JP2018515237A - 巻かれた抵抗体を有する感光性画素構造体 - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/02—Details
- A61N1/04—Electrodes
- A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode
- A61N1/0526—Head electrodes
- A61N1/0543—Retinal electrodes
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/36046—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation of the eye
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
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- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Veterinary Medicine (AREA)
- Ophthalmology & Optometry (AREA)
- Biomedical Technology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Heart & Thoracic Surgery (AREA)
- Cardiology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrotherapy Devices (AREA)
- Prostheses (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (19)
- 基板(15)と、少なくとも1つの感光性ダイオード(12,12’,12’’)と、刺激電極(14)と、抵抗体(16)とを含む感光性画素構造体(10)であって、前記抵抗体(16)が前記刺激電極(14)と対向電極(18)とを電気的に接続しており、前記抵抗体(16)が前記刺激電極(14)によって少なくとも一部覆われている及び/又は前記抵抗体(16)が前記対向電極(18)によって少なくとも一部覆われていることを特徴とする感光性画素構造体(10)。
- 前記抵抗体(16)が、細長い抵抗体である請求項1に記載の感光性画素構造体(10)。
- 前記刺激電極(14)及び/又は前記対向電極(18)によって覆われた領域において、前記抵抗体(16)に、巻かれた形状が設けられている請求項1から2のいずれかに記載の感光性画素構造体(10)。
- 前記基板が、シリコン基板、好ましくは単結晶シリコン基板、特に、少なくともSiO2の層を含む基板である感光性画素構造体(10)。
- 前記対向電極(18)及び/又は前記抵抗体(16)が、前記刺激電極(14)によって占められる領域の少なくとも一部の周り及び/又は前記少なくとも1つのダイオード(12,12’,12’’)によって占められる領域の周りに配置される請求項1から4のいずれかに記載の感光性画素構造体(10)。
- 前記画素構造体(10)の前記対向電極(18)によって覆われる領域において、前記抵抗体(16)が前記対向電極(18)と平行して延在する請求項1から5のいずれかに記載の感光性画素構造体(10)。
- 前記抵抗体(16)が、アモルファス又は多結晶構造を有する請求項1から6のいずれかに記載の感光性画素構造体(10)。
- 前記対向電極(18)が、前記刺激電極(14)の周り及び/又は前記少なくとも1つのダイオード(12,12’,12’’)の周りに配置される請求項1から7のいずれかに記載の感光性画素構造体(10)。
- 請求項1から8のいずれかに記載の少なくとも1つの、好ましくは複数の感光性画素構造体(10)を含み、前記複数の画素構造体(10)がアレイ状に配置されていることを特徴とする感光性画素アレイ(1)。
- 複数の刺激電極にそれぞれ抵抗体(16)によって接続される中心対向電極が設けられている請求項9に記載の感光性画素アレイ(1)。
- 請求項9から10に記載の感光性画素アレイ(1)を含むこと特徴とするインプラント。
- 網膜下インプラントである請求項11に記載のインプラント。
- 請求項1から8のいずれかに記載の画素構造体(10)を提供する方法であって、
−基板(15)を提供する工程と、
−前記基板(15)の上に、少なくとも1つの感光性ダイオードの領域(12,12’,12’’)を設ける工程と、
−前記基板の上に、前記少なくとも1つのダイオード(12,12’)によって占められていない領域に抵抗体(16)を設ける工程と
−刺激電極(14)及び/又は対向電極(18)を前記基板(15)の上に設ける工程とを含み、
前記刺激電極(14)及び/又は前記対向電極(18)が、前記抵抗体(16)を少なくとも一部覆うことを特徴とする方法。 - 前記抵抗体(16)が、直線で細長い構造体として設けられる及び/又は少なくとも一部において、巻かれた構造体として設けられる請求項13に記載の方法。
- 前記抵抗体が、前記基板(15)の原子ドーピングによって設けられる請求項13から14のいずれかに記載の方法。
- 前記抵抗体が、アモルファスシリコン及びポリシリコンを含む群から選択される材料の薄片の原子ドーピングによって設けられる請求項13から14のいずれかに記載の方法。
- 前記抵抗体が、第1の材料の第1のシャント抵抗体と、少なくとも、前記第1の材料と異なる第2の材料の第2のシャント抵抗体とを形成し、前記第1及び前記少なくとも1つの第2のシャント抵抗体を直列に接続することによって設けられる請求項13又は16のいずれかに記載の方法。
- 前記抵抗体が、第1の材料の第1のシャント抵抗体と、少なくとも、前記第1の材料と異なる第2の材料の第2のシャント抵抗体とを形成し、前記第1及び前記少なくとも1つの第2のシャント抵抗体を並列に接続することによって設けられる請求項13又は16のいずれかに記載の方法。
- 少なくとも前記第1の材料が、金属、特に、前記感光性ダイオード(12,12’,12’’)を互いに相互接続し、前記感光性ダイオード(12,12’,12’’)を前記電極(14,18)に相互接続する金属化層を形成する金属である請求項13又は16のいずれかに記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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EP15001427.2 | 2015-05-12 | ||
EP15001427 | 2015-05-12 | ||
EP15001922.2 | 2015-06-29 | ||
EP15001922 | 2015-06-29 | ||
PCT/EP2016/000776 WO2016180535A1 (en) | 2015-05-12 | 2016-05-12 | Photosensitive pixel structure with wrapped resistor |
Publications (2)
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JP2018515237A true JP2018515237A (ja) | 2018-06-14 |
JP6704938B2 JP6704938B2 (ja) | 2020-06-03 |
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JP2017559071A Active JP6704938B2 (ja) | 2015-05-12 | 2016-05-12 | 巻かれた抵抗体を有する感光性画素構造体 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11171163B2 (ja) |
EP (2) | EP3669932A1 (ja) |
JP (1) | JP6704938B2 (ja) |
CN (1) | CN107635620B (ja) |
AU (1) | AU2016261030B2 (ja) |
CA (1) | CA2983360C (ja) |
ES (1) | ES2792985T3 (ja) |
WO (1) | WO2016180535A1 (ja) |
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EP3461529A1 (en) | 2017-09-27 | 2019-04-03 | Pixium Vision SA | Tip, inserter attachment and delivery device |
ES2916713T3 (es) * | 2018-10-30 | 2022-07-05 | Inst De Fisica Daltes Energies | Sistema de visión artificial |
WO2021081533A1 (en) * | 2019-10-25 | 2021-04-29 | Nanovision Biosciences, Inc. | Retinal prostheses |
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2016
- 2016-05-12 JP JP2017559071A patent/JP6704938B2/ja active Active
- 2016-05-12 ES ES16722528T patent/ES2792985T3/es active Active
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US11171163B2 (en) | 2021-11-09 |
JP6704938B2 (ja) | 2020-06-03 |
CN107635620A (zh) | 2018-01-26 |
WO2016180535A1 (en) | 2016-11-17 |
CA2983360C (en) | 2024-03-19 |
ES2792985T3 (es) | 2020-11-12 |
EP3294407B1 (en) | 2020-02-26 |
AU2016261030A1 (en) | 2017-11-09 |
EP3669932A1 (en) | 2020-06-24 |
EP3294407A1 (en) | 2018-03-21 |
CA2983360A1 (en) | 2016-11-17 |
US20180151607A1 (en) | 2018-05-31 |
CN107635620B (zh) | 2021-06-08 |
AU2016261030B2 (en) | 2020-07-23 |
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