JP2019033217A - Photoelectric conversion element manufacturing method - Google Patents

Abstract

To achieve an in-line manufacturing process of manufacturing a photoelectric conversion element by using a downsized deposition device.SOLUTION: A photoelectric conversion element manufacturing method of the present disclosure is a manufacturing method of a photoelectric conversion element including a first thin film which has first and second principal surfaces and formed at a first principal surface side of a semiconductor substrate and a second thin film which is formed at a second principal surface side of the semiconductor substrate, and comprises: a first arrangement step of arranging at a first deposition position in a first deposition chamber, a first semiconductor substrate where a first thin film and a second thin film are not formed; a second arrangement step of arranging at a second deposition position in the first deposition chamber, a second semiconductor substrate where at least a first thin film is formed at the first principal surface side and a second thin film is not formed at the second principal surface side; and a first deposition step of forming, in the first deposition chamber, a first thin film at the first principal surface side of the first semiconductor substrate and a second thin film at the second principal surface side of the second semiconductor substrate.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method for manufacturing a photoelectric conversion element.

  In the following Patent Document 1, a step of forming a first intrinsic amorphous silicon layer on a surface side of a semiconductor substrate in a first film forming chamber, and a semiconductor substrate in a direction perpendicular to the surface of the semiconductor substrate in a moving chamber are disclosed. A step of exposing the back surface side of the semiconductor substrate by moving, and a step of forming a second intrinsic amorphous silicon layer on the back surface side of the semiconductor substrate in the third film forming chamber. A method is disclosed. The first film forming chamber, the transfer chamber, and the third film forming chamber are connected in series via another film forming chamber or the like, and constitute a so-called in-line type film forming apparatus.

JP 2013-118351 A

  However, the conventional manufacturing method has a problem that it is difficult to downsize the film forming apparatus. That is, in the above conventional manufacturing method, a first film forming chamber for forming a predetermined thin film on the first main surface side of the semiconductor substrate, and the predetermined thin film on the second main surface side of the semiconductor substrate. It is difficult to reduce the size of the film forming apparatus because the third film forming chamber for forming a thin film made of the same material must be separately provided to constitute an in-line manufacturing process. It was.

  The present invention has been made in view of the above problems, and an object thereof is to realize an in-line manufacturing process in which a photoelectric conversion element is manufactured using a miniaturized film forming apparatus.

  (1) In the method for manufacturing a photoelectric conversion element according to the present disclosure, the photoelectric conversion element has a first main surface and a second main surface, and at least a first thin film, a semiconductor substrate, and a second thin film In this order, the manufacturing method includes a first arrangement step, a second arrangement step, and a first film forming step. In the first arrangement step, the first thin film and the The first semiconductor substrate on which the second thin film is not formed is arranged at the first film-forming position in the first film-forming chamber, and in the second arrangement step, the first main surface side is arranged on the first main surface side. A second semiconductor film forming position in the first film forming chamber is formed with a second semiconductor substrate on which at least the first thin film is formed and the second thin film is not formed on the second main surface side. In the first film forming step, in the first film forming chamber, the first film forming step The step of forming a film on the first main surface side of the first semiconductor substrate is the same as the step of forming the second thin film on the second main surface side of the second semiconductor substrate. The manufacturing method of the photoelectric conversion element performed within a period.

  (2) In the manufacturing method of the photoelectric conversion element in the above (1), the first thin film and the second thin film may be a manufacturing method having a common composition.

  (3) In the manufacturing method of the photoelectric conversion element in the above (1) to (2), the first thin film and the second thin film may be a manufacturing method formed using a common source gas.

  (4) In the manufacturing method of the photoelectric conversion element in the above (1) to (3), in the first film forming step, the film forming condition of the first thin film at the first film forming position, and the first It is good also as a manufacturing method which makes the film forming conditions of the said 2nd thin film in 2 film forming positions differ.

  (5) The manufacturing method of the photoelectric conversion element in the above (1) to (4) further includes a reversing step and a transporting step, and in the reversing step, the first film forming step that has undergone the first film forming step. The first main surface side and the second main surface side of a semiconductor substrate are reversed, and in the transfer step, the first semiconductor substrate that has undergone the first film forming step is used as the second semiconductor substrate. It is good also as a manufacturing method which conveys to said 1st film forming chamber as a board | substrate.

  (6) The manufacturing method of the photoelectric conversion element in the above (1) to (5) is a manufacturing method in which the first thin film and the second thin film formed in the first film forming step are intrinsic semiconductor layers. It is good also as a method.

  (7) In the method for manufacturing a photoelectric conversion element in the above (1) to (6), the first film forming chamber includes a first cathode electrode, a second cathode electrode, and the first cathode electrode. A first anode electrode disposed between the first cathode electrode and the second cathode electrode, wherein in the first disposing step, the first main surface side of the first semiconductor substrate is the first cathode electrode. The first semiconductor substrate is disposed at the first film forming position so as to face the electrode side, and in the second disposing step, the second main surface side of the second semiconductor substrate is the second film surface. The second semiconductor substrate is disposed at the second film formation position so as to face the cathode electrode side of the first film formation position, and in the first film formation step, the first film formation position and the second film formation are performed. It is good also as a manufacturing method which produces plasma discharge in a position.

  (8) In the method for manufacturing a photoelectric conversion element in the above (1) to (7), the first arrangement step and the second arrangement step may be performed substantially simultaneously.

  (9) The method for manufacturing a photoelectric conversion element in the above (1) to (8) further includes a third arrangement step, a fourth arrangement step, and a second film forming step, and the third arrangement step. In the disposing step, in the second film forming chamber connected in series to the first film forming chamber, the first semiconductor substrate is disposed at a third film forming position in the second film forming chamber. In the fourth arrangement step, in the second film formation chamber, the second semiconductor substrate is arranged at a fourth film formation position in the second film formation chamber, and the second film formation step. Then, in the second film forming chamber, the first conductive semiconductor layer is not formed on the second main surface side of the second thin film in the second semiconductor substrate, and the first conductive semiconductor layer is not formed. The first conductive semiconductor layer is formed on the first main surface side of the first thin film in the semiconductor substrate. It may be used as the production method.

  (10) In the method for manufacturing a photoelectric conversion element in (9), the second film forming chamber includes a third cathode electrode, a fourth cathode electrode, the third cathode electrode, and the fourth cathode electrode. And a second anode electrode disposed between the first semiconductor substrate and the first main surface side of the first semiconductor substrate facing the third cathode electrode side in the third arrangement step. As described above, the first semiconductor substrate is arranged at the third film forming position, and in the fourth arrangement step, the second main surface side of the second semiconductor substrate is on the fourth cathode electrode side. The second semiconductor substrate may be disposed at the fourth film forming position so as to face the surface, and in the second film forming step, plasma discharge may be generated at the third film forming position. .

  (11) In the method for manufacturing a photoelectric conversion element in (10) above, in the second film forming step, the source gas used for forming the first conductive semiconductor layer is supplied at the fourth film forming position. It is good also as a manufacturing method which does not.

  (12) In the method for manufacturing a photoelectric conversion element in (11) above, the third arrangement step and the fourth arrangement step may be performed substantially simultaneously.

  (13) The method for manufacturing a photoelectric conversion element in the above (9) to (12) further includes a fifth arrangement step, a sixth arrangement step, and a third film formation step, In the disposing step, in the third film forming chamber connected in series to the second film forming chamber, the first semiconductor substrate is disposed at a fifth film forming position in the third film forming chamber. In the sixth arrangement step, in the third film formation chamber, the second semiconductor substrate is arranged at a sixth film formation position in the third film formation chamber, and the third film formation is performed. In the step, in the third film forming chamber, the second conductive semiconductor layer is not formed on the first main surface side of the first conductive semiconductor layer in the first semiconductor substrate, and the second conductive semiconductor layer is not formed. The second conductive type semiconductor is disposed on the second main surface side of the second thin film in the second semiconductor substrate. It may be a manufacturing method for forming the layer.

  (14) In the method for manufacturing a photoelectric conversion element in (13), the third film forming chamber includes a fifth cathode electrode, a sixth cathode electrode, the fifth cathode electrode, and the sixth cathode electrode. A third anode electrode disposed between the first semiconductor substrate and the cathode electrode; and in the fifth arrangement step, the first main surface side of the first semiconductor substrate faces the fifth cathode electrode side. As described above, the first semiconductor substrate is arranged at the fifth film forming position, and in the sixth arrangement step, the second main surface side of the second semiconductor substrate is on the sixth cathode electrode side. The second semiconductor substrate may be disposed at the sixth film forming position so as to face the surface, and in the third film forming step, plasma discharge may be generated at the sixth film forming position. .

  (15) In the method for producing a photoelectric conversion element in (14), in the third film forming step, a source gas used for forming the second conductive semiconductor layer is supplied at the fifth film forming position. It is good also as a manufacturing method which does not.

  (16) In the method for manufacturing a photoelectric conversion element in the above (13) to (15), the fifth arrangement step and the sixth arrangement step may be performed substantially simultaneously.

  (17) The method for manufacturing a photoelectric conversion element in the above (1) to (8) further includes a third arrangement step, a fourth arrangement step, and a second film forming step, and the third arrangement step. In the disposing step, in the second film forming chamber connected in series to the first film forming chamber, the first semiconductor substrate is disposed at a third film forming position in the second film forming chamber. In the fourth arrangement step, in the second film formation chamber, the second semiconductor substrate is arranged at a fourth film formation position in the second film formation chamber, and the second film formation is performed. In the step, in the second film forming chamber, the second conductive semiconductor layer is not formed on the first main surface side of the first thin film in the first semiconductor substrate, and the second conductive type semiconductor layer is not formed. Forming the second conductive semiconductor layer on the second main surface side of the second thin film in the semiconductor substrate; It may be used as the manufacturing method that.

  (18) The method for manufacturing a photoelectric conversion element in the above (17) further includes a fifth arrangement step, a sixth arrangement step, and a third film forming step. In the fifth arrangement step, In a third film forming chamber connected in series to the second film forming chamber, the first semiconductor substrate is disposed at a fifth film forming position in the third film forming chamber, and the sixth In the third film forming chamber, the second semiconductor substrate is arranged at a sixth film forming position in the third film forming chamber, and in the third film forming step, In the third film forming chamber, the first semiconductor layer is not formed on the second main surface side of the second conductive semiconductor layer in the second semiconductor substrate without forming the first conductive semiconductor layer. The first conductive semiconductor layer is formed on the first main surface side of the first thin film on the substrate. It may be used as the manufacturing method to be.

  (19) The method for manufacturing a photoelectric conversion element in the above (13) to (16), (18) further includes a fourth film forming step, and in the fourth film forming step, the third film forming chamber. In the fourth film formation chamber connected in series to the first semiconductor substrate, a first transparent conductive layer is formed on the first main surface side of the first conductivity type semiconductor layer in the first semiconductor substrate, and the first It is good also as a manufacturing method which forms a 2nd transparent conductive layer in the said 2nd main surface side of the said 2nd conductivity type semiconductor layer in 2 semiconductor substrates.

  (20) The method for manufacturing a photoelectric conversion element in (19) further includes a fifth film-forming step, and in the fifth film-forming step, a fifth film connected in series to the fourth film-forming chamber. In the film forming chamber, a first insulating film is formed on the first main surface side of the first transparent conductive layer in the first semiconductor substrate, and the second semiconductor substrate in the second semiconductor substrate is formed. It is good also as a manufacturing method which forms a 2nd insulating film in the said 2nd main surface side of a transparent conductive layer.

  (21) In the method for manufacturing a photoelectric conversion element in the above (1) to (20), the second semiconductor substrate is the first semiconductor in which the first thin film is formed in the first film forming step. It is good also as a manufacturing method which is a board | substrate.

FIG. 1 is a schematic plan view showing the surface side (light receiving surface side) of the photoelectric conversion element according to this embodiment. FIG. 2 is a schematic cross-sectional view showing a cross section taken along line II-II in FIG. FIG. 3 is a schematic perspective view showing a substrate holder used in the method for manufacturing a photoelectric conversion element according to this embodiment. FIG. 4 is a schematic top view showing a film forming apparatus used in the method for manufacturing a photoelectric conversion element according to this embodiment. FIG. 5 is a schematic cross-sectional view showing the process of manufacturing the photoelectric conversion element according to this embodiment. FIG. 6 is a schematic cross-sectional view showing the process of manufacturing the photoelectric conversion element according to this embodiment. FIG. 7 is a schematic cross-sectional view showing the process of manufacturing the photoelectric conversion element according to this embodiment. FIG. 8 is a schematic cross-sectional view showing the process of manufacturing the photoelectric conversion element according to this embodiment. FIG. 9 is a schematic top view showing a film forming apparatus used in the method for manufacturing a photoelectric conversion element according to this embodiment. FIG. 10 is a schematic top view showing another example of the film forming apparatus used in the method for manufacturing a photoelectric conversion element according to this embodiment.

  Embodiments of the present disclosure will be described below with reference to the drawings.

[Photoelectric conversion element 100]
FIG. 1 is a schematic plan view showing the surface side (light receiving surface side) of the photoelectric conversion element 100 according to the present embodiment.

  As shown in FIG. 1, the photoelectric conversion element 100 of this embodiment includes a photoelectric conversion unit 8 and a current collecting electrode 2 provided on the surface side of the photoelectric conversion unit 8. The current collecting electrode 2 includes two wide bus bar electrodes 2A substantially parallel to one side of the semiconductor substrate included in the photoelectric conversion unit 8, and a plurality of narrow finger electrodes 2B substantially perpendicular to the bus bar electrode 2A. Including.

  In the present embodiment, the current collecting electrode 2 is also provided on the back surface side of the photoelectric conversion unit 8. The current collecting electrode 2 on the front surface side has the first polarity and the current collecting electrode 2 on the back surface side. Has a polarity opposite to the first polarity. In the present embodiment, the current collecting electrode 2 on the front surface side is a positive electrode, and the current collecting electrode 2 on the back surface side is a negative electrode.

  FIG. 2 is a schematic cross-sectional view showing a cross section taken along line II-II in FIG.

  As shown in FIG. 2, the photoelectric conversion element 100 in the present embodiment includes a semiconductor substrate 1 made of, for example, single crystal silicon, polycrystalline silicon, or the like. A first intrinsic semiconductor layer 5A is formed on the front surface side of the semiconductor substrate 1, and a second intrinsic semiconductor layer 5B is formed on the back surface side of the semiconductor substrate 1. A P-type semiconductor layer 3 is formed on the front surface side of the first intrinsic semiconductor layer 5A, and an N-type semiconductor layer 4 is formed on the back surface side of the second intrinsic semiconductor layer 5B. A first transparent conductive layer 6A is formed on the front side of the P-type semiconductor layer 3, and a second transparent conductive layer 6B is formed on the back side of the N-type semiconductor layer 4.

[Production Method of Photoelectric Conversion Element]
Hereinafter, the manufacturing method of the photoelectric conversion element 100 according to the present embodiment will be described with reference to the drawings.

  FIG. 3 is a schematic perspective view showing the substrate holder 200 used in the method for manufacturing the photoelectric conversion element 100 according to this embodiment.

  As shown in FIG. 3, the substrate holder 200 includes a first holder 31, a second holder 32, and a holding portion 33 that holds the first holder 31 and the second holder 32. The first holder 31 and the second holder 32 each have a substrate placement surface, the surface of the first holder 31 opposite to the substrate placement surface, and the side of the second holder 32 opposite to the substrate placement surface. It is arrange | positioned so that the surface of this may face.

  FIG. 4 is a schematic top view showing a film forming apparatus 300 used in the method for manufacturing the photoelectric conversion element 100 according to this embodiment.

  As shown in FIG. 4, the film forming apparatus 300 used in the present embodiment includes a first film forming chamber 61 for forming an intrinsic semiconductor layer and a second film forming chamber 62 for forming a first conductivity type semiconductor layer. And a third deposition chamber 63 for depositing the second conductivity type semiconductor layer. The film forming chambers are connected in series, and the film forming apparatus 300 constitutes an in-line type plasma CVD (chemical vapor deposition) apparatus. The substrate holder 200 carried into the first film forming chamber 61 has a third structure. In the direction of the film forming chamber 63, the film is conveyed in a forward direction.

  Furthermore, the film forming apparatus 300 according to the present embodiment includes a transport unit 64 for returning the substrate holder 200 from the third film forming chamber 63 to the first film forming chamber 61. The semiconductor substrate 1 that has undergone the film forming process in the film chamber 63 is subjected to the film forming process in the first film forming chamber 61 again.

  The first film forming chamber 61 includes a first cathode electrode 71 and a second cathode electrode 72 connected to a high-frequency power source, and a first anode electrode 51 in a grounded state. A first cathode electrode 71 and a second cathode electrode 72 are disposed at both ends of the chamber 61, and a first anode electrode 51 is disposed between the first cathode electrode 71 and the second cathode electrode 72. The substrate holder 200 holding the first holder 31 and the second holder 32 is transferred to the first film forming chamber 61 and is electrically connected to the first anode electrode 51. The first holder 31 and the second holder 32 are integrated with the first anode electrode 51 and function as an anode. Between the first cathode electrode 71 and the first anode electrode 51 is a first film-forming position 81, and between the second cathode electrode 72 and the first anode electrode 51 is a second film-forming position 82. To do. When the first high frequency power supply 91 connected to the first cathode electrode 71 is turned on, a plasma discharge is generated between the first cathode electrode 71 and the first anode electrode 51. In addition, when the second high-frequency power source 92 connected to the second cathode electrode 72 is turned on, plasma discharge is generated between the second cathode electrode 72 and the first anode electrode 51.

  In the present embodiment, the first cathode electrode 71 and the second cathode electrode 72 are showerhead electrodes, and have a gas inlet through which a raw material gas or the like is supplied.

  In the present embodiment, the first anode electrode 51 has a built-in heater, and the temperature of the first holder 31 and the second holder 32 disposed in the vicinity of the first anode electrode 51 during film formation. Can be raised.

  Therefore, the first film forming chamber 61 in the present embodiment supplies a silicon-containing gas or the like serving as a source gas from the first cathode electrode 71 and the second cathode electrode 72 and also supplies the first anode electrode 51 to the first anode electrode 51. The semiconductor substrate 1 placed on the substrate holder 200 is heated using a built-in heater, and the first high-frequency power supply 91 and the second high-frequency power supply 92 are turned on, so that the first cathode electrode 71 is turned on. A plasma discharge is generated between the first and second anode electrodes 51 and 51 and between the second cathode electrode 72 and the first anode electrode 51 to ionize the source gas. By depositing the ionized source gas component on the front surface or the back surface of the semiconductor substrate 1, an intrinsic semiconductor layer is formed.

  The second film forming chamber 62 includes a third cathode electrode 73, a fourth cathode electrode 74, and a grounded second anode electrode 52. The third cathode electrode 73 and the second anode electrode 52 are provided. A third film forming position 83 is formed between the electrodes 52 and a fourth film forming position 84 is formed between the fourth cathode electrode 74 and the second anode electrode 52. The third cathode electrode 73 is connected to the third high-frequency power source 93, and the fourth cathode electrode 74 is connected to the fourth high-frequency power source 94. The configuration of the third cathode electrode 73, the fourth cathode electrode 74, the second anode electrode 52, the third high-frequency power source 93, and the fourth high-frequency power source 94 is basically the first film forming chamber 61. Since the first cathode electrode 71, the second cathode electrode 72, the first anode electrode 51, the first high-frequency power source 91, and the second high-frequency power source 92 have the same configuration, the description thereof is omitted.

  The third film forming chamber 63 includes a fifth cathode electrode 75, a sixth cathode electrode 76, and a third anode electrode 53 that is grounded. The fifth cathode electrode 75 and the third anode electrode 53 are provided. A fifth film forming position 85 is defined between the electrodes 53, and a sixth film forming position 86 is defined between the sixth cathode electrode 76 and the third anode electrode 53. The fifth cathode electrode 75 is connected to the fifth high-frequency power source 95, and the sixth cathode electrode 76 is connected to the sixth high-frequency power source 96. The configuration of the fifth cathode electrode 75, the sixth cathode electrode 76, the third anode electrode 53, the fifth high-frequency power source 95, and the sixth high-frequency power source 96 is basically the first film forming chamber 61. Since the first cathode electrode 71, the second cathode electrode 72, the first anode electrode 51, the first high-frequency power source 91, and the second high-frequency power source 92 have the same configuration, the description thereof is omitted.

  In the present embodiment, a configuration in which the film forming apparatus 300 includes three film forming chambers has been described as an example. However, another film forming chamber may be interposed between the film forming chambers. That is, the above-mentioned “each film forming chamber is connected in series” includes a configuration in which each film forming chamber is indirectly connected in series via another film forming chamber.

  In this embodiment, the first conductivity type semiconductor is a P-type semiconductor, the second conductivity type semiconductor is an N-type semiconductor, a P-type semiconductor layer is formed in the second film formation chamber 62, and the third manufacture is performed. A method for forming an N-type semiconductor layer in the film chamber 63 will be described as an example. However, a method in which the first conductive semiconductor is an N-type semiconductor and the second conductive semiconductor is a P-type semiconductor may be used.

[Step of Disposing First Semiconductor Substrate at First Film-Forming Position of First Film-Forming Chamber]
First, the semiconductor substrate 1 in which the intrinsic semiconductor layer is not formed on either the front surface side or the back surface side is prepared. As the semiconductor substrate 1, for example, a single crystal silicon substrate or a polycrystalline silicon substrate can be used. When a single crystal silicon substrate is used as the semiconductor substrate 1, the semiconductor substrate 1 contains impurities for supplying electric charges to silicon in order to provide conductivity. As a specific example, a single crystal silicon substrate contains an n-type containing an atom (for example, phosphorus) for introducing an electron into a silicon atom and an atom (for example, boron) for introducing a hole into a silicon atom. There is a p-type. When holes and electrons are compared, electrons having a smaller effective mass and scattering cross section generally have a higher mobility. From the above viewpoint, it is desirable to use an n-type single crystal silicon substrate as the semiconductor substrate 1. The semiconductor substrate 1 is desirably a substrate having fine irregularities (textures) on the surface. This is because the light intake efficiency can be improved by the fine unevenness.

  The semiconductor substrate 1 is placed on the substrate placement surface of the first holder 31 shown in FIG. At this time, the semiconductor substrate 1 is placed on the substrate placement surface of the first holder 31 with the back surface of the semiconductor substrate 1 facing the first holder 31 so that the front side of the semiconductor substrate 1 is exposed.

  Here, in the present embodiment, the semiconductor substrate 1 in which a desired thin film is not formed on either the front surface side or the back surface side is referred to as a “first semiconductor substrate”.

  The substrate holder 200 on which the first semiconductor substrate is placed on the first holder 31 is carried into the first film forming chamber 61. At this time, the first holder 31 and the second holder 32 are electrically connected to the first anode electrode 51, the first holder 31 is disposed at the first film forming position 81 described above, and the second holder 32. Is disposed at the second film forming position 82 described above.

[First intrinsic semiconductor layer deposition step]
When the first semiconductor substrate is disposed at the first film forming position 81, the door of the first film forming chamber 61 is closed, and the inside of the first film forming chamber 61 is evacuated, and then the shower head electrode. A silicon-containing gas or the like serving as a source gas is supplied from the first cathode electrode 71. In the present embodiment, SiH ₄ gas and H ₂ gas are supplied to the first film forming position 81.

In the present embodiment, the semiconductor substrate 1 placed on the first holder 31 is heated using the heater built in the first anode electrode 51 to turn on the first high-frequency power source 91. A plasma discharge is generated between the first cathode electrode 71 and the first anode electrode 51. Due to the occurrence of this plasma discharge, the source gas SiH ₄ gas and H ₂ gas are ionized, and as shown in FIG. 5, the first intrinsic semiconductor layer is formed on the surface of the semiconductor substrate 1 as the first semiconductor substrate. An intrinsic amorphous silicon layer is formed as 5A.

[First Conductive Type Semiconductor Layer Film Formation Step]
When the first intrinsic semiconductor layer 5 </ b> A is formed on the surface of the semiconductor substrate 1, the door of the first film forming chamber 61 is opened, and the substrate holder 200 is moved into the second film forming chamber 62. In the second film forming chamber 62, the first holder 31 and the second holder 32 are electrically connected to the second anode electrode 52, and the first holder 31 is disposed at the third film forming position 83 described above. Then, the second holder 32 is disposed at the fourth film forming position 84 described above. Thereafter, the door of the second film forming chamber 62 is closed, and the inside of the second film forming chamber 62 is evacuated, and then the inside of the second film forming chamber 62 starts from the third cathode electrode 73 which is a shower head electrode. The third film forming position 83 is supplied with SiH ₄ gas and H ₂ gas as source gases and hydrogen-diluted B ₂ H ₆ gas as dopant addition gas. Since the addition amount of the dopant impurity is good in trace amounts, it may be used a mixed gas diluted beforehand with SiH ₄ and H _2.

  In the present embodiment, the semiconductor substrate 1 placed on the first holder 31 is heated using the heater built in the second anode electrode 52, and the third high-frequency power source 93 is turned on. A plasma discharge is generated between the third cathode electrode 73 and the second anode electrode 52. As a result of this plasma discharge, a P-type semiconductor layer 3 as a first conductivity type semiconductor layer is formed on the surface side of the first intrinsic semiconductor layer 5A as shown in FIG.

As the P-type semiconductor layer 3, a P-type amorphous silicon layer or a P-type microcrystalline silicon layer is preferably used. In addition, at the time of forming the P-type semiconductor layer 3, by adding a gas containing a different element such as CH ₄ , CO ₂ , NH ₃ , and GeH ₄ to alloy the silicon thin film, the energy of the silicon thin film is obtained. You can also change the gap. In addition, impurities such as oxygen and carbon may be added in a small amount in order to improve light transmittance. In that case, it can be formed by introducing a gas such as CO ₂ or CH ₄ during the CVD film formation.

[Third film forming chamber passage step]
When the P-type semiconductor layer 3 is deposited on the surface side of the first intrinsic semiconductor layer 5A, the door of the second deposition chamber 62 is opened and the substrate holder 200 is moved into the third deposition chamber 63. . In the third film forming chamber 63, the first holder 31 and the second holder 32 are electrically connected to the third anode electrode 53, and the first holder 31 is placed at the fifth film forming position 85 described above. The second holder 32 is disposed at the sixth film forming position 86 described above.

  In the present embodiment, the third deposition chamber 63 is a deposition chamber for depositing the N-type semiconductor layer 4, and the N-type semiconductor layer 4 is not formed on the surface side of the P-type semiconductor layer 3. The semiconductor substrate 1 placed on the first holder 31 arranged at the film forming position 85 is passed through the third film forming chamber 63 without performing any film formation. That is, in the third deposition chamber passing step, the fifth high-frequency power source 95 connected to the fifth cathode electrode 75 is turned off, and the semiconductor substrate 1 placed on the first holder 31 is manufactured. The film is not formed. At that time, no gas may be supplied from the fifth cathode electrode 75 which is a shower head electrode.

[Transfer / Reverse Step]
When the substrate holder 200 passes through the third film forming chamber 63, a transfer step of transferring the substrate holder 200 into the first film forming chamber 61 again by the transfer means 64 described above is performed.

  Here, on the surface side of the semiconductor substrate 1 that has passed through the third film-forming chamber 63, the first intrinsic semiconductor layer 5A and the P-type semiconductor layer 3 are formed as shown in FIG. It has become.

  In this way, the semiconductor substrate 1 in which a desired thin film is formed on the surface side is referred to as a “second semiconductor substrate”.

  Next, the first substrate 31 shown in FIG. 3 is turned over so that the semiconductor substrate 1, which is the second semiconductor substrate placed so that the front side is exposed, is inverted so that the back side is exposed. 2. A reversing step for placing on the substrate placement surface of the holder 32 is performed.

  Furthermore, in the present embodiment, the second semiconductor substrate is moved to the second holder 32, and the substrate mounting surface of the first holder 31 that is in an empty state is desired on both the front side and the back side. A new first semiconductor substrate on which no thin film is formed is placed so that the surface side is exposed.

  Note that either the transporting step or the reversing step may be performed first. That is, the transfer step may be performed after the reversal step is performed at the outlet of the third film forming chamber 63. Alternatively, the reversing step may be performed in the middle of the conveying step.

[Step of Disposing Second Semiconductor Substrate at Second Film Forming Position of First Film Forming Chamber]
When the second semiconductor substrate is placed on the substrate placement surface of the second holder 32 and the first semiconductor substrate is placed on the substrate placement surface of the first holder 31, the substrate holder 200 is moved again to the first place. Into the film forming chamber 61. In the first film forming chamber 61, the first holder 31 and the second holder 32 are electrically connected to the first anode electrode 51, and the first holder 31 is placed at the first film forming position 81 described above. The second holder 32 is disposed at the second film forming position 82 described above.

  That is, the step of disposing the second semiconductor substrate at the second film forming position 82 of the first film forming chamber 61 and the first film forming of the first semiconductor substrate described above in the first film forming chamber 61. The step of arranging at the position 81 is performed substantially simultaneously.

[Second intrinsic semiconductor layer deposition step]
When the first semiconductor substrate is disposed at the first film deposition position 81 and the second semiconductor substrate is disposed at the second film deposition position 82, the door of the first film deposition chamber 61 is closed, and the first The film forming chamber 61 is evacuated. Thereafter, a silicon-containing gas or the like serving as a source gas is supplied from the first cathode electrode 71 and the second cathode electrode 72 that are showerhead electrodes. In the present embodiment, SiH ₄ gas and H ₂ gas are supplied to the first film forming position 81 and the second film forming position 82.

  That is, a common source gas is supplied to the first film forming position 81 and the second film forming position 82. In the present disclosure, even when only the ratio of the supplied source gas is different, it is expressed as “a common source gas is supplied”.

In the present embodiment, a first semiconductor substrate placed on the first holder 31 and a second semiconductor substrate placed on the second holder 32 using a heater built in the first anode electrode 51. Heat. Then, by turning on the first high-frequency power source 91 connected to the first cathode electrode 71, plasma discharge is generated between the first cathode electrode 71 and the first anode electrode 51. Further, by turning on the second high-frequency power source 92 connected to the second cathode electrode 72, plasma discharge is generated between the second cathode electrode 72 and the first anode electrode 51. Due to the occurrence of this plasma discharge, the source gas SiH ₄ gas and H ₂ gas are ionized, and as shown in FIG. 5, the semiconductor substrate 1 which is the first semiconductor substrate placed on the first holder 31 An intrinsic amorphous silicon layer as the first intrinsic semiconductor layer 5A is formed on the surface, and as shown in FIG. 7, the semiconductor substrate 1 which is the second semiconductor substrate placed on the second holder 32 is formed. An intrinsic amorphous silicon layer as the second intrinsic semiconductor layer 5B is formed on the back surface.

  As described above, a common source gas is supplied to the first film forming position 81 and the second film forming position 82, and the first intrinsic semiconductor layer 5A and the second intrinsic semiconductor layer 5B are: Have a common composition.

  In the first film forming chamber 61 in the present embodiment, the first high frequency power source 91 and the second high frequency power source 92 may be configured by a common high frequency power source.

  The second intrinsic semiconductor layer deposition step and the first intrinsic semiconductor layer deposition step described above are performed within the same period. In addition, this "same period" means that the period from when the door of the film formation chamber which accommodates the 1st semiconductor substrate and the 2nd semiconductor substrate is closed until it opens is the same. It includes the case where the film formation on the semiconductor substrate and the film formation on the second semiconductor substrate are not performed strictly at the same time.

  By such a method, a film forming chamber for forming a first thin film (an intrinsic semiconductor layer in the present embodiment) on the front surface side of the semiconductor substrate 1, and the first thin film on the back surface side of the semiconductor substrate 1 Since it is not necessary to separately provide a film forming chamber for forming the second thin film formed using the common source gas, it is possible to reduce the size of the in-line manufacturing apparatus.

  In addition, since the second intrinsic semiconductor layer deposition step and the first intrinsic semiconductor layer deposition step described above can be performed in the same period, an in-line manufacturing process with high productivity can be realized. it can.

  Furthermore, even in the case where the film forming conditions of the first intrinsic semiconductor layer 5A formed on the front surface side of the semiconductor substrate 1 are different from the film forming conditions of the second intrinsic semiconductor layer 5B formed on the back surface side, In the process of the present disclosure, the film formation is performed while the film formation conditions at the first film formation position 81 and the film formation conditions at the second film formation position 82 in the first film formation chamber 61 are kept constant. Therefore, an in-line manufacturing process with high productivity and high film forming quality can be realized. That is, according to the process of the present disclosure, the first holder 31 from which the surface side of the semiconductor substrate 1 is exposed is always carried into the first film forming position 81, and thus the first holder 31 connected to the first cathode electrode 71. The first intrinsic property includes the power condition of the high-frequency power source 91, the ratio and flow rate of the gas supplied to the first deposition position 81, the temperature condition of the first deposition position 81, the deposition pressure condition, and the like. It is possible to fix the conditions for forming the semiconductor layer 5A. Further, since the second holder 32 with the back surface side exposed of the semiconductor substrate 1 is always carried into the second film forming position 82, the power condition of the second high-frequency power source 92 connected to the second cathode electrode 72, In order to deposit the second intrinsic semiconductor layer 5B, the ratio of the gas supplied to the second deposition position 82, the flow rate condition, the temperature condition of the second deposition position 82, the deposition pressure condition, etc. It is possible to fix to these conditions.

[Second film forming chamber passing step]
When the first intrinsic semiconductor layer 5A is deposited on the surface of the first semiconductor substrate and the second intrinsic semiconductor layer 5B is deposited on the back surface of the second semiconductor substrate, the first deposition chamber 61 The door is opened and the substrate holder 200 is moved into the second film forming chamber 62. In the second film forming chamber 62, the second anode electrode 52 is disposed between the first holder 31 and the second holder 32, and the first holder 31 is disposed at the third film forming position 83 described above. The second holder 32 is disposed at the fourth film forming position 84 described above. In the present embodiment, the step in which the first holder 31 is disposed at the third film forming position 83 and the step in which the second holder 32 is disposed at the fourth film forming position 84 are performed substantially simultaneously. .

  In the present embodiment, the second film forming chamber 62 is a film forming chamber for forming the P-type semiconductor layer 3, and the P-type semiconductor layer 3 is not formed on the back side of the second intrinsic semiconductor layer 5B. The second semiconductor substrate placed on the second holder 32 disposed at the fourth film forming position 84 is passed through the second film forming chamber 62 without performing any film formation. That is, in the second film forming chamber passage step, the fourth high frequency power supply 94 connected to the fourth cathode electrode 74 is turned off, and the second semiconductor substrate placed on the second holder 32 is removed. The film is not formed. At that time, no gas may be supplied from the fourth cathode electrode 74 which is a shower head electrode. When the fourth cathode electrode 74 and the third cathode electrode 73 are connected to a common gas cylinder, only the gas supply to the fourth cathode electrode 74 side is stopped using an electromagnetic valve. Also good.

  In addition, this 2nd film forming chamber passage step can be performed in the same period as the first conductive type semiconductor layer film forming step described above. That is, the fourth high-frequency power source 94 connected to the fourth cathode electrode 74 is left in an OFF state, and the fourth film formation position 84 is applied to the second semiconductor substrate placed on the second holder 32. On the other hand, the third high-frequency power source 93 connected to the third cathode electrode 73 is turned on while no film is formed, and various gases are supplied from the third cathode electrode 73 which is a shower head electrode. In the third deposition position 83, the P-type semiconductor layer 3 can be formed on the surface of the first intrinsic semiconductor layer 5A formed on the surface side of the first semiconductor substrate.

[Second conductivity type semiconductor layer deposition step]
When the substrate holder 200 passes through the second film forming chamber 62, the substrate holder 200 is moved into the third film forming chamber 63. In the third film forming chamber 63, the third anode electrode 53 is disposed between the first holder 31 and the second holder 32, the first holder 31 is disposed at the fifth film forming position 85 described above, The 2nd holder 32 is arrange | positioned in the 6th film forming position 86 mentioned above. Thereafter, the door of the third film forming chamber 63 is closed and the inside of the third film forming chamber 63 is evacuated, and then the sixth cathode electrode 76 which is a shower head electrode is connected to the inside of the third film forming chamber 63. The sixth film formation position 86 is supplied with SiH ₄ gas and H ₂ gas as source gases and PH ₃ gas diluted with hydrogen as dopant addition gas. Since the addition amount of the dopant impurity is good in trace amounts, it may be used a mixed gas diluted beforehand with SiH ₄ and H _2.

  In the present embodiment, the second semiconductor substrate placed on the second holder 32 is heated using a heater built in the third anode electrode 53, and the sixth high-frequency power supply 96 is turned on. As a result, plasma discharge occurs between the sixth cathode electrode 76 and the third anode electrode 53. As a result of this plasma discharge, as shown in FIG. 8, an N-type semiconductor layer 4 as a second conductivity type semiconductor layer is formed on the back side of the second intrinsic semiconductor layer 5B.

As the N-type semiconductor layer 4, an N-type amorphous silicon layer or an N-type microcrystalline silicon layer is preferably used. When forming the N-type semiconductor layer 4, the energy of the silicon-based thin film is obtained by adding a gas containing a different element such as CH ₄ , CO ₂ , NH ₃ , GeH ₄ to alloy the silicon-based thin film. You can also change the gap. In addition, impurities such as oxygen and carbon may be added in a small amount in order to improve light transmittance. In that case, it can be formed by introducing a gas such as CO ₂ or CH ₄ during the CVD film formation.

  In addition, this 2nd conductivity type semiconductor layer film-forming step can be performed in the same period as the 3rd film-forming chamber passage step mentioned above. Specifically, the fifth high-frequency power source 95 connected to the fifth cathode electrode 75 is kept in the OFF state, and the first film placed on the first holder 31 is placed at the fifth film forming position 85. While not forming any film on the semiconductor substrate, the sixth high-frequency power source 96 connected to the sixth cathode electrode 76 is turned on, and the sixth cathode electrode 76, which is a showerhead electrode, Various gases are supplied, and the N-type semiconductor layer 4 can be formed on the back surface of the second intrinsic semiconductor layer 5B formed on the back surface side of the second semiconductor substrate at the sixth film forming position 86. It is.

[Transparent conductive layer forming step]
Thereafter, using another film forming apparatus or the like, the first transparent conductive layer 6A shown in FIG. 2 is formed on the surface side of the P-type semiconductor layer 3, and the second transparent conductive layer 6B is formed on the N-type semiconductor layer 4. It is formed on the back side.

  The method for forming the first transparent conductive layer 6A and the second transparent conductive layer 6B is not particularly limited, but a physical vapor deposition method such as a sputtering method or a reaction between an organometallic compound and oxygen or water is used. A chemical vapor deposition (MOCVD) method or the like is preferable. In any film forming method, energy by heat or plasma discharge can be used.

  As a constituent material of the first transparent conductive layer 6A and the second transparent conductive layer 6B, transparent conductive metal oxides such as indium oxide, zinc oxide, tin oxide, titanium oxide, and composite oxides thereof are used. Further, a transparent conductive material made of a nonmetal such as graphene may be used. Among the constituent materials described above, in terms of high conductivity and transparency, indium-based composite oxides mainly composed of indium oxide are used as the first transparent conductive layer 6A and the second transparent conductive layer 6B. preferable. In order to ensure reliability and higher conductivity, it is more preferable to add a dopant to indium oxide. Examples of the impurity used as the dopant include Sn, W, Ce, Zn, As, Al, Si, S, and Ti.

  As shown in FIG. 9, the film forming apparatus 300 </ b> A includes a fourth film forming chamber 65 connected to the third film forming chamber 63 at the rear stage of the third film forming chamber 63, and The film forming chamber 65 may include a seventh film forming position 87 and an eighth film forming position 88. The fourth film forming chamber 65 includes a seventh cathode electrode 77, an eighth cathode electrode 78, and a fourth anode electrode 54, and has the same configuration as the first film forming chamber 61 and the like described above. It shall have. In that case, the first transparent conductive layer 6A is formed on the front surface side of the P-type semiconductor layer 3 at the seventh film-forming position 87, and the back surface side of the N-type semiconductor layer 4 at the eighth film-forming position 88. Alternatively, the second transparent conductive layer 6B may be formed as a method.

  Specifically, as shown in FIG. 6, the semiconductor substrate 1 having the first intrinsic semiconductor layer 5 </ b> A and the P-type semiconductor layer 3 formed on the surface side is carried into the fourth film forming chamber 65, and this In the fourth film forming chamber 65, the first transparent conductive layer 6A is formed on the surface side of the P-type semiconductor layer 3. Thereafter, the semiconductor substrate 1 is carried again into the first film forming chamber 61 as the second semiconductor substrate through the above-described transfer step and reversal step. Thereafter, the second intrinsic semiconductor layer 5B and the N-type semiconductor layer 4 are formed on the back surface side of the semiconductor substrate 1, and then the semiconductor substrate 1 is again carried into the fourth film forming chamber 65, where the N-type semiconductor layer 4 A second transparent conductive layer 6B is formed on the back side.

[Collector collecting step]
Thereafter, the current collecting electrode 2 including the bus bar electrode 2A and the finger electrode 2B is formed on the front surface side of the first transparent conductive layer 6A and the back surface side of the second transparent conductive layer 6B. The collector electrode 2 includes a base electrode formed on the front surface side of the first transparent conductive layer 6A and the back surface side of the second transparent conductive layer 6B, and a plating electrode formed on the base electrode. .

  The base electrode can be formed by, for example, an inkjet method, a screen printing method, a spray method, a roll coating method, or the like. The base electrode can be patterned into a predetermined shape, and a screen printing method is suitable from the viewpoint of productivity when forming the patterned base electrode. In the screen printing method, a method of printing a printing paste containing conductive fine particles using a screen plate having an opening pattern corresponding to the pattern shape of the collecting electrode 2 is preferably used.

  As the conductive particles contained in the base electrode, for example, silver, copper, aluminum, nickel, tin, bismuth, zinc, gallium, carbon, and a mixture thereof can be used.

  As the thermosetting resin contained in the base electrode, an epoxy resin, a phenol resin, an acrylic resin, or the like can be used. By including the thermosetting resin in the base electrode, the base electrode can be cured in the thermosetting step.

  The base electrode may be composed of a plurality of layers. For example, when the base electrode includes a lower layer having a low contact resistance with respect to the first transparent conductive layer 6A and the second transparent conductive layer 6B, an improvement in the fill factor of the photoelectric conversion element 100 can be expected.

  The plating electrode is formed by depositing a metal starting from the base electrode by a plating method. As the metal to be deposited as the plating electrode, for example, copper, nickel, tin, aluminum, chromium, silver, or the like can be used, and any material that can be formed by a plating method may be used.

[Insulating film forming step]
Although not shown in FIG. 2, an insulating film is formed in a region where the collecting electrode 2 is not formed on the front surface of the first transparent conductive layer 6A and the back surface of the second transparent conductive layer 6B. It doesn't matter. In the plating method for forming the plating electrode described above by forming the insulating film, the surface of the first transparent conductive layer 6A and the back surface of the second transparent conductive layer 6B are chemically and electrically exposed from the plating solution. It is possible to protect. That is, it is possible to suppress the metal from being deposited on the surfaces of the first transparent conductive layer 6A and the second transparent conductive layer 6B.

  In this insulating film forming step, for example, the film forming apparatus 300 </ b> A shown in FIG. 9 further sets the fifth film forming chamber 66 connected to the fourth film forming chamber 65 at the rear stage of the fourth film forming chamber 65. In addition, the fifth film forming chamber 66 can be performed in a configuration including the ninth film forming position 89 and the tenth film forming position 90. The fifth film forming chamber 66 has a ninth cathode electrode 79, a tenth cathode electrode 80, and a fifth anode electrode 55, and has the same configuration as the first film forming chamber 61 and the like described above. It shall have. In this case, the first insulating film is formed on the surface side of the first transparent conductive layer 6A at the ninth film forming position 89, and the second transparent conductive layer 6B is formed at the tenth film forming position 90. A method of forming the second insulating film on the back surface side may be used.

  Specifically, the semiconductor substrate 1 on which the first intrinsic semiconductor layer 5A, the P-type semiconductor layer 3, and the first transparent conductive layer 6A are formed on the surface side is carried into the fifth film forming chamber 66, and this In the fifth film forming chamber 66, a first insulating film is formed on the surface side of the first transparent conductive layer 6A. Thereafter, the semiconductor substrate 1 is carried again into the first film forming chamber 61 as the second semiconductor substrate through the above-described transfer step and reversal step. Thereafter, the second intrinsic semiconductor layer 5B, the N-type semiconductor layer 4, and the second transparent conductive layer 6B are formed on the rear surface side of the semiconductor substrate 1, and then again in the fifth film forming chamber 66. The second insulating film is deposited on the back surface side of the second transparent conductive layer 6B.

  As a material constituting the insulating film, it is necessary to use an electrically insulating material, and it is desirable that the material has chemical stability against the plating solution. By using a material having high chemical stability with respect to the plating solution, the insulating film is difficult to dissolve when the above-described plating electrode is formed, and the surface of the first transparent conductive layer 6A and the second transparent conductive layer 6B The occurrence of damage to the back surface can be suppressed.

  Moreover, as a material which comprises an insulating film, it is preferable to use the material with large adhesive strength with 6 A of 1st transparent conductive layers and the 2nd transparent conductive layer 6B. By increasing the adhesion strength between the first transparent conductive layer 6A and the second transparent conductive layer 6B, the insulating film is difficult to peel off when the above-described plating electrode is formed, and the first transparent conductive layer 6A, It is possible to prevent metal from being deposited on the second transparent conductive layer 6B.

  For the insulating film, a material having high light transmittance is preferably used. If light absorption by the insulating film is small, more light can be taken into the semiconductor substrate 1 side. For example, when the insulating film has sufficient transparency with a transmittance of 90% or more, optical loss due to light absorption in the insulating film is small, and after the plating electrode is formed, a step of removing the insulating film is not necessary, It can be used as it is as a part of the photoelectric conversion element 100. Therefore, the manufacturing process of the photoelectric conversion element 100 can be simplified, and the productivity can be further improved. In addition, when the insulating film is used as it is as a part of the photoelectric conversion element 100 without providing the step of removing the insulating film, the insulating film is made of a material having sufficient weather resistance and stability against heat and humidity. It is more desirable to use.

  The material constituting the insulating film may be an inorganic insulating material or an organic insulating material. As the inorganic insulating material, for example, materials such as silicon oxide, silicon nitride, titanium oxide, aluminum oxide, and magnesium oxide can be used. As the organic insulating material, for example, materials such as polyester, ethylene vinyl acetate copolymer, acrylic, epoxy, and polyurethane can be used.

  Among these inorganic materials, from the viewpoint of plating solution resistance and transparency, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, sialon (SiAlON), yttrium oxide, magnesium oxide, barium titanate, samarium oxide, Barium tantalate, tantalum oxide, magnesium fluoride, titanium oxide, strontium titanate and the like are preferably used. Among these, from the viewpoint of electrical properties and adhesion to the transparent electrode layer, etc., silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, sialon (SiAlON), yttrium oxide, magnesium oxide, barium titanate, samarium oxide, Barium tantalate, tantalum oxide, magnesium fluoride, and the like are preferable, and silicon oxide, silicon nitride, and the like are particularly preferably used from the viewpoint that the refractive index can be appropriately adjusted. These inorganic materials are not limited to those having a stoichiometric composition, and may include oxygen deficiency or the like.

  When an inorganic insulating material such as silicon oxide or silicon nitride is used as a constituent material of the insulating film, a dry method such as a plasma CVD method or a sputtering method is preferably used as a method for forming the insulating film. In the case where an organic insulating material is used as a constituent material of the insulating film, a wet method such as a spin coating method or a screen printing method is preferably used as a method for forming the insulating film. According to these methods, it is possible to form a dense film with few defects such as pinholes.

  In the present embodiment, the insulating film is formed by a plasma CVD method from the viewpoint of forming a denser film. According to this method, not only a thick film having a thickness of about 200 nm but also a thin film having a thickness of about 30 to 100 nm can be formed.

[Other Embodiments]
Although the film forming apparatus 300 described with reference to FIG. 4 and the film forming apparatus 300A described with reference to FIG. 9 include the transfer means 64, the example in which the transfer step and the reversal step described above are performed is shown. Is not limited to this example. For example, when the film forming apparatuses 300 and 300A are not provided with the conveying means 64, the first intrinsic semiconductor layer forming step, the first conductive type semiconductor layer forming step, and the third film forming chamber passing step are performed. The second semiconductor substrate is stored, the second semiconductor substrate and the first semiconductor substrate to be newly formed are carried into the first film forming chamber 61, and the first intrinsic semiconductor layer described above is stored. The film forming step and the second intrinsic semiconductor layer forming step may be performed in the same period.

  Note that the first film formation chamber 61 and the like described above with reference to FIGS. 4 and 9 include the first cathode electrode 71 and the second cathode electrode 72 connected to the high-frequency power source, and the first grounded state. The first cathode electrode 71 and the second cathode electrode 72 are disposed at both ends of the first film forming chamber 61, and the first cathode electrode 71 and the second cathode electrode 72 are connected to each other. Although the example in which the first anode electrode 51 is disposed between the two is shown, the present disclosure is not limited to this example. For example, in the example shown in FIG. 10, the film forming chamber 67 has an anode electrode 56 disposed on one end side of the film forming chamber 67 and the other end side of the film forming chamber 67 so as to face the anode electrode 56. In addition, the first cathode electrode 71A and the second cathode electrode 72A may be provided so as to be divided into areas. Also in this case, the first film forming position 81A is between the first cathode electrode 71A and the anode electrode 56, and the second film forming position 82A is between the second cathode electrode 72A and the anode electrode 56. . However, when the film forming conditions at the first film forming position 81A and the second film forming position 82A are different, the two cathode electrodes are formed as in the example described above with reference to FIGS. It is desirable that the two film forming positions are disposed at both ends of the film chamber and are blocked by the anode electrode.

  In the present embodiment, the first intrinsic semiconductor layer forming step for forming the first intrinsic semiconductor layer 5A on the surface side of the semiconductor substrate 1 and the first conductivity type on the surface side of the first intrinsic semiconductor layer 5A. After passing through the first conductive type semiconductor layer forming step for forming the P-type semiconductor layer 3 as the semiconductor layer, the third forming chamber passing step, and the transfer / reversing step, the second side is formed on the back surface side of the semiconductor substrate 1. A second intrinsic semiconductor layer deposition step for forming intrinsic semiconductor layer 5B, a second deposition chamber passing step, and an N-type semiconductor layer as a second conductivity type semiconductor layer on the back side of second intrinsic semiconductor layer 5B Although the example which performs the 2nd conductivity type semiconductor layer film forming step which forms 4 was shown, this indication is not limited to such a method. Examples thereof will be described below with reference to FIGS. 4 and 9.

[Step of disposing the first semiconductor substrate at the second deposition position of the first deposition chamber]
First, the semiconductor substrate 1 on which the desired thin film is not formed on the front and back surfaces is placed on the substrate placement surface of the first holder 31 so that the front side is exposed. Then, the entire substrate holder 200 is carried into the first film forming chamber 61 shown in FIGS. 4 and 9, and the semiconductor substrate 1 is disposed at the first film forming position 81.

[First intrinsic semiconductor layer deposition step]
Next, a first intrinsic semiconductor layer deposition step for depositing the first intrinsic semiconductor layer 5A on the surface side of the semiconductor substrate 1 is performed. Specifically, after the inside of the first film forming chamber 61 is evacuated, a silicon-containing gas or the like serving as a source gas is supplied from a first cathode electrode 71 that is a showerhead electrode, and the first high-frequency power source When 91 is turned on, plasma discharge is generated at the first film forming position 81. By the occurrence of this plasma discharge, the source gas is ionized, and the first intrinsic semiconductor layer 5A is formed on the back surface of the semiconductor substrate 1 which is the first semiconductor substrate.

[Second film forming chamber passing step]
Thereafter, the substrate holder 200 is carried into the second film forming chamber 62. At the third film forming position 83 in the second film forming chamber 62, no film is formed on the back side of the semiconductor substrate 1. Then, the semiconductor substrate 1 is passed.

[First Conductive Type Semiconductor Layer Film Formation Step]
Next, the substrate holder 200 is carried into the third deposition chamber 63, and a first conductivity type semiconductor layer deposition step for depositing the first conductivity type semiconductor layer on the surface side of the first intrinsic semiconductor layer 5A is performed. Do. In the present embodiment, the first conductive type semiconductor layer is formed in the third film forming chamber 63. Specifically, after the semiconductor substrate 1 is disposed at the fifth film forming position 85 and the inside of the third film forming chamber 63 is evacuated, the source gas is supplied from the fifth cathode electrode 75 which is a shower head electrode. By supplying the silicon-containing gas, the dopant addition gas, and the like to turn on the fifth high-frequency power supply 95, plasma discharge is generated at the fifth film forming position 85. Due to the occurrence of this plasma discharge, the source gas and the dopant-added gas are ionized to form the P-type semiconductor layer 3 as the first conductivity type semiconductor layer on the surface side of the first intrinsic semiconductor layer 5A.

[Transfer / Reverse Step]
When the substrate holder 200 passes through the third film forming chamber 63, a transfer step of transferring the substrate holder 200 into the first film forming chamber 61 again by the transfer means 64 described above is performed.

  Here, the first intrinsic semiconductor layer 5 </ b> A and the P-type semiconductor layer 3 are formed on the surface side of the semiconductor substrate 1 that has passed through the third film forming chamber 63.

  In this embodiment, the semiconductor substrate 1 in which a desired thin film is formed on the surface side is referred to as a “second semiconductor substrate”.

  Then, the semiconductor substrate 1 placed on the first holder 31 so that the front side is exposed is turned over so that the back side is exposed and placed on the substrate placing surface of the second holder 32. Do step.

  Further, in this embodiment, the second semiconductor substrate is moved to the second holder 32 and is free on the substrate placement surface of the first holder 31 on both the front side and the back side. A new first semiconductor substrate on which no thin film is formed is placed so that the surface side is exposed.

  Note that either the transporting step or the reversing step may be performed first. Moreover, it does not matter as a method of performing the reversing step in the middle of the conveying step.

[Step of Disposing Second Semiconductor Substrate at Second Film Forming Position of First Film Forming Chamber]
When the second semiconductor substrate is placed on the substrate placement surface of the second holder 32 and the first semiconductor substrate is placed on the substrate placement surface of the first holder 31, the substrate holder 200 is moved again to the first place. Into the film forming chamber 61. In the first film forming chamber 61, the first holder 31 and the second holder 32 are electrically connected to the first anode electrode 51, and the first holder 31 is located at the first film forming position 81 described above. The second holder 32 is disposed at the second film forming position 82 described above.

[Second intrinsic semiconductor layer deposition step]
When the first semiconductor substrate is disposed at the first film deposition position 81 and the second semiconductor substrate is disposed at the second film deposition position 82, the door of the first film deposition chamber 61 is closed, and the first The film forming chamber 61 is evacuated. Thereafter, a silicon-containing gas or the like serving as a source gas is supplied from the first cathode electrode 71 and the second cathode electrode 72 that are showerhead electrodes.

By turning on the first high frequency power supply 91 connected to the first cathode electrode 71, plasma discharge is generated between the first cathode electrode 71 and the first anode electrode 51. Further, by turning on the second high-frequency power source 92 connected to the second cathode electrode 72, plasma discharge is generated between the second cathode electrode 72 and the first anode electrode 51. Due to the occurrence of this plasma discharge, the source gas SiH ₄ gas and H ₂ gas are ionized, and the first intrinsicity is formed on the surface of the semiconductor substrate 1 which is the first semiconductor substrate placed on the first holder 31. An intrinsic amorphous silicon layer as the semiconductor layer 5A is formed, and an intrinsic non-layer as the second intrinsic semiconductor layer 5B is formed on the back surface of the semiconductor substrate 1 which is the second semiconductor substrate placed on the second holder 32. A crystalline silicon layer is formed.

  The first intrinsic semiconductor layer deposition step and the second intrinsic semiconductor layer deposition step described above are performed within the same period.

  By such a method, a film forming chamber for forming a desired thin film (an intrinsic semiconductor layer in the present embodiment) on the back surface side of the semiconductor substrate 1 and a common film with the desired thin film on the surface side of the semiconductor substrate 1 are used. Since it is not necessary to separately provide a film forming chamber for forming a thin film formed using a source gas, it is possible to reduce the size of an in-line manufacturing apparatus.

  In addition, since the second intrinsic semiconductor layer deposition step and the first intrinsic semiconductor layer deposition step described above can be performed in the same period, an in-line manufacturing process with high productivity can be realized. it can.

[Second conductivity type semiconductor layer deposition step]
When the second intrinsic semiconductor layer 5 </ b> B is formed on the back surface of the second semiconductor substrate, the substrate holder 200 is moved into the second film forming chamber 62. In the present embodiment, the second conductivity type semiconductor layer is deposited in the second deposition chamber 62. In the second film forming chamber 62, the first holder 31 and the second holder 32 are electrically connected to the second anode electrode 52, and the first holder 31 is arranged at the third film forming position 83 described above. Then, the second holder 32 is disposed at the fourth film forming position 84 described above. Thereafter, the door of the second film forming chamber 62 is closed, and the inside of the second film forming chamber 62 is evacuated, and then the fourth cathode electrode 74, which is a shower head electrode, enters the second film forming chamber 62. The fourth film formation position 84 is supplied with SiH ₄ gas and H ₂ gas as source gases and PH ₃ gas diluted with hydrogen as dopant addition gas. Since the addition amount of the dopant impurity is good in trace amounts, it may be used a mixed gas diluted beforehand with SiH ₄ and H _2.

  In the present embodiment, the second semiconductor substrate placed on the second holder 32 is heated using the heater built in the second anode electrode 52, and the fourth high-frequency power supply 94 is turned on. As a result, a plasma discharge is generated between the fourth cathode electrode 74 and the second anode electrode 52. Due to the occurrence of this plasma discharge, the N-type semiconductor layer 4 as the second conductivity type semiconductor layer is formed on the back surface side of the second intrinsic semiconductor layer 5B.

  In addition, this 2nd conductivity type semiconductor layer film-forming step can be performed in the same period as the 2nd film-forming chamber passage step mentioned above. Specifically, the third high-frequency power source 93 connected to the third cathode electrode 73 is kept off, and the first film placed on the first holder 31 is placed at the third film-forming position 83. While not forming any film on the semiconductor substrate, the fourth high-frequency power source 94 connected to the fourth cathode electrode 74 is turned on, and the fourth cathode electrode 74, which is a shower head electrode, Various gases are supplied, and the N-type semiconductor layer 4 can be formed on the back surface of the second intrinsic semiconductor layer 5B formed on the back surface side of the second semiconductor substrate at the fourth deposition position 84. It is.

[Third film forming chamber passage step]
When the N-type semiconductor layer 4 is deposited on the back side of the second intrinsic semiconductor layer 5B, the door of the second deposition chamber 62 is opened and the substrate holder 200 is moved into the third deposition chamber 63. . In the third film forming chamber 63, the first holder 31 and the second holder 32 are electrically connected to the third anode electrode 53, and the first holder 31 is placed at the fifth film forming position 85 described above. The second holder 32 is disposed at the sixth film forming position 86 described above.

  In the present embodiment, the third film forming chamber 63 is a film forming chamber for forming the P-type semiconductor layer 3, and the P-type semiconductor layer 3 is not formed on the back side of the N-type semiconductor layer 4. The semiconductor substrate 1 placed on the second holder 32 disposed at the film forming position 86 is allowed to pass through the third film forming chamber 63 without performing any film formation. That is, in the third deposition chamber passing step, the sixth high-frequency power source 96 connected to the sixth cathode electrode 76 is turned off, and the semiconductor substrate 1 placed on the second holder 32 is manufactured. The film is not formed. At that time, no gas may be supplied from the sixth cathode electrode 76 which is a shower head electrode. When the fifth cathode electrode 75 and the sixth cathode electrode 76 are connected to a common gas cylinder, only the gas supply to the sixth cathode electrode 76 side is stopped using an electromagnetic valve. Also good.

  In addition, this 3rd film forming chamber passage step can be performed in the same period as the first conductive type semiconductor layer film forming step described above. That is, the sixth high-frequency power source 96 connected to the sixth cathode electrode 76 is kept in an OFF state, and at the sixth film forming position 86, the second semiconductor substrate placed on the second holder 32 is placed on the second semiconductor substrate. On the other hand, while not forming any film, the fifth high-frequency power source 95 connected to the fifth cathode electrode 75 is turned on, and various gases are supplied from the fifth cathode electrode 75 which is a shower head electrode. At the fifth film forming position 85, the P-type semiconductor layer 3 can be formed on the surface of the first intrinsic semiconductor layer 5A formed on the surface side of the first semiconductor substrate.

  In addition, after this 3rd film forming chamber passage step, you may perform the transparent conductive layer film forming step and current collection electrode formation step which were mentioned above using FIG.

  In this embodiment, the first conductive semiconductor is described as an example of a P-type semiconductor and the second conductive semiconductor is an N-type semiconductor. However, the first conductive semiconductor is an N-type semiconductor, and the second conductive semiconductor is a second type. The conductive semiconductor may be a P-type semiconductor.

  In addition, it is good also as a manufacturing method which reversed all the surface sides and the back surface sides of the semiconductor substrate 1 in the manufacturing method mentioned above in this embodiment. That is, for example, in the first film forming chamber 61, the second film forming chamber 62, and the third film forming chamber 63, the non-light-receiving surface side (back surface side) of the first semiconductor substrate is formed, and the second It is good also as the manufacturing method which forms into a film the light-receiving surface side (surface side) of this semiconductor substrate.

  In this embodiment, an example in which various gases are supplied from the cathode electrode side in each film forming chamber has been described. However, the anode electrode is a shower head electrode, and various gases are supplied from the anode electrode side into the film forming chamber. It is good also as a manufacturing method to supply.

  In the example shown in FIGS. 4 and 9 of the present embodiment, two cathode electrodes connected to a high-frequency power source are arranged at both ends of each film forming chamber, and an anode electrode is interposed between the two cathode electrodes. Although the example of arranging is shown, two anode electrodes may be arranged at both ends of each film forming chamber, and the cathode electrode may be arranged between the anode electrodes. In this case, the cathode electrode arranged in the center is connected to the high frequency power source, and plasma discharge may occur between one anode electrode and the cathode electrode and between the other anode electrode and the cathode electrode. it can.

  In the configuration example of the substrate holder 200 shown in FIG. 3 of the present embodiment, an example is shown in which the substrate placement surface of the first holder 31 and the substrate placement surface of the second holder 32 face in opposite directions. However, the substrate placement surface of the first holder 31 and the substrate placement surface of the second holder 32 may be arranged so as to face each other. In that case, the distance between the first holder 31 and the second holder 32 in the substrate holder 200 is separated, and when the substrate holder 200 is carried into each film forming chamber, the first holder 31 and the second holder 32 What is necessary is just to set it as the structure by which the electrode arrange | positioned between and the board | substrate mounting surface of the 1st holder 31 and the 2nd holder 32 are arrange | positioned with a certain amount of space | intervals.

  Further, in the substrate holder 200, when the substrate placement surface of the first holder 31 and the substrate placement surface of the second holder 32 are disposed to face each other, the substrate disposed inside the substrate holder 200. A plurality of holes may be provided in a region of the first holder 31 and the second holder 32 where the semiconductor substrate 1 is not placed so that the gas can easily flow around the placement surface.

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate, 2 Current collection electrode, 2A Bus-bar electrode, 2B finger electrode, 3 P-type semiconductor layer, 4 N-type semiconductor layer, 5A 1st intrinsic semiconductor layer, 5B 2nd intrinsic semiconductor layer, 6A 1st transparent Conductive layer, 6B 2nd transparent conductive layer, 8 photoelectric conversion part, 31 1st holder, 32 2nd holder, 33 holding part, 51 1st anode electrode, 52 2nd anode electrode, 53 3rd anode electrode , 54 4th anode electrode, 55 5th anode electrode, 56 anode electrode, 61 1st film-forming chamber, 62 2nd film-forming chamber, 63 3rd film-forming chamber, 64 transport means, 65 4th Film forming chamber, 66 fifth film forming chamber, 67 film forming chamber, 71 first cathode electrode, 71A first cathode electrode, 72 second cathode electrode, 72A second cathode electrode, 73 third film forming chamber Cathode electrode, 74 Fourth cathode electrode , 75 5th cathode electrode, 76 6th cathode electrode, 77 7th cathode electrode, 78 8th cathode electrode, 79 9th cathode electrode, 80 10th cathode electrode, 81 1st film forming position , 81A first film forming position, 82 second film forming position, 82A second film forming position, 83 third film forming position, 84 fourth film forming position, 85 fifth film forming position, 86 6th deposition position, 87 7th deposition position, 88 8th deposition position, 89 9th deposition position, 90 10th deposition position, 91 1st high frequency power supply, 92 2nd deposition position High-frequency power source, 93 Third high-frequency power source, 94 Fourth high-frequency power source, 95 Fifth high-frequency power source, 96 Sixth high-frequency power source, 100 Photoelectric conversion element, 200 Substrate holder, 300 Film-forming apparatus, 300A Film-forming apparatus.

Claims (21)

A method for producing a photoelectric conversion element, comprising:
The photoelectric conversion element has a first main surface and a second main surface, and includes at least a first thin film, a semiconductor substrate, and a second thin film in this order,
The manufacturing method includes a first arranging step, a second arranging step, and a first film forming step,
In the first disposing step, the first semiconductor substrate on which the first thin film and the second thin film are not formed is disposed at a first film forming position in the first film forming chamber,
In the second arrangement step, at least the first thin film is formed on the first main surface side, and the second semiconductor is not formed on the second main surface side. A substrate is disposed at a second deposition position in the first deposition chamber;
In the first film forming step, in the first film forming chamber, the step of forming the first thin film on the first main surface side of the first semiconductor substrate; and the second thin film Performing the step of forming the second semiconductor substrate on the second main surface side within the same period,
A method for producing a photoelectric conversion element. The first thin film and the second thin film have a common composition,
The manufacturing method of the photoelectric conversion element of Claim 1. The first thin film and the second thin film are formed using a common source gas.
The manufacturing method of the photoelectric conversion element of Claim 1 or 2. In the first film forming step, the film forming condition of the first thin film at the first film forming position is different from the film forming condition of the second thin film at the second film forming position. ,
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 3. The manufacturing method further includes a reversing step and a conveying step,
In the inversion step, the first main surface side and the second main surface side of the first semiconductor substrate that has undergone the first film forming step are inverted,
In the transfer step, the first semiconductor substrate that has passed through the first film forming step is transferred into the first film forming chamber as the second semiconductor substrate.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 4. The first thin film and the second thin film formed in the first film forming step are intrinsic semiconductor layers.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 5. The first film forming chamber includes a first cathode electrode, a second cathode electrode, a first anode electrode disposed between the first cathode electrode and the second cathode electrode; With
In the first arrangement step, the first semiconductor substrate is arranged at the first film forming position so that the first main surface side of the first semiconductor substrate faces the first cathode electrode side. And
In the second arrangement step, the second semiconductor substrate is arranged at the second film formation position so that the second main surface side of the second semiconductor substrate faces the second cathode electrode side. And
In the first film forming step, plasma discharge is generated at the first film forming position and the second film forming position.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 6. The first placement step and the second placement step are performed substantially simultaneously,
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 7. The manufacturing method further includes a third arranging step, a fourth arranging step, and a second film forming step,
In the third arrangement step, in the second film forming chamber connected in series to the first film forming chamber, the first semiconductor substrate is placed in the third film forming chamber in the second film forming chamber. Placed in position,
In the fourth disposing step, in the second film forming chamber, the second semiconductor substrate is disposed at a fourth film forming position in the second film forming chamber,
In the second film forming step, in the second film forming chamber, a first conductive semiconductor layer is formed on the second main surface side of the second thin film in the second semiconductor substrate. The first conductive semiconductor layer is formed on the first main surface side of the first thin film in the first semiconductor substrate.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 8. The second film forming chamber includes a third cathode electrode, a fourth cathode electrode, a second anode electrode disposed between the third cathode electrode and the fourth cathode electrode; With
In the third arrangement step, the first semiconductor substrate is arranged at the third film forming position so that the first main surface side of the first semiconductor substrate faces the third cathode electrode side. And
In the fourth arrangement step, the second semiconductor substrate is arranged at the fourth film forming position so that the second main surface side of the second semiconductor substrate faces the fourth cathode electrode side. And
In the second film forming step, plasma discharge is generated at the third film forming position.
The manufacturing method of the photoelectric conversion element of Claim 9. In the second film forming step, the source gas used for forming the first conductivity type semiconductor layer is not supplied at the fourth film forming position.
The manufacturing method of the photoelectric conversion element of Claim 10. The third placement step and the fourth placement step are performed substantially simultaneously.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 9 thru | or 11. The manufacturing method further includes a fifth arrangement step, a sixth arrangement step, and a third film forming step,
In the fifth arrangement step, in the third film forming chamber connected in series to the second film forming chamber, the first semiconductor substrate is placed in the fifth film forming chamber in the third film forming chamber. Placed in position,
In the sixth arrangement step, in the third film formation chamber, the second semiconductor substrate is arranged at a sixth film formation position in the third film formation chamber,
In the third film forming step, a second conductive type semiconductor layer is formed on the first main surface side of the first conductive type semiconductor layer in the first semiconductor substrate in the third film forming chamber. Without forming the second conductive semiconductor layer on the second main surface side of the second thin film in the second semiconductor substrate;
The manufacturing method of the photoelectric conversion element as described in any one of Claims 9 thru | or 12. The third deposition chamber comprises a fifth cathode electrode, a sixth cathode electrode, a third anode electrode disposed between the fifth cathode electrode and the sixth cathode electrode; With
In the fifth arrangement step, the first semiconductor substrate is arranged at the fifth film forming position so that the first main surface side of the first semiconductor substrate faces the fifth cathode electrode side. And
In the sixth arrangement step, the second semiconductor substrate is arranged at the sixth film formation position so that the second main surface side of the second semiconductor substrate faces the sixth cathode electrode side. And
In the third film forming step, plasma discharge is generated at the sixth film forming position.
The manufacturing method of the photoelectric conversion element of Claim 13. In the third film forming step, the source gas used for forming the second conductivity type semiconductor layer is not supplied at the fifth film forming position.
The manufacturing method of the photoelectric conversion element of Claim 14. The fifth placement step and the sixth placement step are performed substantially simultaneously.
The manufacturing method of the photoelectric conversion element as described in any one of Claim 13 thru | or 15. The manufacturing method further includes a third arranging step, a fourth arranging step, and a second film forming step,
In the third arrangement step, in the second film forming chamber connected in series to the first film forming chamber, the first semiconductor substrate is placed in the third film forming chamber in the second film forming chamber. Placed in position,
In the fourth disposing step, in the second film forming chamber, the second semiconductor substrate is disposed at a fourth film forming position in the second film forming chamber,
In the second film forming step, in the second film forming chamber, a second conductive type semiconductor layer is formed on the first main surface side of the first thin film in the first semiconductor substrate. The second conductive semiconductor layer is formed on the second main surface side of the second thin film in the second semiconductor substrate.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 8. The manufacturing method further includes a fifth arrangement step, a sixth arrangement step, and a third film forming step,
In the fifth arrangement step, in the third film forming chamber connected in series to the second film forming chamber, the first semiconductor substrate is placed in the fifth film forming chamber in the third film forming chamber. Placed in position,
In the sixth arrangement step, in the third film formation chamber, the second semiconductor substrate is arranged at a sixth film formation position in the third film formation chamber,
In the third film forming step, a first conductive type semiconductor layer is formed on the second main surface side of the second conductive type semiconductor layer in the second semiconductor substrate in the third film forming chamber. Without forming the first conductive semiconductor layer on the first main surface side of the first thin film in the first semiconductor substrate;
The manufacturing method of the photoelectric conversion element of Claim 17. The manufacturing method further includes a fourth film forming step,
In the fourth film forming step, in the fourth film forming chamber connected in series to the third film forming chamber, the first main type of the first conductive type semiconductor layer in the first semiconductor substrate is formed. Forming a first transparent conductive layer on the surface side, and forming a second transparent conductive layer on the second main surface side of the second conductivity type semiconductor layer in the second semiconductor substrate;
The manufacturing method of the photoelectric conversion element as described in any one of Claims 13 thru | or 16,18. The manufacturing method further includes a fifth film forming step,
In the fifth film forming step, in the fifth film forming chamber connected in series to the fourth film forming chamber, the first main conductive layer of the first transparent conductive layer in the first semiconductor substrate is formed. Forming a first insulating film on the surface side, and forming a second insulating film on the second main surface side of the second transparent conductive layer in the second semiconductor substrate;
The manufacturing method of the photoelectric conversion element of Claim 19. The second semiconductor substrate is the first semiconductor substrate on which the first thin film is formed in the first film forming step.
The manufacturing method of the photoelectric conversion element as described in any one of Claims 1 thru | or 20.

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