JP2006080141A - Luminescent device, leadframe used therefor and manufacturing method of leadframe - Google Patents

Luminescent device, leadframe used therefor and manufacturing method of leadframe Download PDF

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JP2006080141A
JP2006080141A JP2004259716A JP2004259716A JP2006080141A JP 2006080141 A JP2006080141 A JP 2006080141A JP 2004259716 A JP2004259716 A JP 2004259716A JP 2004259716 A JP2004259716 A JP 2004259716A JP 2006080141 A JP2006080141 A JP 2006080141A
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light emitting
lead frame
emitting element
mounting portion
emitting device
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JP4486451B2 (en
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Masaru Aoki
大 青木
Kazunobu Sumi
和宜 角
Toshikatsu Hiroe
俊勝 広江
Toshiaki Morikawa
利明 森川
Atsushi Otaka
篤 大高
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Stanley Electric Co Ltd
SH Precision Co Ltd
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Stanley Electric Co Ltd
SH Precision Co Ltd
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface-mounting luminescent device which aims at the prevention of a short circuit accident and the improvement in the mounting reliability by preventing the adhesive bond from wraparound to a light emitting device, to provide a leadframe used for the luminescent device, and to provide the manufacturing method of the leadframe. <P>SOLUTION: The light luminescent device 1 is provided with a light emitting device 11; a first leadframe 13 for electrically connecting to the first electrode of the light emitting device 11; a second leadframe 14 for electrically connecting to the second electrode of the light emitting device 11; and an insulating body 16 for sealing the light emitting device 11, the connection part of the first electrode of the light emitting device 11 and the first leadframe 13, and the connection part of the second electrode of the light emitting device 11 and the second leadframe 14. It is a surface-mounting luminescent device wherein the connecting terminal for connecting to external devices of the first leadframe 13 and the second leadframe 14 is exposed to the outside of the insulating body 16 and made into a package. In the first leadframe 13 having one or a plurality of mounting section 13A with a flat top face formed in the convex shape of the same height, the light emitting device 11 is pasted up on the upper face 13a of the mounting part 13A. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、発光装置及びその製造方法、ならびに発光装置の製造に使用するリードフレームに関し、特に発光ダイオード（ＬＥＤ）の等の発光素子を用いた表面実装型の発光装置に適用される有効な技術に関するものである。   The present invention relates to a light-emitting device, a method for manufacturing the same, and a lead frame used for manufacturing the light-emitting device, and in particular, an effective technique applied to a surface-mounted light-emitting device using a light-emitting element such as a light-emitting diode (LED). It is about.

従来、発光ダイオード等の発光素子を用いた発光装置には、第１リードフレーム及び第２リードフレームを、実装基板のスルーホールに挿入して半田付けする挿入実装型とともに、前記実装基板の表面に設けられたパッド（端子）に半田付けする表面実装型がある。   Conventionally, in a light-emitting device using a light-emitting element such as a light-emitting diode, a first lead frame and a second lead frame are inserted into a through-hole of the mounting substrate and soldered together with an insertion mounting type on the surface of the mounting substrate. There is a surface mount type that solders to a provided pad (terminal).

本発明は、後者である表面実装型の範疇の発光装置等に関するものであるが、従来の表面実装型の発光装置のリードフレームは一般的に平板体であり、発光素子を装着するリードフレームの実装部もその平板体の一部であるため、発光素子を実装部に装着する際、半田等の合金層が発光素子の側面や表層面にまで回り込んでしまうという現象が生じていた。そのため、パッケージ化した発光装置の電気回路に短絡現象が生じ、発光素子の発光機能が損なわれてしまうという問題が生じていた。   The present invention relates to the latter type of light emitting device of the surface mount type, etc., but the lead frame of the conventional surface mount type light emitting device is generally a flat body, and the lead frame of the light emitting element is mounted. Since the mounting part is also a part of the flat body, when the light emitting element is mounted on the mounting part, a phenomenon that an alloy layer such as solder wraps around the side surface or the surface layer of the light emitting element has occurred. For this reason, a short circuit phenomenon occurs in the electric circuit of the packaged light emitting device, and the light emitting function of the light emitting element is impaired.

図７は、従来の表面実装型の発光装置を示す。この発光装置は、平板状のリードフレームの一部をカップ状の底部Ｂとしてその個所に発光素子３１を接着させてなるものである（特許文献１参照）。この発光装置３０では、第１リードフレーム３３の第２リードフレーム３４側寄りに周囲を下方に向けて円錐状に傾斜させたカップ状の中心に平坦状の底部Ｂを発光素子３１の反射板Ｌとし、底部Ｂに発光素子３１を半田３７を用いて接合させるようになっている。このようにすることによって、発光素子３１を動作させたときに発生する熱を、底部Ｂを介して発光装置の外部に放熱することができ、発光効率の安定化を図ることができる。また、反射板Ｌが発光機能を効果的なものとすることができる。   FIG. 7 shows a conventional surface mount type light emitting device. In this light emitting device, a part of a flat lead frame is used as a cup-shaped bottom portion B, and a light emitting element 31 is adhered to the portion (see Patent Document 1). In the light emitting device 30, the flat bottom B is formed at the center of the cup shape in which the periphery is inclined downwardly toward the second lead frame 34 side of the first lead frame 33, and the reflecting plate L of the light emitting element 31. The light emitting element 31 is joined to the bottom B using solder 37. By doing so, heat generated when the light emitting element 31 is operated can be radiated to the outside of the light emitting device via the bottom B, and the light emission efficiency can be stabilized. Further, the reflecting plate L can make the light emitting function effective.

この発光装置３０は、平板状の第１及び第２のリードフレーム３３を有し、第１リードフレーム３３の底部Ｂに発光素子３１の一方の電極を半田３７によって接続し、発光素子３１の他方の電極をボンディングワイヤ３５によって第２リードフレーム３４に接続している。発光素子３１及びボンディングワイヤ３５等は、封止用絶縁体３６によって封止される。
特開２００３−１７４２００号公報 The light emitting device 30 has first and second flat lead frames 33, one electrode of the light emitting element 31 is connected to the bottom B of the first lead frame 33 by a solder 37, and the other of the light emitting elements 31 is connected. These electrodes are connected to the second lead frame 34 by bonding wires 35. The light emitting element 31, the bonding wire 35, and the like are sealed with a sealing insulator.
JP 2003-174200 A

しかしながら、この表面実装型の発光装置３０によれば、第１リードフレーム３３におけるカップ状面の底部Ｂは平面であるため、半田３７が発光素子３１の側面や表層部への回り込む可能性があり、上述した短絡等の問題が生ずる恐れがある。   However, according to the surface mount type light emitting device 30, the bottom B of the cup-shaped surface of the first lead frame 33 is a flat surface, and thus the solder 37 may wrap around the side surface or the surface layer of the light emitting element 31. There is a risk that the above-mentioned problems such as short circuit may occur.

従って、本発明の目的は、かかる問題を可及的に解消し、発光素子への導電性接着剤等（半田等）の回り込みを防止することによって短絡事故を未然に防止し、発光素子の実装の信頼性の向上を図る表面実装型の発光装置及びその製造方法、ならびに発光装置の製造に使用するリードフレームを提供することにある。   Therefore, an object of the present invention is to eliminate such a problem as much as possible and prevent a short circuit accident by preventing the conductive adhesive or the like (solder etc.) from wrapping around the light emitting element. It is an object of the present invention to provide a surface mount type light emitting device and a method for manufacturing the same, and a lead frame used for manufacturing the light emitting device.

上記の目的を達成するため、本発明に係る発光装置は、発光素子と、前記発光素子の第１電極と電気的に接続する第１リードフレームと、前記発光素子の第２電極と電気的に接続する第２リードフレームと、前記発光素子、前記発光素子の第１電極と第１リードフレームの接続部、及び前記発光素子の第２電極と第２リードフレームの接続部を封止する絶縁体とからなる表面実装型の発光装置であって、第１リードフレームには、上面は平坦とし、接続部側に１又は同一高さの複数の凸状で裏面側において凹状形状の実装部が形成され、前記実装部の前記上面に前記発光素子を接着させたこと特徴とする。   In order to achieve the above object, a light emitting device according to the present invention includes a light emitting element, a first lead frame electrically connected to the first electrode of the light emitting element, and a second electrode of the light emitting element. A second lead frame to be connected, the light emitting element, a connecting portion between the first electrode and the first lead frame of the light emitting element, and an insulator for sealing the connecting portion between the second electrode of the light emitting element and the second lead frame The first lead frame has a flat top surface, and one or a plurality of convex shapes of the same height are formed on the connection portion side, and a concave mounting portion is formed on the back surface side. The light emitting element is bonded to the upper surface of the mounting portion.

この場合、前記実装部の高さは、０．０１〜０．１５ｍｍであることが好ましい。   In this case, the height of the mounting portion is preferably 0.01 to 0.15 mm.

また、前記実装部の前記上面の面積は、前記発光素子の面積と同等又はそれより小さく形成されていることが好ましい。   The area of the upper surface of the mounting portion is preferably formed to be equal to or smaller than the area of the light emitting element.

この発光装置に使用するリードフレームは、発光素子の第１電極及び第２電極に接続される第１リードフレーム及び第２リードフレームを設け、第１リードフレームには１又は同一高さの複数の凸状に形成されて、発光素子を載置するための上面が平坦な実装部が形成されていることを特徴とする。   The lead frame used in the light emitting device includes a first lead frame and a second lead frame connected to the first electrode and the second electrode of the light emitting element, and the first lead frame has one or a plurality of the same height. A mounting portion that is formed in a convex shape and has a flat upper surface for mounting the light emitting element is formed.

この場合、前記実装部の高さは、０．０１〜０．１５ｍｍであることが好ましい。   In this case, the height of the mounting portion is preferably 0.01 to 0.15 mm.

また、 前記実装部の前記上面部の面積は、発光素子の面積と同等又はそれより小さく形成されていることが好ましい。   Moreover, it is preferable that the area of the upper surface part of the mounting part is formed to be equal to or smaller than the area of the light emitting element.

さらに、前記第１リードフレームは、所定位置に１又は同一高さの複数の上面が平坦な凸条をあらかじめ有する導体板によって構成されることが好ましい。   Furthermore, it is preferable that the first lead frame is composed of a conductor plate having a plurality of protrusions having a flat top surface at a predetermined position and one or the same height.

リードフレームの製造方法は、薄板の導体板を用意するステップと、前記導体板を打ち抜いて第１及び第２のリードフレームを形成するステップと、前記第１リードフレームを半抜きにして平坦状の上面を有する半導体装置用実装部を形成するステップを有することを特徴とする。   The lead frame manufacturing method includes a step of preparing a thin conductor plate, a step of punching the conductor plate to form first and second lead frames, and a half-cut of the first lead frame. A step of forming a mounting portion for a semiconductor device having an upper surface is provided.

この場合、前記半導体装置用実装部を形成するステップは、前記第１リードフレームを半抜きにした後、逆方向から押圧してその高さを調整するステップを含むことが好ましい。   In this case, it is preferable that the step of forming the semiconductor device mounting portion includes a step of adjusting the height by pressing the first lead frame halfway and then pressing it in the reverse direction.

本発明によれば、発光素子の実装部は極めて簡単な構造でありながら、的確に発光素子への半田等の接着剤の回り込みを阻止することによって短絡事故の防止と実装の信頼性の向上を図ることができる。また、前記実装部の前記上面を平坦状とすることにより、発光素子を確実に前記実装部にマウントすることができる。さらに実装部の面積は、前記発光素子の装着面の面積と同等かそれよりも小さくすることによって、一層発光素子への接着剤の回り込みを阻止することができる。また、前記第１リードフレームは接続部側において凸状で裏面側において凹状の形状としているのでリードフレームの表面積が増加して放熱性が向上する。   According to the present invention, the mounting portion of the light-emitting element has a very simple structure, but prevents the occurrence of short-circuit accidents and improves the mounting reliability by accurately preventing the adhesive such as solder from wrapping around the light-emitting element. Can be planned. In addition, by making the upper surface of the mounting portion flat, the light emitting element can be reliably mounted on the mounting portion. Further, by making the area of the mounting portion equal to or smaller than the area of the mounting surface of the light emitting element, it is possible to further prevent the adhesive from entering the light emitting element. In addition, since the first lead frame has a convex shape on the connection portion side and a concave shape on the back surface side, the surface area of the lead frame is increased and heat dissipation is improved.

また、本発明の発光装置の製造方法によれば、順送トランスファー加工のみならず歩留まりを一層高めるクランクプレスによる加工が可能であり、さらに第１リードフレーム及び第２リードフレームの同時形成を行うこともできる。また、前記の同時形成と同時に第１リードフレームに発光素子を接着する実装部を形成させることもできる。   In addition, according to the method for manufacturing a light emitting device of the present invention, not only progressive transfer processing but also processing by a crank press that further increases the yield is possible, and the first lead frame and the second lead frame are simultaneously formed. You can also. In addition, a mounting portion for adhering the light emitting element to the first lead frame can be formed simultaneously with the simultaneous formation.

さらに、本発明の発光装置の製造に使用するリードフレームによれば、第１リードフレームに設けた光素子を接着する実装部は周囲のリードフレーム面より高い凸部を形成させた部位とするから、発光素子への半田等の接着剤の回り込みを確実に防止することができる。   Furthermore, according to the lead frame used for manufacturing the light emitting device of the present invention, the mounting portion for bonding the optical element provided on the first lead frame is a portion where a convex portion higher than the surrounding lead frame surface is formed. Thus, it is possible to reliably prevent the adhesive such as solder from wrapping around the light emitting element.

以下、本発明の実施をするための最良の形態を、図１〜図５を用いて説明する。   Hereinafter, the best mode for carrying out the present invention will be described with reference to FIGS.

図１は、本発明の発光装置の断面概要図である。発光装置１は、発光素子１１と、前記発光素子１１のチップ下面１１ａに設けた第１電極と電気的に接続する第１リードフレーム１３と、前記発光素子１１のチップ上面１１ｂに設けた第２電極と電気的に接続する第２リードフレーム１４と、前記発光素子１１の第２電極と第２リードフレーム１４の接続部とを接続するボンディングワイヤ１５、及び前記発光素子１１及び接続部を含んだ周囲を封止するエポキシ樹脂からなる封止用絶縁体１６とからなり、前記第１リードフレーム１３及び第２リードフレーム１４の外部装置との接続端子部１３ａ、１４ａを前記封止用絶縁体１６の外部に露出してパッケージ化したものであって、第１リードフレーム１３には、前記発光素子１１を接着させて実装させるための１又は同一高さの複数の凸部（以下、実装部という。）１３Ａを形成させ、前記発光素子１１の下側となるチップ下面１１ａを前記実装部１３Ａの上面１３ｂ低融点接続が可能な共晶半田１７によって接着させてある。   FIG. 1 is a schematic cross-sectional view of a light emitting device of the present invention. The light emitting device 1 includes a light emitting element 11, a first lead frame 13 electrically connected to a first electrode provided on the chip lower surface 11 a of the light emitting element 11, and a second lead provided on the chip upper surface 11 b of the light emitting element 11. A second lead frame 14 electrically connected to the electrode; a bonding wire 15 connecting the second electrode of the light emitting element 11 and a connecting portion of the second lead frame 14; and the light emitting element 11 and the connecting portion. The sealing insulator 16 is made of an epoxy resin that seals the periphery, and the connection terminal portions 13a and 14a of the first lead frame 13 and the second lead frame 14 to external devices are connected to the sealing insulator 16. The first lead frame 13 has a plurality of protrusions having one or the same height for bonding and mounting the light emitting element 11 on the first lead frame 13. (Hereinafter, referred to as mounting part.) 13A is formed, it is to adhere the chip lower surface 11a serving as the lower side of the light emitting element 11 by the upper surface 13b low melting access for eutectic solder 17 of the mounting portion 13A.

発光素子１１は、図示しない基板上にｎ型半導体層及びｐ型半導体層が積層されることにより発光層が形成され、その上面に第2電極としてのｐ側電極及び基板の下側に第１電極としてのｎ側電極が形成されている。   In the light emitting element 11, a light emitting layer is formed by laminating an n-type semiconductor layer and a p-type semiconductor layer on a substrate (not shown), and a p-side electrode as a second electrode is formed on the upper surface of the light-emitting element 11 and a first electrode is formed on the lower side of the substrate. An n-side electrode as an electrode is formed.

図２は、本発明の発光装置の他の実施例の断面概要図である。発光装置１は、実装部１３Ａが２つの凸状で形成されているほか、図１の発光装置１と同一の構造であり、同一の部分には同一の引用文字を使用したので、構成説明は省略する。   FIG. 2 is a schematic cross-sectional view of another embodiment of the light emitting device of the present invention. The light emitting device 1 has a mounting portion 13A formed in two convex shapes, and has the same structure as the light emitting device 1 of FIG. 1, and the same reference characters are used for the same portions. Omitted.

図３は、第１リードフレーム１３であって、同図（ａ）は、実装部１３Ａが１つの凸状で形成されている場合、同図（ｂ）は実装部１３Ａが２つの凸状で形成されて場合である。同図（ａ）によれば、実装部１３Ａの上面１３ａには、共晶半田１７が塗布ないし滴下される。さらに共晶半田１７を挟むようにその上に発光素子１１が実装部１３Ａの上面１３ａに接着される。この場合、実装部１３Ａの上面１３ａの面積は、発光素子１１のチップ下面１１ａの面積と同等かそれよりも小さく形成されるようにする。また、実装部１３Ａの高さは、０．０１〜０．１５ｍｍとする。同様に、同図（ｂ）によれば、実装部１３Ａの上面１３ａには、共晶半田１７が塗布ないし滴下される。さらに共晶半田１７を挟むようにその上に発光素子１１が実装部１３Ａの上面１３ａに接着される。この場合、実装部１３Ａの上面１３ａの面積は、発光素子１１のチップ下面１１ａの面積と同等かそれよりも小さく形成されるようにする。また、実装部１３Ａの高さは、０．０１〜０．１５ｍｍとする。   FIG. 3 shows the first lead frame 13. FIG. 3A shows a case where the mounting portion 13A is formed with one convex shape, and FIG. 3B shows a case where the mounting portion 13A has two convex shapes. This is the case. According to FIG. 5A, eutectic solder 17 is applied or dropped on the upper surface 13a of the mounting portion 13A. Further, the light emitting element 11 is bonded to the upper surface 13a of the mounting portion 13A so as to sandwich the eutectic solder 17 therebetween. In this case, the area of the upper surface 13a of the mounting portion 13A is formed to be equal to or smaller than the area of the chip lower surface 11a of the light emitting element 11. Further, the height of the mounting portion 13A is set to 0.01 to 0.15 mm. Similarly, according to FIG. 2B, eutectic solder 17 is applied or dropped onto the upper surface 13a of the mounting portion 13A. Further, the light emitting element 11 is bonded to the upper surface 13a of the mounting portion 13A so as to sandwich the eutectic solder 17 therebetween. In this case, the area of the upper surface 13a of the mounting portion 13A is formed to be equal to or smaller than the area of the chip lower surface 11a of the light emitting element 11. Further, the height of the mounting portion 13A is set to 0.01 to 0.15 mm.

このような実装部１３Ａを備えた第１リードフレーム１３は、共晶半田１７を介して発光素子１１を実装部１３Ａに接着する場合、共晶半田１７が発光素子１１のチップ側面１１ｃやチップ上面１１ｂに這い上がることを防止できる。その効果は、図１（図３（ａ））より図２（図３（ｂ））の方が大きい。以上の実施の形態では、半導体発光素子の実装部への接着に、共晶半田を用いたが、これに限定されるものではなく、Ａｇペースト等の導電性接着剤等であってもよい。   In the first lead frame 13 provided with such a mounting portion 13A, when the light emitting element 11 is bonded to the mounting portion 13A via the eutectic solder 17, the eutectic solder 17 is attached to the chip side surface 11c or the chip upper surface of the light emitting element 11. It is possible to prevent climbing to 11b. The effect is greater in FIG. 2 (FIG. 3B) than in FIG. 1 (FIG. 3A). In the above embodiment, eutectic solder is used for bonding the semiconductor light emitting element to the mounting portion, but the present invention is not limited to this, and a conductive adhesive such as Ag paste may be used.

また、第１リードフレームの凸部状に形成された実装部１３ａの上面に複数の溝を形成するものであってもよい。この場合、実装部１３ａの上面には、図４（ａ）（ｂ）に示すように、リードフレームの幅方向に延びる溝２８からなる格子状の溝（メッシュ形状の溝）が設けられる。
凸部に形成された実装部１３ａの上面に溝を形成することにより、余剰に半田等の接着剤が実装面に供給された場合でも、接着材の回り込みを防止する効果があり、更に実装時に生じる応用力も緩和する作用がある。
なお、この第１リードフレームの凸部上面に形成される溝の深さは３〜２０μｍであり、溝のピッチは０．０４〜０．２ｍｍであることが好ましい。 Further, a plurality of grooves may be formed on the upper surface of the mounting portion 13a formed in the convex shape of the first lead frame. In this case, as shown in FIGS. 4A and 4B, a lattice-like groove (mesh-shaped groove) including grooves 28 extending in the width direction of the lead frame is provided on the upper surface of the mounting portion 13a.
By forming a groove on the upper surface of the mounting portion 13a formed on the convex portion, even when excessive adhesive such as solder is supplied to the mounting surface, there is an effect of preventing the adhesive material from wrapping around. The applied force that occurs is also mitigated.
In addition, it is preferable that the depth of the groove | channel formed in the convex part upper surface of this 1st lead frame is 3-20 micrometers, and the pitch of a groove | channel is 0.04-0.2 mm.

図５は、第１リードフレーム１３及び第２リードフレーム１４の成形方法を示す概要図である。同図（ａ）は、加工前の概要図、同図（ｂ）は、加工姿勢の概要図、同図（ｃ）は加工終了時の概要図、同図（ｄ）は、実装部１３Ａの高さを微調整する加工の概要図を示す。第１リードフレーム１３及び第２リードフレーム１４は、Ｃｕ等からなる平坦状の薄板である導体板１２を素材として製造される（ａ）。ダイスＤ１、Ｄ２上に載置された導体板１２は、パンチＰがダイスＤ１、Ｄ２の方向に下動し導体板１２を加圧する（ｂ）。パンチＰがさらに下降し、導体板１２を半抜き状態の位置を下死点として反転上昇させる（ｃ）。この一連の動作によって、１つの実装部１３Ａが下向きに形成される。図４（ｄ）は、半抜きによって形成された実装部１３Ａを下からプレス金型ＰＭによって押圧することによって実装部１３Ａの高さを微調整する加工工程を示す。   FIG. 5 is a schematic view showing a method for forming the first lead frame 13 and the second lead frame 14. (A) is a schematic diagram before processing, FIG. (B) is a schematic diagram of a processing posture, (c) is a schematic diagram at the end of processing, and (d) is a diagram of the mounting portion 13A. The outline figure of processing which adjusts height finely is shown. The first lead frame 13 and the second lead frame 14 are manufactured using the conductor plate 12 which is a flat thin plate made of Cu or the like as a material (a). In the conductor plate 12 placed on the dies D1 and D2, the punch P moves downward in the direction of the dies D1 and D2, and pressurizes the conductor plate 12 (b). The punch P is further lowered, and the conductor plate 12 is reversed and raised with the position of the half-drawn state as the bottom dead center (c). By this series of operations, one mounting portion 13A is formed downward. FIG. 4D shows a processing step for finely adjusting the height of the mounting portion 13A by pressing the mounting portion 13A formed by half punching with a press mold PM from below.

図６は、複数の実装部１３Ａ（１つのみ図示）をあらかじめ所定間隔を存して形成した導体板１２を用いて、第１リードフレーム１３及び第２リードフレーム１４の成形方法を示す概要図である。同図（ａ）は、加工前の概要図、同図（ｂ）は、加工姿勢の概要図、同図（ｃ）は加工終了時の概要図を示す。ダイスＤ１、Ｄ２上に載置された導体板１２は、パンチＰがダイスＤ１、Ｄ２の方向に下降し導体板１２を加圧する。パンチＰがさらに下降し、導体板１２を抜き状態の位置を下死点として反転上昇させる。この一連の動作によって、実装部１３Ａを有する第１リードフレーム１３と平板状の第２リードフレーム１４を同時に製造することができる。図５及び図６において、導体板１２は、枠状の金属フレームに多数並列的に支持されていることが好ましいが、図示上省略してある。   FIG. 6 is a schematic diagram showing a method of forming the first lead frame 13 and the second lead frame 14 using the conductor plate 12 in which a plurality of mounting portions 13A (only one is shown) are formed in advance at predetermined intervals. It is. FIG. 4A is a schematic diagram before machining, FIG. 4B is a schematic diagram of a machining posture, and FIG. 4C is a schematic diagram at the end of machining. In the conductor plate 12 placed on the dies D1 and D2, the punch P descends in the direction of the dies D1 and D2, and pressurizes the conductor plate 12. The punch P further descends and reverses and rises with the position where the conductor plate 12 is removed as the bottom dead center. By this series of operations, the first lead frame 13 having the mounting portion 13A and the flat second lead frame 14 can be manufactured at the same time. 5 and 6, a large number of conductor plates 12 are preferably supported in parallel by a frame-like metal frame, but are omitted from the drawing.

次に、本発明の発光装置１の製造方法を手順を追って説明する。発光装置２０の製造手順も略同様である。   Next, the manufacturing method of the light emitting device 1 according to the present invention will be described step by step. The manufacturing procedure of the light emitting device 20 is substantially the same.

手順１：第１リードフレーム１３の実装部１３Ａの形成。導体板１２を前記したプレス成形加工によって第１リードフレーム１２及び第２リードフレーム１４の一対のリードフレームを成形する。   Procedure 1: Formation of the mounting portion 13A of the first lead frame 13. A pair of lead frames of the first lead frame 12 and the second lead frame 14 is formed on the conductor plate 12 by the press forming process described above.

手順２：実装部１３Ａの上面１３ａへの共晶半田１７の塗布（又は滴下）。   Procedure 2: Eutectic solder 17 is applied (or dropped) on the upper surface 13a of the mounting portion 13A.

手順３：発光素子１１の実装部１３Ａへの装着。   Procedure 3: Attaching the light emitting element 11 to the mounting portion 13A.

手順４：ボンディングワイヤの配線。チップ上面１１ｂのｐ側電極と第２リードフレーム１４とを結線する。   Procedure 4: Wire bonding wires. The p-side electrode on the chip upper surface 11b and the second lead frame 14 are connected.

手順５：樹脂コーティング。発光素子１１、第１リードフレーム１３、第２リードフレーム１４及びボンディングワイヤ１５をエポキシ樹脂からなる封止用絶縁体１６で封止する。   Procedure 5: Resin coating. The light emitting element 11, the first lead frame 13, the second lead frame 14, and the bonding wire 15 are sealed with a sealing insulator 16 made of epoxy resin.

以上の手順により、第２リードフレーム１４をプラスの電極側、第１リードフレーム１３をマイナスの電極側として通電させると、電流はボンディングワイヤ１５を経由して第２リードフレーム１４から第１リードフレーム１３に流れる。このとき発光素子１１は、半田１７の回り込み現象による短絡は阻止されているから、ｎ型半導体層からｐ型半導体層方向に電子が流れ、発光層から発光する。   According to the above procedure, when the second lead frame 14 is energized with the positive electrode side and the first lead frame 13 with the negative electrode side, current flows from the second lead frame 14 to the first lead frame via the bonding wire 15. 13 flows. At this time, since the light emitting element 11 is prevented from being short-circuited due to the wraparound phenomenon of the solder 17, electrons flow from the n-type semiconductor layer to the p-type semiconductor layer and emit light from the light emitting layer.

以上、本発明に係る発光装置よれば、発光素子の実装部は極めて簡単な構造でありながら、的確に発光素子への半田等の導電性接着剤の回り込みを阻止することによって短絡事故の防止と実装の信頼性の向上を図ることができる。また、前記実装部の前記上面を平坦状とすることにより、発光素子を確実に前記実装部にマウントすることができる。さらに実装部の面積は、前記発光素子の装着面の面積と同等かそれよりも小さくすることによって、一層発光素子への接着剤の回り込みを阻止することができる。   As described above, according to the light emitting device according to the present invention, the mounting portion of the light emitting element has a very simple structure, and by preventing the conductive adhesive such as solder from wrapping around the light emitting element, the short circuit accident can be prevented. The mounting reliability can be improved. In addition, by making the upper surface of the mounting portion flat, the light emitting element can be reliably mounted on the mounting portion. Further, by making the area of the mounting portion equal to or smaller than the area of the mounting surface of the light emitting element, it is possible to further prevent the adhesive from entering the light emitting element.

また、本発明の発光装置の製造方法によれば、順送トランスファー加工のみならず歩
留まりを一層高めるクランクプレスによる加工が可能であり、さらに第１リードフレーム及び第２リードフレームの同時形成を行うこともできる。また、前記の同時形成と同時に第１リードフレームに発光素子を接着する実装部を形成させることもできる。また、順送トランスファー装置によるほか、ブレーキプレスやターレットパンチプレス等の装置による製造も容易に可能である。導体板１２が極めて薄い導電性の板であるから、実装部自体の加工のみならず、リードフレームのプレス加工も容易だからである In addition, according to the method for manufacturing a light emitting device of the present invention, not only progressive transfer processing but also processing by a crank press that further increases the yield is possible, and the first lead frame and the second lead frame are simultaneously formed. You can also. In addition, a mounting portion for adhering the light emitting element to the first lead frame can be formed simultaneously with the simultaneous formation. In addition to the progressive transfer device, it can be easily manufactured by a device such as a brake press or a turret punch press. This is because the conductor plate 12 is an extremely thin conductive plate, so that not only the mounting portion itself but also the lead frame can be easily pressed.

さらに、本発明の発光装置の製造に使用するリードフレームによれば、第１リードフレームに設けた発光素子を接着する実装部は周囲のリードフレーム面より高い凸部を形成させた部位とするから、発光素子への半田等の接着剤の回り込みを確実に防止することができる。   Furthermore, according to the lead frame used for manufacturing the light emitting device of the present invention, the mounting portion for bonding the light emitting element provided on the first lead frame is a portion where a convex portion higher than the surrounding lead frame surface is formed. Thus, it is possible to reliably prevent the adhesive such as solder from wrapping around the light emitting element.

さらに、前記した手順５の樹脂コーティングにおいて、エポキシ樹脂からなる封止用絶縁体１６で封止する際に、第１リードフレームおよび第２リードフレームの裏面側まで覆って、図２に点線で示す下部絶縁体１６Aを形成することもできる。下部絶縁体１６Aを形成した場合にはリードフレームを樹脂で覆うので、前記した実施の形態に比べて放熱性に劣るが封止用絶縁体とリードフレームの接着性が向上し両者の剥離が減少する。特にリードフレーム裏面が凹状となっているので封止用絶縁体との接着性に優れている。   Furthermore, in the resin coating in the above-described procedure 5, when sealing with the sealing insulator 16 made of epoxy resin, the back surface side of the first lead frame and the second lead frame is covered and shown by a dotted line in FIG. The lower insulator 16A can also be formed. When the lower insulator 16A is formed, the lead frame is covered with resin, so that the heat dissipation is inferior to that of the above-described embodiment, but the adhesion between the sealing insulator and the lead frame is improved and the peeling between the two is reduced. To do. In particular, since the back surface of the lead frame is concave, it has excellent adhesion to the sealing insulator.

本発明の発光装置の一実施例の断面概要図である。It is a cross-sectional schematic diagram of one Example of the light-emitting device of this invention. 本発明の発光装置の他の実施例の断面概要図である。It is a cross-sectional schematic diagram of the other Example of the light-emitting device of this invention. 第１リードフレームの構造を示し、（ａ）は、１つの凸状で形成される実装部を有する第１リードフレームである。（ｂ）は、２つ（複数）の凸状で形成される実装部を有する第１リードフレームである。The structure of a 1st lead frame is shown, (a) is a 1st lead frame which has the mounting part formed in one convex shape. (B) is a first lead frame having a mounting portion formed in two (plural) convex shapes. （ａ）は、第１リードフレームの表面に形成された溝形状を説明するためのリードフレームの部分正面図であり、（ｂ）は、第１リードフレームの表面に形成された溝形状を説明するためのリードフレームの部分断面図である。(A) is a partial front view of the lead frame for explaining the groove shape formed on the surface of the first lead frame, and (b) shows the groove shape formed on the surface of the first lead frame. It is a fragmentary sectional view of the lead frame for doing. リードフレームの製造方法の概要図であって、（ａ）は、加工前の概要図である。（ｂ）は、加工姿勢の概要図である。（ｃ）は、加工終了時の概要図である。（ｄ）は、実装部の高さを微調整する加工工程の概要図である。It is a schematic diagram of a manufacturing method of a lead frame, and (a) is a schematic diagram before processing. (B) is a schematic diagram of a processing posture. (C) is a schematic diagram at the end of processing. (D) is a schematic diagram of a processing step for finely adjusting the height of the mounting portion. 実装部をあらかじめ所定間隔を存してマウントした導体板を用いて、リードフレームの製造方法の概要図であって、（ａ）は、加工前の概要図である。（ｂ）は、加工姿勢の概要図である。（ｃ）は、加工終了時の概要図である。It is a schematic diagram of the manufacturing method of a lead frame using the conductor board which mounted the mounting part beforehand at predetermined intervals, and (a) is a schematic diagram before processing. (B) is a schematic diagram of a processing posture. (C) is a schematic diagram at the end of processing. 従来の表面実装型の発光装置の実施例図である。It is an Example figure of the conventional surface mount type light-emitting device.

符号の説明Explanation of symbols

１，３０ 発光装置
１１ ，３１ 発光素子
１２ 導体板
１３，３３ 第１リードフレーム
１３Ａ，Ｂ 実装部
１４，３４ 第２リードフレーム
１５，３５ ボンディングワイヤ
１６，３６ 封止用絶縁体
１７，３７ 半田 DESCRIPTION OF SYMBOLS 1,30 Light-emitting device 11, 31 Light-emitting element 12 Conductor board 13, 33 1st lead frame 13A, B Mounting part 14, 34 2nd lead frame 15, 35 Bonding wire 16, 36 Sealing insulator 17, 37 Solder

Claims (9)

発光素子と、前記発光素子の第１電極と電気的に接続する第１リードフレームと、前記発光素子の第２電極と電気的に接続する第２リードフレームと、前記発光素子、前記発光素子の第１電極と第１リードフレームの接続部、及び前記発光素子の第２電極と第２リードフレームの接続部を封止する絶縁体とからなる表面実装型の発光装置であって、第１リードフレームには、上面は平坦とし、接続部側に１又は同一高さの複数の凸状で裏面側において凹状形状の実装部が形成され、前記実装部の前記上面に前記発光素子を接着させたことを特徴とする発光装置。   A light emitting element, a first lead frame electrically connected to the first electrode of the light emitting element, a second lead frame electrically connected to the second electrode of the light emitting element, the light emitting element, and the light emitting element A surface-mount type light emitting device comprising a connecting portion between a first electrode and a first lead frame, and an insulator for sealing a connecting portion between the second electrode of the light emitting element and the second lead frame, wherein the first lead The frame has a flat upper surface, and a plurality of convex shapes having one or the same height on the connection portion side and a concave mounting portion on the back surface side, and the light emitting element is adhered to the upper surface of the mounting portion A light emitting device characterized by that. 前記実装部の高さは、０．０１〜０．１５ｍｍであることを特徴とする請求項１記載の発光装置。   The light emitting device according to claim 1, wherein a height of the mounting portion is 0.01 to 0.15 mm. 前記実装部の前記上面の面積は、前記発光素子の面積と同等又はそれより小さく形成されていることを特徴とする請求項１又は２記載の発光装置。   The light emitting device according to claim 1, wherein an area of the upper surface of the mounting portion is formed to be equal to or smaller than an area of the light emitting element. 発光素子の第１電極及び第２電極に接続される第１リードフレーム及び第２リードフレームを設け、第１リードフレームには１又は同一高さの複数の凸状に形成されて、発光素子を載置するための上面に平坦な実装部が形成されていることを特徴とするリードフレーム。   A first lead frame and a second lead frame connected to the first electrode and the second electrode of the light emitting element are provided, and the first lead frame is formed in one or a plurality of convex shapes having the same height, and the light emitting element is A lead frame, wherein a flat mounting portion is formed on an upper surface for mounting. 前記実装部の高さは、０．０１〜０．１５ｍｍであることを特徴とする請求項４記載のリードフレーム。   The lead frame according to claim 4, wherein a height of the mounting portion is 0.01 to 0.15 mm. 前記実装部の前記上面部の面積は、発光素子の面積と同等又はそれより小さく形成されていることを特徴とする請求項４又は５記載のリードフレーム。   6. The lead frame according to claim 4, wherein an area of the upper surface portion of the mounting portion is formed to be equal to or smaller than an area of the light emitting element. 前記第１リードフレームは、所定位置に１又は同一高さの複数の上面が平坦な凸条をあらかじめ有する導体板によって構成されることを特徴とする請求項４又は５記載のリードフレーム。   6. The lead frame according to claim 4, wherein the first lead frame is constituted by a conductor plate having a plurality of protrusions having a flat top surface at one or the same height at a predetermined position. 薄板の導体板を用意するステップと、前記導体板を打ち抜いて第１及び第２のリードフレームを形成するステップと、前記第１リードフレームを半抜きにして平坦状の上面を有する半導体装置用実装部を形成するステップを有することを特徴とするリードフレームの製造方法。   A step of preparing a thin conductive plate, a step of punching the conductive plate to form first and second lead frames, and a mounting for a semiconductor device having a flat upper surface with the first lead frame half cut A method for manufacturing a lead frame, comprising the step of forming a portion. 前記半導体装置用実装部を形成するステップは、前記第１リードフレームを半抜きにした後、逆方向から押圧してその高さを調整するステップを含むことを特徴とするリードフレームの製造方法。   The step of forming the mounting portion for a semiconductor device includes the step of adjusting the height of the first lead frame by pressing it in the reverse direction after half-cutting the first lead frame.
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