JP2018513552A5 - - Google Patents
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- Publication number
- JP2018513552A5 JP2018513552A5 JP2017546641A JP2017546641A JP2018513552A5 JP 2018513552 A5 JP2018513552 A5 JP 2018513552A5 JP 2017546641 A JP2017546641 A JP 2017546641A JP 2017546641 A JP2017546641 A JP 2017546641A JP 2018513552 A5 JP2018513552 A5 JP 2018513552A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- chemical mechanical
- mechanical polishing
- substrate
- ceria particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 38
- 239000000126 substance Substances 0.000 claims 25
- 239000002245 particle Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 13
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 12
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000009826 distribution Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000003002 pH adjusting agent Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 2
- -1 alcohol amines Chemical class 0.000 claims 2
- 238000001237 Raman spectrum Methods 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- 150000003973 alkyl amines Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000008365 aqueous carrier Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562128802P | 2015-03-05 | 2015-03-05 | |
| US62/128,802 | 2015-03-05 | ||
| US15/056,198 | 2016-02-29 | ||
| US15/056,198 US10414947B2 (en) | 2015-03-05 | 2016-02-29 | Polishing composition containing ceria particles and method of use |
| PCT/US2016/020809 WO2016141260A1 (en) | 2015-03-05 | 2016-03-04 | Polishing composition containing ceria particles and method of use |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018513552A JP2018513552A (ja) | 2018-05-24 |
| JP2018513552A5 true JP2018513552A5 (cg-RX-API-DMAC7.html) | 2019-03-28 |
| JP6760955B2 JP6760955B2 (ja) | 2020-09-23 |
Family
ID=56848800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017546641A Active JP6760955B2 (ja) | 2015-03-05 | 2016-03-04 | セリア粒子を含有する研磨組成物及び使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10414947B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3265526B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6760955B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102605260B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN107429121B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI580768B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2016141260A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102463863B1 (ko) * | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| KR101823083B1 (ko) * | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물 |
| IL271182B2 (en) | 2017-06-15 | 2023-03-01 | Rhodia Operations | Cerium-based particles |
| CN109986458B (zh) * | 2017-12-29 | 2021-02-05 | 长鑫存储技术有限公司 | 缓研磨去除多晶硅表面凸块缺陷的方法及半导体工艺方法 |
| US20210115302A1 (en) | 2019-10-22 | 2021-04-22 | Cmc Materials, Inc. | Composition and method for selective oxide cmp |
| CN120365853A (zh) * | 2019-10-22 | 2025-07-25 | Cmc材料有限责任公司 | 自停止性的抛光组合物及方法 |
| EP4048750A4 (en) | 2019-10-22 | 2024-01-03 | CMC Materials, Inc. | COMPOSITION AND METHOD FOR CMP OF SILICON OXIDE AND CARBON-DOPED SILICON OXIDE |
| IL292956A (en) | 2019-11-26 | 2022-07-01 | Rhodia Operations | Liquid and powder dispersion of cerium-based core-shell particles, process for their production and use in polishing |
| KR102373924B1 (ko) * | 2020-10-26 | 2022-03-15 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
| CN112680115A (zh) * | 2021-01-04 | 2021-04-20 | 上海晖研材料科技有限公司 | 一种氧化铈颗粒在抛光工艺中的应用 |
| CN112723405A (zh) * | 2021-01-04 | 2021-04-30 | 上海晖研材料科技有限公司 | 一种氧化铈颗粒及含其的抛光浆料 |
| CN112758974A (zh) * | 2021-01-04 | 2021-05-07 | 上海晖研材料科技有限公司 | 一种氧化铈颗粒的制备方法 |
| WO2022243280A1 (en) | 2021-05-17 | 2022-11-24 | Rhodia Operations | Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing |
| KR102765948B1 (ko) * | 2021-05-20 | 2025-02-11 | 주식회사 한국나노오트 | 연마용 세리아 입자 및 이를 포함하는 슬러리 |
| JP2025520327A (ja) * | 2022-06-17 | 2025-07-03 | ローディア オペレーションズ | 酸化セリウム粒子の懸濁液 |
| CN115960540A (zh) * | 2022-12-23 | 2023-04-14 | 昂士特科技(深圳)有限公司 | 具有改进颗粒的化学机械抛光组合物 |
| WO2025132262A1 (en) | 2023-12-21 | 2025-06-26 | Rhodia Operations | Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing |
| WO2025190482A1 (en) | 2024-03-13 | 2025-09-18 | Rhodia Operations | Cerium oxide particles with cotrolled microstructure |
| CN119736068B (zh) * | 2025-02-05 | 2025-08-08 | 珠海基石科技有限公司 | 一种粒子及其分散液、平整化组合物及其应用、半导体器件及其用基底的平整化方法 |
Family Cites Families (34)
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|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US6454821B1 (en) * | 2000-06-21 | 2002-09-24 | Praxair S. T. Technology, Inc. | Polishing composition and method |
| WO2002067309A1 (en) | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
| JP4231632B2 (ja) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| JP2007531631A (ja) * | 2003-07-11 | 2007-11-08 | ダブリュー・アール・グレイス・アンド・カンパニー−コネチカット | 化学機械的研磨用研磨剤粒子 |
| JP2005138197A (ja) * | 2003-11-04 | 2005-06-02 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| CN1667026B (zh) | 2004-03-12 | 2011-11-30 | K.C.科技股份有限公司 | 抛光浆料及其制备方法和基板的抛光方法 |
| JP2006100538A (ja) | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| TWI673355B (zh) | 2008-04-23 | 2019-10-01 | 日商日立化成工業股份有限公司 | 研磨劑以及使用該研磨劑的基板研磨方法 |
| CN101608097B (zh) * | 2009-07-14 | 2011-12-21 | 上海华明高纳稀土新材料有限公司 | 化学机械抛光用纳米氧化铈浆液及其制备方法 |
| WO2011048889A1 (ja) | 2009-10-22 | 2011-04-28 | 日立化成工業株式会社 | 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法 |
| US9791525B2 (en) | 2011-08-01 | 2017-10-17 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Methods of preparing and operating an MRI multi-channel coil |
| SG10201606827RA (en) | 2012-02-21 | 2016-10-28 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| US8916061B2 (en) * | 2012-03-14 | 2014-12-23 | Cabot Microelectronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| TWI573864B (zh) | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| JP6209845B2 (ja) | 2013-04-11 | 2017-10-11 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
| US10047262B2 (en) * | 2013-06-27 | 2018-08-14 | Konica Minolta, Inc. | Cerium oxide abrasive, method for producing cerium oxide abrasive, and polishing method |
-
2016
- 2016-02-29 US US15/056,198 patent/US10414947B2/en active Active
- 2016-03-04 TW TW105106774A patent/TWI580768B/zh active
- 2016-03-04 CN CN201680013859.3A patent/CN107429121B/zh active Active
- 2016-03-04 EP EP16759549.5A patent/EP3265526B1/en active Active
- 2016-03-04 KR KR1020177027606A patent/KR102605260B1/ko active Active
- 2016-03-04 WO PCT/US2016/020809 patent/WO2016141260A1/en not_active Ceased
- 2016-03-04 JP JP2017546641A patent/JP6760955B2/ja active Active
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