JP2020025039A - 外部共振器型半導体レーザ装置 - Google Patents
外部共振器型半導体レーザ装置 Download PDFInfo
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- JP2020025039A JP2020025039A JP2018149327A JP2018149327A JP2020025039A JP 2020025039 A JP2020025039 A JP 2020025039A JP 2018149327 A JP2018149327 A JP 2018149327A JP 2018149327 A JP2018149327 A JP 2018149327A JP 2020025039 A JP2020025039 A JP 2020025039A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000013307 optical fiber Substances 0.000 claims abstract description 40
- 238000006073 displacement reaction Methods 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000012790 confirmation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08013—Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
- H01S5/147—External cavity lasers using a fiber as external cavity having specially shaped fibre, e.g. lensed or tapered end portion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08081—Unstable resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
[第1実施形態]
[第2実施形態]
[第3実施形態]
Claims (4)
- 一又は複数のレーザダイオード光源とVBGとによって構成された外部共振器と、
前記レーザダイオード光源からの出力光を前記VBGに向けて出力すると共に、前記VBGからの戻り光が入力する光ファイバと、
前記VBGの配置位置を前記光ファイバにおける前記出力光及び前記戻り光の入出力端面に対して変位させる変位部と、を備える外部共振器型半導体レーザ装置。 - 前記変位部は、前記VBGを前記出力光の光軸に沿う方向に変位させる請求項1記載の外部共振器型半導体レーザ装置。
- 前記光ファイバの前記入出力端面と前記VBGとの間に集光レンズが配置されている請求項2記載の外部共振器型半導体レーザ装置。
- 前記光ファイバの前記入出力端面と前記VBGとの間にコリメートレンズが配置され、
前記変位部は、前記VBGを前記出力光の光軸と交差する方向に変位させる請求項1記載の外部共振器型半導体レーザ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018149327A JP7142512B2 (ja) | 2018-08-08 | 2018-08-08 | 外部共振器型半導体レーザ装置 |
US17/265,983 US20210313769A1 (en) | 2018-08-08 | 2019-05-31 | External resonator-type semiconductor laser device |
EP19848512.0A EP3836321A4 (en) | 2018-08-08 | 2019-05-31 | EXTERNAL RESONATOR SEMICONDUCTOR LASER DEVICE |
CN201980052159.9A CN112567578A (zh) | 2018-08-08 | 2019-05-31 | 外部共振器型半导体激光装置 |
PCT/JP2019/021831 WO2020031475A1 (ja) | 2018-08-08 | 2019-05-31 | 外部共振器型半導体レーザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018149327A JP7142512B2 (ja) | 2018-08-08 | 2018-08-08 | 外部共振器型半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020025039A true JP2020025039A (ja) | 2020-02-13 |
JP7142512B2 JP7142512B2 (ja) | 2022-09-27 |
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JP2018149327A Active JP7142512B2 (ja) | 2018-08-08 | 2018-08-08 | 外部共振器型半導体レーザ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210313769A1 (ja) |
EP (1) | EP3836321A4 (ja) |
JP (1) | JP7142512B2 (ja) |
CN (1) | CN112567578A (ja) |
WO (1) | WO2020031475A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7495868B2 (ja) | 2020-11-09 | 2024-06-05 | 株式会社フジクラ | Ldモジュールの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003318480A (ja) * | 2002-04-19 | 2003-11-07 | Furukawa Electric Co Ltd:The | 半導体レーザモジュールおよびこれを用いた光ファイバ増幅器 |
US20050265416A1 (en) * | 2004-05-26 | 2005-12-01 | Jds Uniphase Corporation | Wavelength stabilized laser |
JP2008060120A (ja) * | 2006-08-29 | 2008-03-13 | Victor Co Of Japan Ltd | 外部共振器型レーザ装置の組立方法 |
CN101859974A (zh) * | 2010-06-12 | 2010-10-13 | 徐州师范大学 | 窄线宽掺铥光纤激光器 |
JP2014063933A (ja) * | 2012-09-24 | 2014-04-10 | Shimadzu Corp | レーザ装置及びレーザ装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2531122A1 (en) | 2003-07-03 | 2005-02-10 | Pd-Ld, Inc. | Use of volume bragg gratings for the conditioning of laser emission characteristics |
US20150124848A1 (en) * | 2013-10-23 | 2015-05-07 | Ipg Photonics Corporation | Wavelength Stabilized Diode Laser Module with Limited Back Reflection |
US9287681B2 (en) * | 2013-11-13 | 2016-03-15 | Innovative Photoic Solutions, Inc. | Wavelength stabilized diode laser |
CN103762489B (zh) * | 2014-01-15 | 2016-03-30 | 江苏师范大学 | 波长连续可调谐激光装置 |
JP6268004B2 (ja) * | 2014-03-12 | 2018-01-24 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
US10126558B2 (en) * | 2016-01-11 | 2018-11-13 | Ut-Battelle, Llc | Stable, narrow spectral linewidth, fiber-delivered laser source for spin exchange optical pumping |
-
2018
- 2018-08-08 JP JP2018149327A patent/JP7142512B2/ja active Active
-
2019
- 2019-05-31 US US17/265,983 patent/US20210313769A1/en active Pending
- 2019-05-31 CN CN201980052159.9A patent/CN112567578A/zh active Pending
- 2019-05-31 EP EP19848512.0A patent/EP3836321A4/en active Pending
- 2019-05-31 WO PCT/JP2019/021831 patent/WO2020031475A1/ja unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003318480A (ja) * | 2002-04-19 | 2003-11-07 | Furukawa Electric Co Ltd:The | 半導体レーザモジュールおよびこれを用いた光ファイバ増幅器 |
US20050265416A1 (en) * | 2004-05-26 | 2005-12-01 | Jds Uniphase Corporation | Wavelength stabilized laser |
JP2008060120A (ja) * | 2006-08-29 | 2008-03-13 | Victor Co Of Japan Ltd | 外部共振器型レーザ装置の組立方法 |
CN101859974A (zh) * | 2010-06-12 | 2010-10-13 | 徐州师范大学 | 窄线宽掺铥光纤激光器 |
JP2014063933A (ja) * | 2012-09-24 | 2014-04-10 | Shimadzu Corp | レーザ装置及びレーザ装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7495868B2 (ja) | 2020-11-09 | 2024-06-05 | 株式会社フジクラ | Ldモジュールの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3836321A1 (en) | 2021-06-16 |
EP3836321A4 (en) | 2022-05-04 |
WO2020031475A1 (ja) | 2020-02-13 |
JP7142512B2 (ja) | 2022-09-27 |
CN112567578A (zh) | 2021-03-26 |
US20210313769A1 (en) | 2021-10-07 |
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