JP2020021823A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2020021823A JP2020021823A JP2018144564A JP2018144564A JP2020021823A JP 2020021823 A JP2020021823 A JP 2020021823A JP 2018144564 A JP2018144564 A JP 2018144564A JP 2018144564 A JP2018144564 A JP 2018144564A JP 2020021823 A JP2020021823 A JP 2020021823A
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- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- light
- emitting device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
まず、図1A、図1B、図1C、図1D、図2A、図2B、及び図2Cを参照して、本実施形態に係る発光装置100の構成について説明する。図1Aは、本実施形態に係る発光装置100の概略斜視図であり、図1Bは、図1Aの発光装置100の一部を透過させて見た場合の概略斜視図であり、図1Cは、本実施形態に係る発光装置100の概略上面図であり、図1Dは、本実施形態に係る発光装置100の概略底面図である。図2Aは、図1CのIIA−IIA線における本実施形態に係る発光装置100の構成を示す概略断面図であり、図2Bは、図1CのIIB−IIB線における本実施形態に係る発光装置100の構成を示す概略断面図であり、図2Cは、本実施形態に係る発光装置100の発光素子の構造及び光軸の状態を示す概略模式図である。
ここで、発光装置の上面とは、発光装置の発光面側をさし、上面視とは発光装置の発光面側から見ることである。
発光装置100は、1つ以上の発光素子を備え、ここでは、第1発光素子20A及び第2発光素子20Bの構成の一例として、第1発光素子20Aの構成について説明する。
第1素子光取り出し面201Aは、発光装置100の上面と対向し、第1素子光取り出し面201Aから出射した光が発光装置100の上面から放出される。
また、第1発光素子20Aは、第1素子基板24Aと、第1素子基板24Aに接して形成される第1素子半導体積層体23Aと、第1素子半導体積層体23Aに接して形成される一対の素子電極(第1外側電極21A及び第1内側電極22A)と、を備えている。ここで、第1外側電極21Aは、一対の素子電極のうち発光装置100の外側に位置し、第1内側電極22Aは、発光装置100の中心側に位置する。なお、本実施形態では、第1発光素子20Aが第1素子基板24Aを備える構成を一例に挙げて説明するが、第1素子基板24Aは除去されていてもよい。
また、第1素子基板24A、第2素子基板24Bは、透光性を有することが好ましい。これにより、フリップチップ実装を採用し易く、光の取り出し効率を高め易い発光装置100を実現できる。
第1素子基板24A、第2素子基板24Bの母材としては、例えば、サファイア、窒化ガリウム、炭化珪素、ダイヤモンドなどを用いることができ、特に、サファイア、窒化ガリウムを用いることが好ましい。
第1発光素子20A、第2発光素子20Bは、電圧が印加されることで、自ら発光する半導体素子であり、窒化物半導体などから構成される既知の半導体素子を適用できる。第1発光素子20A、第2発光素子20Bとしては、例えば、LEDチップなどが挙げられる。
この半導体素子に適用される半導体材料としては、波長変換物質(波長変換粒子)を効率良く励起でき、短波長の光を発光可能な材料である、窒化物半導体を用いることが好ましい。窒化物半導体は、主として一般式InxAlyGa1−x−yN(0≦x、0≦y、x+y≦1)で表される。このほか、InAlGaAs系半導体、InAlGaP系半導体、硫化亜鉛、セレン化亜鉛、炭化珪素などを用いることもできる。
第2発光素子20Bの発光ピーク波長は、第1発光素子20Aの発光ピーク波長と異なり、490nm以上570nm未満の範囲(緑色領域の波長範囲)であることが好ましい。
第1発光素子20Aの発光ピーク波長、第2発光素子20Bの発光ピーク波長をそれぞれ上述のように規定することで、発光装置100の色再現性を向上させることができる。
また、第2発光素子20Bの半値幅は、5nm以上40nm以下であることが好ましい。第2発光素子20Bの半値幅を5nm以上とすることで、第2発光素子20Bの光出力を向上させることができ、第2発光素子20Bの半値幅を40nm以上とすることで、緑色光のピークを鋭くすることができる。
また、第2外側電極21Bに接合する導電性接着部材70の高さが第2内側電極22Bに接合する導電性接着部材70の高さよりも高い。そのため、第2発光素子20Bの活性層232Bが、発光素子の載置面に対して発光装置100の中心側に傾斜している。
なお、発光装置100の中心側とは、発光装置100の内部の中央方向側をいい、本実施形態では、発光装置100の長手方向(図1に示すX方向)の中央と、短手方向(図1に示すY方向)の中央と、奥行き方向(図1に示すZ方向)の中央と、の交点側をいう。
角度θの調整は、導電性接着部材70の高さを調整することにより行うことができる。
透光性部材30は、第1素子光取り出し面201A、第2素子光取り出し面201Bと対向する波長変換層31Aと、波長変換層31A上に配置される第1透光層31Bと、を備えている。波長変換層31Aと第1透光層31Bとは積層されている。
波長変換層31Aは、ここでは、導光部材60を介して、第1発光素子20A及び第2発光素子20Bから離間して、第1素子光取り出し面201A、第2素子光取り出し面201Bを連続して覆っている。
透光性部材30の母材は、例えば、シリコーン樹脂、エポキシ樹脂、フェノール樹脂、ポリカーボネート樹脂、アクリル樹脂、又はこれらの変性樹脂、ガラスなどを用いることができる。特に、シリコーン樹脂及び変性シリコーン樹脂は、耐熱性及び耐光性に優れるため、透光性部材30の母材として用いることが好ましい。具体的なシリコーン樹脂としては、ジメチルシリコーン樹脂、フェニル−メチルシリコーン樹脂、ジフェニルシリコーン樹脂が挙げられる。なお、本明細書において、「変性樹脂」とは、ハイブリッド樹脂を含むものとする。
例えば、第1波長変換層301A及び第2波長変換層301Bのいずれか一方の層をβサイアロン系蛍光体を含有する層とし、他方の層を他の波長変換物質、例えばマンガン賦活フッ化珪酸カリウムの蛍光体を含有する層とすることができる。
具体的には、例えば、第1波長変換層301Aに含有される波長変換物質としてβサイアロン系蛍光体が挙げられ、第2波長変換層301Bに含有される波長変換物質としてマンガン賦活フッ化珪酸カリウムの蛍光体が挙げられる。
なお、ここでは、波長変換層31Aは2つの層としたが、異なる波長変換物質を含有する3つ以上の層としてもよい。また、複数の波長変換層の間に、波長変換物質を含有しない透光層を備えてもよい。
更に、ここでは波長変換層1層につき、1つの波長変換物質を含有するものとしたがこれに限らない。2以上の波長変換物質を混合してもよい。
また、第1透光層31Bは、波長変換層31Aの保護層として機能する。これにより、波長変換層31Aが水分に弱い波長変換物質(例えば、マンガン賦活フッ化物系蛍光体)を含んでいても、波長変換層31Aの劣化を抑制することができる。
第1反射部材40は、第1発光素子20A及び第2発光素子20BにおいてX方向及び/又はY方向に進む光を、反射させて、Z方向に進む光を増加させる。
即ち、第1反射部材40を設けることで、第1発光素子20Aが発光する光、第2発光素子20Bが発光する光を、より多く透光性部材30へと反射させることが可能になる。これにより、発光装置100の光取り出し効率を向上させることができる。
第1反射部材40は、波長変換層31Aの側面、第1透光層31Bの側面を被覆することが好ましい。これにより、発光領域と非発光領域とのコントラストが高く、見切り性の良好な発光装置100を実現できる。
また、第1反射部材40は、下面が基板10内に入り込み、下面が基板10内に存在する。これにより、発光装置100の側面から光が漏れることを防止することができる。
第1反射部材40の傾斜角度は、適宜選択できるが、0.3°以上3°以下であることが好ましく、0.5°以上2°以下であることがより好ましく、0.7°以上1.5°以下であることが更に好ましい。なお、発光装置100では、側面を傾斜させた場合には、光を照射する向きを調整して接続する基板側に接続されることになる。
導光部材60の母材としては、第1反射部材40と同じ樹脂を用いることができる。
導光部材60に用いられる波長変換物質の発光ピーク波長は、580nm以上680nm未満であることが好ましく、515nm以上550nm未満であることがより好ましい。これにより、例えば、液晶ディスプレイとした時に広色域を拡大できるという効果を奏することができる。
導電性接着部材70の材料としては、例えば、金、銀、銅などのバンプ、銀、金、銅、プラチナ、アルミニウム、パラジウムなどの金属粉末と樹脂バインダを含む金属ペースト、錫−ビスマス系、錫−銅系、錫−銀系、金−錫系などの半田、低融点金属などのろう材のうちの何れか1つを用いることが好ましい。
基材11の厚さの下限値は、強度の観点から、0.05mm以上であることが好ましく、0.2mm以上であることがより好ましい。また、基材11の厚さの上限値は、Z方向における発光装置100の厚さ(奥行き)の観点から、0.5mm以下であることが好ましく、0.4mm以下であることがより好ましい。
また、第1配線12は、上面視において、第1発光素子20Aの第1外側電極21Aと重なる位置に、第1発光素子20Aと接続する第1外側凸部121Aを有し、第1内側電極22Aと重なる位置に、第1発光素子20Aと接続する第1内側凸部122Aを有することが好ましい。また、第1配線12は、上面視において、第2発光素子20Bの第2外側電極21Bと重なる位置に、第2発光素子20Bと接続する第2外側凸部121Bを有し、第2内側電極22Bと重なる位置に、第2発光素子20Bと接続する第2内側凸部122Bを有することが好ましい。
これにより、導電性接着部材70を介して、第1配線12と第1外側電極21A及び第1内側電極22Aとを接続する際、第1配線12と第2外側電極21B及び第2内側電極22Bとを接続する際、セルフアライメント効果により、各発光素子と基板10との位置合わせを容易に行うことができる。
第1外側凸部121A、第1内側凸部122A、第2外側凸部121B、第2内側凸部122Bは、側面が、傾斜していてもよく、垂直でもよい。側面が垂直であることで、第1外側凸部121A、第1内側凸部122A、第2外側凸部121B、第2内側凸部122B上に載置される第1発光素子20A、第2発光素子20Bを固定させ易くなり、各発光素子の実装を安定させることができる。
第2配線13は、第2配線13の一部を被覆する絶縁膜18を備えてもよい。絶縁膜18は、当該分野で使用されるもの、例えば、熱硬化性樹脂又は熱可塑性樹脂などを用いて形成されることが好ましい。第2配線13が絶縁膜18を備えることで、底面112における絶縁性の確保及び短絡の防止をより確実に図ることができる。また、第2配線13が絶縁膜18を備えることで、基材11から第2配線13が剥がれることを防止することができる。
なお、基板10にビア15を設けない構成とすることも可能である。
充填部材152は、上述した各配線で使用する導電性材料であってもよく、例えば、エポキシ樹脂などの絶縁性材料であってもよい。
窪み16は、底面112において、開口形状が、略半円形状であることが好ましい(図1D参照)。底面112において、窪み16の開口形状が角部のない形状であることにより、窪み16に係る応力が集中することを抑制できるので、基材11が割れることを抑制することができる。
窪み16は、実装側の側面113側と実装側と反対側の側面114側とで同じ深さであってもよく、実装側の側面113側と実装側と反対側の側面114側とで異なる深さであってもよい。
次に、図3〜図10を参照して、本実施形態に係る発光装置100における変形例について説明する。なお、各変形例において、上述の実施形態、他の変形例と共通する部分については、重複した説明を省略する。
図3は、本実施形態に係る発光装置100の第1変形例の構成を示す断面図である。第1変形例に係る発光装置100Aについて、図3を参照して説明する。
また、第1反射部材40の下面が第2反射部材80中に存在する点で発光装置100と異なる。
第2反射部材80は、第1発光素子20A及び/又は第2発光素子20Bから発光装置100Aの外側面に向かい厚くなる傾斜部を備えることが好ましい。第2反射部材80が傾斜部を備えることで、第1発光素子20A及び/又は第2発光素子20Bからの光の取り出し効率を向上させることができる。
第2反射部材80は、Z方向への光取り出し効率の観点から、各発光素子の発光ピーク波長における光反射率が、70%以上であることが好ましく、80%以上であることがより好ましく、90%以上であることが更に好ましい。
図4は、本実施形態に係る発光装置100の第2変形例の構成を示す断面図である。第2変形例に係る発光装置100Bについて、図4を参照して説明する。
また、第2変形例に係る発光装置100Bは、発光素子の光取り出し面が被覆部材31Dで被覆されている点、及び、第2反射部材80及び第3反射部材50を備えている点で発光装置100と異なる。
なお、波長変換層31A、第2透光層31Cの母材は、同じ樹脂材料で形成してもよいし、異なる樹脂材料で形成してもよい。
また、第2透光層31Cの厚みは、10μm以上50μm以下が好ましい。
第2拡散粒子としては、例えば、酸化チタン、酸化ケイ素、酸化アルミニウム、酸化ジルコニウム、酸化亜鉛などを用いることができる。
第1拡散粒子と第2拡散粒子とは、同じ材料であってもよく、異なる材料であってもよい。第2拡散粒子は、第1拡散粒子よりも屈折率の低い材料であることが好ましい。例えば、第1拡散粒子として、酸化チタンを選択し、第2拡散粒子として、酸化ケイ素を選択することができる。これにより、第2拡散粒子によって拡散される光が減少するので、発光装置100の光取り出し効率を向上させることができる。
被覆部材31Dは、単数で構成され、第1発光素子20Aの第1素子光取り出し面201A、第2発光素子20Bの第2素子光取り出し面201Bを連続的に被覆してもよい。また、被覆部材31Dは、複数で構成され、第1発光素子20Aの第1素子光取り出し面201A、第2発光素子20Bの第2素子光取り出し面201Bの一部を断続的に被覆してもよい。各発光素子における光取り出し面の一部を露出させることで、各発光素子の光取り出し効率を向上させることができる。
発光装置100Bは、第3反射部材50を備えることで、各発光素子の側面から出る光を透光性部材30の方向に反射させ、光取り出し効率を向上させることができる。
図5は、本実施形態に係る発光装置100の第3変形例の構成を示す断面図である。第3変形例に係る発光装置100Cについて、図5を参照して説明する。
また、第2反射部材80を備えている点で発光装置100と異なる。
更に、第3変形例に係る発光装置100Cは、電極の高さを調整することにより第1発光素子20A及び第2発光素子20Bを傾斜させている点で発光装置100と異なる。
また、図5に示す発光装置100Cのように、第1発光素子20A、第2発光素子20Bを載置する基板10を備えていない場合、第1素子電極形成面203A、第2素子電極形成面203Bが、第2反射部材80で被覆されることで、第1発光素子20Aが発光する光、第2発光素子20Bが発光する光が、発光装置100Cを実装する実装基板に吸収されることを抑制することができる。これにより、発光装置100Cの光取り出し効率を向上させることができる。
ここでは、第2反射部材80は、第1発光素子20A及び第2発光素子20Bの下面に連続して備えられている。
第1発光素子20Aは、第1外側電極21Aの高さを、第1内側電極22Aの高さよりも高くすることで、第1発光素子20Aの活性層を、発光素子の載置面に対して(発光装置100の発光面に対して)発光装置100Cの中心側に傾斜させている。
また、第2発光素子20Bは、第2外側電極21Bの高さを、第2内側電極22Bの高さよりも高くすることで、第2発光素子20Bの活性層を、発光素子の載置面に対して(発光装置100の発光面に対して)発光装置100Cの中心側に傾斜させている。
これにより、第1発光素子20Aの活性層と第2発光素子20Bの活性層とがなす波長変換層31A側の角度θが180°より小さくなっている。
なお、基板10を備えていない場合であっても、他の方法により活性層を傾斜させてもよい。
図6は、本実施形態に係る発光装置100の第4変形例の構成を示す断面図である。第4変形例に係る発光装置100Dについて、図6を参照して説明する。
第1発光素子20Aは、第1外側電極21Aに接続する第1外側凸部121Aの高さを、第1内側電極22Aに接合する第1内側凸部122Aの高さよりも高くすることで、第1発光素子20Aの活性層を、発光素子の載置面に対して発光装置100Dの中心側に傾斜させている。
また、第2発光素子20Bは、第2外側電極21Bに接続する第2外側凸部121Bの高さを、第2内側電極22Bに接続する第2内側凸部122Bの高さよりも高くすることで、第2発光素子20Bの活性層を、発光素子の載置面に対して発光装置100Dの中心側に傾斜させている。
これにより、第1発光素子20Aの活性層と第2発光素子20Bの活性層とがなす波長変換層31A側の角度θが180°より小さくなっている。
図7は、本実施形態に係る発光装置100の第5変形例の構成を示す断面図である。第5変形例に係る発光装置100Eについて、図7を参照して説明する。
また、第2発光素子20Bは、第2内側電極22Bに接続する第2内側凸部122Bを無くすとともに、第2外側電極21Bに接合する導電性接着部材70の高さを、第2内側電極22Bに接合する導電性接着部材70の高さよりも高くしている。これにより、第2発光素子20Bの活性層を、発光素子の載置面に対して発光装置100Eの中心側に傾斜させている。
これにより、第1発光素子20Aの活性層と第2発光素子20Bの活性層とがなす波長変換層31A側の角度θが180°より小さくなっている。
図8は、本実施形態に係る発光装置100の第6変形例の構成を示す断面図である。第6変形例に係る発光装置100Fについて、図8を参照して説明する。
これにより、第1発光素子20Aの活性層と第2発光素子20Bの活性層とがなす波長変換層31A側の角度θが180°より小さくなっている。
スペーサ90としては、例えば、銅、鉄、アルミニウム、チタン、又はこれらのうちの少なくとも1種を含む合金などからなるボールを用いることができる。
また、スペーサ90の大きさを調整することで、活性層の傾斜角度を調整することができる。例えば、第1外側電極21Aの下面と基板10の上面との間のスペーサ90、及び、第2外側電極の下面と基板10の上面との間のスペーサ90をより大きくすることで、第1発光素子20Aの活性層232Aと第2発光素子20Bの活性層232Bとがなす波長変換層31A側の角度θをより小さくすることができる。
図9は、本実施形態に係る発光装置100の第7変形例の構成を示す断面図である。第6変形例に係る発光装置100Gについて、図9を参照して説明する。
第1発光素子20Aは、第1外側電極21Aの下面と基板10の上面との間のスペーサ90の大きさを、第1内側電極22Aの下面と基板10の上面との間のスペーサ90の大きさよりも大きくすることで、第1発光素子20Aの活性層を、発光素子の載置面に対して発光装置100Gの中心側に傾斜させている。
また、第2発光素子20Bは、第2外側電極21Bの下面と基板10の上面との間のスペーサ90の大きさを、第2内側電極22Bの下面と基板10の上面との間のスペーサ90の大きさよりも大きくすることで、第2発光素子20Bの活性層を、発光素子の載置面に対して発光装置100Gの中心側に傾斜させている。
これにより、第1発光素子20Aの活性層と第2発光素子20Bの活性層とがなす波長変換層31A側の角度θが180°より小さくなっている。
図10は、本実施形態に係る発光装置100の第8変形例の構成を示す断面図である。第8変形例に係る発光装置100Hについて、図10を参照して説明する。
第3発光素子20Cは、第3素子光取り出し面201Cと、第3素子光取り出し面の反対側にある第3素子電極形成面203Cと、第3素子光取り出し面201Cと第3素子電極形成面203Cとの間にある第3素子側面202Cと、を有している。第3発光素子20Cは、第1発光素子20Aと略同じ構成であるため、ここでは説明を省略する。
そして、第1外側電極21Aに接合する導電性接着部材70の高さが第1内側電極22Aに接合する導電性接着部材70の高さよりも高い。そのため、第1発光素子20Aの活性層が、発光素子の載置面に対して発光装置100Hの中心側に傾斜している。
また、第3外側電極21Cに接合する導電性接着部材70の高さが第3内側電極22Cに接合する導電性接着部材70の高さよりも高い。そのため、第3発光素子20Cの活性層が、発光素子の載置面に対して発光装置100Hの中心側に傾斜している。
角度θについては、本実施形態に係る発光装置100で説明したとおりである。
ただし、各発光素子の発光ピーク波長にかかわらず、波長変換物質の発光ピーク波長は、580nm以上680nm未満の範囲(赤色領域の波長範囲)としてもよい。
発光装置100などでは、第1発光素子20A及び第2発光素子20Bのいずれの活性層も発光素子の載置面に対して傾斜しているものとしたが、第1発光素子20A及び第2発光素子20Bの少なくとも一方の発光素子の活性層が、発光素子の載置面に対して傾斜していればよい。第1発光素子20A及び第2発光素子20Bのいずれか一方の発光素子の活性層を発光素子の載置面に対して傾斜させる場合、例えば、前記した発光素子の活性層を傾斜させる各方法において、第1発光素子20A及び第2発光素子20Bのいずれか一方の発光素子側に各方法を適用すればよい。
また、発光装置100Hでは、上面視において、第1発光素子20Aと第3発光素子20Cの間に第2発光素子20Bが位置しているものとしたが、第1発光素子20Aと第2発光素子20Bの間に第3発光素子20Cが位置しているものとし、第1発光素子20Aの活性層及び第2発光素子20Bの活性層を、発光素子の載置面に対して発光装置100Hの中心側に傾斜させてもよい。
また、第1発光素子20A、第2発光素子20B及び第3発光素子20Cのうちの2以上の発光素子の光軸が発光装置の発光面側で交差することが好ましい。
また、発光素子の活性層を傾斜させる方法として、導電性接着部材70の高さを調整したり、第1配線12の凸部の高さを調整したり、スペーサ90を用いたり、発光素子の電極の高さを調整したりすることを挙げたが、発光装置の構造などにより、これらの方法から適宜選択すればよい。また、前記した複数の方法を組み合わせてもよく、また、他の方法により傾斜させてもよい。
また、前記した実施形態及び変形例では、発光素子は、X方向とZ方向とがなす面において、Z方向の高さが異なるように傾斜しているものとした。しかしながら、発光素子は、Y方向とZ方向とがなす面において、Z方向の高さが異なるように傾斜しているものであってもよい。
また、発光素子の個数は、少なくとも2つ以上であれば、特に限定されるものではない。
以上説明した変形例に係る発光装置においても、色ムラを低減させた発光装置を実現できる。
次に、図11及び図12を参照して、本実施形態に係る発光装置100の製造方法について説明する。なお、本実施形態に係る発光装置の製造方法において、一部の工程は、順序が限定されるものではなく、順序が前後してもよい。
本工程において、発光素子の実装方法は、リフロー法を用いた半田によるフリップチップ実装であることが好ましい。
また、第1配線12上に設けた導電性接着部材70は、例えば、板状の部材などで熱を加えて押すことで、上面を平坦にすることが好ましい。このようにすることで、実装する発光素子のぐらつきが防止され、発光素子が安定し易くなる。
本工程において、導光部材60は、例えば、母材と波長変換物質とを含む液状樹脂材料を、第1発光素子20A、第2発光素子20Bが実装された実装面の上に滴下することによって形成される。また、圧縮成形、トランスファ成形によっても行うことができる。或いは、導光部材60は、例えば、波長変換物質を、噴霧(スプレー)法、電着法などによって、第1発光素子20A、第2発光素子20Bが実装された実装面の上に付着させた後、母材を滴下して波長変換物質に含浸させ、固化させることで形成される。なお、波長変換物質は、導光部材60の一部分に形成されてもよいし、導光部材60の全体に形成されてもよい。また、波長変換物質は含有させなくてもよい。
本工程において、導光部材60は、研削等の公知の方法を用いることができる。
本工程において、まず、導光部材60上に第1波長変換層301Aが形成され、次に、第1波長変換層301A上に第2波長変換層301Bが形成されて波長変換層31Aが形成される。次に、第2波長変換層301B上(波長変換層31A上)に第1透光層31Bが形成される。
本工程において、凹部R1は、破線S1に沿って、透光性部材30及び導光部材60が、ブレードやレーザによって切断されることで形成される。また、凹部R2は、破線S2に沿って、透光性部材30及び導光部材60が、ブレードやレーザによって切断されることで形成される。
凹部R1、凹部R2を形成することで、上面視において、第1発光素子20A、第2発光素子20B、及び、導光部材60を囲む第1反射部材40を、次工程において、精度良く製造することができる。なお、凹部R1、凹部R2は、凹部形状に限定されるものではなく、例えば、V字形状、U字形状などであってもよい。
本工程において、第1反射部材40は、例えば、まず、ディスペンサを用いたポッティングなどによって、光反射性物質を分散させた未硬化の樹脂を、透光性部材30の上に滴下、或いは、凹部R1、凹部R2に充填する。若しくは、印刷などによって凹部内及び透光性部材30上に第1反射部材40を形成する。その後、透光性部材30の上に滴下、或いは、凹部R1、凹部R2に充填された未硬化の樹脂を、ヒーターなどの加熱装置によって、所定温度で所定時間加熱し、硬化させることにより形成される。
本工程において、第1反射部材40は、例えば、砥石や切削刃により研削される。或いは、第1反射部材40は、例えば、グラインダ及びポリッシャを用いて研磨される。これにより、導光部材60を介して、第1発光素子20Aの第1素子側面202A、第2発光素子20Bの第2素子側面202B被覆し、凹部R1、凹部R2に沿った形状を有する第1反射部材40を形成することができる。
本工程において、発光装置100は、ブレードダイシング法やレーザダイシング法などによって、隣接する発光装置100の中間を通る破線S3に沿って、第1反射部材40及び基板10が切断され、また、隣接する発光装置100の中間を通る破線S4に沿って、第1反射部材40及び基板10が切断されることで個片化される。本工程において、発光装置100は、例えば、刃の厚さが20μmのダイシングソーなどで、破線S3及び破線S4に沿って、すなわち、各分離溝の中央部で分離溝に沿って切断される。
第2反射部材80は、例えば、トランスファ成形、射出成形、圧縮成形、ポッティングなどにより形成することができる。
第2反射部材80は、一部が発光素子の側面に這い上がる場合がある。その場合、ブラストなどで側面の第2反射部材80を取り除いたり、第2反射部材80を2回に分けて配置したりすることで、発光素子の側面への這い上がりを抑制することができる。
また、第3反射部材50を設ける場合は、発光素子実装工程(S601)の後、かつ導光部材形成工程(S603)の前に第3反射部材形成工程を行えばよい。
第3反射部材50は、例えば、トランスファ成形、射出成形、圧縮成形、ポッティングなどにより形成することができる。
また、図4に示す発光装置100Bのように、被覆部材31Dを設ける場合は、発光素子実装工程(S601)の前、又は、発光素子実装工程(S601)の後、かつ導光部材形成工程(S602)の前に被覆部材形成工程を行えばよい。
被覆部材31は、例えば、トランスファ成形、射出成形、圧縮成形、ポッティングなどにより形成することができる。
第3発光素子20Cを実装する場合は、発光素子実装工程(S601)において、第3発光素子20Cの活性層を、発光素子の載置面に対して傾斜させてもよい。
また、上面視において、第1発光素子20Aと第3発光素子20Cの間に第2発光素子20Bを配置し、第1発光素子20A及び第3発光素子20Cの活性層を、発光素子の載置面に対して発光装置100の中心側(第2発光素子20B側)に傾斜させてもよい。
また、透光性部材形成工程(S604)において、導光部材60を介して、第1発光素子20Aの第1素子光取り出し面201A、第2発光素子20Bの第2素子光取り出し面201B、第3発光素子20Cの第3素子光取り出し面201Cを連続して覆う透光性部材30を形成する。
20A 第1発光素子
20B 第2発光素子
20C 第3発光素子
21A 第1外側電極
21B 第2外側電極
21C 第3外側電極
22A 第1内側電極
22B 第2内側電極
22C 第3内側電極
23A 第1素子半導体積層体
23B 第2素子半導体積層体
23C 第3素子半導体積層体
24A 第1素子基板
24B 第2素子基板
24C 第3素子基板
30 透光性部材
31A 波長変換層
31B 第1透光層
31C 第2透光層
40 第1反射部材
50 第3反射部材
60 導光部材
70 導電性接着部材
80 第2反射部材
90 スペーサ
100,100A,100B,100C,100D 発光装置
100E,100F,100G,100H 発光装置
121A 第1外側凸部
121B 第2外側凸部
121C 第3外側凸部
122A 第1内側凸部
122B 第2内側凸部
122C 第3内側凸部
201A 第1素子光取り出し面
201B 第2素子光取り出し面
201C 第3素子光取り出し面
202A 第1素子側面
202B 第2素子側面
202C 第3素子側面
203A 第1素子電極形成面
203B 第2素子電極形成面
203C 第3素子電極形成面
231A,231B p型半導体層
232A,232B 活性層
233A,233B n型半導体層
301A 第1波長変換層
301B 第2波長変換層
Claims (15)
- 光取り出し面と、前記光取り出し面の反対側にある電極形成面と、前記光取り出し面と前記電極形成面との間にある側面とを有する第1発光素子と、
光取り出し面と、前記光取り出し面の反対側にある電極形成面と、前記光取り出し面と前記電極形成面との間にある側面とを有し、前記第1発光素子の発光ピーク波長と異なる発光ピーク波長を有する第2発光素子と、
前記第1発光素子の光取り出し面、前記第1発光素子の側面、前記第2発光素子の光取り出し面及び前記第2発光素子の側面を被覆する導光部材と、
前記導光部材を介して、前記第1発光素子及び前記第2発光素子から離間して、前記第1発光素子の光取り出し面及び前記第2発光素子の光取り出し面を連続して覆う波長変換層と、
前記導光部材の外側面を被覆する第1反射部材と、を備え、
前記第1発光素子の活性層と前記第2発光素子の活性層とがなす前記波長変換層側の角度が180°より小さい発光装置。 - 前記第1発光素子の活性層と前記第2発光素子の活性層とがなす前記波長変換層側の角度が170°以上179.8°以下である、請求項1に記載の発光装置。
- 前記第1発光素子及び前記第2発光素子の下面に連続して第2反射部材を備える、請求項1又は請求項2に記載の発光装置。
- 前記第1発光素子及び前記第2発光素子を載置する基板を備える、請求項1又は請求項2に記載の発光装置。
- 前記第1発光素子及び前記第2発光素子の下面と前記基板の上面との間に連続して第2反射部材を備える、請求項4に記載の発光装置。
- 前記第1発光素子の電極形成面は、第1外側電極及び第1内側電極を有し、
前記第2発光素子の電極形成面は、第2外側電極及び第2内側電極を有し、
前記第1外側電極、前記第1内側電極、前記第2外側電極及び前記第2内側電極と前記基板とを接合する導電性接着部材を備え、
前記第1外側電極に接合する前記導電性接着部材の高さが前記第1内側電極に接合する前記導電性接着部材の高さよりも高い、及び、前記第2外側電極に接合する前記導電性接着部材の高さが前記第2内側電極に接合する前記導電性接着部材の高さよりも高い、のうちの少なくとも一方である、請求項4又は請求項5に記載の発光装置。 - 前記基板は、前記第1発光素子と接続する第1外側凸部及び第1内側凸部と、前記第2発光素子と接続する第2外側凸部及び第2内側凸部とを有し、
前記第1外側凸部の高さが前記第1内側凸部の高さよりも高い、及び、前記第2外側凸部の高さが前記第2内側凸部の高さよりも高い、のうちの少なくとも一方である、請求項4又は請求項5に記載の発光装置。 - 前記基板は、前記第1発光素子と接続する第1外側凸部、及び、前記第2発光素子と接続する第2外側凸部のうちの少なくとも一方を有する、請求項4又は請求項5に記載の発光装置。
- 前記第1発光素子の電極形成面は、第1外側電極及び第1内側電極を有し、
前記第2発光素子の電極形成面は、第2外側電極及び第2内側電極を有し、
前記第1外側電極及び前記第2外側電極のうちの少なくとも一方の電極の下面と前記基板の上面との間にスペーサを備える、請求項4又は請求項5に記載の発光装置。 - 前記第1発光素子の電極形成面は、第1外側電極及び第1内側電極を有し、
前記第2発光素子の電極形成面は、第2外側電極及び第2内側電極を有し、
前記第1外側電極、前記第1内側電極、前記第2外側電極、及び前記第2内側電極の下面と前記基板の上面との間にスペーサを備え、
前記第1外側電極の下面と前記基板の上面との間の前記スペーサの大きさが前記第1内側電極の下面と前記基板の上面との間の前記スペーサの大きさよりも大きい、又は、前記第2外側電極の下面と前記基板の上面との間の前記スペーサの大きさが前記第2内側電極の下面と前記基板の上面との間の前記スペーサの大きさよりも大きい、のうちの少なくとも一方である、請求項4又は請求項5に記載の発光装置。 - 前記第1発光素子の電極形成面は、第1外側電極及び第1内側電極を有し、
前記第2発光素子の電極形成面は、第2外側電極及び第2内側電極を有し、
前記第1外側電極の高さが前記第1内側電極の高さよりも高い、及び、前記第2外側電極の高さが前記第2内側電極の高さよりも高い、のうちの少なくとも一方である、請求項1から請求項5のいずれか1項に記載の発光装置。 - 前記第1発光素子の光軸は、前記第2発光素子の光軸と発光装置の発光面側で交差する、請求項1から請求項11のいずれか1項に記載の発光装置。
- 前記第1発光素子の発光ピーク波長が430nm以上490nm未満の範囲であり、前記第2発光素子の発光ピーク波長が490nm以上570nm未満の範囲である、請求項1から請求項12のいずれか1項に記載の発光装置。
- 前記波長変換層は波長変換物質を含み、
前記波長変換物質の発光ピーク波長が580nm以上680nm未満の範囲である、請求項1から請求項13のいずれか1項に記載の発光装置。 - 前記第1反射部材は、前記波長変換層の外側面を更に被覆する、請求項1から請求項14のいずれか1項に記載の発光装置。
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WO2023157210A1 (ja) * | 2022-02-18 | 2023-08-24 | 三菱電機株式会社 | 素子実装体 |
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173397A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
JP2007220925A (ja) * | 2006-02-17 | 2007-08-30 | Hitachi Displays Ltd | モジュール基板と液晶表示装置、及び照明装置 |
JP2010098313A (ja) * | 2008-10-15 | 2010-04-30 | Samsung Led Co Ltd | Ledパッケージモジュール |
JP2010515243A (ja) * | 2007-01-12 | 2010-05-06 | パナソニック株式会社 | 発光装置及びこれを用いた照明装置 |
JP2010283244A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
WO2011004796A1 (ja) * | 2009-07-07 | 2011-01-13 | シーシーエス株式会社 | 発光装置 |
WO2011048881A1 (ja) * | 2009-10-20 | 2011-04-28 | シャープ株式会社 | 照明装置、表示装置、テレビ受信装置 |
JP2011129932A (ja) * | 2009-12-21 | 2011-06-30 | Lg Innotek Co Ltd | 発光素子及びそれを用いたライトユニット |
WO2011099328A1 (ja) * | 2010-02-10 | 2011-08-18 | シャープ株式会社 | バックライト装置および液晶表示装置並びにテレビジョン受像機 |
JP2015228512A (ja) * | 2010-02-09 | 2015-12-17 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
JP2016001704A (ja) * | 2014-06-12 | 2016-01-07 | 三菱電機株式会社 | 映像表示装置、大型表示装置及び映像表示装置の製造方法 |
US20180040779A1 (en) * | 2014-12-30 | 2018-02-08 | Semicon Light Co., Ltd. | Semiconductor light emitting device and method for manufacturing same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2790237B2 (ja) | 1993-06-28 | 1998-08-27 | 日亜化学工業株式会社 | 多色発光素子 |
JP3329573B2 (ja) | 1994-04-18 | 2002-09-30 | 日亜化学工業株式会社 | Ledディスプレイ |
KR101200400B1 (ko) | 2005-12-01 | 2012-11-16 | 삼성전자주식회사 | 백색 발광 다이오드 |
JP2007184493A (ja) | 2006-01-10 | 2007-07-19 | Sony Corp | 光源装置、表示装置 |
JP2009099715A (ja) | 2007-10-16 | 2009-05-07 | Fujikura Ltd | 発光装置 |
JP5052397B2 (ja) | 2008-04-23 | 2012-10-17 | 三菱電機株式会社 | 発光装置並びに発光器具 |
KR101064036B1 (ko) * | 2010-06-01 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 시스템 |
-
2018
- 2018-07-31 JP JP2018144564A patent/JP2020021823A/ja active Pending
-
2019
- 2019-07-30 US US16/526,263 patent/US11038084B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173397A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
JP2007220925A (ja) * | 2006-02-17 | 2007-08-30 | Hitachi Displays Ltd | モジュール基板と液晶表示装置、及び照明装置 |
JP2010515243A (ja) * | 2007-01-12 | 2010-05-06 | パナソニック株式会社 | 発光装置及びこれを用いた照明装置 |
JP2010098313A (ja) * | 2008-10-15 | 2010-04-30 | Samsung Led Co Ltd | Ledパッケージモジュール |
JP2010283244A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
WO2011004796A1 (ja) * | 2009-07-07 | 2011-01-13 | シーシーエス株式会社 | 発光装置 |
WO2011048881A1 (ja) * | 2009-10-20 | 2011-04-28 | シャープ株式会社 | 照明装置、表示装置、テレビ受信装置 |
JP2011129932A (ja) * | 2009-12-21 | 2011-06-30 | Lg Innotek Co Ltd | 発光素子及びそれを用いたライトユニット |
JP2015228512A (ja) * | 2010-02-09 | 2015-12-17 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
WO2011099328A1 (ja) * | 2010-02-10 | 2011-08-18 | シャープ株式会社 | バックライト装置および液晶表示装置並びにテレビジョン受像機 |
JP2016001704A (ja) * | 2014-06-12 | 2016-01-07 | 三菱電機株式会社 | 映像表示装置、大型表示装置及び映像表示装置の製造方法 |
US20180040779A1 (en) * | 2014-12-30 | 2018-02-08 | Semicon Light Co., Ltd. | Semiconductor light emitting device and method for manufacturing same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023157210A1 (ja) * | 2022-02-18 | 2023-08-24 | 三菱電機株式会社 | 素子実装体 |
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