JP2019133994A5 - - Google Patents
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- JP2019133994A5 JP2019133994A5 JP2018012842A JP2018012842A JP2019133994A5 JP 2019133994 A5 JP2019133994 A5 JP 2019133994A5 JP 2018012842 A JP2018012842 A JP 2018012842A JP 2018012842 A JP2018012842 A JP 2018012842A JP 2019133994 A5 JP2019133994 A5 JP 2019133994A5
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- light receiving
- receiving element
- light emitting
- emitting element
- light
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- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 230000002093 peripheral Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
Description
本発明の第１の態様によると、半導体装置は、所定の領域に穴が形成された受光素子と、前記受光素子の前記穴内に設けられる発光素子収容部を有するリードフレームと、前記リードフレームの前記発光素子収容部の底面に向けられた発光素子と、前記受光素子の外周に沿って設けられ、前記リードフレームから分離して形成されたリード端子と、前記受光素子の周縁部を覆う第１樹脂と、を有し、前記受光素子の表面と前記発光素子の表面とが、実質的に同一平面上に位置する。
本発明の第２の態様によると、半導体装置は、所定の領域に穴が形成された受光素子と、前記受光素子の前記穴内に設けられた発光素子と、前記受光素子の周縁部を覆う第１樹脂と、を有し、前記受光素子の表面と前記発光素子の表面とが、実質的に同一平面上に位置する半導体装置であって、前記受光素子は、第１受光部と第２受光部と、前記第１受光部と前記第２受光部を接続し、前記第１受光部および前記第２受光部よりも薄肉の接続部とを有し、前記受光素子の前記穴は、前記接続部に形成されている。
本発明の第３の態様によると、半導体装置は、ほぼ中央に穴が形成された受光素子と、前記受光素子の前記穴内に配置された発光素子と、前記受光素子の外周に配置されたリード端子と、前記発光素子の第１の電極と前記受光素子を接続する第１のワイヤと、前記発光素子の第２の電極と前記リード端子を接続する第２のワイヤと、前記受光素子の受光面および前記発光素子の第１の電極を露出して、前記発光素子、前記受光素子、前記リード端子および前記第２のワイヤを封止する樹脂と、を備え、前記受光素子の受光面と前記発光素子の前記第１の電極の表面とが、実質的に同一平面上に位置する。
本発明の第４の態様によると、半導体装置は、ほぼ中央に穴が形成された受光素子と、前記受光素子の前記穴内に配置された発光素子と、前記受光素子および前記発光素子が取り付けられ、前記発光素子が導電性接合材により接合されたリードフレームと、前記受光素子の外周に沿って設けられ、前記リードフレームから分離して形成されたリード端子と、前記発光素子の電極と前記受光素子の第１の電極を接続する第１のワイヤと、前記受光素子の第２の電極と前記リード端子を接続する第２のワイヤと、前記受光素子の受光面および前記発光素子の電極を露出して、前記受光素子の周縁部、前記第２のワイヤ、前記リード端子および前記リードフレームの周縁部を封止する樹脂とを備え、前記受光素子の受光面と前記発光素子の前記電極の表面とが、実質的に同一平面上に位置する。
According to the first aspect of the present invention , a semiconductor device includes a light receiving element having a hole formed in a predetermined region, a lead frame having a light emitting element receiving portion provided in the hole of the light receiving element, and A light emitting element directed toward the bottom surface of the light emitting element housing; a lead terminal provided along an outer periphery of the light receiving element; and formed separately from the lead frame; and a first covering the peripheral edge of the light receiving element . And the surface of the light receiving element and the surface of the light emitting element are located on substantially the same plane.
According to the second aspect of the present invention, a semiconductor device includes a light receiving element having a hole formed in a predetermined region, a light emitting element provided in the hole of the light receiving element, and a peripheral portion of the light receiving element. 1 is a semiconductor device in which the surface of the light receiving element and the surface of the light emitting element are located on substantially the same plane, wherein the light receiving element includes a first light receiving unit and a second light receiving unit. Connecting the first light-receiving part and the second light-receiving part, and having a connection part thinner than the first light-receiving part and the second light-receiving part, and the hole of the light-receiving element has the connection It is formed in the part.
According to the third aspect of the present invention, a semiconductor device includes a light receiving element having a hole formed substantially in the center, a light emitting element disposed in the hole of the light receiving element, and a lead disposed on an outer periphery of the light receiving element. A terminal, a first wire connecting the first electrode of the light emitting element and the light receiving element, a second wire connecting the second electrode of the light emitting element and the lead terminal, and light reception of the light receiving element A resin that exposes the surface and the first electrode of the light emitting element, and seals the light emitting element, the light receiving element, the lead terminal, and the second wire, and the light receiving surface of the light receiving element and the resin The surface of the first electrode of the light emitting element is substantially on the same plane.
According to the fourth aspect of the present invention, a semiconductor device includes a light receiving element having a hole formed substantially in the center, a light emitting element disposed in the hole of the light receiving element, the light receiving element, and the light emitting element. A lead frame in which the light emitting element is bonded by a conductive bonding material; a lead terminal provided along an outer periphery of the light receiving element; and formed separately from the lead frame; an electrode of the light emitting element; A first wire connecting the first electrode of the element, a second wire connecting the second electrode of the light receiving element and the lead terminal, a light receiving surface of the light receiving element, and an electrode of the light emitting element are exposed. And a resin that seals the peripheral edge of the light receiving element, the second wire, the lead terminal, and the peripheral edge of the lead frame, and the light receiving surface of the light receiving element and the electrode of the light emitting element And the surface is substantially coplanar.
Claims (9)
前記受光素子の前記穴内に設けられる発光素子収容部を有するリードフレームと、
前記リードフレームの前記発光素子収容部の底面に設けられた発光素子と、
前記受光素子の外周に沿って設けられ、前記リードフレームから分離して形成されたリード端子と、
前記受光素子の周縁部を覆う第１樹脂と、を有し、
前記受光素子の表面と前記発光素子の表面とが、実質的に同一平面上に位置する半導体装置。 A light receiving element in which a hole is formed in a predetermined region;
A lead frame having a light emitting element housing provided in the hole of the light receiving element;
A light emitting element provided on a bottom surface of the light emitting element accommodating portion of the lead frame;
A lead terminal provided along an outer periphery of the light receiving element and formed separately from the lead frame;
A first resin covering a peripheral edge of the light receiving element ,
A semiconductor device in which a surface of the light receiving element and a surface of the light emitting element are located on substantially the same plane.
前記受光素子と前記リード端子とを接続する第１のワイヤと、
前記発光素子の電極と前記受光素子とを接続する第２のワイヤとを備え、
前記第１樹脂は、前記第１のワイヤを封止する半導体装置。 The semiconductor device according to claim 1 ,
A first wire connecting the light receiving element and the lead terminal;
A second wire connecting the electrode of the light emitting element and the light receiving element;
Wherein the first resin is pre Symbol semiconductor device for sealing the first wire.
前記発光素子は、導電性接合材により前記リードフレームの前記発光素子収容部の底面に接合されている半導体装置。 The semiconductor device according to claim 1,
The semiconductor device, wherein the light emitting element is bonded to a bottom surface of the light emitting element housing portion of the lead frame by a conductive bonding material .
前記受光素子の前記穴内に設けられた発光素子と、
前記受光素子の周縁部を覆う第１樹脂と、を有し、
前記受光素子の表面と前記発光素子の表面とが、実質的に同一平面上に位置する半導体装置であって、
前記受光素子は、第１受光部と第２受光部と、前記第１受光部と前記第２受光部を接続し、前記第１受光部および前記第２受光部よりも薄肉の接続部とを有し、前記受光素子の前記穴は、前記接続部に形成されている半導体装置。 A light receiving element in which a hole is formed in a predetermined region;
A light emitting element provided in the hole of the light receiving element;
A first resin covering a peripheral edge of the light receiving element,
The surface of the light receiving element and the surface of the light emitting element are substantially the same plane and are a semiconductor device,
The light receiving element includes a first light receiving unit, a second light receiving unit, a connection between the first light receiving unit and the second light receiving unit, and a connection portion thinner than the first light receiving unit and the second light receiving unit. And the hole of the light receiving element is formed in the connection portion.
さらに、前記受光素子の前記接続部を収容する凹部を有する基板を備え、前記受光素子が収容された前記凹部内に、第２樹脂が充填されている半導体装置。 The semiconductor device according to claim 4,
Further, a semiconductor device comprising a substrate having a concave portion that accommodates the connection portion of the light receiving element, wherein the concave portion in which the light receiving element is accommodated is filled with a second resin.
前記第２樹脂は、前記基板と前記受光素子との間のギャップ内にも充填されている半導体装置。 The semiconductor device according to claim 5,
The semiconductor device in which the second resin is also filled in a gap between the substrate and the light receiving element.
前記受光素子の前記穴内に配置された発光素子と、
前記受光素子の外周に配置されたリード端子と、
前記発光素子の第１の電極と前記受光素子を接続する第１のワイヤと、
前記発光素子の第２の電極と前記リード端子を接続する第２のワイヤと、
前記受光素子の受光面および前記発光素子の第１の電極を露出して、前記発光素子、前記受光素子、前記リード端子および前記第２のワイヤを封止する樹脂と、を備え、
前記受光素子の受光面と前記発光素子の前記第１の電極の表面とが、実質的に同一平面上に位置する半導体装置。 A light-receiving element having a hole formed substantially in the center ;
A light emitting element disposed in the hole of the light receiving element;
A lead terminal disposed on the outer periphery of the light receiving element;
A first wire connecting the first electrode of the light emitting element and the light receiving element;
A second wire connecting the second electrode of the light emitting element and the lead terminal;
A resin that exposes the light receiving surface of the light receiving element and the first electrode of the light emitting element and seals the light emitting element, the light receiving element, the lead terminal, and the second wire;
A semiconductor device in which a light receiving surface of the light receiving element and a surface of the first electrode of the light emitting element are located on substantially the same plane .
前記受光素子の前記穴内に配置された発光素子と、
前記受光素子および前記発光素子が取り付けられ、前記発光素子が導電性接合材により接合されたリードフレームと、
前記受光素子の外周に沿って設けられ、前記リードフレームから分離して形成されたリード端子と、
前記発光素子の電極と前記受光素子の第１の電極を接続する第１のワイヤと、
前記受光素子の第２の電極と前記リード端子を接続する第２のワイヤと、
前記受光素子の受光面および前記発光素子の電極を露出して、前記受光素子の周縁部、前記第２のワイヤ、前記リード端子および前記リードフレームの周縁部を封止する樹脂とを備え、
前記受光素子の受光面と前記発光素子の前記電極の表面とが、実質的に同一平面上に位置する半導体装置。 A light-receiving element having a hole formed substantially in the center ;
A light emitting element disposed in the hole of the light receiving element;
A lead frame to which the light receiving element and the light emitting element are attached, and the light emitting element is bonded by a conductive bonding material;
A lead terminal provided along an outer periphery of the light receiving element and formed separately from the lead frame;
A first wire connecting the electrode of the light emitting element and the first electrode of the light receiving element;
A second wire connecting the second electrode of the light receiving element and the lead terminal;
A resin that exposes the light receiving surface of the light receiving element and the electrode of the light emitting element and seals the peripheral edge of the light receiving element, the second wire, the lead terminal, and the peripheral edge of the lead frame;
A semiconductor device in which a light receiving surface of the light receiving element and a surface of the electrode of the light emitting element are located on substantially the same plane .
前記受光素子の表面と前記発光素子の表面との高さの差は、１０μｍ以内である半導体装置。
In the semiconductor device according to any one of claims 1 to 8,
A semiconductor device wherein a difference in height between the surface of the light receiving element and the surface of the light emitting element is within 10 μm.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018012842A JP6620176B2 (en) | 2018-01-29 | 2018-01-29 | Semiconductor device |
| KR1020207018716A KR102459822B1 (en) | 2018-01-29 | 2018-12-21 | semiconductor device |
| CN201880087698.1A CN111656540B (en) | 2018-01-29 | 2018-12-21 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
| PCT/JP2018/047287 WO2019146339A1 (en) | 2018-01-29 | 2018-12-21 | Semiconductor device |
| TW108103065A TWI785195B (en) | 2018-01-29 | 2019-01-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018012842A JP6620176B2 (en) | 2018-01-29 | 2018-01-29 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019133994A JP2019133994A (en) | 2019-08-08 |
| JP2019133994A5 true JP2019133994A5 (en) | 2019-09-19 |
| JP6620176B2 JP6620176B2 (en) | 2019-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018012842A Active JP6620176B2 (en) | 2018-01-29 | 2018-01-29 | Semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6620176B2 (en) |
| KR (1) | KR102459822B1 (en) |
| CN (1) | CN111656540B (en) |
| TW (1) | TWI785195B (en) |
| WO (1) | WO2019146339A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7189994B2 (en) * | 2021-04-16 | 2022-12-14 | アオイ電子株式会社 | Semiconductor device and its manufacturing method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132535A (en) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | Manufacture of sensor |
| JPH06204508A (en) * | 1992-12-28 | 1994-07-22 | Canon Inc | Optical detector |
| JP3573400B2 (en) * | 1997-07-16 | 2004-10-06 | シャープ株式会社 | Optical input device |
| JP3684823B2 (en) * | 1998-03-26 | 2005-08-17 | 松下電工株式会社 | Semiconductor relay |
| JP3819664B2 (en) * | 2000-03-08 | 2006-09-13 | シャープ株式会社 | Optical coupling element |
| JP4812189B2 (en) * | 2001-06-15 | 2011-11-09 | オリンパス株式会社 | Optical detector |
| EP1376960A1 (en) | 2002-06-29 | 2004-01-02 | Deutsche Thomson-Brandt Gmbh | Data link layer device with two transmission modes for a serial communication bus |
| JP2004063764A (en) * | 2002-07-29 | 2004-02-26 | Toshiba Corp | Optically coupled semiconductor device and manufacturing method thereof |
| JP2005038956A (en) * | 2003-07-17 | 2005-02-10 | Matsushita Electric Ind Co Ltd | Optical component and manufacturing method thereof |
| JP4021382B2 (en) * | 2003-07-28 | 2007-12-12 | オリンパス株式会社 | Optical encoder, method of manufacturing the same, and optical lens module |
| JP4418278B2 (en) * | 2004-03-30 | 2010-02-17 | オリンパス株式会社 | Optical encoder and manufacturing method thereof |
| JP5381280B2 (en) * | 2009-04-23 | 2014-01-08 | オムロン株式会社 | Optical coupling device |
| KR101069197B1 (en) * | 2009-09-25 | 2011-09-30 | 전자부품연구원 | Integrated luminous element and Photodetector package module |
| WO2013190871A1 (en) * | 2012-06-20 | 2013-12-27 | アオイ電子株式会社 | Light source-integrated optical sensor |
| EP2860497B2 (en) * | 2013-10-09 | 2019-04-10 | SICK STEGMANN GmbH | Optoelectronic sensor and method for manufacturing the same |
| JP2015095584A (en) * | 2013-11-13 | 2015-05-18 | ローム株式会社 | Optical device and method of manufacturing optical device |
| JP2015177052A (en) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | Optical coupling device |
| US10199412B2 (en) * | 2014-07-25 | 2019-02-05 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules including an image sensor having regions optically separated from one another |
-
2018
- 2018-01-29 JP JP2018012842A patent/JP6620176B2/en active Active
- 2018-12-21 KR KR1020207018716A patent/KR102459822B1/en active IP Right Grant
- 2018-12-21 WO PCT/JP2018/047287 patent/WO2019146339A1/en active Application Filing
- 2018-12-21 CN CN201880087698.1A patent/CN111656540B/en active Active
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2019
- 2019-01-28 TW TW108103065A patent/TWI785195B/en active
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