JP2019510374A - マイクロセンサを有するウエハ処理ツール - Google Patents
マイクロセンサを有するウエハ処理ツール Download PDFInfo
- Publication number
- JP2019510374A JP2019510374A JP2018547946A JP2018547946A JP2019510374A JP 2019510374 A JP2019510374 A JP 2019510374A JP 2018547946 A JP2018547946 A JP 2018547946A JP 2018547946 A JP2018547946 A JP 2018547946A JP 2019510374 A JP2019510374 A JP 2019510374A
- Authority
- JP
- Japan
- Prior art keywords
- microsensor
- wafer
- wafer processing
- chamber
- parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 claims abstract description 154
- 230000008569 process Effects 0.000 claims abstract description 127
- 239000000463 material Substances 0.000 claims abstract description 108
- 238000004519 manufacturing process Methods 0.000 claims abstract description 79
- 230000008021 deposition Effects 0.000 claims abstract description 53
- 230000008859 change Effects 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 29
- 230000004044 response Effects 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 205
- 238000005259 measurement Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 241001634884 Cochlicopa lubricella Species 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000003380 quartz crystal microbalance Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本願は、本書で参照することによって全内容が以下に組み込まれる、2016年3月11日出願の米国特許仮出願第15/068464号の優先権を主張するものである。
Claims (15)
- ウエハ処理ツールであって、
チャンバ領域を有するプロセスチャンバと、
前記プロセスチャンバの前記チャンバ領域内の所定の位置に装着されたマイクロセンサと
を備え、前記マイクロセンサは1つのパラメータを有し、且つセンサ表面を含み、前記パラメータは、前記センサ表面に材料が堆積されたとき、あるいは前記センサ表面から除去されたときに変化する、ウエハ処理ツール。 - 前記プロセスチャンバは、前記チャンバ領域の周りにチャンバ壁を含み、前記チャンバ壁に前記マイクロセンサが装着される、請求項1に記載のウエハ処理ツール。
- 前記プロセスチャンバは保持面を有するウエハホルダを含み、前記保持面に前記マイクロセンサが装着される、請求項1に記載のウエハ処理ツール。
- 前記チャンバ領域は半導体材料のウエハを受容するようにサイズ設定され、前記センサ表面は前記半導体材料を含み、前記センサ表面に堆積される前記材料又は前記センサ表面から除去される前記材料は前記半導体材料である、請求項1に記載のウエハ処理ツール。
- 前記マイクロセンサはマイクロ共振器を含み、前記パラメータは前記マイクロ共振器の特性周波数であり、前記特性周波数は前記センサ表面に前記材料が堆積されたこと、あるいは前記センサ表面から前記材料が除去されたことに応じてシフトする、請求項1に記載のウエハ処理ツール。
- ウエハ処理システムであって、
ウエハ処理ツールであって、
チャンバ領域を有するプロセスチャンバと、
前記プロセスチャンバの前記チャンバ領域内の所定の位置に装着されたマイクロセンサと
を備え、前記マイクロセンサは1つのパラメータを有し、且つセンサ表面を含み、前記パラメータは、前記センサ表面に材料が堆積されたとき、あるいは前記センサ表面から除去されたときに変化する、ウエハ処理ツールと、
前記ウエハ処理ツールに通信可能に結合されたコンピュータシステムと
を備える、ウエハ処理システム。 - 前記マイクロセンサはマイクロ共振器を含み、前記パラメータは前記マイクロ共振器の特性周波数であり、前記特性周波数は前記センサ表面に前記材料が堆積されたこと、あるいは前記センサ表面から前記材料が除去されたことに応じてシフトする、請求項6に記載のウエハ処理システム。
- 前記コンピュータシステムは、前記マイクロセンサから前記マイクロセンサの前記パラメータに対応する入力信号を受信し、前記入力信号に基づいて前記ウエハ処理ツールによって実施されるウエハ製造プロセスの終点を決定する、請求項6に記載のウエハ処理システム。
- 前記ウエハ処理ツールは、前記プロセスチャンバのチャンバ領域内の第2の所定の位置に装着された第2のマイクロセンサを含み、前記コンピュータシステムは、前記第2のマイクロセンサから前記第2のマイクロセンサの第2のパラメータに対応する第2の入力信号を受信し、前記コンピュータシステムは、入力信号と前記第2の入力信号とに基づいて、ウエハ製造プロセスの均一性を決定する、請求項6に記載のウエハ処理システム。
- 前記ウエハ処理ツールは、前記チャンバ領域の光学発光の分光分析シグネチャを検出する光学分光計を含み、前記コンピュータシステムは、前記マイクロセンサと前記光学分光計から前記マイクロセンサの前記パラメータ及び前記光学発光の分光分析シグネチャに対応する入力信号を受信し、前記光学発光の分光分析シグネチャに基づいて前記マイクロセンサの前記パラメータの変化の根本原因を決定する、請求項6に記載のウエハ処理システム。
- 方法であって、
ウエハ処理ツールのプロセスチャンバの中に半導体材料のウエハをロードすることであって、前記プロセスチャンバは、チャンバ領域と、前記プロセスチャンバの前記チャンバ領域内の所定の位置に装着されたマイクロセンサとを含み、前記マイクロセンサは、1つのパラメータを有し、且つセンサ表面を含み、前記パラメータは、前記半導体材料が前記センサ表面に堆積されたときに、あるいは前記半導体材料が前記センサ表面から除去されたときに変化する、ロードすることと、
前記プロセスチャンバ内でウエハ製造プロセスを開始することであって、前記半導体材料は、ウエハ製造プロセス中に、前記ウエハ及び前記センサ表面に堆積される、又は前記ウエハ及び前記センサ表面から除去される、ウエハ製造プロセスを開始することと、
前記センサ表面への前記半導体材料の堆積、又は前記センサ表面からの前記半導体材料の除去に応じて、前記マイクロセンサの前記パラメータの変化を検出することと
を含む方法。 - 前記パラメータの変化を検出することは、マイクロ共振器の特性周波数のシフトを検出することを含む、請求項11に記載の方法。
- 前記マイクロセンサの前記パラメータの変化に基づいて、前記ウエハ製造プロセスの終点を決定することと、
前記終点が決定されたことに応じて、前記ウエハ製造プロセスを停止することと
を更に含む、請求項11に記載の方法。 - 前記ウエハ処理ツールが、前記プロセスチャンバの前記チャンバ領域内の第2の所定の位置に装着された第2のマイクロセンサを含み、
第2のセンサ表面への前記半導体材料の堆積、又は前記第2のセンサ表面からの前記半導体材料の除去に応じて、前記第2のマイクロセンサの第2のパラメータの第2の変化を検出することと、
前記マイクロセンサの前記パラメータの変化、及び前記第2のマイクロセンサの前記第2のパラメータの前記第2の変化に基づいて、前記ウエハ製造プロセスの均一性を決定することと
を更に含む、請求項11に記載の方法。 - 測定機器によって前記ウエハ製造プロセスのプロセスパラメータを検出することと、
検出された前記プロセスパラメータに基づいて、前記マイクロセンサの前記パラメータの変化の根本原因を決定することと
を更に含む、請求項11に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021177315A JP7288493B2 (ja) | 2016-03-11 | 2021-10-29 | マイクロセンサを有するウエハ処理ツール |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/068,464 US10818564B2 (en) | 2016-03-11 | 2016-03-11 | Wafer processing tool having a micro sensor |
US15/068,464 | 2016-03-11 | ||
PCT/US2017/014176 WO2017155612A1 (en) | 2016-03-11 | 2017-01-19 | Wafer processing tool having a micro sensor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021177315A Division JP7288493B2 (ja) | 2016-03-11 | 2021-10-29 | マイクロセンサを有するウエハ処理ツール |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019510374A true JP2019510374A (ja) | 2019-04-11 |
Family
ID=59788118
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018547946A Pending JP2019510374A (ja) | 2016-03-11 | 2017-01-19 | マイクロセンサを有するウエハ処理ツール |
JP2021177315A Active JP7288493B2 (ja) | 2016-03-11 | 2021-10-29 | マイクロセンサを有するウエハ処理ツール |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021177315A Active JP7288493B2 (ja) | 2016-03-11 | 2021-10-29 | マイクロセンサを有するウエハ処理ツール |
Country Status (6)
Country | Link |
---|---|
US (2) | US10818564B2 (ja) |
JP (2) | JP2019510374A (ja) |
KR (1) | KR20180116445A (ja) |
CN (2) | CN117558655A (ja) |
TW (2) | TWI799886B (ja) |
WO (1) | WO2017155612A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022157908A1 (ja) * | 2021-01-22 | 2022-07-28 | 株式会社日立ハイテク | イオンミリング装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10685819B2 (en) * | 2017-05-25 | 2020-06-16 | Applied Materials, Inc. | Measuring concentrations of radicals in semiconductor processing |
US10901021B2 (en) | 2018-02-27 | 2021-01-26 | Applied Materials, Inc. | Method for detecting wafer processing parameters with micro resonator array sensors |
JP2020119929A (ja) | 2019-01-21 | 2020-08-06 | キオクシア株式会社 | 半導体装置 |
KR20230143349A (ko) * | 2022-04-05 | 2023-10-12 | 한국기계연구원 | 패치형 플라즈마 진단장치 및 이를 포함하는 플라즈마 진단모듈 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355535U (ja) * | 1986-09-29 | 1988-04-14 | ||
JPS6466937A (en) * | 1987-09-07 | 1989-03-13 | Sumitomo Electric Industries | On-site measurement of quantity of etching in rie device |
JP2004241706A (ja) * | 2003-02-07 | 2004-08-26 | Tokyo Electron Ltd | 半導体製造装置 |
JP2006344745A (ja) * | 2005-06-08 | 2006-12-21 | Tdk Corp | エッチング量計測装置、エッチング装置及びエッチング量計測方法 |
WO2009038085A1 (ja) * | 2007-09-21 | 2009-03-26 | Ulvac, Inc. | 薄膜形成装置、膜厚測定方法、膜厚センサー |
WO2010038631A1 (ja) * | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 蒸着装置、蒸着方法およびプログラムを記憶した記憶媒体 |
JP2012046780A (ja) * | 2010-08-25 | 2012-03-08 | Tokyo Electron Ltd | 蒸着処理装置および蒸着処理方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355535A (ja) | 1986-08-26 | 1988-03-10 | Minolta Camera Co Ltd | 原稿露光装置 |
JP3752464B2 (ja) * | 1991-04-04 | 2006-03-08 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5405488A (en) * | 1993-09-13 | 1995-04-11 | Vlsi Technology, Inc. | System and method for plasma etching endpoint detection |
US6165312A (en) * | 1998-04-23 | 2000-12-26 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
US20020018217A1 (en) * | 2000-08-11 | 2002-02-14 | Michael Weber-Grabau | Optical critical dimension metrology system integrated into semiconductor wafer process tool |
JP4232336B2 (ja) * | 2000-11-22 | 2009-03-04 | 株式会社デンソー | 半導体ウエハの表面処理方法 |
US6654659B1 (en) * | 2002-06-24 | 2003-11-25 | Advanced Micro Drvices, Inc. | Quartz crystal monitor wafer for lithography and etch process monitoring |
US7128803B2 (en) * | 2002-06-28 | 2006-10-31 | Lam Research Corporation | Integration of sensor based metrology into semiconductor processing tools |
US6939433B2 (en) * | 2002-08-27 | 2005-09-06 | Hitachi High-Technologies Corporation | Sample processing apparatus and sample processing system |
US7361599B2 (en) * | 2002-09-03 | 2008-04-22 | Texas Instruments Incorporated | Integrated circuit and method |
JP3966168B2 (ja) * | 2002-11-20 | 2007-08-29 | 松下電器産業株式会社 | 半導体装置の製造方法 |
KR20040053592A (ko) | 2002-12-17 | 2004-06-24 | 삼성전자주식회사 | 싱글 타입의 감시/제어용 증착 시스템 |
US6894491B2 (en) * | 2002-12-23 | 2005-05-17 | Lam Research Corporation | Method and apparatus for metrological process control implementing complementary sensors |
JP2007517413A (ja) * | 2003-12-30 | 2007-06-28 | アクリオン・エルエルシー | 基板処理中の窒化ケイ素の選択エッチングのための装置及び方法 |
JP3868427B2 (ja) * | 2004-02-23 | 2007-01-17 | 株式会社半導体理工学研究センター | プラズマプロセスのリアルタイムモニタ装置 |
US7052364B2 (en) * | 2004-06-14 | 2006-05-30 | Cabot Microelectronics Corporation | Real time polishing process monitoring |
US7622392B2 (en) * | 2005-02-18 | 2009-11-24 | Tokyo Electron Limited | Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methods |
US20060211253A1 (en) * | 2005-03-16 | 2006-09-21 | Ing-Shin Chen | Method and apparatus for monitoring plasma conditions in an etching plasma processing facility |
US8823933B2 (en) * | 2006-09-29 | 2014-09-02 | Cyberoptics Corporation | Substrate-like particle sensor |
US7976671B2 (en) * | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
CN101730853B (zh) * | 2007-06-04 | 2012-12-05 | 卧龙岗大学 | 辐射传感器和剂量仪 |
JP5643198B2 (ja) * | 2008-07-07 | 2014-12-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバ内の膜を特徴付けるためのrfバイアス容量結合静電(rfb−cce)プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 |
US20100219494A1 (en) * | 2009-03-02 | 2010-09-02 | Barnaby Hugh J | Sub-mm Wireless Ionizing Radiation Detector |
US8954184B2 (en) | 2011-01-19 | 2015-02-10 | Tokyo Electron Limited | Tool performance by linking spectroscopic information with tool operational parameters and material measurement information |
KR101340425B1 (ko) | 2012-05-15 | 2013-12-10 | (주)베오스솔루션 | 박막 증착 장치 및 방법 |
US8421521B1 (en) | 2012-06-29 | 2013-04-16 | International Business Machines Corporation | Chemical detection with MOSFET sensor |
KR102107105B1 (ko) | 2012-12-13 | 2020-05-07 | 삼성디스플레이 주식회사 | 증착율 측정센서의 교체 기구가 개선된 증착 장치 및 그것을 이용한 증착율 측정센서의 교체 방법 |
JP6653255B2 (ja) * | 2013-12-22 | 2020-02-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積用監視システム及びその操作方法 |
CN106232858A (zh) | 2014-05-26 | 2016-12-14 | 株式会社爱发科 | 成膜装置、有机膜的膜厚测量方法以及有机膜用膜厚传感器 |
-
2016
- 2016-03-11 US US15/068,464 patent/US10818564B2/en active Active
-
2017
- 2017-01-19 CN CN202311521111.2A patent/CN117558655A/zh active Pending
- 2017-01-19 KR KR1020187029263A patent/KR20180116445A/ko not_active Application Discontinuation
- 2017-01-19 JP JP2018547946A patent/JP2019510374A/ja active Pending
- 2017-01-19 WO PCT/US2017/014176 patent/WO2017155612A1/en active Application Filing
- 2017-01-19 CN CN201780016331.6A patent/CN108780765B/zh active Active
- 2017-01-23 TW TW110120725A patent/TWI799886B/zh active
- 2017-01-23 TW TW106102359A patent/TWI731922B/zh active
-
2020
- 2020-09-18 US US17/026,025 patent/US11348846B2/en active Active
-
2021
- 2021-10-29 JP JP2021177315A patent/JP7288493B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355535U (ja) * | 1986-09-29 | 1988-04-14 | ||
JPS6466937A (en) * | 1987-09-07 | 1989-03-13 | Sumitomo Electric Industries | On-site measurement of quantity of etching in rie device |
JP2004241706A (ja) * | 2003-02-07 | 2004-08-26 | Tokyo Electron Ltd | 半導体製造装置 |
JP2006344745A (ja) * | 2005-06-08 | 2006-12-21 | Tdk Corp | エッチング量計測装置、エッチング装置及びエッチング量計測方法 |
WO2009038085A1 (ja) * | 2007-09-21 | 2009-03-26 | Ulvac, Inc. | 薄膜形成装置、膜厚測定方法、膜厚センサー |
WO2010038631A1 (ja) * | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 蒸着装置、蒸着方法およびプログラムを記憶した記憶媒体 |
JP2012046780A (ja) * | 2010-08-25 | 2012-03-08 | Tokyo Electron Ltd | 蒸着処理装置および蒸着処理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022157908A1 (ja) * | 2021-01-22 | 2022-07-28 | 株式会社日立ハイテク | イオンミリング装置 |
TWI821868B (zh) * | 2021-01-22 | 2023-11-11 | 日商日立全球先端科技股份有限公司 | 離子銑削裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN117558655A (zh) | 2024-02-13 |
WO2017155612A1 (en) | 2017-09-14 |
US11348846B2 (en) | 2022-05-31 |
JP2022020718A (ja) | 2022-02-01 |
US20170263511A1 (en) | 2017-09-14 |
TWI799886B (zh) | 2023-04-21 |
TW202141661A (zh) | 2021-11-01 |
KR20180116445A (ko) | 2018-10-24 |
JP7288493B2 (ja) | 2023-06-07 |
TWI731922B (zh) | 2021-07-01 |
CN108780765A (zh) | 2018-11-09 |
CN108780765B (zh) | 2023-11-24 |
TW201801213A (zh) | 2018-01-01 |
US20210005521A1 (en) | 2021-01-07 |
US10818564B2 (en) | 2020-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102439729B1 (ko) | 용량성 마이크로 센서들을 갖는 웨이퍼 처리 장비 | |
JP7288493B2 (ja) | マイクロセンサを有するウエハ処理ツール | |
US10718719B2 (en) | Particle monitoring device | |
JP7170099B2 (ja) | リアルタイムのプロセス評価 | |
US9725302B1 (en) | Wafer processing equipment having exposable sensing layers | |
KR102365024B1 (ko) | 모니터링 디바이스를 갖는 처리 툴 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200114 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210114 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210126 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210420 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210629 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20211029 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220419 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20220614 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20220712 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20220712 |