JP2018534120A - 基板にナノ粒子のエアロゾル堆積を行うための装置及び方法 - Google Patents
基板にナノ粒子のエアロゾル堆積を行うための装置及び方法 Download PDFInfo
- Publication number
- JP2018534120A JP2018534120A JP2018504818A JP2018504818A JP2018534120A JP 2018534120 A JP2018534120 A JP 2018534120A JP 2018504818 A JP2018504818 A JP 2018504818A JP 2018504818 A JP2018504818 A JP 2018504818A JP 2018534120 A JP2018534120 A JP 2018534120A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- nanoparticles
- dielectric
- poly
- aerosol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 83
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 76
- 239000000443 aerosol Substances 0.000 title claims abstract description 64
- 230000008021 deposition Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 54
- 230000005686 electrostatic field Effects 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 53
- 239000002041 carbon nanotube Substances 0.000 claims description 36
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 36
- -1 polypropylene Polymers 0.000 claims description 30
- 229920000642 polymer Polymers 0.000 claims description 24
- 239000002109 single walled nanotube Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 229920006362 Teflon® Polymers 0.000 claims description 18
- 239000004809 Teflon Substances 0.000 claims description 17
- 229920001577 copolymer Polymers 0.000 claims description 17
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 12
- 229920002313 fluoropolymer Polymers 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 11
- 229920000299 Nylon 12 Polymers 0.000 claims description 10
- 229920002302 Nylon 6,6 Polymers 0.000 claims description 10
- 150000001336 alkenes Chemical class 0.000 claims description 10
- 230000005661 hydrophobic surface Effects 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 10
- 239000002071 nanotube Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000004811 fluoropolymer Substances 0.000 claims description 8
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 8
- 239000002074 nanoribbon Substances 0.000 claims description 7
- 239000004793 Polystyrene Substances 0.000 claims description 6
- 239000002060 nanoflake Substances 0.000 claims description 6
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 6
- 229920000515 polycarbonate Polymers 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 5
- JHWNWJKBPDFINM-UHFFFAOYSA-N Laurolactam Chemical compound O=C1CCCCCCCCCCCN1 JHWNWJKBPDFINM-UHFFFAOYSA-N 0.000 claims description 5
- 239000000020 Nitrocellulose Substances 0.000 claims description 5
- 239000004677 Nylon Substances 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000004743 Polypropylene Substances 0.000 claims description 5
- 229920001328 Polyvinylidene chloride Polymers 0.000 claims description 5
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 claims description 5
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 claims description 5
- 229920005549 butyl rubber Polymers 0.000 claims description 5
- 229920002301 cellulose acetate Polymers 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 239000004816 latex Substances 0.000 claims description 5
- 229920000126 latex Polymers 0.000 claims description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 5
- 239000002073 nanorod Substances 0.000 claims description 5
- 239000002077 nanosphere Substances 0.000 claims description 5
- 229920001220 nitrocellulos Polymers 0.000 claims description 5
- 229920001778 nylon Polymers 0.000 claims description 5
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 5
- 229920001084 poly(chloroprene) Polymers 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 229920002492 poly(sulfone) Polymers 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 229920001155 polypropylene Polymers 0.000 claims description 5
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 5
- 239000011118 polyvinyl acetate Substances 0.000 claims description 5
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 5
- 239000004800 polyvinyl chloride Substances 0.000 claims description 5
- 239000005033 polyvinylidene chloride Substances 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 5
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 230000005660 hydrophilic surface Effects 0.000 claims description 3
- NRNFFDZCBYOZJY-UHFFFAOYSA-N p-quinodimethane Chemical group C=C1C=CC(=C)C=C1 NRNFFDZCBYOZJY-UHFFFAOYSA-N 0.000 claims 3
- 239000001294 propane Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 description 27
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- 239000000976 ink Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000009472 formulation Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 239000012491 analyte Substances 0.000 description 2
- 239000011852 carbon nanoparticle Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229920001600 hydrophobic polymer Polymers 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012454 non-polar solvent Substances 0.000 description 2
- 229920006284 nylon film Polymers 0.000 description 2
- KHXKESCWFMPTFT-UHFFFAOYSA-N 1,1,1,2,2,3,3-heptafluoro-3-(1,2,2-trifluoroethenoxy)propane Chemical compound FC(F)=C(F)OC(F)(F)C(F)(F)C(F)(F)F KHXKESCWFMPTFT-UHFFFAOYSA-N 0.000 description 1
- KLQHHLUPURAZOV-UHFFFAOYSA-N 3,3,3-trifluoro-1-propoxyprop-1-ene Chemical compound C(CC)OC=CC(F)(F)F KLQHHLUPURAZOV-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000001856 aerosol method Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002238 carbon nanotube film Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920006301 statistical copolymer Polymers 0.000 description 1
- 238000009662 stress testing Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/035—Discharge apparatus, e.g. electrostatic spray guns characterised by gasless spraying, e.g. electrostatically assisted airless spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
- B05B12/082—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to a condition of the discharged jet or spray, e.g. to jet shape, spray pattern or droplet size
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
- B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/0255—Discharge apparatus, e.g. electrostatic spray guns spraying and depositing by electrostatic forces only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/08—Plant for applying liquids or other fluent materials to objects
- B05B5/10—Arrangements for supplying power, e.g. charging power
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/16—Arrangements for supplying liquids or other fluent material
- B05B5/1608—Arrangements for supplying liquids or other fluent material the liquid or other fluent material being electrically conductive
- B05B5/1616—Arrangements for supplying liquids or other fluent material the liquid or other fluent material being electrically conductive and the arrangement comprising means for insulating a grounded material source from high voltage applied to the material
- B05B5/165—Arrangements for supplying liquids or other fluent material the liquid or other fluent material being electrically conductive and the arrangement comprising means for insulating a grounded material source from high voltage applied to the material by dividing the material into discrete quantities, e.g. droplets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/007—Processes for applying liquids or other fluent materials using an electrostatic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/04—Processes for applying liquids or other fluent materials performed by spraying involving the use of an electrostatic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/04—Processes for applying liquids or other fluent materials performed by spraying involving the use of an electrostatic field
- B05D1/045—Processes for applying liquids or other fluent materials performed by spraying involving the use of an electrostatic field on non-conductive substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/02—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
- B05D7/04—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/159—Carbon nanotubes single-walled
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/06—Coating with compositions not containing macromolecular substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2601/00—Inorganic fillers
- B05D2601/20—Inorganic fillers used for non-pigmentation effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Electrostatic Spraying Apparatus (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
本出願は、2015年7月31日に出願されたカナダ国特許出願第2,899,255号の優先権を主張し、2015年7月31日に出願された米国特許仮出願第62/199,675号の利益を主張するものであり、両出願の全内容が、参照により本明細書に援用される。
本発明は、一般には、プリンタブルエレクトロニクスを対象とする。より詳細には、本発明は、基板にナノ粒子のエアロゾル堆積を行うための装置及び方法を対象とする。
従来の印刷方法及び機器を使用してプラスチックロール等の様々な表面に電気回路を印刷できることの低コスト及び柔軟性は、エレクトロニクスが使用される環境の可能性を拡大してきた。
本発明のある態様によると、基板にナノ粒子のエアロゾル堆積を行うための装置が提供される。本装置は、各ドロップレット(droplet)が限定された数のナノ粒子を含むミクロンサイズのドロップレットのエアロゾルを発生させるためのエアロゾル発生器と、エアロゾル発生器からエアロゾルを受けるための堆積チャンバとを含む。堆積チャンバは、エアロゾル中の個々のドロップレットを基板に引き付けるための静電界を有する。静電界は、基板に対して実質的に垂直である。
以下の説明は、単なる例としての例示的な実施形態に関するものであり、本発明を実施するために必要な特徴の組み合わせに限定されない。
Claims (78)
- ナノ粒子を基板に堆積させるための装置であって、
各ドロップレットが限定された数のナノ粒子を含むミクロンサイズのドロップレットのエアロゾルを発生させるためのエアロゾル発生器と、
前記エアロゾル発生器から前記ミクロンサイズのドロップレットを受けるための堆積チャンバとを備え、
前記堆積チャンバが、前記エアロゾル中のドロップレットを前記基板に引き付けるための静電界を含み、前記静電界が、前記基板に対して実質的に垂直である、装置。 - 堆積基板に対して平行又は直角である1個から数個の開口部を有する噴射ノズルをさらに備える、請求項1に記載の装置。
- 前記堆積チャンバが、前記エアロゾルの流れと前記基板との間に位置付けられたステンシルマスクをさらに備える、請求項1又は2に記載の装置。
- ミクロンサイズのドロップレットそれぞれが、ドロップレット1つ当たり5つ未満のナノ粒子を含む、請求項1〜3のいずれか一項に記載の装置。
- ミクロンサイズのドロップレットそれぞれが、ドロップレット1つ当たり1つのナノ粒子を含む、請求項4に記載の装置。
- 前記静電界が、離間した帯電板によって形成されており、前記基板が、接地した板上に位置付けられている、請求項1〜5のいずれか一項に記載の装置。
- 前記帯電板が、静電気を帯びた絶縁体又は電圧バイアスされた導体である、請求項6に記載の装置。
- 前記帯電板が、前記電界を空間的に調節し、前記基板の特定の場所におけるナノ粒子の堆積を促進するようにパターン形成されている、請求項6に記載の装置。
- 前記エアロゾルが層流状に流れ、前記基板の特定の場所におけるナノ粒子の堆積をもたらすように空間的に操作されている、請求項1に記載の装置。
- 前記基板が、少なくとも部分的に導電性の表面を有する、請求項1〜9のいずれか一項に記載の装置。
- 前記基板が、少なくとも部分的に誘電性の表面を有する、請求項1〜9のいずれか一項に記載の装置。
- 前記基板が、親水性又は疎水性の表面を有する、請求項10又は11に記載の装置。
- 前記基板が、80°以上の水接触角をもつ表面を有する、請求項10又は11に記載の装置。
- 前記水接触角が85°〜120°である、請求項13に記載の装置。
- 前記水接触角が約90°である、請求項14に記載の装置。
- 前記水接触角が117°〜120°である、請求項14に記載の装置。
- 前記表面がフッ素化ポリマーである、請求項13に記載の装置。
- 前記表面が、ポリ塩化ビニリデン、ポリフッ化ビニリデン、ポリヘキサメチレンアジパミド(ナイロン66)、ナイロン7、ポリ(ドデカノ−12−ラクタム)(ナイロン12)、ポリアミド、酢酸セルロース、ポリスルホン、ポリメチルメタクリレート、ポリ酢酸ビニル、ポリカーボネート、ポリスチレン、ポリプロピレン、ポリイミド、エポキシ、ポリエチレンテレフタレート、シリコーン、オレフィン(アルケン)、硝酸セルロース、超高分子量ポリエチレン、ポリクロロプレン、ポリ塩化ビニル、ラテックス、ブチルゴム、ポリテトラフルオロエチレン、及びポリ(p−キシリレン)からなる群から選択される、請求項13に記載の装置。
- 前記表面が、ポリ(4−ビニルフェノール)系誘電体又はポリテトラフルオロエチレン系誘電体である、請求項13に記載の装置。
- 前記表面が、ポリメチルシルセスキオキサンである、請求項13に記載の装置。
- 前記表面が、ポリテトラフルオロエテン、パーフルオロビニルプロピルエーテル−テトラフルオロエチレンコポリマー、テトラフルオロエテン−パーフルオロ(プロピルビニルエーテル)コポリマー、ポリ[テトラフルオロエチレン−co−パーフルオロ(アルキルビニルエーテル)]、テトラフルオロエチレン/パーフルオロ(プロピルビニルエーテル)コポリマー、ポリテトラフルオロエチレン−パーフルオロアルキルビニルエーテルコポリマー、ポリ(テトラフルオロエチレン−co−テトラフルオロ−エチレンパーフルオロプロピルエーテル)、テトラフルオロエテンとの1,1,1,2,2,3,3−ヘプタフルオロ−3−[(トリフルオロエテニル)オキシ]−プロパンポリマー、1,1,1,2,2,3,3−ヘプタフルオロ−3−[(トリフルオロビニル)オキシ]プロパン/テトラフルオロエチレンコポリマー、又はフッ素化ポリ(p−キシリレン)である、請求項13に記載の装置。
- 前記ナノ粒子が、窒化ホウ素、二硫化モリブデン、二硫化タングステン、炭素系又はリン系のナノ粒子である、請求項1〜21のいずれか一項に記載の装置。
- 前記炭素系ナノ粒子が、ナノチューブ、ナノロッド、ナノスフェア、ナノフレーク、又はナノリボンである、請求項22に記載の装置。
- 前記ナノ粒子が、単層カーボンナノチューブである、請求項1〜21のいずれか一項に記載の装置。
- ナノ粒子の薄膜の作製における、請求項1〜24のいずれか一項に記載の装置の使用。
- 薄膜トランジスタが作製される、請求項25に記載の使用。
- ダイオード、導電性電極、光起電力セル、物理センサ、又は化学センサの作製における、請求項1〜24のいずれか一項に記載の装置の使用。
- 前記導電性電極が透明電極又は不透明電極である、請求項27に記載の使用。
- 基板にナノ粒子を堆積させるための方法であって、
各ドロップレットが限定された数のナノ粒子を含むミクロンサイズのドロップレットのエアロゾルを発生させるステップと、
前記エアロゾルを、前記ミクロンサイズのドロップレットを基板に堆積させる静電界にさらすステップと
を含む、方法。 - 前記ミクロンサイズのドロップレットを前記基板に堆積させる前にマスクを通過させるステップをさらに含む、請求項29に記載の方法。
- ミクロンサイズのドロップレットそれぞれが、ドロップレット1つ当たり5つ未満のナノ粒子を含む、請求項29又は30に記載の方法。
- ミクロンサイズのドロップレットそれぞれが、単一のナノ粒子を含む、請求項31に記載の方法。
- 前記静電界が、離間した帯電板によって形成されており、前記基板が、接地した帯電板上に位置付けられている、請求項29〜31のいずれか一項に記載の方法。
- 前記帯電板が、静電気を帯びた絶縁体又は電圧バイアスされた導体である、請求項33に記載の方法。
- 前記帯電板が、前記電界を空間的に調節し、前記基板の特定の場所におけるナノ粒子の堆積を促進するようにパターン形成されている、請求項33に記載の方法。
- 前記エアロゾルが層流状に流れ、前記基板の特定の場所におけるナノ粒子の堆積をもたらすように空間的に操作されている、請求項29に記載の方法。
- 前記基板が、少なくとも部分的に導電性の表面を有する、請求項29〜36のいずれか一項に記載の方法。
- 前記基板が、少なくとも部分的に誘電性の表面を有する、請求項29〜36のいずれか一項に記載の方法。
- 前記基板が、親水性又は疎水性の表面を有する、請求項37又は38に記載の方法。
- 前記基板が、80°以上の水接触角をもつ表面を有する、請求項39に記載の方法。
- 前記水接触角が85°〜120°である、請求項40に記載の方法。
- 前記水接触角が約90°である、請求項41に記載の方法。
- 前記水接触角が117°〜120°である、請求項41に記載の方法。
- 前記表面がフッ素化ポリマーである、請求項40に記載の装置。
- 前記表面が、ポリ塩化ビニリデン、ポリフッ化ビニリデン、ポリヘキサメチレンアジパミド(ナイロン66)、ナイロン7、ポリ(ドデカノ−12−ラクタム)(ナイロン12)、ポリアミド、酢酸セルロース、ポリスルホン、ポリメチルメタクリレート、ポリ酢酸ビニル、ポリカーボネート、ポリスチレン、ポリプロピレン、ポリイミド、エポキシ、ポリエチレンテレフタレート、シリコーン、オレフィン(アルケン)、硝酸セルロース、超高分子量ポリエチレン、ポリクロロプレン、ポリ塩化ビニル、ラテックス、ブチルゴム、ポリテトラフルオロエチレン、及びポリ(p−キシリレン)からなる群から選択される、請求項40に記載の方法。
- 前記疎水性表面が、ポリ(4−ビニルフェノール)系誘電体又はポリテトラフルオロエチレン系誘電体である、請求項40に記載の方法。
- 前記表面が、ポリメチルシルセスキオキサンである、請求項40に記載の装置。
- 前記表面が、ポリテトラフルオロエテン、パーフルオロビニルプロピルエーテル−テトラフルオロエチレンコポリマー、テトラフルオロエテン−パーフルオロ(プロピルビニルエーテル)コポリマー、ポリ[テトラフルオロエチレン−co−パーフルオロ(アルキルビニルエーテル)]、テトラフルオロエチレン/パーフルオロ(プロピルビニルエーテル)コポリマー、ポリテトラフルオロエチレン−パーフルオロアルキルビニルエーテルコポリマー、ポリ(テトラフルオロエチレン−co−テトラフルオロ−エチレンパーフルオロプロピルエーテル)、テトラフルオロエテンとの1,1,1,2,2,3,3−ヘプタフルオロ−3−[(トリフルオロエテニル)オキシ]−プロパンポリマー、1,1,1,2,2,3,3−ヘプタフルオロ−3−[(トリフルオロビニル)オキシ]プロパン/テトラフルオロエチレンコポリマー、又はフッ素化ポリ(p−キシリレン)である、請求項40に記載の装置。
- 前記ナノ粒子が、窒化ホウ素、二硫化モリブデン、二硫化タングステン、炭素系又はリン系のナノ粒子である、請求項29〜48のいずれか一項に記載の方法。
- 前記炭素系ナノ粒子が、ナノチューブ、ナノロッド、ナノスフェア、ナノフレーク、又はナノリボンである、請求項49に記載の方法。
- 前記ナノ粒子が、単層カーボンナノチューブである、請求項29〜48のいずれか一項に記載の方法。
- 80°以上の水接触角をもつ表面と、前記表面に接着した少なくとも1つのナノ粒子とを備える材料。
- 前記水接触角が85°〜120°である、請求項52に記載の材料。
- 前記水接触角が約90°である、請求項53に記載の材料。
- 前記水接触角が117°〜120°である、請求項53に記載の材料。
- 前記ナノ粒子が、窒化ホウ素、二硫化モリブデン、二硫化タングステン、炭素系又はリン系のナノ粒子である、請求項52〜55のいずれか一項に記載の材料。
- 前記炭素系ナノ粒子が、ナノチューブ、ナノロッド、ナノスフェア、ナノフレーク、又はナノリボンである、請求項56に記載の材料。
- 前記ナノ粒子が、単層カーボンナノチューブである、請求項52〜55のいずれか一項に記載の材料。
- 複数のカーボンナノチューブがネットワーク状に形成されている、請求項52に記載の材料。
- 前記カーボンナノチューブネットワークが、トランジスタのチャネルである、請求項59に記載の材料。
- 前記カーボンナノチューブが、単層カーボンナノチューブである、請求項59又は60に記載の材料。
- 前記表面が、ポリ塩化ビニリデン、ポリフッ化ビニリデン、ポリヘキサメチレンアジパミド(ナイロン66)、ナイロン7、ポリ(ドデカノ−12−ラクタム)(ナイロン12)、ポリアミド、酢酸セルロース、ポリスルホン、ポリメチルメタクリレート、ポリ酢酸ビニル、ポリカーボネート、ポリスチレン、ポリプロピレン、ポリイミド、エポキシ、ポリエチレンテレフタレート、シリコーン、オレフィン(アルケン)、硝酸セルロース、超高分子量ポリエチレン、ポリクロロプレン、ポリ塩化ビニル、ラテックス、ブチルゴム、ポリテトラフルオロエチレン、及びポリ(p−キシリレン)からなる群から選択される、請求項52に記載の材料。
- 前記表面が、ポリ(4−ビニルフェノール)系誘電体又はポリテトラフルオロエチレン系誘電体である、請求項52〜61のいずれか一項に記載の材料。
- 前記ポリ(4−ビニルフェノール)系誘電体が、ゼロックス(商標)ダイエレクトリックxdi−d1.2である、請求項63に記載の材料。
- 前記ポリテトラフルオロエチレン系誘電体が、テフロン(登録商標)AFである、請求項63に記載の材料。
- 前記表面が、フルオロポリマーである、請求項52〜61のいずれか一項に記載の材料。
- 前記フルオロポリマーが、無定形(非晶質)フルオロポリマーのサイトップである、請求項66に記載の材料。
- ナノチューブの薄膜における使用のための、請求項52〜67のいずれか一項に記載の材料。
- 前記ナノチューブの薄膜が、薄膜トランジスタの半導体チャネルである、請求項68に記載の材料。
- ダイオード、導電性電極、光起電力セル、物理センサ、又は化学センサにおける使用のための、請求項52〜69のいずれか一項に記載の材料。
- 前記導電性電極が透明電極又は不透明電極である、請求項70に記載の材料。
- 請求項1〜24のいずれか一項に記載の装置を備えるロールツーロール印刷システム。
- ボトムゲート型トランジスタのゲート誘電体としての使用のための、請求項1〜24のいずれか一項に記載の装置によってカーボンナノチューブが堆積されているポリマーを含む、材料。
- ボトムゲート型トランジスタの誘電体としての使用のための、ポリマー及びカーボンナノチューブを含む材料であって、前記ポリマー及びカーボンナノチューブが請求項1〜24のいずれか一項に記載の装置によって基板に堆積されており、前記カーボンナノチューブが前記ポリマー上に位置付けられている、材料。
- 前記ポリマーが前記カーボンナノチューブ上に位置付けられている、トップゲート型トランジスタの誘電体又は封入層としての使用のための、請求項74に記載の材料。
- 前記ポリマー及びカーボンナノチューブネットワークが、請求項1〜24のいずれか一項に記載の装置によって前記基板に同時に堆積されている、請求項73〜75のいずれか一項に記載の材料。
- 封入層を有しない曝気型トランジスタのゲート誘電体としての使用のための、請求項1〜24のいずれか一項に記載の装置によってカーボンナノチューブネットワークが堆積されているポリマーを含む、材料。
- 0〜1MV/mの印加ゲート電界からのヒステリシスなしの伝達特性を有する、請求項74に記載の材料。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562199675P | 2015-07-31 | 2015-07-31 | |
CA2,899,255 | 2015-07-31 | ||
CA2899255A CA2899255A1 (en) | 2015-07-31 | 2015-07-31 | Apparatus and method for aerosol deposition of nanoparticles on a substrate |
US62/199,675 | 2015-07-31 | ||
PCT/IB2016/053502 WO2017021794A1 (en) | 2015-07-31 | 2016-06-14 | Apparatus and method for aerosol deposition of nanoparticles on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018534120A true JP2018534120A (ja) | 2018-11-22 |
JP2018534120A5 JP2018534120A5 (ja) | 2019-07-18 |
Family
ID=57937673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018504818A Pending JP2018534120A (ja) | 2015-07-31 | 2016-06-14 | 基板にナノ粒子のエアロゾル堆積を行うための装置及び方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190001360A1 (ja) |
EP (1) | EP3328921A4 (ja) |
JP (1) | JP2018534120A (ja) |
KR (1) | KR20180040599A (ja) |
CN (1) | CN108026304A (ja) |
CA (2) | CA2899255A1 (ja) |
TW (1) | TW201718738A (ja) |
WO (1) | WO2017021794A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102023106B1 (ko) * | 2017-02-20 | 2019-09-20 | 광운대학교 산학협력단 | 용액 공정 기반 고품질 질화 붕소 박막 제조 및 소자 적용 방법 |
CN112570217A (zh) * | 2019-09-27 | 2021-03-30 | 深圳市向宇龙自动化设备有限公司 | 一种多功能快速点胶系统 |
US11530479B2 (en) | 2019-10-18 | 2022-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Atomic layer deposition tool and method |
KR102278712B1 (ko) * | 2019-10-28 | 2021-07-16 | 광운대학교 산학협력단 | 실온에서 에어로졸 증착에 의한 페로브스카이트-유도 초민감도와 고안정 습도 센서 시스템 |
GB2598964A (en) * | 2020-09-22 | 2022-03-23 | Brian King Andrew | Methods and apparatus for inducing chemical reactions using electro-statics |
CN113478809B (zh) * | 2021-07-06 | 2023-05-30 | 上海科技大学 | 微纳结构的增材制造方法 |
CN113387357A (zh) * | 2021-07-22 | 2021-09-14 | 江西理工大学 | 一种MXene褶皱纳米球的制备方法 |
CN113941462A (zh) * | 2021-11-17 | 2022-01-18 | 秦皇岛泰治医疗科技有限公司 | 一种用于口罩生产光触媒喷涂设备 |
CN114054293A (zh) * | 2021-11-17 | 2022-02-18 | 珠海格力智能装备有限公司 | 一种基于嵌入式的喷胶控制系统及其使用方法 |
CN114602747A (zh) * | 2022-04-12 | 2022-06-10 | 吉水县伟兵信息科技有限公司 | 一种装修用瓷砖涂胶装置 |
KR102612286B1 (ko) * | 2022-04-22 | 2023-12-12 | 한국과학기술원 | 정전분무 노즐 필름 |
CN115488003A (zh) * | 2022-09-27 | 2022-12-20 | 康佳集团股份有限公司 | 一种工件喷胶装置 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06106096A (ja) * | 1992-09-29 | 1994-04-19 | Tokyo Ohka Kogyo Co Ltd | 静電塗装装置 |
JP2004160388A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 薄膜の作成方法と作成装置 |
US20050123687A1 (en) * | 2003-11-04 | 2005-06-09 | Jacobs Heiko O. | Method and apparatus for depositing charge and/or nanoparticles |
JP2006142159A (ja) * | 2004-11-17 | 2006-06-08 | Kawasaki Heavy Ind Ltd | 微粒子分散複合薄膜形成方法および形成装置 |
JP2008043944A (ja) * | 2006-07-21 | 2008-02-28 | Matsushita Electric Ind Co Ltd | 微粒子の製造方法及び装置 |
JP2008529772A (ja) * | 2005-02-14 | 2008-08-07 | ザ ユニバーシティ オブ ノッティンガム | 重合膜の堆積 |
JP2011100879A (ja) * | 2009-11-06 | 2011-05-19 | National Institute Of Advanced Industrial Science & Technology | 化合物半導体薄膜及びその製造方法、並びに太陽電池 |
EP2676739A1 (en) * | 2012-06-20 | 2013-12-25 | The Boeing Company | Methods of coating substrates with electrically charged conductive materials and electrically conductive coated substrates |
JP2014063849A (ja) * | 2012-09-20 | 2014-04-10 | Mitsubishi Chemicals Corp | 有機半導体素子及びその製造方法、並びに薄膜の製造方法 |
JP2015502834A (ja) * | 2011-10-12 | 2015-01-29 | 1366 テクノロジーズ インク. | 基体上にレジストの薄層を堆積させる装置およびプロセス |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064295A (en) * | 1973-11-06 | 1977-12-20 | National Research Development Corporation | Spraying atomized particles |
US20040101619A1 (en) * | 2000-03-30 | 2004-05-27 | Carlo Camorani | Object decoration |
CN1293649C (zh) * | 2004-01-08 | 2007-01-03 | 西安交通大学 | 一种用于场发射显示器阴极的大面积碳纳米管薄膜制备方法 |
US20060280866A1 (en) * | 2004-10-13 | 2006-12-14 | Optomec Design Company | Method and apparatus for mesoscale deposition of biological materials and biomaterials |
US7674671B2 (en) * | 2004-12-13 | 2010-03-09 | Optomec Design Company | Aerodynamic jetting of aerosolized fluids for fabrication of passive structures |
EP2106903A1 (de) * | 2008-02-22 | 2009-10-07 | Hermes Schleifkörper GmbH | Verfahren zum Aufstreuen abriebhemmender Werkstoffe und Vorrichtung hierzu |
KR101214044B1 (ko) * | 2010-11-22 | 2012-12-20 | 한국세라믹기술원 | 전계방출용 cnt-금속 혼합막 제조 방법 |
DE102012113124A1 (de) * | 2012-12-27 | 2014-07-03 | Ev Group E. Thallner Gmbh | Sprühdüseneinrichtung und Verfahren zum Beschichten |
TW201509524A (zh) * | 2013-07-05 | 2015-03-16 | Nitto Denko Corp | 光觸媒片材 |
FI125920B (en) * | 2013-09-09 | 2016-04-15 | Beneq Oy | A method of coating a substrate |
FI20135903L (fi) * | 2013-09-09 | 2015-03-10 | Beneq Oy | Laite ja menetelmä aerosolin valmistamiseksi ja kohdistinosa |
US8940562B1 (en) * | 2014-06-02 | 2015-01-27 | Atom Nanoelectronics, Inc | Fully-printed carbon nanotube thin film transistor backplanes for active matrix organic light emitting devices and liquid crystal displays |
EP3374088B1 (en) * | 2015-11-12 | 2022-01-05 | Cornell University | Alternating current electrospray manufacturing |
-
2015
- 2015-07-31 CA CA2899255A patent/CA2899255A1/en not_active Abandoned
-
2016
- 2016-06-14 WO PCT/IB2016/053502 patent/WO2017021794A1/en active Application Filing
- 2016-06-14 EP EP16832379.8A patent/EP3328921A4/en not_active Withdrawn
- 2016-06-14 CA CA2994365A patent/CA2994365A1/en not_active Abandoned
- 2016-06-14 JP JP2018504818A patent/JP2018534120A/ja active Pending
- 2016-06-14 KR KR1020187006016A patent/KR20180040599A/ko not_active Application Discontinuation
- 2016-06-14 US US15/748,947 patent/US20190001360A1/en not_active Abandoned
- 2016-06-14 CN CN201680053463.1A patent/CN108026304A/zh active Pending
- 2016-06-30 TW TW105120670A patent/TW201718738A/zh unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06106096A (ja) * | 1992-09-29 | 1994-04-19 | Tokyo Ohka Kogyo Co Ltd | 静電塗装装置 |
JP2004160388A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 薄膜の作成方法と作成装置 |
US20050123687A1 (en) * | 2003-11-04 | 2005-06-09 | Jacobs Heiko O. | Method and apparatus for depositing charge and/or nanoparticles |
JP2006142159A (ja) * | 2004-11-17 | 2006-06-08 | Kawasaki Heavy Ind Ltd | 微粒子分散複合薄膜形成方法および形成装置 |
JP2008529772A (ja) * | 2005-02-14 | 2008-08-07 | ザ ユニバーシティ オブ ノッティンガム | 重合膜の堆積 |
JP2008043944A (ja) * | 2006-07-21 | 2008-02-28 | Matsushita Electric Ind Co Ltd | 微粒子の製造方法及び装置 |
JP2011100879A (ja) * | 2009-11-06 | 2011-05-19 | National Institute Of Advanced Industrial Science & Technology | 化合物半導体薄膜及びその製造方法、並びに太陽電池 |
JP2015502834A (ja) * | 2011-10-12 | 2015-01-29 | 1366 テクノロジーズ インク. | 基体上にレジストの薄層を堆積させる装置およびプロセス |
EP2676739A1 (en) * | 2012-06-20 | 2013-12-25 | The Boeing Company | Methods of coating substrates with electrically charged conductive materials and electrically conductive coated substrates |
JP2014063849A (ja) * | 2012-09-20 | 2014-04-10 | Mitsubishi Chemicals Corp | 有機半導体素子及びその製造方法、並びに薄膜の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108026304A (zh) | 2018-05-11 |
WO2017021794A1 (en) | 2017-02-09 |
KR20180040599A (ko) | 2018-04-20 |
EP3328921A1 (en) | 2018-06-06 |
TW201718738A (zh) | 2017-06-01 |
EP3328921A4 (en) | 2019-08-21 |
CA2994365A1 (en) | 2017-02-09 |
US20190001360A1 (en) | 2019-01-03 |
CA2899255A1 (en) | 2017-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2018534120A (ja) | 基板にナノ粒子のエアロゾル堆積を行うための装置及び方法 | |
US8389346B2 (en) | Method and structure for establishing contacts in thin film transistor devices | |
Kwon et al. | Overview of recent progress in electrohydrodynamic jet printing in practical printed electronics: Focus on the variety of printable materials for each component | |
US8211782B2 (en) | Printed material constrained by well structures | |
Li et al. | Direct writing of silver nanowire electrodes via dragging mode electrohydrodynamic jet printing for organic thin film transistors | |
CN105097428B (zh) | 碳纳米管复合膜 | |
Can et al. | Patterning of high-viscosity silver paste by an electrohydrodynamic-jet printer for use in TFT applications | |
CN105097939B (zh) | 薄膜晶体管 | |
US20180175297A1 (en) | Screen Printing Systems and Techniques for Creating Thin-Film Transistors Using Separated Carbon Nanotubes | |
Li et al. | Electrohydrodynamic (EHD) jet printing of carbon-black composites for solution-processed organic field-effect transistors | |
CN105097429B (zh) | 碳纳米管复合膜的制备方法 | |
Li et al. | Facile method for enhancing conductivity of printed carbon nanotubes electrode via simple rinsing process | |
Fukuda et al. | Influence of spray conditions on droplet charge per unit volume for electrospray deposition | |
JP2010093092A (ja) | ボトムゲート型有機薄膜トランジスタ及びその製造方法 | |
Jeong et al. | Performance improvement of organic thin film transistors with carbon nanotube/metal hybrid electrodes for S/D contacts | |
Park et al. | Massive Fabrication of Carbon Nanotube Transistors by Surface Tension-Driven Inkjet-Printing Method | |
Hassan et al. | Effect of channel length on single walled carbon nanotubes thin film characteristics deposited via spray coating technique | |
Tobjörk | Printed low-voltage organic transistors on plastics and paper | |
KR20190123846A (ko) | 용액 공정 기반의 박막 트랜지스터의 성능을 향상시키는 선택적인 표면 처리를 이용한 패터닝 방법 | |
MAHATO | Assessment of semi-conducting carbon nanotube networks for fully printed field effect transistors | |
Mishra | Fabrication of All Aerosol Jet Printed Flexible Carbon Nanotube (CNT) Transistor and Its Application | |
Pham et al. | Bending tests of carbon nanotube thin-film transistors on flexible substrate | |
Kuai | Feasibility of solution processed organic field-effect transistors | |
Moon | Development of inkjet printing technology for fully solution process dedicated to organic electronic circuits | |
Rodrigues | Towards printed carbon nanotube transistors on paper substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180316 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190613 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190613 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20190918 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200421 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200526 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200824 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210202 |