JP2019029399A5 - - Google Patents

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JP2019029399A5
JP2019029399A5 JP2017144536A JP2017144536A JP2019029399A5 JP 2019029399 A5 JP2019029399 A5 JP 2019029399A5 JP 2017144536 A JP2017144536 A JP 2017144536A JP 2017144536 A JP2017144536 A JP 2017144536A JP 2019029399 A5 JP2019029399 A5 JP 2019029399A5
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Japan
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region
impurity region
imaging device
impurity
pixel
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JP2017144536A
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JP2019029399A (en
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Priority to JP2017144536A priority Critical patent/JP2019029399A/en
Priority claimed from JP2017144536A external-priority patent/JP2019029399A/en
Publication of JP2019029399A publication Critical patent/JP2019029399A/en
Publication of JP2019029399A5 publication Critical patent/JP2019029399A5/ja
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Claims (13)

それぞれが、光電変換部および前記光電変換部で生成された電荷を蓄積する電荷蓄積領域を有する複数の画素を含む画素領域と、 A pixel region including a plurality of pixels, each of which has a photoelectric conversion unit and a charge storage region for accumulating charges generated by the photoelectric conversion unit.
前記画素領域の外側に位置する周辺回路領域と、 Peripheral circuit area located outside the pixel area and
前記画素領域と前記周辺回路領域との間に位置する第1導電型の第1不純物領域と、前記第1不純物領域に接続された複数の第1コンタクトプラグと、前記周辺回路領域と前記第1不純物領域との間に位置する第2導電型の第2不純物領域と、前記第2不純物領域に接続された複数の第2コンタクトプラグと、を有する周辺領域と、 A first conductive type first impurity region located between the pixel region and the peripheral circuit region, a plurality of first contact plugs connected to the first impurity region, the peripheral circuit region and the first. A peripheral region having a second conductive type second impurity region located between the impurity region and a plurality of second contact plugs connected to the second impurity region.
を備える撮像装置。 An imaging device comprising.
前記第1不純物領域は、平面視において前記画素領域を取り囲んでいる、 The first impurity region surrounds the pixel region in a plan view.
請求項1に記載の撮像装置。 The imaging device according to claim 1.
前記第2不純物領域は、平面視において前記画素領域を取り囲んでいる、 The second impurity region surrounds the pixel region in a plan view.
請求項1に記載の撮像装置。 The imaging device according to claim 1.
前記周辺領域は、 The peripheral area
前記周辺回路領域と前記第2不純物領域との間に位置する第1導電型の第3不純物領域と、 A first conductive type third impurity region located between the peripheral circuit region and the second impurity region,
前記第3不純物領域に接続された複数の第3コンタクトプラグと、を含む、 Includes a plurality of third contact plugs connected to the third impurity region.
請求項1から請求項3のいずれか一項に記載の撮像装置。 The imaging device according to any one of claims 1 to 3.
前記第3不純物領域は、平面視において前記画素領域を取り囲んでいる、 The third impurity region surrounds the pixel region in a plan view.
請求項4に記載の撮像装置。 The imaging device according to claim 4.
前記第1不純物領域よりも深い位置にあり、前記画素領域と前記周辺領域とにまたがる第2導電型の第4不純物領域をさらに有し、 It is located deeper than the first impurity region, and further has a second conductive type fourth impurity region that straddles the pixel region and the peripheral region.
前記第2不純物領域は、前記第4不純物領域に電気的に接続されている、 The second impurity region is electrically connected to the fourth impurity region.
請求項1から請求項5のいずれか一項に記載の撮像装置。 The imaging device according to any one of claims 1 to 5.
前記第4不純物領域よりも深い位置にあり、前記画素領域と前記周辺領域とにまたがる第1導電型の第5不純物領域をさらに有し、 It is located deeper than the fourth impurity region, and further has a first conductive type fifth impurity region that straddles the pixel region and the peripheral region.
前記第3不純物領域は、前記第5不純物領域に電気的に接続されている、 The third impurity region is electrically connected to the fifth impurity region.
請求項4または請求項5を引用する請求項6に記載の撮像装置。 The imaging apparatus according to claim 6, which cites claim 4 or 5.
前記第4不純物領域を貫通し、前記第5不純物領域と前記画素領域を電気的に接続する第1導電型の複数の第6不純物領域をさらに有する、 It further has a plurality of first conductive type sixth impurity regions that penetrate the fourth impurity region and electrically connect the fifth impurity region and the pixel region.
請求項7に記載の撮像装置。 The imaging device according to claim 7.
前記周辺領域は、平面視において前記画素領域と前記複数の第1コンタクトプラグとの間に位置する素子分離を含む、 The peripheral region includes an element separation located between the pixel region and the plurality of first contact plugs in a plan view.
請求項1から請求項8のいずれか一項に記載の撮像装置。 The imaging device according to any one of claims 1 to 8.
前記第1導電型は、P型である、 The first conductive type is a P type.
請求項1から請求項9のいずれか一項に記載の撮像装置。 The imaging device according to any one of claims 1 to 9.
前記周辺領域に電圧を供給する金属配線をさらに備え、 Further provided with metal wiring for supplying voltage to the peripheral region,
前記金属配線は前記周辺回路領域の上部の配線層内に位置する、 The metal wiring is located in the wiring layer above the peripheral circuit region.
請求項1から請求項10のいずれか一項に記載の撮像装置。 The imaging device according to any one of claims 1 to 10.
前記金属配線は前記配線層内のもっとも上の層に位置する、 The metal wiring is located in the uppermost layer in the wiring layer.
請求項11に記載の撮像装置。 The imaging device according to claim 11.
前記第3不純物領域は周囲よりも不純物濃度の高い第7不純物領域を内部に含む、 The third impurity region contains a seventh impurity region having a higher impurity concentration than the surroundings.
請求項4に記載の撮像装置。 The imaging device according to claim 4.
JP2017144536A 2017-07-26 2017-07-26 Imaging apparatus Pending JP2019029399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017144536A JP2019029399A (en) 2017-07-26 2017-07-26 Imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017144536A JP2019029399A (en) 2017-07-26 2017-07-26 Imaging apparatus

Publications (2)

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JP2019029399A JP2019029399A (en) 2019-02-21
JP2019029399A5 true JP2019029399A5 (en) 2020-09-03

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021044542A (en) 2019-09-05 2021-03-18 パナソニックIpマネジメント株式会社 Imaging apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3236588B2 (en) * 1999-10-01 2001-12-10 ローム株式会社 Semiconductor device
JP2008098255A (en) * 2006-10-07 2008-04-24 Nikon Corp Solid-state photographing device
US7821046B2 (en) * 2007-04-27 2010-10-26 Aptina Imaging Corporation Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels
JP2012004255A (en) * 2010-06-15 2012-01-05 Panasonic Corp Semiconductor device
WO2012176454A1 (en) * 2011-06-22 2012-12-27 パナソニック株式会社 Solid-state imaging device
JP5849670B2 (en) * 2011-12-09 2016-02-03 セイコーエプソン株式会社 Semiconductor device
JP2014086465A (en) * 2012-10-19 2014-05-12 Toshiba Corp Solid-state imaging device

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