JP2019527926A - 基層を熱処理する方法及び装置 - Google Patents
基層を熱処理する方法及び装置 Download PDFInfo
- Publication number
- JP2019527926A JP2019527926A JP2018566386A JP2018566386A JP2019527926A JP 2019527926 A JP2019527926 A JP 2019527926A JP 2018566386 A JP2018566386 A JP 2018566386A JP 2018566386 A JP2018566386 A JP 2018566386A JP 2019527926 A JP2019527926 A JP 2019527926A
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- JP
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- Prior art keywords
- time
- base layer
- gas discharge
- discharge lamp
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 2
- 239000010408 film Substances 0.000 claims 1
- 239000003973 paint Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 description 16
- 150000002367 halogens Chemical class 0.000 description 16
- 238000000137 annealing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
- H05B41/14—Circuit arrangements
- H05B41/30—Circuit arrangements in which the lamp is fed by pulses, e.g. flash lamp
- H05B41/32—Circuit arrangements in which the lamp is fed by pulses, e.g. flash lamp for single flash operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32045—Circuits specially adapted for controlling the glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/12—Selection of substances for gas fillings; Specified operating pressure or temperature
- H01J61/16—Selection of substances for gas fillings; Specified operating pressure or temperature having helium, argon, neon, krypton, or xenon as the principle constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/56—One or more circuit elements structurally associated with the lamp
Abstract
Description
110 気体放電ランプ
120 コンデンサ
130 チョークコイル
140 点火のための電流供給部
150 コンデンサの充電のための電流供給部
160 シマー動作のための電流供給部
170 電子スイッチ2
200 本発明による装置
280 継続動作のための一定の出力を有する電流供給部
290 電子スイッチ1
Claims (8)
- 少なくとも1つの気体放電ランプ(110)により基層を熱処理する方法において、
前記気体放電ランプが、20ミリ秒〜5秒の第1の時間にわたって一定の電気的な出力において動作され、前記第1の時間の最後に、前記気体放電ランプの平均的な電気的な出力が、50マイクロ秒〜20ミリ秒の第2の時間にわたって少なくとも1つのオーダーだけ高められることを特徴とする方法。 - 前記基層の前記熱処理が、20ミリ秒〜5秒の前記第1の時間へ制限されたままであることを特徴とする請求項1に記載の方法。
- 前記基層が、2〜200マイクロメートルの厚さを有するコーティングを有していることを特徴とする請求項1又は2に記載の方法。
- 前記コーティングが、少なくとも1つのゾルゲルフィルム、塗装、ナノ粒子で構成されていることを特徴とする請求項3に記載の方法。
- スタンバイモードにおけるシマー動作を備えた少なくとも1つの気体放電ランプ(110)を有する、基層を熱処理する装置において、
前記気体放電ランプが、50マイクロ秒を超える選択可能な時間にわたって、一定の出力の第1の電流供給部(280)に第1の電子スイッチ(290)を介して接続されることが可能であるとともに、電気的に充電される少なくとも1つのコンデンサ(120)に第2の電子スイッチ(170)を介して接続されることが可能であることを特徴とする装置。 - 前記第1の電流供給部(280)が、漂遊磁場変圧器及び整流器を含んでいることを特徴とする請求項5に記載の装置。
- 前記漂遊磁場変圧器の最大の電流の大きさを、機械的な調整器を介して手動で設定することが可能であることを特徴とする請求項6に記載の装置。
- 前記第1の電流供給部(280)が、少なくとも1つのアキュムレータを含んでいることを特徴とする請求項5に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016110867.7 | 2016-06-14 | ||
DE102016110867 | 2016-06-14 | ||
DE102016112836.8A DE102016112836A1 (de) | 2016-06-14 | 2016-07-13 | Verfahren und Vorrichtung zur thermischen Behandlung eines Substrats |
DE102016112836.8 | 2016-07-13 | ||
PCT/EP2017/064616 WO2017216262A1 (de) | 2016-06-14 | 2017-06-14 | Verfahren und vorrichtung zur thermischen behandlung eines substrats |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019527926A true JP2019527926A (ja) | 2019-10-03 |
JP7277144B2 JP7277144B2 (ja) | 2023-05-18 |
Family
ID=60420094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018566386A Active JP7277144B2 (ja) | 2016-06-14 | 2017-06-14 | 基層を熱処理する方法及び装置 |
Country Status (13)
Country | Link |
---|---|
US (1) | US11490473B2 (ja) |
EP (1) | EP3469621B1 (ja) |
JP (1) | JP7277144B2 (ja) |
KR (1) | KR102296883B1 (ja) |
CN (1) | CN109417014B (ja) |
DE (1) | DE102016112836A1 (ja) |
DK (1) | DK3469621T3 (ja) |
ES (1) | ES2929222T3 (ja) |
HU (1) | HUE060110T2 (ja) |
MY (1) | MY190353A (ja) |
PL (1) | PL3469621T3 (ja) |
PT (1) | PT3469621T (ja) |
WO (1) | WO2017216262A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164201A (ja) * | 2007-12-28 | 2009-07-23 | Ushio Inc | 基板加熱装置及び基板加熱方法 |
JP2010093282A (ja) * | 2000-12-04 | 2010-04-22 | Mattson Technology Canada Inc | 熱処理方法およびシステム |
JP2010114145A (ja) * | 2008-11-04 | 2010-05-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2010283163A (ja) * | 2009-06-04 | 2010-12-16 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2011014541A (ja) * | 2010-07-09 | 2011-01-20 | Mattson Technology Canada Inc | 高強度の電磁放射線発生装置及び発生方法 |
JP2011119562A (ja) * | 2009-12-07 | 2011-06-16 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US3130359A (en) * | 1960-09-01 | 1964-04-21 | Globe Union Inc | Battery charging circuit with saturable reactor control |
US4325008A (en) * | 1980-06-09 | 1982-04-13 | General Electric Company | Clamp assisted cycle control regulating system |
US6888319B2 (en) * | 2001-03-01 | 2005-05-03 | Palomar Medical Technologies, Inc. | Flashlamp drive circuit |
US7981212B2 (en) * | 2006-03-29 | 2011-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash lamp annealing device |
US8404160B2 (en) * | 2007-05-18 | 2013-03-26 | Applied Nanotech Holdings, Inc. | Metallic ink |
WO2010044904A1 (en) * | 2008-10-17 | 2010-04-22 | Ncc Nano, Llc | Method for reducing thin films on low temperature substrates |
US8559799B2 (en) * | 2008-11-04 | 2013-10-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and method for heating substrate by photo-irradiation |
US8552588B2 (en) * | 2009-11-05 | 2013-10-08 | Tai-Her Yang | Battery charging coaction and output system with current limit supply |
JP5604955B2 (ja) * | 2010-04-19 | 2014-10-15 | ウシオ電機株式会社 | 放電ランプ点灯装置 |
SG11201400107UA (en) * | 2011-08-16 | 2014-04-28 | Xenon Corp | Sintering process and apparatus |
WO2013058963A1 (en) * | 2011-10-20 | 2013-04-25 | Xenon Corporation | Circuit for flash lamp |
JP2017510087A (ja) * | 2013-12-20 | 2017-04-06 | ゼノン・コーポレイションXenon Corporation | 連続フラッシュランプシンタリング |
JP6560550B2 (ja) * | 2015-07-06 | 2019-08-14 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
-
2016
- 2016-07-13 DE DE102016112836.8A patent/DE102016112836A1/de not_active Withdrawn
-
2017
- 2017-06-14 WO PCT/EP2017/064616 patent/WO2017216262A1/de unknown
- 2017-06-14 US US16/309,639 patent/US11490473B2/en active Active
- 2017-06-14 ES ES17730160T patent/ES2929222T3/es active Active
- 2017-06-14 HU HUE17730160A patent/HUE060110T2/hu unknown
- 2017-06-14 EP EP17730160.3A patent/EP3469621B1/de active Active
- 2017-06-14 JP JP2018566386A patent/JP7277144B2/ja active Active
- 2017-06-14 PT PT177301603T patent/PT3469621T/pt unknown
- 2017-06-14 CN CN201780037086.7A patent/CN109417014B/zh active Active
- 2017-06-14 PL PL17730160.3T patent/PL3469621T3/pl unknown
- 2017-06-14 KR KR1020197001302A patent/KR102296883B1/ko active IP Right Grant
- 2017-06-14 MY MYPI2018002531A patent/MY190353A/en unknown
- 2017-06-14 DK DK17730160.3T patent/DK3469621T3/da active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010093282A (ja) * | 2000-12-04 | 2010-04-22 | Mattson Technology Canada Inc | 熱処理方法およびシステム |
JP2009164201A (ja) * | 2007-12-28 | 2009-07-23 | Ushio Inc | 基板加熱装置及び基板加熱方法 |
JP2010114145A (ja) * | 2008-11-04 | 2010-05-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2010283163A (ja) * | 2009-06-04 | 2010-12-16 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2011119562A (ja) * | 2009-12-07 | 2011-06-16 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2011014541A (ja) * | 2010-07-09 | 2011-01-20 | Mattson Technology Canada Inc | 高強度の電磁放射線発生装置及び発生方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3469621A1 (de) | 2019-04-17 |
CN109417014A (zh) | 2019-03-01 |
US20190208609A1 (en) | 2019-07-04 |
WO2017216262A1 (de) | 2017-12-21 |
DE102016112836A1 (de) | 2017-12-14 |
HUE060110T2 (hu) | 2023-01-28 |
JP7277144B2 (ja) | 2023-05-18 |
ES2929222T3 (es) | 2022-11-28 |
KR102296883B1 (ko) | 2021-08-31 |
MY190353A (en) | 2022-04-15 |
US11490473B2 (en) | 2022-11-01 |
EP3469621B1 (de) | 2022-08-17 |
DK3469621T3 (da) | 2022-11-14 |
PL3469621T3 (pl) | 2023-04-24 |
KR20190017988A (ko) | 2019-02-20 |
PT3469621T (pt) | 2022-11-03 |
CN109417014B (zh) | 2021-06-29 |
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