JP2012156196A - Susceptor device and vapor phase growth apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a susceptor device adaptable to the warpage in deposition on a wide variety of growth substrates.SOLUTION: The susceptor device having a mounting region for mounting a growth substrate is provided with a mounting section consisting of a plurality of heat radiation parts disposed, respectively, in division areas obtained by dividing the mounting region, each having a heat radiation surface facing the growth substrate, and movable in the thickness direction of the growth substrate.

Description

  The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a vapor phase growth apparatus that performs epitaxial growth of a semiconductor crystal, and more particularly, to a susceptor apparatus that holds a growth substrate and a vapor phase growth apparatus using the same.

  A group III-V growth substrate mainly used for an optical semiconductor element (light emitting diode) is generally manufactured (crystal growth) by using a MOCVD method (Metal Organic Chemical Vapor Deposition). Specifically, in a reaction furnace, a reaction gas is sprayed onto the surface of a growth substrate placed on a susceptor heated by a heater, and the reaction gas is decomposed and reacted on the growth substrate to grow a semiconductor film. They are stacked on a substrate (see Patent Document 1). In such a manufacturing method using an MOCVD apparatus, there is a problem in that variations in device characteristics increase due to generation of a non-uniform temperature distribution due to warpage of the growth substrate, resulting in a decrease in device manufacturing yield. That is, when the growth substrate is warped during crystal growth, the growth substrate floats from the susceptor, the surface temperature is lower than the surroundings, and the reaction gas is decomposed and the reaction efficiency is different at a part of the growth substrate surface. The device manufacturing yield was reduced without obtaining the thickness and composition.

On the other hand, the problem of the warp of the growth substrate is that the growth substrate of a group III nitride semiconductor, especially Al _x In _y Ga _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z = 1). Is currently inevitable due to the following causes. First, the thermal expansion coefficient of the semiconductor film differs depending on the composition of the Al _x In _y Ga _z N layer, and a plurality of them are stacked. Since the optimum crystal growth temperature in each layer is also different, crystal growth is performed at each optimum temperature. While a plurality of Al _x In _y Ga _z N layers having different compositions change in the range of about 400 to 1200 ° C., the growth substrate (also referred to as a wafer) warps due to the difference in thermal expansion coefficient of each layer. In particular, group III nitride semiconductors often use growth substrates made of sapphire or SiC that can be epitaxially grown at low cost (hetero substrates, heterogeneous substrates). Since these have a thermal expansion coefficient different from that of the laminated Al _x In _y Ga _z N layer, the wafer is likely to warp during crystal growth (difference in thermal expansion coefficient of each layer). Second, since the layers of the epitaxial film are bonded at an atomic level, an internal stress is generated if the lattice constant is different. Therefore, the wafer warps even under a certain temperature. The lattice constant differs between the heterogeneous substrate and the Al _x In _y Ga _z N layer, and also differs in the composition of each layer (difference in the lattice constant of each layer). Thirdly, the back surface (installation surface) of the growth substrate can be adjusted to a certain roughness in order to efficiently receive heat from the susceptor and to make the wafer flat during crystal growth of a specific layer. is there. On the other hand, the surface of the growth substrate (growth surface on which the semiconductor film is laminated) is required to have a roughness that is smoother than the roughness required for epitaxial growth, that is, the roughness of the back surface. Due to the difference in roughness (surface area between the installation surface and the growth surface), the growth substrate alone warps due to temperature change (difference in surface treatment between the front and back surfaces of the growth substrate).

  As described above, the size of the warpage of the wafer changes depending on various factors such as the growth substrate to be selected and the layer configuration of the semiconductor film (the number of stacked layers, the thickness of each layer, and the composition), thereby obtaining a high device manufacturing yield. For this purpose, even if the wafer is warped during crystal growth, it is necessary to uniformly heat the entire wafer and to make the decomposition of the reaction gas and the efficiency of the reaction constant.

  In view of these problems, in the prior art, as shown in FIG. 1A, the above-described temperature distribution due to the warpage of the wafer is generated by providing a recess in advance between the wafer and the substrate holder (or susceptor). It has been proposed to suppress (see Patent Document 2).

Japanese Patent No. 2628404 JP 2010-080614 A

  However, in the prior art, during crystal growth, for example, as shown in FIG. 1B, when the wafer is warped and the central portion sinks, the distance from the substrate holder (or susceptor) differs between the center and the periphery of the wafer. A wafer temperature distribution as shown in FIG. As described above, there is a case where improvement of the element manufacturing yield is insufficient even by the conventional technique.

  Furthermore, in the prior art, as shown in FIG. 1C, when the wafer is warped and deformed during crystal growth, the distance between the wafer and the substrate holder is constant over the entire surface. Has proposed a substrate holder having a curved recess having the same shape as the warp shape (see Patent Document 2). As a result, the temperature distribution is improved, but as described above, the size of the warpage of the wafer is not limited to the growth substrate and the type of the semiconductor film laminated thereon, but also the layer configuration of the semiconductor film, that is, the number of laminated layers, Since it depends on the order, the composition of each layer, the thickness of each layer, etc., in order to make the temperature distribution uniform, at least the type of wafer to be manufactured, the number of stacked semiconductor films, the stacking order, the composition of each layer, or It is necessary to prepare a plurality of susceptors or substrate holders having different concave shapes depending on the thickness of each layer. Therefore, in the prior art, the parts cost is high. Further, as described above, since the magnitude of the warpage of the wafer changes depending on the temperature, it is difficult to optimize the temperature distribution even during the crystal growth of all the semiconductor layers even with the substrate holder for one wafer.

  In view of the above problems, an object of the present invention is to provide a susceptor device that can cope with the amount of warpage in film formation on a variety of growth substrates, and a vapor phase growth apparatus using the susceptor device.

  A susceptor device having a mounting region on which a growth substrate is placed according to the present invention has a heat radiation surface that is disposed in each of divided regions obtained by dividing the mounting region and that faces each growth substrate. It has the mounting part which consists of a several thermal radiation part movable in the thickness direction of a board | substrate.

  In such a susceptor device, the heat radiating portion can include a heat diffusion portion having legs extending in a direction away from the growth substrate, that is, in the thickness direction of the growth substrate, and surrounding the legs separately.

  In such a susceptor device, the thermal diffusion part can be formed of a material having a higher thermal conductivity than the leg part. Since the heat radiation portion and the heat diffusion portion made of a material having high thermal conductivity are provided so as to surround the leg portion, heat can be quickly transferred to the leg portion and the mounting portion at the center of the susceptor. Thereby, even if the mounting part is divided into a plurality of heat radiation parts, there is no temperature difference between the outside of the susceptor (the side close to the heating part surrounding the heat diffusion part) and the center.

  In such a susceptor device, at least three protrusions in contact with the growth substrate can be provided in the plurality of thermal radiation portions.

  In such a susceptor device, the mounting area can be divided into concentric circles, sectors, or grids.

  In the vapor phase growth apparatus according to the present invention, the above susceptor apparatus on which a growth substrate is placed in a reaction furnace, a gas injection pipe for supplying a raw material gas onto the growth substrate, and a warp amount distribution on the surface of the growth substrate. A substrate warpage amount measuring device to be detected, and a drive mechanism for driving the heat radiation portion in the thickness direction of the growth substrate in accordance with a warp amount distribution signal of the growth substrate surface from the substrate warpage amount measuring device. And Since the shape of the susceptor recess (that is, the heat radiation surface) can be deformed during crystal growth, crystal growth can be performed so that the temperature distribution in the wafer surface is uniform for all the layers constituting the semiconductor film. This reduces variations in film thickness and composition within the wafer surface and improves device manufacturing yield.

  In such a vapor phase growth apparatus, the drive mechanism includes a susceptor holding thin plate portion connected to all or a plurality of lower portions of the legs, and a deformation mechanism connected to the lower portion of the susceptor holding thin plate portion and capable of expanding and contracting in the thickness direction of the growth substrate. And can be configured. In such a vapor phase growth apparatus, the drive mechanism can be configured by a deformation mechanism that is connected to the lower part of each leg portion and can expand and contract in the thickness direction of the growth substrate.

  In the vapor phase growth apparatus according to the present invention, the temperature distribution in the wafer surface is further improved by changing the shape of the concave portion of the susceptor so that the distance between the wafer and the susceptor is always constant over the entire area during crystal growth. Uniformity can be achieved and the device manufacturing yield can be improved. According to the present invention, it is possible to configure an MOCVD apparatus for manufacturing a group III nitride growth substrate that performs crystal growth using a heterogeneous substrate.

  By making the shape of the susceptor recesses deformable during crystal growth, crystal growth can be performed so that the temperature distribution in the wafer surface is uniform for all the layers constituting the semiconductor film. This reduces variations in film thickness and composition within the wafer surface and improves device manufacturing yield.

  By measuring the amount of warping of the wafer during crystal growth by a known measuring method and feeding back the value to the driving mechanism of the susceptor, it becomes possible to deform the concave shape of the susceptor optimal for each layer. Since it is not necessary to prepare a substrate holder or the like having a different concave shape for each product as in the prior art, the cost of the apparatus can be reduced.

It is a schematic sectional drawing which shows a wafer and a substrate holder typically. It is a graph which shows typically temperature distribution of a wafer to distance from a wafer center. It is a schematic sectional drawing which shows schematic structure of the MOCVD apparatus which has the reaction furnace provided with the susceptor apparatus of embodiment by this invention. It is a schematic sectional drawing of the mounting part of the susceptor apparatus of the embodiment. It is a schematic plan view of the mounting part seen from the heat radiation surface side of the susceptor device of the same embodiment. It is a schematic perspective view of the mounting part of the susceptor device of the embodiment. It is a schematic plan view of the mounting part of the susceptor apparatus of other embodiment by this invention. It is a schematic perspective view of the assembly part of the mounting part and leg part of the susceptor apparatus of embodiment by this invention. It is a schematic sectional drawing in alignment with line AA of FIG. 8 seen from the leg part side of the embodiment. It is a schematic perspective view of the thermal diffusion part of the susceptor device of the embodiment. It is a schematic perspective view of the assembly of the mounting part of the susceptor apparatus of embodiment by this invention, a leg part, and a thermal-diffusion part. It is a schematic sectional drawing in alignment with line BB of FIG. 11 seen from the leg part side of the embodiment. It is a schematic plan view of the susceptor holding | maintenance thin plate part of the susceptor apparatus of other embodiment by this invention. It is a schematic sectional drawing which shows schematic structure of the principal part of the susceptor apparatus of other embodiment by this invention.

  Hereinafter, a vapor phase growth apparatus using a susceptor apparatus according to an embodiment of the present invention, that is, an MOCVD apparatus, and a crystal growth method using the same will be described with reference to the drawings.

  FIG. 3 shows a schematic configuration of an MOCVD apparatus having a reaction furnace in which an example of the susceptor apparatus of the embodiment is provided. In FIG. 3, 1 is a susceptor device, 2 is a reactor, 3 is a flow channel, 5 is a wafer, and 6 is a measurement unit.

  The flow channel 3 in the reaction furnace 2 has an opening for exposing the growth substrate (wafer) 5 mounted on the mounting portion of the susceptor device 1, and guides the source gas onto the wafer 5. The flow channel 3 is made of quartz glass, SiC, or the like. In order to observe the surface of the wafer 5 using the laser beam by the measuring unit 6, the upper portion of the wafer 5 of the flow channel 3 and the window portion W of the upper portion of the reaction furnace 2 are made of a translucent material. The flow channel 3 includes a gas injection pipe Gin and a gas exhaust pipe Gout, and an opening is formed below the window W between the gas injection pipe and the gas exhaust pipe. The wafer 5 is placed on the mounting portion 10 of the susceptor device 1 through this opening, and is supplied from the gas injection pipe Gin and held so as to be exposed to the source gas and the carrier gas. In this example, during the crystal growth, the raw material gas and the carrier gas are supplied from the gas injection tube Gin on the side of the growth substrate 3 to perform the crystal growth. And a carrier gas may be supplied.

  The measurement unit 6 is attached outside the reaction furnace 2 above the wafer 5. The measurement unit 6 includes a laser light source 61 and a detection unit 62. The laser unit irradiates the surface of the wafer 5 with a laser beam through the window W. Similarly, the detection unit 62 detects reflected light from the window W in the upper part of the reaction furnace. The amount of warpage of the surface of the wafer 5 is measured from the diffusion of the reflected light. For example, the measurement unit 6 measures a warp by using a substrate warp amount measuring device such as EpiCurveTT (registered trademark) manufactured by RayTec, and extracts the data. The measurement unit 6 is connected to the control unit Cont, and sends warpage data to the control unit Cont.

  The susceptor device 1 is mounted via a mounting portion 10 (a plurality of divided heat radiation portions described later) that is a movable susceptor that holds the wafer 5, a plurality of legs 20 connected to the mounting portion, and the legs. And a drive mechanism Dr that moves the unit 10.

  The susceptor device 1 further includes a heat diffusion unit 30 that heats the legs 20 while separating them. A heating part H is provided around the thermal diffusion part 30 so as to be spaced apart and heated.

  The drive mechanism Dr attached below the leg portion 20 of the susceptor device 1 is a mechanism for moving each leg portion 20 up and down, and includes a susceptor holding thin plate portion 40 and a piezo actuator 41. As the susceptor holding thin plate portion 40, for example, a circular metal plate having a thickness of several mm is used. The shape of the susceptor holding thin plate portion 40 may be a simple plate shape as long as the leg portion 20 can be held and can be deformed by the piezo actuator 41.

  The susceptor holding thin plate portion 40 and the heat diffusing portion 30 are each held at a predetermined position by a step provided on the peripheral edge of the cup-shaped support portion 42. A piezo actuator 41 is mounted on the bottom of the support portion 42. The piezo actuator 41 is connected to the control unit Cont and is driven by a signal from the control unit Cont.

  Each of the plurality of heat radiation parts is connected to the susceptor holding thin plate part 40 via the leg part 20. The central portion of the susceptor holding thin plate portion 40 is connected to the drive portion of the piezo actuator 41. The outer peripheral part of the susceptor holding thin plate part 40 is installed as a fulcrum. The susceptor holding thin plate portion 40 bends according to the expansion and contraction of the piezo actuator 41, and deforms the heat radiation surface shape of the mounting portion 10 connected via the leg portion 20 in accordance with the warp of the wafer 5.

  The control part Cont performs feedback control of the drive mechanism Dr attached below the leg part 20 of the susceptor device 1 based on the data of the warp magnitude from the measurement unit 6, and controls the height of each heat radiation part. As a result, the mounting portion 10 is deformed in accordance with the shape of the wafer 5. The drive mechanism Dr allows the piezoelectric actuator 41 to expand and contract in accordance with the amount of warpage detected by the measurement unit 6 so that the height of each heat radiation portion of the mounting portion can be moved up and down.

  It is preferable that the susceptor device 1, the heating part H, and the support part 42 are surrounded by a heat insulating material IM. It is preferable that the support portion 42 is also formed of a heat insulating material so as not to receive heat from the heating portion H as much as possible.

  The susceptor device 1 including the support portion 42 can be rotated at an arbitrary number of rotations by a susceptor rotation mechanism portion (not shown) provided outside. The susceptor device 1 including the support portion 42 is connected to the susceptor rotation mechanism portion outside the reactor 2 through an airtight seal mechanism 43 using a Wilson seal, an O-ring seal, a bellows seal, a magnetic coupling seal, a magnetic fluid seal, or the like. It is connected. The susceptor device 1 may be rotated during crystal growth in order to reduce the influence of the supply amount distribution (gas flow distribution) of the source gas.

  Below, the component of said susceptor apparatus 1 is demonstrated in detail.

--- Mounting part--
FIG. 4 is a sectional view of the mounting portion 10 of the susceptor device 1 according to the embodiment to which the present invention is applied. The mounting unit 10 includes a plurality of heat radiation units 10a and 10b arranged in each of the divided regions P1, P2, P3, and P4 obtained by concentrically dividing the circular mounting region P facing the wafer 5 from the center. 10c, 10d. All the heat radiation parts have a heat radiation surface RA facing the wafer 5. Therefore, as shown in the plan view of FIG. 5, the mounting portion 10 has a circular tube shape in which a circular tube-shaped gap is loosely fitted in sequence to the central cylindrical heat radiation portion 10 a like a nested structure. It consists of a heat radiation part 10b, a heat radiation part 10c, and a heat radiation part 10d. Each of the heat radiation portions 10a, 10b, 10c, and 10d of the mounting portion 10 is movable in the thickness direction TK of the wafer so as to face the wafer 5. As shown in the perspective view of FIG. A susceptor surface having the same height can be formed from the radiating portion 10a to the outer circular tube-shaped heat radiating portion 10d. As shown in the perspective view of FIG. The depths of the heat radiation surfaces of the tubular heat radiation portions 10b, 10c, and 10d can be stepped in order from the inside to the outside. Specifically, as shown in FIG. 6B, the mounting portion 10 on which the wafer 5 is placed during crystal growth of the susceptor device 1 is divided into a plurality of heat radiation portions, and each heat radiation portion is vertically moved. Since it is movable, the shape of the so-called susceptor recess can be changed in accordance with the wafer 5 during crystal growth. As a result, the distance between the mounting portion 10 and the wafer 5 is constant over almost the entire surface of the wafer, and the temperature distribution tends to be uniform.

  Preferably, at least a part of the heat radiation portion of the mounting portion 10 can be provided with a cone, a polygonal pyramid, or a hemispherical protrusion Pt. As a result, the wafer 5 can be supported by dots, so that the influence of heating due to heat conduction from the mounting portion 10 can be reduced, and the temperature distribution becomes uniform. The protrusions Pt may be formed integrally with the mounting portion 10, but it is more preferable that the protrusions Pt be made of another material having a lower thermal conductivity than the mounting portion 10 because the influence of the heat conduction can be reduced. It is only necessary to provide at least three protrusions Pt in contact with the wafer 5 in the plurality of heat radiation portions 10a, 10b, 10c, and 10d. This is because if there are at least three protrusions Pt, the wafer 5 can be supported on one plane determined at the contact point thereof. By making non-contact between the wafer 5 and the heat radiation part, it becomes difficult to be affected by warpage due to the presence or absence of heat conduction due to contact, and the wafer 5 can be kept at a uniform temperature throughout.

  When a general growth substrate, for example, a C-plane sapphire substrate is used, the mounting portion 10 is concentrically divided in the above example because it deforms into a bowl shape during crystal growth. However, the shape of each heat radiation portion of the mounting portion 10 Is not limited to the concentric circles, but, for example, as shown in the plan views of FIGS. 7A, 7B, 7C, and 7D, each has a lattice shape (see FIG. 7) that forms a heat radiation portion Rec including a rectangular heat radiation surface. 7 (a) (b)), a sector shape (FIG. 7 (c)) that becomes a heat radiation portion Sec having a fan-shaped heat radiation surface, and a heat radiation portion Hex each having a regular hexagonal heat radiation surface. Such a honeycomb shape (FIG. 7D) may be divided so as to be able to cope with more complicated deformation of the wafer 5.

  The material of the mounting portion 10 may be one used for a susceptor for a normal MOCVD apparatus. For example, carbon, quartz (silica), alumina, Si, SiC, boron nitride and the like are generally used in the manufacture of a group III nitride growth substrate. It is preferable that the mounting portion 10 be made of white paint, white boron nitride, and a heat insulating material around it so as not to receive heat from the heating portion H as much as possible.

--- Leg-
As shown in FIG. 8, each of the heat radiation portions 10 a, 10 b, 10 c, and 10 d of the mounting portion 10 is provided with a leg portion 20 that extends parallel to the thickness direction TK of the wafer 5 that is away from the wafer 5. As shown in FIG. 9, at least one leg portion 20 is connected to each of the heat radiation portions 10 a, 10 b, 10 c, 10 d of the mounting portion 10. For example, the central heat radiating portion 10a has one circular cross-section leg 20, the surrounding heat radiating portion 10b has four legs, 10c has eight legs, and 10d has eight sector-shaped cross-section legs. The units 20 are connected to each other. The leg portion 20 has a role of driving the mounting portion 10 up and down and a role of transmitting heat from the heat diffusion portion 30 to the mounting portion 10. The leg portions 20 are formed so as to be spaced apart from the gaps between the heat radiation portions 10 a, 10 b, 10 c, and 10 d, respectively, so that each leg portion 20 can be surrounded by the heat diffusion portion 30. Thereby, the surface area of the leg portion is increased, and the amount of heat that can be received from the heat diffusion unit 30 per unit time is increased. Any material can be used as the material used for the leg 20 as long as it is used for the susceptor for the above-described normal MOCVD apparatus. However, in order to efficiently absorb the heat from the thermal diffusion unit 30, carbon, SiC, etc. The black material is preferred. The leg portion 20 can be formed integrally with the heat diffusion portion 30 or as a separate body.

--- Heat diffusion part--
The heat diffusing unit 30 has a role of receiving heat from the heating unit H once and diffusing the heat uniformly throughout and then transferring the heat to each leg 20. As shown in FIG. 10, a through hole 31 parallel to the leg portion 20 is provided in the main body of the cylindrical heat diffusing portion 30, and all the leg portions 20 are loosely fitted in the through hole 31 as shown in FIG. The through holes 31 are perforated in a cross-sectional shape so that heat can be transferred from the side surfaces of the through holes 31 to the leg portions 20.

  FIG. 12 shows a cross section of the heat diffusing section 30, and in order to quickly transfer heat to the center of the heat diffusing section 30 far from the heating section H, as shown, the heat diffusing section 30 is radially spread from the center toward the outside. It is preferable to form a thick heat transfer portion HT.

  The thermal diffusion part 30 is preferably made of a material having a higher thermal conductivity than the leg part 20, for example. For the thermal diffusion part 30, for example, a heat-resistant metal such as tungsten, carbon, a mixture of carbon and a high thermal conductive material such as artificial diamond, or the like can be used.

  As a result, heat can be quickly transferred to the leg portion and the mounting portion at the center of the susceptor. Therefore, even if the mounting part is divided into a plurality of heat radiation parts, there is no temperature difference between the outside of the susceptor (the side close to the heating part H) and the center.

  As shown in FIG. 12, the heating part H for warming the susceptor device 1 (mounting part 10) is formed so as to surround the side of the thermal diffusion part 30, and heat is sufficiently diffused in the thermal diffusion part 30. The heat is transferred from the through holes 31 to the leg portions 20 connected to the heat radiation portions. Thereby, even if the mounting portion 10 is divided into a plurality of portions, the heat radiation portions on the inner side and the outer side can be heated almost simultaneously, and the temperature distribution becomes more uniform. If there is no heat radiating part and the heating part H surrounds the side of the mounting part 10, heat is not easily conducted to the heat radiating part on the inside and the temperature distribution tends to be non-uniform, but the above configuration causes such a problem. Absent.

--- Drive mechanism--
The drive mechanism Dr is a deformable mechanism that can extend and contract each leg 20 up and down. In the example shown in FIG. 3, the piezo actuator 41 deforms the susceptor holding thin plate portion 40, and the deformed susceptor holding thin plate portion 40 moves each of the leg portions 20 up and down.

  In addition to the circular metal plate shown in FIG. 13, the susceptor holding thin plate portion 40 is directed from the outer periphery of the circular metal plate to the center along the heat transfer portion HT in consideration of the arrangement of the legs 20 and the deformation of the wafer as shown in FIG. It is preferable to insert a notch notch, because it enables deformation in accordance with the shape of the wafer.

  The piezoelectric actuator 41 shown in FIG. 3 is feedback-controlled by the control unit Cont based on information on the “warp” of the wafer from the measurement unit 6 attached to the upper part of the wafer.

  The piezoelectric actuator is an example and is not limited, but an electric drive system such as another electromagnetic actuator may be used.

  Furthermore, the piezoelectric actuator 41 is not limited to the form in which one piezo actuator 41 is arranged at the center of the susceptor holding thin plate portion 40, and a plurality of piezoelectric actuators 41 may be used such as preparing one for each mounting portion 10 or each leg portion 20. By adjusting the height of each of the plurality of piezoelectric actuators 41 or for each group, it is possible to cope with more complicated wafer deformation. In this case, the susceptor holding thin plate portion 40 can be omitted. For example, as shown in FIG. 14, one leg 20 is provided for each heat radiation part of the mounting part 10 and one piezo actuator 41 is connected to each leg, and each piezo actuator 41 is fed back independently by the control part Cont. Except for being controlled, it can be configured in the same manner as in the above embodiment.

Susceptor device 1
2 Reactor 3 Flow Channel 5 Wafer 6 Measurement Unit 10 Mounting Part 10a, 10b, 10c, 10d Thermal Radiation Part 20 Leg Part 30 Thermal Diffusion Part 31 Through Hole 41 Piezo Actuator 40 Susceptor Holding Thin Plate Part 42 Support Part 43 Susceptor Rotating Mechanism Part 61 Laser light source 62 Detection unit Cont control unit H heating unit Dr drive mechanism Pt protrusion

Claims (8)

A susceptor device having a mounting area on which a growth substrate is placed,
A plurality of heat radiation portions arranged in each of the divided regions obtained by dividing the mounting region and each having a heat radiation surface facing the growth substrate and movable in the thickness direction of the growth substrate. A susceptor device having a mounting portion.   2. The heat radiation portion includes a heat diffusion portion having a leg portion extending in a thickness direction of the growth substrate that is separated from the growth substrate, and surrounding the leg portion with a space therebetween. A susceptor device according to claim 1.   The susceptor device according to claim 2, wherein the thermal diffusion part is formed of a material having a higher thermal conductivity than the leg part.   The susceptor device according to any one of claims 1 to 3, wherein at least three protrusions in contact with the growth substrate are provided in the plurality of thermal radiation portions.   The susceptor device according to any one of claims 1 to 4, wherein the mounting region is divided into concentric circles, sectors, or grids. The susceptor device according to any one of claims 2 to 5, wherein a growth substrate is placed in a reaction furnace,
A gas injection pipe for supplying a source gas onto the growth substrate;
A substrate warpage amount measuring device for detecting a warpage amount distribution on the surface of the growth substrate;
Vapor phase growth characterized by having a drive mechanism for driving the thermal radiation portion in the thickness direction of the growth substrate in accordance with a warp amount distribution signal on the surface of the growth substrate from the substrate warpage amount measuring device. apparatus.   The drive mechanism is composed of a susceptor holding thin plate portion connected to all or a plurality of lower portions of the leg portion, and a deformation mechanism capable of expanding and contracting in the thickness direction of the growth substrate connected to the lower portion of the susceptor holding thin plate portion. The vapor phase growth apparatus according to claim 6, wherein   The vapor phase growth apparatus according to claim 6, wherein the drive mechanism is configured by a deformation mechanism that can be expanded and contracted in a thickness direction of the growth substrate that is connected to a lower side of each of the leg portions.

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