JP2007078417A - Current sensor and current sensing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a current sensor capable of highly accurate current sensing over a wide detection range (dynamic range) from a small current to a large current, and provide its current sensing method. <P>SOLUTION: A plurality of magnetic sensing elements (mounted to integrated chips CP1 and CP2) arranged in such a way that the intensity of magnetism (first magnetism) received from a bus bar BB, a body to be detected, may vary is provided as magnetic-balance-type current sensors. A current flowing through the bus bar BB is detected while switching the magnetic sensing elements according to the magnitude of a current value of the bus bar BB. At this time, output chips (the magnetic sensing elements) are changed over to an integrated chip CP2 having a smaller magnetic intensity received from the bus bar BB when the current value of the bus bar BB exceeds a threshold value and reversely to an integrated chip CP1 having larger magnetic intensity received from the bus bar BB when the current value of the bus bar BB does not exceed the threshold value. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a current sensor used for detection of a current flowing through a detected object, such as a rod-shaped conductor for power supply connected to a vehicle battery, for example, and a current detection method thereof. The present invention relates to a current sensor for detecting a current (specifically, the amount and direction of the current) flowing through the detected object under the magnetic detection by and a current detection method thereof.

  Conventionally, as this type of current sensor, as described in Patent Document 1, for example, a current sensor using a Hall element is well known. In recent years, in addition to the magnetism (first magnetism) generated by the current of the detected object, further magnetism (second magnetism) is generated, and the first magnetism by the detected object is canceled by this second magnetism. Further, a current sensor that detects a current flowing through the detection object based on the intensity of the second magnetism, a so-called magnetic balance detection type current sensor, and the like have been proposed. Hereinafter, the principle of current detection by the magnetic balance detection type current sensor will be described with reference to FIG.

As shown in FIG. 11, this sensor is configured such that an integrated chip (Hall IC) CP in which Hall elements are integrated together with peripheral circuits is disposed in the vicinity of a bus bar BB that is a detection target. . Further, a feedback wiring RB made of an appropriate wiring material (for example, aluminum) is further provided in the vicinity of the bus bar BB, and a current (feedback current) is caused to flow through the feedback wiring RB, thereby separately providing magnetism (second magnetic B2). Is generated. Thus, the magnetism (first magnetism B1) generated due to the current (sensed current) flowing through the bus bar BB that is the subject to be detected is canceled by the magnetism (second magnetism B2) by this feedback current. In addition, while feedback controlling the feedback current flowing through the feedback wiring RB, the current flowing through the bus bar BB (specifically, the current) based on the controlled feedback current amount (corresponding to the second magnetic strength). Quantity, direction, etc.). That is, in the current sensor using the Hall element (integrated chip CP), the magnetism (second magnetism B2) generated to cancel the magnetism (first magnetism B1) generated due to the current flowing through the bus bar BB. ) Is detected as the Hall voltage, the current (detected current) flowing through the bus bar BB (detected body) is detected.
JP 2003-262650 A

  As described above, even with such a conventional current sensor, the current (specifically, the amount and direction of the current) flowing through the detection target (bus bar BB) under the magnetic detection using the magnetic detection element (Hall element). It can be detected. However, with such a conventional current sensor, it is difficult to perform highly accurate current detection over a wide detection range (dynamic range) from a small current to a large current.

  Specifically, in such a magnetic balance detection type current sensor, when a large current is to be detected, a large magnetism (second magnetism) that cancels the large current is required. Therefore, in this sensor, how much magnetism the upper limit of the detection range (dynamic range) can generate as the second magnetism, that is, how much current flows through the feedback wiring RB (FIG. 11). It depends on whether it can be done (upper limit of feedback current).

  However, if the magnetic detection element (Hall element) is moved away from the detection target (bus bar BB), the current to be canceled becomes smaller by the distance, and this can be detected for large currents. become. However, in such a case, since the distance to the object to be detected (bus bar BB) is increased, it is difficult to detect a small current by the magnetic detection element (Hall element). On the contrary, the accuracy is reduced. That is, in this case as well, the so-called dynamic range (detection range) is not eventually expanded.

  The present invention has been made in view of such circumstances, and provides a current sensor and a current detection method capable of performing highly accurate current detection over a wide detection range (dynamic range) from a small current to a large current. The purpose is to do.

  In order to achieve such an object, according to the first aspect of the present invention, the second magnet is further separated from the first magnetism so as to cancel the first magnetism generated due to the current flowing through the detection target. Based on the intensity of the second magnetism, the first magnetism by the detected object is canceled by the second magnetism under the magnetic detection by the magnetic detection element. As a current sensor for detecting a flowing current, the magnetic detection element includes a plurality of magnetic detection elements arranged so that the strength of the first magnetism received from the detected object is different, and the detected detection target According to the current value of the body, the current flowing through the detected body is detected while switching the magnetic detection elements.

  As described above, if a magnetic detection element such as a Hall element is disposed at a position where the magnetic intensity received from the detection target is small (for example, away from the detection target), a large current can be detected with this magnetic detection element. Is possible. However, the current cannot be detected with high accuracy in a minute current region. In this regard, as in the above-described configuration of the first aspect, a magnetic detection element is further disposed at a position where the magnetic intensity received from the detection target is large (for example, close to the detection target). If it is possible to switch these magnetic detection elements according to the magnitude of the current value, it is possible to perform highly accurate current detection not only in the large current region but also in the small current region. In other words, if such a configuration is adopted as the current sensor, it is possible to perform highly accurate current detection over a wide detection range (dynamic range) from a small current to a large current.

  Specifically, according to the invention described in claim 2, the switching of the magnetic detection element is performed with a current value of the detected object and a threshold value (threshold value) set for the same current value. When the current value of the detected object exceeds a threshold value, the current value of the detected object falls below the threshold value, and the current value of the detected object falls below the threshold value. On the contrary, by configuring the magnetic detection element to switch to a magnetic detection element having a higher magnetic intensity received from the detected object, the magnetic force received from the detected object in a small current region A magnetic detection element having a higher strength is selected, and a magnetic detection element having a lower magnetic strength received from the detected object is selected in the region of a large current. That is, in each of these regions, highly accurate current detection is performed through the selected magnetic detection element, and as a result, highly accurate current detection is realized over a wide detection range (dynamic range). .

  In this case, as in the invention according to claim 3, while monitoring the current flowing through the detected object, based on the comparison between the monitored current value and a threshold value set for the same current value. If a signal switching determination circuit for switching the plurality of magnetic detection elements is provided, the current sensor according to claim 2 can be easily and accurately realized with a simple circuit configuration.

  Furthermore, in order to prevent frequent switching in the vicinity of the threshold value, as in the invention according to claim 4, in the current sensor according to claim 2 or 3, the threshold value related to switching of the magnetic detection element is set. It is desirable to set different values for different switching directions, that is, to give a so-called hysteresis characteristic to the same threshold value.

  Further, according to the invention described in claim 5, in the current sensor according to any one of claims 1 to 4, the first magnetism received from the detected body is arranged to have different strengths. If the plurality of magnetic detection elements formed are configured to be a plurality of magnetic detection elements arranged at different distances from the main current path, which is the portion with the highest current density of the detection target, The current sensor according to any one of claims 1 to 4 is also easily and accurately realized.

  Specifically, the magnetism (first magnetism) generated from the detected object as the current (detected current) flows is not only the distance from the detected object but also the current density of the current flowing through the detected object. It also depends on. That is, the main current path, which is actually the portion with the highest current density of the detected object, rather than the simple distance from the detected object, determines the magnitude of magnetism applied to the magnetic detection element. The distance from is more important.

  That is, for example, as in the sixth aspect of the present invention, a plurality of magnetic detection elements arranged at different distances from the main current path are arranged on the basis of the length of the distance from the opposing surface of the detected object. Thus, by making the distance from the main current path different (different), the current sensor according to any one of claims 1 to 4 can be realized more easily and accurately. become.

  Furthermore, in the current sensor according to any one of claims 1 to 4, when a main current path that is a portion with the highest current density of the detected object corresponds to a central portion of the detected object. For example, according to the seventh aspect of the present invention, a plurality of magnetic detection elements arranged so as to have different distances from the main current path are different in the degree of separation from the center to the end side The current sensor according to any one of claims 1 to 4 is more easily and accurately realized by making the distance from the main current path different (different) based on Become so.

  In the current sensor according to any one of the first to seventh aspects, when the current is detected, a current is connected to a feedback wiring different from the detected object, as in the invention according to the eighth aspect. (Feedback current) is caused to flow to generate the second magnetism, while the current flowing through the feedback wiring (feedback current) is feedback controlled and the first magnetism is canceled out by the second magnetism. It is desirable that the current flowing through the detected object (detected current) is detected based on the magnetic intensity of the current. By carrying out like this, the current sensor as described in any one of the above-mentioned claims 1 to 7 is suitably realized.

  The current sensor according to any one of claims 1 to 8, wherein the plurality of magnetic detection elements include a magnetic field parallel to the wafer surface based on the Hall effect, according to the invention according to claim 9. It is effective to use a vertical Hall element that detects a component. Since this magnetic detection element (vertical Hall element) detects a magnetic field component parallel to the wafer surface, according to such a configuration, no large wiring is required, that is, on the Hall element as appropriate. It is possible to generate magnetism (magnetic field) corresponding to the second magnetism simply by arranging (pattern formation). In addition, even when a large wiring is separately provided, it is possible to improve the accuracy of the first magnetic cancellation (and thus the current detection) through the magnetic adjustment by the wiring on the Hall element. become.

  Furthermore, when a hall element is arranged on a substrate, particularly when a plurality (or many) of the hall elements are arranged on the same substrate (same chip), in a general horizontal hall element, a drive current is applied in a direction parallel to the substrate surface. In order to detect the magnetism by flowing, a large area is required on the substrate, which is restricted by space. In this respect, in the case of the above vertical Hall element, since a drive current flows in a direction perpendicular to the substrate surface, even when a plurality of them are arranged on the same substrate, the space restriction is eased and a simple structure is achieved. It can also be maintained.

  Further, according to the invention described in claim 10, in the current sensor according to any one of claims 1 to 9, the detected object is disposed on a bar-shaped conductor and a printed board. It is more effective when applied to either one of wiring. Specifically, it is desirable to employ a rod-shaped conductor as the detected object if the current to be detected is a large current, or a wire disposed on the printed circuit board if the current is small.

  On the other hand, the second magnetism is further generated separately from the first magnetism so as to cancel the first magnetism generated based on the current flowing through the detected object. And detecting the current flowing through the detected object based on the intensity of the second magnetism while canceling the first magnetism generated by the detected object with the second magnetism under the magnetic detection by the magnetic detection element. As the current detection method, a plurality of magnetic detection elements are provided as the magnetic detection elements, which are arranged such that the distance from the main current path, which is the portion with the highest current density of the detected object, is different, and the detection Even when the current flowing through the detected object is detected while switching the magnetic detection elements according to the magnitude of the current value of the detected object, the invention according to claim 1 Similarly, a wider detection range ( Over dynamic range), it is possible to perform highly accurate current detection.

Hereinafter, an embodiment in which a current sensor and a current detection method according to the present invention are embodied will be described with reference to FIGS.
First, the configuration of this current sensor will be described in detail with reference to FIGS. 1 is a perspective view showing a schematic configuration of the sensor, FIG. 2 is a front view seen from the arrow A side in FIG. 1, and FIG. 3 is a plan view seen from the arrow C side in FIG. FIG. 4 is a side view seen from the arrow B side in FIG.

  As shown in FIGS. 1 to 4, this current sensor is also the same as the sensor shown in FIG. 11. Direction, etc.). However, in this sensor, a vertical Hall element that detects magnetism in a direction parallel to the wafer surface (chip surface) is employed as the magnetic detection element. The vertical Hall element is connected to the peripheral circuit (in the vicinity of the bus bar BB (for example, a rod-shaped conductor for power supply connected to the vehicle battery)), particularly in the center (corresponding to the main current path). Two integrated chips (Hall ICs) CP1 and CP2 integrated together with a signal processing circuit, a correction circuit, and the like are arranged so that the distances from the facing surface of the bus bar BB are different (different). Specifically, the integrated chip CP2 is arranged farther from the facing surface of the bus bar BB than the integrated chip CP1.

  Also in this sensor, similarly to the sensor shown in FIG. 11, a feedback wiring RB made of an appropriate wiring material (for example, aluminum) is further provided in the vicinity of the bus bar BB, and a current (feedback) is supplied to the feedback wiring RB. By causing a current to flow, a magnetism (second magnetism) that cancels the magnetism (first magnetism) generated due to the current flowing through the bus bar BB is generated.

FIG. 5 is a perspective view showing the structure of the integrated chips (Hall ICs) CP1 and CP2, particularly the internal structure thereof in more detail.
As shown in FIG. 5, the chips CP1 and CP2 each have a built-in vertical Hall element TH, and a wiring W made of, for example, aluminum is provided on the vertical Hall element TH. Further, even when a current (feedback current) is caused to flow through the wiring W, a magnetism (second magnetism B2) that cancels the magnetism (first magnetism B1) generated due to the current flowing through the bus bar BB. It can be generated. The magnetic detection direction of the vertical Hall element TH, that is, the direction parallel to the wafer surface (chip surface) corresponds to the horizontal (left and right) direction of FIG.

FIG. 6 is a block diagram showing a schematic configuration of the entire sensor unit.
As shown in FIG. 6, this current sensor (sensor unit) switches the outputs of these chips in addition to the integrated chip CP1 (first Hall IC) and the integrated chip CP2 (second Hall IC). It further includes a switching element SW, a signal switching determination circuit RC that controls driving of the switching element SW, and the like. Then, when the switching element SW is appropriately switched by the signal switching determination circuit RC, only the output signal (Hall voltage) from the integrated chip CP1 or CP2 selected based on the switching is output (corresponding to the sensor output). It is like that. Further, the signal switching determination circuit RC always outputs information related to such switching (from which chip a signal is output, etc.) as a range signal (or at the time of switching).

  As described above, in the sensor according to this embodiment, in order to realize the above-described magnetic balance detection type current detection, a current (feedback current) is caused to flow through the feedback wiring RB, whereby the bus bar BB which is the detection target. The magnetism (second magnetism) is generated separately from the magnetism (first magnetism) that is generated due to the current (current to be detected) flowing through. Then, based on the magnetic detection by the chip (integrated chip CP1 or CP2) selected by the signal switching determination circuit RC, the feedback current flowing in the feedback wiring RB is changed so that the first magnetism is canceled by the second magnetism. While performing feedback control, the current flowing through the detection target (bus bar BB) is detected based on the controlled amount of feedback current (corresponding to the intensity of the second magnetism). That is, in this sensor, the current flowing through the bus bar BB (detected body) is changed while switching the integrated chips CP1 and CP2 (magnetic detection elements) according to the magnitude of the current value of the bus bar BB as the detected body. I try to detect it.

Next, the operation of this sensor will be described with reference to FIGS.
FIG. 7 is a graph showing a switching mode of the current detection method. However, in FIG. 7, the output signal (output voltage) output from the selected integrated chip CP1 or CP2 and the current (detected current) flowing through the bus bar BB (detected body) are respectively represented by the vertical axis. The horizontal axis shows the relationship between these two.

  As shown in FIG. 7, the signal switching determination circuit RC monitors the current (current to be detected) flowing through the bus bar BB (object to be detected) in detail, and the current value same as the monitored current value. Is compared with the threshold value (threshold value) A1 or A2 set for the above, and the switching element SW is switched to either one based on the result of the comparison. That is, when the current value of the bus bar BB increases and exceeds the threshold value A1, the current value of the bus bar BB changes from the integrated chip CP1 (first Hall IC) to the integrated chip CP2 (second Hall IC). Conversely, when the value decreases and falls below the threshold A2, the integrated chip (magnetic detection element) is switched from the integrated chip CP2 to the integrated chip CP1.

FIG. 8 is a flowchart showing an operation example of the current sensor when the current (detected current) flowing through the bus bar BB (detected body) increases.
As shown in FIG. 8, when the detected current is smaller than the threshold value A1, the output signal (output voltage) from the integrated chip CP1 (first Hall IC) is output. However, here, when the detected current exceeds the threshold A1, the switching element SW is switched by the signal switching determination circuit RC, and this time, the output signal (output voltage) from the integrated chip CP2 (second Hall IC) is changed. Will be output. As described above, when the current to be detected increases, the chip (magnetic detection element) is switched (selected) through the series of processes described above. Further, the description is omitted here for convenience, but when the detected current decreases, this series of processing is performed in the reverse order.

Then, according to the current sensor and the current detection method according to this embodiment described above, the following excellent effects can be obtained.
(1) As a magnetic balance detection type current sensor, a plurality of magnetic detection elements (vertical Hall elements) arranged such that the strength of the magnetism (first magnetism) received from the bus bar BB as the detection target is different. The current flowing through the bus bar BB is detected while switching the magnetic detection elements according to the current value of the bus bar BB (detected body). In addition, at this time, the magnetic detection element is switched based on a comparison between the current value of the bus bar BB (detected body) and a threshold value (threshold value) set for the same current value. Specifically, when the current value of the bus bar BB exceeds a threshold value, the integrated chip CP2 having a smaller magnetic strength received from the bus bar BB, and conversely when the current value of the bus bar BB falls below the threshold value, the bus bar BB. The output chip (magnetic detection element) is switched to the integrated chip CP1 having higher magnetic strength. By doing so, a magnetic detection element having a higher magnetic intensity received from the bus bar BB (detected body) is selected in the low current region, and in the high current region, the above-described magnetic detection element is selected. A magnetic detection element having a lower magnetic intensity received from the bus bar BB (detected body) is selected. That is, in each of these regions, highly accurate current detection is performed through the selected magnetic detection element, and as a result, highly accurate current detection is realized over a wide detection range (dynamic range). .

  (2) Further, while monitoring the current flowing through the bus bar BB (detected body), the monitored current value is compared with a threshold set for the current value, and based on the result of the comparison The signal switching determination circuit RC (FIG. 6) for switching the two magnetic detection elements is provided. By doing so, the above-described highly accurate current detection can be easily performed with a simple circuit configuration.

  (3) In addition, as shown in FIG. 7, in this embodiment, the threshold for switching the magnetic detection element is set to different values A1 and A2 depending on the switching direction. This prevents frequent switching around the threshold.

  (4) Distance from integrated surfaces (Hall ICs) CP1 and CP2 to the vicinity of bus bar BB, which is the detection target, particularly the center (corresponding to the main current path) from the opposite surface of bus bar BB Were arranged to be different (different). By doing so, a plurality of magnetic detection elements arranged so that the strength of the magnetism (first magnetism) received from the detected body (bus bar BB) is different can be easily formed while maintaining a simple configuration. Will be.

  (5) When detecting the current, a current (feedback current) is caused to flow through a feedback wiring RB different from the bus bar BB (detected body) to generate magnetism (second magnetism). Then, while feedback controlling the feedback current flowing through the feedback wiring RB, the magnetism (first magnetism) generated due to the current flowing through the bus bar BB (detected body) The current flowing through the detection target (bus bar BB) is detected based on the intensity of the second magnetism (specifically, the amount of feedback current that is feedback-controlled) while canceling with magnetism. By doing so, the above-described highly accurate current detection is suitably performed.

  (6) A vertical Hall element TH (FIG. 5) for detecting a magnetic field component parallel to the wafer surface based on the Hall effect is used as the magnetic detection element (magnetoelectric conversion element) mounted on the integrated chips CP1 and CP2. did. By doing so, it is possible to improve the accuracy of canceling the first magnetism described above through magnetic adjustment by the wiring W on the vertical Hall element TH, and consequently, it is possible to realize highly accurate current detection.

  (7) In this embodiment, a large current is assumed as the current to be detected, and a rod-shaped conductor is employed as the bus bar (detected body). The present invention is practically particularly effective when applied to such a detection target (object to be detected).

(Other embodiments)
The embodiment described above may be modified as follows.
When a sufficiently large magnetism (second magnetism) can be obtained only by the wiring W (FIG. 5) on the vertical Hall element TH and can be appropriately controlled, for example, as shown in FIG. The arrangement of the feedback wiring RB (FIG. 1) may be omitted.

  In addition, in the above embodiment, the integrated chips (Hall ICs) CP1 and CP2 are moved to the vicinity of the bus bar BB that is the detection target, particularly the center thereof (corresponding to the main current path) from the opposite surface of the bus bar BB. The distances (the lengths of the distances) are different (different). However, the present invention is not limited to this. For example, as shown in FIG. 10, the integrated chips CP1 and CP2 are connected to the main current path that is the portion with the highest current density of the bus bar BB that is the detection target, that is, the same bus bar. You may make it arrange | position so that the grade of the space | interval from the center part of BB to the end side may differ (different). Here, an example is shown in which the integrated chip CP2 is arranged farther from the central portion of the bus bar BB to the end side than the integrated chip CP1.

  -The detected object is not limited to the above-mentioned rod-shaped conductor, and is arbitrary. For example, if the current to be detected is a small current, a wiring arranged on a printed circuit board is adopted as the detected object. You can also

  In the embodiment described above, the threshold for switching the current detection method is set to different values A1 and A2 depending on the switching direction (see FIG. 7). However, the present invention is not limited to this, and the same threshold value (one threshold value) may be used regardless of the switching direction.

  In the above embodiment, two magnetic detection elements (vertical Hall elements) are mounted on separate chips. However, it is not limited to this. For example, these magnetic detection elements may be integrated on one chip in order to reduce the size and simplify the sensor unit.

  Further, the number of magnetic detection elements is not limited to two, and is arbitrary. If necessary, three or more magnetic detection elements may be used. However, in this case, a detection range corresponding to the number of magnetic detection elements is provided by increasing the number of thresholds also for the control map shown in FIG.

  As such a magnetic detection element, any element including the magnetoresistive element (MRE) and the like that is not limited to the above-described vertical Hall element can be used. Furthermore, even if it is a Hall element, not only the said vertical Hall element but the horizontal type Hall element which detects the magnetic field component perpendicular | vertical to a wafer surface is also employable suitably.

Furthermore, in order to increase the sensitivity of magnetic detection, the present invention can be similarly applied even to a configuration using a magnetic material for collecting magnets (core).
After all, it has a plurality of magnetic detection elements arranged so that the intensity of the magnetism (first magnetism) received from the detection object is different, and depending on the magnitude of the current value of the detection object, If the current flowing through the detection object is detected while switching the detection element, an effect similar to or equivalent to the effect (1) can be obtained.

The perspective view which shows the outline | summary of the sensor structure of this electric current sensor about one Embodiment of the electric current sensor and electric current detection method which concern on this invention. The front view seen from the A view arrow side in FIG. The top view seen from the C view arrow side in FIG. The side view seen from the B view arrow side in FIG. The perspective view which shows the detail of the structure of an integrated chip, especially the internal structure. The block diagram which shows schematic structure of the whole sensor unit. The graph (control map) which shows the switching aspect of an electric current detection system. The flowchart which shows the operation example of the said current sensor at the time of the current increase of to-be-detected current. The perspective view which shows the outline | summary of the sensor structure of this current sensor about the modification of the current sensor which concerns on the embodiment. Furthermore, the perspective view which shows the outline | summary of the sensor structure of another modification. The perspective view which shows typically the current detection principle of a magnetic balance detection type for the example of the conventional current sensor.

Explanation of symbols

  BB ... Bus bar, CP1, CP2 ... Integrated chip, RB ... Feedback wiring, RC ... Signal switching determination circuit, SW ... Switching element, TH ... Vertical Hall element, W ... Wiring.

Claims (11)

A second magnetism is further generated separately from the first magnetism so as to cancel out the first magnetism generated due to the current flowing through the detection target, and under the magnetic detection by the magnetic detection element, In a current sensor for detecting a current flowing through the detected object based on the intensity of the second magnetism while canceling the first magnetism by the detected object with the second magnetism,
The magnetic detection element includes a plurality of magnetic detection elements arranged so that the intensity of the first magnetism received from the detected object is different, and according to the current value of the detected detected object A current sensor that detects a current flowing through the detected object while switching the magnetic detection elements. The switching of the magnetic detection element is performed based on a comparison between the current value of the detected object and a threshold value set for the current value, and the current value of the detected object exceeds the threshold value. Sometimes, to a magnetic detection element having a lower magnetic intensity received from the detected object, and conversely to a magnetic detection element having a higher magnetic intensity received from the detected object when the current value of the detected object falls below a threshold value. The current sensor according to claim 1, wherein the magnetic detection element is switched. The current sensor according to claim 2,
A signal switching determination circuit that switches the plurality of magnetic detection elements based on a comparison between the monitored current value and a threshold value set for the current value while monitoring the current flowing through the detected object. A current sensor characterized by that. The current sensor according to claim 2, wherein a threshold value related to switching of the magnetic detection element is set to a different value depending on a switching direction. The plurality of magnetic detection elements arranged so that the strengths of the first magnetism received from the detection target body are different from each other so that the distances from the main current path that is the portion with the highest current density of the detection target body are different. The current sensor according to any one of claims 1 to 4, wherein the current sensor is a plurality of magnetic detection elements. The plurality of magnetic detection elements arranged so as to have different distances from the main current path have different distances from the main current path based on the length of the distance from the opposing surface of the detected object. The current sensor according to claim 5. The main current path, which is the portion with the highest current density of the detected object, corresponds to the center of the detected object, and a plurality of magnetic detection elements arranged so as to have different distances from the main current path are The current sensor according to claim 5, wherein the distance from the main current path is made different based on a difference in the degree of separation from the center portion to the end side. When detecting the current, a current is passed through a feedback wiring different from the detection target to generate the second magnetism, and the current flowing through the feedback wiring is feedback-controlled while the first magnetism is The current sensor according to any one of claims 1 to 7, wherein the current flowing through the detection target is detected based on the intensity of the second magnetism while canceling with the second magnetism. The current sensor according to any one of claims 1 to 8, wherein each of the plurality of magnetic detection elements is a vertical Hall element that detects a magnetic field component parallel to the wafer surface based on the Hall effect. The current sensor according to any one of claims 1 to 9, wherein the object to be detected is one of a bar-shaped conductor and a wiring disposed on a printed circuit board. A second magnetism is further generated separately from the first magnetism so as to cancel out the first magnetism generated due to the current flowing through the detection target, and under the magnetic detection by the magnetic detection element, In the current detection method for detecting the current flowing through the detected object based on the intensity of the second magnetism while canceling the first magnetism by the detected object with the second magnetism,
As the magnetic detection element, a plurality of magnetic detection elements arranged so as to have different distances from a main current path that is a portion having the highest current density of the detection target are prepared, and the detected detection target A current detection method comprising: detecting a current flowing through the detected object while switching the magnetic detection elements according to the magnitude of a current value.

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