JP2019175978A5 - - Google Patents
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- JP2019175978A5 JP2019175978A5 JP2018061743A JP2018061743A JP2019175978A5 JP 2019175978 A5 JP2019175978 A5 JP 2019175978A5 JP 2018061743 A JP2018061743 A JP 2018061743A JP 2018061743 A JP2018061743 A JP 2018061743A JP 2019175978 A5 JP2019175978 A5 JP 2019175978A5
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- JP
- Japan
- Prior art keywords
- transfer
- substrate
- chip component
- transfer substrate
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 19
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229920002050 silicone resin Polymers 0.000 claims 1
Description
上記の課題を解決するために、請求項1に記載の発明は、バンプ電極を有する複数のチップ部品を、前記バンプ電極が形成された面の反対側から保持して、前記バンプ電極と接続する電極を有する配線基板に転写して実装するのに用いる転写基板であって、ベース基板と、ベース基板上に形成され前記チップ部品を保持する接着層とを備え、前記ベース基板に用いる材料は、ヤング率1GPa以上、軟化温度200℃以上、熱伝導率1W/m・K以上の条件を満たし、前記接着層は融点が200℃以上で、反発式硬度計によって測定したリーブ硬さがベース基板のリーブ硬さの50%以上90%以下である転写基板である。
In order to solve the above problems, the invention according to claim 1 holds a plurality of chip components having bump electrodes from the opposite side of the surface on which the bump electrodes are formed and connects them to the bump electrodes. A transfer substrate used for transferring and mounting on a wiring board having electrodes, which comprises a base substrate and an adhesive layer formed on the base substrate and holding the chip components, and the material used for the base substrate is The base substrate has a Young rate of 1 GPa or more, a softening temperature of 200 ° C. or more, a thermal conductivity of 1 W / m · K or more, a melting point of 200 ° C. or more, and a leave hardness measured by a repulsive hardness tester. A transfer substrate having a leave hardness of 50% or more and 90% or less.
Claims (4)
ベース基板と、ベース基板上に形成され前記チップ部品を保持する接着層とを備え、
前記ベース基板に用いる材料は、ヤング率1GPa以上、軟化温度200℃以上、熱伝導率1W/m・K以上の条件を満たし、
前記接着層は融点が200℃以上で、反発式硬度計によって測定したリーブ硬さがベース基板のリーブ硬さの50%以上90%以下である転写基板。 A transfer substrate used for holding a plurality of chip components having bump electrodes from the opposite side of the surface on which the bump electrodes are formed and transferring them to a wiring board having electrodes connected to the bump electrodes. hand,
A base substrate and an adhesive layer formed on the base substrate to hold the chip components are provided.
The material used for the base substrate satisfies the conditions of Young's modulus of 1 GPa or more, softening temperature of 200 ° C. or more, and thermal conductivity of 1 W / m · K or more .
The adhesive layer is a transfer substrate having a melting point of 200 ° C. or higher and a leave hardness measured by a repulsive hardness tester of 50% or more and 90% or less of the leave hardness of the base substrate.
前記接着層としてシリコーン樹脂またはアクリル樹脂を用いる転写基板。 The transfer substrate according to claim 1.
A transfer substrate using a silicone resin or an acrylic resin as the adhesive layer.
前記第2転写基板として請求項1または請求項2に記載の転写基板を用い、
前記チップ部品を前記第1転写基板から前記第2転写基板に転写する段階で、前記チップ部品の間隔を、前記配線基板への実装間隔に変更し、
前記第2転写基板の前記チップ部品を保持した面と反対側から加圧しながら加熱してから、前記転写基板を前記チップ部品から剥離する実装方法。 A chip component having a diced bump electrode is transferred to a first transfer board holding the bump electrode side, transferred to a second transfer board holding the opposite side of the bump electrode, and then connected to the bump electrode. It is a mounting method that transfers and mounts on a wiring board that has electrodes to be used.
The transfer substrate according to claim 1 or 2 is used as the second transfer substrate.
At the stage of transferring the chip component from the first transfer board to the second transfer board, the interval of the chip component is changed to the mounting interval on the wiring board.
A mounting method in which the transfer substrate is peeled off from the chip component after heating while pressurizing from the side opposite to the surface holding the chip component of the second transfer substrate.
請求項3に記載の実装方法を用いて画像表示装置を製造する、画像表示装置の製造方法 Using an LED chip as the chip component and a TFT substrate as the wiring board,
A method for manufacturing an image display device, which manufactures an image display device using the mounting method according to claim 3.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018061743A JP6926018B2 (en) | 2018-03-28 | 2018-03-28 | Transfer substrate, mounting method using it, and manufacturing method of image display device |
PCT/JP2019/009222 WO2019188105A1 (en) | 2018-03-28 | 2019-03-08 | Transfer substrate, mounting method using same, and method for manufacturing image display device |
TW108110276A TWI758594B (en) | 2018-03-28 | 2019-03-25 | Transfer substrate, mounting method using the same, and manufacturing method of image display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018061743A JP6926018B2 (en) | 2018-03-28 | 2018-03-28 | Transfer substrate, mounting method using it, and manufacturing method of image display device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019175978A JP2019175978A (en) | 2019-10-10 |
JP2019175978A5 true JP2019175978A5 (en) | 2021-02-04 |
JP6926018B2 JP6926018B2 (en) | 2021-08-25 |
Family
ID=68059895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018061743A Active JP6926018B2 (en) | 2018-03-28 | 2018-03-28 | Transfer substrate, mounting method using it, and manufacturing method of image display device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6926018B2 (en) |
TW (1) | TWI758594B (en) |
WO (1) | WO2019188105A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7463153B2 (en) * | 2020-03-23 | 2024-04-08 | 東レエンジニアリング株式会社 | Mounting method and mounting device |
CN115335974A (en) * | 2020-03-23 | 2022-11-11 | 东丽工程株式会社 | Mounting method, mounting apparatus, and transfer apparatus |
TWI744181B (en) * | 2021-01-28 | 2021-10-21 | 台灣愛司帝科技股份有限公司 | Chip-transferring module, and device and method for transferring and bonding chips |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008130861A (en) * | 2006-11-22 | 2008-06-05 | Sony Corp | Silicon rubber layer laminate and its manufacturing method, abutting device, mounting method of article onto mounting substrate as well as manufacturing method of light emitting diode display device |
TWI590498B (en) * | 2013-06-03 | 2017-07-01 | 財團法人工業技術研究院 | Electronic device array and method of transfer-bonding electronic devices |
WO2015068723A1 (en) * | 2013-11-05 | 2015-05-14 | 千住金属工業株式会社 | Solder transfer sheet |
JP2015130476A (en) * | 2013-12-04 | 2015-07-16 | 日東電工株式会社 | Epoxy resin composition for optical semiconductor device and lead frame for optical semiconductor device obtained by using the same, sealed optical semiconductor element and optical semiconductor device |
JP6446951B2 (en) * | 2014-09-26 | 2019-01-09 | 日亜化学工業株式会社 | Device mounting method and light emitting device manufacturing method |
KR101990227B1 (en) * | 2014-12-05 | 2019-06-17 | 히타치가세이가부시끼가이샤 | Semiconductor adhesive, and semiconductor device and method for manufacturing same |
JP2016167544A (en) * | 2015-03-10 | 2016-09-15 | ソニー株式会社 | Electronic component, electronic component mounting board and mounting method of electronic component |
KR102064584B1 (en) * | 2015-10-29 | 2020-01-10 | 히타치가세이가부시끼가이샤 | Adhesives for semiconductors, semiconductor devices and methods of manufacturing the same |
US11186757B2 (en) * | 2016-02-08 | 2021-11-30 | Toray Industries, Inc. | Resin composition, resin layer, permanent adhesive, adhesive for temporary bonding, laminated film, processed wafer, and method for manufacturing electronic component or semiconductor device |
US10734350B2 (en) * | 2016-05-09 | 2020-08-04 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor device |
-
2018
- 2018-03-28 JP JP2018061743A patent/JP6926018B2/en active Active
-
2019
- 2019-03-08 WO PCT/JP2019/009222 patent/WO2019188105A1/en active Application Filing
- 2019-03-25 TW TW108110276A patent/TWI758594B/en active
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