JP2019192849A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To provide a technique for reducing uneven cleaning when cleaning a substrate with a rotational brush.SOLUTION: A substrate processing apparatus 1 comprises: a spin chuck 3 holding a wafer W; a spin motor 9 causing the wafer W held by the spin chuck 3 to rotate around a first rotational axial line A1; a brush 18 capable of being brought into contact with a surface 13 of the wafer W held by the spin chuck 3; a brush rotational mechanism 26 causing the brush 18 to rotate around a second rotational axial line A2 in parallel to the first rotational axial line A1; and a swing driving mechanism 20 causing the brush 18 to move in a radial direction for the wafer W. The swing driving mechanism 20 causes the brush 18 to move in the radial direction by a distance equal to or smaller than a radius of rotation (=φb/2) of teh brush 18 during the wafer W rotates one turn by the spin motor 9.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate with a brush. Examples of substrates to be processed include semiconductor substrates, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Examples include photomask substrates, ceramic substrates, solar cell substrates, and printed circuit boards.

  The manufacturing process of a semiconductor device includes a process of forming a fine pattern on a surface of a semiconductor wafer (hereinafter simply referred to as “wafer”) by repeating processes such as film formation and etching. Since the surface of the wafer itself and the surface of the thin film formed on the wafer surface must be kept clean for microfabrication, the wafer is cleaned as necessary. For example, after a wafer or a thin film formed on the surface thereof is polished using a slurry (abrasive), the slurry remains on the wafer surface, and thus cleaning is required to remove it.

  Conventionally, a so-called scan brush apparatus has been used for wafer cleaning processing for removing slurry remaining on the wafer surface (for example, Patent Document 1). Specifically, the wafer held on the spin chuck is rotated at high speed, and a rotating brush is brought into contact with the rotating wafer surface to physically clean the wafer surface. At this time, the surface of the wafer is cleaned with the brush by moving the brush in the radial direction with respect to the wafer.

JP-A-11-57632

  FIG. 10 is a schematic plan view showing a brush 918 for cleaning the surface 913 of the wafer W. FIG. In FIG. 10, both the wafer W and the brush 918 are rotated clockwise. As shown in FIG. 10, when the brush 918 is rotated, one half of the brush 918 (the right half in FIG. 10) moves so as to run backward with respect to the rotation direction RD <b> 1 of the wafer W. Increases speed. On the other hand, the other half of the brush 918 (the left half in FIG. 10) moves so as to follow the rotation direction RD1 of the wafer W, so the relative speed with respect to the wafer W is small. For this reason, the other half of the brush 918 has a lower cleaning efficiency than the one half. As described above, since the cleaning efficiency varies among the rotating brushes 918, there is a possibility that uneven cleaning occurs.

  Therefore, an object of the present invention is to provide a technique for reducing cleaning unevenness when cleaning a substrate with a rotating brush.

  In order to solve the above problems, a first aspect is a substrate processing apparatus for processing a substrate, wherein the substrate holding unit that holds the substrate and the substrate held by the substrate holding unit are rotated about a first rotation axis. A substrate rotation mechanism that allows the brush to come into contact with the surface of the substrate held by the substrate holder, and a brush rotation mechanism that rotates the brush around a second rotation axis parallel to the first rotation axis. A brush moving mechanism for moving the brush in a radial direction relative to the substrate, and the brush moving mechanism moves the brush to the brush while the substrate is rotated once by the substrate rotating mechanism. Relative movement is made in the radial direction by a distance equal to or smaller than the turning radius.

  A second aspect is the substrate processing apparatus according to the first aspect, wherein the brush rotation mechanism rotates the brush in a direction opposite to the rotation direction of the substrate by the substrate rotation mechanism.

  A 3rd aspect is a substrate processing apparatus of the 2nd aspect, Comprising: The said brush movement mechanism makes the rotation center of the said brush by the said brush rotation mechanism the position inside the rotation radius of the said brush from the peripheral edge of the said board | substrate. As described above, the brush is moved.

  A fourth aspect is the substrate processing apparatus according to the third aspect, wherein the brush moving mechanism moves the brush from the center of the substrate to the peripheral edge of the substrate.

  A fifth aspect is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the number of rotations of the substrate by the substrate rotation mechanism is Rw (rpm), and the diameter of the brush is φb (mm). In this case, the radial movement speed Vb (mm / sec) of the brush by the brush moving mechanism is φb × Rw / 120 or less.

  A sixth aspect is a substrate processing method for processing a substrate, comprising: (a) a step of holding the substrate by a substrate holding unit; and (b) the substrate held by the substrate holding unit by the step (a). A step of rotating around a first rotation axis; (c) a step of bringing a brush into contact with the surface of the substrate rotated by the step (b); and (d) a contact with the surface of the substrate by the step (c). Rotating the brush in contact around a second rotation axis parallel to the first rotation axis; and (e) relatively moving the brush rotated in the step (d) in the radial direction. The step (e) is a step of relatively moving the brush in the radial direction by a distance equal to or smaller than the rotation radius of the brush while the substrate is rotated once by the step (b). .

  According to the substrate processing apparatus of the first aspect, when the brush is moved relative to the substrate in the radial direction, the surface of the substrate is cleaned with no gap at the portion of the brush that rotates automatically against the rotation of the substrate. be able to. Thereby, since the substrate can be effectively cleaned, the occurrence of uneven cleaning can be reduced.

  According to the substrate processing apparatus of the second aspect, the relative rotation speed of the substrate with respect to the substrate can be increased by rotating in the direction opposite to the rotation direction of the substrate. Thereby, the cleaning efficiency of the substrate can be increased.

  According to the substrate processing apparatus of the third aspect, the peripheral portion of the substrate can be cleaned with the radially outer half of the rotating brush with high cleaning efficiency.

  According to the substrate processing apparatus of the fourth aspect, the entire surface of the substrate can be cleaned. In addition, since the peripheral portion of the substrate can be cleaned with the radially outer half having high cleaning efficiency, occurrence of cleaning unevenness can be reduced.

  According to the substrate processing method of the sixth aspect, when the brush is moved relative to the substrate in the radial direction, the surface of the substrate is cleaned without a gap at a portion of the brush that is reverse to the rotation of the substrate. Can do. Thereby, since the substrate can be efficiently cleaned, the occurrence of uneven cleaning can be reduced.

1 is a plan view showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment. It is a schematic side view of the inside of the substrate processing apparatus 1 of the embodiment. It is a block diagram which shows the electrical constitution of the substrate processing apparatus 1 of embodiment. It is a figure which shows the flow of a process of the wafer W by the substrate processing apparatus 1 of embodiment. 4 is a schematic plan view showing scanning movement of a brush 18 on a wafer W. FIG. 6 is a schematic plan view showing a relative scan movement of the brush 18 as viewed from the wafer W. FIG. FIG. 4 is a schematic plan view showing a first cleaning state of the brush 18. FIG. 5 is a schematic plan view showing a second cleaning state of the brush 18. 3 is a schematic plan view showing a brush 18 for cleaning a peripheral region 13A of a wafer W. FIG. 5 is a schematic plan view showing a brush 918 for cleaning the surface 913 of the wafer W. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the component described in this embodiment is an illustration to the last, and is not a thing of the meaning which limits the scope of the present invention only to them. In the drawings, the size and number of each part may be exaggerated or simplified as necessary for easy understanding.

  Unless otherwise specified, expressions that indicate relative or absolute positional relationships (eg, “in one direction”, “along one direction”, “parallel”, “orthogonal”, “center”, “concentric”, “coaxial”, etc.) Not only the positional relationship is strictly expressed, but also a state of relative displacement with respect to an angle or a distance within a range where a tolerance or a similar function can be obtained.

  Expressions indicating equal states (for example, “same”, “equal”, “homogeneous”, etc.), unless otherwise specified, not only represent quantitatively exactly equal states but also provide tolerances or similar functions. It shall also represent a state where there is a difference.

  Unless otherwise specified, the expression indicating the shape (for example, “square shape” or “cylindrical shape”) not only represents the shape geometrically but also within a range where the same effect can be obtained. A shape having unevenness and chamfering is also expressed.

<1. Embodiment>
FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus 1 according to the embodiment. FIG. 2 is an illustrative side view of the inside of the substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 is a single-wafer type apparatus that processes semiconductor wafers W (hereinafter simply referred to as “wafers W”) one by one as an example of a substrate. The substrate processing apparatus 1 includes a processing chamber 2 partitioned by a partition wall. The substrate processing apparatus 1 includes a spin chuck 3, a surface nozzle 4, and a brush mechanism 6 in a processing chamber 2.

  The spin chuck 3 rotates the wafer W while holding it in a horizontal posture. “Horizontal posture” refers to a state in which the wafer W is parallel to the horizontal plane. The spin chuck 3 is an example of a substrate holding mechanism.

  The spin chuck 3 includes, for example, a vacuum chuck. The spin chuck 3 includes a spin shaft 7, an adsorption base 8, and a spin motor 9. The spin shaft 7 extends in the vertical direction. The suction base 8 is attached to the upper end of the spin shaft 7 and holds the wafer W in a horizontal posture by sucking the back surface 14 (lower surface) of the wafer W on the upper surface thereof. The spin motor 9 has a rotation shaft coupled coaxially with the spin shaft 7. When the spin motor 9 is driven in a state where the back surface 14 of the wafer W is sucked and held by the suction base 8, the wafer W rotates around the first rotation axis A <b> 1 that is the center of the spin shaft 7. The spin motor 9 is an example of a substrate rotation mechanism.

  In the following description, a direction orthogonal to the first rotation axis A1 is referred to as a “radial direction”. In addition, a direction toward the first rotation axis A1 in the radial direction is referred to as “radially inward”, and a direction toward the opposite side to the first rotation axis A1 in the radial direction is referred to as “radially outward”.

  The front surface nozzle 4 is provided so that a processing liquid can be supplied to the front surface 13 of the wafer W. Here, the surface 13 of the wafer W is a surface on which a device is formed, and is a surface (upper surface) facing upward in the vertical direction. A processing liquid supply pipe 10 is connected to the surface nozzle 4. A processing liquid from a processing liquid supply source (not shown) is supplied to the processing liquid supply pipe 10 via a processing liquid valve 12. The surface nozzle 4 discharges the processing liquid supplied through the processing liquid supply pipe 10 toward the center of the surface 13 of the wafer W held by the spin chuck 3.

  The processing liquid supplied to the surface nozzle 4 is, for example, pure water (Deionized Water: DIW). However, the treatment liquid is not limited to pure water, and may be, for example, functional water such as carbonated water, ion water, ozone water, reduced water (hydrogen water), or magnetic water. Further, the treatment liquid may be a chemical liquid such as ammonia water or a mixed liquid of ammonia water and hydrogen peroxide water.

  The brush mechanism 6 is configured to be able to clean the surface 13 of the wafer W. The brush mechanism 6 includes a swing arm 16, an arm support shaft 17, and a brush 18. The swing arm 16 is a member that extends in the horizontal direction above the position (holding position) of the wafer W held by the spin chuck 3. The arm support shaft 17 is a member that extends outside the rotation range of the wafer W and extends in the vertical direction in plan view. The upper end portion of the arm support shaft 17 is coupled to the lower surface of one end portion (base end portion) of the swing arm 16. The brush 18 is attached to the tip of the swing arm 16 and cleans the surface 13 (upper surface) of the wafer W with the tip (lower end). The brush 18 is made of, for example, a sponge material such as PVA (polyvinyl alcohol), and has a substantially drum shape that is rotationally symmetric about the vertical axis.

  A lift drive mechanism 19 is coupled to the arm support shaft 17. The arm support shaft 17 receives the driving force of the lifting drive mechanism 19. The elevating drive mechanism 19 moves the arm support shaft 17 up and down to move the swing arm 16 up and down integrally with the arm support shaft 17.

  Further, a swing drive mechanism 20 is coupled to the arm support shaft 17. The swing drive mechanism 20 swings the swing arm 16 around the arm support shaft 17 by reciprocating the arm support shaft 17. In FIG. 1, the position of the swing arm 16 when the brush 18 processes the substrate is indicated by a two-dot chain line, and the position of the swing arm 16 when the brush 18 is retracted to the standby position is indicated by a solid line. ing.

  A brush rotation shaft 25 extending in the vertical direction is rotatably provided at the tip of the swing arm 16. A brush holder 32 is attached to the lower end portion of the brush rotation shaft 25 via a holder attachment portion 31. The brush 18 is attached below the brush holder 32.

  The brush rotation shaft 25 is connected to a brush rotation mechanism 26 (brush rotation mechanism) for rotating the brush 18 inside the swing arm 16. The brush rotation mechanism 26 includes, for example, a pulley 27 that is coupled to the brush rotation shaft 25 so as to be integrally rotatable, a pulley 28 that is driven by a motor 29, and a belt 30 that is stretched between the pair of pulleys 27 and 28. including. The brush rotation mechanism 26 rotates the central axis parallel to the vertical direction of the brush 18 as the second rotation axis A2. The second rotation axis A2 is a straight line extending in the vertical direction, and is parallel to the first rotation axis A1.

  FIG. 3 is a block diagram illustrating an electrical configuration of the substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 includes a control unit 45 (control means) including a microcomputer. Connected to the control unit 45 is a recipe input key 46 for the user to input a processing recipe (various conditions for processing the wafer W). Further, the spin motor 9, the processing liquid valve 12, the lift drive mechanism 19, the swing drive mechanism 20, the brush rotation mechanism 26, and the like are connected to the control unit 45 as control targets.

  FIG. 4 is a diagram illustrating a processing flow of the wafer W by the substrate processing apparatus 1 according to the embodiment. Prior to the processing of the wafer W, the user operates the recipe input key 46 to set the pressing amount of the brush 18 against the surface 13 of the wafer W (step S101). The amount of pressing refers to the amount of elastic deformation of the brush 18 when the cleaning surface (lower surface) of the brush 18 is pressed against the surface 13 of the wafer W.

  When the wafer W is loaded into the processing chamber 2 and is held by the spin chuck 3 (step S102), the control unit 45 controls the spin motor 9 so that the spin chuck 3 holds the wafer W in the first position. It is rotated in the rotation direction RD1 (in this case, clockwise when viewed from above the wafer W) around one rotation axis A1 (step S103). Next, when the control unit 45 opens the processing liquid valve 12, supply of the processing liquid from the surface nozzle 4 to the surface 13 of the wafer W is started (step S104). Further, the control unit 45 controls the brush rotation mechanism 26 to rotate the brush 18 in the rotation direction RD2 around the second rotation axis A2 (here, counterclockwise when viewed from above the wafer W) (step S105). . Thus, in the present embodiment, the control unit 45 rotates the brush 18 in the rotational direction RD2 opposite to the rotational direction RD1 of the wafer W in plan view. In this way, by rotating the brush 18 in the opposite direction that is opposite to the rotation direction R1 of the wafer W, the relative rotation speed of the brush 18 with respect to the wafer W can be increased. Thereby, the cleaning efficiency of the wafer W can be increased.

  In this embodiment, for example, a disk-shaped semiconductor wafer having a diameter of 300 mm is used as the wafer W, and this wafer W is rotated by the spin chuck 3 at a rotation speed of, for example, 50 to 150 rpm (preferably 100 rpm). Is done. When the rotation speed of the wafer W is 50 to 150 rpm, the brush 18 is rotated by the brush rotation mechanism 26 at a rotation speed of, for example, about 100 rpm. By setting the rotational speeds of the wafer W and the brush 18 in this way, a sufficient centrifugal force is applied to the processing liquid supplied to the wafer W, so that the processing liquid can be sufficiently supplied to the peripheral portion of the wafer W. It is possible to perform a good cleaning process with the brush 18 on the surface 13 of the wafer W.

  When the rotation of the wafer W and the brush 18 is started, the control unit 45 controls the elevating drive mechanism 19 and the swing drive mechanism 20 so that the lower surface of the brush 18 is centered on the surface 13 of the wafer W (first rotation axis). A1) is brought into contact (step S106). More specifically, the elevating drive mechanism 19 is controlled so that the lower end of the brush 18 is disposed at a position higher than the surface 13 of the wafer W held by the spin chuck 3. Next, the swing drive mechanism 20 is controlled to rotate the swing arm 16, whereby the brush 18 is moved horizontally and placed on the center of the wafer W. Thereafter, the elevation drive mechanism 19 is controlled, and the brush 18 is moved to a height position corresponding to the pressing amount set by the recipe input key 46. As a result, the surface 13 of the wafer W is pressed against the brush 18.

  When the brush 18 comes into contact with the wafer W, the control unit 45 controls the swing drive mechanism 20 to scan the brush 18 to the peripheral edge of the wafer W (step S107). Specifically, the center of the brush 18 moves from the center of the wafer W (first rotation axis A1) in the moving direction SD1 that is radially outward, and the radius of the brush 18 from the design peripheral end surface of the wafer W Move to a position inward in the radial direction. In the present embodiment, as shown in FIG. 1, the swing arm 16 rotates around the arm support shaft 17, so that the brush 18 attached to the tip of the swing arm 16 scans. Therefore, the scanning movement direction of the brush 18 is not completely parallel to the radial direction, but is a combined direction of the radial direction and the rotation direction AR1.

  When the brush 18 moves to the peripheral edge of the wafer W, the control unit 45 controls the elevation drive mechanism 19 and the swing drive mechanism 20 to retract the brush 18 to the standby position (step S108). Further, until the brush 18 moves to the standby position, the control unit 45 controls the brush rotation mechanism 26 to stop the rotation of the brush 18 (step S109). Furthermore, when the control unit 45 closes the processing liquid valve 12, the supply of the processing liquid from the surface nozzle 4 is stopped.

  Subsequently, the control unit 45 controls the spin motor 9 to rotate the wafer W at a high speed (for example, 3000 rpm) (step S110). Thereby, the processing liquid adhering to the wafer W is shaken off, and the wafer W is dried.

  When the high-speed rotation of the wafer W is continued for a predetermined time, the control unit 45 controls the spin motor 9 to stop the rotation of the wafer W (step S111). Then, after the wafer W is stopped, the processed wafer W is unloaded from the processing chamber 2 (step S112).

<About moving speed Vb>
Here, the moving speed during the scanning movement of the brush 18 in step S107 will be described. FIG. 5 is a schematic plan view showing the scanning movement of the brush 18 on the wafer W. FIG. As the relative speed between the wafer W and the brush 18 is increased, the cleaning efficiency is improved. In this embodiment, in order to increase the relative speed, the wafer 18 is scanned and moved while rotating the brush 18.

  FIG. 6 is a schematic plan view showing the relative scanning movement of the brush 18 as viewed from the wafer W. When the brush 18 scans and moves on the rotating wafer W, the brush 18 moves relatively spirally with respect to the wafer W. In order to clean the entire surface 13 of the wafer W with the brush 18, the entire surface 13 of the wafer W may be moved so that the brush 18 traces without a gap. However, the rotating brush 18 has a portion having a high relative speed and a portion having a low relative speed with respect to the rotating wafer W. This point will be described in detail below.

  FIG. 7 is a schematic plan view showing a first cleaning state of the brush 18. FIG. 8 is a schematic plan view showing a second cleaning state of the brush 18. 7 and 8 show a state in which the brush 18 moves from a position L1 indicated by a solid line to a position L2 indicated by a two-dot chain line.

  In the example shown in FIGS. 7 and 8, the left half of the brush 18 rotates in the plan view so as to go backward in the rotation direction RD <b> 1 of the wafer W. On the other hand, in the plan view, the right half of the brush 18 rotates so as to follow the rotation direction RD1 of the wafer W. For this reason, since the relative speed with respect to the wafer W is larger in the left half of the brush 18 than in the right half of the brush 18, the cleaning efficiency is relatively high. Therefore, in order to improve the cleaning efficiency of the wafer W, it is desirable to clean the entire surface 13 of the wafer W with the outer half of the brush 18 in the radial direction. Therefore, the moving speed Vb (mm / sec) of the brush 18 in the radial direction is set so that the entire surface 13 of the wafer W is cleaned with the half of the brush 18 in the radial direction. Note that, as described above, the scan movement direction of the brush 18 is not completely parallel to the radial direction, but is a combined direction of the radial direction and the rotation direction AR1. Here, only the moving speed Vb in the radial direction is considered in order to consider cleaning at the radially outer portion of the brush 18.

  In the example shown in FIG. 7, the wafer W moves outward in the radial direction of the brush 18 larger than the radius of the brush 18 during one rotation of the wafer W. In the case of the example shown in FIG. 7, on the surface 13 of the wafer W, the cleaning area WA1 that is cleaned by the radially outer half of the brush 18 that has high cleaning efficiency and the non-cleaning area WA2 that is not cleaned by the portion have a diameter. It will occur alternately toward the outside of the direction.

  Here, if the rotation speed of the wafer W is Rw (rpm) and the diameter of the brush 18 is φb (mm), the time for one rotation of the wafer W is 60 / Rw (sec). Therefore, Expression 1 is established for the moving speed Vb in the case of FIG.

  Vb × 60 / Rw> φb / 2 (Formula 1)

  By transforming Equation 1, Equation 2 is derived.

  Vb> φb × R / 120 (Formula 2)

  In the example shown in FIG. 8, the brush 18 moves radially outward by the radius of the brush 18 (= φb / 2) during the time 60 / Rw (sec) until the wafer W rotates once. In this case, the surface 13 of the wafer W can be cleaned so as not to overlap with the radially outer half of the brush 18 having high cleaning efficiency. For the movement speed Vb in the case of FIG.

  Vb × 60 / Rw = φb / 2 (Formula 3)

  By transforming Equation 3, Equation 4 is derived.

  Vb = φb × Rw / 120 (Formula 4)

  The movement amount (= Vb × 60 / Rw) of the brush 18 in the radial direction during the time 60 / Rw (sec) until the wafer W makes one rotation is the radius (= φb / 2) of the brush 18. By making it the same or smaller, it is possible to suppress the occurrence of the non-cleaning area WA2. When this is expressed by an equation, it is expressed by equation 5.

  Vb × 60 / Rw ≦ φb / 2 (Formula 5)

  By transforming Equation 5, Equation 6 is derived.

  Vb ≦ φb × Rw / 120 (Formula 6)

  As described above, the control unit 45 controls the swing drive mechanism 20 so that the moving speed Vb of the brush 18 radially outward satisfies Expression 6, so that the brush 18 having high cleaning efficiency can be radially outward. With the side half, the surface 13 of the wafer W can be cleaned without gaps. Therefore, the surface 13 of the wafer W can be effectively cleaned, and the occurrence of cleaning unevenness can be reduced.

<About cleaning of peripheral area>
FIG. 9 is a schematic plan view showing the brush 18 for cleaning the peripheral region 13A of the wafer W. As shown in FIG. Here, the peripheral region 13 </ b> A is an annular region on the surface 13 of the wafer W that is on the inner side of the peripheral edge of the wafer W by the radius (φb / 2) of the brush 18. The inner region 13B of the surface 13 of the wafer W excluding the peripheral region 13A is scanned in the radially outward direction of the brush 18 and the radially outward half of the brush 18 and the radially inward side. Washed in both halves.

  With respect to the inner region 13B, the peripheral region 13A is a region that is cleaned only in the radially outer half of the brush 18 (here, the left half). Therefore, the cleaning efficiency of the peripheral region 13A is likely to be relatively reduced with respect to the inner region 13B. However, in the present embodiment, as described above, the radially outer half of the brush 18 rotates in a direction reverse to the rotation direction RD1 of the wafer W, thereby increasing the cleaning efficiency. For this reason, the peripheral region 13A can be appropriately cleaned.

  In the above description, the wafer W is moved from the center of the wafer W to the periphery of the wafer W in step S107. However, the wafer W may be moved from the peripheral edge toward the center. Further, the brush 18 may be reciprocated radially outward and radially inward.

  In the above description, the scan movement start position of the brush 18 is the center of the wafer W (rotation axis A1) in step S107. However, the scan movement may be started from a position other than the center of the wafer W. For example, the position upstream of the center of the wafer W in the movement direction SD1 may be moved from the upstream position to the peripheral edge via the center of the wafer W. Thus, by moving the brush 18 via the center of the wafer W, the center of the wafer W can be cleaned well.

  In the above description, in step S107, the brush 18 is scanned and moved in the direction opposite to the rotation direction RD1 of the wafer W. However, the rotation direction of the brush 18 may be reversed during the scanning movement. For example, for the inner region 13B, the brush 18 may be rotated in the same direction as the rotation direction RD1 of the wafer W. Even in this case, if the relationship between the rotational speed Rw of the wafer W, the diameter φb of the brush 18 and the moving speed Vb satisfies Expression 6, the occurrence of cleaning unevenness in the inner region 13B of the wafer W can be reduced. However, for the peripheral region 13A, it is desirable to rotate the brush 18 in the direction opposite to the rotation direction RD1 of the wafer W (rotation direction RD2).

  In the above description, only a single brush 18 is provided, but a plurality of brushes on the surface 13 of the wafer W may be provided. As with the brush 18, each brush also controls movement (for example, movement from the center of the wafer W to the outside in the radial direction) and rotation (rotation opposite to the rotation direction of the wafer W in plan view). Should be done.

  In the above description, the shape of the surface (contact surface) in contact with the wafer W of the brush 18 is a perfect circle, but other shapes (elliptical or polygonal) may be used. Even in a case other than a true circle, while the wafer W makes one rotation around the first rotation axis A1, the brush 18 is rotated with a radius of rotation (the radius of an arc drawn by the outermost surface of the contact surface rotating around the second rotation axis A2. It is preferable to move in the radial direction by a distance equal to or smaller than the minimum turning radius.

  In the above description, the swing drive mechanism 20 rotates the swing arm 16 around the arm support shaft 17 to rotate the brush 18 in the radial direction (strictly speaking, the combined direction of the radial direction and the rotational direction RD1). Move. Instead of such a brush moving mechanism, a brush moving mechanism for moving the brush 18 linearly in the radial direction, for example, may be provided.

  Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that countless variations that are not illustrated can be envisaged without departing from the scope of the present invention. The configurations described in the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

1 Substrate Processing Device 3 Spin Chuck (Substrate Holding Unit)
9 Spin motor (substrate rotation mechanism)
13 Surface 13A Peripheral area 13B Inner area 18 Brush 20 Oscillation drive mechanism (brush moving mechanism)
26 Brush rotation mechanism (Brush rotation mechanism)
31 Holder mounting part 32 Brush holder 45 Control part A1 1st rotation axis A2 2nd rotation axis RD1, RD2 Rotation direction SD1 Movement direction Vb Movement speed W Wafer WA1 Cleaning area WA2 Non-cleaning area

Claims (6)

A substrate processing apparatus for processing a substrate,
A substrate holder for holding the substrate;
A substrate rotation mechanism for rotating the substrate held by the substrate holding portion around a first rotation axis;
A brush capable of contacting the surface of the substrate held by the substrate holding unit;
A brush rotation mechanism for rotating the brush around a second rotation axis parallel to the first rotation axis;
A brush moving mechanism for moving the brush relative to the substrate in the radial direction;
With
The substrate processing apparatus, wherein the brush moving mechanism relatively moves the brush in the radial direction by a distance equal to or smaller than a rotation radius of the brush while the substrate rotates once by the substrate rotation mechanism. The substrate processing apparatus of claim 1,
The substrate processing apparatus, wherein the brush rotation mechanism rotates the brush in a direction opposite to a rotation direction of the substrate by the substrate rotation mechanism. The substrate processing apparatus according to claim 2,
The substrate processing apparatus, wherein the brush moving mechanism moves the brush so that a rotation center of the brush by the brush rotation mechanism is located at an inner position by a rotation radius of the brush from a peripheral edge of the substrate. The substrate processing apparatus according to claim 3, wherein
The brush moving mechanism is a substrate processing apparatus that moves the brush from a center of the substrate to a peripheral edge of the substrate. The substrate processing apparatus according to any one of claims 1 to 4, wherein:
When the rotation speed of the substrate by the substrate rotation mechanism is Rw (rpm) and the diameter of the brush is φb (mm),
The substrate processing apparatus, wherein a moving speed Vb (mm / sec) of the brush in the radial direction by the brush moving mechanism is φb × Rw / 120 or less. A substrate processing method for processing a substrate, comprising:
(a) a step of holding the substrate by the substrate holding unit;
(b) rotating the substrate held by the substrate holding part in the step (a) around a first rotation axis;
(c) contacting the brush with the surface of the substrate rotated by the step (b);
(d) rotating the brush in contact with the surface of the substrate in the step (c) around a second rotation axis parallel to the first rotation axis;
(e) a step of relatively moving the rotating brush in the radial direction in the step (d);
Including
The step (e) is a step of relatively moving the brush in the radial direction by a distance equal to or smaller than a rotation radius of the brush while the substrate is rotated once by the step (b). Substrate processing method.

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