JP2018520410A5 - - Google Patents

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Publication number
JP2018520410A5
JP2018520410A5 JP2017557908A JP2017557908A JP2018520410A5 JP 2018520410 A5 JP2018520410 A5 JP 2018520410A5 JP 2017557908 A JP2017557908 A JP 2017557908A JP 2017557908 A JP2017557908 A JP 2017557908A JP 2018520410 A5 JP2018520410 A5 JP 2018520410A5
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Japan
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wom
bits
symbol
code
word
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JP2017557908A
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Japanese (ja)
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JP2018520410A (ja
JP6975047B2 (ja
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Priority claimed from US14/703,714 external-priority patent/US9772899B2/en
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JP2017557908A 2015-05-04 2016-05-04 ライトワンスメモリコードのエラー訂正コード管理 Active JP6975047B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/703,714 US9772899B2 (en) 2015-05-04 2015-05-04 Error correction code management of write-once memory codes
US14/703,714 2015-05-04
PCT/US2016/030822 WO2016179309A1 (en) 2015-05-04 2016-05-04 Error correction code management of write-once memory codes

Publications (3)

Publication Number Publication Date
JP2018520410A JP2018520410A (ja) 2018-07-26
JP2018520410A5 true JP2018520410A5 (enExample) 2019-06-13
JP6975047B2 JP6975047B2 (ja) 2021-12-01

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JP2017557908A Active JP6975047B2 (ja) 2015-05-04 2016-05-04 ライトワンスメモリコードのエラー訂正コード管理

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US (2) US9772899B2 (enExample)
JP (1) JP6975047B2 (enExample)
CN (2) CN113223601B (enExample)
WO (1) WO2016179309A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9772899B2 (en) * 2015-05-04 2017-09-26 Texas Instruments Incorporated Error correction code management of write-once memory codes
DE102015113414B4 (de) * 2015-08-14 2023-02-23 Infineon Technologies Ag Fehlerkorrektur unter Verwendung von WOM-Codes
KR102645140B1 (ko) * 2018-12-06 2024-03-07 삼성전자주식회사 Fpga를 포함하는 메모리 시스템 및 이의 동작 방법
US11164652B2 (en) * 2019-06-21 2021-11-02 Micron Technology, Inc. Two-layer code with low parity cost for memory sub-systems
EP4060670B1 (en) 2021-03-18 2025-07-30 Murata Manufacturing Co., Ltd. Multiple time programmable memory using one time programmable memory and error correction codes
TWI838137B (zh) * 2023-02-23 2024-04-01 大陸商集創北方（珠海）科技有限公司 具寫入保護功能的燒寫控制電路、電子晶片以及資訊處理裝置

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KR100223634B1 (ko) * 1997-01-15 1999-10-15 윤종용 고속 데이타 처리 및 전송을 위한 에러정정용 메모리를 구비하는 시스템 디코더 및 에러정정용 메모리 제어방법
US6751769B2 (en) * 2000-06-06 2004-06-15 International Business Machines Corporation (146,130) error correction code utilizing address information
EP1346364B8 (en) * 2000-12-20 2013-01-09 Callahan Cellular L.L.C. Data processing device with a write once memory (wom)
EP1233523A1 (en) * 2001-02-16 2002-08-21 Deutsche Thomson-Brandt Gmbh Method and apparatus for decoding error correction code
US6901549B2 (en) * 2001-12-14 2005-05-31 Matrix Semiconductor, Inc. Method for altering a word stored in a write-once memory device
US7069494B2 (en) * 2003-04-17 2006-06-27 International Business Machines Corporation Application of special ECC matrix for solving stuck bit faults in an ECC protected mechanism
DE102005040916A1 (de) * 2005-08-30 2007-03-08 Robert Bosch Gmbh Speicheranordnung und Betriebsverfahren dafür
US7802169B2 (en) * 2005-12-12 2010-09-21 Mediatek Inc. Error correction devices and correction methods
US8245094B2 (en) * 2007-11-20 2012-08-14 California Institute of Technology Texas A & M Rank modulation for flash memories
US8341501B2 (en) * 2009-04-30 2012-12-25 International Business Machines Corporation Adaptive endurance coding of non-volatile memories
CN102103558B (zh) * 2009-12-18 2013-09-18 上海华虹集成电路有限责任公司 一种带有写重传功能的多通道NANDflash控制器
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US9946475B2 (en) * 2013-01-24 2018-04-17 California Institute Of Technology Joint rewriting and error correction in write-once memories
KR102068519B1 (ko) * 2013-07-01 2020-01-21 삼성전자주식회사 저장 장치, 그것의 쓰기 방법 및 읽기 방법
WO2016123590A1 (en) * 2015-01-30 2016-08-04 California Institute Of Technology Rewriting flash memories by message passing
US9772899B2 (en) * 2015-05-04 2017-09-26 Texas Instruments Incorporated Error correction code management of write-once memory codes

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