JP2019514058A - 投影レンズのための減衰フィルタ、投影露光装置のための減衰フィルタを有する投影レンズ、及び投影レンズを有する投影露光装置 - Google Patents
投影レンズのための減衰フィルタ、投影露光装置のための減衰フィルタを有する投影レンズ、及び投影レンズを有する投影露光装置 Download PDFInfo
- Publication number
- JP2019514058A JP2019514058A JP2018552672A JP2018552672A JP2019514058A JP 2019514058 A JP2019514058 A JP 2019514058A JP 2018552672 A JP2018552672 A JP 2018552672A JP 2018552672 A JP2018552672 A JP 2018552672A JP 2019514058 A JP2019514058 A JP 2019514058A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- projection lens
- attenuation filter
- attenuation
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 217
- 238000010521 absorption reaction Methods 0.000 claims abstract description 76
- 230000005855 radiation Effects 0.000 claims abstract description 64
- 238000009826 distribution Methods 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000001393 microlithography Methods 0.000 claims abstract description 7
- 238000012937 correction Methods 0.000 claims description 54
- 230000003287 optical effect Effects 0.000 claims description 48
- 210000001747 pupil Anatomy 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 30
- 238000005286 illumination Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 24
- 230000005540 biological transmission Effects 0.000 description 23
- 230000008859 change Effects 0.000 description 23
- 230000003667 anti-reflective effect Effects 0.000 description 17
- 238000009434 installation Methods 0.000 description 14
- 229910004261 CaF 2 Inorganic materials 0.000 description 11
- 238000013016 damping Methods 0.000 description 11
- 238000011161 development Methods 0.000 description 11
- 230000018109 developmental process Effects 0.000 description 11
- 230000001419 dependent effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000009291 secondary effect Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000036961 partial effect Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229910016036 BaF 2 Inorganic materials 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- -1 eg MgF 2 Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000005577 local transmission Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Optical Filters (AREA)
- Projection-Type Copiers In General (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
Claims (15)
- マイクロリソグラフィ投影露光装置(WSC)の投影レンズ(PO、PO’)内の指定可能な局所分布に従った150nmから370nmまでの波長範囲から指定された作動波長を有する紫外線(LR1I、LR2I)の強度の定められた減衰のための減衰フィルタ(AF、AF’、AF1、AF2、AF3)であって、
前記作動波長で十分に透過性のある基板(SU、SU’)と、
前記基板上に配置され、かつ使用区域(UA)の異なる場所(Z1、Z2)での前記指定可能な局所分布に従って前記作動波長の入射紫外線を様々な程度まで吸収する吸収層(AL)とを含み、
前記減衰フィルタ(AF、AF’、AF1、AF2、AF3)は、前記基板にわたって局所的に変化する前記紫外線(LR1I、LR2I)の前記吸収によって引き起こされる該基板(SU、SU’)の局所変動加熱に起因する該減衰フィルタを通過した前記紫外線(LR10、LR20)内の熱誘導波面変動誤差を低減又は回避するように構成され、該基板の厚み(TS、TS’)は100μmよりも小さい、
ことを特徴とする減衰フィルタ(AF、AF’、AF1、AF2、AF3)。 - 前記基板(SU、SU’)の前記厚み(TS、TS’)は、最大で20μm、好ましくは最大で10μmであることを特徴とする請求項1に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記基板(SU、SU’)の厚み(TS、TS’)は、少なくとも5μmであることを特徴とする請求項1又は請求項2に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記基板(SU、SU’)は、寸法的に安定であることを特徴とする請求項1から請求項3のいずれか1項に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記基板(SU)は、該基板にわたって局所的に変化する吸収率に適応された局所的に変化する厚み(TS)を有することを特徴とする請求項1から請求項4のいずれか1項に記載の減衰フィルタ(AF、AF1、AF2、AF3)。
- 前記基板(SU’)上に配置された波面補正層(CL)と、前記指定された作動波長で1よりも大きい屈折率を有する補正層材料と、該基板にわたって局所的に変化する吸収率に適応された局所的に変化する補正層厚み(TC)とによって特徴付けられる、請求項1から請求項5のいずれか1項に記載の減衰フィルタ(AF’、AF1、AF2、AF3)。
- 前記吸収層(AL)は、前記指定された作動波長の前記入射紫外線(LR1I、LR2I)を吸収する吸収層材料と、前記指定可能な局所分布に従って前記基板(SU、SU’)にわたって局所的に変化する吸収層厚み(TA)とを有することを特徴とする請求項1から請求項6のいずれか1項に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記吸収層(AL)は、金属、炭化物、及び/又は金属酸化物で部分的に又は完全に構成されることを特徴とする請求項1から請求項7のいずれか1項に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記吸収層(AL)は、五酸化タンタル(Ta2O5)、酸化ハフニウム(HfO2)、及び/又は酸化アルミニウム(Al2O3)で部分的に又は完全に構成されることを特徴とする請求項1から請求項8のいずれか1項に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記基板(SU、SU’)は、合成石英ガラス(SiO2)又は結晶フッ化物で部分的に又は完全に構成されることを特徴とする請求項1から請求項9のいずれか1項に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 前記吸収層(AL)は、前記指定された作動波長の入射紫外線(LR1I、LR2I)を前記使用区域(UA)の中心(Z2)で該使用区域の周囲領域(Z1)よりも強く吸収することを特徴とする請求項1から請求項10のいずれか1項に記載の減衰フィルタ(AF、AF’、AF1、AF2、AF3)。
- 150nmから370nmまでの波長範囲からの作動波長を有する紫外線を用いて投影レンズの物体平面(OS)に配置されたパターンを該投影レンズの像平面(IS)の中に結像するためのマイクロリソグラフィ投影露光装置(WSC)に使用するための投影レンズ(PO、PO’)であって、
前記物体平面と前記像平面の間に配置された多数の光学要素(L、L1、L2、L3、L4、L5、L6)と、
前記物体平面と前記像平面の間の投影ビーム経路に作動中に配置される請求項1から請求項11のいずれか1項に記載の少なくとも1つの減衰フィルタ(AF、AF’、AF1、AF2、AF3)と、
を含む投影レンズ(PO、PO’)。 - 前記物体平面(OS)及び前記像平面(IS)に光学的にフーリエ変換された少なくとも1つの瞳平面(PS、PS1、PS2)が、該物体平面と該像平面の間で前記投影レンズ内に位置付けられ、
前記減衰フィルタ(AF、AF1、AF3)は、前記瞳平面に又は該瞳平面の近くに配置される、
ことを特徴とする請求項12に記載の投影レンズ(PO、PO’)。 - 前記減衰フィルタ(AF、AF’、AF1、AF2、AF3)は、構造的に交換可能な減衰フィルタとして構成されることを特徴とする請求項12又は請求項13に記載の投影レンズ(PO、PO’)。
- 投影レンズの物体平面(OS)に配置されたマスク(M)のパターンの少なくとも1つの像により、露光すべきかつ該投影レンズ(PO、PO’)の像平面(IS)の領域に配置された基板(W)を露光するための投影露光装置(WSC)であって、
紫外線源(LS)の150nmから370nmまでの波長範囲から指定された作動波長を有する紫外線を受け取り、かつ前記パターンの上に向けられる照明放射線を成形するための照明系(ILL)と、
前記パターンをウェーハの上に結像するための投影レンズと、
を含み、
前記投影レンズ(PO、PO’)は、請求項12から請求項14のいずれか1項に従って構成される、ことを特徴とする投影露光装置(WSC)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016205619.0 | 2016-04-05 | ||
DE102016205619.0A DE102016205619A1 (de) | 2016-04-05 | 2016-04-05 | Abschwächungsfilter für Projektionsobjektiv, Projektionsobjektiv mit Abschwächungsfilter für Projektionsbelichtungsanlage und Projektionsbelichtungsanlage mit Projektionsobjektiv |
PCT/EP2017/056909 WO2017174366A1 (en) | 2016-04-05 | 2017-03-23 | Attenuation filter for projection lens, projection lens having attenuation filter for projection exposure apparatus, and projection exposure apparatus having projection lens |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019514058A true JP2019514058A (ja) | 2019-05-30 |
JP7003055B2 JP7003055B2 (ja) | 2022-01-20 |
Family
ID=58401582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018552672A Active JP7003055B2 (ja) | 2016-04-05 | 2017-03-23 | 投影レンズのための減衰フィルタ、投影露光装置のための減衰フィルタを有する投影レンズ、及び投影レンズを有する投影露光装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10416569B2 (ja) |
EP (1) | EP3440512B1 (ja) |
JP (1) | JP7003055B2 (ja) |
KR (1) | KR102393668B1 (ja) |
CN (1) | CN109073983B (ja) |
DE (1) | DE102016205619A1 (ja) |
TW (1) | TWI781927B (ja) |
WO (1) | WO2017174366A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10600213B2 (en) * | 2016-02-27 | 2020-03-24 | Focal Sharp, Inc. | Method and apparatus for color-preserving spectrum reshape |
EP3611569A1 (en) * | 2018-08-16 | 2020-02-19 | ASML Netherlands B.V. | Metrology apparatus and photonic crystal fiber |
DE102020208044A1 (de) * | 2020-06-29 | 2021-12-30 | Carl Zeiss Smt Gmbh | Optisches Element für den VUV-Wellenlängenbereich, optische Anordnung und Verfahren zum Herstellen eines optischen Elements |
CN112269268B (zh) * | 2020-10-12 | 2022-07-15 | 中国科学院福建物质结构研究所 | 软边光阑和制备时使用的镀膜挡板 |
CN114153049B (zh) * | 2021-12-06 | 2023-06-13 | 杭州径上科技有限公司 | 一种定焦防辐射镜头 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003050311A (ja) * | 2001-05-22 | 2003-02-21 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | 紫外線用の減衰フィルタ |
JP2007311788A (ja) * | 2006-05-18 | 2007-11-29 | Carl Zeiss Smt Ag | 光近接効果を補正する方法 |
JP2009124143A (ja) * | 2007-11-13 | 2009-06-04 | Asml Holding Nv | 薄いフィルム状の連続的に空間的に調整された灰色減衰器及び灰色フィルタ |
JP2012531730A (ja) * | 2009-06-30 | 2012-12-10 | エーエスエムエル ネザーランズ ビー.ブイ. | スペクトル純度フィルタ、リソグラフィ装置、及びスペクトル純度フィルタを製造する方法 |
WO2015091899A1 (de) * | 2013-12-20 | 2015-06-25 | Schott Ag | Optischer filter |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950004968B1 (ko) * | 1991-10-15 | 1995-05-16 | 가부시키가이샤 도시바 | 투영노광 장치 |
US6404482B1 (en) * | 1992-10-01 | 2002-06-11 | Nikon Corporation | Projection exposure method and apparatus |
US7934172B2 (en) * | 2005-08-08 | 2011-04-26 | Micronic Laser Systems Ab | SLM lithography: printing to below K1=.30 without previous OPC processing |
DE102007021649A1 (de) | 2006-05-18 | 2007-11-22 | Carl Zeiss Smt Ag | Verfahren zur Korrektur von optischen Umgebungseffekten, optisches Filter und Verfahren zur Herstellung eines optischen Filters |
US8901229B2 (en) * | 2006-05-26 | 2014-12-02 | Polymer Recycling, Llc | Roof coating containing paint and method of making |
EP2048540A1 (en) * | 2007-10-09 | 2009-04-15 | Carl Zeiss SMT AG | Microlithographic projection exposure apparatus |
DE102008001511A1 (de) * | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
KR20130100152A (ko) * | 2010-09-30 | 2013-09-09 | 가부시키가이샤 니콘 | 투영 광학계, 투영 광학계의 조정 방법, 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
DE102013204391B3 (de) | 2013-03-13 | 2014-05-28 | Carl Zeiss Smt Gmbh | Projektionsobjektiv mit Wellenfrontmanipulator |
KR102102020B1 (ko) * | 2013-08-09 | 2020-04-17 | 케이엘에이 코포레이션 | 향상된 검출 감도를 위한 멀티 스팟 조명 |
-
2016
- 2016-04-05 DE DE102016205619.0A patent/DE102016205619A1/de not_active Ceased
-
2017
- 2017-03-23 EP EP17712995.4A patent/EP3440512B1/en active Active
- 2017-03-23 JP JP2018552672A patent/JP7003055B2/ja active Active
- 2017-03-23 WO PCT/EP2017/056909 patent/WO2017174366A1/en active Application Filing
- 2017-03-23 KR KR1020187031471A patent/KR102393668B1/ko active IP Right Grant
- 2017-03-23 CN CN201780018875.6A patent/CN109073983B/zh active Active
- 2017-03-31 TW TW106111062A patent/TWI781927B/zh active
-
2018
- 2018-09-14 US US16/131,326 patent/US10416569B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003050311A (ja) * | 2001-05-22 | 2003-02-21 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | 紫外線用の減衰フィルタ |
JP2007311788A (ja) * | 2006-05-18 | 2007-11-29 | Carl Zeiss Smt Ag | 光近接効果を補正する方法 |
JP2009124143A (ja) * | 2007-11-13 | 2009-06-04 | Asml Holding Nv | 薄いフィルム状の連続的に空間的に調整された灰色減衰器及び灰色フィルタ |
JP2012531730A (ja) * | 2009-06-30 | 2012-12-10 | エーエスエムエル ネザーランズ ビー.ブイ. | スペクトル純度フィルタ、リソグラフィ装置、及びスペクトル純度フィルタを製造する方法 |
WO2015091899A1 (de) * | 2013-12-20 | 2015-06-25 | Schott Ag | Optischer filter |
US20160291223A1 (en) * | 2013-12-20 | 2016-10-06 | Schott Ag | Optical filter |
Also Published As
Publication number | Publication date |
---|---|
EP3440512A1 (en) | 2019-02-13 |
TW201800874A (zh) | 2018-01-01 |
DE102016205619A1 (de) | 2017-10-05 |
KR102393668B1 (ko) | 2022-05-03 |
TWI781927B (zh) | 2022-11-01 |
CN109073983A (zh) | 2018-12-21 |
EP3440512B1 (en) | 2020-04-29 |
KR20180132764A (ko) | 2018-12-12 |
US10416569B2 (en) | 2019-09-17 |
WO2017174366A1 (en) | 2017-10-12 |
CN109073983B (zh) | 2021-07-27 |
US20190064676A1 (en) | 2019-02-28 |
JP7003055B2 (ja) | 2022-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7003055B2 (ja) | 投影レンズのための減衰フィルタ、投影露光装置のための減衰フィルタを有する投影レンズ、及び投影レンズを有する投影露光装置 | |
JP5487110B2 (ja) | マイクロリソグラフィ投影露光装置 | |
US10001709B2 (en) | Lithographic apparatus, spectral purity filter and device manufacturing method | |
US7864296B2 (en) | Exposure apparatus, setting method, and exposure method having the same | |
JP5156056B2 (ja) | リソグラフィ装置並びに照明均一性補正及び均一性ドリフト補償の方法 | |
TWI802572B (zh) | 校正方法 | |
TWI724186B (zh) | 罩幕結構與罩幕製程方法 | |
US6972836B2 (en) | Measuring method of illuminance unevenness of exposure apparatus, correcting method of illuminance unevenness, manufacturing method of semiconductor device, and exposure apparatus | |
US20090059189A1 (en) | Pellicle for use in a microlithographic exposure apparatus | |
JPH1064790A (ja) | 投影露光装置 | |
TW201510674A (zh) | 微影設備及改變光輻射分佈的方法 | |
JP2001264626A (ja) | 回折光学素子を有する光学系 | |
JP3958261B2 (ja) | 光学系の調整方法 | |
KR100689836B1 (ko) | 보조 포토 마스크를 갖는 노광장비 및 이를 이용하는노광방법 | |
US10126660B2 (en) | Multilayer film reflector, method of manufacturing multilayer film reflector, projection optical system, exposure apparatus, and method of manufacturing device | |
TWI595308B (zh) | 光微影方法與系統 | |
JP4867712B2 (ja) | 露光装置、デバイス製造方法、及び露光方法 | |
TWI536113B (zh) | Projection optical system and projection exposure device | |
JP4307039B2 (ja) | 照明装置、露光装置及びデバイス製造方法 | |
JP2004134444A (ja) | 極短紫外線光学系の光学特性測定方法及び装置、並びに極短紫外線光学系の製造方法 | |
NL2006604A (en) | Lithographic apparatus, spectral purity filter and device manufacturing method. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20190123 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200323 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210427 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210622 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211102 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20211201 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211228 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7003055 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |