JP2019039928A - Current sensor, current measuring module, and smart meter - Google Patents

Abstract

To provide a current sensor, a current measurement module, and a smart meter capable of enabling high accuracy measurement over a wide measuring range with low power consumption.SOLUTION: A current sensor comprises: a plurality of magneto-resistive elements; and a first magnetic body. Resistance values of the plurality of magneto-resistive elements change by applying an induction field to each of the plurality of magneto-resistive elements from measuring target current. The first magnetic body applies a first offset magnetic field to a first magneto-resistive element among the plurality of magneto-resistive elements generally in parallel to the induction field. Furthermore, a smart meter according to one embodiment of the present invention mounts therein, for example, the current sensor according to the present embodiment.SELECTED DRAWING: Figure 1

Description

  The present embodiment relates to a current sensor, a current measurement module, and a smart meter equipped with the current sensor.

  In recent years, for the purpose of stabilizing and improving power supply and demand, the introduction of smart meters, which are next-generation watt-hour meters that measure power digitally and have a communication function in the meter, is being promoted. There is a need for a current sensor that achieves the wide dynamic range and high resolution required by smart meters with low power consumption.

  In order to realize a high-resolution current sensor, it is effective to use a magnetoresistive element having high sensitivity to a magnetic field. In order to achieve both high resolution and a wide dynamic range, a magnetic balance type current sensor using a magnetoresistive element has been proposed. However, in the magnetic balance method, it is necessary to generate a cancel magnetic field in the coil that is about the same as a large induction magnetic field generated by the current to be measured when the current to be measured becomes large. In this case, the current that flows through the coil to generate the canceling magnetic field increases in proportion to the magnitude of the current to be measured, so that in the case of a large current to be measured, the power consumption of the current sensor itself increases. There's a problem.

Japanese Patent No. 5250109

  An object of the current sensor, the current measurement module, and the smart meter according to the present embodiment is to provide a current sensor, a current measurement module, and a smart meter that enable high-precision measurement over a wide measurement range with low power consumption. .

  A current sensor according to an embodiment of the present invention includes a plurality of magnetoresistive elements and a first magnetic body. The resistance values of the plurality of magnetoresistive elements change when an induced magnetic field is applied from the current to be measured. The first magnetic body applies a first offset magnetic field substantially parallel to the induced magnetic field applied to the first magnetoresistive element among the plurality of magnetoresistive elements. Moreover, the smart meter which concerns on one embodiment of this invention mounts the current sensor which concerns on this embodiment, for example.

It is the schematic which shows the structural example of the current sensor which concerns on 1st Embodiment. FIG. 3 is a schematic perspective view illustrating a schematic configuration of a magnetoresistive element according to the same embodiment. It is a schematic diagram for demonstrating the function of the magnetoresistive element based on the embodiment. It is a schematic diagram explaining realization of high resolution and a wide dynamic range by the current sensor according to the embodiment. It is a typical perspective view which illustrates the magnetoresistive element concerning the embodiment. It is a typical perspective view which illustrates the 1st magnetoresistive element 100E concerning other composition of the embodiment. It is a typical perspective view showing the 1st magnetoresistive element 100F concerning other composition of the embodiment. 3 is a schematic diagram of a first magnetoresistive element 100 and a first offset magnetic body 150A according to the same embodiment. FIG. It is a schematic diagram of the 1st magnetoresistive element 100 and the 1st offset magnetic body 150B which concern on the embodiment. It is a schematic diagram which shows the structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram which shows the other structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram which shows the other structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram which shows the other structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram which shows the other structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram which shows the structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram of the 1st magnetoresistive element 100 and the 1st offset magnetic body 150G which concern on the embodiment. It is a typical perspective view which illustrates the manufacturing method of the current sensor which concerns on the same embodiment. It is a typical perspective view which illustrates another manufacturing method of the current sensor concerning the embodiment. It is a schematic diagram which shows the other structural example of the current sensor which concerns on the same embodiment. It is a schematic diagram which shows the structure of the current sensor which concerns on 2nd Embodiment. It is a schematic diagram which shows the structure of the current sensor which concerns on the other structure of the embodiment. It is a schematic diagram which shows the structure of the current sensor which concerns on the other structure of the embodiment. It is a schematic diagram which shows the structure of the current sensor which concerns on 3rd Embodiment. It is the schematic which shows the structure of the current sensor which concerns on 4th Embodiment. It is a circuit block diagram which shows the structure of the current sensor which concerns on 5th Embodiment. It is a circuit diagram which shows the structure of the comparator 630 of the current sensor which concerns on the same embodiment. It is a graph which shows the characteristic of the several magnetoresistive element 610 for a measurement and reference magnetoresistive element 620 of the current sensor which concerns on the same embodiment. It is a truth table of the control signal of the current sensor according to the same embodiment. It is a circuit block diagram for demonstrating operation | movement of the memory 680 of the current sensor which concerns on the embodiment. It is a circuit block diagram which shows the structure of the current sensor which concerns on 6th Embodiment. It is a circuit diagram which shows the structure of the comparator 639 of the current sensor which concerns on the embodiment. It is a graph which shows the characteristic of the several magnetoresistive element 610 for a measurement of the current sensor which concerns on the same embodiment. It is a circuit diagram which shows the structural example of the magnetoresistive element 610 for a measurement of the same current sensor. It is a schematic diagram which shows the external appearance of the smart meter 700 which concerns on embodiment. 2 is a functional block diagram showing a schematic configuration of the smart meter 700. FIG. 4 is a schematic diagram showing an example of arrangement of a current sensor 600 inside a housing 710 of the smart meter 700. FIG. It is a schematic diagram which shows the example of arrangement | positioning. FIG. 10 is a schematic diagram showing another arrangement example of the current sensor 600 inside the housing 710 of the smart meter 700. It is a schematic diagram which shows the example of arrangement | positioning. FIG. 10 is a schematic diagram showing another arrangement example of the current sensor 600 inside the housing 710 of the smart meter 700. It is a schematic diagram which shows the example of arrangement | positioning. FIG. 10 is a schematic diagram showing another arrangement example of the current sensor 600 inside the housing 710 of the smart meter 700. It is a schematic diagram which shows the example of arrangement | positioning. It is a schematic diagram of the household appliance which mounts the current sensor which concerns on either of said each embodiment.

[1. Current sensor according to first embodiment]
[1-1. overall structure]
FIGS. 1A and 1B are schematic views illustrating a configuration example of a current sensor according to the first embodiment. The current sensor shown in FIG. 1A is arranged in the vicinity of the wiring 500, and the first magnetoresistive element 100 and the second magnetic resistance whose resistance values change by applying an induction magnetic field from the measurement current flowing through the wiring 500. The resistor element 200 and the first offset magnetic body 150 are included. The first magnetoresistive element 100 and the second magnetoresistive element 200 have first magnetic layers 101 and 201 and magnetization fixed layers 102 and 202 that operate as magnetization free layers, respectively. The first offset magnetic body 150 applies a first offset magnetic field to the first magnetoresistive element 100 from a direction substantially parallel to the induced magnetic field from the measurement current. By using such a current sensor, highly accurate measurement can be realized with low power consumption for a wide range of current values.

  Also, the current sensor shown in FIG. 1B is disposed in the vicinity of the wiring 500, and the first magnetoresistive element 100 and the second magnetoresistive element 100 whose resistance values are changed by application of an induction magnetic field from the measurement current flowing through the wiring 500 are illustrated. The magnetoresistive element 200, the first offset magnetic body 150, and the second offset magnetic body 250 are included. The first offset magnetic body 150 applies a first offset magnetic field to the first magnetoresistive element 100 from a direction substantially parallel to the induced magnetic field from the measurement current. The second offset magnetic body 250 applies a second offset magnetic field to the second magnetoresistive element 200 from a direction substantially parallel to the induced magnetic field from the measurement current. The strength of the first offset magnetic field applied to the first magnetoresistive element 100 and the second offset magnetic field applied to the second magnetoresistive element 200 are different. By using such a current sensor, highly accurate measurement can be realized with low power consumption for a wide range of current values.

  In the current sensors of FIGS. 1A and 1B, the magnetoresistive elements 100 and 200 to which two different offset magnetic fields are applied are illustrated, but magnetoresistive elements to which three or more different offset magnetic fields are applied are used. May be. The number of magnetoresistive elements in which the offset magnetic field is changed can be appropriately adjusted according to the current range to be measured and the required measurement resolution.

  Moreover, you may use the current sensor which combined Fig.1 (a) and FIG.1 (b). That is, a magnetoresistive element to which no offset magnetic field is applied and a magnetoresistive element to which two or more different offset magnetic fields are applied may be used. 1A and 1B do not illustrate a current detection circuit or the like, but these circuits and the like can be appropriately changed.

[1-2. Operating principle]
FIG. 2 is a schematic perspective view illustrating a schematic configuration of the magnetoresistive element used in the present embodiment. For example, the first magnetoresistive element 100 includes a first magnetic layer 101, a second magnetic layer 102, an intermediate layer 103 provided between the first magnetic layer and the second magnetic layer, an electrode layer (not shown), including. The second magnetoresistive element 200 is configured in substantially the same manner as the first magnetoresistive element 100.

  The intermediate layer 103 is a nonmagnetic layer. The first magnetic layer 101 is, for example, a magnetization free layer whose magnetization changes freely. The second magnetic layer 102 is, for example, a magnetization fixed layer whose magnetization is fixed.

  The first magnetoresistive element 100 is a GMR (Giant Magneto Resistance) element when the intermediate layer 103 is formed of a conductive material, and TMR (Tunneling Magneto Resistance) when the intermediate layer is formed of an insulating material. It is an element. When the first magnetoresistive element 100 is a GMR element, it is a CPP-GMR element in which current is passed in the direction perpendicular to the film surface, or a CIP-GMR element in which current is passed in the direction in the film plane. There may be. When the first magnetoresistive element 100 is a TMR element, a current is passed in the direction perpendicular to the film surface. The first magnetoresistive element 100 may be an AMR element.

  FIG. 3 is a schematic diagram for explaining the function of the magnetic resistance element used in the present embodiment detecting a magnetic field. Hereinafter, the case where the first magnetic layer 101 is a magnetization free layer and the second magnetic layer 102 is a magnetization fixed layer will be described as an example.

  The function of detecting the magnetic field by the magnetoresistive element is based on the “MR effect”. The “MR effect” is manifested in a laminated film of the first magnetic layer 101, the intermediate layer 103, and the second magnetic layer 102. The “MR effect” is a phenomenon in which the value of the electrical resistance of the laminated film changes due to a change in magnetization of the magnetic substance when an external magnetic field is applied to the laminated film having a magnetic substance.

  As shown in FIG. 3B, in the initial state where no induced magnetic field is applied to the first magnetoresistive element 100, the magnetization directions of the first magnetic layer 101 and the second magnetic layer 102 have a predetermined angle. The magnetization direction of the second magnetic layer 102 is fixed by an antiferromagnetic layer or the like adjacent to the stacking direction as will be described later, and the magnetization direction of the first magnetic layer 101 is, for example, a linear response magnetic body described later or the like A predetermined direction is set depending on the direction of annealing in a magnetic field.

  As shown in FIGS. 3A and 3C, the magnetization direction of the first magnetic layer 101 is changed by applying an induction magnetic field to the first magnetoresistive element 100. As a result, the relative angles of the magnetization directions of the first magnetic layer 101 and the second magnetic layer 102 change.

  When a current is passed through the first magnetoresistive element 100, a change in the relative angle of the magnetization direction appears as a resistance change. ΔR / R is referred to as “MR change rate”, where R is the resistance in the low resistance state and ΔR is the amount of change in electrical resistance that changes due to the MR effect. When a positive magnetoresistance effect is generated by the combination of the materials of the first magnetic layer 101, the intermediate layer 103, and the second magnetic layer 102, the relative angle of the magnetization direction of the first magnetic layer 101 and the second magnetic layer 102 decreases. Electric resistance decreases. On the other hand, when a negative magnetoresistance effect is generated by the combination of the materials of the first magnetic layer 101, the intermediate layer 103, and the second magnetic layer 102, the relative angle of the magnetization direction of the first magnetic layer 101 and the second magnetic layer 102 is decreased. As a result, the electrical resistance increases.

  In the example shown in FIG. 3D, the positive magnetoresistance effect is taken as an example. A magnetoresistive element such as a GMR element or a TMR element has a very large “MR change rate” and therefore has higher sensitivity to a magnetic field than a Hall element or the like. In the magnetoresistive element, as illustrated in FIG. 3D, the electric resistance against the magnetic field is set such that the minimum value of resistance is obtained when the magnetization free layer and the magnetization fixed layer are parallel, and the maximum value of resistance is obtained when the magnetization free layer is antiparallel. There is a dynamic range of resistance change. As shown in FIG. 3D, the dynamic range of the magnetoresistive element is defined by 2Hs.

[1-3. effect]
In the current sensor according to the present embodiment, high resolution and a wide dynamic range can be realized by using a plurality of magnetoresistive elements 100 and 200 with different offset magnetic fields. Moreover, since the offset magnetic field is statically applied by using a permanent magnet material as the first offset magnetic body 150, no electric power is required. Therefore, it can be realized with low power consumption.

  FIG. 4 is a schematic diagram for explaining realization of high resolution and a wide dynamic range by the current sensor according to the present embodiment. FIG. 4A shows a change in electrical resistance of the first magnetoresistive element 100 and the second magnetoresistive element 200 shown in FIG. 1A when an induced magnetic field is applied due to the current to be measured of the current sensor. Indicates. The second magnetoresistive element 200 exhibits a linear change in electric resistance with respect to positive and negative induced magnetic fields applied from the outside according to the principle shown in FIG. 3, and has high sensitivity. Hereinafter, the range of the external magnetic field in which the electric resistance changes with respect to the change of the external magnetic field is referred to as a measurement range of the magnetoresistive element. On the other hand, in the first magnetoresistive element 100, the induced magnetic field that changes the electrical resistance is offset (for example, offset) by the offset magnetic field generated by the first offset magnetic body 150. Combining two or more magnetoresistive elements as described above provides a magnetoresistive element that is sensitive to different ranges of induced magnetic fields, and the resolution of the current sensor that requires the sensitivity of each magnetoresistive element. High sensitivity can be achieved. Therefore, in the required dynamic range of the induced current, a wide dynamic range can be realized and high resolution can be realized by detecting the sensitive induced magnetic field range separately by a plurality of magnetoresistive elements. Further, since the first offset magnetic body 150 that applies an offset magnetic field to the first magnetoresistive element 100 is statically applied by using a permanent magnet material such as a hard magnetic layer (hard ferromagnetic material), this mechanism is used. The amount of power consumed by using this does not increase, and low power consumption can be realized.

  FIG. 4B shows a change in electrical resistance of the first magnetoresistive element 100 and the second magnetoresistive element 200 shown in FIG. 1B when an induced magnetic field is applied due to the current to be measured of the current sensor. Indicates. In the first and second magnetoresistive elements 100 and 200, the induced magnetic field whose electric resistance changes is offset by the offset magnetic field generated by the first offset magnetic body 150 and the second offset magnetic body 250. And providing a magnetoresistive element sensitive to different induced magnetic fields by setting the first offset magnetic field and the second offset magnetic field to be different and combining these two or more magnetoresistive elements, and The sensitivity of each magnetoresistive element can be increased in accordance with the required resolution of the current sensor. Therefore, in the required dynamic range of the induced current, a wide dynamic range can be realized and high resolution can be realized by detecting the sensitive induced magnetic field range separately by a plurality of magnetoresistive elements. Further, the first and second offset magnetic bodies 150 and 250 for applying an offset magnetic field to the first and second magnetoresistive elements 100 and 200 are made of a permanent magnet material such as a hard magnetic layer (hard ferromagnetic material). Therefore, since it is added statically, the power consumption by using this mechanism does not increase, and low power consumption can be realized.

  By using the structure shown in FIGS. 1 and 4, the first magnetoresistive element 100 and the second magnetoresistive element 200 whose resistance values are changed by application of an induced magnetic field from the current to be measured are provided. It is possible to provide a current sensor in which an intermediate value of the range of the induced magnetic field sensitive to one magnetoresistive element is different from an intermediate value of the range of the induced magnetic field sensitive to the second magnetoresistive element.

  By using the structure shown in FIGS. 1 and 4, a plurality of magnetoresistive elements whose resistance values are changed by application of an induced magnetic field from a current to be measured are provided. A current sensor can be provided in which the magnetic field varies depending on the magnetoresistive element.

[1-4. Example of magnetoresistive element configuration]
Hereinafter, a configuration example of the magnetoresistance element according to the present exemplary embodiment will be described. FIG. 5A to FIG. 5D are schematic perspective views illustrating a magnetoresistive element used in the current sensor according to this embodiment. In the following description, “material A / material B” indicates a state in which a layer of material B is provided on a layer of material A. In the following description, the first magnetoresistive element 100 will be described as an example. However, the second magnetoresistive element 200 can be configured in the same manner. It is possible to configure.

  FIG. 5A is a schematic perspective view illustrating the first magnetoresistive element 100A used in the predetermined embodiment. As shown in FIG. 5A, the first magnetoresistive element 100A includes a lower electrode E1, an underlayer 104, a pinning layer 105, a second magnetization fixed layer 106, and a magnetic coupling arranged in order. The layer 107, the second magnetic layer 102, the intermediate layer 103, the first magnetic layer 101, the cap layer 108, and the upper electrode E2 are included.

  In this example, the first magnetic layer 101 functions as a magnetization free layer, and the second magnetic layer 102 functions as a first magnetization fixed layer. The first magnetoresistive element 100A in FIG. 5A is called a bottom spin valve type.

For example, Ta / Ru is used for the underlayer 104. The thickness of this Ta layer (the length in the Z-axis direction) is, for example, 3 nm. The thickness of this Ru layer is 2 nm, for example. For the pinning layer 105, for example, an IrMn layer having a thickness of 7 nm is used. For the second magnetization fixed layer 106, for example, a Co ₇₅ Fe ₂₅ layer having a thickness of 2.5 nm is used. For the magnetic coupling layer 107, for example, a Ru layer having a thickness of 0.9 nm is used. For the first magnetization fixed layer 102, for example, a Co ₄₀ Fe ₄₀ B ₂₀ layer having a thickness of 3 nm is used. For the intermediate layer 103, for example, an MgO layer having a thickness of 1.6 nm is used. For the first magnetic layer 101, for example, Co ₄₀ Fe ₄₀ B ₂₀ / Ni ₈₀ Fe ₂₀ is used. A stack of Co ₄₀ Fe ₄₀ B ₂₀ with a thickness of 2 nm and Ni ₈₀ Fe ₂₀ with a thickness of 8 nm is used. For example, Ta / Ru is used for the cap layer 108. The thickness of this Ta layer is 1 nm, for example. The thickness of this Ru layer is 5 nm, for example.

  For example, at least one of aluminum (Al), aluminum copper alloy (Al-Cu), copper (Cu), silver (Ag), and gold (Au) is used for the lower electrode E1 and the upper electrode E2. By using such a material having a relatively small electric resistance as the lower electrode E1 and the upper electrode E2, a current can be efficiently passed through the first magnetoresistive element 100A.

  The lower electrode E1 includes at least one of Al, Al—Cu, Cu, Ag, and Au between a base layer (not shown) for the lower electrode E1 and a cap layer (not shown). You may have the structure in which the layer was provided. For example, tantalum (Ta) / copper (Cu) / tantalum (Ta) is used for the lower electrode E1. By using Ta as the base layer for the lower electrode E1, for example, the adhesion between the layers constituting the lower electrode E1 can be improved. Titanium (Ti), titanium nitride (TiN), or the like may be used as a base layer for the lower electrode E1. By using Ta as the cap layer for the lower electrode E1, oxidation of copper (Cu) or the like under the cap layer can be prevented. As the cap layer for the lower electrode E1, titanium (Ti), titanium nitride (TiN), or the like may be used.

  As the base layer 104, a stacked structure of a buffer layer (not shown) and a seed layer (not shown) can be used. This buffer layer, for example, reduces the roughness of the surface of the lower electrode E1, and improves the crystallinity of the layer stacked on the buffer layer. As the buffer layer, for example, at least one selected from the group consisting of tantalum (Ta), titanium (Ti), vanadium (V), tungsten (W), zirconium (Zr), hafnium (Hf), and chromium (Cr) Is used. An alloy containing at least one material selected from these materials may be used as the buffer layer.

  The thickness of the buffer layer is preferably 1 nm or more and 10 nm or less. The thickness of the buffer layer is more preferably 1 nm or more and 5 nm or less. If the buffer layer is too thin, the buffer effect is lost. If the buffer layer is too thick, the first magnetoresistive element 100A becomes excessively thick. A seed layer is formed on the buffer layer, and the seed layer may have a buffer effect. The buffer layer may be omitted. As the buffer layer, for example, a Ta layer having a thickness of 3 nm is used.

  A seed layer (not shown) controls the crystal orientation of a layer stacked on the seed layer. The seed layer controls the crystal grain size of the layer stacked on the seed layer. As seed layer, fcc structure (Face-Centered Cubic Structure), hcp structure (Hexagonal Close-Packed Structure) or bcc structure (Body-Centered Cubic Structure) ) Or the like is used.

  By using ruthenium (Ru) with an hcp structure, NiFe with an fcc structure, or Cu with an fcc structure as the seed layer, for example, the crystal orientation of the spin valve film on the seed layer is changed to the fcc (111) orientation. can do. For the seed layer, for example, a Cu layer having a thickness of 2 nm or a Ru layer having a thickness of 2 nm is used. In order to increase the crystal orientation of the layer formed on the seed layer, the thickness of the seed layer is preferably 1 nm or more and 5 nm or less. The thickness of the seed layer is more preferably 1 nm or more and 3 nm or less. Thereby, the function as a seed layer for improving the crystal orientation is sufficiently exhibited. On the other hand, for example, when it is not necessary to orient the layer formed on the seed layer (for example, when an amorphous magnetization free layer is formed), the seed layer may be omitted. As the seed layer, for example, a Ru layer having a thickness of 2 nm is used.

  The pinning layer 105 imparts unidirectional anisotropy to the ferromagnetic layer formed on the pinning layer 105 to fix the magnetization. In the example shown in FIG. 5A, unidirectional anisotropy is imparted to the ferromagnetic layer of the second magnetization fixed layer 106 formed on the pinning layer 105 to fix the magnetization. For the pinning layer 105, for example, an antiferromagnetic layer is used. The pinning layer 105 includes, for example, Ir—Mn, Pt—Mn, Pd—Pt—Mn, Ru—Mn, Rh—Mn, Ru—Rh—Mn, Fe—Mn, Ni—Mn, Cr—Mn—Pt and At least one selected from the group consisting of Ni-O is used. Ir—Mn, Pt—Mn, Pd—Pt—Mn, Ru—Mn, Rh—Mn, Ru—Rh—Mn, Fe—Mn, Ni—Mn, Cr—Mn—Pt and Ni—O further added elements An added alloy may be used. In order to impart sufficient strength of unidirectional anisotropy, the thickness of the pinning layer 105 is appropriately set.

  In order to fix the magnetization of the ferromagnetic layer in contact with the pinning layer 105, heat treatment is performed while applying a magnetic field. The magnetization of the ferromagnetic layer in contact with the pinning layer 105 is fixed in the direction of the magnetic field applied during the heat treatment. The annealing temperature is set to a temperature higher than the magnetization fixing temperature of the antiferromagnetic material used for the pinning layer 105, for example. In addition, when an antiferromagnetic layer containing Mn is used, Mn diffuses in a layer other than the pinning layer 105 to reduce the MR ratio. Therefore, it is desirable to set it below the temperature at which Mn diffusion occurs. For example, it can be set to 200 ° C. or more and 500 ° C. or less. Preferably, it can be set to 250 ° C. or more and 400 ° C. or less.

When Pt—Mn or Pd—Pt—Mn is used as the pinning layer 105, the thickness of the pinning layer 105 is preferably 8 nm or more and 20 nm or less. The thickness of the pinning layer 105 is more preferably 10 nm or more and 15 nm or less. In the case where IrMn is used as the pinning layer 105, unidirectional anisotropy can be imparted with the pinning layer 105 thinner than in the case where PtMn is used as the pinning layer 105. In this case, the thickness of the pinning layer 105 is preferably 4 nm or more and 18 nm or less. The thickness of the pinning layer 105 is more preferably 5 nm or more and 15 nm or less. For the pinning layer 105, for example, an Ir ₂₂ Mn ₇₈ layer having a thickness of 7 nm is used. When the Ir ₂₂ Mn ₇₈ layer is used, the heat treatment can be performed at 320 ° C. for one hour while applying a magnetic field of 10 kOe as the heat treatment condition in the magnetic field. When the Pt ₅₀ Mn ₅₀ layer is used, the heat treatment can be performed at 320- ° C. for 10 hours while applying a magnetic field of 10 kOe as a heat treatment condition in the magnetic field.

  The second magnetization fixed layer 106 may be, for example, at least one of Fe, Co, and Ni, or an alloy containing at least one of these. Moreover, it can also be set as the material which added the additive element to these materials.

The second magnetization fixed layer 106 includes, for example, a Co _x Fe _100-x alloy (x is 0 at.% Or more and 100 at.% Or less), a Ni _x Fe _100-x alloy (x is 0 at.% Or more and 100 at.% Or less). Or the material which added the nonmagnetic element to these is used. As the second magnetization fixed layer 106, for example, at least one selected from the group consisting of Co, Fe, and Ni is used. As the second magnetization fixed layer 106, an alloy containing at least one material selected from these materials may be used.

  The thickness of the second magnetization fixed layer 106 is preferably 1.5 nm or more and 5 nm or less, for example. Thereby, for example, the strength of the unidirectional anisotropic magnetic field by the pinning layer 105 can be further increased. For example, the strength of the antiferromagnetic coupling magnetic field between the second magnetization fixed layer 106 and the first magnetization fixed layer 102 is increased through the magnetic coupling layer 107 formed on the second magnetization fixed layer 106. be able to. The magnetic film thickness of the second magnetization fixed layer 106 (the product of the saturation magnetization Bs and the thickness t (Bs · t)) is preferably substantially equal to the magnetic film thickness of the first magnetization fixed layer 102.

The saturation magnetization of Co ₄₀ Fe ₄₀ B _{20 in} the thin film is about 1.9 T (Tesla). For example, when a Co ₄₀ Fe ₄₀ B ₂₀ layer having a thickness of 3 nm is used as the first magnetization fixed layer 102, the magnetic film thickness of the first magnetization fixed layer 102 is 1.9T × 3 nm, and 7 Tnm. On the other hand, the saturation magnetization of Co ₇₅ Fe ₂₅ is about 2.1T. The thickness of the second magnetization fixed layer 106 capable of obtaining a magnetic film thickness equal to the above is 5.7 Tnm / 2.1T, which is 2.7 nm. In this case, it is preferable to use Co ₇₅ Fe ₂₅ having a thickness of about 2.7 nm for the second magnetization fixed layer 106. As the second magnetization fixed layer 106, for example, a Co ₇₅ Fe ₂₅ layer having a thickness of 2.5 nm is used.

In the first magnetoresistance element 100A shown in FIG. 5A, a synthetic pin structure of the second magnetization fixed layer 106, the magnetic coupling layer 107, and the first magnetization fixed layer 102 is used. Instead, a single pin structure composed of a single magnetization fixed layer may be used. When the single pin structure is used, for example, a Co ₄₀ Fe ₄₀ B ₂₀ layer having a thickness of 3 nm is used as the magnetization fixed layer. As the ferromagnetic layer used for the single pinned magnetization fixed layer, the same material as that of the first magnetization fixed layer 102 described later may be used.

  The magnetic coupling layer 107 generates antiferromagnetic coupling between the second magnetization fixed layer 106 and the first magnetization fixed layer 102. The magnetic coupling layer 107 forms a synthetic pin structure. For example, Ru is used as the magnetic coupling layer 107. The thickness of the magnetic coupling layer 107 is preferably 0.8 nm or more and 1 nm or less. Any material other than Ru may be used for the magnetic coupling layer 107 as long as the material generates sufficient antiferromagnetic coupling between the second magnetization fixed layer 106 and the first magnetization fixed layer 102. The thickness of the magnetic coupling layer 107 can be set to a thickness of 0.8 nm or more and 1 nm or less corresponding to a second peak (2nd peak) of RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling. Furthermore, the thickness of the magnetic coupling layer 107 may be set to a thickness of 0.3 nm or more and 0.6 nm or less corresponding to the first peak (1st peak) of the RKKY coupling. As the magnetic coupling layer 107, for example, Ru having a thickness of 0.9 nm is used. Thereby, highly reliable coupling can be obtained more stably.

  The first magnetization fixed layer can be, for example, at least one of Fe, Co, and Ni, or an alloy containing at least one of these. Moreover, it can also be set as the material which added the additive element to these materials.

The magnetic layer used for the first magnetization fixed layer 102 directly contributes to the MR effect. For example, a Co—Fe—B alloy is used as the first magnetization fixed layer 102. Specifically, as the first magnetization fixed layer 102, a (Co _x Fe _100-x ) _{100- y By} alloy (x is 0 at.% To 100 at.%, Y is 0 at.% To 30 at.%) Can also be used. The first magnetization pinned layer _102, in the case of using the _{(Co x Fe 100-x)} 100-y B y of the amorphous alloy, for example, in a case where the size of the magnetoresistive element is smaller, due to the grain element Variations between them can be suppressed. When an amorphous alloy is used as the first magnetization fixed layer 102, a layer (for example, a tunnel insulating layer) formed on the first magnetization fixed layer 102 can be planarized. By planarizing the tunnel insulating layer, the defect density of the tunnel insulating layer can be reduced. For example, in the case of using MgO as a material of the tunnel insulating _{layer, (Co x Fe 100-x} ) By using the amorphous alloy _{100-y B y,} the MgO layer formed on the tunnel insulating layer (100 ) The orientation can be strengthened. By increasing the (100) orientation of the MgO layer, a higher MR ratio can be obtained. The (Co _x Fe _100-x ) _100-y B _y alloy crystallizes using the (100) plane of the MgO layer as a template during annealing. Therefore, good crystal matching between MgO and _{(Co x Fe 100-x)} 100-y B y alloys are obtained. By obtaining good crystal matching, a higher MR ratio can be obtained. As the first magnetization fixed layer 102, for example, an Fe—Co alloy may be used in addition to the Co—Fe—B alloy.

  When the first magnetization fixed layer 102 is thicker, a larger MR change rate is obtained. In order to obtain a larger fixed magnetic field, the first magnetization fixed layer 102 is preferably thin. A trade-off relationship exists in the thickness of the first magnetization fixed layer 102 between the MR change rate and the fixed magnetic field. When a Co—Fe—B alloy is used as the first magnetization fixed layer 102, the thickness of the first magnetization fixed layer 102 is preferably 1.5 nm or more and 5 nm or less. The thickness of the first magnetization fixed layer 102 is more preferably 2.0 nm or more and 4 nm or less.

In addition to the materials described above, the first magnetization fixed layer 102 (second magnetic layer 20) is made of an fcc-structured Co ₉₀ Fe ₁₀ alloy, an hcp-structure Co, or an hcp-structure Co alloy. As the first magnetization fixed layer 102, at least one selected from the group consisting of Co, Fe, and Ni is used. As the first magnetization fixed layer 102, an alloy containing at least one material selected from these materials is used. As the first magnetization fixed layer 102, an FeCo alloy material having a bcc structure, 50 at. % Co alloy containing cobalt composition of 50% or more, or 50 at. By using a material having a Ni composition of at least%, for example, a larger MR change rate can be obtained. As the first magnetization fixed layer 102, Co ₂ MnGe, Co ₂ FeGe, Co ₂ MnSi, Co ₂ FeSi, Co ₂ MnAl, Co ₂ FeAl, Co ₂ MnGa _0.5 Ge _0.5 , and Co ₂ FeGa _0. A Heusler magnetic alloy layer such as ₅ Ge _0.5 can also be used. For example, a Co ₄₀ Fe ₄₀ B ₂₀ layer having a thickness of 3 nm is used as the first magnetization fixed layer 102.

The intermediate layer 103 breaks the magnetic coupling between the first magnetization fixed layer 102 and the first magnetic layer 101. For the intermediate layer 103, a metal, an insulator, or a semiconductor is used. When a metal is used for the intermediate layer 103, for example, Cu, Au, Ag, or the like is used. In this case, the thickness of the intermediate layer 103 is, for example, about 1 nm to 7 nm. In the case where an insulator or a semiconductor is used as the intermediate layer 103, for example, magnesium oxide (Mg—O or the like), aluminum oxide (Al ₂ O ₃ or the like), titanium oxide (Ti—O or the like), zinc oxide (Zn) -O or the like) or gallium oxide (Ga-O) or the like is used. In this case, the thickness of the intermediate layer 103 is, for example, about 0.6 nm to 5 nm.

  The material of the first magnetic layer 101 can be, for example, at least one of Fe, Co, and Ni, or an alloy containing at least one of these. Moreover, it can also be set as the material which added the additive element to these materials. The first magnetic layer is a layer having a ferromagnetic material whose magnetization direction is changed by an external magnetic field. In addition, B, Al, Si, Mg, C, Ti, V, Cr, Mn, Cu, Zn, Ga, Zr, Hf, etc. may be added to these metals and alloys as additive elements and ultrathin layers. it can. In addition to the crystalline magnetic layer, an amorphous magnetic layer can also be used.

It is also possible to use an oxide or nitride magnetic layer. For example, a two-layer structure of Co ₉₀ Fe ₁₀ [1 nm] / Ni ₈₀ Fe ₂₀ [3.5 nm] using NiFe by forming CoFe at the interface can be used. In the case where the NiFe layer is not used, a Co ₉₀ Fe ₁₀ [4 nm] single layer can be used. The first magnetic layer 101 may have a three-layer structure such as CoFe / NiFe / CoFe.

The first magnetic layer 101 is preferably Co ₉₀ Fe ₁₀ among the CoFe alloys because the soft magnetic properties are stable. When a CoFe alloy near Co ₉₀ Fe ₁₀ is used, the film thickness is preferably 0.5 nm or more and 4 nm or less. In addition, Co _x Fe _100-x (x = 70 at.% To 90 at.%) Can also be used.

Further, in the TMR element using MgO in the intermediate layer, as the material of the first magnetic _{layer, (Co x Fe 100-x} ) 100-y B y alloys (x = 0at.% ~100at. %, Y = 0at. % To 30 at.%) Is preferred. _{(Co x Fe 100-x)} 100 - y B y alloys to crystallize the MgO (100) plane as a template during annealing, MgO and _{(Co x Fe 100-x)} 100 - good crystal y _{B y} alloys Match can be obtained. Such good crystal matching is important from the viewpoint of obtaining a high MR ratio. On the other hand, when a Co—Fe—B alloy is used for the first magnetic layer, a laminate with a Ni—Fe alloy is preferable from the viewpoint of improving soft magnetic properties. For example, Co ₄₀ Fe ₄₀ B ₂₀ [2 nm] / Ni ₈₀ Fe ₂₀ [8 nm] can be used. Here, from the viewpoint of obtaining a high MR ratio, the Co—Fe—B layer is preferably disposed on the intermediate layer side. In addition, when the crystal matching between the Co ₄₀ Fe ₄₀ B ₂₀ layer and the Ni ₈₀ Fe ₂₀ layer is cut, the Co ₄₀ Fe ₄₀ B ₂₀ layer can obtain a good orientation using the MgO intermediate layer as a template. The nonmagnetic metal may be inserted between them. Alternatively, a stacked body of a Co—Fe—B layer and a Ni—Fe—B layer may be used.

  The cap layer 108 protects a layer provided under the cap layer 108. For the cap layer 108, for example, a plurality of metal layers are used. For example, a nonmagnetic metal can be used for the cap layer 108. For the cap layer 108, for example, a two-layer structure (Ta / Ru) of a Ta layer and a Ru layer is used. The thickness of the Ta layer is 1 nm, for example, and the thickness of the Ru layer is 5 nm, for example. As the cap layer 108, another metal layer may be provided instead of the Ta layer or the Ru layer. The configuration of the cap layer 108 is arbitrary. For the cap layer 108, for example, a nonmagnetic material can be used. As long as the layer provided under the cap layer 108 can be protected, other materials may be used for the cap layer 108.

  FIG. 5B is a schematic perspective view illustrating the first magnetoresistance element 100B used in another embodiment. As shown in FIG. 5B, the first magnetoresistive element 100B includes a lower electrode E1, an underlayer 104, a first magnetic layer 101, an intermediate layer 103, and a second magnetic element arranged in order. The layer 102, the magnetic coupling layer 107, the second magnetization fixed layer 106, the pinning layer 105, the cap layer 108, and the upper electrode E2 are included.

  In this example, the first magnetic layer 101 functions as a magnetization free layer, and the second magnetic layer 102 functions as a first magnetization fixed layer. The first magnetoresistive element 100B in FIG. 5B is called a top spin valve type. For each of the layers included in the first magnetoresistive element 100B, for example, the materials described for the magnetoresistive element shown in FIG.

  FIG. 5C is a schematic perspective view illustrating the first magnetoresistive element 100C used in another embodiment. As shown in FIG. 5C, the first magnetoresistive element 100C includes a lower electrode E1, a base layer 104, a lower pinning layer 105a, a lower second magnetization fixed layer 106a, Lower magnetic coupling layer 107a, lower second magnetic layer 102a, lower intermediate layer 103a, first magnetic layer 101, upper intermediate layer 103b, upper second magnetic layer 102b, upper magnetic coupling layer 107b, upper The second magnetization fixed layer 106b, the upper pinning layer 105b, the cap layer 108, and the upper electrode E2 are included.

  In this example, the first magnetic layer 101 functions as a magnetization free layer, the lower second magnetic layer 102a functions as a lower first magnetization fixed layer 102a, and the upper second magnetic layer 102b functions as an upper first magnetization fixed layer. To do. In the already described first magnetoresistive element 100A shown in FIG. 5A and the first magnetoresistive element 100B shown in FIG. 5B, one surface side of the first magnetic layer 101 which is a magnetization free layer is provided. The second magnetic layer 102, which is a magnetization fixed layer, is disposed. On the other hand, in the first magnetoresistive element 100C shown in FIG. 5C, a magnetization free layer is disposed between two magnetization fixed layers. The first magnetoresistive element 100C shown in FIG. 5C is called a dual spin valve type. For each of the layers included in the first magnetoresistive element 100C shown in FIG. 5C, for example, the materials described for the first magnetoresistive element 100A shown in FIG. 5A can be used.

  FIG. 5D is a schematic perspective view illustrating a first magnetoresistive element 100D used in another embodiment. As shown in FIG. 5D, the first magnetoresistive element 100D includes the lower electrode E1, the underlayer 104, the pinning layer 105, the second magnetic layer 102, and the intermediate layer 103, which are arranged in order. A first magnetic layer 101, a cap layer 108, and an upper electrode E2.

  In this example, the first magnetic layer 101 functions as a magnetization free layer, and the second magnetic layer 102 functions as a magnetization fixed layer. In the first magnetoresistive element 100A shown in FIG. 5A and the first magnetoresistive element 100B shown in FIG. 5B, the second magnetization fixed layer 106, the magnetic coupling layer 107, the first A structure using the second magnetic layer 102 functioning as a single magnetization fixed layer is applied. On the other hand, in the first magnetoresistance element 100D shown in FIG. 5D, a single pin structure using a single magnetization fixed layer 24 is applied. For each of the layers included in the first magnetoresistive element 100D shown in FIG. 5D, for example, the materials described for the first magnetoresistive element 100A shown in FIG. 5A can be used.

  FIG. 6 is a schematic perspective view illustrating the first magnetoresistance element 100E according to another configuration. As shown in FIG. 6, the insulating layer 109 is provided in the first magnetoresistive element 100E. That is, two insulating layers (insulating portions) 109 that are separated from each other are provided between the lower electrode E1 and the upper electrode E2, and the base layer 104, the pinning layer 105, and the second magnetization fixed layer are provided therebetween. A laminated body including 106, a magnetic coupling layer 107, a second magnetic layer 102, an intermediate layer 103, a magnetization free layer 101, and a cap layer 108 is provided.

In this example, the first magnetic layer 101 functions as a magnetization free layer, and the second magnetic layer 102 functions as a first magnetization fixed layer. For each of the layers included in the first magnetoresistive element 100E, for example, the materials described for the magnetoresistive element shown in FIG. For the insulating layer 109, for example, aluminum oxide (eg, Al ₂ O ₃ ), silicon oxide (eg, SiO ₂ ), or the like can be used. The insulating layer 109 can suppress leakage current around the stacked body. The insulating layer 109 can be applied to any of the magnetoresistive elements shown in FIGS.

[1-5. Other configuration examples of magnetoresistive element]
FIG. 7A is a schematic perspective view showing a first magnetoresistive element 100F according to another configuration. The first magnetoresistive element 100F shown in FIG. 7A is called a granular type magnetoresistive element, and has a structure in which fine particles of magnetic material are three-dimensionally dispersed in a mother layer (matrix), and a side of this structure. And a pair of electrodes E provided in the part. When the mother layer is a conductor, it is called a granular type GMR element, and when it is an insulator, it is called a granular type TMR element.

  As shown in FIG. 7C, in the state without an external magnetic field, the magnetization direction of the magnetic particles dispersed three-dimensionally is random three-dimensionally, as shown in FIGS. 7B and 7D. As shown, when an external magnetic field is applied, they are aligned in one direction. As shown in FIG. 7E, the electric resistance changes according to the relative angle of the dispersed magnetic particles. This MR phenomenon is based on the same principle as the above-described stacked GMR element and TMR element. The first magnetoresistive element 100F has advantages such as being easier to manufacture than the stacked type.

The magnetic particles used in the first magnetoresistive element 100F correspond to the magnetization free layer in the multilayer magnetoresistive element described above. As a material used for the magnetic particles, for example, at least one of Fe, Co, and Ni, or an alloy containing at least one of them can be used. Further, B, Al, Si, Mg, C, Ti, V, Cr, Mn, Cu, Zn, Ga, Zr, Hf, and the like can be added to these metals and alloys as additive elements. For example, magnetic particles made of Co ₉₀ Fe ₁₀ can be used.

As a matrix of the first magnetoresistive element 100F, in the case of a granular type TMR element, as an insulating material or a semiconductor material, magnesium oxide (Mg—O or the like), aluminum oxide (Al ₂ O ₃ or the like), titanium An oxide (Ti—O or the like), zinc oxide (Zn—O or the like), gallium oxide (Ga—O), or the like is used. On the other hand, in the case of a granular type GMR element, a metal such as Cu, Ag, Au, Al, Cr, Ru can be used as the conductor material.

  The first magnetoresistive element 100F is formed as a CIP element in which the electrode E is provided on the side wall and energizes in the in-plane direction of the film. It is also possible to use a CPP element that performs the above.

[1-6. Horizontally offset magnetic material]
Next, the relationship between the magnetoresistive element and the offset magnetic body when the offset magnetic body is disposed adjacent to the magnetoresistive element will be described. In the following description, the first magnetoresistive element 100 and the first offset magnetic body 150 will be described as an example. However, the second magnetoresistive element 200, the second offset magnetic body 250, and the like may be configured similarly. Is possible.

  FIG. 8 shows a schematic diagram of the first magnetoresistive element 100 and the first offset magnetic body 150A. The first offset magnetic body 150 </ b> A is an aspect of the first offset magnetic body 150.

  The first offset magnetic body 150A is disposed adjacent to the first magnetic layer 101, the second magnetic layer 102, and the intermediate layer 103 in the first magnetoresistive element 100, and the first magnetic layer 101 and the second magnetic layer. An offset magnetic field is applied to 102 and the intermediate layer 103. The first offset magnetic body 150A is provided between the lower electrode E1 and the upper electrode E2. Further, for example, an insulating layer 109 is disposed between the first offset magnetic body 150A and the first magnetoresistive element 100. In this example, the insulating layer 109 extends between the first offset magnetic body 150A and the lower electrode E1.

  In FIG. 8A, one first offset magnetic body 150 </ b> A is provided for one first magnetoresistive element 100. On the other hand, a pair of first offset magnetic bodies 150A may be provided so as to sandwich one first magnetoresistive element 100 as shown in FIG. Also in the specific examples described below, the pair of first offset magnetic bodies 150 is provided, but only one side may be provided.

  As shown in FIG. 8C, the offset magnetic field can be applied substantially parallel to the induced magnetic field applied to the first magnetoresistive element 100 by the magnetic field of the first offset magnetic body 150. Thereby, the induced magnetic field in which the resistance change of the first magnetoresistive element 100 occurs can be offset. For example, by setting the magnetization of the first offset magnetic body 150 in a direction substantially parallel to the induced magnetic field generated from the current to be measured, the induced magnetic field in which the resistance change of the first magnetoresistive element 100 occurs as shown in FIG. Can be offset.

For the first offset magnetic body 150A, for example, a hard magnetic material (hard ferromagnetic material) having a relatively high magnetic anisotropy and coercive force, such as Co—Pt, Fe—Pt, Co—Pd, and Fe—Pd, is used. Used. Alternatively, an alloy obtained by further adding an additive element to Co—Pt, Fe—Pt, Co—Pd, or Fe—Pd may be used. For example, CoPt (ratio of Co is, 50at.% Or more 85 at.% Or _{less), (Co x Pt 100-} x) 100-y Cr y (x is 50at.% Or more 85 at.% Or less, y is 0 atomic.% Or more 40 at.% Or less) or FePt (the ratio of Pt is 40 at.% To 60 at.%) May be used. When such a material is used, the magnetization direction of the first offset magnetic body 150A is set (fixed) in the direction in which the external magnetic field is applied by applying an external magnetic field larger than the coercive force of the offset magnetic body 150A. be able to. The thickness (for example, the length along the direction from the lower electrode E1 to the upper electrode E2) of the first offset magnetic body 150A is, for example, 5 nm or more and 50 nm or less.

As shown in FIG. 8A, when the insulating layer 109 is disposed between the first offset magnetic body 150A and the lower electrode E1, SiO _x or AlO _x can be used as the material of the insulating layer 109. . Furthermore, an offset magnetic underlayer (not shown) may be provided between the insulating layer 109 and the first offset magnetic body 150A. When a hard ferromagnetic material having a relatively high magnetic anisotropy and coercive force, such as Co—Pt, Fe—Pt, Co—Pd, and Fe—Pd, is used for the offset magnetic body 150A, the material for the offset magnetic underlayer For example, Cr or Fe—Co can be used. The first offset magnetic body 150A can be applied to any of the first magnetoresistive elements 100 described above and below.

The first offset magnetic body 150A may have a structure laminated on a pinning layer for offset magnetic body (not shown). In this case, the magnetization direction of the first offset magnetic body 150A can be set (fixed) by exchange coupling between the first offset magnetic body 150A and the offset magnetic body pinning layer. In this case, for the first offset magnetic body 150A, a ferromagnetic material made of at least one of Fe, Co, and Ni, or an alloy containing at least one of them can be used. In this case, examples of the first offset magnetic body 150A include a Co _x Fe _100-x alloy (x is 0 at.% To 100 at.%), A Ni _x Fe _100-x alloy (x is 0 at.% To _{100 at} .%). .% Or less), or a material obtained by adding a non-magnetic element to these can be used. As the first offset magnetic body 150A, the same material as that of the second magnetic layer 102 described above can be used. For the offset magnetic pinning layer, the same material as the pinning layer 105 of the magnetoresistive element described above can be used. When the offset magnetic pinning layer is provided, an underlayer similar to the material described for the underlayer 104 may be provided under the offset magnetic pinning layer. Further, the offset magnetic pinning layer may be provided in the lower part of the first offset magnetic substance 150A or may be provided in the upper part. In this case, the magnetization direction of the first offset magnetic body 150A can be determined by heat treatment in a magnetic field as described in the pinning layer of the magnetoresistive element.

  The first offset magnetic body 150A can be applied to both the first magnetoresistive element 100 and the first magnetoresistive element 100 described below. When the laminated structure of the first offset magnetic body 150A and the offset magnetic body pinning layer as described above is used, a large current instantaneously flows as a current to be measured, and a large induced magnetic field flows into the first offset magnetic body 150A. Even when added, the magnetization direction of the first offset magnetic body 150A can be easily maintained.

  FIG. 9 shows a schematic diagram of the first magnetoresistive element 100 and the first offset magnetic body 150B. The first offset magnetic body 150B is another embodiment of the first offset magnetic body 150.

  In FIG. 8, the first offset magnetic body 150A is disposed adjacent to the side of the first magnetoresistive element 100. However, as shown in FIG. 9, the first offset magnetic body 150B is replaced with the first magnetoresistive element. It may be provided obliquely above the element 100. Also in this case, as shown in FIG. 9A, one first offset magnetic body 150B may be provided for one first magnetoresistive element 100, or as shown in FIG. A pair of first offset magnetic bodies 150B may be provided so as to sandwich one first magnetoresistive element 100. As shown in FIG. 9, even when the first offset magnetic body 150B is provided obliquely upward, the leakage magnetic field from the offset magnet leaks with a certain distribution as well as just beside it. As shown, an offset magnetic field can be applied to the first magnetoresistive element 100.

Here, the offset magnetic field H _offset of the magnetoresistive element can be adjusted by the configuration of the first offset magnetic body 150A and the like. FIGS. 10A to 10C show examples in which a difference is provided in the configuration of the first offset magnetic body 150 and the second offset magnetic body 250 in order to obtain different offset magnetic fields for the two magnetoresistive elements. Show. In FIGS. 10A to 10C, two magnetoresistive elements are taken as an example, but three or more magnetoresistive elements may be used. FIG. 10 illustrates an example in which the first or second offset magnetic bodies 150A and 250A are provided adjacent to the side of the magnetoresistive element as shown in FIG. Even when the first or second offset magnetic body 150B, 250B is provided on the oblique side of the magnetoresistive element as shown in FIG.

As shown in FIG. 10A, the offset magnetic field can be changed by changing the distance between the magnetoresistive element and the first and second offset magnetic bodies 150A and 250A. The sum L _1a + L _1b of the distance between each of the first magnetoresistive element 100 and the pair of first offset magnetic bodies 150A shown in FIG. 10A is equal to the second magnetoresistive element 200 and the pair of first offset magnetic bodies 150A. It is set to be larger than the sum L _2a + L _2b of the distances of the two offset magnetic bodies 250A. In this case, the greater the distance from the first or second offset magnetic body 150A, 250A, the smaller the magnetic field applied to the first or second magnetoresistive element 100, 200. Therefore, the first and second magnetoresistive elements The offset magnetic field H _{offset of} 100 and 200 becomes small.

As shown in FIG. 10B, the offset magnetic field can be changed by changing the area of the first offset magnetic body 150A on the substrate plane and the area of the second offset magnetic body 250A on the second substrate plane. It is. The area sum S _1a + S _1b of each of the pair of first offset magnetic bodies 150A shown in FIG. 10B is smaller than the area sum S _2a + S _2b of each of the pair of second offset magnetic bodies 250A. Is set. In this case, since the magnetic volume of the first or second offset magnetic body 150A, 250A increases as the area of the first or second offset magnetic body 150A, 250A increases, the first or second magnetoresistive element The magnetic field applied to 100, 200 increases, and the offset magnetic field of the first or second magnetoresistive element 100, 200 increases.

As shown in FIG. 10C, the offset magnetic field can be changed by changing the film thickness of the first and second offset magnetic bodies 150A and 250A. The sum t _1a + t _1b of the film thicknesses of the pair of first offset magnetic bodies 150A shown in FIG. 10C is the sum of the film thicknesses t _2a + t _2b of the pair of second offset magnetic bodies 250A. Is set too small. In this case, since the magnetic volumes of the first and second offset magnetic bodies 150A and 250A increase as the thickness of the first and second offset magnetic bodies 150A and 250A increases, the first and second magnetoresistances The magnetic field applied to the elements 100 and 200 increases, and the offset magnetic fields of the first and second magnetoresistive elements 100 and 200 increase.

  In FIGS. 10B and 10C described above, the case where the magnetic volume is changed by changing the area or film thickness of the first and second offset magnetic bodies 150A and 250A has been described. The magnetic volume can also be changed by changing the type of magnetic material used for the second offset magnetic bodies 150A and 250A. For example, by using magnetic materials having different saturation magnetizations for the first offset magnetic body 150A and the second offset magnetic body 250A, the magnetic volume is changed, and the offsets of the first and second magnetoresistive elements 100 and 200 are changed. You can also change the magnetic field.

  FIGS. 11A to 11C are schematic views for explaining a case where an offset magnetic field is applied from a pair of first offset magnetic bodies 150C, 150D, or 150E to a plurality of magnetoresistive elements. The first offset magnetic body 150C, 150D, or 150E is another embodiment of the first offset magnetic body 150. Also with such a configuration, it is possible to change the offset magnetic field of each magnetoresistive element. 11, an example in which the current sensor includes a third magnetoresistive element 300 in addition to the first magnetoresistive element 100 and the second magnetoresistive element 200 will be described. However, the number of magnetoresistive elements may be two, or four or more.

  As shown in FIG. 11A, even if a pair of first offset magnetic bodies 150C is used for a plurality of magnetoresistive elements, the offset magnetic field of each magnetoresistive element can be changed. In FIG. 11A, the width of the first offset magnetic body 150C in the magnetization direction or the induction magnetic field direction (X direction) is equal to each of the magnetoresistive elements. The distance between each of them and the pair of first offset magnetic bodies 150C is different. By using the first offset magnetic body 150C having such a shape, the effective distance between the first offset magnetic body 150C closest to each magnetoresistive element and each magnetoresistive element is different. Therefore, as described in FIG. 10A, the offset magnetic field of each magnetoresistive element can be changed.

  As shown in FIG. 11B, even if a pair of first offset magnetic bodies 150D is used for a plurality of magnetoresistive elements, the offset magnetic field of each magnetoresistive element can be changed. In FIG. 11B, the width of the first offset magnetic body 150D in the magnetization direction or the induction magnetic field direction (X direction) is different from each other, and each of the plurality of magnetoresistive elements. And the distance between the pair of first offset magnetic bodies 150D is different. When the first offset magnetic body 150D having such a shape is used, the effective distance and area between the first offset magnetic body 150D at the position closest to each magnetoresistive element and each magnetoresistive element. Therefore, as described in FIGS. 10A and 10B, the offset magnetic field of each magnetoresistive element can be changed.

  In FIG. 11C, the distance between each of the plurality of magnetoresistive elements and the pair of first offset magnetic bodies 150E is the same, but the magnetization direction of the first offset magnetic body 150E or the direction of the induced magnetic field ( The width in the X direction differs depending on the position of the Y coordinate where each magnetoresistive element is located. By using the first offset magnetic body 150E having such a shape, the effective magnetic area of the first offset magnetic body 150E at the position closest to each magnetoresistive element is different. As described above, the offset magnetic field of each magnetoresistive element can be changed.

  In any of the offset magnetic bodies 150A to 150E described so far, a hard ferromagnetic material having a relatively high magnetic anisotropy and coercivity such as Co—Pt, Fe—Pt, Co—Pd, and Fe—Pd is used. Alternatively, a structure in which an offset magnetic body and an offset magnetic body pinning layer are stacked may be used. FIG. 12 shows an example in which offset magnetic pinning layers 159 and 259 that are in contact with the lower surfaces of the first offset magnetic body 150A and the second offset magnetic body 250A are arranged as variations of FIG. The pinning layers 159 and 259 are examples of an offset magnetic pinning layer. FIG. 12 shows a modification of FIG. 10 (a), but such a variation using the offset magnetic body and the pinning layer for the offset magnetic body can be applied to any of the examples of FIGS. Applicable. Also, the offset magnetic pinning layer may be provided below or above the offset magnetic body.

  FIG. 13 is a schematic diagram illustrating a configuration example of a stack of the first offset magnetic body 150A and the offset magnetic body pinning layer 159. When the laminated structure of the first offset magnetic body 150A and the offset magnetic body pinning layer 159 is used, not only the structure shown in FIG. 13A but also the offset magnetic body pinning 159 as shown in FIG. 13B. A laminated structure such as layer / offset magnetic body 150A / offset magnetic coupling layer 158 / offset magnetic body 150A may be used. Further, as shown in FIG. 13C, three or more offset magnetic bodies 150A may be stacked via the offset magnetic coupling layer 158. In the case of such a laminated structure, the two offset magnetic bodies 150A via the offset magnetic coupling layer 158 have antiparallel magnetization directions. In this case, an offset magnetic field is applied to the magnetization direction of the first offset magnetic body 150 </ b> A closest to the first magnetic layer 101 of the first magnetoresistive element 100. Further, when such a structure is used, the thickness of the offset magnetic body 150A closest to the first magnetic layer 101 of the first magnetoresistive element 100 is made larger than the thickness of the other offset magnetic bodies 150A included in the stacked structure. It is preferable to increase the thickness. When the magnetization direction of the first offset magnetic body 150A is set parallel to the magnetization direction of the first magnetic layer 101 of the first magnetoresistive element 100, the magnetization direction is determined by one heat treatment in a magnetic field. Also good. For example, as shown in FIGS. 13A, 13B, and 13C, the first offset magnetic body 150A via the offset magnetic coupling layer 158 has an odd number or an even number. It can be set whether the magnetization direction of the first offset magnetic body 150A closest to the first magnetic layer 101 is directed to 0 ° or 180 ° with respect to the magnetization direction of the second magnetic layer 102.

  The relationship between the magnetization direction of the first offset magnetic body 150A closest to the first magnetic layer 101 and the magnetization direction of the second magnetic layer 102 is shown in FIGS. 13 (a), 13 (b), and 13 (c). The control can also be performed by a two-step heat treatment in a magnetic field performed by changing the direction of the magnetic field without changing the number of layers of the first offset magnetic body 150A shown. A two-stage heat treatment method in a magnetic field will be described with an in-stack type offset magnetic body described later.

  When a laminated structure of the first offset magnetic body 150A and the offset magnetic body pinning layer 159 is used, a large current instantaneously flows as a current to be measured, and a large induced magnetic field is applied to the first offset magnetic body 150A In this case, the magnetization direction of the first offset magnetic body 150A can be easily maintained.

[1-7. Laminated vertical offset magnetic body]
Next, the relationship between the magnetoresistive element and the offset magnetic body when the offset magnetic body is disposed on the magnetoresistive element will be described. In the following description, the first magnetoresistive element 100 and the first offset magnetic body 150 will be described as an example. However, the second magnetoresistive element 200, the second offset magnetic body 250, and the like may be configured similarly. Is possible.

  FIG. 14 is a schematic diagram of the first magnetoresistive element 100 and a first offset magnetic body 150F that functions as an offset magnetic body. The first offset magnetic body 150F is another embodiment of the first offset magnetic body 150. In FIG. 14, the upper electrode E2 is omitted.

  In the present embodiment, the first offset magnetic body 150F is provided in the stacking direction of the first magnetoresistive element 100. For example, the first offset magnetic body 150F is provided on the cap layer 108 in the first magnetoresistive element 100 as shown in FIG. However, the first offset magnetic body 150F may be provided below the base layer 104, for example. However, when the first magnetic layer 101 functioning as the magnetization free layer is positioned above the second magnetic layer 102 functioning as the magnetization fixed layer, the first offset magnetic body is positioned above the first magnetic layer 101. It is preferable to provide 150F, and when the first magnetic layer 101 is located below the second magnetic layer 102, it is preferable to provide the first offset magnetic body 150F below the second magnetic layer 102.

  Further, as shown in FIG. 14A, an underlayer 151 for the first offset magnetic body 150F may be provided between the first offset magnetic body and the cap layer 108. In FIG. 14, by providing an upper electrode (not shown) on the first offset magnetic body 150, a current passed between the upper electrode and the lower electrode E1 flows through the first offset magnetic body 150F and the magnetoresistive element. Further, the upper electrode may be provided between the first offset magnetic body and the cap layer 108.

  As shown in FIG. 14B, an induced magnetic field that causes a change in resistance of the first magnetoresistive element 100 can be offset by the magnetic field of the first offset magnetic body 150F. For example, by setting the magnetization of the first offset magnetic body 150F in a direction substantially parallel to the induced magnetic field generated from the current to be measured, the induced magnetic field in which the resistance change of the first magnetoresistive element 100 occurs as shown in FIG. Can be offset. Here, as shown in FIG. 14B, when the first offset magnetic body 150F is disposed immediately above, the direction of the offset magnetic field applied to the first magnetoresistive element 100 is the magnetization of the first offset magnetic body 150F. The direction is opposite.

  As the material used for the first offset magnetic body 150F and the offset magnetic body underlayer 151, the same materials as those described in the description of FIG. 8 can be used. In the first offset magnetic body arranged in the stacking direction as shown in FIG. 14, a leakage magnetic field is generated from the end of the first offset magnetic body 150F. Therefore, if the area of the first offset magnetic body 150F is made too large compared to the area of the first magnetoresistive element 100, the magnetic field from the first offset magnetic body 150 is sufficiently applied to the first magnetoresistive element 100. Absent. Therefore, the area of the first offset magnetic body 150F needs to be set appropriately. For example, the area of the first offset magnetic body 150F is preferably equal to or more than about 25 times the area of the first magnetic layer 100. In addition, the first offset magnetic body 150F may also have the laminated structure of the offset magnetic body and the offset magnetic pinning layer described above. In this case, even when a large current flows instantaneously as the current to be measured and a large induced magnetic field is applied to the first offset magnetic body 150F, the magnetization direction of the first offset magnetic body 150F can be easily maintained. I can do it.

Here, the offset magnetic field H _offset of the magnetoresistive element can be adjusted by the configuration of the first offset magnetic body 150F and the like. 15A and 15B show an example in which a difference is provided in the configuration of the first offset magnetic body 150F and the second magnetic body 250F in order to obtain different offset magnetic fields for the two magnetoresistive elements. . In FIGS. 15A and 15B, two magnetoresistive elements are taken as an example, but three or more magnetoresistive elements may be used.

As shown in FIG. 15A, the offset magnetic field can be changed by changing the distance between the magnetoresistive element and the first and second offset magnetic bodies 150F and 250F. Distance _{L 1} between the first magnetoresistance element 100 first offset magnetic 150F shown in FIG. 14 (a), the distance between the second magnetoresistance element 200 of the second offset magnetic 250F L It is set to be larger than ₂ . In this case, the greater the distance from the first or second offset magnetic body 150F, 250F, the smaller the magnetic field applied to the first or second magnetoresistance element 100, 200. Therefore, the first or second magnetoresistance element The offset magnetic field H _{offset of} 100 and 200 becomes small.

As shown in FIG. 15B, the offset magnetic field can be changed by changing the film thickness of the first and second offset magnetic bodies 150F and 250F. Each film thickness t1 of the _first offset magnetic body 150F shown in FIG. 15B is set smaller than the film thickness t2 of the _second offset magnetic body 250F. In this case, since the magnetic volume of the first or second offset magnetic body 150F, 250F increases as the film thickness of the first or second offset magnetic body 150F, 250F increases, the first or second magnetoresistance The magnetic field applied to the elements 100 and 200 increases, and the offset magnetic field of the first or second magnetoresistive element 100 or 200 increases.

  In FIG. 15B, the case where the magnetic volume is changed by changing the film thickness of the first and second offset magnetic bodies 150F and 250F has been described. However, the first and second offset magnetic bodies 150F and 250F are different from each other. The magnetic volume can also be changed by changing the type of magnetic material used. For example, by using magnetic materials having different saturation magnetizations for the first offset magnetic body 150F and the second offset magnetic body 250F, the magnetic volume is changed, and the offsets of the first and second magnetoresistive elements 100 and 200 are changed. You can also change the magnetic field.

  Further, as described above, the offset magnetic field can be changed by changing the areas of the first and second offset magnetic bodies 150F and 250F. When the first and second offset magnetic bodies 150F and 250F are arranged in the stacking direction with respect to the first and second magnetoresistive elements 100 and 200, end portions of the first and second offset magnetic bodies 150F and 250F As the distance between the end portions of the first and second magnetoresistive elements 100 and 200 increases, the magnetic field applied to the first and second magnetoresistive elements 100 and 200 decreases, and the first and second magnetoresistive elements The offset magnetic fields of 100 and 200 are small.

  11A to 11C, the first offset magnetic body 150 arranged in the stacking direction is the same as the case where the first and second offset magnetic bodies 150 and 250 are adjacent to each other from the planar direction. Also, the sensitivity of a plurality of magnetoresistive elements may be adjusted by one first offset magnetic body 150 having a different shape.

[1-8. In-stack type offset magnetic body]
Next, the relationship between the magnetoresistive element and the offset magnetic body when the offset magnetic body is included in the magnetoresistive element will be described. In the following description, the first magnetoresistive element 100 and the first offset magnetic body 150 will be described as an example. However, the second magnetoresistive element 200, the second offset magnetic body 250, and the like may be configured similarly. Is possible.

  FIG. 16 shows a schematic diagram of the first magnetoresistive element 100 and the first offset magnetic body 150G according to the present embodiment. The first offset magnetic body 150 </ b> G is an aspect of the first offset magnetic body 150.

  In the embodiment shown in FIG. 154, the first magnetoresistance element 100 includes a first offset magnetic body 150G. The first offset magnetic body 150G is configured as an in-stack offset layer having a laminated structure. Accordingly, the first offset magnetic body 150G offsets the induced magnetic field in which the resistance change of the first magnetoresistive element 100 is caused by the exchange coupling magnetic field between the magnetization of the offset magnetic layer and the magnetization free layer included therein. Can do. For example, by setting the magnetization direction of the first magnetic layer 150G to be substantially parallel to the induced magnetic field generated from the current to be measured, the induced magnetic field in which the resistance change of the first magnetoresistive element 100 is generated as shown in FIG. It can be offset.

  In the embodiment shown in FIG. 16, the first offset magnetic body 150G includes a separation layer 152, a first offset magnetic layer 153, an offset magnetic coupling layer 154, a second offset magnetic layer 155, and an offset pinning layer. 156.

  The first offset magnetic layer 153 and the second offset magnetic layer 155 are made of, for example, a magnetic material. The magnetization of the second offset magnetic layer 155 is fixed in one direction by the offset pinning layer 156. The magnetization of the first offset magnetic layer 153 is set to be opposite to the magnetization of the second offset magnetic layer 155 adjacent via the offset magnetic coupling layer 154. The first offset magnetic layer 153 whose magnetization is fixed in one direction applies an offset to the first magnetic layer 101 by magnetic coupling such as exchange coupling. When such a laminated structure of the offset magnetic layer and the offset pinning layer is used, even when a large current instantaneously flows as a current to be measured and a large induced magnetic field is applied to the first offset magnetic body 150G, The magnetization direction of one offset magnetic body 150G can be easily maintained.

  The separation layer 152 is made of, for example, a non-magnetic material, and physically separates the first offset magnetic layer 153 and the first magnetic layer 101, so that the first offset magnetic layer 153 and the first magnetic layer 101 are separated from each other. Adjust the strength of magnetic coupling between. Note that the separation layer 152 is not necessarily provided depending on the material of the first offset magnetic layer 153. As shown in FIG. 16, by setting the magnetizations of the plurality of offset magnetic layers to antiparallel (180 °), the leakage magnetic field from the offset magnetic layer to the outside is suppressed, and magnetism other than offset application by exchange coupling to the magnetization free layer is performed. Interference can be suppressed.

  As shown in FIG. 15, the first offset magnetic body 150G includes a first offset magnetic layer 153 / an offset magnetic coupling layer 154 / a second offset magnetic layer 155, and includes a separation layer 152 and an offset pinning layer 156. A single-layer first offset magnetic layer 153 may be provided between them. Further, the number of offset magnetic layers may be three or more, such as first offset magnetic layer / first magnetic coupling layer / second offset magnetic layer / second magnetic coupling layer / third offset magnetic layer.

For the separation layer 152, for example, 5 nm of Cu is used. For the first offset magnetic layer 153, for example, Fe ₅₀ Co _{50 of} 3 nm is used. For the offset magnetic coupling layer 154, for example, Ru of 0.9 nm is used. For the second offset magnetic layer 155, for example, 3 nm of Fe ₅₀ Co ₅₀ is used. For the offset pinning layer 156, for example, 7 nm IrMn is used.

For the first offset magnetic layer 153 and the second offset magnetic layer 155, for example, at least one selected from the group consisting of Co, Fe, and Ni can be used. As the first offset magnetic layer 153, an alloy containing at least one material selected from the group consisting of Co, Fe, and Ni may be used. For example, the first offset magnetic layer 153 includes a Co _x Fe _100-x alloy (x is 0% to 100%), a Ni _x Fe _100-x alloy (x is 0% to 100%), or these The material which added the nonmagnetic element to is used. As the first offset magnetic layer _{153, (Co x Fe 100-} x) 100-y B y alloys (x 100% or more 0% or less, y is less than 30% 0%) may be used.

  For the separation layer 152, for example, a nonmagnetic material is used. The separation layer 43 is, for example, selected from the group of Cu, Ru, Rh, Ir, V, Cr, Nb, Mo, Ta, W, Rr, Au, Ag, Pt, Pd, Ti, Zr, Hf, and Hf A layer containing at least one element formed can be used.

  The offset pinning layer 156 imparts unidirectional anisotropy to the second offset magnetic layer 155 formed in contact with the offset pinning layer to fix the magnetization of the first offset magnetic layer 153. For the offset pinning layer 156, for example, an antiferromagnetic layer is used. The offset pinning layer 156 includes, for example, Ir—Mn, Pt—Mn, Pd—Pt—Mn, Ru—Mn, Rh—Mn, Ru—Rh—Mn, Fe—Mn, Ni—Mn, Cr—Mn—Pt. And at least one selected from the group consisting of Ni-O is used. Ir—Mn, Pt—Mn, Pd—Pt—Mn, Ru—Mn, Rh—Mn, Ru—Rh—Mn, Fe—Mn, Ni—Mn, Cr—Mn—Pt and Ni—O further added elements An added alloy may be used. The thickness of the offset pinning layer 156 is appropriately set in order to impart a sufficient unidirectional anisotropy.

  When PtMn or PdPtMn is used as the offset pinning layer 156, the thickness of the offset pinning layer is preferably 8 nm or more and 20 nm or less. The thickness of the offset pinning layer 156 is more preferably 10 nm or more and 15 nm or less. When IrMn is used as the offset pinning layer 156, unidirectional anisotropy can be imparted to the first offset magnetic layer 153 with a thinner offset pinning layer 156 than when PtMn is used as the offset pinning layer 156. . In this case, the thickness of the offset pinning layer 156 is preferably 4 nm or more and 18 nm or less. The thickness of the offset pinning layer 156 is more preferably 5 nm or more and 15 nm or less.

As the offset pinning layer 156, a hard magnetic layer (hard ferromagnetic material) may be used. For example, a hard magnetic material (hard ferromagnetic material) having a relatively high magnetic anisotropy and coercive force such as Co—Pt, Fe—Pt, Co—Pd, and Fe—Pd is used. Alternatively, an alloy obtained by further adding an additive element to Co—Pt, Fe—Pt, Co—Pd, or Fe—Pd may be used. As a hard magnetic layer, for example, CoPt (ratio of Co is less than 85% _{50%), (Co x Pt} 100-x) 100-y Cr y (x 85% to 50% or less, y is more than 0% 40% or less), or FePt (the ratio of Pt is 40% or more and 60% or less) may be used.

  The offset magnetic coupling layer 155 generates antiferromagnetic coupling between the first offset magnetic layer 153 and the second offset magnetic layer 155. The first magnetic coupling layer 44a forms a synthetic pin structure. For example, Ru is used as the first magnetic coupling layer. The thickness of the first magnetic coupling layer is preferably 0.8 nm or more and 1 nm or less. Any material other than Ru may be used as the offset magnetic coupling layer 155 as long as the material generates sufficient antiferromagnetic coupling between the first offset magnetic layer 153 and the second offset magnetic layer 155. The thickness of the offset magnetic coupling layer 154 can be set to a thickness of 0.8 nm or more and 1 nm or less corresponding to a second peak (2nd peak) of RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling. Furthermore, the thickness of the offset magnetic coupling layer 154 may be set to a thickness of 0.3 nm or more and 0.6 nm or less corresponding to the first peak (1st peak) of the RKKY coupling. As the first magnetic coupling layer, for example, Ru having a thickness of 0.9 nm is used. Thereby, highly reliable coupling can be obtained more stably.

  The thickness of the first offset magnetic layer 153 is preferably, for example, not less than 1.5 nm and not more than 5 nm. The thickness of the second offset magnetic layer 155 is preferably, for example, not less than 1.5 nm and not more than 5 nm. Thereby, for example, the strength of the unidirectional anisotropic magnetic field by the offset pinning layer 156 can be further increased. The magnetic film thickness (the product of the saturation magnetization Bs and the thickness t (Bs · t)) of the first offset magnetic layer 153 is preferably substantially equal to the magnetic film thickness of the second offset magnetic layer 155.

  The direction of the offset magnetic field applied to the first magnetic layer 101 from the first offset magnetic body 150 </ b> G can be any direction with respect to the magnetization direction of the second magnetic layer 102.

  FIG. 16B is a schematic diagram for explaining a method of setting the magnetization direction in the first offset magnetic body 150G. For example, the direction of the offset magnetic field applied from the first offset magnetic body 150G to the first magnetic layer 101 with respect to the magnetization direction of the second magnetic layer 102 can be set to 180 °. Such setting of the direction of the offset magnetic field can be performed by two-stage annealing in the magnetic field, and selection of the material configuration used for the pinning layer 105 and the material configuration used for the offset pinning layer 156.

  About the antiferromagnetic material used for the pinning layer 105 or the offset pinning layer 156, the temperature at which magnetization fixation occurs depends on the composition. For example, an ordered alloy-based material such as PtMn has a higher temperature at which magnetization fixation is performed compared to a material that causes magnetization fixation even with irregularities such as IrMn. For example, PtMn can be used for the pinning layer 105 and IrMn can be used for the offset pinning layer 156.

  Next, a two-stage heat treatment in a magnetic field as shown in FIG. For example, as shown in (1) of FIG. 16B, annealing is performed at 320 ° C. for 10 hours while applying an external magnetic field in the right direction of FIG. Thereby, the magnetization direction of the second magnetization fixed layer 106 in contact with the pinning layer 105 is fixed to the right. The magnetization direction of the second offset magnetic layer 155 in contact with the offset pinning layer 156 is once fixed to the right.

  Next, for example, as shown in (2) of FIG. 16B, annealing is performed at 250 ° C. for 1 hour while applying an external magnetic field in the left direction of FIG. 15B. As a result, the magnetization direction of the second magnetization fixed layer 106 in contact with the pinning layer 105 remains rightward, and the magnetization direction of the second offset magnetic layer 155 in contact with the offset pinning layer 156 is fixed to the left. This magnetization direction is maintained even at room temperature, as shown in the right diagram of FIG.

  As described above, the direction of the offset magnetic field to the first magnetic layer 101 and the second magnetic layer 102 is determined by the method of annealing in the magnetic field and the selection of the material configuration of the pinning layer 105 and the material configuration of the offset pinning layer 156. It is possible to set arbitrarily. In addition, the temperature difference in magnetization fixation between the pinning layer 105 and the offset pinning layer 156 can be set not only by selection of each material but also by the film thickness of each layer. For example, even when IrMn 7 nm is used for the pinning layer 105 and IrMn 5 nm is used for the offset pinning layer 156, the two-step annealing in the magnetic field shown in FIG. 16B is performed, as shown in FIG. It is possible to perform alignment in a proper magnetization direction.

  Here, the offset magnetic field applied to the magnetoresistive element can be adjusted by the configuration of the in-stack offset layer. For example, the first magnetoresistive element 100 and the first offset magnetic body 150G are configured as shown in FIG. 16, and the second magnetoresistive element 200 and the second offset magnetic body 250 are configured in the same manner. . However, in the second offset magnetic body 250, the separation layer 152 is made thicker than the first magnetoresistive element 150G. As a result, the first magnetic resistance element 100 has a relatively weak offset magnetic field. In addition, the offset magnetic field can be changed by making the thicknesses of the first offset magnetic layer 153 and the second offset magnetic layer 155 different by two magnetoresistive elements. In this case, the offset magnetic field applied to the first magnetic layer 101 becomes weaker as the thickness of the first offset magnetic layer 153 and the second offset magnetic layer 155 is increased.

  The direction of the offset magnetic field applied to the magnetoresistive element can also be adjusted by the number of offset magnetic layers through the offset magnetic coupling layer 154 included in the in-stack offset layer. For example, as shown in FIG. 16, when the number of offset magnetic layers is an even number such as two, the direction of the second offset magnetic layer 155 in contact with the offset pinning layer 156 and the first magnetic layer 101 close to the first magnetic layer 101. The direction of magnetization of the offset magnetic layer 153 is reversed, but when the number of offset magnetic layers is an odd number, the direction of the offset magnetic layer in contact with the offset pinning layer 156 and the offset magnetic layer close to the first magnetic layer 101 are used. The magnetization directions of the layers are the same. Therefore, when the offset direction by the in-stack offset layer is substantially parallel to the magnetization direction of the pin layer of the magnetoresistive element, the two-step annealing shown in FIG. It is not always necessary, and can be determined by one-step annealing depending on the number of offset magnetic layers.

[1-9. Production method]
Next, a method for manufacturing the current sensor according to the present embodiment will be described. FIG. 17A to FIG. 17J are schematic perspective views in order of the processes, illustrating the method for manufacturing the current sensor according to this embodiment.

  As illustrated in FIG. 17A, the lower electrode E <b> 1 is formed on the substrate 110. For example, Ta (5 nm) / Cu (200 nm) / Ta (35 nm) is formed. Thereafter, a surface smoothing process such as a CMP process may be performed on the outermost surface of the lower electrode E1 to flatten the structure formed on the lower electrode E1.

  Next, as shown in FIG. 17B, the planar shape of the lower electrode E1 is processed. In this step, the resist is patterned by photolithography, and then physical milling or chemical milling is performed using a resist pattern (not shown) as a mask. For example, Ar ion milling is performed.

Next, as shown in FIG. 17C, an insulating film 111 is embedded around the lower electrode E1. In this process, for example, a lift-off process is performed. For example, the insulating layer 111 is formed on the entire surface while leaving the resist pattern formed by photolithography in FIG. 17B, and then the resist pattern is removed. For example, SiO _x , AlO _x , SiN _x, and AlN _x can be used as the insulating layer 111.

Next, a structure between the electrodes of the magnetoresistive element is formed on the lower electrode E1. For example, Ta (3 nm) / Ru (2 nm) is formed as the base layer 104. On top of that, IrMn (7 nm) is formed as a pinning layer 105. On top of this, Co ₇₅ Fe ₂₅ (2.5 nm) / Ru (0.9 nm) / Co ₄₀ Fe ₄₀ B ₂₀ (3 nm) is formed as the second magnetic film 102. On top of that, MgO (2 nm) is formed as an intermediate layer 103. On top of that, Co ₄₀ Fe ₄₀ B ₂₀ (2 nm) / Ta (0.4 nm) / Ni ₈₀ Fe ₂₀ (6 nm) is formed as the first magnetic film 101. On top of that, Cu (1 nm) / Ta (2 nm) / Ru (5 nm) is formed as a cap layer 108.

  Next, annealing in a magnetic field that fixes the magnetization direction of the second magnetic film 102 is performed. For example, annealing is performed for one hour at 300 ° C. while applying an external magnetic field of 7 kOe. For example, it is performed by applying an external magnetic field substantially parallel to the induction magnetic field application direction (X direction). Here, for example, when the offset magnetic body (150G, FIG. 16A) provided with the in-stack bias layer described above is used, two-stage annealing may be performed.

  Next, as shown in FIG. 17E, the planar shape of the configuration between the electrodes of the magnetoresistive element is processed. In this step, the resist is patterned by photolithography, and then physical milling or chemical milling is performed using a resist pattern (not shown) as a mask. By this step, as shown in FIG. 17E, a plurality of components can be processed at once.

Next, as shown in FIG. 17F, an insulating layer 109 is embedded in the periphery of the configuration between the electrodes of the magnetoresistive element. In this process, for example, a lift-off process is performed. For example, while leaving the resist pattern formed by photolithography in FIG. 17E, the insulating layer 109 is formed on the entire surface, and then the resist pattern is removed. As the insulating layer 109, for example, SiO _x , AlO _x , SiN _x, AlN _x, or the like can be used.

  Next, as shown in FIG. 17G, a hole 109a for embedding the first offset magnetic body 150 provided adjacent to the configuration between the electrodes of the magnetoresistive element is formed. In this step, the resist is patterned by photolithography, and then physical milling or chemical milling is performed using a resist pattern (not shown) as a mask. FIG. 17G shows an example in which a pair of first offset magnetic bodies 150E is formed for a plurality of magnetoresistive elements, but an offset magnetic body is separately provided for a plurality of magnetoresistive elements. Even when it is formed, it can be processed at once. In this step, the hole 109a may be formed up to the point where it penetrates the insulating layer 109, or may be stopped halfway. FIG. 17 (g) illustrates a case of stopping in the middle. As will be described later, when the hole 109a is etched to the point where it penetrates the insulating layer 109, in the step of embedding the first offset magnetic body 150 shown in FIG. It is necessary to form an insulating layer (not shown).

Next, as shown in FIG. 17H, the first offset magnetic body 150 is embedded in the hole 109a formed in FIG. In this process, for example, a lift-off process is performed. For example, the first offset magnetic body 150 is formed on the entire surface while leaving the resist pattern formed by photolithography in FIG. 17H, and then the resist pattern is removed. Here, for example, Cr (5 nm) is formed as the underlayer for the first offset magnetic body 150, and for example, Co ₈₀ Pt ₂₀ (20 nm) is formed as the first offset magnetic body 150 thereon. A cap layer (not shown) may be further formed thereon. As the cap layer, the above-described materials that can be used for the cap layer 108 of the magnetoresistive element may be used, or insulating layers such as SiO _x , AlO _x , SiN _x, and AlN _x may be used. In FIG. 17 (h), after embedding the first offset magnetic body 150, an external magnetic field is applied at room temperature to set the magnetization direction of the hard magnetic layer (hard ferromagnetic material) included in the offset magnetic body 150. Do. For example, an external magnetic field is applied in a direction substantially parallel to the direction of the induction magnetic field. The setting of the magnetization direction of the first offset magnetic body 150 by the external magnetic field is after embedding the first offset magnetic body 150, before and after the removal of the resist pattern, and as shown in FIG. It may be performed at any timing after the processing of the electrode.

  Next, as shown in FIG. 17I, the upper electrode E2 is formed. Next, as shown in FIG. 17J, the planar shape of the upper electrode E2 is processed. In this step, the resist is patterned by photolithography, and then physical milling or chemical milling is performed using a resist pattern (not shown) as a mask.

  According to the manufacturing method according to such an aspect, the current sensor according to the present embodiment can be manufactured without increasing the number of steps. Although not shown in FIGS. 17A to 17J, a contact hole may be formed in the lower electrode E1, or a protective film may be formed after the upper electrode E2 is processed.

  Next, another method for manufacturing the current sensor according to the present embodiment will be described. FIG. 18A to FIG. 18J are schematic perspective views in order of the processes, illustrating another method for manufacturing the current sensor according to the present embodiment. Note that the steps shown in FIGS. 18A to 18D are the same as the steps shown in FIGS. 17A to 17D, and thus description thereof is omitted.

  As shown in FIG. 18E, the planar shape of the configuration between the electrodes of the magnetoresistive element is processed. This step is performed in substantially the same manner as the step shown in FIG. 17E, except that the dimension in the Y direction of the laminated first magnetic film 101 and the like is longer than the final dimension. .

  Next, as shown in FIG. 18F, an insulating layer is embedded in the periphery of the stacked body. This step is performed in the same manner as the step shown in FIG.

  Next, as shown in FIG. 18G, a hole 109a for embedding the first offset magnetic body 150 provided adjacent to the configuration between the electrodes of the magnetoresistive element is formed. In this step, the resist is patterned by photolithography, and then physical milling or chemical milling is performed using a resist pattern (not shown) as a mask. FIG. 18G illustrates an example in which a pair of first offset magnetic bodies 150E are formed for a plurality of magnetoresistive elements, but an offset magnetic body is separately provided for a plurality of magnetoresistive elements. Even when it is formed, it can be processed at once. FIG. 18G shows an example in which etching is performed until the hole 109 a penetrates the insulating layer 109. In the example shown in FIG. 18G, the etching is performed so that the dimension in the X direction of the laminated first magnetic film 101 and the like becomes the final dimension.

Next, as shown in FIG. 18H, the first offset magnetic body 150 is embedded in the hole 109a formed in FIG. In this process, for example, a lift-off process is performed. For example, the first offset magnetic body 150 is formed on the entire surface while leaving the resist pattern formed by photolithography in FIG. 18H, and then the resist pattern is removed. Here, since the hole 109a penetrates the insulating layer 109, the insulating layer 112 is formed as the first layer in the step of embedding the first offset magnetic body 150. The insulating layer 112 is formed, for example, by depositing SiO _x to a thickness of 10 nm. Here, the formed insulating layer 112 is also deposited on the side wall of the hole 109a. Therefore, the magnetoresistive element and the first offset magnetic body 150 can be insulated from each other by the insulating layer 112 deposited on the side wall, and the distance between them can be suitably adjusted. Thereafter, for example, the first offset magnetic body 150 is embedded by a process similar to the process shown in FIG. In FIG. 18H, after embedding the first offset magnetic body 150, an external magnetic field is applied at room temperature to set the magnetization direction of the hard ferromagnetic material included in the offset magnetic body 150. For example, an external magnetic field is applied in a direction substantially parallel to the direction of the induction magnetic field. The setting of the magnetization direction of the first offset magnetic body 150 by the external magnetic field is after embedding the first offset magnetic body 150, before and after the removal of the resist pattern, and as shown in FIG. It may be performed at any timing after the processing of the electrode.

  Next, as shown in FIG. 18I, the upper electrode E2 is formed. Next, as shown in FIG. 18J, the planar shape of the upper electrode E2 is processed. This step is performed in the same manner as the step described with reference to FIG.

  Also with the manufacturing method according to such an aspect, the current sensor according to the present embodiment can be manufactured without increasing the number of steps. Although not shown in FIGS. 18A to 18J, a contact hole may be formed in the lower electrode E1, or a protective film may be formed after the upper electrode E2 is processed.

  FIG. 19 shows an example of a current sensor according to this embodiment. FIG. 19A shows an arrangement example of a current sensor including a magnetoresistive element to which an offset magnetic field in the reverse direction is applied. When measuring positive and negative induction magnetic fields, such as when the current to be measured is alternating current, it is desirable to use a magnetoresistive element group in which the direction of the offset magnetic field is reversed. Such an offset magnetic field in the reverse direction can be realized by setting the magnetization direction of the offset magnetic body in the reverse direction. Moreover, the setting of the magnetization direction of the offset magnetic body can be freely set by the method as described above.

  That is, as shown in FIG. 19, in the present embodiment, the first magnetoresistive element 100, the second magnetoresistive element 200, the fifth magnetoresistive element 410, and the sixth magnetoresistive element in the Y direction on the substrate. 420, the 3rd magnetoresistive element 300, and the 4th magnetoresistive element 400 are arrange | positioned. Further, the first magnetoresistive element 100, the second magnetoresistive element 200, the third magnetoresistive element 300, and the fourth magnetoresistive element 400 have first offset magnetism on the surfaces facing in the X direction, respectively. A body 150, a second offset magnetic body 250, a third offset magnetic body 350, and a fourth offset magnetic body 450 are provided. Furthermore, the first offset magnetic body 150 and the fourth offset magnetic body 450 are disposed in proximity to the first magnetoresistive element 100 and the fourth magnetoresistive element 400, respectively. On the other hand, the second offset magnetic body 250 and the third offset magnetic body 350 are disposed close to the second magnetoresistive element 200 and the third magnetoresistive element 300, respectively.

  The fourth to sixth magnetoresistive elements 400, 410, and 420 have the same configuration as the first to third magnetoresistive elements 100, 200, and 300. Further, the third offset magnetic body 350 and the fourth offset magnetic body 450 are one mode of the offset magnetic body, and have the same configuration as the first offset magnetic body 150 and the second offset magnetic body 250.

  In such a configuration, a strong offset magnetic field is applied to the first magnetoresistive element 100 in the X direction, and a weak offset magnetic field is applied to the second magnetoresistive element 200 in the X direction. A strong offset magnetic field is applied to the fourth magnetoresistive element 400 in the −X direction, and a weak offset magnetic field is applied to the third magnetoresistive element 300 in the −X direction. The number of magnetoresistive elements can be changed as appropriate, and the fifth magnetoresistive element 410 or the sixth magnetoresistive element 420 can be omitted.

  A magnetoresistive element group in which the direction of the offset magnetic field as shown in FIG. 19A is reversed can be formed on the same substrate by the configuration of the offset magnetic material as described above and the two-step heat treatment method. On the other hand, as shown in FIG. 19B, the element groups when the magnetization direction of the offset magnetic body is parallel to the magnetization direction of the second magnetic layer and when they are antiparallel are separated on different substrates w1 and w2. And then cut into chips c1 and c2, and then arranged side by side on the sensor substrate module 712. Such a production method is simpler than the production of an offset magnetic material in the opposite direction on the same substrate.

  Further, as shown in FIG. 19C, after a plurality of magnetoresistive elements and offset magnetic bodies are fabricated on the same substrate w1 with the same configuration, they are cut out into chips c1, c2, etc., and then an external magnetic field is applied. Thus, chips c1 and c2 having different magnetization directions of the offset magnetic body can be manufactured. The chips thus manufactured may be arranged side by side on the sensor substrate module 712.

  The arrangement and manufacturing method of the magnetoresistive element group in which the direction of the offset magnetic field is reversed as shown in FIG. 19 can be applied to any form of offset magnetic material described in this specification.

[2. Current sensor according to second embodiment]
Next, the configuration of the current sensor according to the second embodiment will be described. The current sensor according to the present embodiment is configured in substantially the same manner as the current sensor according to the above-described embodiment, but differs in that a linear response magnetic body is provided instead of the offset magnetic body. FIG. 20A is a schematic diagram of the first magnetoresistive element 100 and the first linear response magnetic body 160A. The first linear response magnetic body 160A is an embodiment of the linear response magnetic body. The first linear response magnetic body 160A is configured in substantially the same manner as the first offset magnetic body 150A, but is substantially perpendicular to the current magnetic field due to the current to be measured with respect to the first magnetoresistive element 100. It differs in that a magnetic field is applied in a certain direction. In addition, selection of the material of a linear response magnetic body is performed similarly to an offset magnetic body. In the case of using a laminated body of a linear response magnetic body and a pinning layer for linear response magnetic body, the same configuration as that described for the offset magnetic body can be used. When such a laminated structure of a linear response magnetic material and a pinning layer for linear response magnetic material is used, even when a large current flows instantaneously as a measured current and a large induced magnetic field is applied to the linear response magnetic material, The magnetization direction of the linear response magnetic body can be easily maintained.

  With the magnetic field of the first linear response magnetic body 160A, the magnetization direction of the first magnetic layer 101 in a state where no external magnetic field is applied can be set to a desired direction. For example, by setting the magnetization direction of the first linear response magnetic body 160A to a direction orthogonal to the magnetization direction of the second magnetic layer 102, as shown in FIG. 3B, the magnetization of the first magnetic layer 101 The direction can be orthogonal to the magnetization direction of the second magnetic layer 102. By making the magnetization direction of the first magnetic layer 101 and the magnetization direction of the second magnetic layer 102 intersect (orthogonal), it is possible to linearly respond to positive and negative magnetic fields as shown in FIG. . Such a first linear response magnetic body 160A may be used in combination with the offset magnetic body described above.

  For the first linear response magnetic body 160A and a base layer (not shown), the same material as that of the offset magnetic body described above can be used. Here, the sensitivity ((dR / R) / 2Hs) of the magnetoresistive element can be adjusted by the configuration of the first linear response magnetic body 160A. The method of adjusting the magnitude of the offset magnetic field according to the arrangement of the offset magnetic body described above can also be applied to the case of the first linear response magnetic body 160A. In the case of the first linear response magnetic body 160A, the magnitude of the saturation magnetic field Hs is obtained when the offset magnetic field is increased by the method described above. The sensitivity is set lower as the saturation magnetic field Hs is set larger.

  FIG. 20B is a schematic diagram of the first magnetoresistive element 100 and the first linear response magnetic body 160F. The first linear response magnetic body 160F is an aspect of the linear response magnetic body. The first linear response magnetic body 160F is configured in substantially the same manner as the first offset magnetic body 150F, but is substantially perpendicular to the current magnetic field due to the current to be measured with respect to the first magnetoresistive element 100. This is different from the first offset magnetic body 150F in that a magnetic field is applied in a certain direction. In FIG. 20B, the upper electrode E2 is omitted.

  By using the first linear response magnetic body 160F, it is possible to obtain the same effect as when the above-described first linear response magnetic body 160A is used. Here, since the first linear response magnetic body 160F is provided in the stacking direction of the first magnetic layer 101 and the like, the leakage magnetic field from the first linear response magnetic body 160F to the first magnetic layer 101 is the first magnetic field 101F. The direction is opposite to the magnetization direction of the linear response magnetic body 160F. Such a first linear response magnetic body 160F may be used in combination with the offset magnetic body described above.

  The material selection and sensitivity adjustment of the first linear response magnetic body 160F can be performed in the same manner as the first linear response magnetic body 160A.

  FIG. 21 is a schematic diagram of the first magnetoresistive element 100 and the first linear response magnetic body 160G according to another configuration. The first linear response magnetic body 160G is an embodiment of the first linear response magnetic body 160. The first linear response magnetic body 160G is configured in substantially the same manner as the first offset magnetic body 150G, but is substantially perpendicular to the current magnetic field due to the current to be measured with respect to the first magnetoresistive element 100. This is different from the first linear response magnetic body 160G in that a magnetic field is applied in a certain direction.

  By using the first linear response magnetic body 160G, it is possible to obtain the same effect as when the first linear response magnetic body 160A described above is used.

  The first linear response magnetic body 160G shown in FIG. 20 includes a separation layer 162, a first bias magnetic layer 163, a bias magnetic coupling layer 164, a first bias magnetic layer 165, and a bias pinning layer 166. The selection of the material of these layers, the adjustment of the film thickness, and the like are performed in the same manner as the separation layer 152, the first offset magnetic layer 153, the offset magnetic coupling layer 154, the second offset magnetic layer 155, and the offset pinning layer 156, respectively. .

  The direction of the magnetic field applied to the first magnetic layer 101 from the first linear response magnetic body 160 </ b> G can be any direction with respect to the magnetization direction of the second magnetic layer 102.

  FIG. 21B is a schematic diagram for explaining a method of setting the magnetization direction in the first linear response magnetic body 160G. For example, the direction of the magnetic field applied from the first linear response magnetic body 160G to the first magnetic layer 101 with respect to the magnetization direction of the second magnetic layer 102 can be set to 90 ° (or 270 °). Such setting of the direction of the magnetic field can be performed by a method substantially similar to the method described with reference to FIG. However, the method shown in this embodiment is different in that annealing is performed while an external magnetic field is applied downward in FIG. 21B, as shown in the middle diagram of FIG. As a result, the magnetization direction of the second magnetization fixed layer 106 in contact with the pinning layer 105 remains rightward, and the magnetization direction of the second bias magnetic layer 165 in contact with the bias pinning layer 166 is fixed to the left. This magnetization direction is maintained even at room temperature, as shown in the right diagram of FIG.

  Here, the sensitivity ((dR / R) / 2Hs) of the magnetoresistive element in the present embodiment is the same as that in the embodiment described with reference to FIG. Adjustment is possible by adjusting the thickness of the bias magnetic layer 163 and the second bias magnetic layer 165.

  In the above description, the two-stage annealing in the magnetic field is described in order to set the magnetization directions of the first offset magnetic body 150G and the first linear response magnetic body 160G, respectively. Here, when such two-step annealing in a magnetic field is used, the magnetization direction of the first magnetic layer 101 can also be set. FIG. 22 is a schematic diagram for explaining the method for this purpose. Also by such a method, for example, as shown in FIG. 3B, the magnetization direction of the magnetization free layer is orthogonal to the magnetization direction of the magnetization fixed layer, and linearly changes to a positive and negative magnetic field as shown in FIG. Can be sensitive.

  In order to set the magnetization direction of the first magnetic layer 101 and the magnetization direction of the second magnetic layer 102 to different directions, for example, as shown in the left diagram of FIG. . The first heat treatment in a magnetic field is performed, for example, by annealing for 10 hours at 320 ° C. while applying an external magnetic field in the right direction of FIG. Thereby, the magnetization direction of the second magnetization fixed layer 106 in contact with the pinning layer 105 is fixed to the right.

  Next, for example, a second heat treatment in a magnetic field is performed. The second heat treatment in a magnetic field is performed, for example, by annealing while applying an external magnetic field upward in FIG. 21B as shown in the middle diagram of FIG. The temperature at this time is set lower than 320 ° C. and lower than the magnetization fixed temperature of the antiferromagnetic material used for the bias pinning layer 166. As a result, the magnetization direction of the first magnetic layer 101 can be set upward while the magnetization direction of the second magnetization fixed layer 106 remains rightward. That is, the direction of the induced magnetic anisotropy of the first magnetic layer 101 can be set to the up and down direction.

  Here, the sensitivity ((dR / R) / 2Hs) of the magnetoresistive element can be adjusted by the temperature and time of the second heat treatment in the magnetic field of the two-step annealing. For example, the first magnetoresistive element 100 and the second magnetoresistive element 200 are manufactured, and the time of the second heat treatment in the magnetic field when the first magnetoresistive element 100 is manufactured is the same as that when the second magnetoresistive element 200 is manufactured. Since the induction magnetic anisotropy of the first magnetic layer of the second magnetoresistive element 200 becomes higher than that of the first magnetoresistive element 100 by making it longer than the time of the heat treatment in the second magnetic field. , Hs increases, and sensitivity ((dR / R) / 2Hs) is set low.

[3. Current sensor according to third embodiment]
Next, a current sensor according to a third embodiment will be described. The current sensor according to the present embodiment is configured in substantially the same manner as the current sensor according to the first embodiment, but differs in that both the offset magnetic body and the linear response magnetic body are included. In the present embodiment, the above-described offset magnetic body and linear response magnetic body can be used in combination as much as possible in terms of structure.

  FIG. 23 is a schematic diagram showing a configuration of a current sensor that uses a combination of an offset magnetic body and a linear response magnetic body. In the example shown in FIG. 23A, a first offset magnetic body 150A is placed adjacent to the side of the first magnetoresistive element 100, and an in-stack bias layer is provided in the first magnetoresistive element 100. The case where the 1st linear response magnetic body 160G using is provided is shown. The linearity of the resistance change with respect to the external magnetic field is improved by the first linear response magnetic body 160G, and the induced magnetic field in which the resistance change occurs can be offset by the first offset magnetic body 150A.

  In the example shown in FIG. 23B, the first offset magnetic body 150A is provided laterally in the direction parallel to the induced magnetic field of the first magnetoresistive element 100, and the induced magnetic field of the first magnetoresistive element 100 is provided. The case where the 1st linear response magnetic body 160A is provided in the side of the perpendicular direction is shown. Even in this case, it is possible to achieve the same effect as the combination shown in FIG.

  Note that the combination of the offset magnetic body and the linear response magnetic body shown in FIGS. 23A and 23B is merely an example, and the above-described structures can be combined as long as the structure can be realized.

[4. Current Sensor According to Fourth Embodiment]
Next, a current sensor according to a fourth embodiment will be described. FIG. 24 is a schematic diagram illustrating a configuration of a current sensor according to the fourth embodiment. The current sensor according to the fourth embodiment is configured in substantially the same manner as the current sensor according to the third embodiment, but further includes a magnetic field guide 170.

The magnetic field guide 170 is provided adjacent to the side parallel to the direction in which the induced magnetic field of the first magnetoresistive element 100 is applied, and converges the induced magnetic field and applies it to the first magnetoresistive element 100. By providing such a magnetic field guide 170, it is possible to measure the induced magnetic field with higher sensitivity. Here, in order to use such a magnetic field guide 170 together with the magnetic field offset by the first offset magnetic body 150B according to the present embodiment, the magnetic field guide 170 is provided on the oblique side of the first magnetoresistive element 100 shown in FIG. It is conceivable to use the first offset magnetic body 150B. Thereby, the magnetic field guide 170 and the first offset magnetic body 150B can be arranged without structural interference. The current sensor according to the present embodiment includes a linear response magnetic body 160G. For the magnetic field guide 170, for example, a ferromagnetic material made of at least one of Fe, Co, and Ni, or an alloy containing at least one of them can be used, and a soft magnetic material is preferably used. For example, Ni ₈₀ Fe ₂₀ or the like can be used.

[5. Current sensor according to fifth embodiment]
Next, a current sensor according to a fifth embodiment of the invention will be described. As described with reference to FIG. 4, the current sensor according to the above embodiment selects an optimum magnetoresistive element from a plurality of magnetoresistive elements having different magnetic field sensitivities according to the magnitude of the induction magnetic field, and outputs the selected magnetoresistive element. The selection output signal is calculated from the voltage.

  However, since the plurality of magnetoresistive elements are sensitive to different ranges of induced magnetic fields, even if they are driven by the same output voltage, the values of the measured induced magnetic fields are different. Therefore, unless it is possible to specify which magnetoresistive element is suitable for the output voltage, it is impossible to measure the induced magnetic field value from the current to be measured.

  Therefore, in the current sensor according to the present embodiment, all the output signals of the plurality of magnetoresistive elements arranged are input to the multiplexer, and the optimum output signal is selected based on a predetermined control signal. The control signal includes data for selecting one optimum sensor in accordance with the range of the induced magnetic field.

  FIG. 25 is a circuit block diagram showing a configuration of current sensor 600 according to the present embodiment. The current sensor 600 according to the present embodiment includes a plurality of measurement magnetoresistive elements 610_-n to 610_-1, 610_c, 610_1 to 610_n, a reference magnetoresistive element 620, a comparator 630, a register 640, and a multiplexer 650. An amplifier 660, an A / D conversion circuit 670, a memory 680, and a communication circuit 690.

  The plurality of measurement magnetoresistive elements 610 — −n to 610 — 1, 610 — c, and 610 — 1 to 610 — n have sensitivity to different magnetic fields. As the plurality of measurement magnetoresistive elements 610_-n to 610_-1, 610_c, 610_1 to 610_n, the magnetoresistive elements according to any of the first, third, and fourth embodiments can be applied. is there. That is, an offset magnetic body is provided in the vicinity of the measurement magnetoresistive elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n. It is also possible to provide a linear response magnetic body or the like.

  The reference magnetoresistive element 620 is a magnetoresistive element having sensitivity in a wider magnetic field range than the plurality of measurement magnetoresistive elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n. Further, as the reference magnetoresistive element 620, the magnetoresistive element according to any one of the first to fourth embodiments can be adopted. That is, an offset magnetic body, a linear response magnetic body, or the like can be provided in the vicinity of the reference magnetoresistive element 620.

The comparator 630 generates a control signal indicating the approximate magnitude of the external magnetic field based on the output signal of the reference magnetoresistive element 620. FIG. 26 is a circuit diagram illustrating a configuration of the comparator 630. The comparator 630 includes a plurality of comparators 631_1 to 631_2n + 4. The comparators 631_1 to 631_2n + 4 output the output signal of the reference magnetoresistive element 620 to the reference voltage V _min (the free layer (first magnetic layer 101 etc.) and the pinned layer (second magnetic layer 102 of the magnetoresistive element according to the present embodiment). Etc.) in which the magnetization vector is oriented in the 0 ° direction), V ₁ ... V _{2n + 2} , V _max (the free layer (first magnetic layer 101 etc.) and pinned layer of the magnetoresistive element according to the present embodiment) (The output voltage in a state in which the magnetization vector of the second magnetic layer 102 or the like is oriented in the 180 ° direction)), and the result is output. Accordingly, one input terminal of each of the plurality of comparators 631_1 to 631_2n + 4 is connected to the reference magnetoresistive element 620. Different reference voltages are applied to the other input terminals. Further, the output terminals of the plurality of comparators 631_1 to 631_2n + 4 are connected to the register 640.

  Returning to FIG. 25, the description will be continued. The register 640 holds the output signal of the comparator 630 as a control signal. The multiplexer 650 selects one output signal from the measurement magnetoresistive elements 610_-n to 610_-1, 610_c, 610_1 to 610_n, and the output signal of the reference magnetoresistive element 620 based on this control signal. The amplifier 660 amplifies the output signal of the multiplexer 650, and the A / D conversion circuit 670 converts the output signal of the amplifier 660 into a digital output value. The memory 680 stores the output signal and control signal of the A / D conversion circuit 670, and the communication circuit 690 outputs the signal stored in the memory 680 to the outside.

  FIG. 27 is a graph showing the characteristics of a plurality of measurement magnetoresistance elements 610 — n to 610 — 1, 610 — c, 610 — 1 to 610 — n and the reference magnetoresistance element 620. The horizontal axis represents the magnitude of the induced magnetic field, and the vertical axis represents the output voltages of the measurement magnetoresistive elements 610 — −n to 610 — 1, 610 — c, 610 — 1 to 610 — n and the reference magnetoresistive element 620.

As shown in the figure, the plurality of measurement magnetoresistive elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n have the same magnetic field sensitivity, but have a characteristic in which the value of the saturation magnetic field is offset. That is, the measuring magnetoresistive element 610_c has magnetic field sensitivity in a region of −H _{c to} H _c centering on 0 Oe. Furthermore, the measurement magnetoresistive elements 610_1 to 610_n have their measurement ranges shifted in the positive direction. Note that the shift amount of the measurement range in the measurement magnetoresistance element 610_k (k = 1 to n) is the kth smallest. In addition, the measurement magnetoresistive elements 610_-1 to 610_-n are shifted in the negative direction in the measurement range. Note that the shift amount of the measurement range in the measurement magnetoresistance element 610_-k (k = 1 to n) is the kth smallest.

In FIG. 27, V _max and V _min are output voltages in the magnetization saturation state of the magnetoresistive elements for measurement 610_-n to 610_-1, 610_c, 610_1 to 610_n and the reference magnetoresistive element 620. When an external magnetic field having a predetermined magnitude is applied, the output signal of the measuring magnetoresistive element 610 — k (k = 1 to n) whose external magnetic field is within the measurement range is a magnitude between V _max and V _min. It becomes. On the other hand, the output signal of the measurement magnetoresistive element 610 — k (k = 1 to n) whose external magnetic field is outside the measurement range is V _max or V _min . The reference magnetoresistive element 620 has a lower magnetic field sensitivity than the measurement magnetoresistive elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n. Further, the reference magnetoresistive element 620 has a magnetic field sensitivity in a region of −H _{r to} H _r centered on 0 Oe, and a plurality of measuring magnetoresistive elements 610 — −n to 610 — − are included in this measurement range. All the measurement ranges of 1,610_c and 610_1 to 610_n are included.

  Hereinafter, the measuring magnetoresistive element 610_c having a resistance value intermediate between the maximum value and the minimum value when the magnitude of the external magnetic field is 0 may be referred to as a central magnetoresistive element 610. Centering on this central magnetoresistive element 610, if the same number (for example, n) of measuring magnetoresistive elements 610 with the measurement range shifted to the ± side are arranged, the ± magnetic field can be measured symmetrically with respect to the alternating magnetic field. Is possible. The following description will be made on the premise of a current sensor having a magnetic field-voltage characteristic as shown in FIG.

In FIG. 27, V _{1 to} V _{2n + 2} are the reference voltages that are compared with the output voltage of the reference magnetoresistive element 620. The reference voltage is set for each of the measurement magnetoresistive elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n. The reference voltages V _{1 to} V _n set for the measurement magnetoresistance elements 610 — −n to 610 — 1 whose measurement range is shifted in the − direction are the outputs of the measurement magnetoresistance elements 610 — −n to 610 — 1. in the saturation magnetic field _-H n _{~-H 1} when the voltage is _{V min,} which is the output voltage of the reference magnetoresistive element 620. The reference voltages V _{n + 3 to} V _{2n + 2} set for the measuring magnetoresistive elements 610_1 to 610_n whose measurement range is shifted in the + direction are those when the output voltage of the measuring magnetoresistive elements 610_1 to 610_n becomes V _max . This is the output voltage of the reference magnetoresistance element 620 in the saturation magnetic fields H _{1 to} H _n . For the central magnetoresistive element 610_c, two reference voltages V _{n + 1} and V _{n + 2} are set by these two methods.

However, in an actual magnetic field sensor, since the linear response range is narrower than the range of V _{min to} V _max , V _min described above is larger than the output voltage in the saturated magnetic field, and V _max is smaller than the output voltage in the saturated magnetic field. May be set. When n measuring magnetoresistive elements are arranged on the minus side, n measuring magnetoresistive elements are arranged on the plus side, and one central magnetoresistive element 610 is arranged, it is necessary to set 2n + 2 reference voltages.

  FIG. 28 shows the relationship between the magnitude of the induced magnetic field, the value of the control signal Sc, the measurement magnetoresistive elements 610_-n to 610_-1, 610_c, 610_1 to 610_n, and the reference magnetoresistive element 620 selected by the multiplexer 650. It is a table. The left column of FIG. 28 shows the magnitude of the induced magnetic field, the middle column shows the control signal Sc, and the right column shows the selected magnetoresistive element. Since the control signal Sc is composed of output signals of 2n + 4 comparators 631_1 to 631_2n + 4 (FIG. 26), FIG. 28 shows data for each output signal of the comparators 631_1 to 631_2n + 4.

FIG. 28 When the magnitude H of the induced magnetic field is −H _k ≦ H <−H _k−1 (k = _{1 to} n), the output voltage of the reference magnetoresistive element 620 is V _{n−k + 1} or more. , V _{n−k + 2} . Accordingly, the output signals of the comparators 631_1 to 631_n−k + 1 are 1 (High), and the output signals of the comparators 631_n−k + 2 to 631_2n + 4 are 0 (low). When the magnitude H of the induced magnetic field is −H _c ≦ H <H _c , the output voltage of the reference magnetoresistive element 620 is V _{n + 1} or more and smaller than V _{n + 2} . Accordingly, the output signals of the comparators 631_1 to 631_n are 1 (High), and the output signals of the comparators 631_n + 1 to 631_2n + 4 are 0 (low). When the magnitude H of the induced magnetic field is H _k−1 ≦ H <H _k (k = 1 to n), the output voltage of the reference magnetoresistive element 620 is equal to or higher than V _{n + k + 1} and smaller than V _{n + k + 2.} . Accordingly, the output signals of the comparators 631_1 to 631_n + k + 1 are 1 (High), and the output signals of the comparators 631_n + k + 2 to 631_2n + 4 are 0 (low). Receiving the control signal Sc composed of these output signals, the comparator 630 selects and outputs the output signal of the measuring magnetoresistive element 610-k.

  Next, the operation of the memory 680 will be described. FIG. 29 is a circuit block diagram for explaining the operation of the memory 680. The output signal output from the multiplexer 650 is converted into N-bit digital data by the A / D conversion circuit 670. The control signal is 2n + 4 bit digital data. The current sensor 600 according to the present embodiment specifies the measurement magnetoresistive element 610 selected by the control signal. Accordingly, the memory 680 stores N + 2n + 4 bit digital data as one unit.

[6. Current Sensor According to Sixth Embodiment]
Next, a current sensor according to a sixth embodiment of the present invention will be described. FIG. 30 is a circuit block diagram showing the configuration of the current sensor 601 according to the present embodiment. The current sensor 601 according to the present embodiment is configured in substantially the same manner as the current sensor 600 according to the fifth embodiment, but does not include the reference magnetoresistive element 620, and the configuration and control of the comparator 639. It differs in the signal generation method.

  FIG. 31 is a circuit diagram showing a configuration of a comparator 639 according to the present embodiment. The comparator 639 includes a plurality of comparators 632_1 to 632_2n + 2. One input terminal of each of the plurality of comparators 632_1 to 632_2n + 2 is connected to the plurality of measurement magnetoresistance elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n. Here, comparators 632_1 to 632_n and 632_n + 3 to 632_2n + 2 are connected to the measurement magnetoresistive elements 610_-n to 610_1 and 610_1 to 610_n, respectively. Two comparators 632_n + 1 and 632_n + 2 are connected. Further, different reference voltages are respectively applied to the other input terminals of the comparators 632_1 to 632_2n + 2. Further, the output terminals of the plurality of comparators 632_1 to 632_2n + 2 are connected to the register 640.

FIG. 32 is a graph showing characteristics of a plurality of measurement magnetoresistance elements 610_-n to 610_-1, 610_c, 610_1 to 610_n. The reference voltage is set for each of the measurement magnetoresistive elements 610_-n to 610_-1, 610_c, and 610_1 to 610_n. The reference voltage set for the magnetoresistive elements for measurement 610 — −n to 610 — 1 whose measurement range is shifted in the − direction is V _min . Reference voltage set for measuring the magnetoresistive element 610_1~610_n the measuring range is shifted in the + direction is _{V max.} Note that the center magnetoresistive element _{610_c, V min} and _{V max} is set as the reference voltage.

However, in an actual magnetic field sensor, since the linear response range is narrower than the range of V _{min to} V _max , V _min described above is larger than the output voltage in the saturated magnetic field, and V _max is smaller than the output voltage in the saturated magnetic field. May be set. When n negative magnetoresistive elements, n positive magnetoresistive elements, and one central magnetoresistive element 610 are arranged, it is necessary to set 2n + 2 reference voltages.

  As a result, the control signal output from the comparator 639 is the same as the control signal in the fifth embodiment. Therefore, the multiplexer 650 selects the measurement magnetoresistive element 610 as in the sixth embodiment.

  The measurement magnetoresistive elements 610_-n to 610_-1, 610_c, 610_1 to 610_n and the reference magnetoresistive element 620 include a plurality of first magnetoresistive elements 100 or second magnetoresistive elements 200 in series or It is also possible to use things connected in parallel. FIG. 33 is a schematic view illustrating a current sensor according to such an embodiment. In such an embodiment, an equivalent offset magnetic field is applied to the plurality of first magnetoresistive elements 100. Similarly, an equivalent offset magnetic field is also applied to the plurality of second magnetoresistive elements 200.

As shown in FIG. 33A, for example, a plurality of first magnetoresistive elements 100 are electrically connected in series to form a measuring magnetoresistive element 610_k (k = 1 to n−1). Two magnetoresistive elements 200 may be electrically connected in series to form a measuring magnetoresistive element 610 — k + 1. When the number of magnetoresistive elements connected in series is N, the obtained electric signal is N times that when the number of magnetoresistive elements is 1. On the other hand, thermal noise and Schottky noise are N ^1/2 times. That is, the SN ratio (signal-noise ratio: SNR) is N ^1/2 times. The SN ratio can be improved by increasing the number N of magnetoresistive elements connected in series.

  The bias voltage applied to one magnetoresistive element is, for example, 50 millivolts (mV) or more and 150 mV or less. When N magnetoresistive elements are connected in series, the bias voltage is 50 mV × N or more and 150 mV × N or less. For example, when the number N of magnetoresistive elements connected in series is 25, the bias voltage is 1 V or more and 3.75 V or less.

  When the value of the bias voltage is 1 V or more, the design of an electric circuit for processing an electric signal obtained from the magnetoresistive element becomes easy, which is practically preferable.

  When the bias voltage (inter-terminal voltage) exceeds 10 V, it is not desirable in an electric circuit that processes an electric signal obtained from the magnetoresistive element. In the embodiment, the number N of magnetoresistive elements connected in series and the bias voltage are set so as to be in an appropriate voltage range.

  For example, the voltage when a plurality of magnetoresistive elements are electrically connected in series is preferably 1 V or more and 10 V or less. For example, a voltage applied between terminals of a plurality of magnetoresistive elements electrically connected in series (between one terminal and the other terminal) is 1 V or more and 10 V or less.

  As shown in FIG. 33B, in the current sensor according to another embodiment, for example, a plurality of first magnetoresistive elements 100 are electrically connected in parallel to measure the magnetoresistive element 610_k (k = 1 to n), and the plurality of second magnetoresistive elements 200 may be electrically connected in parallel to form the measuring magnetoresistive element 610_k + 1.

  As shown in FIG. 33C, in the current sensor according to another embodiment, for example, the resistance values indicating the reverse polarities of the plurality of first magnetoresistive elements 100 and the first magnetoresistive elements are the same. The magnetoresistive element 110 is connected so as to form a Wheatstone bridge circuit to be a measurement magnetoresistive element 610_k (k = 1 to n), and the plurality of second magnetoresistive elements 200 and the reverse of the second magnetoresistive elements. The magnetoresistive elements 210 having the same resistance value indicating polarity may be connected to form a Wheatstone bridge circuit to form the measuring magnetoresistive element 610_k + 1. Thereby, for example, temperature compensation of detection characteristics can be performed.

  In the circuit shown in FIG. 33 (c), a fixed resistor having the same resistance value as that of the first magnetoresistive element 100 is employed instead of the aforementioned magnetoresistive element 110, and the first magnetoresistive element 210 is replaced with the first resistor. A fixed resistor having the same resistance value as that of the second magnetoresistive element 200 may be employed (half Wheatstone bridge circuit).

  As shown in FIG. 33D, in a current sensor according to another embodiment, for example, a magnetoresistive element 120 in which a plurality of first magnetoresistive elements 100 are connected in series and the magnetoresistive element 110 are connected in series. A Wheatstone bridge circuit may be formed by 130 connected to the magnetic resistance element 610_k (k = 1 to n) for measurement. For example, a Wheatstone bridge circuit is formed by a magnetoresistive element 220 in which a plurality of second magnetoresistive elements 200 are connected in series and a magnetoresistive element 230 in which the magnetoresistive elements 210 are connected in series. The magnetoresistive element for measurement 610_k + 1 may be used.

  In the circuit shown in FIG. 33D, a fixed resistor having the same resistance value as that of the magnetoresistive element 120 is employed instead of the magnetoresistive element 130, and the magnetoresistive element is replaced with the magnetoresistive element 230. A fixed resistor having the same resistance value as 220 may be employed (half Wheatstone bridge circuit).

[7. Application example to smart meter]
Next, an example in which the current sensor according to the first to sixth embodiments is applied to a smart meter will be described. In the case of a smart meter, it is necessary to measure voltage and current. However, since voltage can be monitored in a conventional semiconductor element, the current sensor of the present invention is added to the current meter. As well as functioning as a smart meter. In the following, an example in which the current sensor 600 according to the fifth embodiment is applied to a smart meter will be described, but the current sensor according to another embodiment can also be applied.

  FIG. 34 is a schematic diagram showing the appearance of the smart meter 700 according to the present embodiment. As shown in FIG. 34, the smart meter 700 displays the housing 710 for housing the sensor unit, and the first terminal unit 720, the second terminal unit 730, and the amount of power provided on the housing 710 to the outside. A display unit 740 is provided. Case 710 stores each component of smart meter 700 according to the present embodiment. The first terminal portion 720 and the second terminal portion 730 electrically connect each component of the smart meter 700 and the measurement target via a probe (not shown). The display unit 740 displays the result of measurement by the smart meter 700 and the like. In general, an alternating current of about 50 to 60 Hz is assumed, but a direct current may be used depending on the application. In the figure, the directionality of the current is illustrated, but this indicates a unique direction of a current such as a direct current to explain the direction of the current magnetic field. In the case of an alternating current, the current direction Changes to reverse polarity with time. In addition, this figure shows a case of a single-phase alternating current of about 100 to 200 V, but even in the case of a three-phase alternating current, there is essentially no change. The current lines connected from the outside only change from a pair of states as shown in the figure to three pairs. Each configuration of the smart meter housed in the housing 710 is referred to as a current measurement module.

  FIG. 35 is a functional block diagram showing a schematic configuration of the smart meter 700. As shown in FIG. As shown in FIG. 35, the smart meter 700 further includes a wiring 500, a current sensor 600, a voltmeter 750, an A / D conversion circuit 760, a calculation unit 770, and a communication circuit 780 in addition to the above configuration.

  The current sensor 600 is the current sensor 600 according to the fifth embodiment. However, the memory 680 and the communication circuit 690 can be omitted. The current sensor 600 is disposed in the vicinity of the wiring 500 and measures a current flowing through the wiring 500. The wiring 500 is connected to the first terminal portion 720 and the second terminal portion 730, and is connected to the measurement target via a probe (not shown).

  As the voltmeter 750, various voltmeters can be applied. The voltmeter 750 measures the voltage between the first terminal unit 720 and the second terminal unit 730. The A / D conversion circuit 760 converts the voltage value measured by the voltmeter 750 into a digital signal.

  The calculation unit 770 acquires a current value from the current sensor 600 and a voltage value from the A / D conversion circuit 760, and calculates power and the like. The display unit 740 acquires and displays the current value, voltage value, power magnitude, and the like from the calculation unit. Similarly, the communication circuit 780 obtains a current value, a voltage value, a magnitude of power, and the like from the arithmetic unit and outputs them to the outside of the smart meter 700.

  Hereinafter, an arrangement example of the current sensor 600 in the housing 710 of the smart meter 700 will be shown.

[7-1. In case of flat 1]
FIG. 36 and FIG. 37 are schematic views showing an arrangement example of the current sensor 600 inside the housing 710 of the smart meter 700. As shown to Fig.37 (a), in this Embodiment, it arrange | positions so that an electric current may flow up and down (z direction) of the housing 710. FIG. The wiring 500 inside the casing 710 is fixed to the casing 710 via an insulating current line fixing instruction unit 510 so that the position does not change. In addition, the current sensor 600 that detects the induced magnetic field from the fixed wiring 500 is also fixed to the housing 710 so that the distance from the wiring 500 does not change due to a change over time. In order to accurately detect the current value, it is important that the sensor substrate module 712 is fixed so that the distance between the current sensor 600 and the wiring 500 does not change.

  In order to fix the current sensor 600 to the casing 710, the electronic board module 711 is fixed to the casing 710, and the sensor board module 712 is fixed to the electronic board module 711. By doing so, the position of the current sensor 600 is fixed to the casing 710, and the distance from the similarly fixed wiring 500 is not changed.

  In this embodiment, the sensor substrate module 711 is installed on a plane obtained by cutting the cross section substantially perpendicular to the direction (z direction) in which the current of the wiring 500 fixed inside the housing 710 flows. The electronic board module 711 that fixes the sensor board module 712 is also set in the same plane.

  As shown in FIG. 37 (a), the direction of the induced magnetic field in the vicinity of the sensor substrate module 712 is a direction parallel to the front from the back of the page (x direction).

  As shown in FIG. 37B, in order to detect the induced magnetic field, the substrate 713 on which the current sensor 600 is formed is a plane parallel to the plane of the sensor substrate module 712 (xy plane). The initial magnetization direction (magnetization direction when the current is zero) of the first magnetic layer 101 of the current sensor 600 formed thereon is in a direction perpendicular to the wiring 500 and having a magnetization direction in the plane. is there. By doing so, it becomes possible to detect the current of any polarity of the alternating current with good linearity.

  In the structure shown in FIG. 37, magnetization alignment is suitably performed, and the influence of external noise can be suitably reduced. That is, when an external magnetic field is applied from the surface of the current sensor 601 to which external magnetic field noise is most easily applied, the magnetic field is applied in a direction (z direction) perpendicular to the surface (xy plane). However, since the magnetization direction of the current sensor 601 (the magnetization direction of the first magnetic layer 101) is parallel to the surface (xy plane), even if a magnetic field in a direction perpendicular to the surface (z direction) is applied, almost no noise is applied. Does not occur. According to this magnetization alignment, it is possible to reduce the influence of the external magnetic field without adding a special structure. A magnetic shield may be provided in the cross-sectional direction of the current sensor 601. This magnetic shield has the smallest cross-sectional area among the current measurement modules. Therefore, the increase in cost associated with adding a magnetic shield can be minimized. In addition, since the substrate of the current sensor 601 can be attached to the electronic substrate module 711 as it is, the influence of an arrangement error is reduced, and the manufacturing cost necessary to keep the arrangement accuracy high can be minimized. It becomes. Therefore, in the configuration as shown in FIGS. 36 and 37, it is possible to suitably perform the alignment of the induced magnetic field by the wiring 500 and the magnetization of the current sensor 601.

  Furthermore, by arranging as shown in FIG. 36, a plurality of current sensors can be arranged on the same substrate. For this reason, it is possible to reduce the manufacturing cost.

  As shown in FIG. 36, in the smart meter 700 according to the present embodiment, a plurality of measurement magnetoresistive elements 610 are arranged at a substantially constant distance from the wiring 500. The plurality of measurement magnetoresistive elements 610 have different offset magnetic fields. Therefore, the smart meter 700 according to the present embodiment can measure a wide current range. In addition, as shown in FIG. 37B, the reference magnetoresistive element 620 described with reference to FIGS. 25 and 27 may be provided. In order to measure an alternating current, it is preferable to use a magnetoresistive element group in which the direction of the offset magnetic field shown in FIG. 19 is reversed.

[7-2. 2)
38 and 39 are schematic views showing other arrangement examples of the current sensor 600 inside the housing 710 of the smart meter 700. FIG. 38 and 39 show a configuration in which a plurality of measuring magnetoresistive elements 610 are arranged at different distances from the wiring 500. FIG. That is, in order to be able to detect a current range of a wide dynamic range, a difference is provided in the distance from the wiring 500, and the magnitude of the induced magnetic field when a certain amount of current is passed is determined as the magnetoresistive element 610 for measurement. It is different depending on. Further, for example, when focusing on two measurement magnetoresistive elements 610 having different distances from the wiring 500, even if the measurement ranges of these measurement magnetoresistive elements 610 are the same, they are arranged far from the wiring 500. The measuring magnetoresistive element 610 can detect an induced magnetic field in a state where a large current flows, and the measuring magnetoresistive element 610 disposed near the wiring 500 detects an induced magnetic field in a state where a weak current flows. It will be possible. Therefore, by disposing the measurement magnetoresistive element 610 in this way, a wider measurement range can be detected in addition to an increase in the measurement range by changing the offset magnetic field. The relationship between the housing 710 and the magnetization direction is the same as that described with reference to FIGS. 36 and 37, as shown in FIGS.

[7-3. Vertical installation 1]
40 and 41 are schematic views showing other arrangement examples of the current sensor 600 inside the housing 710 of the smart meter 700. FIG. In the present embodiment, the first terminal portion 720 and the second terminal portion 730 are arranged in the lateral direction (y direction) with respect to the housing 710 of the smart meter 700, and the wiring 500 in the housing 710 is connected to the housing 710. Are arranged so as to flow parallel to the display surface.

  The arrangement examples shown in FIGS. 40 and 41 are almost the same as the arrangement examples shown in FIGS. 36 and 37. However, as shown in FIGS. Thus, the arrangement of the current sensor 600 is vertically different from the arrangement example shown in FIGS. That is, the substrate 713 on which the current sensor 600 is formed is disposed in a plane (xy plane) parallel to the major axis direction (y direction) of the wiring 500, and the measurement magnetoresistive element 600 is disposed with respect to the electronic substrate module 711. It is arranged to stand vertically. As shown in FIG. 41B, the initial magnetization direction of the first magnetic layer 101 is parallel to the major axis direction (y direction) of the wiring 500. With such an arrangement, it is possible to detect an AC magnetic field generated by an AC current regardless of polarity.

[7-4. Vertical installation 2]
42 and 43 are schematic views showing other arrangement examples of the current sensor 600 inside the housing 710 of the smart meter 700. FIG. This arrangement example is substantially the same as the arrangement example described with reference to FIGS. 42 and 43. In FIG. 43, a plurality of measurement magnetoresistive elements 600 are arranged at different distances from the wiring 500. It has become. That is, in order to be able to detect a current range of a wide dynamic range, a difference is provided in the distance from the wiring 500, and the magnitude of the induced magnetic field when a certain amount of current is passed is determined as the magnetoresistive element 610 for measurement. It is different depending on. Further, for example, when focusing on two measurement magnetoresistive elements 610 having different distances from the wiring 500, even if the measurement ranges of these measurement magnetoresistive elements 610 are the same, they are arranged far from the wiring 500. The measuring magnetoresistive element 610 can detect an induced magnetic field in a state where a large current flows, and the measuring magnetoresistive element 610 disposed near the wiring 500 detects an induced magnetic field in a state where a weak current flows. It will be possible. Therefore, by disposing the measurement magnetoresistive element 610 in this way, a wider measurement range can be detected in addition to an increase in the measurement range by changing the offset magnetic field. In order to measure an alternating current, it is preferable to use a magnetoresistive element group in which the direction of the offset magnetic field shown in FIG. 19 is reversed. The relationship between the housing 710 and the magnetization direction is the same as that described with reference to FIGS. 42 and 43, as shown in FIG.

[8. Installation of current sensors inside household appliances]
The current sensor according to each of the above-described embodiments can be applied not only to a high-precision and wide dynamic range application such as a smart meter, but also to an application for measuring power of household appliances. This can be used for the purpose of HEMS (Home Energy Management System). FIG. 44 shows an example in which the home appliance 800 and the current sensor 600 are applied to HEMS applications. Also in the home appliance 800, it is preferable that the wiring 500 to be measured and the current sensor 600 have a module configuration in which they are fixedly arranged. The module configuration can be the same as that shown in FIGS.

[9. Other Embodiments]
As mentioned above, although embodiment of this invention was described, this invention can be implemented also with the following aspects.

[Aspect 1]
A plurality of magnetoresistive elements whose resistance values change by application of an induced magnetic field from a current to be measured,
An intermediate value of the range of the induction magnetic field to which the magnetoresistive element is sensitive varies depending on the magnetoresistive element.

[Aspect 2]
A plurality of magnetoresistive elements whose resistance values change by application of an induced magnetic field from a current to be measured,
The current sensor, wherein the first induction magnetic field in which the resistance value of the magnetoresistive element is an intermediate value varies depending on the magnetoresistive element.

[Aspect 3]
A plurality of magnetoresistive elements whose resistance values change by application of an induced magnetic field from a current to be measured;
And a first magnetic body that applies a first offset magnetic field substantially parallel to the induction magnetic field applied to the first magnetoresistive element of the plurality of magnetoresistive elements. .

[Aspect 4]
A second magnetic body that applies a second offset magnetic field substantially parallel to the induced magnetic field applied to a second magnetoresistive element different from the first magnetoresistive element among the plurality of magnetoresistive elements; Prepared,
The current sensor according to aspect 3, wherein the first offset magnetic field is different from the second offset magnetic field.

[Aspect 5]
The distance between the first magnetoresistive element and the first magnetic body is different from the distance between the second magnetoresistive element and the second magnetic body.

[Aspect 6]
The current sensor according to aspect 4, wherein the magnetic volume of the first magnetic body is different from the magnetic volume of the second magnetic body.

[Aspect 7]
The area of the said 1st magnetic body differs from the area of the said 2nd magnetic body. The electric current sensor of the aspect 4 characterized by the above-mentioned.

[Aspect 8]
The first magnetic body applies a second offset magnetic field substantially parallel to the induced magnetic field applied to a second magnetoresistive element different from the first magnetoresistive element among the plurality of magnetoresistive elements. And
The current sensor according to aspect 3, wherein the first offset magnetic field is different from the second offset magnetic field.

[Aspect 9]
The current sensor according to aspect 8, wherein a distance between the first magnetoresistive element and the first magnetic body is different from a distance between the second magnetoresistive element and the first magnetic body.

[Aspect 10]
In the direction of the induced magnetic field applied to the first magnetoresistive element, the dimension of the first magnetic body adjacent to the first magnetoresistive element is equal to the direction of the induced magnetic field applied to the second magnetoresistive element. The current sensor according to aspect 8, wherein the first magnetic body is adjacent to the second magnetoresistive element and has a size different from that of the first magnetic body.

[Aspect 11]
The current sensor according to aspect 3 or 8 to 10, wherein the first magnetic body is disposed adjacent to the first magnetoresistive element.

[Aspect 12]
The current sensor according to Aspect 3 or 8 to 10, wherein the first magnetic body is laminated on the first magnetoresistive element.

[Aspect 13]
The first magnetic body and the second magnetic body are arranged adjacent to the first magnetoresistive element and the second magnetoresistive element, respectively. .

[Aspect 14]
The current sensor according to any one of aspects 4 to 7, wherein the first magnetic body and the second magnetic body are stacked on the first magnetoresistive element and the second magnetoresistive element, respectively. .

[Aspect 15]
The plurality of magnetoresistive elements include a first magnetic layer, a second magnetic layer, a first intermediate layer provided between the first magnetic layer and the second magnetic layer, and a pair The current sensor according to any one of aspects 1 to 15, wherein

[Aspect 16]
The plurality of magnetoresistive elements include a non-magnetic matrix containing a plurality of magnetic particles and a pair of electrode layers.

[Aspect 17]
The plurality of magnetoresistive elements include a first magnetic layer whose magnetization direction changes with respect to the induction magnetic field, a second magnetic layer, and the first magnetic layer and the second magnetic layer. A first intermediate layer provided and a pair of electrode layers;
The first magnetic body is provided between one of the electrode layers in the first magnetoresistive element and the first magnetic body,
The current sensor according to aspect 3, wherein the first offset magnetic field is an offset due to exchange coupling.

[Aspect 18]
A second magnetic body that applies a second offset magnetic field substantially parallel to the induced magnetic field applied to a second magnetoresistive element different from the first magnetoresistive element among the plurality of magnetoresistive elements; Prepared,
The first offset magnetic field is different from the second offset magnetic field,
The current sensor according to aspect 17, wherein the second magnetic body is provided between one of the electrode layers and the intermediate layer in the second magnetoresistive element.

[Aspect 19]
The first magnetoresistive element further includes a first separation layer provided between the first magnetic layer and the first magnetic body,
The second magnetoresistive element further includes a second separation layer provided between the first magnetic layer and the second magnetic body,
The current sensor according to aspect 18, wherein the first separation layer and the second separation layer have different film thicknesses.

[Aspect 20]
The current sensor according to any one of aspects 1 to 19, wherein a signal indicating an appropriate output signal among a plurality of different output signals obtained from the plurality of magnetoresistive elements is selectively output with respect to the induction magnetic field.

[Aspect 21]
The current sensor according to aspect 20, wherein the plurality of output signals are input to a multiplexer, and one output signal is selected and output according to a control signal of the multiplexer.

[Aspect 22]
A smart meter equipped with the current sensor according to any one of aspects 1 to 21.

[Others]
Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 100 ... 1st magnetoresistive element, 101 ... 1st magnetic layer (magnetization free layer), 102 ... 2nd magnetic layer (1st magnetization fixed layer), 103 ... Intermediate | middle layer, 104 ... Underlayer, 105 ... Pinning layer, DESCRIPTION OF SYMBOLS 106 ... 2nd magnetization fixed layer, 107 ... Magnetic coupling layer, 108 ... Cap layer, 109 ... Insulating layer, 110 ... Substrate, 111 ... Insulating layer, 112 ... Insulating layer, 150 ... 1st offset magnetic body, 151 ... Bottom Base layer, 152 ... separation layer, 153 ... first offset magnetic layer, 154 ... offset magnetic coupling layer, 155 ... second offset magnetic layer, 156 ... offset pinning layer, 160 ... first linear response magnetic body, 162 ... separation layer 163 ... first bias magnetic layer, 164 ... bias magnetic coupling layer, 165 ... second bias magnetic layer, 166 ... bias pinning layer, 200 ... second magnetoresistive element, 250 ... second off Tsu DOO magnetic, 300 ... third offset magnetic body, 500 ... wire, E1 ... lower electrode, E2 ... upper electrode.

Claims (14)

A first magnetoresistive element having magnetic field sensitivity in a first measurement range;
A second magnetoresistive element having magnetic field sensitivity in a second measurement range;
First information connected to the first magnetoresistive element or the second magnetoresistive element and including a magnitude relation between an output signal of the first magnetoresistive element or the second magnetoresistive element and a threshold value. A first output circuit for outputting
The output signal of the first magnetoresistive element or the second magnetoresistive element is connected to the first magnetoresistive element and the second magnetoresistive element, and an output signal of the first magnetoresistive element or the second magnetoresistive element is set to the threshold according to the first information. When the output signal of the first magnetoresistive element is smaller than the value, the output signal of the first magnetoresistive element or the second magnetoresistive element is greater than the threshold value. A second output circuit that outputs an output signal of the second magnetoresistive element,
The lower limit of the first measurement range is smaller than the lower limit of the second measurement range,
The upper limit of the first measurement range is smaller than the upper limit of the second measurement range. A first magnetoresistive element having magnetic field sensitivity in a first measurement range;
A second magnetoresistive element having magnetic field sensitivity in a second measurement range;
A third magnetoresistive element;
A first output circuit connected to the third magnetoresistive element and outputting first information including a magnitude relationship between an output signal of the third magnetoresistive element and a threshold;
When the output signal of the third magnetoresistive element is smaller than the threshold value according to the first information, connected to the first magnetoresistive element and the second magnetoresistive element, the An output signal of the first magnetoresistive element is output, and an output signal of the second magnetoresistive element is output when the output signal of the third magnetoresistive element is greater than the threshold value. An output circuit and
The lower limit of the first measurement range is smaller than the lower limit of the second measurement range,
The upper limit of the first measurement range is smaller than the upper limit of the second measurement range. A first magnetoresistive element having magnetic field sensitivity in a first measurement range;
A second magnetoresistive element having magnetic field sensitivity in a second measurement range;
An output circuit for switching and outputting output signals of the first magnetoresistive element and the second magnetoresistive element,
The lower limit of the first measurement range is smaller than the lower limit of the second measurement range,
The upper limit of the first measurement range is smaller than the upper limit of the second measurement range. The sensor according to claim 1, wherein the first output circuit includes a comparator that compares an output signal of the first magnetoresistive element or the second magnetoresistive element with the threshold value. The third magnetoresistive element has a magnetic field sensitivity of a third measurement range,
The lower limit of the third measurement range is smaller than the lower limit of the first measurement range,
The sensor according to claim 2, wherein an upper limit of the third measurement range is greater than an upper limit of the second measurement range. The sensor according to claim 2, wherein the first output circuit includes a comparator that compares an output signal of the third magnetoresistive element with the threshold value. Outputting an output signal output from the second output circuit;
The sensor according to claim 1, wherein the first information is output. A first magnetic body and a second magnetic body;
The first magnetoresistive element and the second magnetoresistive element are aligned in a first direction,
The first magnetic body is aligned with the first magnetoresistive element in a second direction intersecting the first direction,
The sensor according to claim 1, wherein the second magnetic body is aligned with the second magnetoresistive element in the second direction. The sensor according to claim 8, wherein a distance between the first magnetoresistive element and the first magnetic body is different from a distance between the second magnetoresistive element and the second magnetic body. The sensor according to claim 8, wherein the magnetic volume of the first magnetic body is different from the magnetic volume of the second magnetic body. The sensor according to claim 8, wherein an area of the first magnetic body is different from an area of the second magnetic body on a surface including the first direction and the second direction. When the magnitude of the current flowing through the device under test is smaller than the first current value, an output signal of the first magnetoresistive element is output,
The sensor according to any one of claims 1 to 11, wherein an output signal of the second magnetoresistive element is output when a magnitude of a current flowing through the object to be measured is larger than the first current value. An electronic board module;
A current measurement module comprising: wiring provided on the electronic board module; and the sensor according to claim 1. A current measurement module according to claim 13;
A housing that houses the current measurement module;
A first terminal portion provided in the housing;
A smart meter provided with the 2nd terminal part provided in the case and electrically connected to the 1st terminal part via the wiring.

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