JP2019212805A5 - - Google Patents

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JP2019212805A5
JP2019212805A5 JP2018108896A JP2018108896A JP2019212805A5 JP 2019212805 A5 JP2019212805 A5 JP 2019212805A5 JP 2018108896 A JP2018108896 A JP 2018108896A JP 2018108896 A JP2018108896 A JP 2018108896A JP 2019212805 A5 JP2019212805 A5 JP 2019212805A5
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JP2018108896A
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JP2019212805A (ja
JP7073924B2 (ja
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Priority claimed from JP2018108896A external-priority patent/JP7073924B2/ja
Priority to JP2018108896A priority Critical patent/JP7073924B2/ja
Priority to US17/058,975 priority patent/US20210217609A1/en
Priority to CN201980035657.2A priority patent/CN112204715A/zh
Priority to PCT/JP2019/020933 priority patent/WO2019235288A1/ja
Priority to KR1020207037095A priority patent/KR102612704B1/ko
Publication of JP2019212805A publication Critical patent/JP2019212805A/ja
Publication of JP2019212805A5 publication Critical patent/JP2019212805A5/ja
Publication of JP7073924B2 publication Critical patent/JP7073924B2/ja
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JP2018108896A 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置 Active JP7073924B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018108896A JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置
KR1020207037095A KR102612704B1 (ko) 2018-06-06 2019-05-27 원자층 성장법을 사용해서 기판 상에 박막을 성막하는 방법, 또는 장치
CN201980035657.2A CN112204715A (zh) 2018-06-06 2019-05-27 使用原子层沉积法在基片上形成薄膜的方法或装置
PCT/JP2019/020933 WO2019235288A1 (ja) 2018-06-06 2019-05-27 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置
US17/058,975 US20210217609A1 (en) 2018-06-06 2019-05-27 Method or apparatus for forming thin film on substrate employing atomic layer epitaxy method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018108896A JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置

Publications (3)

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JP2019212805A JP2019212805A (ja) 2019-12-12
JP2019212805A5 true JP2019212805A5 (https=) 2021-04-22
JP7073924B2 JP7073924B2 (ja) 2022-05-24

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JP2018108896A Active JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置

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US (1) US20210217609A1 (https=)
JP (1) JP7073924B2 (https=)
KR (1) KR102612704B1 (https=)
CN (1) CN112204715A (https=)
WO (1) WO2019235288A1 (https=)

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Publication number Priority date Publication date Assignee Title
FI126168B (en) 2012-09-18 2016-07-29 Novaldmedical Ltd Oy A method for coating pharmaceutical substrates
EP3419659A1 (en) 2016-02-23 2019-01-02 The Regents of the University of Colorado, A Body Corporate Compositions and methods for making and using thermostable immunogenic formulations with increased compatibility of use as vaccines against one or more pathogens
EP3740197A4 (en) 2018-01-16 2021-11-10 Applied Materials, Inc. METAL OXIDE ENCAPSULATED COMPOSITIONS OF THE ACTIVE SUBSTANCE AND PROCESS FOR THEIR MANUFACTURING
KR20220051385A (ko) 2019-08-27 2022-04-26 어플라이드 머티어리얼스, 인코포레이티드 약제 용해도 조절을 위한 증기상 코팅들
KR20220107635A (ko) 2021-01-25 2022-08-02 에스케이하이닉스 주식회사 선택적 영역 증착 방법 및 이를 적용한 전자 소자의 제조 방법
US12322592B2 (en) 2021-02-12 2025-06-03 Applied Materials, Inc. Deposition of silicon-based dielectric films
KR102722199B1 (ko) * 2021-05-10 2024-10-28 도쿄엘렉트론가부시키가이샤 질화티타늄막의 성막 방법, 및 질화티타늄막을 성막하는 장치
JP7683383B2 (ja) * 2021-07-27 2025-05-27 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置
JP7674064B2 (ja) * 2021-09-16 2025-05-09 東京エレクトロン株式会社 成膜方法及び成膜装置
EP4408402A4 (en) 2021-09-30 2025-08-06 Applied Materials Inc LOW TEMPERATURE SILICON OXIDE COATING FOR PHARMACEUTICAL APPLICATIONS
WO2023128331A1 (ko) * 2021-12-30 2023-07-06 주식회사동진쎄미켐 절연막 패턴 형성 방법, 패턴 형성에 사용되는 전구체 및 반도체 소자
JP7719735B2 (ja) * 2022-02-18 2025-08-06 キオクシア株式会社 半導体製造装置
WO2023215472A1 (en) * 2022-05-06 2023-11-09 Applied Materials, Inc. Ozone-based low temperature silicon oxide coating for pharmaceutical applications
JP2024013097A (ja) * 2022-07-19 2024-01-31 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20240026527A1 (en) * 2022-07-22 2024-01-25 Applied Materials, Inc. Method of depositing silicon based dielectric film
KR20240081741A (ko) * 2022-11-30 2024-06-10 주식회사 동진쎄미켐 절연막 패턴 형성 방법 및 반도체 소자
WO2025187589A1 (ja) * 2024-03-05 2025-09-12 富士フイルム株式会社 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法、化合物

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CN102191483B (zh) * 2003-04-23 2012-10-03 艾克斯特朗公司 瞬时增强原子层沉积
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
JP4904520B2 (ja) * 2005-03-28 2012-03-28 株式会社日立情報システムズ Ｒｆｉｄタグシステム及び該ｒｆｉｄタグシステム用の通信システム
JP2006286711A (ja) * 2005-03-31 2006-10-19 Mitsui Eng & Shipbuild Co Ltd シリコン酸化膜の形成方法
TWI462179B (zh) * 2006-09-28 2014-11-21 東京威力科創股份有限公司 用以形成氧化矽膜之成膜方法與裝置
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
JP5270476B2 (ja) 2009-07-07 2013-08-21 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US9685320B2 (en) * 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP5692337B2 (ja) * 2013-11-25 2015-04-01 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US10049921B2 (en) * 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
JP6669070B2 (ja) * 2014-09-19 2020-03-18 凸版印刷株式会社 成膜装置及び成膜方法
US10629435B2 (en) * 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide

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