JP2019112685A - Substrate treatment apparatus, plating apparatus, and substrate treatment method - Google Patents

Abstract

To process the edge part of a substrate appropriately before a plating treatment.SOLUTION: A substrate treatment apparatus for processing the edge part of a substrate comprises: an edge treatment part configured so as to adhere processing liquid to the edge part of the substrate; and a head part for sealing a first surface of the substrate along the edge part of the substrate so that the processing liquid does not contact the to-be-plated part of the substrate and the edge part of the substrate is exposed to the processing liquid.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate processing apparatus, a plating apparatus, and a substrate processing method.

  Conventionally, bumps are formed on fine grooves, holes, or resist openings provided on the surface of a semiconductor wafer or the like, or electrically connected to electrodes of a package or the like on the surface of a semiconductor wafer or the like. It is practiced to form an electrode). As a method of forming the wiring and the bumps, for example, electrolytic plating, vapor deposition, printing, ball bump, etc. are known, but with the increase in the number of I / Os of the semiconductor chip and the finer pitch, Electrolytic plating methods that can be used and whose performance is relatively stable have come to be widely used.

  In order to plate a substrate by electrolytic plating, a resist pattern is formed in advance on a substrate such as a semiconductor wafer on which a seed layer is formed. Subsequently, the substrate on which the resist pattern is formed is irradiated with ultraviolet light (hereinafter referred to as UV or Ultra Violet), etc. to remove the resist residue on the substrate surface (ashing treatment) and to hydrophilize the resist surface (discum treatment) )I do.

  The substrate subjected to the ashing treatment and the discum treatment is transported to the plating apparatus and held by the substrate holder. The substrate holder has electrical contacts for powering the substrate. The electrical contacts of the substrate holder are configured to contact the seed layer on the edge of the substrate where the resist is not applied when the substrate is held by the substrate holder. Such a substrate holder is disclosed, for example, in Patent Document 1. The substrate held by the substrate holder is immersed in a plating solution, and a voltage is applied between the anode and the substrate to form a plating film on the surface of the substrate.

JP, 2002-363794, A

  In the conventional plating method, the plating treatment is not performed immediately after the ashing treatment and the discum treatment. That is, the substrate is held by the substrate holder after a predetermined time has elapsed since the ashing process and the discum process are performed. At this time, an oxide film may be formed on the seed layer on the edge portion of the substrate or an organic substance volatilized from the resist may be attached depending on the elapsed time from the ashing treatment and the discum treatment. If an oxide film is formed on the seed layer on the edge of the substrate to which the electrical contacts of the substrate will come in contact, or if an organic substance adheres, the contact resistance of the electrical contacts on the substrate holder will vary and the plating thickness There is a problem that the uniformity deteriorates.

  In addition, the seed layer on the edge portion of the substrate is partially peeled off or thinned by any impact or the like on the substrate between the formation of the seed layer on the substrate surface and the transportation of the substrate to the plating apparatus. There is also a possibility. If the seed layer on the edge portion of the substrate becomes uneven, the contact resistances of the electrical contacts of the substrate holder may also vary, which may deteriorate the uniformity of the plated film thickness.

  The present invention has been made in view of the above problems, and one of the objects is to properly treat the edge portion of the substrate before the plating process.

  According to one aspect of the present invention, there is provided a substrate processing apparatus for processing an edge portion of a substrate. In this substrate processing apparatus, an edge processing unit configured to cause a processing solution to adhere to the edge portion of the substrate, and the processing solution does not contact the portion to be plated of the substrate, and the edge portion of the substrate performs the processing And a head portion for sealing the first surface of the substrate along the edge portion of the substrate so as to be exposed to the liquid.

  According to one aspect of the present invention, there is provided a plating apparatus comprising the substrate processing apparatus.

  According to one aspect of the present invention, there is provided a substrate processing method for processing an edge portion of a substrate. In this substrate processing method, the first surface of the substrate along the edge portion of the substrate such that the processing solution is not in contact with the portion to be plated of the substrate and the edge portion of the substrate is exposed to the processing solution. And an edge portion processing step of depositing a processing solution on the edge portion of the substrate.

It is a whole layout of the plating device concerning this embodiment. It is a perspective view of the substrate holder used with the plating apparatus shown in FIG. It is sectional drawing which shows the electric contact of the board | substrate holder shown in FIG. FIG. 2 is a partial side cross-sectional view of the substrate processing apparatus according to the present embodiment. It is a flowchart which shows the processing process of the edge part in a substrate processing apparatus. It is a fragmentary sectional side view of the substrate processing apparatus concerning other embodiment. It is a fragmentary sectional side view of the substrate processing apparatus concerning other embodiment. It is a fragmentary sectional side view of the substrate processing apparatus concerning other embodiment. It is a fragmentary sectional side view of the substrate processing apparatus concerning other embodiment. It is an expanded fragmentary sectional view which shows the contact point of a board | substrate and a sealing member. It is an expanded fragmentary sectional view which shows the contact point of a board | substrate and a sealing member.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and duplicate descriptions will be omitted. FIG. 1 is an overall layout view of a plating apparatus according to the present embodiment. As shown in FIG. 1, this plating apparatus is roughly divided into a load / unload section 170A for loading a substrate onto the substrate holder 60 or unloading the substrate from the substrate holder 60, and a processing section 170B for processing the substrate. Be

  The load / unload unit 170A includes three hoops (Front-Opening Unified Pod: FOUP) 102, an aligner 30 for aligning the position of the orientation flat (orientation flat) or notch of the substrate in a predetermined direction, and after plating A spin rinse dryer 20 for rotating and drying the substrate at a high speed and a substrate processing apparatus 40 for processing the edge portion of the substrate are provided. The hoop 102 accommodates a plurality of substrates such as semiconductor wafers in multiple stages. In the vicinity of the spin rinse dryer 20, there is provided a fixing unit 120 for mounting and removing the substrate holder 60. At the center of these units 102, 40, 20, 40 and 120, a substrate transfer device 122 composed of a transfer robot for transferring a substrate between these units is disposed.

  The fixing unit 120 is configured to be able to mount two substrate holders 60. In the fixing unit 120, after delivery of a substrate is performed between one substrate holder 60 and the substrate transfer device 122, delivery of a substrate is performed between the other substrate holder 60 and the substrate transfer device 122.

  The processing unit 170B of the plating apparatus includes a stocker 124, a pre-wet tank 126, a pre-soak tank 128, a first cleaning tank 130a, a blow tank 132, a second cleaning tank 130b, and the plating tank 10. In the stocker 124, storage and temporary placement of the substrate holder 60 are performed. In the pre-wet tank 126, the substrate is immersed in pure water. In the presoak tank 128, the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the substrate is etched away. In the first cleaning tank 130a, the substrate after pre-soaking is cleaned with the substrate holder 60 with a cleaning liquid (such as pure water). In the blow tank 132, the cleaned substrate is drained. In the second cleaning tank 130b, the substrate after plating is cleaned with the substrate holder 60 with a cleaning solution. The stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first washing tank 130a, the blow tank 132, the second washing tank 130 b, and the plating tank 10 are arranged in this order.

  The plating tank 10 has, for example, a plurality of plating cells 134 provided with an overflow tank. Each plating cell 134 accommodates the substrate held by the substrate holder 60 inside, and immerses the substrate in a plating solution. By applying a voltage between the substrate and the anode in the plating cell 134, plating such as copper plating is performed on the surface of the substrate.

  The plating apparatus has a substrate holder transport device 140 which is located on the side of each of these devices and transports the substrate holder 60 along with the substrate between these devices, for example, employing a linear motor system. The substrate holder transport device 140 has a first transporter 142 and a second transporter 144. The first transporter 142 is configured to transport the substrate between the fixing unit 120, the stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130a, and the blow tank 132. The second transporter 144 is configured to transport the substrate between the first cleaning tank 130 a, the second cleaning tank 130 b, the blow tank 132, and the plating tank 10. In another embodiment, the plating apparatus includes only one of the first transporter 142 and the second transporter 144, and one of the transporters includes the fixing unit 120, the stocker 124, the pre-wet tank 126, and the like. The substrate may be transported between the presoak tank 128, the first cleaning tank 130a, the second cleaning tank 130b, the blow tank 132, and the plating tank 10.

  In addition, in the plating apparatus shown in FIG. 1, although the substrate processing apparatus 40 is arrange | positioned independently, it is not restricted to this, for example, the substrate processing apparatus 40 becomes two steps pile up the spin rinse dryer 20. It may be located at This allows the footprint of the plating apparatus to be reduced.

  FIG. 2 is a perspective view of a substrate holder 60 used in the plating apparatus shown in FIG. As shown in FIG. 2, the substrate holder 60 is, for example, a rectangular flat plate-shaped first holding member 65 made of vinyl chloride, and a second holding member attached to the first holding member 65 via a hinge 63 so as to be able to open and close. And 66. A holding surface 68 for holding the substrate is provided substantially at the center of the first holding member 65 of the substrate holder 60. In addition, on the outer side of the holding surface 68 of the first holding member 65, inverted L-shaped clampers 67 having projecting portions that project inward are provided at equal intervals along the circumference of the holding surface 68. .

  At an end portion of the first holding member 65 of the substrate holder 60, a pair of substantially T-shaped hands 69 serving as a support portion when transporting or suspending and supporting the substrate holder 60 are connected. In the stocker 124 shown in FIG. 1, the substrate holder 60 is vertically suspended and supported by hooking the hand 69 on the upper surface of the peripheral wall of the stocker 124. Further, the substrate holder 60 is transported by gripping the hand 69 of the suspended and supported substrate holder 60 with the first transporter 142 or the second transporter 144. Also in the pre-wet tank 126, the pre-soak tank 128, the cleaning tanks 130a and 130b, the blow tank 132, and the plating tank 10, the substrate holder 60 is suspended and supported on their peripheral walls via the hand 69.

  The hand 69 is also provided with an external contact (not shown) for connection to an external power supply unit. The external contact is electrically connected to a plurality of conductors 73 (see FIG. 3) provided on the outer periphery of the holding surface 68 via a plurality of wires.

  The second holding member 66 includes a base 61 fixed to the hinge 63 and a ring-shaped seal holder 62 fixed to the base 61. A pressing ring 64 for rotatably pressing the seal holder 62 against the first holding member 65 is rotatably mounted on the seal holder 62 of the second holding member 66. The pressing ring 64 has a plurality of projecting ridges 64 a protruding outward at the outer peripheral portion thereof. The upper surface of the projection 64a and the lower surface of the inward projection of the clamper 67 have tapered surfaces which are inclined in opposite directions along the rotational direction.

  When holding the substrate, first, with the second holding member 66 opened, the substrate is placed on the holding surface 68 of the first holding member 65, and the second holding member 66 is closed. Subsequently, the pressing ring 64 is rotated clockwise to slide the projection 64 a of the pressing ring 64 into the inside (lower side) of the inward projection of the clamper 67. As a result, the first holding member 65 and the second holding member 66 are mutually tightened and locked via the tapered surfaces respectively provided on the pressing ring 64 and the clamper 67, and the substrate is held. When releasing the holding of the substrate, the press ring 64 is rotated counterclockwise while the first holding member 65 and the second holding member 66 are locked. As a result, the protruding portion 64a of the pressing ring 64 is removed from the inverted L-shaped clamper 67, and the holding of the substrate is released.

  FIG. 3 is a cross-sectional view showing the electrical contacts of the substrate holder 60 shown in FIG. As shown in FIG. 3, the substrate W is placed on the holding surface 68 of the first holding member 65. Between the holding surface 68 and the first holding member 65, a plurality of (one in the figure) electric conductors 73 connected to a plurality of wires extending from the external contacts provided on the hand 69 shown in FIG. It is done. When the substrate W is placed on the holding surface 68 of the first holding member 65, the conductor 73 has a spring characteristic on the surface of the first holding member 65 on the side of the substrate W when the end of the conductor 73 is placed. A plurality of substrates W are arranged outside the circumference of the substrate W so as to be exposed in the above state.

  A seal (a lower surface in the drawing) of the seal holder 62 facing the first holding member 65 is a seal that is brought into pressure contact with the surface outer peripheral portion of the substrate W and the first holding member 65 when the substrate holder 60 holds the substrate W. A member 70 is attached. The seal member 70 has a lip portion 70 a that seals the surface of the substrate W and a lip portion 70 b that seals the surface of the first holding member 65.

  A support 71 is attached to the inside of the seal member 70 between the pair of lip portions 70 a and 70 b. For example, screws or the like are fixed to the support 71 so as to be able to supply power from the conductor 73, and a plurality of electrical contacts 72 are arranged along the circumference of the substrate W, for example. The electrical contact 72 includes an electrical contact end 72 a extending toward the inside of the holding surface 68, and a leg 72 b configured to be able to supply power from the conductor 73.

  When the first holding member 65 and the second holding member 66 shown in FIG. 2 are locked, as shown in FIG. 3, the short lip 70 a on the inner peripheral surface side of the sealing member 70 is formed on the surface of the substrate W, The long lip portion 70 b on the outer peripheral surface side is pressed against the surface of the first holding member 65. Thus, the gap between the lip 70a and the lip 70b is reliably sealed, and the substrate W is held.

The conductor 73 is electrically connected to the leg 72b of the electrical contact 72 in the area sealed by the sealing member 70, ie, the area between the pair of lip portions 70a and 70b of the sealing member 70, and the electrical contact end The portion 72 a contacts the seed layer on the edge portion of the substrate W. Thus, while the substrate W is sealed by the seal member 70 and held by the substrate holder 60, the electrical contacts 72 are
The power can be supplied to the substrate W via

  As described above, a resist pattern is formed in advance on the substrate W on which the seed layer is formed. Before the substrate W is transported to the plating apparatus shown in FIG. 1, UV irradiation and the like are performed to remove resist residues on the substrate surface (ashing treatment) and to hydrophilize the resist surface (discumbing treatment) ) Is done. The substrate W subjected to the ashing process and the discum process is then transported to the plating apparatus and held by the substrate holder 60. Here, on the seed layer on the edge portion of the substrate W where the resist is not applied, an oxide film is formed or an organic substance volatilized from the resist adheres with the lapse of time from the ashing process and the discum process. There is. In addition, the seed layer on the edge portion of the substrate is partially peeled off or thinned by any impact or the like on the substrate between the formation of the seed layer on the substrate surface and the transportation of the substrate to the plating apparatus. There is also a possibility. As shown in FIG. 3, since the electrical contact 72 contacts the edge portion of the substrate W, an oxide film is formed on the seed layer on the edge portion of the substrate W, an organic substance adheres, or the seed layer is partially formed. If it peels off or becomes thin, the contact resistance of the electrical contact 72 of the substrate holder 60 will vary and there is a problem that the uniformity of the plating film thickness will deteriorate.

  So, in this embodiment, the substrate processing apparatus 40 shown in FIG. 1 is provided in a plating apparatus, and the seed layer on the edge part of the board | substrate W is processed appropriately. Specifically, the substrate processing apparatus 40 removes the oxide film formed on the seed layer on the edge portion of the substrate W, detaches the organic matter attached to the seed layer on the edge portion, and the seed layer on the edge portion Perform at least one of electroless plating. In the present specification, the edge portion of the substrate W is an area where the electrical contact 72 can be in contact, or the peripheral edge of the substrate W than the portion where the sealing member 70 contacts when the substrate W is held by the substrate holder 60 It refers to the area on the part side. For example, in the present embodiment, the area on the outer peripheral side of the portion of the sealing member 70 shown in FIG. 3 in contact with the lip portion 70a is within about 5 mm from the outer peripheral edge of the substrate W toward the substrate center. , More preferably about 2 mm.

  FIG. 4 is a partial side sectional view of the substrate processing apparatus 40 according to the present embodiment. In FIG. 4, since the substrate processing apparatus 40 is symmetrical with respect to the center line CL, the right half is not shown. As illustrated, the substrate processing apparatus 40 has a bottom portion 41, a head portion 42, an inner tank 44, an outer tank 45, and a substrate stage 43 (corresponding to an example of a substrate support mechanism). The bottom portion 41 has a bottomed cylindrical shape, and includes a bottom wall portion 41 c and a side wall portion 41 a extending upward from the bottom wall portion 41 c. In the present embodiment, since it is described as processing a circular substrate W, the side wall portion 41 a is formed to be circular in plan view corresponding to the shape of the substrate W. In the case where the rectangular substrate W is processed by the plating apparatus shown in FIG. 1, the side wall 41 a of the bottom portion 41 may be formed in a square in a plan view according to the shape of the substrate W. The bottom portion 41 further includes a seal member 41 b at an end of the side wall portion 41 a. In other words, the substantially ring-shaped seal member 41b is disposed along the end of the side wall portion 41a. The substrate stage 43 is configured to support the substrate W from below with the surface to be plated of the substrate W directed upward, and has a vacuum chuck (not shown) for fixing the supported substrate W to the substrate stage 43. The substrate stage 43 is installed on the bottom wall 41 c so as to be surrounded by the side wall 41 a of the bottom 41 and the seal member 41 b. In addition, the substrate stage 43 can be configured to be vertically movable up and down.

The head portion 42 has a substantially plate-like top plate portion 42 c and a side wall portion 42 a extending downward from the top plate portion 42 c. In the present embodiment, the side wall portion 42 a of the head portion 42 is formed in a circular shape in plan view corresponding to the shape of the substrate W. In the case where the rectangular substrate W is processed by the plating apparatus shown in FIG. 1, the side wall 42 a of the head unit 42 may be formed in a square in a plan view according to the shape of the substrate W. The head portion 42 further has a seal member 42 b at the end of the side wall portion 42 a. In other words, the substantially ring-shaped seal member 42b is disposed along the end of the side wall portion 42a. As illustrated, the head unit 42 and the bottom unit 41 sandwich the substrate W disposed on the substrate stage 43 from above and below to hold the substrate W. At this time, the seal member 42 b of the head portion 42 seals the surface to be plated (corresponding to an example of the first surface) of the substrate W along the edge portion of the substrate W. Thereby, a substantially sealed space is formed between the head portion 42 and the surface to be plated of the substrate W. Further, the seal member 41 b of the bottom portion 41 seals the surface opposite to the surface to be plated of the substrate W (back surface: equivalent to an example of the second surface) along the edge portion of the substrate W. Thereby, a substantially sealed space is formed between the bottom portion 41 and the back surface of the substrate W. As illustrated, the seal member 42b of the head portion 42 and the seal member 41b of the bottom portion 41 are located on the center side of a predetermined distance from the edge of the substrate W, and the edge portion of the substrate W is the head portion 42 and the bottom portion 41 and the substrate It is disposed outside the substantially enclosed space formed by W.

  The substrate processing apparatus 40 further includes an inner tank 44 (corresponding to an example of an edge processing unit and a processing liquid tank) disposed along the outer periphery of the bottom portion 41. The inner tank 44 is configured to store a predetermined treatment liquid therein. As illustrated, in the head portion 42 and the bottom portion 41, the treatment liquid stored in the inner tank 44 does not contact the portion to be plated of the substrate W and the edge portion of the substrate W is stored in the inner tank 44. The substrate W is held so as to be exposed. Therefore, the inner tank 44 is configured to cause the treatment liquid to adhere only to the edge portion of the substrate W, more specifically, to immerse the edge portion of the substrate W in the treatment liquid stored in the inner tank 44. In addition, the to-be-plated part of the board | substrate W is a part by which plating is actually carried out in a to-be-plated surface here, for example, means the part on the board | substrate W in which the resist pattern was formed.

  The substrate processing apparatus 40 has an outer tank 45 disposed along the outer periphery of the inner tank 44. The outer tank 45 is configured to store a predetermined treatment liquid inside, and has a discharge port 48 for discharging the stored treatment liquid. The substrate processing apparatus 40 has a circulation device 51 configured to circulate the processing liquid between the outer tank 45 and the inner tank 44. The circulation device 51 supplies the treatment liquid discharged from the discharge port 48 of the outer tank 45 to the inner tank 44 via the supply port 49 of the inner tank 44. The outer tank 45 is configured to receive the treatment liquid overflowing from the inner tank 44. The circulation device 51 has a pump 51a for transporting the treatment liquid, a thermostatic unit 51b for adjusting the temperature of the treatment liquid, and a filter 51c for removing foreign matter in the treatment liquid. The circulation device 51 circulates the treatment liquid, thereby removing foreign substances in the treatment liquid and maintaining a clean state. The thermostatic unit 51b can be omitted except when the processing solution is a plating solution. The inner tank 44 has a discharge port 50 for discharging the treatment liquid after use.

  The substrate processing apparatus 40 has a blow nozzle 47. A plurality of blow nozzles 47 are provided along the circumferential direction of the edge portion of the substrate W. Thus, after the edge portion of the substrate W is treated with the processing liquid, gas can be sprayed from the blow nozzle 47 to the edge portion of the substrate W to dry the edge portion. The plurality of blow nozzles 47 are preferably provided at equal intervals along the circumferential direction of the substrate W in order to uniformly dry the edge portion of the substrate W. When the substrate W to be processed is circular as in the present embodiment, the head portion 42 and the bottom portion 41 may be rotated around the center line CL. In this case, a single blow nozzle 47 can be used to dry the edge uniformly.

  The substrate processing apparatus 40 according to the present embodiment includes, as a processing liquid, an acidic processing liquid that removes an oxide film present at the edge of the substrate W, an alkaline processing liquid that removes an organic substance present at the edge of the substrate W, And either of the plating solution for performing an electroless-plating process to the edge part of the board | substrate W is employable.

When the treatment liquid is an acidic treatment liquid, the edge portion of the substrate W is immersed in the treatment liquid, whereby the oxide film formed on the edge portion of the substrate W is dissolved and removed. As the acid treatment liquid, for example, an acid such as dilute sulfuric acid or citric acid which is less likely to damage the seed layer on the substrate W may be employed. When the processing liquid is an alkaline processing liquid, the organic substance attached to the edge part of the substrate W is removed by immersing the edge part of the substrate W in the processing liquid. As an alkaline processing liquid, alkaline solutions, such as sodium hydroxide and potassium hydroxide, may be adopted, for example. When the treatment solution is a plating solution, a conventionally known plating solution used for electroless plating can be employed. When the seed layer on the edge portion of the substrate W is partially peeled or thinned, for example, the seed layer on the edge portion is removed by etching with sulfuric acid / hydrogen peroxide or the like in advance, and then electroless plating is performed. The seed layer can be replated. Alternatively, when the seed layer on the edge portion is partially exfoliated (when there is a region that is not substantially conductive), the exfoliated portion of the seed layer can be repaired by electroless plating.

  Next, a process of processing the edge portion of the substrate W by the substrate processing apparatus 40 shown in FIG. 4 will be described. FIG. 5 is a flow chart showing the processing process of the edge portion in the substrate processing apparatus 40. As shown in FIG. As shown in FIG. 5, first, with the head portion 42 removed from the substrate processing apparatus 40, the substrate stage 43 is raised to a position higher than the seal member 41 b of the bottom portion 41. The substrate W is disposed on the substrate stage 43, and is vacuum chucked by the substrate stage 43 (step S501). Thus, the substrate W is fixed on the substrate stage 43. Subsequently, the substrate stage 43 is lowered, and the back surface of the substrate W is in contact with the seal member 41b of the bottom portion 41 (step S502). Thereby, a substantially sealed space is formed between the bottom portion 41 and the back surface of the substrate W.

  The head portion 42 descends, and the upper surface (surface to be plated) of the substrate W contacts the seal member 42 b of the head portion 42 (step S 503). Thereby, a substantially sealed space is formed between the head portion 42 and the surface to be plated of the substrate W. At this time, as shown in FIG. 4, the plated portion of the substrate W is covered by the head portion 42, while the edge portion of the substrate W is exposed to the inner tank 44. Subsequently, the treatment liquid is supplied to the inner tank 44 (step S504). Depending on the processing purpose of the edge portion of the substrate W, any of an acid treatment solution, an alkaline treatment solution, or an electroless plating solution is used as the treatment solution. The treatment liquid overflows from the inner tank 44 and flows into the outer tank 45. The edge portion of the substrate W is immersed in the processing solution while the processing solution is circulated between the inner tank 44 and the outer tank 45.

  The edge portion of the substrate W is immersed in the processing liquid for a predetermined time, and after the processing is completed, the processing liquid is discharged from the inner tank 44 (step S505). Subsequently, pure water is supplied to the empty inner tank 44 (step S506), and the processing liquid attached to the edge portion of the substrate W is washed with pure water. The pure water overflows from the inner tank 44 and flows into the outer tank 45, and is circulated between the inner tank 44 and the outer tank 45 by the circulation device 51. In addition, it is preferable to supply the pure water used for this washing | cleaning to the inner tank 44 through the path | route different from a process liquid. Moreover, it is preferable to discharge the pure water overflowed from the inner tank 44 to the outer tank 45 from the outer tank 45 through a drainage line (not shown) without circulating between the inner tank 44 and the outer tank 45. Thereby, normal pure water can be always supplied to the inner tank 44, and the cleaning effect can be improved. After the cleaning of the edge portion of the substrate W is completed, the pure water is discharged from the inner tank 44 (step S507). Subsequently, the edge portion of the substrate W is dried by the blow nozzle 47 (step S508).

  When the edge portion of the substrate W is dried, the head portion 42 is raised to separate the seal member 42b of the head portion 42 from the surface to be plated of the substrate W (step S509). Subsequently, the substrate stage 43 is raised, and the substrate W is peeled off from the seal member 41b of the bottom portion 41 (step S510). The vacuum chuck of the substrate stage 43 is released, and the substrate W is taken out of the substrate processing apparatus 40 by the transfer arm (not shown) (step S511).

As described above, according to the substrate processing apparatus 40 of the present embodiment, the to-be-plated surface of the substrate W is sealed by the head portion 42, and the treatment liquid is prevented from adhering to the to-be-plated portion of the substrate W The processing liquid can be deposited only on the edge portion of the substrate W. For this reason, an appropriate process can be performed to an edge part, without giving the influence of a process liquid with respect to the to-be-plated part of the board | substrate W. FIG. Further, in the present embodiment, since the edge portion of the substrate W is immersed in the processing liquid, the processing liquid can be uniformly attached to the edge portion of the substrate W, and processing unevenness can be reduced.

  Further, in the present embodiment, since the substrate processing apparatus 40 has the blow nozzle 47, the edge portion of the substrate W can be sufficiently dried. As a result, the portion of the substrate W in contact with the electrical contacts of the substrate holder 60 shown in FIG. 2 becomes dry, and between the electrical contacts when the substrate W processed by the substrate processing apparatus 40 is held by the substrate holder 60. It is possible to prevent a short circuit. Further, in the present embodiment, the substrate processing apparatus 40 has a substrate stage 43. Thereby, when the substrate W is held by the head portion 42 and the bottom portion 41, the central portion of the substrate W can be supported from the lower side, and the substrate W can be prevented from being bent.

  In the substrate processing apparatus 40 shown in FIG. 4 and other embodiments to be described later, the edge portion of the substrate W is immersed in the processing liquid, but the present invention is not limited thereto. The processing solution may be sprayed directly on the edge portion of the substrate W. Further, in the substrate processing apparatus 40 shown in FIG. 5 and other embodiments described later, the head portion 42 has a top plate portion 42 c and is configured to cover the plated portion of the substrate W. It is not limited to. For example, the head portion 42 may not be provided with the top plate portion 42c, and may be configured in a substantially cylindrical shape as a whole. In this case, the portion to be plated of the substrate W is not sealed, but the sealing member 42b and the side wall portion 42a of the head portion 42 can prevent the processing liquid from contacting the portion to be plated.

  Next, a substrate processing apparatus 40 according to another embodiment used for the plating apparatus according to the present embodiment will be described. FIG. 6 is a partial side sectional view of a substrate processing apparatus 40 according to another embodiment. The substrate processing apparatus 40 shown in FIG. 6 differs from the substrate processing apparatus 40 shown in FIG. 4 in that it has an air float mechanism. Specifically, the substrate processing apparatus 40 shown in FIG. 6 is an air float mechanism 52 (gas blowing mechanism) configured to spray a gas such as air from the lower side to the upper side of the substrate W instead of the substrate stage 43. Corresponding to one example). The substrate processing apparatus 40 according to this embodiment can process, for example, an edge portion of the substrate W whose both surfaces are surfaces to be plated. When the air float mechanism 52 blows a gas on the back surface (lower surface) of the substrate W, the substrate W held by the head portion 42 and the bottom portion 41 can be supported in a non-contact state. When the substrate W is a flexible substrate W, the air float mechanism 52 sprays the gas on the back surface of the substrate W, whereby the substrate W can be prevented from bending. As a result, the substrate W can be prevented from being displaced with respect to the seal member 41 b and the seal member 42 b due to the bending of the substrate W.

  Further, similarly to the substrate processing apparatus 40 shown in FIG. 4, the bottom portion 41 of the substrate processing apparatus 40 shown in FIG. 6 has a seal member 41 b. Thus, the surface (back surface) opposite to the surface to be plated of the substrate W is sealed, and the processing liquid can be attached only to the edge portion of the substrate W while preventing the processing liquid from adhering to the back surface. Therefore, even if the substrate W is a substrate W for double-sided plating as in the embodiment shown in FIG. 6, the treatment liquid can be prevented from adhering to the portions to be plated on both surfaces of the substrate W.

FIG. 7 is a partial side sectional view of a substrate processing apparatus 40 according to another embodiment. The substrate processing apparatus 40 shown in FIG. 7 differs from the substrate processing apparatus 40 shown in FIG. 4 in that it has an ultraviolet irradiation device. Specifically, the substrate processing apparatus 40 shown in FIG. 7 has an ultraviolet irradiation device 53 configured to irradiate ultraviolet light to the portion to be plated of the substrate W in a state of being sealed by the head portion 42. The ultraviolet irradiation device 53 includes an ultraviolet lamp such as a low pressure mercury lamp capable of irradiating ultraviolet light, and is configured to irradiate the entire surface to be plated of the substrate W with ultraviolet light. When the ultraviolet irradiation device 53 is a low pressure mercury lamp, the main wavelengths of the irradiated ultraviolet light are 254 nm and 185 nm. Further, the ultraviolet lamp may have any shape capable of irradiating the entire surface to be plated of the substrate W, such as a straight tube type, a U type, an M type, and a rectangular type. As shown in FIG. 7, the ultraviolet irradiation device 53 has a head portion 42 in order to irradiate the surface to be plated of the substrate W with ultraviolet light as uniformly as possible.
A plurality of ultraviolet lamps may be disposed on the lower surface of the top plate portion 42c.

  A resist film is generally formed on the portion to be plated of the substrate W. A predetermined time has elapsed since the substrate W is transported to the plating apparatus after the resist film has been subjected to hydrophilization treatment (discome treatment). Therefore, an organic substance may be attached to the resist surface as time passes, and the resist surface may gradually change from hydrophilic to hydrophobic. Therefore, the substrate processing apparatus 40 irradiates the portion to be plated of the substrate W with ultraviolet light by the ultraviolet light irradiation device 53. Thus, the surface to be plated is cleaned and reformed. At this time, active oxygen is generated by the action of ultraviolet light from a small amount of ozone present in the atmosphere. The active oxygen decomposes and changes the organic substance on the surface of the substrate W into a volatile substance. Also, the action of the active oxygen and the ultraviolet light breaks the chemical bond on the resist surface, and the active oxygen bonds to the molecules on the resist surface. Thereby, a highly hydrophilic functional group is provided on the resist surface. That is, by irradiating the surface of the substrate W with ultraviolet light, hydrophobic substances on the surface of the substrate W are removed and cleaned, and the surface is modified to be hydrophilic.

  The irradiation time of the ultraviolet light to the surface of the substrate W in the atmospheric atmosphere can be appropriately determined so that the resist does not ash depending on the elapsed time after the substrate W is subjected to the ashing process or the disk process. In addition, in this embodiment, although irradiation of ultraviolet rays is performed in air | atmosphere, it can also be performed in ozone atmosphere or oxygen atmosphere, for example. Here, the ozone atmosphere means an atmosphere in which ozone is positively introduced, and the oxygen atmosphere means an atmosphere in which oxygen is actively introduced. However, in an ozone atmosphere and an oxygen atmosphere, the amount of active oxygen generated by the action of ultraviolet light is large, and thus the resist itself may be decomposed (ashed). Therefore, it is desirable that the irradiation time of the ultraviolet light on the surface of the substrate W in the ozone atmosphere and the oxygen atmosphere be shorter than the irradiation time of the ultraviolet light in the air atmosphere. Also, in order to prevent the resist itself from incineration, the substrate W is irradiated with ultraviolet light in a state where the space defined by the head portion 42 and the substrate W is in the atmosphere or in an atmosphere filled with nitrogen described later. Is desirable.

  FIG. 8 is a partial side sectional view of a substrate processing apparatus 40 according to another embodiment. The substrate processing apparatus 40 shown in FIG. 8 differs from the substrate processing apparatus 40 shown in FIG. 4 in that it has a plasma irradiation apparatus. Specifically, the substrate processing apparatus 40 shown in FIG. 8 has a plasma irradiation apparatus 54 configured to irradiate plasma to the portion to be plated of the substrate W in a state of being sealed by the head unit 42. In the present embodiment, a plurality of plasma irradiation devices 54 are provided on the lower surface side of the top plate portion 42c of the head portion 42, and are configured to irradiate the surface to be plated of the substrate W with plasma as uniform as possible. Not only this but the plasma irradiation apparatus 54 may be comprised so that the to-be-plated surface of the board | substrate W may be scanned.

As described above, a resist film is generally formed on the to-be-plated portion of the substrate W, and the resist surface is gradually rendered hydrophilic from the hydrophilicity with the passage of time from the hydrophilization treatment (discam treatment) Can change to Therefore, the substrate processing apparatus 40 irradiates the to-be-plated portion of the substrate W with O ₂ plasma by the plasma irradiation apparatus 54 to perform a hydrophilization treatment to improve the wettability of the to-be-plated surface.

  According to the substrate processing apparatus 40 shown in FIG. 7 and FIG. 8, it is possible to perform the hydrophilization treatment of the portion to be plated of the substrate W while processing the edge portion of the substrate W. In this case, there is no need to subject the portion to be plated of the substrate W to the hydrophilic treatment in the pre-wet tank 126 shown in FIG. As a result, since the pre-wet tank 126 can be excluded from the plating apparatus, the footprint of the plating apparatus can be reduced and the throughput of the entire plating process can be improved. In addition, in FIG.7 and FIG.8, although the ultraviolet irradiation apparatus 53 and the plasma irradiation apparatus 54 shall be provided in the head part 42, respectively, it can arrange | position not only to this but arbitrary places. For example, the substantially cylindrical head part 42 which is not provided with the top plate part 42c can be prepared, and the ultraviolet irradiation device 53 or the plasma irradiation device 54 can be positioned above the to-be-plated part of the substrate W.

  FIG. 9 is a partial side sectional view of a substrate processing apparatus 40 according to another embodiment. The substrate processing apparatus 40 shown in FIG. 9 differs from the substrate processing apparatus shown in FIG. 5 in that the bottom part 41 is not provided. Further, the substrate processing apparatus shown in FIG. 9 has a substrate support mechanism 55 provided with a plurality of (for example, three) arms 55a for supporting the edge portion of the substrate W from below. Unlike the bottom portion 41, the substrate support mechanism 55 does not have a function of sealing the back surface of the substrate W. Therefore, as shown in FIG. 9, the processing liquid in the inner tank 44 comes in contact with the back surface side of the substrate W. On the other hand, the surface to be plated of the substrate W is sealed along the edge portion of the substrate W by the seal member 42 b of the head portion 42 as in the substrate processing apparatus 40 shown in FIG. 4. Thereby, a substantially sealed space is formed between the head portion 42 and the surface to be plated of the substrate W.

  When the substrate W is plated on only one side, no substantial problem occurs even when the processing liquid comes in contact with the non-plated side. Therefore, as in the substrate processing apparatus 40 shown in FIG. 9, by allowing the processing liquid to contact the back surface side of the substrate W, the bottom portion 41 can be omitted, and the configuration of the substrate processing apparatus 40 is simplified. Can be Although the substrate support mechanism 55 is employed in the substrate processing apparatus 40 shown in FIG. 9, the substrate stage 43 shown in FIGS. 5, 7 and 8 may be employed instead. Conversely, in place of the substrate stage 43, the substrate support mechanism 55 may be employed in the substrate processing apparatus 40 shown in FIGS. Further, the substrate processing apparatus 40 shown in FIG. 9 may be provided with the circulation device 51 and the outer tank 45 shown in FIG.

  Next, the position on the substrate W with which the seal member 42 b of the head portion 42 or the seal member 42 b of the bottom portion 41 contacts will be described in detail. 10A and 10B are enlarged partial sectional views showing the contact position of the substrate W and the seal member 42b. As shown in FIGS. 10A and 10B, the substrate W has a seed layer S1 and a resist layer R1 on its surface. A resist layer R1 is formed on the substrate W so that a part of the seed layer S1 is exposed, and the electrical contact end 72a shown in FIG. 3 is in contact with the exposed part of the seed layer S1.

  In the substrate processing apparatus 40 shown in FIGS. 4 to 9, the seal member 42b of the head unit 42 is configured to contact the resist layer R1 as shown in FIG. 10A or the seed layer S1 as shown in FIG. 10B. Be done. As shown in FIG. 10A, when the seal member 42b contacts the resist layer R1, the treatment liquid can be brought into contact with the entire exposed portion of the seed layer S1, while the treatment liquid is also present in part of the resist layer R1. It can touch. As shown in FIG. 10B, when the seal member 42b contacts the seed layer S1, the exposed area of the seed layer S1 is smaller than in the case of FIG. 10A, but the treatment liquid is prevented from contacting the resist layer R1. Be done.

  When the processing liquid is an alkaline processing liquid, when the processing liquid comes in contact with the resist layer R1, the resist layer R1 may be dissolved. Therefore, in this case, as shown in FIG. 10B, it is preferable that the sealing member 42b be in contact with the seed layer S1 so that the processing liquid does not contact the resist layer R1. As shown in FIG. 10A, the sealing member 42b may be brought into contact with the resist layer R1. In this case, management of the time for which the processing liquid is in contact with the edge portion of the substrate W is controlled so that the resist layer R1 is not dissolved. It is preferable to do it properly.

  When the treatment solution is an acidic treatment solution or an electroless plating solution, even if the treatment solution comes in contact with the resist layer R1, there is no substantial adverse effect on the resist layer R1. Therefore, in this case, as shown in FIG. 10A, it is preferable that the seal member 42b be in contact with the resist layer R1 to make the exposed area of the seed layer S1 relatively large.

10A and 10B, the substrate W has the seed layer S1 and the resist layer R1 only on one side, and the seal member 41b of the bottom portion 41 is not shown. In this case, the position at which the seal member 42 b of the bottom portion 41 contacts the substrate W is arbitrary. On the other hand, when both surfaces of the substrate W are to be plated, the position of the seal member 42b of the bottom portion 41 can be determined in the same manner as the position of the seal member 41b of the head portion 42. That is, when the treatment liquid is an alkaline treatment liquid, the seal member 42b is preferably in contact with the seed layer S1, and when the treatment liquid is an acid treatment liquid or an electroless plating solution, the seal member 42b is in contact with the resist layer Is preferred.

  As mentioned above, although embodiment of this invention was described, embodiment of the invention mentioned above is for making an understanding of this invention easy, and does not limit this invention. The present invention can be modified and improved without departing from the gist thereof, and the present invention naturally includes the equivalents thereof. In addition, any combination or omission of each component described in the claims and the specification is possible in a range in which at least a part of the above-mentioned problems can be solved or in a range where at least a part of the effect is exhibited. is there.

The following describes some of the forms disclosed herein.
According to a first aspect, there is provided a substrate processing apparatus for processing an edge portion of a substrate. In this substrate processing apparatus, an edge processing unit configured to cause a processing solution to adhere to the edge portion of the substrate, and the processing solution does not contact the portion to be plated of the substrate, and the edge portion of the substrate performs the processing And a head portion for sealing the first surface of the substrate along the edge portion of the substrate so as to be exposed to the liquid.

  According to the first aspect, the head portion seals the first surface of the substrate, and the treatment liquid can be attached only to the edge portion of the substrate while preventing the treatment liquid from adhering to the plated portion of the substrate. . For this reason, an appropriate process can be performed to an edge part, without giving the influence of a process liquid with respect to the to-be-plated part of a board | substrate.

  According to a second aspect, in the substrate processing apparatus according to the first aspect, the edge processing unit has a processing liquid tank configured to store the processing liquid, and the edge part of the substrate is the processing liquid tank. It is comprised so that it may be immersed in the said process liquid stored by these.

  According to the second aspect, since the edge portion of the substrate is immersed in the processing liquid, the processing liquid can be uniformly attached to the edge portion of the substrate, and processing unevenness can be reduced.

  According to the third aspect, the substrate processing apparatus of the first or second aspect further includes a drying device configured to spray a gas onto the edge portion of the substrate to dry the edge portion.

  According to the third aspect, the edge portion of the substrate can be sufficiently dried. Thus, the portion of the substrate in contact with the electrical contacts of the substrate holder becomes dry, and a short circuit when the substrate processed by the substrate processing apparatus is held by the substrate holder can be prevented.

  According to the fourth aspect, in the substrate processing apparatus according to any one of the first to third aspects, the processing liquid is not in contact with the portion to be plated of the substrate and the edge portion of the substrate is exposed to the processing liquid. And a seal configured to seal a second surface opposite to the first surface along an edge of the substrate.

  According to the fourth aspect, the second surface of the substrate is sealed by the seal portion. Thus, the surface (back surface) opposite to the surface to be plated of the substrate is sealed, and the processing liquid can be attached only to the edge portion of the substrate while preventing the processing liquid from adhering to the back surface. Therefore, even if the substrate is a double-sided plating substrate, it is possible to prevent the treatment liquid from adhering to the portions to be plated on both sides of the substrate.

  According to the fifth aspect, in the substrate processing apparatus of the fourth aspect, the substrate processing apparatus further comprises a substrate support mechanism for supporting the substrate, and the seal portion is arranged to surround the substrate support mechanism.

  According to the fifth aspect, when the substrate is held by the head portion and the sealing portion, the substrate can be supported.

  According to the sixth aspect, in the substrate processing apparatus of the fourth aspect, the gas processing mechanism is configured to spray gas upward on the lower surface of the substrate.

  According to the sixth aspect, the substrate held by the head portion and the seal portion can be supported in a non-contact manner. Further, in the case where the substrate is a flexible substrate, the substrate can be prevented from bending by spraying a gas on the lower surface of the substrate. As a result, the substrate can be prevented from being displaced with respect to the head portion and the seal portion due to the bending of the substrate.

  According to the seventh aspect, in the substrate processing apparatus according to any one of the first to sixth aspects, the plating target portion of the substrate in a state sealed by the head portion is irradiated with ultraviolet light to the plating target portion. It has an ultraviolet irradiation device configured to perform a hydrophilization treatment.

  According to the seventh aspect, it is possible to perform the hydrophilization treatment of the to-be-plated portion of the substrate while processing the edge portion of the substrate. In this case, there is no need to subject the plated portion of the substrate to a hydrophilic treatment in a pre-wet tank. As a result, since the pre-wet tank can be excluded from the plating apparatus, the footprint of the plating apparatus can be reduced and the throughput of the entire plating process can be improved.

  According to an eighth aspect, in the substrate processing apparatus according to any one of the first to seventh aspects, plasma is irradiated to the to-be-plated portion of the substrate in a state of being sealed by the head portion. It has a plasma processing apparatus configured to perform a hydrophilization treatment.

  According to the eighth aspect, it is possible to perform the hydrophilization treatment of the to-be-plated portion of the substrate while processing the edge portion of the substrate. In this case, there is no need to subject the plated portion of the substrate to a hydrophilic treatment in a pre-wet tank. As a result, since the pre-wet bath can be excluded from the plating apparatus, the footprint of the plating apparatus can be reduced and the throughput of the entire plating process can be improved.

  According to a ninth aspect, in the substrate processing apparatus according to any one of the first to eighth aspects, the processing liquid is an acid processing liquid for removing an oxide film present at the edge portion of the substrate; It is either an alkaline processing solution for removing an organic substance present in the edge portion, or a plating solution for performing an electroless plating process on the edge portion of the substrate.

  According to the ninth aspect, the oxide film or the oxide film present in the edge portion of the substrate can be removed, or the electroless plating process can be performed on the edge portion of the substrate.

  According to a tenth aspect, a plating apparatus is provided. This plating apparatus is a state in which the substrate and the anode held by the substrate processing apparatus having any one of the first to ninth embodiments and the substrate holder having the contacts in contact with the edge portion of the substrate are immersed in the plating solution. And a plating bath for plating by applying a voltage between the substrate and the anode.

According to the tenth aspect, the plating process can be performed on the substrate whose edge portion has been properly processed by the substrate processing apparatus. At this time, since the edge portion is treated with the processing solution, when the substrate is held by the substrate holder, the edge portion and the contact point make good contact, and the deterioration of the uniformity of the plating film thickness formed on the substrate is prevented. Can.

  According to an eleventh aspect, there is provided a substrate processing method for processing an edge portion of a substrate. In this substrate processing method, the first surface of the substrate is taken along the edge of the substrate so that the processing liquid does not contact the to-be-plated part of the substrate and the edge of the substrate is exposed to the processing liquid. A first sealing step of sealing and an edge portion processing step of adhering a processing liquid to the edge portion of the substrate.

  According to the eleventh aspect, the first surface of the substrate is sealed, and the treatment liquid can be adhered only to the edge portion of the substrate while preventing the treatment liquid from adhering to the portion to be plated of the substrate. For this reason, an appropriate process can be performed to an edge part, without giving the influence of a process liquid with respect to the to-be-plated part of a board | substrate.

  According to a twelfth aspect, in the substrate processing method according to the eleventh aspect, the edge portion processing step includes the step of immersing the edge portion of the substrate in the processing liquid stored in a processing liquid tank.

  According to the twelfth aspect, since the edge portion of the substrate is immersed in the processing liquid, the processing liquid can be uniformly attached to the edge portion of the substrate, and processing unevenness can be reduced.

  According to a thirteenth aspect, in the substrate processing method described in the eleventh or twelfth aspect, the step of spraying a gas onto the edge portion of the substrate processed in the edge portion processing step to dry the edge portion Have.

  According to the thirteenth aspect, the edge portion of the substrate can be sufficiently dried. As a result, the portion of the substrate in contact with the electrical contacts of the substrate holder becomes dry, and a short circuit when the processed substrate is held by the substrate holder can be prevented.

  According to a fourteenth aspect, in the substrate processing method according to any of the eleventh to thirteenth aspects, the processing liquid is not in contact with the portion to be plated of the substrate and the edge portion of the substrate is exposed to the processing liquid. And a second sealing step of sealing the second surface opposite to the first surface along the edge portion of the substrate.

  According to the fourteenth aspect, the second surface of the substrate is sealed. Thus, the surface (back surface) opposite to the surface to be plated of the substrate is sealed, and the processing liquid can be attached only to the edge portion of the substrate while preventing the processing liquid from adhering to the back surface. Therefore, even if the substrate is a double-sided plating substrate, it is possible to prevent the treatment liquid from adhering to the portions to be plated on both sides of the substrate.

  According to a fifteenth aspect, in the substrate processing method according to the fourteenth aspect, the method further includes the step of supporting the substrate by the substrate support mechanism, and in the second sealing step, the processing liquid is not in contact with the substrate support mechanism. Sealing the second surface.

  According to the fifteenth aspect, the substrate can be supported, and bending of the substrate can be prevented.

  According to a sixteenth aspect, in the substrate processing method according to the fourteenth aspect, the step of blowing gas upward on the lower surface of the substrate is included.

According to the sixteenth aspect, the substrate can be supported in a non-contact state. Further, in the case where the substrate is a flexible substrate, the substrate can be prevented from bending by spraying a gas on the lower surface of the substrate.

  According to a seventeenth aspect, in the substrate processing method according to any one of the eleventh to sixteenth aspects, the plating target portion of the substrate in a sealed state in the first sealing step is irradiated with ultraviolet light to be plated It has the process of hydrophilizing the part.

  According to the seventeenth aspect, it is possible to perform the hydrophilization treatment of the to-be-plated portion of the substrate while processing the edge portion of the substrate. In this case, there is no need to subject the plated portion of the substrate to a hydrophilic treatment in a pre-wet tank. As a result, since the pre-wet tank can be excluded from the plating apparatus, the footprint of the plating apparatus can be reduced and the throughput of the entire plating process can be improved.

  According to an eighteenth aspect, in the substrate processing method according to any one of the eleventh to seventeenth aspects, plasma is irradiated to the to-be-plated portion of the substrate in a sealed state in the first sealing step, It has the process of hydrophilizing the part.

  According to the eighteenth aspect, it is possible to perform the hydrophilization treatment of the to-be-plated portion of the substrate while processing the edge portion of the substrate. In this case, there is no need to subject the plated portion of the substrate to a hydrophilic treatment in a pre-wet tank. As a result, since the pre-wet bath can be excluded from the plating apparatus, the footprint of the plating apparatus can be reduced and the throughput of the entire plating process can be improved.

  According to a nineteenth aspect, in the substrate processing method according to any one of the eleventh to eighteenth aspects, the processing liquid is an acidic processing liquid for removing an oxide film present at the edge portion of the substrate; It is either an alkaline processing solution for removing an organic substance present in the edge portion, or a plating solution for performing an electroless plating process on the edge portion of the substrate.

  According to the nineteenth aspect, the oxide film or the oxide film present in the edge portion of the substrate can be removed, or the electroless plating process can be performed on the edge portion of the substrate.

DESCRIPTION OF SYMBOLS 10 ... Plating tank 40 ... Substrate processing apparatus 41 ... Bottom part 41b ... Seal member 42 ... Head part 43 ... Substrate stage 44 ... Inner tank 47 ... Blow nozzle 52 ... Air float mechanism 53 ... Ultraviolet irradiation device 54 ... Plasma irradiation device 55 ... Substrate support mechanism W ... substrate

Claims (19)

A substrate processing apparatus for processing an edge portion of a substrate, the substrate processing apparatus comprising:
An edge processing unit configured to cause a processing liquid to adhere to an edge portion of the substrate;
A head portion that seals the first surface of the substrate along the edge portion of the substrate such that the processing solution does not contact the plated portion of the substrate and the edge portion of the substrate is exposed to the processing solution; And a substrate processing apparatus. In the substrate processing apparatus according to claim 1,
The edge processing unit includes a processing liquid tank configured to store the processing liquid, and is configured to immerse an edge portion of the substrate in the processing liquid stored in the processing liquid tank. Substrate processing equipment. The substrate processing apparatus according to claim 1 or 2
A substrate processing apparatus, comprising: a drying device configured to spray a gas onto the edge portion of the substrate to dry the edge portion. The substrate processing apparatus according to any one of claims 1 to 3.
The second surface opposite to the first surface is along the edge of the substrate so that the treatment liquid does not contact the portion to be plated of the substrate and the edge of the substrate is exposed to the treatment liquid. A substrate processing apparatus having a seal portion configured to seal. In the substrate processing apparatus according to claim 4,
A substrate support mechanism for supporting the substrate;
The said seal | sticker part is a substrate processing apparatus arrange | positioned so that the said board | substrate support mechanism may be surrounded. In the substrate processing apparatus according to claim 4,
A substrate processing apparatus, comprising: a gas blowing mechanism configured to blow a gas upward to a lower surface of the substrate. The substrate processing apparatus according to any one of claims 1 to 6.
A substrate processing apparatus, comprising: an ultraviolet irradiation device configured to irradiate the ultraviolet light to the to-be-plated portion of the substrate in a state of being sealed by the head portion and to hydrophilize the to-be-plated portion. The substrate processing apparatus according to any one of claims 1 to 7.
A substrate processing apparatus, comprising: a plasma processing apparatus configured to irradiate the plasma to the portion to be plated of the substrate in a state sealed by the head portion to hydrophilize the portion to be plated. The substrate processing apparatus according to any one of claims 1 to 8.
The treatment liquid is
An acidic treatment liquid for removing an oxide film present at the edge portion of the substrate,
A substrate processing apparatus comprising: an alkaline processing solution for removing an organic substance present in the edge portion of the substrate; and a plating solution for performing an electroless plating process on the edge portion of the substrate. A substrate processing apparatus according to any one of claims 1 to 9,
A plating tank for applying a voltage between the substrate and the anode to perform plating while the substrate and the anode held by the substrate holder having contacts making contact with the edge portion of the substrate are immersed in a plating solution And a plating apparatus. A substrate processing method for processing an edge portion of a substrate, the substrate processing method comprising:
A first sealing step of sealing the first surface of the substrate along the edge portion of the substrate such that the treatment liquid does not contact the plated portion of the substrate and the edge portion of the substrate is exposed to the treatment liquid When,
And D. an edge portion processing step of adhering a processing liquid to an edge portion of the substrate. In the substrate processing method according to claim 11,
The edge processing step includes the step of immersing the edge portion of the substrate in the processing liquid stored in a processing liquid tank. In the substrate processing method according to claim 11 or 12,
A substrate processing method comprising the step of blowing a gas onto the edge portion of the substrate processed in the edge portion processing step to dry the edge portion. In the substrate processing method according to any one of claims 11 to 13,
The second surface opposite to the first surface is along the edge of the substrate so that the treatment liquid does not contact the portion to be plated of the substrate and the edge of the substrate is exposed to the treatment liquid. A substrate processing method, comprising: a second sealing step of sealing. In the substrate processing method according to claim 14,
Supporting the substrate with a substrate support mechanism,
The second sealing step includes the step of sealing the second surface such that the processing liquid does not contact the substrate support mechanism. In the substrate processing method according to claim 14,
A substrate processing method comprising the step of blowing a gas upward to the lower surface of the substrate. In the substrate processing method according to any one of claims 11 to 16,
A substrate processing method comprising a step of irradiating the plated portion of the substrate in a sealed state in the first sealing step with ultraviolet light to hydrophilize the plated portion. In the substrate processing method according to any one of claims 11 to 17,
A substrate processing method, comprising: applying a plasma to the portion to be plated of the substrate in a sealed state in the first sealing step to hydrophilize the portion to be plated. The substrate processing method according to any one of claims 11 to 18,
The treatment liquid is
An acidic treatment liquid for removing an oxide film present at the edge portion of the substrate,
A substrate processing method comprising: an alkaline processing solution for removing an organic substance present in the edge portion of the substrate; and a plating solution for performing an electroless plating process on the edge portion of the substrate.

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