JP2019169726A - Semiconductor device, metal member and method of manufacturing semiconductor device - Google Patents

Semiconductor device, metal member and method of manufacturing semiconductor device Download PDF

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JP2019169726A
JP2019169726A JP2019090986A JP2019090986A JP2019169726A JP 2019169726 A JP2019169726 A JP 2019169726A JP 2019090986 A JP2019090986 A JP 2019090986A JP 2019090986 A JP2019090986 A JP 2019090986A JP 2019169726 A JP2019169726 A JP 2019169726A
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open end
wall
metal member
protrusion
solder
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JP6680391B2 (en
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健志 甲斐
Kenshi Kai
健志 甲斐
力宏 丸山
Rikihiro Maruyama
力宏 丸山
誠 磯崎
Makoto Isozaki
誠 磯崎
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

To provide a semiconductor device, a metal member, and a method of manufacturing a semiconductor device which can eliminate assembly defects.SOLUTION: A flange 2 of one open end 10a of a tubular contact member 10 is joined to a conductive plate 22 of an insulating substrate by a solder 27. An external electrode terminal 25 is fitted to a main body tubular portion 1 of the tubular contact member 10. The tubular contact member 10 has a protruding portion 5 protruding inward from an inner wall 10c of the main body tubular portion 1. The protruding portion 5 is provided on an open end 10a side of the tubular contact member 10 over the entire circumference of the inner wall 10c of the main body tubular portion 1. The protruding portion 5 has a thickness t1 that is deformed by a load when the external electrode terminal 25 is press-fitted into the main body tubular portion 1. A height h1 at which the protruding portion 5 is arranged is set to a height that can block a solder 27a that has crawled up on the inner wall 10c of the main body tubular portion 1 so that a gap is formed with the lower end portion of the external electrode terminal 25 inserted to the predetermined depth of the main body tubular portion 1.SELECTED DRAWING: Figure 2

Description

この発明は、半導体装置、金属部材および半導体装置の製造方法に関する。   The present invention relates to a semiconductor device, a metal member, and a method for manufacturing a semiconductor device.

従来、例えば半導体モジュールなどの半導体装置は、絶縁基板の表面の導電性板に半導体チップや他の構成部材などをはんだにより接合した構成を有する。このような半導体モジュールとして、絶縁基板のおもて面の導電性板にはんだにより接合された中空筒状の金属部材(以下、筒状コンタクト部材とする)に外部電極用端子を嵌め合わせることで、導電性板と外部電極用端子とを電気的に接続した装置が提案されている(例えば、下記特許文献1参照。)。下記特許文献1では、外部電極用端子の底面の最大寸法を筒状コンタクト部材の空洞部の直径よりも若干大きくすることで、外部電極用端子と筒状コンタクト部材とを固く嵌め合わせている。   2. Description of the Related Art Conventionally, a semiconductor device such as a semiconductor module has a configuration in which a semiconductor chip or other constituent member is joined to a conductive plate on the surface of an insulating substrate with solder. As such a semiconductor module, by fitting external electrode terminals to a hollow cylindrical metal member (hereinafter referred to as a cylindrical contact member) joined to a conductive plate on the front surface of an insulating substrate by solder. An apparatus in which a conductive plate and an external electrode terminal are electrically connected has been proposed (see, for example, Patent Document 1 below). In the following Patent Document 1, the external electrode terminal and the cylindrical contact member are tightly fitted together by making the maximum dimension of the bottom surface of the external electrode terminal slightly larger than the diameter of the hollow portion of the cylindrical contact member.

従来の半導体モジュールの筒状コンタクト部材および外部電極用端子の構成について説明する。図12は、従来の半導体モジュールの要部の構成を示す断面図である。図13は、従来の半導体モジュールの要部の構成を示す平面図である。図13には、図12の筒状コンタクト部材110の本体筒部101を当該本体筒部101の中心軸と直交する切断面XYで切断し、当該切断面XYから積層基板120側を見たときの筒状コンタクト部材110の空洞部104および外部電極用端子125の平面形状を示す。なお、図12,13は、それぞれ下記特許文献1の図14,12に相当する。   The configuration of the cylindrical contact member and the external electrode terminal of the conventional semiconductor module will be described. FIG. 12 is a cross-sectional view showing a configuration of a main part of a conventional semiconductor module. FIG. 13 is a plan view showing a configuration of a main part of a conventional semiconductor module. In FIG. 13, when the main body cylinder portion 101 of the cylindrical contact member 110 of FIG. 12 is cut along a cutting plane XY perpendicular to the central axis of the main body cylinder portion 101, the laminated substrate 120 side is viewed from the cutting plane XY. The planar shape of the cavity 104 of the cylindrical contact member 110 and the external electrode terminal 125 is shown. 12 and 13 correspond to FIGS. 14 and 12 of Patent Document 1 below, respectively.

図12,13に示すように、筒状コンタクト部材110は、中空筒状の本体筒部101と、本体筒部101の両開放端110a,110bにそれぞれ設けられたフランジ102,103と、を備える。筒状コンタクト部材110の一方の開放端110aのフランジ102は、積層基板120のおもて面の導電性板122にはんだ(不図示)により接合されている。積層基板120は、セラミック基板121のおもて面に銅(Cu)箔により導電性板122を形成し、セラミック基板121の裏面に銅箔123を形成してなる。筒状コンタクト部材110は、導電性板122および図示省略するワイヤ(不図示)を介して半導体チップ124に電気的に接続されている。   As shown in FIGS. 12 and 13, the cylindrical contact member 110 includes a hollow cylindrical main body cylinder portion 101 and flanges 102 and 103 provided at both open ends 110 a and 110 b of the main body cylinder portion 101, respectively. . The flange 102 of one open end 110a of the cylindrical contact member 110 is joined to the conductive plate 122 on the front surface of the multilayer substrate 120 by solder (not shown). The multilayer substrate 120 is formed by forming a conductive plate 122 with a copper (Cu) foil on the front surface of a ceramic substrate 121 and forming a copper foil 123 on the back surface of the ceramic substrate 121. The cylindrical contact member 110 is electrically connected to the semiconductor chip 124 via a conductive plate 122 and a wire (not shown).

外部電極用端子125の一方の端部は、ケース126の貫通孔127からケース126の外側に突出している。外部電極用端子125の他方の端部は、筒状コンタクト部材110の本体筒部101(空洞部104)に圧入され、筒状コンタクト部材110に嵌め合わされることで固定されている。外部電極用端子125は、筒状コンタクト部材110を介して半導体チップ124に電気的に接続されている。外部電極用端子125は略正四角柱状をなし、その底面の最大寸法(対角線の長さ)d102は筒状コンタクト部材110の本体筒部101の内径(空洞部104の直径)d101よりも若干大きい(d101<d102)。筒状コンタクト部材110の本体筒部101の平面形状は、外部電極用端子125の底面の形状に合わせてわずかに変形している。   One end of the external electrode terminal 125 protrudes from the through hole 127 of the case 126 to the outside of the case 126. The other end of the external electrode terminal 125 is press-fitted into the main body cylinder portion 101 (cavity portion 104) of the cylindrical contact member 110 and is fixed by being fitted to the cylindrical contact member 110. The external electrode terminal 125 is electrically connected to the semiconductor chip 124 via the cylindrical contact member 110. The external electrode terminal 125 has a substantially regular quadrangular prism shape, and the maximum dimension (diagonal length) d102 of the bottom surface thereof is slightly larger than the inner diameter (diameter of the cavity 104) d101 of the main body cylindrical portion 101 of the cylindrical contact member 110. (D101 <d102). The planar shape of the main body cylinder portion 101 of the cylindrical contact member 110 is slightly deformed in accordance with the shape of the bottom surface of the external electrode terminal 125.

米国特許出願公開第2009/194884号明細書US Patent Application Publication No. 2009/194484

しかしながら、図12,13に示す筒状コンタクト部材110の本体筒部101に外部電極用端子125を圧入して嵌め合わせる構成の従来の半導体モジュールでは、次の問題が生じる。図10,11は、従来の半導体モジュールの組立途中の状態を模式的に示す断面図である。図10には、筒状コンタクト部材110を積層基板120上にはんだ付けした際に、はんだ上がり性(はんだ付け性)に起因して生じるはんだ付け不良の一例を示す。図11には、筒状コンタクト部材110の本体筒部101に外部電極用端子125を圧入する際に生じる不良の一例を示す。   However, in the conventional semiconductor module configured to press-fit and fit the external electrode terminal 125 into the main body cylinder portion 101 of the cylindrical contact member 110 shown in FIGS. 10 and 11 are cross-sectional views schematically showing a state in which a conventional semiconductor module is being assembled. FIG. 10 shows an example of a soldering failure that occurs due to solderability (solderability) when the cylindrical contact member 110 is soldered onto the laminated substrate 120. FIG. 11 shows an example of a defect that occurs when the external electrode terminal 125 is press-fitted into the main body cylinder portion 101 of the cylindrical contact member 110.

図10に示すように、筒状コンタクト部材110の一方の開放端110aのフランジ102を積層基板120上にはんだ128により接合する際に、はんだ128は毛細管現象によって本体筒部101の内壁110cまで這い上がる。このとき、筒状コンタクト部材110の空洞部104の形状によって、本体筒部101の内壁110cにはんだ128が這い上がりやすくなる。また、積層基板120上にペースト状のはんだ128を形成し、はんだ128上に筒状コンタクト部材110を設置し、リフロー炉で加熱することで、積層基板120と筒状コンタクト部材110とをはんだ接合する方法がある。この場合、リフロー炉内を減圧して、はんだ128に内在するガスを除去し、はんだ128内にボイドができないようにするが、リフロー炉内の減圧時、はんだ128に内在するガスが膨張した際に、はんだ128が飛散する場合がある。これらにより、筒状コンタクト部材110の一方の開放端110a側から他方の開放端110b(外部電極用端子125の挿入口)
側に本体筒部101の内壁110cをはんだ128aが這い上がり、例えば滑らかに広がらずに固まったような厚い状態で本体筒部101の内壁110cに残る虞がある。
As shown in FIG. 10, when the flange 102 of one open end 110a of the cylindrical contact member 110 is joined to the laminated substrate 120 by the solder 128, the solder 128 crawls up to the inner wall 110c of the main body cylinder portion 101 by a capillary phenomenon. Go up. At this time, depending on the shape of the hollow portion 104 of the cylindrical contact member 110, the solder 128 tends to creep up on the inner wall 110 c of the main body cylindrical portion 101. Further, paste solder 128 is formed on the multilayer substrate 120, the cylindrical contact member 110 is placed on the solder 128, and heated in a reflow furnace, so that the multilayer substrate 120 and the cylindrical contact member 110 are soldered together. There is a way to do it. In this case, the internal pressure of the solder 128 is removed by reducing the pressure in the reflow furnace so that no voids are formed in the solder 128. However, when the internal gas of the solder 128 expands when the internal pressure of the reflow furnace is reduced. In addition, the solder 128 may be scattered. As a result, one open end 110a side of the cylindrical contact member 110 to the other open end 110b (insertion port for the external electrode terminal 125).
There is a risk that the solder 128a will crawl up the inner wall 110c of the main body cylinder portion 101 on the side and remain on the inner wall 110c of the main body cylinder portion 101 in a thick state such as, for example, solidified without spreading smoothly.

はんだ128aの這い上がりが生じた場合、図11(a)に示すように、本体筒部101の内壁110cに付着したはんだ128aよりも奥(導電性板122側)まで外部電極用端子125を挿入することができない。また、外部電極用端子125の圧入時に、本体筒部101の内壁110cのはんだ128aが付着している箇所において外部電極用端子125に負荷がかかる。これにより、図11(b)に示すように、外部電極用端子125が曲がったり、折れたりしてしまう。または、本体筒部101の内壁110cにはんだ128aが付着した状態で、外部電極用端子125を挿入することにより、本体筒部101と導電性板122とを接合していたはんだ128が破損し、本体筒部101が導電性板122から取れてしまう虞がある。また、筒状コンタクト部材110から外部電極用端子125が抜けやすくなってしまう。このため、半導体チップ124と外部電極用端子125との接続不良が生じる虞がある。   When the solder 128a scoops up, as shown in FIG. 11A, the external electrode terminal 125 is inserted deeper (on the conductive plate 122 side) than the solder 128a attached to the inner wall 110c of the main body cylinder portion 101. Can not do it. Further, when the external electrode terminal 125 is press-fitted, a load is applied to the external electrode terminal 125 at a location where the solder 128a of the inner wall 110c of the main body cylinder portion 101 is attached. Accordingly, as shown in FIG. 11B, the external electrode terminal 125 is bent or broken. Alternatively, by inserting the external electrode terminal 125 with the solder 128a attached to the inner wall 110c of the main body cylinder portion 101, the solder 128 that joined the main body cylinder portion 101 and the conductive plate 122 is damaged, There is a possibility that the main body cylinder portion 101 may be removed from the conductive plate 122. Further, the external electrode terminal 125 is easily detached from the cylindrical contact member 110. For this reason, there is a possibility that poor connection between the semiconductor chip 124 and the external electrode terminal 125 may occur.

この発明は、上述した従来技術による問題点を解消するため、筒状コンタクト部材に外部電極用端子を挿入して嵌め合わせる構成の半導体装置において、組立不良をなくすことができる半導体装置、金属部材および半導体装置の製造方法を提供することを目的とする。   In order to eliminate the above-described problems caused by the prior art, the present invention provides a semiconductor device, a metal member, and a semiconductor device capable of eliminating assembly defects in a semiconductor device having a configuration in which an external electrode terminal is inserted and fitted into a cylindrical contact member. An object is to provide a method for manufacturing a semiconductor device.

上述した課題を解決し、本発明の目的を達成するため、この発明にかかる金属部材は、両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した、矩形状の断面形状をなす第1の突起部と、を有することを特徴とする。   In order to solve the above-described problems and achieve the object of the present invention, a metal member according to the present invention has open ends at both ends, and one of the open ends can be joined to a semiconductor chip or a conductive plate with solder. A hollow cylindrical tube portion into which an external electrode terminal can be inserted and fitted from the other of the open ends; and an inner wall on the one open end side of the tube portion; And a first protrusion having a rectangular cross-sectional shape projecting inward in the orthogonal direction.

また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる金属部材は、両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した、前記中心軸付近に向かうにしたがって厚さを薄くした三角形状または台形状の断面形状をなす第1の突起部と、を有することを特徴とする。   In order to solve the above-described problems and achieve the object of the present invention, a metal member according to the present invention has open ends at both ends, and one of the open ends is joined to a semiconductor chip or a conductive plate by solder. A hollow cylindrical tube portion into which an external electrode terminal can be inserted and fitted from the other of the open ends, and an inner wall on the one open end side of the tube portion, the center of the tube portion And a first protrusion having a triangular or trapezoidal cross-sectional shape projecting inwardly in a direction perpendicular to the axis and having a thickness that decreases toward the vicinity of the central axis.

また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる金属部材は、両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した第1の突起部と、を有し、前記筒部の前記一方の開放端側の内壁に固定されるように、前記第1の突起部を嵌め合わせてなることを特徴とする。   In order to solve the above-described problems and achieve the object of the present invention, a metal member according to the present invention has open ends at both ends, and one of the open ends is joined to a semiconductor chip or a conductive plate by solder. A hollow cylindrical tube portion into which an external electrode terminal can be inserted and fitted from the other of the open ends, and an inner wall on the one open end side of the tube portion, the center of the tube portion A first protrusion projecting inward in a direction orthogonal to the axis, and fitting the first protrusion so as to be fixed to the inner wall on the one open end side of the cylindrical portion. It is characterized by becoming.

また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる金属部材は、両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した第1の突起部と、を有する。前記第1の突起部は、前記筒部の側壁の一部を、前記筒部の前記一方の開放端側の内壁および外壁ともに内側に塑性変形させてなる。前記筒部の前記一方の開放端側の内壁および外壁が前記開放端から前記第1の突起部までが平坦かつ直線状であることを特徴とする。   In order to solve the above-described problems and achieve the object of the present invention, a metal member according to the present invention has open ends at both ends, and one of the open ends is joined to a semiconductor chip or a conductive plate by solder. A hollow cylindrical tube portion into which an external electrode terminal can be inserted and fitted from the other of the open ends, and an inner wall on the one open end side of the tube portion, the center of the tube portion A first protrusion projecting inward in a direction orthogonal to the axis. The first projecting portion is formed by plastically deforming a part of the side wall of the cylindrical portion inward along with the inner wall and the outer wall on the one open end side of the cylindrical portion. The inner wall and the outer wall on the one open end side of the cylindrical portion are flat and straight from the open end to the first protrusion.

また、この発明にかかる金属部材は、上述した発明において、半円形状または半楕円形状の断面形状をなす前記第1の突起部を有することを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the metal member has the first protrusion portion having a semicircular or semi-elliptical cross-sectional shape.

また、この発明にかかる金属部材は、上述した発明において、前記筒部の前記一方の開放端側の内壁の全周にわたる前記第1の突起部を有することを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the metal member has the first protrusion over the entire circumference of the inner wall on the one open end side of the cylindrical portion.

また、この発明にかかる金属部材は、上述した発明において、前記一方の開放端に、前記中心軸と直交する方向に外側に張り出したフランジを有することを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the one open end has a flange projecting outward in a direction orthogonal to the central axis.

また、この発明にかかる金属部材は、上述した発明において、前記第1の突起部の厚さは、0.1mm以上1.6mm以下であることを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the thickness of the first protrusion is not less than 0.1 mm and not more than 1.6 mm.

また、この発明にかかる金属部材は、上述した発明において、前記第1の突起部の幅wとの比率が0.2≦2×w/d≦0.8を満たす内径dを有することを特徴とする。   In the invention described above, the metal member according to the present invention has an inner diameter d that satisfies a ratio of 0.2 ≦ 2 × w / d ≦ 0.8 with respect to the width w of the first protrusion. And

また、この発明にかかる金属部材は、上述した発明において、前記第1の突起部を配置する高さは、前記はんだによる接合面から前記第1の突起部の前記接合面側の面までの高さが1mm以上であることを特徴とする。   Further, in the metal member according to the present invention, in the above-described invention, the height at which the first protrusion is disposed is a height from the joint surface by the solder to the surface on the joint surface side of the first protrusion. Is 1 mm or more.

また、この発明にかかる金属部材は、上述した発明において、前記筒部の前記他方の開放端側の内壁に、前記中心軸と直交する方向に内側に張り出した第2の突起部を有することを特徴とする。   In the above-described invention, the metal member according to the present invention has a second projecting portion projecting inward in a direction orthogonal to the central axis on the inner wall of the other open end side of the cylindrical portion. Features.

また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる金属部材は、両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した第1の突起部と、前記筒部の前記他方の開放端側の内壁に、前記中心軸と直交する方向に内側に張り出した第2の突起部と、を有する。前記筒部の前記他方の開放端側の内壁に固定されるように、前記第2の突起部を嵌め合わせてなることを特徴とする。   In order to solve the above-described problems and achieve the object of the present invention, a metal member according to the present invention has open ends at both ends, and one of the open ends is joined to a semiconductor chip or a conductive plate by solder. A hollow cylindrical tube portion into which an external electrode terminal can be inserted and fitted from the other of the open ends, and an inner wall on the one open end side of the tube portion, the center of the tube portion A first protrusion projecting inward in a direction orthogonal to the axis; a second protrusion projecting inward in the direction orthogonal to the central axis on the inner wall on the other open end side of the cylindrical portion; Have The second projecting portion is fitted together so as to be fixed to the inner wall on the other open end side of the cylindrical portion.

また、この発明にかかる金属部材は、上述した発明において、前記第2の突起部を配置する高さは、前記他方の開放端から前記第2の突起部の前記他方の開放端側の面までの高さが1mm以上であることを特徴とする。   Further, in the metal member according to the present invention, in the above-described invention, the height at which the second protrusion is disposed is from the other open end to the surface of the second open end of the second protrusion. The height is 1 mm or more.

また、この発明にかかる金属部材は、上述した発明において、前記筒部の前記一方の開放端側の内壁に固定されるように、前記第1の突起部を嵌め合わせてなることを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the first projecting portion is fitted so as to be fixed to the inner wall on the one open end side of the cylindrical portion. .

また、この発明にかかる金属部材は、上述した発明において、前記筒部の前記他方の開放端側の内壁に固定されるように、前記第2の突起部を嵌め合わせてなることを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the second projecting portion is fitted so as to be fixed to the inner wall of the other open end side of the cylindrical portion. .

また、この発明にかかる金属部材は、上述した発明において、前記第2の突起部は、前記筒部の側壁の一部を、前記筒部の前記他方の開放端側の内壁および外壁ともに内側に変形させてなる。前記筒部の前記他方の開放端側の内壁および外壁が前記開放端から前記第2の突起部までが平坦かつ直線状であることを特徴とする。   In the metal member according to the present invention, in the above-described invention, the second projecting portion may be configured such that a part of the side wall of the cylindrical portion is located inside both the inner wall and the outer wall on the other open end side of the cylindrical portion. Deformed. The inner wall and the outer wall on the other open end side of the cylindrical portion are flat and straight from the open end to the second protrusion.

また、この発明にかかる金属部材は、上述した発明において、半円形状または半楕円形状の断面形状をなす前記第2の突起部を有することを特徴とする。   The metal member according to the present invention is characterized in that, in the above-described invention, the second protrusion has a semicircular or semi-elliptical cross section.

また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる半導体装置は、前記半導体チップまたは前記導電性板に、上述した金属部材の前記一方の開放端がはんだにより接合されたことを特徴とする。   In order to solve the above-described problems and achieve the object of the present invention, the semiconductor device according to the present invention is such that the one open end of the metal member is joined to the semiconductor chip or the conductive plate by solder. It is characterized by that.

また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる半導体装置の製造方法は、前記半導体チップと、前記導電性板と、を絶縁基板上に実装した半導体装置の製造方法であって、次の特徴を有する。まず、前記半導体チップ上または前記導電性板上に、上述した金属部材の前記一方の開放端を、はんだにより接合する第1工程を行う。次に、前記金属部材の前記他方の開放端から前記外部電極用端子を圧入して、前記金属部材に前記外部電極用端子を嵌め合わせる第2工程を行う。   In order to solve the above-described problems and achieve the object of the present invention, a semiconductor device manufacturing method according to the present invention includes a semiconductor device in which the semiconductor chip and the conductive plate are mounted on an insulating substrate. A manufacturing method having the following characteristics. First, a first step of joining the one open end of the metal member described above on the semiconductor chip or the conductive plate with solder is performed. Next, a second step of press-fitting the external electrode terminal from the other open end of the metal member and fitting the external electrode terminal to the metal member is performed.

また、この発明にかかる半導体装置の製造方法は、上述した発明において、端部の尖った前記外部電極用端子を圧入することを特徴とする。   Also, the method of manufacturing a semiconductor device according to the present invention is characterized in that, in the above-described invention, the external electrode terminal having a sharp end is press-fitted.

上述した発明によれば、金属部材のはんだ付け時に、金属部材の内壁を這い上がったり飛散したはんだが突起部よりも上方側(絶縁基板上の導電性板に接合されていない他方の端部側)まで這い上がることを防止することができる。これにより、金属部材の内壁を這い上がったり飛散したはんだを金属部材の下端側(絶縁基板上の導電性板に接合された一方の端部側)で塞き止めることができる。このため、金属部材に外部電極用端子を挿入するときに、外部電極用端子にはんだによる負荷がかかることはない、または外部電極用端子にかかる負荷は無視できるほど小さい。これによって、金属部材の内壁に這い上がったり飛散したはんだを原因として、外部電極用端子を所定深さまで挿入することができなかったり、外部電極用端子が曲がったり折れたりすることを防止することができる。   According to the above-described invention, when the metal member is soldered, the solder that scoops up or scatters the inner wall of the metal member is above the protrusion (the other end side not joined to the conductive plate on the insulating substrate). Can be prevented from climbing up. Thereby, the solder which scooped up or scattered the inner wall of the metal member can be blocked at the lower end side (one end side joined to the conductive plate on the insulating substrate) of the metal member. For this reason, when the external electrode terminal is inserted into the metal member, no load is applied to the external electrode terminal by the solder, or the load applied to the external electrode terminal is negligibly small. Accordingly, it is possible to prevent the external electrode terminal from being inserted to a predetermined depth or the external electrode terminal from being bent or broken due to the solder that has creeped up or scattered on the inner wall of the metal member. .

本発明にかかる半導体装置、金属部材および半導体装置の製造方法によれば、筒状コンタクト部材に外部電極用端子を挿入して嵌め合わせる構成の半導体装置において、組立不良をなくすことができるという効果を奏する。   According to the semiconductor device, the metal member, and the manufacturing method of the semiconductor device according to the present invention, it is possible to eliminate the assembly failure in the semiconductor device configured to insert and fit the external electrode terminal into the cylindrical contact member. Play.

実施の形態1にかかる半導体装置の構成を示す説明図である。1 is an explanatory diagram illustrating a configuration of a semiconductor device according to a first embodiment; 実施の形態1にかかる半導体装置の要部の構成を詳細に示す説明図である。2 is an explanatory diagram illustrating in detail a configuration of a main part of the semiconductor device according to the first embodiment; FIG. 実施の形態2にかかる半導体装置の構成を示す断面図である。FIG. 6 is a cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment. 実施の形態3にかかる半導体装置の構成を示す断面図である。FIG. 7 is a cross-sectional view illustrating a configuration of a semiconductor device according to a third embodiment. 実施の形態4にかかる半導体装置の構成を示す断面図である。FIG. 6 is a cross-sectional view showing a configuration of a semiconductor device according to a fourth embodiment. 実施例1にかかる半導体装置の突起部の幅について検証した結果を示す図表である。6 is a chart showing results of verifying the width of a protrusion of a semiconductor device according to Example 1; 実施例2にかかる半導体装置の突起部の厚さについて検証した結果を示す図表である。10 is a chart showing results of verifying the thickness of the protrusions of the semiconductor device according to Example 2; 実施例3にかかる半導体装置の突起部を配置する高さの下限値について検証した結果を示す図表である。It is a graph which shows the result verified about the lower limit of the height which arrange | positions the projection part of the semiconductor device concerning Example 3. FIG. 実施例3にかかる半導体装置の突起部を配置する高さの上限値について検証した結果を示す図表である。12 is a chart showing results of verifying an upper limit value of a height at which a protrusion of a semiconductor device according to Example 3 is arranged. 従来の半導体モジュールの組立途中の状態を模式的に示す断面図である。It is sectional drawing which shows typically the state in the middle of the assembly of the conventional semiconductor module. 従来の半導体モジュールの組立途中の状態を模式的に示す断面図である。It is sectional drawing which shows typically the state in the middle of the assembly of the conventional semiconductor module. 従来の半導体モジュールの要部の構成を示す断面図である。It is sectional drawing which shows the structure of the principal part of the conventional semiconductor module. 従来の半導体モジュールの要部の構成を示す平面図である。It is a top view which shows the structure of the principal part of the conventional semiconductor module.

以下に添付図面を参照して、この発明にかかる半導体装置、金属部材および半導体装置の製造方法の好適な実施の形態を詳細に説明する。なお、以下の実施の形態の説明および添付図面において、同様の構成には同一の符号を付し、重複する説明を省略する。   Exemplary embodiments of a semiconductor device, a metal member, and a method for manufacturing a semiconductor device according to the present invention will be explained below in detail with reference to the accompanying drawings. Note that, in the following description of the embodiments and the accompanying drawings, the same reference numerals are given to the same components, and duplicate descriptions are omitted.

(実施の形態1)
実施の形態1にかかる半導体装置の構成について説明する。図1は、実施の形態1にかかる半導体装置の構成を示す説明図である。図2は、実施の形態1にかかる半導体装置の要部の構成を詳細に示す説明図である。図1(b)には、図1(a)の切断線X−X'における断面で切断し、当該断面から積層基板20の奥行方向を見たときの状態を示す。なお、図1では積層基板20のおもて面側を覆うケースを図示省略する。図1(a)では、図1(b)のワイヤー26を図示省略する。図2(a)は、導電性板22に接合された筒状コンタクト部材10の断面構造を示す断面図である。図2(b)は、図2(a)の筒状コンタクト部材10を開放端10b側から見たときの平面構造を示す平面図である。図2(c)は、筒状コンタクト部材10の本体筒部1に外部電極用端子25を嵌め合わせた状態を示す断面図である。図2(d)は、図2(c)の切断面X2から積層基板20側を見たときの筒状コンタクト部材10の空洞部4および外部電極用端子25の平面形状を示す平面図である。
(Embodiment 1)
A configuration of the semiconductor device according to the first embodiment will be described. FIG. 1 is an explanatory diagram of a configuration of the semiconductor device according to the first embodiment. FIG. 2 is an explanatory diagram illustrating in detail a configuration of a main part of the semiconductor device according to the first embodiment. FIG. 1B shows a state in which the depth direction of the laminated substrate 20 is viewed from the cross section taken along the section line XX ′ in FIG. In FIG. 1, a case covering the front surface side of the multilayer substrate 20 is not shown. In FIG. 1A, the wire 26 of FIG. 1B is not shown. FIG. 2A is a cross-sectional view showing a cross-sectional structure of the cylindrical contact member 10 joined to the conductive plate 22. FIG. 2B is a plan view showing a planar structure when the cylindrical contact member 10 of FIG. 2A is viewed from the open end 10b side. FIG. 2C is a cross-sectional view showing a state in which the external electrode terminal 25 is fitted to the main body cylinder portion 1 of the cylindrical contact member 10. FIG. 2D is a plan view showing the planar shapes of the hollow portion 4 of the cylindrical contact member 10 and the external electrode terminal 25 when the laminated substrate 20 side is viewed from the cut surface X2 of FIG. .

図1に示す実施の形態1にかかる半導体装置は、積層基板20のおもて面の導電性板22に、設計条件に基づく所定の平面レイアウトに半導体チップ24や他の構成部材などをはんだ(不図示)により接合した構成の半導体モジュールである。具体的には、実施の形態1にかかる半導体装置は、積層基板20上の半導体チップ24または導電性板22に、筒状コンタクト部材10の一方の開放端10aをはんだ27により接合され、他方の開放端10bから外部電極用端子25が挿入され嵌め合わされた半導体装置である。積層基板20は、例えば、絶縁基板21のおもて面に銅(Cu)箔により導電性板22を形成し、絶縁基板21の裏面に銅箔23を形成する。なお、絶縁基板21には、アルミナや窒化アルミニウムなどのセラミックが用いられる。積層基板20の裏面の銅箔23は、例えばヒートシンク(不図示)にはんだ接合されている。積層基板20のおもて面の導電性板22には、半導体チップ24および筒状コンタクト部材(金属部材)10が配置されている。
半導体チップ24の裏面電極(不図示)は導電性板22にはんだ(不図示)により接合される。半導体チップ24にはおもて電極(不図示)が設けられ、おもて面電極はワイヤー26を介して導電性板22に電気的に接続されている。また、半導体チップ24のおもて電極は、はんだ27を介して筒状コンタクト部材10の一方の開放端と接合されていてもよい。
The semiconductor device according to the first embodiment shown in FIG. 1 solders a semiconductor chip 24 and other components to a conductive plate 22 on the front surface of the multilayer substrate 20 in a predetermined planar layout based on design conditions ( It is a semiconductor module having a structure joined by (not shown). Specifically, in the semiconductor device according to the first embodiment, one open end 10a of the cylindrical contact member 10 is joined to the semiconductor chip 24 or the conductive plate 22 on the multilayer substrate 20 by the solder 27, and the other This is a semiconductor device in which an external electrode terminal 25 is inserted and fitted from the open end 10b. In the multilayer substrate 20, for example, a conductive plate 22 is formed from a copper (Cu) foil on the front surface of the insulating substrate 21, and a copper foil 23 is formed on the back surface of the insulating substrate 21. The insulating substrate 21 is made of ceramic such as alumina or aluminum nitride. The copper foil 23 on the back surface of the multilayer substrate 20 is soldered to, for example, a heat sink (not shown). A semiconductor chip 24 and a cylindrical contact member (metal member) 10 are disposed on the conductive plate 22 on the front surface of the multilayer substrate 20.
A back electrode (not shown) of the semiconductor chip 24 is joined to the conductive plate 22 by solder (not shown). The semiconductor chip 24 is provided with a front electrode (not shown), and the front surface electrode is electrically connected to the conductive plate 22 via a wire 26. The front electrode of the semiconductor chip 24 may be joined to one open end of the cylindrical contact member 10 via the solder 27.

図2に示すように、筒状コンタクト部材10は、中空筒状の本体筒部1と、本体筒部1の両開放端10a,10bにそれぞれ設けられたフランジ(輪縁)2,3と、本体筒部1の内部(空洞部4)に設けられた突起部5と、を備えた金属部材である。筒状コンタクト部材10の材質は、導電性の優れた材料で、所定の強度を満足し、はんだ27との接合性の優れた材料が望ましい。特に好ましくは、筒状コンタクト部材10の材質は例えば銅乃至銅合金である。また、筒状コンタクト部材10の本体筒部1の表面(内壁10cや外壁)に銅めっきやニッケル(Ni)めっきを施してもよい。筒状コンタクト部材10は、導電性板22上にはんだ付けされており、導電性板22およびワイヤー26を介して半導体チップ24のおもて面電極に電気的に接続されている。筒状コンタクト部材10は、半導体チップ24のおもて面電極に直にはんだ接合されてもよい。筒状コンタクト部材10の本体筒部1には外部電極用端子25が嵌め合わせられ、筒状コンタクト部材10を介して半導体チップ24のおもて面電極と電気的に接続されている。   As shown in FIG. 2, the cylindrical contact member 10 includes a hollow cylindrical main body cylinder portion 1, flanges (ring edges) 2 and 3 provided at both open ends 10 a and 10 b of the main body cylinder portion 1, and And a protrusion 5 provided inside the main body cylinder portion 1 (cavity portion 4). The material of the cylindrical contact member 10 is preferably a material having excellent conductivity, satisfying a predetermined strength, and having excellent bonding properties with the solder 27. Particularly preferably, the cylindrical contact member 10 is made of, for example, copper or a copper alloy. Moreover, you may give copper plating and nickel (Ni) plating to the surface (inner wall 10c and outer wall) of the main body cylinder part 1 of the cylindrical contact member 10. FIG. The cylindrical contact member 10 is soldered onto the conductive plate 22 and is electrically connected to the front surface electrode of the semiconductor chip 24 via the conductive plate 22 and the wire 26. The cylindrical contact member 10 may be soldered directly to the front surface electrode of the semiconductor chip 24. External electrode terminals 25 are fitted into the main body cylinder portion 1 of the cylindrical contact member 10 and are electrically connected to the front surface electrode of the semiconductor chip 24 via the cylindrical contact member 10.

具体的には、本体筒部1は、外部電極用端子25を安定して固定可能な所定長さの中空筒状をなす。本体筒部1の内径(空洞部4の直径)d1は、外部電極用端子25を嵌め合わせることができる程度に、外部電極用端子25の直径d2よりも若干大きい。フランジ2,3は、本体筒部1の両開放端10a,10bからそれぞれ本体筒部1の中心軸と直交する方向(図2の横方向)に外側に所定幅で張り出したリング状(鍔状)をなし、本体筒部1の外壁の例えば全周にわたって設けられている。本体筒部1の一方の開放端10aのフランジ2は、積層基板20のおもて面の導電性板22上にはんだ27により接合されている。本体筒部1の、導電性板22とはんだ接合される側の開放端10aのみにフランジ2が設けられてもよい。これにより、後述するように本体筒部1の一方の開放端10a側に配置された突起部5の位置をフランジ2の有無によって確認することができ、筒状コンタクト部材10をはんだ接合する際の方向性の選択が容易となる。一方、本体筒部1の両開放端10a,10bにそれぞれフランジ2,3を設けることで、筒状コンタクト部材10の形成時に方向性を選ばずに突起部5を取付け可能な構造となるため、筒状コンタクト部材10を形成するときの作業効率が向上する。筒状コンタクト部材10の形成方法については後述する。   Specifically, the main body cylinder portion 1 has a hollow cylinder shape having a predetermined length capable of stably fixing the external electrode terminal 25. The inner diameter (diameter of the cavity 4) d1 of the main body cylinder portion 1 is slightly larger than the diameter d2 of the external electrode terminal 25 to such an extent that the external electrode terminal 25 can be fitted. The flanges 2 and 3 are ring-shaped (gutter-shaped) projecting outward from the open ends 10a and 10b of the main body cylinder portion 1 to the outside in a direction orthogonal to the central axis of the main body cylinder portion 1 (lateral direction in FIG. 2). ), And is provided, for example, over the entire circumference of the outer wall of the main body cylinder portion 1. The flange 2 at one open end 10 a of the main body cylinder portion 1 is joined to the conductive plate 22 on the front surface of the multilayer substrate 20 by solder 27. The flange 2 may be provided only on the open end 10a of the main body cylinder portion 1 on the side to be soldered to the conductive plate 22. Thereby, as will be described later, the position of the protruding portion 5 arranged on the one open end 10a side of the main body cylindrical portion 1 can be confirmed by the presence or absence of the flange 2, and when the cylindrical contact member 10 is joined by soldering The directionality can be easily selected. On the other hand, by providing the flanges 2 and 3 at both open ends 10a and 10b of the main body cylindrical portion 1, respectively, the projecting portion 5 can be attached without selecting the directionality when the cylindrical contact member 10 is formed. The work efficiency when forming the cylindrical contact member 10 is improved. A method for forming the cylindrical contact member 10 will be described later.

筒状コンタクト部材10(本体筒部1)の一方の開放端10a(筒状コンタクト部材10の下端)は、導電性板22上へのはんだ付けにより閉塞されている。すなわち、筒状コンタクト部材10の一方開放端10aの端面ははんだ27との接合面となる。なお、筒状コンタクト部材10の一方の開放端10aは、はんだ27によって完全に閉塞されていなくてもよいが、フランジ2と導電性板22とははんだ付けされていることが望ましい。筒状コンタクト部材10(本体筒部1)の他方の開放端10b(筒状コンタクト部材10の上端)は開放され、外部電極用端子25の挿入口となっている。突起部5は、筒状コンタクト部材10の一方の開放端10a側に配置されている。また、図2(b)に示すように、突起部5は、本体筒部1の内壁10cから本体筒部1の中心軸と直交する方向に内側に例えば所定幅w1で張り出したリング状をなし、本体筒部1の内壁10cの全周にわたって設けられている。この突起部5を境に、筒状コンタクト部材10の空洞部4は、突起部5よりも筒状コンタクト部材10の他方の開放端10b側の第1領域Aと、突起部5よりも筒状コンタクト部材10の一方の開放端10a側の第2領域Bとに分離されている。なお、突起部5は、本体筒部1とは別の部材により形成されてもよいし、本体筒部1を変形させて形成されてもよい。本体筒部1を変形させて形成した突起部5の一例については後述する実施の形態3において説明する。   One open end 10a (lower end of the cylindrical contact member 10) of the cylindrical contact member 10 (main body cylindrical portion 1) is closed by soldering onto the conductive plate 22. That is, the end surface of the one open end 10 a of the cylindrical contact member 10 becomes a joint surface with the solder 27. One open end 10a of the cylindrical contact member 10 may not be completely closed by the solder 27, but the flange 2 and the conductive plate 22 are preferably soldered. The other open end 10 b (upper end of the cylindrical contact member 10) of the cylindrical contact member 10 (main body cylindrical portion 1) is opened and serves as an insertion port for the external electrode terminal 25. The protrusion 5 is disposed on the one open end 10 a side of the cylindrical contact member 10. Further, as shown in FIG. 2B, the protrusion 5 has a ring shape projecting from the inner wall 10c of the main body cylinder 1 to the inside in a direction orthogonal to the central axis of the main body cylinder 1 with a predetermined width w1, for example. The main body cylinder portion 1 is provided over the entire circumference of the inner wall 10c. The hollow portion 4 of the cylindrical contact member 10 is formed in the first region A on the other open end 10b side of the cylindrical contact member 10 from the protruding portion 5 and from the protruding portion 5 to the cylindrical shape. The contact member 10 is separated from the second region B on one open end 10a side. The protrusion 5 may be formed of a member different from the main body cylinder 1 or may be formed by deforming the main body cylinder 1. An example of the protrusion 5 formed by deforming the main body cylinder 1 will be described in a third embodiment to be described later.

突起部5は、筒状コンタクト部材10のはんだ付け時に、毛細管現象により本体筒部1の内壁10cに這い上がったり、飛散したはんだ27aが筒状コンタクト部材10の上端側の第1領域Aまで這い上がったり、飛散することを防止する機能を有する。はんだ27aの這い上がりおよび飛散防止とは、筒状コンタクト部材10の下端側から第1領域Aまではんだ27aが這い上がったり飛散しない、または第1領域Aまではんだ27aが這い上がったり、飛散したとしても外部電極用端子25の挿入時に組立不良を生じさせない程度であることをいう。外部電極用端子25の挿入時に生じる組立不良とは、外部電極用端子25を所定深さまで挿入することができないことや、挿入時に外部電極用端子25が曲がったり折れたりしてしまうことである。また、突起部5は、本体筒部1の内壁10cに這い上がったり飛散したはんだ27aを筒状コンタクト部材10の下端側の第2領域B内にほぼ塞き止める機能を有する。すなわち、突起部5は、筒状コンタクト部材10と導電性板22とを接合するはんだ27が破損し、本体筒部1が導電性板22から取れてしまうことを防止する。そのため、突起部5は、本体筒部1の内壁10cの全周にわたって設けられていることが好ましいが、はんだ27aが這い上がったり飛散することを防ぐことができれば、全周にわたって設けられていなくてもかまわない。   When the cylindrical contact member 10 is soldered, the protruding portion 5 crawls up to the inner wall 10c of the main body cylindrical portion 1 due to a capillary phenomenon, or the scattered solder 27a crawls up to the first region A on the upper end side of the cylindrical contact member 10. , Has a function to prevent scattering. The solder 27a creeps up and is prevented from scattering even if the solder 27a does not creep up or scatter from the lower end side of the cylindrical contact member 10 to the first region A, or even if the solder 27a crawls up or scatters to the first region A. It means that it does not cause assembly failure when the electrode terminal 25 is inserted. The assembly failure that occurs when the external electrode terminal 25 is inserted means that the external electrode terminal 25 cannot be inserted to a predetermined depth, or the external electrode terminal 25 is bent or broken during insertion. Further, the protruding portion 5 has a function of substantially blocking the solder 27 a that has been scooped up or scattered on the inner wall 10 c of the main body cylindrical portion 1 in the second region B on the lower end side of the cylindrical contact member 10. That is, the protruding portion 5 prevents the solder 27 that joins the cylindrical contact member 10 and the conductive plate 22 from being damaged and the main body cylindrical portion 1 from being removed from the conductive plate 22. Therefore, it is preferable that the protrusion 5 is provided over the entire circumference of the inner wall 10c of the main body cylinder portion 1. However, if the solder 27a can be prevented from scooping up and scattering, the protrusion 5 may not be provided over the entire circumference. It doesn't matter.

突起部5の幅w1は、本体筒部1の内径d1の1/2倍よりも狭いことがよい。具体的には、突起部5の幅w1は、本体筒部1の内径d1に対して、0.2≦2×w1/d1≦0.8を満たすことが好ましい。すなわち、突起部5は、本体筒部1の内壁10cを分離することができればよく、本体筒部1の内径d1と同じ寸法の外径を有し、かつ例えば本体筒部1の中心軸付近に位置する略円形状の孔部5aによる所定の内径w2を有するリング状の平面形状をなす。したがって、第1領域Aと第2領域Bとの間は突起部5によって完全に塞がれておらず、第1領域Aと第2領域Bとは連続した領域となっている。   The width w1 of the protrusion 5 is preferably narrower than ½ times the inner diameter d1 of the main body cylinder 1. Specifically, the width w1 of the protrusion 5 preferably satisfies 0.2 ≦ 2 × w1 / d1 ≦ 0.8 with respect to the inner diameter d1 of the main body cylinder portion 1. That is, the protrusion 5 only needs to be able to separate the inner wall 10c of the main body cylinder 1 and has the same outer diameter as the inner diameter d1 of the main body cylinder 1 and, for example, near the central axis of the main body cylinder 1 The ring-shaped planar shape which has the predetermined internal diameter w2 by the substantially circular hole 5a located is made. Therefore, the first region A and the second region B are not completely closed by the protrusion 5, and the first region A and the second region B are continuous regions.

仮に、円形状の平面形状を有する突起部5によって第1領域Aと第2領域Bとの間を完全に塞いだ場合(w2=0)、筒状コンタクト部材10のはんだ付け時に発生するはんだフラックス等の溶融ガス(気体)を筒状コンタクト部材10の外側に逃がすことができない。この溶融ガスは、はんだ27の内部にボイド(気泡)を生じさせ、はんだ不良を生じさせる原因となる。このため、第1領域Aと第2領域Bとを本体筒部1の中心軸に平行な方向につなげて、筒状コンタクト部材10の他方の開放端10bから外側に溶融ガスが流動可能な幅の孔(以下、孔部とする)5aの空いたリング状の平面形状に突起部5を設けることが好ましい。   If the space between the first region A and the second region B is completely closed by the projection 5 having a circular planar shape (w2 = 0), the solder flux generated when soldering the cylindrical contact member 10 The molten gas (gas) such as can not escape to the outside of the cylindrical contact member 10. This molten gas causes voids (bubbles) inside the solder 27 and causes a solder failure. For this reason, the first region A and the second region B are connected in a direction parallel to the central axis of the main body cylinder portion 1, and the width in which the molten gas can flow outward from the other open end 10 b of the cylindrical contact member 10. It is preferable to provide the protrusion 5 in a ring-shaped planar shape with a hole 5a (hereinafter referred to as a hole).

突起部5の孔部5aは、例えば円形状の平面形状を有する。突起部5の内径(孔部5aの幅(直径))w2は、筒状コンタクト部材10のはんだ付け時に発生する溶融ガスを、筒状コンタクト部材10の他方の開放端10bから外側に十分に逃がすことができる寸法とすることが好ましい。突起部5の孔部5aの位置、寸法および平面形状は、第1領域Aと第2領域Bとを本体筒部1の中心軸に平行な方向につながった領域とすることができ、かつ筒状コンタクト部材10のはんだ付け時に発生する溶融ガスを筒状コンタクト部材10の外側に十分に逃がすことができる所定面積を有していればよく、種々変更可能である。   The hole 5a of the protrusion 5 has, for example, a circular planar shape. The inner diameter of the protrusion 5 (the width (diameter) of the hole 5a) w2 allows the molten gas generated during soldering of the cylindrical contact member 10 to sufficiently escape from the other open end 10b of the cylindrical contact member 10 to the outside. It is preferable that the dimension be able to be adjusted. The position, size, and planar shape of the hole 5a of the protrusion 5 can be a region in which the first region A and the second region B are connected in a direction parallel to the central axis of the main body tube portion 1, and the tube As long as it has a predetermined area that allows the molten gas generated during soldering of the cylindrical contact member 10 to sufficiently escape to the outside of the cylindrical contact member 10, various modifications can be made.

また、突起部5は、本体筒部1の中心軸と直交する方向に一様な厚さt1の略矩形状の断面形状を有する。突起部5の断面形状を略矩形状とすることで、所定の強度を有することができる。また、突起部5の断面形状を略矩形状とした場合、突起部5の形状が単純であるため、筒状コンタクト部材10を安価に作成することができる。突起部5の厚さt1は、筒状コンタクト部材10の本体筒部1に外部電極用端子25を圧入(挿入)するときの荷重によって突起部5が容易に変形する厚さに設定されていることが好ましい。すなわち、突起部5の厚さt1は、外部電極用端子25の挿入時の荷重によって例えば突起部5の孔部5aを広げ、変形させることができる厚さとする。具体的には、突起部5の厚さt1は、突起部5の構成材料や内径w2、形成方法によって種々調整可能であり、例えば0.1mm以上1.6mm以下程度であってもよい(0.1mm≦t1≦1.6mm)。図2(d)に示すように、外部電極用端子25の切断面XYでの平面形状(外部電極用端子25の底面の形状)は例えば略四角形状であってもよい。これにより、筒状コンタクト部材10の本体筒部1に外部電極用端子25を強固に嵌め合わせることができる。外部電極用端子25の下端部(積層基板20側の端部)25aは、面取りされていたり、尖っていることが望ましい。その理由は、筒状コンタクト部材10の本体筒部1に外部電極用端子25を圧入(挿入)するときに、外部電極用端子25の下端部25aによって突起部5を容易に変形させやすいからである。   Further, the protruding portion 5 has a substantially rectangular cross-sectional shape having a uniform thickness t1 in a direction orthogonal to the central axis of the main body cylindrical portion 1. By making the cross-sectional shape of the protrusion 5 substantially rectangular, it is possible to have a predetermined strength. Moreover, when the cross-sectional shape of the projection part 5 is made into a substantially rectangular shape, since the shape of the projection part 5 is simple, the cylindrical contact member 10 can be produced cheaply. The thickness t1 of the protruding portion 5 is set to a thickness at which the protruding portion 5 can be easily deformed by a load when the external electrode terminal 25 is press-fitted (inserted) into the main body cylindrical portion 1 of the cylindrical contact member 10. It is preferable. That is, the thickness t1 of the protruding portion 5 is set to a thickness that allows the hole 5a of the protruding portion 5 to be expanded and deformed by a load when the external electrode terminal 25 is inserted. Specifically, the thickness t1 of the protrusion 5 can be variously adjusted depending on the constituent material, the inner diameter w2, and the forming method of the protrusion 5, and may be, for example, about 0.1 mm to 1.6 mm (0 .1 mm ≦ t1 ≦ 1.6 mm). As shown in FIG. 2D, the planar shape (the shape of the bottom surface of the external electrode terminal 25) on the cut surface XY of the external electrode terminal 25 may be, for example, a substantially square shape. Accordingly, the external electrode terminal 25 can be firmly fitted to the main body cylinder portion 1 of the cylindrical contact member 10. The lower end portion (end portion on the laminated substrate 20 side) 25a of the external electrode terminal 25 is preferably chamfered or pointed. The reason is that, when the external electrode terminal 25 is press-fitted (inserted) into the main body cylindrical portion 1 of the cylindrical contact member 10, the protruding portion 5 is easily deformed by the lower end portion 25 a of the external electrode terminal 25. is there.

突起部5を配置する高さh1は、筒状コンタクト部材10の一方の開放端10aのフランジ2の下面(積層基板20側の表面)から突起部5の下面までの高さが例えば1mm以上程度となる高さであることが好ましい(h1≧1mm)。その理由は、次の通りである。筒状コンタクト部材10に嵌め合わされたときの外部電極用端子25の下端部25aの高さh2は、筒状コンタクト部材10の一方の開放端10aのフランジ2の下面から例えば0.5mm以上2.0mm以下程度となる。このため、突起部5を配置する高さh1を1mm以上程度とすることで、本体筒部1の内壁10cにはんだ27aが這い上がったり飛散したとしても、外部電極用端子25の下端部25aまでの隙間内ではんだ27aの這い上がりや飛散を止めることができるからである。すなわち、突起部5を配置する高さh1は、本体筒部1の所定深さまで挿入された外部電極用端子25の下端部25aとの間に隙間ができるように、本体筒部1の内壁10cに這い上がったり飛散したはんだ27aを塞き止め可能な高さに設定されている。なお、フランジ2,3が配置されていない場合には、突起部5を配置する高さh1は、筒状コンタクト部材10の一方の開放端10aの端面から突起部5の下面までの高さである。   The height h1 at which the protrusion 5 is disposed is such that the height from the lower surface of the flange 2 (the surface on the laminated substrate 20 side) of one open end 10a of the cylindrical contact member 10 to the lower surface of the protrusion 5 is, for example, about 1 mm or more. The height is preferably (h1 ≧ 1 mm). The reason is as follows. The height h2 of the lower end portion 25a of the external electrode terminal 25 when fitted to the cylindrical contact member 10 is, for example, 0.5 mm or more from the lower surface of the flange 2 of one open end 10a of the cylindrical contact member 10. It is about 0 mm or less. For this reason, even if the solder 27a crawls up or scatters on the inner wall 10c of the main body cylinder part 1 by setting the height h1 at which the protrusion part 5 is arranged to be about 1 mm or more, it reaches the lower end part 25a of the external electrode terminal 25. This is because the creeping and scattering of the solder 27a can be stopped in the gap. That is, the height h1 at which the protruding portion 5 is arranged has an inner wall 10c of the main body cylinder portion 1 so that a gap is formed between the lower end portion 25a of the external electrode terminal 25 inserted to a predetermined depth of the main body cylinder portion 1. The height is set so that the solder 27a creeping up or scattered can be blocked. When the flanges 2 and 3 are not disposed, the height h1 at which the protrusion 5 is disposed is a height from the end surface of one open end 10a of the cylindrical contact member 10 to the lower surface of the protrusion 5. is there.

また、突起部5を配置する高さh1は、外部電極用端子25の下端部25aの高さh2に対して、h1≦2×h2を満たすことが好ましい。具体的には、突起部5を配置する高さh1は、例えば4mm以下程度であることが好ましい(h1≦4mm)。突起部5を配置する高さh1を4mmよりも大きくした場合、空洞部4に占める第2領域B(はんだ27aが這い上がったり飛散する領域)の割合が大きくなり、かつ外部電極用端子25の第2領域Bに露出される部分の割合も大きくなる。このため、第2領域B内ではんだ27aの這い上がりや飛散を塞き止めたとしても、第2領域B内に這い上がったり飛散したはんだ27aによる悪影響が外部電極用端子25に及ぶことを抑制することができないからである。したがって、突起部5を配置する高さh1は、1≦h1≦2×h2を満たすことが好ましい。   In addition, the height h1 at which the protruding portion 5 is disposed preferably satisfies h1 ≦ 2 × h2 with respect to the height h2 of the lower end portion 25a of the external electrode terminal 25. Specifically, the height h1 at which the protrusion 5 is disposed is preferably about 4 mm or less (h1 ≦ 4 mm), for example. When the height h1 at which the protrusion 5 is disposed is larger than 4 mm, the ratio of the second region B (the region in which the solder 27a crawls up or scatters) in the cavity 4 increases, and the external electrode terminal 25 has a second height. The ratio of the part exposed to 2 area | region B also becomes large. For this reason, even if the creeping and scattering of the solder 27a are blocked in the second region B, the adverse effect of the solder 27a creeping and scattering in the second region B is prevented from reaching the external electrode terminal 25. Because you can't. Therefore, it is preferable that the height h1 at which the protrusions 5 are disposed satisfies 1 ≦ h1 ≦ 2 × h2.

このように、突起部5は、筒状コンタクト部材10のはんだ付け時にはんだ27aの這い上がりや飛散を第2領域B内に塞き止め可能な幅w1を有し、かつ外部電極用端子25の挿入時に妨げにならない厚さt1を有する。また、突起部5は、筒状コンタクト部材10の下端から第2領域B内に這い上がったり飛散したはんだ27aの悪影響が外部電極用端子25に及ばない高さh1に配置される。突起部5の構成材料は、筒状コンタクト部材10の本体筒部1と同じ金属材料であることが好ましい。その理由は、導電性、強度ともに優れているからである。また、筒状コンタクト部材10と突起部5とを異種材料とした場合、筒状コンタクト部材10と突起部5との接合部において、電気抵抗が増加したり、応力による割れが生じる虞があるからである。しかし、突起部5の構成材料は、突起部5の形成方法によっては本体筒部1と異なる材料であってもよいし、カーボンやセラミックスなどはんだ濡れ性の悪い材料であってもよい。なお、筒状コンタクト部材10と突起部5とを異種材料とする場合、突起部5の構成材料は、封止材と反応せず、はんだ接合時の加熱に耐えられる材料であることが望ましい。   In this manner, the protrusion 5 has a width w1 that can block the scooping up and scattering of the solder 27a in the second region B when the cylindrical contact member 10 is soldered, and the external electrode terminal 25 It has a thickness t1 that does not hinder the insertion. Further, the protruding portion 5 is arranged at a height h 1 at which the adverse effect of the solder 27 a that crawls up or scatters in the second region B from the lower end of the cylindrical contact member 10 does not reach the external electrode terminal 25. The constituent material of the protruding portion 5 is preferably the same metal material as that of the main body cylindrical portion 1 of the cylindrical contact member 10. The reason is that both conductivity and strength are excellent. In addition, when the cylindrical contact member 10 and the protrusion 5 are made of different materials, there is a risk that electrical resistance increases or cracking due to stress occurs at the joint between the cylindrical contact member 10 and the protrusion 5. It is. However, the constituent material of the protrusion 5 may be a material different from that of the main body cylinder 1 depending on the method of forming the protrusion 5, or may be a material having poor solder wettability such as carbon or ceramics. When the cylindrical contact member 10 and the protrusion 5 are made of different materials, it is desirable that the constituent material of the protrusion 5 is a material that does not react with the sealing material and can withstand heating during solder bonding.

上述した実施の形態1にかかる半導体装置を作製(製造)するには、まず、絶縁基板21上に実装した半導体チップ24上または導電性板22上に、筒状コンタクト部材10の一方の開放端10aを、はんだ27により接合する(第1工程)。そして、筒状コンタクト部材10の他方の開放端10bから外部電極用端子25を圧入して、筒状コンタクト部材10に外部電極用端子25を嵌め合わせればよい(第2工程)。具体的には、第1工程においては、半導体チップ24または導電性板22にペースト状または板状のはんだ27を形成し、はんだ27上に筒状コンタクト部材10の一方の開放端10aを絶縁基板21側にして設置し、リフロー炉で加熱することによってなされる。このようして、筒状コンタクト部材10の一方の開放端10aは、半導体チップ24のおもて電極または導電性板22と、はんだ27により接合される。第2工程においては、筒状コンタクト部材10の他方の開放端10bに外部電極用端子25を圧入して嵌め合わせる。これにより、外部電極用端子25は、筒状コンタクト部材10の一方の開放端10aの内壁10cに形成された突起部5を変形して筒状コンタクト部材10に嵌め合わされる。   In order to manufacture (manufacture) the semiconductor device according to the first embodiment, first, one open end of the cylindrical contact member 10 is formed on the semiconductor chip 24 or the conductive plate 22 mounted on the insulating substrate 21. 10a is joined by solder 27 (first step). Then, the external electrode terminal 25 may be press-fitted from the other open end 10b of the cylindrical contact member 10, and the external electrode terminal 25 may be fitted to the cylindrical contact member 10 (second step). Specifically, in the first step, a paste-like or plate-like solder 27 is formed on the semiconductor chip 24 or the conductive plate 22, and one open end 10 a of the cylindrical contact member 10 is placed on the insulating substrate on the solder 27. It is made by installing on the 21st side and heating in a reflow furnace. In this manner, one open end 10 a of the cylindrical contact member 10 is joined to the front electrode or conductive plate 22 of the semiconductor chip 24 by the solder 27. In the second step, the external electrode terminal 25 is press-fitted and fitted into the other open end 10 b of the cylindrical contact member 10. As a result, the external electrode terminal 25 is fitted into the cylindrical contact member 10 by deforming the protruding portion 5 formed on the inner wall 10 c of the one open end 10 a of the cylindrical contact member 10.

次に、筒状コンタクト部材10の形成方法について説明する。まず、本体筒部1およびフランジ2,3を有する筒状コンタクト部材10と、リング状の平面形状を有する突起部5とをそれぞれ個々に成形(形成)する。次に、突起部5を配置する高さh1に位置決め治具の表面が位置するように、例えば筒状コンタクト部材10の一方の開放端10a側から本体筒部1の内部に位置決め治具を挿入する。次に、筒状コンタクト部材10の他方の開放端10b側から本体筒部1の内部に突起部5を挿入し、位置決め治具の高さ位置に合わせて突起部5を本体筒部1に嵌め込む。この際、突起部5の直径は、本体筒部1の内径より100μm程度大きくすることが望ましい。これによって、突起部5を本体筒部1に嵌め込んだ後に、突起部5が本体筒部1から外れることを防止することができる。または、位置決め治具に突起部5を配置し、位置決め治具に本体筒部1を上部より嵌めこんでもよい。このようにして、本体筒部1、フランジ2,3および突起部5を有する筒状コンタクト部材10が完成する。位置決め治具の材質としては、ステンレスなどの合金やタングステンカーバイドなどの超硬合金が、強度の点から、好ましい。この方法によれば、突起部5の構成材料によらず、突起部5を有する筒状コンタクト部材10を形成可能である。   Next, a method for forming the cylindrical contact member 10 will be described. First, the cylindrical contact member 10 having the main body cylindrical portion 1 and the flanges 2 and 3 and the protruding portion 5 having a ring-shaped planar shape are respectively formed (formed). Next, for example, the positioning jig is inserted into the inside of the main body cylindrical portion 1 from the one open end 10a side of the cylindrical contact member 10 so that the surface of the positioning jig is positioned at the height h1 where the protrusion 5 is disposed. To do. Next, the protruding portion 5 is inserted into the main body cylindrical portion 1 from the other open end 10b side of the cylindrical contact member 10, and the protruding portion 5 is fitted to the main body cylindrical portion 1 in accordance with the height position of the positioning jig. Include. At this time, it is desirable that the diameter of the protruding portion 5 is about 100 μm larger than the inner diameter of the main body cylindrical portion 1. Accordingly, it is possible to prevent the protrusion 5 from being detached from the main body cylinder 1 after the protrusion 5 is fitted into the main body cylinder 1. Alternatively, the protrusion 5 may be disposed on the positioning jig, and the main body cylinder 1 may be fitted into the positioning jig from above. In this way, the cylindrical contact member 10 having the main body cylindrical portion 1, the flanges 2, 3 and the protruding portion 5 is completed. As a material for the positioning jig, an alloy such as stainless steel or a cemented carbide such as tungsten carbide is preferable from the viewpoint of strength. According to this method, the cylindrical contact member 10 having the protrusions 5 can be formed regardless of the constituent material of the protrusions 5.

以上、説明したように、実施の形態1によれば、筒状コンタクト部材の下端側に配置されるように、本体筒部の内壁の全周にわたってリング状の平面形状を有する突起部を設けることで、筒状コンタクト部材のはんだ付け時に、本体筒部の内壁を這い上がったり飛散したはんだが突起部よりも上方側の第1領域まで這い上がることを防止することができる。これにより、本体筒部の内壁を這い上がったり飛散したはんだを筒状コンタクト部材の下端側で塞き止めることができる。このため、筒状コンタクト部材に外部電極用端子を挿入するときに、外部電極用端子にはんだによる負荷がかかることはない、または外部電極用端子にかかる負荷は無視できるほど小さい。このため、本体筒部の内壁に這い上がったり飛散したはんだを原因として、外部電極用端子を所定深さまで挿入することができなかったり、外部電極用端子が曲がったり折れたりするなどの組立不良をなくすことができる。したがって、良品率を向上させることができる。   As described above, according to the first embodiment, the protrusion having a ring-like planar shape is provided over the entire circumference of the inner wall of the main body cylindrical portion so as to be arranged on the lower end side of the cylindrical contact member. Thus, when soldering the cylindrical contact member, it is possible to prevent the solder that scoops up or scatters from the inner wall of the main body cylindrical portion from scooping up to the first region above the protruding portion. Thereby, the solder which scooped up and scattered the inner wall of the main body cylinder part can be blocked by the lower end side of the cylindrical contact member. For this reason, when the external electrode terminal is inserted into the cylindrical contact member, no load is applied to the external electrode terminal by solder, or the load applied to the external electrode terminal is negligibly small. For this reason, it is possible to eliminate assembly defects such as the external electrode terminal being unable to be inserted to a predetermined depth or the external electrode terminal being bent or broken due to solder that has creeped up or scattered on the inner wall of the main body cylinder. be able to. Therefore, the yield rate can be improved.

また、実施の形態1によれば、外部電極用端子の圧入による荷重によって外部電極用端子が突起部を変形させることが可能な寸法で突起部を形成することで、筒状コンタクト部材に外部電極用端子を所定深さまで挿入することができる。このため、筒状コンタクト部材から外部電極用端子を抜けづらくすることができる。また、実施の形態1によれば、外部電極用端子の挿入時の組立不良をなくすことができるため、外部電極用端子と筒状コンタクト部材との嵌め合わせに関する不良発生を検出する工程や設備が不要となる。また、実施の形態1によれば、筒状コンタクト部材に突起部を設けることで、はんだの這い上がりや飛散を抑制するために施される、はんだ材の仕様変更や積層基板の表面処理等の他の対策に比べて、はんだの這い上がりや飛散を防止する効果を容易に得ることができる。   Further, according to the first embodiment, the external electrode terminal is formed on the cylindrical contact member by forming the protrusion with a dimension that allows the external electrode terminal to deform the protrusion by a load due to the press-fitting of the external electrode terminal. The service terminal can be inserted to a predetermined depth. For this reason, it is difficult to remove the external electrode terminal from the cylindrical contact member. In addition, according to the first embodiment, it is possible to eliminate an assembly failure at the time of insertion of the external electrode terminal, and therefore there is a process or facility for detecting the occurrence of a defect related to the fitting between the external electrode terminal and the cylindrical contact member. It becomes unnecessary. In addition, according to the first embodiment, by providing a protrusion on the cylindrical contact member, the solder material specification change, the surface treatment of the multilayer substrate, etc., which are performed in order to suppress the creeping up and scattering of the solder, etc. Compared with other measures, it is possible to easily obtain the effect of preventing the solder from creeping up and scattering.

(実施の形態2)
次に、実施の形態2にかかる半導体装置の構成について説明する。図3は、実施の形態2にかかる半導体装置の構成を示す断面図である。実施の形態2にかかる半導体装置は、筒状コンタクト部材10の本体筒部1の内壁10cに設けられた、はんだ27aの這い上がりおよび飛散防止用の突起部31,32の断面形状が実施の形態1にかかる半導体装置と異なる。
(Embodiment 2)
Next, the configuration of the semiconductor device according to the second embodiment will be described. FIG. 3 is a cross-sectional view illustrating the configuration of the semiconductor device according to the second embodiment. In the semiconductor device according to the second embodiment, the cross-sectional shape of the protrusions 31 and 32 for preventing the solder 27a from creeping up and scattering, provided on the inner wall 10c of the main body cylinder portion 1 of the cylindrical contact member 10, is shown in the embodiment. 1 is different from the semiconductor device according to 1.

具体的には、図3に示すように、筒状コンタクト部材10の本体筒部1の内部に、本体筒部1の中心軸付近に向かうにしたがって厚さt1を薄くした、略三角形状の断面形状を有する突起部31(図3(a))や略台形状の断面形状を有する突起部32(図3(b)
)が設けられている。突起部31,32の幅w1および内径w2、および、突起部31,32を配置する高さh1は、実施の形態1と同様である(図2参照)。略三角形状や略台形状の断面形状を有する突起部31,32を備えた筒状コンタクト部材10の形成方法は、実施の形態1と同様である。突起部31,32の断面形状を略三角形状や略台形状とすることで、筒状コンタクト部材10に外部電極用端子25を圧入するとき、突起部31,32を変形させる力を低減させることができる。したがって、軽い力で筒状コンタクト部材10の所定の深さまで外部電極用端子25を圧入することができる。
Specifically, as shown in FIG. 3, a substantially triangular cross section in which the thickness t <b> 1 is reduced toward the vicinity of the central axis of the main body cylindrical portion 1 inside the main body cylindrical portion 1 of the cylindrical contact member 10. The protrusion 31 having a shape (FIG. 3A) and the protrusion 32 having a substantially trapezoidal cross-sectional shape (FIG. 3B)
) Is provided. The width w1 and the inner diameter w2 of the protrusions 31 and 32 and the height h1 at which the protrusions 31 and 32 are arranged are the same as in the first embodiment (see FIG. 2). The method of forming the cylindrical contact member 10 provided with the protrusions 31 and 32 having a substantially triangular shape or a substantially trapezoidal cross-sectional shape is the same as that of the first embodiment. By making the cross-sectional shape of the protrusions 31 and 32 substantially triangular or trapezoidal, when the external electrode terminal 25 is press-fitted into the cylindrical contact member 10, the force that deforms the protrusions 31 and 32 is reduced. Can do. Therefore, the external electrode terminal 25 can be press-fitted to a predetermined depth of the cylindrical contact member 10 with a light force.

以上、説明したように、実施の形態2によれば、実施の形態1と同様の効果を得ることができる。   As described above, according to the second embodiment, the same effect as in the first embodiment can be obtained.

(実施の形態3)
次に、実施の形態3にかかる半導体装置の構成について説明する。図4は、実施の形態3にかかる半導体装置の構成を示す断面図である。実施の形態3にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、本体筒部1の側壁を内側に塑性変形させることで、はんだ27aの這い上がりおよび飛散防止用の突起部33を形成している点である。具体的には、図4に示すように、筒状コンタクト部材30の本体筒部1の側壁の全周にわたって、本体筒部1の一部を内側に塑性変形させてなる略半円形状や略半楕円形状の断面形状を有する突起部33が設けられている。
(Embodiment 3)
Next, the configuration of the semiconductor device according to the third embodiment will be described. FIG. 4 is a cross-sectional view illustrating the configuration of the semiconductor device according to the third embodiment. The difference between the semiconductor device according to the third embodiment and the semiconductor device according to the first embodiment is that the side wall of the main body cylinder portion 1 is plastically deformed inward to thereby prevent the solder 27a from creeping up and from being scattered. Is the point that forms. Specifically, as shown in FIG. 4, a substantially semicircular shape or a substantially round shape formed by plastically deforming a part of the main body cylinder portion 1 over the entire circumference of the side wall of the main body cylinder portion 1 of the cylindrical contact member 30. A protrusion 33 having a semi-elliptical cross-sectional shape is provided.

突起部33を配置する高さh1や、突起部33の幅w1および内径w2は、実施の形態1と同様である(図2参照)。突起部33を形成する高さh1とは、筒状コンタクト部材30の一方の開放端10aのフランジ2の下面から突起部33の下端部(積層基板20側の端部)33aまでの高さである。突起部33の端部33a,33bとは、本体筒部1の側壁が曲がり始めている箇所である。突起部33の幅w1とは、本体筒部1の内壁10cから突起部33の最も突出した頂点部33cまでの距離である。突起部33の内径w2とは、突起部33の最も突出した頂点部33c間の距離である。   The height h1 at which the protrusion 33 is disposed, and the width w1 and the inner diameter w2 of the protrusion 33 are the same as those in the first embodiment (see FIG. 2). The height h1 that forms the protruding portion 33 is the height from the lower surface of the flange 2 of one open end 10a of the cylindrical contact member 30 to the lower end portion (end portion on the laminated substrate 20 side) 33a of the protruding portion 33. is there. The end portions 33a and 33b of the protruding portion 33 are locations where the side wall of the main body cylindrical portion 1 begins to bend. The width w1 of the protruding portion 33 is a distance from the inner wall 10c of the main body cylinder portion 1 to the most protruding vertex portion 33c of the protruding portion 33. The inner diameter w <b> 2 of the protrusion 33 is a distance between the most protruding vertex portions 33 c of the protrusion 33.

突起部33の幅w1および厚さt3は、突起部33の断面形状が略半円形状である場合にはともに突起部33の直径に相当し、略半楕円形状である場合にはそれぞれ突起部33の長軸の1/2の長さおよび短軸の長さに相当する。突起部33は、本体筒部1の側壁の一部を塑性変形させて略半円形状または略半楕円形状に湾曲させることで金属厚さの薄くなった部分である。突起部33の幅w1および厚さt3は、本体筒部1の側壁の一部を塑性変形させることによって金属厚さの薄くなった部分を外部電極用端子25の圧入時の荷重によって本体筒部1の内壁10c側に押し潰すことができる程度に薄い金属厚さにすることができる寸法に設定される。   The width w1 and the thickness t3 of the protrusion 33 correspond to the diameter of the protrusion 33 when the cross-sectional shape of the protrusion 33 is substantially semicircular, and are respectively the protrusion when the protrusion 33 has a substantially semi-elliptical shape. It corresponds to the length of 1/2 of the major axis of 33 and the length of the minor axis. The projecting portion 33 is a portion where the metal thickness is reduced by plastically deforming a part of the side wall of the main body cylindrical portion 1 and bending it into a substantially semicircular shape or a substantially semielliptical shape. The width w1 and the thickness t3 of the protrusion 33 are such that the portion where the metal thickness is reduced by plastic deformation of a part of the side wall of the main body tube portion 1 is caused by the load when the external electrode terminal 25 is press-fitted. The dimension is set so that the metal thickness can be reduced to such an extent that it can be crushed to the inner wall 10c side.

略半円形状や略半楕円形状の断面形状を有する突起部33を備えた筒状コンタクト部材30は、例えば、次のように形成すればよい。まず、本体筒部1およびフランジ2,3を有する筒状コンタクト部材30を例えば一体成形により形成する。次に、筒状コンタクト部材30の本体筒部1を旋盤に装着する。次に、本体筒部1の外壁に所定形状のバイトを押し付けながら中心軸回りに筒状コンタクト部材30を回転させることで、本体筒部1の側壁の全周にわたって本体筒部1の一部を内側に塑性変形させる。これによって、略半円形状や略半楕円形状の断面形状を有する突起部33を備えた筒状コンタクト部材30が完成する。   The cylindrical contact member 30 provided with the protrusion 33 having a substantially semicircular or substantially semi-elliptical cross-sectional shape may be formed as follows, for example. First, the cylindrical contact member 30 having the main body cylinder portion 1 and the flanges 2 and 3 is formed by, for example, integral molding. Next, the main body cylinder part 1 of the cylindrical contact member 30 is mounted on a lathe. Next, by rotating the cylindrical contact member 30 around the central axis while pressing a predetermined-shaped bite against the outer wall of the main body cylinder portion 1, a part of the main body cylinder portion 1 is moved over the entire circumference of the side wall of the main body cylinder portion 1. It is plastically deformed inside. Thereby, the cylindrical contact member 30 provided with the protrusion 33 having a substantially semicircular or substantially semi-elliptical cross-sectional shape is completed.

以上、説明したように、実施の形態3によれば、実施の形態1,2と同様の効果を得ることができる。   As described above, according to the third embodiment, the same effect as in the first and second embodiments can be obtained.

(実施の形態4)
次に、実施の形態4にかかる半導体装置の構成について説明する。図5は、実施の形態4にかかる半導体装置の構成を示す断面図である。実施の形態4にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、さらに、筒状コンタクト部材40の他方の開放端10b側にも、はんだ27aの這い上がりおよび飛散防止用の突起部(以下、第2突起部とする)41が設けられている点である。すなわち、筒状コンタクト部材40の本体筒部1の内壁10cには、筒状コンタクト部材40の一方の開放端10a側に第1突起部5が設けられ、かつ他方の開放端10b側に第2突起部41が設けられている。
(Embodiment 4)
Next, the configuration of the semiconductor device according to the fourth embodiment will be described. FIG. 5 is a cross-sectional view illustrating the configuration of the semiconductor device according to the fourth embodiment. The difference between the semiconductor device according to the fourth embodiment and the semiconductor device according to the first embodiment is that the solder contact 27a is also squeezed and spattered on the other open end 10b side of the cylindrical contact member 40. A portion (hereinafter, referred to as a second protrusion) 41 is provided. That is, the inner wall 10c of the main body cylindrical portion 1 of the cylindrical contact member 40 is provided with the first protrusion 5 on one open end 10a side of the cylindrical contact member 40 and the second on the other open end 10b side. A protrusion 41 is provided.

実施の形態4においては、筒状コンタクト部材40のいずれの開放端10a,10bにそれぞれフランジ2,3を設けて対称的な構造とすることが好ましい。その理由は、次の通りである。本体筒部1の内壁10cにも開放端10a,10b側にそれぞれ第1,2突起部5,41が設けられ対称的な構造となっている。このため、筒状コンタクト部材40のいずれの開放端10a,10bのフランジ2,3を導電性板22との接合面にしたとしても、本体筒部1の内壁10cに這い上がったり飛散したはんだ27aが筒状コンタクト部材40の下端側に配置された突起部(第1突起部5または第2突起部41)を超えて筒状コンタクト部材40の上端側に這い上がり飛散することを防止することができるからである。すなわち、筒状コンタクト部材40は、方向性を選ばずにはんだ付け可能な構造となっている。また、筒状コンタクト部材40のいずれの開放端10a,10b側のフランジ2,3を導電性板22との接合面としてもよいため、組立間違い等による組立不良を低減させることができ、組立時の作業効率が向上する。   In the fourth embodiment, it is preferable to provide a symmetrical structure by providing flanges 2 and 3 at any open end 10a and 10b of the cylindrical contact member 40, respectively. The reason is as follows. The inner wall 10c of the main body cylinder portion 1 is also provided with first and second protrusions 5 and 41 on the open ends 10a and 10b side, respectively, and has a symmetrical structure. For this reason, even if the flanges 2 and 3 of any of the open ends 10a and 10b of the cylindrical contact member 40 are used as the joint surfaces with the conductive plate 22, the solder 27a that has creeped up or scattered on the inner wall 10c of the main body cylindrical portion 1 is formed. It is possible to prevent the scooping up and scattering to the upper end side of the tubular contact member 40 beyond the projecting portion (the first projecting portion 5 or the second projecting portion 41) disposed on the lower end side of the cylindrical contact member 40. Because. That is, the cylindrical contact member 40 has a structure that can be soldered without selecting the directionality. In addition, since the flanges 2 and 3 on the open ends 10a and 10b side of the cylindrical contact member 40 may be used as a joint surface with the conductive plate 22, it is possible to reduce an assembly failure due to an assembly error or the like. Work efficiency is improved.

第1突起部5の構成は、実施の形態1と同様である。第2突起部41の構成は、例えば、第1突起部5の構成と同様である。第1,2突起部5,41は、例えば、本体筒部1の中心軸方向の全長の1/2の深さを通り、かつ本体筒部1の中心軸と直交する切断面に対して略面対称に配置されている。また、第2突起部41は、上述した幅w1、内径w2および配置する高さh1の条件を満たしていればよく、第1突起部5と異なる構成であってもよい。第2突起部41を配置する高さh1とは、筒状コンタクト部材40の他方の開放端10bのフランジ3の下面から第2突起部41の上面(筒状コンタクト部材40の他方の開放端10b側の面)までの高さである。筒状コンタクト部材40の形成方法は、位置決め治具に第1,2突起部5,41を離して配置し、位置決め治具に本体筒部1を上部より嵌め込めばよい。   The configuration of the first protrusion 5 is the same as that of the first embodiment. The configuration of the second protrusion 41 is the same as that of the first protrusion 5, for example. For example, the first and second protrusions 5 and 41 pass through a depth that is ½ of the total length in the central axis direction of the main body cylinder portion 1 and are approximately the cutting plane that is orthogonal to the central axis of the main body cylinder portion 1. They are arranged in plane symmetry. Moreover, the 2nd protrusion part 41 should just satisfy | fill the conditions of the width | variety w1 mentioned above, the internal diameter w2, and the height h1 to arrange | position, and the structure different from the 1st protrusion part 5 may be sufficient as it. The height h1 at which the second projecting portion 41 is disposed refers to the lower surface of the flange 3 of the other open end 10b of the cylindrical contact member 40 to the upper surface of the second projecting portion 41 (the other open end 10b of the cylindrical contact member 40). It is the height to the side surface). The cylindrical contact member 40 may be formed by disposing the first and second protrusions 5 and 41 apart from the positioning jig and fitting the main body cylinder 1 into the positioning jig from above.

以上、説明したように、実施の形態4によれば、実施の形態1〜3と同様の効果を得ることができる。   As described above, according to the fourth embodiment, the same effects as in the first to third embodiments can be obtained.

(実施例1)
次に、はんだ27aの這い上がりおよび飛散防止用の突起部5の幅w1について検証した。図6は、実施例1にかかる半導体装置の突起部の幅について検証した結果を示す図表である。実施の形態1にかかる半導体装置の構成にしたがい、突起部5の幅w1と本体筒部1の内径d1との比率(=2×w1/d1)が異なる筒状コンタクト部材10をはんだ付けした複数の試料を作製した。突起部5を配置する高さh1は1mmとし、突起部5の厚さt1は0.1mmとした。本体筒部1には、内径d1が1mmの中空筒状部材を用いた。これら各試料において、はんだ27aの這い上がりや飛散の有無を判定した結果を図6に示す。図6では、第1領域Aへのはんだ27aの這い上がりや飛散を防止することができた場合を○とし、第1領域Aまではんだ27aの這い上がりや飛散が生じた場合を×とした。
Example 1
Next, the width w1 of the protrusion 5 for preventing the solder 27a from creeping and scattering was verified. FIG. 6 is a table showing the results of verifying the width of the protrusions of the semiconductor device according to the first example. According to the configuration of the semiconductor device according to the first embodiment, a plurality of soldered cylindrical contact members 10 having different ratios (= 2 × w1 / d1) between the width w1 of the protrusion 5 and the inner diameter d1 of the main body cylinder 1 A sample of was prepared. The height h1 at which the protrusion 5 is disposed is 1 mm, and the thickness t1 of the protrusion 5 is 0.1 mm. A hollow cylindrical member having an inner diameter d1 of 1 mm was used for the main body cylindrical portion 1. FIG. 6 shows the result of determining whether or not the solder 27a creeped up or scattered in each of these samples. In FIG. 6, the case where it was possible to prevent the solder 27a from creeping up and scattering into the first region A was marked as ◯, and the case where the solder 27a creeped up and scattered up to the first region A was marked as x.

図6に示す結果より、突起部5の幅w1と本体筒部1の内径d1との比率が0.2≦2×w1/d1≦0.8を満たす場合に、第2領域Bから第1領域Aへのはんだ27aの這い上がりおよび飛散を防止することができることが確認された。このとき、はんだ27aの濡れ上がった厚さt2は0.3mmであることが確認された。はんだ27aの濡れ上がった厚さt2とは、本体筒部1の内壁10cに這い上がったり飛散したはんだ27aの表面張力(はんだ27aと本体筒部1の内壁10cとの界面張力)に基づいて本体筒部1の内壁10cに円弧状に膨らんだはんだ27aの膨らみの最大厚さである。このため、突起部5の幅w1は0.3mm以上であることが好ましい。例えば、本体筒部1の内径d1が1mmの場合、上記範囲において最小の突起部5の幅w1は0.1mmである(0.2=2×w1[mm]/1[mm])。したがって、突起部5の幅w1がはんだ27aの濡れ上がった厚さt2の1/3以上の幅があれば、はんだ27aの這い上がりおよび飛散を防止する効果があることが確認された(w1≧t2/3)。図示省略するが、突起部5を配置する高さh1は1mmより高くても同様の結果を得られることが発明者らによって確認されている。また、突起部5の厚さt1は0.1mmより厚くても同様の結果を得られることが発明者らによって確認されている。   From the result shown in FIG. 6, when the ratio between the width w1 of the protrusion 5 and the inner diameter d1 of the main body cylinder portion 1 satisfies 0.2 ≦ 2 × w1 / d1 ≦ 0.8, It was confirmed that creeping and scattering of the solder 27a to the region A can be prevented. At this time, it was confirmed that the wet thickness t2 of the solder 27a was 0.3 mm. The wet thickness t2 of the solder 27a is based on the surface tension of the solder 27a that has creeped up or scattered on the inner wall 10c of the main body cylinder portion 1 (interfacial tension between the solder 27a and the inner wall 10c of the main body cylinder portion 1). This is the maximum thickness of the bulge of the solder 27a that bulges in an arc shape on the inner wall 10c of the portion 1. For this reason, it is preferable that the width | variety w1 of the projection part 5 is 0.3 mm or more. For example, when the inner diameter d1 of the main body cylinder portion 1 is 1 mm, the minimum width w1 of the protrusion 5 in the above range is 0.1 mm (0.2 = 2 × w1 [mm] / 1 [mm]). Therefore, it was confirmed that if the width w1 of the protrusion 5 is 1/3 or more of the thickness t2 where the solder 27a is wet, the solder 27a is prevented from creeping up and scattering (w1 ≧ t2 / 3). Although illustration is omitted, the inventors have confirmed that the same result can be obtained even if the height h1 at which the protrusion 5 is disposed is higher than 1 mm. Further, the inventors have confirmed that the same result can be obtained even when the thickness t1 of the protrusion 5 is greater than 0.1 mm.

(実施例2)
次に、はんだ27aの這い上がりおよび飛散防止用の突起部5の厚さt1について検証した。図7は、実施例2にかかる半導体装置の突起部の厚さについて検証した結果を示す図表である。実施の形態1にかかる半導体装置の構成にしたがい、突起部5の厚さt1が異なる筒状コンタクト部材10をはんだ付けし、筒状コンタクト部材10の本体筒部1に外部電極用端子25を圧入した複数の試料を作製した。外部電極用端子25を圧入するための加圧力は5kgfとした。これら各試料において、突起部5を変形させることができたか否かを判定した結果を図7に示す。図7では、突起部5を変形させることができた場合を○とし、突起部5を変形させることができなかった場合を×とした。なお、突起部5を配置する高さh1は1mmとした。そして、突起部5の幅w1と本体筒部1の内径d1との比率(=2×w1/d1)は0.2とした。
(Example 2)
Next, the thickness t1 of the protrusion 5 for preventing the solder 27a from creeping and scattering was verified. FIG. 7 is a table showing results of verifying the thickness of the protrusions of the semiconductor device according to the second example. According to the configuration of the semiconductor device according to the first embodiment, the cylindrical contact member 10 having the protrusion portion 5 having a different thickness t1 is soldered, and the external electrode terminal 25 is press-fitted into the main body cylindrical portion 1 of the cylindrical contact member 10. A plurality of samples were prepared. The pressurizing force for press-fitting the external electrode terminal 25 was 5 kgf. FIG. 7 shows the result of determining whether or not the protrusion 5 could be deformed in each of these samples. In FIG. 7, the case where the protrusion 5 was able to be deformed was marked with ◯, and the case where the protrusion 5 could not be deformed was marked with x. In addition, height h1 which arrange | positions the projection part 5 was 1 mm. The ratio (= 2 × w1 / d1) between the width w1 of the protrusion 5 and the inner diameter d1 of the main body cylinder portion 1 was set to 0.2.

図7に示す結果より、突起部5の厚さt1が0.1mm以上1.6mm以下の範囲内である場合に、外部電極用端子25を圧入したときの荷重によって突起部5を変形させることができることが確認された。   From the result shown in FIG. 7, when the thickness t1 of the protrusion 5 is within the range of 0.1 mm to 1.6 mm, the protrusion 5 is deformed by the load when the external electrode terminal 25 is press-fitted. It was confirmed that

(実施例3)
次に、はんだ27aの這い上がりおよび飛散防止用の突起部5を配置する高さh1について検証した。図8は、実施例3にかかる半導体装置の突起部を配置する高さの下限値について検証した結果を示す図表である。図9は、実施例3にかかる半導体装置の突起部を配置する高さの上限値について検証した結果を示す図表である。実施の形態1にかかる半導体装置の構成にしたがい、突起部5を配置する高さh1が異なる筒状コンタクト部材10をはんだ付けし、筒状コンタクト部材10の本体筒部1に外部電極用端子25を圧入した複数の試料を作製した。突起部5の幅w1と本体筒部1の内径d1との比率(=2×w1/d1)は0.2とした。突起部5の厚さt1は、0.2mmとした。図8,9では、筒状コンタクト部材10の上端側の第1領域Aにはんだ27aが這い上がったり飛散していない、および第1領域Aにはんだ27aが這い上がったり飛散したとしても外部電極用端子25の挿入時に組立不良を生じさせない場合を○とし、第1領域Aにはんだ27aが這い上がったり飛散することで組立不良が生じた場合を×とした。
Example 3
Next, the height h1 at which the protrusions 5 for preventing the solder 27a from creeping and scattering were disposed was verified. FIG. 8 is a table showing the results of verifying the lower limit value of the height at which the protrusions of the semiconductor device according to Example 3 are arranged. FIG. 9 is a table showing the results of verifying the upper limit value of the height at which the protrusions of the semiconductor device according to Example 3 are arranged. According to the configuration of the semiconductor device according to the first embodiment, the cylindrical contact member 10 having a different height h1 for arranging the protrusion 5 is soldered, and the external electrode terminal 25 is attached to the main body cylindrical portion 1 of the cylindrical contact member 10. A plurality of samples were prepared by press-fitting. The ratio (= 2 × w1 / d1) between the width w1 of the protrusion 5 and the inner diameter d1 of the main body cylinder 1 was set to 0.2. The thickness t1 of the protrusion 5 was 0.2 mm. 8 and 9, even if the solder 27a does not crawl up or scatter in the first region A on the upper end side of the cylindrical contact member 10, and the solder 27a crawls up or scatters in the first region A, the external electrode terminal 25 is used. The case where no assembly failure occurred during insertion of the solder was marked as ◯, and the case where the assembly failure occurred due to the solder 27a scooping up or scattering in the first region A was marked as x.

図8に示す結果より、突起部5を配置する高さh1が1mm以上である場合に、第1領域Aへのはんだ27aの這い上がりや飛散が生じない、または第1領域Aにはんだ27aが這い上がったり飛散していても外部電極用端子25の挿入時に組立不良を生じさせない程度に良好であることが確認された。また、外部電極用端子25の下端部25aまでの高さh2の隙間内ではんだ27aの這い上がりや飛散を止めることができることが確認された。図9に示す結果より、突起部5を配置する高さh1の上限値を、外部電極用端子25の下端部25aの高さh2に対してh1≦2×h2とすることで、第1領域Aへのはんだ27aの這い上がりや飛散が生じない、または第1領域Aにはんだ27aが這い上がったり飛散していても外部電極用端子25の挿入時に組立不良を生じさせない程度に良好であることが確認された。具体的には、突起部5を配置する高さh1は、1mm以上4mm以下とすることが好ましいことが確認された(1mm≦h1≦4mm)。図9には、外部電極用端子25の下端部25aまでの高さh2を2mmとした場合を一例に示すが、外部電極用端子25の下端部25aまでの高さh2を種々変更した場合においても、突起部5を配置する高さh1を上記範囲とすることで同様の結果が得られることが発明者らによって確認されている。   From the result shown in FIG. 8, when the height h1 at which the protrusion 5 is disposed is 1 mm or more, the solder 27a does not creep up or scatter to the first region A, or the solder 27a is not in the first region A. It was confirmed that even if they were scooped up or scattered, it was good enough not to cause assembly failure when the external electrode terminal 25 was inserted. It was also confirmed that the solder 27a can be prevented from creeping up and scattering within the gap of the height h2 to the lower end 25a of the external electrode terminal 25. From the result shown in FIG. 9, the upper limit value of the height h1 at which the protrusions 5 are arranged is set to h1 ≦ 2 × h2 with respect to the height h2 of the lower end portion 25a of the external electrode terminal 25, whereby the first region The solder 27a does not creep up or scatter to A, or even if the solder 27a crawls or scatters in the first region A, it should be good enough not to cause assembly failure when the external electrode terminal 25 is inserted. confirmed. Specifically, it was confirmed that the height h1 at which the protrusion 5 is disposed is preferably 1 mm or more and 4 mm or less (1 mm ≦ h1 ≦ 4 mm). FIG. 9 shows an example in which the height h2 to the lower end portion 25a of the external electrode terminal 25 is 2 mm, but when the height h2 to the lower end portion 25a of the external electrode terminal 25 is variously changed. In addition, the inventors have confirmed that the same result can be obtained by setting the height h1 at which the protrusion 5 is disposed within the above range.

図示省略するが、実施の形態2〜4にかかる半導体装置についても実施の形態1と同様に上述した実施例1〜3の結果が得られることが発明者らによって確認されている。   Although not shown, the inventors have confirmed that the results of Examples 1 to 3 described above can be obtained for the semiconductor devices according to the second to fourth embodiments as in the first embodiment.

以上において本発明は、上述した実施の形態に限らず、本発明の趣旨を逸脱しない範囲で種々変更可能である。   As described above, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

以上のように、本発明にかかる半導体装置、金属部材および半導体装置の製造方法は、積層基板の表面の導電性板に半導体チップや他の構成部材などをはんだにより接合した構成を有する半導体モジュールなどの半導体装置に有用であり、筒状コンタクト部材に外部電極用端子を嵌め合わせることで導電性板との電気的な接続を確保した半導体装置に適している。   As described above, a semiconductor device, a metal member, and a method for manufacturing a semiconductor device according to the present invention include a semiconductor module having a configuration in which a semiconductor chip or other constituent member is joined to a conductive plate on the surface of a multilayer substrate by soldering. It is useful for a semiconductor device in which electrical connection with a conductive plate is ensured by fitting an external electrode terminal to a cylindrical contact member.

1 本体筒部
2,3 フランジ
4 空洞部
5,31〜33,41 突起部
5a 突起部の孔部
10,30,40 筒状コンタクト部材
10a, 10b 筒状コンタクト部材の開放端
10c 本体筒部の内壁
20 積層基板
21 セラミック基板
22 導電性板
23 銅箔
24 半導体チップ
25 外部電極用端子
25a 外部電極用端子の下端部
26 ワイヤー
27,27a はんだ
33a,33b 略半円形状または略半楕円形状の突起部の端部
33c 略半円形状または略半楕円形状の突起部の頂点部
A 空洞部の第1領域
B 空洞部の第2領域
d1 本体筒部の内径
d2 外部電極用端子の直径
h1 突起部を配置する高さ
h2 外部電極用端子の下端部の高さ
t1 突起部の厚さ
t2 はんだの濡れ上がった厚さ
t3 略半円形状または略半楕円形状の突起部の厚さ
w1 突起部の幅
w2 突起部の内径
DESCRIPTION OF SYMBOLS 1 Body cylinder part 2,3 Flange 4 Cavity part 5,31-33,41 Projection part 5a Hole part of projection part 10,30,40 Cylindrical contact member 10a, 10b Open end of cylindrical contact member 10c of main body cylinder part Inner wall 20 Laminated substrate 21 Ceramic substrate 22 Conductive plate 23 Copper foil 24 Semiconductor chip 25 External electrode terminal 25a Lower end of external electrode terminal 26 Wire 27, 27a Solder 33a, 33b Substantially semicircular or substantially semi-elliptical protrusion End of part 33c Apex part of substantially semicircular or substantially semi-elliptical protrusion A A first area of cavity B second area of cavity d1 inner diameter of main body cylinder part d2 diameter of terminal for external electrode h1 protrusion H2 Height of the lower end of the external electrode terminal t1 Thickness of the projection t2 Thickness of the solder wet t3 Substantially semicircular or semi-elliptical The inner diameter of the width w2 protruding portion in the thickness w1 protrusion raised portion

Claims (20)

両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、
前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、
前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した、矩形状の断面形状をなす第1の突起部と、
を有することを特徴とする金属部材。
A metal member that has open ends at both ends, and can be joined to one of the open ends by solder on a semiconductor chip or a conductive plate,
A hollow cylindrical tube portion into which external electrode terminals can be inserted and fitted from the other open end; and
A first protrusion having a rectangular cross-sectional shape projecting inwardly in a direction orthogonal to the central axis of the cylindrical portion on the inner wall on the one open end side of the cylindrical portion;
Metal member characterized by having.
両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、
前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、
前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した、前記中心軸付近に向かうにしたがって厚さを薄くした三角形状または台形状の断面形状をなす第1の突起部と、
を有することを特徴とする金属部材。
A metal member that has open ends at both ends, and can be joined to one of the open ends by solder on a semiconductor chip or a conductive plate,
A hollow cylindrical tube portion into which external electrode terminals can be inserted and fitted from the other open end; and
A triangular or trapezoidal cross section that protrudes inwardly in the direction perpendicular to the central axis of the cylindrical part on the inner wall on the one open end side of the cylindrical part, and whose thickness decreases toward the vicinity of the central axis. A first protrusion having a shape;
Metal member characterized by having.
両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、
前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、
前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した第1の突起部と、
を有し、
前記筒部の前記一方の開放端側の内壁に固定されるように、前記第1の突起部を嵌め合わせてなることを特徴とする金属部材。
A metal member that has open ends at both ends, and can be joined to one of the open ends by solder on a semiconductor chip or a conductive plate,
A hollow cylindrical tube portion into which external electrode terminals can be inserted and fitted from the other open end; and
A first projecting portion projecting inward in a direction perpendicular to the central axis of the cylindrical portion on the inner wall on the one open end side of the cylindrical portion;
Have
The metal member, wherein the first projecting portion is fitted together so as to be fixed to the inner wall on the one open end side of the cylindrical portion.
両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、
前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、
前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した第1の突起部と、
を有し、
前記第1の突起部は、前記筒部の側壁の一部を、前記筒部の前記一方の開放端側の内壁および外壁ともに内側に塑性変形させてなり、
前記筒部の前記一方の開放端側の内壁および外壁が前記開放端から前記第1の突起部までが平坦かつ直線状であることを特徴とする金属部材。
A metal member that has open ends at both ends, and can be joined to one of the open ends by solder on a semiconductor chip or a conductive plate,
A hollow cylindrical tube portion into which external electrode terminals can be inserted and fitted from the other open end; and
A first projecting portion projecting inward in a direction perpendicular to the central axis of the cylindrical portion on the inner wall on the one open end side of the cylindrical portion;
Have
The first projecting portion is formed by plastically deforming a part of the side wall of the cylindrical portion inward with the inner wall and the outer wall on the one open end side of the cylindrical portion,
The metal member, wherein an inner wall and an outer wall on the one open end side of the cylindrical portion are flat and straight from the open end to the first protrusion.
半円形状または半楕円形状の断面形状をなす前記第1の突起部を有することを特徴とする請求項4に記載の金属部材。   The metal member according to claim 4, wherein the first protrusion has a semicircular or semi-elliptical cross-sectional shape. 前記筒部の前記一方の開放端側の内壁の全周にわたる前記第1の突起部を有することを特徴とする請求項1〜5のいずれか一つに記載の金属部材。   The metal member according to any one of claims 1 to 5, further comprising the first projecting portion over the entire circumference of the inner wall on the one open end side of the cylindrical portion. 前記一方の開放端に、前記中心軸と直交する方向に外側に張り出したフランジを有することを特徴とする請求項1〜6のいずれか一つに記載の金属部材。   The metal member according to any one of claims 1 to 6, wherein the one open end has a flange projecting outward in a direction orthogonal to the central axis. 前記第1の突起部の厚さは、0.1mm以上1.6mm以下であることを特徴とする請求項1〜7のいずれか一つに記載の金属部材。   The thickness of the said 1st projection part is 0.1 mm or more and 1.6 mm or less, The metal member as described in any one of Claims 1-7 characterized by the above-mentioned. 前記第1の突起部の幅wとの比率が0.2≦2×w/d≦0.8を満たす内径dを有することを特徴とする請求項1〜8のいずれか一つに記載の金属部材。   The ratio of the width of the first protrusions to the width w has an inner diameter d that satisfies 0.2 ≦ 2 × w / d ≦ 0.8. Metal member. 前記第1の突起部を配置する高さは、前記はんだによる接合面から前記第1の突起部の前記接合面側の面までの高さが1mm以上であることを特徴とする請求項1〜9のいずれか一つに記載の金属部材。   The height from which the 1st projection part is arrange | positioned is the height from the joint surface by the said solder to the surface by the side of the said joint surface of the said 1st projection part is 1 mm or more, It is characterized by the above-mentioned. The metal member according to any one of 9. 前記筒部の前記他方の開放端側の内壁に、前記中心軸と直交する方向に内側に張り出した第2の突起部を有することを特徴とする請求項1〜10のいずれか一つに記載の金属部材。   The second projecting portion that protrudes inward in a direction orthogonal to the central axis is provided on the inner wall of the other open end side of the cylindrical portion. Metal parts. 両端に開放端を備え、半導体チップまたは導電性板に前記開放端の一方をはんだにより接合されうる金属部材であって、
前記開放端の他方から外部電極用端子が挿入され嵌め合わされうる中空筒状の筒部と、
前記筒部の前記一方の開放端側の内壁に、前記筒部の中心軸と直交する方向に内側に張り出した第1の突起部と、
前記筒部の前記他方の開放端側の内壁に、前記中心軸と直交する方向に内側に張り出した第2の突起部と、
を有し、
前記筒部の前記他方の開放端側の内壁に固定されるように、前記第2の突起部を嵌め合わせてなることを特徴とする金属部材。
A metal member that has open ends at both ends, and can be joined to one of the open ends by solder on a semiconductor chip or a conductive plate,
A hollow cylindrical tube portion into which external electrode terminals can be inserted and fitted from the other open end; and
A first projecting portion projecting inward in a direction perpendicular to the central axis of the cylindrical portion on the inner wall on the one open end side of the cylindrical portion;
A second protrusion projecting inward in a direction orthogonal to the central axis on the inner wall of the other open end side of the cylindrical portion;
Have
The metal member, wherein the second projecting portion is fitted together so as to be fixed to the inner wall on the other open end side of the cylindrical portion.
前記第2の突起部を配置する高さは、前記他方の開放端から前記第2の突起部の前記他方の開放端側の面までの高さが1mm以上であることを特徴とする請求項11または12に記載の金属部材。   The height at which the second protrusion is arranged is such that the height from the other open end to the surface on the other open end of the second protrusion is 1 mm or more. The metal member according to 11 or 12. 前記筒部の前記一方の開放端側の内壁に固定されるように、前記第1の突起部を嵌め合わせてなることを特徴とする請求項1または2に記載の金属部材。   3. The metal member according to claim 1, wherein the first protrusion is fitted so as to be fixed to an inner wall on the one open end side of the cylindrical portion. 前記筒部の前記他方の開放端側の内壁に固定されるように、前記第2の突起部を嵌め合わせてなることを特徴とする請求項11または12に記載の金属部材。   The metal member according to claim 11 or 12, wherein the second projecting portion is fitted so as to be fixed to an inner wall on the other open end side of the cylindrical portion. 前記第2の突起部は、前記筒部の側壁の一部を、前記筒部の前記他方の開放端側の内壁および外壁ともに内側に塑性変形させてなり、
前記筒部の前記他方の開放端側の内壁および外壁が前記開放端から前記第2の突起部までが平坦かつ直線状であることを特徴とする請求項11または12に記載の金属部材。
The second projecting portion is formed by plastically deforming a part of the side wall of the cylindrical portion inward along with the inner wall and the outer wall on the other open end side of the cylindrical portion,
13. The metal member according to claim 11, wherein an inner wall and an outer wall on the other open end side of the cylindrical portion are flat and linear from the open end to the second protrusion.
半円形状または半楕円形状の断面形状をなす前記第2の突起部を有することを特徴とする請求項16に記載の金属部材。   17. The metal member according to claim 16, wherein the second protrusion has a semicircular or semi-elliptical cross-sectional shape. 前記半導体チップまたは前記導電性板に、請求項1〜17のいずれか一つに記載の金属部材の前記一方の開放端がはんだにより接合されたことを特徴とする半導体装置。   A semiconductor device, wherein the one open end of the metal member according to claim 1 is joined to the semiconductor chip or the conductive plate by solder. 前記半導体チップと、前記導電性板と、を絶縁基板上に実装した半導体装置の製造方法であって、
前記半導体チップ上または前記導電性板上に、請求項1〜17のいずれか一つに記載の金属部材の前記一方の開放端を、はんだにより接合する第1工程と、
前記金属部材の前記他方の開放端から前記外部電極用端子を圧入して、前記金属部材に前記外部電極用端子を嵌め合わせる第2工程と、
を含むことを特徴とする半導体装置の製造方法。
A method of manufacturing a semiconductor device in which the semiconductor chip and the conductive plate are mounted on an insulating substrate,
A first step of joining the one open end of the metal member according to any one of claims 1 to 17 on the semiconductor chip or the conductive plate by solder,
A second step of press-fitting the external electrode terminal from the other open end of the metal member and fitting the external electrode terminal to the metal member;
A method for manufacturing a semiconductor device, comprising:
端部の尖った前記外部電極用端子を圧入することを特徴とする請求項19に記載の半導体装置の製造方法。   20. The method of manufacturing a semiconductor device according to claim 19, wherein the external electrode terminal having a sharp end is press-fitted.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010027813A (en) * 2008-07-18 2010-02-04 Mitsubishi Electric Corp Power semiconductor device
JP2010283107A (en) * 2009-06-04 2010-12-16 Mitsubishi Electric Corp Semiconductor module
JP2011150833A (en) * 2010-01-20 2011-08-04 Mitsubishi Electric Corp Semiconductor device
JP2011233753A (en) * 2010-04-28 2011-11-17 Mitsubishi Electric Corp Semiconductor device and semiconductor device manufacturing method
WO2014148319A1 (en) * 2013-03-21 2014-09-25 富士電機株式会社 Contact component and semiconductor module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010027813A (en) * 2008-07-18 2010-02-04 Mitsubishi Electric Corp Power semiconductor device
JP2010283107A (en) * 2009-06-04 2010-12-16 Mitsubishi Electric Corp Semiconductor module
JP2011150833A (en) * 2010-01-20 2011-08-04 Mitsubishi Electric Corp Semiconductor device
JP2011233753A (en) * 2010-04-28 2011-11-17 Mitsubishi Electric Corp Semiconductor device and semiconductor device manufacturing method
WO2014148319A1 (en) * 2013-03-21 2014-09-25 富士電機株式会社 Contact component and semiconductor module

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