JP2020025078A5

JP2020025078A5 -

Info

Publication number: JP2020025078A5
Application number: JP2019097691A
Authority: JP
Filing date: 2019-05-24
Publication date: 2022-05-31
Anticipated expiration: 2039-05-24

Claims

(A) A step of forming a recess in the first layer by etching a substrate including a base layer and a first layer formed on the base layer.
(B) When it is determined that the concave portion satisfies the predetermined conditions, a step of forming a first film on the bottom surface of the concave portion on which the predetermined gas type is not adsorbed, and
(C) After the step (b), a step of forming a second film on the side wall of the recess using the predetermined gas type, and a step of forming a second film.
(D) A step of etching the substrate through the recess and
Plasma processing method including.

The plasma treatment method according to claim 1, wherein the first film is an inhibitor layer formed on the bottom surface of the recess by chemical vapor deposition.

The step (c) is
(C1) A step of exposing the substrate to a precursor gas containing the predetermined gas type and adsorbing the precursor gas on the side wall of the recess.
(C2) A step of exposing the substrate to plasma generated from the reaction gas to form the second film from the precursor gas and the reaction gas.
The plasma processing method according to claim 1 or 2, wherein the plasma processing method comprises.

The plasma treatment method according to claim 3, wherein in the step (c) , the steps (c1) and (c2) are repeatedly executed a predetermined number of times.

(E) Further including a step of determining whether or not the distance between the bottom surface of the recess and the surface of the base layer is a predetermined distance or less.
The plasma treatment method according to any one of claims 1 to 4, wherein the steps (b) and (c) are executed when it is determined that the distance is equal to or less than the predetermined distance.

The plasma treatment method according to claim 5 , wherein the predetermined distance is 20 nanometers.

The steps (b) and (c) are executed when it is determined that the damaged layer is formed, and the steps (b) and (c) are executed.
The plasma treatment method according to any one of claims 1 to 6 , wherein the step (d) removes the damaged layer.

The plasma processing method according to any one of claims 1 to 7 , wherein each step is performed in the same chamber.

The plasma treatment method according to any one of claims 1 to 8 , wherein each step is performed on the substrate in which the base layer and the first layer are made of different materials.

The plasma treatment method according to any one of claims 1 to 9 , wherein in the step (c) , the second film is formed of a material different from that of the first layer.

Each step is executed on the substrate in which the base layer is SiO2 and the first layer is SiN or Si.
The plasma treatment method according to any one of claims 1 to 10 , wherein the step (c) forms the second film with a SiO2 film.

Each step is executed on the substrate in which the base layer is Si and the first layer is SiO2.
The plasma treatment method according to any one of claims 1 to 10 , wherein the step (c) forms the second film with SiN.

The plasma treatment method according to claim 3, wherein in the step (c), the thickness of the first film is reduced.

The first film contains fluorine and contains
The predetermined gas type contains silicon and
The plasma treatment method according to claim 3, wherein the reaction gas contains oxygen or nitrogen.

(A) The process of etching the substrate to form recesses,
(B) A step of forming a first film on the bottom surface of the recess by utilizing capillary condensation, in which a predetermined gas type is not adsorbed by an inhibitor.
(C) After the step (b), a step of forming a second film on the side wall of the recess using the predetermined gas type, and a step of forming a second film.
(D) A step of etching the substrate through the recess and
Plasma processing methods, including.

A storage unit that stores a predetermined program,
A control unit that controls the execution of the program,
It is a plasma processing device equipped with
By executing the program, the control unit
(A) A step of forming a recess in the first layer by etching a substrate including a base layer and a first layer formed on the base layer.
(B) When it is determined that the concave portion satisfies the predetermined conditions, a step of forming a first film on the bottom surface of the concave portion by the chemical vapor deposition so that the predetermined gas type is not adsorbed by the inhibitor.
(C) After the step (b), a step of forming a second film on the side wall of the recess using the predetermined gas type, and a step of forming a second film.
(D) A plasma processing apparatus that executes a step of etching the substrate through the recess .

A chamber having at least one gas inlet and at least one gas outlet.
A mounting table arranged in the chamber and
With the control unit
Equipped with
The control unit
(A) A step of arranging a substrate including a base layer and a first layer on the base layer on the above-mentioned table.
(B) A step of etching the first layer to form a recess in the first layer.
(C) A step of determining whether or not the recess satisfies a predetermined condition, and
(D) A step of forming a first film in which a predetermined gas type is not adsorbed on the bottom of the recess by an inhibitor when it is determined that the recess satisfies the predetermined condition.
(E) A second film different from the first film is formed on the side wall of the recess by the predetermined gas type without adsorbing the predetermined gas type to the first film on the bottom of the recess. The process of forming and
(F) A step of etching the first layer through the recess, and
A plasma processing device that is configured to perform processing including.