JP2020026374A5 - - Google Patents

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JP2020026374A5
JP2020026374A5 JP2018152319A JP2018152319A JP2020026374A5 JP 2020026374 A5 JP2020026374 A5 JP 2020026374A5 JP 2018152319 A JP2018152319 A JP 2018152319A JP 2018152319 A JP2018152319 A JP 2018152319A JP 2020026374 A5 JP2020026374 A5 JP 2020026374A5
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measured
represent
crystal
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JP7149767B2 (ja
JP2020026374A (ja
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JP2018152319A 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座 Active JP7149767B2 (ja)

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JP2018152319A JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座
PCT/JP2019/031803 WO2020036167A1 (ja) 2018-08-13 2019-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

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JP2018152319A JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

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JP2020026374A JP2020026374A (ja) 2020-02-20
JP2020026374A5 true JP2020026374A5 (enrdf_load_stackoverflow) 2021-07-26
JP7149767B2 JP7149767B2 (ja) 2022-10-07

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JP (1) JP7149767B2 (enrdf_load_stackoverflow)
WO (1) WO2020036167A1 (enrdf_load_stackoverflow)

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JP7433586B2 (ja) * 2018-08-13 2024-02-20 株式会社レゾナック ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶
EP4060098A1 (de) * 2021-03-19 2022-09-21 SiCrystal GmbH Herstellungsverfahren für einen sic-volumeneinkristall inhomogener schraubenversetzungsverteilung und sic-substrat

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JPS6373104A (ja) * 1986-09-17 1988-04-02 Toshiba Corp 格子彎曲測定用ｘ線回折装置
JPH07101679B2 (ja) * 1988-11-01 1995-11-01 三菱電機株式会社 電子デバイス用ウエハ，ウエハ用棒状基材および電子デバイス
JP3239884B2 (ja) * 1989-12-12 2001-12-17 ソニー株式会社 半導体基板の製造方法
CN102543718A (zh) 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP6241254B2 (ja) 2013-12-17 2017-12-06 住友電気工業株式会社 単結晶の製造方法
JP6390628B2 (ja) * 2016-01-12 2018-09-19 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置
JP7433586B2 (ja) 2018-08-13 2024-02-20 株式会社レゾナック ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶

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