JP2019520472A - 誘電体堆積で使用するための消失しないアノード - Google Patents
誘電体堆積で使用するための消失しないアノード Download PDFInfo
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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Abstract
Description
Claims (14)
- プラズマ処理チャンバのための処理キットであって、
導電性本体を含み、前記本体は、前記プラズマ処理チャンバ内で前記本体が使用中であるとき、前記本体の頂部および垂直中心線を画定する向きを有し、前記本体が、前記処理チャンバ内で使用中であるときプラズマに曝される前記本体の表面に形成された特徴物のアレイを有し、前記特徴物が前記表面に開口を有し、前記特徴物がプロファイルを有し、前記プロファイルが、前記開口を通って前記本体の前記頂部から離れるように延びる幾何学的中心線を有し、前記幾何学的中心線が、前記本体の前記垂直中心線と鈍角を形成する、プラズマ処理チャンバのための処理キット。 - 前記特徴物は、
前記本体の前記頂部に最も近い前記開口の側に画定された張出し部分をさらに含み、前記プロファイルのより大きい部分が、前記垂直中心線を通って垂直に延び、前記張出し部分の先端と交差する想像線の上に存在する、請求項1に記載の処理キット。 - 前記導電性本体が、堆積リング、カバーリング、または円筒状シールドのうちの1つまたは複数として構成される、請求項1に記載の処理キット。
- 前記本体の前記表面がグリットブラストテクスチャを有し、前記グリットブラストテクスチャが約175μinから約450μinの間の表面粗さを有する、請求項1に記載の処理キット。
- 前記表面特徴物の前記プロファイルが、少なくとも約15cm2の組合せ面積を有し、前記垂直中心線の垂線に対してある角度で形成される、請求項1に記載の処理キット。
- RF物理的気相堆積(RFPVD)チャンバのための処理キットであって、
導電性本体を含み、前記本体は、前記RFPVDチャンバ内で前記処理キットが使用中であるとき、前記本体の頂部および垂直中心線を画定する向きを有し、前記本体は、前記処理キットが前記RFPVDチャンバ内で使用中であるときプラズマに曝される前記本体の実質的に垂直な表面に形成された特徴物のアレイを有し、前記特徴物が前記表面に開口を有し、前記特徴物がプロファイルを有し、前記プロファイルのより大きい部分が、前記垂直中心線を通って垂直に延びる想像線の上で、前記本体の前記頂部に最も近い前記開口のエッジの上に存在する、処理キット。 - 前記特徴物の前記プロファイルが、
前記開口を通って前記本体の前記頂部から離れるように延びる幾何学的中心線をさらに含み、前記幾何学的中心線が、前記本体の前記垂直中心線と鈍角を形成し、前記特徴物は、前記処理キットが前記RFPVDチャンバ内で使用中であるときスパッタリングターゲットへの直線露出を防止する構成を有する影区域を有する、請求項6に記載の処理キット。 - 前記導電性本体が堆積リングとして構成される、請求項6に記載の処理キット。
- 前記導電性本体がカバーリングとして構成される、請求項6に記載の処理キット。
- 前記導電性本体が円筒状シールドとして構成され、前記垂直表面が前記本体の内側円筒状側壁を画定する、請求項6に記載の処理キット。
- 前記本体の前記表面がグリットブラストテクスチャを有し、前記グリットブラストテクスチャが約175μinから約450μinの間の表面粗さを有する、請求項6に記載の処理キット。
- 前記表面特徴物の前記プロファイルが、少なくとも約15cm2の組合せ面積を有し、前記垂直中心線の垂線に対してある角度で形成される、請求項6に記載の処理キット。
- 内部容積部に画定されたチャンバ本体と、
前記内部容積部に配設された基板支持体と、
前記基板支持体の上の前記内部容積部に配設されたスパッタリングターゲットと、
前記基板支持体と前記スパッタリングターゲットとの間の前記内部容積部に配設された処理キットとを含み、前記処理キットが、
垂直中心線を有する導電性本体を含み、前記本体が、前記PVDチャンバ内で使用中であるときプラズマに曝される前記本体の表面に形成された特徴物のアレイを有し、前記特徴物が前記表面に開口を有し、前記特徴物がプロファイルを有し、前記プロファイルが、前記開口を通って前記ターゲットから離れるように延びる幾何学的中心線を有し、前記幾何学的中心線が、前記本体の前記垂直中心線と鈍角を形成する、物理的気相堆積(PVD)チャンバ。 - 前記特徴物の前記プロファイルが、前記垂直中心線を通って垂直に延びる想像線の上で、前記本体の頂部に最も近い前記開口のエッジの上に存在するより大きい部分を有する、請求項13に記載のPVDチャンバ。
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US201662328426P | 2016-04-27 | 2016-04-27 | |
US62/328,426 | 2016-04-27 | ||
US15/432,590 | 2017-02-14 | ||
US15/432,590 US11114289B2 (en) | 2016-04-27 | 2017-02-14 | Non-disappearing anode for use with dielectric deposition |
PCT/US2017/024749 WO2017189146A1 (en) | 2016-04-27 | 2017-03-29 | Non-disappearing anode for use with dielectric deposition |
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EP (1) | EP3449496B1 (ja) |
JP (1) | JP7229769B2 (ja) |
CN (1) | CN109075008B (ja) |
TW (1) | TWI758284B (ja) |
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US11685990B2 (en) * | 2017-12-08 | 2023-06-27 | Applied Materials, Inc. | Textured processing chamber components and methods of manufacturing same |
CN111602235A (zh) * | 2018-01-29 | 2020-08-28 | 应用材料公司 | 用于在pvd处理中减少颗粒的处理配件几何形状 |
WO2020023174A1 (en) * | 2018-07-23 | 2020-01-30 | Applied Materials, Inc. | Pre-conditioned chamber components |
CN111041434B (zh) * | 2020-03-17 | 2020-06-19 | 上海陛通半导体能源科技股份有限公司 | 用于沉积绝缘膜的物理气相沉积设备 |
CN112555112B (zh) * | 2020-11-06 | 2022-06-14 | 兰州空间技术物理研究所 | 基于3d增材制造的离子推力器内表面纹理化异形结构阳极 |
US11508563B1 (en) * | 2021-05-24 | 2022-11-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate using improved shield configurations |
US20230187250A1 (en) * | 2021-12-14 | 2023-06-15 | Applied Materials, Inc. | Wafer to baseplate arc prevention using textured dielectric |
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- 2017-03-29 CN CN201780025858.5A patent/CN109075008B/zh active Active
- 2017-03-29 WO PCT/US2017/024749 patent/WO2017189146A1/en active Application Filing
- 2017-03-29 EP EP17790063.6A patent/EP3449496B1/en active Active
- 2017-03-29 JP JP2018545945A patent/JP7229769B2/ja active Active
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CN109075008B (zh) | 2022-04-19 |
US11114289B2 (en) | 2021-09-07 |
WO2017189146A1 (en) | 2017-11-02 |
EP3449496B1 (en) | 2021-07-07 |
EP3449496A1 (en) | 2019-03-06 |
EP3449496A4 (en) | 2020-01-01 |
TWI758284B (zh) | 2022-03-21 |
US20170316924A1 (en) | 2017-11-02 |
CN109075008A (zh) | 2018-12-21 |
TW201802274A (zh) | 2018-01-16 |
JP7229769B2 (ja) | 2023-02-28 |
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