JP2019527480A - 紫外線発光ダイオード - Google Patents
紫外線発光ダイオード Download PDFInfo
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- JP2019527480A JP2019527480A JP2019501695A JP2019501695A JP2019527480A JP 2019527480 A JP2019527480 A JP 2019527480A JP 2019501695 A JP2019501695 A JP 2019501695A JP 2019501695 A JP2019501695 A JP 2019501695A JP 2019527480 A JP2019527480 A JP 2019527480A
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- emitting diode
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- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 246
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
Description
Claims (21)
- 基板と、
前記基板上に位置するn型半導体層と、
前記n型半導体層上に配置され、活性層及びp型半導体層を含むメサと、
前記n型半導体層にコンタクトするnオーミックコンタクト層と、
前記p型半導体層にコンタクトするpオーミックコンタクト層と、
前記nオーミックコンタクト層に電気的に接続されたnバンプと、
前記pオーミックコンタクト層に電気的に接続されたpバンプと、を含み、
前記メサは、メインブランチと、前記メインブランチから延長される複数のサブブランチを含み、
前記nオーミックコンタクト層は、前記メサを取り囲み、また、前記各サブブランチ間の領域に介在し、
前記nバンプ及びpバンプのそれぞれは、前記メサの上部及び側面を覆う紫外線発光ダイオード。 - 前記各サブブランチ間に露出したn型半導体層の最小幅は、前記各サブブランチの最小幅以上である、請求項1に記載の紫外線発光ダイオード。
- 前記メインブランチの最小幅は、前記各サブブランチの最小幅より大きい、請求項2に記載の紫外線発光ダイオード。
- 前記メインブランチは、前記基板の一側の縁部に沿って延長される第1メインブランチ、及び前記基板の一側の縁部に隣り合う他側の縁部に沿って延長される第2メインブランチを含み、
前記各サブブランチは、前記第1メインブランチから延長される各サブブランチと、前記第2メインブランチから延長される各サブブランチと、を含む、請求項1に記載の紫外線発光ダイオード。 - 前記各サブブランチは互いに平行である、請求項4に記載の紫外線発光ダイオード。
- 前記各サブブランチは、前記基板の対角線に対して平行である、請求項5に記載の紫外線発光ダイオード。
- 前記各サブブランチは、互いに異なる長さを有する、請求項6に記載の紫外線発光ダイオード。
- 前記基板は、四辺の縁部を有する四角形状であって、それぞれの縁部から前記メサまでの最短距離は、それぞれの縁部から前記基板の中心までの最短距離の1/2より小さい、請求項1に記載の紫外線発光ダイオード。
- 前記nオーミックコンタクト層を覆うnパッド金属層、及び前記pオーミックコンタクト層を覆うpパッド金属層を更に含み、
前記nバンプ及びpバンプは、それぞれ前記nパッド金属層及び前記pパッド金属層に接続する、請求項1に記載の紫外線発光ダイオード。 - 前記nオーミックコンタクト層は、Cr、Ti、Al及びAuを含む金属アロイ層であって、
前記nパッド金属層はTi層/Au層/Ti層を含み、
前記nパッド金属層は前記nオーミックコンタクト層に接する、請求項9に記載の紫外線発光ダイオード。 - 前記nパッド金属層及び前記pパッド金属層と前記nバンプ及びpバンプとの間に介在し、前記nパッド金属層及びpパッド金属層を露出させる各開口部を有する絶縁層を更に含む、請求項9に記載の紫外線発光ダイオード。
- 前記各開口部は、それぞれ前記nバンプ及びpバンプによって遮蔽された、請求項11に記載の紫外線発光ダイオード。
- 前記nオーミックコンタクト層と前記メサとの間の間隔は一定である、請求項1に記載の紫外線発光ダイオード。
- 前記nバンプ及びpバンプは互いに平行に配置された、請求項1に記載の紫外線発光ダイオード。
- 前記メサは、側面に突出部を含む、請求項1に記載の紫外線発光ダイオード。
- 前記nオーミックコンタクト層は、前記メサの側面に沿って前記メサから一定の間隔だけ離隔した、請求項15に記載の紫外線発光ダイオード。
- 基板と、
前記基板上に位置するn型半導体層と、
前記n型半導体層上に配置され、活性層及びp型半導体層を含むメサと、
前記n型半導体層にコンタクトするnオーミックコンタクト層と、
前記p型半導体層にコンタクトするpオーミックコンタクト層と、
前記nオーミックコンタクト層に電気的に接続されたnバンプと、
前記pオーミックコンタクト層に電気的に接続されたpバンプと、を含み、
前記メサは、複数のブランチを含み、
前記nオーミックコンタクト層は、前記メサを取り囲み、また、前記各ブランチ間の領域に介在し、
前記nバンプ及びpバンプは、それぞれ前記メサの上部及び側面を覆い、
前記pバンプは、前記各ブランチのうち少なくとも二つのブランチを覆う紫外線発光ダイオード。 - 前記各ブランチは、メインブランチと、前記メインブランチから延長される複数のサブブランチと、を含む、請求項17に記載の紫外線発光ダイオード。
- 前記メインブランチは、前記基板の一側の縁部に沿って延長される第1メインブランチ、及び前記第1メインブランチと直交する第2メインブランチを含む、請求項18に記載の紫外線発光ダイオード。
- 前記pバンプは、前記第1メインブランチを完全に覆い、前記第2メインブランチを部分的に覆う、請求項19に記載の紫外線発光ダイオード。
- 前記各サブブランチのうちの一部は、前記pバンプから離隔し、前記nバンプと部分的に重畳する、請求項18に記載の紫外線発光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0090201 | 2016-07-15 | ||
KR1020160090201A KR102550005B1 (ko) | 2016-07-15 | 2016-07-15 | 자외선 발광 다이오드 |
PCT/KR2017/007286 WO2018012807A1 (ko) | 2016-07-15 | 2017-07-07 | 자외선 발광 다이오드 |
Publications (2)
Publication Number | Publication Date |
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JP2019527480A true JP2019527480A (ja) | 2019-09-26 |
JP6675516B2 JP6675516B2 (ja) | 2020-04-01 |
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Application Number | Title | Priority Date | Filing Date |
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JP2019501695A Active JP6675516B2 (ja) | 2016-07-15 | 2017-07-07 | 紫外線発光ダイオード |
Country Status (6)
Country | Link |
---|---|
US (3) | US10868215B2 (ja) |
JP (1) | JP6675516B2 (ja) |
KR (1) | KR102550005B1 (ja) |
CN (6) | CN114464716A (ja) |
DE (1) | DE112017003572T5 (ja) |
WO (1) | WO2018012807A1 (ja) |
Cited By (1)
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JP2022182964A (ja) * | 2021-05-26 | 2022-12-08 | 日亜化学工業株式会社 | 発光素子 |
Families Citing this family (6)
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US10871295B2 (en) * | 2017-08-30 | 2020-12-22 | Seoul Viosys Co., Ltd. | Air cleaning module |
KR20200088042A (ko) * | 2019-01-14 | 2020-07-22 | 서울바이오시스 주식회사 | 심자외선 발광 다이오드 |
CN111129249B (zh) * | 2019-12-31 | 2021-08-10 | 宁波安芯美半导体有限公司 | 一种深紫外线发光二极管及其制备方法 |
EP4184597A1 (en) * | 2020-07-17 | 2023-05-24 | Seoul Viosys Co., Ltd. | Deep ultraviolet light-emitting diode |
CN113851567B (zh) * | 2021-11-26 | 2022-04-12 | 泉州三安半导体科技有限公司 | 一种发光二极管芯片、发光装置 |
CN115394762A (zh) * | 2022-05-17 | 2022-11-25 | 诺视科技(苏州)有限公司 | 一种具有透明衬底的像素级分立器件及其制作方法 |
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2016
- 2016-07-15 KR KR1020160090201A patent/KR102550005B1/ko active IP Right Grant
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2017
- 2017-07-07 CN CN202210171852.1A patent/CN114464716A/zh active Pending
- 2017-07-07 DE DE112017003572.4T patent/DE112017003572T5/de active Pending
- 2017-07-07 WO PCT/KR2017/007286 patent/WO2018012807A1/ko active Application Filing
- 2017-07-07 CN CN202210615085.9A patent/CN115117215A/zh active Pending
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JP2022182964A (ja) * | 2021-05-26 | 2022-12-08 | 日亜化学工業株式会社 | 発光素子 |
JP7329742B2 (ja) | 2021-05-26 | 2023-08-21 | 日亜化学工業株式会社 | 発光素子 |
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CN110993763B (zh) | 2023-08-29 |
US11749780B2 (en) | 2023-09-05 |
WO2018012807A1 (ko) | 2018-01-18 |
US20210074887A1 (en) | 2021-03-11 |
KR102550005B1 (ko) | 2023-07-03 |
JP6675516B2 (ja) | 2020-04-01 |
CN114464716A (zh) | 2022-05-10 |
CN115117215A (zh) | 2022-09-27 |
CN115117214A (zh) | 2022-09-27 |
CN115000267A (zh) | 2022-09-02 |
KR20180008198A (ko) | 2018-01-24 |
CN109478581B (zh) | 2022-06-17 |
US10868215B2 (en) | 2020-12-15 |
CN110993763A (zh) | 2020-04-10 |
US20230395752A1 (en) | 2023-12-07 |
CN109478581A (zh) | 2019-03-15 |
US20190148596A1 (en) | 2019-05-16 |
DE112017003572T5 (de) | 2019-05-09 |
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