JP2019165152A - Semiconductor device, semiconductor device manufacturing method, and semiconductor integrated circuit device manufacturing method - Google Patents

Abstract

To provide a semiconductor device that reduces the influence of the outer knife edge shape caused by backside grinding of a semiconductor substrate and suppresses an increase in the number of obtained semiconductor integrated circuit devices and the deterioration in quality, a semiconductor device manufacturing method, and a semiconductor integrated circuit device manufacturing method.SOLUTION: A semiconductor device includes a semiconductor substrate 101 provided with a chamfered portion 104 on the outer periphery, and a chamfering compensation unit 107 provided on the surface of the chamfered portion 104 and formed to have a substantially rectangular shape in a cross-sectional view.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device, a semiconductor device manufacturing method, and a semiconductor integrated circuit device manufacturing method.

  With the recent miniaturization of electronic components, semiconductor integrated circuit devices mounted on the electronic components have always received requests for miniaturization. In order to meet such a demand, in the manufacture of a semiconductor integrated circuit device, the thickness in the height direction can be reduced simultaneously with the reduction in the chip size in the planar direction. In order to reduce the height of the semiconductor integrated circuit device, before the semiconductor substrate is divided into individual semiconductor integrated circuit devices, the back surface of the semiconductor substrate is ground so that the thickness is reduced.

  As shown in FIG. 6A, a semicircular chamfered portion 204 is generally formed on the outer periphery of the semiconductor substrate 201. Therefore, when the back surface of the semiconductor substrate 201 is ground to a thickness that is less than half of its thickness and the thickness is reduced, a so-called knife edge shape in which the remaining chamfered portion 204 is sharp as shown in FIG. 6B is generated. To do. Therefore, during grinding of the back surface of the semiconductor substrate or in a later process, the chamfered portion is cracked or chipped due to contact or vibration to the periphery, and formed on the outer periphery of the surface of the semiconductor substrate 201 by the crack or chipped. There is a risk that the quality of the semiconductor integrated circuit device being used will be deteriorated.

  In Patent Document 1, before grinding the back surface of the semiconductor substrate, the chamfered portion is removed by a cutting blade, and the shape of the chamfered portion is processed into a shape perpendicular to the front surface and the back surface. A technique for suppressing the occurrence of a knife edge shape later is disclosed.

JP 2011-103389 A

  In the processing method disclosed in Patent Document 1, the region inside the outermost periphery of the semiconductor substrate at the time of removing the chamfered portion is cut by cutting the region outside the region where the semiconductor integrated circuit device is formed. Suppresses the generation of cracks and chips due to vibrations. However, since vibration in cutting is not completely suppressed, it is difficult to completely eliminate the deterioration in quality due to cracks or chips in the semiconductor integrated circuit device. In addition, since the region to be cut in this processing method is a region inside from the outermost periphery of the semiconductor substrate, it is necessary to install the semiconductor integrated circuit device further inside the margin region in order to secure such a margin region. Therefore, it is difficult to increase the number of semiconductor integrated circuit devices obtained from one semiconductor substrate.

  In view of the above points, the present invention reduces the influence of the knife edge shape after back grinding of a semiconductor device, and can realize a reduction in quality due to cracks and chipping and an increase in the number of semiconductor integrated circuit devices that can be taken. An object of the present invention is to provide a method for manufacturing a semiconductor device and a method for manufacturing a semiconductor integrated circuit device.

  In order to solve the above problems, the present invention provides the following semiconductor device, semiconductor device manufacturing method, and semiconductor integrated circuit device manufacturing method.

  That is, a semiconductor comprising: a semiconductor substrate having a chamfered portion on the outer periphery; and a chamfer compensating portion provided on a surface of the chamfered portion and formed in a substantially rectangular shape in a sectional view. A device.

  In addition, a semiconductor integrated circuit device is formed on the surface, and a semiconductor substrate having a chamfered portion on the outer periphery is installed such that the surface of the semiconductor substrate faces the bottom surface of the recess of the semiconductor substrate support device having a recess, Supplying a chemical solution to a gap between the inner surface of the recess of the semiconductor substrate support device and the outer periphery of the semiconductor substrate; and curing the chemical solution so that the chamfering compensation unit has a substantially rectangular shape in a cross-sectional view. A method of manufacturing a semiconductor device, comprising: a step of forming; and a step of grinding a back surface of the semiconductor substrate to reduce a thickness thereof.

  And a step of dicing the region between the regions where the semiconductor integrated circuit is formed on the surface of the semiconductor device.

  According to the present invention, a chamfer compensation portion is provided on the surface of a chamfered portion on the outer periphery of a semiconductor substrate, and a semiconductor device having a substantially rectangular shape in a cross-sectional view is obtained. Quality degradation due to cracks and chips can be suppressed. Further, there is no need to secure a margin area for processing the chamfered portion on the outer periphery of the semiconductor substrate, and the semiconductor integrated circuit device can be formed up to the outer periphery of the semiconductor substrate. Therefore, an increase in the number of semiconductor integrated circuit devices can be realized.

(A) is a top view which shows the semiconductor device in embodiment of this invention, (b) is sectional drawing before the back surface grinding in the principal part of AA 'shown to Fig.1 (a), ( (c) is sectional drawing after back surface grinding in the principal part of AA 'shown to Fig.1 (a). 1 is a peripheral processing apparatus for a semiconductor substrate in an embodiment of the present invention. (A) is a top view of the formwork which installed the semiconductor substrate in embodiment of this invention, (b) is sectional drawing in B-B 'shown to Fig.2 (a). It is a flowchart figure which shows the main processes of the manufacturing method of the semiconductor device and semiconductor integrated circuit device in embodiment of this invention. It is sectional drawing after resin filling in the principal part of BB 'shown to Fig.3 (a), (b) is another after the resin filling in the principal part of BB' shown to Fig.3 (a). It is sectional drawing. (A) is sectional drawing before the back surface grinding in the principal part of the conventional semiconductor substrate, (b) is sectional drawing after the back surface grinding in the principal part of the conventional semiconductor substrate.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings as appropriate. The drawings used in the following description may be partially omitted or enlarged for easy understanding of the features of the present invention, and may differ from actual dimensional ratios.

  FIG. 1A is a plan view of a semiconductor device 10 having a semiconductor integrated circuit device (not shown) on its surface according to an embodiment of the present invention. FIG. 1B is a cross-sectional view of the outer peripheral portion when the semiconductor device 10 is cut along the line AA ′ in FIG. ) Is a cross-sectional view after the back surface grinding (the back surface of the semiconductor substrate 101 is the upper side in the drawing). In FIG. 1C, from the state of FIG. 1B, the back surface of the semiconductor substrate 101 on the upper side of the paper is ground to reduce its thickness.

  As shown in FIG. 1A, the semiconductor device 10 includes a semiconductor substrate 101 and a chamfering compensation unit 107 added to the outer periphery thereof.

  The semiconductor substrate 101 has a circular shape in plan view, and a discontinuous portion 105 such as an oriental flat or a notch is formed on a part of the outer periphery thereof. On the surface of the semiconductor substrate 101, division planned lines called dicing lines formed in a lattice shape and a semiconductor integrated circuit device are formed in a region partitioned by the dicing lines (not shown). The outer periphery of the semiconductor substrate 101 is provided with a chamfered portion that is rounded in a sectional view and has a semicircular arc shape. The shape of the chamfered portion is the same as that of the chamfered portion 204 shown in FIG.

  As shown in FIG. 1B, a chamfer compensator 107 is provided on the outer periphery of the semiconductor substrate 101 on the surface of the chamfered portion in the direction from the center of the semiconductor substrate 101 to the outer periphery. The chamfer compensator 107 is formed without a break along the circular portion and the discontinuous portion 105 on the outer periphery of the semiconductor substrate 101 in plan view. The semiconductor device 10 in which the semiconductor substrate 101 and the chamfering compensation unit 107 are combined has a substantially rectangular shape in a cross-sectional view, and the shape remains substantially rectangular even after the back surface grinding. That is, the shape does not have to be a complete rectangle with all corners being 90 degrees, and may be a shape with rounded corners, for example.

  The chamfering compensation unit 107 is obtained by curing a chemical solution such as a resin, and its physical strength is substantially equal to that of the semiconductor substrate 101. Therefore, at the time of subsequent grinding of the back surface of the semiconductor substrate 101, the grinding speed and the shape during grinding are not changed by the chamfering compensation unit 107 ground at the same time.

  As shown in FIG. 1C, in the semiconductor device 10 after the back surface is ground, the semiconductor substrate 101 has a so-called knife edge shape with a sharp chamfer 104 on the outer periphery thereof. The shape of the chamfer 104 shown in FIG. 1C is the same as that of the chamfer 204 shown in FIG.

  On the surface of the chamfered portion 104, a chamfer compensator 107 having a thickness reduced together with the semiconductor substrate 101 is added so as to eliminate the knife edge shape. The overall shape of the semiconductor substrate 101 and the chamfering compensation unit 107 is substantially rectangular in cross-sectional view even after back grinding. The semiconductor device 10 according to the present embodiment does not change its thickness in a cross-sectional view and does not generate a knife edge shape no matter how the thickness is changed by grinding the back surface.

  The semiconductor device 10 according to the present embodiment in which the knife edge shape is not generated by the back surface grinding can suppress the generation of cracks or chips due to the back surface grinding or vibration during dicing. Therefore, the deterioration of the quality of the semiconductor integrated circuit device formed near the outer periphery of the surface of the semiconductor substrate 101 is suppressed. Further, since it is not necessary to remove the chamfered portion 104, the semiconductor integrated circuit obtained from one semiconductor substrate is compared with Patent Document 1 in which the semiconductor integrated circuit device is provided with a margin area from the outer periphery of the semiconductor substrate 101 and installed inside. An increase in the number of devices can be realized.

  FIG. 2 is a cross-sectional view of the main configuration of the semiconductor substrate peripheral processing apparatus 100 according to the embodiment of the present invention. The semiconductor substrate peripheral processing apparatus 100 includes a chamber 17, a rotary stage 16, a mold 102, a supply nozzle 12, a valve 13, a chemical liquid supply apparatus 14, and a chemical liquid tank 15 filled with the chemical liquid.

  The rotary stage 16 is installed in the chamber 17, and fixes and rotates the mold 102 installed on the rotary stage 16. The rotary stage 16 fixes the mold 102 by, for example, vacuum suction. In that case, the rotary stage 16 has a large number of suction holes for sucking air on the surface thereof.

  The mold 102 is provided with a recess 106 having a size capable of installing the semiconductor substrate 101. While the rotary stage 16 is rotating, the semiconductor substrate 101 installed in the recess 106 of the mold 102 rotates simultaneously with the mold 102 installed on the rotary stage 16.

  The supply nozzle 12 is installed in the upper part of the outer peripheral area of the recess 106 of the mold 102, and supplies the chemical solution 11 to the gap between the outer periphery of the semiconductor substrate 101 in the recess 106 and the inner surface of the recess 106. The supply nozzle 12 supplies the chemical solution 11 for a certain period of about several seconds to several tens of seconds while the rotary stage 16 rotates, and a gap between the outer peripheral portion of the semiconductor substrate 101 and the inner surface of the concave portion 106 of the mold 102 is formed. All are filled with chemical solution 11. This chemical solution 11 later becomes a chamfering compensation unit for reducing the influence of the knife edge shape after semiconductor substrate grinding.

  The valve 13 and the chemical solution supply device 14 are controlled so as to supply the chemical solution 11 from the chemical solution tank 15 while the rotary stage 16 is rotating. The chemical solution supply device 14 sends the chemical solution 11 from the chemical solution tank 15 to the valve 13 by, for example, a pump method or a pressurization method. The chemical solution 11 sent from the chemical solution supply device 14 to the valve 13 is supplied to the supply nozzle 12 when the valve 13 is switched from closed to open.

  The chemical solution 11 has plasticity, and is filled in the entire gap between the outer periphery of the semiconductor substrate 101 and the inner surface of the recess 106 of the mold 102 by being supplied from the supply nozzle 12. At the same time, the chemical solution 11 has curability and can be fixed to the outer periphery of the semiconductor substrate 101 by the subsequent application of heat to be cured to a physical strength comparable to that of the semiconductor substrate 101.

The chemical solution 11 may be made of any material as long as it has such properties. For example, you may employ | adopt the polyimide resin hardened | cured by heating. Moreover, a thermosetting imparting ultraviolet resin may be used. When the thermosetting imparting type ultraviolet resin is employed, curing is performed by heating and ultraviolet irradiation, so that the curing time can be shortened compared to the case of heating alone, and the manufacturing cost can be reduced. Alternatively, a plastic resin containing granular silica filler made of SiO ₂ may be used. When such a plastic resin is employed, the physical strength after curing can be adjusted by appropriately changing the content ratio of the silica filler, and it becomes easy to match the physical strength of the semiconductor substrate 101. Therefore, when grinding the back surface of the semiconductor substrate 101, it is easy to reduce grinding unevenness due to a difference in physical strength between the semiconductor substrate 101 and the hardened chemical solution 11 and thickness variations of the semiconductor integrated circuit device due to this.

  Next, the formation of the chamfer compensation part on the outer periphery of the semiconductor substrate 101 will be described in detail. FIG. 3A is a plan view when the semiconductor substrate 101 is installed on the mold 102. FIG. 3B is a cross-sectional view of the mold 102 on which the semiconductor substrate 101 shown in FIG. 3A is installed, cut along the line B-B ′.

  The mold 102 is provided with a recess 106 in which a semiconductor substrate 101 in which a discontinuous portion 105 such as an oriental flat or a notch is formed on the outer peripheral portion can be placed. The radius of the recess 106 in the circular shape is formed to be about 1 mm larger than the radius of the circular shape of the semiconductor substrate 101. In addition, the discontinuous portion 105 of the semiconductor substrate 101 has a planar shape enlarged to about 1 mm in accordance with the shape of the portion. The size of the gap between the outer periphery of the semiconductor substrate 101 and the inner side surface of the recess 106 may be arbitrarily changed, and the size of the chamfering compensation portion is changed depending on the size of the gap.

  The depth of the recess 106 is the same as or shallower than the thickness of the semiconductor substrate 101 before the back surface grinding. If the depth of the recess 106 is deeper than the thickness of the semiconductor substrate 101, the chemical solution 11 accumulates on the back surface of the semiconductor substrate 101 during the subsequent supply of the chemical solution 11, and the thickness including the semiconductor substrate 101 is the thickness of the semiconductor substrate 101. Will be exceeded. When the thickness of the chemical solution 11 attached to the thickness of the semiconductor substrate 101 increases, the time required for the back surface grinding of the semiconductor substrate 101 becomes longer. Therefore, the depth of the recess 106 is preferably the same as or shallower than the thickness of the semiconductor substrate 101.

  The mold 102 is provided with a plurality of suction holes 108 penetrating to the back surface of the mold 102 on the bottom surface of the recess 106. With this suction hole 108, the semiconductor substrate 101 is sucked and fixed to the mold 102 in the vacuum suction of the rotary stage 16. On the back surface other than the suction holes 108 of the mold 102, the mold 102 is fixed to the rotary stage 16 because of vacuum suction of the mold 102 by the suction holes of the rotary stage 16. It can be said that the mold 102 is a semiconductor substrate supporting device having a role of fixing the semiconductor substrate 101 so as not to be displaced while the rotary stage 16 is rotating.

  The bottom surface of the recess 106 in the mold 102 may have a porous structure made of ceramic, organic polymer, resin, or the like. In that case, the mold 102 is cheaper than processing and forming a large number of suction holes 108 one by one, and can have a high suction force.

  The semiconductor substrate 101 is placed in the recess 106 of the mold 102 so that the surface on which the semiconductor integrated circuit device is formed faces downward on the paper surface and faces the bottom surface of the recess 106. Therefore, when the chemical solution 11 is filled in the outer peripheral portion of the semiconductor substrate 101 later, the surface of the semiconductor substrate 101 is not exposed and is firmly adhered to the bottom surface of the concave portion 106 by vacuum suction. Adhesion to the surface of the substrate 101 is suppressed. Accordingly, the resin adheres to bonding pads on the surface of the semiconductor substrate 101, laser trimming, light transmission to the light detection element, etc., and various problems occur in the semiconductor integrated circuit device such as bonding failure. Can be prevented.

  On the other hand, the chemical solution 11 may adhere to the back surface of the semiconductor substrate 101 unless the thickness is excessively increased. Even if the chemical solution 11 adheres to the back surface of the semiconductor substrate 101, it is removed at the time of grinding the back surface of the semiconductor substrate 101, so that the function of the semiconductor integrated circuit device is not impaired.

  4A and 4B are enlarged cross-sectional views of the vicinity of the chamfered portion 104 after the chemical liquid 11 is filled in the gap between the outer periphery of the semiconductor substrate 101 and the inner surface of the concave portion 106 of the mold 102. . As shown in FIG. 4A, when all the gaps are filled with the chemical solution 11, the semicircular chamfered portion 104 is supplemented with the chemical solution 11, and the entire cross-sectional shape including the semiconductor substrate 101 becomes a substantially rectangular shape. For this reason, even if the semiconductor substrate 101 is ground from the back surface in a later process, a knife edge shape does not occur.

  FIG. 5 is a flowchart showing the main steps of the semiconductor device and semiconductor integrated circuit device manufacturing method according to the embodiment of the present invention. As shown in FIG. 5, the semiconductor device manufacturing method according to the embodiment of the present invention includes a semiconductor substrate support device installation step (S101), a chemical solution supply step (S102), a chemical solution curing step (S103), and a back grinding step (S104). Including a series of steps. The method for manufacturing a semiconductor integrated circuit in the embodiment of the present invention further includes a dicing step (S105).

  First, as a semiconductor substrate support device installation step (S101), a mold 102 on which a semiconductor integrated circuit device is formed on the surface and a semiconductor substrate 101 having a chamfered portion on the outer periphery is installed in a recess 106 is placed on the rotary stage 16. Install. The recess 106 has a circular shape and a discontinuous shape similar to those of the semiconductor substrate 101 in the planar shape, and the depth is the same as or shallower than the thickness of the semiconductor substrate 101. The semiconductor substrate 101 is placed on the bottom surface of the recess 106 so that the surface of the semiconductor substrate 101 on which the semiconductor integrated circuit device is formed is opposed.

  Next, as a chemical solution supply step (S <b> 102), the chemical solution 11 is supplied to the gap between the inner surface of the recess 106 of the mold 102 and the outer periphery of the semiconductor substrate 101. The chemical solution 11 employs a resin having both the plasticity that enters the gap between the inner side surface of the recess 106 and the outer periphery of the semiconductor substrate 101 and the curability that can obtain the same physical strength as the semiconductor substrate 101 in the subsequent processing. To do. The chemical solution 11 is supplied from the supply nozzle 12 installed at the upper part of the outer periphery of the concave portion 106 of the mold 102 while rotating the rotary stage 16, so that the gap between the chemical solution 11 and the semiconductor substrate 101 is uniformly filled.

  The supply amount of the chemical solution 11 is adjusted with high accuracy by installing a liquid level sensor that can detect the height of the chemical solution 11 in the gap between the inner surface of the recess 106 of the mold 102 and the outer periphery of the semiconductor substrate 101. Can be done (not shown). The supply amount is preferably set to a level slightly exceeding the height of the back surface of the semiconductor substrate 101. After filling the chemical solution 11 in the gap with the semiconductor substrate 101 in this way, the supply of the chemical solution 11 from the supply nozzle 12 is stopped, and the rotary stage 16 is continuously rotated. The remaining chemical solution 11 is removed. In this way, after the chemical solution supply process is finished, as shown in FIG. 4A, the chemical solution is placed in the gap between the inner surface of the recess 106 of the mold 102 and the chamfered portion 104 on the outer periphery of the semiconductor substrate 101. 11 is filled. This chemical solution 11 has a shape along the inner surface of the mold 102 in the vicinity of the chamfered portion 104. That is, a substantially rectangular shape as a whole including the semiconductor substrate 101 can be formed in a cross-sectional view. Further, the chemical solution 11 does not remain on the back surface of the semiconductor substrate 101 which is the upper side of the paper surface.

  Next, as a chemical solution curing step (S103), the mold 102 on which the semiconductor substrate 101 is installed is subjected to heat treatment, ultraviolet irradiation, etc., and the chemical solution 11 is cured until it has a physical strength comparable to that of the semiconductor substrate 101, A chamfer compensation unit 107 is formed. This heating may be a method of installing in a heated furnace or a method of installing on a hot plate. Or the local heating only of the part of the chemical | medical solution 11 by laser irradiation may be sufficient.

  After the chemical solution 11 is cured, the semiconductor substrate 101 with the chamfering compensation unit 107 fixed to the chamfering unit 104 is removed from the mold 102. Usually, when heat is applied to the chemical solution 11 made of resin, volume shrinkage occurs simultaneously in the curing process, and the resin is separated from the inner surface of the concave portion 106 of the mold 102 to the inside. Therefore, after that, it is easy to remove the semiconductor substrate 101 to which the chamfering compensation portion 107 is fixed from the mold 102. However, in the case of a plastic resin containing a silica filler, the occurrence of volume shrinkage is suppressed as the silica filler content increases. In that case, it is desirable to take measures such as adding a release agent before filling the resin in order to facilitate the peeling of the chamfering compensation portion 107 from the mold 102. This semiconductor device 10 can be processed in the same manner as a normal semiconductor substrate 101.

  Next, as a back surface grinding step (S104), the semiconductor device 10 is ground from the back surface and thinned to a desired thickness. At this time, since the outer peripheral shape of the semiconductor device 10 in a cross-sectional view is a substantially rectangular shape, a knife edge shape does not occur even if the thickness is reduced to any thickness.

  Next, as a dicing step (S105) for manufacturing the semiconductor integrated circuit device, a region between the regions of the semiconductor device 10 where the semiconductor integrated circuit device is formed is diced and divided. At this time, like the semiconductor substrate 101, the chamfering compensation unit 107 is divided by a dicing blade or the like. Since the chamfering compensation unit 107 has the same physical strength as that of the semiconductor substrate 101, dicing defects such as chipping are suppressed. The chamfering compensation unit 107 is discarded after the dicing process together with debris on the outer periphery of the semiconductor substrate 101 and the like.

  By adopting the manufacturing method of the semiconductor device and the semiconductor integrated circuit device as described above, the influence of the knife edge shape after grinding the back surface of the semiconductor substrate 101 in the semiconductor device can be reduced by the chamfer compensation unit 107, and the semiconductor integrated Quality degradation due to cracks or chipping in the circuit device can be suppressed. Further, it is not necessary to secure a margin area for processing the chamfered portion 104 on the outer periphery of the semiconductor substrate 101, and the semiconductor integrated circuit device can be formed up to the outer periphery of the surface of the semiconductor substrate 101. Therefore, the number of semiconductor integrated circuit devices obtained from one semiconductor substrate can be increased, and the cost of the semiconductor integrated circuit device can be reduced.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

  For example, in the chemical solution supplying step (S102) in the method for manufacturing a semiconductor device, the supply amount of the chemical solution 11 is set to be slightly higher than the height of the back surface of the semiconductor substrate 101, but the method is not limited thereto.

  FIG. 4B is a cross-sectional view showing the main part of the outer periphery of the semiconductor substrate 101 when the supply amount of the chemical solution 11 is set to a value slightly exceeding half of the thickness of the semiconductor substrate 101. By reducing the supply amount of the chemical solution 11, the material cost can be suppressed. On the other hand, on the lower surface of the chamfered portion 104 on the outer periphery of the semiconductor substrate 101 filled with the chemical solution 11, the chemical solution 11 has a rectangular shape along the shape of the inner surface of the recess 106 of the mold 102. Therefore, even when grinding of the back surface of the semiconductor substrate 101 is performed in an amount exceeding half of the thickness of the semiconductor substrate 101, a knife edge shape is generated by the chamfer compensator 107 which can be obtained by curing the rectangular chemical solution 11. There is nothing.

In addition, the recess 106 of the mold 102 is preferably the same depth as the thickness of the semiconductor substrate 101. However, when the supply amount of the chemical solution 11 is not filled up to the height of the back surface of the semiconductor substrate 101 as shown in FIG. 4B, the depth of the recess 106 is shallower than the thickness of the semiconductor substrate 101 according to the filling height. It doesn't matter.

DESCRIPTION OF SYMBOLS 11 Chemical solution 12 Supply nozzle 13 Valve 14 Chemical solution supply apparatus 15 Chemical solution tank 16 Rotation stage 17 Chamber 101, 201 Semiconductor substrate 102 Mold frame 104, 204 Chamfer 105 Discontinuous part 106 Recess 107 Chamfer compensation part 108 Adsorption hole

Claims (6)

A semiconductor substrate having a chamfered portion on the outer periphery;
A chamfer compensator provided on a surface of the chamfered portion and formed to have a substantially rectangular shape in a cross-sectional view.   The semiconductor device according to claim 1, wherein the chamfer compensation unit is a resin containing a silica filler. A semiconductor substrate having a semiconductor integrated circuit device formed on the surface and having a chamfered portion on the outer periphery is placed on the bottom surface of the recess of the semiconductor substrate support device having a recess so that the surface of the semiconductor substrate faces the semiconductor substrate. Supplying a chemical to the gap between the inner surface of the recess of the support device and the outer periphery of the semiconductor substrate;
Curing the chemical solution and forming a chamfering compensation portion so as to have a substantially rectangular shape in cross-sectional view;
Grinding the back surface of the semiconductor substrate to reduce the thickness, and a method for manufacturing a semiconductor device.   The method for manufacturing a semiconductor device according to claim 3, wherein the chemical solution is a resin containing a silica filler and is cured by applying heat to the chemical solution.   The method for manufacturing a semiconductor device according to claim 3, wherein the chemical solution is a thermosetting imparting ultraviolet resin, and the chemical solution is cured by applying heat and irradiating with ultraviolet rays.   6. A semiconductor integrated circuit device according to claim 3, further comprising a step of dicing a region between the regions where the semiconductor integrated circuit is formed on the surface of the semiconductor device. Manufacturing method.

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