JP2018520410A5 - - Google Patents

Download PDF

Info

Publication number
JP2018520410A5
JP2018520410A5 JP2017557908A JP2017557908A JP2018520410A5 JP 2018520410 A5 JP2018520410 A5 JP 2018520410A5 JP 2017557908 A JP2017557908 A JP 2017557908A JP 2017557908 A JP2017557908 A JP 2017557908A JP 2018520410 A5 JP2018520410 A5 JP 2018520410A5
Authority
JP
Japan
Prior art keywords
wom
bits
symbol
code
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017557908A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018520410A (ja
JP6975047B2 (ja
Filing date
Publication date
Priority claimed from US14/703,714 external-priority patent/US9772899B2/en
Application filed filed Critical
Publication of JP2018520410A publication Critical patent/JP2018520410A/ja
Publication of JP2018520410A5 publication Critical patent/JP2018520410A5/ja
Application granted granted Critical
Publication of JP6975047B2 publication Critical patent/JP6975047B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017557908A 2015-05-04 2016-05-04 ライトワンスメモリコードのエラー訂正コード管理 Active JP6975047B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/703,714 2015-05-04
US14/703,714 US9772899B2 (en) 2015-05-04 2015-05-04 Error correction code management of write-once memory codes
PCT/US2016/030822 WO2016179309A1 (en) 2015-05-04 2016-05-04 Error correction code management of write-once memory codes

Publications (3)

Publication Number Publication Date
JP2018520410A JP2018520410A (ja) 2018-07-26
JP2018520410A5 true JP2018520410A5 (enExample) 2019-06-13
JP6975047B2 JP6975047B2 (ja) 2021-12-01

Family

ID=57217974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017557908A Active JP6975047B2 (ja) 2015-05-04 2016-05-04 ライトワンスメモリコードのエラー訂正コード管理

Country Status (4)

Country Link
US (2) US9772899B2 (enExample)
JP (1) JP6975047B2 (enExample)
CN (2) CN113223601A (enExample)
WO (1) WO2016179309A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9772899B2 (en) * 2015-05-04 2017-09-26 Texas Instruments Incorporated Error correction code management of write-once memory codes
DE102015113414B4 (de) * 2015-08-14 2023-02-23 Infineon Technologies Ag Fehlerkorrektur unter Verwendung von WOM-Codes
KR102645140B1 (ko) * 2018-12-06 2024-03-07 삼성전자주식회사 Fpga를 포함하는 메모리 시스템 및 이의 동작 방법
EP4060670B1 (en) * 2021-03-18 2025-07-30 Murata Manufacturing Co., Ltd. Multiple time programmable memory using one time programmable memory and error correction codes
TWI838137B (zh) * 2023-02-23 2024-04-01 大陸商集創北方（珠海）科技有限公司 具寫入保護功能的燒寫控制電路、電子晶片以及資訊處理裝置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2285524B (en) * 1994-01-11 1998-02-04 Advanced Risc Mach Ltd Data memory and processor bus
KR100223634B1 (ko) * 1997-01-15 1999-10-15 윤종용 고속 데이타 처리 및 전송을 위한 에러정정용 메모리를 구비하는 시스템 디코더 및 에러정정용 메모리 제어방법
US6751769B2 (en) * 2000-06-06 2004-06-15 International Business Machines Corporation (146,130) error correction code utilizing address information
EP1346364B8 (en) * 2000-12-20 2013-01-09 Callahan Cellular L.L.C. Data processing device with a write once memory (wom)
EP1233523A1 (en) * 2001-02-16 2002-08-21 Deutsche Thomson-Brandt Gmbh Method and apparatus for decoding error correction code
US6901549B2 (en) * 2001-12-14 2005-05-31 Matrix Semiconductor, Inc. Method for altering a word stored in a write-once memory device
US7069494B2 (en) * 2003-04-17 2006-06-27 International Business Machines Corporation Application of special ECC matrix for solving stuck bit faults in an ECC protected mechanism
DE102005040916A1 (de) * 2005-08-30 2007-03-08 Robert Bosch Gmbh Speicheranordnung und Betriebsverfahren dafür
US7802169B2 (en) * 2005-12-12 2010-09-21 Mediatek Inc. Error correction devices and correction methods
WO2009067633A1 (en) * 2007-11-20 2009-05-28 California Institute Of Technology Rank modulation for memory devices
US8341501B2 (en) * 2009-04-30 2012-12-25 International Business Machines Corporation Adaptive endurance coding of non-volatile memories
CN102103558B (zh) * 2009-12-18 2013-09-18 上海华虹集成电路有限责任公司 一种带有写重传功能的多通道NANDflash控制器
CN102339648B (zh) * 2010-07-23 2014-07-09 北京兆易创新科技股份有限公司 一种检错/纠错校验模块的检测方法及装置
US9070427B2 (en) * 2010-08-13 2015-06-30 Sandisk Technologies Inc. Data coding using divisions of memory cell states
US8780620B2 (en) * 2010-09-20 2014-07-15 The Texas A&M University Information representation and coding for nonvolatile memories
US8959417B2 (en) * 2011-11-23 2015-02-17 Marvell World Trade Ltd. Providing low-latency error correcting code capability for memory
US8645789B2 (en) * 2011-12-22 2014-02-04 Sandisk Technologies Inc. Multi-phase ECC encoding using algebraic codes
WO2013134735A1 (en) * 2012-03-08 2013-09-12 California Institute Of Technology Rank-modulation rewriting codes for flash memories
US9230652B2 (en) * 2012-03-08 2016-01-05 California Institute Of Technology Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
US8914570B2 (en) * 2012-05-04 2014-12-16 International Business Machines Corporation Selective write-once-memory encoding in a flash based disk cache memory
US9632866B2 (en) 2012-09-28 2017-04-25 Duke University Systems for and methods of extending lifetime of non-volatile memory
WO2014116301A1 (en) 2013-01-24 2014-07-31 California Institute Of Technology Joint rewriting and error correction in write-once memories
KR102068519B1 (ko) * 2013-07-01 2020-01-21 삼성전자주식회사 저장 장치, 그것의 쓰기 방법 및 읽기 방법
WO2016123590A1 (en) * 2015-01-30 2016-08-04 California Institute Of Technology Rewriting flash memories by message passing
US9772899B2 (en) * 2015-05-04 2017-09-26 Texas Instruments Incorporated Error correction code management of write-once memory codes

Similar Documents

Publication Publication Date Title
US8726140B2 (en) Dummy data padding and error code correcting memory controller, data processing method thereof, and memory system including the same
CN102110481A (zh) 具有ecc电路的半导体存储系统及其控制方法
KR101686980B1 (ko) 비휘발성 메모리 내의 데이터 저장 방법
CN101573694B (zh) 用于小数据结构的ecc保护的方法、系统和装置
JP2018520410A5 (enExample)
JP5722420B2 (ja) 縮退故障を有するメモリセル内にビットを記憶するための技術
JP6540703B2 (ja) メモリコントローラおよびメモリコントローラの制御方法
TW201344696A (zh) 基於統計分佈之可變位元錯誤更正編碼
US11243838B2 (en) Methods and apparatuses for error correction
CN114694739B (zh) 闪存控制器及其中的编码电路
CN101388256B (zh) 用于一存储器元件产生一低级错误更正码的控制器及方法
TW201941053A (zh) 採用連氏錯誤校正碼設計的記憶體儲存裝置及其編碼方法
JP6975047B2 (ja) ライトワンスメモリコードのエラー訂正コード管理
KR102420641B1 (ko) 에러정정방법 및 이를 이용한 반도체장치
CN106874139A (zh) 一种用于错误检查和纠正的编解码方法、装置及处理器
KR102674590B1 (ko) 반도체시스템
WO2010139131A1 (zh) 闪存的控制器以及于闪存存取数据的方法
TW201738898A (zh) 資料校正方法、記憶體控制電路單元與記憶體儲存裝置
KR102686057B1 (ko) 반도체장치 및 반도체시스템
US20190294497A1 (en) Method of implementing error correction code used by memory storage apparatus and memory storage apparatus using the same
JP4327883B1 (ja) 情報処理装置、情報処理方法
TWI537971B (zh) Storage device and access method thereof
KR102686058B1 (ko) 반도체장치
KR102469809B1 (ko) 반도체장치
US10951238B1 (en) Memory system and method for controlling non-volatile memory