JP2018519535A - マイクロリソグラフィ投影装置を作動させる方法 - Google Patents

マイクロリソグラフィ投影装置を作動させる方法 Download PDF

Info

Publication number
JP2018519535A
JP2018519535A JP2017560767A JP2017560767A JP2018519535A JP 2018519535 A JP2018519535 A JP 2018519535A JP 2017560767 A JP2017560767 A JP 2017560767A JP 2017560767 A JP2017560767 A JP 2017560767A JP 2018519535 A JP2018519535 A JP 2018519535A
Authority
JP
Japan
Prior art keywords
mask
field
light
illumination
illumination distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017560767A
Other languages
English (en)
Japanese (ja)
Inventor
ヨルク ツィマーマン
ヨルク ツィマーマン
イェンス ティモ ノイマン
イェンス ティモ ノイマン
フランク シュレゼナー
フランク シュレゼナー
ラルフ ミュラー
ラルフ ミュラー
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2018519535A publication Critical patent/JP2018519535A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2017560767A 2015-05-21 2016-05-14 マイクロリソグラフィ投影装置を作動させる方法 Pending JP2018519535A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015209268 2015-05-21
DE102015209268.2 2015-05-21
PCT/EP2016/000802 WO2016184560A1 (en) 2015-05-21 2016-05-14 Method of operating a microlithographic projection apparatus

Publications (1)

Publication Number Publication Date
JP2018519535A true JP2018519535A (ja) 2018-07-19

Family

ID=56081444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017560767A Pending JP2018519535A (ja) 2015-05-21 2016-05-14 マイクロリソグラフィ投影装置を作動させる方法

Country Status (5)

Country Link
JP (1) JP2018519535A (ko)
KR (1) KR20180010242A (ko)
CN (1) CN107636539A (ko)
TW (1) TW201702756A (ko)
WO (1) WO2016184560A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018207277A1 (de) * 2018-05-09 2019-11-14 Carl Zeiss Smt Gmbh Lithografiemaske, optisches System zur Übertragung von Original Strukturabschnitten der Lithografiemaske sowie Projektionsoptik zur Abbildung eines Objektfeldes, in dem mindestens ein Original-Strukturabschnitt einer Lithografiemaske anordenbar ist
US20200004013A1 (en) * 2018-06-27 2020-01-02 Corning Incorporated Light homogenizing elements with corrective features
US10503076B1 (en) * 2018-08-29 2019-12-10 Applied Materials, Inc. Reserving spatial light modulator sections to address field non-uniformities
DE102018218129B4 (de) * 2018-10-23 2023-10-12 Carl Zeiss Sms Ltd. Verfahren zum Bestimmen von Positionen einer Vielzahl von Pixeln, die in ein Substrat einer photolithographischen Maske eingebracht werden sollen
WO2020233950A1 (en) 2019-05-21 2020-11-26 Asml Netherlands B.V. Method for determining stochastic variation associated with desired pattern
CN113741149B (zh) * 2020-05-29 2023-03-31 上海微电子装备（集团）股份有限公司 套刻测量装置及光学设备
DE102021113780B9 (de) * 2021-05-27 2024-08-01 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
EP4386479A1 (en) * 2022-12-12 2024-06-19 ASML Netherlands B.V. Lithographic apparatus and associated method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801821A (en) * 1995-06-30 1998-09-01 Intel Corporation Photolithography method using coherence distance control
JP2002110540A (ja) * 2000-09-01 2002-04-12 Asm Lithography Bv リソグラフィ装置を操作する方法、リソグラフィ装置、デバイス製造方法、およびそれによって製造されるデバイス
JP2003318106A (ja) * 2002-04-23 2003-11-07 Asml Us Inc リソグラフィシステム、及び、リソグラフィ装置における電磁エネルギーの角分布を照明野位置の関数として制御する方法
JP2005114922A (ja) * 2003-10-06 2005-04-28 Canon Inc 照明光学系及びそれを用いた露光装置
JP2006210623A (ja) * 2005-01-27 2006-08-10 Canon Inc 照明光学系及びそれを有する露光装置
JP2008533728A (ja) * 2005-03-15 2008-08-21 カール・ツァイス・エスエムティー・アーゲー 投影露光方法及びそのための投影露光システム
JP2010004008A (ja) * 2007-10-31 2010-01-07 Nikon Corp 光学ユニット、照明光学装置、露光装置、露光方法、およびデバイス製造方法
WO2010024106A1 (ja) * 2008-08-28 2010-03-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2011527024A (ja) * 2008-06-30 2011-10-20 コーニング インコーポレイテッド マイクロリソグラフィック投影システムのためのテレセントリシティ補正素子
JP2014505368A (ja) * 2011-01-29 2014-02-27 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184727A1 (en) * 2000-09-01 2002-03-06 Asm Lithography B.V. Lithographic apparatus
EP2876499B1 (en) * 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801821A (en) * 1995-06-30 1998-09-01 Intel Corporation Photolithography method using coherence distance control
JP2002110540A (ja) * 2000-09-01 2002-04-12 Asm Lithography Bv リソグラフィ装置を操作する方法、リソグラフィ装置、デバイス製造方法、およびそれによって製造されるデバイス
JP2003318106A (ja) * 2002-04-23 2003-11-07 Asml Us Inc リソグラフィシステム、及び、リソグラフィ装置における電磁エネルギーの角分布を照明野位置の関数として制御する方法
JP2005114922A (ja) * 2003-10-06 2005-04-28 Canon Inc 照明光学系及びそれを用いた露光装置
JP2006210623A (ja) * 2005-01-27 2006-08-10 Canon Inc 照明光学系及びそれを有する露光装置
JP2008533728A (ja) * 2005-03-15 2008-08-21 カール・ツァイス・エスエムティー・アーゲー 投影露光方法及びそのための投影露光システム
JP2010004008A (ja) * 2007-10-31 2010-01-07 Nikon Corp 光学ユニット、照明光学装置、露光装置、露光方法、およびデバイス製造方法
JP2011527024A (ja) * 2008-06-30 2011-10-20 コーニング インコーポレイテッド マイクロリソグラフィック投影システムのためのテレセントリシティ補正素子
WO2010024106A1 (ja) * 2008-08-28 2010-03-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2014505368A (ja) * 2011-01-29 2014-02-27 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系

Also Published As

Publication number Publication date
TW201702756A (zh) 2017-01-16
CN107636539A (zh) 2018-01-26
WO2016184560A1 (en) 2016-11-24
KR20180010242A (ko) 2018-01-30

Similar Documents

Publication Publication Date Title
JP6343344B2 (ja) マイクロリソグラフィ投影露光装置の照明系
US9977333B2 (en) Illumination system for illuminating a mask in a microlithographic exposure apparatus
JP5850267B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP2018519535A (ja) マイクロリソグラフィ投影装置を作動させる方法
JP6016169B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP2010537414A (ja) マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
US9671699B2 (en) Illumination system of a microlithographic projection exposure apparatus
JP6137762B2 (ja) マイクロリソグラフィ装置を作動させる方法
EP3295249B1 (en) Illumination system of a microlithographic projection apparatus and method of adjusting an irradiance distribution in such a system
JP5864771B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP6193963B2 (ja) マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
JP6652948B2 (ja) マイクロリソグラフィ投影露光装置の照明システム
JP5860494B2 (ja) マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181009

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181022

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190121

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20190123

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190417

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190813