JP2019516238A - コバルト及び/又はコバルト合金含有基板を研磨するための化学機械研磨(cmp)組成物を使用する方法 - Google Patents
コバルト及び/又はコバルト合金含有基板を研磨するための化学機械研磨(cmp)組成物を使用する方法 Download PDFInfo
- Publication number
- JP2019516238A JP2019516238A JP2018550450A JP2018550450A JP2019516238A JP 2019516238 A JP2019516238 A JP 2019516238A JP 2018550450 A JP2018550450 A JP 2018550450A JP 2018550450 A JP2018550450 A JP 2018550450A JP 2019516238 A JP2019516238 A JP 2019516238A
- Authority
- JP
- Japan
- Prior art keywords
- cmp
- cobalt
- composition
- poly
- cmp composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 137
- 238000005498 polishing Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000010941 cobalt Substances 0.000 title claims abstract description 59
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 56
- 229910000531 Co alloy Inorganic materials 0.000 title claims abstract description 44
- 239000000126 substance Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 229920001308 poly(aminoacid) Polymers 0.000 claims abstract description 29
- 239000010954 inorganic particle Substances 0.000 claims abstract description 24
- 150000003839 salts Chemical class 0.000 claims abstract description 24
- 150000001413 amino acids Chemical class 0.000 claims abstract description 23
- 239000012736 aqueous medium Substances 0.000 claims abstract description 20
- 239000007800 oxidant agent Substances 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 29
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 28
- 235000001014 amino acid Nutrition 0.000 claims description 22
- 229920001577 copolymer Polymers 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- 239000004471 Glycine Substances 0.000 claims description 14
- 229920000805 Polyaspartic acid Polymers 0.000 claims description 11
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 10
- 235000003704 aspartic acid Nutrition 0.000 claims description 10
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 10
- 239000008119 colloidal silica Substances 0.000 claims description 10
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 9
- 239000004472 Lysine Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims description 8
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 8
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 8
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 8
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 8
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims description 8
- 235000013922 glutamic acid Nutrition 0.000 claims description 8
- 239000004220 glutamic acid Substances 0.000 claims description 8
- 235000018977 lysine Nutrition 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 235000013930 proline Nutrition 0.000 claims description 8
- 235000004400 serine Nutrition 0.000 claims description 8
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 claims description 7
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 7
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 claims description 7
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 7
- 235000005772 leucine Nutrition 0.000 claims description 7
- 229920002643 polyglutamic acid Polymers 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- 239000004474 valine Substances 0.000 claims description 7
- 235000014393 valine Nutrition 0.000 claims description 7
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 6
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 6
- 235000018417 cysteine Nutrition 0.000 claims description 6
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims description 6
- 235000004279 alanine Nutrition 0.000 claims description 5
- 229920000656 polylysine Polymers 0.000 claims description 5
- 235000002639 sodium chloride Nutrition 0.000 claims description 5
- 150000002978 peroxides Chemical class 0.000 claims description 4
- 229930195712 glutamate Natural products 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 34
- 239000010949 copper Substances 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 19
- 229940024606 amino acid Drugs 0.000 description 18
- 239000002002 slurry Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 10
- 239000000654 additive Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 238000002296 dynamic light scattering Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- 208000012868 Overgrowth Diseases 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- -1 ammonium cation compound Chemical class 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 5
- 239000012964 benzotriazole Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000008139 complexing agent Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000003139 biocide Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 150000002738 metalloids Chemical class 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 235000008206 alpha-amino acids Nutrition 0.000 description 3
- 230000003115 biocidal effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 229920001519 homopolymer Polymers 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 108010064470 polyaspartate Proteins 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 239000004475 Arginine Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 2
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWIPBPIJVVSXNR-UHFFFAOYSA-N ON=[NH]=O Chemical class ON=[NH]=O MWIPBPIJVVSXNR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229920002197 Sodium polyaspartate Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001371 alpha-amino acids Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 2
- 235000009697 arginine Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 150000001868 cobalt Chemical class 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 2
- 235000014304 histidine Nutrition 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000018102 proteins Nutrition 0.000 description 2
- 102000004169 proteins and genes Human genes 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 238000001370 static light scattering Methods 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- PQHYOGIRXOKOEJ-UHFFFAOYSA-N 2-(1,2-dicarboxyethylamino)butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NC(C(O)=O)CC(O)=O PQHYOGIRXOKOEJ-UHFFFAOYSA-N 0.000 description 1
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 description 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 1
- JIDDFPFGMDDOLO-UHFFFAOYSA-N 5-fluoro-1-(1-oxothiolan-2-yl)pyrimidine-2,4-dione Chemical compound O=C1NC(=O)C(F)=CN1C1S(=O)CCC1 JIDDFPFGMDDOLO-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 230000005653 Brownian motion process Effects 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical class CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- IMQLKJBTEOYOSI-GPIVLXJGSA-N Inositol-hexakisphosphate Chemical compound OP(O)(=O)O[C@H]1[C@H](OP(O)(O)=O)[C@@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@@H]1OP(O)(O)=O IMQLKJBTEOYOSI-GPIVLXJGSA-N 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- IMQLKJBTEOYOSI-UHFFFAOYSA-N Phytic acid Natural products OP(O)(=O)OC1C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C1OP(O)(O)=O IMQLKJBTEOYOSI-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229920013808 TRITON DF-16 Polymers 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 description 1
- 239000004473 Threonine Substances 0.000 description 1
- 102000004142 Trypsin Human genes 0.000 description 1
- 108090000631 Trypsin Proteins 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001370 alpha-amino acid derivatives Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005311 autocorrelation function Methods 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000005537 brownian motion Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- HJMZMZRCABDKKV-UHFFFAOYSA-N carbonocyanidic acid Chemical compound OC(=O)C#N HJMZMZRCABDKKV-UHFFFAOYSA-N 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000000286 energy filtered transmission electron microscopy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000467 phytic acid Substances 0.000 description 1
- 235000002949 phytic acid Nutrition 0.000 description 1
- 229940068041 phytic acid Drugs 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000141 poly(maleic anhydride) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001529 polyepoxysuccinic acid Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229920006301 statistical copolymer Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 235000011044 succinic acid Nutrition 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 239000012588 trypsin Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
- C08K5/175—Amines; Quaternary ammonium compounds containing COOH-groups; Esters or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0843—Cobalt
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
(A)無機粒子と、
(B)ポリ(アミノ酸)及び/又はその塩と、
(C)少なくとも1種のアミノ酸と、
(D)少なくとも1種の酸化剤と、
(E)水性媒体と
を含み、7〜10のpHを有する、方法。
(A)各CMP組成物の総質量に対して0.01〜3質量%の総量のコロイダルシリカ粒子と、
(B)ポリ(アスパラギン酸)、ポリ(グルタミン酸)、ポリ(リジン)、アスパラギン酸−グルタミン酸コポリマー、アスパラギン酸−リジンコポリマー、若しくはグルタミン酸−リジンコポリマー、又はこれらの塩若しくは混合物からなる群から選択される、各CMP組成物の総質量に対して0.003〜0.15質量%の総量の少なくとも1種のポリ(アミノ酸)(B)と、
(C)グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はこれらの塩からなる群から選択される、各CMP組成物の総質量に対して0.2〜0.9質量%の総量の少なくとも1種のアミノ酸(C)と、
(D)各CMP組成物の総質量に対して0.2〜2質量%の総量の過酸化水素と、
(E)水性媒体と
を含み、7〜10のpHを有する、化学機械研磨(CMP)組成物が提供され、これが、本発明の目的を実現する。
− 半金属、半金属酸化物若しくは半金属炭化物を含む、金属、金属酸化物若しくは金属炭化物などの無機粒子、又は
− 無機粒子の混合物
であり得る。
− 1種類のコロイダル無機粒子
− 1種類のヒュームド無機粒子
− 異なる種類のコロイダル無機粒子及び/又はヒュームド無機粒子の混合物
であり得る。
形状係数 = 4π(面積 / 外周2)
に従って計算することができる。
真球度=(Mxx−Myy)−[4Mxy 2+(Myy−Mxx)2]0.5/(Mxx−Myy)+[4Mxy 2+(Myy−Mxx)2]0.5
伸長度 =(1/真球度)0.5
[式中、
Mxx=Σ(x−xmean)2/N
Myy=Σ(y−ymean)2/N
Mxy=Σ [(x−xmean)*(y−ymean)]/N
N 各粒子の像を形成するピクセルの数
x、y ピクセルの座標
xmean 前記粒子の像を形成するNピクセルのx座標の平均値
ymean 前記粒子の像を形成するNピクセルのy座標の平均値]
に従って計算することができる。
H2N−CR1R2COOH (I)
(式中、R1及びR2は、互いに独立して、水素、1〜8個の炭素原子を有する環状、分枝及び直鎖部分であって、非置換であるか、−COOH、−CONH2、−NH2、−S−、−OH、−SH、並びにこれらの混合物及び塩を含むがこれらに限定されない、窒素含有置換基、酸素含有置換基、及び硫黄含有置換基から選択される1種以上の置換基により置換される部分である)
によって表される。
本発明に従うCMP組成物(Q)をコバルト及び/又はコバルト合金を含む基板の研磨に使用する場合、コバルトの静的エッチング速度(SER)は、好ましくは100Å/分未満、より好ましくは80Å/分未満、最も好ましくは70Å/分未満、特に好ましくは60Å/分未満であり、例えば、静的エッチング速度は38Å/分未満であってもよい。
本発明に従うCMP組成物(Q)をコバルト及び/又はコバルト合金を含む基板の研磨に使用する場合、コバルトの材料除去速度(MRR)は、好ましくは400〜7500Å/分の範囲、より好ましくは850〜6500Å/分の範囲、最も好ましくは920〜5800Å/分の範囲、特に好ましくは980〜5500Å/分の範囲にあり、例えば、コバルト材料除去速度は1000〜5650Å/分の範囲にある。
(A)各CMP組成物の総質量に対して0.01〜1.8質量%の総量のコロイダルシリカ粒子と、
(B)各CMP組成物の総質量に対して0.008〜0.08質量%の総量のポリアスパラギン酸と、
(C)グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はこれらの塩からなる群から選択される、各CMP組成物の総質量に対して0.35〜0.8質量%の総量の少なくとも1種のアミノ酸(C)と、
(D)各CMP組成物の総質量に対して0.2〜1.5質量%の総量の過酸化水素と、
(E)水性媒体と
の、7.8〜8.9のpHを有するCMP組成物(Q)。
(A)各CMP組成物の総質量に対して0.01〜1.8質量%の総量のコロイダルシリカ粒子と、
(B)各CMP組成物の総質量に対して0.008〜0.08質量%の総量のポリアスパラギン酸ナトリウムと、
(C)グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はこれらの塩からなる群から選択される、各CMP組成物の総質量に対して0.35〜0.8質量%の総量の少なくとも1種のアミノ酸(C)と、
(D)各CMP組成物の総質量に対して0.2〜1.5質量%の総量の過酸化水素と、
(E)水性媒体と
の、7.8〜8.9のpHを有するCMP組成物(Q)。
CMP試験のための一般的手順を下記で説明する。
Strasbaugh nSpire(モデル6EC)、ViPRR浮動保持リングキャリア;
下方圧力:1.5psi;
裏面圧力:1.0psi;
保持リング圧力:1.0psi;
研磨テーブル/キャリア速度:130/127rpm;
スラリー流速:300ml/分;
研磨時間:15秒;(Co)
60秒;(Cu)
研磨パッド:Fujibo H800;
バッキングフィルム:Strasbaugh、DF200(136穴);
コンディショニングツール:Strasbaugh、軟質ブラシ、ex−situ;各ウェーハの後で、別のウェーハの次の処理のために、5lbsのダウンフォースにより2回スイープを行うことで、パッドのコンディショニングを行う。ブラシは軟質である。このことは、200回のスイープの後でも、前記ブラシが軟質研磨パッドに対して著しく高い除去速度を生じていることはないことを意味する。
Sartorius LA310 Sスケール又はNAPSON 4点プローブステーションを使用し、CMP前後でのウェーハの質量差により除去速度を決定した。
Co膜:Tiライナー上の2000 A PVD Co(供給者:AMT);
pH値は、pH複合電極(Schott、ブルーライン22pH電極)を用いて測定した。
以下のようにCo−SER実験を行った。2.5x2.5cm PVD Co(AMT製)をカットし、脱イオン水で洗浄した。4点プローブを用いて、Co膜の厚さ(d前)を測定した。0.5%のH2O2で新しく製造したスラリー400mlをビーカーに入れ、その後50℃まで加熱した。Co試験片をスラリー中に入れ、3分間スラリー中に維持した。その後、試験片を洗浄し、N2で乾燥させた。同じデバイスを用いて、Co膜の厚さ(d後)を再度測定した。以下の式によりCo−SERを決定した。
所望量のグリシンを超純水中に溶解させることにより、グリシン10質量%の水溶液を製造した。20分間撹拌した後、溶液を中和し、4.8質量%のKOH水溶液を添加することによりpHをpH8.05±0.1に調整した。濃度を調整するために、残部水を添加してもよい。所望量のポリ(アミノ酸)(B)を超純水中に溶解させ、ポリ(アミノ酸)(B)の固形物が全て溶解するまで30分間撹拌することにより、各ポリ(アミノ酸)(B)1質量%の水性原液を製造した。
平均一次粒子径(d1)が35nmであり、平均二次粒子径(d2)が70nmであり(Horiba製計測器を介して動的光散乱法を用いて測定)、比表面積約46m2/gのコロイダル繭形シリカ粒子(A1)(例えばFuso(登録商標)PL−3)を使用した。
固形物含量率20質量%の水性繭形シリカ粒子分散体を、炭素箔上で分散させ乾燥させた。エネルギーフィルター透過型電子顕微鏡(EF−TEM)(120キロボルト)及び走査型電子顕微鏡二次電子像(SEM−SE)(5キロボルト)を使用して、乾燥分散体を解析した。解像度2k、16ビット、0.6851nm/pixelのEF−TEM像(図4)を解析に使用した。雑音抑圧後に閾値を用いて、像を2進コード化した。その後、粒子を手作業で分離した。上に重なった粒子及び周辺粒子を除外し、解析に使用されないようにした。前に定義したECD、形状係数及び真球度を計算し、統計的に分類した。
Claims (14)
- (i)コバルト及び/又は(ii)コバルト合金を含む基板(S)の化学機械研磨のための化学機械研磨(CMP)組成物(Q)を使用する方法であって、CMP組成物(Q)が、
(A)無機粒子と、
(B)ポリ(アミノ酸)及び/又はその塩と、
(C)少なくとも1種のアミノ酸と、
(D)少なくとも1種の酸化剤と、
(E)水性媒体と
を含み、7〜10のpHを有する、方法。 - 無機粒子(A)がコロイダル無機粒子である、請求項1に記載のCMP組成物(Q)を使用する方法。
- コロイダル無機粒子がシリカ粒子である、請求項1又は2に記載のCMP組成物(Q)を使用する方法。
- ポリ(アミノ酸)(B)が、ポリ(アスパラギン酸)、ポリ(グルタミン酸)、ポリ(リジン)、アスパラギン酸−グルタミン酸コポリマー、アスパラギン酸−リジンコポリマー、若しくはグルタミン酸−リジンコポリマー、又はこれらの塩若しくは混合物である、請求項1から3のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- ポリ(アミノ酸)(B)が、ポリ(アスパラギン酸)及び/又はその塩である、請求項1から4のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- ポリ(アミノ酸)(B)の総量が、各CMP組成物の総質量に対して0.003〜0.1質量%の範囲にある、請求項1から5のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- 少なくとも1種のアミノ酸(C)が、グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はこれらの塩である、請求項1から6のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- 少なくとも1種のアミノ酸(C)の総量が、各CMP組成物の総質量に対して0.1〜2.25質量%の範囲にある、請求項1から7のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- 酸化剤が過酸化物を含む、請求項1から8のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- 酸化剤が過酸化水素である、請求項1から9のいずれか一項に記載のCMP組成物(Q)を使用する方法。
- 化学機械研磨(CMP)組成物(Q)であって、
(A)各CMP組成物の総質量に対して0.01〜3質量%の総量のコロイダルシリカ粒子と、
(B)ポリ(アスパラギン酸)、ポリ(グルタミン酸)、ポリ(リジン)、アスパラギン酸−グルタミン酸コポリマー、アスパラギン酸−リジンコポリマー、若しくはグルタミン酸−リジンコポリマー、又はこれらの塩若しくは混合物からなる群から選択される、各CMP組成物の総質量に対して0.003〜0.15質量%の総量の少なくとも1種のポリ(アミノ酸)(B)と、
(C)グリシン、アラニン、ロイシン、バリン、システイン、セリン及びプロリン又はこれらの塩からなる群から選択される、各CMP組成物の総質量に対して0.2〜0.9質量%の総量の少なくとも1種のアミノ酸(C)と、
(D)各CMP組成物の総質量に対して0.2〜2質量%の総量の過酸化水素と、
(E)水性媒体と
を含み、7〜10のpHを有する、CMP組成物(Q)。 - 半導体デバイスを製造するための方法であって、半導体工業において使用される基板(S)の化学機械研磨を含み、基板(S)が、請求項1から11のいずれか一項に定義されるCMP組成物(Q)の存在下で、
(i)コバルト及び/又は
(ii)コバルト合金
を含む、方法。 - コバルトの静的エッチング速度(SER)が100Å/分未満である、請求項12に記載の方法。
- コバルト材料除去速度(MRR)が300〜6000Å/分の範囲に調節される、請求項12又は13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662311656P | 2016-03-22 | 2016-03-22 | |
US62/311,656 | 2016-03-22 | ||
PCT/EP2017/055826 WO2017162462A1 (en) | 2016-03-22 | 2017-03-13 | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019516238A true JP2019516238A (ja) | 2019-06-13 |
JP7294809B2 JP7294809B2 (ja) | 2023-06-20 |
Family
ID=58266664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018550450A Active JP7294809B2 (ja) | 2016-03-22 | 2017-03-13 | コバルト及び/又はコバルト合金含有基板を研磨するための化学機械研磨(cmp)組成物を使用する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20200291267A1 (ja) |
EP (1) | EP3433327B1 (ja) |
JP (1) | JP7294809B2 (ja) |
KR (1) | KR102402730B1 (ja) |
CN (1) | CN108779367B (ja) |
SG (1) | SG11201807364VA (ja) |
TW (1) | TWI737697B (ja) |
WO (1) | WO2017162462A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023110854A (ja) * | 2022-01-28 | 2023-08-09 | 三星エスディアイ株式会社 | 銅研磨用cmpスラリー組成物およびそれを用いた銅膜研磨方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114929821B (zh) * | 2020-01-07 | 2023-12-19 | Cmc材料有限责任公司 | 经衍生的聚氨基酸 |
WO2023028197A1 (en) * | 2021-08-25 | 2023-03-02 | Cmc Materials, Inc. | Cmp composition including an anionic abrasive |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231298A (ja) * | 2008-03-19 | 2009-10-08 | Fujifilm Corp | 金属研磨用組成物、及び化学的機械的研磨方法 |
JP2012182158A (ja) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
JP2014060205A (ja) * | 2012-09-14 | 2014-04-03 | Fujimi Inc | 研磨用組成物 |
WO2014132641A1 (ja) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
WO2015114489A1 (en) * | 2014-01-31 | 2015-08-06 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) |
WO2016008896A1 (en) * | 2014-07-15 | 2016-01-21 | Basf Se | A chemical mechanical polishing (cmp) composition |
JP2016030831A (ja) * | 2014-07-25 | 2016-03-07 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | コバルト含有基板の化学的機械的研磨(cmp) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
WO2006126432A1 (ja) | 2005-05-27 | 2006-11-30 | Nissan Chemical Industries, Ltd. | シリコンウェハー用研磨組成物 |
CN101130665A (zh) | 2006-08-25 | 2008-02-27 | 安集微电子(上海)有限公司 | 用于抛光低介电材料的抛光液 |
JP2009088080A (ja) | 2007-09-28 | 2009-04-23 | Fujifilm Corp | 化学的機械的研磨用研磨液 |
CN101463227B (zh) | 2007-12-21 | 2013-06-12 | 安集微电子(上海)有限公司 | 一种用于阻挡层抛光的化学机械抛光液 |
US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
-
2017
- 2017-03-13 US US16/084,146 patent/US20200291267A1/en not_active Abandoned
- 2017-03-13 CN CN201780016852.1A patent/CN108779367B/zh active Active
- 2017-03-13 KR KR1020187026531A patent/KR102402730B1/ko active IP Right Grant
- 2017-03-13 EP EP17710271.2A patent/EP3433327B1/en active Active
- 2017-03-13 JP JP2018550450A patent/JP7294809B2/ja active Active
- 2017-03-13 SG SG11201807364VA patent/SG11201807364VA/en unknown
- 2017-03-13 WO PCT/EP2017/055826 patent/WO2017162462A1/en active Application Filing
- 2017-03-20 TW TW106109144A patent/TWI737697B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009231298A (ja) * | 2008-03-19 | 2009-10-08 | Fujifilm Corp | 金属研磨用組成物、及び化学的機械的研磨方法 |
JP2012182158A (ja) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
JP2014060205A (ja) * | 2012-09-14 | 2014-04-03 | Fujimi Inc | 研磨用組成物 |
WO2014132641A1 (ja) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
WO2015114489A1 (en) * | 2014-01-31 | 2015-08-06 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) |
WO2016008896A1 (en) * | 2014-07-15 | 2016-01-21 | Basf Se | A chemical mechanical polishing (cmp) composition |
JP2016030831A (ja) * | 2014-07-25 | 2016-03-07 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | コバルト含有基板の化学的機械的研磨(cmp) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023110854A (ja) * | 2022-01-28 | 2023-08-09 | 三星エスディアイ株式会社 | 銅研磨用cmpスラリー組成物およびそれを用いた銅膜研磨方法 |
JP7500690B2 (ja) | 2022-01-28 | 2024-06-17 | 三星エスディアイ株式会社 | 銅研磨用cmpスラリー組成物およびそれを用いた銅膜研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201803952A (zh) | 2018-02-01 |
JP7294809B2 (ja) | 2023-06-20 |
EP3433327B1 (en) | 2020-05-20 |
KR102402730B1 (ko) | 2022-05-26 |
WO2017162462A1 (en) | 2017-09-28 |
SG11201807364VA (en) | 2018-10-30 |
US20200291267A1 (en) | 2020-09-17 |
TWI737697B (zh) | 2021-09-01 |
KR20180125961A (ko) | 2018-11-26 |
EP3433327A1 (en) | 2019-01-30 |
CN108779367B (zh) | 2021-02-02 |
CN108779367A (zh) | 2018-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6817186B6 (ja) | 化学機械研磨(cmp)組成物 | |
KR102585410B1 (ko) | 코발트 및/또는 코발트 합금을 포함하는 기판의 폴리싱을 위한 화학 기계적 폴리싱 (cmp) 조성물의 용도 | |
KR102586317B1 (ko) | 코발트 및/또는 코발트 합금을 포함하는 기판의 폴리싱을 위한 화학 기계적 폴리싱 (cmp) 조성물의 사용 | |
KR102588042B1 (ko) | 코발트 및/또는 코발트 합금 포함 기판의 연마를 위한 화학적 기계적 연마 (cmp) 조성물의 용도 | |
JP7294809B2 (ja) | コバルト及び/又はコバルト合金含有基板を研磨するための化学機械研磨(cmp)組成物を使用する方法 | |
US11264250B2 (en) | Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates | |
TW201634617A (zh) | 用於硏磨含有鈷及/或鈷合金的基板的化學機械硏磨(cmp)組成物的用途 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200312 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210420 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210716 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220426 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20220426 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20220511 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20220517 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20220617 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20220621 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220927 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20221220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230215 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20230404 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230608 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7294809 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |