JP2019110204A - Semiconductor light emitting device, general purpose mounting substrate, and method of manufacturing semiconductor light emitting device using the same - Google Patents

Semiconductor light emitting device, general purpose mounting substrate, and method of manufacturing semiconductor light emitting device using the same Download PDF

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JP2019110204A
JP2019110204A JP2017242066A JP2017242066A JP2019110204A JP 2019110204 A JP2019110204 A JP 2019110204A JP 2017242066 A JP2017242066 A JP 2017242066A JP 2017242066 A JP2017242066 A JP 2017242066A JP 2019110204 A JP2019110204 A JP 2019110204A
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light emitting
semiconductor light
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mounting
emitting device
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JP7064325B2 (en
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俊広 及川
Toshihiro Oikawa
俊広 及川
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

To provide a general-purpose mounting substrate that can correspond to LED chips of different sizes and has no problem of LED chip misalignment or excessive bonding material spreading.SOLUTION: The general-purpose mounting substrate is provided with a mounting pad 13 formed for joining any of a plurality of semiconductor light emitting elements having different sizes. The mounting pad 13 has a first area 131 and a second area 132 located inside the first area 131. A step is formed between the first area 131 and the second area 132. Since the area is determined by the step, a displacement of an LED chip is prevented. Furthermore, an excess bonding material does not spread to a substrate side.SELECTED DRAWING: Figure 2

Description

本発明は、発光ダイオード(LED:Light Emitting Diode)等の半導体発光素子を、素子実装用の基板(以下、実装基板という)に実装した半導体発光装置及びその製造方法に関する。   The present invention relates to a semiconductor light emitting device in which a semiconductor light emitting element such as a light emitting diode (LED) is mounted on a device mounting substrate (hereinafter referred to as a mounting substrate) and a method of manufacturing the same.

半導体発光装置として、絶縁基板の表面に形成した金属膜からなる素子実装用のパッド(実装パッド)に半導体発光素子(以下、LEDチップともいう)を接合材で接合し、LEDチップ表面の電極をワイヤーボンディングした後、樹脂モールドによりパッケージ化した発光装置が広く用いられている。このタイプの発光装置では、LEDチップが発生する熱を効果的に基板側に拡散するために、LEDチップが接合材により全面で実装パッドに接合されることが好ましいが、LEDチップと実装パッドとの間に供給される接合材の量が多いと、リフロー時に溶融した接合材がLEDチップの周辺に広がったり、回り込んだりするという問題がある。この問題を解消するため、例えば実装パッドのLEDチップが接合される部分の外側に突出部を設けることや(特許文献1)、溝を設けることが提案されている(特許文献2)。   As a semiconductor light emitting device, a semiconductor light emitting element (hereinafter also referred to as an LED chip) is bonded to a pad for mounting an element (mounting pad) made of a metal film formed on the surface of an insulating substrate with a bonding material. A light emitting device packaged by resin molding after wire bonding is widely used. In this type of light emitting device, in order to effectively diffuse the heat generated by the LED chip to the substrate side, it is preferable that the LED chip be bonded to the mounting pad on the entire surface by a bonding material. If a large amount of bonding material is supplied during the process, the melted bonding material may spread around or wrap around the LED chip during reflow. In order to solve this problem, for example, it is proposed to provide a protrusion on the outside of the portion of the mounting pad to which the LED chip is bonded (Patent Document 1) or to provide a groove (Patent Document 2).

特開2009−76524号公報JP, 2009-76524, A 特開2012−109352号公報JP 2012-109352 A

LEDチップには、1mm角、0.7mm角、0.5mm角など大きさが異なるものがあるが、上述した従来の技術では、実装パッドに設ける突出部や溝はLEDチップのサイズに応じて決まるため、異なる大きさのLEDチップ毎に実装基板を用意する必要がある。一方、最大のLEDチップに対応する面積の大きな実装パッドを設けた実装基板を用いることにより、どの大きさのLEDチップにも対応することは可能であるが、そのような大きな実装パッドに小さいLEDチップを接合した場合、リフロー時に溶融した接合材が流動化することにより、LEDチップが本来固定すべき位置からずれたり回転したりする場合がある。その状態で接合材が固化すると、LEDチップは位置がずれたまま接合される。このような発光装置を照明等の光源に適用すると、光源の位置がずれているため光学設計が困難になるという問題がある。   Some LED chips have different sizes, such as 1 mm square, 0.7 mm square, 0.5 mm square, etc. In the above-mentioned prior art, the projections and grooves provided on the mounting pad depend on the size of the LED chip. In order to determine it, it is necessary to prepare a mounting substrate for each of the LED chips of different sizes. On the other hand, although it is possible to cope with LED chips of any size by using a mounting substrate provided with a mounting pad having a large area corresponding to the largest LED chip, a small LED can be used for such a large mounting pad When the chips are joined, the LED chip may be displaced or rotated from a position to be originally fixed by fluidizing the molten bonding material at the time of reflow. When the bonding material solidifies in that state, the LED chips are bonded with their positions shifted. When such a light emitting device is applied to a light source such as illumination, there is a problem that the optical design becomes difficult because the position of the light source is shifted.

本発明は、LEDチップの位置ずれや余分な接合材の広がりの問題がなく、しかも異なる大きさのLEDチップに対応できる汎用の実装基板を提供すること、そしてこのような実装基板にLEDチップを実装した半導体発光装置を提供することを課題とする。   The present invention provides a general-purpose mounting substrate that can be used for LED chips of different sizes without the problem of misalignment of the LED chips and the spread of extra bonding material, and the LED chips on such mounting substrates. An object is to provide a mounted semiconductor light emitting device.

上記課題を解決するため、本発明の半導体発光装置は、その実装基板の実装パッドが、複数のLEDチップの大きさに対応した複数の実装領域を持つ。複数の実装領域は、厚みが異なり、隣接する領域の境界に段差が形成されている。   In order to solve the above problems, in the semiconductor light emitting device of the present invention, the mounting pad of the mounting substrate has a plurality of mounting areas corresponding to the sizes of the plurality of LED chips. The plurality of mounting areas have different thicknesses, and a step is formed at the boundary between adjacent areas.

すなわち本発明の半導体発光装置は、金属膜からなる実装パッドを有する実装基板と、前記実装パッドに接合材を介して接合された半導体発光素子と、を備え、前記実装パッドは、第一の領域と、当該第一の領域に内側に位置する第二の領域と、を有し、前記第一の領域と前記第二の領域との境界において、前記実装パッドの厚み方向に段差を有する。   That is, the semiconductor light emitting device of the present invention includes a mounting substrate having a mounting pad made of a metal film, and a semiconductor light emitting element joined to the mounting pad via a bonding material, and the mounting pad is a first region And a second region located inside the first region, and has a step in the thickness direction of the mounting pad at the boundary between the first region and the second region.

また半導体発光素子は、大きさの異なる複数の発光素子のいずれかであり、前記第二の領域の外周は、前記複数の発光素子のうち最大の発光素子の外周より小さく且つ二番目に大きい発光素子の外周と同じ大きさであるか、それより大きい。   The semiconductor light emitting device is any of a plurality of light emitting devices having different sizes, and the outer periphery of the second region is smaller in size than the outer periphery of the largest light emitting device of the plurality of light emitting devices and the second largest light emission The same size as or larger than the outer circumference of the element.

本発明によれば、複数の実装領域が段差によって区切られているため、例えば、実装パッドの外周よりも小さいLEDチップを実装する場合、接合材がリフロー時に溶融して流動状態になってもLEDチップの移動範囲が段差で区切られた内側に制限されるため、位置ずれの問題がない。また接合材を小さいLEDチップが置かれる領域のみに供給することで、接合材が実装パッドの外側に広がるのを防止することができる。実装パッドの外周と同程度の大きいLEDチップを実装する場合には、溶融した接合材の、実装パッド表面に留まる力(表面張力)によってLEDチップは実装パッドの外周に沿った位置に位置づけられるので、位置ずれを生じることはない。   According to the present invention, since the plurality of mounting areas are separated by the step, for example, when mounting an LED chip smaller than the outer periphery of the mounting pad, the LED is melted even when the bonding material melts and flows Since the movement range of the chip is limited to the inside divided by the step, there is no problem of misalignment. Further, by supplying the bonding material only to the area where the small LED chip is placed, it is possible to prevent the bonding material from spreading outside the mounting pad. When mounting an LED chip as large as the outer periphery of the mounting pad, the LED chip is positioned along the outer periphery of the mounting pad by the force (surface tension) of the melted bonding material remaining on the surface of the mounting pad There is no misalignment.

半導体発光装置の一実施形態を示す側断面図。FIG. 1 is a side cross sectional view showing an embodiment of a semiconductor light emitting device. 第一実施形態の汎用実装基板を示す図で、(A)は上面から見た図、(B)は(A)のA−A線断面図。It is a figure which shows the versatile mounting board of 1st embodiment, (A) is the figure seen from the upper surface, (B) is the sectional view on the AA line of (A). 第一実施形態の半導体発光装置の製造方法を説明する工程図。FIG. 7 is a process diagram illustrating a method of manufacturing the semiconductor light emitting device of the first embodiment. (A)〜(C)は、第一実施形態の汎用実装基板へスモールチップを実装する手順を示す図。(A)-(C) are figures which show the procedure which mounts a small chip to the general purpose mounting substrate of 1st embodiment. (A)〜(C)は、第一実施形態の汎用実装基板へラージチップを実装する手順を示す図。(A)-(C) are the figures which show the procedure which mounts a large chip to the general purpose mounting board of 1st embodiment. 第一実施形態の汎用実装基板の変形例1を示す図で、(A)は実装パッド部分の断面図、(B)は実装パッドへのスモールチップの実装状態を示す図、(C)は実装パッドへのラージチップの実装状態を示す図。It is a figure which shows the modification 1 of the general purpose mounting board of 1st embodiment, (A) is sectional drawing of a mounting pad part, (B) is a figure which shows the mounting state of the small chip to a mounting pad, (C) is mounting. The figure which shows the mounting state of the large chip to a pad. 第一実施形態の汎用実装基板の変形例2を示す図で、(A)は上面から見た図、(B)は(A)のB−B線断面図。It is a figure which shows the modification 2 of the general purpose mounting board of 1st embodiment, (A) is the figure seen from the upper surface, (B) is a BB sectional view taken on the line of (A). 第二実施形態の汎用実装基板の一例を示す図で、(A)は上面から見た図、(B)は(A)のC−C線断面図。It is a figure which shows an example of the general purpose mounting board of 2nd embodiment, (A) is the figure seen from the upper surface, (B) is the CC sectional view taken on the line of (A). 第二実施形態の汎用実装基板の別の例を示す図で、(A)は上面から見た図、(B)は(A)のD−D線断面図。It is a figure which shows another example of the general purpose mounting board of 2nd embodiment, (A) is the figure seen from the upper surface, (B) is the DD sectional view taken on the line of (A).

以下、本発明の半導体発光装置の実施形態を説明する。
図1に、本発明の半導体発光装置の一実施形態を示す。この半導体発光装置は、実装基板10と、実装基板10に接合材20によって接合されたLEDチップ30と、を備える。さらに、通常は、LEDチップ30は透光性樹脂や蛍光体含有樹脂などの封止樹脂で封止される。封止樹脂50で封止する場合には、未硬化の封止樹脂50を注入するための筒状の壁部材60や内面が逆円錐台形の反射部材などを実装基板10の外周に沿って配置することができる。
Hereinafter, embodiments of the semiconductor light emitting device of the present invention will be described.
FIG. 1 shows an embodiment of a semiconductor light emitting device of the present invention. The semiconductor light emitting device includes a mounting substrate 10 and an LED chip 30 bonded to the mounting substrate 10 by a bonding material 20. Furthermore, the LED chip 30 is usually sealed with a sealing resin such as a translucent resin or a phosphor-containing resin. In the case of sealing with the sealing resin 50, a cylindrical wall member 60 for injecting the uncured sealing resin 50, a reflecting member having an inverted frusto-conical shape on the inner surface, and the like are arranged along the outer periphery of the mounting substrate 10. can do.

実装基板10は、ガラスエポキシ基板、セラミック多層基板等の絶縁基板からなり、LEDチップ30に給電するためのAu、Cu等の金属からなる導体配線11が形成されており、この導体配線11の端部にLEDチップ30を接合するための実装パッド13が形成されている。実装パッド13は、特定のサイズのLEDチップ30ではなく、複数のサイズのLEDチップのうち任意のサイズのLEDチップを実装できる形状を持つ。実装パッドの具体的な形状については後述する。なお、導体配線11及び実装パッド13は、金属の単層膜のほか、異なる金属からなる多層膜であってもよく、その構造に応じて、フォトリソブラフィ、スパッタリング、蒸着等の任意の方法で絶縁基板上に形成することができる。   The mounting substrate 10 is made of an insulating substrate such as a glass epoxy substrate or a ceramic multilayer substrate, and a conductor wiring 11 made of a metal such as Au or Cu for feeding power to the LED chip 30 is formed. A mounting pad 13 for bonding the LED chip 30 is formed in the portion. The mounting pad 13 has a shape capable of mounting an LED chip of any size among a plurality of LED chips of a plurality of sizes, not the LED chip 30 of a specific size. The specific shape of the mounting pad will be described later. The conductor wiring 11 and the mounting pad 13 may be a multilayer film made of different metals in addition to a single layer film of metal. Depending on the structure, the conductor wiring 11 and the mounting pad 13 may be formed by any method such as photolithography, sputtering, or evaporation. It can be formed on an insulating substrate.

接合材20は、金属である実装パッド13とLEDチップ30の電極面とを接合するもので、比較的低融点で溶融する金属材料、例えばSnPb系、SnAgCu系、AuSn系、SnZn系、ZnCu系などの合金を用いることができる。このような金属材料は溶融時(融点)において、金属からなる実装パッド13に対するぬれ性に優れ、且つ絶縁基板に対するぬれ性が低いため、実装パッド13に滴下したときに、実装パッド13の外縁から、その外側である絶縁基板に広がることなく、実装パッド13上に留まり、その上に置かれたLEDチップ30の移動を抑制する。   The bonding material 20 bonds the mounting pad 13 which is a metal and the electrode surface of the LED chip 30, and is a metal material which melts at a relatively low melting point, such as SnPb, SnAgCu, AuSn, SnZn, ZnCu Alloys such as can be used. Such a metal material has excellent wettability to the mounting pad 13 made of metal in melting (melting point) and low wettability to the insulating substrate, and therefore when dropped onto the mounting pad 13, the outer edge of the mounting pad 13 , Without spreading on the insulating substrate which is the outside, it stays on the mounting pad 13 and suppresses the movement of the LED chip 30 placed thereon.

LEDチップ30は、p型半導体とn型半導体とを接合した構造を有し、片面に両電極が形成された片面タイプと、表面と裏面にそれぞれ電極が形成された両面タイプがある。本実施形態では、いずれのタイプも採用することが可能であるが、上面に両電極が形成された片面タイプの場合、裏面側に金属膜を形成しておくことが好ましい。図1では、裏面側にn電極が配置され、上面側の中央にp電極が配置された両面タイプを用いた例を示しており、n電極が形成された裏面が、接合材20により実装基板10の実装パッド13に接合され、p電極が実装基板10の導体配線11(電極パッド)にAg等の線材40でワイヤーボンディングされている。なお半導体としては、限定されるものではないが、例えば、GaAs、GaP、AlGaInP、InGaN等の化合物半導体が用いられる。また電極は、Al、Ag、Au、Pd等の単層膜或いは積層膜からなる。   The LED chip 30 has a structure in which a p-type semiconductor and an n-type semiconductor are joined, and includes a single-sided type in which both electrodes are formed on one side and a double-sided type in which electrodes are formed on the front and back sides. In this embodiment, although any type can be adopted, in the case of a single-sided type in which both electrodes are formed on the upper surface, it is preferable to form a metal film on the back surface side. FIG. 1 shows an example using a double-sided type in which an n electrode is disposed on the back surface side and a p electrode is disposed at the center on the top surface side, and the back surface on which the n electrode is formed The p electrode is bonded to the conductor wiring 11 (electrode pad) of the mounting substrate 10 by wire 40 such as Ag. The semiconductor is not limited, but, for example, compound semiconductors such as GaAs, GaP, AlGaInP, InGaN and the like are used. The electrode is formed of a single layer film or a laminated film of Al, Ag, Au, Pd or the like.

LEDチップ30の形状は、特に限定されないが、一般には上面から見た形状が四角形のものが多用されており、それらを用いることができる。またLEDチップ30の大きさは、上面から見た四角形のサイズとして、1mm角、0.7mm角、0.5mm角などがある。本実施形態の半導体発光装置は、実装基板として複数のサイズのLEDチップに対応した実装基板を用いており、特定のサイズに限定されることなく、複数のサイズのLEDチップのうち任意のLEDチップを用いることができる。   The shape of the LED chip 30 is not particularly limited, but generally the one having a square shape as viewed from the top is often used, and they can be used. The size of the LED chip 30 is, for example, 1 mm square, 0.7 mm square, or 0.5 mm square as a size of a square viewed from the top. The semiconductor light-emitting device of this embodiment uses a mounting substrate corresponding to a plurality of sizes of LED chips as a mounting substrate, and any LED chip among a plurality of sizes of LED chips is not limited to a specific size. Can be used.

次に上述した半導体発光装置に用いられる実装基板10の実施形態を説明する。ここでは、一例としてサイズの異なる2つのLEDチップ、ラージチップ30L及びスモールチップ30S、に対応した実装パッドを有する実装基板の具体例を説明する。   Next, an embodiment of the mounting substrate 10 used for the above-described semiconductor light emitting device will be described. Here, a specific example of a mounting substrate having mounting pads corresponding to two LED chips having different sizes, the large chip 30L and the small chip 30S, will be described as an example.

<第一実施形態>
図2に、第一実施形態の実装基板10の実装パッド部分を示す。図中、(A)は実装パッド13の上面図、(B)は(A)のA−A線断面図である。図示するように、本実施形態の実装パッド13は、その上面から見た形状が、実装されるLEDの形状と同様の形状(図示する例では四角形)であり、基板表面からの厚みが所定の厚みt1を持つ第一の領域131と、第一の領域131の内側にあって、第一の領域131とは厚みが異なる第二の領域132が形成されている。すなわち第一の領域131と第二の領域132との間に厚みの段差13Dが形成されている。本実施形態では、第二の領域132の厚みt2は、第一の領域の厚みt1より薄く、従って、第二の領域は凹部として形成されている。
First Embodiment
FIG. 2 shows the mounting pad portion of the mounting substrate 10 of the first embodiment. In the figure, (A) is a top view of the mounting pad 13, (B) is a cross-sectional view taken along the line A-A of (A). As illustrated, the mounting pad 13 of the present embodiment has a shape as viewed from the upper surface that is similar to the shape of the LED to be mounted (a square in the illustrated example) and has a predetermined thickness from the substrate surface A first region 131 having a thickness t1 and a second region 132 which is inside the first region 131 and has a thickness different from that of the first region 131 are formed. That is, the step 13D of thickness is formed between the first area 131 and the second area 132. In the present embodiment, the thickness t2 of the second region 132 is smaller than the thickness t1 of the first region, and thus the second region is formed as a recess.

第二の領域132の外周は、ラージチップ30Lの外周よりも小さく、スモールチップ30Sの外周と同じかそれより小さい。例えば図2に示す縦方向の幅では、ラージチップの幅をw30L、スモールチップの幅をw30Sとすると、第一の領域の幅W1と第二の領域の幅W2は、
W1≧w30L>W2≧w30S
の関係であることが好ましい。例えばW1はW2の√2倍、ないし2倍の幅となるように選択される。横方向の幅についても同様である。
The outer periphery of the second region 132 is smaller than the outer periphery of the large chip 30L and equal to or smaller than the outer periphery of the small chip 30S. For example, in the width in the vertical direction shown in FIG. 2, assuming that the width of the large chip is w 30L and the width of the small chip is w 30S , the width W1 of the first region and the width W2 of the second region are
W1 ≧ w 30L > W2 ≧ w 30S
It is preferable that For example, W1 is selected to be √2 times or twice as wide as W2. The same applies to the width in the lateral direction.

このような実装パッドを持つ実装基板10は、例えば、印刷、フォトリソグラフィー、蒸着等の手法で絶縁基板上に金属膜を形成して、導体配線11と実装パッド13を作成する際に、第二の領域の厚みt2となるように実装パッド13の全面積の金属膜を成膜した後、第二の領域をマスクした状態でその周囲にさらに厚み(t1−t2)の金属膜を成膜してもよいし、第一の領域の厚みt1となるように実装パッド13の全面積の金属膜を成膜した後、第二の領域をエッチングし、深さ(t1−t2)の凹部を形成してもよい。   The mounting substrate 10 having such a mounting pad is formed by, for example, forming a metal film on the insulating substrate by a method such as printing, photolithography, vapor deposition, etc. to form the conductor wiring 11 and the mounting pad 13. The metal film of the entire area of the mounting pad 13 is formed to have the thickness t2 of the area of the above, and then the metal film of a further thickness (t1-t2) is formed around the second area masked. The metal film of the entire area of the mounting pad 13 may be formed to have a thickness t1 of the first region, and then the second region is etched to form a recess having a depth (t1-t2). You may

次に本実施形態の実装基板を用いた半導体発光装置の製造方法について、図3〜図5を参照して説明する。   Next, a method of manufacturing a semiconductor light emitting device using the mounting substrate of the present embodiment will be described with reference to FIGS.

まず実装基板10として、所定の導体配線11と上述した凹部(第二の領域)132を持つ実装パッド13を形成した実装基板を用意する(S301)。実装するLEDチップのサイズに合わせて、凹部132に所定の量の接合材を供給する(S302)。この状態において、接合材20は、AuSn等の金属材料のほかにバインダーやフラックス剤などを含むペースト状であり、塗布やポッティングにより供給することができる。供給する接合材の量は、スモールチップ30Sの場合には、図4(A)に示すように、凹部132の底面を覆うことができ且つ凹部132の容積よりやや少ない程度とする。ラージチップ30Lの場合には、図5(A)に示すように、凹部132に充填された後、さらに第一の領域131を覆うことができる程度とする。このような接合材の量は、凹部132の大きさとLEDチップのサイズにより経験的に知ることができるので、それら経験値を元に適切に供給する。   First, a mounting substrate on which the mounting pad 13 having the predetermined conductor wiring 11 and the recess (second region) 132 described above is formed is prepared as the mounting substrate 10 (S301). A predetermined amount of bonding material is supplied to the recess 132 in accordance with the size of the LED chip to be mounted (S302). In this state, the bonding material 20 is in the form of a paste containing a binder, a flux agent, and the like in addition to a metal material such as AuSn, and can be supplied by coating or potting. In the case of the small chip 30S, as shown in FIG. 4A, the amount of the bonding material to be supplied can cover the bottom of the recess 132 and be slightly smaller than the volume of the recess 132. In the case of the large chip 30L, as shown in FIG. 5A, after being filled in the recess 132, the first region 131 can be further covered. The amount of such a bonding material can be empirically known from the size of the recess 132 and the size of the LED chip, and thus these empirical values are appropriately supplied.

なおラージチップ30Lの場合には、必要に応じて、凹部132だけでなく、凹部132の周囲(第一の領域)131に接合材を供給してもよい。ただし凹部132に供給した接合材と、第一の領域に供給した接合材との間に、空気の層ができないように、第一の領域に供給する接合材は複数個所に分けて供給し、空気の逃げ道を確保しておくことが好ましい。   In the case of the large chip 30L, the bonding material may be supplied not only to the recess 132 but also to the periphery (first region) 131 of the recess 132 as necessary. However, the bonding material supplied to the first area is divided into a plurality of parts and supplied so that there is no air layer between the bonding material supplied to the recess 132 and the bonding material supplied to the first area, It is preferable to secure a way for air to escape.

ついで実装パッド13上にLEDチップ30を配置する(S303)。スモールチップ30Sであれば、凹部132内に(図4(B))、ラージチップ30Lであれば、第一の領域131の外側の輪郭に沿って(図5(B))、LEDチップを載せて押し当てる。LEDチップ30を接合材20により実装基板上に仮に固定した状態で、実装基板10をリフロー炉に入れ、所定時間加熱した後、接合材20を硬化させてLEDチップ30を接合する(S304)。リフロー時の加熱により、ペースト状の接合材20は溶融し、流動性を持つが、スモールチップ30Sは、実装パッド13の凹部132内に配置されているので、位置ずれが防止された状態で、接合材20が硬化するのに伴い第二の領域132上に固定、接合される(図4(c)、図5(c))。   Then, the LED chip 30 is disposed on the mounting pad 13 (S303). In the case of the small chip 30S, the LED chip is placed in the recess 132 (FIG. 4B), and in the case of the large chip 30L, along the outer contour of the first region 131 (FIG. 5B). Press down. In a state where the LED chip 30 is temporarily fixed on the mounting substrate by the bonding material 20, the mounting substrate 10 is placed in a reflow furnace and heated for a predetermined time, and then the bonding material 20 is cured to bond the LED chip 30 (S304). The paste-like bonding material 20 is melted by heating at the time of reflow and has fluidity, but since the small chip 30S is disposed in the concave portion 132 of the mounting pad 13, it is possible to prevent positional deviation, As the bonding material 20 cures, it is fixed and bonded onto the second region 132 (FIG. 4C, FIG. 5C).

その後、LEDチップの上側に設けられた電極(不図示)を、実装基板10の電極パッドにワイヤーボンディングすること(S305)、必要に応じて、ワイヤーボンディング後のLEDチップを透光性樹脂で封止すること(S306)は、従来の半導体発光装置の製造と同様である。   Thereafter, wire bonding an electrode (not shown) provided on the upper side of the LED chip to the electrode pad of the mounting substrate 10 (S305), and if necessary, seal the LED chip after wire bonding with a translucent resin Stopping (S306) is similar to the manufacture of a conventional semiconductor light emitting device.

本実施形態によれば、実装基板のスモールチップが実装される領域を凹部とすることにより、接合材によりスモールチップを実装する時に、接合材が溶融して流動性を帯びてもスモールチップの移動は段差によって制限されるため、位置ずれを生じることはない。また接合材が凹部である第二の領域から広がっても、第一の領域に留まり、ワイヤーボンディング部まで接合材が及ぶことはない。ラージチップを実装する場合は、チップの大きさに対応する、凹部のない実装パッドが形成された従来の実装基板と同様であり、適切な量の接合材を用いることにより、ラージチップを接合材に配置した状態すなわち実装パッドの四辺とチップの四辺とがそろった状態を保つことができる。また実装マッドを構成する金属と絶縁基板との接合材に対するぬれ性の相違によって、接合材が外側に広がるのが防止される。   According to the present embodiment, by making the area of the mounting substrate on which the small chip is mounted a concave, movement of the small chip occurs even if the bonding material melts and takes on fluidity when the small chip is mounted with the bonding material. Is limited by the level difference, so there is no misalignment. Further, even if the bonding material extends from the second region which is the recess, it remains in the first region and the bonding material does not extend to the wire bonding portion. In the case of mounting a large chip, it is similar to a conventional mounting substrate having a mounting pad without a recess corresponding to the size of the chip, and the bonding material for the large chip is used by using an appropriate amount of bonding material. It is possible to maintain the arrangement state in which the four sides of the mounting pad and the four sides of the chip are aligned. Further, due to the difference in the wettability to the bonding material between the metal forming the mounting mud and the insulating substrate, the bonding material is prevented from spreading outward.

そして、この実装基板を用いることにより、LEDチップの位置ずれがなく、且ついずれのサイズのチップも、その裏面全面が接合材を介して実装パッドに接合されるのでLEDチップが発する熱を放散させやすい構造の半導体発光装置が提供される。   Then, by using this mounting substrate, all the chips of any size do not have displacement of the LED chip, and the entire back surface is bonded to the mounting pad through the bonding material, so that the heat generated by the LED chip is dissipated A semiconductor light emitting device having an easy structure is provided.

なお以上説明した実施形態では、LEDチップとして裏面に一方の電極、上面に他方の電極を設けた両面タイプのものを用いる場合を説明したが、上面に両電極を配置したLEDチップであっても同様に適用することができる。   In the embodiment described above, the case of using a double-sided type in which one electrode is provided on the back surface and the other electrode is provided on the top surface as the LED chip has been described. The same applies.

また以上の実施形態では、絶縁基板上に単一のLEDチップを実装する場合を説明したが、実装するLEDチップの数は複数であってもよい。その場合、絶縁基板上に複数の実装パッドが形成された実装基板を用意する。複数の実装パッドのうち少なくとも一つの実装パッドが上述した汎用実装パッドである場合も本実施形態に包含される。   Moreover, although the case where a single LED chip was mounted on an insulating substrate was demonstrated in the above embodiment, the number of LED chips to mount may be multiple. In that case, a mounting substrate in which a plurality of mounting pads are formed on the insulating substrate is prepared. The present embodiment also includes the case where at least one mounting pad among the plurality of mounting pads is the above-described general-purpose mounting pad.

<第一の実施形態の変形例1>
第一の実施形態の実装基板では、実装パッドの、スモールチップに対応する第二の領域は、厚みが薄い凹部であったが、第二の領域を第一の領域より厚みの厚い凸部としてもよい。
<Modified Example 1 of First Embodiment>
In the mounting substrate of the first embodiment, the second region of the mounting pad corresponding to the small chip is a concave portion having a small thickness, but the second region is a convex portion having a thickness larger than that of the first region. It is also good.

本変形例の実装基板の実装パッド130と、この実装パッド130にスモールチップ30S、ラージチップ30Lが接合材により接合された状態を、それぞれ図6(A)〜(C)に示す。この変形例の実装パッドも、第一の実施形態と同様に、成膜を2段階に分けて行う、或いは成膜とエッチングを組み合わせることにより、領域間に段差13Dを持つ実装パッドを形成することができる。   FIGS. 6A to 6C show the mounting pad 130 of the mounting substrate of this modification and the state in which the small chip 30S and the large chip 30L are bonded to the mounting pad 130 with a bonding material. Similarly to the first embodiment, the mounting pad of this modification is formed by dividing the film formation into two steps or by combining the film formation and the etching to form a mounting pad having a step 13D between the regions. Can.

本変形例の実装基板を用いた半導体発光装置の製造方法は、図3の手順で行うことは第一の実施形態と同様であるが、ラージチップを接合する場合(図3のS302)、接合材は凸部である第二の領域132だけでなく、第一の領域131にも、例えば四辺に沿って或いは四隅に複数個所、供給してもよい。それにより第二の領域132より段差の低い第一の領域131の全体に接合材20を行き渡らせることができ、接合材を介してラージチップの裏面全体を実装パッドと接合することができ、熱引きが良好な半導体発光装置を得ることができる。   The method of manufacturing a semiconductor light emitting device using the mounting substrate of this modification is the same as that of the first embodiment in the procedure of FIG. 3 but in the case of bonding large chips (S 302 in FIG. 3), bonding The material may be supplied not only to the second region 132 which is a convex portion but also to the first region 131, for example, along four sides or at a plurality of places at four corners. As a result, the bonding material 20 can be spread over the entire first region 131 having a smaller step than the second region 132, and the entire back surface of the large chip can be bonded to the mounting pad via the bonding material. It is possible to obtain a semiconductor light emitting device with good pulling.

本変形例においても、スモールチップを接合する際に、そのサイズに相当する第二の領域に配置することで、接合材の溶融時、その表面張力によって、スモールチップの移動は接合材が存在する第二の領域の上に制限されるので、位置ずれを防止でき、第一実施形態と同様の効果を得られる。   Also in this modification, when bonding the small chip, by arranging in the second region corresponding to the size, when the bonding material is melted, the movement of the small chip exists due to the surface tension of the bonding material. Since the second region is limited, positional deviation can be prevented, and the same effect as that of the first embodiment can be obtained.

<第一の実施形態の変形例2>
第一の実施形態では、スモールチップとラージチップのサイズが異なる2種類のLEDチップを実装するための実装基板を説明したが、段差を複数設けることで、3種以上のLEDチップに対応することも可能である。
<Modified Example 2 of First Embodiment>
In the first embodiment, the mounting substrate for mounting two types of LED chips having different sizes of the small chip and the large chip has been described, but by providing a plurality of steps, it is possible to cope with three or more types of LED chips. Is also possible.

図7に、3種以上のLEDチップに対応した実装基板の実装パッド1300の一例を示す。図示する例では、実装パッド1300の外側から順に、第一の領域131、それより厚みの薄い第二の領域132、さらに厚みの薄い第三の領域133が形成されている。すなわち第一の領域131の内側に凹部が形成され、その凹部の内側にさらに凹部が形成された構造を有している。これら第一〜第三の領域の幅(任意の方向の幅)W1、W2、W3は、大きさが異なる3種のLEDチップ、ラージチップ、ミドルチップ及びスモールチップの同方向の幅を、それぞれ、w30L、w30M、w30S(w30L>w30M>w30S)とすると、次の関係であることが好ましい。
W1≧w30L>W2≧w30M>W3≧w30S
An example of the mounting pad 1300 of the mounting board corresponding to 3 or more types of LED chips is shown in FIG. In the illustrated example, the first area 131, the thinner second area 132, and the thinner third area 133 are formed sequentially from the outside of the mounting pad 1300. That is, a recess is formed inside the first region 131, and a recess is further formed inside the recess. The widths (widths in any direction) W1, W2, and W3 of the first to third regions respectively indicate the widths of three types of LED chips having different sizes, the large chip, the middle chip, and the small chip in the same direction. , W30L , w30M , w30S ( w30L > w30M > w30S ), the following relationship is preferable.
W1 ≧ w 30L > W2 ≧ w 30M > W3 ww 30S

本変形例においても、第二の領域132を画定する凹部及び第三の領域133を画定する凹部によって、ミドルチップ及びスモールチップはそれぞれ位置ずれなく実装基板上に接合することができる。   Also in this modification, the middle chip and the small chip can be joined on the mounting substrate without misalignment, respectively, by the recess that defines the second region 132 and the recess that defines the third region 133.

なお本変形例では、第二の領域及び第三の領域を、第一の領域に対し、入れ子状に凹部としたが、第二の領域及び第三の領域を順次、厚みが厚い凸部となるようにしてもよいし、いずれか一方を凹部、他方を凸部とすることも可能であり、同様の効果を得ることができる。   In the present modification, the second area and the third area are recessed in a nested manner with respect to the first area, but the second area and the third area are sequentially formed to be thick projections It is also possible to use one of them as a recess and the other as a protrusion, and the same effect can be obtained.

<第二実施形態>
第一実施形態とその変形例では、実装パッドに設けられる複数の領域を段差によって分けたが、領域を分ける手段として、段差以外の手段を加えてもよい。以下、大きさが異なる3種のLEDチップ、ラージチップ、ミドルチップ及びスモールチップに対応する実装基板を例に本実施形態を説明する。
Second Embodiment
In the first embodiment and its modification, the plurality of regions provided on the mounting pad are divided by the step, but as means for dividing the region, means other than the step may be added. Hereinafter, the present embodiment will be described by exemplifying mounting boards corresponding to three types of LED chips, large chips, middle chips, and small chips having different sizes.

図8及び図9に示す実装パッドは、いずれも段差のほかにスリット或いは溝を形成した実装パッドである。図8に示す実装パッド130Aは、ラージチップに対応する大きさの最も外側に位置する第一の領域131の内側に、ミドルチップに対応する第二の領域132が段差をもって形成されており、さらに第二の領域132の外周をなす四辺の内側に、四辺と平行にスリット137が形成されている。4本のスリット137で囲まれた領域が、スモールチップに対応する第三の領域133である。   The mounting pads shown in FIGS. 8 and 9 are mounting pads in which slits or grooves are formed in addition to the steps. In the mounting pad 130A shown in FIG. 8, a second region 132 corresponding to the middle chip is formed with a step inside the first region 131 located on the outermost side of the size corresponding to the large chip. Inside the four sides forming the outer periphery of the second region 132, slits 137 are formed in parallel with the four sides. The area surrounded by the four slits 137 is a third area 133 corresponding to the small chip.

また図9に示す実装パッド130Bは、第一の領域131の内側に、スモールチップに対応する第三の領域133が段差をもって形成されており、第一の領域131の内側に、4つのL字状の溝138が形成されており、4つの溝138で囲まれた領域(第三の領域を除く)が、ミドルチップに対応する第二の領域132である。なお溝138ではなく、スリットでもよい。   Further, in the mounting pad 130B shown in FIG. 9, the third region 133 corresponding to the small chip is formed with a step inside the first region 131, and four L-shapes are formed inside the first region 131. The groove 138 is formed, and the area (except the third area) surrounded by the four grooves 138 is a second area 132 corresponding to the middle chip. Instead of the grooves 138, slits may be used.

両図において、各領域の幅と各LEDチップの幅との関係は、第一実施形態の変形例2と同様である。なお図8では直線状のスリット、図9ではL字状の溝を例示したが、スリット或いは溝の形状は、図8と図9で逆でもよいし、適宜組み合わせた形状であってもよい。スリットと溝を入れ替えてもよい。また直線状のスリットは1本を複数に分割したスリットでもよい。   In both figures, the relationship between the width of each area and the width of each LED chip is the same as that of the second modification of the first embodiment. Although FIG. 8 illustrates linear slits and FIG. 9 illustrates L-shaped grooves, the shapes of the slits or grooves may be reversed in FIGS. 8 and 9, or may be appropriately combined. Slits and grooves may be interchanged. The linear slit may be a slit obtained by dividing one into a plurality.

本実施形態においても、領域と領域とを隔てる段差によって、その内側に配置されるLEDチップの位置ずれを防止することは第一実施形態と同様である。一方、スリット或いは溝は、実装パッドの材質(金属膜)と実装パッドが形成される基板面の材質(ガラスエポキシ、セラミック等)との接合材に対するぬれ性の違いを利用して、接合材が移動する範囲を実装パッド内に制限することによって、LEDチップの移動を制限する。これにより、例えば、スリット137で囲まれた領域に配置されたLEDチップは、接合材が溶融して流動化しても、接合材とともにその領域に留まり、接合材が硬化するとともに位置ずれなく実装パッド上に接合される。   Also in the present embodiment, it is the same as that of the first embodiment in that the steps separating the regions prevent the positional deviation of the LED chips disposed on the inner side. On the other hand, the slits or grooves are made of a bonding material utilizing the difference in wettability to the bonding material between the material of the mounting pad (metal film) and the material of the substrate surface (glass epoxy, ceramic etc.) on which the mounting pad is formed. By restricting the movement range within the mounting pad, the movement of the LED chip is limited. Thus, for example, even if the bonding material is melted and fluidized, the LED chip disposed in the area surrounded by the slits 137 stays with the bonding material in that area, and the bonding material is cured and the mounting pad is not displaced. Bonded on top.

このように本実施形態によれば、段差とスリット或いは溝を併用することで、サイズが異なる3種以上のLEDチップのいずれにも対応可能な実装基板が提供され、またこの実装基板を用いることにより、どのサイズのLEDチップを実装した場合にも、位置ずれがなく且つ接合材の余分な広がりが抑制された半導体発光装置を得ることができる。   As described above, according to the present embodiment, by using the step and the slit or the groove in combination, a mounting substrate that can correspond to any of three or more types of LED chips having different sizes is provided, and the mounting substrate is used. Thus, regardless of the size of the LED chip mounted, it is possible to obtain a semiconductor light emitting device which is free from positional deviation and in which the excessive spread of the bonding material is suppressed.

以上、本発明の半導体発光装置及びそれに用いる実装基板の実施形態を説明したが、各実施形態の説明に用いた図面は一例であって、半導体発光装置の構造、LEDチップのタイプや形状などは、これら図面に限定されることなく、本発明は公知の構造やタイプに適用することが可能である。   The embodiments of the semiconductor light emitting device of the present invention and the mounting substrate used therefor have been described above, but the drawings used for the description of each embodiment are merely an example, and the structure of the semiconductor light emitting device, the type and shape of the LED chip, etc. The present invention can be applied to known structures and types without being limited to these drawings.

10:実装基板、11:導体配線、13:実装パッド、20:接合材、30:LEDチップ(半導体発光素子)、30L:ラージチップ、30S:スモールチップ、31:電極(金属膜)、40:線材、50:封止樹脂、60:壁材、130:実装パッド、130A:実装パッド、130B:実装パッド、131:第一の領域、132:第二の領域、133:第三の領域、137:スリット、138:溝、1300:実装パッド 10: mounting substrate, 11: conductor wiring, 13: mounting pad, 20: bonding material, 30: LED chip (semiconductor light emitting element), 30L: large chip, 30S: small chip, 31: electrode (metal film), 40: Wire rod 50: sealing resin 60: wall material 130: mounting pad 130A: mounting pad 130B: mounting pad 131: first area 132: second area 133: third area 137 : Slit, 138: Groove, 1300: Mounting pad

Claims (10)

金属膜からなる実装パッドを有する実装基板と、前記実装パッドに接合材を介して接合された半導体発光素子と、を備え、
前記実装パッドは、第一の領域と、当該第一の領域に内側に位置する第二の領域と、を有し、前記第一の領域と前記第二の領域との境界において、前記実装パッドの厚み方向に段差を有することを特徴とする半導体発光装置。
A mounting substrate having a mounting pad made of a metal film, and a semiconductor light emitting device joined to the mounting pad via a bonding material.
The mounting pad has a first region and a second region located inside the first region, and at the boundary between the first region and the second region, the mounting pad What is claimed is: 1. A semiconductor light emitting device having a step in the thickness direction of the semiconductor device.
請求項1に記載の半導体発光装置であって、
前記半導体発光素子は、大きさの異なる複数の発光素子のいずれかであり、前記第二の領域の外周は、前記複数の発光素子のうち最大の発光素子の外周より小さく且つ二番目に大きい発光素子の外周と同じ大きさであるか、それより大きいことを特徴とする半導体発光装置。
The semiconductor light emitting device according to claim 1, wherein
The semiconductor light emitting device is any of a plurality of light emitting devices of different sizes, and the outer periphery of the second region is smaller than the periphery of the largest light emitting device of the plurality of light emitting devices and is the second largest light emission A semiconductor light emitting device having the same size as or larger than the outer circumference of the device.
請求項1または2に記載の半導体発光装置であって、
前記実装パッドは、前記第二の領域は膜厚が、前記第一の領域の膜厚よりも厚いことを特徴とする半導体発光装置。
A semiconductor light emitting device according to claim 1 or 2, wherein
The semiconductor light-emitting device according to claim 1, wherein a film thickness of the second area of the mounting pad is larger than a film thickness of the first area.
請求項1または2に記載の半導体発光装置であって、
前記実装パッドは、前記第二の領域は膜厚が、前記第一の領域の膜厚よりも薄いことを特徴とする半導体発光装置。
A semiconductor light emitting device according to claim 1 or 2, wherein
The semiconductor light emitting device according to claim 1, wherein a film thickness of the second region of the mounting pad is smaller than a film thickness of the first region.
請求項1または2に記載の半導体発光装置であって、
前記実装パッドは、前記第一の領域の外周と、前記第二の領域との境界との間に、前記金属膜が形成されていないスリット部または溝部を有することを特徴とする半導体発光装置。
A semiconductor light emitting device according to claim 1 or 2, wherein
The semiconductor light emitting device according to claim 1, wherein the mounting pad has a slit portion or a groove portion in which the metal film is not formed between an outer periphery of the first region and a boundary between the second region.
請求項1に記載の半導体発光装置であって、
前記第二の領域の内側に前記接合材は設けられ、
前記半導体発光素子は前記第二の領域の外周と同じかそれより小さいことを特徴とする半導体発光装置。
The semiconductor light emitting device according to claim 1, wherein
The bonding material is provided inside the second region,
The semiconductor light emitting device, wherein the semiconductor light emitting element is equal to or smaller than an outer periphery of the second region.
請求項1に記載の半導体発光装置であって、
前記第一の領域および前記第二の領域まで広がるように前記接合材は設けられ、
前記半導体発光素子は前記第二の領域の外周より大きく前記第一の領域の外周と同じかそれより小さいことを特徴とする半導体発光装置。
The semiconductor light emitting device according to claim 1, wherein
The bonding material is provided to extend to the first area and the second area,
The semiconductor light emitting device, wherein the semiconductor light emitting element is larger than an outer periphery of the second region and equal to or smaller than an outer periphery of the first region.
大きさが異なる複数の半導体発光素子のいずれかを接合するための金属膜からなる実装パッドが形成された汎用実装基板であって、
前記実装パッドは、第一の領域と、当該第一の領域に内側に位置する第二の領域と、を有し、前記第一の領域と前記第二の領域との境界において、前記実装パッドの厚み方向に段差を有し、
前記第二の領域の外周は、前記複数の発光素子のうち最大の発光素子の外周より小さく且つ二番目に大きい発光素子の外周と同じ大きさであるか、それより大きいことを特徴とする汎用実装基板。
A general-purpose mounting substrate having a mounting pad formed of a metal film for bonding any of a plurality of semiconductor light emitting elements having different sizes,
The mounting pad has a first region and a second region located inside the first region, and at the boundary between the first region and the second region, the mounting pad Have a step in the thickness direction of the
The outer periphery of the second region is the same size as or larger than the outer periphery of the second largest light emitting element smaller than the outer periphery of the largest light emitting element among the plurality of light emitting elements. Mounting board.
表面に実装パッドが形成された実装基板の前記実装パッドに、半導体発光素子を接合材により接合して、半導体発光装置を製造する方法であって、
前記実装基板として、請求項8に記載された汎用実装基板を用意するステップと、
前記実装パッドの前記第二の領域のみに前記接合材を供給し、外周が前記第二の領域の外周と同じかそれより小さい半導体発光素子を、前記実装パッドに載せるステップと、
接合材により前記半導体発光素子と前記実装パッドとを接合するステップと、を含む半導体発光装置の製造方法。
A semiconductor light emitting device is manufactured by bonding a semiconductor light emitting element to a mounting material of a mounting substrate having a mounting pad formed on the surface, using a bonding material.
Preparing the general-purpose mounting board according to claim 8 as the mounting board;
Supplying the bonding material only to the second region of the mounting pad, and placing a semiconductor light emitting element whose outer periphery is the same as or smaller than the outer periphery of the second region on the mounting pad;
Bonding the semiconductor light emitting element and the mounting pad with a bonding material.
表面に実装パッドが形成された実装基板の前記実装パッドに、半導体発光素子を接合材により接合して、半導体発光装置を製造する方法であって、
前記実装基板として、請求項8に記載された汎用実装基板を用意するステップと、
前記実装パッドの前記第二の領域に前記接合材を供給し、外周が前記第一の領域の外周と同じかそれより小さく且つ前記第二の領域の外周より大きい半導体発光素子を、前記実装パッドに載せるステップと、
接合材により前記半導体発光素子と前記実装パッドとを接合するステップと、を含む半導体発光装置の製造方法。

A semiconductor light emitting device is manufactured by bonding a semiconductor light emitting element to a mounting material of a mounting substrate having a mounting pad formed on the surface, using a bonding material.
Preparing the general-purpose mounting board according to claim 8 as the mounting board;
The mounting pad is supplied with the bonding material to the second region of the mounting pad, and the semiconductor light emitting element whose outer periphery is smaller than or equal to the outer periphery of the first region and larger than the outer periphery of the second region Steps to put on
Bonding the semiconductor light emitting element and the mounting pad with a bonding material.

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