JP2019501029A - Mems無線周波数アプリケーションのesd保護 - Google Patents
Mems無線周波数アプリケーションのesd保護 Download PDFInfo
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- JP2019501029A JP2019501029A JP2018525395A JP2018525395A JP2019501029A JP 2019501029 A JP2019501029 A JP 2019501029A JP 2018525395 A JP2018525395 A JP 2018525395A JP 2018525395 A JP2018525395 A JP 2018525395A JP 2019501029 A JP2019501029 A JP 2019501029A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000007667 floating Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000003780 insertion Methods 0.000 abstract description 5
- 230000037431 insertion Effects 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 22
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910019899 RuO Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/99—Microstructural systems or auxiliary parts thereof not provided for in B81B2207/01 - B81B2207/115
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2239/00—Miscellaneous
- H01H2239/008—Static electricity considerations
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
を含む、デバイス。
Claims (13)
- 共通のRF電極と並列して接続する複数のMEMSデバイスであって、RF電極と接地との間に電気的に配置される、複数のMEMSデバイスと、及び、
RF電極と接地との間に、複数のMEMSデバイスと並列して結合する第1のESDデバイスと
を含む、デバイス。 - 共通の第1のRF電極と並列して接続する複数のMEMSデバイスであって、第1のRF電極と第2のRF電極との間に電気的に配置される、複数のMEMSデバイスと、及び、
第2のRF電極と接地との間に結合する第1のESDデバイスと
を含む、デバイス。 - 第1のRF電極と第2のRF電極との間に、複数のMEMSデバイスと並列して結合する第2のESDデバイスを、更に含む、請求項2に記載のデバイス。
- 接地と第1のRF電極との間に接続する第3のESDデバイスを、更に含む、請求項3に記載のデバイス。
- 接地と第1のRF電極との間に接続する第2のESDデバイスを、更に含む、請求項2に記載のデバイス。
- 第1のRF電極と並列して接続する複数のMEMSデバイスであって、個々のMEMSデバイスは対応する第2の電極を有する、複数のMEMSデバイスと、及び、
第1のRF電極と接地との間に結合するESDデバイスと
を含む、デバイス。 - 個々のMEMSデバイスは、第1のRF電極と対応する第2のRF電極との間に並列して結合する第2のESDデバイスを含む、請求項6に記載のデバイス。
- 個々のMEMSデバイスは、第2のRF電極と接地との間に結合する第3のESDデバイスを含む、請求項7に記載のデバイス。
- 個々のMEMSデバイスは、第2のRF電極と接地との間に結合する第2のESDデバイスを含む、請求項6に記載のデバイス。
- SOI半導体のダイと、
前記ダイと結合する複数の対の接続パッドと、及び、
各々の対の接続パッドにおける接続パッド間に結合するESDデバイスと
を含む、デバイス。 - SOI半導体のダイと、
前記ダイと結合する複数の対の接続パッドと、
前記ダイと結合するフローティング共通ノードと、及び、
各々の接続パッドとフローティング共通ノードと間に結合するESDデバイスと
を含む、デバイス。 - 第1のRF電極と第2のRF電極との間に並列して結合する複数のMEMSデバイスと、
第1のRF電極と接地との間に結合する第1のESDデバイスと、及び、
第2のRF電極と接地との間に結合する第2のESDデバイスと
を含む、デバイス。 - 第1のRF電極と、
複数の第2のRF電極であって、スイッチが個々の第2のRF電極と第1のRF電極との間に存在する、複数の第2のRF電極と、
個々の第2のRF電極と個々のスイッチとの間に結合する第1のESDデバイスと、
個々のスイッチと第1のRF電極との間に結合する第2のESDデバイスと、及び、
接地と個々の第1のESDデバイスと第2のESDデバイスとの間に結合する第3のESDデバイスと
を含む、デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562256026P | 2015-11-16 | 2015-11-16 | |
US62/256,026 | 2015-11-16 | ||
PCT/US2016/061933 WO2017087338A1 (en) | 2015-11-16 | 2016-11-14 | Esd protection of mems rf applications |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019501029A true JP2019501029A (ja) | 2019-01-17 |
JP6873127B2 JP6873127B2 (ja) | 2021-05-19 |
Family
ID=57421968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018525395A Active JP6873127B2 (ja) | 2015-11-16 | 2016-11-14 | Mems無線周波数アプリケーションのesd保護 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11476245B2 (ja) |
EP (1) | EP3378079A1 (ja) |
JP (1) | JP6873127B2 (ja) |
KR (1) | KR20180083906A (ja) |
CN (1) | CN108352263A (ja) |
WO (1) | WO2017087338A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11746002B2 (en) | 2019-06-22 | 2023-09-05 | Qorvo Us, Inc. | Stable landing above RF conductor in MEMS device |
US11705298B2 (en) * | 2019-06-22 | 2023-07-18 | Qorvo Us, Inc. | Flexible MEMS device having hinged sections |
US11667516B2 (en) * | 2019-06-26 | 2023-06-06 | Qorvo Us, Inc. | MEMS device having uniform contacts |
US11646576B2 (en) | 2021-09-08 | 2023-05-09 | Analog Devices International Unlimited Company | Electrical overstress protection of microelectromechanical systems |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050156695A1 (en) * | 2002-05-17 | 2005-07-21 | International Business Machines Corporation | Micro-electro-mechanical RF switch |
JP2008278147A (ja) * | 2007-04-27 | 2008-11-13 | Fujitsu Ltd | 可変フィルタ素子、可変フィルタモジュール、およびこれらの製造方法 |
JP2010061976A (ja) * | 2008-09-03 | 2010-03-18 | Toshiba Corp | スイッチ及びesd保護素子 |
JP2010129371A (ja) * | 2008-11-27 | 2010-06-10 | Toshiba Corp | スイッチ及びesd保護素子 |
JP2012019307A (ja) * | 2010-07-07 | 2012-01-26 | Hitachi Consumer Electronics Co Ltd | 受信装置および送受信装置 |
WO2015017743A1 (en) * | 2013-08-01 | 2015-02-05 | Cavendish Kinetics, Inc | Dvc utilizing mems resistive switches and mim capacitors |
WO2015160723A1 (en) * | 2014-04-14 | 2015-10-22 | Skyworks Solutions, Inc. | Mems devices having discharge circuits |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6567251B1 (en) * | 1999-08-30 | 2003-05-20 | Hewlett-Packard Development Company | Electrostatic discharge protection of electrically-inactive components |
US7276991B2 (en) * | 2005-09-09 | 2007-10-02 | Innovative Micro Technology | Multiple switch MEMS structure and method of manufacture |
US7529017B1 (en) * | 2006-05-25 | 2009-05-05 | Silicon Light Machines Corporation | Circuit and method for snapdown prevention in voltage controlled MEMS devices |
US7864491B1 (en) * | 2007-08-28 | 2011-01-04 | Rf Micro Devices, Inc. | Pilot switch |
US8330224B2 (en) * | 2009-09-18 | 2012-12-11 | Meggitt (San Juan Capistrano), Inc. | Integrated MEMS and ESD protection devices |
US9156677B2 (en) * | 2012-02-09 | 2015-10-13 | Rf Micro Devices, Inc. | Shunt switch at common port to reduce hot switching |
US20140015731A1 (en) | 2012-07-11 | 2014-01-16 | Rf Micro Devices, Inc. | Contact mems architecture for improved cycle count and hot-switching and esd |
-
2016
- 2016-11-14 WO PCT/US2016/061933 patent/WO2017087338A1/en active Application Filing
- 2016-11-14 US US15/771,245 patent/US11476245B2/en active Active
- 2016-11-14 CN CN201680066404.8A patent/CN108352263A/zh active Pending
- 2016-11-14 EP EP16802221.8A patent/EP3378079A1/en active Pending
- 2016-11-14 KR KR1020187016993A patent/KR20180083906A/ko not_active Application Discontinuation
- 2016-11-14 JP JP2018525395A patent/JP6873127B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050156695A1 (en) * | 2002-05-17 | 2005-07-21 | International Business Machines Corporation | Micro-electro-mechanical RF switch |
JP2008278147A (ja) * | 2007-04-27 | 2008-11-13 | Fujitsu Ltd | 可変フィルタ素子、可変フィルタモジュール、およびこれらの製造方法 |
JP2010061976A (ja) * | 2008-09-03 | 2010-03-18 | Toshiba Corp | スイッチ及びesd保護素子 |
JP2010129371A (ja) * | 2008-11-27 | 2010-06-10 | Toshiba Corp | スイッチ及びesd保護素子 |
JP2012019307A (ja) * | 2010-07-07 | 2012-01-26 | Hitachi Consumer Electronics Co Ltd | 受信装置および送受信装置 |
WO2015017743A1 (en) * | 2013-08-01 | 2015-02-05 | Cavendish Kinetics, Inc | Dvc utilizing mems resistive switches and mim capacitors |
WO2015160723A1 (en) * | 2014-04-14 | 2015-10-22 | Skyworks Solutions, Inc. | Mems devices having discharge circuits |
Also Published As
Publication number | Publication date |
---|---|
CN108352263A (zh) | 2018-07-31 |
US11476245B2 (en) | 2022-10-18 |
US20180315748A1 (en) | 2018-11-01 |
KR20180083906A (ko) | 2018-07-23 |
EP3378079A1 (en) | 2018-09-26 |
WO2017087338A1 (en) | 2017-05-26 |
JP6873127B2 (ja) | 2021-05-19 |
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