JP2020002424A - Substrate support mechanism - Google Patents

Abstract

To provide a substrate support mechanism which prevents a substrate from falling down, when the substrate is taken out from a substrate support mechanism for including and holding the substrate which is a processing object.SOLUTION: The substrate support mechanism SSM includes: a first support section D for holding the substrate with a processing face exposed; an intermediate support section ISS of a ring form, which is arranged along a peripheral of an opening part provided in the first support section; and a heat absorbing section H of a flat form, which includes a flange shaped first part ISI for supporting the substrate contacting to an outer peripheral region of a surface of the substrate W, and a flange shaped second part ISO contacting to a rear face of the substrate set in the first part. The heat absorbing section is constituted so as to be divided into a first heat absorbing section HO contacting to an outer peripheral region of the rear face of the substrate, and a second heat absorbing section HI including a part A having a face overlapping and contacting to the first heat absorbing section.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a substrate support mechanism that internally holds a substrate to be processed in a vacuum processing apparatus. More specifically, the present invention relates to a substrate support mechanism capable of avoiding adsorption of a heat absorbing portion to a substrate when removing the substrate.

  2. Description of the Related Art In recent years, in a vacuum processing apparatus such as vapor deposition, sputtering, or CVD, a single-wafer-type substrate supporting mechanism has been employed to simultaneously process a large number of substrates to be processed. In such a substrate supporting mechanism, it is necessary to keep the temperature in the substrate plane uniform in order to obtain, for example, a uniform film for each substrate. Conventionally, in order to keep the temperature in the substrate surface during processing at a desired temperature, a heat absorbing portion called a heat sink is arranged on the back surface side of the substrate (Patent Documents 1 and 2).

  The heat sink is arranged so as to be in contact with the back surface (non-processed surface) side of the substrate, and functions, for example, to keep the temperature of the surface (processed surface) of the substrate on which the coating is formed uniform. For this reason, as disclosed in Patent Literatures 1 and 2, an integrated object is suitably used for the heat sink. Therefore, the heat sink is held in contact with the back surface (non-processed surface) of the substrate in a reduced-pressure atmosphere, for example, during the film forming process. When removing the substrate after the film formation process, an operation of removing the heat sink on the back surface side of the substrate and then removing the substrate is performed in an atmospheric pressure atmosphere.

  When the substrate is set (attached), the substrate and the heat sink provided thereon are both at room temperature in an atmospheric pressure atmosphere, and can be easily handled individually. However, care must be taken when releasing (removing) the board. This is because the substrate and the heat sink that have returned from the reduced pressure atmosphere to the atmospheric pressure atmosphere may be in a state where the substrate and the heat sink are adsorbed by the influence of the film forming history and the heat history under the reduced pressure. When the heat sink in such a state is taken out, the substrate adsorbed on the heat sink is also removed together.

If the suction force of the substrate to the heat sink is small, the substrate may fall off from the heat sink during the work of removing the heat sink, and the substrate may be damaged. Conversely, if the suction force of the substrate to the heat sink is large, there is a possibility that the substrate may be damaged when an external force is applied between the substrate and the heat sink to peel the substrate from the heat sink.
For this reason, development of a substrate support mechanism that can avoid adsorption of the heat absorbing portion to the substrate when removing the substrate has been expected.

JP-A-9-115835 JP 2001-203231 A

  The present invention has been devised in view of such a conventional situation, and holds and holds a substrate which is a processing target in a vacuum processing apparatus. It is an object to provide a substrate support mechanism that can be avoided.

The substrate support mechanism according to the present invention,
A substrate support mechanism that is disposed in an internal space of the vacuum processing apparatus and holds and holds a substrate to be processed,
A first support unit that holds the substrate by exposing the surface to be processed,
A ring-shaped intermediate support disposed along the periphery of the opening provided in the first support,
The intermediate support portion is a flange-shaped first portion that contacts the outer peripheral region of the surface of the substrate that functions as a surface to be processed and supports the substrate, and a flange-shaped second portion that is in contact with the back surface of the first support portion. Comprising a flat heat absorbing portion disposed in contact with the back surface of the substrate mounted on the first portion,
The heat absorbing portion is a first heat absorbing portion in contact with an outer peripheral region of the back surface of the substrate, and a portion A having a surface overlapping and contacting the first heat absorbing portion and a portion B having a surface in contact with a central region of the back surface of the substrate. The second heat absorbing portion is configured to be dividable.

In the substrate support mechanism according to the present invention, it is preferable that the portion A constituting the second heat absorbing portion has a cutout portion so that the first heat absorbing portion can be locally viewed.
It is preferable that the portion A includes a plurality of the notches, and the notches are arranged at positions facing each other.

In the substrate support mechanism according to the present invention, it is preferable that the first heat absorbing portion further includes a flange-shaped portion that is in contact with a back surface of the second portion that forms the intermediate support portion.
In the second heat absorbing portion, it is preferable that the flange-shaped second portion that is in contact with the back surface of the first heat absorbing portion further includes a wedge-shaped gap at an end thereof that is separated from the back surface of the first support portion.

In the substrate support mechanism of the present invention, the heat absorbing portion has a first heat absorbing portion in contact with an outer peripheral region of the back surface of the substrate, and a portion A having a surface overlapping and in contact with the first heat absorbing portion, and a center of the back surface of the substrate. It is configured to be dividable into a second heat absorbing portion including a portion B having a surface in contact with the region. Accordingly, when removing the substrate, first, only the second heat absorbing portion constituting the heat absorbing portion is removed, and then the first heat absorbing portion constituting the heat absorbing portion can be removed. That is, in the step of removing the second heat absorbing portion that is in contact with the central region of the back surface of the substrate, the first heat absorbing portion remains in contact with the outer peripheral region of the substrate. To eliminate. Next, when removing the first heat absorbing portion, the remaining area in contact with the back surface of the substrate is reduced. Therefore, the first suction portion hardly adheres to the back surface of the substrate, and the first heat absorption portion can be easily removed from the back surface of the substrate. Therefore, after removing the heat absorbing portions (the first heat absorbing portion and the second heat absorbing portion), only the substrate can be reliably taken out.
Therefore, the present invention provides a substrate support mechanism that can hold and hold a substrate, which is an object to be processed, in a vacuum processing apparatus and can avoid adsorption of a heat absorbing portion to the substrate when removing the substrate.

FIG. 2 is a schematic cross-sectional view of a vacuum processing device. The schematic plan view which looked at the 1st support part from the upper part of the vacuum processing apparatus. FIG. 3 is a schematic cross-sectional view showing a first configuration example of a substrate support mechanism. FIG. 4 is a schematic cross-sectional view showing a procedure for attaching a substrate and a heat absorbing section to the substrate support mechanism of FIG. 3. FIG. 4C is a schematic sectional view showing a step subsequent to FIG. 4A. FIG. 4C is a schematic sectional view showing a step subsequent to FIG. 4B. FIG. 4C is a schematic cross-sectional view showing the next step of FIG. 4C. FIG. 4D is a schematic sectional view showing a step subsequent to FIG. 4D. FIG. 4 is a schematic cross-sectional view showing a procedure for removing a substrate and a heat absorbing section from the substrate support mechanism of FIG. 3. FIG. 5C is a schematic sectional view showing a step subsequent to FIG. 5A. FIG. 5C is a schematic sectional view showing a step subsequent to FIG. 5B. FIG. 5C is a schematic sectional view showing a step subsequent to FIG. 5C. FIG. 5D is a schematic sectional view showing a step subsequent to FIG. 5D. FIG. 4 is a schematic cross-sectional view illustrating a second configuration example of the substrate support mechanism. FIG. 9 is a schematic cross-sectional view illustrating a third configuration example of the substrate support mechanism. FIG. 9 is a schematic cross-sectional view illustrating an example of a conventional substrate support mechanism. FIG. 9 is a schematic cross-sectional view showing a procedure for attaching a substrate and a heat absorbing section to the substrate support mechanism of FIG. 8. FIG. 9C is a schematic sectional view showing a step subsequent to FIG. 9A. FIG. 9B is a schematic sectional view showing a step subsequent to FIG. 9B. FIG. 9 is a schematic cross-sectional view showing a procedure for removing a substrate and a heat absorbing section from the substrate support mechanism of FIG. 8. FIG. 10B is a schematic sectional view showing a step subsequent to FIG. 10A. FIG. 10B is a schematic sectional view showing a step subsequent to FIG. 10B. FIG. 10C is a schematic sectional view showing a step subsequent to FIG. 10C.

  Hereinafter, a substrate supporting mechanism according to an embodiment of the present invention, and a procedure for attaching a substrate and a heat absorbing section to the substrate supporting mechanism, and a procedure for removing the substrate and the heat absorbing section from the substrate supporting mechanism, based on the drawings. explain.

  FIG. 1 is a schematic sectional view of the vacuum processing apparatus C. Here, an example in which the vacuum processing apparatus is a deposition apparatus using a vapor deposition method will be described. The internal space CS of the vacuum processing apparatus C can be depressurized by a desired exhaust unit P. A crucible G having a vapor deposition member GM as a vapor deposition source is arranged below the internal space. As viewed from the crucible G, above the internal space via the shutter ST, a plurality of substrate support mechanisms SSM are provided on a first support portion D that exposes a surface to be processed and holds the substrate. The substrate support mechanism SSM is disposed in the internal space CS of the vacuum processing apparatus C, and internally holds the substrate W to be processed. As the first support D, a dome-shaped one having a concave surface on the processing surface side of the substrate is preferably used.

  The shutter ST is supported by the rotating shaft A2, and controls passage or blocking of the vapor deposition member from the crucible G to the substrate support mechanism by opening and closing the sky above the crucible G. Here, the arrow R2 indicates the rotation direction of the rotation axis A2.

  FIG. 2 is a schematic plan view of the first support D viewed from above the vacuum processing apparatus C. As shown in FIGS. 1 and 2, the first support portion D is rotatably supported by a rotation axis A1. Here, the arrow R1 indicates the rotation direction of the rotation axis A1. FIG. 2 is a configuration example in which four substrate support mechanisms SSM1 to SSM4 (SSM) are arranged on the first support portion D.

  1 and 2 illustrate an example in which four substrate support mechanisms are provided for one first support D, but the present invention is not limited to this. When two or more first support portions D are arranged in the internal space CS of the vacuum processing apparatus C, or when the number of substrate support mechanisms SSM other than four is arranged for one first support portion D, In this case, the substrate supporting mechanism SSM of the present invention can be applied.

FIG. 3 is a schematic cross-sectional view illustrating a first configuration example of the substrate support mechanism SSM.
As shown in FIG. 3, the substrate support mechanism SSM includes a first (for example, dome-shaped) support portion D that exposes a surface to be processed and holds the substrate, and an opening provided in the first support portion D. And a ring-shaped intermediate support portion IS arranged along the periphery of the portion. As the first support D and the intermediate support IS, for example, SUS or the like is used.

  The intermediate support IS constituting the substrate support mechanism SSM includes a flange-shaped first portion ISI that supports the substrate W in contact with an outer peripheral area of the surface of the substrate W that functions as a surface to be processed, and a first support D. A flange-shaped second portion ISO is provided in contact with the back surface. The first part ISI and the second part ISO are connected by a third part ISS, and the third part ISS is arranged along the inner surface of the opening provided in the first support part D.

Further, the substrate support mechanism SSM includes a flat heat absorbing portion (heat sink) H disposed in contact with the back surface of the substrate W placed on the first portion ISI of the intermediate support portion IS.
The heat absorbing portion H has a first heat absorbing portion HO in contact with an outer peripheral region of the back surface of the substrate, and a portion A having a surface overlapping and contacting the first heat absorbing portion and a portion B having a surface in contact with a central region of the back surface of the substrate. And a second heat absorbing portion HI. The first heat absorbing portion HO and the second heat absorbing portion HI are configured to be divisible.

  With the above configuration, the surface of the substrate W included in the substrate support mechanism SSM is shielded without depositing a region supported (covered) by the first portion ISI of the intermediate support portion IS. On the other hand, a film is formed on the remaining area (the central area of the substrate W) on the surface of the substrate W located at the opening of the first portion ISI.

Further, with the above configuration, the back surface of the substrate W included in the substrate supporting mechanism SSM is in contact with the heat absorbing portion H including the dividable first heat absorbing portion HO and the second heat absorbing portion HI over the entire area.
The outer peripheral area WBSO on the back surface of the substrate W is in contact with the front surface HOU of the first heat absorbing portion HO, and the central region WBSI on the back surface of the substrate W is in contact with the front surface HIU1 in the central region of the second heat absorbing portion HI. Further, the front surface HIU2 in the outer peripheral region of the second heat absorbing portion HI is arranged in contact with and overlaps the back surface HOB of the first heat absorbing portion HO.

By adjusting the thickness of the second heat absorbing portion HI so as to include the thickness of the first heat absorbing portion HO, the heat absorbing portion H has a desired thickness. By forming the first heat absorbing portion HO and the second heat absorbing portion HI from the same member (a lightweight member having excellent thermal conductivity, for example, aluminum), the heat absorbing portion H having a constant thickness in contact with the back surface of the substrate W is formed. Can be provided.
Such division allows the heat absorbing portion to be detached in two stages, as described later.

  Further, as shown in FIG. 3, the portion A constituting the second heat absorbing portion HI, that is, the portion A having a surface overlapping and in contact with the first heat absorbing portion HO can be seen locally by the first heat absorbing portion HO. It is preferable to provide such a notch N (a portion depicted by a dotted line in FIG. 3: Notch). By providing the cutout portion N, it is easy to remove the second heat absorbing portion HI in contact with the central region WBSI on the back surface of the substrate W from the substrate while leaving the first heat absorbing portion HO in contact with the outer peripheral region WBSO on the back surface of the substrate W. It becomes.

  Further, it is preferable that the portion A includes a plurality of notches N, and the notches N are arranged at positions facing each other. As shown in FIG. 3, by providing two notches N1 and N2 (N) at positions facing each other, for example, the robot hand can put two fingers on each of the two notches N1 and N2 (N). , And the operation of picking out only the second heat absorbing portion HI can be stably performed.

Hereinafter, a procedure (setup) of attaching the substrate and the heat absorbing unit to the substrate support mechanism of FIG. 3 will be described with reference to FIGS. 4A to 4E.
First, the substrate W sucked and held by the vacuum tweezers VT is lowered toward the intermediate support portion IS provided at the opening of the first support portion D (FIGS. 4A and 4B). The arrow a1 indicates the direction in which the substrate W descends.
Next, the ring-shaped first heat absorbing portion HO sucked and held by the vacuum tweezers VT is lowered toward the back surface of the substrate W (FIG. 4C). Arrow a2 indicates the direction in which the first heat absorbing portion HO descends.
Further, the second heat absorbing portion HI supported by the robot hand (not shown) is lowered toward the back surface of the first heat absorbing portion HO and the back surface of the substrate W (FIG. 4D). Arrow a3 indicates the direction in which the second heat absorbing portion HI descends.
4A to 4E, the substrate support mechanism SSM shown in FIGS. 1 and 3 is obtained (FIG. 4E).

Next, a procedure (release) of removing the substrate and the heat absorbing portion from the substrate support mechanism of FIG. 3 will be described with reference to FIGS. 5A to 5E.
First, the second heat absorbing portion HI is removed upward from the substrate support mechanism SSM shown in FIG. 4E (FIGS. 1 and 3) (FIGS. 5A and 5B). The arrow b1 indicates the rising direction of the second heat absorbing portion HI.
Next, the ring-shaped first heat absorbing portion HO sucked and held by the vacuum tweezers VT is removed upward from the back surface of the substrate W (FIG. 5C). An arrow b2 indicates a rising direction of the first heat absorbing portion HO.
Next, the substrate W sucked and held by the vacuum tweezers VT is taken out upward (FIG. 5D). An arrow b3 indicates a rising direction of the substrate W.
Finally, if necessary, the intermediate support IS is removed from the first support D (FIG. 5E).
5A to 5D, it is possible to take out (collect) the film-formed substrate W from the substrate support mechanism SSM shown in FIG. 4E (FIG. 1 and FIG. 3).
With the substrate support mechanism SSM of the present invention, when the second heat absorbing portion HI is removed, the substrate W is attracted to the second heat absorbing portion HI because the first heat absorbing portion HO remains on the back surface of the substrate W. Is eliminated.

Hereinafter, for comparison with the present invention, a configuration in which a conventional heat absorbing portion is integrated will be described.
FIG. 8 is a schematic sectional view showing an example of a conventional substrate support mechanism SSMZ (SSM). The conventional substrate support mechanism SSMZ is different from the above-described substrate support mechanism of the present invention (FIG. 3) only in that the heat absorbing portion H is integrated.
9A to 9C are schematic cross-sectional views showing a procedure for attaching the substrate W and the heat absorbing portion H to the substrate support mechanism of FIG. In the mounting procedure, no problem occurs as in the case of the substrate support mechanism (FIG. 3) of the present invention.
10A to 10D are schematic cross-sectional views showing a procedure for removing the substrate W and the heat absorbing portion H from the substrate support mechanism of FIG. As shown in FIGS. 10A to 10C, when the heat absorbing portion H is moved upward to remove it (d1 → d2), the substrate W adsorbed on the heat absorbing portion H moves together with the heat absorbing portion H. If the adsorption is weak, there is a problem that the substrate W separates from the heat absorbing portion H during the movement (up) and falls. The small arrow shown in FIG. 10D indicates the drop of the substrate W. This drop is a phenomenon that occurs unexpectedly and has been difficult to control.

  In the substrate supporting mechanism according to the present invention shown in FIG. 3, since the heat absorbing portion H including the first heat absorbing portion HO and the second heat absorbing portion HI is employed, a problem that occurs unexpectedly in the above-described conventional substrate supporting mechanism is avoided. Will be resolved.

FIG. 6 is a schematic sectional view showing a second configuration example of the substrate support mechanism.
The substrate support mechanism of FIG. 6 differs from the substrate support mechanism of FIG. 3 only in that the first heat absorbing portion HO further includes a flange-shaped portion HOT2 that is in contact with the back surface of the second portion ISO constituting the intermediate support portion IS.
By having such a flange-shaped portion HOT2, the first heat absorbing portion HO makes contact with the back surface of the second portion ISO forming the intermediate support portion IS in addition to the back surface of the substrate W. The obtained state is obtained. Therefore, when the second heat absorbing portion HI is removed upward, the first heat absorbing portion HO can increase the force acting to suppress the substrate W so as to oppose this.
Therefore, according to the configuration of FIG. 6, a substrate supporting mechanism that can further avoid the adsorption of the heat absorbing portion to the substrate when removing the first heat absorbing portion HO is obtained.

FIG. 7 is a schematic cross-sectional view illustrating a third configuration example of the substrate support mechanism.
In the substrate support mechanism of FIG. 7, the second heat absorbing portion HI has a wedge-shaped gap HIU3 in which a flange-shaped second portion in contact with the back surface of the first heat absorbing portion HO has an end portion separated from the back surface of the first support portion. Only in that the substrate support mechanism of FIG.
By having such a wedge-shaped space HIU3, an appropriate jig (not shown) is inserted into the wedge-shaped space HIU3, and the second heat-absorbing portion HI is formed from the back surface of the first heat-absorbing portion HO using the principle of leverage. It is possible to operate so as to deviate.
Therefore, according to the configuration of FIG. 7, a substrate supporting mechanism that further facilitates the operation of removing the second heat absorbing portion HI is obtained.

  Although the substrate support mechanism according to the present invention has been described above, the present invention is not limited to this, and can be appropriately changed without departing from the spirit of the invention.

  The present invention is widely applicable to a substrate support mechanism. In particular, the present invention is suitable as a single-wafer-type substrate support mechanism for simultaneously processing a large number of substrates to be processed in a vacuum processing apparatus such as vapor deposition, sputtering, or CVD.

  D first support part, IS intermediate support part, ISI first part, ISO second part, ISS third part, H heat absorption part, HO first heat absorption part, HOU first heat absorption part surface, HOB first heat absorption part Back surface, HI second heat absorbing portion, surface in the central region of HIU1 second heat absorbing portion, surface in the outer peripheral region of HIU2 second heat absorbing portion, SSM (SSM1 to SSM4) substrate support mechanism, W substrate, WBSO substrate Outer peripheral area, central area on the back surface of the WBSI substrate.

Claims (5)

A substrate support mechanism that is disposed in an internal space of the vacuum processing apparatus and holds and holds a substrate to be processed,
A first support unit that holds the substrate by exposing the surface to be processed,
A ring-shaped intermediate support disposed along the periphery of the opening provided in the first support,
The intermediate support portion is a flange-shaped first portion that contacts the outer peripheral region of the surface of the substrate that functions as a surface to be processed and supports the substrate, and a flange-shaped second portion that is in contact with the back surface of the first support portion. Comprising a flat heat absorbing portion disposed in contact with the back surface of the substrate mounted on the first portion,
The heat absorbing portion is a first heat absorbing portion in contact with an outer peripheral region of the back surface of the substrate, and a portion A having a surface overlapping and contacting the first heat absorbing portion and a portion B having a surface in contact with a central region of the back surface of the substrate. The second heat absorbing portion is configured to be dividable,
A substrate support mechanism, characterized in that: The portion A configuring the second heat absorbing portion includes a cutout portion so that the first heat absorbing portion can be locally viewed.
The substrate support mechanism according to claim 1, wherein: The site A includes a plurality of the notches, and the notches are arranged at positions facing each other.
The substrate support mechanism according to claim 2, wherein: The first heat absorbing portion further includes a flange-shaped portion in contact with the back surface of the second portion constituting the intermediate support portion,
The substrate support mechanism according to claim 1, wherein: In the second heat absorbing portion, a flange-shaped second portion that is in contact with the back surface of the first heat absorbing portion further includes a wedge-shaped gap that is separated from the back surface of the first support portion at an end thereof.
The substrate support mechanism according to claim 4, wherein:

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