JP2013219082A5 - - Google Patents

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Publication number
JP2013219082A5
JP2013219082A5 JP2012085666A JP2012085666A JP2013219082A5 JP 2013219082 A5 JP2013219082 A5 JP 2013219082A5 JP 2012085666 A JP2012085666 A JP 2012085666A JP 2012085666 A JP2012085666 A JP 2012085666A JP 2013219082 A5 JP2013219082 A5 JP 2013219082A5
Authority
JP
Japan
Prior art keywords
wiring
solid
imaging device
state imaging
pixel portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012085666A
Other languages
Japanese (ja)
Other versions
JP5994344B2 (en
JP2013219082A (en
Filing date
Publication date
Priority claimed from JP2012085666A external-priority patent/JP5994344B2/en
Priority to JP2012085666A priority Critical patent/JP5994344B2/en
Application filed filed Critical
Priority to CN201611254577.0A priority patent/CN106847848B/en
Priority to CN201310104772.5A priority patent/CN103367377B/en
Priority to US13/852,575 priority patent/US9184208B2/en
Priority to CN201611254173.1A priority patent/CN106935604B/en
Publication of JP2013219082A publication Critical patent/JP2013219082A/en
Publication of JP2013219082A5 publication Critical patent/JP2013219082A5/ja
Priority to US14/830,405 priority patent/US9356057B2/en
Priority to US15/050,165 priority patent/US9419042B2/en
Priority to US15/193,876 priority patent/US9530815B2/en
Publication of JP5994344B2 publication Critical patent/JP5994344B2/en
Application granted granted Critical
Priority to US15/348,564 priority patent/US9929193B2/en
Priority to US15/889,699 priority patent/US10084002B2/en
Priority to US16/115,169 priority patent/US10490581B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (5)

半導体基体と、
前記半導体基体に形成され、光電変換が行われるフォトダイオードと、
前記フォトダイオードから構成される画素が配置された画素部と、
前記画素部の前記半導体基体に、コンタクト部により電気的に接続されており、第1の方向に前記画素部外まで延びて形成された、第1の配線と、
前記第1の配線とは異なる配線層から成り、前記第1の方向と異なる第2の方向に前記画素部外まで延びて形成された、第2の配線と、
前記第1の配線及び前記第2の配線を電気的に接続するコンタクト部を含む
固体撮像装置。
A semiconductor substrate;
A photodiode formed on the semiconductor substrate and subjected to photoelectric conversion;
A pixel portion in which pixels composed of the photodiodes are disposed;
A first wiring that is electrically connected to the semiconductor substrate of the pixel portion by a contact portion and that extends outside the pixel portion in a first direction;
A second wiring formed of a wiring layer different from the first wiring and extending outside the pixel portion in a second direction different from the first direction;
A solid-state imaging device including a contact portion that electrically connects the first wiring and the second wiring.
複数個の画素において、電荷蓄積部及びトランジスタ部を共有している、請求項1に記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein a plurality of pixels share a charge storage portion and a transistor portion. 前記電荷蓄積部と前記フォトダイオードとの間の転送ゲートと、前記転送ゲートに電気的に接続された制御線をさらに含み、前記複数個の画素の前記転送ゲートにそれぞれ接続された複数本の制御線の間に、同じ高さで前記第2の配線が配置されている、請求項2に記載の固体撮像装置。   A plurality of controls respectively connected to the transfer gates of the plurality of pixels, further comprising: a transfer gate between the charge storage unit and the photodiode; and a control line electrically connected to the transfer gate. The solid-state imaging device according to claim 2, wherein the second wiring is arranged at the same height between the lines. 前記第1の配線及び前記第2の配線には、前記画素部外から接地電位が供給される、請求項1〜請求項3のいずれか1項に記載の固体撮像装置。 The solid-state imaging device according to any one of claims 1 to 3 , wherein a ground potential is supplied to the first wiring and the second wiring from outside the pixel portion. 光学系と、
請求項1〜請求項4のいずれか1項に記載の固体撮像装置と、
前記固体撮像装置の出力信号を処理する信号処理回路を備えた
電子機器。
Optical system,
The solid-state imaging device according to any one of claims 1 to 4 ,
An electronic apparatus including a signal processing circuit that processes an output signal of the solid-state imaging device.
JP2012085666A 2012-04-04 2012-04-04 Solid-state imaging device, electronic equipment Expired - Fee Related JP5994344B2 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2012085666A JP5994344B2 (en) 2012-04-04 2012-04-04 Solid-state imaging device, electronic equipment
CN201611254577.0A CN106847848B (en) 2012-04-04 2013-03-28 Solid-state imaging device and electronic apparatus
CN201310104772.5A CN103367377B (en) 2012-04-04 2013-03-28 Solid state image pickup device and electronic equipment
US13/852,575 US9184208B2 (en) 2012-04-04 2013-03-28 Solid-state imaging apparatus and electronic device with improved image quality and increased yield
CN201611254173.1A CN106935604B (en) 2012-04-04 2013-03-28 Solid state image pickup device and electronic equipment
US14/830,405 US9356057B2 (en) 2012-04-04 2015-08-19 Solid-state imaging apparatus and electronic device
US15/050,165 US9419042B2 (en) 2012-04-04 2016-02-22 Solid-state imaging apparatus and electronic device
US15/193,876 US9530815B2 (en) 2012-04-04 2016-06-27 Solid-state imaging apparatus and electronic device
US15/348,564 US9929193B2 (en) 2012-04-04 2016-11-10 Solid-state imaging apparatus and electronic device
US15/889,699 US10084002B2 (en) 2012-04-04 2018-02-06 Solid-state imaging apparatus and electronic device
US16/115,169 US10490581B2 (en) 2012-04-04 2018-08-28 Solid-state imaging apparatus and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012085666A JP5994344B2 (en) 2012-04-04 2012-04-04 Solid-state imaging device, electronic equipment

Publications (3)

Publication Number Publication Date
JP2013219082A JP2013219082A (en) 2013-10-24
JP2013219082A5 true JP2013219082A5 (en) 2015-04-16
JP5994344B2 JP5994344B2 (en) 2016-09-21

Family

ID=49291549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012085666A Expired - Fee Related JP5994344B2 (en) 2012-04-04 2012-04-04 Solid-state imaging device, electronic equipment

Country Status (3)

Country Link
US (7) US9184208B2 (en)
JP (1) JP5994344B2 (en)
CN (3) CN106847848B (en)

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JP2016111425A (en) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 Imaging apparatus
JP6758952B2 (en) * 2016-06-28 2020-09-23 キヤノン株式会社 Imaging equipment and imaging system
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