JP2019026709A - Thermosetting resin composition for light reflection, optical semiconductor element mounting substrate and method for producing the same, and optical semiconductor device - Google Patents

Abstract

To provide a thermosetting resin composition for light reflection that forms a cured product having excellent thermal discoloration resistance and mechanical properties, and improved durability, an optical semiconductor element mounting substrate comprising the same and a method for producing the same, and an optical semiconductor device.SOLUTION: A thermosetting resin composition for light reflection contains epoxy resin, a curing agent, an inorganic filler, a white pigment and boron nitride.SELECTED DRAWING: None

Description

  The present invention relates to a thermosetting resin composition for light reflection, a substrate for mounting an optical semiconductor element, a method for manufacturing the same, and an optical semiconductor device.

  An optical semiconductor device in which an optical semiconductor element such as an LED (Light Emitting Diode) and a phosphor is combined has high energy efficiency and has a long life, so that it can be used for outdoor displays, portable liquid crystal backlights, in-vehicle applications, etc. It is used for various purposes and its demand is expanding. Accordingly, the brightness of LED devices has been increased, and it is required to prevent an increase in junction temperature due to an increase in the amount of heat generated by the element or deterioration of the optical semiconductor device due to a direct increase in light energy.

  Patent Document 1 discloses a substrate for mounting an optical semiconductor element using a thermosetting resin composition having a high reflectance in the near-ultraviolet light region from visible light after resin curing. Patent Document 2 discloses an optical semiconductor element mounting member with reduced light leakage.

JP 2012-254633 A JP 2010-287837 A

  By the way, the optical semiconductor element mounting substrate is required to maintain optical characteristics even when used for a long time at high temperature. Therefore, it is necessary to form a cured product that can maintain the reflectance for a long period of time by improving the heat discoloration resistance of the resin in the thermosetting resin composition for light reflection. And the light-reflective thermosetting resin composition is also required to have high heat hardness and bending strength and excellent mechanical properties.

  Therefore, the present invention provides a thermosetting resin composition for light reflection that forms a cured product having excellent heat discoloration and mechanical properties and improved durability, a substrate for mounting an optical semiconductor element using the same, and An object of the present invention is to provide a manufacturing method thereof and an optical semiconductor device.

  The present invention relates to a light-reflective thermosetting resin composition containing an epoxy resin, a curing agent, an inorganic filler, a white pigment, and boron nitride.

  The content of boron nitride may be 20 to 500 parts by mass with respect to 100 parts by mass of the epoxy resin. Further, the white pigment may contain at least one selected from the group consisting of titanium oxide, zinc oxide, alumina, magnesium oxide, antimony oxide, and zirconium oxide.

  In another aspect, the present invention relates to an optical semiconductor element mounting substrate comprising a cured product of the above-described light-reflective thermosetting resin composition. The substrate for mounting an optical semiconductor element according to the present invention may have a recess composed of a bottom surface and a wall surface, and the bottom surface of the recess may be a mounting portion for the optical semiconductor element. In this case, at least a part of the wall surface of the recess is a cured product of the thermosetting resin composition for light reflection. An optical semiconductor element mounting substrate according to the present invention includes a substrate, a first connection terminal and a second connection terminal provided on the substrate, and a first connection terminal and a second connection terminal. And a cured product of the above-described thermosetting resin composition for light reflection provided therebetween.

  In still another aspect, the present invention relates to an optical semiconductor device having the optical semiconductor element mounting substrate and an optical semiconductor element mounted on the optical semiconductor element mounting substrate.

  In still another aspect, the present invention relates to a method for manufacturing a substrate for mounting an optical semiconductor element having a recess composed of a bottom surface and a wall surface. The manufacturing method according to the present invention includes a step of forming at least a part of the wall surface of the recess by transfer molding the thermosetting resin composition for light reflection.

  According to the present invention, a thermosetting resin composition for light reflection that forms a cured product having excellent heat discoloration and mechanical properties and improved durability, an optical semiconductor element mounting substrate using the same, and The manufacturing method and the optical semiconductor device can be provided.

It is a perspective view which shows one Embodiment of the board | substrate for optical semiconductor element mounting. It is the schematic which shows one Embodiment of the process of manufacturing the board | substrate for optical semiconductor element mounting. It is a perspective view which shows one Embodiment in the state which mounted the optical semiconductor element in the board | substrate for optical semiconductor element mounting. It is a schematic cross section showing one embodiment of an optical semiconductor device. It is a schematic cross section which shows other embodiment of an optical semiconductor device. It is a schematic cross section which shows other embodiment of an optical semiconductor device. It is a schematic cross section which shows one Embodiment of a copper clad laminated board. It is a schematic cross section which shows an example of the optical semiconductor device produced using the copper clad laminated board. It is a schematic cross section which shows other embodiment of an optical semiconductor device. It is the figure which showed typically the structure and burr | flash of a burr | flash measurement metal mold | die used at the time of a burr | flash length measurement.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the illustrated ratios.

  In this specification, the numerical range indicated using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively. In the numerical ranges described stepwise in this specification, the upper limit value or the lower limit value of a numerical range in a certain step may be replaced with the upper limit value or the lower limit value of a numerical range in another step. In the numerical range described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples. “A or B” only needs to include either A or B, and may include both. The materials exemplified in the present specification can be used singly or in combination of two or more unless otherwise specified. Moreover, in this specification, (meth) acrylate means at least one of an acrylate and a corresponding methacrylate.

[Thermosetting resin composition for light reflection]
The thermoreflective resin composition for light reflection of this embodiment contains an epoxy resin, a curing agent, an inorganic filler, a white pigment, and boron nitride.

(Epoxy resin)
As an epoxy resin, the epoxy resin generally used with the epoxy resin molding material for electronic component sealing can be used. By containing the epoxy resin, the thermosetting resin composition according to the present embodiment can form a cured product having high heat hardness and bending strength and improved mechanical properties. Examples of epoxy resins include epoxy resins obtained by epoxidizing phenols and aldehydes such as phenol novolac type epoxy resins and orthocresol novolak type epoxy resins; diphenols such as bisphenol A, bisphenol F, bisphenol S and alkyl-substituted bisphenols. Glycidyl ether; Glycidylamine type epoxy resin obtained by reaction of polyamine such as diaminodiphenylmethane and isocyanuric acid and epichlorohydrin; Linear aliphatic epoxy resin obtained by oxidizing olefinic bond with peracid such as peracetic acid; and alicyclic ring Group epoxy resin. Epoxy resins may be used alone or in combination of two or more.

  Among these, triazine derivative epoxy resins such as diglycidyl isocyanurate and triglycidyl isocyanurate, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and 1,2-cyclohexanedicarboxylic acid, A dicarboxylic acid diglycidyl ester derived from 3-cyclohexanedicarboxylic acid or 1,4-cyclohexanedicarboxylic acid is preferred because it is less colored. For the same reason, diglycidyl esters of dicarboxylic acids such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, nadic acid and methylnadic acid are also suitable. Examples thereof include glycidyl esters such as nuclear hydrogenated trimellitic acid and nuclear hydrogenated pyromellitic acid having an alicyclic structure in which an aromatic ring is hydrogenated. Polyorganosiloxane having an epoxy group, which is produced by heating a silane compound in the presence of an organic solvent, an organic base and water and hydrolyzing and condensing the silane compound, may also be mentioned.

  A commercially available product may be used as the epoxy resin. Examples of 3,4-epoxycyclohexylmethyl-3 ′, 4′-epoxycyclohexanecarboxylate include, for example, Daicel Corporation product names “Celoxide 2021”, “Celoxide 2021A” and “Celoxide 2021P”, products of Dow Chemical Japan Co., Ltd. The names “ERL 4221”, “ERL 4221D” and “ERL 4221E” are available. As bis (3,4-epoxycyclohexylmethyl) adipate, for example, the product name “ERL4299” of Dow Chemical Japan Co., Ltd. and the product name “EXA-7015” of DIC Corporation can be obtained. As 1-epoxyethyl-3,4-epoxycyclohexane or limonene diepoxide, for example, product names “jER YX8000”, “jER YX8034” and “jER YL7170” of Mitsubishi Chemical Corporation, and product names “Celoxide 2081” of Daicel Corporation. ”,“ Celoxide 3000 ”,“ Epolide GT301 ”,“ Epolide GT401 ”and“ EHPE3150 ”are available. As trisglycidyl isocyanurate, for example, the product name “TEPIC” of Nissan Chemical Industries, Ltd. can be obtained.

(Curing agent)
As a hardening | curing agent, the hardening | curing agent generally used with the epoxy resin molding material for electronic component sealing can be used. The curing agent is not particularly limited as long as it can react with an epoxy resin to obtain a cured product, but a curing agent with little coloring is preferable, and a colorless or light yellow curing agent is more preferable. Examples of the curing agent include an acid anhydride curing agent, an isocyanuric acid derivative curing agent, and a phenol curing agent. You may use a hardening | curing agent individually by 1 type or in combination of 2 or more types.

  Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Examples include acid, dimethyl glutaric anhydride, diethyl glutaric anhydride, succinic anhydride, methyl hexahydrophthalic anhydride, and methyl tetrahydrophthalic anhydride.

  Isocyanuric acid derivatives include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, 1,3,5-tris (3-carboxypropyl) ) Isocyanurate and 1,3-bis (2-carboxyethyl) isocyanurate.

  Examples of phenolic curing agents include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene. , Formaldehyde, benzaldehyde, salicylaldehyde, and other aldehydes obtained by condensation or cocondensation in the presence of an acidic catalyst; novolak-type phenol resins; phenols and / or naphthols; Phenol-aralkyl resins synthesized from aralkyl-type phenol resins such as biphenylene-type phenol-aralkyl resins and naphthol-aralkyl resins; phenols and / or naphtho Dicyclopentadiene type phenol resin; triphenylmethane type phenol resin; terpene modified phenol resin; paraxylylene and / or metaxylylene modified phenol resin; melamine modified phenol resin; Moreover, the phenol resin obtained by copolymerizing these 2 or more types is mentioned.

  Among these curing agents, phthalic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, glutaric anhydride, dimethylglutaric anhydride, anhydrous It is preferable to use diethyl glutaric acid or 1,3,5-tris (3-carboxypropyl) isocyanurate.

  In the thermosetting resin composition according to the present embodiment, the content of the curing agent is preferably 10 to 150 parts by mass and more preferably 50 to 130 parts by mass with respect to 100 parts by mass of the epoxy resin. Preferably, it is 60-120 mass parts.

  The mixing ratio of the curing agent is 0.5 to 2.0 equivalents of the active group (acid anhydride group or hydroxyl group) in the curing agent capable of reacting with the epoxy group with respect to 1 equivalent of the epoxy group in the epoxy resin. It is preferable that it becomes 0.6-1.5 equivalent, and it is still more preferable that it will become 0.7-1.2 equivalent. When the active group is 0.5 equivalent or more, the glass transition temperature of the cured product formed from the thermosetting resin composition is increased, and a sufficient elastic modulus is easily obtained. On the other hand, when the active group is 2.0 equivalents or less, the strength after curing is difficult to decrease.

(Prepolymer)
The epoxy resin and the curing agent may be present in the thermosetting resin composition in a prepolymer state reacted in advance. The prepolymer contains, for example, the epoxy resin and a curing agent, and other components such as a curing accelerator as necessary, preferably at 60 to 120 ° C., more preferably at 70 to 110 ° C., preferably 4 to It is obtained by reacting for 20 hours, more preferably 6 to 15 hours. By existing in a prepolymer state, the burr length can be further reduced.

(Inorganic filler)
The thermosetting resin composition according to the present embodiment can improve moldability by containing an inorganic filler. The inorganic filler according to the present embodiment is an inorganic compound that is not included in the white pigment described later. Examples of the inorganic filler include quartz, fumed silica, precipitated silica, anhydrous silica, fused silica, crystalline silica, ultrafine amorphous silica, barium sulfate, magnesium carbonate, barium carbonate, aluminum hydroxide, and hydroxide. Examples include magnesium, potassium titanate, and calcium silicate. From the viewpoint of moldability, the inorganic filler preferably contains silica.

  The center particle diameter of the inorganic filler is preferably 1 to 100 μm, more preferably 3 to 50 μm, and still more preferably 5 to 40 μm, from the viewpoint of improving packing properties with the white pigment. In this specification, the center particle diameter can be obtained as a mass average value D50 (or median diameter) in particle size distribution measurement by a laser light diffraction method.

(White pigment)
The white pigment is used for imparting a white color tone to the cured product (molded product) obtained from the thermosetting resin composition according to the present embodiment, and particularly by making the color tone highly white. The light reflectance of the body can be improved. In this specification, as a white pigment, the light reflectance in 460 nm of the hardened | cured material obtained by adding 5 volume% of white inorganic compounds with respect to the said epoxy resin, mixing, and hardening at 180 degreeC shows 75% or more. Inorganic compounds are included. In addition, the inorganic compound in which the said light reflectivity shows less than 75% is included in an inorganic filler.

  Examples of the white pigment include rare earth oxides such as yttrium oxide, titanium oxide, zinc oxide, aluminum oxide (alumina), magnesium oxide, antimony oxide, zinc sulfate, and zirconium oxide. You may use these individually by 1 type or in combination of 2 or more types. In order to further improve the light reflectance, the white pigment may include at least one selected from the group consisting of titanium oxide, zinc oxide, alumina, magnesium oxide, antimony oxide, and zirconium oxide.

  The center particle diameter of the white pigment is preferably 0.05 to 10 μm, more preferably 0.08 to 8 μm, and still more preferably 0.1 to 5 μm. When the center particle diameter of the white pigment is 0.05 μm or more, the dispersibility becomes better, and when it is 10 μm or less, the light reflection property of the cured product becomes better.

(Boron nitride)
By containing boron nitride, the thermosetting resin composition according to the present embodiment can form a cured product having an excellent balance of light reflectivity, insulation, heat dissipation, and heat resistance.

  The crystal structure of boron nitride (BN) mainly includes hexagonal (h-BN), cubic (c-BN), wurtzite (w-BN), rhombohedral (r-BN) structures, etc. It has been known. Among these, hexagonal boron nitride is preferable from the viewpoint of excellent heat resistance and thermal conductivity.

  The central particle size of boron nitride is preferably 10 to 200 μm, more preferably 20 to 150 μm, still more preferably 30 to 100 μm, and particularly preferably 60 to 100 μm. When the center particle diameter of boron nitride is 10 μm or more, heat dissipation can be further improved. Moreover, light reflectivity can be improved more as the center particle diameter of boron nitride is 200 micrometers or less.

  From the viewpoint of improving the heat dissipation of the cured product, the content of boron nitride in the thermosetting resin composition is preferably 10 parts by mass or more, more preferably 20 parts by mass or more, with respect to 100 parts by mass of the epoxy resin. More preferred is part by mass or more. From the viewpoint of improving the moldability and the mechanical properties of the cured product, the content of boron nitride in the resin composition is preferably 500 parts by mass or less, more preferably 300 parts by mass or less, with respect to 100 parts by mass of the epoxy resin. 270 mass parts or less are still more preferable, and 240 mass parts or less are especially preferable. The content of boron nitride may be 10 to 500 parts by mass, 20 to 500 parts by mass, 20 to 300 parts by mass, 20 to 270 parts by mass, or 30 to 240 parts by mass with respect to 100 parts by mass of the epoxy resin. .

  From the viewpoint of improving moldability, the total content of the inorganic filler, the white pigment and the boron nitride is preferably 10 to 90% by mass based on the total amount of the thermosetting resin composition, and 30 to 87% by mass. % Is more preferable, and it is still more preferable that it is 50-84 mass%.

<Other ingredients>
The thermosetting resin composition according to this embodiment may contain a curing accelerator in order to accelerate the curing reaction of the epoxy resin. Moreover, in order to improve the adhesiveness of an inorganic filler and an epoxy resin, you may add a coupling agent to a thermosetting resin composition. Furthermore, the thermosetting resin composition may further contain hollow particles in order to further improve moldability and light reflectance.

(Curing accelerator)
Examples of the curing accelerator include amine compounds, imidazole compounds, organic phosphorus compounds, alkali metal compounds, alkaline earth metal compounds, and quaternary ammonium salts. Among these curing accelerators, it is preferable to use an amine compound, an imidazole compound, or an organic phosphorus compound. A hardening accelerator may be used individually by 1 type or in combination of 2 or more types.

  Examples of the amine compound include 1,8-diaza-bicyclo [5.4.0] undecene-7, triethylenediamine, and tri-2,4,6-dimethylaminomethylphenol. Examples of the imidazole compound include 2-ethyl-4-methylimidazole. Examples of the organic phosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate and tetra-n. -Butylphosphonium-tetraphenylborate.

  The content of the curing accelerator in the thermosetting resin composition is preferably 0.01 to 8 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the epoxy resin. Preferably, it is 0.3-4 mass parts. When the content of the curing accelerator is 0.01 parts by mass or more, a sufficient curing acceleration effect can be easily obtained, and when it is 8 parts by mass or less, discoloration of the cured product is easily suppressed.

(Coupling agent)
Although it does not specifically limit as a coupling agent, For example, a silane coupling agent and a titanate coupling agent are mentioned. Examples of the silane coupling agent include epoxy silane compounds, amino silane compounds, cationic silane compounds, vinyl silane compounds, acrylic silane compounds, and mercapto silane compounds. The content of the coupling agent may be 5% by mass or less based on the total amount of the thermosetting resin composition.

(Hollow particles)
The hollow particle is a particle having a void inside, and the substance constituting the outer shell is not particularly limited. Since the hollow particles refract and reflect incident light on the surface and the inner wall, a hardened material with further improved light reflectivity can be formed by using it together with a white pigment.

  Examples of the hollow particles include inorganic hollow particles and organic hollow particles. Examples of the inorganic hollow particles include sodium silicate glass, aluminum silicate glass, borosilicate soda glass, and shirasu (white sand). Inorganic hollow particles may be used as the inorganic filler. Examples of the organic hollow particles include polystyrene resins, poly (meth) acrylate resins, and crosslinked products thereof. From the viewpoint of heat resistance and pressure strength, the outer shell of the hollow particles is at least one selected from the group consisting of sodium silicate glass, aluminum silicate glass, borosilicate soda glass, shirasu, cross-linked styrene resin and cross-linked acrylic resin. It is preferable to be composed of at least one material selected from the group consisting of sodium silicate glass, aluminum silicate glass, borosilicate soda glass and shirasu.

  The center particle diameter of the hollow particles is preferably 0.1 to 50 μm, and more preferably 0.1 to 30 μm. When the center particle diameter of the hollow particles is 0.1 μm or more, the hollow particles are easily dispersed uniformly when preparing the thermosetting resin composition. Moreover, it is easy to improve the light reflection characteristic of the hardened | cured material formed as the center particle diameter of a hollow particle is 50 micrometers or less.

  From the viewpoint of further improving the light reflectance, the content of the hollow particles is preferably 10 to 300 parts by mass, more preferably 30 to 200 parts by mass, with respect to 100 parts by mass of the epoxy resin. More preferably, it is -150 mass parts.

  You may add additives, such as antioxidant, a mold release agent, and an ion capture agent, to the thermosetting resin composition which concerns on this embodiment as needed.

  The light-reflective thermosetting resin composition of this embodiment can be produced by uniformly dispersing and mixing the various components described above. The production means, conditions, etc. are not particularly limited. Examples of a general method for producing a thermosetting resin composition include a method of kneading each component with a kneader, a roll, an extruder, a raking machine, or a planetary mixer that combines rotation and revolution. . When kneading each component, it is preferable to carry out in a molten state from the viewpoint of improving dispersibility.

  The kneading conditions may be appropriately determined depending on the type or blending amount of each component. For example, kneading is preferably performed at 15 to 100 ° C. for 5 to 40 minutes, and kneading at 20 to 100 ° C. for 10 to 30 minutes is more preferable. preferable. When the kneading temperature is 15 ° C. or higher, each component can be easily kneaded and the dispersibility can be improved. When the kneading temperature is 100 ° C. or lower, it is possible to prevent the epoxy resin from increasing in molecular weight and curing during kneading. When the kneading time is 5 minutes or longer, a sufficient dispersion effect is easily obtained. When the kneading time is 40 minutes or less, it is possible to prevent the epoxy resin from increasing in molecular weight and curing during kneading.

  The thermosetting resin composition for light reflection of the present embodiment is a substrate material for mounting an optical semiconductor element that requires high light reflectivity and heat resistance, an electrical insulating material, an optical semiconductor sealing material, an adhesive material, a paint material, It is useful in various applications such as an epoxy resin molding material for transfer molding. Hereinafter, an example of using as an epoxy resin molding material for transfer molding will be described.

  The burr length when the thermosetting resin composition according to this embodiment is transfer molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a molding time of 90 seconds may be 7 mm or less. Preferably, it is 6 mm or less, more preferably 5 mm or less. If the length of the burr is 7 mm or less, the resin contamination of the opening (concave portion) serving as the optical semiconductor element mounting region can be reduced when the optical semiconductor element mounting substrate is manufactured, and the optical semiconductor element and the metal wiring are electrically connected. It becomes easy to connect.

  Shore D hardness immediately after molding when the thermosetting resin composition according to the present embodiment is transfer molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds, that is, when hot The hardness is preferably 80 or more at 150 ° C., and more preferably 85 or more. When the hot hardness is 80 or more, the molded product can be easily released from the mold.

  From the viewpoint of toughness, the bending strength when the thermosetting resin composition according to this embodiment is transfer molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds is 25 The pressure is preferably 65 MPa or more, and more preferably 70 MPa or more at ° C. When the bending strength is 65 MPa or more, the toughness is excellent.

  From the viewpoint of heat resistance deterioration, the thermal conductivity when the thermosetting resin composition according to this embodiment is transfer molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds is 25. It is preferably 0.65 W / (m · K) or more at ° C, more preferably 0.70 W / (m · K) or more, and further preferably 0.75 W / (m · K) or more. preferable.

  From the viewpoint of improving the brightness of the optical semiconductor device, the initial light reflectance at a wavelength of 460 nm of the cured product of the thermosetting resin composition according to the present embodiment is preferably 80% or more, and 85% or more. Is more preferable, and it is still more preferable that it is 90% or more. From the viewpoint of improving heat resistant colorability, the light reflectance at a wavelength of 460 nm after the cured product is heat-treated at 150 ° C. for 1000 hours is preferably 65% or more, more preferably 70% or more, More preferably, it is 75% or more.

[Optical semiconductor device mounting substrate]
The substrate for mounting an optical semiconductor element of this embodiment has a recess composed of a bottom surface and a wall surface. The bottom surface of the recess is an optical semiconductor element mounting portion (optical semiconductor element mounting region), and at least a part of the wall surface of the recess, that is, the inner peripheral side surface of the recess, is a cured product of the thermosetting resin composition for light reflection of this embodiment. It consists of

  FIG. 1 is a perspective view showing an embodiment of a substrate for mounting an optical semiconductor element. The optical semiconductor element mounting substrate 110 includes a metal wiring 105 (first connection terminal and second connection terminal) on which Ni / Ag plating 104 is formed, and a metal wiring 105 (first connection terminal and second connection terminal). Insulating resin molded body 103 ′ provided between the terminals) and the reflector 103, and formed of the metal wiring 105 formed with the Ni / Ag plating 104 and the insulating resin molded body 103 ′ and the reflector 103. An optical semiconductor element mounting region (concave portion) 200 is provided. The bottom surface of the recess 200 is composed of the metal wiring 105 on which the Ni / Ag plating 104 is formed and the insulating resin molded body 103 ′, and the wall surface of the recess 200 is composed of the reflector 103. The reflector 103 and the insulating resin molded body 103 ′ are molded bodies made of a cured product of the light reflecting thermosetting resin composition according to the above-described embodiment.

  Although the manufacturing method of the board | substrate for optical semiconductor element mounting is not specifically limited, For example, it can manufacture by transfer molding using the thermosetting resin composition for light reflection. FIG. 2 is a schematic view showing an embodiment of a process for manufacturing a substrate for mounting an optical semiconductor element. The substrate for mounting an optical semiconductor element is formed by, for example, punching from a metal foil, forming a metal wiring 105 by a known method such as etching, and applying Ni / Ag plating 104 by electroplating ((a) in FIG. 2), then The metal wiring 105 is placed in a mold 151 having a predetermined shape, a light-reflective thermosetting resin composition is injected from the resin injection port 150 of the mold 151, and transfer molding is performed under predetermined conditions (FIG. 2). (B)) and can be manufactured through a step of removing the mold 151 ((c) of FIG. 2). In this manner, the optical semiconductor element mounting region (concave portion) 200 is formed on the optical semiconductor element mounting substrate. The optical semiconductor element mounting region (concave portion) 200 is surrounded by the reflector 103 made of a cured product of the light-reflective thermosetting resin composition. . The bottom surface of the recess 200 is made of a metal wiring 105 serving as a first connection terminal and a metal wiring 105 serving as a second connection terminal, and a cured product of a light-reflective thermosetting resin composition provided therebetween. And an insulating resin molded body 103 ′. In addition, as the conditions for the transfer molding, the mold temperature is 170 to 200 ° C., more preferably 170 to 190 ° C., the molding pressure is 0.5 to 20 MPa, more preferably 2 to 8 MPa, and the after cure temperature is 60 to 120 seconds. 1 to 3 hours are preferable at 120 ° C to 180 ° C.

[Optical semiconductor device]
The optical semiconductor device according to the present embodiment includes the optical semiconductor element mounting substrate and an optical semiconductor element mounted on the optical semiconductor element mounting substrate. As a more specific example, the optical semiconductor element mounting substrate, the optical semiconductor element provided in the recess of the optical semiconductor element mounting substrate, and the phosphor-containing envelope that fills the recess and seals the optical semiconductor element An optical semiconductor device provided with a stop resin part is mentioned.

  FIG. 3 is a perspective view showing an embodiment in which the optical semiconductor element 100 is mounted on the optical semiconductor element mounting substrate 110. As shown in FIG. 3, the optical semiconductor element 100 is mounted at a predetermined position in the optical semiconductor element mounting region (concave portion) 200 of the optical semiconductor element mounting substrate 110 and is electrically connected by the metal wiring 105 and the bonding wire 102. The 4 and 5 are schematic cross-sectional views showing an embodiment of an optical semiconductor device. As shown in FIGS. 4 and 5, the optical semiconductor device includes an optical semiconductor element mounting substrate 110, an optical semiconductor element 100 provided at a predetermined position in the concave portion 200 of the optical semiconductor element mounting substrate 110, and the concave portion 200. And a sealing resin portion made of a transparent sealing resin 101 including a phosphor 106 that seals the optical semiconductor element, and a metal wiring in which the optical semiconductor element 100 and the Ni / Ag plating 104 are formed 105 is electrically connected by a bonding wire 102 or a solder bump 107.

  FIG. 6 is also a schematic cross-sectional view showing an embodiment of the optical semiconductor device. In the optical semiconductor device shown in FIG. 6, the LED element 300 is disposed via a die bonding material 306 at a predetermined position on the lead 304 on which the reflector 303 is formed, and the LED element 300 and the lead 304 are electrically connected by the bonding wire 301. The LED element 300 is sealed with a transparent sealing resin 302 that is connected and includes a phosphor 305.

  As mentioned above, although preferred embodiment of this invention was described, this invention is not restrict | limited to this. For example, the thermosetting resin composition for light reflection of the present embodiment can be used as a light reflection coating agent. As this embodiment, a copper-clad laminate, an optical semiconductor element mounting substrate, and an optical semiconductor element will be described.

  The copper clad laminate according to the present embodiment includes a light reflecting resin layer formed using the above-described thermosetting resin composition for light reflection, and a copper foil laminated on the light reflecting resin layer. .

  FIG. 7 is a schematic cross-sectional view showing a preferred embodiment of a copper clad laminate. As shown in FIG. 7, a copper clad laminate 400 includes a base material 401, a light reflecting resin layer 402 laminated on the base material 401, and a copper foil 403 laminated on the light reflecting resin layer 402. It is equipped with. Here, the light reflecting resin layer 402 is formed using the above-described thermosetting resin composition for light reflection.

  As the base material 401, a base material used for a copper-clad laminate can be used without particular limitation, and examples thereof include a resin laminate such as an epoxy resin laminate and an optical semiconductor mounting substrate.

  For example, the copper clad laminate 400 may be formed by applying the light-reflective thermosetting resin composition of the present embodiment to the surface of the base material 401, stacking the copper foil 403, and applying heat and pressure to cure the thermosetting resin composition. It can be produced by forming a light reflecting resin layer 402 made of

  As a method for applying the thermosetting resin composition to the substrate 401, for example, a coating method such as a printing method, a die coating method, a curtain coating method, a spray coating method, or a roll coating method can be used. At this time, the thermosetting resin composition may contain a solvent so as to facilitate application. In addition, when using a solvent, about the thing based on the whole quantity of the thermosetting resin composition by the mixture ratio of each component mentioned above, it is preferable to set what remove | excluded the solvent as a whole quantity.

  The heating and pressing conditions are not particularly limited. For example, it is preferable to perform heating and pressing under conditions of 130 to 180 ° C., 0.5 to 4 MPa, and 30 to 600 minutes.

  Using the copper-clad laminate, a printed wiring board for an optical member such as an LED can be produced. Note that the copper clad laminate 400 shown in FIG. 7 is obtained by laminating the light reflecting resin layer 402 and the copper foil 403 on one side of the base material 401, but the copper clad laminate is light on both sides of the base material 401. The reflective resin layer 402 and the copper foil 403 may be laminated respectively. Further, the copper clad laminate may be composed of only the light reflecting resin layer 402 and the copper foil 403 without using the base material 401. In this case, the light reflecting resin layer 402 plays a role as a base material. In this case, for example, the light reflecting resin layer 402 can be obtained by impregnating the present thermosetting resin composition into glass cloth or the like and curing it.

  FIG. 8 is a schematic cross-sectional view showing an example of an optical semiconductor device manufactured using a copper-clad laminate. As shown in FIG. 8, the optical semiconductor device 500 is a surface-mounted light emitting diode including an optical semiconductor element 410 and a transparent sealing resin 404 provided so as to seal the optical semiconductor element 410. . In the optical semiconductor device 500, the optical semiconductor element 410 is bonded to the copper foil 403 through the adhesive layer 408, and is electrically connected to the copper foil 403 by the bonding wire 409.

  As another embodiment of the substrate for mounting an optical semiconductor element, a light reflecting resin layer formed between a plurality of conductor members (connection terminals) on a base material using the above-described thermosetting resin composition for light reflection. Examples thereof include a substrate for mounting an optical semiconductor element. In another embodiment of the optical semiconductor device, the optical semiconductor element is mounted on the optical semiconductor element mounting substrate.

  FIG. 9 is a schematic cross-sectional view showing a preferred embodiment of an optical semiconductor device. As shown in FIG. 9, the optical semiconductor device 600 is formed between a base member 601, a plurality of conductor members 602 formed on the surface of the base member 601, and a plurality of conductor members (connection terminals) 602. An optical semiconductor element 610 is mounted on a substrate for mounting an optical semiconductor element comprising a light reflecting resin layer 603 made of the thermosetting resin composition for light reflection, and is transparent so that the optical semiconductor element 610 is sealed. A surface-mount light emitting diode provided with a sealing resin 604. In the optical semiconductor device 600, the optical semiconductor element 610 is bonded to the conductor member 602 through the adhesive layer 608, and is electrically connected to the conductor member 602 through a bonding wire 609.

  As the substrate 601, a substrate used for an optical semiconductor element mounting substrate can be used without particular limitation, and examples thereof include a resin laminate such as an epoxy resin laminate.

  The conductor member 602 functions as a connection terminal, and can be formed by a known method such as a method of photoetching a copper foil.

  The substrate for mounting an optical semiconductor element is a light comprising a thermosetting resin composition for light reflection by applying the light reflecting thermosetting resin composition between a plurality of conductor members 602 on a base member 601 and curing by heating. It can be manufactured by forming the reflective resin layer 603.

  As a method for applying the light-reflective thermosetting resin composition to the substrate 601, for example, a coating method such as a printing method, a die coating method, a curtain coating method, a spray coating method, or a roll coating method can be used. At this time, the light-reflective thermosetting resin composition can contain a solvent so as to facilitate application. In addition, when using a solvent, about the thing based on the resin composition whole quantity by the mixture ratio of each component mentioned above, it is preferable to set what remove | excluded the solvent as a whole quantity.

  Although it does not specifically limit as a heating condition at the time of heat-hardening the coating film of the thermosetting resin composition for light reflection, For example, you may heat on the conditions of 130-180 degreeC and 30-600 minutes.

  Thereafter, the resin component adhering excessively to the surface of the conductor member 602 is removed by buffing or the like to expose the circuit formed of the conductor member 602, thereby forming an optical semiconductor element mounting substrate.

  Further, in order to ensure the adhesion between the light reflecting resin layer 603 and the conductor member 602, the conductor member 602 may be subjected to a roughening treatment such as an oxidation-reduction treatment or a CZ treatment (manufactured by MEC Co., Ltd.).

  As mentioned above, although preferred embodiment of this invention was described, this invention is not restrict | limited to this.

  EXAMPLES Hereinafter, although an Example explains this invention in full detail, this invention is not limited to these.

[Production of thermosetting resin composition for light reflection]
Each component was blended according to the blending ratio (parts by mass) shown in Table 1 or 2, and sufficiently kneaded with a mixer, and then melt-kneaded with a mixing roll at 40 ° C. for 15 minutes to obtain a kneaded product. The kneaded product was cooled and pulverized to prepare thermoreflective resin compositions for light reflection in Examples and Comparative Examples, respectively.

[Evaluation]
(Spiral flow)
Using a spiral flow measurement mold in accordance with the standard of EMMI-1-66, transfer molding of a thermosetting resin composition under conditions of a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. The flow distance (cm) of the thermosetting resin composition at that time was measured.

(Burr length)
The obtained thermosetting resin composition was poured into a burr measurement mold (see FIG. 10) using a pot and then cured to form a thermosetting resin composition. The mold temperature during molding was 180 ° C., the molding pressure was 6.9 MPa, the resin pouring time (transfer time) was 10 seconds, the curing temperature was 180 ° C., and the curing time was 90 seconds. After molding, the upper mold of the mold for measuring burrs was removed, and the maximum value of the length of burrs generated by flowing through the gap between the upper mold and the lower mold of the mold was measured using calipers.

  FIGS. 10A and 10B are diagrams schematically showing the structure and burrs of a burr measuring mold used when measuring the burr length, where FIG. 10A is a side sectional view and FIG. 10B is a plan view. As shown in FIG. 10, the burr measurement mold is composed of a pair of an upper mold 700 and a lower mold 701, and the upper mold 700 has a resin injection port 702. The lower mold 701 includes a cavity 703 facing the resin injection port 702 and six slits 704, 705, 706, 707, 708 and 709 extending from the cavity 703 toward the outer periphery of the mold. As shown in FIG. 10, the burr means a portion (resin burr) 710 in which the thermosetting resin composition flows from the extension of the cavity 703 along each slit and is cured. Here, the “burr length” defined in the present invention refers to the upper mold 700 of the mold from the cavity 703 at the center of the mold when transfer molding is performed using the mold for burr measurement shown in FIG. This is a value obtained by measuring the maximum radial length of the cured product (resin burr 710) protruding into the gap between the seam and the lower mold 701 with a caliper. Moreover, the dimensions of the mold for burr measurement are as follows: the outer shape of the upper mold 700 and the lower mold 701 is (140 mm) × (140 mm), the diameter of the resin injection port is 7 mm at the top, 4 mm at the bottom, the diameter of the cavity is 30 mm, and the depth of the cavity The depth of the six slits 704 to 709 is 75 μm, 50 μm, 30 μm, 20 μm, 10 μm, and 2 μm in this order.

(Heat hardness)
The thermosetting resin composition was transfer molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds to produce a disk having a diameter of 50 mm and a thickness of 3 mm. Immediately after molding, the hardness of the disk was measured at 150 ° C. using a Shore D hardness tester.

(Bending strength)
A 10 mm × 70 mm × 3 mm test piece was produced by transfer molding the thermosetting resin composition under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. The bending strength of the test piece was measured at 25 ° C. using a bending tester (A & D Co., Ltd., product name “Tensilon”).

(Thermal conductivity)
The thermosetting resin composition was transfer molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds, thereby preparing a cylindrical test piece having a diameter of 50 mm and a thickness of 1 mm. The thermal conductivity of the test piece was measured at 25 ° C. by a xenon flash (Xe-flash) method.

(Light reflectance)
A test piece having a thickness of 3 mm was produced by transfer molding the thermosetting resin composition under conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. The initial light reflectance of the test piece at a wavelength of 460 nm was measured using a spectrocolorimeter (Konica Minolta Japan, Inc., product name “CM600d”). Subsequently, the light reflectance after heat-treating the test piece with a 150 degreeC hotplate for 1000 hours was measured.

In Tables 1 and 2, * 1 to 9 are as follows.
* 1: Trisglycidyl isocyanurate (product name “TEPIC-S” of Nissan Chemical Industries, Ltd., epoxy equivalent 100)
* 2: Hexahydrophthalic anhydride (Wako Pure Chemical Industries, Ltd.)
* 3: Tetrabutylphosphonium tetraphenylborate (product name of Nippon Chemical Industry Co., Ltd. “PX-4PB”)
* 4: Trimethoxyepoxysilane (product name “A-187” of Toray Dow Corning Co., Ltd.)
* 5: Silicone resin (silicone resin in which product names “OE-6366A” and “OE-6366B” manufactured by Toray Dow Corning Co., Ltd.) were mixed at a mass ratio of 1: 1.
* 6: Fused silica (Nippon Steel & Sumikin Co., Ltd. product name “S140”, center particle size 36 μm)
* 7: Titanium oxide (Ishihara Sangyo Co., Ltd. product name “CR-95”, center particle size 0.3 μm)
* 8: Hollow particles (Product name “S60-HS” of 3M Japan Co., Ltd., center particle size 24 μm)
* 9: Boron nitride (product name “FS-3” of Mizushima Alloy Iron Co., Ltd., center particle size 76 μm)

  It can be confirmed that the light-reflective thermosetting resin compositions of the examples have few burrs at the time of molding, and can form a cured product (molded product) excellent in mechanical properties and thermal conductivity. And since the fall of the light reflectivity after heat processing was suppressed, the molded object produced in the Example can confirm that it is excellent in heat-resistant discoloration and can improve durability.

  DESCRIPTION OF SYMBOLS 100 ... Optical semiconductor element, 101 ... Sealing resin, 102 ... Bonding wire, 103 ... Reflector, 103 '... Insulating resin molding, 104 ... Ni / Ag plating, 105 ... Metal wiring, 106 ... Phosphor, 107 ... Solder Bump, 110 ... Optical semiconductor element mounting substrate, 150 ... Resin inlet, 151 ... Mold, 200 ... Optical semiconductor element mounting area, 300 ... LED element, 301 ... Bonding wire, 302 ... Sealing resin, 303 ... Reflector, 304 ... lead, 305 ... phosphor, 306 ... die bond material, 400 ... copper-clad laminate, 401 ... substrate, 402 ... light reflecting resin layer, 403 ... copper foil, 404 ... sealing resin, 408 ... adhesive layer, 409 DESCRIPTION OF SYMBOLS Bonding wire 410 ... Optical semiconductor element, 500, 600 ... Optical semiconductor device, 601 ... Base material, 602 ... Conductive member, 603 ... Optical reaction Resin layer, 604 ... sealing resin, 608 ... adhesive layer, 609 ... bonding wire, 610 ... optical semiconductor element, 700 ... mold for burr measurement (upper mold), 701 ... mold for burr measurement (lower mold), 702 ... resin injection port, 703 ... cavity, 704 ... slit (75 µm), 705 ... slit (50 µm), 706 ... slit (30 µm), 707 ... slit (20 µm), 708 ... slit (10 µm), 709 ... slit (2 µm) 710: Resin burr.

Claims (8)

  A thermosetting resin composition for light reflection, comprising an epoxy resin, a curing agent, an inorganic filler, a white pigment, and boron nitride.   The thermosetting resin composition according to claim 1, wherein a content of the boron nitride is 20 to 500 parts by mass with respect to 100 parts by mass of the epoxy resin.   The thermosetting resin composition according to claim 1 or 2, wherein the white pigment contains at least one selected from the group consisting of titanium oxide, zinc oxide, alumina, magnesium oxide, antimony oxide, and zirconium oxide.   The board | substrate for optical semiconductor element mounting provided with the hardened | cured material of the thermosetting resin composition for light reflections as described in any one of Claims 1-3. It has a recess composed of a bottom surface and a wall surface, and the bottom surface of the recess is a mounting portion for an optical semiconductor element,
The optical semiconductor element mounting board | substrate which at least one part of the said wall surface of the said recessed part consists of hardened | cured material of the thermosetting resin composition for light reflections as described in any one of Claims 1-3. A board, and a first connection terminal and a second connection terminal provided on the board,
The optical semiconductor element mounting which has the hardened | cured material of the thermosetting resin composition for light reflections as described in any one of Claims 1-3 between the said 1st connection terminal and the said 2nd connection terminal. Substrate.   An optical semiconductor device comprising: the optical semiconductor element mounting substrate according to claim 4; and an optical semiconductor element mounted on the optical semiconductor element mounting substrate. A method of manufacturing a substrate for mounting an optical semiconductor element having a recess composed of a bottom surface and a wall surface,
Forming at least a part of the wall surface of the recess by transfer molding the thermosetting resin composition for light reflection according to any one of claims 1 to 3;
A method for manufacturing a substrate for mounting an optical semiconductor element.

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