JP2018519661A - 高熱伝導率ウェハー支持ペデスタル装置 - Google Patents
高熱伝導率ウェハー支持ペデスタル装置 Download PDFInfo
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- JP2018519661A JP2018519661A JP2017563014A JP2017563014A JP2018519661A JP 2018519661 A JP2018519661 A JP 2018519661A JP 2017563014 A JP2017563014 A JP 2017563014A JP 2017563014 A JP2017563014 A JP 2017563014A JP 2018519661 A JP2018519661 A JP 2018519661A
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 239000012530 fluid Substances 0.000 claims abstract description 99
- 238000001816 cooling Methods 0.000 claims abstract description 70
- 239000012809 cooling fluid Substances 0.000 claims description 33
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 210000002304 esc Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
以下の説明は事実上の例示に過ぎず、本発明、あるいは本発明の用途または利用法を限定することは意図していない。例えば、本発明の以下の形態は、半導体処理において使用されるチャック用の支持アセンブリ、場合によっては静電チャックに指向したものである。しかし、本明細書中に提供する支持アセンブリ及びシステムは、種々の用途に用いることができ、半導体処理用途に限定されないことは明らかである。
Claims (16)
- 静電チャック用の支持ペデスタル装置であって、
内部キャビティを規定するベース筐体と、
前記ベース筐体の前記内部キャビティに近接して配置されたベース挿入体と、
前記内部キャビティ内に配置された少なくとも1つの流体経路とを具え、
前記流体経路は、
対応する複数の平行線状の冷却フィンによって分離された複数の平行線状の冷却流路と、
流体供給流路と、
流体戻り流路とを規定し、
前記冷却流体は、前記流体供給流路を通り、前記複数の平行線状の冷却流路を通り、前記流体戻り流路を通って戻ることによって前記流体経路を通って流れて、前記支持ペデスタル装置を冷却することができる、支持ペデスタル装置。 - 前記平行線状の冷却フィンが前記ベース挿入体の一部分である、請求項1に記載の支持ペデスタル装置。
- 前記平行線状の冷却フィンが前記ベース筐体の一部分である、請求項1に記載の支持ペデスタル装置。
- 第1流体経路が前記ベース挿入体内に形成され、第2流体経路が前記ベース筐体内に形成され、前記流体経路の各々が、前記対応する複数の平行線状の冷却フィンによって分離された前記複数の平行線状の冷却流路、前記流体供給流路、及び前記流体戻り流路を規定し、前記平行線状の冷却フィンが前記ベース筐体及び前記ベース挿入体の一部分である、請求項1に記載の支持ペデスタル装置。
- 前記ベース筐体と前記ベース挿入体とが別個の構成要素である、請求項1に記載の支持ペデスタル装置。
- 前記ベース筐体及び前記ベース挿入体を通って延びる複数の電極フィードスルーをさらに具えている、請求項1に記載の支持ペデスタル装置。
- 前記ベース筐体内または前記ベース挿入体内のいずれかに形成された凹部内に配置された複数のスペーサをさらに具え、前記電極フィードスルーが前記スペーサを通って延びる、請求項6に記載の支持ペデスタル装置。
- 前記流体供給流路が、中心部分から半径方向に、前記冷却流路に平行な方向に延び、次に前記流体経路の外周の周りに両円周方向に延びる、請求項1に記載の支持ペデスタル装置。
- 前記流体戻り流路が、両円周方向に延び、次に中心部分まで半径方向に、前記流体経路の前記冷却流路に平行な方向に延びる、請求項1に記載の支持ペデスタル装置。
- 流体入口及び流体出口が、前記支持ペデスタル装置の周囲領域の周りに形成されている、請求項1に記載の支持ペデスタル装置。
- 前記ベース挿入体が、前記ベース筐体の前記内部キャビティの内側面に接する外側面を規定する下部半径方向フランジを具えている、請求項1に記載の支持ペデスタル装置。
- 前記複数の冷却流路が同一の断面積を規定する、請求項1に記載の支持ペデスタル装置。
- 前記冷却流路が約10:1のアスペクト比を規定する、請求項12に記載の支持ペデスタル装置。
- 前記支持ペデスタル装置が、0.000171℃/W以下の熱抵抗を規定する、請求項1に記載の支持ペデスタル装置。
- 前記ベース筐体と前記ベース挿入体との接触面が平面である、請求項1に記載の支持ペデスタル装置。
- 前記平行線状の冷却フィンが、前記支持ペデスタル装置全体にわたって異なる熱伝導率のゾーンを提供するような間隔及び幾何学的形状を規定する、請求項1に記載の支持ペデスタル装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562171539P | 2015-06-05 | 2015-06-05 | |
US62/171,539 | 2015-06-05 | ||
PCT/US2016/035970 WO2016197083A1 (en) | 2015-06-05 | 2016-06-06 | High thermal conductivity wafer support pedestal device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018519661A true JP2018519661A (ja) | 2018-07-19 |
JP6799014B2 JP6799014B2 (ja) | 2020-12-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017563014A Active JP6799014B2 (ja) | 2015-06-05 | 2016-06-06 | 高熱伝導率ウェハー支持ペデスタル装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160358761A1 (ja) |
EP (1) | EP3304584B1 (ja) |
JP (1) | JP6799014B2 (ja) |
KR (1) | KR20180020177A (ja) |
CN (1) | CN107851592A (ja) |
TW (1) | TWI616976B (ja) |
WO (1) | WO2016197083A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112757161A (zh) * | 2020-12-31 | 2021-05-07 | 上海超硅半导体有限公司 | 一种抛光载具的修整方法 |
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US11915850B2 (en) * | 2017-12-20 | 2024-02-27 | Applied Materials, Inc. | Two channel cosine-theta coil assembly |
US20220139681A1 (en) * | 2019-03-08 | 2022-05-05 | Lam Research Corporation | Chuck for plasma processing chamber |
US20200381271A1 (en) * | 2019-05-28 | 2020-12-03 | Applied Materials, Inc. | System and apparatus for enhanced substrate heating and rapid substrate cooling |
CN111128844A (zh) * | 2019-12-31 | 2020-05-08 | 苏州芯慧联半导体科技有限公司 | 一种高冷却性能的静电卡盘 |
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JP2003257943A (ja) * | 2002-02-28 | 2003-09-12 | Anelva Corp | 表面処理装置 |
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2016
- 2016-06-06 WO PCT/US2016/035970 patent/WO2016197083A1/en active Application Filing
- 2016-06-06 CN CN201680045771.XA patent/CN107851592A/zh active Pending
- 2016-06-06 KR KR1020177037574A patent/KR20180020177A/ko unknown
- 2016-06-06 JP JP2017563014A patent/JP6799014B2/ja active Active
- 2016-06-06 TW TW105117847A patent/TWI616976B/zh active
- 2016-06-06 US US15/173,832 patent/US20160358761A1/en not_active Abandoned
- 2016-06-06 EP EP16731711.4A patent/EP3304584B1/en active Active
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JP2003257943A (ja) * | 2002-02-28 | 2003-09-12 | Anelva Corp | 表面処理装置 |
JP2005079539A (ja) * | 2003-09-03 | 2005-03-24 | Hitachi Ltd | プラズマ処理装置 |
JP2011176275A (ja) * | 2010-01-29 | 2011-09-08 | Sumitomo Osaka Cement Co Ltd | 静電チャック装置 |
JP2014011313A (ja) * | 2012-06-29 | 2014-01-20 | Kyocera Corp | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112757161A (zh) * | 2020-12-31 | 2021-05-07 | 上海超硅半导体有限公司 | 一种抛光载具的修整方法 |
CN112757161B (zh) * | 2020-12-31 | 2022-04-19 | 上海超硅半导体股份有限公司 | 一种抛光载具的修整方法 |
Also Published As
Publication number | Publication date |
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EP3304584A1 (en) | 2018-04-11 |
TWI616976B (zh) | 2018-03-01 |
EP3304584B1 (en) | 2019-12-04 |
TW201709399A (zh) | 2017-03-01 |
WO2016197083A1 (en) | 2016-12-08 |
WO2016197083A8 (en) | 2017-12-28 |
JP6799014B2 (ja) | 2020-12-09 |
CN107851592A (zh) | 2018-03-27 |
US20160358761A1 (en) | 2016-12-08 |
KR20180020177A (ko) | 2018-02-27 |
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