infrared reflecting plates 31, 32, 33, 34 so that the pin can be detachably inserted therein. The second concave portion 42b has an inner shape that is larger than the outer shape in the X direction of the second convex portion 41b, and has an inner shape that is substantially the same as the outer shape in the Y direction of the second convex portion 41b. The second recess 42b has an oval shape extending in the X direction in plan view. In addition, the shape of the second concave portion 42b is not limited to a shape having a longitudinal direction in the X direction in plan view. For example, the second recess 42b may have a rectangular shape extending in the X direction in a plan view, and can be appropriately changed according to the shape of the pin.

Note that the attachment/detachment structure 40 is not limited to including the protruding portion 41 protruding from the mounting surface 5a and the insertion portion 42 formed on the infrared reflecting portion 30 and into which the protruding portion 41 is inserted. For example, the attachment/detachment structure may include a convex portion protruding from the lower surface of the infrared reflecting portion 30 and a concave portion formed in the mounting surface 5a and into which the convex portion is inserted.

<Cooling mechanism>
As shown in FIG. 3, the substrate heating apparatus 1 further includes a cooling mechanism 50 capable of cooling the hot plate 5. As shown in FIG.
FIG. 9 is a top view showing the cooling mechanism 50. FIG. In addition, in FIG. 9, illustration of the protrusion part 41 grade|etc., is abbreviate|omitted for convenience.
As shown in FIG. 9, the cooling mechanism 50 is arranged inside the hot plate 5 and has a refrigerant passage portion 51 through which the refrigerant can pass. For example, the coolant is air. Note that the refrigerant is not limited to gas such as air. For example, the coolant may be liquid such as water.

The coolant passing portion 51 extends in one direction parallel to the mounting surface 5a, and has a plurality of cooling passages (for example, seven in this embodiment) arranged in a direction parallel to the mounting surface 5a and crossing the one direction. 51a and 51b. That is, the coolant passage portion 51 includes a plurality of cooling passages 51a and 51b extending in the X direction and arranged in the Y direction.

The plurality of cooling passages 51a and 51b include a plurality of (for example, four in this embodiment) first cooling passages 51a that allow the coolant to pass from one end side of the hot plate 5 to the other end side, and a plurality of (for example, three in this embodiment) second cooling passages 51b that pass from one end side to one end side. That is, the coolant passing through the first cooling passage 51a flows from the -X direction side of the hot plate 5 toward the +X direction side. The coolant passing through the second cooling passage 51b flows from the +X direction side of the hot plate 5 toward the -X direction side.

The first cooling passages 51a and the second cooling passages 51b are alternately arranged one by one in a direction parallel to the mounting surface 5a and intersecting the first direction. That is, the first cooling passages 51a and the second cooling passages 51b are alternately arranged one by one in the Y direction.

The coolant passing portion 51 further includes cooling manifolds 52 and 53 connected to a plurality of cooling passages 51a and 51b at one end side and the other end side of the hot plate 5, respectively. The cooling manifolds 52 and 53 are connected to the plurality of cooling passages 51a and 51b on the -X direction side of the hot plate 5, and to the plurality of cooling passages 51a and 51b on the +X direction side of the hot plate 5. and a second manifold 53 .

The first manifold 52 includes a first upstream connecting passage 52a extending in the Y direction so as to connect the upstream ends (−X direction ends) of the plurality of first cooling passages 51a, and the downstream ends of the plurality of second cooling passages 51b ( a second downstream connection path 52b extending in the Y direction so as to connect the -X direction end). The first manifold 52 includes a first piping section 54 having a first upstream piping 54a connected to the first upstream connecting path 52a and a second downstream piping 54b connected to the second downstream connecting path 52b. is provided.

The second manifold 53 includes a first downstream connecting passage 53a extending in the Y direction to connect the downstream ends of the plurality of first cooling passages 51a, and a Y direction connecting the upstream ends of the plurality of second cooling passages 51b. and a second upstream connection path 53b extending to the The second manifold 53 has a second piping section 55 having a first downstream piping 55a connected to the first downstream connecting path 53a and a second upstream piping 55b connected to the second upstream connecting path 53b. is provided.

For example, air is introduced into the internal space of the first upstream pipe 54a by a blower (not shown). As a result, the air from the blower passes through the first upstream pipe 54a and the first upstream connecting passage 52a, flows through the plurality of first cooling passages 51a in the +X direction, and then flows through the first downstream connecting passage 53a and the first cooling passage 51a. It is designed to be discharged to the outside through the first downstream pipe 55a.
On the other hand, air is introduced into the internal space of the second upstream pipe 55b by a blower (not shown). As a result, the air from the blower passes through the second upstream pipe 55b and the second upstream connecting passage 53b, flows through the plurality of second cooling passages 51b in the -X direction, and then flows through the second downstream connecting passage 52b, It is designed to be discharged to the outside through the second downstream pipe 54b.
The introduction of air is not limited to the use of a blower, and dry compressed air may be used. In FIGS. 3 and 8, illustration of the second downstream connection path 52b and the second upstream connection path 53b is omitted.

<Auxiliary heating unit>
The substrate heating apparatus 1 further includes an auxiliary heating section capable of selectively heating the cooling manifolds 52 and 53 .
FIG. 10 is a diagram for explaining an example of heating control in the hot plate 5. FIG.
As shown in FIG. 10, the hot plate 5 is provided with a plurality of (for example, three in this embodiment) heating regions H1, H2 and H3. Specifically, a first heating region H1 having a square shape in a plan view is arranged in the central portion of the hot plate 5 in the X direction. On the -X direction side of the hot plate 5 and near the first manifold 52, a second heating region H2 having a rectangular shape extending in the Y direction in a plan view is arranged. A third heating region H3 having substantially the same shape as the second heating region H2 is arranged on the +X direction side of the hot plate 5 and closer to the second manifold 53 . Note that the number of heating regions H1, H2, and H3 is not limited to three, and can be changed as appropriate.

The hot plate 5 can selectively heat at least one of the first heating area H1, the second heating area H2 and the third heating area H3. The controller 15 (see FIG. 1) controls the hot plate 5 to selectively heat at least one of the first heating region H1, the second heating region H2 and the third heating region H3. For example, when the temperature near the cooling manifolds 52 and 53 is likely to drop, the control unit 15 controls the hot plate 5 so that at least one of the first manifold 52 and the second manifold 53 near (that is, the hot plate 5 At least one of the second heating region H2 and the third heating region H3) is selectively heated. The second heating area H2 and the third heating area H3 in the hot plate 5 function as auxiliary heating units.

In addition, the area functioning as the auxiliary heating section is not limited to the second heating area H2 and the third heating area H3. For example, the auxiliary heating section may be a separate heater from the hot plate 5 . Also, the auxiliary heating unit may be a combination of the region and the heater, and can be changed as appropriate.

<Heating unit>
As shown in FIG. 2 , the heating unit 80 includes a chamber heating section 81 , a vacuum piping heating section 82 , a gas supply piping heating section 83 and a substrate loading/unloading section heating section 84 . For example, the heating unit 80 includes a flexible planar heating element as a heating member for each component. For example, the planar heating element is a rubber heater. The heating member is not limited to a rubber heater, and may be a hot plate or a combination of a rubber heater and a hot plate, and can be changed as appropriate.

The heating unit 80 can selectively heat at least one of the chamber heating section 81 , the vacuum piping heating section 82 , the gas supply piping heating section 83 and the substrate loading/unloading section heating section 84 . The control unit 15 (see FIG. 1) controls the heating unit 80 to selectively activate at least one of the chamber heating unit 81, the vacuum pipe heating unit 82, the gas supply pipe heating unit 83, and the substrate loading/unloading unit heating unit 84. let it heat up. For example, when the temperature of the inner surface of the vacuum pipe 3a is likely to drop, the control section 15 controls the heating unit 80 to selectively heat the vacuum pipe heating section 82 .

<Chamber heating section>
The chamber heating section 81 can heat at least part of the inner surface of the chamber 2 . In the embodiment, the chamber heating section 81 is arranged only on the peripheral wall 23 of the chamber 2 . The chamber heating part 81 is a planar heating element along the outer surface of the peripheral wall 23 of the chamber 2 . In the embodiment, the chamber heating section 81 covers the entire outer surface of the peripheral wall 23 of the chamber 2 . For example, by heating the peripheral wall 23 of the chamber 2 with the chamber heating part 81 covering the entire outer surface of the peripheral wall 23 of the chamber 2, the in-plane temperature uniformity of the inner surface of the peripheral wall 23 of the chamber 2 can be improved. can.

For example, the chamber heating unit 81 can heat the inner surface of the peripheral wall 23 of the chamber 2 so that the temperature is in the range of 40° C. or higher and 150° C. or lower. In the case where the substrate 10 is coated with the polyimide forming liquid, from the viewpoint of suppressing the adhesion of the sublimate to the inner surface of the peripheral wall 23 of the chamber 2, the temperature of the inner surface of the peripheral wall 23 of the chamber 2 should be 75° C. or higher and It is preferable to set the temperature in the range of 105°C or lower, and it is particularly preferable to set the temperature in the range of 90°C. The temperature of the inner surface of the peripheral wall 23 of the chamber 2 is not limited to the above range, and is a range that can suppress the fumes in the accommodation space 2S of the chamber 2 from being cooled on the inner surface of the peripheral wall 23 of the chamber 2 and becoming a sublimate. It should be set with

<Vacuum piping heating unit>
The vacuum pipe heating unit 82 can heat at least part of the inner surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating unit 82 is a planar heating element along the outer surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating section 82 covers the entire outer surface of the vacuum pipe 3a. For example, by heating the vacuum pipe 3a with the vacuum pipe heating part 82 covering the entire outer surface of the vacuum pipe 3a, the in-plane uniformity of the temperature of the inner surface of the vacuum pipe 3a can be improved.

<Gas supply pipe heating unit>
The gas supply pipe heating unit 83 can heat at least part of the inner surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating section 83 is a planar heating element along the outer surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating section 83 covers the entire outer surface of the gas supply pipe 4a. For example, by heating the gas supply pipe 4a with the gas supply pipe heating unit 83 covering the entire outer surface of the gas supply pipe 4a, the in-plane temperature uniformity of the inner surface of the gas supply pipe 4a can be improved. .

<Heat unit for loading/unloading substrate>
The substrate loading/unloading section heating section 84 can heat at least a portion of the substrate loading/unloading section 24 . In the embodiment, the substrate loading/unloading part heating part 84 is a planar heating element along the outer surface of the substrate loading/unloading part 24 . In the embodiment, the substrate loading/unloading section heating section 84 covers the entire outer surface of the substrate loading/unloading section 24 .

<Heat insulation material>
The heat insulating member 26 covers at least part of the chamber heating section 81 from the outside of the chamber 2 . In the embodiment, the heat insulating member 26 includes a chamber heat insulating member 26a, a vacuum pipe heat insulating member 26b, a gas supply pipe heat insulating member 26c, and a substrate loading/unloading portion heat insulating member 26d. For example, the heat insulating member 26 includes heat insulating material covering the heating portion of each component. For example, the heat insulating material is foam heat insulating material. In addition, the heat insulating material is not limited to the foam heat insulating material, and may be a fiber heat insulating material, or may have a structure in which air is interposed between multiple layers of plate glass, and can be changed as appropriate. .

In embodiments, the chamber heat insulating member 26 a covers the entire outer surface of the chamber heating section 81 . The vacuum pipe heat insulating member 26 b covers the entire outer surface of the vacuum pipe heating section 82 . The gas supply pipe heat insulating member 26 c covers the entire outer surface of the gas supply pipe heating section 83 . The substrate loading/unloading portion heat insulating member 26 d covers the entire outer surface of the substrate loading/unloading portion heating portion 84 .

<Cover member>
The cover member 27 covers at least part of the heat insulating member 26 from the outside of the chamber 2 . In the embodiment, the cover member 27 includes a chamber cover member 27a, a vacuum pipe cover member 27b, a gas supply pipe cover member 27c, and a substrate loading/unloading section cover member 27d. For example, cover member 27 includes a protective material that covers the heat insulating member of each component. For example, the protective material is made of metal. In addition, the protective material is not limited to metal, and may be made of resin, and can be changed as appropriate.

In embodiments, the chamber cover member 27a covers the entire outer surface of the chamber insulation member 26a. The vacuum pipe cover member 27b covers the entire outer surface of the vacuum pipe heat insulating member 26b. The gas supply pipe cover member 27c covers the entire outer surface of the gas supply pipe heat insulating member 26c. The board loading/unloading section cover member 27d covers the entire outer surface of the board loading/unloading section heat insulating member 26d.

<Glass structure>
As shown in FIG. 2 , the glass structure 90 (glass) includes a glass top plate 91 , a glass bottom plate 92 and a glass peripheral wall 93 . The glass structure 90 is provided so as to face each of the top plate 21 , the bottom plate 22 and the peripheral wall 23 of the chamber 2 . For example, the glass structure is made of neoceram. The glass structure 90 is not limited to neoceram, and may be made of quartz glass. Also, the glass structure 90 may be formed of a combination of neoceram and quartz glass, and can be changed as appropriate.

For example, the quartz content of the glass structure 90 is 50% or more. The higher the quartz content of the glass (approaching 100%), the higher the heat resistant temperature. From the viewpoint of improving the heat resistance temperature of the glass structure 90, the content of quartz is preferably 70% or more, more preferably 90% or more. Note that the content of quartz in the glass structure 90 is not limited to the above range, and the heating temperature of the substrate 10 can be set in a wide range. good.

For example, the infrared absorption rate of the glass structure 90 is 30% or more in the near-infrared wavelength region (1 μm or more and less than 2.5 μm) and 90% or more in the far-infrared wavelength region (2.5 μm or more and 5 μm or less). . The higher the infrared absorption rate of the glass (approaching 100%), the more the glass is heated by the infrared absorption. From the viewpoint of accelerating the heating of the glass structure 90, the absorptivity of near-infrared rays is preferably 50% or more, more preferably 70% or more. Further, it is preferable that the far-infrared absorptance is 95% or more. In addition, the infrared absorption rate of the glass structure 90 is not limited to the above range, and is within a range that can suppress the fume in the accommodation space 2S of the chamber 2 from being cooled on the surface of the glass structure 90 and becoming a sublimate. It should be set.

For example, the thickness t1 of the glass structure 90 is 0.5 mm or more and 10 mm or less. In FIG. 2, the thickness of the glass top plate 91 is shown as the thickness t1 of the glass structure 90. As shown in FIG. The glass top plate 91, the glass bottom plate 92, and the glass peripheral wall 93 that constitute the glass structure 90 have substantially the same thickness. When the thickness of the glass is less than 0.5 mm, it becomes difficult to absorb infrared rays and the heating of the glass is difficult to accelerate. If the thickness of the glass exceeds 10 mm, it becomes difficult to conduct heat and easily broken. Therefore, from the viewpoint of obtaining the glass structure 90 that is easily heated and is hard to break, the thickness t1 of the glass structure 90 is preferably set to a range of 1 mm or more and 5 mm or less, and particularly preferably set to 3 mm. . Note that the thickness t1 of the glass structure 90 is not limited to the range described above, and may be set within a range where adhesion of the sublimate to the glass structure 90 can be suppressed.

For example, the thermal expansion coefficient of the glass structure 90 is 15×10 ⁻⁷ /K or less in the range of 0° C. or higher and 750° C. or lower. From the viewpoint of reducing the dimensional change of the glass structure 90, the thermal expansion coefficient of the glass structure 90 is preferably 10×10 ⁻⁷ /K or less in the range of 0° C. or higher and 750° C. or lower, and 5×10 ^{− 7} /K or less is more preferable. Note that the coefficient of thermal expansion of the glass structure 90 is not limited to the above range, and may be set within a range where the glass structure 90 can be supported.

<Glass top plate>
The glass top plate 91 is arranged between the first surface 10 a (solution application surface) of the substrate 10 and the opposing surface 21 a (lower surface of the top plate 21 ) facing the first surface 10 a in the chamber 2 . The glass top plate 91 is arranged between the top plate 21 of the chamber 2 and the infrared heater 6 . The glass top plate 91 is supported by the top plate 21 of the chamber 2 . A support member (not shown) for the glass top plate 91 is provided between the glass top plate 91 and the top plate 21 . The glass top plate 91 is fixed at a fixed position near the top plate 21 inside the chamber 2 .

The glass top plate 91 is in the shape of a rectangular plate whose length extends in the X direction. The glass top plate 91 is arranged with a gap G1 from the peripheral wall 23 of the chamber 2 . The gap G1 is set to allow the thermal expansion of the glass top plate 91 . Specifically, the gap G1 is set to a size that can absorb the expansion of the glass top plate 91 in the X direction. Although not shown, the distance between the glass top plate 91 and the peripheral wall 23 in the Y direction is set to a size that can absorb the expansion of the glass top plate 91 in the Y direction.

<Glass bottom plate>
A glass bottom plate 92 is arranged on the upper surface of the bottom plate 22 of the chamber 2 . The glass bottom plate 92 is supported by the bottom plate 22 . The glass bottom plate 92 is fixed at a fixed position on the upper surface of the bottom plate 22 by a support member (not shown).

The glass bottom plate 92 has a rectangular plate shape having a longitudinal direction in the X direction. The glass bottom plate 92 is arranged with a gap G2 from the peripheral wall 23 of the chamber 2 . The gap G2 is set to allow the thermal expansion of the glass bottom plate 92 . Specifically, the gap G2 is set to a size that can absorb the expansion of the glass bottom plate 92 in the X direction. Although not shown, the distance between the glass bottom plate 92 and the peripheral wall 23 in the Y direction is set to a size capable of absorbing the expansion of the glass bottom plate 92 in the Y direction.

<Glass peripheral wall>
The glass peripheral wall 93 is arranged at a position facing the peripheral wall 23 of the chamber 2 . The glass peripheral wall 93 is supported by the peripheral wall 23 . The glass peripheral wall 93 is fixed at a fixed position near the peripheral wall 23 by a support member (not shown).

The glass peripheral wall 93 is arranged with a gap G2 from the peripheral wall 23 . The lower end of the glass peripheral wall 93 is connected to the outer peripheral edge of the glass bottom plate 92 . The glass peripheral wall 93 rises upward from the glass bottom plate 92 . The glass peripheral wall 93 has a rectangular frame shape along the outer shape of the glass bottom plate 92 . The upper portion of the glass peripheral wall 93 has an outer shape that avoids the substrate loading/unloading port 23a.

<Substrate heating method>
Next, a substrate heating method according to this embodiment will be described. In this embodiment, the substrate 10 is heated using the substrate heating apparatus 1 described above. Operations performed in each part of the substrate heating apparatus 1 are controlled by the control part 15 .

FIG. 11 is a diagram for explaining an example of the operation of the substrate heating apparatus 1 according to the first embodiment. FIG. 12 is an explanatory view of the operation of the substrate heating apparatus 1 according to the first embodiment following FIG. FIG. 13 is an explanatory view of the operation of the substrate heating apparatus 1 according to the first embodiment following FIG.

11 to 13, among the components of the substrate heating apparatus 1, the substrate loading/unloading section 24, the pressure adjustment section 3, the gas supply section 4, the gas diffusion section 60, the temperature detection section 9, the pressure detection section 14, Illustration of the gas liquefaction recovery unit 11, the cooling mechanism 50, the heating unit 80, the heat insulating member 26, the cover member 27, the glass structure 90, and the control unit 15 is omitted.

A substrate heating method according to this embodiment includes a housing step, a substrate heating step, and a chamber heating step.
As shown in FIG. 11 , in the accommodation step, the substrate 10 coated with the polyimide forming liquid is accommodated in the accommodation space 2</b>S inside the chamber 2 .

In the accommodation step, the substrate 10 is arranged on the transport rollers 8a. In the accommodation process, the hot plate 5 is positioned near the bottom plate 22 . In the accommodation process, the hot plate 5 and the substrate 10 are separated from each other to such an extent that the heat of the hot plate 5 is not transferred to the substrate 10 . In the accommodation process, the hot plate 5 is powered on. For example, the temperature of the hot plate 5 is approximately 200.degree. In the housing process, the infrared heater 6 is powered off.

After the accommodation process, the process proceeds to the substrate heating process. In the substrate heating step, the substrate 10 is heated at an appropriate temperature while appropriately controlling the pressure of the atmosphere in the accommodation space 2S for the substrate 10 . In the substrate heating step, the substrate 10 is heated using the hot plate 5 arranged on one side of the substrate 10 and the infrared heater 6 arranged on the other side of the substrate 10 .
The substrate heating process includes a first heating process, a second heating process and a third heating process.

In the first heating step, the atmosphere in the housing space 2S for the substrate 10 is set to 1000 Pa or higher. For example, in the first heating step, the atmosphere of the accommodation space 2S is set to atmospheric pressure (1013 hPa). In the first heating step, the pressure inside the chamber is increased so as to suppress the generation of sublimate during the process of forming the polyimide film. In addition, in the first heating step, the atmosphere in the housing space 2S can be set to 1000 Pa or higher and lower than the atmospheric pressure, or can be set to be higher than the atmospheric pressure.

In the first heating step, the hot plate 5 is used to heat the substrate 10 .
As shown in FIG. 12 , in the first heating step, the hot plate 5 is moved upward and the substrate 10 is placed on the hot plate side reflecting surface 30 a of the infrared reflecting section 30 .

Specifically, the substrate 10 is supported by the substrate supporting projections 35 (see FIG. 3) provided on the hot plate side reflecting surface 30a. As a result, the hot plate-side reflective surface 30 a comes close to the second surface 10 b of the substrate 10 , so that the heat of the hot plate 5 is transferred to the substrate 10 via the infrared reflective portion 30 . For example, in the first heating step, the temperature of the hot plate 5 is maintained at 200°C. Therefore, the substrate temperature can be increased up to 200.degree. On the other hand, in the first heating step, the infrared heater 6 remains off.

In addition, in the first heating step, the hot plate 5 is positioned within the passing portion 8h (see FIG. 1). For the sake of convenience, in FIG. 12, the hot plate 5 before movement (position during the accommodation process) is indicated by a two-dot chain line, and the hot plate 5 after movement (position during the first heating process) is indicated by a solid line.

In the first heating step, the substrate 10 is heated to a temperature of 25° C. or higher and 250° C. or lower while the atmosphere of the housing space 2S is set to 1000 Pa or higher (first heating control). As a result, the molecular chains of the polyimide forming liquid applied to the substrate 10 before imidization are oriented. For example, in the first heating step, the substrate 10 is heated to 200° C. with the atmosphere of the housing space 2S set to atmospheric pressure. For example, in the first heating step, the heating time of the substrate 10 is set to 0.5 min or more and 40 min or less.

After the first heating step, in the second heating step, the atmosphere in the housing space 2S is set to 1 Pa or more and less than 1000 Pa. For example, in the second heating step, the atmosphere in the accommodation space 2S is set to 1 Pa or more and 20 Pa or less. In the second heating step, the pressure in the chamber is lowered until the polyimide forming liquid applied to the substrate 10 volatilizes. In the second heating step, the atmosphere in the housing space 2S can be set to 500 Pa or less, 300 Pa or less, or 100 Pa or less.

In the second heating step, the oxygen concentration in the internal atmosphere of the chamber 2 is made as low as possible. For example, in the second heating step, the degree of vacuum in the chamber 2 is set to 20 Pa or less. Thereby, the oxygen concentration in the chamber 2 can be made 100 ppm or less.

In the second heating step, the substrate 10 is heated using an infrared heater 6 provided independently from the hot plate 5 .
As shown in FIG. 13 , in the second heating step, the hot plate 5 is moved further upward than the position in the first heating step to bring the substrate 10 closer to the infrared heater 6 .

For example, in the second heating step, the temperature of the hot plate 5 is maintained at 200°C. Also, in the second heating step, the power source of the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 600.degree. Therefore, the substrate temperature can be increased up to 600.degree. In the second heating process, the substrate 10 is closer to the infrared heater 6 than in the first heating process.

In the second heating step, the hot plate 5 is positioned above the conveying roller 8a (passing portion 8h shown in FIG. 1) and below the infrared heater 6. As shown in FIG. For convenience, in FIG. 13, the hot plate 5 before movement (position during the first heating process) is indicated by a two-dot chain line, and the hot plate 5 after movement (position during the second heating process) is indicated by a solid line.

In the second heating step, the substrate 10 is heated to a temperature exceeding the highest temperature in the first heating step and 550° C. or lower while the atmosphere in the accommodation space 2S is set to 1 Pa or more and less than 1000 Pa (second heating control). As a result, the molecular chains of the polyimide forming liquid applied to the substrate 10 before imidization are oriented. Alternatively, the polyimide forming liquid is imidized. For example, in the second heating step, the substrate 10 is heated to 300° C. while the atmosphere in the housing space 2S is set at 1 Pa or more and 20 Pa or less. In the second heating process, the substrate 10 is heated using the infrared heater 6 having a higher temperature rising rate than the hot plate 5 used in the first heating process. For example, in the second heating step, the temperature increase rate of the infrared heater 6 is set to 100° C./min or higher. For example, in the second heating step, the heating time of the substrate 10 is set to 2 minutes or more and 40 minutes or less.

After the second heating step, in the third heating step, the substrate 10 is heated to a temperature that is 50° C. or more higher than the maximum temperature reached in the second heating step while the atmosphere in the housing space 2S is set to 1 Pa or more and less than 1000 Pa. (third heating control). As a result, the molecular chains of the polyimide forming liquid applied to the substrate 10 are reoriented (the molecular chains are rearranged) during imidization. For example, in the third heating step, the substrate 10 is heated to 500° C. while the atmosphere in the housing space 2S is set at 1 Pa or more and 20 Pa or less. In the third heating step, the infrared heater 6 is used to heat the substrate 10 . In the third heating step, the heating time of the substrate 10 is set to 2 minutes or more and 40 minutes or less.

In the second heating process and the third heating process, the hot plate-side reflecting surface 30 a arranged between the hot plate 5 and the infrared heater 6 is used to reflect the infrared rays directed toward the hot plate 5 . Thereby, absorption of infrared rays by the hot plate 5 can be avoided. At least part of the infrared rays reflected by the hot plate-side reflecting surface 30 a is absorbed by the substrate 10 .

In addition, in the second heating process and the third heating process, the infrared rays are reflected by the chamber-side reflecting surface 2 a provided on the inner surface of the chamber 2 . Thereby, temperature uniformity in the chamber 2 can be improved. At least part of the infrared rays reflected by the chamber-side reflecting surface 2 a is absorbed by the substrate 10 .

In addition, the hot plate 5 is cooled in the second heating step and the third heating step. For example, in the second heating step and the third heating step, the refrigerant (air) is passed through the refrigerant passage portion 51 arranged inside the heating portion (see FIG. 9).

After the third heating process, a cooling process for cooling the substrate 10 is performed. For example, in the cooling step, the substrate 10 is cooled from the temperature of the third heating step to a temperature at which the substrate 10 can be transported while maintaining the atmosphere of the third heating step or the low-oxygen atmosphere. In the cooling process, the infrared heater 6 is turned off. For example, in the cooling step, the substrate 10 is cooled until the substrate temperature reaches 250° C. or lower. For example, in the cooling step, the time for cooling the substrate 10 is set to 1 minute or more and 5 minutes or less.

Through the above steps, the polyimide forming liquid applied to the substrate 10 is volatilized or imidized, and the molecular chains are rearranged during imidization of the polyimide forming liquid applied to the substrate 10, A polyimide film can be formed.

In the embodiment, the following chamber heating process is performed from the viewpoint of suppressing the fume in the housing space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 and becoming a sublimate.
At least part of the inner surface of the chamber 2 is heated in the chamber heating step. In the embodiment, in the chamber heating step, the inner surface of the peripheral wall 23 of the chamber 2 is heated using the chamber heating section 81 arranged on the peripheral wall 23 of the chamber 2 (see FIG. 2). For example, in the chamber heating process, the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is heated to a range of 40° C. or higher and 150° C. or lower. For example, the chamber heating process is always performed at least during the substrate heating process.

The substrate heating method of the embodiment further includes a vacuum pipe heating step, a gas supply pipe heating step, and a substrate loading/unloading portion heating step.
In the vacuum pipe heating step, at least part of the inner surface of the vacuum pipe 3a connected to the chamber 2 is heated. In the embodiment, in the vacuum pipe heating step, the inner surface of the vacuum pipe 3a is heated using the vacuum pipe heating unit 82 that covers the outer surface of the vacuum pipe 3a (see FIG. 2). For example, the vacuum line heating step is always performed at least during the substrate heating step.

In the gas supply pipe heating step, at least part of the inner surface of the gas supply pipe 4a is heated. In the embodiment, in the gas supply pipe heating step, the inner surface of the gas supply pipe 4a is heated using the gas supply pipe heating unit 83 that covers the outer surface of the gas supply pipe 4a (see FIG. 2). For example, the gas supply pipe heating step is always performed at least during the substrate heating step.

At least a portion of the substrate loading/unloading portion 24 can be heated in the substrate loading/unloading portion heating step. In the embodiment, in the substrate loading/unloading part heating step, the substrate loading/unloading part heating part 84 covering the outer surface of the substrate loading/unloading part 24 is used to heat the substrate loading/unloading part 24 (see FIG. 2). For example, the substrate loading/unloading unit heating process is always performed at least during the substrate heating process.

<Arrangement relationship between the mounting part of the glass top plate and the substrate>
Next, the positional relationship between the attachment portion of the glass top plate and the substrate according to the present embodiment will be described. In this embodiment, the glass top plate 91 is suspended from the top plate 21 of the chamber 2 by a support member (not shown) (see FIG. 2).

FIG. 14 is a diagram for explaining the positional relationship between the mounting portion 95 of the glass top plate 91 and the substrate 10 according to the first embodiment. FIG. 14 is a plan view (bottom view) of the glass top plate 91 viewed from the substrate 10 side.
As shown in FIG. 14, each of the glass top plate 91 and the substrate 10 has a rectangular plate shape extending in the X direction. The outer shape of the glass top plate 91 is larger than the outer shape of the substrate 10 . At the four corners of the glass top plate 91, mounting portions 95 for supporting members for suspending the glass top plate 91 are provided. The mounting portion 95 supports the glass top plate 91 by sandwiching it from above and below. The mounting portion 95 is provided on the upper portion of the chamber 2 (see FIG. 2). In a plan view, the mounting portion 95 is arranged at a position avoiding the substrate 10 . The mounting portions 95 are arranged outside the corners of the substrate 10 in a plan view.

<Arrangement Structure of Glass Peripheral Wall and Glass Bottom Wall>
Next, the arrangement structure of the glass peripheral wall and the glass bottom wall according to this embodiment will be described. In this embodiment, the glass peripheral wall 93 is integrally joined with the glass bottom wall 92 (see FIG. 2).

FIG. 15 is a diagram for explaining the arrangement structure of the glass peripheral wall 93 and the glass bottom plate 92 according to the first embodiment. In FIG. 15, illustration of the top plate 21 of the chamber 2 and the like is omitted.
As shown in FIG. 15, the glass peripheral wall 93 and the glass bottom plate 92 are integrally joined together to form a box shape that opens upward. Reference numeral 90A in FIG. 15 denotes a box-shaped body in which the glass peripheral wall 93 and the glass bottom plate 92 are integrated. The box-shaped body 90</b>A is sized so that it can be installed on the upper surface of the bottom plate 22 of the chamber 2 . An opening 93a is formed in a portion of the box-shaped body 90A facing the board loading/unloading port 23a.

As described above, according to the present embodiment, the substrate heating apparatus 1 is arranged in the chamber 2 in which the accommodation space 2S capable of accommodating the substrate 10 coated with the solution is formed, and in the accommodation space 2S. substrate heating units 5 and 6 capable of heating the substrate 10; a glass structure 90 disposed at least between the solution application surface 10a of the substrate 10 and the opposing surface 21a facing the application surface 10a in the chamber 2; By including, the following effects are achieved.
According to this configuration, by including at least the glass structure 90 disposed between the solution application surface 10a of the substrate 10 and the opposing surface 21a facing the application surface 10a in the chamber 2, the application surface of the substrate 10 is Since the glass structure 90 can block fumes (origin of sublimate) traveling from 10a to the opposing surface 21a of the chamber 2, adhesion of the sublimate to the opposing surface 21a (chamber interior) of the chamber 2 can be suppressed. can. In addition, since the heat resistance temperature (continuous use temperature) of glass is higher than that of resin, the heating temperature of substrate 10 can be set in a wider range, and the heating temperature of substrate 10 is less likely to be restricted. Therefore, the heating temperature of the substrate 10 is less likely to be restricted, and adhesion of the sublimate to the interior of the chamber can be suppressed. For example, if the glass structure 90 is made of neoceram, the heat resistance temperature of neoceram is 750° C. or higher, so the heating temperature of the substrate 10 can be set in a wider range.

Further, since the glass structure 90 has a quartz content of 50% or more, the heat resistant temperature of the glass structure 90 can be improved as compared with a case where the quartz content is less than 50%. Therefore, the heating temperature of the substrate 10 can be set in a wider range, and the heating temperature of the substrate 10 is less likely to be restricted.

In addition, the infrared absorption rate of the glass structure 90 is 30% or more in the near-infrared wavelength region (1 μm or more and less than 2.5 μm), and is 90% or more in the far-infrared wavelength region (2.5 μm or more and 5 μm or less). Therefore, the following effects are obtained.
According to this configuration, since the near-infrared absorptivity of the glass structure 90 is 30% or more, the absorption of near-infrared rays is lower than when the near-infrared absorptance of the glass structure 90 is less than 30%. can facilitate heating of the glass structure 90 by. In addition, since the far-infrared absorptivity of the glass structure 90 is 90% or more, compared with the case where the far-infrared absorptivity of the glass structure 90 is less than 90%, the glass structure due to far-infrared absorption is reduced. Heating of the body 90 can be facilitated. By accelerating the heating of the glass structure 90 in this way, fumes traveling from the application surface 10a of the substrate 10 to the opposing surface 21a of the chamber 2 are suppressed from being cooled on the surface of the glass structure 90 and becoming sublimates. be able to. Therefore, adhesion of the sublimate to the glass structure 90 can be suppressed.

Further, since the substrate 10 is a substrate coated with a solution for forming polyimide, the heating temperature of the substrate 10 is less likely to be restricted during the formation of polyimide, and adhesion of sublimate to the interior of the chamber is prevented. can be suppressed.

The chamber 2 includes a top plate 21 positioned above the substrate 10 and forming a facing surface 21a, a bottom plate 22 positioned below the substrate 10 and facing the top plate 21, and a peripheral wall surrounding the substrate 10. 23, and the glass structure 90 is provided so as to face the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2, respectively, so that the following effects are achieved.
According to this configuration, the glass structure 90 can block the fumes traveling from the application surface 10a of the substrate 10 to the top plate 21, the bottom plate 22, and the peripheral wall 23 of the chamber 2. Adhesion of sublimate to each of 22 and peripheral wall 23 can be suppressed.

Moreover, the thickness t1 of the glass structure 90 is 0.5 mm or more and 10 mm or less, so that the following effects can be obtained.
According to this configuration, since the thickness t1 of the glass structure 90 is 0.5 mm or more, the glass structure 90 emits less infrared light than when the thickness t1 of the glass structure 90 is less than 0.5 mm. is easily absorbed, the heating of the glass structure 90 is facilitated, and adhesion of the sublimate to the glass structure 90 is easily suppressed. In addition, when the thickness t1 of the glass structure 90 is 10 mm or less, the glass structure 90 is less likely to break because heat can be transferred more easily than when the thickness t1 of the glass structure 90 exceeds 10 mm. .

Further, the thermal expansion coefficient of the glass structure 90 is 15×10 ⁻⁷ /K or less in the range of 0° C. or higher and 750° C. or lower, so that the following effects can be obtained.
Compared to the case where the thermal expansion coefficient of the glass structure 90 exceeds 15×10 ⁻⁷ /K in the range of 0° C. to 750° C., the dimensional change of the glass structure 90 is small, so that the glass structure 90 is supported. It's easy to do. For example, when the glass structure 90 is supported by being sandwiched between support members, it is possible to suppress the generation of foreign matter due to rubbing between the glass structure 90 and the support members.

Further, the substrate heating units 5 and 6 include an infrared heater 6 supported by the top plate 21 of the chamber 2, and the glass top plate 91 is arranged between the top plate 21 and the infrared heater 6, It has the following effects.
According to this configuration, compared with the case where the glass top plate 91 is arranged between the substrate 10 and the infrared heater 6, the infrared rays traveling from the infrared heater 6 to the substrate 10 are less likely to be blocked by the glass top plate 91 (infrared rays tend to face the substrate 10 directly), which facilitates heating of the substrate 10 . By the way, in the case of the method of heating the substrate by circulating hot air in an oven, there is a possibility that the circulation of the hot air may cause foreign matter to be blown up in the space for accommodating the substrate. On the other hand, according to this configuration, the substrate 10 can be heated while the atmosphere of the accommodation space 2S is decompressed, so the risk of foreign matter being stirred up into the accommodation space 2S can be reduced. Therefore, it is suitable for suppressing adhesion of foreign matter to the inner surface of the chamber 2 or the substrate 10 .

In addition, a mounting portion 95 for mounting the glass top plate 91 to the chamber 2 is provided on the upper portion of the chamber 2, and the mounting portion 95 is arranged at a position avoiding the substrate 10 in a plan view. Effective.
According to this configuration, compared to the case where the mounting portion 95 is arranged at a position overlapping the substrate 10 in a plan view, even if foreign matter is generated due to rubbing between the glass top plate 91 and the mounting portion 95, the foreign matter can be removed from the substrate 10. can be prevented from falling into

The substrate heating units 5 and 6 include a hot plate 5 arranged on one surface side of the substrate 10, an infrared heater 6 arranged on the other surface side of the substrate 10 and capable of heating the substrate 10 with infrared rays, By including, the following effects are produced.
According to this configuration, since the infrared heater 6 is arranged on the other surface side of the substrate 10, the heat emitted from the infrared heater 6 is transmitted from the other surface side of the substrate 10 toward the one surface side. Therefore, the heating by the hot plate 5 and the heating by the infrared heater 6 are combined to heat the substrate 10 more effectively. In addition, the hot plate 5 arranged on one surface side of the substrate 10 can make the heating temperature of the substrate 10 uniform within the surface of the substrate 10, so that the film characteristics can be improved. For example, by heating the substrate 10 with one surface of the hot plate 5 and the second surface 10b of the substrate 10 in contact with each other, the in-plane uniformity of the heating temperature of the substrate 10 can be improved.

At least part of the inner surface of the chamber 2 serves as the chamber-side reflective surface 2a that reflects infrared rays, thereby providing the following effects. At least part of the infrared rays reflected by the chamber-side reflecting surface 2a is absorbed by the substrate 10, so that heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced in consideration of the temperature rise of the substrate 10 due to the infrared rays reflected by the chamber-side reflecting surface 2a.

In addition, since the hot plate 5 can heat the substrate 10 in the range of 20° C. or higher and 300° C. or lower, the removal of the solvent from the polyimide forming liquid applied to the substrate 10 and the pre-curing of the polyimide forming liquid can be stabilized. can be done by In addition, since the infrared heater 6 can heat the substrate 10 in the range of 200° C. or higher and 600° C. or lower, the polyimide forming liquid applied to the substrate 10 can be cured more stably. In addition, the rearrangement of the molecular chains can be stably performed during the imidization of the polyimide-forming liquid, and the film properties can be further improved.

Further, the hot plate 5 includes an infrared reflecting portion 30 having a hot plate-side reflecting surface 30a that is arranged between the hot plate 5 and the infrared heater 6 and reflects infrared rays directed toward the hot plate 5. By including the mounting surface 5a on which the 30 can be mounted, the following effects can be obtained.
According to this configuration, since the hot plate side reflecting surface 30a is disposed between the hot plate 5 and the infrared heater 6 and reflects the infrared rays directed toward the hot plate 5, the hot plate 5 absorbs the infrared rays. can be avoided, it is possible to suppress the temperature rise of the hot plate 5 due to infrared rays. Therefore, it is not necessary to consider the cooling time of the hot plate 5 accompanying the temperature rise of the hot plate 5 by infrared rays. Therefore, the tact time required for cooling the hot plate 5 can be shortened. In addition, since at least part of the infrared rays reflected by the hot plate-side reflecting surface 30a is absorbed by the substrate 10, the heating of the substrate 10 can be promoted. On the other hand, the output of the infrared heater 6 can be reduced in consideration of the temperature rise of the substrate 10 due to the infrared rays reflected by the hot plate side reflecting surface 30a. In addition, since the hot plate 5 includes the mounting surface 5a on which the infrared reflecting section 30 can be mounted, when the atmosphere of the accommodation space 2S is reduced to a vacuum state, the mounting surface 5a of the hot plate 5 and the Vacuum heat insulation between the infrared reflecting section 30 can be achieved. That is, the gap at the interface between the mounting surface 5a and the infrared reflecting section 30 can function as a heat insulating layer. Therefore, it is possible to suppress the temperature rise of the hot plate 5 due to the infrared rays. On the other hand, when nitrogen is supplied ( _N2 purge) to the housing space 2S, the vacuum insulation between the mounting surface 5a and the infrared reflecting section 30 can be released. Therefore, when the temperature of the hot plate 5 is decreasing, it can be estimated that the temperature of the infrared reflecting section 30 is also decreasing.

In addition, the polyimide forming liquid is applied only to the first surface 10a of the substrate 10, and the hot plate 5 is arranged on the side of the second surface 10b opposite to the first surface 10a of the substrate 10. , has the following effects. Since the heat emitted from the hot plate 5 is transmitted from the second surface 10b side of the substrate 10 toward the first surface 10a side, the substrate 10 can be effectively heated. In addition, while the substrate 10 is being heated by the hot plate 5, solvent removal of the polyimide forming liquid applied to the substrate 10, pre-curing of the polyimide forming liquid, degassing during film formation, and the like are efficiently performed. be able to.

Moreover, since both the hot plate 5 and the infrared heater 6 can heat the substrate 10 in stages, the following effects can be obtained. Compared to the case where the hot plate 5 and the infrared heater 6 can only heat the substrate 10 at a constant temperature, the substrate 10 is efficiently heated so as to match the curing conditions of the polyimide forming liquid applied to the substrate 10. can do. For example, the polyimide forming liquid applied to the substrate 10 can be dried step by step and cured satisfactorily.

In addition, by including the position adjustment unit 7 capable of adjusting the relative positions of the hot plate 5 and the infrared heater 6 and the substrate 10, the heating temperature of the substrate 10 can be adjusted as compared with the case where the position adjustment unit 7 is not provided. becomes easier. For example, when the heating temperature of the substrate 10 is increased, the hot plate 5 and the infrared heater 6 are brought close to the substrate 10, and when the heating temperature of the substrate 10 is decreased, the hot plate 5 and the infrared heater 6 are brought close to the substrate 10. can be separated. Therefore, it becomes easier to heat the substrate 10 in stages.

In addition, the position adjusting section 7 includes a moving section 7a that allows the substrate 10 to move between the hot plate 5 and the infrared heater 6, thereby providing the following effects. By moving the substrate 10 between the hot plate 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted while at least one of the hot plate 5 and the infrared heater 6 is arranged at a fixed position. Therefore, since it is not necessary to separately provide a device for moving at least one of the hot plate 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted with a simple configuration.

Between the hot plate 5 and the infrared heater 6, there is provided a transporting section 8 for transporting the substrate 10. The transporting section 8 is formed with a passing section 8h for allowing the moving section 7a to pass through. By doing so, the following effects are achieved. When moving the substrate 10 between the hot plate 5 and the infrared heater 6 , the substrate 10 can pass through the passing portion 8 h , so there is no need to move the substrate 10 while bypassing the transport portion 8 . Therefore, since it is not necessary to separately provide a device for moving the substrate 10 while bypassing the transport unit 8, the substrate 10 can be moved smoothly with a simple configuration.

Moreover, by including the temperature detection unit 9 capable of detecting the temperature of the substrate 10, the temperature of the substrate 10 can be grasped in real time. For example, by heating the substrate 10 based on the detection result of the temperature detection unit 9, it is possible to suppress the deviation of the temperature of the substrate 10 from the target value.

Further, since the substrate 10 and the substrate heating units 5 and 6 are accommodated in the common chamber 2 , the heating treatment of the substrate 10 by the substrate heating units 5 and 6 can be collectively performed in the common chamber 2 . For example, the heat treatment by the hot plate 5 and the heat treatment by the infrared heater 6 can be collectively performed on the substrate 10 in the common chamber 2 . That is, unlike the case where the hot plate and the infrared heater are accommodated in different chambers, it does not take time to transfer the substrate between two different chambers. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. Also, compared to the case of having two different chambers, the entire device can be made smaller.

(Second embodiment)
Next, a second embodiment of the invention will be described with reference to FIGS. 16 to 19. FIG.
In the second embodiment, the configuration of the position adjusting section 207 is particularly different from the first embodiment. In FIGS. 16 to 19, the same reference numerals are assigned to the same configurations as in the first embodiment, and detailed description thereof will be omitted.
FIG. 16 is a diagram corresponding to FIG. 2, including cross sections of the heating unit 80, the heat insulating member 26, the cover member 27, and the glass structure 90 in the substrate heating apparatus 201 according to the second embodiment.

<Position adjuster>
As shown in FIG. 16 , the position adjusting section 207 includes a housing section 270 , a moving section 275 and a driving section 279 .
The housing portion 270 is arranged below the chamber 2 . The accommodating portion 270 can accommodate the moving portion 275 and the driving portion 279 . The housing portion 270 is formed in a rectangular parallelepiped box shape. Specifically, the housing portion 270 includes a rectangular plate-shaped first support plate 271 , a rectangular plate-shaped second support plate 272 facing the first support plate 271 , the first support plate 271 and the second support plate 272 . and a surrounding plate 273 that surrounds and surrounds the moving portion 275 and the driving portion 279 . Note that the shroud 273 may not be provided. In other words, the position adjusting section 207 only has to include at least the first support plate 271 , the moving section 275 and the driving section 279 . For example, an exterior cover that covers the entire device may be provided.

A peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2 . The first support plate 271 also functions as the bottom plate of the chamber 2 . A hot plate 205 is arranged on the first support plate 271 . Specifically, the hot plate 205 is supported by the first support plate 271 inside the chamber 2 .

The shroud 273 and the peripheral wall 23 are continuously connected vertically. The chamber 2 is configured to accommodate the substrate 10 in a closed space. For example, the airtightness in the chamber 2 can be improved by connecting the connecting portions of the top plate 21, the first support plate 271 as the bottom plate, and the peripheral wall 23 by welding or the like without gaps.

The moving part 275 includes a pin 276 , an expansion tube 277 and a base 278 .
The pin 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a rod-shaped member that extends vertically. The tip (upper end) of the pin 276 can contact the second surface 10 b of the substrate 10 and can be separated from the second surface 10 b of the substrate 10 .

A plurality of pins 276 are provided at intervals in the direction (X direction and Y direction) parallel to the second surface 10b. A plurality of pins 276 are formed to have approximately the same length. Tips of the plurality of pins 276 are arranged in a plane (in the XY plane) parallel to the second surface 10b.

The expansion tube 277 is provided between the first support plate 271 and the base 278 . The expandable tube 277 is a tubular member that covers the pin 276 so as to surround it and extends vertically. The expandable tube 277 is vertically expandable between the first support plate 271 and the base 278 . For example, telescopic tube 277 is a vacuum bellows.

A plurality of expansion tubes 277 are provided in the same number as the plurality of pins 276 . The tips (upper ends) of the plurality of expandable tubes 277 are fixed to the first support plate 271 . Specifically, the first support plate 271 is formed with a plurality of insertion holes 271h opening the first support plate 271 in the thickness direction. The inner diameter of each insertion hole 271h is approximately the same size as the outer diameter of each telescopic tube 277 . For example, the tip of each telescopic tube 277 is fitted and fixed to each insertion hole 271h of the first support plate 271 .

The base 278 is a plate-like member facing the first support plate 271 . The upper surface of the base 278 forms a flat surface along the second surface 10b of the substrate 10. As shown in FIG. Base ends (lower ends) of the plurality of pins 276 and base ends (lower ends) of the plurality of expandable tubes 277 are fixed to the upper surface of the base 278 .

The hot plate 205 can be inserted through the tips of the plurality of pins 276 . In the hot plate 205, the hot plate 205 is placed at a position overlapping each insertion hole 271h (internal space of each telescopic tube 277) of the first support plate 271 in the direction normal to the second surface 10b. A plurality of insertion holes 205h that open in the direction (the thickness direction of the hot plate 205) are formed.

The tips of the plurality of pins 276 can be inserted through the infrared reflecting portion 230 . The infrared reflecting portion 230 is positioned on the second surface 10b at a position overlapping each insertion hole 271h (internal space of each expansion tube 277) of the first support plate 271 in the normal direction of the second surface 10b. A plurality of insertion holes 230h that open in the normal direction (thickness direction of the infrared reflecting plate) are formed.

The tips of the plurality of pins 276 can come into contact with the second surface 10b of the substrate 10 via the inner space of each expansion tube 277, each insertion hole 205h of the hot plate 205, and each insertion hole 230h of the infrared reflecting section 230. It is Therefore, the tips of the plurality of pins 276 support the substrate 10 parallel to the XY plane. The plurality of pins 276 move in the Z direction inside the chamber 2 while supporting the substrate 10 accommodated in the chamber 2 (see FIGS. 17 to 19).

The driving part 279 is arranged inside the housing part 270 outside the chamber 2 . Therefore, even if particles are generated as the drive unit 279 is driven, the particles can be prevented from entering the chamber 2 by making the chamber 2 a closed space.

<Substrate heating method>
Next, a substrate heating method according to this embodiment will be described. In this embodiment, the substrate 10 is heated using the substrate heating apparatus 201 described above. Operations performed in each part of the substrate heating apparatus 201 are controlled by the control part 15 . In addition, the detailed description is abbreviate|omitted about the process similar to 1st embodiment.

FIG. 17 is a diagram for explaining an example of the operation of the substrate heating device 201 according to the second embodiment. FIG. 18 is an explanatory view of the operation of the substrate heating apparatus 201 according to the second embodiment following FIG. FIG. 19 is an explanatory view of the operation of the substrate heating apparatus 201 according to the second embodiment following FIG.

17 to 19, among the constituent elements of the substrate heating apparatus 201, the substrate carry-in/out unit 24, the pressure adjustment unit 3, the gas supply unit 4, the gas diffusion unit 60, the temperature detection unit 9, the pressure detection unit 14, Illustration of the gas liquefaction recovery unit 11, the cooling mechanism 50, the heating unit 80, the heat insulating member 26, the cover member 27, the glass structure 90, and the control unit 15 is omitted.

A substrate heating method according to this embodiment includes a housing step, a substrate heating step, and a chamber heating step.
As shown in FIG. 17 , in the accommodation step, the substrate 10 coated with the polyimide forming liquid is accommodated in the accommodation space 2</b>S inside the chamber 2 .

In the accommodation process, the substrate 10 is separated from the hot plate 205 . Specifically, the tips of the plurality of pins 276 are brought into contact with the second surface 10b of the substrate 10 through the inner space of each expansion tube 277, each insertion hole 205h of the hot plate 205, and each insertion hole 230h of the infrared reflecting portion 230. In addition, the substrate 10 is separated from the hot plate 205 by raising the substrate 10 . In the accommodation process, the hot plate 205 and the substrate 10 are separated to such an extent that the heat of the hot plate 205 is not transferred to the substrate 10 . In the housing process, the hot plate 205 is powered on. In the housing process, the infrared heater 6 is powered off.

After the accommodation process, the process proceeds to the substrate heating process. In the substrate heating step, the substrate 10 is heated using the hot plate 205 arranged on one side of the substrate 10 and the infrared heater 6 arranged on the other side of the substrate 10 .
The substrate heating process includes a first heating process, a second heating process and a third heating process.

In the first heating step, the hot plate 205 is used to heat the substrate 10 .
As shown in FIG. 18, in the first heating step, the tips of the plurality of pins 276 are moved away from the second surface 10b of the substrate 10, so that the substrate 10 is placed on the hot plate-side reflecting surface 230a of the infrared reflecting section 230. Let Specifically, the substrate 10 is supported by a substrate supporting projection (not shown) provided on the hot plate-side reflecting surface 230a. As a result, the hot plate side reflective surface 230a is close to the second surface 10b of the substrate 10, so that the heat of the hot plate 205 is transmitted to the substrate 10 via the infrared reflective portion 230. FIG. For example, in the first heating step, the infrared heater 6 remains off.

After the first heating process, in the second heating process, the substrate 10 is heated using the infrared heater 6 provided separately from the hot plate 205 .
As shown in FIG. 19, in the second heating step, the substrate 10 is brought closer to the infrared heater 6 by further raising the substrate 10 from the position in the first heating step. In the second heating step, the infrared heater 6 is powered on. In the second heating process, the substrate 10 is closer to the infrared heater 6 than in the first heating process.

After that, by going through the same steps as in the first embodiment, the polyimide forming liquid applied to the substrate 10 is volatilized or imidized, and the molecules at the time of imidization of the polyimide forming liquid applied to the substrate 10 Chain rearrangement can occur to form a polyimide film.
Further, from the viewpoint of suppressing the fume in the housing space 2S of the chamber 2 from being cooled on the inner surface of the chamber 2 and becoming a sublimate, the same chamber heating step as in the first embodiment is performed.

As described above, according to this embodiment, the moving part 275 includes a plurality of pins 276 capable of supporting the second surface 10b of the substrate 10 and movable in the normal direction of the second surface 10b. is arranged in a plane parallel to the second surface 10b, the following effects can be obtained. Since the substrate 10 can be heated while being stably supported, the polyimide forming liquid applied to the substrate 10 can be stably cured.

In addition, the hot plate 205 is formed with a plurality of insertion holes 205h that open the hot plate 205 in the normal direction of the second surface 10b, and the tip of each pin 276 passes through each insertion hole 205h to the second surface. The following effects are achieved by being able to abut against 10b. Since the substrate 10 can be transferred between the plurality of pins 276 and the hot plate 205 in a short time, the heating temperature of the substrate 10 can be adjusted efficiently.

It should be noted that the shapes, combinations, etc., of the constituent members shown in the above examples are merely examples, and can be variously changed based on design requirements and the like.
For example, in the above embodiments, the substrate heating unit includes a hot plate arranged on one side of the substrate and an infrared heater arranged on the other side of the substrate and capable of heating the substrate with infrared rays. However, it is not limited to this. For example, the substrate heating section may include only a hot plate arranged on one side of the substrate, or only an infrared heater arranged on the other side of the substrate. That is, the substrate heating section may be arranged on at least one of one side and the other side of the substrate.

Moreover, in the above-described embodiment, the glass structure 90 is provided so as to face each of the top plate 21, the bottom plate 22 and the peripheral wall 23 of the chamber 2, but the present invention is not limited to this. For example, the glass structure may be provided so as to face only the top plate 21 of the chamber 2 . In other words, the substrate heating apparatus may include at least glass disposed between the solution application surface 10a of the substrate 10 and the opposing surface 21a of the chamber 2 facing the application surface 10a. The glass may be provided on at least part of the top plate 21 , the bottom plate 22 and the peripheral wall 23 of the chamber 2 .

Further, in the above-described embodiment, the glass top plate 91 is arranged with a gap from the top plate 21 of the chamber 2, but the arrangement is not limited to this. For example, the glass top plate 91 may be in contact with the top plate 21 . Moreover, although the glass peripheral wall 93 is spaced apart from the peripheral wall 23 of the chamber 2, the arrangement is not limited to this. For example, the glass peripheral wall 93 may abut against the peripheral wall 23 .

Moreover, in the above embodiment, the glass structure 90 is formed by combining glass plates, but the present invention is not limited to this. For example, the glass structure may be a film coated on the inner surface of the chamber.

Moreover, in the above embodiments, the substrate heating method includes the accommodation step, the substrate heating step, and the chamber heating step, but is not limited to this. For example, the substrate heating method may further include a preheating step. In the preheating step, before the first heating step (specifically, before the housing step), the chamber is preheated to a temperature of 100° C. or higher and 250° C. or lower (preheating control). According to this method, since the heating conditions in the first heating step can be immediately changed, the first heating step can be stably performed in a short time.
For example, in the preheating step, the chamber may be preheated to the maximum temperature (eg, 200° C.) in the first heating step.

Further, in the above embodiment, the chamber heating section is arranged only on the peripheral wall of the chamber, but the present invention is not limited to this. For example, the chamber heating units may be arranged on the top and bottom plates of the chamber in addition to the peripheral walls of the chamber. That is, the chamber heating section only needs to be able to heat at least part of the inner surface of the chamber.

Moreover, in the above-described embodiment, the infrared reflective portion having a reflective surface is provided, but the present invention is not limited to this. For example, the upper surface of the hot plate may be a reflecting surface that reflects infrared rays without providing an infrared reflecting portion.

Also, in the above embodiments, the substrate, hot plate, and infrared heater are housed in a common chamber, but the present invention is not limited to this. For example, the hotplate and infrared heater may be housed in different chambers.

Moreover, in the above embodiments, both the hot plate and the infrared heater can heat the substrate step by step, but the present invention is not limited to this. For example, at least one of a hot plate and an infrared heater may be capable of heating the substrate stepwise. Also, both the hot plate and the infrared heater may be capable of heating the substrate only at a certain temperature.

Further, in the above embodiment, a plurality of transport rollers are used as the transport unit, but the present invention is not limited to this. For example, a belt conveyor may be used as the transport unit, or a linear motor actuator may be used. For example, belt conveyors and linear motor actuators may be made extendable in the X direction. Thereby, the transport distance of the substrate in the X direction can be adjusted.

In addition, when adopting a structure other than the structure shown in FIG. There may be. As a result, the in-plane uniformity of the heating temperature of the substrate can be further improved as compared with the case where the plan view size of the hot plate is smaller than the plan view size of the substrate.

In addition, in the above-described embodiment, the hot plate is powered on and the infrared heater is powered off in the housing step and the first heating step, but the present invention is not limited to this. For example, in the housing step and the first heating step, the hot plate and the infrared heater may be powered on.

In addition, in the above-described first embodiment, the example in which the substrate heating process includes the three heating processes of the first heating process, the second heating process, and the third heating process is given, but the present invention is not limited to this. For example, the substrate heating process may include only two heating processes, the first heating process and the second heating process, or may include four or more heating processes.

In addition, in the above-described second embodiment, the tips of the plurality of pins can be inserted through the infrared reflective portion (that is, the infrared reflective portion is formed with a plurality of insertion holes), but the present invention is not limited to this. . For example, the tips of a plurality of pins may be made impermeable to the infrared reflecting section. That is, the infrared reflective portion may not have an insertion hole. In this case, the tips of the plurality of pins can come into contact with the rear surface of the infrared reflecting section through the internal spaces of the expandable tubes and the insertion holes of the hot plate. Therefore, the tips of the plurality of pins support the infrared reflecting section parallel to the XY plane. The plurality of pins move in the Z direction inside the chamber while supporting the substrate accommodated in the chamber via the infrared reflector.

Further, the present invention may be applied to a substrate processing system including the substrate heating apparatus of the above embodiment. For example, a substrate processing system is a system that is incorporated into a manufacturing line in a factory or the like and used to form a thin film on a predetermined region of a substrate. Although not shown, the substrate processing system includes, for example, a substrate processing unit including the substrate heating apparatus, and a unit to which loading cassettes containing unprocessed substrates are supplied and empty loading cassettes are collected. A substrate carrying-in unit, a substrate carrying-out unit which is a unit in which the carrying-out cassette containing the processed substrates is collected and an empty carrying-out cassette is supplied, and a carrying-in unit between the substrate processing unit and the substrate carrying-in unit. A transport unit that transports cassettes and transports unloading cassettes between the substrate processing unit and the substrate unloading unit, and a control unit that performs integrated control of each unit are provided.
According to this configuration, by including the substrate heating apparatus, the substrate heating temperature is less likely to be restricted in the substrate processing system, and adhesion of sublimate to the interior of the chamber can be suppressed.

In addition, each component described as an embodiment or a modification thereof in the above can be appropriately combined without departing from the scope of the present invention, and some of the combined components can be omitted as appropriate.

DESCRIPTION OF SYMBOLS 1,201... Substrate heating apparatus 2... Chamber 2S... Accommodating space 5,205... Hot plate (substrate heating part) 6... Infrared heater (substrate heating part) 10... Substrate 10a... First surface (application surface) 21... Top plate 22... Bottom plate 23... Peripheral wall 21a... Opposite surface 90... Glass structure (glass) 91... Glass top plate (glass) 92... Glass bottom plate (glass) 93... Glass peripheral wall (glass) 95... Mounting part t1... Glass structure thickness (glass thickness)

Claims (9)

a chamber having an accommodating space inside which is capable of accommodating the substrate coated with the solution;
a substrate heating unit arranged in the housing space and capable of heating the substrate;
a glass disposed at least between the surface of the substrate to which the solution is applied and an opposing surface facing the application surface in the chamber;
The upper part of the chamber is provided with a mounting portion for mounting the glass to the chamber,
In a plan view, the mounting portion is arranged at a position avoiding the substrate,
The glass peripheral wall and the glass bottom plate provided on the peripheral wall and the bottom plate of the chamber in the glass are integrally joined to each other to form a box shape that opens upward.
Substrate heating device. The substrate heating apparatus according to claim 1, wherein the glass has a quartz content of 50% or more. The infrared absorption rate of the glass is 30% or more in the near infrared wavelength region (1 μm or more and less than 2.5 μm), and 90% or more in the far infrared wavelength region (2.5 μm or more and 5 μm or less). 3. The substrate heating apparatus according to 2. The substrate heating apparatus according to any one of claims 1 to 3, wherein the substrate is a substrate coated with a solution for forming polyimide. The chamber is
a top plate positioned above the substrate and forming the facing surface;
a bottom plate positioned below the substrate and facing the top plate;
a peripheral wall surrounding the substrate,
The substrate heating apparatus according to any one of claims 1 to 4, wherein the glass is provided on each of the top plate, the bottom plate and the peripheral wall of the chamber. The substrate heating apparatus according to any one of claims 1 to 5, wherein the glass has a thickness of 0.5 mm or more and 10 mm or less. The substrate heating apparatus according to any one of claims 1 to 6, wherein the thermal expansion coefficient of the glass is 15 x ^10-7 /K or less in the range of 0°C to 750°C. The substrate heating unit includes an infrared heater supported by the top plate of the chamber,
The substrate heating apparatus according to any one of claims 1 to 7, wherein the glass is arranged between the top plate and the infrared heater. A substrate processing system comprising the substrate heating apparatus according to claim 1 .

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