JP2018533719A - Device for generating a vapor-containing gas atmosphere, and system components comprising such a device - Google Patents

Abstract

Device (1) for generating a vapor-containing gas atmosphere in the outer wall (2.1) and / or the inner wall (2.2) of the melt conduction channel (2) or in the space within the plant component (A) A container (1.1) for containing a liquid (F) and a carrier gas (G), the carrier gas (G) being mixed with the vapor of the liquid (F) to form a vapor / gas mixture ( A vapor space (D) producing DGG) is formed in the vessel (1.1) and the vapor / gas mixture (DGG) along the outer wall (2.1) and / or the inner wall (2.2) or plant It is characterized in that it has at least one distribution conduit (1.9) for distribution in the space of the component (A).
[Selected figure] Figure 1

Description

  The present invention relates to an apparatus for generating a vapor-containing gas atmosphere. The invention further relates to a plant component comprising at least one such device.

  In a plant for the conditioning of inorganic non-metallic melts, for example glass, and for molding, the walls of the melt conduction plant components are manufactured and produced from noble metals, in particular platinum or platinum alloys, There is a particularly high demand, for example, on the purity, optical quality and homogeneity of the glass.

  At temperatures of the inorganic non-metallic melt in the range of 1000 ° C. to 1700 ° C., the water present in the melt is partially dissociated. For example, free hydrogen ions can cross out through the wall of the plant component, here platinum wall, so that the oxygen remains on the inner wall of the plant component.

  This can lead to the generation of oxygen bubbles which are difficult or impossible to remove after purification of the melt. Such oxygen bubbles can impair the quality of the product or render the product unusable.

  For example, the melt conduction plant component is usually configured as a channel with a circular, oval or rectangular cross-section, pure as is known in the case of feeder spouts, with changes in diameter and further shape deviations. Modifications of the cylindrical structure are possible.

  The noble metal-containing outer wall of the melt conduction channel of the plant component is surrounded by the refractory material. This serves both for thermal insulation and mechanical support for the outer wall of the melt conduction channel.

  Various possibilities for solving the above-mentioned problems of the formation of oxygen bubbles on the inner wall of the melt conduction channel are known from the prior art. In particular, the two basic solutions to date known to date have either a double-walled structure that supplies hydrogen or water vapor to the noble metal-containing outer wall of the melt conduction channel, or a barrier layer that avoids hydrogen diffusion. There is a route. Furthermore, the electrochemical effects of bubble formation are also conceivable.

  WO 98/018731, DE 69 730 350 and U.S. Pat. No. 5,785,726 pass the wall of a platinum tube by applying a hydrogen atmosphere to the outer wall or the melt conduction channel of the platinum tube. Hydrogen diffusion is prevented. For example, this is achieved by supplying steam to the outer wall of the platinum tube, taking into account the partial pressure of the steam on the inner wall of the platinum tube. A housing is provided to achieve a sufficiently high partial pressure of hydrogen at the outer wall.

  WO 02/44115 describes a coated metal part for glass production with a hydrogen impermeable layer on the side opposite to the glass melt.

  In the method of glass production described in DE-A 10 2004 0155 77, the molten glass is at least partially surrounded by noble metal walls or refractory metal walls, in the region close to the glass melt / metal wall interface By controlling the partial pressure of oxygen in the molten glass, the formation of oxygen bubbles is avoided by measuring the partial pressure of oxygen and arranging at least one sensor to adjust the partial pressure of oxygen. In particular, an oxygen partial pressure range in which no O 2 bubbles, N 2, CO 2 and / or SO 2 bubbles and / or alloy damage occur in the metal wall is determined, the oxygen partial pressure being by the electrode arranged on the metal wall or vice versa It is set in this range by the application of a voltage and / or by flushing with pure or diluted forms of hydrogen, steam or oxygen.

  The object of the present invention is to provide an improved apparatus for generating a vapor-containing gas atmosphere at the outer and / or inner wall of the melt conduction channel or in the space of the plant components as compared to the prior art. It is. A further object of the present invention is to provide a plant component comprising such an apparatus.

  With respect to this device, this object is achieved according to the invention by the features indicated in claim 1. With regard to plant components, this object is achieved according to the invention by the features indicated in claim 6.

  Advantageous embodiments of the invention are described in the dependent claims.

  The device according to the invention for generating a vapor-containing gas atmosphere in the outer and / or inner wall of the melt conduction channel or in the space of the plant component comprises a container for containing liquid and preferably non-oxidizing carrier gas including. A vapor space is formed in the vessel where the carrier gas mixes with the liquid vapor to form a vapor / gas mixture. The apparatus further comprises a distribution conduit for distributing the steam / gas mixture along the outer and / or inner wall or into the space of the plant component.

  The device makes it possible, in a simple manner, to achieve a uniform distribution of the steam / gas mixture over the entire circumference of the outer wall and / or the inner wall or the space of the plant components, thus producing a uniform vapor-containing gas atmosphere, In particular, the diffusion of hydrogen ions dissociated from the melt through the outer wall is prevented or at least reduced by the formation of the vapor-containing gas atmosphere at the outer wall containing the dilute melt and the formation of oxygen bubbles at the inner wall of the melt conduction channel It is significantly reduced. Thus, the product produced from the melt has an optimum quality.

  In one embodiment of the invention, carrier gas may be supplied from the gas storage container via the gas supply conduit to the vapor space of the container. As a carrier gas, it is preferable to use a nonoxidizing noble gas or nitrogen.

  Liquid can be introduced into the container from the liquid container via the liquid supply conduit until the predetermined level is reached. The liquid is preferably carried by a pump having a low power.

  The vapor space in which the liquid vapor and the carrier gas mix is advantageously formed above the level. Thus, the formation of the vapor space of optimum dimensions depends on the predetermined level.

  In order to allow the steam / gas mixture to exit the distribution conduit, the distribution conduit has a plurality of openings made in the wall of the distribution conduit. For example, the openings are arranged at a distance of 10 mm to 60 mm, preferably 20 mm to 40 mm. For example, the individual openings each have a diameter of 2 mm to 5 mm. Thus, a very uniform outflow of the vapor / gas mixture from the distribution conduit is possible.

  The envisaged use of this device is in a plant component comprising at least one melt conduction channel having an outer wall and an inner wall facing the melt and at least one device according to the invention.

  For example, the plant component is for producing glass, and by incorporating at least one device according to the invention into the plant component, the glass produced with respect to the reduction or avoidance of oxygen bubbles in the glass is substantially improved Be done.

  In one embodiment of the present invention, the outer wall of the melt conduction channel is provided with a noble metal layer, and the inner wall of the melt conduction channel is provided with a refractory material. In particular, platinum or a platinum alloy is used to form the noble metal layer.

  Gas permeable, made of porous and / or textile material, so as to allow the vapor / gas mixture to pass through the outer wall, in order to avoid direct contact between the distribution conduit and the outer wall of the melt conduction channel A separation layer is installed.

  In the case of a horizontal melt conduction channel, the distribution conduit extends parallel to the outer wall in the direction of the longitudinal extension of the melt conduction channel, and the arrangement of the one or more distribution conduits on one side produces the vapor-containing gas atmosphere It is satisfactory to a specific channel diameter. For larger channel diameters, one or more distribution conduits are arranged on two sides parallel to the longitudinal extension of the melt conduction channel.

  If the melt conduction channel or a part of the melt conduction channel extends vertically, the distribution conduit is at least partially arranged circumferentially of the outer wall of the melt conduction channel. This can be achieved by means of an annular distribution conduit or by means of two arc-shaped distribution conduits.

  Furthermore, a flow guiding flange is provided which defines the melt conducting channel at the end face. The flow directing flange serves to prevent the steam / gas mixture from flowing out of the area close to the outer wall in an outward direction.

  In order to thermally insulate the melt conduction channel from the outside, this channel is surrounded by a thermal insulation formed by at least the inner thermal insulation and the outer thermal insulation. The thermal insulation together with the flow guiding flange has the same effect as the housing around the melt conduction channel.

  The container of the device is here at least partially arranged in the outer insulation such that the container into which the liquid is introduced and the vapor / gas mixture is generated is at least partially insulated. In this way, the temperature of the liquid in the container, and the resulting proportion of vapor in the vapor / gas mixture, can be influenced as a function of the position of the container in the outer insulation.

  Furthermore, in one embodiment of the invention, in each case a gap is present between the end of the flow guiding flange facing the melt conduction channel and the inner insulation. This gap makes it possible to create a steam-containing gas atmosphere on the inner wall in the area of the flow-introducing flange, so that a distribution of steam / gas mixture is also possible here.

  Embodiments of the invention will be described in more detail below with the aid of the drawings.

FIG. 7 illustrates an example of an apparatus for producing a vapor-containing gas atmosphere at the outer wall of a melt conduction channel of a plant component. FIG. 6 shows a portion of the supply and distribution conduits of the apparatus and the melt conduction channels of the plant components. FIG. 6 shows an example of a plant component having a melt conduction channel and a plurality of devices. FIG. 7 shows details of plant components in an alternative embodiment in which the distribution and supply conduits of the device are arranged at an angle different from 90 ° with respect to each other. FIG. 7 shows a portion of the distribution and supply conduits of the device arranged at an angle different from 90 ° to one another. FIG. 4 shows the details of the annular distribution conduit; FIG. 6 shows a detail of an embodiment of a plant component having a portion of a melt conduction channel having two flow directing flanges and one device. FIG. 7 shows a detail of a further embodiment of a plant component having a portion of a melt conduction channel having two flow directing flanges and one device. FIG. 4 is a cross-sectional view of a plant component embodiment of the plant component shown in FIG. 3; FIG. 5 is a cross-sectional view of a detail of a melt conduction channel having a separation layer and a distribution conduit.

  In all the figures, corresponding parts are given the same reference numerals.

  FIG. 1 schematically shows an embodiment of the device 1 for generating a gas-containing gas atmosphere at the outer wall 2.1 of the melt conduction channel 2 in the plant component A, which is shown by way of example in FIG.

  For example, the device 1 comprises a container 1.1 having a hollow cylindrical shape and thus having a circular cross-sectional profile. The container 1.1 may alternatively also have other suitable cross-sectional profiles.

  The container 1.1 is made of a corrosion resistant material, preferably stainless steel, and is intended to contain the water-containing liquid F and the nonoxidizing carrier gas G.

  Liquid F is introduced into the container 1.1 via a liquid supply conduit 1.2 which is open at one side to the container 1.1 and connected to a liquid container 1.3 in which a predetermined amount of liquid F is present. . The liquid F is pumped into the container 1.1 by means of a pump 1.4 arranged in the liquid supply conduit 1.2. The pump 1.4 can be controlled electrically and / or mechanically under open loop and / or closed loop control, so that the liquid F is introduced into the vessel 1.1 until it reaches the predetermined level P Be done.

  The level P is defined by the 20% to 70% free height in the container 1.1, so that on the one hand the lowest value for the continuous supply of steam, for example steam, with a sufficient amount of liquid F It does not go below, so on the other hand the maximum amount of liquid F does not exceed the level P so that a vapor space D with an optimal volume can be formed. Instead of steam, other steam or steam mixtures can also be used. However, in the case of plant component A for glass production, it is advantageous to use steam to avoid the formation of oxygen bubbles.

  In order to introduce the carrier gas G into the vapor space D, in the present example a gas supply conduit 1.5 is provided which projects concentrically in the container 1.1, the open end of the gas supply conduit 1.5 being a vapor It opens into the space D and projects 20 mm beyond a predetermined height or length, for example the maximum predetermined level P.

  Outside the container 1.1, the gas supply conduit 1.5 is connected to a gas storage container 1.6 in which a defined amount of carrier gas G is accommodated. The setting of the desired gas flow through the gas supply conduit 1.5 is performed by means of a closed loop controllable and fine adjustable gas supply 1.7 arranged in the gas supply conduit 1.5. The flow of the carrier gas G is directly controlled by a flow controller disposed at the gas supply source 1.7. As carrier gas G, it is possible to use noble gases, nitrogen or other non-oxidizing, non-combustible and non-toxic gases, or mixtures thereof.

  The volumetric flow rate of the carrier gas G is preferably less than 300 l / h, more preferably less than 100 l / h at a temperature of 20 ° C. and atmospheric pressure, and at the same time of the liquid transported to the vessel 1.1 by the pump 1.4. The amount is set to less than 0.25 l / h under otherwise identical temperature and pressure conditions. These indicated values depend on the size of the surface of the outer wall 2.1 to be wetted and the sealing effect of the insulation 3 and are respectively associated with one device 1. When increasing the volumetric flow out of the pump 1.4, it may be advantageous to raise the temperature of the liquid in the vessel 1.1. This can be achieved by adjusting the position of the device 1 in the area of the outer insulation 3.1.

  The carrier gas G enters the vapor space D where it mixes with the vapor formed by the heating of the liquid F, this vapor being indirectly controlled via the amount of liquid introduced into the vessel 1.1 . The mixture forms a vapor / gas mixture DGG, the percentage of vapor content first being, according to the amount of carrier gas G flowing, then the liquid F supplied by the pump 1.4, and in the container 1.1 It is determined by the temperature of the liquid F.

  The thus formed vapor / gas mixture DGG is supplied via the supply conduit 1.8 located above the vapor space D to the distribution conduit 1.9 shown in FIG. 2 and via the supply conduit 1.8. The supply of the vapor / gas mixture DGG is closed-loop controlled by the introduction of the carrier gas G into the vapor space D.

  At least a part of the distribution conduit 1.9 and the supply conduit 1.8 is made of a material with high temperature resistance and corrosion resistance, due to the temperature prevailing in the melt conduction channel 2. In this case, platinum alloys having a correspondingly suitable creep strength are particularly suitable. For example, the inner diameter of the supply conduit 1.8 and the distribution conduit 1.9 is less than 6 mm, preferably less than 4 mm.

  FIG. 2 schematically shows the supply conduit 1.8 and the distribution conduit 1.9 of the device 1 and part of the melt conduction channel 2 of the plant component A.

  In the present example, the supply conduit 1.8 extends vertically in the distribution conduit 1.9, which extends parallel to the outer wall 2.1 in the longitudinal direction of the melt conduction channel 2 and extends over the length of the cross section shown, The length of conduit 1.9 corresponds to the length of the cross section. For example, in particular, a length of 1 meter is defined as the maximum length of the distribution conduit 1.9. If the cross section is longer than the predetermined length, a plurality of distribution conduits 1.9 which are parts of the device 1 are installed, as a result of which a plurality of devices 1 are installed, as shown by way of example in FIG.

  The distribution conduit 1.9 is regularly spaced along its entire length and is made in the wall of the distribution conduit 1.9 in the area facing the outer wall 2.1 of the melt conduction channel 2 such that the vapor / gas mixture DGG is It has an opening (not shown in detail) through which it can exit to form a vapor-containing gas atmosphere along the outer wall 2.1. For example, the openings are arranged at a distance of 10 mm to 60 mm, preferably 20 mm to 40 mm, from one another. The distance between the openings can be larger the closer to the opening of the supply conduit 1.8 to the distribution conduit 1.9. For example, the individual openings each have a diameter of 2 mm to 5 mm.

  The vapor / gas mixture DGG leaves the opening as a laminar flow, preferably uniformly distributed over the circumference of the outer wall 2.1, thus producing a gas-containing vapor atmosphere in the outer wall 2.1. If the outer wall 2.1 has beads, these beads aid the distribution of the steam / gas mixture DGG in the outer wall 2.1.

  The vapor-containing gas atmosphere generated along the outer wall 2.1 makes it possible to avoid or at least reduce the formation of oxygen bubbles in the inner wall 2.2 of the melt conduction channel 2, which wall is a refractory material Facing the melt, for example a glass melt. For example, the temperature of the melt is in the range of 1200 ° C. to 1700 ° C., or even higher, and as mentioned above, the hydrogen ions are present in dissociated form and the metal layer, in particular a layer of platinum or platinum alloy It can diffuse through the provided outer wall 2.1. The oxygen from the water present in the melt remains on the inner wall 2.2 where it forms undesirable bubbles.

  Out-diffusion of dissociated hydrogen ions can be avoided or at least reduced by the vapor-containing gas atmosphere.

  In order to achieve an optimal distribution of the steam / gas mixture DGG along the outer wall 2.1, the distribution conduit 1.9 is small from the outer wall 2.1 between the outer wall 2.1 and the inner insulation 3.2. Placed at a distance. The inner insulation 3.2 annularly surrounds the outer wall 2.1 and thus seals the melt conduction channel 2 at least thermally from the outside. The inner insulation 3.2 usually has a smaller insulation capacity than the outer insulation 3.1.

  A gas-permeable separation layer 1.10 made of a thin, fire-resistant and gas-permeable material is arranged between the outer wall 2.1 and the distribution conduit 1.9. For example, suitable materials here are ceramic fiber mats, textiles or other fiber composites. A porous and fireproof material is also conceivable which prevents direct contact between the distribution conduit 1.9 and the outer wall 2.1. For example, a material suitable for this purpose consists of aluminum oxide, for example hollow corundum spheres, which require sufficient porosity to allow the vapor / gas mixture DGG to pass through the outer wall 2.1. The maximum layer thickness of separation layer 1.10 is defined as 20 mm.

  The separation layer 1.10 is not shown in this example for the sake of clarity. FIG. 10 shows by way of example a separation layer 1.10.

  The high gas permeability of the separation layer 1.10 compared to the inner insulation 3.2 allows for an optimal alignment of the laminar flow of the vapor / gas mixture DGG and thus the outer wall 2.1 by the vapor / gas mixture DGG. Allows complete wetting of As a result, the inner insulation 3.2 acts in the same way as a housing for guiding the vapor / gas mixture DGG around the outer wall 2.1 of the melt conduction channel 2.

  The separation layer 1.10 and all other components of the device 1 arranged in contact with or in the immediate vicinity of the outer wall 2.1 preferably have impurities which can damage the outer wall 2.1. Not contain at all, or contain extremely small amounts of impurities. These include impurities made of carbon, sulfur, silicon, boron, aluminum, phosphorus, arsenic, iron and the like.

  This is because platinum forms low melting eutectics with many metals, which cause chemical and / or mechanical damage to platinum. Alloying is promoted by reducing conditions in platinum or adjacent materials, which can result in damage to platinum through hole formation.

  FIG. 3 schematically shows an example of a plant component A having a melt conduction channel 2 and a plurality of devices 1. Plant component A is generally provided for use in chemical plant construction, in particular for the production of glass.

  The melt conduction channel 2 is divided into a plurality of sections, each section forming subassemblies B1 to B4 of plant component A, each subassembly B1 to B4 being assigned at least one device 1.

  In the illustrated embodiment, a non-metallic melt of inorganic material is supplied to the first subassembly B1 from a melting apparatus not shown. Here, the first subassembly B1 serves to influence the temperature of the melt supplied and is connected to the device 1.

  The second subassembly B2 constitutes the so-called purification cell, which is the purification and degassing of the inorganic non-metallic melt that takes place at high temperature and low flow rate of the melt. Each has a distribution conduit 1.9, as the length of the melt conduction channel 2 for the second subassembly B2 is greater than that of the first subassembly B1, for example 2 m in length Two devices 1 are provided, for example, with a distribution conduit 1.9, each of which preferably has a length of 1 m or less. Generally, it can be said that a plurality of devices 1 are provided over the length of the melt conduction channel 2 over 0.8 m and beyond.

  The third subassembly B3 is a cooling tube and serves for the controlled cooling of the inorganic non-metallic melt to a temperature close to the processing temperature. In this case, the melt conduction channel 2 is very long compared to the first subassembly B1, so that two devices 1 are provided as well.

  For example, the fourth subassembly B4 is a feeder spout having a metering device B4.1, the feeder spout together with the metering device B4.1, as a drip feeder for a blowing machine, or for forming an inorganic non-metallic melt It is configured as a press or as a pipe drawing device, for example as a feeder spout for a danner pipe drawing device.

  In the region of the metering device B4.1, the melt conduction channel 2 extends vertically and thus the melt of the region of the fourth subassembly 4 and the other subassemblies B1 to B3 arranged above the metering device B4.1. It extends perpendicularly to the conduction channel 2.

  Here, the fourth subassembly B4 is assigned three devices 1, but only one of these is shown in this example. Another device 1 is shown in FIG. 8 and is assigned to the feeder spout.

  The distribution conduit 1.9 annularly surrounds the outer wall 2.1 of the vertical cross section of the melt conduction channel 2 and the supply of the vapor / gas mixture DGG likewise takes place through the opening of the distribution conduit 1.9. Through 10 to the outer wall 2.1. The details of such a distribution conduit 1.9 are shown in FIG.

  If the vertical cross section of the melt conduction channel 2 is longer than that shown in the example, a plurality of devices 1 are provided, the individual distribution conduits 1.9 being spaced from one another 500 mm.

  Furthermore, each subassembly B1-B4 and each section of the melt conduction channel 2 has at least two flow guiding flanges 2.3, which are not shown in this example for the sake of clarity. However, these flow guiding flanges 2.3 are schematically shown by way of example in FIGS. 7 and 8.

  Furthermore, the subassemblies B1 to B4 are surrounded by a thermal insulation 3 consisting of an inner thermal insulation 3.2 and an outer thermal insulation 3.1, only the thermal insulation 3 being shown here for the sake of clarity. The heat insulating material 3 can alternatively be composed of a plurality of layers.

  In essence, the insulation 3.1, 3.2 concentrically arranged around the subassemblies B1 to B4 with the flow-introducing flange 2.3, that the outside air approaches the outer wall 2.1 in the same way as the housing Can be said to at least significantly prevent or completely prevent.

  The subassemblies B1 to B4 here are exemplary concrete embodiments of the plant component A without excluding other variants of the subassembly as known in chemical technology.

  An important embodiment for the use of the device 1 according to the invention is the outer wall 2.1 of the melt conduction channel 2 carrying an inorganic nonmetallic melt, the wall being made of a noble metal, in particular platinum or platinum alloy, and also melting It is necessary to provide a vapor-containing gas atmosphere in the outer wall 2.1 of the material conduction channel 2 or in the chamber of the plant component A.

  The vapor / gas mixture DGG supplied to the outer wall 2.1 is chosen such that no reduction conditions occur that can damage the platinum-containing outer wall 2.1 as a result of undesired alloy formation in the platinum-containing outer wall 2.1.

  FIG. 4 shows schematically the details of the plant component A in which the distribution conduit 1.9 and the supply conduit 1.8 are arranged at an angle different from 90 ° to one another. Here, the distribution conduit 1.9 extends parallel to the longitudinal direction of the melt conduction channel 2.

  For further clarification, the distribution conduit 1.9 and the supply conduit 1.8 are shown here with a relatively large diameter.

  The angle between the distribution conduit 1.9 and the supply conduit 1.8 is the outer wall 2.1 of the melt conduction channel 2 with a distance of only 10 mm to 20 mm between the distribution conduit 1.9 as shown in this example. It is chosen to extend parallel to

  Again, as mentioned above, a separating layer 1.10 (not shown here) is arranged between the outer wall 2.1 and the distribution conduit 1.9.

  FIG. 5 shows an arrangement similar to the embodiment shown in FIG. 4 of the distribution conduit 1.9 and the supply conduit 1.8, the distribution conduit 1.9 and the supply conduit 1.8 being shown in insulated form.

  FIG. 6 shows schematically the details of the ring-shaped distribution conduit 1.9, as indicated in the scope of the metering device B4.1 in FIG.

  Here, the outer wall 2.1 of the melt conduction channel 2 in the fourth subassembly B4 is surrounded by two semicircular distribution conduits 1.9 or one annular distribution conduit 1.9.

  FIG. 7 shows a cross section of the melt conduction channel 2 with two flow guiding flanges 2.3, an inner insulation 3.2 surrounding the outer wall 2.1 of the melt conduction channel 2 and an inner insulation 3.2. Details of an embodiment of a plant component A with a surrounding outer insulation 3.1 and a device 1 in which a distribution conduit 1.9 is arranged in the area of the inner insulation 3.2 are shown.

  The device 1 is partly arranged in the outer insulation 3.1, so that the liquid temperature in the vessel 1.1 reaches a range of 5 K to 60 K below the boiling point. For water as liquid F, a suitable fixed value in the range of 40 <0> C to 95 <0> C may be selected to adjust the vapor flow rate, taking into account the carrier gas flow rate and the required liquid volume.

  The device 1 is arranged in the outer insulation 3.1 such that the amount of vaporization of the liquid per unit time here is less than 0.1 l / h. The adjustment of the liquid amount per unit time is additionally performed in consideration of the volumetric flow rate of the carrier gas G. A minimum volumetric flow of carrier gas G is required to be able to carry sufficient vapor. Here, a particularly high proportion of steam in the steam / gas mixture DGG is advantageous as it reliably prevents the diffusion of hydrogen through the outer wall 2.1. This allows uncomplicated closed loop control and open loop control of the flow of carrier gas G and vapor / gas mixture DGG. On the other hand, excessively high carrier gas flow rates can reduce the proportion of steam unacceptably.

  The flow guiding flange 2.3 serves to prevent the outward flow of the steam / gas mixture DGG from the area close to the outer wall 2.1. For this purpose, the insulation 3, in particular the inner insulation 3.2, is brought into close proximity to the respective flow-inducing flange 2.3 and thus acts like a poorly sealed housing. The small gap between the inner insulation 3.2 and the flow-introducing flange 2.3 can in any case not be completely avoided during the heating of the plant component A.

  Due to the small size of the gap between each flow-inducing flange 2.3 and the inner insulation 3.2, a steam-containing gas atmosphere is ensured in the outer wall 2.1 even with a low flow steam / gas mixture DGG It is enough. One end of the distribution conduit 1.9 is respectively disposed at least 10 mm to 20 mm in front of the inner surface of the flow guiding flange 2.3, as shown in FIG.

  Guide the flow of the steam / gas mixture DGG between the inner insulation 3.2 sealing the outside and the outer wall 2.1 outward in the direction of the flow-inducing flange 2.3 / Has a substantial influence on the outer wall 2.1 completely wetted by the gas mixture DGG.

  Also, in order to reliably prevent the outside air from entering the gap between the outer wall 2.1 and the inner heat insulating material 3.2, the flow pressure of the carrier gas G needs to be sufficiently high. Since the vapor / gas mixture DGG is not consumed by chemical reactions, it is sufficient if it is continuously present at a sufficient vapor pressure.

  If a nonoxidizing carrier gas G, for example a noble gas or nitrogen, is used, a reduction of the platinum loss in the outer wall 2.1 can occur as a secondary effect as a result of the replacement of atmospheric oxygen. The higher the temperature of the outer wall 2.1, the higher these losses.

  FIG. 8 shows the implementation of plant component A in the same way as FIG. 7 except that the device 1, in particular the container 1.1, is in this case arranged further inside the outer insulation 3.1. An example is shown.

  This shows the possibility of influencing the liquid temperature in the vessel 1.1 and thus the ratio of vapors in the vapor / gas mixture DGG.

  The greater the proportion of the device 1 extending into the outer insulation 3.1, in particular the container 1.1, the higher the liquid temperature in the container 1.1. Furthermore, the ambient temperature and the ambient flow rate which affect the liquid temperature in the container 1.1 can be changed by mechanical adjustment of the device 1.

  FIG. 9 shows a portion, in particular a cross section, of a fourth subassembly B4 according to FIG. 3 in the area of the feeder spout.

  Due to the arrangement of the metering device B4.1, it is not possible to position the distribution conduit 1.9 like the other subassemblies B1 to B3. This is also the case for the larger diameter of the melt conduction channel 2 over 200 mm.

  Here, in order to ensure a very complete wetting of the outer wall 2.1 by the steam / gas mixture DGG, the two devices are arranged such that the distribution conduit 1.9 is arranged both on the left and on the right in the viewing direction 1 is provided.

  Furthermore, the insulation 3 comprises an additional intermediate insulation 3.3 which is arranged here between the inner insulation 3.2 and the outer insulation 3.1.

  FIG. 10 shows the details of the melt conduction channel 2 with the distribution conduit 1.9 and the gas permeable separation layer 1.10. In particular, the lower half of the melt conducting channel 2, the inner insulation 3.2, the distribution conduit 1.9 between the outer wall 2.1 and the inner insulation 3.2, and the gas permeable separation layer 1.10 It is shown.

1 device 1.1 container 1.2 liquid supply conduit 1.3 liquid container 1.4 pump 1.5 gas supply conduit 1.6 gas storage container 1.7 gas supply source 1.8 supply conduit 1.9 distribution conduit 1 .10 Separated layer 2 Melt conduction channel 2.1 Outer wall 2.2 inner wall 2.3 flow guiding flange 3 thermal insulation 3.1 outer thermal insulation 3.2 inner thermal insulation 3.3 intermediate thermal insulation A plant component B1 B4 Subassembly B4.1 Weighing device D Vapor space DGG Vapor / gas mixture F Liquid G Carrier gas P level

Claims (14)

Device (1) for generating a vapor-containing gas atmosphere in the outer wall (2.1) and / or the inner wall (2.2) of the melt conduction channel (2) or in the space within the plant component (A) And
A container (1.1) for containing a liquid (F) and a carrier gas (G), wherein the carrier gas (G) mixes with the vapor of the liquid (F) to form a vapor / gas mixture (DGG) A vapor space (D) is formed in the vessel (1.1) to produce
At least one distribution conduit for distributing the steam / gas mixture (DGG) along the outer wall (2.1) and / or the inner wall (2.2) or into the space of the plant component (A) A device (1) characterized by having (1.9).   The carrier gas (G) is supplied from the gas storage vessel (1.6) to the vapor space (D) of the vessel (1.1) via a gas supply conduit (1.5). The device described (1).   The liquid (F) is introduced from a liquid container (1.3) into the container (1.1) via a liquid supply conduit (1.2) until a predetermined level (P) is reached. Or the apparatus (1) as described in 2.   Device (1) according to claim 3, characterized in that the vapor space (D) is formed above the level (P).   Said distribution conduit (1.9) has a plurality of openings made in the wall of said distribution conduit (1.9) through which said vapor / gas mixture (DGG) is distributed to said distribution conduit (1) The apparatus (1) according to any one of claims 1 to 4, which is discharged from .9).   At least one melt conduction channel (2) having an outer wall (2.1) and an inner wall (2.2) facing the melt, and at least one device (1) according to any of the preceding claims And plant components (A).   The outer wall (2.1) of the melt conduction channel (2) is provided with a noble metal layer, and the inner wall (2.2) of the melt conduction channel (2) is provided with a refractory material The plant component (A) according to claim 6.   A gas permeable separation layer (1.10) is arranged between the distribution conduit (1.9) and the outer wall (2.1) of the melt conduction channel (2). A plant component (A) according to claim 6 or 7.   9. A device according to any of claims 6 to 8, characterized in that the distribution conduit (1.9) extends parallel to the outer wall (2.1) along the longitudinal extension of the melt conduction channel (2). Plant component (A) according to any one of the preceding claims.   9. A device according to any of claims 6 to 8, characterized in that the distribution conduit (1.9) extends at least in part circumferentially of the outer wall (2.1) of the melt conduction channel (2). Plant component (A) according to any one of the preceding claims.   A plant component according to any one of claims 6 to 10, wherein the melt conduction channel (2) comprises at least two flow directing flanges (2.3) defining the channel (2) at the end face. A).   12. A heat insulating material (3) formed by at least the inner heat insulating material (3.2) and the outer heat insulating material (3.1), the melt conduction channel (2) being surrounded by any one of the claims 6-11. Plant component (A) as described in.   Plant component (A) according to claim 12, wherein the container (1.1) is at least partially arranged in the outer insulation (3.1).   Plant according to claim 12 or 13, wherein there are gaps respectively between the end of the flow guiding flange (2.3) facing the melt conduction channel (2) and the inner insulation (3.2). Component (A).

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