JP2019169729A5 - - Google Patents

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Publication number
JP2019169729A5
JP2019169729A5 JP2019106695A JP2019106695A JP2019169729A5 JP 2019169729 A5 JP2019169729 A5 JP 2019169729A5 JP 2019106695 A JP2019106695 A JP 2019106695A JP 2019106695 A JP2019106695 A JP 2019106695A JP 2019169729 A5 JP2019169729 A5 JP 2019169729A5
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JP
Japan
Prior art keywords
metal portion
metal
axial direction
direction orthogonal
formed continuously
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Application number
JP2019106695A
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Japanese (ja)
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JP6838104B2 (en
JP2019169729A (en
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Publication of JP2019169729A5 publication Critical patent/JP2019169729A5/ja
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Publication of JP6838104B2 publication Critical patent/JP6838104B2/en
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Claims (1)

前記金属部（１１）の上端には形状が異なる張出部（１１ｃ・１１ｃ’）が形成されており、
前記張出部（１１ｃ）は、前記金属部（１１）の軸方向と直交する方向に平行な下面と、前記金属部（１１）の上面に連続して形成される上面と、該下面と上面の間に形成される側面とを有し、
前記張出部（１１ｃ’）は、前記金属部（１１）の軸方向と直交する方向に平行な下面と、前記金属部（１１）の上面に連続して形成される上面とを有することを特徴とする請求項６または７に記載の半導体装置。 Overhangs (11c and 11c ') having different shapes are formed at the upper end of the metal part (11).
The overhang portion (11c) has a lower surface parallel to a direction orthogonal to the axial direction of the metal portion (11), an upper surface formed continuously with the upper surface of the metal portion (11), and the lower surface and the upper surface. Having a side surface formed between
The overhang portion (11c ') has a lower surface parallel to a direction orthogonal to the axial direction of the metal portion (11) and an upper surface formed continuously with the upper surface of the metal portion (11). The semiconductor device according to claim 6 or 7 , wherein
JP2019106695A 2014-12-27 2019-06-07 Substrates for semiconductor devices and semiconductor devices Active JP6838104B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014266803 2014-12-27
JP2014266803 2014-12-27

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015199424A Division JP6681165B2 (en) 2014-12-27 2015-10-07 Substrate for semiconductor device, method for manufacturing substrate for semiconductor device, and semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020174744A Division JP2021005739A (en) 2014-12-27 2020-10-16 Semiconductor device substrate and manufacturing method thereof, and semiconductor device

Publications (3)

Publication Number Publication Date
JP2019169729A JP2019169729A (en) 2019-10-03
JP2019169729A5 true JP2019169729A5 (en) 2020-03-26
JP6838104B2 JP6838104B2 (en) 2021-03-03

Family

ID=56359832

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2015199424A Active JP6681165B2 (en) 2014-12-27 2015-10-07 Substrate for semiconductor device, method for manufacturing substrate for semiconductor device, and semiconductor device
JP2019106695A Active JP6838104B2 (en) 2014-12-27 2019-06-07 Substrates for semiconductor devices and semiconductor devices
JP2020174744A Pending JP2021005739A (en) 2014-12-27 2020-10-16 Semiconductor device substrate and manufacturing method thereof, and semiconductor device
JP2022096196A Active JP7426440B2 (en) 2014-12-27 2022-06-15 Substrates for semiconductor devices and semiconductor devices
JP2023186256A Pending JP2023181386A (en) 2014-12-27 2023-10-31 Substrate for semiconductor device and semiconductor device

Family Applications Before (1)

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JP2015199424A Active JP6681165B2 (en) 2014-12-27 2015-10-07 Substrate for semiconductor device, method for manufacturing substrate for semiconductor device, and semiconductor device

Family Applications After (3)

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JP2020174744A Pending JP2021005739A (en) 2014-12-27 2020-10-16 Semiconductor device substrate and manufacturing method thereof, and semiconductor device
JP2022096196A Active JP7426440B2 (en) 2014-12-27 2022-06-15 Substrates for semiconductor devices and semiconductor devices
JP2023186256A Pending JP2023181386A (en) 2014-12-27 2023-10-31 Substrate for semiconductor device and semiconductor device

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JP (5) JP6681165B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6681165B2 (en) * 2014-12-27 2020-04-15 マクセルホールディングス株式会社 Substrate for semiconductor device, method for manufacturing substrate for semiconductor device, and semiconductor device
WO2018003750A1 (en) 2016-06-28 2018-01-04 コニカミノルタ株式会社 Nursing/care item input device, nursing/care item input method, and nursing/care item management system
JP2018085487A (en) * 2016-11-25 2018-05-31 マクセルホールディングス株式会社 Method of manufacturing semiconductor device and semiconductor device
JP7323116B2 (en) * 2018-12-11 2023-08-08 株式会社Ｓｓテクノ Semiconductor package manufacturing method and semiconductor package

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JP3626075B2 (en) * 2000-06-20 2005-03-02 九州日立マクセル株式会社 Manufacturing method of semiconductor device
JP2002289739A (en) * 2001-03-23 2002-10-04 Dainippon Printing Co Ltd Resin sealed type semiconductor device, and circuit member for semiconductor device and its manufacturing method
JP2003124421A (en) * 2001-10-15 2003-04-25 Shinko Electric Ind Co Ltd Lead frame, manufacturing method therefor, and manufacturing method of semiconductor device using lead frame
JP2004214265A (en) * 2002-12-27 2004-07-29 Kyushu Hitachi Maxell Ltd Semiconductor device and its manufacturing method
JP3897704B2 (en) * 2003-01-16 2007-03-28 松下電器産業株式会社 Lead frame
JP2006148003A (en) * 2004-11-24 2006-06-08 Toshiba Corp Manufacturing method of semiconductor device and semiconductor device
JP4091050B2 (en) * 2005-01-31 2008-05-28 株式会社三井ハイテック Manufacturing method of semiconductor device
US7579137B2 (en) * 2005-12-24 2009-08-25 International Business Machines Corporation Method for fabricating dual damascene structures
US8089159B1 (en) * 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
JP2009135417A (en) * 2007-11-07 2009-06-18 Sumitomo Metal Mining Co Ltd Method for manufacturing substrate for mounting semiconductor element
US20090114345A1 (en) * 2007-11-07 2009-05-07 Sumitomo Metal Mining Co., Ltd. Method for manufacturing a substrate for mounting a semiconductor element
JP4984253B2 (en) * 2007-12-25 2012-07-25 大日本印刷株式会社 Manufacturing method of semiconductor device and manufacturing method of substrate for semiconductor device
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JP6681165B2 (en) * 2014-12-27 2020-04-15 マクセルホールディングス株式会社 Substrate for semiconductor device, method for manufacturing substrate for semiconductor device, and semiconductor device

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