JP2019029458A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2019029458A JP2019029458A JP2017145821A JP2017145821A JP2019029458A JP 2019029458 A JP2019029458 A JP 2019029458A JP 2017145821 A JP2017145821 A JP 2017145821A JP 2017145821 A JP2017145821 A JP 2017145821A JP 2019029458 A JP2019029458 A JP 2019029458A
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- metal layer
- layer
- semiconductor device
- insulating film
- interlayer insulating
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Abstract
Description
12:半導体基板
14:層間絶縁膜
14a:表面部分
16:ポリシリコン層
18:金属層
22:レジスト層
24:ポリイミド層
26:レジスト液
Claims (1)
- 半導体装置の製造方法であって、
頂面とその頂面から連続する側面を含む表面部分を有する層間絶縁膜上に金属層を形成する金属層形成工程であって、前記金属層は前記層間絶縁膜の前記表面部分を被覆するように形成される、金属層形成工程と、
前記金属層を被覆するポリイミド層を形成するポリイミド層形成工程と、
前記ポリイミド層上にレジスト液を塗布するレジスト液塗布工程と、を備え、
前記金属層は、前記層間絶縁膜の前記表面部分の前記側面に対向する面が傾斜している、半導体装置の製造方法。
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JP2019029458A true JP2019029458A (ja) | 2019-02-21 |
JP7017035B2 JP7017035B2 (ja) | 2022-02-08 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335658A (ja) * | 2006-06-15 | 2007-12-27 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2008021849A (ja) * | 2006-07-13 | 2008-01-31 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2017118060A (ja) * | 2015-12-25 | 2017-06-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
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- 2017-07-27 JP JP2017145821A patent/JP7017035B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007335658A (ja) * | 2006-06-15 | 2007-12-27 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2008021849A (ja) * | 2006-07-13 | 2008-01-31 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2017118060A (ja) * | 2015-12-25 | 2017-06-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
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