JP2019066680A - Wavelength conversion member and light source module - Google Patents

Wavelength conversion member and light source module Download PDF

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JP2019066680A
JP2019066680A JP2017192537A JP2017192537A JP2019066680A JP 2019066680 A JP2019066680 A JP 2019066680A JP 2017192537 A JP2017192537 A JP 2017192537A JP 2017192537 A JP2017192537 A JP 2017192537A JP 2019066680 A JP2019066680 A JP 2019066680A
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light
wavelength conversion
conversion member
phase
wavelength
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JP6909695B2 (en
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雄壮 前野
Yuso Maeno
雄壮 前野
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Koito Manufacturing Co Ltd
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Priority to PCT/JP2018/036745 priority patent/WO2019069871A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Filters (AREA)

Abstract

To provide a wavelength conversion member having a light reflection unit that has excellent durability and can favorably reflect primary light, and secondary light and a light source module.SOLUTION: A wavelength conversion member (20) includes a wavelength conversion unit (21) for performing wavelength conversion of primary light of a prescribed wavelength to emit secondary light and a light reflection unit (22) that is disposed adjacent to the wavelength conversion unit (21) to reflect the primary light and secondary light. The light reflection unit (22) is constituted by a composite ceramics sintering body of a SiOphase (23) and a TiOphase (24).SELECTED DRAWING: Figure 2

Description

本発明は、波長変換部材および光源モジュールに関する。   The present invention relates to a wavelength conversion member and a light source module.

LED(Light Emitting Diode)や半導体レーザを光源として、蛍光体材料を含有した波長変換部材で波長変換して白色光を得る発光装置が用いられている。これらの発光装置では、光源から青色光や紫外光などの一次光を発光して波長変換部材に照射し、波長変換部材に含有された蛍光体が一次光により励起されて黄色光などの二次光を発光し、一次光と二次光が混色して白色光が外部に照射される。   A light emitting device is used which obtains white light by wavelength conversion with a wavelength conversion member containing a phosphor material, using an LED (Light Emitting Diode) or a semiconductor laser as a light source. In these light emitting devices, primary light such as blue light or ultraviolet light is emitted from the light source and irradiated to the wavelength conversion member, and the phosphor contained in the wavelength conversion member is excited by the primary light to generate secondary light such as yellow light Light is emitted, and the primary light and the secondary light are mixed to emit white light to the outside.

特許文献1には、半導体レーザを光源として用いた車両用灯具が提案されている。光源として半導体レーザを用いると、大出力で波長幅の狭い一次光を得られるが、指向性が非常に強く光が照射される領域が小さいという特徴がある。したがって、光源としてLEDを用いる場合と比較すると、波長変換部材の極めて小さい領域に大出力の一次光が照射されて白色光を出射し、指向性が高い発光装置が得られる。   Patent Document 1 proposes a vehicular lamp using a semiconductor laser as a light source. When a semiconductor laser is used as a light source, primary light having a large output and a narrow wavelength width can be obtained, but the directivity is very strong and the region irradiated with the light is small. Therefore, compared with the case where an LED is used as a light source, a very small area of the wavelength conversion member is irradiated with a large output primary light to emit white light, and a light emitting device having high directivity can be obtained.

特許文献2には、波長変換部材の周囲に光拡散反射部材を隣接させた光学部材を備え、半導体レーザからの一次光を波長変換部材に照射し、波長変換部材の側面から外部に向かう二次光を光拡散反射部材で反射する光半導体発光装置が記載されている。この従来技術では、波長変換部材に照射されて散乱された一次光と波長変換された二次光のうち、側方から外部に向かう光を再び波長変換部材方向に戻すため、一次光の利用効率と二次光の指向性をさらに高めることができる。   Patent Document 2 includes an optical member in which a light diffuse reflection member is adjacent to the periphery of a wavelength conversion member, and primary light from a semiconductor laser is irradiated to the wavelength conversion member, and a secondary directed from the side surface of the wavelength conversion member to the outside An optical semiconductor light emitting device is described that reflects light at a light diffuse reflector. In this prior art, among the primary light irradiated to the wavelength conversion member and scattered and the wavelength-converted secondary light, light traveling from the side to the outside is returned to the direction of the wavelength conversion member again, so the utilization efficiency of the primary light And the directivity of secondary light can be further enhanced.

図7は従来の光学部材の構造を模式的に示す断面図であり、図7(a)は光拡散反射部材として樹脂を用いた例を示し、図7(b)は光拡散反射部材としてセラミクスを用いた例を示している。図7(a)(b)に示すように、従来の光学部材は波長変換部材1と、光拡散反射部材2とを備え、波長変換部材1の周囲に隣接して光拡散反射部材2を配置している。図7(a)に示した例では、光拡散反射部材2として低屈折率の樹脂3中に高屈折率の光散乱粒子4を分散している。図7(b)に示した例では、光拡散反射部材2としてセラミクス材料5を用いており、セラミクス材料5の内部には多結晶粒界と気泡6が含まれている。これらの従来技術では、樹脂3と光散乱粒子4の屈折率差や、セラミクス材料5と気泡6の屈折率差で一次光および二次光を散乱反射している。   FIG. 7 is a cross-sectional view schematically showing the structure of a conventional optical member, and FIG. 7 (a) shows an example using a resin as a light diffusion reflection member, and FIG. 7 (b) shows ceramics as a light diffusion reflection member. Shows an example using. As shown in FIGS. 7A and 7B, the conventional optical member includes the wavelength conversion member 1 and the light diffusion reflection member 2, and the light diffusion reflection member 2 is disposed adjacent to the periphery of the wavelength conversion member 1. doing. In the example shown to Fig.7 (a), the light-scattering particle 4 of high refractive index is disperse | distributed in the resin 3 of the low refractive index as the light diffusive reflection member 2. As shown in FIG. In the example shown in FIG. 7B, the ceramic material 5 is used as the light diffusive reflection member 2, and polycrystalline grain boundaries and air bubbles 6 are included in the ceramic material 5. In these conventional techniques, the primary light and the secondary light are scattered and reflected by the difference in refractive index between the resin 3 and the light scattering particle 4 and the difference in refractive index between the ceramic material 5 and the bubble 6.

特開2012−221633号公報JP, 2012-221633, A 特開2015−023215号公報JP, 2015-0223215, A

しかし、図7(a)に示した樹脂3を用いた従来技術では、短波長の光である一次光が照射されることによる樹脂3の劣化や、波長変換部材1での波長変換に伴う熱による樹脂3の劣化が問題となり、樹脂3の耐久性を向上することが困難であった。また、図7(b)に示したセラミクス材料5を用いた従来技術では、セラミクス材料5の焼結体の密度が高く、セラミクス材料5中に含まれる気泡6の密度が低いため、屈折率差で光を散乱できる界面が少なくなり、反射率を向上させることが困難であった。   However, in the prior art using the resin 3 shown in FIG. 7A, the degradation of the resin 3 due to the irradiation of the primary light which is the light of short wavelength and the heat accompanying the wavelength conversion in the wavelength conversion member 1 Deterioration of the resin 3 caused by the above-mentioned problem is a problem, and it is difficult to improve the durability of the resin 3. Further, in the prior art using ceramic material 5 shown in FIG. 7 (b), the density of the sintered body of ceramic material 5 is high, and the density of air bubbles 6 contained in ceramic material 5 is low. There are fewer interfaces that can scatter light, and it is difficult to improve the reflectance.

そこで本発明は、耐久性に優れるとともに良好に一次光と二次光を反射できる光反射部を備えた波長変換部材および光源モジュールを提供することを課題とする。   Then, this invention makes it a subject to provide the wavelength conversion member provided with the light reflection part which can reflect primary light and secondary light favorably while being excellent in durability, and a light source module.

上記課題を解決するために、本発明の波長変換部材は、所定波長の一次光を波長変換して二次光を出射する波長変換部と、前記波長変換部に隣接して配置され、前記一次光および前記二次光を反射する光反射部を備え、前記光反射部は、SiOとTiOを複合化したセラミクス焼結体で構成されていることを特徴とする。 In order to solve the above-mentioned subject, the wavelength conversion member of the present invention is arranged adjacent to the wavelength conversion part which carries out wavelength conversion of the primary light of a predetermined wavelength, and emits secondary light, and is arranged A light reflecting portion for reflecting light and the secondary light is provided, and the light reflecting portion is made of a ceramic sintered body in which SiO 2 and TiO 2 are compounded.

このような本発明の波長変換部材では、波長変換部に隣接して配置された光反射部が、SiOとTiOを複合化したセラミクス焼結体で構成されているため、耐久性に優れるとともに良好に一次光と二次光を反射することができる。 In such a wavelength conversion member of the present invention, since the light reflection portion disposed adjacent to the wavelength conversion portion is made of a ceramic sintered body in which SiO 2 and TiO 2 are complexed, the durability is excellent. The primary light and the secondary light can be well reflected.

また本発明の一態様では、前記光反射部には、TiOが20〜80体積%範囲で含まれている。 In one aspect of the present invention, the light reflecting portion contains TiO 2 in a range of 20 to 80% by volume.

また本発明の一態様では、前記SiOまたは前記TiOのうち、前記光反射部において占める体積%の小さい材料の平均粒径が10μm以下である。 In one aspect of the present invention, of the SiO 2 or the TiO 2 , the average particle diameter of the material having a small volume% in the light reflecting portion is 10 μm or less.

また本発明の一態様では、前記波長変換部材の側面全体が、前記光反射部に接触している。   In one aspect of the present invention, the entire side surface of the wavelength conversion member is in contact with the light reflecting portion.

また上記課題を解決するために、本発明の光源モジュールは、上記何れか一つに記載の波長変換部材と、前記波長変換部材に対して前記一次光を照射する半導体発光素子を備えることを特徴とする。   In order to solve the above-mentioned subject, a light source module of the present invention is characterized by including the wavelength conversion member according to any one of the above, and a semiconductor light emitting element for irradiating the wavelength conversion member with the primary light. I assume.

本発明では、耐久性に優れるとともに良好に一次光と二次光を反射できる光反射部を備えた波長変換部材および光源モジュールを提供することができる。   According to the present invention, it is possible to provide a wavelength conversion member and a light source module provided with a light reflection portion which is excellent in durability and which can reflect primary light and secondary light well.

第1実施形態における光源モジュール10を示す模式断面図である。It is a schematic cross section which shows the light source module 10 in 1st Embodiment. 第1実施形態における波長変換部材20の構造を模式的に示す部分拡大断面図である。It is a partial expanded sectional view which shows the structure of the wavelength conversion member 20 in 1st Embodiment typically. 第2実施形態における光源モジュール30を示す模式断面図である。It is a schematic cross section which shows the light source module 30 in 2nd Embodiment. 第3実施形態における光源モジュール40を示す模式断面図である。It is a schematic cross section which shows the light source module 40 in 3rd Embodiment. 第4実施形態における光源モジュール50を示す模式断面図である。It is a schematic cross section which shows the light source module 50 in 4th Embodiment. 第5実施形態における波長変換部材60の構造を模式的に示す部分拡大断面図である。It is a partial expanded sectional view which shows the structure of the wavelength conversion member 60 in 5th Embodiment typically. 従来の光学部材の構造を模式的に示す断面図であり、図7(a)は光拡散反射部材として樹脂を用いた例を示し、図7(b)は光拡散反射部材としてセラミクスを用いた例を示している。It is sectional drawing which shows the structure of the conventional optical member typically, FIG. 7 (a) shows the example using resin as a light diffusive reflection member, FIG.7 (b) uses ceramics as a light diffusive reflection member An example is shown.

(第1実施形態)
以下、本発明の実施の形態について、図面を参照して詳細に説明する。各図面に示される同一または同等の構成要素、部材、処理には、同一の符号を付すものとし、適宜重複した説明は省略する。図1は、本実施形態における光源モジュール10を示す模式断面図である。
First Embodiment
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same or equivalent components, members, and processes shown in the drawings are denoted by the same reference numerals, and duplicative descriptions will be omitted as appropriate. FIG. 1 is a schematic cross-sectional view showing a light source module 10 in the present embodiment.

光源モジュール10は、ステム11と、発光素子12と、側壁13と、天面14と、波長変換部材20とを備える。光源モジュール10では、発光素子12から図中矢印で示すように一次光が波長変換部材20に照射され、波長変換部材20で波長変換された二次光と混色して白色光が図中矢印で示すように外部に出射される。図1では光源モジュール10として所謂CAN型パッケージのものを示したが、CAN型パッケージに限定されず各種半導体レーザ用のパッケージを用いることができる。   The light source module 10 includes a stem 11, a light emitting element 12, a side wall 13, a top surface 14, and a wavelength conversion member 20. In the light source module 10, primary light is emitted from the light emitting element 12 to the wavelength conversion member 20 as indicated by arrows in the drawing, and mixed with secondary light wavelength-converted by the wavelength conversion member 20, and white light is indicated by arrows in the drawing. It is emitted outside as shown. Although FIG. 1 shows a so-called CAN type package as the light source module 10, the present invention is not limited to the CAN type package and packages for various semiconductor lasers can be used.

ステム11は、発光素子12を搭載して側壁13が固定される部材であり、図示しないリードピンやヒートシンクなどを備えて、外部から発光素子12に電力が供給されるとともに、発光素子12で発生した熱を外部に伝える。ステム11を構成する材料は特に限定されないが、放熱性が良好な銅などの金属が望ましい。   The stem 11 is a member on which the light emitting element 12 is mounted and the side wall 13 is fixed. The stem 11 includes lead pins and a heat sink (not shown), and power is supplied to the light emitting element 12 from the outside. Communicate the heat to the outside. Although the material which comprises the stem 11 is not specifically limited, Metals, such as copper with favorable heat dissipation, are desirable.

発光素子12は、電力が供給されてレーザ光を発振する半導体レーザである。発光素子12を構成する材料は特に限定されないが、一次光として青色光や紫外光を照射する場合には窒化物系半導体が用いられる、また、発光素子12の共振器構造や電極構造、電流狭窄構造などの素子構造も特に限定されず、必要な発光強度と発振波長を得るために適切な構造を採用することができる。本実施形態では一次光を発光する発光素子12として半導体レーザを用いるものを示したが、波長変換部材20で波長変換される一次光を出射する素子であれば半導体レーザに限定されず、発光ダイオードや有機ELなどであってもよい。   The light emitting element 12 is a semiconductor laser which is supplied with power and oscillates a laser beam. The material constituting the light emitting element 12 is not particularly limited, but when irradiating blue light or ultraviolet light as primary light, a nitride-based semiconductor is used, and the resonator structure or electrode structure of the light emitting element 12 or current narrowing The element structure such as the structure is also not particularly limited, and an appropriate structure can be adopted to obtain the required emission intensity and oscillation wavelength. In the present embodiment, a semiconductor laser is used as the light emitting element 12 for emitting primary light, but the element is not limited to the semiconductor laser as long as the element emits primary light wavelength-converted by the wavelength conversion member 20. Or organic EL.

側壁13は、ステム11上に立設された筒状の部材であり、ステム11上で発光素子12の周囲を囲んで配置される。天面14は側壁13上で発光素子12を覆って配置された平板状部材であり、中央には開口部が設けられて波長変換部材20が固定されている。側壁13および天面14を構成する材料は限定されないが、波長変換部材20で発生した熱をステム11に良好に伝えるためには熱伝導性に優れた金属材料が好ましい。   The side wall 13 is a cylindrical member provided upright on the stem 11 and is disposed on the stem 11 so as to surround the light emitting element 12. The top surface 14 is a flat member disposed on the side wall 13 so as to cover the light emitting element 12, and an opening is provided at the center to fix the wavelength conversion member 20. Although the material which comprises the side wall 13 and the top surface 14 is not limited, In order to transmit the heat which generate | occur | produced in the wavelength conversion member 20 favorably to the stem 11, the metal material excellent in thermal conductivity is preferable.

図2は、本実施形態における波長変換部材20の構造を模式的に示す部分拡大断面図である。図2に示すように波長変換部材20は、波長変換部21と光反射部22とが互いに接触して一体に成形された焼結体である。波長変換部材20は側壁13の開口部に固定されて光源モジュール10からの光取り出し部として機能している。   FIG. 2 is a partially enlarged cross-sectional view schematically showing the structure of the wavelength conversion member 20 in the present embodiment. As shown in FIG. 2, the wavelength conversion member 20 is a sintered body in which the wavelength conversion portion 21 and the light reflection portion 22 are in contact with each other and integrally formed. The wavelength conversion member 20 is fixed to the opening of the side wall 13 and functions as a light extraction portion from the light source module 10.

波長変換部21は、発光素子12から照射される一次光により励起されて二次光を発する蛍光体材料を含有する部分であり、一次光と二次光とが混色して白色光を外部に照射する。ここでは一次光と二次光の混色で白色光を照射する例を示したが、複数の蛍光体材料を備えて複数色の二次光を発光して二次光同士の混色によって白色光を照射するとしてもよい。また、照射する光として白色光の例を示したが、その他の単色光であってもよく、複数色を混色した白色以外の色であってもよい。   The wavelength conversion unit 21 is a portion containing a phosphor material that emits secondary light by being excited by primary light emitted from the light emitting element 12, and the white light is mixed with the primary light and the secondary light to the outside. Irradiate. Here, an example is shown in which white light is irradiated by mixing the primary light and the secondary light, but a plurality of phosphor materials are provided to emit secondary light of a plurality of colors and the white light is mixed by mixing the secondary lights. It may be irradiated. Also, although an example of white light has been shown as the light to be irradiated, other monochromatic light may be used, and a color other than white in which a plurality of colors are mixed may be used.

波長変換部21のサイズは、発光素子12からの一次光が照射される領域よりも大きく、一次光を適切に二次光に波長変換できればよく、例えば厚さ数百μm程度で直径が0.1〜数mm程度である。波長変換部21に含有される蛍光体材料は、光反射部22と同時焼結するためセラミクス蛍光体であることが好ましい。具体的材料としては、YAl12、すなわちYAG(Yttrium Alminum Garnet)粉末を用いて作成されたセラミクス素地を焼結して得られるセラミクス蛍光体が最も好ましい。YAG焼結体を波長変換部21として用いることで、一次光の青色光を波長変換して二次光の黄色光を出射し、一次光と二次光の混色により白色を得られる。 The size of the wavelength conversion unit 21 is larger than the area irradiated with the primary light from the light emitting element 12 as long as the wavelength of the primary light can be appropriately converted to the secondary light. It is about 1 to several mm. The phosphor material contained in the wavelength conversion portion 21 is preferably a ceramic phosphor so as to be co-sintered with the light reflection portion 22. As a specific material, a ceramic phosphor obtained by sintering a ceramic base made of Y 3 Al 5 O 12 , that is, YAG (Yttrium Alminum Garnet) powder, is most preferable. By using a YAG sintered body as the wavelength conversion unit 21, the blue light of primary light is wavelength-converted to emit yellow light of secondary light, and white color can be obtained by mixing the primary light and the secondary light.

本実施形態では、波長変換部21として光反射部22と一体に成形した焼結体の例を示したが、光反射部22と別体に成形して組み合わせるとしてもよく、樹脂中に蛍光体粒子を分散した構造であってもよい。   In the present embodiment, an example of a sintered body formed integrally with the light reflecting portion 22 as the wavelength conversion portion 21 is shown, but the light reflecting portion 22 may be separately formed and combined, and the phosphor in the resin It may be a structure in which particles are dispersed.

光反射部22は、波長変換部21の周囲で側面全体に接触して波長変換部21を保持する部材であり、SiOとTiOを複合化したセラミクス焼結体で構成されている。光反射部22は、波長変換部21と一体に成形されて同時に焼結されることが好ましいが、波長変換部21とは別体に成形して組み合わせるとしてもよい。 The light reflecting portion 22 is a member that holds the wavelength converting portion 21 in contact with the entire side surface around the wavelength converting portion 21 and is made of a ceramic sintered body in which SiO 2 and TiO 2 are complexed. The light reflecting portion 22 is preferably formed integrally with the wavelength conversion portion 21 and sintered simultaneously, but may be formed separately and combined with the wavelength conversion portion 21.

図2に示すように光反射部22は、SiO相23の内部でTiO相24が3次元的に絡み合った構造を有している。SiO相23は、波長変換部21と接触して光反射部22の全域にわたって連続的に形成されている相であり、内部にTiO相24が3次元的に絡み合っている。図2では、SiO相23の内部でTiO相24が3次元的に絡み合った構造を示したが、TiO相24の内部でSiO相23が3次元的に絡み合った構造であってもよい。 As shown in FIG. 2, the light reflecting portion 22 has a structure in which the TiO 2 phase 24 is three-dimensionally intertwined in the SiO 2 phase 23. The SiO 2 phase 23 is a phase in contact with the wavelength conversion portion 21 and continuously formed over the entire area of the light reflection portion 22, and the TiO 2 phase 24 is entangled three-dimensionally inside. In Figure 2, but showing the internal TiO 2 phase 24 is entangled three-dimensionally by the structure of the SiO 2 phase 23, SiO 2 phase 23 inside the TiO 2 phase 24 is a three-dimensionally entangled structure It is also good.

光反射部22に含まれるSiO相23の屈折率は1.4程度であり、TiO相24の屈折率は2.5〜2.7程度であるから、SiO相23とTiO相24の屈折率差は1.1〜1.3程度となる。このようにSiO相23とTiO相24の屈折率差を大きくすると、図2中に矢印で示したように、波長変換部21から光反射部22方向に進む光は、3次元的に絡み合ったSiO相23とTiO相24の界面で反射される。これにより、光反射部22は全体として白色の領域となり、横方向への光漏れを防止でき、光は波長変換部21方向に戻されて波長変換部21から外部に取り出される。 The refractive index of the SiO 2 phase 23 contained in the light reflecting portion 22 is about 1.4, and the refractive index of the TiO 2 phase 24 is about 2.5 to 2.7, so the SiO 2 phase 23 and the TiO 2 phase are included. The refractive index difference of 24 is about 1.1 to 1.3. Thus, when the refractive index difference between the SiO 2 phase 23 and the TiO 2 phase 24 is increased, light traveling from the wavelength conversion portion 21 toward the light reflection portion 22 is three-dimensionally as shown by the arrows in FIG. The light is reflected at the interface between the entangled SiO 2 phase 23 and the TiO 2 phase 24. As a result, the light reflecting portion 22 as a whole becomes a white region, and light leakage in the lateral direction can be prevented, and the light is returned to the direction of the wavelength conversion portion 21 and extracted from the wavelength conversion portion 21 to the outside.

光反射部22に含まれるTiO相24の比率は、20〜80体積%範囲が好ましい。TiO相24の比率が20体積%未満または80体積%を超えると、SiO相23とTiO相24を複合化が不十分になり、屈折率差をもった界面の面積が小さくなるため十分な反射率を得ることが困難になる。また、光反射部22に含まれるSiO相23またはTiO相24のうち、光反射部22において占める体積%の小さいほうの材料の平均粒径が10μm以下であることが好ましい。平均粒径を10μmより大きくすると、屈折率差をもった界面の面積が小さくなるため十分な反射率を得ることが困難になる。 The ratio of TiO 2 phase 24 included in the light reflecting portion 22 is preferably 20 to 80 vol% range. If the ratio of the TiO 2 phase 24 is less than 20% by volume or exceeds 80% by volume, the composition of the SiO 2 phase 23 and the TiO 2 phase 24 becomes insufficient, and the area of the interface having a difference in refractive index decreases. It becomes difficult to obtain sufficient reflectance. Also, of the SiO 2 phase 23 or TiO 2 phase 24 included in the light reflecting portion 22, it is preferable that the average particle diameter on a volume percent of the smaller material occupying in the light reflecting portion 22 is 10μm or less. When the average particle diameter is larger than 10 μm, it is difficult to obtain a sufficient reflectance because the area of the interface having the refractive index difference is reduced.

本実施形態では、光反射部22をSiO相23とTiO相24を複合化したセラミクス焼結体で構成していることから、SiO相23とTiO相24が3次元的に絡み合った構造によりSiO相23とTiO相24の界面の面積が大きくなり、良好に一次光と二次光を反射することができる。また、光反射部22はセラミクス焼結体であることから、樹脂と光散乱剤を用いた従来技術よりも熱や光に対する耐久性を向上させることができる。 In the present embodiment, since the light reflecting portion 22 is formed of a ceramic sintered body in which the SiO 2 phase 23 and the TiO 2 phase 24 are composited, the SiO 2 phase 23 and the TiO 2 phase 24 are entangled three-dimensionally. By the above structure, the area of the interface between the SiO 2 phase 23 and the TiO 2 phase 24 becomes large, and the primary light and the secondary light can be well reflected. Further, since the light reflecting portion 22 is a ceramic sintered body, it is possible to improve the resistance to heat and light as compared with the prior art using a resin and a light scattering agent.

(第2実施形態)
次に、本発明の第2実施形態について図3を用いて説明する。第1実施形態と重複する内容は説明を省略する。図3は、本実施形態における光源モジュール30を示す模式断面図である。
Second Embodiment
Next, a second embodiment of the present invention will be described with reference to FIG. The same contents as the first embodiment will not be described. FIG. 3 is a schematic cross-sectional view showing the light source module 30 in the present embodiment.

光源モジュール30は、ステム11と、発光素子12と、波長変換部材20とを備える。光源モジュール30では、発光素子12から一次光が波長変換部材20に照射され、波長変換部材20で波長変換された二次光と混色して白色光が外部に出射される。   The light source module 30 includes a stem 11, a light emitting element 12, and a wavelength conversion member 20. In the light source module 30, primary light is emitted from the light emitting element 12 to the wavelength conversion member 20, mixed with secondary light wavelength-converted by the wavelength conversion member 20, and white light is emitted to the outside.

本実施形態でも、波長変換部材20は波長変換部21と光反射部22とが互いに接触しており、光反射部22はSiO相23とTiO相24を複合化したセラミクス焼結体で構成されている。図2では、波長変換部21の側面が光反射部22に接触し底面がステム11に接触した例を示したが、光反射部22に凹部を形成して凹部内に波長変換部21を埋め込んだ構造であってもよい。 Also in this embodiment, the wavelength conversion member 20 has the wavelength conversion portion 21 and the light reflection portion 22 in contact with each other, and the light reflection portion 22 is a ceramic sintered body in which the SiO 2 phase 23 and the TiO 2 phase 24 are composited. It is configured. Although FIG. 2 shows an example in which the side surface of the wavelength conversion unit 21 is in contact with the light reflection unit 22 and the bottom surface is in contact with the stem 11, a recess is formed in the light reflection unit 22 and the wavelength conversion unit 21 is embedded in the recess. It may be a structure.

発光素子12は、波長変換部21の露出面側に配置されており、一次光を波長変換部21に向けて照射する。波長変換部21に入射した一次光は、蛍光体材料により波長変換されて露出面から外部に取り出される。   The light emitting element 12 is disposed on the exposed surface side of the wavelength conversion unit 21 and emits primary light toward the wavelength conversion unit 21. The primary light incident on the wavelength conversion unit 21 is wavelength-converted by the phosphor material and is extracted from the exposed surface to the outside.

本実施形態でも、光反射部22をSiO相23とTiO相24を複合化したセラミクス焼結体で構成していることから、SiO相23とTiO相24が3次元的に絡み合った構造によりSiO相23とTiO相24の界面の面積が大きくなり、良好に一次光と二次光を反射することができる。また、光反射部22はセラミクス焼結体であることから、樹脂と光散乱剤を用いた従来技術よりも熱や光に対する耐久性を向上させることができる。 Also in this embodiment, since the light reflecting portion 22 is formed of the ceramic sintered body in which the SiO 2 phase 23 and the TiO 2 phase 24 are composited, the SiO 2 phase 23 and the TiO 2 phase 24 are entangled three-dimensionally. By the above structure, the area of the interface between the SiO 2 phase 23 and the TiO 2 phase 24 becomes large, and the primary light and the secondary light can be well reflected. Further, since the light reflecting portion 22 is a ceramic sintered body, it is possible to improve the resistance to heat and light as compared with the prior art using a resin and a light scattering agent.

(第3実施形態)
次に、本発明の第3実施形態について図4を用いて説明する。第1実施形態と重複する内容は説明を省略する。図4は、本実施形態における光源モジュール40を示す模式断面図である。
Third Embodiment
Next, a third embodiment of the present invention will be described with reference to FIG. The same contents as the first embodiment will not be described. FIG. 4 is a schematic cross-sectional view showing the light source module 40 in the present embodiment.

本実施形態の光源モジュール40は、ステム11と、発光素子12と、波長変換部材20とを備え、発光素子12として面発光するLEDを用いている。また、光源モジュール40はステム11上に複数の発光素子12が搭載され、発光素子12の上部に波長変換部材20が配置されて、波長変換部21が発光素子12の光出射位置を覆う構成とされている。複数の発光素子12の側面には空隙41が設けられている。このような光源モジュール40では、発光素子12から一次光が波長変換部材20に照射され、波長変換部材20で波長変換された二次光と混色して白色光が外部に出射される。   The light source module 40 of the present embodiment includes a stem 11, a light emitting element 12, and a wavelength conversion member 20, and uses an LED that emits surface light as the light emitting element 12. In the light source module 40, the plurality of light emitting elements 12 are mounted on the stem 11, the wavelength conversion member 20 is disposed above the light emitting element 12, and the wavelength conversion unit 21 covers the light emitting position of the light emitting element 12. It is done. Air gaps 41 are provided on side surfaces of the plurality of light emitting elements 12. In such a light source module 40, primary light is emitted from the light emitting element 12 to the wavelength conversion member 20, mixed with secondary light wavelength-converted by the wavelength conversion member 20, and white light is emitted to the outside.

本実施形態でも、光反射部22をSiO相23とTiO相24を複合化したセラミクス焼結体で構成していることから、SiO相23とTiO相24が3次元的に絡み合った構造によりSiO相23とTiO相24の界面の面積が大きくなり、良好に一次光と二次光を反射することができる。また、光反射部22はセラミクス焼結体であることから、樹脂と光散乱剤を用いた従来技術よりも熱や光に対する耐久性を向上させることができる。 Also in this embodiment, since the light reflecting portion 22 is formed of the ceramic sintered body in which the SiO 2 phase 23 and the TiO 2 phase 24 are composited, the SiO 2 phase 23 and the TiO 2 phase 24 are entangled three-dimensionally. By the above structure, the area of the interface between the SiO 2 phase 23 and the TiO 2 phase 24 becomes large, and the primary light and the secondary light can be well reflected. Further, since the light reflecting portion 22 is a ceramic sintered body, it is possible to improve the resistance to heat and light as compared with the prior art using a resin and a light scattering agent.

(第4実施形態)
次に、本発明の第4実施形態について図5を用いて説明する。第3実施形態と重複する内容は説明を省略する。図5は、本実施形態における光源モジュール50を示す模式断面図である。
Fourth Embodiment
Next, a fourth embodiment of the present invention will be described with reference to FIG. The contents overlapping with the third embodiment will not be described. FIG. 5 is a schematic cross-sectional view showing the light source module 50 in the present embodiment.

本実施形態の光源モジュール50は、ステム11と、発光素子12と、波長変換部材20とを備え、発光素子12として面発光するLEDを用いている。また、光源モジュール50はステム11上に複数の発光素子12が搭載され、発光素子12の上部に波長変換部材20が配置されて、波長変換部21が発光素子12の光出射位置を覆う構成とされている。複数の発光素子12の側面には反射樹脂51が充填されている。光源モジュール50では、発光素子12から一次光が波長変換部材20に照射され、波長変換部材20で波長変換された二次光と混色して白色光が外部に出射される。   The light source module 50 according to the present embodiment includes the stem 11, the light emitting element 12, and the wavelength conversion member 20, and uses an LED that emits surface light as the light emitting element 12. In the light source module 50, the plurality of light emitting elements 12 are mounted on the stem 11, the wavelength converting member 20 is disposed above the light emitting element 12, and the wavelength converting unit 21 covers the light emitting position of the light emitting element 12. It is done. The side surfaces of the plurality of light emitting elements 12 are filled with a reflective resin 51. In the light source module 50, primary light is emitted from the light emitting element 12 to the wavelength conversion member 20, mixed with secondary light wavelength-converted by the wavelength conversion member 20, and white light is emitted to the outside.

反射樹脂51は、樹脂材料中に光散乱粒子を分散し、樹脂と光散乱粒子の屈折率差により光を反射する部材である。反射樹脂51を構成する樹脂材料は限定されず、例えばエポキシ樹脂やシリコーン樹脂を用いることができる。また、光散乱粒子を構成する材料も限定されず、例えばTiO,Al,SiO,ZrO等が挙げられる。 The reflective resin 51 is a member that disperses light scattering particles in a resin material and reflects light due to the difference in refractive index between the resin and the light scattering particles. The resin material which comprises the reflection resin 51 is not limited, For example, an epoxy resin and a silicone resin can be used. The material constituting the light-scattering particles is not limited, for example TiO 2, Al 2 O 3, SiO 2, ZrO 2 and the like.

本実施形態では、発光素子12の側面を反射樹脂51で充填していることから、発光素子12の側面から出射した一次光は反射樹脂51で反射されて発光素子12方向に戻り、発光素子12の上面側から取り出されて波長変換部21に入射する。これにより、発光素子12から出射した一次光を効率良く波長変換部21に到達させて二次光に波長変換することができる。   In the present embodiment, since the side surface of the light emitting element 12 is filled with the reflecting resin 51, the primary light emitted from the side surface of the light emitting element 12 is reflected by the reflecting resin 51 and returns toward the light emitting element 12. The light is extracted from the upper surface side of the light source and enters the wavelength conversion unit 21. As a result, the primary light emitted from the light emitting element 12 can efficiently reach the wavelength conversion unit 21 and can be wavelength-converted into secondary light.

また本実施形態でも、光反射部22をSiO相23とTiO相24を複合化したセラミクス焼結体で構成していることから、SiO相23とTiO相24が3次元的に絡み合った構造によりSiO相23とTiO相24の界面の面積が大きくなり、良好に一次光と二次光を反射することができる。また、光反射部22はセラミクス焼結体であることから、樹脂と光散乱剤を用いた従来技術よりも熱や光に対する耐久性を向上させることができる。 Also in this embodiment, since the light reflecting portion 22 is formed of a ceramic sintered body in which the SiO 2 phase 23 and the TiO 2 phase 24 are composited, the SiO 2 phase 23 and the TiO 2 phase 24 are three-dimensionally The entangled structure makes the area of the interface between the SiO 2 phase 23 and the TiO 2 phase 24 large, so that the primary light and the secondary light can be well reflected. Further, since the light reflecting portion 22 is a ceramic sintered body, it is possible to improve the resistance to heat and light as compared with the prior art using a resin and a light scattering agent.

(第5実施形態)
次に、本発明の第5実施形態について図6を用いて説明する。第1実施形態と重複する内容は説明を省略する。図6は、本実施形態における波長変換部材60の構造を模式的に示す部分拡大断面図である。図6に示すように本実施形態の波長変換部材60は、波長変換部61と光反射部62とが互いに接触して一体に成形された焼結体である。
Fifth Embodiment
Next, a fifth embodiment of the present invention will be described using FIG. The same contents as the first embodiment will not be described. FIG. 6 is a partially enlarged cross-sectional view schematically showing the structure of the wavelength conversion member 60 in the present embodiment. As shown in FIG. 6, the wavelength conversion member 60 of the present embodiment is a sintered body in which the wavelength conversion portion 61 and the light reflection portion 62 are in contact with each other and integrally formed.

波長変換部61は、発光素子12から照射される一次光により励起されて二次光を発する蛍光体材料を含有する部分であり、一次光と二次光とが混色して白色光を外部に照射する。本実施形態では、波長変換部61として光反射部62と一体に成形した焼結体の例を示したが、光反射部62と別体に成形して組み合わせるとしてもよく、樹脂中に蛍光体粒子を分散した構造であってもよい。   The wavelength conversion unit 61 is a portion containing a phosphor material that emits secondary light by being excited by primary light emitted from the light emitting element 12, and the white light is mixed with the primary light and the secondary light to the outside. Irradiate. In the present embodiment, an example of a sintered body formed integrally with the light reflecting portion 62 as the wavelength conversion portion 61 is shown, but the light reflecting portion 62 may be separately formed and combined, and the phosphor in the resin It may be a structure in which particles are dispersed.

光反射部62は、波長変換部61の周囲で側面全体に接触して波長変換部61を保持する部材であり、セラミクス焼結体で構成されている。光反射部62は、波長変換部61と一体に成形されて同時に焼結されることが好ましいが、波長変換部61とは別体に成形して組み合わせるとしてもよい。光反射部62を構成するセラミクス材料は限定されないが、光の吸収端が400nm以下で可視光を吸収しないものが好ましく、例えばTiO,Al,SiO,ZrO,Y,YAG等が挙げられる。 The light reflecting portion 62 is a member that contacts the entire side surface around the wavelength converting portion 61 and holds the wavelength converting portion 61, and is made of a ceramic sintered body. The light reflecting portion 62 is preferably formed integrally with the wavelength conversion portion 61 and sintered simultaneously, but may be formed separately and combined with the wavelength conversion portion 61. The ceramic material constituting the light reflecting portion 62 is not limited, but preferably the light absorbing end is 400 nm or less and does not absorb visible light, for example, TiO 2 , Al 2 O 3 , SiO 2 , ZrO 2 , Y 2 O 3 , YAG, etc.

図6に示すように、光反射部62はセラミクス相63中に閉気孔64を多数含んでいる。閉気孔64はセラミクス材料を含まない気泡であるため屈折率が低く、セラミクス相63との屈折率差が大きい。そのため、光反射部62に入射した光はセラミクス相63と閉気孔64との界面で良好に散乱反射し、光反射部22は全体として白色の領域となる。これにより、光反射部62は横方向への光漏れを防止でき、光は波長変換部21方向に戻されて波長変換部21から外部に取り出される。   As shown in FIG. 6, the light reflecting portion 62 includes a large number of closed pores 64 in the ceramic phase 63. Since the closed pore 64 is a bubble not containing a ceramic material, the refractive index is low, and the refractive index difference with the ceramic phase 63 is large. Therefore, light incident on the light reflecting portion 62 is well scattered and reflected at the interface between the ceramic phase 63 and the closed pores 64, and the light reflecting portion 22 becomes a white region as a whole. As a result, the light reflection portion 62 can prevent light leakage in the lateral direction, and the light is returned to the direction of the wavelength conversion portion 21 and extracted from the wavelength conversion portion 21 to the outside.

また、光反射部22中における閉気孔64の比率は、10〜50体積%の範囲であることが好ましい。閉気孔64が10体積%未満である場合には、セラミクス相63と閉気孔64の界面の面積が少ないため反射率を高めることが困難である。また、閉気孔64が50体積%より多い場合には、光反射部22の機械的強度を保つことが困難になる。   Moreover, it is preferable that the ratio of the closed pore 64 in the light reflection part 22 is the range of 10-50 volume%. If the closed pores 64 are less than 10% by volume, it is difficult to increase the reflectance because the area of the interface between the ceramic phase 63 and the closed pores 64 is small. In addition, when the closed pores 64 are more than 50% by volume, it is difficult to maintain the mechanical strength of the light reflecting portion 22.

本実施形態では、光反射部22として光の吸収端が400nm以下のセラミクス相63中に、10〜50体積%の閉気孔64が含まれるものを用いている。これによりセラミクス相63と閉気孔64の界面の面積が大きくなり、良好に一次光と二次光を反射することができる。また、光反射部22はセラミクス焼結体であることから、樹脂と光散乱剤を用いた従来技術よりも熱や光に対する耐久性を向上させることができる。   In the present embodiment, as the light reflecting portion 22, a ceramic phase 63 in which the absorption edge of light is 400 nm or less includes 10 to 50% by volume of closed pores 64. As a result, the area of the interface between the ceramic phase 63 and the closed pores 64 is increased, and the primary light and the secondary light can be well reflected. Further, since the light reflecting portion 22 is a ceramic sintered body, it is possible to improve the resistance to heat and light as compared with the prior art using a resin and a light scattering agent.

本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。   The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments. Is also included in the technical scope of the present invention.

10,30,40,50…光源モジュール
11…ステム
12…発光素子
13…側壁
14…天面
20,60…波長変換部材
21,61…波長変換部
22,62…光反射部
23…SiO
24…TiO
41…空隙
51…反射樹脂
63…セラミクス相
64…閉気孔
DESCRIPTION OF SYMBOLS 10, 30, 40, 50 ... Light source module 11 ... Stem 12 ... Light emitting element 13 ... Side wall 14 ... Top surface 20, 60 ... Wavelength conversion member 21, 61 ... Wavelength conversion part 22, 62 ... Light reflection part 23 ... SiO 2 phase 24 TiO 2 phase 41 void 51 reflective resin 63 ceramic phase 64 closed pore

Claims (5)

所定波長の一次光を波長変換して二次光を出射する波長変換部と、
前記波長変換部に隣接して配置され、前記一次光および前記二次光を反射する光反射部を備え、
前記光反射部は、SiOとTiOを複合化したセラミクス焼結体で構成されていることを特徴とする波長変換部材。
A wavelength conversion unit that wavelength-converts primary light of a predetermined wavelength and emits secondary light;
A light reflection unit disposed adjacent to the wavelength conversion unit and reflecting the primary light and the secondary light;
The light reflecting portion, the wavelength conversion member, characterized in that it is composed of SiO 2 and TiO 2 in ceramics sintered body composite.
請求項1に記載の波長変換部材であって、
前記光反射部には、TiOが20〜80体積%範囲で含まれていることを特徴とする波長変換部材。
A wavelength conversion member according to claim 1, wherein
The wavelength conversion member characterized in that TiO 2 is contained in a range of 20 to 80% by volume in the light reflecting portion.
請求項1または2に記載の波長変換部材であって、
前記SiOまたは前記TiOのうち、前記光反射部において占める体積%の小さい材料の平均粒径が10μm以下であることを特徴とする波長変換部材。
The wavelength conversion member according to claim 1 or 2,
A wavelength conversion member characterized in that an average particle diameter of a material having a small volume percentage occupied in the light reflecting portion among the SiO 2 or the TiO 2 is 10 μm or less.
請求項1から3の何れか一つに記載の波長変換部材であって、
前記波長変換部材の側面全体が、前記光反射部に接触していることを特徴とする波長変換部材。
A wavelength conversion member according to any one of claims 1 to 3, wherein
A wavelength conversion member, wherein the entire side surface of the wavelength conversion member is in contact with the light reflecting portion.
請求項1から4の何れか一つに記載の波長変換部材と、
前記波長変換部材に対して前記一次光を照射する半導体発光素子を備えることを特徴とする光源モジュール。
A wavelength conversion member according to any one of claims 1 to 4;
A light source module comprising a semiconductor light emitting element for emitting the primary light to the wavelength conversion member.
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