JP2019527477A5 - - Google Patents

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Publication number
JP2019527477A5
JP2019527477A5 JP2019501489A JP2019501489A JP2019527477A5 JP 2019527477 A5 JP2019527477 A5 JP 2019527477A5 JP 2019501489 A JP2019501489 A JP 2019501489A JP 2019501489 A JP2019501489 A JP 2019501489A JP 2019527477 A5 JP2019527477 A5 JP 2019527477A5
Authority
JP
Japan
Prior art keywords
substrate
donor
backing
remaining
donor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019501489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019527477A (ja
Filing date
Publication date
Priority claimed from US15/643,370 external-priority patent/US20180019169A1/en
Priority claimed from US15/643,384 external-priority patent/US20180033609A1/en
Application filed filed Critical
Priority claimed from PCT/IB2017/054209 external-priority patent/WO2018011731A1/en
Publication of JP2019527477A publication Critical patent/JP2019527477A/ja
Publication of JP2019527477A5 publication Critical patent/JP2019527477A5/ja
Pending legal-status Critical Current

Links

JP2019501489A 2016-07-12 2017-07-12 ドナー基材を再生するための方法 Pending JP2019527477A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662361468P 2016-07-12 2016-07-12
US62/361,468 2016-07-12
US201662367911P 2016-07-28 2016-07-28
US62/367,911 2016-07-28
US15/643,370 2017-07-06
US15/643,370 US20180019169A1 (en) 2016-07-12 2017-07-06 Backing substrate stabilizing donor substrate for implant or reclamation
US15/643,384 2017-07-06
US15/643,384 US20180033609A1 (en) 2016-07-28 2017-07-06 Removal of non-cleaved/non-transferred material from donor substrate
PCT/IB2017/054209 WO2018011731A1 (en) 2016-07-12 2017-07-12 Method of a donor substrate undergoing reclamation

Publications (2)

Publication Number Publication Date
JP2019527477A JP2019527477A (ja) 2019-09-26
JP2019527477A5 true JP2019527477A5 (https=) 2020-08-20

Family

ID=65658530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019501489A Pending JP2019527477A (ja) 2016-07-12 2017-07-12 ドナー基材を再生するための方法

Country Status (4)

Country Link
EP (1) EP3485505A1 (https=)
JP (1) JP2019527477A (https=)
KR (1) KR20190027821A (https=)
CN (1) CN109478493A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190163B (zh) 2019-05-24 2020-04-28 康佳集团股份有限公司 图形化衬底、外延片、制作方法、存储介质及led芯片
CN115803851B (zh) * 2021-01-21 2023-06-30 信越工程株式会社 工件分离装置及工件分离方法
CN116868309A (zh) * 2021-02-04 2023-10-10 三菱电机株式会社 半导体基板的制造方法及半导体装置的制造方法
FR3120159B1 (fr) * 2021-02-23 2023-06-23 Soitec Silicon On Insulator Procédé de préparation du résidu d’un substrat donneur ayant subi un prélèvement d’une couche par délamination
JP7484773B2 (ja) 2021-03-04 2024-05-16 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
EP1777735A3 (fr) * 2005-10-18 2009-08-19 S.O.I.Tec Silicon on Insulator Technologies Procédé de recyclage d'une plaquette donneuse épitaxiée
JP4519199B2 (ja) * 2007-09-03 2010-08-04 パナソニック株式会社 ウエハ再生方法およびウエハ再生装置
SG159484A1 (en) * 2008-09-05 2010-03-30 Semiconductor Energy Lab Method of manufacturing soi substrate
US8679942B2 (en) * 2008-11-26 2014-03-25 Soitec Strain engineered composite semiconductor substrates and methods of forming same
JP2014157979A (ja) * 2013-02-18 2014-08-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
TW201612957A (en) * 2014-07-11 2016-04-01 Gtat Corp Support substrate for ion beam exfoliation of a crystalline lamina

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