JP2019212805A5 - - Google Patents

Download PDF

Info

Publication number
JP2019212805A5
JP2019212805A5 JP2018108896A JP2018108896A JP2019212805A5 JP 2019212805 A5 JP2019212805 A5 JP 2019212805A5 JP 2018108896 A JP2018108896 A JP 2018108896A JP 2018108896 A JP2018108896 A JP 2018108896A JP 2019212805 A5 JP2019212805 A5 JP 2019212805A5
Authority
JP
Japan
Prior art keywords
comparative example
chemical formula
dipas
3dmas
bdeas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018108896A
Other languages
English (en)
Japanese (ja)
Other versions
JP7073924B2 (ja
JP2019212805A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2018108896A external-priority patent/JP7073924B2/ja
Priority to JP2018108896A priority Critical patent/JP7073924B2/ja
Priority to PCT/JP2019/020933 priority patent/WO2019235288A1/ja
Priority to US17/058,975 priority patent/US20210217609A1/en
Priority to KR1020207037095A priority patent/KR102612704B1/ko
Priority to CN201980035657.2A priority patent/CN112204715A/zh
Publication of JP2019212805A publication Critical patent/JP2019212805A/ja
Publication of JP2019212805A5 publication Critical patent/JP2019212805A5/ja
Publication of JP7073924B2 publication Critical patent/JP7073924B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2018108896A 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置 Active JP7073924B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018108896A JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置
CN201980035657.2A CN112204715A (zh) 2018-06-06 2019-05-27 使用原子层沉积法在基片上形成薄膜的方法或装置
US17/058,975 US20210217609A1 (en) 2018-06-06 2019-05-27 Method or apparatus for forming thin film on substrate employing atomic layer epitaxy method
KR1020207037095A KR102612704B1 (ko) 2018-06-06 2019-05-27 원자층 성장법을 사용해서 기판 상에 박막을 성막하는 방법, 또는 장치
PCT/JP2019/020933 WO2019235288A1 (ja) 2018-06-06 2019-05-27 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018108896A JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置

Publications (3)

Publication Number Publication Date
JP2019212805A JP2019212805A (ja) 2019-12-12
JP2019212805A5 true JP2019212805A5 (enExample) 2021-04-22
JP7073924B2 JP7073924B2 (ja) 2022-05-24

Family

ID=68769346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018108896A Active JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置

Country Status (5)

Country Link
US (1) US20210217609A1 (enExample)
JP (1) JP7073924B2 (enExample)
KR (1) KR102612704B1 (enExample)
CN (1) CN112204715A (enExample)
WO (1) WO2019235288A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI126168B (en) 2012-09-18 2016-07-29 Novaldmedical Ltd Oy A method for coating pharmaceutical substrates
BR112018017173A2 (pt) 2016-02-23 2019-01-02 Univ Colorado Regents composições e métodos para a produção e uso de formulações imunogênicas termoestáveis com compatibilidade aumentada de uso como vacinas contra um ou mais patógenos
KR102496427B1 (ko) 2018-01-16 2023-02-06 어플라이드 머티어리얼스, 인코포레이티드 금속 산화물로 캡슐화된 약물 조성물들 및 그의 제조 방법들
KR20220107635A (ko) 2021-01-25 2022-08-02 에스케이하이닉스 주식회사 선택적 영역 증착 방법 및 이를 적용한 전자 소자의 제조 방법
US12322592B2 (en) 2021-02-12 2025-06-03 Applied Materials, Inc. Deposition of silicon-based dielectric films
KR102722199B1 (ko) * 2021-05-10 2024-10-28 도쿄엘렉트론가부시키가이샤 질화티타늄막의 성막 방법, 및 질화티타늄막을 성막하는 장치
JP7683383B2 (ja) * 2021-07-27 2025-05-27 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置
JP7674064B2 (ja) * 2021-09-16 2025-05-09 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2023128331A1 (ko) * 2021-12-30 2023-07-06 주식회사동진쎄미켐 절연막 패턴 형성 방법, 패턴 형성에 사용되는 전구체 및 반도체 소자
JP7719735B2 (ja) * 2022-02-18 2025-08-06 キオクシア株式会社 半導体製造装置
WO2023215472A1 (en) * 2022-05-06 2023-11-09 Applied Materials, Inc. Ozone-based low temperature silicon oxide coating for pharmaceutical applications
US20240026527A1 (en) * 2022-07-22 2024-01-25 Applied Materials, Inc. Method of depositing silicon based dielectric film
KR20240081741A (ko) * 2022-11-30 2024-06-10 주식회사 동진쎄미켐 절연막 패턴 형성 방법 및 반도체 소자
WO2025187589A1 (ja) * 2024-03-05 2025-09-12 富士フイルム株式会社 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法、化合物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7981473B2 (en) * 2003-04-23 2011-07-19 Aixtron, Inc. Transient enhanced atomic layer deposition
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
JP4904520B2 (ja) * 2005-03-28 2012-03-28 株式会社日立情報システムズ Ｒｆｉｄタグシステム及び該ｒｆｉｄタグシステム用の通信システム
JP2006286711A (ja) * 2005-03-31 2006-10-19 Mitsui Eng & Shipbuild Co Ltd シリコン酸化膜の形成方法
TWI462179B (zh) * 2006-09-28 2014-11-21 Tokyo Electron Ltd 用以形成氧化矽膜之成膜方法與裝置
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
JP5270476B2 (ja) 2009-07-07 2013-08-21 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US9685320B2 (en) * 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP5692337B2 (ja) * 2013-11-25 2015-04-01 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US10049921B2 (en) * 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
CN106715752B (zh) * 2014-09-19 2020-03-20 凸版印刷株式会社 成膜装置以及成膜方法
US10629435B2 (en) * 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide

Similar Documents

Publication Publication Date Title
JP2019212805A5 (enExample)
JP2015096530A5 (enExample)
JP2017176174A5 (enExample)
MX2015013291A (es) Composicion que comprende al menos dos moleculas neutralizadoras-aglutinadoras del virus de influenza a.
CN107995862B8 (zh) 包含sglt-2抑制剂之液态药物组合物
WO2017135582A3 (ko) 내열성 및 용제 용해성이 우수한 폴리에스테르 수지 및 이를 함유하는 코팅 조성물
JP2018528277A5 (enExample)
JP2018147822A5 (enExample)
BR112018015160A2 (pt) compostos trisamida e composições compreendendo os mesmos
EA201300460A1 (ru) Галогенированные диэтилтолуолдиамины
MY191843A (en) Trehalose phosphorylase
JP2016044348A5 (enExample)
MX386783B (es) Compuestos peptidomiméticos que neutralizan el virus influenza.
EP3976050C0 (en) ENHANCED DELIVERY OF GLYCYLCYCLINES BY INHALATION FOR THE TREATMENT OF MYCOBACTERIUM ABSCESSUS PULMONARY DISEASES
JP2017115098A5 (enExample)
PL414935A1 (pl) Sposób otrzymywania 6-acetamidoflawonu
JP2018095856A5 (enExample)
PH12018502095A1 (en) Amorphizing agent, amorphous composition comprising amorphizing agent and utilization thereof
TH188494S (th) ข้อต่อ
TH188492S (th) ข้อต่อ
TH188493S (th) ข้อต่อ
PL407364A1 (pl) Nowe pochodne naftalenu, sposób ich wytwarzania i zastosowanie, nowe związki pośrednie do wytwarzania nowych pochodnych naftalenu, nowe fotosensybilizatory do procesów fotoinicjowanej polimeryzacji kationowej oraz nowe systemy fotoinicjujące
TH2001004102A (th) กรรมวิธีการเตรียมพอลิเมอร์คอมโพสิตที่มีความพรุนโดยกระบวนการโฟโตแคตาไลติก
TH1901002977A (th) องค์ประกอบพอลิเมอร์
EA202092912A1 (ru) Липидно-модифицированные соединения нуклеиновой кислоты и способы