JP2019526520A - Method for forming nanoprotrusion surface and base material having nanoprotrusion surface formed by the method - Google Patents
Method for forming nanoprotrusion surface and base material having nanoprotrusion surface formed by the method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000000463 material Substances 0.000 title claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 129
- 238000001039 wet etching Methods 0.000 claims abstract description 55
- 239000011521 glass Substances 0.000 claims description 88
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 74
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 66
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 48
- 229910017604 nitric acid Inorganic materials 0.000 claims description 48
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 46
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 43
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 37
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 23
- 229920006254 polymer film Polymers 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 230000002265 prevention Effects 0.000 claims description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910017855 NH 4 F Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
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- 238000010306 acid treatment Methods 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 239000012788 optical film Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- 238000004381 surface treatment Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Surface Treatment Of Glass (AREA)
- Weting (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
ナノ突起の形成方法及び該方法によって形成されたナノ突起表面を有する母材に関するものであり、ナノマスク（ｍａｓｋ）を用いることなく、酸溶液によるウェットエッチング工程を用いて、数ｎｍ〜数十ｎｍの幅を有するナノ突起を有する反射防止層、及び／又は数十ｎｍ〜数μｍの幅を有する突起を有する防眩層を形成することを特徴とする。The present invention relates to a method for forming nanoprotrusions and a base material having a nanoprotrusion surface formed by the method, and using a wet etching process with an acid solution without using a nanomask, the thickness is several nm to several tens of nm. An antireflection layer having nanoprojections having a width and / or an antiglare layer having projections having a width of several tens of nanometers to several μm are formed.
Description
母材（ガラス又はガラス特性を有するポリマーフィルム基板）にナノ突起を形成する方法に係り、選択的エッチング抵抗手段としてのマスク（ｍａｓｋ）を用いることなく、ウェットエッチング工程によって母材の表面に数ｎｍ〜数十ｎｍ又は数十ｎｍ〜数μｍの幅を有する突起を形成するマスクレスウェットナノパターニング方法及び該方法によって形成されたナノ突起表面を有する母材に関する。 The present invention relates to a method of forming nano-projections on a base material (glass or a polymer film substrate having glass characteristics), and a few nm on the surface of the base material by a wet etching process without using a mask as a selective etching resistance means. The present invention relates to a maskless wet nano-patterning method for forming protrusions having a width of ˜tens of nanometers or tens of nanometers to several μm and a base material having a nanoprotrusion surface formed by the method.
半導体工程におけるエッチング工程は、ウェットエッチングとドライエッチングとに大別できる。ウェットエッチングは、一般に、腐食溶解させる性質を有するエッチング溶液と、エッチングの対象となる母材との化学反応によって行われる。ウェットエッチングは、垂直、水平方向へのエッチング速度が同じである等方性エッチングである。ドライエッチングは、ガスプラズマや活性化されたガスによる反応を用いたエッチング工程である。ドライエッチングは、垂直、水平方向へのエッチング速度が異なる異方性エッチングである。 The etching process in the semiconductor process can be roughly divided into wet etching and dry etching. In general, wet etching is performed by a chemical reaction between an etching solution having a property of being eroded and dissolved and a base material to be etched. The wet etching is an isotropic etching in which the etching rates in the vertical and horizontal directions are the same. Dry etching is an etching process using a reaction with gas plasma or activated gas. Dry etching is anisotropic etching with different etching rates in the vertical and horizontal directions.
従来の表面処理に際して、数〜数十ｎｍの幅を有するパターンを形成するためには、上述したドライエッチングを用いることを余儀なくされていた。しかしながら、ドライエッチングは、ウェットエッチングに比べて高コストであり、工程管理が行い難く、量産が容易でもない。なお、ドライエッチングは、工程の特性からみて、曲線ガラス及び大面積ガラスに適用し難い。 In the conventional surface treatment, in order to form a pattern having a width of several to several tens of nanometers, it is necessary to use the above-described dry etching. However, dry etching is more expensive than wet etching, process management is difficult to perform, and mass production is not easy. Note that dry etching is difficult to apply to curved glass and large area glass in view of process characteristics.
従来のウェットエッチングは、ドライエッチングに比べて工程管理が容易であり、量産に有利であるが、ウェットエッチングによって形成されたパターンは、平均３μｍ以上の幅を有する。 Conventional wet etching has easier process control than dry etching and is advantageous for mass production. However, the pattern formed by wet etching has an average width of 3 μm or more.
近年、スマートフォンなどのモバイル機器をはじめとする各種のディスプレイ分野において、光学ガラス及び光学フィルムの反射防止処理の重要性が高まりつつある中で、反射防止を実現するためのナノパターニング技術が注目を集めているが、技術が面倒な高コストのナノマスクを必要とし、且つ、曲面や大面積の処理が困難であることから、未だ実用レベルに至っていない。 In recent years, in various display fields including mobile devices such as smartphones, the importance of antireflection treatment for optical glass and optical film has been increasing, and nano patterning technology for realizing antireflection has attracted attention. However, the technology requires a troublesome and expensive nanomask, and it is difficult to process a curved surface or a large area.
これらの問題を解消するための方法として、マスクが不要であり、ドライエッチングではないウェットエッチング工程を用いて、数ｎｍ〜数μｍの幅を有するパターンを実現することのできる技術が求められてきている。 As a method for solving these problems, there has been a demand for a technique that can realize a pattern having a width of several nanometers to several micrometers using a wet etching process that is not dry etching and does not require a mask. Yes.
提案された発明が解決しようとする一つの課題は、ウェットエッチング工程を用いて、数ｎｍ〜数十ｎｍ又は数十ｎｍ〜数μｍの幅を有するナノ突起を形成することである。 One problem to be solved by the proposed invention is to form nano-projections having a width of several nanometers to several tens of nanometers or several tens of nanometers to several micrometers using a wet etching process.
提案された発明が解決しようとする他の課題は、ウェットエッチング工程を用いて、防眩を行うガラス又はガラス特性を有するポリマーフィルムを生産することである。 Another problem to be solved by the proposed invention is to produce an antiglare glass or a polymer film having glass properties using a wet etching process.
提案された発明が解決しようとする更に他の課題は、ウェットエッチング工程を用いて、反射を防止するガラス又はガラス特性を有するポリマーフィルムを生産することである。 Yet another problem that the proposed invention seeks to solve is to use a wet etch process to produce glass that prevents reflections or a polymer film with glass properties.
提案された発明が解決しようとする更に他の課題は、ウェットエッチング工程を用いて、防眩及び反射防止を同時に行うガラス又はガラス特性を有するポリマーフィルムを生産することである。 Yet another problem to be solved by the proposed invention is to produce glass or a polymer film having glass properties that simultaneously performs anti-glare and anti-reflection using a wet etching process.
本発明に係る突起の形成方法は、ウェットエッチングでガラス又はガラス特性を有するポリマーフィルム基板の上に突起を形成するステップを含む。 The method for forming protrusions according to the present invention includes a step of forming protrusions on glass or a polymer film substrate having glass properties by wet etching.
一態様において、前記突起を形成するステップは、酸溶液を用いたウェットエッチングで数十ｎｍ〜数μｍの幅を有する突起を有する防眩層を形成するステップを含む。 In one aspect, the step of forming the protrusion includes a step of forming an antiglare layer having a protrusion having a width of several tens of nanometers to several micrometers by wet etching using an acid solution.
このとき、前記酸溶液は、フッ素系の酸及び硝酸を含むことを特徴とする。 At this time, the acid solution includes a fluorine-based acid and nitric acid.
また、前記酸溶液は、フッ化水素及び硝酸を含むが、フッ化アンモニウム、リン酸、塩酸のうちの少なくとも一種を更に含むことを特徴とする。 The acid solution contains hydrogen fluoride and nitric acid, and further contains at least one of ammonium fluoride, phosphoric acid, and hydrochloric acid.
前記酸溶液中のフッ化水素の含量は、１０重量％以下であることを特徴とする。 The content of hydrogen fluoride in the acid solution is 10% by weight or less.
前記酸溶液中の硝酸の含量は、１０重量％以上２５重量％以下であることを特徴とする。 The content of nitric acid in the acid solution is 10 wt% or more and 25 wt% or less.
前記酸溶液にフッ化アンモニウムが含まれる場合、その含量は、５重量％以下であることを特徴とする。 When the acid solution contains ammonium fluoride, the content thereof is 5% by weight or less.
前記酸溶液にリン酸が含まれる場合、その含量は、５重量％以下であることを特徴とする。 When phosphoric acid is contained in the acid solution, the content thereof is 5% by weight or less.
前記酸溶液に塩酸が含まれる場合、その含量は、１０重量％以下であることを特徴とする。 When hydrochloric acid is included in the acid solution, the content thereof is 10% by weight or less.
更に、前記酸溶液は、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸及び水を含むが、前記酸溶液１００重量％への各成分の含量は、前記フッ化水素は１０重量％以下、前記フッ化アンモニウムは５重量％以下、前記硝酸は１０重量％以上２５重量％以下、前記リン酸は５重量％以下、前記塩酸は１０重量％以下であり、且つ、残余が前記水であることを特徴とする。 Furthermore, the acid solution contains hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, hydrochloric acid, and water. The content of each component in 100% by weight of the acid solution is 10% by weight or less of the hydrogen fluoride. The ammonium fluoride is 5% by weight or less, the nitric acid is 10% by weight to 25% by weight, the phosphoric acid is 5% by weight or less, the hydrochloric acid is 10% by weight or less, and the balance is the water. It is characterized by that.
他の態様において、前記突起を形成するステップは、酸溶液を用いたウェットエッチングで数ｎｍ〜数十ｎｍの幅を有する突起を有する反射防止層を形成するステップを含む。
このとき、前記酸溶液は、フッ素系の酸を含むことを特徴とする。
In another aspect, the step of forming the protrusion includes a step of forming an antireflection layer having a protrusion having a width of several nanometers to several tens of nanometers by wet etching using an acid solution.
At this time, the acid solution contains a fluorine-based acid.
更にまた、前記酸溶液は、フッ化水素を含むが、フッ化アンモニウム、リン酸、硝酸、塩酸のうちの少なくとも一種を更に含むことを特徴とする。 Furthermore, the acid solution contains hydrogen fluoride, but further contains at least one of ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid.
前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であることを特徴とする。 The content of the hydrogen fluoride is more than 0% by weight and 10% by weight or less with respect to 100% by weight of the acid solution.
前記酸溶液にフッ化アンモニウムが含まれる場合、その含量は、５重量％以下であることを特徴とする。 When the acid solution contains ammonium fluoride, the content thereof is 5% by weight or less.
前記酸溶液に硝酸が含まれる場合、その含量は、５重量％以下であることを特徴とする。 When nitric acid is contained in the acid solution, the content thereof is 5% by weight or less.
前記酸溶液にリン酸が含まれる場合、その含量は、５重量％以下であることを特徴とする。 When phosphoric acid is contained in the acid solution, the content thereof is 5% by weight or less.
前記酸溶液に塩酸が含まれる場合、その含量は、１０重量％以上４０重量％以下であることを特徴とする。 When hydrochloric acid is contained in the acid solution, the content is 10 wt% or more and 40 wt% or less.
更にまた、前記酸溶液は、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸及び水を含むが、前記酸溶液１００重量％への各成分の含量は、前記フッ化水素は１０重量％以下、前記フッ化アンモニウムは５重量％以下、前記硝酸は５重量％以下、前記リン酸は５重量％以下、前記塩酸は１０重量％以上４０重量％以下であり、且つ、残余が水であることを特徴とする。 Furthermore, the acid solution contains hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, hydrochloric acid and water. The content of each component in 100% by weight of the acid solution is 10% by weight of the hydrogen fluoride. Hereinafter, the ammonium fluoride is 5 wt% or less, the nitric acid is 5 wt% or less, the phosphoric acid is 5 wt% or less, the hydrochloric acid is 10 wt% or more and 40 wt% or less, and the balance is water. It is characterized by that.
更に他の態様において、前記突起を形成するステップは、酸溶液を用いた１次ウェットエッチングで数十ｎｍ〜数μｍの幅を有する突起を有する防眩層を形成するステップと、酸溶液を用いた２次ウェットエッチングで前記防眩層の上に数ｎｍ〜数十ｎｍの幅を有する突起を有する反射防止層を形成するステップと、を含む。 In still another aspect, the step of forming the protrusion includes a step of forming an antiglare layer having a protrusion having a width of several tens of nm to several μm by primary wet etching using an acid solution, and an acid solution. Forming an antireflection layer having protrusions having a width of several nanometers to several tens of nanometers on the antiglare layer by secondary wet etching.
一方で、前記方法によって形成された本発明に係るナノ突起表面を有する母材は、表面に複数の突起が形成された母材であって、前記突起がウェットエッチングによって形成され、前記ウェットエッチングは、エッチングの前にマスクなどの選択的エッチング抵抗手段の形成プロセスなしに行われ、前記マスクなどの選択的エッチング抵抗手段を形成しないことによって、前記突起の形成された状態が、突起相互間の位置及び突起の大きさや形状においていかなる規則性も有さないことを特徴とする。 Meanwhile, a base material having a nanoprotrusion surface according to the present invention formed by the above method is a base material having a plurality of protrusions formed on the surface, and the protrusion is formed by wet etching. The etching is performed without a process of forming selective etching resistance means such as a mask before etching, and the selective etching resistance means such as the mask is not formed, so that the state where the protrusions are formed is positioned between the protrusions. And no regularity in the size and shape of the protrusions.
提案された発明は、ウェットエッチング工程を用いて、数ｎｍ〜数十ｎｍ又は数十ｎｍ〜数μｍの幅を有するナノ突起を形成することができる。 The proposed invention can form nano protrusions having a width of several nanometers to several tens of nanometers or several tens of nanometers to several micrometers using a wet etching process.
提案された発明は、ウェットエッチング工程を用いて、防眩を行うガラス又はガラス特性を有するポリマーフィルムを生産することができる。 The proposed invention can produce an antiglare glass or a polymer film having glass properties using a wet etching process.
提案された発明は、ウェットエッチング工程を用いて、反射を防止するガラス又はガラス特性を有するポリマーフィルムを生産することができる。 The proposed invention can use a wet etching process to produce glass that prevents reflection or a polymer film with glass properties.
提案された発明は、ウェットエッチング工程を用いて、防眩及び反射防止を同時に行うガラス又はガラス特性を有するポリマーフィルムを生産することができる。 The proposed invention can produce glass or a polymer film having glass properties that simultaneously perform anti-glare and anti-reflection using a wet etching process.
上述した、且つ、更なる態様は、添付図面を参照して説明する実施の形態によって具体化される。各実施の形態の構成要素は、別の断りのない限り、且つ、相互間に矛盾がない限り、実施の形態内において種々の組み合わせが可能であるものと理解される。ひいては、提案された発明は、多種多様な異なる形態に実現可能であり、ここで説明する実施の形態に何等限定されない。 The above and further aspects are embodied by the embodiments described with reference to the accompanying drawings. It is understood that various combinations can be made in the embodiments unless otherwise specified and there is no contradiction between the components in the embodiments. As a result, the proposed invention can be implemented in a wide variety of different forms, and is not limited to the embodiments described herein.
図中、提案された発明を明確に説明するために、説明とは無関係な部分は省略し、明細書の全体にわたって、類似の部分に対しては、類似の図面符号を付した。また、ある部分がある構成要素を「備える」としたとき、これは、特に断りのない限り、他の構成要素を除外するものではなく、他の構成要素を更に備え得るということを意味する。例えば、以下の説明においては、ガラス基板を対象としているが、ガラス特性を有するポリマーフィルムを含むということは、上述した通りである。 In the drawings, in order to clearly describe the proposed invention, parts not related to the description are omitted, and like parts are denoted by like reference numerals throughout the specification. Further, when “providing” a component having a certain part, this means that it does not exclude other components unless otherwise specified, and may further include other components. For example, in the following description, a glass substrate is targeted, but a polymer film having glass characteristics is included as described above.
図１は、本発明の一実施の形態に係る突起の形成方法の全体的な流れを示す。
一実施の形態において、突起の形成方法は、ガラス基板を洗浄するステップ（Ｓ６１０）と、ウェットエッチングを用いて、ガラス基板の上に突起を形成するステップ（Ｓ６２０）及びガラス基板を中和するステップ（Ｓ６３０）を含む。
FIG. 1 shows the overall flow of a method for forming protrusions according to an embodiment of the present invention.
In one embodiment, the method for forming protrusions includes a step of cleaning a glass substrate (S610), a step of forming protrusions on the glass substrate using wet etching (S620), and a step of neutralizing the glass substrate. (S630).
一実施の形態において、ガラス基板を洗浄するステップ（Ｓ６１０）は、ガラス基板に存在する有機物を除去して、後続工程であるウェットエッチングを用いて、ガラス基板の上に突起を形成するステップ（Ｓ６２０）において、酸溶液による酸処理が基板の全体にわたって均一に行われるようにする。ガラス基板の洗浄には、ＩＰＡ（Ｉｓｏｐｒｏｐｙｌ Ａｌｃｏｈｏｌ）又はエタノールを用いる。ＩＰＡ（Ｉｓｏｐｒｏｐｙｌ Ａｌｃｏｈｏｌ）又はエタノールでガラス基板を洗浄した後には、水で洗浄する。洗浄方式としては、超音波を用いたり、ブラッシュを用いたりして、ガラス基板を洗浄する方式が採用可能である。 In one embodiment, the step (S610) of cleaning the glass substrate removes organic substances present on the glass substrate, and forms a protrusion on the glass substrate using wet etching as a subsequent process (S620). ), The acid treatment with the acid solution is performed uniformly over the entire substrate. For the cleaning of the glass substrate, IPA (Isopropyl Alcohol) or ethanol is used. After the glass substrate is washed with IPA (Isopropyl Alcohol) or ethanol, it is washed with water. As a cleaning method, a method of cleaning the glass substrate by using ultrasonic waves or brushing can be employed.
一実施の形態に係るウェットエッチングを用いて、ガラス基板の上に突起を形成するステップ（Ｓ６２０）は、酸溶液中にガラス基板を浸漬するディッピング（ｄｉｐｐｉｎｇ）又はガラス基板に酸溶液を噴射するスプレイ（ｓｐｒａｙ）方式などによって行われる。突起を形成するステップ（Ｓ６２０）においては、マスクなしに酸溶液によるウェットエッチングを用いて、ガラス又はガラス特性を有するポリマーフィルム基板の上にナノ突起を形成する。ウェットエッチングを用いて、ガラス基板の上に突起を形成するステップ（Ｓ６２０）についての詳細な説明は、後述する。 The step (S620) of forming protrusions on the glass substrate using wet etching according to one embodiment includes dipping in which the glass substrate is immersed in the acid solution or spraying the acid solution onto the glass substrate. (Spray) method or the like. In the step of forming protrusions (S620), nano protrusions are formed on glass or a polymer film substrate having glass properties using wet etching with an acid solution without a mask. A detailed description of the step (S620) of forming protrusions on the glass substrate using wet etching will be described later.
一実施の形態において、ガラス基板を中和するステップ（Ｓ６３０）においては、ウェットエッチングを用いて、ガラス基板の上に突起を形成するステップ（Ｓ６２０）を経た、ｐｈが低くなったガラス基板の表面のｐｈを中性に維持する。例えば、水が入れられた水槽にウェットエッチングを用いて、ガラス基板の上に突起を形成するステップ（Ｓ６２０）を経た、ｐｈが低くなったガラス基板を浸漬して酸を中和する。 In one embodiment, in the step of neutralizing the glass substrate (S630), the surface of the glass substrate having a low ph after the step (S620) of forming protrusions on the glass substrate using wet etching. The ph is kept neutral. For example, wet etching is performed in a water tank containing water, and the glass substrate having a low ph after the step of forming protrusions on the glass substrate (S620) is immersed to neutralize the acid.
図２は、一実施の形態に係る防眩層が形成されたガラス基板の断面図を示す。 FIG. 2 shows a cross-sectional view of a glass substrate on which an antiglare layer according to one embodiment is formed.
一実施の形態において、前記突起を形成するステップは、酸溶液によるウェットエッチングを用いて、数十ｎｍ〜数μｍの幅ｗ１を有する突起を有する防眩層を形成するステップを含む。突起は、図２に示すように、凹面及び凸面を有する。上述した幅ｗ１は、凸面の幅である。酸溶液によるウェットエッチングによって、数十ｎｍ〜数μｍの幅ｗ１を有する突起は、数十ｎｍ〜数μｍの高さｈ１を有する。ガラス基板の表面に数十ｎｍ〜数μｍの幅ｗ１を有する突起があれば、ガラス基板に照射された光は数十ｎｍ〜数μｍの幅ｗ１を有する突起によって散乱され、これにより、ガラス基板の反射率は低くなるので、眩しさが低減される。 In one embodiment, the step of forming the protrusion includes a step of forming an antiglare layer having a protrusion having a width w1 of several tens of nanometers to several micrometers using wet etching with an acid solution. As shown in FIG. 2, the protrusion has a concave surface and a convex surface. The width w1 described above is the width of the convex surface. By the wet etching using an acid solution, the protrusion having a width w1 of several tens of nm to several μm has a height h1 of several tens of nm to several μm. If there is a protrusion having a width w1 of several tens of nm to several μm on the surface of the glass substrate, the light irradiated on the glass substrate is scattered by the protrusion having a width w1 of several tens of nm to several μm. Since the reflectance of is low, glare is reduced.
一実施の形態において、前記酸溶液は、フッ素系の酸及び硝酸を含む。フッ素系の酸は、例えば、フッ化水素（ＨＦ）及びフッ化アンモニウム（ＮＨ４Ｆ）などを含む。フッ素系の酸及び硝酸を含む酸溶液よるウェットエッチングを用いて、数十ｎｍ〜数μｍの幅を有する突起をガラス基板の上に形成してもよい。 In one embodiment, the acid solution includes a fluorine-based acid and nitric acid. Examples of the fluorine-based acid include hydrogen fluoride (HF) and ammonium fluoride (NH 4 F). A protrusion having a width of several tens of nanometers to several micrometers may be formed on the glass substrate by wet etching using an acid solution containing a fluorine-based acid and nitric acid.
一実施の形態において、前記酸溶液は、フッ化水素（ＨＦ）及び硝酸（ＨＮＯ３）を含むが、フッ化アンモニウム（ＮＨ４Ｆ）、リン酸（Ｈ３ＰＯ４）、塩酸（ＨＣｌ）、水（Ｈ２Ｏ）のうちの少なくとも一種を更に含むことを特徴とする。 In one embodiment, the acid solution includes hydrogen fluoride (HF) and nitric acid (HNO 3 ), but ammonium fluoride (NH 4 F), phosphoric acid (H 3 PO 4 ), hydrochloric acid (HCl), It further includes at least one of water (H 2 O).
一実施の形態において、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であることを特徴とする。 In one embodiment, the content of the hydrogen fluoride is more than 0 wt% and 10 wt% or less with respect to 100 wt% of the acid solution.
以下の化学反応式は、本発明から得られるナノ突起が形成されるプロセスの一例を理論的に類推してみたものであるが、たとえ、その化学反応過程が一部異なるとしても、ナノ突起が形成される結果及びそれから効果には全く変わりがない。 The following chemical reaction formula is a theoretical analogy of an example of the process for forming the nanoprotrusions obtained from the present invention. Even if the chemical reaction process is partially different, the nanoprotrusions are There is no change in the result formed and then the effect.
［数１］
ＳｉＯ２＋６ＨＦ→Ｈ２ＳｉＦ６＋２Ｈ２Ｏ
[Equation 1]
SiO 2 + 6HF → H 2 SiF 6 + 2H 2 O
一般式１に示すように、二酸化ケイ素は、フッ化水素と反応してガラス基板の表面にエッチングが起こり、その結果、ガラス基板の上には、数ｎｍ〜数十ｎｍの幅を有する突起が形成される。 As shown in the general formula 1, silicon dioxide reacts with hydrogen fluoride to cause etching on the surface of the glass substrate. As a result, protrusions having a width of several nm to several tens of nm are formed on the glass substrate. It is formed.
一実施の形態において、前記硝酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上２５重量％以下であることを特徴とする。酸溶液１００重量％に対して、１０重量％以上２５重量％以下である硝酸は、酸化アルミニウムと反応して、上述したプロセスによって形成された数ｎｍ〜数十ｎｍの幅を有する突起を有するガラス基板に数十ｎｍ〜数μｍの幅を有する突起を形成する。 In one embodiment, the nitric acid content is 10 wt% or more and 25 wt% or less with respect to 100 wt% of the acid solution. Nitric acid that is 10 wt% or more and 25 wt% or less with respect to 100 wt% of the acid solution is a glass having protrusions having a width of several nanometers to several tens of nanometers formed by the above-described process by reacting with aluminum oxide A protrusion having a width of several tens of nm to several μm is formed on the substrate.
［数２］
６ＨＮＯ３＋Ａｌ２Ｏ３→２Ａｌ（ＮＯ３）３＋３Ｈ２Ｏ
[Equation 2]
6HNO 3 + Al 2 O 3 → 2Al (NO 3 ) 3 + 3H 2 O
一般式２に従い、硝酸は、上述した一般式１によるエッチングに従って生成された隙間に流れ込んで酸化アルミニウム（Ａｌ２Ｏ３）と反応する。この反応に従いフッ化水素によって形成された突起よりも更に大きな数十ｎｍ〜数μｍの幅を有する突起がガラス基板に形成される。酸溶液１００重量％に対して１０重量％以上２５重量％以下の範囲において硝酸の重量比が高くなればなるほど、ガラス基板の上に更に大きな高さ及び更に大きな幅を有する突起を形成することができる。 According to the general formula 2, nitric acid flows into the gap generated by the etching according to the general formula 1 described above and reacts with aluminum oxide (Al 2 O 3 ). In accordance with this reaction, protrusions having a width of several tens of nanometers to several micrometers larger than the protrusions formed of hydrogen fluoride are formed on the glass substrate. As the weight ratio of nitric acid is higher in the range of 10% by weight to 25% by weight with respect to 100% by weight of the acid solution, a protrusion having a larger height and a larger width can be formed on the glass substrate. it can.
一実施の形態において、前記酸溶液は、フッ化アンモニウムを含むが、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であることを特徴とする。 In one embodiment, the acid solution contains ammonium fluoride, and the content of the ammonium fluoride is greater than 0% by weight and less than or equal to 5% by weight with respect to 100% by weight of the acid solution. To do.
［数３］
ＮＨ４Ｆ<->ＮＨ３＋ＨＦ
[Equation 3]
NH 4 F <-> NH 3 + HF
たとえ、上述した一般式１に従いフッ化水素が減るとしても、一般式３に従いフッ化水素は生成される。これにより、酸溶液におけるフッ化水素の重量比が一定に維持される。フッ化水素の重量比が一定に維持されることにより、安定的なウェットエッチング工程が行われ得る。 Even if hydrogen fluoride decreases according to the general formula 1 described above, hydrogen fluoride is generated according to the general formula 3. Thereby, the weight ratio of hydrogen fluoride in the acid solution is kept constant. By maintaining the weight ratio of hydrogen fluoride constant, a stable wet etching process can be performed.
一実施の形態において、前記酸溶液は、リン酸を含むが、前記リン酸の含量は、前記酸溶液１００重量％に対して０重量％超えであり、５重量％以下であることを特徴とする。 In one embodiment, the acid solution contains phosphoric acid, and the phosphoric acid content is more than 0% by weight and less than 5% by weight with respect to 100% by weight of the acid solution. To do.
［数４］
２Ｈ３ＰＯ４＋Ａｌ２Ｏ３→２Ａｌ（ＰＯ４）＋３Ｈ２Ｏ
[Equation 4]
2H 3 PO 4 + Al 2 O 3 → 2Al (PO 4 ) + 3H 2 O
一般式４に従い、リン酸は、酸化アルミニウム（Ａｌ２Ｏ３）と反応して粗い表面を有する突起の表面を滑らかにする。リン酸は、硝酸に比べて粘性が高いので、硝酸の化学反応に従って形成された突起の表面を滑らかにすることができる。 According to general formula 4, phosphoric acid reacts with aluminum oxide (Al 2 O 3 ) to smooth the surface of the protrusion having a rough surface. Since phosphoric acid has a higher viscosity than nitric acid, the surface of the protrusion formed according to the chemical reaction of nitric acid can be smoothed.
一実施の形態において、前記酸溶液は、塩酸を含むが、前記塩酸の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であることを特徴とする。 In one embodiment, the acid solution contains hydrochloric acid, and the content of the hydrochloric acid is more than 0 wt% and 10 wt% or less with respect to 100 wt% of the acid solution.
［数５］
ＳｉＯ２＋４ＨＣｌ→ＳｉＣｌ４＋２Ｈ２Ｏ
[Equation 5]
SiO 2 + 4HCl → SiCl 4 + 2H 2 O
一般式５に従って、塩酸は、二酸化ケイ素（ＳｉＯ２）と反応して粗い表面を有する突起の表面を滑らかにする。 According to general formula 5, hydrochloric acid reacts with silicon dioxide (SiO 2 ) to smooth the surface of the protrusion having a rough surface.
一実施の形態において、前記酸溶液は、水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸を含むが、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記硝酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上２５重量％以下であり、前記リン酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記塩酸の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、残余が水であることを特徴とする。 In one embodiment, the acid solution includes water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid, and the content of the hydrogen fluoride is 0 with respect to 100% by weight of the acid solution. The content of the ammonium fluoride is more than 0% by weight and 5% by weight or less with respect to 100% by weight of the acid solution, and the content of nitric acid is 100% by weight of the acid solution. % To 10% by weight to 25% by weight, and the phosphoric acid content is greater than 0% by weight and 5% by weight or less with respect to 100% by weight of the acid solution. More than 0% by weight and 10% by weight or less with respect to 100% by weight of the acid solution, and the balance is water.
上述した重量％の水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸が含まれている酸溶液によるウェットエッチング工程によって、ガラス基板には、数十ｎｍ〜数μｍの幅を有する突起が形成される。水は、酸溶液を希釈する。 Projections having a width of several tens of nanometers to several micrometers on the glass substrate by the wet etching process using the acid solution containing water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid of the above-described weight percent. Is formed. Water dilutes the acid solution.
図３は、一実施の形態に係る防眩層が形成されたガラス基板の走査電子顕微鏡写真である。ガラス基板に形成された突起の幅は、数十ｎｍ〜数μｍである。図４は、図３の拡大された走査電子顕微鏡写真である。 FIG. 3 is a scanning electron micrograph of a glass substrate on which an antiglare layer according to one embodiment is formed. The width of the protrusion formed on the glass substrate is several tens of nm to several μm. FIG. 4 is an enlarged scanning electron micrograph of FIG.
図５は、一実施の形態に係る反射防止層が形成されたガラス基板の断面図を示す。 FIG. 5 shows a cross-sectional view of a glass substrate on which an antireflection layer according to one embodiment is formed.
一実施の形態において、前記突起を形成するステップは、酸溶液によるウェットエッチングを用いて、数ｎｍ〜数十ｎｍの幅ｗ２を有する突起を有する反射防止層を形成するステップを含む。突起は、図５に示すように、凹面及び凸面を有する。上述した幅ｗ２は、凸面の幅である。ガラス基板の表面に数ｎｍ〜数十ｎｍの幅ｗ２を有する突起があれば、これらの突起によってガラス基板に照射された光の透過率が高くなり、反射率は低くなる。 In one embodiment, the step of forming the protrusion includes a step of forming an antireflection layer having a protrusion having a width w2 of several nanometers to several tens of nanometers using wet etching with an acid solution. As shown in FIG. 5, the protrusion has a concave surface and a convex surface. The width w2 described above is the width of the convex surface. If there are protrusions having a width w2 of several nanometers to several tens of nanometers on the surface of the glass substrate, the transmittance of light irradiated to the glass substrate by these protrusions is increased, and the reflectance is decreased.
一実施の形態において、前記酸溶液は、フッ素系の酸を含む。フッ素系の酸は、例えば、フッ化水素（ＨＦ）及びフッ化アンモニウム（ＮＨ４Ｆ）などを含む。フッ素系の酸を含む酸溶液によるウェットエッチングを用いて、数ｎｍ〜数十ｎｍの幅を有する突起をガラス基板の上に形成してもよい。 In one embodiment, the acid solution contains a fluorine-based acid. Examples of the fluorine-based acid include hydrogen fluoride (HF) and ammonium fluoride (NH 4 F). Projections having a width of several nanometers to several tens of nanometers may be formed on the glass substrate by wet etching using an acid solution containing a fluorine-based acid.
一実施の形態において、前記酸溶液は、フッ化水素を含むが、フッ化アンモニウム、リン酸、硝酸、塩酸のうちの少なくとも一種を更に含むことを特徴とする。 In one embodiment, the acid solution contains hydrogen fluoride, and further contains at least one of ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid.
一実施の形態において、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であることを特徴とする。 In one embodiment, the content of the hydrogen fluoride is more than 0 wt% and 10 wt% or less with respect to 100 wt% of the acid solution.
［数６］
ＳｉＯ２＋６ＨＦ→Ｈ２ＳｉＦ６＋２Ｈ２Ｏ
[Equation 6]
SiO 2 + 6HF → H 2 SiF 6 + 2H 2 O
一般式６に示すように、二酸化ケイ素は、フッ化水素と反応して、ガラス基板の表面にエッチングが起こり、その結果、ガラス基板の上には、数ｎｍ〜数十ｎｍの幅を有する突起が形成される。 As shown in the general formula 6, silicon dioxide reacts with hydrogen fluoride to cause etching on the surface of the glass substrate. As a result, protrusions having a width of several nm to several tens of nm are formed on the glass substrate. Is formed.
一実施の形態において、前記酸溶液は、フッ化アンモニウムを含むが、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であることを特徴とする。 In one embodiment, the acid solution contains ammonium fluoride, and the content of the ammonium fluoride is greater than 0% by weight and less than or equal to 5% by weight with respect to 100% by weight of the acid solution. To do.
［数７］
ＮＨ４Ｆ<->ＮＨ３＋ＨＦ
[Equation 7]
NH 4 F <-> NH 3 + HF
たとえ上述した一般式６に従ってフッ化水素が減るとしても、一般式７に従ってフッ化水素は生成される。これにより、酸溶液におけるフッ化水素の重量比が一定に維持される。フッ化水素の重量比が一定に維持されることにより、安定的なウェットエッチング工程が行われ得る。 Even if hydrogen fluoride decreases according to the general formula 6 described above, hydrogen fluoride is generated according to the general formula 7. Thereby, the weight ratio of hydrogen fluoride in the acid solution is kept constant. By maintaining the weight ratio of hydrogen fluoride constant, a stable wet etching process can be performed.
一実施の形態において、前記酸溶液は、硝酸を含むが、前記硝酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であることを特徴とする。酸溶液１００重量％に対して、０重量％超え５重量％以下の硝酸は、フッ化水素によって形成された突起の大きさを数ｎｍ〜数十ｎｍの範囲に維持する役割を果たす。 In one embodiment, the acid solution contains nitric acid, and the content of the nitric acid is more than 0 wt% and 5 wt% or less with respect to 100 wt% of the acid solution. Nitric acid of 0% by weight to 5% by weight or less with respect to 100% by weight of the acid solution serves to maintain the size of the protrusions formed by hydrogen fluoride in the range of several nm to several tens of nm.
［数８］
６ＨＮＯ３＋Ａｌ２Ｏ３→２Ａｌ（ＮＯ３）３＋３Ｈ２Ｏ
[Equation 8]
6HNO 3 + Al 2 O 3 → 2Al (NO 3 ) 3 + 3H 2 O
一般式８に従って、硝酸は、上述した一般式６によるエッチングに従って生成された隙間に流れ込んで酸化アルミニウム（Ａｌ２Ｏ３）と反応する。上述した反応に従ってガラス基板に数ｎｍ〜数十ｎｍの幅を有する突起が形成される。 According to the general formula 8, nitric acid flows into the gap generated by the etching according to the general formula 6 described above and reacts with aluminum oxide (Al 2 O 3 ). According to the above-described reaction, protrusions having a width of several nm to several tens of nm are formed on the glass substrate.
酸溶液１００重量％に対して、１０重量％以上２５重量％以下の範囲においては、上述したように、硝酸の重量比が高くなればなるほど、ガラス基板の上に数μｍまでの大きな幅を有する突起を形成することができる。これに対し、酸溶液１００重量％に対して、０重量％超え５重量％以下である硝酸は、ガラス基板の上に形成された突起の幅を数ｎｍ〜数十ｎｍの範囲において一定に維持する。 In the range of 10% by weight to 25% by weight with respect to 100% by weight of the acid solution, as described above, the higher the weight ratio of nitric acid, the greater the width up to several μm on the glass substrate. A protrusion can be formed. On the other hand, nitric acid that is greater than 0% by weight and less than or equal to 5% by weight with respect to 100% by weight of the acid solution maintains the width of the protrusions formed on the glass substrate constant in the range of several nm to several tens of nm. To do.
一実施の形態において、前記酸溶液は、リン酸を含むが、前記リン酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であることを特徴とする。 In one embodiment, the acid solution contains phosphoric acid, and the phosphoric acid content is more than 0 wt% and not more than 5 wt% with respect to 100 wt% of the acid solution.
［数９］
２Ｈ３ＰＯ４＋Ａｌ２Ｏ３→２Ａｌ（ＰＯ４）＋３Ｈ２Ｏ
[Equation 9]
2H 3 PO 4 + Al 2 O 3 → 2Al (PO 4 ) + 3H 2 O
一般式９に従って、リン酸は、酸化アルミニウム（Ａｌ２Ｏ３）と反応して、粗い表面を有する突起の表面を滑らかにする。リン酸は、硝酸に比べて粘性が高いので、硝酸の化学反応に従って形成された突起の表面を滑らかにすることができる。 In accordance with general formula 9, phosphoric acid reacts with aluminum oxide (Al 2 O 3 ) to smooth the surface of the protrusion having a rough surface. Since phosphoric acid has a higher viscosity than nitric acid, the surface of the protrusion formed according to the chemical reaction of nitric acid can be smoothed.
一実施の形態において、前記酸溶液は、塩酸を含むが、前記塩酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上４０重量％以下であることを特徴とする。 In one embodiment, the acid solution includes hydrochloric acid, and the content of the hydrochloric acid is 10 wt% or more and 40 wt% or less with respect to 100 wt% of the acid solution.
［数１０］
ＳｉＯ２＋４ＨＣｌ→ＳｉＣｌ４＋２Ｈ２Ｏ
[Equation 10]
SiO 2 + 4HCl → SiCl 4 + 2H 2 O
一般式１０に従って、塩酸は、二酸化ケイ素（ＳｉＯ２）と反応して、粗い表面を有する突起の表面を滑らかにする。 In accordance with general formula 10, hydrochloric acid reacts with silicon dioxide (SiO 2 ) to smooth the surface of the protrusion having a rough surface.
一実施の形態において、前記酸溶液は、水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸を含むが、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記硝酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記リン酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記塩酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上４０重量％以下であり、残余が水であることを特徴とする。 In one embodiment, the acid solution includes water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid, and the content of the hydrogen fluoride is 0 with respect to 100% by weight of the acid solution. The content of the ammonium fluoride is more than 0% by weight and 5% by weight or less with respect to 100% by weight of the acid solution, and the content of nitric acid is 100% by weight of the acid solution. % To 0% by weight to 5% by weight or less, and the phosphoric acid content is 0% to 5% by weight to 100% by weight of the acid solution. The acid solution is 10% by weight to 40% by weight with respect to 100% by weight of the acid solution, and the remainder is water.
上述した重量％の水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸が含まれている酸溶液によるウェットエッチング工程によって、ガラス基板には、数ｎｍ〜数十ｎｍの幅を有する突起が形成される。水は、酸溶液を希釈する。 A protrusion having a width of several nm to several tens of nm is formed on the glass substrate by the wet etching process using the acid solution containing water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid of the above-described weight percent. Is formed. Water dilutes the acid solution.
図６は、一実施の形態に係る反射防止層が形成されたガラス基板の走査電子顕微鏡写真である。ガラス基板に形成された突起の幅は、数ｎｍ〜数十ｎｍであり、図７は、図６の拡大された走査電子顕微鏡写真である。 FIG. 6 is a scanning electron micrograph of a glass substrate on which an antireflection layer according to one embodiment is formed. The protrusions formed on the glass substrate have a width of several nm to several tens of nm, and FIG. 7 is an enlarged scanning electron micrograph of FIG.
図８は、一実施の形態に係る防眩層及び反射防止層が一緒に形成されたガラス基板の断面図を示す。 FIG. 8 shows a cross-sectional view of a glass substrate on which an antiglare layer and an antireflection layer according to an embodiment are formed together.
一実施の形態において、前記突起を形成するステップは、酸溶液による１次ウェットエッチングを用いて、数十ｎｍ〜数μｍの幅を有する突起を有する防眩層を形成するステップと、酸溶液による２次ウェットエッチングを用いて、前記防眩層の上に数ｎｍ〜数十ｎｍの幅を有する突起を有する反射防止層を形成するステップと、を含む。 In one embodiment, the step of forming the protrusion includes a step of forming an antiglare layer having a protrusion having a width of several tens of nm to several μm using primary wet etching with an acid solution, and an acid solution. Forming an antireflection layer having a protrusion having a width of several nanometers to several tens of nanometers on the antiglare layer using secondary wet etching.
防眩・反射防止層を形成するステップにおいては、まず、酸溶液による１次ウェットエッチングを用いて、数十ｎｍ〜数μｍの幅を有する突起を有する防眩層を形成する。 In the step of forming the antiglare / antireflection layer, first, an antiglare layer having protrusions having a width of several tens of nanometers to several μm is formed by primary wet etching using an acid solution.
上述した酸溶液は、水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸を含むが、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記硝酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上２５重量％以下であり、前記リン酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記塩酸の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、残余が水であることを特徴とする。 The acid solution described above contains water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid. The content of the hydrogen fluoride is more than 0% by weight and 10% by weight with respect to 100% by weight of the acid solution. The content of the ammonium fluoride is 0% by weight to 5% by weight or less with respect to 100% by weight of the acid solution, and the content of nitric acid is 100% by weight with respect to the acid solution. 10 wt% or more and 25 wt% or less, the phosphoric acid content is greater than 0 wt% and 5 wt% or less with respect to 100 wt% of the acid solution, and the hydrochloric acid content is 100 wt% of the acid solution. %, More than 0% by weight and 10% by weight or less, with the remainder being water.
防眩・反射防止層を形成するステップにおいては、防眩層を形成するステップの後に、酸溶液による２次ウェットエッチングを用いて、前記防眩層の上に数ｎｍ〜数十ｎｍの幅を有する突起を有する反射防止層を形成する。 In the step of forming the antiglare / antireflection layer, after the step of forming the antiglare layer, secondary wet etching with an acid solution is used to form a width of several nm to several tens of nm on the antiglare layer. An antireflection layer having protrusions is formed.
上述した酸溶液は、水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸を含むが、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記硝酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記リン酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記塩酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上４０重量％以下であり、残余が水であることを特徴とする。 The acid solution described above contains water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid. The content of the hydrogen fluoride is more than 0% by weight and 10% by weight with respect to 100% by weight of the acid solution. The content of the ammonium fluoride is 0% by weight to 5% by weight or less with respect to 100% by weight of the acid solution, and the content of nitric acid is 100% by weight with respect to the acid solution. The content of phosphoric acid is 0% to 5% by weight with respect to 100% by weight of the acid solution, and the content of hydrochloric acid is 100% by weight of the acid solution. % To 10% by weight and up to 40% by weight with the balance being water.
数十ｎｍ〜数μｍの幅ｗ１を有する突起が形成されることにより、ガラス基板の光に対する透過率及び反射率が低くなる。次いで、数十ｎｍ〜数μｍの幅ｗ１を有する突起の上に数ｎｍ〜数十ｎｍの幅ｗ２を有する突起が更に形成されることにより、透過率は相対的に高くなり、反射率は更に低くなる。これにより、防眩・反射防止を行うガラス基板が作製される。 By forming the protrusion having a width w1 of several tens of nm to several μm, the transmittance and reflectance of the glass substrate with respect to light are lowered. Next, by further forming a protrusion having a width w2 of several nanometers to several tens of nanometers on a protrusion having a width w1 of several tens of nanometers to several micrometers, the transmittance is relatively high, and the reflectance is further increased. Lower. Thereby, the glass substrate which performs glare-proof and reflection prevention is produced.
図９は、一実施の形態に係る防眩層及び反射防止層が一緒に形成されたガラス基板の走査電子顕微鏡写真である。図９の下にある写真は、図９の上に示す写真の四角形領域を更に拡大した写真である。 FIG. 9 is a scanning electron micrograph of a glass substrate on which an antiglare layer and an antireflection layer according to one embodiment are formed together. The photograph at the bottom of FIG. 9 is a photograph in which the rectangular area of the photograph shown at the top of FIG. 9 is further enlarged.
図１０は、本発明ではなく、従来の方法によってガラス基板に形成された数μｍ〜数百μｍの大きさの突起と溝に更に反射防止層が形成されたガラス基板の断面図を示す。 FIG. 10 is a cross-sectional view of a glass substrate in which an antireflection layer is further formed on protrusions and grooves having a size of several μm to several hundred μm formed on the glass substrate by a conventional method, not the present invention.
一実施の形態において、本発明ではなく、従来の方法によってガラス基板に形成された数μｍ〜数百μｍの大きさの突起を有する防眩層の上に酸溶液によるウェットエッチングを用いて、更に数ｎｍ〜数十ｎｍの幅を有する突起を有する反射防止層を形成するステップを更に含んでいてもよい。図１１は、従来の方法によって形成された数μｍ〜数百μｍの大きさを有する突起を有する防眩層の上に数ｎｍ〜数十ｎｍの大きさの反射防止層が更に形成されたガラス基板の走査電子顕微鏡写真である。 In one embodiment, instead of the present invention, wet etching with an acid solution is further used on an antiglare layer having protrusions with a size of several μm to several hundred μm formed on a glass substrate by a conventional method, A step of forming an antireflection layer having protrusions having a width of several nm to several tens of nm may be further included. FIG. 11 shows a glass in which an antireflection layer having a size of several nanometers to several tens of nanometers is further formed on an antiglare layer having protrusions having a size of several micrometers to several hundreds of micrometers formed by a conventional method. It is a scanning electron micrograph of a substrate.
上述した酸溶液は、水、フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸を含むが、前記フッ化水素の含量は、前記酸溶液１００重量％に対して、０重量％超え１０重量％以下であり、前記フッ化アンモニウムの含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記硝酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記リン酸の含量は、前記酸溶液１００重量％に対して、０重量％超え５重量％以下であり、前記塩酸の含量は、前記酸溶液１００重量％に対して、１０重量％以上４０重量％以下であり、残余が水であることを特徴とする。 The acid solution described above contains water, hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid. The content of the ammonium fluoride is 0% by weight to 5% by weight or less based on 100% by weight of the acid solution, and the content of nitric acid is 100% by weight of the acid solution. The content of phosphoric acid is 0% to 5% by weight with respect to 100% by weight of the acid solution, and the content of hydrochloric acid is 100% by weight of the acid solution. % To 10% by weight and up to 40% by weight with the balance being water.
図１１の下にある写真は、上の四角形部分を拡大して反射防止層を観察した走査電子顕微鏡写真である。 The photograph at the bottom of FIG. 11 is a scanning electron micrograph in which the upper rectangular portion is enlarged and the antireflection layer is observed.
図６、図９及び図１１の走査電子顕微鏡写真から、本発明のナノ突起表面の形成方法によって形成された母材の表面は、表面の突起がウェットエッチングによって形成され、前記ウェットエッチングは、エッチングの前にマスクなどの選択的エッチング抵抗手段を形成しないことによって、前記突起の形成された状態が突起相互間の位置及び突起の大きさや形状においていかなる規則性も有さないということを確認することができる。 From the scanning electron micrographs of FIGS. 6, 9 and 11, the surface of the base material formed by the method of forming a nanoprotrusion surface of the present invention has a surface protrusion formed by wet etching, and the wet etching is performed by etching. By confirming that the selective etching resistance means such as a mask is not formed before the step, it is confirmed that the state where the protrusions are formed does not have any regularity in the position between the protrusions and the size and shape of the protrusions. Can do.
上記のような表面突起の非規則性は、マスクレスウェットエッチングによって得られる固有の特徴であるといえる。 It can be said that the irregularity of the surface protrusion as described above is a unique feature obtained by maskless wet etching.
図１２は、本発明に係る突起の形成方法によって反射防止層が形成されたガラス又はポリマーフィルムを含むスマートフォンの写真である。 FIG. 12 is a photograph of a smartphone including a glass or polymer film on which an antireflection layer is formed by the method for forming protrusions according to the present invention.
図１２を参照すると、真ん中の点線を基準として、スマートフォンが含むガラスの左側には、本発明に係る突起の形成方法によって反射防止層が形成されている。スマートフォンが含むガラスの右側には、本発明に係る突起の形成方法によって反射防止層が形成されていない。右側に比べて、左側のガラスに形成された指紋の方が濃くないということを確認することができる。 Referring to FIG. 12, an antireflection layer is formed on the left side of the glass included in the smartphone with the middle dotted line as a reference, by the protrusion forming method according to the present invention. The antireflection layer is not formed on the right side of the glass included in the smartphone by the method for forming protrusions according to the present invention. It can be confirmed that the fingerprint formed on the left glass is not darker than the right side.
このように、本発明が属する技術分野において通常の知識を有する者であれば、本発明がその技術的な思想や必須的な特徴を変更することなく、他の具体的な実施形態として実施可能であるということを認知することができる筈である。よって、上述した実施の形態は単なる例示的なものに過ぎず、その範囲を制限しておいた限定的なものではないものと理解すべきである。また、図示の手順図は、本発明を実施するに当たって最も好適な結果を達成するために例示的に示す順次的な手順を示すものに過ぎず、他の更なるステップが提供されてもよく、一部のステップが削除されてもよいということはいうまでもない。 As described above, if the person has ordinary knowledge in the technical field to which the present invention belongs, the present invention can be implemented as another specific embodiment without changing the technical idea and essential features. It should be able to recognize that it is. Therefore, it should be understood that the above-described embodiment is merely an example, and is not limited to a limited scope. Also, the illustrated procedural diagram is merely illustrative of a sequential procedure shown to achieve the most favorable results in practicing the present invention, and other additional steps may be provided, It goes without saying that some steps may be deleted.
本発明の範囲は、上記の詳細な説明よりは、後述する特許請求の範囲によって開示され、特許請求の範囲の意味及び範囲、並びにその等価概念から導き出されるあらゆる変更又は変形された形態が本発明の権利範囲に含まれるものと解釈されるべきである。 The scope of the present invention is disclosed by the following claims rather than the above detailed description, and all modifications or variations derived from the meaning and scope of the claims and equivalent concepts thereof are disclosed in the present invention. Should be construed as included in the scope of rights.
１００：ガラス基板 100: Glass substrate
Claims (18)
ウェットエッチングで前記母材の表面にナノ突起を形成するステップを含むが、
前記ウェットエッチングの前に母材の表面にマスクなどの選択的エッチング抵抗手段を形成する事前ステップ及び前記ウェットエッチングの後に前記マスクなどの選択的エッチング抵抗手段を除去する事後除去ステップを有さないことを特徴とする突起の形成方法。 A method of forming protrusions on the surface of a base material (glass or polymer film substrate),
Forming a nano protrusion on the surface of the base material by wet etching,
There is no pre-step for forming a selective etching resistance means such as a mask on the surface of the base material before the wet etching and a post-removal step for removing the selective etching resistance means such as the mask after the wet etching. A method of forming a protrusion characterized by the above.
酸溶液を用いたウェットエッチングで数十ｎｍ〜数μｍの幅の突起を有する防眩層を形成するか、又は酸溶液を用いたウェットエッチングで数ｎｍ〜数十ｎｍの幅の突起を有する反射防止層を形成するステップを含む請求項１に記載の突起の形成方法。 The step of forming the protrusion includes
Reflection having a protrusion having a width of several tens to several tens of nm by wet etching using an acid solution or forming a glare-proof layer having a protrusion of several tens to several μm by wet etching using an acid solution The method for forming a protrusion according to claim 1, comprising a step of forming a prevention layer.
フッ素系の酸及び硝酸を含むことを特徴とする請求項２に記載の突起の形成方法。 When forming the antiglare layer, the acid solution is
The method for forming protrusions according to claim 2, comprising a fluorine-based acid and nitric acid.
フッ素系の酸を含むことを特徴とする請求項２に記載の突起の形成方法。 When forming the antireflection layer, the acid solution is:
The method for forming protrusions according to claim 2, comprising a fluorine-based acid.
フッ化水素及び硝酸を含むが、
フッ化アンモニウム、リン酸、塩酸のうちの少なくとも一種を更に含むことを特徴とする請求項２に記載の突起の形成方法。 When forming the antiglare layer, the acid solution is
Contains hydrogen fluoride and nitric acid,
The method for forming protrusions according to claim 2, further comprising at least one of ammonium fluoride, phosphoric acid, and hydrochloric acid.
フッ化水素を含むが、
フッ化アンモニウム、リン酸、硝酸、塩酸のうちの少なくとも一種を更に含むことを特徴とする請求項２に記載の突起の形成方法。 When forming the antireflection layer, the acid solution is:
Contains hydrogen fluoride,
The method for forming protrusions according to claim 2, further comprising at least one of ammonium fluoride, phosphoric acid, nitric acid, and hydrochloric acid.
その含量は、１０重量％以下であることを特徴とする請求項５に記載の突起の形成方法。 When hydrochloric acid is included in the acid solution,
The method for forming protrusions according to claim 5, wherein the content is 10% by weight or less.
フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸及び水を含むが、
前記酸溶液１００重量％への各成分の含量は、
前記フッ化水素は１０重量％以下、前記フッ化アンモニウムは５重量％以下、
前記硝酸は１０重量％以上２５重量％以下、
前記リン酸は５重量％以下、
前記塩酸は１０重量％以下であり、且つ、残余が前記水であることを特徴とする請求項２に記載の突起の形成方法。 When forming the antiglare layer, the acid solution is
Including hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, hydrochloric acid and water,
The content of each component in 100% by weight of the acid solution is as follows:
The hydrogen fluoride is 10% by weight or less, the ammonium fluoride is 5% by weight or less,
The nitric acid is 10 wt% or more and 25 wt% or less,
The phosphoric acid is 5 wt% or less,
The method for forming protrusions according to claim 2, wherein the hydrochloric acid is 10% by weight or less, and the balance is the water.
フッ化水素、フッ化アンモニウム、リン酸、硝酸、塩酸及び水を含むが、
前記酸溶液１００重量％への各成分の含量は、
前記フッ化水素は１０重量％以下、前記フッ化アンモニウムは５重量％以下、前記硝酸は５重量％以下、前記リン酸は５重量％以下、前記塩酸は１０重量％以上４０重量％以下であり、且つ、残余が水であることを特徴とする請求項２に記載の突起の形成方法。 When forming the antireflection layer, the acid solution is:
Including hydrogen fluoride, ammonium fluoride, phosphoric acid, nitric acid, hydrochloric acid and water,
The content of each component in 100% by weight of the acid solution is as follows:
The hydrogen fluoride is 10 wt% or less, the ammonium fluoride is 5 wt% or less, the nitric acid is 5 wt% or less, the phosphoric acid is 5 wt% or less, and the hydrochloric acid is 10 wt% or more and 40 wt% or less. The method for forming protrusions according to claim 2, wherein the balance is water.
酸溶液による１次ウェットエッチングを用いて、数十ｎｍ〜数μｍの幅を有する突起を有する防眩層を形成するステップと、
酸溶液による２次ウェットエッチングを用いて、前記防眩層の上に数ｎｍ〜数十ｎｍの幅を有する突起を有する反射防止層を形成するステップと、を含む請求項１に記載の突起の形成方法。 The step of forming the protrusion includes
Forming an antiglare layer having a protrusion having a width of several tens of nanometers to several micrometers using primary wet etching with an acid solution;
Forming an antireflection layer having a protrusion having a width of several nanometers to several tens of nanometers on the antiglare layer using secondary wet etching with an acid solution. Forming method.
前記突起がウェットエッチングによって形成され、
前記ウェットエッチングは、エッチングの前にマスクなどの選択的エッチング抵抗手段の形成プロセスなしに行われ、
前記マスクなどの選択的エッチング抵抗手段を形成しないことによって、前記突起の形成された状態が、突起相互間の位置及び突起の大きさや形状においていかなる規則性も有さないことを特徴とする母材。 A base material having a plurality of protrusions formed on the surface,
The protrusion is formed by wet etching,
The wet etching is performed without a process of forming selective etching resistance means such as a mask before etching,
A base material characterized in that, by not forming selective etching resistance means such as the mask, the state in which the protrusions are formed does not have any regularity in the position between the protrusions and the size or shape of the protrusions. .
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| KR1020170043110A KR20180016928A (en) | 2017-04-03 | 2017-04-03 | Method for forming nano-protrusion surface and the parent material having such nano-protrusion surface |
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